Preparation method and angle adjusting device of TiSiN coating

Abstract

The invention provides a preparation method of a TiSiN coating and an angle adjusting device of the TiSiN coating. The preparation method of the TiSiN coating comprises the steps that a monocrystalline silicon substrate is cleaned and then fixed to an angle adjusting device, the monocrystalline silicon substrate is fixed after the angle of the substrate relative to a target material is set, and the included angle between the surface of the monocrystalline silicon substrate and the surface of the target material ranges from 40 degrees to 60 degrees; the rotating stand is pushed into a cavity of arc ion plating equipment, rough pumping and fine pumping are carried out in sequence to be in a high vacuum state, and a heating power source is started to heat the cavity; argon is introduced into the cavity, and after glow cleaning is carried out on the substrate, an anode ion source is started to etch the surface of the substrate; argon and nitrogen in a certain flow ratio are introduced into the cavity, and after deposition parameters are set, the multi-arc TiSi target is started for deposition. According to the preparation method provided by the invention, the spherical particle defects in the TiSiN coating can be effectively reduced on the premise that the cost is not obviously increased, and the performance of the coating is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of thin film material deposition, and particularly to a preparation method of a TiSiN coating and an angle adjustment device therefor. Background Art

[0002] TiSiN (titanium silicon nitride) coatings have been widely used in cutting tools, dies and high-performance industrial applications due to their excellent mechanical properties, wear resistance and corrosion resistance. This coating combines the excellent characteristics of titanium and silicon and can maintain stable performance under extreme conditions, thus becoming an ideal choice for many high-performance applications. However, during the physical vapor deposition (PVD) process, spherical particles often appear on the coating surface, which significantly affects the overall performance of the coating. The formation of spherical particles is mainly due to the splashing of some molten materials in the arc pit under the action of a strong electric field during the arc discharge process. During the movement of the particles to the substrate, they are affected by various factors such as gas flow, temperature, pressure and deposition rate. The presence of spherical particles not only increases the surface roughness of the coating, but also significantly reduces its density, thereby affecting the mechanical properties, corrosion resistance and friction properties of the coating. Specifically, the increase in spherical particles will cause the coating to be more prone to stress concentration when stressed, reducing its wear resistance and impact resistance. In addition, tiny pores may form between the particles, increasing the permeability of the coating to corrosive media, thereby reducing its corrosion resistance.

[0003] In the preparation process of TiSiN coatings, the existing technologies have the following main disadvantages, which limit the performance improvement and wide application of the coatings: 1. Poor adaptability: Many existing optimization methods are aimed at specific deposition conditions or material combinations and are difficult to be widely applicable in different application scenarios. The improvement measures for specific environments or processes often cannot be extended to other occasions, resulting in limited applicability; 2. High cost: Existing technologies often require the modification or replacement of equipment to achieve better deposition conditions, which increases the cost; 3. Particle defects still exist: Although some methods can improve the deposition process, it is still difficult to fundamentally solve the problem of spherical particle defects. This results in limited improvement in the mechanical properties, wear resistance and corrosion resistance of the coating and cannot meet the requirements of high-performance applications; 4. Complex process parameters: Existing technologies usually require the simultaneous adjustment of multiple deposition parameters (such as gas flow rate, temperature, etc.), with complex operations, which are prone to fluctuations and instability during the production process, affecting the coating quality. Summary of the Invention

[0004] The main object of the present invention is to provide a method for preparing a TiSiN coating and an angle adjusting device thereof, aiming to effectively reduce the spherical particle defects in the TiSiN coating and improve the coating performance without significantly increasing the cost.

[0005] To achieve the above object, the present invention provides a method for preparing a TiSiN coating, comprising the following steps: Clean a single-crystalline silicon substrate, fix the cleaned single-crystalline silicon substrate on the angle adjusting device, and fix the single-crystalline silicon substrate after setting the angle of the substrate relative to the target. Wherein, the included angle between the surface of the single-crystalline silicon substrate and the surface of the target is 40 degrees to 60 degrees; Push the turntable into the cavity of the arc ion plating equipment, perform rough pumping and fine pumping in sequence to pump to a high vacuum state, and start the heating power supply to heat the cavity; Introduce argon gas into the cavity, and perform glow cleaning on the substrate. After glow cleaning for a period of time, turn on the anode ion source to etch the surface of the substrate; Introduce argon gas and nitrogen gas with a certain flow ratio into the cavity. After setting the deposition parameters, turn on the multi-arc TiSi target to obtain a single-layer TiSiN coating.

[0006] Preferably, when cleaning the single-crystalline silicon substrate, put the polished silicon wafer into anhydrous ethanol and acetone and clean it with ultrasonic waves for 20 minutes to 30 minutes to remove surface dust and oil; after cleaning, blow it dry with argon gas to ensure that the surface is clean and pollution-free.

[0007] Preferably, the step of pushing the turntable into the cavity and performing rough pumping and fine pumping in sequence to pump to a high vacuum state specifically includes: Push the turntable into the cavity of the arc ion plating equipment, start the mechanical pump, rough pumping valve and Roots pump for rough pumping; After rough pumping is completed, turn on the molecular pump and high valve for fine pumping, pump to a high vacuum state, and the vacuum indication reaches 2.5×10 -2 Pa or less.

[0008] Preferably, when starting the heating power supply to heat the cavity, the temperature is set at 250°C - 350°C.

[0009] Preferably, the step of introducing argon gas into the cavity, performing glow cleaning on the substrate, and after glow cleaning for a period of time, turning on the anode ion source to etch the surface of the substrate specifically includes: Introduce argon gas with a flow rate of 100 sccm to 300 sccm into the cavity, turn on the substrate bias voltage to perform glow cleaning on the substrate, keep the vacuum degree at 0.5 Pa to 1.5 Pa, and clean the substrate for 15 min to 30 min with the substrate negative bias voltage magnitude of 600 - 1000 V; Turn on the anode ion source to etch the surface of the substrate.

[0010] Preferably, the time for turning on the anode ion source to etch the substrate is 30 min to 60 min.

[0011] Preferably, the step of introducing argon and nitrogen at a certain flow ratio into the chamber, setting deposition parameters, and then starting the multi-arc TiSi target to obtain a single-layer TiSiN coating specifically includes: Introduce 50 sccm~100 sccm of argon gas and 150 sccm~250 sccm of nitrogen gas to keep the gas pressure at 1 Pa ~1.2 Pa, set the bias duty cycle, and set the voltage to 50 V ~150 V; The multi-arc TiSi target was turned on, the TiSi target current was controlled to be maintained at 100A~150A, and deposition was performed in a mixed atmosphere of nitrogen and argon at 0.8Pa~1.2Pa to obtain a single-layer TiSiN coating.

[0012] The present invention also proposes an angle adjustment device based on the above-mentioned TiSiN coating preparation method, comprising a substrate clamping device and a supporting base of a supporting device, wherein: The substrate clamping device includes a substrate backrest device for supporting a substrate, a substrate clamper detachably fixed above the substrate backrest device to fix the substrate, and an angle adjustment device located below the substrate backrest device, wherein the bottom of the angle adjustment device is connected to the support base to adjust the angle of the substrate relative to the target material.

[0013] Preferably, the angle adjustment device includes a support base plate, and a support arm located below the base backrest device and hinged thereto, wherein the bottom end of the base backrest device is hinged to the support base plate, and the support base plate is provided with a plurality of grooves for accommodating the bottom of the support arm, and the support angle of the base backrest device can be adjusted by the support arm being accommodated in different grooves.

[0014] Preferably, the base clamp and the base backrest device are connected by snap-fitting, and the support base includes a connecting column supported at the bottom of the support base plate and a clamping assembly fixed to one end of the connecting column away from the support base plate, and the clamping assembly is used to clamp on the column of the workpiece rack.

[0015] The preparation method of the TiSiN coating proposed by the present invention has the following beneficial effects: 1. Reduce production costs: This method does not require major modifications to existing equipment, reducing implementation costs; 2. Effectively reduce spherical particle defects: By optimizing the incident angle of the particles, the deposited particles can be diffused more effectively on the substrate surface, reducing the generation of spherical particles, thereby improving the density and overall performance of the coating; 3. Simplify process parameter control: By adjusting a single parameter (the relative angle between the substrate and the target), the present invention reduces the adjustment requirements for other process parameters, making the production process more stable and facilitating operation and control. Description of the Drawings

[0016] Figure 1 It is a schematic flow chart of the preparation method of the TiSiN coating of the present invention; Figure 2 It is the surface SEM morphology of the TiSiN coating prepared in Example 1 of the preparation method of the TiSiN coating of the invention; Figure 3 It is the surface SEM morphology of the TiSiN coating prepared in Example 2 of the preparation method of the TiSiN coating of the invention; Figure 4 It is the surface SEM morphology of the TiSiN coating prepared in Example 3 of the preparation method of the TiSiN coating of the invention; Figure 5 It is the surface SEM morphology of the TiSiN coating prepared in Comparative Example 1; Figure 6 It is a three-dimensional structure schematic diagram of the angle adjustment device of the preparation method of the TiSiN coating of the present invention; Figure 7 It is an exploded structure schematic diagram of the angle adjustment device of the preparation method of the TiSiN coating of the present invention; Figure 8 It is a schematic diagram of the working principle of the angle adjustment device of the preparation method of the TiSiN coating of the present invention for adjusting the angle of the substrate relative to the target.

[0017] In the figure, 1 - clamping assembly, 2 - connecting column, 3 - substrate holder, 4 - substrate backrest device, 5 - support arm, 6 - support base plate, 7 - target, 8 - spherical particles, 9 - substrate.

[0018] The realization, functional features and advantages of the object of the present invention will be further described with reference to the embodiments and the accompanying drawings. Detailed Embodiments

[0019] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0020] The present invention provides a preparation method of a TiSiN coating.

[0021] A preparation method of a TiSiN coating includes the following steps: Refer to Figure 1, Step S10: Clean the single-crystalline silicon substrate, fix the cleaned single-crystalline silicon substrate on the angle adjustment device, and fix the single-crystalline silicon substrate after setting the angle of the substrate relative to the target. Here, the angle between the surface of the single-crystalline silicon substrate and the surface of the target is 40 degrees to 60 degrees; Step S20: Push the turntable into the chamber of the arc ion plating equipment, perform rough pumping and fine pumping in sequence to pump to a high vacuum state, and start the heating power supply to heat the chamber; Step S30: Introduce argon into the chamber, and perform glow cleaning on the substrate. After glow cleaning for a period of time, turn on the anode ion source to etch the surface of the substrate; Step S40: Introduce argon and nitrogen into the chamber at a certain flow ratio. After setting the deposition parameters, turn on the multi-arc TiSi target to obtain a single-layer TiSiN coating.

[0022] In Step S10, when cleaning the single-crystalline silicon substrate, put the polished silicon wafer into anhydrous ethanol and acetone and ultrasonically clean it for 20 minutes to 30 minutes to remove surface dust and oil; after cleaning, dry it with argon to ensure the surface is clean and pollution-free.

[0023] Step S20 specifically includes: Step S201: Push the turntable into the chamber of the arc ion plating equipment, and start the mechanical pump, rough pumping valve and Roots pump for rough pumping; Step S202: After rough pumping is completed, turn on the molecular pump and high valve for fine pumping, pump to a high vacuum state, and the vacuum indication reaches 2.5×10 -2 Pa or less (the vacuum at this time is the base vacuum).

[0024] During rough pumping, first start the mechanical pump and the rough pumping valve. When the air pressure drops to 700 Pa, turn on the Roots pump to further pump the vacuum. After the system temperature stabilizes, then turn on the molecular pump and the high valve for fine pumping.

[0025] In Step S20, when starting the heating power supply to heat the chamber, the temperature is set at 250°C - 350°C.

[0026] Step S30 specifically includes: Step S301: Introduce argon into the chamber at a flow rate of 100 sccm to 300 sccm, turn on the substrate bias voltage to perform glow cleaning on the substrate, keep the vacuum degree at 0.5 Pa to 1.5 Pa, and clean the substrate for 15 min to 30 min with the substrate negative bias voltage magnitude of 600 - 1000 V; Step S302: Turn on the anode ion source to etch the surface of the substrate.

[0027] Specifically, the time for turning on the anode ion source to etch the substrate is 30 min to 60 min.

[0028] Glow cleaning and etching the substrate surface by turning on the anode ion source can help to further clean the substrate surface and improve the adhesion of subsequent deposition.

[0029] Specifically, step S40 includes: Step S401, introducing 50 sccm to 100 sccm of argon gas and 150 sccm to 250 sccm of nitrogen gas to keep the gas pressure at 1 Pa to 1.2 Pa, setting the bias duty cycle, and setting the voltage to 50 V to 150 V; Step S402, turning on the multi-arc TiSi target, controlling the TiSi target current to maintain at 100A-150A, and performing deposition in a nitrogen and argon mixed atmosphere of 0.8Pa-1.2Pa to obtain a single-layer TiSiN coating.

[0030] The preparation method of the TiSiN coating is specifically described below with three examples and one comparative example.

[0031] Example 1 The polished silicon wafer was used as the substrate, and it was placed in anhydrous ethanol and acetone for ultrasonic cleaning. The cleaned Si substrate was fixed on the angle adjustment device. The substrate was fixed on the rotating rack, and the rotating rack was pushed into the cavity. The mechanical pump and the rough pumping valve were turned on to roughly pump the vacuum to below 8.0Pa. After the rough pumping was completed, the molecular pump and the high valve were turned on for fine pumping. When the vacuum degree reached 5×10 -2 Pa, turn on the heating and continue to evacuate until the background vacuum is 2.5×10 -2 Pa. Introduce argon gas and turn on the negative bias voltage of the substrate to perform glow cleaning on the substrate, turn on the anode ion source and the negative bias voltage of the substrate to perform ion beam cleaning on the substrate. Subsequently, introduce 80sccm of argon gas and 180sccm of nitrogen gas to keep the gas pressure at 1.2Pa. Turn on the multi-arc TiSi target, control the TiSi target current to be maintained at 110A, the bias duty cycle to be maintained at 80:9, and the voltage to be set to 100V. In this example, the angle of the substrate relative to the target material is adjusted to 20°, and other parameters remain unchanged; the above process parameters are used for deposition for 40 minutes to obtain a single-layer TiSiN coating, such as Figure 2 shown.

[0032] Example 2 The polished silicon wafer was used as the substrate, and it was placed in anhydrous ethanol and acetone for ultrasonic cleaning. The cleaned Si substrate was fixed on the angle adjustment device. The substrate was fixed on the rotating rack, and the rotating rack was pushed into the cavity. The mechanical pump and the rough pumping valve were turned on to roughly pump the vacuum to below 8.0Pa. After the rough pumping was completed, the molecular pump and the high valve were turned on for fine pumping. When the vacuum degree reached 5×10 -2 Pa, turn on the heating and continue to evacuate until the background vacuum is 2.5×10 -2Pa. Argon is introduced and the substrate negative bias voltage is turned on to perform glow cleaning on the substrate. The anode ion source and the substrate negative bias voltage are turned on to perform ion beam cleaning on the substrate. Subsequently, 80 sccm of argon and 180 sccm of nitrogen are introduced to keep the gas pressure at 1.2 Pa. The multi-arc TiSi target is turned on, and the TiSi target current is controlled to remain at 110 A, the bias duty ratio is kept at 80:9, and the voltage magnitude is set to 100 V. In this example, by adjusting the angle of the substrate relative to the target to 40°, with other parameters unchanged; depositing for 40 min using the above process parameters to obtain a single-layer TiSiN coating, as Figure 3 shown.

[0033] Example 3 Using a polished silicon wafer as the substrate, it is placed in anhydrous ethanol and acetone and ultrasonically cleaned, and the cleaned Si substrate is fixed on the angle adjustment device. The substrate is fixed on the turntable and the turntable is pushed into the cavity. The mechanical pump and the roughing valve are turned on to rough pump the vacuum to below 8.0 Pa; after rough pumping is completed, the molecular pump and the high valve are turned on for fine pumping; when the vacuum degree reaches below 5×10 -2 Pa, heating is turned on and the vacuum is continuously pumped to the base vacuum of 2.5×10 -2 Pa. Argon is introduced and the substrate negative bias voltage is turned on to perform glow cleaning on the substrate. The anode ion source and the substrate negative bias voltage are turned on to perform ion beam cleaning on the substrate. Subsequently, 80 sccm of argon and 180 sccm of nitrogen are introduced to keep the gas pressure at 1.2 Pa. The multi-arc TiSi target is turned on, and the TiSi target current is controlled to remain at 110 A, the bias duty ratio is kept at 80:9, and the voltage magnitude is set to 100 V. In this example, by adjusting the angle of the substrate relative to the target to 60°, with other parameters unchanged; depositing for 40 min using the above process parameters to obtain a single-layer TiSiN coating, as Figure 4 shown.

[0034] Comparative Example 1 Using a polished silicon wafer as the substrate, it is placed in anhydrous ethanol and acetone and ultrasonically cleaned, and the cleaned Si substrate is fixed on the angle adjustment device. The substrate is fixed on the turntable and the turntable is pushed into the cavity. The mechanical pump and the roughing valve are turned on to rough pump the vacuum to below 8.0 Pa; after rough pumping is completed, the molecular pump and the high valve are turned on for fine pumping; when the vacuum degree reaches below 5×10 -2 Pa, heating is turned on and the vacuum is continuously pumped to the base vacuum of 2.5×10 -2Pa. Argon is introduced and the substrate negative bias voltage is turned on to perform glow cleaning on the substrate. The anode ion source and the substrate negative bias voltage are turned on to perform ion beam cleaning on the substrate. Subsequently, 80 sccm of argon and 180 sccm of nitrogen are introduced to keep the gas pressure at 1.2 Pa. The multi-arc TiSi target is turned on, and the TiSi target current is controlled to be kept at 110 A, the bias duty ratio is kept at 80:9, and the voltage magnitude is set to 100 V. In this comparative example, the angle of the substrate is not adjusted, and it is placed facing the target according to the method used in ordinary experiments; the above process parameters are used for deposition for 40 min to obtain a single-layer TiSiN coating, as Figure 5 shown.

[0035] Adjusting the angle between the substrate and the target directly affects the incident angle of the deposited particles. When the substrate angle increases, the incident angle of the deposited particles becomes steeper. A higher incident angle causes a greater change in the direction of the kinetic energy of the spherical particles when they impact the substrate, thereby shortening the residence time of the particles on the substrate surface. This effect reduces the possibility of spherical particles aggregating into larger particles on the surface. At a higher incident angle, the deposited particles tend to rebound along the substrate surface after hitting the substrate rather than adhering directly. Such a rebound effect effectively reduces the number of deposited particles and optimizes the surface quality and densification of the coating.

[0036] Table 1 shows the parameters of Examples 1 to 3 and the parameters of Comparative Example 1

[0037] From the data in Table 1, it can be seen that at an angle of 0°, more spherical particles are formed on the coating surface, and the particle density is as high as 4.3×10 5 particles / mm². This high-density particles lead to an increase in the surface roughness of the coating and a decrease in the hardness to 24.54 GPa. When the angle is set to 20°, the density of the spherical particles is significantly reduced to 9.8×10 4 particles / mm², the uniformity and densification of the coating are improved, and the hardness is correspondingly increased to 27.96 GPa, showing a preliminary optimization effect. Further increasing the angle to 40°, the number of spherical particles is significantly reduced to 8.6×10 4 particles / mm², the densification of the coating is greatly improved, and the hardness is also significantly increased to 33.12 GPa. The coating performance at this angle is greatly optimized, effectively reducing surface defects. When the angle is increased to 60°, the spherical particle density drops to the lowest, only 2.1×10 4The density is 0 / mm², but the hardness slightly decreases to 31.08 GPa. It can be seen that within a certain range, by adjusting the relative angle between the substrate and the target, the density of spherical particles in the TiSiN coating prepared by PVD can be significantly reduced, thereby improving the densification and hardness of the film and optimizing the overall performance and quality of the coating. When the angle exceeds a certain range, the density of spherical particles will decrease and the hardness will also decrease. Therefore, the selection of the angle range is particularly important. In this application, the optimal angle range is 40° to 60°.

[0038] The preparation method of the TiSiN coating proposed by the present invention has the following beneficial effects: 1. Reduce production costs: This method does not require significant modification of existing equipment, reducing the implementation cost.

[0039] 2. Effectively reduce spherical particle defects: By optimizing the incident angle of the particles, the deposited particles can diffuse more effectively on the substrate surface, reducing the generation of spherical particles, thereby improving the densification and overall performance of the coating; 3. Simplify process parameter control: In the present invention, by adjusting a single parameter (the relative angle between the substrate and the target), the adjustment requirements for other process parameters are reduced, making the production process more stable and facilitating operation and control; In summary, by solving the defects of the prior art, the present invention provides a reliable technical solution for the high-performance application of the TiSiN coating.

[0040] The present invention further proposes an angle adjustment device for the preparation method of the TiSiN coating.

[0041] Referring to Figures 6 to 8 , in this preferred embodiment, an angle adjustment device based on the above-mentioned preparation method of the TiSiN coating includes a substrate clamping device and a support base of the support device. Among them, The substrate clamping device includes a substrate backrest device 4 for supporting the substrate, a substrate clamp 3 detachably fixed above the substrate backrest device 4 to fix the substrate, and an angle adjustment device located below the substrate backrest device 4. The bottom of the angle adjustment device is connected to the support base to adjust the angle of the substrate relative to the target.

[0042] Specifically, the angle adjustment device includes a support base plate 6 and a support arm 5 located below and hinged to the base backrest device 4. Among them, the bottom end of the base backrest device 4 is hinged to the support base plate 6. A plurality of grooves for accommodating the bottom of the support arm 5 are provided on the support base plate 6. By accommodating the support arm 5 in different grooves, the support angle of the base backrest device 4 can be adjusted. The base gripper 3 and the base backrest device 4 are connected by a snap connection. The support base includes a connection column 2 supported at the bottom of the support base plate 6 and a clamping assembly 1 fixed to the end of the connection column 2 away from the support base plate 6. The clamping assembly 1 is used for clamping on the column of the workpiece holder.

[0043] The angle adjustment device proposed by the present invention has a simple structure. The method for adjusting the base angle is simple, reliable, easy to implement and has a low cost. This angle adjustment device provides a simple and feasible solution, which can effectively inhibit the formation of spherical particles in a variety of deposition environments, increasing the versatility and application range of the method.

[0044] The above are only the preferred embodiments of the present invention, and do not limit the patent scope of the present invention accordingly. Any equivalent structural transformation made by using the content of the specification and drawings of the present invention, or directly or indirectly applied in other related technical fields, shall be equally included in the patent protection scope of the present invention.

Claims

1. A method for preparing a TiSiN coating, characterized in that: The following steps are involved: Cleaning the single crystal silicon substrate, and fixing the cleaned single crystal silicon substrate on the angle adjustment device, and fixing the single crystal silicon substrate after setting the angle of the substrate relative to the target material, wherein the angle between the single crystal silicon substrate surface and the target material surface is 40 degrees to 60 degrees; Push the rotating rack into the cavity of the arc ion plating equipment, perform rough pumping and fine pumping in sequence to pump to a high vacuum state, and start the heating power supply to heat the cavity; Argon gas is introduced into the chamber, and the substrate is glow cleaned. After glow cleaning for a period of time, the anode ion source is turned on to etch the surface of the substrate; Argon and nitrogen with a certain flow ratio are introduced into the chamber, and after the deposition parameters are set, the multi-arc TiSi target is turned on to obtain a single-layer TiSiN coating.

2. The method for preparing the TiSiN coating according to claim 1, characterized in that: When cleaning the single crystal silicon substrate, the polished silicon wafer is placed in anhydrous ethanol and acetone and cleaned with ultrasonic waves for 20 minutes to 30 minutes to remove surface dust and oil stains; after cleaning, it is blown dry with argon gas to ensure that the surface is clean and free of pollution.

3. The method for preparing the TiSiN coating according to claim 1, characterized in that: The step of pushing the rotating rack into the cavity and sequentially performing rough pumping and fine pumping to a high vacuum state specifically includes: Push the rotating rack into the cavity of the arc ion plating equipment, start the mechanical pump, rough pumping valve and Roots pump for rough pumping; After the rough pumping is completed, open the molecular pump and high pressure valve for fine pumping. Fine pumping to high vacuum state, the vacuum reading reaches 2.5×10 -2 Below Pa.

4. The method for preparing the TiSiN coating according to claim 1, characterized in that: When the heating power supply is started to heat the cavity, the temperature is set at 250°C-350°C.

5. The method for preparing the TiSiN coating according to claim 1, characterized in that: The step of introducing argon gas into the chamber and performing glow cleaning on the substrate, and after glow cleaning for a period of time, starting the anode ion source to etch the surface of the substrate specifically includes: Introduce argon gas at a flow rate of 100 sccm~300 sccm into the chamber, turn on the substrate bias to perform glow cleaning on the substrate, maintain the vacuum degree at 0.5Pa~1.5Pa, and clean the substrate for 15min~30min with a substrate negative bias of 600~1000V; The anode ion source is turned on to perform surface etching on the substrate.

6. The method for preparing the TiSiN coating according to claim 5, characterized in that: The time for starting the anode ion source to etch the substrate is 30 minutes to 60 minutes.

7. The method for preparing a TiSiN coating according to any one of claims 1 to 6, characterized in that: The step of introducing argon and nitrogen at a certain flow ratio into the chamber, setting deposition parameters, and then starting the multi-arc TiSi target to obtain a single-layer TiSiN coating specifically includes: Introduce 50 sccm~100 sccm of argon gas and 150 sccm~250 sccm of nitrogen gas to keep the gas pressure at 1 Pa ~1.2 Pa, set the bias duty cycle, and set the voltage to 50 V ~150 V; The multi-arc TiSi target was turned on, the TiSi target current was controlled to be maintained at 100A~150A, and deposition was performed in a mixed atmosphere of nitrogen and argon at 0.8Pa~1.2Pa to obtain a single-layer TiSiN coating.

8. An angle adjustment device based on the preparation method of the TiSiN coating according to any one of claims 1 to 7, characterized in that: The invention comprises a substrate clamping device and a supporting base of a supporting device, wherein: The substrate clamping device includes a substrate backrest device for supporting a substrate, a substrate clamper detachably fixed above the substrate backrest device to fix the substrate, and an angle adjustment device located below the substrate backrest device, wherein the bottom of the angle adjustment device is connected to the support base to adjust the angle of the substrate relative to the target material.

9. The angle adjustment device according to claim 8, characterized in that: The angle adjustment device includes a support base plate and a support arm located below the base backrest device and hinged thereto, wherein the bottom end of the base backrest device is hinged to the support base plate, and a plurality of grooves for accommodating the bottom of the support arm are provided on the support base plate, and the support angle of the base backrest device can be adjusted by accommodating the support arm in different grooves.

10. The angle adjustment device according to claim 9, characterized in that: The base clamp and the base backrest device are connected by snap fastening, and the support base includes a connecting column supported at the bottom of the support base plate and a clamping assembly fixed to one end of the connecting column away from the support base plate, and the clamping assembly is used to clamp on the column of the workpiece rack.

Images