Method for manufacturing double-sided heat dissipation structure of high-power chip

Abstract

The invention discloses a manufacturing method of a high-power chip double-sided heat dissipation structure, and belongs to the field of chip cooling devices. Firstly, polyimide / fiber insulation cloth is prepared, and then the insulation cloth is compounded with a heat conduction bonding layer to obtain an insulation layer. Secondly, after insulating layers are attached to the two sides of a temperature equalizing film, a heat-conducting double-faced adhesive tape is compounded on the single side to obtain an upper temperature equalizing layer of the chip, after the insulating layers are attached to the single side of the temperature equalizing film, the heat-conducting double-faced adhesive tape is compounded on the two sides to obtain a lower temperature equalizing layer of the chip, the lower temperature equalizing layer of the chip is attached to a heat dissipation plate, and then the chip is installed on the heat dissipation plate and fastened through a mechanical structure; and finally, mounting the chip upper temperature equalization layer on the upper surface of the chip, and bending along the edge of the chip to be attached to the chip lower temperature equalization layer to obtain the double-sided heat dissipation structure. The method provided by the invention can be used for preparing the double-sided heat dissipation structure of the high-power chip, and has the advantages of high heat dissipation efficiency, good insulating property, high reliability and the like.

Description

Technical Field

[0001] The present invention belongs to a chip cooling device and relates to a manufacturing method of a heat dissipation structure for high-power chips. Background Art

[0002] With the rapid development of modern technology, power semiconductor devices have been widely used in many fields, especially playing a core role in high-power application scenarios such as new energy vehicle charging piles, power electronic conversion devices, and industrial motor drives. With social development, the heat dissipation power of power semiconductor devices in these scenarios is increasing, and the heat dissipation problem has become an important factor restricting the efficient and stable operation of the devices.

[0003] Currently, most traditional power semiconductor device heat dissipation technologies adopt a single-sided heat dissipation method. In this heat dissipation mode, heat is mainly dissipated outward through a single heat dissipation path at the bottom of the device. For example, in a common packaging structure, the chip is fixed on the substrate, heat is conducted from the chip to the substrate, and then transferred to the heat sink through the contact interface between the substrate and the heat sink, and finally heat dissipation is achieved through the heat exchange between the heat sink and the surrounding environment (such as air convection, liquid cooling, etc.). However, this single-sided heat dissipation structure has many limitations. On the one hand, with the continuous increase in the power density of power semiconductor devices, the heat generated per unit area increases sharply, and the heat transfer efficiency of single-sided heat dissipation is difficult to meet the requirements of rapid and efficient heat dissipation. Under high-load operating conditions, heat is easily accumulated inside the chip, resulting in too high chip temperature, which in turn affects the electrical performance, reliability, and service life of the device. Excessive temperature will cause the carrier mobility of semiconductor materials to decrease, leakage current to increase, and even cause faults such as thermal breakdown, seriously restricting the application range and performance of the device.

[0004] The heat dissipation structure prepared by the method of the present invention has multiple heat conduction paths, has the characteristics of both longitudinal heat transfer and transverse temperature uniformity, and also has the characteristics of double-sided heat dissipation, and has the dual functions of insulation and heat conduction, and can be applied to various heat dissipation scenarios such as air cooling and liquid cooling. Summary of the Invention

[0005] The technical problem to be solved by the present invention is to overcome the deficiencies of the prior art, adopt a double-sided heat dissipation structure, and achieve multi-path efficient heat dissipation of the chip.

[0006] The present invention provides a manufacturing method of a double-sided heat dissipation structure for high-power chips, and its manufacturing steps are as follows: 1. A manufacturing method of a double-sided heat dissipation structure power module, and the power module with the double-sided heat dissipation structure prepared is characterized in that its manufacturing steps include: S01, preparation of insulating cloth: impregnate a fiber cloth with a polyamic acid prepolymer solution with a certain solid content and dry it, and repeat the above impregnation and drying steps multiple times, and then perform imidization treatment to obtain insulating cloth; S02, Composite of Insulating Cloth and Thermal Conductive Adhesive Layer: Coat a layer of thermal conductive adhesive layer on the insulating cloth prepared in S01 to obtain an insulating layer with a thermal conductive adhesive layer; S03, Lamination of Insulating Layer and Heat Spreading Film: Laminate the insulating layer prepared in S02 with the heat spreading film. When laminating, the side with the thermal conductive adhesive layer faces the heat spreading film. The lamination process is roll-to-roll hot pressing to obtain a heat spreading layer with a single-layer insulating layer; S04, Lamination of Insulating Layer and Heat Spreading Layer: Laminate the heat spreading layer with a single-layer insulating layer prepared in S03 with the insulating layer with a thermal conductive adhesive layer prepared in S02. When laminating, the side with the thermal conductive adhesive layer faces the heat spreading film. The lamination process is roll-to-roll hot pressing to obtain a heat spreading layer with a double-layer insulating layer; S05, Preparation of Thermal Conductive Double-Sided Adhesive: Add thermal conductive fillers and additives into the adhesive and stir to disperse evenly to form a thermal conductive composite material. Then coat the thermal conductive composite material on the release film to form a thermal conductive double-sided adhesive; S06, Composite the First Thermal Conductive Double-Sided Adhesive: On one side of the insulating layer of the structure prepared in step S03, laminate a layer of the thermal conductive double-sided adhesive prepared in S04 to form a heat spreading layer with a layer of thermal conductive double-sided adhesive and a layer of insulating layer; S07, Composite the Second Thermal Conductive Double-Sided Adhesive: On the other side of the structure obtained in S06, laminate a layer of the thermal conductive double-sided adhesive prepared in S05 to form a heat spreading layer with two layers of thermal conductive double-sided adhesive and a layer of insulating layer, which is called the heat spreading layer under the chip; S08, Composite Thermal Conductive Double-Sided Adhesive: On one side of the structure prepared in step S04, laminate a layer of the thermal conductive double-sided adhesive prepared in S05 to form a heat spreading layer with a layer of thermal conductive double-sided adhesive and two layers of insulating layer, which is called the heat spreading layer on the chip; S09, Mount the Heat Spreading Layer under the Chip: Cut the heat spreading layer under the chip prepared in S07 into a certain shape, which is the same as the surface shape of the heat sink on the side where the chip is installed. After peeling off the release film on one side, laminate it with the heat sink, and then peel off the release film on the other side; S10, Install the Chip: Laminate a single or multiple chips on the heat sink and fasten the chips with fastening screws; S11, Mount the Heat Spreading Layer on the Chip: Cut the heat spreading layer on the chip prepared in step S08 into a certain shape, ensuring that the area of the heat spreading layer on the chip is more than twice the area of the upper surface of the chip. After peeling off the release film, mount it on the upper surface of the chip, bend it along the edge of the chip, and then laminate it with the heat spreading layer under the chip to form a double-sided heat dissipation structure.

[0007] 2. Further, it is characterized in that the solid content of the polyamic acid prepolymer solution in the S01 step is 20-40 wt.%, the fiber cloth in the S01 step contains one or more of ceramic fibers or glass fibers, the thickness of the fiber cloth is 20-250 microns, the imidization in the S01 step refers to thermal imidization or chemical imidization, and the insulation strength of the obtained insulating cloth is greater than 100 kV / mm, and the longitudinal thermal conductivity is greater than 0.8 W / (m·K).

[0008] 3. Further, it is characterized in that the heat-conducting adhesive layer in the S02 step is composed of a resin matrix and heat-conducting fillers. The resin matrix is one or more of epoxy resin, ethylene-vinyl acetate copolymer, nitrile rubber, chloroprene rubber, silicone pressure-sensitive adhesive, polyester hot-melt adhesive, and thermoplastic polyurethane. The heat-conducting fillers are one or more of silica, alumina, magnesia, zinc oxide, silicon, boron nitride, aluminum nitride, silicon nitride, silicon carbide, diamond, carbon nanotubes, graphene, graphite nanosheets, graphite, and metal particles. The thickness range of the heat-conducting adhesive layer is 1-100 μm.

[0009] 4. Further, it is characterized in that the temperature-equalizing film in the S03 step contains one or more of silicon carbide, diamond, carbon fiber, carbon nanotubes, graphene, graphite nanosheets, and graphite, the transverse thermal conductivity is greater than 300 W / (m·K), and the thickness is 0.01 mm-3 mm.

[0010] 5. Further, it is characterized in that the heat-conducting composite material in the S05 step contains heat-conducting fillers and adhesives. The heat-conducting fillers include one or more of silica, alumina, magnesia, zinc oxide, silicon, boron nitride, aluminum nitride, silicon nitride, silicon carbide, diamond, carbon nanotubes, graphene, graphite nanosheets, graphite, and metal particles, and the particle size is 0.01-200 μm. The adhesives include one or more of acrylic resin, silicone resin, and synthetic rubber. The thermal conductivity of the prepared heat-conducting double-sided tape is greater than 0.5 W / (m·K), the peel strength is greater than 0.2 N / mm, and the thickness is 5-50 microns.

[0011] 6. Further, it is characterized in that the heat dissipation plate in the S09 is one or more of copper alloy, aluminum alloy, copper-based composite material, aluminum-based composite material, graphite, heat-conducting plastic, alumina ceramic, aluminum nitride ceramic, silicon nitride ceramic, zirconia ceramic, and boron nitride ceramic. Its thermal conductivity is greater than 5 W / (m·K), and the heat dissipation plate is a finned radiator or a liquid-cooling plate with internal flow channels.

[0012] 7. Further, it is characterized in that the chip in the step S10 includes one or more of an insulated gate bipolar transistor, a triode, a diode, and a field effect transistor. The substrate material of the chip is one or more of silicon, silicon carbide, gallium nitride, and gallium arsenide. The chip has a heat dissipation power greater than 5W and a side length of 0.5 - 100mm.

[0013] 8. A high-power chip heat dissipation structure and a manufacturing method thereof, characterized in that the heat dissipation structure is prepared by the method of any one of the above, and has a double-sided heat dissipation function.

[0014] Compared with the prior art, the advantages of the present invention are as follows: (1) The present invention provides a manufacturing method for a double-sided heat dissipation structure of a high-power chip, which can achieve efficient heat dissipation of various high-power chips, reduce the chip junction temperature, and improve the reliability of the system; (2) The heat dissipation structure prepared by the manufacturing method provided by the present invention has the characteristics of longitudinal heat transfer and transverse temperature uniformity, and also has the characteristic of double-sided heat dissipation, and the heat dissipation effect is better; (3) The heat dissipation structure prepared by the manufacturing method provided by the present invention has the characteristics of insulating heat conduction. Using a heat-conducting polyimide fiber cloth as the insulating layer, it has the dual functions of insulation and heat conduction; (4) The heat dissipation structure prepared by the manufacturing method provided by the present invention is applicable to various heat dissipation scenarios such as air cooling and liquid cooling; (5) The manufacturing method provided by the present invention has the advantages of simple operation, simple process, and convenient application. Description of the Drawings

[0015] Attached Figure 1 Shown is the process flow chart of the present invention.

[0016] Attached Figure 2 Shown is the structural schematic diagram of the present invention.

[0017] Attached Figure 3 Shown is the schematic diagram of the heat dissipation path of the chip, and the arrows in the figure indicate the heat flow direction.

[0018] Attached Figure 4 Shown is the line graph of the chip junction temperature changing with time. Detailed Embodiments

[0019] The specific embodiments of the present invention will be described in detail below. It should be noted that the embodiments described here are only for illustrative purposes and are not used to limit the present invention. In the following description, in order to provide a thorough understanding of the present invention, a large number of specific details are set forth. However, it is obvious to those of ordinary skill in the art that the present invention does not have to be implemented with these specific details. In other instances, well-known structures, circuits, materials, or methods have not been specifically described to avoid obscuring the present invention.

[0020] Throughout the specification, references to "one embodiment", "an embodiment", "one example" or "an example" mean that the particular features, structures, or characteristics described in connection with that embodiment or example are included in at least one embodiment of the present invention. Thus, the phrases "in one embodiment", "in an embodiment", "one example" or "an example" that appear throughout the specification do not necessarily all refer to the same embodiment or example. Additionally, the particular features, structures, or characteristics may be combined in any suitable combination and / or sub-combination in one or more embodiments or examples. The present invention will be specifically described below with reference to the accompanying drawings.

[0021] In the following description of the technical solution of the present invention in conjunction with the accompanying drawings, the dimensions, ratios, and positional relationships of the various elements in the drawings are only exemplary, and the connection manners of the illustrated elements are also for illustration purposes and are not used to limit the present invention.

[0022] Embodiment

[0023] The described embodiment illustrates the application of the manufacturing method of the present invention in the heat dissipation of MOSFET chips.

[0024] As Figure 2 shown, the MOSFET chip heat dissipation structure of the present invention mainly includes the following parts: a power chip 101, a heat dissipation plate 102, an insulating cloth 103, a thermal conductive adhesive layer 104, a heat dissipation film 105, a thermal conductive double-sided tape 106, fastening screws 107, an under-chip heat dissipation layer 108, and an on-chip heat dissipation layer 109; Figure 1 is the process flow chart of the present invention.

[0025] S01 Preparation of the insulating cloth: An alumina fiber cloth with a thickness of 50 microns is impregnated with a polyamic acid prepolymer solution with a solid content of 35 wt.%, and then placed in a vacuum oven and dried at a vacuum degree of -0.08 MPa and a temperature of 100 °C. The above impregnation and drying steps are repeated three times, and then staged thermal imidization treatment is carried out: The impregnated fiber cloth is placed in an oven and processed in three stages. The first stage sets the temperature at 200 °C and the duration is 90 minutes, the second stage sets the temperature at 300 °C and the duration is 90 minutes, and the third stage sets the temperature at 350 °C and the duration is 30 minutes. Then the fiber cloth is taken out of the oven to obtain an insulating cloth 103 with a longitudinal thermal conductivity of 3.5 W / (m·K); S02 Composite of the insulating cloth and the thermal conductive adhesive layer: A layer of thermal conductive adhesive layer 104 with a thickness of 10 microns is evenly coated on the insulating cloth 103. The resin matrix contained in the thermal conductive adhesive layer 104 is epoxy resin, and the thermal conductive filler is aluminum nitride to obtain an insulating layer; Lamination of the S03 Insulating Layer and the Heat Spreader Film: Take a heat spreader film 105 with a size larger than the area of the heat sink. This heat spreader film is a pyrolytic graphite film with a thickness of 40 microns and a transverse thermal conductivity of 1050 W / (m·K). Use the roll-to-roll hot pressing process to laminate the insulating layer and the heat spreader film 105. When laminating, the side with the thermally conductive adhesive layer 104 faces the heat spreader film 105 to obtain a heat spreader layer with a single-sided insulating layer; Lamination of the Insulating Layer and the Heat Spreader Layer: Use the roll-to-roll hot pressing process to laminate the heat spreader layer with a single-layer insulating layer prepared in S03 and the insulating layer with a thermally conductive adhesive layer prepared in S02. When laminating, the side with the thermally conductive adhesive layer faces the heat spreader film to obtain a heat spreader layer with a double-layer insulating layer; Preparation of the Thermally Conductive Double-Sided Adhesive: Coat a thermally conductive composite material on a release film. The thermally conductive composite material contains thermally conductive fillers and an adhesive. The thermally conductive fillers are graphite nanosheets (with a D50 particle size of 5.2 microns) and aluminum powder (with a D50 particle size of 1.3 microns), and the adhesive is acrylic resin. Control the coating thickness to be 30 microns to obtain a thermally conductive double-sided adhesive with a thermal conductivity of 0.8 W / (m·K) and a peel strength of 2.0 N / mm; Lamination of the First Thermally Conductive Double-Sided Adhesive: On one side of the heat spreader layer of the structure prepared in S03, laminate a thermally conductive double-sided adhesive prepared in S04 to form a heat spreader layer with a layer of thermally conductive double-sided adhesive 106; Lamination of the Second Thermally Conductive Double-Sided Adhesive: On the other side (i.e., the heat spreader layer side) of the structure prepared in S06, laminate a thermally conductive double-sided adhesive prepared in S04 to form a heat spreader layer with two layers of thermally conductive double-sided adhesive 106, which is called the heat spreader layer under the chip 108; Lamination of the Thermally Conductive Double-Sided Adhesive: On one side of the structure prepared in the S04 step, laminate a thermally conductive double-sided adhesive prepared in S05 to form a heat spreader layer with a layer of thermally conductive double-sided adhesive and two insulating layers, which is called the heat spreader layer on the chip 109; Mounting the Heat Spreader Layer under the Chip: Cut the heat spreader layer under the chip 108 prepared in S07 to a size of 34×100 mm. After peeling off the release film on one side, laminate it with a finned aluminum alloy heat sink, and then peel off the release film on the other side. The aluminum alloy used for the heat sink has a thermal conductivity of 160 W / (m·K), and the heat dissipation surface size is 34×100 mm; Installing the Chip: Bond a MOSFET power chip 101 in the center of the heat sink plate 102. The substrate of the power chip 101 is silicon carbide, with an average heat dissipation power of 28.2 W and a size of 20×23 mm. Fasten the power chip 101 with a fastening screw 107; Mounting the Heat Spreader Layer on the Chip: Cut the heat spreader layer on the chip 109 prepared in the S08 step to a size of 34×106 mm. After peeling off the release film, mount it on the upper surface of the chip, bend it along the chip edge, and then laminate it with the heat spreader layer under the chip 108 to form a double-sided heat dissipation structure.

[0026] Comparative Example 1 The preparation process was basically the same as that of Example 1, except that steps S04, S08, and S11 were not performed, and a single-sided heat dissipation structure was obtained. Other processes and parameters were the same.

[0027] Comparative Example 2 Thermal grease was screen-printed on one side of an alumina ceramic sheet with a thickness of 1 mm. The size of the alumina ceramic sheet matched that of the chip, and thermal grease was also screen-printed at the corresponding position on the heat dissipation surface of the radiator. The thermal conductivity of the ceramic sheet was 16 W / (m·K), and the thermal conductivity of the thermal grease was 2 W / (m·K). Subsequently, the side of the ceramic sheet without screen-printed thermal grease was mounted to the corresponding position of the radiator, and the chip was installed on the other side of the ceramic sheet. The chips and radiators used in this comparative example were the same as those in the example.

[0028] Table 1 Main parameters and test results in the example, Comparative Example 1, and Comparative Example 2

[0029] The above examples, Comparative Example 1, and Comparative Example 2 were tested. The test parameters and results are shown in Table 1. When the average thermal power dissipation of the chip was 28.2 W, the same type of fan was used for air-cooling, and the wind speed was 5.2 m / s. The junction temperature of the field-effect transistor chip manufactured in this example was reduced by 10.1 °C compared with Comparative Example 1 and by 3.0 °C compared with Comparative Example 2. The specific temperature change curve is as Figure 4 shown.

[0030] A comparative analysis was carried out on the example, Comparative Example 1, and Comparative Example 2: In Comparative Example 2, the heat dissipated by the power chip 101 mainly dissipated downward through the thermal grease layer; in Comparative Example 1, the heat generated by the power chip 101 could not only be transferred downward to the radiator, but also rely on the lateral heat transfer ability of the temperature equalization layer 108 under the chip to laterally transfer the heat and then longitudinally transfer it to the radiator or the air. In the example, as Figure 3 shown, the power chip 101 not only has downward longitudinal heat dissipation ( Figure 3 heat dissipation path 1 in Figure 3 ) and lateral heat dissipation through the temperature equalization layer under the chip ( Figure 3 heat dissipation path 2 in

[0031] In summary, the manufacturing method provided by the present invention can be used to prepare a high-efficiency double-sided heat dissipation structure for high-power chips.

[0032] While the present invention has been described with reference to exemplary embodiments, it should be understood that the terms used are illustrative and exemplary rather than restrictive. Since the present invention can be embodied in many forms without departing from the spirit or essence of the invention, it should be understood that the above embodiments are not limited to any of the foregoing details, but rather should be broadly construed within the spirit and scope defined by the appended claims, and thus all variations and modifications falling within the scope of the claims or their equivalents should be covered by the appended claims.

Claims

1. A method for manufacturing a double-sided heat dissipation structure of a high-power chip, characterized in that: The manufacturing steps include: S01, preparation of insulating cloth: impregnating the fiber cloth with a polyamic acid prepolymer solution having a certain solid content and drying it, and repeating the above impregnation and drying steps for multiple times, and then performing imidization treatment to obtain insulating cloth; S02, compounding the insulating cloth and the thermally conductive adhesive layer: coating a thermally conductive adhesive layer on the insulating cloth prepared in S01 to obtain an insulating layer containing the thermally conductive adhesive layer; S03, laminating the insulating layer with the temperature-averaging film: laminating the insulating layer prepared in S02 with the temperature-averaging film, with the side containing the thermally conductive adhesive layer facing the temperature-averaging film, and the laminating process is double-roll hot pressing to obtain a temperature-averaging layer containing a single insulating layer; S04, laminating the insulating layer and the temperature-averaging layer: laminating the temperature-averaging layer containing a single insulating layer prepared in S03 with the insulating layer containing a thermally conductive adhesive layer prepared in S02, with the side containing the thermally conductive adhesive layer facing the temperature-averaging film during laminating, and the laminating process is double-roll hot pressing to obtain a temperature-averaging layer containing a double insulating layer; S05, preparation of thermally conductive double-sided adhesive: adding thermally conductive fillers and additives into adhesive, stirring, and evenly dispersing to form a thermally conductive composite material, and then coating the thermally conductive composite material on the release film to form a thermally conductive double-sided adhesive; S06, compounding a first thermally conductive double-sided adhesive: laminating a layer of the thermally conductive double-sided adhesive prepared in step S04 on one side of the insulating layer of the structure prepared in step S03 to form a temperature-uniform layer including a layer of the thermally conductive double-sided adhesive and a layer of the insulating layer; S07, compounding a second thermally conductive double-sided adhesive: on the other side of the structure obtained in S06, a layer of thermally conductive double-sided adhesive prepared in S05 is attached to form a temperature-averaging layer including two layers of thermally conductive double-sided adhesive and one layer of insulating layer, which is called the temperature-averaging layer under the chip; S08, composite thermally conductive double-sided adhesive: a layer of thermally conductive double-sided adhesive prepared in step S05 is attached to one side of the structure prepared in step S04 to form a temperature-averaging layer including a layer of thermally conductive double-sided adhesive and two insulating layers, which is called the on-chip temperature-averaging layer; S09, mounting the temperature-averaging layer under the chip: cutting the temperature-averaging layer under the chip prepared in S07 into a certain shape, which is consistent with the surface shape of the heat sink on which one side of the chip is mounted, peeling off the release film on one side, and then laminating it with the heat sink, and then peeling off the release film on the other side; S10, installing chips: attaching a single chip or multiple chips to the heat sink, and fastening the chips by fastening screws; S11, mounting the temperature-averaging layer on the chip: cutting the temperature-averaging layer on the chip prepared in step S08 into a certain shape, ensuring that the area of ​​the temperature-averaging layer on the chip is larger than twice the area of ​​the chip upper surface; after peeling off the release film, mounting it on the upper surface of the chip, bending it along the edge of the chip, and then bonding it with the temperature-averaging layer under the chip to form a double-sided heat dissipation structure.

2. The manufacturing method according to claim 1, characterized in that: The solid content of the polyamic acid prepolymer solution in step S01 is 20-40wt.%, the fiber cloth in step S01 contains one or more of ceramic fiber or glass fiber, the thickness of the fiber cloth is 20-250 microns, the imidization in step S01 refers to thermal imidization or chemical imidization, and the insulating strength of the obtained insulating cloth is greater than 100kV / mm, and the longitudinal thermal conductivity is greater than 0.8W / (m·K).

3. The manufacturing method according to claim 1, characterized in that: The thermally conductive adhesive layer of step S02 is composed of a resin matrix and a thermally conductive filler, the resin matrix is ​​one or more of epoxy resin, ethylene-vinyl acetate copolymer, nitrile rubber, chloroprene rubber, silicone pressure-sensitive adhesive, polyester hot melt adhesive, and thermoplastic polyurethane, and the thermally conductive filler is one or more of silicon dioxide, aluminum oxide, magnesium oxide, zinc oxide, silicon, boron nitride, aluminum nitride, silicon nitride, silicon carbide, diamond, carbon nanotubes, graphene, graphite nanosheets, graphite, and metal particles. The thickness of the thermally conductive adhesive layer ranges from 1 to 100 μm.

4. The manufacturing method according to claim 1, characterized in that: In the step S03, the temperature-averaging film contains one or more of silicon carbide, diamond, carbon fiber, carbon nanotubes, graphene, graphite nanosheets, and graphite, has a transverse thermal conductivity greater than 300 W / (m·K), and a thickness of 0.01 mm to 3 mm.

5. The manufacturing method according to claim 1, characterized in that: The thermally conductive composite material of step S05 contains a thermally conductive filler and an adhesive, wherein the thermally conductive filler includes one or more of silicon dioxide, aluminum oxide, magnesium oxide, zinc oxide, silicon, boron nitride, aluminum nitride, silicon nitride, silicon carbide, diamond, carbon nanotubes, graphene, graphite nanosheets, graphite, and metal particles, and the particle size is 0.01 to 200 μm. The adhesive includes one or more of acrylic resin, silicone resin, and synthetic rubber. The thermal conductivity of the prepared thermally conductive double-sided adhesive is greater than 0.5 W / (m·K), the peel strength is greater than 0.2 N / mm, and the thickness is 5 to 50 μm.

6. The manufacturing method according to claim 1, characterized in that: The heat sink in S09 is one or more of copper alloy, aluminum alloy, copper-based composite material, aluminum-based composite material, graphite, thermally conductive plastic, alumina ceramic, aluminum nitride ceramic, silicon nitride ceramic, zirconium oxide ceramic, and boron nitride ceramic, and its thermal conductivity is greater than 5W / (m·K). The heat sink is a fin-shaped radiator or a liquid cooling plate with a flow channel inside.

7. The manufacturing method according to claim 1, characterized in that: The chip in step S10 includes one or more of an insulated gate bipolar transistor, a triode, a diode, and a field effect transistor. The substrate material of the chip is one or more of silicon, silicon carbide, gallium nitride, and gallium arsenide. The heat dissipation power of the chip is greater than 5W, and the side length is 0.5 to 100 mm.

8. A heat dissipation structure for a high-power chip, characterized in that: The heat dissipation structure is prepared by the method according to any one of claims 1 to 7 and has a double-sided heat dissipation function.

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