Production method of square-meter-level perovskite battery assembly

Abstract

The invention discloses a production method of a square-meter-level perovskite cell module, and relates to a production method of a solar cell module, which is characterized in that a P4 laser etching edge cleaning process is changed into a P4 laser etching edge cutting process, so that positive and negative electrodes of a small-size perovskite cell are exposed, and the small-size perovskite cell is suitable for electrical connection; and then the small-size perovskite cell is connected in series and in parallel to achieve a large-size scale. Compared with the prior art, by changing the production process of the perovskite cell part, the perovskite cell part is suitable for electrical splicing, and then a plurality of small-size perovskite cell pieces are spliced and packaged in a series-parallel connection manner, so that a cell panel with a square meter size is obtained, and the perovskite cell has large-scale popularization and application values. The problems that a perovskite large-area thin film is difficult to prepare, the yield is low, and a large-size battery panel cannot be manufactured are solved.

Description

Technical Field

[0001] The present invention relates to a production method of a solar cell module, in particular to a production method of a perovskite cell module. Background Art

[0002] Perovskite cells, also known as perovskite solar cells (PSCs), are a type of solar cell that uses perovskite-type organic / inorganic metal halides as light-absorbing materials. They belong to the third generation of solar cells or new concept solar cells, as shown in Figure 1 .. When exposed to sunlight, the perovskite layer first absorbs photons to generate electron-hole pairs. Due to the difference in exciton binding energy of perovskite materials, these carriers either become free carriers or form excitons. Then, these un-recombined electrons and holes are collected by the electron transport layer and the hole transport layer respectively, and finally an electromotive force is generated to achieve the conversion of light energy to electrical energy. Because the light absorption performance of perovskite materials is much stronger than that of crystalline silicon and the energy conversion process has low losses, high energy conversion can still be achieved under indoor or low-light conditions. Therefore, perovskite cells have high efficiency. At the same time, the raw materials of perovskite cells are rich in reserves, and the environment and energy consumption in the battery processing process are lower than those of crystalline silicon, making their production costs much lower than those of mainstream crystalline silicon batteries. Finally, because they can be made into colored and semi-transparent films, perovskite cells have broad application potential in fields such as building integrated photovoltaics (BIPV).

[0003] At present, it is difficult to reduce the cost of the photovoltaic system under the crystalline silicon system to less than 2.58 yuan per watt, and there is still a gap from the 2 yuan per watt required for the parity of energy storage / photovoltaic hydrogen production. The expected cost of the existing perovskite cell megawatt pilot production line is 1.51 yuan per watt, corresponding to a levelized cost of electricity of 0.38 yuan per degree, which already has cost competitiveness. And perovskite cells can ultimately achieve a cost of 0.68 yuan per watt, corresponding to a levelized cost of electricity of 0.255 yuan per degree, and they are products that can completely replace crystalline silicon batteries. At the same time, due to their high efficiency, low-cost manufacturing, flexible and transparent characteristics, perovskite cells have broad application prospects in various scenarios, including buildings, mobile devices, wearable devices, transportation, etc. With the progress of technology and the increase in R & D investment, the performance and stability of perovskite cells will continue to improve, and they are expected to occupy an important position in the future photovoltaic market.

[0004] However, there are still difficulties in the large-scale application of perovskite solar cells at present. The mainstream perovskite solar cell structure is a multi-layer thin film structure. According to the different positions of the electron transport layer and the hole transport layer, it can be divided into a normal structure and an inverted structure. In the normal structure, starting from the transparent glass substrate, there are an ITO layer (bottom conductive layer), an electron transport layer (ETL), a perovskite layer, a hole transport layer (HTL), and an electrode layer (top conductive layer) in sequence; in the inverted structure, starting from the transparent glass substrate, there are an ITO layer (bottom conductive layer), a hole transport layer (HTL), a perovskite layer, an electron transport layer (ETL), and an electrode layer (top conductive layer) in sequence. Sunlight enters from the transparent glass surface and is absorbed in the perovskite layer. Among them, the preparation processes of the ITO layer, the electron transport layer, the hole transport layer, and the electrode layer are already mature, usually by evaporation or magnetron sputtering; the preparation process of the perovskite layer is the bottleneck restricting the large-scale application of perovskite solar cells at present. The perovskite layer is mainly prepared by a coating process. In the coating of the perovskite layer, it is mainly divided into wet coating and dry coating, and currently the mainstream is wet coating. However, wet coating has a serious defect, that is, the coating uniformity. As long as there is a little hole or defect in the perovskite layer film, the performance of the device will be greatly reduced, and the larger the device area, the probability of defects almost increases geometrically. Therefore, it is difficult to make large devices. Currently, the mainstream size of perovskite solar cell chips is 10 cm × 10 cm to 20 cm × 20 cm, and there is still a certain technical distance from the application at the square meter level. At the same time, the dry coating technology is not yet mature and is less used.

[0005] This application takes a different approach. A number of small-sized perovskite solar cell chips are spliced in series and parallel, and then encapsulated to reach the square meter level size, making it have the value of large-scale popularization and application. Summary of the Invention

[0006] The present invention aims at the deficiencies in the prior art and provides a method for producing a square meter level perovskite solar cell module. By changing part of the production process of the perovskite solar cell to make it suitable for electrical splicing, and then splicing and encapsulating a number of small-sized perovskite solar cell chips in series and parallel to obtain a battery panel with a square meter level size, making the perovskite solar cell have the value of large-scale popularization and application. It overcomes the problems of difficulty in preparing large-area perovskite thin films and low yield, and inability to make large-sized battery panels.

[0007] To solve the above technical problems, the present invention is solved by the following technical solutions: A method for producing a square-meter-level perovskite solar cell module, comprising the following steps: Step A: Select a thin rigid material with a size of 10 cm × 10 cm to 35 cm × 35 cm as the substrate, and then sequentially prepare a bottom conductive layer, a hole transport layer, a perovskite layer, an electron transport layer, and a top conductive layer on the substrate to form a perovskite solar cell chip. Subsequently, trim the edges of the perovskite solar cell chip. When trimming the edges, the top conductive layer, the electron transport layer, the perovskite layer, and the hole transport layer are respectively removed from both sides of the perovskite solar cell chip, and the bottom conductive layers exposed on both sides are regarded as the positive and negative electrodes in the electrodes of the perovskite solar cell chip; Step B: Detect and sort the perovskite solar cell chips. The detection items include electrical property detection and quality detection. Reject the products that fail the quality detection and electrical property detection, and sort out the perovskite solar cell chips that pass the quality detection and electrical property detection and have consistent electrical performance; Step C: Connect several perovskite solar cell chips in series. When connecting in series, the positive and negative electrodes of adjacent perovskite solar cell chips are adjacent to each other, and then the positive and negative electrodes of adjacent perovskite solar cell chips are electrically connected in sequence to form a perovskite solar cell series group; Step D: Connect several perovskite solar cell series groups in parallel. When connecting in parallel, the same-level sides of adjacent perovskite solar cell series groups are adjacent to each other, and then the same-level sides of adjacent perovskite solar cell series groups are electrically connected in sequence to form a perovskite solar cell module; Step E: Lay the glass, the encapsulant film, the perovskite solar cell module, the encapsulant film, and the backsheet in sequence from top to bottom. When laying, each layer is aligned to be horizontal and vertical, and at the same time, the sizes of the glass, the encapsulant film, and the backsheet are the same and larger than the size of the perovskite solar cell module so that the perovskite solar cell module is wrapped inside; Step F: Put the laid perovskite solar cell module into a laminator, evacuate the air inside the module through vacuum pumping, and then heat and press to melt the encapsulant film to bond the perovskite solar cell module, the glass, and the backsheet together to form a perovskite solar cell component; Step G: After laminating, cut off the burrs formed by the outward extension and curing due to the pressure of the melting encapsulant film during laminating; Step H: Install a frame for the perovskite solar cell component, and fill the gap between the frame and the perovskite solar cell component with resin.

[0008] In the above technical solutions, preferably, it further includes Step C1 for replacing Step C and Step D1 for replacing Step D; Step C1: Connect several perovskite solar cell chips in parallel. When connecting in parallel, the same-level electrodes of adjacent perovskite solar cell chips are adjacent to each other, and then the same-level electrodes of adjacent perovskite solar cell chips are electrically connected in sequence to form a perovskite solar cell parallel group; Step D1: Connect several perovskite solar cell parallel groups in series. When connecting in series, the positive and negative sides of adjacent perovskite solar cell parallel groups are adjacent to each other, and then the positive and negative electrodes of adjacent perovskite solar cell series groups are electrically connected in sequence to form a perovskite solar cell module.

[0009] In the above technical solution, preferably, in step C, when the perovskite solar cells are connected in series, the solar cells are arranged in a row, and each cell should be aligned vertically and closely adjacent horizontally; in step D, when the perovskite solar cell series connection group is connected in parallel, each row should be aligned horizontally and closely adjacent vertically.

[0010] In the above technical solution, preferably, in step C1, when the perovskite solar cells are connected in parallel, the solar cells are arranged in a column, and each cell should be aligned horizontally and closely adjacent vertically; in step D1, when the perovskite solar cell parallel connection group is connected in series, each column should be aligned vertically and closely adjacent horizontally.

[0011] In the above technical solution, preferably, in step A, when trimming the perovskite solar cells, the trimming width is not greater than 1.5 mm.

[0012] In the above technical solution, preferably, in step E, the perovskite solar cell group is located at the center of the glass, encapsulant film, and backsheet.

[0013] In the above technical solution, preferably, in step C, step D, or step C1, step D1, the electrical connection includes soldering ribbon alloying, alloying after soldering ribbon film lamination, alloying after soldering ribbon adhesive lamination, alloying after copper wire composite film lamination, and conductive tape bonding.

[0014] In the above technical solution, preferably, in step F, the lamination temperature is between 115 °C and 150 °C, the lamination pressure is divided into a pressurization stage and a lamination stage. In the pressurization stage, the pressure is gradually increased from vacuum to -70 kPa to -20 kPa, and the lamination is carried out at -70 kPa to -20 kPa in the lamination stage. The lamination time is determined according to the area of the perovskite solar cell group.

[0015] In the above technical solution, preferably, the gap between adjacent perovskite solar cells does not exceed 3 mm.

[0016] In the above technical solution, preferably, it further includes the following continuous steps: Step H: Apply a positive or negative bias voltage to the solar cell using a regulated power supply, and then observe the infrared thermal image to determine whether there are defects such as hidden cracks and poor soldering in the solar cells; Step I: Install a frame for the perovskite solar cell module, and fill the gap between the frame and the perovskite solar cell module with resin; Step J: Solder a junction box at the back lead of the perovskite solar cell module to facilitate the electrical connection between the perovskite solar cell module and other devices or batteries; Step K: Apply a voltage between the electrode lead and the frame of the perovskite solar cell module to test the voltage resistance and insulation strength of the perovskite solar cell module; Step M: Calibrate the output power of the perovskite solar cell module, test its output characteristics, and determine the quality grade of the module.

[0017] As is well known, due to process problems, the size of perovskite solar cells is currently limited to less than 30 cm × 30 cm. Even for 30 cm × 30 cm solar cells, there are performance defects in the extraction and transmission of photoinduced carriers. The mainstream size of solar cells is between 10 cm × 10 cm and 20 cm × 20 cm. However, if perovskite solar cells cannot be made into square meters, their commercial value is low, and the comprehensive cost is not as good as that of crystalline silicon battery packs. Therefore, this application breaks through the size limitation and finds a new way. It splices existing small-sized perovskite solar cells into square-meter-level solar cells in a series-parallel connection form.

[0018] First, it is necessary to understand the structure and main production process of existing perovskite solar cells. Perovskite solar cells mainly consist of five parts, including a bottom conductive layer, a hole transport layer, an electron transport layer, a perovskite light-absorbing layer, and a top conductive layer, as follows. Top conductive layer: Light enters from here and transmits the collected photoelectrons to the external circuit. Perovskite light-absorbing layer: An active material used to absorb sunlight and generate photoelectrons. Electron transport layer (ETL): Used to transport electrons and block holes. Hole transport layer (HTL): Used to extract and transport photo-generated holes. Bottom conductive layer: Used to transport charges and connect to the external circuit.

[0019] Taking the inverted planar structure as an example, its process flow is as follows: Preparation of conductive transparent glass - Laser P1 etching - Preparation of the first transport layer film - Annealing / drying - Preparation of the perovskite layer film - Annealing and drying - Preparation of the second transport layer film - Annealing / drying - Laser P2 etching - Preparation of the bottom electrode (back electrode) - Laser P3 etching - P4 laser edge cleaning - Testing, sorting, and encapsulation. Among them, P1 laser etching: After the deposition of the transparent conductive electrode TCO and before the deposition of the charge transport layer, laser etching is carried out to form independent strip-shaped conductive electrodes. P2 laser etching: After the deposition of the second charge transport layer and before the deposition of the bottom electrode, laser etching is carried out to remove the HTL / perovskite layer / ETL, leaving the TCO layer to form a gap. When depositing the bottom electrode layer, the metal will fill this gap, thereby connecting the bottom electrode of one cell to the transparent top electrode of the next cell. P3 laser etching: Remove the bottom electrode / HTL (hole layer) / perovskite layer / ETL (electron layer) of adjacent cells, leaving the TCO layer to achieve a separation effect. P4 edge cleaning: Remove the edge area of the film, and clear it after using laser scribing to divide the area.

[0020] In the etching process from P1 to P3, the laser achieves a cutting effect, quickly heating the material surface to vaporization and forming groove lines, so as to form a separate module that blocks the conduction of current, achieving a chip-splitting effect to achieve the goal of increasing voltage and connecting cells in series. That is, the cells on the solar cell have been split and connected in series ( Figure 1), we then connect the solar cells in series. As long as the gap between adjacent solar cells is smaller, the series connection effect between the solar cells will be infinitely close to the in-cell series connection effect. For this purpose, we perform edge cutting on both sides of the solar cells. The p4 edge cutting in this application is different from the P4 edge cleaning in the existing process. In the existing process, P4 edge cleaning is to remove the edge area of the thin film. The P4 edge cutting in this application actually cuts off the hole transport layer, electron transport layer, perovskite light absorption layer, and top conductive layer in the edge area on both sides of the battery, exposing the bottom conductive layer. At this time, the exposed ITO conductive layer is the positive and negative electrodes of the solar cell, and then electrical connection and fixation are carried out through photovoltaic solder tapes or conductive adhesives. Because additional electrical connection materials are required, the resistance between the solar cells is greater than the resistance inside the solar cell. However, as long as the number of series and parallel solar cells is limited, the overall resistance is still within an acceptable range after splicing reaches one square meter.

[0021] In this application, it is necessary to connect the perovskite solar cells in series and parallel. Among them, the solar cells are connected in series by connecting the solar cells one by one, increasing the overall voltage. All solar cells in series share the same current. Doing so can improve the overall performance of the battery pack, meet different energy needs, and ensure that the device can operate normally and efficiently. The solar cells are connected in parallel by connecting the positive and negative electrodes of the solar cells respectively, increasing the total current. Parallel connection improves the fault tolerance of the module. Even if one solar cell is damaged, it will not affect the current output of the entire module. However, all parallel-connected solar cells need to maintain the same voltage. In this application, the form and order of series and parallel connection are not fixed and can be adjusted according to the total power output of the final battery pack. However, all solar cells need to have consistent performance in series and parallel to avoid the weakest solar cell restricting the overall performance. Therefore, an important step in this application is the detection and sorting of perovskite solar cells. Each solar cell in each square-meter-level battery pack needs to have consistent electrical performance and specification dimensions. Consistent electrical performance means consistent overall performance, and consistent specification dimensions mean lower connection resistance between perovskite solar cells.

[0022] In this application, the lamination of perovskite batteries is also an important step. Since the battery pack in this application reaches the square-meter level, and each perovskite solar cell in the group needs to be electrically connected to adjacent solar cells, due to the change in size and the fact that the spliced solar cells are not completely fixed, the difficulty of lamination increases. And in some processes, the alloying of the solder tape needs to be completed in the lamination process. Therefore, the quality of lamination directly affects the quality of the square-meter-level perovskite battery pack. For this reason, we have specifically improved the lamination method.

[0023] Compared with the prior art, in the case where the large-scale production of perovskite batteries has fallen into a technical bottleneck, this application finds a new way. By connecting small-sized perovskite solar cells in series and parallel to reach a battery panel of square-meter size, the perovskite battery has the value of production and life applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1It is a schematic diagram of an existing perovskite solar cell.

[0025] Figure 2 It is a schematic diagram of the structure of the spliced perovskite solar cell of the present application.

[0026] Figure 3 It is another schematic diagram of the structure of the spliced perovskite solar cell of the present application. Detailed implementation manners

[0027] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all embodiments. Based on the embodiments described in the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

[0028] Embodiment 1, a method for producing a square-meter-level perovskite solar cell module, comprising the following steps: Step A: fabricate a bottom-transparent perovskite solar cell with a size of 10 cm×10 cm, the transparent substrate is glass, and then a bottom conductive layer, a hole transport layer (HTL), a perovskite layer (PVK), an electron transport layer (ETL), and a top conductive layer are sequentially prepared on the glass substrate to form a perovskite solar cell chip.

[0029] The bottom conductive layer is a TCO layer (transparent conductive oxide layer), specifically a transparent conductive thin film. The bottom conductive layer is selected from one of the following transparent conductive thin films; ITO thin film: indium tin oxide, IZO thin film: indium zinc oxide, IWO thin film: indium tungsten oxide, AZO thin film: aluminum-doped zinc oxide, BZO thin film: boron-doped zinc oxide, GZO: gallium-doped zinc oxide, IGZO: indium gallium zinc oxide. In this embodiment, the ITO thin film is preferably used, and the ITO thin film is deposited on the glass substrate by sputtering. Subsequently, P1 laser etching is performed, and then laser etching is performed after the deposition of the transparent conductive electrode TCO and before the deposition of the charge transport layer to form independent strip-shaped conductive electrodes.

[0030] The hole transport layer is deposited on the bottom conductive layer through a coating (PVD) process. The perovskite layer is deposited on the hole transport layer through a coating printing or coating (PVD) process. The electron transport layer is deposited on the perovskite layer through an RPD ion plating process. Subsequently, P2 laser etching is performed. After the deposition of the electron transport layer and before the deposition of the top conductive layer, laser etching is carried out to remove the hole transport layer, the perovskite layer, and the electron transport layer, leaving the bottom conductive layer to form an empty gap. When the top conductive layer is deposited, the metal will fill this empty gap, thereby connecting the top conductive layer of one cell to the bottom conductive layer of the next cell to form a series connection inside the cell sheet.

[0031] The top conductive layer is deposited on the electron transport layer through a magnetron sputtering or evaporation process and fills the empty gap generated by P2 laser etching. Subsequently, P3 laser etching is performed to remove the top conductive layer, the hole transport layer, the perovskite layer, and the electron transport layer of adjacent cells in the cell sheet, leaving the bottom conductive layer to achieve a separation effect. The top conductive layer is a metal electrode, and the metal electrode is one of molybdenum Mo, platinum Pt, gold Au, aluminum Al, antimony Ti, niobium Ni, copper Cu, and silver Ag. The top electrode can also be a metal top electrode with a "sandwich" structure of plating a layer of ITO, then a layer of metal electrode, and then another layer of ITO. In this embodiment, copper Cu is preferably used as the top electrode.

[0032] Subsequently, P4 laser trimming is performed on the cell sheet to remove the top conductive layer, the hole transport layer, the perovskite layer, and the electron transport layer on both sides of the cell sheet, leaving the bottom conductive layer. The trimming width is 1.5 mm. At this time, the bottom conductive layer is regarded as the positive and negative electrodes in the perovskite cell sheet electrodes respectively.

[0033] Step B: Detect and sort the perovskite cell sheets. The detection items include electrical property detection and quality detection. Reject the products that fail in quality detection and electrical property detection, and sort out the perovskite cell sheets that pass the quality detection and electrical property detection and have consistent electrical performance. The cell sheets should have no defects such as cracks, scratches, and stains on the appearance, with neat edges and dimensions meeting the specifications. Use tools such as optical microscopes to check the surface of the cell sheets to ensure there are no appearance defects. Use tools such as laser rangefinders to measure the size parameters such as the length, width, and thickness of the cell sheets. The cell sheets should have stable electrical parameters such as open-circuit voltage, short-circuit current, and maximum power, good light absorption ability and conversion efficiency, and low surface reflectivity. Measure the open-circuit voltage, short-circuit current, maximum power, etc. of the cell sheets through equipment such as simulated solar light sources and photovoltaic conversion efficiency testers. At the same time, check whether there is a leakage phenomenon in the cell sheets and measure the contact resistance of the cell sheets.

[0034] Step C: Connect 10 perovskite cells with a size of 10 cm × 10 cm in series. When connecting in series, the cells are arranged in a row, and each cell should be aligned vertically and closely adjacent horizontally with as few gaps as possible. Then, solder tapes are welded on both sides of the electrodes of adjacent cells with the positive and negative poles connected. The series connection process is achieved simultaneously with the welding alloying. Then, glue is applied to further paste the solder tapes on the electrodes, and finally, a series-connected group of perovskite cells is formed. The solder tape is one of the tin-coated copper tape, lead-containing and silver-containing tin-coated copper tape, and lead-containing tin-coated copper tape.

[0035] Step D: Connect 10 series-connected groups of perovskite cells in parallel. When connecting in parallel, each row should be aligned horizontally and closely adjacent vertically with as few gaps as possible. Then, solder tapes are welded to the heads and tails of adjacent series-connected groups of perovskite cells. At this time, solder tapes can also be further welded at the middle positions of adjacent series-connected groups of perovskite cells. Preferably, the solder tapes correspond in the series-connected groups of perovskite cells. In special use environments, they may not correspond. The welding is performed on both sides of adjacent series-connected groups of perovskite cells with the same poles connected. The parallel connection process is achieved simultaneously with the welding alloying. Then, glue is applied to further paste the solder tapes on the electrodes, and finally, a perovskite cell group with a size of 100 cm × 100 cm is formed. The solder tape is one of the tin-coated copper tape, lead-containing and silver-containing tin-coated copper tape, and lead-containing tin-coated copper tape.

[0036] During the series and parallel connection of the cells, the welding should be firm to avoid the occurrence of false soldering. Determine the thickness of the solder tape according to the thickness of the cells and the short-circuit current. The width of the solder tape should be the same as the width of the main grid line of the cell. The hardness of the solder tape generally depends on the thickness of the cell and the welding tool.

[0037] Step E: Lay the glass, EVA film, perovskite cell group, EVA film, and backplane in sequence from top to bottom. When laying, each layer should be aligned to be horizontal and vertical. At the same time, the sizes of the glass, EVA film, and backplane are the same and larger than the size of the perovskite cell group so that the perovskite cell group is wrapped inside. The perovskite cell group is located at the center of the glass, EVA film, and backplane, and the glass, EVA film, and backplane each extend at least 5 mm from the four edges of the perovskite cell group. Among them, the thickness of the glass is 2 mm, the thickness of the cell is 200 μm, the thickness of the EVA film is 0.5 mm, and the EVA film material is thermoplastic polyolefin self-adhesive film (TPO) or ethylene-vinyl acetate copolymer (EVA). The thickness of the backplane is 2 mm, and the backplane material is glass.

[0038] Step F: Place the laid perovskite battery module into a laminator and evacuate the air inside the module by vacuum pumping. The vacuum pumping time is 100 s, and the vacuum state is -98 Kpa. Then gradually apply pressure. First, increase the pressure to -70 Kpa in 5 s, then increase the pressure to -50 Kpa in the following 5 s. Subsequently, perform heating until the lamination temperature reaches 120 °C, and at the same time increase the pressure to -30 Kpa. After the temperature and pressure are reached, perform lamination, and the lamination time is 2000 s.

[0039] Step G: After lamination, cut off the burrs formed by the extension and solidification of the adhesive film due to pressure during lamination. At this time, the perovskite battery pack is completely wrapped between the glass and the backplane. Step H: Apply a positive or negative bias voltage to the solar cell using a regulated power supply, and then observe the infrared thermal image to determine whether there are defects such as hidden cracks and virtual soldering in the cell. Step I: Install a frame on the perovskite battery module, fill the gap between the frame and the perovskite battery module with resin, and connect the frames with corner keys to further seal the battery module to extend the service life of the battery. Step J: Weld a junction box at the back lead of the perovskite battery module to facilitate the electrical connection between the perovskite battery module and other devices or batteries. Step K: Apply a voltage between the electrode lead and the frame of the perovskite battery module to test the voltage withstand and insulation strength of the perovskite battery module. The insulation voltage withstand test of photovoltaic modules is usually carried out using direct current. A certain voltage is applied to the photovoltaic module within a certain period of time to detect its insulation performance. The voltage in the test is usually higher than the rated voltage of the module to ensure the accuracy of the test. The insulation voltage withstand test is generally divided into two types: power frequency insulation voltage withstand test and direct current insulation voltage withstand test. The power frequency insulation voltage withstand test means applying a power frequency voltage to the photovoltaic module and evaluating its insulation performance by detecting the insulation resistance between it and the ground. During the test, connect the anode and cathode of the photovoltaic module to the ground, and then apply a certain power frequency voltage. If the insulation resistance is less than a certain standard value, it means that there is a problem with the insulation performance of the module.

[0040] DC insulation withstand voltage test applies DC voltage to the PV module and evaluates the insulation performance by detecting the insulation resistance between the insulation material and the ground. During the test, the anode and cathode of the PV module are disconnected, and then the high-voltage power supply is connected to the anode and cathode respectively, and the test is carried out by applying a certain DC voltage. If the insulation resistance is less than a certain standard value, it means that there is a problem with the insulation performance of the module. Step M: Calibrate the output power of the perovskite solar cell module, test its output characteristics, and determine the quality grade of the module. First, ensure that the test environment meets the standard conditions of temperature (20 °C), light intensity (common standards such as AM1.5G spectrum and calibrated by a standard silicon cell for light intensity), and humidity (20%). Subsequently, place the perovskite solar cell module under standard test conditions, simulate sunlight irradiation through a solar simulator, and use a photoelectric conversion efficiency test device to record the output power of the module at different voltages and currents in real time, obtain the current-voltage curve (J-V curve), and find the maximum power point of the perovskite solar cell. In addition to the maximum power point, key parameters such as the open-circuit voltage (Voc), short-circuit current (Jsc), and fill factor (FF) of each cell need to be comprehensively tested. These parameters together reflect the conversion efficiency, stability, and working range of the module, which are crucial for evaluating the quality of the module. Based on the above analysis results, combined with comprehensive factors such as the manufacturing process, material quality, and test data of the module, determine a quality grade for the perovskite solar cell module. This grade will directly reflect the reliability, durability, and use value of the module.

[0041] Example 2, a production method for a square-meter-level perovskite solar cell module, includes the following steps: Step A: Fabricate a top-transparent perovskite solar cell with a size of 10 cm × 20 cm, with a ceramic substrate, and then sequentially prepare a bottom conductive layer, a hole transport layer (HTL), a perovskite layer (PVK), an electron transport layer (ETL), and a top conductive layer on the ceramic substrate to form a perovskite solar cell chip.

[0042] The bottom conductive layer is a metal electrode, and the metal electrode is deposited on the ceramic substrate by magnetron sputtering or evaporation process. The metal electrode is one of molybdenum Mo, platinum Pt, gold Au, aluminum Al, antimony Ti, niobium Ni, copper Cu, and silver Ag. In this example, molybdenum Mo is preferably used. Subsequently, P1 laser etching is carried out. After the deposition of the metal electrode and before the deposition of the charge transport layer, laser etching is carried out to form independent strip-shaped conductive electrodes.

[0043] The hole transport layer is deposited on the bottom conductive layer through a coating (PVD) process. The perovskite layer is deposited on the hole transport layer through a coating and printing or coating (PVD) process. The electron transport layer is deposited on the perovskite layer through an RPD ion plating process. Subsequently, P2 laser etching is performed. After the deposition of the electron transport layer and before the deposition of the top conductive layer, laser etching is carried out to remove the hole transport layer, the perovskite layer, and the electron transport layer, leaving the bottom conductive layer and forming an empty gap. When the top conductive layer is deposited, the metal will fill this empty gap, thereby connecting the top conductive layer of one cell to the bottom conductive layer of the next cell to form a series connection inside the cell sheet.

[0044] The top conductive layer is a TCO layer (transparent conductive oxide layer), specifically a transparent conductive thin film. The bottom conductive layer is selected from one of the following transparent conductive thin films; ITO thin film: namely indium tin oxide (Indium Tin Oxide), IZO thin film: indium zinc oxide (Indium Zinc Oxide), IWO thin film: namely indium tungsten oxide (Indium Tungsten Oxide), AZO thin film: aluminum-doped zinc oxide (Aluminium-doped Zinc Oxide), BZO thin film: boron-doped zinc oxide (Boron-doped Zinc Oxide), GZO: gallium-doped zinc oxide (Gallium-doped Zinc Oxide), IGZO: indium gallium zinc oxide (Indium Gallium Zinc Oxide). In this embodiment, the IWO thin film is preferably used. The IWO thin film is deposited on the electron transport layer through magnetron sputtering and fills the empty gap generated by P2 laser etching. Subsequently, P3 laser etching is performed to remove the top conductive layer, the hole transport layer, the perovskite layer, and the electron transport layer of adjacent cells in the cell sheet, leaving the bottom conductive layer, thereby achieving a separation effect.

[0045] Subsequently, P4 laser trimming is performed on the cell sheet to remove the top conductive layer, the hole transport layer, the perovskite layer, and the electron transport layer on both sides of the cell sheet, leaving the bottom conductive layer. The trimming width is 1 mm. At this time, the bottom conductive layer is regarded as the positive and negative electrodes in the perovskite cell sheet electrode respectively.

[0046] Step B: Detect and sort the perovskite cell sheets. The detection items include electrical property detection and quality detection. Reject the products that fail the quality detection and electrical property detection, and sort out the perovskite cell sheets that pass the quality detection and electrical property detection and have consistent electrical performance.

[0047] Step C: Connect ten perovskite cells with a size of 10 cm × 20 cm in series. When connecting in series, the cells are arranged in a row, and each cell should be aligned vertically and closely adjacent horizontally with as few gaps as possible. Apply adhesive dots (such as UV glue, hot melt glue, etc.) between the fine grids, and use a UV lamp to dot and cure the entire photovoltaic solder ribbon on the positive and negative electrodes of the cells. The photovoltaic solder ribbon is one of tinned copper tape, lead-containing and silver-containing tinned copper tape, and lead-containing tinned copper tape.

[0048] Step D: Connect five series-connected groups of perovskite cells in parallel. When connecting in parallel, each row should be aligned horizontally and closely adjacent vertically with as few gaps as possible. Then apply adhesive dots (such as UV glue, hot melt glue, etc.), and use a UV lamp to dot and cure the entire photovoltaic solder ribbon on the head and tail of adjacent series-connected groups of perovskite cells. At this time, it is also possible to further apply and cure the photovoltaic solder ribbon at the middle position between adjacent series-connected groups of perovskite cells. Preferably, the photovoltaic solder ribbon corresponds in the series-connected groups of perovskite cells. In special usage environments, it may not correspond. Finally, a perovskite cell module with a size of 100 cm × 100 cm is formed. The photovoltaic solder ribbon is one of tinned copper tape, lead-containing and silver-containing tinned copper tape, and lead-containing tinned copper tape.

[0049] Step E: Lay the glass, EVA film, perovskite cell module, EVA film, and backsheet in sequence from top to bottom. When laying, each layer should be aligned to be horizontal and vertical. At the same time, the sizes of the glass, EVA film, and backsheet are the same and larger than the size of the perovskite cell module so that the perovskite cell module is wrapped inside. The perovskite cell module is located at the center of the glass, EVA film, and backsheet, and the glass, EVA film, and backsheet each extend at least 5 mm beyond the four edges of the perovskite cell module. Among them, the thickness of the glass is 2 mm, the thickness of the cell is 200 μm, the thickness of the EVA film is 0.5 mm, and the EVA film material is thermoplastic polyolefin self-adhesive film (TPO) or ethylene-vinyl acetate copolymer (EVA). The thickness of the backsheet is 2 mm, and the backsheet material is glass.

[0050] Step F: Place the laid perovskite cell module into a laminator and evacuate the air inside the module by vacuum pumping. The vacuum pumping time is 100 s, and the vacuum state is -98 Kpa. Then gradually apply pressure. First, increase the pressure to -70 Kpa in 5 s, then increase the pressure to -50 Kpa in the next 5 s, and then heat until the lamination temperature of 220° is reached. This temperature is also the temperature for the alloying of the photovoltaic solder ribbon. At the same time, increase the pressure to -30 Kpa. After the temperature and pressure are reached, perform lamination. The lamination time is 2000 s. After the lamination is completed, the solder ribbon and the cell are alloyed.

[0051] Step G: After lamination, trim the burrs formed by the outward extension and curing of the adhesive film due to melting and pressure during lamination. At this time, the perovskite battery pack is completely wrapped between the glass and the backplane. Step H: Apply a positive or negative bias voltage to the solar cell using a regulated power supply, and then observe the infrared thermal image to determine whether there are defects such as hidden cracks and poor soldering in the cell. Step I: Install a frame on the perovskite battery module. Fill the gap between the frame and the perovskite battery module with resin, and connect the frames with corner keys to further seal the battery module and extend the service life of the battery. Step J: Weld a junction box at the back lead of the perovskite battery module to facilitate the electrical connection between the perovskite battery module and other devices or batteries. Step K: Apply a voltage between the electrode lead and the frame of the perovskite battery module to test the voltage resistance and insulation strength of the perovskite battery module. Step M: Calibrate the output power of the perovskite battery module, test its output characteristics, and determine the quality grade of the module.

[0052] Example 3, a production method of a square-meter-level perovskite battery module, includes the following steps: Step A: Fabricate a double-sided transparent perovskite battery with a size of 15 cm × 15 cm. The substrate is glass, and then a bottom conductive layer, a hole transport layer (HTL), a perovskite layer (PVK), an electron transport layer (ETL), and a top conductive layer are sequentially prepared on the glass substrate to form a perovskite cell.

[0053] The bottom conductive layer is a TCO layer (transparent conductive oxide layer), specifically a transparent conductive thin film. The bottom conductive layer is selected from one of the following transparent conductive thin films; ITO thin film: indium tin oxide, IZO thin film: indium zinc oxide, IWO thin film: indium tungsten oxide, AZO thin film: aluminum-doped zinc oxide, BZO thin film: boron-doped zinc oxide, GZO: gallium-doped zinc oxide, IGZO: indium gallium zinc oxide. In this example, the ITO thin film is preferably used, and the ITO thin film is deposited on the glass substrate by sputtering. Subsequently, P1 laser etching is performed. After the deposition of the transparent conductive electrode TCO and before the deposition of the charge transport layer, laser etching is performed to form independent strip-shaped conductive electrodes.

[0054] The hole transport layer is deposited on the bottom conductive layer through a coating (PVD) process. The perovskite layer is deposited on the hole transport layer through a coating and printing or coating (PVD) process. The electron transport layer is deposited on the perovskite layer through a vacuum evaporation process. Subsequently, P2 laser etching is performed. After the deposition of the electron transport layer and before the deposition of the top conductive layer, laser etching is carried out to remove the hole transport layer, the perovskite layer, and the electron transport layer, leaving the bottom conductive layer and forming an empty gap. When the top conductive layer is deposited, the metal will fill this empty gap, thereby connecting the top conductive layer of one cell to the bottom conductive layer of the next cell to form a series connection inside the cell sheet.

[0055] The top conductive layer is a TCO layer (transparent conductive oxide layer), specifically a transparent conductive thin film. The bottom conductive layer is selected from one of the following transparent conductive thin films; ITO thin film: namely indium tin oxide (Indium Tin Oxide), IZO thin film: indium zinc oxide (Indium Zinc Oxide), IWO thin film: namely indium tungsten oxide (Indium Tungsten Oxide), AZO thin film: aluminum-doped zinc oxide (Aluminium-doped Zinc Oxide), BZO thin film: boron-doped zinc oxide (Boron-doped Zinc Oxide), GZO: gallium-doped zinc oxide (Gallium-doped Zinc Oxide), IGZO: indium gallium zinc oxide (Indium Gallium Zinc Oxide). In this embodiment, the IZO thin film is preferably used. The IZO thin film is deposited on the electron transport layer through magnetron sputtering and fills the empty gap generated by P2 laser etching. Subsequently, P3 laser etching is performed to remove the top conductive layer, the hole transport layer, the perovskite layer, and the electron transport layer of adjacent cells in the cell sheet, leaving the bottom conductive layer, thereby achieving a separation effect.

[0056] Subsequently, P4 laser trimming is performed on the cell sheet to remove the top conductive layer, the hole transport layer, the perovskite layer, and the electron transport layer on both sides of the cell sheet, leaving the bottom conductive layer. The trimming width is 1 mm. At this time, the bottom conductive layer and the top conductive layer are regarded as the positive and negative electrodes in the perovskite cell sheet electrode, respectively.

[0057] Step B: Detect and sort the perovskite cell sheets. The detection items include electrical property detection and quality detection. Reject the products that fail the quality detection and electrical property detection, and sort out the perovskite cell sheets that pass the quality detection and electrical property detection and have consistent electrical performance.

[0058] Step C: Connect 10 perovskite cells with a size of 15 cm × 15 cm in parallel. When connecting in parallel, the electrodes of adjacent perovskite cell sheets are adjacent to the same level. The cell sheets are arranged in a row, and each sheet should be aligned left and right and closely connected up and down with as few gaps as possible.

[0059] Step D: Connect 10 series-connected groups of perovskite cells in series. When connecting in series, the positive and negative sides of adjacent parallel groups of perovskite cells are adjacent to each other. Each column should be aligned vertically, and the cells should be closely connected horizontally with as few gaps as possible. Finally, a perovskite cell group with a size of 150 cm × 150 cm is formed.

[0060] Select a 150 cm × 150 cm diaphragm according to the size of the perovskite cell group. Then, determine the number of photovoltaic solder tapes and their positions on the diaphragm according to the electrical connection positions of the perovskite cell group. Fix the photovoltaic solder tapes on the diaphragm with glue. Finally, cover the diaphragm on the perovskite cell group. When covering, the positions of the diaphragm and the perovskite cell group should be the same, and the photovoltaic solder tapes should be in the designed positions. The photovoltaic solder tape is one of tinned copper tape, tinned copper tape containing lead and silver, and tinned copper tape containing lead.

[0061] Step E: Lay the glass, EVA film, perovskite cell group, EVA film, and backsheet in sequence from top to bottom. When laying, each layer should be aligned to be horizontal and vertical. At the same time, the sizes of the glass, EVA film, and backsheet are the same and larger than the size of the perovskite cell group so that the perovskite cell group is wrapped inside. The perovskite cell group is located at the center of the glass, EVA film, and backsheet, and the glass, EVA film, and backsheet each extend at least 5 mm from the four edges of the perovskite cell group. Among them, the thickness of the glass is 2 mm, the thickness of the cell is 200 μm, the thickness of the EVA film is 0.5 mm, and the material of the EVA film is thermoplastic polyolefin self-adhesive film (TPO) or ethylene-vinyl acetate copolymer (EVA). The thickness of the backsheet is 2 mm, and the material of the backsheet is glass.

[0062] Step F: Place the laid perovskite cell module into a laminator and evacuate the air inside the module. The evacuation time is 100 s, and the vacuum state is -98 Kpa. Then gradually apply pressure. First, increase the pressure to -70 Kpa in 5 s, then increase the pressure to -50 Kpa in the next 5 s. Subsequently, heat until the lamination temperature of 120 °C is reached, which is also the temperature for the alloying of the photovoltaic solder tape. At the same time, increase the pressure to -30 Kpa. After the temperature and pressure are reached, perform lamination. The lamination time is 1800 s. After the lamination is completed, the solder tape and the cell are alloyed.

[0063] Step G: After lamination, trim the burrs formed by the outward extension and curing of the adhesive film due to melting and pressure during lamination. At this time, the perovskite battery pack is completely wrapped between the glass and the backplane. Step H: Apply a positive or negative bias voltage to the solar cell using a regulated power supply, and then observe the infrared thermal image to determine whether there are defects such as hidden cracks and false soldering in the battery chip. Step I: Install a frame on the perovskite battery module, fill the gap between the frame and the perovskite battery module with resin, and connect the frames with corner keys to further seal the battery module to extend the service life of the battery. Step J: Weld a junction box at the back lead of the perovskite battery module to facilitate the electrical connection between the perovskite battery module and other devices or batteries. Step K: Apply a voltage between the electrode lead and the frame of the perovskite battery module to test the voltage resistance and insulation strength of the perovskite battery module. Step M: Calibrate the output power of the perovskite battery module, test its output characteristics, and determine the quality grade of the module.

[0064] Example 4, a production method for a square-meter-level perovskite battery module, includes the following steps: Step A: Fabricate a top-transparent perovskite battery with a size of 20 cm × 20 cm, with a ceramic substrate, and then sequentially prepare a bottom conductive layer, a hole transport layer (HTL), a perovskite layer (PVK), an electron transport layer (ETL), and a top conductive layer on the ceramic substrate to form a perovskite battery chip.

[0065] The bottom conductive layer is a metal electrode, and the metal electrode is deposited on the ceramic substrate through magnetron sputtering or evaporation process. The metal electrode is one of molybdenum Mo, platinum Pt, gold Au, aluminum Al, antimony Ti, niobium Ni, copper Cu, and silver Ag. In this example, molybdenum Mo is preferably used. Subsequently, P1 laser etching is performed. Laser etching is carried out after the deposition of the metal electrode and before the deposition of the charge transport layer to form independent strip-shaped conductive electrodes.

[0066] The hole transport layer is deposited on the bottom conductive layer through a coating (PVD) process, the perovskite layer is deposited on the hole transport layer through a coating printing or coating (PVD) process, and the electron transport layer is deposited on the perovskite layer through an RPD ion plating process. Subsequently, P2 laser etching is performed. Laser etching is carried out after the deposition of the electron transport layer and before the deposition of the top conductive layer to remove the hole transport layer, the perovskite layer, and the electron transport layer, leaving the bottom conductive layer to form an empty gap. When the top conductive layer is deposited, the metal will fill this empty gap, thereby connecting the top conductive layer of one battery to the bottom conductive layer of the next battery to form a series connection inside the battery chip.

[0067] The top conductive layer is a TCO layer (transparent conductive oxide layer), specifically a transparent conductive thin film. The bottom conductive layer is selected from one of the following transparent conductive thin films: ITO thin film: Indium Tin Oxide, IZO thin film: Indium Zinc Oxide, IWO thin film: Indium Tungsten Oxide, AZO thin film: Aluminium-doped Zinc Oxide, BZO thin film: Boron-doped Zinc Oxide, GZO: Gallium-doped Zinc Oxide, IGZO: Indium Gallium Zinc Oxide. In this embodiment, the IWO thin film is preferably used. The IWO thin film is deposited on the electron transport layer by magnetron sputtering and filled into the air gaps generated by P2 laser etching. Subsequently, P3 laser etching is performed to remove the top conductive layer, hole transport layer, perovskite layer, and electron transport layer of adjacent cells in the cell wafer, leaving the bottom conductive layer, thereby achieving the separation effect.

[0068] Subsequently, P4 laser trimming is performed on the cell wafer to remove the top conductive layer, hole transport layer, perovskite layer, and electron transport layer on both sides of the cell wafer, leaving the bottom conductive layer. The trimming width is 1 mm. At this time, the bottom conductive layer is regarded as the positive and negative electrodes in the perovskite cell wafer electrodes respectively.

[0069] Step B: Detect and sort the perovskite cell wafers. The detection items include electrical property detection and quality detection. Reject the products that fail in quality detection and electrical property detection, and sort out the perovskite cell wafers that pass the quality detection and electrical property detection and have consistent electrical performance.

[0070] Step C: Connect 5 perovskite cells with a size of 20 cm × 20 cm in series. When connecting in series, the cell wafers are arranged in a row, and each piece should be aligned vertically and closely connected horizontally with as few gaps as possible.

[0071] Step D: Connect 5 groups of serially connected perovskite cells in parallel. When connecting in parallel, each row should be aligned horizontally and closely connected vertically with as few gaps as possible. Finally, a perovskite cell group with a size of 100 cm × 100 cm is formed.

[0072] Cover the polar position of the bottom conductive layer cut by P4 with a polymer film embedded with a copper mesh (copper wire composite film) in SmartWire technology. The principle of SmartWire technology is that the function of the main grid in the battery manufacturing process is replaced by metal wires in the module manufacturing process. The metal wires are embedded in the adhesive layer on the surface of the polymer film at a working temperature of 90-110°C. During the lamination of the module, a direct ohmic contact is formed with the conductive surface (fine grid, ITO and other conductive films, etc.) of the battery cell.

[0073] Step E: Lay the glass, EVA film, perovskite battery pack, EVA film, and backsheet in sequence from top to bottom. Align each layer during laying to be horizontal and vertical. At the same time, the sizes of the glass, EVA film, and backsheet are the same and larger than the size of the perovskite battery pack so that the perovskite battery pack is wrapped inside. The perovskite battery pack is located at the center of the glass, EVA film, and backsheet, and the glass, EVA film, and backsheet each extend at least 5 mm beyond the four edges of the perovskite battery pack. Among them, the thickness of the glass is 2 mm, the thickness of the battery cell is 200 μm, the thickness of the EVA film is 0.5 mm, and the material of the EVA film is thermoplastic polyolefin self-adhesive film (TPO) or ethylene-vinyl acetate copolymer (EVA). The thickness of the backsheet is 2 mm, and the material of the backsheet is glass.

[0074] Step F: Place the laid perovskite battery module into a laminator and evacuate the air inside the module by vacuum pumping. The vacuum pumping time is 100 s, and the vacuum state is -98 Kpa. Then gradually apply pressure. First, increase the pressure to -70 Kpa in 5 s, then increase the pressure to -50 Kpa in the following 5 s, and then heat until the lamination temperature of 250° is reached. This temperature is also the alloying temperature of the copper wire composite film. At the same time, increase the pressure to -30 Kpa. After the temperature and pressure are reached, perform lamination. The lamination time is 2000 s. After the lamination is completed, the copper wire composite film is alloyed with the battery cell.

[0075] Step G: After lamination, cut off the burrs formed by the outward extension and solidification of the EVA film due to melting and pressure during lamination. At this time, the perovskite battery pack is completely wrapped between the glass and the backsheet. Step H: Apply a positive or negative bias voltage to the solar cell using a regulated power supply, and then observe the infrared thermal image to determine whether there are defects such as hidden cracks and poor soldering in the battery cell. Step I: Install a frame on the perovskite battery module. Fill the gap between the frame and the perovskite battery module with resin, and connect the frames with corner keys to further seal the battery module to extend the service life of the battery. Step J: Weld a junction box at the back lead of the perovskite battery module to facilitate the electrical connection between the perovskite battery module and other devices or batteries. Step K: Apply a voltage between the electrode lead and the frame of the perovskite battery module to test the voltage resistance and insulation strength of the perovskite battery module. Step M: Calibrate the output power of the perovskite battery module, test its output characteristics, and determine the quality grade of the module.

[0076] Example 5, a method for producing a square-meter-level perovskite solar cell module, comprising the following steps: Step A: fabricate a top-transparent perovskite solar cell with a size of 10 cm × 10 cm, using a silicon wafer as the substrate, and then sequentially deposit a bottom conductive layer, a hole transport layer (HTL), a perovskite layer (PVK), an electron transport layer (ETL), and a top conductive layer on the silicon wafer substrate to form a perovskite solar cell chip.

[0077] The bottom conductive layer is a metal electrode, and the metal electrode is deposited on the ceramic substrate by magnetron sputtering or evaporation process. The metal electrode is one of molybdenum Mo, platinum Pt, gold Au, aluminum Al, antimony Ti, niobium Ni, copper Cu, and silver Ag. In this example, molybdenum Mo is preferably used. Subsequently, P1 laser etching is carried out. After the deposition of the metal electrode and before the deposition of the charge transport layer, laser etching is carried out to form independent strip-shaped conductive electrodes.

[0078] The hole transport layer is deposited on the bottom conductive layer by a coating (PVD) process, the perovskite layer is deposited on the hole transport layer by a coating printing or coating (PVD) process, and the electron transport layer is deposited on the perovskite layer by an RPD ion plating process. Subsequently, P2 laser etching is carried out. After the deposition of the electron transport layer and before the deposition of the top conductive layer, laser etching is carried out to remove the hole transport layer, the perovskite layer, and the electron transport layer, leaving the bottom conductive layer to form an empty gap. When the top conductive layer is deposited, the metal will fill this empty gap, thereby connecting the top conductive layer of one cell to the bottom conductive layer of the next cell to form a series connection inside the cell chip.

[0079] The top conductive layer is a TCO layer (transparent conductive oxide layer), specifically a transparent conductive thin film. The bottom conductive layer is selected from one of the following transparent conductive thin films; ITO thin film: indium tin oxide (Indium Tin Oxide), IZO thin film: indium zinc oxide (Indium Zinc Oxide), IWO thin film: indium tungsten oxide (Indium Tungsten Oxide), AZO thin film: aluminum-doped zinc oxide (Aluminium-doped Zinc Oxide), BZO thin film: boron-doped zinc oxide (Boron-doped Zinc Oxide), GZO: gallium-doped zinc oxide (Gallium-doped Zinc Oxide), IGZO: indium gallium zinc oxide (Indium Gallium Zinc Oxide). In this example, the IWO thin film is preferably used. The IWO thin film is deposited on the electron transport layer by magnetron sputtering and fills the empty gap generated by P2 laser etching. Subsequently, P3 laser etching is carried out to remove the top conductive layer, the hole transport layer, the perovskite layer, and the electron transport layer of adjacent cells in the cell chip, leaving the bottom conductive layer to achieve a separation effect.

[0080] Subsequently, P4 laser trimming is performed on the solar cells to remove the top conductive layer, hole transport layer, perovskite layer, and electron transport layer on both sides of the solar cells, leaving the bottom conductive layer. The trimming width is 1 mm to 1.5 mm. At this time, the bottom conductive layer is regarded as the positive and negative electrodes in the perovskite solar cell electrodes respectively.

[0081] Step B: Detect and sort the perovskite solar cells. The detection items include electrical property detection and quality detection. Reject the products that fail in quality detection and electrical property detection, and sort out the perovskite solar cells that pass the quality detection and electrical property detection and have consistent electrical performance.

[0082] Step C: Connect 20 perovskite solar cells with a size of 10 cm×10 cm in series. When connecting in series, the solar cells are arranged in a row, and each piece should be aligned vertically and closely connected horizontally with as few gaps as possible. Connect the adjacent positive and negative electrodes of the solar cells through conductive tape.

[0083] Step D: Connect 20 series-connected groups of perovskite solar cells in parallel. When connecting in parallel, each row should be aligned horizontally and closely connected vertically with as few gaps as possible. Connect the same-level sides on both sides of the series-connected groups of perovskite solar cells through conductive tape. Finally, a perovskite solar cell module with a size of 200 cm×200 cm is formed.

[0084] Step E: Lay the glass, EVA film, perovskite solar cell module, EVA film, and backsheet in sequence from top to bottom. When laying, each layer should be aligned to be horizontal and vertical. At the same time, the sizes of the glass, EVA film, and backsheet are the same and larger than the size of the perovskite solar cell module so that the perovskite solar cell module is wrapped inside. The perovskite solar cell module is located at the center of the glass, EVA film, and backsheet, and the glass, EVA film, and backsheet each extend at least 5 mm at the four edges of the perovskite solar cell module. Among them, the thickness of the glass is 2 mm, the thickness of the solar cell is 200 μm, the thickness of the EVA film is 0.5 mm, and the material of the EVA film is thermoplastic polyolefin self-adhesive film (TPO) or ethylene-vinyl acetate copolymer (EVA). The thickness of the backsheet is 2 mm, and the material of the backsheet is glass.

[0085] Step F: Place the laid perovskite solar cell module into a laminator and evacuate the air inside the module. The evacuation time is 100 s, and the vacuum state is -98 Kpa. Then gradually pressurize, first pressurize to -70 Kpa in 5 s, then pressurize to -50 Kpa in the following 5 s, and then heat until the lamination temperature reaches 100°, while pressurizing to -30 Kpa. After the temperature and pressure reach the required values, perform lamination, and the lamination time is 2000 s.

[0086] Step G: After lamination, trim the burrs formed by the outward extension and curing of the adhesive film due to melting and pressure during lamination. At this time, the perovskite battery pack is completely wrapped between the glass and the backplane. Step H: Apply a positive or negative bias voltage to the solar cell using a regulated power supply, and then observe the infrared thermal image to determine whether there are defects such as hidden cracks and poor soldering in the cell. Step I: Install a frame on the perovskite battery module. Fill the gap between the frame and the perovskite battery module with resin, and connect the frames with corner keys to further seal the battery module and extend the service life of the battery. Step J: Weld a junction box at the back lead of the perovskite battery module to facilitate the electrical connection between the perovskite battery module and other devices or batteries. Step K: Apply a voltage between the electrode leads and the frame of the perovskite battery module to test the voltage resistance and insulation strength of the perovskite battery module. Step M: Calibrate the output power of the perovskite battery module, test its output characteristics, and determine the quality grade of the module.

[0087] The electrical properties of the cells produced by the above embodiments are as follows: Taking the splicing of a single cell with dimensions of 105 mm × 210 mm as an example, with a side length of 210 mm, first in series and then in parallel. The structure is shown in Figure 2 . The area of a single sub-cell is 6 × 210 mm, Voc = 1 V, Jsc = 25 mA / cm 2 , Jsc = 315 mA, FF = 80%, PCE = 20%; the total voltage of the 105 mm × 210 mm cell is 17.5 V, the total current is 0.315 A, and the total power generation is 4.41 W. For a 0.6 × 1.2 m 2 module, the total voltage is 105 V, the total current is 1.89 A, and the total power generation is 158.76 W.

[0088] Taking the splicing of a single cell with dimensions of 105 × 210 mm as an example, with a side length of 105 mm, first in series and then in parallel. The structure is shown in Figure 3 . The area of a single sub-cell is 6 × 210 mm, Voc = 1 V, Jsc = 25 mA / cm 2 , Jsc = 315 mA, FF = 80%, PCE = 20%. For the 105 × 210 mm cell, the total voltage is 35 V, the total current is 0.1575 A, and the total power generation is 4.41 W. For a 0.6 × 1.2 m 2 module, the total voltage is 210 V, the total current is 0.945 A, and the total power generation is 158.76 W.

[0089] When directly coating a 0.6 × 1.2 device, the working area is 0.72 m 2 . When using the direct method to prepare a perovskite solar cell at the square meter level, assuming a photoelectric conversion efficiency of 15%, the power generation of the entire module is 0.72 × 0.15 × 10000 W / m2 = 108 W. Therefore, through the splicing scheme, the total power generation can be increased by 1.47 times under the same area, and relatively excellent stability can be achieved.

Claims

1. A method for producing square-meter perovskite battery components, characterized in that: It includes the following steps: Step A: Select a thin rigid material with a size of 5cm×5cm to 35cm×35cm as a substrate, and then prepare a bottom conductive layer, a hole transport layer, a perovskite layer, an electron transport layer and a top conductive layer on the substrate in sequence to form a perovskite cell, and then trim the perovskite cell. When trimming, the top conductive layer, the electron transport layer, the perovskite layer and the hole transport layer are respectively cut off on both sides of the perovskite cell, and the bottom conductive layers exposed on both sides are respectively regarded as the positive and negative electrodes in the perovskite cell electrode; Step B: Testing and sorting the perovskite cells, including electrical characteristics testing and quality testing, removing unqualified products in quality testing and electrical characteristics testing, and sorting out the perovskite cells that have passed the quality testing and electrical characteristics testing and have consistent electrical performance; Step C: connecting a plurality of perovskite cells in series, with the positive and negative electrodes of adjacent perovskite cells adjacent to each other during the series connection, and then electrically connecting the positive and negative electrodes of adjacent perovskite cells in sequence to form a perovskite cell series group; Step D: connecting a plurality of perovskite battery series groups in parallel, with adjacent perovskite battery series groups at the same level adjacent to each other on both sides during the parallel connection, and then sequentially electrically connecting adjacent perovskite battery series groups at the same level to form a perovskite battery group; Step E: Lay the glass, film, perovskite battery pack, film, and backplane in order from top to bottom. Align each layer during laying to ensure horizontal and vertical alignment. At the same time, the sizes of the glass, film, and backplane are consistent and larger than the size of the perovskite battery pack so that the perovskite battery pack is wrapped inside. Step F: Place the laid perovskite battery assembly into a laminator, extract the air in the assembly by vacuuming, then heat and pressurize to melt the adhesive film, and bond the perovskite battery pack, glass and backplane together to form a perovskite battery assembly; Step G: After lamination is completed, the burrs formed by the film extending outward and solidifying due to the melting and pressure of the film during lamination are cut off.

2. The method for producing a square-meter perovskite battery assembly according to claim 1, characterized in that: Also includes a step C1 for replacing step C and a step D1 for replacing step D; Step C1: connecting a plurality of perovskite cells in parallel, with electrodes of adjacent perovskite cells at the same level adjacent to each other during the parallel connection, and then sequentially electrically connecting adjacent perovskite cells at the same level to form a perovskite cell parallel group; Step D1: connect several parallel groups of perovskite batteries in series, with the positive and negative sides of adjacent parallel groups of perovskite batteries adjacent to each other during the series connection, and then electrically connect the positive and negative poles of adjacent series groups of perovskite batteries in turn to form a perovskite battery group.

3. The method for producing a square-meter perovskite battery assembly according to claim 1, characterized in that: In step C, when the perovskite cells are connected in series, the cells are arranged in a row, and each cell should be aligned up and down and closely connected left and right; in step D, when the perovskite cell series groups are connected in parallel, each row should be aligned left and right and closely connected up and down.

4. The method for producing a square-meter perovskite battery assembly according to claim 2, characterized in that: In step C1, when the perovskite cells are connected in parallel, the cells are arranged in a row, and each cell should be aligned left and right and closely connected up and down; in step D1, when the perovskite cells are connected in parallel in series, each column should be aligned up and down and closely connected left and right.

5. The method for producing square-meter perovskite battery components according to claim 1, characterized in that: In step A, when the perovskite cell is trimmed, the trimming width is no greater than 1.5 mm.

6. The method for producing a square-meter perovskite battery assembly according to claim 1, characterized in that: In step E, the perovskite battery pack is located at the center of the glass, film, and backplane.

7. The method for producing a square-meter perovskite battery assembly according to claim 1 or 2, characterized in that: In step C, step D or step C1, step D1, the electrical connection includes soldering and alloying of solder strips, alloying of solder strips after lamination, alloying of solder strips after adhesive lamination, alloying of copper wire composite film after lamination, and bonding of conductive tape.

8. The method for producing a square-meter perovskite battery assembly according to claim 1, characterized in that: In step F, the lamination temperature is between 115° and 150°, and the lamination pressure is divided into a pressurization stage and a lamination stage. The pressurization stage gradually increases the pressure from vacuum to -70kPa ~ -20kPa, and the lamination stage is performed at -70kPa ~ -20kPa. The lamination time is determined according to the area of ​​the perovskite battery pack.

9. The method for producing a square-meter perovskite battery assembly according to claim 1 or 2, characterized in that: The gap between adjacent perovskite cells does not exceed 3mm.

10. The method for producing a square-meter perovskite battery assembly according to claim 1, characterized in that: Also includes the following steps: Step H: Use a voltage-stabilized power supply to apply a positive bias or a negative bias to the solar cell, and then observe the infrared thermal image to determine whether the cell has defects such as hidden cracks and cold solder joints; Step I: Add a frame to the perovskite battery assembly, and fill the gap between the frame and the perovskite battery assembly with resin; Step J: Welding a junction box at the back lead of the perovskite battery module to facilitate the electrical connection between the perovskite battery module and other devices or batteries; Step K: applying voltage between the electrode lead and the frame of the perovskite battery assembly to test the pressure resistance and insulation strength of the perovskite battery assembly; Step M: Calibrate the output power of the perovskite battery module, test its output characteristics, and determine the quality level of the module.

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