Method for constructing silicon carbide part and silicon carbide part

Abstract

The invention relates to a method for constructing a silicon carbide part and the silicon carbide part. The method comprises the steps that a first silicon carbide part and a second silicon carbide part are formed through a normal-pressure sintering process, at least one of the first silicon carbide part and the second silicon carbide part is provided with a pit, and the section of the pit is in an irregular shape; arranging a silicon carbide adhesive on at least one of the first surface of the first silicon carbide part and the second surface of the second silicon carbide part; the first silicon carbide part and the second silicon carbide part are connected in an aligned mode through the first surface and the second surface and machined to form a silicon carbide piece, the silicon carbide piece is provided with a cavity, and the section of the cavity is in an irregular shape corresponding to the section of the recess. The problem that a complex hollow structure cannot be formed through a traditional process is solved, meanwhile, the defect of insufficient density of a 3D printing process is overcome, and the heat conductivity and mechanical stability of the component can be remarkably improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor manufacturing, and particularly to a method for constructing a silicon carbide component and a silicon carbide component. Background Art

[0002] Atmospheric pressure sintered silicon carbide, as a high-performance material, is widely used in the semiconductor field, especially in key components such as workbenches, vacuum chucks, and carrier plates. These components need to have excellent thermal stability, corrosion resistance, and low free metal ion content to meet the demanding requirements in the semiconductor manufacturing process. However, with the complexity of semiconductor processes, many supporting components exhibit complex hollow structure characteristics, which pose higher challenges to the forming and processing of materials.

[0003] In related technologies, the manufacturing of complex hollow structures can be achieved through 3D printing technology. However, due to the low density of the silicon carbide components formed by 3D printing technology, the thermal conductivity and thermal stability cannot be compared with those of traditional atmospheric pressure sintering processes. Therefore, how to maintain the excellent performance of atmospheric pressure sintered silicon carbide and achieve efficient forming and processing of complex cross-section hollow structures has become a technical problem to be urgently solved. Summary of the Invention

[0004] In order to provide a silicon carbide component that maintains the excellent performance of atmospheric pressure sintered silicon carbide and has a complex cross-section hollow structure, the present application provides a method for constructing a silicon carbide component and a silicon carbide component.

[0005] On the one hand, a method for constructing a silicon carbide component is provided, adopting the following technical solution: A method for constructing a silicon carbide component includes the following steps: Using an atmospheric pressure sintering process to form a first silicon carbide part and a second silicon carbide part, at least one of the first silicon carbide part and the second silicon carbide part has a depression, and the cross-section of the depression is an irregular shape; Providing a silicon carbide adhesive on at least one of the first surface of the first silicon carbide part and the second surface of the second silicon carbide part; Aligning and connecting the first silicon carbide part and the second silicon carbide part through the first surface and the second surface, and processing to form a silicon carbide component, the silicon carbide component having a cavity, the cross-section of the cavity being an irregular shape corresponding to the cross-section of the depression.

[0006] By adopting the above technical solution, through split-type atmospheric pressure sintering combined with adhesive alignment connection, the problem that the traditional process cannot form complex hollow structures is solved, and at the same time, the density deficiency defect of the 3D printing process is avoided, and the thermal conductivity and mechanical stability of the component can be significantly improved.

[0007] Optionally, an atmospheric pressure sintering process is used to form the first silicon carbide part and the second silicon carbide part, and this step includes: According to the structure of the silicon carbide part, it is decomposed into a first part and a second part, and a first forming mold corresponding to the first part and a second forming mold corresponding to the second part are provided; Using silicon carbide micropowder, the first forming mold and the second forming mold, the first silicon carbide part and the second silicon carbide part are formed by an atmospheric pressure sintering process.

[0008] Adopting the above technical solution, through the split mold design, the precise forming of complex cross-sections is realized, the dimensional consistency of each component is improved, and the deformation risk caused by complex structure during sintering is reduced.

[0009] Optionally, a silicon carbide adhesive is provided on at least one of the first surface of the first silicon carbide part and the second surface of the second silicon carbide part, and this step includes: Providing a silicon carbide adhesive; Coating the silicon carbide adhesive on at least one of the first surface and the second surface to form an adhesive layer.

[0010] Adopting the above technical solution, through the uniform coating of the adhesive layer, the bonding strength of the bonding surface is enhanced, and at the same time, the precipitation of free metal ions is avoided, meeting the requirements for high cleanliness in the semiconductor field.

[0011] Optionally, the silicon carbide adhesive includes silicon carbide micropowder and polyacrylamide, wherein the mass ratio of the silicon carbide micropowder in the silicon carbide adhesive is 10% - 60%.

[0012] Adopting the above technical solution, through the silicon carbide adhesive containing silicon carbide micropowder components, the bonded part and each component can form an integral structure in the subsequent process, thus ensuring the integrity and process strength of the silicon carbide part. At the same time, by optimizing the adhesive ratio, the thermal expansion coefficient matching degree between the adhesive layer and the matrix material can be improved, reducing the interfacial stress during high-temperature sintering and enhancing the thermal shock resistance of the bonding surface.

[0013] Optionally, the thickness of the adhesive layer is 0.1 - 1 mm; Or, the thickness of the adhesive layer is 0.3 - 0.5 mm.

[0014] Adopting the above technical solution, by controlling the thickness of the adhesive layer, it is possible to avoid shrinkage cracking of the adhesive due to excessive thickness or insufficient bonding strength due to too thin thickness, ensuring the denseness of the microstructure of the bonding surface.

[0015] Optionally, the first silicon carbide part and the second silicon carbide part are aligned and connected through the first surface and the second surface, and processed to form a silicon carbide part. This step includes: Align and connect the first silicon carbide part and the second silicon carbide part through the first surface and the second surface; Provide a sintering mold, and place the aligned and connected first silicon carbide part and second silicon carbide part into the sintering mold, and perform a first bonding and curing treatment at a first temperature; Place the first silicon carbide part and the second silicon carbide part after the first bonding and curing treatment into a sintering furnace, and perform a second bonding and curing treatment at a second temperature, where the second temperature is greater than the first temperature; Perform surface treatment and stress treatment on the joint between the first silicon carbide part and the second silicon carbide part to form a silicon carbide part.

[0016] Adopting the above technical solution, through staged bonding and curing (pre-bonding + high-temperature sintering), the interfacial bonding strength is gradually increased, and at the same time, the micro-defects caused by one-time high-temperature treatment are reduced.

[0017] Optionally, apply pressure to the aligned and connected first silicon carbide part and second silicon carbide part at a first temperature to perform a first bonding and curing treatment; or, place the first silicon carbide part and the second silicon carbide part after the first bonding and curing treatment into a sintering container, and move the sintering container into the sintering furnace through the moving mechanism of the sintering furnace, and perform a second bonding and curing treatment at a second temperature.

[0018] Adopting the above technical solution, the pre-curing effect is optimized through the synergistic action of pressure and temperature, or a smooth furnace entry is achieved through the moving mechanism, avoiding cracks generated on the bonding surface due to sudden heating.

[0019] Optionally, perform surface treatment on the joint between the first silicon carbide part and the second silicon carbide part through step-by-step machining; Or, eliminate the stress at the joint through heat treatment.

[0020] Adopting the above technical solution, through step-by-step machining (single cutting amount ≤ 0.1 mm) combined with three-coordinate detection, the defects on the joint surface are accurately removed; or the residual stress is eliminated through heat treatment to ensure the dimensional stability of the component under the high-temperature working conditions of the semiconductor.

[0021] On the other hand, a silicon carbide part is also provided, which is constructed according to the method for constructing the silicon carbide part, where the silicon carbide part has a cavity, and the cross-section of the cavity is an irregular shape.

[0022] With the above technical solution, through atmospheric pressure sintering and split bonding processes, it is ensured that the silicon carbide parts meet the stringent requirements of the semiconductor field for thermal conductivity, cleanliness, and dimensional accuracy.

[0023] Optionally, the silicon carbide parts are used in semiconductor equipment.

[0024] With the above technical solution, the silicon carbide parts have both a complex hollow structure and high density characteristics, and are suitable for key components such as vacuum chucks or carrier plates in semiconductor equipment that require high corrosion resistance and low metal contamination.

[0025] In summary, the present application includes at least one of the following beneficial technical effects: 1. By combining split-type atmospheric pressure sintering with adhesive alignment connection, the problem that the traditional process cannot form a complex hollow structure is solved, and at the same time, the defect of insufficient density in the 3D printing process is avoided, which can significantly improve the thermal conductivity and mechanical stability of the components; 2. Through the silicon carbide adhesive containing silicon carbide micropowder components, an integral structure can be formed between the bonding part and each component in the subsequent process, thus ensuring the integrity and process strength of the silicon carbide parts.

[0026] 3. By staged bonding and curing (pre-bonding + high-temperature sintering), the interfacial bonding strength is gradually improved, and at the same time, the microscopic defects caused by one-time high-temperature treatment are reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 is a schematic flow chart of the method for constructing silicon carbide parts in an embodiment of the present application; Figure 2 is Figure 1 the schematic flow chart of step S1 in Figure 3 is Figure 1 the schematic flow chart of step S2 in Figure 4 is Figure 1 the schematic flow chart of step S3 in Figure 5 is according to Figure 1 the schematic structural diagram of the first silicon carbide part formed by the method for constructing silicon carbide parts shown; Figure 6 is according to Figure 1 the schematic structural diagram of the second silicon carbide part formed by the method for constructing silicon carbide parts shown; Figure 7 is according to Figure 1 the schematic structural diagram of the silicon carbide part formed by the method for constructing silicon carbide parts shown; Figure 8 is Figure 7 the view from direction A in Figure 9 is a cross-sectional view along Figure 8 section line B-B in the middle.

[0028] Explanation of reference numerals: 500, the first silicon carbide part; 510, the depression; 520, the first surface; 600, the second silicon carbide part; 610, the second surface; 700, the silicon carbide part; 710, the cavity. Detailed implementation manners

[0029] The following combines Figure 1 - Figure 9 to further elaborate on this application in detail.

[0030] The embodiments of this application disclose a method for constructing a silicon carbide part, including the following steps: Using an atmospheric pressure sintering process to form a first silicon carbide part 500 and a second silicon carbide part 600, at least one of the first silicon carbide part 500 and the second silicon carbide part 600 has a depression 510, and the cross-section of the depression 510 is an irregular shape; Providing a silicon carbide adhesive on at least one of the first surface 520 of the first silicon carbide part 500 and the second surface 610 of the second silicon carbide part 600; Aligning and connecting the first silicon carbide part 500 and the second silicon carbide part 600 through the first surface 520 and the second surface 610, and processing to form a silicon carbide part 700, the silicon carbide part 700 having a cavity 710, and the cross-section of the cavity 710 being an irregular shape corresponding to the cross-section of the depression 510.

[0031] Referring to Figure 1 , the method for constructing a silicon carbide part includes the following steps: S1. Using an atmospheric pressure sintering process to form a first silicon carbide part 500 and a second silicon carbide part 600, at least one of the first silicon carbide part 500 and the second silicon carbide part 600 has a depression 510, and the cross-section of the depression 510 is an irregular shape.

[0032] S2. Providing a silicon carbide adhesive on at least one of the first surface 520 of the first silicon carbide part 500 and the second surface 610 of the second silicon carbide part 600.

[0033] S3. Aligning and connecting the first silicon carbide part 500 and the second silicon carbide part 600 through the first surface 520 and the second surface 610, and processing to form a silicon carbide part 700, the silicon carbide part 700 having a cavity 710, and the cross-section of the cavity 710 being an irregular shape corresponding to the cross-section of the depression 510.

[0034] Referring to Figure 2, in step S1, the first silicon carbide part 500 and the second silicon carbide part 600 are formed using an atmospheric pressure sintering process, and this step includes: S11. According to the structure of the silicon carbide part 700 with a process target, it is decomposed into a first part and a second part, and a first part forming die and a second part forming die are provided.

[0035] S12. Using silicon carbide micropowder and the first part forming die and the second part forming die, the first silicon carbide part 500 and the second silicon carbide part 600 are formed through an atmospheric pressure sintering process.

[0036] In step S11, according to the structure of the silicon carbide part 700 with a process target, it is decomposed into a first part and a second part, and a first part forming die and a second part forming die are provided. After decomposing the silicon carbide part 700 with a complex cross-section and hollow structure into a first part and a second part, it becomes possible to form a complex cross-section structure through an atmospheric pressure sintering process. Refer to Figures 7 to 9 Figure, the silicon carbide part 700 has a cavity 710, and the cavity 710 is a complex cross-section and hollow structure, that is to say, the cross-section of the cavity 710 is a complex irregular shape.

[0037] Here, the term "complex cross-section and hollow structure" means that its cross-sectional shape is not a single, regular geometric shape, but presents a changing, irregular or multi-featured form along at least one axis. The complexity of this structure can be reflected in one or more of the following aspects: 1. Diversity of cross-sectional shapes: At different cutting positions, the cross-sectional shape of the object changes significantly, such as changing from a circle to a square, or including discontinuous features such as protrusions and depressions.

[0038] 2. Complexity of internal cavities: The object contains multiple interconnected or independent cavities, channels or holes inside, rather than a single simple cavity. These internal structures may have different shapes, sizes and orientations.

[0039] 3. Complexity of external contours: The external contour of the object presents an irregular shape, which may include a combination of various geometric elements such as curves, inclined planes, steps, protrusions and grooves.

[0040] 4. Existence of internal features: The structure may contain features for strengthening, guiding or other functions inside, such as ribs, stiffeners, partitions, connecting columns, etc., further increasing the complexity of the structure.

[0041] This complex cross-section hollow structure is different from objects that only have simple geometric shapes (such as circles, rectangles, ellipses, etc.) and are hollow inside. Its complexity comes from its variable cross-sectional profile or the complex arrangement of internal cavities. For example, a hollow tube whose cross-sectional shape gradually transitions from a circle to a square along its length direction, or an object with multiple non-connected cavities inside, both belong to the complex cross-section hollow structure. In the semiconductor field, this structure is often used in components that require precise control of fluids, gases, or need to be lightweight but have high structural strength, such as vacuum suction cups, workbenches, etc. with complex cooling or gas flow channels.

[0042] The first forming die or the second forming die may include an upper and lower die and positioning pins. The upper and lower dies are made of high-precision steel dies, which have good heat conduction performance and wear resistance, and the surface is polished to reduce the demolding resistance. The positioning pins are used to accurately align the upper and lower dies, and can be made of stainless steel or ceramic materials, and the diameter range can be 2 - 5 mm. The upper and lower dies are fixedly connected by bolts, and the positioning pins are embedded inside the dies to ensure accurate alignment and stability during forming.

[0043] In step S12, using silicon carbide micropowder and the first forming die and the second forming die, the first silicon carbide part 500 and the second silicon carbide part 600 are formed through an atmospheric pressure sintering process.

[0044] The particle size of the silicon carbide micropowder is nanoscale. Refer to Figure 5 and Figure 6 , at least one of the first silicon carbide part 500 and the second silicon carbide part 600 has a depression 510 (in this embodiment, the first silicon carbide part 500 having the depression 510 is taken as an example), and the cross-section of the depression 510 is a complex irregular shape corresponding to the cross-section of the cavity 710 (also refer to Figure 9 ). In this way, when the first silicon carbide part 500 and the second silicon carbide part 600 are formed into one body in subsequent processes, the complex cross-section hollow structure required for the process target silicon carbide part 700 can be obtained.

[0045] Refer to Figure 3 , in step S2, a silicon carbide adhesive is provided on at least one of the first surface 520 of the first silicon carbide part 500 and the second surface 610 of the second silicon carbide part 600. This step includes: S21. Provide the silicon carbide adhesive.

[0046] S22. Set the silicon carbide adhesive on at least one of the first surface 520 of the first silicon carbide part 500 and the second surface 610 of the second silicon carbide part 600.

[0047] In step S21, a silicon carbide binder is provided. The silicon carbide binder may include silicon carbide micropowder and polyacrylamide, where the mass ratio of the silicon carbide micropowder may be 10% - 60%.

[0048] The silicon carbide binder can be prepared using a stirring device and a mixing container. The stirring device may include a mechanical stirrer and / or an ultrasonic stirrer for fully mixing the nanoscale silicon carbide micropowder with the polyacrylic amide. The mixing container can be made of stainless steel, which is corrosion-resistant and can prevent damage to the container caused by chemical reactions. The mechanical stirrer is usually driven by a motor with adjustable speed and is suitable for preliminary mixing; the ultrasonic stirrer promotes uniform dispersion of particles through high-frequency vibration and is particularly suitable for mixing nanoscale materials. Both are fixed to the mixing container by threaded connections to ensure no leakage during the mixing process.

[0049] By using the silicon carbide binder containing the silicon carbide micropowder component, an integral structure can be formed between the bonding part and the first silicon carbide part 500 and the second silicon carbide part 600 in subsequent processes, thereby ensuring the integrity and process strength of the silicon carbide part 700.

[0050] In step S22, the silicon carbide binder is provided on at least one of the first surface 520 of the first silicon carbide part 500 and the second surface 610 of the second silicon carbide part 600. Among them, the silicon carbide binder can be provided on both the first surface 520 and the second surface 610, or only on one of them.

[0051] The silicon carbide binder can be evenly applied on the first surface 520 and the second surface 610 to form a binder layer. The thickness of the binder layer can be 0.1 - 1 mm, preferably 0.3 - 0.5 mm, to balance the bonding strength and processing accuracy. A thinner bonding layer can reduce the thickness error and improve the accuracy of subsequent processing; at the same time, an appropriate thickness of the bonding layer can ensure a sufficient bonding area, thereby enhancing the bonding strength.

[0052] Refer to Figure 4 , in step S3, the first silicon carbide part 500 and the second silicon carbide part 600 are aligned and connected through the first surface 520 and the second surface 610, and processed to form a silicon carbide part 700. This step includes: S31. Align and connect the first silicon carbide part 500 and the second silicon carbide part 600 through the first surface 520 and the second surface 610.

[0053] S32. Provide a sintering mold, place the first silicon carbide part 500 and the second silicon carbide part 600 after alignment connection into the sintering mold, and perform the first bonding and curing treatment at the first temperature.

[0054] S33. Place the first silicon carbide part 500 and the second silicon carbide part 600 after the first bonding and curing treatment into a sintering furnace, and perform the second bonding and curing treatment at the second temperature, where the second temperature is greater than the first temperature.

[0055] S34. Perform surface treatment and stress treatment on the joint between the first silicon carbide part 500 and the second silicon carbide part 600 to form a silicon carbide part 700.

[0056] In step S31, align and connect the first silicon carbide part 500 and the second silicon carbide part 600 through the first surface 520 and the second surface 610.

[0057] In step 32, provide a sintering mold, place the first silicon carbide part 500 and the second silicon carbide part 600 after alignment connection into the sintering mold, and perform the first bonding and curing treatment at the first temperature. Among them, the sintering mold is designed according to the structure of the silicon carbide part 700 with the process target.

[0058] During the first bonding and curing treatment, a forming device can be used to apply a first temperature pressure to the first silicon carbide part 500 and the second silicon carbide part 600 after alignment connection at the first temperature. The first temperature can be 200 - 300 °C, and the applied pressure can be 5 - 20 MPa. The pressure application can be achieved through a hydraulic cylinder or a pneumatic cylinder. The hydraulic cylinder is suitable for uniform pressurization of a large area, while the pneumatic cylinder is suitable for local pressurization. The appropriate device can be selected according to actual needs.

[0059] In step S33, place the first silicon carbide part 500 and the second silicon carbide part 600 after the first bonding and curing treatment into a sintering furnace, and perform the second bonding and curing treatment at the second temperature, where the second temperature is greater than the first temperature.

[0060] Among them, the first silicon carbide part 500 and the second silicon carbide part 600 after the first bonding and curing treatment can be placed into a sintering container (such as a crucible), and the sintering container can be moved into the sintering furnace through the moving mechanism of the sintering furnace, and the second bonding and curing treatment is performed at the second temperature. The second temperature can be 1800 - 2200 °C.

[0061] During the second bonding and curing treatment process, a stable high temperature is maintained in the sintering furnace so that the crystal structure of the silicon carbide material is fully optimized and the bonding strength reaches a better state.

[0062] In step S34, surface treatment and stress treatment are performed on the joint between the first silicon carbide part 500 and the second silicon carbide part 600 to form a silicon carbide component 700.

[0063] Among them, equipment such as a numerical control grinding machine and a machining center can be used to perform surface treatment on the joint between the first silicon carbide part 500 and the second silicon carbide part 600 to eliminate minute flaws on the surface of the joint. The machining process can adopt step-by-step machining. After each 0.1 mm of depth of cut, the dimensions are confirmed by a coordinate measuring machine. And the stress generated at the joint due to bonding and curing treatment can be eliminated by heat treatment to form the silicon carbide component 700 with the process target.

[0064] The implementation principle of a method for constructing a silicon carbide component according to an embodiment of the present application is as follows: 1. The silicon carbide component 700 with a complex cross-section hollow structure is split into a first silicon carbide part 500 and the second silicon carbide part 600 and constructed by an atmospheric pressure sintering process, so that a complex structure can be formed while ensuring the process strength of the silicon carbide component.

[0065] 2. A binder containing a silicon carbide fine powder component is used for bonding, so that the bonded part forms an integral structure with the first silicon carbide part 500 and the second silicon carbide part 600, thereby ensuring the integrity and process strength of the silicon carbide component 700.

[0066] 3. Distributed bonding and curing treatment are adopted to ensure the bonding strength and stability.

[0067] An embodiment of the present application also discloses a silicon carbide component. Refer to Figures 7 to 9 , the silicon carbide component 700 is constructed according to the method for constructing a silicon carbide component, wherein the silicon carbide component 700 has a cavity 710, and the cross-section of the cavity 710 is an irregular shape.

[0068] The implementation principle of a silicon carbide component according to an embodiment of the present application is: by being constructed according to the method for constructing a silicon carbide component, a silicon carbide component that maintains the process characteristics of atmospheric pressure sintered silicon carbide and has a complex cross-section hollow structure can be obtained.

[0069] The above are all preferred embodiments of the present application. The protection scope of the present application is not limited thereby. Therefore, all equivalent changes made according to the structure, shape, and principle of the present application should be covered within the protection scope of the present application.

Claims

1. A method for constructing a silicon carbide part, characterized in that: The following steps are involved: A first silicon carbide portion (500) and a second silicon carbide portion (600) are formed using a normal pressure sintering process, wherein at least one of the first silicon carbide portion (500) and the second silicon carbide portion (600) has a recess (510), and a cross section of the recess (510) is an irregular shape; Disposing a silicon carbide adhesive on at least one of a first surface (520) of the first silicon carbide portion (500) and a second surface (610) of the second silicon carbide portion (600); The first silicon carbide portion (500) and the second silicon carbide portion (600) are aligned and connected via the first surface (520) and the second surface (610), and processed to form a silicon carbide component (700), wherein the silicon carbide component (700) has a cavity (710), and the cross section of the cavity (710) is an irregular shape corresponding to the cross section of the recess (510).

2. The method for constructing a silicon carbide part according to claim 1, characterized in that: The first silicon carbide portion (500) and the second silicon carbide portion (600) are formed using a normal pressure sintering process, the step comprising: According to the structure of the silicon carbide part (700), the silicon carbide part (700) is decomposed into a first part and a second part, and a first molding die corresponding to the first part and a second molding die corresponding to the second part are provided; Using silicon carbide powder and the first molding die and the second molding die, a first silicon carbide part (500) and a second silicon carbide part (600) are formed by a normal pressure sintering process.

3. The method for constructing a silicon carbide part according to claim 1, characterized in that: Disposing a silicon carbide adhesive on at least one of a first surface (520) of the first silicon carbide part (500) and a second surface (610) of the second silicon carbide part (600), the step comprising: Provide silicon carbide adhesive; The silicon carbide adhesive is applied on at least one of the first surface (520) and the second surface (610) to form an adhesive layer.

4. The method for constructing a silicon carbide part according to claim 3, characterized in that: The silicon carbide adhesive comprises silicon carbide powder and polyacrylamide, wherein the silicon carbide powder accounts for 10% to 60% by mass of the silicon carbide adhesive.

5. The method for constructing a silicon carbide part according to claim 3, characterized in that: The thickness of the adhesive layer is 0.1-1 mm; Alternatively, the thickness of the adhesive layer is 0.3-0.5 mm.

6. The method for constructing a silicon carbide part according to claim 1, characterized in that: The first silicon carbide portion (500) and the second silicon carbide portion (600) are aligned and connected via the first surface (520) and the second surface (610), and processed to form a silicon carbide part (700), the step comprising: The first silicon carbide portion (500) and the second silicon carbide portion (600) are aligned and connected via the first surface (520) and the second surface (610); Providing a sintering mold, placing the first silicon carbide part (500) and the second silicon carbide part (600) after alignment and connection into the sintering mold, and performing a first bonding and curing process at a first temperature; placing the first silicon carbide part (500) and the second silicon carbide part (600) after the first bonding and curing treatment into a sintering furnace, and performing a second bonding and curing treatment at a second temperature, wherein the second temperature is greater than the first temperature; A bonding portion between the first silicon carbide portion (500) and the second silicon carbide portion (600) is subjected to surface treatment and stress treatment to form a silicon carbide part (700).

7. The method for constructing a silicon carbide part according to claim 6, characterized in that: Applying pressure at a first temperature to the first silicon carbide part (500) and the second silicon carbide part (600) that have been aligned and connected to perform a first bonding and curing process; Alternatively, the first silicon carbide part (500) and the second silicon carbide part (600) after the first bonding and curing treatment are placed in a sintering container, and the sintering container is moved into the sintering furnace by a moving mechanism of the sintering furnace, and a second bonding and curing treatment is performed at a second temperature.

8. The method for constructing a silicon carbide part according to claim 6, characterized in that: Performing surface treatment on a joint between the first silicon carbide part (500) and the second silicon carbide part (600) by step-by-step processing; Alternatively, the stress at the joint is relieved by heat treatment.

9. A silicon carbide part, characterized in that: The method for constructing a silicon carbide part according to any one of claims 1 to 8 is carried out, wherein the silicon carbide part (700) has a cavity (710), and the cross-section of the cavity (710) is an irregular shape.

10. The silicon carbide component according to claim 9, characterized in that: For use in semiconductor equipment.

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