Method and apparatus for gas distribution

By adopting a gas distribution device with a 3D lattice structure with an internal helical structure in the gas distribution plate, the problems of uneven gas distribution and high internal wall cleaning frequency in the prior art are solved, and more efficient gas distribution and lower chemical usage are achieved.

CN120158726APending Publication Date: 2025-06-17ASM IP HLDG BV
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Patent Information

Application Number
CN202411823555.6
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-12-15
Filing Date
2024-12-12
Publication Date
2025-06-17

AI Technical Summary

Technical Problem

In semiconductor manufacturing, it is difficult to efficiently transport precursors and reactants at the same time, and the internal walls are cleaned at a high frequency and many chemicals are used.

Method used

A gas distribution device with a 3D lattice structure with an internal helical structure, including two isolated air-filled chambers and a continuous internal wall, distributes the gas into a plurality of continuous interconnecting channels, and improves the gas distribution efficiency through the wound channel structure.

Benefits of technology

By reducing the surface area of ​​the inner wall, the amount of chemical substances used and the cleaning frequency of the inner wall are reduced, and the efficiency and stability of gas distribution are improved.

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Abstract

Various embodiments of the present technology may provide a 3D lattice structure including a first plenum chamber having a first volume and a second plenum chamber having a second volume isolated from the first plenum chamber. The continuous inner wall separates the first plenum from the second plenum, and the outer surface partially surrounds the first and second plenums.
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Description

Technical Field

[0001] The present disclosure generally relates to methods and apparatuses for gas distribution. More specifically, the present disclosure relates to a gas distribution apparatus having an internal gyroid structure. Background Art

[0002] Some reaction chambers used in semiconductor manufacturing utilize a gas distribution plate (sometimes referred to as a showerhead) to deliver various gases such as precursors and reactants to a substrate and form a film on the substrate. Conventional gas distribution plates sequentially provide precursors and reactants through a common set of through-holes in the gas distribution plate. In some cases, it may be advantageous to deliver precursors and reactants to the reaction chamber through separate plenum chambers. Summary of the Invention

[0003] Various embodiments of the present technology can provide a 3D lattice structure that includes a first plenum chamber having a first volume and a second plenum chamber having a second volume that is isolated from the first plenum chamber. A continuous internal wall separates the first plenum chamber from the second plenum chamber, and an outer surface partially encloses the first and second plenum chambers.

[0004] According to one aspect, an apparatus includes: a 3D lattice structure including: a first plenum chamber having a first volume; a second plenum chamber having a second volume that is isolated from the first plenum chamber; and a continuous internal wall separating the first plenum chamber from the second plenum chamber; a first inlet coupled to the first plenum chamber; a second inlet coupled to the second plenum chamber; and an outer surface that partially encloses the first and second plenum chambers.

[0005] In one embodiment, the lattice structure is a triply periodic minimal surface structure.

[0006] In one embodiment, the first and second volumes are equal.

[0007] In one embodiment, the first and second volumes are not equal.

[0008] In one embodiment, the first plenum chamber includes a first plurality of continuously interconnected channels.

[0009] In one embodiment, the first inlet is coupled to a first channel of the first plurality of channels, and the first channel has a first width.

[0010] In one embodiment, a second channel of the first plurality of channels has a second width that is greater than the first width.

[0011] In one embodiment, the second plenum chamber includes a second plurality of continuously interconnected channels.

[0012] In one embodiment, the second inlet is coupled to a first channel of the second plurality of channels, and the first channel has a first width.

[0013] In one embodiment, a second channel of the second plurality of channels has a second width greater than the first width.

[0014] In one embodiment, the first plurality of channels and the second plurality of channels are intertwined.

[0015] In one embodiment, the first plurality of channels are coupled to a first inlet.

[0016] In one embodiment, the second plurality of channels are coupled to a second inlet.

[0017] In one embodiment, the first plurality of channels are non-linear.

[0018] According to another aspect, an apparatus includes: a lattice structure including: a first inflatable chamber having a first volume and including a first plurality of continuously interconnected channels; a second inflatable chamber having a second volume and including a second plurality of continuously interconnected channels; wherein the first plurality of channels and the second plurality of channels are intertwined and the first plurality of channels and the second plurality of channels are separated from each other by a common interior wall; a first inlet coupled to the first inflatable chamber; a second inlet coupled to the second inflatable chamber; and an outer surface partially surrounding the first and second inflatable chambers.

[0019] In one embodiment, the first inlet is coupled to a first channel of the first plurality of channels and the first channel has a first width.

[0020] In one embodiment, a second channel of the first plurality of channels has a second width greater than the first width.

[0021] In one embodiment, the second inlet is coupled to a first channel of the second plurality of channels and the first channel has a first width.

[0022] In yet another aspect, a system includes: a reaction chamber including: a susceptor configured to support a substrate; and a gas distribution system disposed above the susceptor and including: a first inflatable chamber including a first plurality of channels, wherein the first plurality of channels include a first channel having a first width and a second channel having a second width, wherein the second width is greater than the first width; and a second inflatable chamber isolated from the first inflatable chamber and including a second plurality of channels, wherein the second plurality of channels include a third channel having a third width and a fourth channel having a fourth width, wherein the fourth width is greater than the third width; a first inlet coupled to the first channel; a second inlet coupled to the third channel; a first container configured to contain a precursor, wherein the first container is coupled to the first inlet; and a second container configured to contain a reactant, wherein the first container is coupled to the second inlet.

[0023] In one embodiment, a first plurality of channels are wound together with a second plurality of channels, and the first plurality of channels and the second plurality of channels are separated from each other by a common internal wall. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] A more complete understanding of the present technology can be obtained by reference to the detailed description when considered in conjunction with the following illustrative drawings. In the following drawings, like reference numerals refer to like elements and steps throughout the drawings.

[0025] Figure 1 A system according to an embodiment of the present technology is representatively shown;

[0026] Figure 2 is a perspective view of a helix according to an embodiment of the present technology;

[0027] Figure 3 is a top view of a helix according to an embodiment of the present technology;

[0028] Figure 4 is a first side view of a helix according to an embodiment of the present technology;

[0029] Figure 5 is a second side view according to an embodiment of the present technology;

[0030] Figure 6 A reverse inflation chamber of a helix according to an embodiment of the present technology is representatively shown;

[0031] Figure 7 A unit cell of a helix according to an embodiment of the present technology is representatively shown;

[0032] Figure 8 A network of connected helix units according to an embodiment of the present technology is representatively shown;

[0033] Figure 9 A portion of a helix network according to an embodiment of the present technology is representatively shown;

[0034] Figure 10 is an orthographic projection view of a helix according to an embodiment of the present technology;

[0035] Figure 11 is Figure 10 a top view of the helix of; and

[0036] Figure 12 A cross-sectional view of a channel of a helix structure according to an embodiment of the present technology is representatively shown. DETAILED DESCRIPTION

[0037] The present technology can be described in terms of functional block components and various processing steps. Such functional blocks can be implemented by any number of components configured to perform specified functions and achieve various results. For example, the present technology can use various gas pipelines, valves, power supplies, pressure controllers, and filters.

[0038] Referring Figure 1 , exemplary system 100 can include a reactor 105, which includes an upper body 103 and a lower body 104. The upper body 103 and the lower body 104 can be connected to each other. More specifically, the upper body 103 and the lower body 104 of the reactor 105 can form a reaction space 190 while being in surface contact and surface sealing with each other.

[0039] In various embodiments, the reactor 105 can be configured to perform processing on an object to be processed, such as a substrate 125 (e.g., a wafer). For example, the reactor 105 can be configured to perform heating, deposition, etching, polishing, ion implantation, and / or other processing on the object to be processed. In some embodiments, the reactor 105 can be configured to perform a moving function, a vacuum sealing function, a heating function, an exhaust function, and / or other functions on the object to be processed such that the object is processed in the reactor. In some embodiments, the reactor 105 can be a reactor in which an atomic layer deposition (ALD) or chemical vapor deposition (CVD) process is performed.

[0040] In various embodiments, the reactor 105 can include a substrate mounting unit 185 in the reaction space 190. The substrate mounting unit 185 can include a base 115 for supporting the substrate 125 and a heater (not shown) for heating the substrate supported by the base 115. The heater can be embedded within the base 115. The substrate mounting unit 185 can further include a pedestal 120 for supporting the base 115. For loading / unloading the substrate, the substrate mounting unit 185 can be configured to be vertically movable by being connected to a drive unit (not shown).

[0041] In various embodiments, referring Figure 1-8 , the upper body 103 can include a gas distribution system 110 (i.e., a showerhead). The gas distribution system 110 can include a 3D lattice structure 200, which includes a first plenum 600 and a second plenum 605. It should be noted that, for illustrative purposes only, Figure 6 reverse plenums 600, 605 are shown. The 3D lattice structure can be a triply periodic minimal surface structure, such as a helical structure or any other structure having two or more separate plenums. The 3D lattice structure can be formed by a plurality of unit cells, where Figure 7 a single unit cell having a first plenum 600 and a second plenum 605 is shown.

[0042] The continuous inner wall 705 separates the first plenum 600 from the second plenum 605. In other words, the first plenum 600 is isolated from the second plenum 605 by the continuous inner wall 705. The continuous inner wall 705 has a thickness T( Figure 9 ). The continuous inner wall 705 may have a smooth or polished surface facing into the plenum.

[0043] The gas distribution system 110 may further include an outer surface wall 130 that partially surrounds or otherwise defines the first and second plenums 600, 605. For example, the first and second plenums 600, 605 may open into the reaction space 190 at a surface plane 180 that is directly above the base 115 and the substrate 125. In other words, the outer surface wall 130 may surround all portions except for the surface plane 180 of the triply periodic minimal surface structure.

[0044] In various embodiments, the first plenum 600 has a first volume and the second plenum 605 has a second volume. In some embodiments, the first volume may be equal to the second volume. Alternatively, the first volume may be different (greater or less) than the second volume.

[0045] In various embodiments, the first plenum 600 may include a first plurality of continuously interconnected channels 601 that form the first volume. The first plurality of channels 601 may be branched (i.e., non-linear), for example two or more channels 601 may be connected at a first node. The first plurality of channels 601 may have a first width W1.

[0046] Similarly, the second plenum 605 may include a second plurality of continuously interconnected channels 606 that form the second volume. The second plurality of channels 606 may be branched, for example two or more channels 606 may be connected at a second node. The second plurality of channels 606 may have a second width W2.

[0047] In various embodiments, the first plurality of channels 600 are intertwined with the second plurality of channels 606.

[0048] As described above, the volume of the first plenum 600 may be the same as the volume of the second plenum 605. In this case, the first width W1 will be equal to the second width W2. Figure 2-8 A helical structure is shown in which the first plenum 600 has the same volume as the second plenum 605.

[0049] Alternatively, Figure 10-11 A helical structure is shown in which the first width W1 of the first plenum 600 is less than the second width W2 of the second plenum 605. Thus, the volume of the first plenum 600 is less than the volume of the second plenum 605. The helical structure may be described as having an aspect ratio of W1 / W2.

[0050] In various embodiments, referring to Figure 12 , the width of the channels in each plenum chamber can vary from the top 1200 of the outer surface 130 to the surface plane 180.

[0051] In some embodiments, the first plurality of channels 601 can have a variable width. For example, the first channel 601(a) in the first plurality of channels 601 can have a first width W C11 , and the second channel 601(b) in the first plurality of channels 601 can have a second width W greater than the first width W V1 . In other words, the width of the channels 601 increases from the top 1200 to the surface plane 180. C12

[0052] Similarly, the second plurality of channels 606 can have a variable width. For example, the first channel 606(a) in the second plurality of channels 606 can have a first width W C21 , and the second channel 606(b) in the first plurality of channels 606 can have a second width W greater than the first width W C21 . In other words, the width of the channels 606 increases from the top 1200 to the surface plane 180. C22

[0053] Additionally or alternatively, the width of the channels 601, 606 at the surface plane 180 can vary. For example, the channels at or near the center of the gas distribution system 110 and along the surface plane 180 can be narrower than the channels at the edges of the gas distribution system 110. This embodiment can also be combined with the Figure 12 embodiments.

[0054] In various embodiments, the cell size, wall thickness, and channel width can vary on a single feature. For example, in a single feature, there may be regions with a smaller cell size to provide a higher density region, and other regions with a larger cell size to provide a lower density region. The density of the regions can correspond to improved heat transfer or temperature regulation. Thus, some regions of the feature can be designed to provide a specific temperature distribution by having some regions with higher density cells and other regions with lower density cells.

[0055] In various embodiments, the gas distribution system 110 can be formed from a metal such as stainless steel, aluminum, metal alloy, etc. by additive manufacturing (i.e., 3D printing) or any other suitable manufacturing process.

[0056] In various embodiments, and returning to the reference Figure 1, System 100 may further include a plurality of valve manifolds coupled to the gas distribution system 100, such as a first valve manifold 140 and a second valve manifold 145. The first valve manifold 140 may include a plurality of inlets and one outlet. The outlet of the first valve manifold 140 may be coupled to the first inflation chamber 600 via a first gas line 150. Similarly, the second valve manifold 145 may include a plurality of inlets and one outlet. The outlet of the second valve manifold 145 may be coupled to the second inflation chamber 605 via a second gas line. For example, the first gas line 150 may be directly coupled to the passage from the first inflation chamber 600, and the second gas line 155 may be directly coupled to the passage from the second inflation chamber 605.

[0057] In various embodiments, system 100 may further include a plurality of containers, where each container contains a different chemical substance. For example, system 100 may include a first container 160 configured to contain a first chemical substance and a second container 165 configured to contain a second chemical substance. Each of the first and second containers 160, 165 may be coupled to one of the inlets of the first valve manifold 140 via a gas line. Thus, the first and second containers 160, 165 may supply the first and second chemical substances to the first inflation chamber 600.

[0058] Similarly, system 100 may include a third container 170 configured to contain a third chemical substance and a fourth container 175 configured to contain a fourth chemical substance. Each of the third and fourth containers 170, 175 may be coupled to one of the inlets of the second valve manifold 145 via a gas line. Thus, the third and fourth containers 170, 175 may supply the third and fourth chemical substances to the second inflation chamber 605.

[0059] In various embodiments, the inlets of the first valve manifold 140 may be coupled to an inert gas, and the inlets of the second valve manifold 145 may be coupled to an inert gas.

[0060] In various embodiments, system 100 may further include a controller (not shown) and a plurality of valves (not shown) disposed within the gas lines, such as gas lines 150, 155 and the gas lines from containers 160, 165, 170, 175 to valve manifolds 140, 145. The controller may operate the valves to supply various chemical substances to the gas distribution system 110 according to a desired pulse scheme.

[0061] In various embodiments, a helical structure may be formed using 3D printing to form other components of the system, such as an insulating layer, valves, gas lines, spray heads, chamber bodies, etc.

[0062] In operation, the controller can open the valve to allow a first chemical to flow through the first valve manifold 140 into the first inflation chamber 600. At the same time, an inert gas can flow through the first valve manifold 140 and into the first inflation chamber. Additionally, simultaneously, the inert gas can flow through the second valve manifold 145 and into the second inflation chamber 605.

[0063] Advantages of the present invention can include using less chemical due to a smaller surface area on the inner walls compared to conventional systems, lower frequency of cleaning the inner walls, and / or easier cleaning of the inner walls.

[0064] In the foregoing description, the technology has been described with reference to specific exemplary embodiments. The specific embodiments shown and described are illustrative of the technology and its best mode and are not intended to limit the scope of the technology in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the method and system may not have been described in detail. Additionally, the connecting lines shown in the various figures are intended to represent exemplary functional relationships and / or steps between the various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system.

[0065] The technology has been described with reference to specific exemplary embodiments. However, various modifications and changes can be made without departing from the scope of the technology. The specification and drawings are to be regarded as illustrative rather than restrictive, and all such modifications are intended to be included within the scope of the technology. Accordingly, the scope of the technology should be determined by the general embodiments described and their legal equivalents, rather than solely by the specific examples described above. For example, the steps recited in any method or process embodiment can be executed in any order, unless otherwise explicitly specified, and are not limited to the explicit order presented in the specific examples. Additionally, the components and / or elements recited in any device embodiment can be assembled in various arrangements or otherwise operably configured to produce substantially the same result as the technology, and are thus not limited to the specific configuration recited in the specific examples.

[0066] Benefits, other advantages, and solutions to problems have been described above with respect to specific embodiments. However, any benefit, advantage, solution to a problem, or any element that may cause any specific benefit, advantage, or solution to occur or become more pronounced should not be construed as a critical, essential, or necessary feature or component.

[0067] The terms "comprises", "comprising", or any variation thereof are intended to refer to a non-exclusive inclusion, such that a process, method, article, composition, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, composition, or apparatus. Other combinations and / or modifications of the above-described structures, arrangements, applications, proportions, elements, materials, or components used in the practice of the technology, in addition to those not specifically recited, may be varied or otherwise particularly adapted to specific environments, manufacturing specifications, design parameters, or other operational requirements without departing from its general principles.

[0068] The technology has been described above with reference to exemplary embodiments. However, changes and modifications may be made to the exemplary embodiments without departing from the scope of the technology. These and other variations or modifications are intended to be included within the scope of the technology as set forth in the following claims.

Claims

1. A device comprising: 3D lattice structures, including: a first plenum chamber having a first volume; a second plenum having a second volume isolated from the first plenum; and a continuous interior wall separating the first plenum chamber from the second plenum chamber; a first inlet coupled to the first plenum; a second inlet coupled to the second plenum; and An outer surface partially surrounds the first and second plenum chambers.

2. The device according to claim 1, wherein: The lattice structure is a three-periodic minimal surface structure.

3. The device according to claim 1, wherein: The first and second volumes are equal.

4. The device according to claim 1, wherein: The first and second volumes are not equal.

5. The device according to claim 1, wherein: The first plenum includes a first plurality of continuously interconnected channels.

6. The device according to claim 5, wherein: The first inlet is coupled to a first channel of the first plurality of channels, and the first channel has a first width.

7. The device according to claim 6, wherein: A second channel of the first plurality of channels has a second width greater than the first width.

8. The device according to claim 1, wherein: The second plenum includes a second plurality of continuously interconnected channels.

9. The device according to claim 8, wherein: The second inlet is coupled to a first channel of the second plurality of channels, and the first channel has a first width.

10. The device according to claim 9, wherein: A second channel of the second plurality of channels has a second width greater than the first width.

11. The device according to claim 1, wherein: The first plurality of channels are intertwined with the second plurality of channels.

12. The device according to claim 1, wherein: The first plurality of channels are coupled to the first inlet.

13. The device according to claim 1, wherein: The second plurality of channels is coupled to the second inlet.

14. The device according to claim 5, wherein: The first plurality of channels are non-linear.

15. An apparatus comprising: Lattice structures, including: a first plenum having a first volume and comprising a first plurality of continuously interconnected channels; a second plenum having a second volume and comprising a second plurality of continuously interconnected channels; wherein the first plurality of channels are intertwined with the second plurality of channels, and the first plurality of channels and the second plurality of channels are separated from each other by a common interior wall; a first inlet coupled to the first plenum; a second inlet coupled to the second plenum; and An outer surface partially surrounds the first and second plenum chambers.

16. The system according to claim 8, wherein: The first inlet is coupled to a first channel of the first plurality of channels, and the first channel has a first width.

17. The system of claim 8, wherein: A second channel of the first plurality of channels has a second width greater than the first width.

18. The system according to claim 8, wherein: The second inlet is coupled to a first channel of the second plurality of channels, and the first channel has a first width.

19. A system comprising: Reaction chamber, comprising: a susceptor configured to support a substrate; and A gas distribution system is arranged above the susceptor and comprises: a first plenum comprising a first plurality of channels, wherein the first plurality of channels comprises a first channel having a first width and a second channel having a second width, wherein the second width is greater than the first width; and a second plenum isolated from the first plenum and comprising a second plurality of channels, wherein the second plurality of channels comprises a third channel having a third width and a fourth channel having a fourth width, wherein the fourth width is greater than the third width; a first inlet coupled to the first passage; a second inlet coupled to the third passage; a first container configured to contain a precursor, wherein the first container is coupled to the first inlet; and A second container is configured to contain a reactant, wherein the first container is coupled to the second inlet.

20. The system of claim 19, wherein: The first plurality of channels are intertwined with the second plurality of channels, and the first plurality of channels and the second plurality of channels are separated from each other by a common interior wall.