Semiconductor processing apparatus

Abstract

The application discloses a semiconductor process equipment, and relates to the semiconductor field. The semiconductor process equipment comprises a process chamber, a first radio frequency feeding piece, a second radio frequency feeding piece, a first matching device and an impedance adjustable device. The process chamber comprises a cavity and a bearing device. One end of the first radio frequency feeding piece penetrates into the cavity and is connected with the bearing device. The other end of the first radio frequency feeding piece penetrates into the impedance adjustable device. One end of the second radio frequency feeding piece penetrates into the impedance adjustable device and is slidably connected with the other end of the first radio frequency feeding piece. The other end of the second radio frequency feeding piece is connected with the first matching device. The impedance adjustable device is connected between the first matching device and the cavity, and is used for adjusting the distance between the first matching device and the cavity, so as to adjust the impedance of a lower electrode in the semiconductor process equipment. The application can solve the problem of poor lower electrode impedance adjustment in the prior art.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of semiconductor technology, and particularly relates to a semiconductor process equipment. BACKGROUND

[0002] Radio frequency plasma processing equipment is widely used in the semiconductor industry, and inductive coupled plasma (ICP) equipment is one of the most widely used plasma generating devices. The ICP equipment usually generates plasma by inductive coupling discharge through a coil antenna, and then controls the plasma through a lower electrode to realize etching and deposition processes.

[0003] In the lower electrode system of the ICP equipment, when the power is loaded from the radio frequency power source to the electrostatic chuck (ESC) through the coaxial cable and the matching device in sequence, due to the existence of the plasma, the radio frequency bias will be generated on the ESC. The radio frequency bias will act on the ion components in the plasma, enhance the ion energy of the ions, and then control the etching and deposition processes in the semiconductor process. Due to the complexity of the etching and deposition processes, it is generally necessary to control the radio frequency power size and impedance of the lower electrode to realize the control of the ion energy. The usual way to control the impedance of the lower electrode is to adjust the isolation capacitor between the ESC and the radio frequency ground to realize the adjustment of the impedance of the lower electrode and the radio frequency bias, but this method has poor adjustability. SUMMARY

[0004] The purpose of the embodiments of the present application is to provide a semiconductor process equipment which can solve the problem of poor adjustability of the lower electrode impedance in the related art.

[0005] In order to solve the above technical problems, the present application is implemented as follows:

[0006] The embodiments of the present application provide a semiconductor process equipment, comprising: a process chamber, a first radio frequency feeding piece, a second radio frequency feeding piece, a first matching device and an impedance adjustable device.

[0007] The process chamber comprises: a cavity and a bearing device, the bearing device is arranged in the cavity, one end of the first radio frequency feeding piece penetrates into the cavity and is connected with the bearing device, the other end of the first radio frequency feeding piece penetrates into the impedance adjustable device, one end of the second radio frequency feeding piece penetrates into the impedance adjustable device and is slidably connected with the other end of the first radio frequency feeding piece, and the other end of the second radio frequency feeding piece is connected with the first matching device.

[0008] The impedance adjustable device is connected between the first matching device and the cavity, and is used for adjusting the distance between the first matching device and the cavity to adjust the impedance of the lower electrode in the semiconductor process equipment.

[0009] In the embodiment of the present application, the first matching device can be connected with the bearing device through the first radio frequency feeding member and the second radio frequency feeding member, so as to feed radio frequency energy to the bearing device; the distance between the first matching device and the cavity can be adjusted through the impedance adjustable device, the dynamic adjustable function of the impedance of the lower electrode in the semiconductor process equipment can be realized, the influence of the change of the parameters of some devices in the lower electrode circuit on the electromagnetic field and the flow field of the wafer edge can be avoided, and then the adjustment of the radio frequency bias of the lower electrode can be more conveniently realized. BRIEF DESCRIPTION OF DRAWINGS

[0010] Figure 1 Structure schematic diagram of the semiconductor process equipment disclosed in the embodiment of the present application;

[0011] Figure 2 Schematic diagram of the equivalent radio frequency circuit of the lower electrode disclosed in the embodiment of the present application;

[0012] Figure 3 Structure schematic diagram of the impedance adjustable part disclosed in the embodiment of the present application;

[0013] Figure 4 Internal structure schematic diagram of the impedance adjustable part disclosed in the embodiment of the present application;

[0014] Figure 5 Schematic diagram of the impedance distribution of the impedance adjustable part disclosed in the embodiment of the present application;

[0015] Figure 6 Internal structure schematic diagram of another form of the impedance adjustable part disclosed in the embodiment of the present application.

[0016] Explanation of reference signs:

[0017] 100-impedance adjustable device; 110-shielding shell; 111-first shell; 112-second shell; 121-first conductive member; 122-second conductive member;

[0018] 200-cavity; 210-first cavity; 220-second cavity; 230-third cavity;

[0019] 300-bearing device; 310-bearing pedestal; 320-bearing disc; 330-suspension arm; 340-ceramic base ring; 350-ceramic isolation ring; 360-metal grounding ring; 370-focusing ring;

[0020] 410-first radio frequency feeding member; 420-second radio frequency feeding member;

[0021] 510-first matching device; 511-matching device body; 512-adapter plate; 520-second matching device; 530-third matching device;

[0022] 600 - sliding guide;

[0023] 710 - first ceramic cylinder; 720 - second ceramic cylinder;

[0024] 810 - first radio frequency coil; 820 - second radio frequency coil. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are some of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.

[0026] The terms "first", "second", and the like in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described herein, and the objects distinguished by "first", "second", etc. are generally a category and do not limit the number of objects, for example, the first object can be one or more. In addition, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / ", generally indicates that the front and rear associated objects are in a "or" relationship.

[0027] The embodiments of the present application will be described in detail below with reference to the drawings, through specific embodiments and their application scenarios.

[0028] Reference Figures 1 to 6 The embodiments of the present application disclose a semiconductor process equipment, the disclosed semiconductor process equipment includes a process chamber, a first radio frequency feed 410, a second radio frequency feed 420, a first matching device 510 and an impedance adjustable device 100.

[0029] The process chamber is the basic component of the semiconductor process equipment, which can provide a sealed process environment for the process, and also can provide installation and accommodation basis for other components. Among them, the process chamber includes a cavity 200 and a carrying device 300, the carrying device 300 is arranged in the cavity 200, used for carrying the wafer, so that the wafer can carry out the process in the cavity 200.

[0030] The radio frequency feed, the first matching device 510, the bearing device 300 and the like are all part of the lower electrode of the semiconductor process equipment. The radio frequency energy output by the radio frequency power supply can be processed by the first matching device 510 and transmitted to the bearing device 300 through the radio frequency feed. Due to the existence of the plasma, the radio frequency bias voltage is generated on the bearing device 300. The radio frequency bias voltage acts on the ion components in the plasma, enhances the ion energy of the ions, and thus the processing procedure of the semiconductor process can be controlled.

[0031] To realize the adjustment of the impedance between the first matching device 510 and the process chamber, the impedance adjustable device 100 is arranged between the first matching device 510 and the process chamber in the embodiment of the application. The impedance of the lower electrode in the semiconductor process equipment is adjusted through the impedance adjustable device 100, so as to realize the adjustment of the radio frequency bias voltage of the lower electrode.

[0032] Specifically, the impedance adjustable device 100 is connected between the first matching device 510 and the cavity 200, and is used to adjust the distance between the first matching device 510 and the cavity 200, so as to adjust the impedance of the lower electrode in the semiconductor process equipment. For example, the impedance adjustable device 100 can adjust the distance between the first matching device 510 and the cavity 200 by changing the volume, size and the like of the impedance adjustable device 100. Of course, other ways can also be used, which are not limited here.

[0033] Considering that the first matching device 510 is connected with the bearing device 300 through the radio frequency feed, so that the radio frequency energy is transmitted to the bearing device 300 through the radio frequency feed, in order to avoid interference caused by the adjustment of the distance between the first matching device 510 and the cavity 200, the radio frequency feed can be divided into the first radio frequency feed 410 and the second radio frequency feed 420. When the first matching device 510 and the cavity 200 are relatively moved to adjust the distance, the first radio frequency feed 410 and the second radio frequency feed 420 can be relatively moved, so that the relative movement of the first matching device 510 and the cavity 200 can be prevented, and interference can be avoided.

[0034] The one end of the first radio frequency feed 410 penetrates into the cavity 200 and is connected with the bearing device 300, the other end of the first radio frequency feed 410 penetrates into the impedance adjustable device 100, the one end of the second radio frequency feed 420 penetrates into the impedance adjustable device 100 and is slidably connected with the other end of the first radio frequency feed 410, and the other end of the second radio frequency feed 420 is connected with the first matching device 510. Based on the above arrangement, when the first matching device 510 moves relative to the cavity 200 to adjust the distance, the other end of the first radio frequency feed 410 and the one end of the second radio frequency feed 420 can slide relative to each other, so that the movement of the first matching device 510 relative to the cavity 200 can be prevented from being hindered, and reliable connection between the first radio frequency feed 410 and the second radio frequency feed 420 can be ensured, and stable transmission of radio frequency energy can be ensured.

[0035] Based on the above arrangement, the first matching device 510 can be connected with the bearing device 300 through the first radio frequency feed 410 and the second radio frequency feed 420, so as to feed radio frequency energy to the bearing device 300; the distance between the first matching device 510 and the cavity 200 can be adjusted through the impedance adjustable device 100, the dynamic adjustable function of the impedance of the lower electrode in the semiconductor process equipment can be realized, the influence of the change of some device parameters in the lower electrode circuit on the electromagnetic field and the flow field of the wafer edge can be avoided, and then the adjustment of the radio frequency bias voltage of the lower electrode can be more conveniently realized.

[0036] Reference Figures 3 to 6 In some embodiments, the impedance adjustable device 100 can include a shielding shell 110, which is arranged outside the sliding connection position of the first radio frequency feed 410 and the second radio frequency feed 420, one end of the shielding shell 110 is connected with the first matching device 510, and the other end of the shielding shell 110 is connected with the cavity 200. In this way, the first matching device 510 can be installed to the cavity 200, the stability of the installation of the first matching device 510 can be ensured, and the shielding shell 110 can also shield the energy transmitted by the first radio frequency feed 410 and the second radio frequency feed 420 respectively, so as to reduce the energy loss.

[0037] In consideration of the relative movement between the first matching device 510 and the cavity 200 to adjust the distance, in the embodiment of the present application, the shielding shell 110 can deform itself to move the first matching device 510 close to or away from the cavity 200, so that the relative movement between the first matching device 510 and the cavity 200 can be adapted by the deformation of the shielding shell 110 to avoid interference. For example, at least part of the shielding shell 110 can deform flexibly, of course, at least part of the shielding shell 110 can also move, etc. In summary, as long as the shape and volume of the shielding shell 110 can be changed to adapt to the relative movement between the first matching device 510 and the cavity 200, the specific form is not limited.

[0038] One embodiment is as shown in the figure, the shielding shell 110 can include a first shell 111 and a second shell 112, wherein the first shell 111 is connected with the cavity 200, the second shell 112 is connected with the first matching device 510, and at least part of one of the first shell 111 and the second shell 112 is slidably inserted into the other. Figures 3 to 5

[0039] Specifically, the side of the first shell 111 away from the second shell 112 can be fixed to the outer wall of the cavity 200, and the side of the second shell 112 away from the first shell 111 can be fixedly connected with the first matching device 510, so that when the first matching device 510 moves close to or away from the cavity 200, the first shell 111 and the second shell 112 slide towards each other or slide away from each other to adapt to the movement of the first matching device 510 relative to the cavity 200, avoiding interference.

[0040] For example, one end of the first shell 111 away from the cavity 200 can be inserted into the second shell 112, of course, one end of the second shell 112 away from the first matching device 510 can also be inserted into the first shell 111, as long as the first shell 111 and the second shell 112 can move relative to each other, the specific form is not limited.

[0041] In addition, in order to prevent the first shell 111 and the second shell 112 from being relatively separated, a limiting structure such as a limiting edge can also be arranged at the insertion area of the two, so as to prevent the first shell 111 and the second shell 112 from being relatively separated by the limiting effect of the limiting structure.

[0042] Optionally, the first shell 111 and the second shell 112 can be designed as circular shells, rectangular shells, etc., of course, other shapes are also possible, which are not limited here.

[0043] ​In another embodiment, the shielding shell 110 may also include other numbers of shells, such as three, four, six, etc., with each pair of adjacent shells interlocking. In this way, it can also accommodate the relative proximity or distance between the first matcher 510 and the cavity 200 without interference.

[0044] In other embodiments, such as Figure 6 As shown, the shielding shell 110 can also be a flexible shielding tube, which can be flexibly deformed. Thus, when the first matching device 510 moves closer to or further away from the cavity 200, the flexible shielding tube can undergo flexible deformation. Since the flexible shielding tube itself has extensibility, it can avoid interfering with the movement of the first matching device 510 relative to the cavity 200 through its own expansion and contraction.

[0045] For example, the flexible shielding tube can be a corrugated pipe, but of course, it can also be other forms, which are not specifically limited here.

[0046] Considering the sliding fit between the first housing 111 and the second housing 112, to prevent radio frequency energy leakage at the sliding fit, a first conductive element 121 can be provided at the sliding fit between the first housing 111 and the second housing 112, such as... Figure 4 As shown, the first conductive element 121 electrically connects the first housing 111 and the second housing 112.

[0047] Specifically, when the end of the second housing 112 facing away from the first matching device 510 is inserted into the first housing 111, the size of the outer surface of the second housing 112 is smaller than the size of the inner surface of the first housing 111. That is, the cross-sectional area enclosed by the outer surface of the second housing 112 is smaller than the cross-sectional area enclosed by the inner surface of the first housing 111, so as to ensure that one end of the second housing 112 can be inserted into the first housing 111. For example, the gap between the inner surface of the first housing 111 and the outer surface of the second housing 112 can be 0.1-0.5 mm. Of course, other values ​​are also possible, which are not specifically limited here.

[0048] Furthermore, the first conductive element 121 is disposed between the outer surface of the second housing 112 and the inner surface of the first housing 111 to achieve electrical conduction between the second housing 112 and the first housing 111, and can also seal the gap at the sliding connection.

[0049] Based on the above configuration, the first conductive element 121 can ensure good electrical conduction during the relative movement of the first housing 111 and the second housing 112 and effectively prevent radio frequency energy from leaking from the sliding connection and generating radio frequency radiation.

[0050] In consideration of the connection between the first shell 111 and the cavity 200, a first conductive member 121 can be arranged at the connection between the first shell 111 and the cavity 200 to electrically connect the first shell 111 and the cavity 200. In this way, the first conductive member 121 can seal the gap at the connection between the first shell 111 and the cavity 200, so as to prevent the impedance of the radio frequency circuit from increasing and the risk of radio frequency energy leakage due to the existence of the gap.

[0051] In consideration of the connection between the second shell 112 and the first matching device 510, a first conductive member 121 can be arranged at the connection between the second shell 112 and the first matching device 510 to electrically connect the second shell 112 and the first matching device 510. In this way, the first conductive member 121 can seal the gap at the connection between the second shell 112 and the first matching device 510, so as to prevent the impedance of the radio frequency circuit from increasing and the risk of radio frequency energy leakage due to the existence of the gap.

[0052] Referring to Figure 3 and Figure 4 In some embodiments, the first matching device 510 can include a matching device body 511 and a adapter plate 512, wherein the adapter plate 512 is arranged on the side of the matching device body 511 facing the cavity 200, and the second shell 112 is connected to the adapter plate 512. In this way, the adapter plate 512 can be used to fixedly connect the second shell 112 and the matching device body 511, so as to increase the contact area between the second shell 112 and the first matching device 510 to some extent, thereby improving the connection firmness and stability.

[0053] In order to alleviate the problem of radio frequency energy leakage, a first conductive member 121 can be arranged at the connection between the second shell 112 and the adapter plate 512 to seal the connection between the second shell 112 and the adapter plate 512, so as to prevent the impedance of the radio frequency circuit from increasing and the risk of radio frequency energy leakage due to the existence of the gap.

[0054] Of course, the first conductive member 121 can also be arranged between the adapter plate 512 and the matching device body 511 to seal the connection between the adapter plate 512 and the matching device body 511, so as to prevent the impedance of the radio frequency circuit from increasing and the risk of radio frequency energy leakage due to the existence of the gap.

[0055] Optionally, the first conductive member 121 can be a metal coil or a metal clamp, and the metal coil and the metal clamp can also have a certain elasticity. Of course, other forms are also possible, which are not limited here.

[0056] In addition, each of the above-mentioned connection portions can be provided with multiple turns of the first conductive member 121 to increase the contact area, thereby making the electrical conduction better and achieving a better effect of preventing leakage of radio frequency energy.

[0057] To ensure the installation stability of the first matching device 510 and the stability of movement relative to the cavity 200, the semiconductor process equipment can further include a sliding guide 600, one end of which is connected to the cavity 200, and the other end of which is slidingly connected to the first matching device 510, as shown in the figure. Figures 3 to 6 Based on this arrangement, the sliding guide 600 can provide a certain support to the first matching device 510 to prevent the first matching device 510 from tilting downward, and can also guide the movement of the first matching device 510 to ensure that the first matching device 510 moves in a predetermined direction and ensures the movement accuracy.

[0058] When the shielding shell 110 includes the first shell 111 and the second shell 112 that slide relative to each other, and the radio frequency feed-in member is divided into the first radio frequency feed-in member 410 and the second radio frequency feed-in member 420 that slide relative to each other, the arrangement of the sliding guide 600 can ensure the coaxiality of the first shell 111 and the second shell 112 and the coaxiality of the first radio frequency feed-in member 410 and the second radio frequency feed-in member 420, so as to prevent the first matching device 510 from being biased to limit the relative movement ability or cause wear between the first shell 111 and the second shell 112 and between the first radio frequency feed-in member 410 and the second radio frequency feed-in member 420.

[0059] In some embodiments, one end of the sliding guide 600 can be fixed to the side wall of the cavity 200 by a screw, and the other end can be fixed to the adapter plate 512 of the first matching device 510 by a screw, so as to ensure the firmness and stability of the connection.

[0060] For example, the first matching device 510 can be provided with a guide groove, and the sliding guide 600 is arranged in the guide groove and slidingly connected, so as to ensure the stable movement of the first matching device 510.

[0061] To achieve the sliding connection of the first radio frequency feed-in member 410 and the second radio frequency feed-in member 420, in the embodiments of the present application, at least part of one of the first radio frequency feed-in member 410 and the second radio frequency feed-in member 420 is slidingly inserted into the other, which can ensure the relative sliding of the first radio frequency feed-in member 410 and the second radio frequency feed-in member 420, and also ensure good electrical conduction.

[0062] Optionally, the other end of the first radio frequency feed 410 can be provided with a sliding slot, and one end of the second radio frequency feed 420 is movably inserted into the sliding slot to realize relative movement and electrical conduction. Of course, it can also be that one end of the second radio frequency feed 420 is provided with a sliding slot, and the other end of the first radio frequency feed 410 is slidably inserted into the sliding slot, which can also realize relative movement and electrical conduction.

[0063] In view of the sliding fit of the first radio frequency feed 410 and the second radio frequency feed 420, in order to prevent radio frequency energy leakage at the sliding fit, the sliding fit of the first radio frequency feed 410 and the second radio frequency feed 420 can be provided with a second conductive member 122, as shown in Figure 4 and Figure 6 The second conductive member 122 electrically connects the first radio frequency feed 410 and the second radio frequency feed 420.

[0064] Specifically, when one end of the second radio frequency feed 420 is inserted into the other end of the first radio frequency feed 410, the cross-sectional area surrounded by the outer surface of the second radio frequency feed 420 is smaller than the cross-sectional area surrounded by the inner surface of the first radio frequency feed 410, so as to ensure that the second radio frequency feed 420 can be inserted into the first radio frequency feed 410. Exemplarily, there can be a gap between the outer surface of the second radio frequency feed 420 and the inner surface of the first radio frequency feed 410. Of course, when the other end of the first radio frequency feed 410 is inserted into one end of the second radio frequency feed 420, a gap can also be formed.

[0065] In order to realize the sealing of the gap, the second conductive member 122 can be arranged at the gap, which can realize the sealing of the gap on the one hand, thereby effectively preventing radio frequency energy from leaking from the sliding connection to generate radio frequency radiation, and on the other hand, it can also make the first radio frequency feed 410 and the second radio frequency feed 420 maintain good electrical conduction during relative movement.

[0066] Referring to Figure 1 In addition to the above structure, the semiconductor process equipment can also include a first ceramic barrel 710, a second ceramic barrel 720, a first radio frequency coil 810, a second radio frequency coil 820, a second matching device 520, a third matching device 530, and the like.

[0067] The cavity 200 can be divided into a first cavity 210, a second cavity 220 and a third cavity 230 from top to bottom. The first cavity 210 and the second cavity 220 are connected, and the second cavity 220 and the third cavity 230 are connected. The first ceramic tube 710 is disposed in the first cavity 210 and is positioned opposite to the communication port between the first cavity 210 and the second cavity 220. The first radio frequency coil 810 is wound around the outside of the first ceramic tube 710 and is connected to the radio frequency power supply through the second matching device 520. The second ceramic tube 720 is disposed in the second cavity 220 and is positioned opposite to the communication port between the second cavity 220 and the third cavity 230. The second radio frequency coil 820 is wound around the outside of the second ceramic tube 720 and is connected to the radio frequency power supply through the third matching device 530.

[0068] Additionally, the carrier device 300 may include a carrier base 310 and a carrier disk 320. The carrier base 310 is connected to the side wall of the cavity 200 via a cantilever 330. The first RF feed unit 410 passes sequentially through the side wall of the cavity 200, the cantilever 330, and the carrier base 310, and is connected to the bottom of the carrier disk 320. A ceramic base ring 340 is provided on the carrier base 310, and a ceramic isolation ring 350 is provided on the ceramic base ring 340. The carrier disk 320 is supported on the ceramic base ring 340 and located inside the ceramic isolation ring 350. A metal grounding ring 360 is provided on the carrier base 310 and is sleeved around the outside of the ceramic base ring 340 and the ceramic isolation ring 350. It is connected to the cavity 200 via the cantilever 330 to achieve grounding. A focusing ring 370 is sleeved around the outside of the wafer carried by the carrier disk 320 and covers the metal grounding ring 360 and the ceramic isolation ring 350.

[0069] It should be noted that the specific working principle of the semiconductor process equipment in the embodiments of this application can be referred to the prior art, and will not be described in detail here.

[0070] Figure 2 For the equivalent radio frequency circuit of the lower electrode of the semiconductor process equipment in this application embodiment, in the semiconductor process equipment, in addition to the stray capacitance (i.e., C) of the carrier disk 320 (i.e., electrostatic chuck) in the carrier device 300 designed during the equipment development stage, stray The capacitance value C corresponding to the thickness of the electrostatic adsorption layer ceramic in the support device 300. stray-base In addition, an impedance adjustable device 100 was added, that is, Figure 2 Z in shield Equivalent impedance device. Since the impedance adjustable device 100 can adjust the impedance without affecting the environment inside the process chamber, the radio frequency bias voltage of the lower electrode can be adjusted within a wider impedance adjustment range.

[0071] The impedance adjustment principle in this embodiment can be equivalent to the series connection of the impedances of the first housing 111 and the second housing 112, that is:

[0072]

[0073] As shown in Figure 5 , Z1 is the impedance value of the first shell 111 except the intersection part with the second shell 112, Z2 is the impedance value of the second shell 112, and the shaded area is the intersection part of the first shell 111 and the second shell 112. By adjusting the relative position relationship and the respective radius of the first shell 111 and the second shell 112, the impedance adjustment of Z1 and Z2 can be realized, and finally the adjustment of Z shield can be realized.

[0074] In summary, the embodiment of the present application sets the impedance adjustable device 100 between the first matching device 510 and the process chamber, and adjusts the distance between the first matching device 510 and the process chamber by the relative movement between the first matching device 510 and the process chamber through the impedance adjustable device 100, so that the impedance dynamic adjustable function of the lower electrode can be realized, and the influence of the electromagnetic field and the flow field on the edge of the wafer caused by the change of some components (such as C stray and C stray-base ) in the lower electrode can be avoided, so that the adjustment of the radio frequency bias of the lower electrode can be realized more quickly.

[0075] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments, and the above specific embodiments are only illustrative but not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the protection scope of the claims.

Claims

1. A semiconductor process apparatus, characterized by, The application relates to a semiconductor processing equipment, which comprises a process chamber, a first radio frequency feeder (410), a second radio frequency feeder (420), a first matching device (510) and an impedance adjustable device (100). The process chamber comprises a cavity (200) and a supporting device (300) arranged in the cavity (200), one end of the first radio frequency feeder (410) penetrates into the cavity (200) and is connected with the supporting device (300), the other end of the first radio frequency feeder (410) penetrates into the impedance adjustable device (100), one end of the second radio frequency feeder (420) penetrates into the impedance adjustable device (100) and is slidably connected with the other end of the first radio frequency feeder (410), and the other end of the second radio frequency feeder (420) is connected with the first matching device (510). The impedance adjustable device (100) is connected between the first matching device (510) and the cavity (200) and is used for adjusting the distance between the first matching device (510) and the cavity (200) so as to adjust the impedance of a lower electrode in the semiconductor processing equipment. The impedance adjustable device (100) comprises a shielding shell (110), the shielding shell (110) is arranged outside the sliding connection position of the first radio frequency feeder (410) and the second radio frequency feeder (420), one end of the shielding shell (110) is connected with the first matching device (510), and the other end of the shielding shell (110) is connected with the cavity (200).

2. The semiconductor process apparatus according to claim 1, wherein The shielding shell (110) can make the first matching device (510) approach or move away from the cavity (200) by deforming itself. The shielding shell (110) comprises a first shell (111) and a second shell (112).

3. The semiconductor process apparatus according to claim 2, wherein The first shell (111) is connected with the cavity (200), and the second shell (112) is connected with the first matching device (510). At least part of one of the first shell (111) and the second shell (112) is slidably arranged in the other. A first conductive member (121) is arranged at the sliding connection position of the first shell (111) and the second shell (112), and the first conductive member (121) electrically connects the first shell (111) and the second shell (112).

4. The semiconductor process apparatus according to claim 3, wherein In addition, a first conductive member (121) is arranged at the connection position of the first shell (111) and the cavity (200), and the first conductive member (121) electrically connects the first shell (111) and the cavity (200). In addition, a first conductive member (121) is arranged at the connection position of the second shell (112) and the first matching device (510), and the first conductive member (121) electrically connects the second shell (112) and the first matching device (510). The first conductive member (121) is a metal coil or a metal clamp.

5. The semiconductor process apparatus according to claim 4, wherein The shielding shell (110) is a flexible shielding pipe.

6. The semiconductor process apparatus according to claim 2, wherein ​ 7. The semiconductor process apparatus according to claim 3, wherein The first adapter (510) comprises an adapter body (511) and a adapter plate (512), the adapter plate (512) is arranged on the side of the adapter body (511) facing the cavity (200); The second shell (112) is connected with the adapter plate (512), and a first conductive part (121) is arranged at the connection position of the second shell (112) and the adapter plate (512), the first conductive part (121) electrically connects the first shell (111) and the adapter plate (512).

8. The semiconductor process apparatus according to claim 1, wherein The semiconductor process equipment further comprises a sliding guide rail (600), one end of the sliding guide rail (600) is connected with the cavity (200); The other end of the sliding guide rail (600) is slidingly connected with the first adapter (510).

9. The semiconductor process apparatus according to claim 1, wherein At least part of one of the first radio frequency feed (410) and the second radio frequency feed (420) is slidingly inserted into the other.

10. The semiconductor process apparatus according to claim 9, wherein A second conductive part (122) is arranged at the sliding fit position between the first radio frequency feed (410) and the second radio frequency feed (420), the second conductive part (122) electrically connects the first radio frequency feed (410) and the second radio frequency feed (420).

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