Substrate processing method

Abstract

The present invention relates to a substrate processing method comprising alternately applicable process formulations and cleaning formulations, the process formulation comprising: a deposition step of forming a thin film on a substrate disposed on an upper portion of a heater within a cavity; a temperature lowering step of lowering the temperature of the heater; a purging step, wherein the interior of the cavity is purged; and a pumping step of discharging gas inside the cavity, the cleaning formula comprising: a cleaning step of cleaning the inside of the cavity; a purging step, wherein the interior of the cavity is purged; a temperature increasing step of increasing the temperature of the heater; a purging step, wherein the interior of the cavity is purged; and a pumping step of discharging the gas in the cavity.

Description

Technical Field

[0001] The present invention relates to a substrate processing method. More specifically, the present invention relates to a substrate processing method that significantly reduces the delay time required for the temperature to rise and fall to eliminate the temperature difference between a process recipe and a clean recipe, thereby contributing to an improvement in production efficiency. Background Art

[0002] In a semiconductor device manufacturing process, a substrate can be etched, deposited, or subjected to various other processes. For example, in a substrate processing system, various deposition processes such as atomic layer deposition (ALD), plasma enhanced atomic layer deposition (PEALD), chemical vapor deposition (CVD), and plasma enhanced chemical vapor deposition (PECVD), an etching process, or other processes are performed to form a thin film on a substrate. In a process chamber, a radio frequency (RF) electric field for forming a plasma is generally applied.

[0003] As described above, in a manufacturing process using plasma, a film-forming material for the process and by-products such as polymers can adhere and accumulate on the walls inside the process chamber, a substrate support, or other components. Thereafter, the accumulated material peels off from the adhered portion, floats in the process chamber, and then adheres to the substrate as foreign matter, and thus can be a particulate factor causing process defects. In addition, process by-products may also cause unnecessary negative results in subsequent processes. To prevent these problems, a cleaning process is performed on the process chamber as a periodic maintenance work.

[0004] Figure 1 To briefly show a flowchart of a substrate processing method according to the prior art Figure 2 To show a schematic diagram of the temperature of each step of a substrate processing method according to the prior art.

[0005] Refer to Figure 1 and Figure 2 The substrate processing method includes a process recipe and a clean recipe. The substrate processing method can be performed in a chamber including a heater.

[0006] The process recipe includes a stabilization step (S11), a deposition step (S12), a purging step (S13), an origin positioning step (S14), a pumping step (S15), and a temperature drop step (S16).

[0007] The cleaning recipe includes a cleaning step (S21), a purging step (S22), a pre - coating step (S23), a purging step (S24), a pumping step (S25), and a temperature rise step (S26).

[0008] The temperature drop step (S16) and the temperature rise step (S26) are steps for eliminating the temperature difference between the process recipe and the cleaning recipe.

[0009] The deposition step (S12), the purging step (S13), the origin positioning step (S14), and the pumping step (S15) in the process recipe are performed at a heater temperature of about 550°C. Therefore, when the cleaning recipe is subsequently performed, the heater temperature needs to be lowered to improve the cleaning efficiency. Thus, through the temperature drop step (S16), the temperature of the heater is lowered to about 480°C, and it takes a long time to lower the temperature. As an example, it may take more than about 15 minutes to lower the temperature.

[0010] After the heater temperature drops, the cleaning recipe is performed. The cleaning step (S21), the purging step (S22), the pre - coating step (S23), the purging step (S24), and the pumping step (S25) in the cleaning recipe are performed at a low temperature of about 480°C. Therefore, in order to perform the process recipe again subsequently, the heater temperature needs to be raised. Thus, through the temperature rise step (S26), the temperature of the heater is raised to about 550°C, and it takes a long time to raise the temperature. As an example, it may take more than about 15 minutes to raise the temperature.

[0011] As described above, in the conventional substrate processing method, it takes a long time for the heater temperature to rise and fall between the process recipe and the cleaning recipe, so there is a problem of reduced production efficiency.

[0012] The prior art is technical information that the inventor retained or mastered during the derivation of the present invention, and is not necessarily publicly known art that was made available to the general public before the filing of the present invention.

[0013] Prior art documents

[0014] Patent documents

[0015] Patent Document 1: Korean Published Patent No. 10-2019-0031350 (Publication Date: March 25, 2019) Summary of the Invention

[0016] Technical Problem

[0017] In terms of solving the above problems, an object of the present invention is to provide a substrate processing method that significantly reduces the delay time required for the temperature to rise and fall when performing subsequent processes according to the process temperature difference between the process recipe and the cleaning recipe, thereby contributing to an improvement in production efficiency.

[0018] The technical problems to be solved by the present invention are not limited to the problems mentioned above, and those skilled in the art to which the present invention pertains can clearly understand other technical problems to be solved that are not mentioned from the following description.

[0019] Solution to the Problem

[0020] A substrate processing method according to an embodiment of the present invention includes alternately applied process recipes and cleaning recipes. The process recipe includes: a deposition step of forming a thin film on a substrate disposed above a heater in a chamber; a temperature drop step of lowering the temperature of the heater; a purge step of purging the inside of the chamber; and a pumping step of exhausting the gas inside the chamber. The cleaning recipe includes: a cleaning step of cleaning the inside of the chamber; a purge step of purging the inside of the chamber; a temperature rise step of raising the temperature of the heater; a purge step of purging the inside of the chamber; and a pumping step of exhausting the gas inside the chamber.

[0021] At this time, the process recipe may further include a stabilization step of stabilizing the gas supply amount used in the deposition step before the deposition step.

[0022] In addition, the process recipe may further include an origin positioning step of returning the substrate to its original position between the purge step and the pumping step.

[0023] At this time, the cleaning recipe may further include a pre-coating step of forming a pre-coating film on the inner wall of the chamber between the purge step and the temperature rise step.

[0024] In this case, the temperature of the heater starts to drop from the temperature drop step until it drops to the temperature at which the cleaning recipe is executed.

[0025] In addition, the delay time from the execution of the process recipe to the execution of the cleaning recipe may be 8 to 12 minutes.

[0026] In this case, the temperature drop step may further include a heat exchanger temperature control step of reducing the temperature of the heat exchanger connected to the heater.

[0027] In addition, the heat exchanger temperature control step may be executed by a software function.

[0028] In addition, the temperature of the heater starts to rise from the temperature rise step and increases to the temperature for executing the process recipe.

[0029] In addition, the delay time from after executing the cleaning recipe to before executing the process recipe may be 8 to 12 minutes.

[0030] At this time, the temperature rise step may further include a heat exchanger temperature control step of increasing the temperature of the heat exchanger connected to the heater.

[0031] In addition, the heat exchanger temperature control step may be executed by a software function.

[0032] Effects of the Invention

[0033] As described above, according to the substrate processing method of the present invention, according to the process execution temperature difference between the process recipe and the cleaning recipe, the delay time required for the temperature to rise and fall when executing subsequent processes is significantly reduced, which can contribute to the improvement of production efficiency.

[0034] The effects of the present invention are not limited to the above-mentioned effects, and those of ordinary skill in the technical field to which the present invention pertains can clearly understand other effects not mentioned from the following description. Brief Description of the Drawings

[0035] Figure 1 To briefly show a flowchart of a substrate processing method according to the prior art.

[0036] Figure 2 To show a schematic diagram of the temperature of each step of a substrate processing method according to the prior art.

[0037] Figure 3 To briefly show a flowchart of a substrate processing method according to an embodiment of the present invention.

[0038] Figure 4 To show a schematic diagram of the temperature of each step of a substrate processing method according to an embodiment of the present invention.

[0039] Figure 5 To briefly show a schematic diagram of a substrate processing apparatus capable of applying a substrate processing method according to an embodiment of the present invention.

[0040] Figure 6To briefly show a flowchart of a substrate processing method including heat exchanger temperature control according to an embodiment of the present invention.

[0041] Figure 7 To briefly show a flowchart of a substrate processing method including heat exchanger temperature control according to an embodiment of the present invention.

[0042] (Description of reference numerals)

[0043] 100: Chamber

[0044] 110: Heater

[0045] 111: Heating part

[0046] 112: Coolant path

[0047] 120: Temperature sensor

[0048] 130: Heating control part

[0049] 140: Coolant inlet part

[0050] 150: Coolant discharge part

[0051] 200: Heat exchanger

[0052] 210: Temperature control part Detailed description

[0053] In the present invention, for the sake of difference from the prior art, clarity, and easy understanding of the technology, the drawings may be exaggeratedly shown. In addition, the following terms are defined considering the functions in the present invention and may vary according to the intentions or conventions of users and operators. Therefore, these terms should be defined based on the technical content throughout this specification. On the other hand, the embodiments are merely exemplary matters of the constituent elements set forth in the scope of the invention claimed in the present invention and are not used to limit the scope of the invention claimed in the present invention. The scope of the invention claimed should be interpreted based on the technical idea throughout the specification of the present invention.

[0054] Throughout the specification, when it is stated that a certain constituent "includes" a certain constituent, unless there is a particularly contrary description, it means that other constituents may be further included, rather than excluding other constituents.

[0055] In addition, when it is stated that a certain component "connects", "is connected", or "combines" with another component, it means that not only the cases of "direct connection", "direct connection", or "direct combination" exist, but also the cases of "connection with other components intervening therebetween", "connection with other components intervening therebetween", or "combination with other components intervening therebetween" exist. On the contrary, when it is stated that a certain component "is directly connected", "is directly connected", or "is directly combined" with another component, it should be understood that there are no other components in between.

[0056] In addition, when directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", "both ends", etc. are used, since they are terms used for exemplary purposes regarding the orientation of the disclosed drawings, they should not be restrictively interpreted. When terms such as "first", "second", etc. are used, they are terms for distinguishing each component and should not be restrictively interpreted.

[0057] To more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well-known to those of ordinary skill in the art to which the following embodiments pertain are omitted. Also, in the drawings, detailed descriptions of parts irrelevant to the description of the embodiments are omitted.

[0058] Hereinafter, with reference to the drawings, embodiments of the present invention will be described in detail.

[0059] Figure 3 To briefly show a flowchart of a substrate processing method according to an embodiment of the present invention, Figure 4 To show a schematic diagram of the temperature of each step of a substrate processing method according to an embodiment of the present invention, Figure 5 To briefly show a schematic diagram of a substrate processing apparatus capable of applying the substrate processing method according to an embodiment of the present invention, Figure 6 To briefly show a flowchart of a substrate processing method including heat exchanger temperature control according to an embodiment of the present invention, Figure 7 To briefly show a flowchart of a substrate processing method including heat exchanger temperature control according to an embodiment of the present invention.

[0060] First, to help understand the substrate processing method according to an embodiment of the present invention, a substrate processing apparatus capable of applying the substrate processing method will be described.

[0061] Refer to Figure 5 , the substrate processing apparatus capable of applying the substrate processing method includes a chamber 100 and a heat exchanger 200.

[0062] The chamber 100 can show a space enclosed from the outside to which the substrate processing method is applied, and can include side walls (not shown) and leads (not shown) for forming such a space.

[0063] In the cavity 100, a processing process through plasma can be realized.

[0064] The cavity 100 may include a heater 110, a temperature sensor 120, a heating control unit 130, a coolant inlet portion 140, and a coolant outlet portion 150.

[0065] The heater 110 is configured to heat the substrate disposed above it.

[0066] The heater 110 may include a heating portion 111 and a coolant path 112.

[0067] The heating portion 111 is configured to adjust the temperature of the heater 110. The heating portion 111 may include a resistor body.

[0068] The temperature of the heating portion 111 can be controlled by the heating control unit 130.

[0069] The coolant path 112 represents the path through which the coolant flows in the heater 110. Through heat exchange with the coolant flowing in the coolant path 112, further temperature adjustment of the heater 110 can be achieved.

[0070] The temperature sensor 120 is configured to measure the temperature of the heater 110.

[0071] The heating control unit 130 is configured to control the power of the heating portion 111.

[0072] The coolant inlet portion 140 represents the portion where the coolant flows into the cavity 100 from the heat exchanger 200.

[0073] The coolant outlet portion 150 represents the portion where the coolant is discharged from the cavity 100 to the heat exchanger 200.

[0074] The heat exchanger 200 is configured to adjust the temperature of the heater 110.

[0075] That is, the temperature adjustment of the heater 110 can be achieved through the adjustment of the heating portion 111 controlled by the heating control unit 130 and the adjustment of the heat exchanger 200. At this time, the main function of the temperature adjustment of the heater 110 can be achieved by the heating portion 111.

[0076] The heat exchanger 200 includes a temperature control unit 210 that controls the temperature of the heat exchanger 200.

[0077] The coolant flow is in the heat exchanger 200. The coolant discharged from the heat exchanger 200 can flow into the cavity 100 through the coolant inlet portion 140, and the coolant discharged from the cavity 100 through the coolant discharge portion 150 can flow into the heat exchanger 200.

[0078] Next, a substrate processing method according to an embodiment of the present invention will be described.

[0079] Referring to Figures 3 to 7 , a substrate processing method according to an embodiment of the present invention includes a process recipe and a cleaning recipe that are alternately applied. That is, the substrate processing method according to an embodiment of the present invention can be implemented by repeating a unit process of the cleaning recipe after executing the process recipe.

[0080] The process recipe includes a deposition step (S120), a temperature drop step (S130), a purge step (S140), and a pumping step (S160). In addition, the process recipe may further include a stabilization step (S110) before the deposition step (S120). In addition, the process recipe may further include a home position step (S150) between the purge step (S140) and the pumping step (S160).

[0081] The stabilization step (S110) is a step of stabilizing the gas supply amount used in the deposition step (S120). The stabilization step (S110) may be performed to improve process accuracy and increase the quality of the formed film in the deposition step (S120) as a subsequent process.

[0082] To perform the deposition step (S120), a source gas according to the deposited film is supplied. Compared with the supply amount required for deposition, the initial supply amount of the source gas is significantly increased, which may be a factor in reducing the film quality and deposition process accuracy. Therefore, preferably, there is a time for reducing the source gas supply amount until it stabilizes until the gas supply amount required in the deposition step (S120) is reached. In the stabilization step (S110), no actual deposition occurs, but the source gas is discharged until the source gas supply amount stabilizes.

[0083] The deposition step (S120) is a step of forming a film on the substrate disposed above the heater 110 in the cavity 100.

[0084] The deposition step (S120) can be implemented by various methods such as Atomic Layer Deposition (ALD), Plasma Enhanced Atomic Layer Deposition (PEALD), Chemical Vapor Deposition (CVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), etc.

[0085] The deposition step (S120) can be performed after positioning the heater 110 and the substrate at appropriate positions in the chamber 100 for performing the substrate processing method.

[0086] The temperature drop step (S130) is a step of reducing the temperature of the heater 110.

[0087] In this embodiment, it includes a step of reducing the temperature of the heater 110 during the execution of the process recipe, so that after the execution of the process recipe and until the execution of the cleaning recipe, the temperature of the heater 110 is reduced as much as possible. Therefore, according to this embodiment, when the cleaning recipe is executed after the execution of the process recipe, the long time delay necessarily required for reducing the temperature can be minimized.

[0088] The temperature drop step (S130) can be achieved by adjusting the heating part 111 controlled by the heating control part 130, and further, can be achieved by adjusting the heat exchanger 200.

[0089] The power of the heating part 111 is reduced by the heating control part 130 to lower the temperature of the heating part 111, thereby performing the temperature drop of the heating part 111.

[0090] In addition to this temperature drop of the heating part 111, the temperature drop can also be achieved by the heat exchanger 200. For this, refer to Figure 6 for further detailed description.

[0091] Figure 6 To briefly show a flowchart of a substrate processing method including heat exchanger temperature control according to an embodiment of the present invention.

[0092] Refer to Figure 6, during the execution of the stabilization step (S110) and the deposition step (S120) of the process recipe, the temperature of the heat exchanger 200 can be controlled to T2, and from the temperature drop step (S130) to the end of the process recipe, the temperature of the heat exchanger 200 can be controlled to T1 which is lower than T2. In one embodiment, T2 can be approximately 80 °C and T1 can be approximately 70 °C.

[0093] When the temperature of the heat exchanger 200 is controlled to the relatively low T1, the coolant flowing out of the heat exchanger 200 flows into the heater 110 through the coolant inlet 140, flows through the coolant path 112, and through heat exchange with the heating part 111, the temperature of the heating part 111, that is, the heater 110, can be further reduced.

[0094] The temperature control of the heat exchanger 200 as described above can be achieved by a software function by the temperature control unit 210 provided in the heat exchanger 200.

[0095] The purge step (S140) is a step of removing the source gas and reaction by-products adsorbed on the thin film formed in the deposition step (S120).

[0096] The purge step (S140) can be achieved by supplying a purge gas to the cavity 100, and as the purge gas, nitrogen, argon, etc. can be used.

[0097] The origin positioning step (S150) is a step of repositioning the heater 110 and the substrate provided at a specific position to the original position in order to execute the deposition step (S120).

[0098] The pumping step (S160) is a step of discharging the residual gas in the cavity 100 to the outside.

[0099] Refer to Figure 4 , by executing the process recipe through the process as described above, the temperature drop step (S130) is included in the process recipe, and in addition, a further temperature drop can be achieved through the temperature control of the heat exchanger 200.

[0100] Thus, the temperature of the heater 110 can start to drop from the temperature drop step (S130) and be reduced to the temperature for executing the cleaning recipe. In one embodiment, the temperature of the heater 110 can start to drop from approximately 550 °C in the temperature drop step (S130) and finally drop to approximately 480 °C.

[0101] As Figure 4 shown, compared with Figure 2Compared with the time required for the temperature drop step (S16) shown, the delay time from the end of the process recipe until the cleaning recipe is executed can be significantly reduced.

[0102] In one embodiment, Figure 2 the time required for the temperature drop step (S16) shown is about 15 minutes or more. On the contrary, in Figure 4 the embodiment of the present invention shown, the delay time from the end of the process recipe until the cleaning recipe is executed can be significantly reduced to about 8 - 12 minutes.

[0103] The cleaning recipe includes a cleaning step (S210), a purging step (S220), a temperature rising step (S240), a purging step (S250), and a pumping step (S260). In addition, the cleaning recipe may further include a pre - coating step (S230) between the purging step (S220) and the temperature rising step (S240).

[0104] The cleaning step (S210) is a step of cleaning the interior of the cavity 100. The cleaning step (S210) can be performed by using a cleaning gas to remove the gas or reaction products remaining inside the cavity 100.

[0105] The cleaning step (S210) can be performed by in - situ plasma cleaning using direct plasma formed by an active gas. In in - situ plasma cleaning, a cleaning gas is introduced into the cavity 100, and by applying high - frequency power in a direct radio - frequency (RF) mode, the cleaning gas is excited into a plasma state to generate active substances, and the reactants are released to the outside of the cavity 100 in the form of gaseous substances through the reaction between the active substances and the deposits to remove them.

[0106] The cleaning gas may include carbon fluoride (C x F y ) - based gases or nitrogen fluoride (N x F y ) - based gases.

[0107] The purging step (S220) is a step of removing the cleaning gas and reaction by - products used in the cleaning step (S210).

[0108] The purging step (S220) can be achieved by supplying a purging gas into the cavity 100. As the purging gas, nitrogen, argon, etc. can be used.

[0109] The pre - coating step (S230) is a step of forming a pre - coating film on the inner wall of the cavity 100.

[0110] The pre - coating step (S230) may be performed to prevent the scattering of particles remaining on the inner wall of the cavity 100. In one embodiment, the pre - coating film formed in the pre - coating step (S230) may be formed by plasma - ionizing the same gas as the gas supplied in the deposition step (S120) of the process recipe and forming a film on the inner wall surface of the cavity 100 through this plasma.

[0111] The temperature - rising step (S240) is a step of raising the temperature of the heater 110.

[0112] In this embodiment, including the step of raising the temperature of the heater 110 during the execution of the cleaning recipe, until before the execution of the process recipe after the execution of the cleaning recipe, the temperature of the heater 110 can be raised as high as possible. Therefore, according to this embodiment, when the cleaning recipe is executed after the execution of the process recipe, the long - time delay necessarily required for temperature rising can be minimized.

[0113] The temperature - rising step (S240) can be achieved by the adjustment of the heating part 111 controlled by the heating control part 130, and further, can be achieved by the adjustment of the heat exchanger 200.

[0114] The power of the heating part 111 is increased by the heating control part 130 to increase the temperature of the heating part 111, thereby performing the temperature - rising of the heating part 111.

[0115] In addition to this temperature - rising through the heating part 111, the temperature - rising can also be achieved by the heat exchanger 200. Regarding this, refer to Figure 7 for further detailed description.

[0116] Figure 7 To briefly show a flowchart of a substrate processing method including heat exchanger temperature control according to an embodiment of the present invention.

[0117] Refer to Figure 7 During the execution of the cleaning step (S210), the purging step (S220), and the pre - coating step (S230) of the cleaning recipe, the temperature of the heat exchanger 200 can be controlled to T2, and from the temperature - rising step (S240) to the end of the cleaning recipe, the temperature of the heat exchanger 200 can be controlled to T3 which is higher than T2. In one embodiment, T2 can be about 80 °C and T3 can be about 90 °C.

[0118] When the temperature of the heat exchanger 200 is controlled to a relatively high T3, the coolant flowing out of the heat exchanger 200 flows into the heater 110 through the coolant inlet portion 140, flows through the coolant path 112, and through heat exchange with the heating portion 111, the temperature of the heating portion 111, that is, the heater 110, can be further reduced.

[0119] The temperature control of the heat exchanger 200 as described above can be achieved by a software function by the temperature control portion 210 provided in the heat exchanger 200.

[0120] The purging step (S250) is a step of removing the gas and reaction by-products remaining in the cavity 100.

[0121] The purging step (S250) can be achieved by supplying a purge gas to the cavity 100, and as the purge gas, nitrogen, argon, etc. can be used.

[0122] The pumping step (S260) is a step of discharging the residual gas in the cavity 100 to the outside.

[0123] Refer to Figure 4 , by performing the cleaning recipe through the process as described above, including the temperature rising step (S240) in the process recipe, in addition, a further temperature rise through the temperature control of the heat exchanger 200 can be achieved.

[0124] Thus, the temperature of the heater 110 can start to decrease from the temperature rising step (S240) and increase to the temperature of performing the process recipe. In one embodiment, the temperature of the heater 110 can start to rise from about 480 °C in the temperature rising step (S240) and can rise to about 550 °C.

[0125] As Figure 4 shown, compared with the time required for the temperature rising step (S26) as Figure 2 shown, the delay time from the end of the cleaning recipe until the process recipe is executed can be significantly reduced.

[0126] In one embodiment, Figure 2 the time required for the temperature rising step (S26) as Figure 4 shown is about 15 minutes or more. On the contrary, in the embodiment of the present invention as

[0127] As described above, according to the substrate processing method of an embodiment of the present invention, according to the process execution temperature difference between the process recipe and the cleaning recipe, the delay time required for the rise and fall of the temperature during the execution of subsequent processes can be significantly reduced, thereby contributing to the improvement of production efficiency.

[0128] As described above, the present invention has been described with reference to the embodiments shown in the drawings, but this is only exemplary. It should be understood that various modifications and equivalent other embodiments can be made based on general knowledge in the technical field to which the present technology belongs. Therefore, the true technical protection scope of the present invention should be based on the scope of the appended claims for invention and determined based on the specific content of the above-mentioned invention.

[0129] Industrial Applicability

[0130] The present invention relates to a substrate processing method and can be used in industrial fields related to semiconductor device or display manufacturing.

Claims

1. A substrate processing method, wherein: Including alternate process formulas and cleaning formulas, The process formula comprises: A deposition step of forming a thin film on a substrate disposed above the heater in the chamber; a temperature lowering step, causing the temperature of the heater to decrease; a purging step, purging the interior of the cavity; and a pumping step to discharge the gas inside the cavity, The cleaning formula includes: A cleaning step of cleaning the interior of the cavity; A purging step, purging the interior of the cavity; a temperature increasing step of increasing the temperature of the heater; a purging step, purging the interior of the cavity; and The pumping step discharges the gas in the cavity.

2. The substrate processing method according to claim 1, characterized in that: The process recipe further includes a stabilization step for stabilizing a gas supply amount used in the deposition step before the deposition step.

3. The substrate processing method according to claim 1, characterized in that: The process recipe further includes an origin positioning step of restoring the substrate to an original position between the purging step and the pumping step.

4. The substrate processing method according to claim 1, characterized in that: The cleaning formulation further includes a pre-coating step of forming a pre-coating film on the inner wall of the cavity between the purging step and the temperature raising step.

5. The substrate processing method according to claim 1, characterized in that: The temperature of the heater decreases from the temperature decreasing step until it reaches a temperature for executing the cleaning recipe.

6. The substrate processing method according to claim 1, characterized in that: The delay time from executing the process recipe to executing the cleaning recipe is 8 to 12 minutes.

7. The substrate processing method according to claim 1, characterized in that: The temperature lowering step further includes a heat exchanger temperature control step of lowering the temperature of a heat exchanger connected to the heater.

8. The substrate processing method according to claim 7, characterized in that: The heat exchanger temperature control step is performed by a software function.

9. The substrate processing method according to claim 1, characterized in that: The temperature of the heater is increased from the temperature increasing step and increases to a temperature for executing the process recipe.

10. The substrate processing method according to claim 1, characterized in that: The delay time from executing the cleaning recipe to executing the process recipe is 8 to 12 minutes.

11. The substrate processing method according to claim 1, characterized in that: The temperature increasing step further includes a heat exchanger temperature controlling step of increasing the temperature of the heat exchanger connected to the heater.

12. The substrate processing method according to claim 11, characterized in that: The heat exchanger temperature control step is performed by a software function.

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