Photoelectric device, preparation method of photoelectric device and electronic equipment

Abstract

The invention discloses a photoelectric device, a preparation method of the photoelectric device and electronic equipment, the photoelectric device comprises an anode, a cathode and a first carrier function layer, the anode and the cathode are oppositely arranged, the first carrier function layer is arranged between the anode and the cathode, the first carrier function layer comprises a first sub-layer, a second sub-layer and a third sub-layer, and the first sub-layer, the second sub-layer and the third sub-layer are sequentially stacked. The material of the first sub-layer comprises first inorganic nanoparticles, the material of the second sub-layer comprises a first two-dimensional nanomaterial, and the material of the third sub-layer comprises second inorganic nanoparticles, so that the overall thickness uniformity of the first carrier functional layer can be improved, the distribution uniformity and transmission uniformity of carriers are improved, and the performance of the device is improved. And the service life of the photoelectric device is prolonged.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technologies, and particularly relates to an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device. Background Art

[0002] Optoelectronic devices refer to a class of devices made using the optoelectronic effect of semiconductors, including but not limited to optoelectronic devices, solar cells, or photodetectors. Taking light-emitting devices as an example, light-emitting devices include but are not limited to organic light-emitting diodes 10 (Organic Light-Emitting Diode, OLED) and quantum dot light-emitting diodes (Quantum Dot LightEmitting Diodes, QLED). OLED / QLED has a "sandwich" structure, that is, it includes an anode, a cathode, and a light-emitting layer. Among them, the anode and the cathode are oppositely arranged, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of OLED / QLED is as follows: electrons are injected from the cathode of the device into the light-emitting region, holes are injected from the anode of the device into the light-emitting region, electrons and holes recombine in the light-emitting region to form excitons, and the recombined excitons release photons in the form of radiative transition, thereby emitting light.

[0003] After years of development, optoelectronic devices have made great progress in performance indicators and also shown great potential for application and development. However, there are still deficiencies at present. For example, the device lifetime of optoelectronic devices needs to be further improved. Therefore, how to further improve the device lifetime of optoelectronic devices is of great significance for the application and development of optoelectronic devices. Summary of the Invention

[0004] The present application provides an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device to improve the device lifetime of the optoelectronic device.

[0005] In a first aspect, an embodiment of the present application provides an optoelectronic device, including:

[0006] An anode and a cathode that are oppositely arranged; and

[0007] A first carrier functional layer, arranged between the anode and the cathode;

[0008] Wherein, the first carrier functional layer includes a first sub-layer, a second sub-layer, and a third sub-layer that are sequentially stacked. The material of the first sub-layer includes first inorganic nanoparticles, the material of the second sub-layer includes first two-dimensional nanomaterials, and the material of the third sub-layer includes second inorganic nanoparticles.

[0009] In a second aspect, the present application provides a preparation method of an optoelectronic device, including the following steps:

[0010] Provide a bottom electrode, and form a first carrier functional layer on one side of the bottom electrode; and

[0011] Form a top electrode on the side of the first carrier functional layer away from the bottom electrode;

[0012] Wherein, one of the bottom electrode and the top electrode is an anode, and the other is a cathode; the forming method of the first carrier functional layer includes the steps of: sequentially forming a third sub-layer, a second sub-layer and a first sub-layer on the side of the active layer away from the bottom electrode, or the forming method of the first carrier functional layer includes the steps of: sequentially forming a first sub-layer, a second sub-layer and a third sub-layer on one side of the bottom electrode;

[0013] The material of the first sub-layer includes first inorganic nanoparticles, the material of the second sub-layer includes first two-dimensional nanomaterials, and the material of the third sub-layer includes second inorganic nanoparticles.

[0014] In a third aspect, the present application also provides an electronic device, which includes the optoelectronic device as described in any one of the first aspect, or the optoelectronic device prepared by the preparation method as described in any one of the second aspect.

[0015] The present application provides an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device, having the following technical effects:

[0016] In the optoelectronic device, the first carrier functional layer includes a first sub-layer, a second sub-layer and a third sub-layer which are sequentially stacked. The material of the first sub-layer includes first inorganic nanoparticles, the material of the third sub-layer includes second inorganic nanoparticles, and the material of the second sub-layer includes a first two-dimensional nanomaterial with conductivity, so that the second sub-layer has good thickness uniformity, can improve the overall thickness uniformity of the first carrier functional layer, improve the distribution uniformity and transmission uniformity of carriers, and further improve the device life of the optoelectronic device. Description of the Drawings

[0017] The following combines the drawings and details the specific implementation manners of the present application, and the technical solutions and other beneficial effects of the present application will be obvious.

[0018] Figure 1 It is a schematic structural diagram of the first optoelectronic device provided by an embodiment of the present application;

[0019] Figure 2 It is a schematic structural diagram of the second optoelectronic device provided by an embodiment of the present application;

[0020] Figure 3 It is a schematic structural diagram of the third optoelectronic device provided by an embodiment of the present application;

[0021] Figure 4It is the electroluminescence morphology diagram of the optoelectronic device in Example 1 of the experimental examples of this application;

[0022] Figure 5 It is the electroluminescence morphology diagram of the optoelectronic device in Comparative Example 1 of the experimental examples of this application;

[0023] Figure 6 It is the current efficiency - luminance characteristic curve diagram of the optoelectronic devices in Example 1, Example 3, Example 4 and Comparative Example 1 of the experimental examples of this application.

[0024] The reference numerals are as follows:

[0025] 10: Optoelectronic device, 11: Anode, 12: Cathode, 13: Active layer, 14: First carrier functional layer, 15: Second carrier functional layer, 141: First sub - layer, 142: Second sub - layer, 143: Third sub - layer, 151: Hole injection layer, 152: Hole transport layer, 153: Fourth sub - layer, 154: Fifth sub - layer, 155: Sixth sub - layer. Detailed implementation manners

[0026] Next, the technical solutions in the embodiments of this application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of this application. Obviously, the described embodiments are only a part of the embodiments of this application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.

[0027] Unless otherwise defined, all professional and scientific terms used herein have the same meaning as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to the described content can be applied to the present invention. The preferred methods and materials described herein are only for illustrative purposes and do not limit the content of this application.

[0028] It should be noted that the description order of the following embodiments does not limit the preferred order of the embodiments. The various embodiments of this application can exist in a range form. It should be understood that the description in a range form is only for convenience and brevity and should not be construed as a rigid limitation on the scope of the present invention; therefore, it should be considered that the described range description has specifically disclosed all possible sub - ranges and single values within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub - ranges such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Additionally, whenever a numerical range is indicated herein, it means including any cited number (fraction or integer) within the indicated range.

[0029] In this application, unless otherwise specified, the orientation terms such as "upper" and "lower" generally refer to the upper and lower sides in the actual use or working state of the optoelectronic device, specifically the drawing direction in the attached drawings; while "inner" and "outer" refer to the outline of the optoelectronic device. The terms first, second, third, etc. are only used as labels without imposing numerical requirements or establishing an order.

[0030] In this application, for descriptions such as "layer A is formed on one side of layer B", "layer A is formed on the side of layer B away from layer C", or similar descriptions, it can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or it can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacer structure layers can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B", "layer A is disposed on the side of layer B away from layer C" can mean that layer A is in direct contact with layer B, or it can mean that other spacer structure layers are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and one or more spacer structure layers are provided between layer A and layer C, or one or more spacer structure layers are provided between layer A and layer B and layer A is in direct contact with layer C.

[0031] As used in this application, the term "comprising" means "including but not limited to".

[0032] As used in this application, the term "and / or" is used to describe the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can mean: A exists alone, A and B exist simultaneously, or B exists alone. Where A and B can be singular or plural.

[0033] As used in this application, the term "at least one (piece)" means one (piece) or more than one (piece), and "more than one (piece)" means two (pieces) or more than two (pieces). The term "at least one (piece)", "at least one (piece) below" or similar expressions refer to any combination of these items, including any combination of a single (piece) or multiple (pieces). For example, "at least one (piece) of a, b or c" or "at least one (piece) of a, b and c" can both be expressed as: a, b, c, a - b (that is, a and b), a - c, b - c or a - b - c, where a, b and c can each be a single (piece) or multiple (pieces).

[0034] In optoelectronic devices, inorganic nanoparticles (such as metal oxide nanoparticles) are usually used as the material of the carrier functional layer. However, due to the "aggregation" problem of metal oxide nanoparticles in solution, the carrier functional layer prepared by using metal oxide nanoparticles as raw materials and the solution method has the problem of uneven distribution of nanoparticles. Especially when the solution method is the inkjet printing method, nanoparticle accumulation is very likely to occur after the ink droplets spread in the pixel area, resulting in poor film formation quality of the carrier functional layer, poor thickness uniformity of the carrier functional layer, and thus uneven current distribution in the optoelectronic device. The reason is that: compared with the carrier transport in the thicker region, the carrier transport rate in the thinner region is faster, which will cause the problem of excessive local current density, resulting in uneven carrier distribution and uneven aging region in the optoelectronic device, thus having an adverse impact on the device life and performance stability of the optoelectronic device.

[0035] Based on this, the present application provides an optoelectronic device, which can be a normal structure or an inverted structure. As Figures 1 to 3 shown, the optoelectronic device 10 includes an anode 11, a cathode 12, and a first carrier functional layer 14. Among them, the anode 11 and the cathode 12 are disposed opposite to each other, and the first carrier functional layer 14 is disposed between the anode 11 and the cathode 12. Among them, the first carrier functional layer 14 includes a first sub-layer 141, a second sub-layer 142, and a third sub-layer 143 that are sequentially stacked. The material of the first sub-layer 141 includes first inorganic nanoparticles, the material of the second sub-layer 142 includes first two-dimensional nanomaterials, and the material of the third sub-layer 143 includes second inorganic nanoparticles. The first sub-layer 141 is closer to the active layer 13 than the third sub-layer 143.

[0036] In the optoelectronic device 10 of the embodiment of the present application, the first carrier functional layer 14 includes a first sub-layer 141, a second sub-layer 142, and a third sub-layer 143 that are sequentially stacked. The material of the first sub-layer 141 includes first inorganic nanoparticles, and the material of the second sub-layer 142 includes first two-dimensional nanomaterials, so that the second sub-layer 142 has good thickness uniformity, can improve the overall thickness uniformity of the first carrier functional layer 14, improve the distribution uniformity and transport uniformity of carriers, and further improve the device life of the optoelectronic device.

[0037] In some embodiments of the present application, continue as Figures 1 to 3As shown, the optoelectronic device 10 further includes an active layer 13, and the active layer 13 is disposed between the first carrier functional layer 14 and the anode 11, or between the first carrier functional layer 14 and the cathode 12. It can be understood that when the optoelectronic device 10 is a light-emitting device, the active layer 13 is a light-emitting layer; when the optoelectronic device 10 is a solar cell, the active layer 13 is a light absorption layer. The active layer 13 can be a single-layer structure or a multi-layer structure, and the thickness of the active layer 13 is, for example, 10 nm to 100 nm.

[0038] In some embodiments of the present application, the active layer 13 is a light-emitting layer, and the material of the active layer 13 includes one or more of an organic light-emitting material and a quantum dot.

[0039] Among them, the organic light-emitting material includes, but is not limited to, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridine iridium(III), 4,4',4”-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridine iridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent material, TTPX fluorescent material, TBRb fluorescent material, DBP fluorescent material, delayed fluorescence material, TTA material, thermally activated delayed material, polymer containing B-N covalent bond, hybrid local charge transfer excited state material, exciplex luminescent material, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives, etc.

[0040] The quantum dot includes, but is not limited to, one or more of a red quantum dot, a green quantum dot, and a blue quantum dot, and the quantum dot includes, but is not limited to, one or more of a single-component quantum dot, a core-shell structure quantum dot, an inorganic perovskite quantum dot, an organic perovskite quantum dot, and an organic-inorganic hybrid perovskite quantum dot. The average particle size of the quantum dot can be 2 nm to 20 nm, for example, it can be 2 nm, 4 nm, 6 nm, 8 nm, 10 nm, 12 nm, 15 nm, 20 nm, or a value between any two of the foregoing values.

[0041] For the single-component quantum dot and the core-shell structure quantum dot, the material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot, or the material of the shell of the core-shell structure quantum dot includes, but is not limited to, at least one of II-VI group compounds, III-V group compounds, III-VI group compounds, IV-VI group compounds, or I-III-VI group compounds, and the shell layer of the core-shell structure quantum dot includes one or more layers.

[0042] Among them, the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe, and / or the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb, and / or the III-VI group compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3, and / or the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe, and / or the I-III-VI group compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2. It should be noted that for the materials of the aforementioned single-component quantum dots, or the cores of core-shell quantum dots, or the shells of core-shell quantum dots, the chemical formulas provided only indicate the elemental composition and do not indicate the content of each element. For example, CdZnSe only indicates that it is composed of three elements, Cd, Zn, and Se. If the content of each element is to be indicated, it corresponds to Cd x Zn 1-x Se, 0 < x < 1.

[0043] For inorganic perovskite quantum dots, the general structural formula of the inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0044] For organic perovskite quantum dots, the general structural formula of the organic perovskite quantum dots is CMX3, where C is formamidinium, M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0045] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, and M includes but is not limited to Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe2+ , Ge 2+ , Yb 2+ or Eu 2+ , where X is a halogen anion, including but not limited to Cl - , Br - or I - .

[0046] It should be noted that when the material of the active layer 13 includes quantum dots, ligands can also be connected to the surface of the quantum dots. The ligands include but are not limited to fatty carboxylic acid ligands with C1 - C 30 , aromatic carboxylic acid ligands with C6 - C 30 , fatty thiol ligands with C1 - C 30 , thiol aromatic ligands with C6 - C 30 , fatty amine ligands with C1 - C 30 , aromatic amine ligands with C6 - C 30 , fatty phosphine ligands with C1 - C 30 , aromatic phosphine ligands with C6 - C 30 , aromatic phosphate ligands with C6 - C 30 and one or more of halogen ligands.

[0047] Among them, the C1 - C 30 fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; the C6 - C 30 aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid, and 1 - naphthoic acid. The C1 - C 30 fatty thiol ligands include but are not limited to one or more of hexanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol, dodecanethiol, hexadecanethiol, and octadecanethiol. The C6 - C 30 thiol aromatic ligands include but are not limited to one or more of benzenethiol, triphenylmethanethiol, and p - terphenyl - 4,4'' - dithiol. The C1 - C 30 fatty amine ligands include but are not limited to one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, octadecylamine, and oleylamine. The C6 - C 30 aromatic amine ligands include but are not limited to one or more of aniline, indanpropylamine, 4 - octylaniline, and benzidine. The C1 - C 30The fatty phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6-C 30 The aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, C6-C 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. The halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0048] To further improve the uniformity of the carrier distribution, in some embodiments of the present application, the thickness of the first sublayer 141 is less than the thickness of the third sublayer 143. Taking the optoelectronic device 10 as a light-emitting device as an example, since the thickness of the first sublayer 141 is thinner than that of the third sublayer 143, the influence of the thickness uniformity of the first sublayer 141 on the performance of the active layer 13 is smaller than that of the thickness uniformity of the third sublayer 143 on the performance of the active layer 13. Carriers are injected from the electrodes (anode 11 or cathode 12) of the optoelectronic device 10 into the active layer 13 via the third sublayer 143, the second sublayer 142, and the first sublayer 141. Among them, after the carriers passing through the third sublayer 143 enter the second sublayer 142, the lateral transport of the carriers is greater than the longitudinal transport, so that the carriers are quickly redistributed laterally in the second sublayer 142, further improving the uniformity of the carrier distribution and the transport uniformity, and can further improve the problem of uneven current distribution caused by the uneven thickness of the third sublayer 143, thereby further improving the device lifetime of the optoelectronic device 10.

[0049] To balance the improvement of the device lifetime and optoelectronic performance of the optoelectronic device 10 and control the manufacturing cost of the optoelectronic device 10, in some embodiments of the present application, the thickness of the first sublayer 141 is 3 nm to 10 nm, such as 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a value between any two of the foregoing values; and / or, the thickness of the second sublayer 142 is 10 nm to 50 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, or a value between any two of the foregoing values; and / or, the thickness of the third sublayer 143 is 20 nm to 100 nm, such as 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or a value between any two of the foregoing values.

[0050] In some embodiments of the present application, the average sheet diameter of the first two-dimensional nanomaterial is 50 nm to 200 nm, such as 50 nm, 80 nm, 100 nm, 120 nm, 150 nm, 180 nm, 200 nm, or a value between any two of the foregoing values, so as to further improve the thickness uniformity of the second sub-layer 142, thereby further improving the problem of uneven current distribution.

[0051] In order to further improve the conductivity of the first carrier functional layer 14, in some embodiments of the present application, the conductivity of the first two-dimensional nanomaterial at 25 °C is not less than 100 S / m, such as not less than 150 S / m, not less than 200 S / m, not less than 300 S / m, not less than 500 S / m, or not less than 1000 S / m.

[0052] In some embodiments of the present application, the first two-dimensional nanomaterial is selected from one or more of graphene, reduced graphene oxide, transition metal dichalcogenides, phosphorene, and black phosphorus.

[0053] In order to further improve the performance stability of the first carrier functional layer 14, in some embodiments of the present application, the first inorganic nanoparticles and the second inorganic nanoparticles are the same.

[0054] In some embodiments of the present application, the average particle diameter of the first inorganic nanoparticles is 2 nm to 20 nm, and / or the average particle diameter of the second inorganic nanoparticles is 2 nm to 20 nm.

[0055] In some embodiments of the present application, continue to refer to Figure 1 , the first carrier functional layer 14 is an electron functional layer, and the first inorganic nanoparticles and the second inorganic nanoparticles are independently selected from non-doped first metal oxides and / or doped second metal oxides respectively. Among them, the non-doped first metal oxides include but are not limited to one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; the doped second metal oxide is a host metal oxide doped with a first doping element, and the host metal oxides include but are not limited to ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, or ZrO2, and the first doping elements include but are not limited to one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn. The molar percentage of the first doping element in the doped second metal oxide is, for example, not higher than 5%, not higher than 10%, not higher than 20%, not higher than 30%, or not higher than 50%. The doped second metal oxides include but are not limited to one or more of magnesium zinc oxide, calcium zinc oxide, zirconium zinc oxide, gallium zinc oxide, aluminum zinc oxide, lithium zinc oxide, titanium zinc oxide, yttrium zinc oxide, indium tin oxide, and lithium titanium oxide, such as Zn (1-x) Mgx O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O, In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0 < x ≤ 0.5.

[0056] In some embodiments of the present application, in order to further improve the interface stability between the first carrier functional layer 14 and the active layer 13, and thus further improve the performance stability of the optoelectronic device, the material of the second sub-layer 142 further includes metal compounds, and the metal compounds are selected from one or more of metal hydroxides and metal salts. The metal elements in the metal hydroxides and the metal elements in the metal salts are independently selected from one or more of Li, Na, K, Mg, Zn, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn. Among them, the anions generated by the ionization of the metal salts are, for example, selected from one or more of acetate ions, carbonate ions, bicarbonate ions, halogen anions, nitrate ions, sulfate ions, and phosphate ions.

[0057] In some embodiments of the present application, in the second sub-layer 142, the mass ratio of the first two-dimensional nanomaterial to the metal compound is 1:(0.005 - 0.1), for example, it can be 1:0.005, 1:0.008, 1:0.01, 1:0.03, 1:0.05, 1:0.05, 1:0.1, or a value between any two of the foregoing ratios, so as to improve the interface stability between the first carrier functional layer 14 and the active layer 13 while enhancing the carrier transport performance of the first carrier functional layer 14.

[0058] In order to further improve the comprehensive performance of the optoelectronic device 10, in some embodiments of the present application, continue to refer to Figure 1, the optoelectronic device 10 further includes a second carrier functional layer 15 disposed between the first carrier functional layer 14 and the anode 11, and the second carrier functional layer 15 is a hole functional layer. The second carrier functional layer 15 may be a single-layer structure or a multi-layer structure, and the thickness of the second carrier functional layer 15 is, for example, 10 nm to 100 nm. The second carrier functional layer 15 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the second carrier functional layer 15 including a hole injection layer, a hole transport layer, and an electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 11 than the electron blocking layer; for the second carrier functional layer 15 including a hole transport layer and an electron blocking layer, the hole transport layer is closer to the anode 11 than the electron blocking layer. As an example, please refer to Figure 1 , the second carrier functional layer 15 is composed of a hole injection layer 151 and a hole transport layer 152 which are stacked, and the hole injection layer 151 is closer to the anode 11 than the hole transport layer 152.

[0059] Among them, the material of the second carrier functional layer 15 includes, but is not limited to, one or more of an undoped first inorganic compound, a doped second inorganic compound, and an organic compound. Among them, the organic compound includes, but is not limited to, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (abbreviation: PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium oxyphthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), polypyrrole (CAS No. 30604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviation: PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazolyl)biphenyl (abbreviation: CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline] (abbreviation: TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)] (abbreviation: TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorene-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4''-tris(carbazol-9-yl)triphenylamine (abbreviation: TCTA, CAS No. 139092-78-7), 4,4',4'-tris(2-naphthylphenylamino)triphenylamine (CAS No. 185690-41-9), N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviation: TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviation: Spiro-TPD,One or more of: 1033035-83-4), N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (abbreviation: PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (abbreviation: Spiro-omeTAD, CAS No. 207739-72-8); and / or, the non-doped first inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), and tungsten sulfide (such as WS2); and / or, the doped second inorganic compound is a host inorganic compound doped with a second doping element, and the host inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), p-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2), and tungsten sulfide (such as WS2), and / or the second doping element includes but is not limited to one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.,

[0060] It can be understood that when the second carrier functional layer 15 contains multiple materials and the second carrier functional layer 15 is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or some in the same layer, and the multiple materials are independently selected from one or more of the non-doped first inorganic compound, the doped second inorganic compound, and the organic compound. For example, when the second carrier functional layer 15 is composed of a hole injection layer and a hole transport layer arranged in a stack, the materials of the second carrier functional layer 15 include PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers respectively, the material of the hole injection layer is PEDOT:PSS, and the material of the hole transport layer is TFB.

[0061] Further, when the material of the second carrier functional layer 15 includes inorganic nanoparticles, in order to optimize the interfacial stability between the second carrier functional layer 15 and an adjacent functional layer (such as the active layer 13), and to improve the problem of uneven current distribution caused by the uneven thickness of the second carrier functional layer 15, in some embodiments of the present application, as Figure 3 shown, the second carrier functional layer 15 includes a fourth sub-layer 153, a fifth sub-layer 154, and a sixth sub-layer 155 that are stacked in sequence. The material of the fourth sub-layer 153 includes third inorganic nanoparticles, the material of the fifth sub-layer 154 includes a second two-dimensional nanomaterial, and the material of the sixth sub-layer 155 includes fourth inorganic nanoparticles.

[0062] In order to further improve the uniformity of the distribution of carriers, in some embodiments of the present application, the thickness of the fourth sub-layer 153 is less than the thickness of the sixth sub-layer 155; and / or, the fourth sub-layer 153 is closer to the cathode 12 than the sixth sub-layer 155.

[0063] In order to balance the improvement of the device lifetime and optoelectronic performance of the optoelectronic device 10, as well as to control the manufacturing cost of the optoelectronic device 10, in some embodiments of the present application, the thickness of the fourth sub-layer 153 is 3 nm to 10 nm, such as 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, or a value between any two of the foregoing values; and / or, the thickness of the fifth sub-layer 154 is 10 nm to 50 nm, such as 10 nm, 20 nm, 30 nm, 40 nm, 50 nm, or a value between any two of the foregoing values; and / or, the thickness of the sixth sub-layer 155 is 20 nm to 100 nm, such as 20 nm, 30 nm, 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, or a value between any two of the foregoing values.

[0064] In order to further improve the conductivity of the second carrier functional layer 15, in some embodiments of the present application, the conductivity of the second two-dimensional nanomaterial is not less than 100 S / m, such as not less than 150 S / m, not less than 200 S / m, not less than 300 S / m, not less than 500 S / m, or not less than 1000 S / m.

[0065] In some embodiments of the present application, the second two-dimensional nanomaterial is selected from one or more of graphene, reduced graphene oxide, transition metal dichalcogenides, phosphorene, and black phosphorus to further improve the conductivity of the second carrier functional layer 15.

[0066] In some embodiments of the present application, the average particle size of the third inorganic nanoparticles is 2 nm to 20 nm, and / or the average particle size of the fourth inorganic nanoparticles is 2 nm to 20 nm.

[0067] In order to further improve the performance stability of the second carrier functional layer 15, in some embodiments of the present application, the third inorganic nanoparticles and the fourth inorganic nanoparticles are the same. The third inorganic nanoparticles and the fourth inorganic nanoparticles are respectively and independently selected from non-doped third metal oxides and / or doped fourth metal oxides, for example. The non-doped third metal oxides are selected from one or more of NiO, MoO3, WO3, V2O5, CrO3, CuO, and Cu2O; and / or, the doped fourth metal oxide is a second host metal oxide doped with a third doping element. The second host metal oxide is selected from NiO, MoO3, WO3, V2O5, CrO3, CuO, or Cu2O, and the third doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

[0068] As an alternative embodiment, in some embodiments of the present application, continue to refer to Figure 2 , the first carrier functional layer 14 is a hole functional layer. The first inorganic nanoparticles and the second inorganic nanoparticles are respectively and independently selected from non-doped third metal oxides and / or doped fourth metal oxides, for example. The non-doped third metal oxides are selected from one or more of NiO, MoO3, WO3, V2O5, CrO3, CuO, and Cu2O; and / or, the doped fourth metal oxide is a second host metal oxide doped with a third doping element. The second host metal oxide is selected from NiO, MoO3, WO3, V2O5, CrO3, CuO, or Cu2O, and the third doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

[0069] In order to further improve the comprehensive performance of the optoelectronic device 10, in some embodiments of the present application, continue to refer to Figure 2 , the optoelectronic device 10 further includes a second carrier functional layer 15 disposed between the first carrier functional layer 14 and the cathode 12. The second carrier functional layer 15 is an electron functional layer, and the material of the electron functional layer includes a non-doped first metal oxide and / or a doped second metal oxide. The non-doped first metal oxide and the doped second metal oxide are both described above and will not be elaborated here.

[0070] It can be understood that the electronic functional layer can be a single-layer structure or a multi-layer structure. The electronic functional layer includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For an electronic functional layer including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 12 than the hole blocking layer; for an electronic functional layer including an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode 12 than the electron transport layer; for an electronic functional layer including an electron transport layer and a hole blocking layer, the electron transport layer is closer to the cathode 12 than the hole blocking layer. When the electronic functional layer contains multiple materials and the electronic functional layer is a multi-layer structure, the multiple materials can all be in the same layer, or in different layers respectively, or some in the same layer. It should be noted that, in order to optimize the interface stability between the electronic functional layer and the active layer 13 and improve the problem of uneven current distribution caused by the uneven thickness of the electronic functional layer, in some embodiments of the present application, the electronic functional layer can be the three-layer structure described above.

[0071] In order to further improve the optoelectronic performance and device life of the optoelectronic device 10, in some embodiments of the present application, the materials of the anode 11 and the cathode 12 independently include one or more of a metal, a carbon material, and a fifth metal oxide. Among them, the metal includes, but is not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg; the carbon material includes, but is not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers; the fifth metal oxide can be doped or undoped. The doped fifth metal oxide includes, but is not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), and magnesium-doped zinc oxide (MZO), and the undoped fifth metal oxide includes, but is not limited to, one or more of TiO2, SnO2, ZnO, and In2O3.

[0072] It should be noted that the anode 11 and the cathode 12 can also be composite electrodes respectively. The composite electrode has a structure similar to a "sandwich", and the materials of the upper layer and the bottom layer are respectively doped or undoped third metal oxides, and the material of the middle layer is a metal. Examples include one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thicknesses of the anode 11 and the cathode 12 are, for example, independently selected from 20 nm to 300 nm each other.

[0073] The embodiment of the present application also provides a preparation method of an optoelectronic device, which can be used to prepare any one of the optoelectronic devices described above. The preparation method of the optoelectronic device includes the following steps:

[0074] S1. Provide a bottom electrode and form a first carrier functional layer on one side of the bottom electrode;

[0075] S2. Form a top electrode on the side of the first carrier functional layer away from the bottom electrode.

[0076] Among them, one of the bottom electrode and the top electrode is the anode, and the other is the cathode. The formation method of the first carrier functional layer includes the steps of: forming a third sub-layer, a second sub-layer, and a first sub-layer in sequence on the side of the active layer away from the bottom electrode, or the formation method of the first carrier functional layer includes the steps of: forming a first sub-layer, a second sub-layer, and a third sub-layer in sequence on one side of the bottom electrode.

[0077] In some embodiments of the present application, the preparation method of the optoelectronic device further includes the step of: forming an active layer between the first carrier functional layer and the anode, or forming an active layer between the first carrier functional layer and the cathode. Optionally, the active layer is a light-emitting layer, and the material of the light-emitting layer includes an organic light-emitting material and / or quantum dots.

[0078] It should be noted that the structural compositions of the respective functional layers in the optoelectronic device are all referred to the descriptions in the foregoing text. And except for the first carrier functional layer, the preparation methods of the other respective functional layers in the optoelectronic device include, but are not limited to, chemical methods and / or physical methods. Among them, the chemical methods include, but are not limited to, one or more of chemical vapor deposition method, sequential ionic layer adsorption and reaction method, anodic oxidation method, electrodeposition method, and coprecipitation method. The physical methods include, but are not limited to, physical coating method and solution method. The physical coating method includes, but is not limited to, one or more of thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion coating method, physical vapor deposition method, atomic layer deposition method, and pulsed laser deposition method. The solution method includes, but is not limited to, one or more of spin coating method, printing method, blade coating method, dip coating method, immersion method, spraying method, roll coating method, casting method, slot die coating method, and bar coating method.

[0079] In addition, when the first carrier functional layer is formed on the side of the active layer away from the bottom electrode, first deposit a first sub-layer with a relatively thin thickness on the side of the active layer away from the bottom electrode. Based on the variation rules of the magnitudes of gravity, van der Waals force, and solution viscosity force with the distance between nanoparticles, the first inorganic nanoparticles can be evenly distributed on the surface of the active layer, effectively improving the problem of nanoparticle accumulation caused by solvent evaporation, capillary action, etc., so that the first sub-layer has good film-forming quality. Subsequently, deposit a second sub-layer on the side of the first sub-layer away from the active layer. The second sub-layer has good conductivity and thickness uniformity, which is beneficial to improving the overall thickness uniformity of the first carrier functional layer, thereby improving the problem of uneven nanoparticle distribution existing in the first carrier functional layer prepared by the solution method and effectively improving the film-forming quality of the first carrier functional layer. Then, deposit a third sub-layer on the side of the second sub-layer away from the first sub-layer to ensure that the first carrier functional layer has good carrier transport performance.

[0080] In some embodiments of the present application, the formation method of the third sub-layer includes the steps of: depositing a first dispersion liquid including second inorganic nanoparticles, and then performing a first drying treatment on the deposited first dispersion liquid to obtain the third sub-layer; and / or, the formation method of the first sub-layer includes the steps of: depositing a second dispersion liquid including first inorganic nanoparticles, and then performing a second drying treatment on the deposited second dispersion liquid to obtain the first sub-layer; and / or, the formation method of the second sub-layer includes the steps of: depositing a third dispersion liquid including first two-dimensional nanomaterials, and then performing a third drying treatment on the deposited third dispersion liquid to obtain the second sub-layer.

[0081] The deposition methods of the first dispersion, the second dispersion, and the third dispersion include, but are not limited to, one or more of spin coating, printing, blade coating, dip coating, soaking, spraying, roll coating, casting, slot die coating, and bar coating. The dispersants of the first dispersion, the second dispersion, and the third dispersion are independently selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds, amide compounds, and sulfone compounds. Among them, alkanes include, but are not limited to, one or more of nonane, decane, dodecane, terpane, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane, and cyclopentane; aromatic hydrocarbons include, but are not limited to, one or more of diethylbenzene, mesitylene, propylbenzene, cumene, p-cymene, butylbenzene, and 1-methylnaphthalene or indene; halogenated alkanes include, but are not limited to, one or more of dichloromethane, chloroform, and carbon tetrachloride; alcohol compounds include, but are not limited to, one or more of methanol, ethanol, propanol, butanol, ethylene glycol, and glycerol; ether compounds include, but are not limited to, ethylene glycol monomethyl ether; furan compounds include, but are not limited to, tetrahydrofuran; pyridine compounds include, but are not limited to, pyridine; amide compounds include, but are not limited to, N,N-dimethylformamide; sulfone compounds include, but are not limited to, dimethyl sulfoxide. It can be understood that the first dispersion, the second dispersion, and the third dispersion may further include one or more additives that promote the dispersion or dissolution of the material, and the additives include, but are not limited to, surfactants.

[0082] In order to balance the improvement of the density of the third sub-layer and the improvement of the dispersion performance of the second inorganic nanoparticles in the dispersant, in some embodiments of the present application, the concentration of the second inorganic nanoparticles in the first dispersion is 0.5 mg / mL to 50 mg / mL. Similarly, in order to balance the density of the first sub-layer and the improvement of the dispersion performance of the first inorganic nanoparticles in the dispersant, in some embodiments of the present application, the concentration of the first inorganic nanoparticles in the second dispersion is 0.5 mg / mL to 50 mg / mL. Similarly, in order to balance the density of the second sub-layer and the improvement of the dispersion performance of the first two-dimensional nanomaterials in the dispersant, in some embodiments of the present application, the concentration of the first two-dimensional nanomaterials in the third dispersion is 0.5 mg / mL to 50 mg / mL.

[0083] The first drying treatment, the second drying treatment, and the third drying treatment respectively include, but are not limited to, one or more of natural air drying treatment, heat treatment, vacuum drying treatment, laser annealing treatment, electron beam annealing treatment, atomic annealing treatment, and microwave irradiation annealing treatment. It should be noted that, in order to balance improving the film-forming quality of the first sub-layer and enhancing the annealing adequacy of the first sub-layer to improve the performance stability of the first inorganic nanoparticles, in some embodiments of the present application, the second drying treatment includes the steps of: first allowing the deposited second dispersion to stand under low pressure (e.g., less than 10 Pa), and then performing heat treatment; similarly, in order to balance improving the film-forming quality of the third sub-layer and enhancing the annealing adequacy of the third sub-layer to improve the performance stability of the second inorganic nanoparticles, in some embodiments of the present application, the first drying treatment includes the steps of: first allowing the deposited first dispersion to stand under low pressure (e.g., less than 10 Pa), and then performing heat treatment.

[0084] In order to further improve the thickness uniformity and compactness of the third sub-layer, in some embodiments of the present application, after the steps of the first drying treatment and before the step of obtaining the third sub-layer, the method for forming the third sub-layer further includes the step of: placing the first cured film obtained by the first drying treatment in an air atmosphere for a first atmosphere treatment, and the relative humidity of the air atmosphere is 30% to 90%. During the first atmosphere treatment, under the action of water and oxygen, a phenomenon of dissolution and recrystallization occurs between the second inorganic nanoparticles, having an effect similar to cross-linking, which is beneficial to improving the thickness uniformity and compactness of the third sub-layer. The time of the first atmosphere treatment is, for example, 1 min to 5 min.

[0085] In order to further improve the thickness uniformity and compactness of the first sub-layer, in some embodiments of the present application, after the steps of the second drying treatment and before the step of obtaining the first sub-layer, the method for forming the first sub-layer includes the step of: performing a second atmosphere treatment on the second cured film obtained by the second drying treatment in an air atmosphere, and the relative humidity of the air atmosphere is 30% to 90%. The time of the second atmosphere treatment is, for example, 1 min to 5 min.

[0086] In some embodiments of the present application, to reduce the interfacial barrier between the second sub-layer and the first sub-layer or reduce the interfacial barrier between the second sub-layer and the third sub-layer, the third cured film obtained by the third drying treatment is subjected to oxygen plasma treatment. Specifically, when the first sub-layer, the second sub-layer, and the third sub-layer are formed in sequence, introducing oxygen on the surface of the second sub-layer close to the third sub-layer based on the oxygen plasma treatment can promote the coordination bonding between the surface of the second sub-layer close to the third sub-layer and the surface of the third sub-layer close to the second sub-layer. For example, when the second inorganic nanoparticles are metal oxides, the oxygen on the surface of the second sub-layer close to the third sub-layer can coordinate and connect with the dangling bonds on the surface of the metal oxides, thereby reducing the interfacial barrier between the second sub-layer and the third sub-layer; similarly, when the third sub-layer, the second sub-layer, and the first sub-layer are formed in sequence, introducing oxygen on the surface of the second sub-layer close to the first sub-layer based on the oxygen plasma treatment can promote the coordination bonding between the surface of the second sub-layer close to the first sub-layer and the surface of the first sub-layer close to the second sub-layer, thereby reducing the interfacial barrier between the second sub-layer and the first sub-layer. It can be understood that when the optoelectronic device is a quantum dot light-emitting diode with a normal structure and the first carrier functional layer is an electron functional layer, the interfacial barrier between the second sub-layer and the third sub-layer has a relatively low barrier, but there is a certain barrier between the second sub-layer and the active layer, which has the effect of blocking electrons from quickly passing through the second sub-layer, achieving the purpose of further promoting electron homogenization, and being beneficial to promoting the electron-hole transport balance, thereby improving the optoelectronic performance and device lifetime of the quantum dot light-emitting diode.

[0087] In some embodiments of the present application, the step of subjecting the third cured film obtained by the third drying treatment to oxygen plasma treatment includes: placing the third cured film obtained by the third drying treatment in the treatment chamber of the plasma generating device, and treating the third cured film with oxygen plasma generated by the discharge of the generating gas including oxygen, wherein the pressure in the treatment chamber is 0.1 Pa to 100 Pa, the output frequency of the plasma generating device is 100 W to 2000 W, and the time of the oxygen plasma treatment is 0.5 min to 10 min.

[0088] In some embodiments of the present application, to further improve the interfacial stability between the first carrier functional layer and the active layer, thereby further improving the device lifetime and performance stability of the optoelectronic device, when the first carrier functional layer is an electron functional layer, the third dispersion liquid further includes a metal compound, and the metal compound is as described above.

[0089] In order to balance improving the solubility of metal compounds in the third dispersion liquid and enhancing the carrier transport performance of the second sub-layer, in some embodiments of the present application, the concentration of metal cations ionized from the metal compounds in the third dispersion liquid is 0.25 mmol / mL to 40 mmol / mL, such as 0.25 mmol / mL, 0.5 mmol / mL, 1 mmol / mL, 2.5 mmol / mL, 5 mmol / mL, 10 mmol / mL, 20 mmol / mL, 30 mmol / mL, 40 mmol / mL, or a value between any two of the foregoing values.

[0090] In some embodiments of the present application, when the first carrier functional layer is an electron functional layer, the method for preparing the optoelectronic device further includes the step of forming a second carrier functional layer between the anode and the first carrier functional layer, and the second carrier functional layer is a hole functional layer. The structural composition of the hole functional layer refers to the description above. It can be understood that when the bottom electrode is the anode, the top electrode is the cathode, and the optoelectronic device includes an active layer, first form the second carrier functional layer on one side of the bottom electrode, and then form the active layer on the side of the second carrier functional layer away from the bottom electrode; when the bottom electrode is the cathode and the top electrode is the anode, first form the active layer on the side of the first carrier functional layer away from the bottom electrode, and then form the second carrier functional layer on the side of the active layer away from the first carrier functional layer.

[0091] Further, in order to optimize the interfacial stability between the second carrier functional layer 15 and the active layer 13, and to improve the problem of uneven current distribution caused by the uneven thickness of the second carrier functional layer 15, in some embodiments of the present application, the bottom electrode is the anode and the top electrode is the cathode, and the method for forming the second carrier functional layer includes the steps of sequentially forming a sixth sub-layer, a fifth sub-layer, and a fourth sub-layer on one side of the bottom electrode; or, the bottom electrode is the cathode and the top electrode is the anode, and the method for forming the second carrier functional layer includes the steps of sequentially forming a fourth sub-layer, a fifth sub-layer, and a sixth sub-layer on the side of the first carrier functional layer away from the bottom electrode. Among them, the structural compositions of the sixth sub-layer, the fifth sub-layer, and the fourth sub-layer all refer to the description above, and the sixth sub-layer, the fifth sub-layer, and the fourth sub-layer can all be prepared by solution method.

[0092] As an alternative embodiment, in some embodiments of the present application, when the first carrier functional layer is a hole functional layer, the method for manufacturing an optoelectronic device further includes the step of forming a second carrier functional layer between the anode and the first carrier functional layer, and the second carrier functional layer is an electron functional layer. The structural composition of the electron functional layer refers to the description above. It can be understood that when the bottom electrode is the anode, the top electrode is the cathode, and the optoelectronic device includes an active layer, the active layer is first formed on the side of the first carrier functional layer away from the bottom electrode, and then the second carrier functional layer is formed on the side of the active layer away from the first carrier functional layer; when the bottom electrode is the cathode and the top electrode is the anode, the second carrier functional layer is first formed on one side of the bottom electrode, and then the active layer is formed on the side of the second carrier functional layer away from the bottom electrode.

[0093] After each film layer of the optoelectronic device is prepared, a packaging treatment process is also required. The packaging treatment can be carried out by using common machine packaging or manual packaging. In the environment of the packaging treatment, the oxygen content and the water content are both lower than 0.1 ppm to ensure the stability of the optoelectronic device. It should be noted that in existing optoelectronic devices, organic acid resins (such as acrylic resins) are common optoelectronic device packaging materials. When the material of the electron functional layer in the optoelectronic device includes metal oxides, the organic acid resin will cause a continuous chemical reaction between the metal oxide and the cathode. In the short term, the optoelectronic device shows a "positive aging effect". However, there are a large number of hydroxyl ligands on the surface of the metal oxide, and the hydroxyl ligands will also react continuously with the organic acid to generate water, resulting in a rapid decay of the device efficiency and device life of the optoelectronic device. Therefore, in some embodiments of the present application, a non-acidic organic packaging resin (such as non-acidic epoxy resin) is used for packaging in order to further improve the performance stability of the optoelectronic device.

[0094] Embodiments of the present application also provide an electronic device, which includes any one of the optoelectronic devices described above, or an optoelectronic device prepared by the preparation method of any one of the optoelectronic devices described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to smartphones, tablet personal computers, mobile phones, video telephones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, in-vehicle navigators, electronic billboards, automated teller machines, smart bracelets, smart watches, Virtual Reality (VR) devices or wearable devices.

[0095] The technical solutions and technical effects of the present application will be described in detail below through specific examples, comparative examples and experimental examples. The following examples are only partial examples of the present application and do not specifically limit the present application.

[0096] Example 1

[0097] This example provides an optoelectronic device and a preparation method thereof. The optoelectronic device is a quantum dot light-emitting diode with a normal structure. As Figure 1 shown, in the direction from bottom to top, the optoelectronic device 10 includes an anode 11, a second carrier functional layer 15, an active layer 13, a first carrier functional layer 14, and a cathode 12 that are sequentially stacked. The anode 11 is the anode and the cathode 12 is the cathode. Among them, the second carrier functional layer 15 is a hole functional layer and the first carrier functional layer 14 is an electron functional layer. The second carrier functional layer 15 is composed of a hole injection layer 151 and a hole transport layer 152 that are stacked. The hole injection layer 151 is closer to the anode 11 than the hole transport layer 152. The first carrier functional layer 14 is composed of a first sub-layer 141, a second sub-layer 142, and a third sub-layer 143 that are sequentially stacked. The first sub-layer 141 is closer to the active layer than the third sub-layer 143. The light-emitting area of the optoelectronic device is 0.04 cm 2 .

[0098] The materials and thicknesses of each layer in the optoelectronic device 10 are as follows:

[0099] The material of the anode 11 includes ITO, and the thickness of the anode 11 is 70 nm;

[0100] The material of the cathode 12 includes an Ag-Fe alloy (the molar percentage of Fe is 10%), and the thickness of the cathode 12 is 100 nm;

[0101] The material of the active layer 13 includes Cd 0.09 Zn 0.91 Se (core) / ZnSe (first intermediate shell) / Cd 0.02 Zn 0.98 S (second intermediate shell) / ZnS (outer shell), the emission color is blue, and the thickness of the active layer 13 is 40 nm;

[0102] The material of the hole injection layer 151 includes PEDOT:PSS, and the thickness of the hole injection layer 151 is 15 nm;

[0103] The material of the hole transport layer 152 includes TFB, and the thickness of the hole transport layer 152 is 15 nm;

[0104] The material of the first sub-layer 141 includes nano-Zn 0.9 Mg 0.1 O (average particle size is 5 nm), and the thickness of the first sub-layer 141 is 6 nm;

[0105] The material of the second sub-layer 142 includes graphene (CAS number is 1034343-98-0) and LiOH. Among them, the mass ratio of graphene to LiOH is 1:0.05, and the thickness of the second sub-layer 142 is 20 nm;

[0106] The material of the third sub-layer 143 includes nano-Zn 0.9 Mg 0.1 O (average particle size is 5 nm), and the thickness of the third sub-layer 143 is 30 nm.

[0107] The preparation method of the optoelectronic device in this embodiment includes the following steps:

[0108] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, and then ultrasonically clean the substrate including ITO in acetone for 15 min, in ethanol for 15 min, and in deionized water for 15 min in sequence. After drying, place it on a heating plate at 150 °C for 10 min, and then irradiate it with ultraviolet light for 20 min to obtain a substrate including an anode;

[0109] S1.2. Under the air environment of normal temperature and pressure, inkjet print an aqueous solution of PEDOT:PSS with a mass fraction of 2.8% on the side of the anode far from the substrate, and then place it in a constant temperature heat treatment at 150 °C for 20 min to obtain a hole injection layer;

[0110] S1.3. Under the nitrogen environment of normal temperature and pressure, inkjet print a TFB-chlorobenzene solution with a concentration of 8.5 mg / mL on the side of the hole injection layer far from the bottom electrode, and then place it in a constant temperature heat treatment at 170 °C under a nitrogen atmosphere for 20 min to obtain a hole transport layer;

[0111] S1.4. Under the nitrogen environment of normal temperature and pressure, inkjet print a solution of Cd 0.09 Zn 0.91 Se / ZnSe / Cd 0.02 Zn 0.98 S / ZnS quantum dots - n-octane solution on the side of the hole transport layer far from the hole injection layer, and then place it in a constant temperature heat treatment at 80 °C under a nitrogen atmosphere (nitrogen environment of normal temperature and pressure) for 5 min to obtain an active layer;

[0112] S1.5. Under the nitrogen environment of normal temperature and pressure, inkjet print a 0.5 mg / mL nano-Zn 0.9 Mg 0.1 O-ethanol solution to obtain a liquid film, then let the liquid film stand for 3 min under a nitrogen atmosphere of 1 Pa, and then carry out a constant temperature heat treatment at 100 °C under a nitrogen atmosphere for 2 min to form a cured film, and then let the cured film stand for 1 min in an air atmosphere (relative humidity is 60%) to obtain a first sub-layer;

[0113] S1.6. Provide 4 mL of graphene dispersion (dispersion medium is ethylene glycol) with a concentration of 5 mg / mL, add 10 mmol of LiOH to the graphene dispersion, disperse evenly to obtain a material dispersion, and then under the nitrogen environment of normal temperature and pressure, inkjet print the material dispersion on the side of the first sub-layer far from the active layer to obtain a liquid film, let the liquid film stand for 10 min under a nitrogen atmosphere of 1 Pa, and then carry out a constant temperature heat treatment at 100 °C under a nitrogen atmosphere to obtain a cured film, and then place the prefabricated device including the cured film in the processing chamber of a plasma generating device. The generating gas used by the plasma generating device is oxygen. The distance between the nozzle of the plasma generating device and the side of the cured film close to the nozzle is 5 cm. Turn on the plasma generating device to discharge to generate oxygen plasma. The pressure in the processing chamber is 1 Pa. The output frequency of the plasma generating device is 500 W. The oxygen plasma treatment time is 10 min to obtain a second sub-layer;

[0114] S1.7. Under the nitrogen environment at normal temperature and pressure, inkjet print 0.5 mg / mL of nano-Zn on the side of the second sub-layer far from the first sub-layer. 0.9 Mg 0.1 O-ethanol solution to obtain a liquid film. Place the liquid film in a nitrogen atmosphere at 1 Pa and let it stand for 10 min, then perform isothermal heat treatment at 100 °C in an air atmosphere for 10 min to obtain the third sub-layer.

[0115] S1.8. Place the prefabricated device that has completed step S1.7 in an evaporation chamber with a vacuum degree not higher than 3×10 -4 Pa, and thermally evaporate Ag-Fe alloy on the side of the third sub-layer far from the second sub-layer by using a thermal evaporation process to obtain a cathode. Subsequently, encapsulate it with acid-free epoxy resin LOCTITE 3335 to obtain an optoelectronic device.

[0116] Example 2

[0117] This example provides an optoelectronic device and its preparation method. Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this example is that: the oxygen plasma treatment process in step S1.6 is omitted, that is, step S1.6 is replaced with "Provide 4 mL of graphene dispersion with a concentration of 5 mg / mL, add 10 mmol of LiOH to the graphene dispersion, disperse evenly to obtain a material dispersion, and then under the nitrogen environment at normal temperature and pressure, inkjet print the material dispersion on the side of the first sub-layer far from the active layer to obtain a liquid film. Place the liquid film in a nitrogen atmosphere at 1 Pa and let it stand for 10 min, and then perform isothermal heat treatment at 100 °C in a nitrogen atmosphere to obtain the second sub-layer".

[0118] Example 3

[0119] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this example is that: the material of the second sub-layer does not include LiOH.

[0120] Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this example is that: step S1.6 is replaced with "Under the nitrogen environment at normal temperature and pressure, inkjet print the graphene dispersion with a concentration of 5 mg / mL on the side of the first sub-layer far from the active layer to obtain a liquid film, then place the liquid film in a nitrogen atmosphere at 1 Pa and let it stand for 10 min, and then perform isothermal heat treatment at 100 °C in a nitrogen atmosphere to obtain the second sub-layer".

[0121] Example 4

[0122] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that the material of the second sub-layer does not include LiOH.

[0123] Compared with the method for preparing the optoelectronic device in Embodiment 1, the difference of the method for preparing the optoelectronic device in this embodiment is that step S1.6 is replaced with "Under normal temperature and pressure in a nitrogen environment, inkjet print a graphene dispersion with a concentration of 5 mg / mL on the side of the first sub-layer away from the active layer to obtain a liquid film, then leave the liquid film to stand for 10 min under 1 Pa in a nitrogen atmosphere, and then place it in a constant temperature heat treatment at 100 °C in a nitrogen atmosphere to obtain a cured film. Then place the prefabricated device including the cured film in the processing chamber of a plasma generating device. The generating gas used by the plasma generating device is oxygen. The distance between the nozzle of the plasma generating device and the side of the cured film close to the nozzle is 5 cm. Turn on the plasma generating device to discharge to generate oxygen plasma. The pressure in the processing chamber is 1 Pa. The output frequency of the plasma generating device is 500 W. The oxygen plasma treatment time is 10 min to obtain the second sub-layer".

[0124] Embodiment 5

[0125] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the method for preparing the optoelectronic device in Embodiment 1, the difference of the method for preparing the optoelectronic device in this embodiment is that the process of "then leave the cured film to stand for 1 min in an air atmosphere (relative humidity is 60%)" in step S1.5 is omitted.

[0126] Embodiment 6

[0127] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that in the second sub-layer, the mass ratio of graphene to LiOH is 1:0.005.

[0128] Compared with the method for preparing the optoelectronic device in Embodiment 1, the difference of the method for preparing the optoelectronic device in this embodiment is that "10 mmol of LiOH" in step S1.6 is replaced with "1 mmol of LiOH".

[0129] Embodiment 7

[0130] This embodiment provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Embodiment 1, the difference of the optoelectronic device in this embodiment is that in the second sub-layer, the mass ratio of graphene to LiOH is 1:0.1.

[0131] Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this example is that: "10 mmol of LiOH" in step S1.6 is replaced with "20 mmol of LiOH".

[0132] Example 8

[0133] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this example is that: the material of the second sublayer includes graphene (CAS No. 1034343-98-0) and MgCl2, and the thickness of the second sublayer is 20 nm.

[0134] Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this example is that: "10 mmol of LiOH" in step S1.6 is replaced with "10 mmol of MgCl2".

[0135] Example 9

[0136] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this example is that: the material of the second sublayer includes graphene (CAS No. 1034343-98-0) and zinc acetate, and the thickness of the second sublayer is 20 nm.

[0137] Compared with the preparation method of the optoelectronic device in Example 1, the difference in the preparation method of the optoelectronic device in this example is that: "10 mmol of LiOH" in step S1.6 is replaced with "10 mmol of zinc acetate".

[0138] Example 10

[0139] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this example is that: the thickness of the first sublayer is 30 nm, and the thickness of the second sublayer is 6 nm.

[0140] The preparation method of the optoelectronic device in this example is carried out with reference to the preparation method of the optoelectronic device in Example 1.

[0141] Example 11

[0142] This example provides an optoelectronic device and its preparation method. Compared with the optoelectronic device in Example 1, the difference in the optoelectronic device in this example is that: the thickness of the first sublayer is 18 nm, and the thickness of the second sublayer is 18 nm.

[0143] The preparation method of the optoelectronic device in this example is carried out with reference to the preparation method of the optoelectronic device in Example 1.

[0144] Example 12

[0145] This example provides an optoelectronic device and a preparation method thereof. The optoelectronic device is an inverted-type quantum dot light-emitting diode. As shown in Figure 2 , in the direction from bottom to top, the optoelectronic device 10 includes a cathode 12, a second carrier functional layer 15, an active layer 13, a first carrier functional layer 14, and an anode 11 stacked in sequence. The anode 11 is the anode and the cathode 12 is the cathode. Among them, the second carrier functional layer 15 is an electron functional layer and the first carrier functional layer 14 is a hole functional layer. The electron functional layer is a single-layer structure, and the hole functional layer includes a first sub-layer 141, a second sub-layer 142, and a third sub-layer 143 stacked in sequence. The light-emitting area of the optoelectronic device is 0.04 cm 2 .

[0146] The materials and thicknesses of each layer in the optoelectronic device 10 are as follows:

[0147] The material of the cathode 12 includes ITO, and the thickness of the cathode 12 is 70 nm;

[0148] The material of the anode 11 includes an Ag-Fe alloy (the molar percentage of Fe is 10%), and the thickness of the anode 11 is 100 nm;

[0149] The material of the active layer 13 includes Cd 0.09 Zn 0.91 Se (core) / ZnSe (first intermediate shell) / Cd 0.02 Zn 0.98 S (second intermediate shell) / ZnS (outer shell), the emission color is blue, and the thickness of the active layer 13 is 40 nm;

[0150] The material of the second carrier functional layer 15 includes nano-Zn 0.9 Mg 0.1 O (average particle size is 5 nm), and the thickness of the second carrier functional layer 15 is 40 nm;

[0151] The material of the first sub-layer 141 includes nano-NiO (average particle size is 5 nm), and the thickness of the first sub-layer 141 is 6 nm;

[0152] The material of the second sub-layer 142 includes graphene (CAS number is 1034343-98-0), and the thickness of the second sub-layer 142 is 20 nm;

[0153] The material of the third sub-layer 143 includes NiO (average particle size is 5 nm), and the thickness of the third sub-layer 143 is 30 nm.

[0154] The preparation method of the optoelectronic device in this example includes the following steps:

[0155] S10.1. Refer to step S1.1;

[0156] S10.2. Under a nitrogen environment at normal temperature and pressure, inkjet print a 0.5 mg / mL nano-Zn 0.9 Mg 0.1 O-ethanol solution on one side of the cathode, and then perform isothermal heat treatment at 150 °C under a nitrogen atmosphere to solidify into a film, obtaining a second carrier functional layer;

[0157] S10.3. Under a nitrogen environment at normal temperature and pressure, inkjet print a 30 mg / mL Cd 0.09 Zn 0.91 Se / ZnSe / Cd 0.02 Zn 0.98 S / ZnS quantum dot - n-octane solution on the side of the second carrier functional layer away from the cathode, and then place it at 80 °C under a nitrogen atmosphere for isothermal heat treatment (under a nitrogen environment at normal temperature and pressure) for 5 min to obtain an active layer;

[0158] S10.4. Under a nitrogen environment at normal temperature and pressure, inkjet print an 8.5 mg / mL nano-NiO-chlorobenzene solution on the side of the active layer away from the second carrier functional layer to obtain a liquid film, then let the liquid film stand for 3 min at 1 Pa under a nitrogen atmosphere, and then perform isothermal heat treatment at 100 °C under a nitrogen atmosphere for 2 min to form a solidified film, and then let the solidified film stand for 1 min in an air atmosphere (relative humidity is 60%) to obtain a first sub-layer;

[0159] S10.5. Under a nitrogen environment at normal temperature and pressure, inkjet print a 5 mg / mL graphene dispersion (dispersion medium is ethylene glycol) on the side of the first sub-layer away from the active layer to obtain a liquid film, let the liquid film stand for 10 min at 1 Pa under a nitrogen atmosphere, and then place it at 100 °C under a nitrogen atmosphere for isothermal heat treatment to obtain a second sub-layer;

[0160] S10.6. Under a nitrogen environment at normal temperature and pressure, inkjet print an 8.5 mg / mL nano-NiO-chlorobenzene solution on the side of the second sub-layer away from the first sub-layer to obtain a liquid film, let the liquid film stand for 10 min at 1 Pa under a nitrogen atmosphere, and then perform isothermal heat treatment at 100 °C in an air atmosphere for 10 min to obtain a third sub-layer;

[0161] S10.7. Refer to step S1.8.

[0162] Comparative Example 1

[0163] This comparative example provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Example 1, the main difference of the optoelectronic device in this comparative example lies in that the first carrier functional layer is a single-layer structure, and the material of the first carrier functional layer includes Zn 0.9 Mg 0.1 O (with an average particle size of 5 nm), and the thickness of the first carrier functional layer is 56 nm.

[0164] Compared with the method for preparing the optoelectronic device in Example 1, the difference in the method for preparing the optoelectronic device in this comparative example lies in that step S1.5 is replaced with "under a nitrogen environment at normal temperature and pressure, inkjet print a 0.5 mg / mL nano-Zn 0.9 Mg 0.1 O-ethanol solution on the side of the active layer away from the hole transport layer to obtain a liquid film, and then place the liquid film in a constant temperature heat treatment at 100 °C under a nitrogen atmosphere to solidify into a film to obtain the first carrier functional layer", and steps S1.6 and S1.7 are omitted.

[0165] Comparative Example 2

[0166] This comparative example provides an optoelectronic device and a method for preparing the same. Compared with the optoelectronic device in Example 10, the main difference of the optoelectronic device in this comparative example lies in that the first carrier functional layer is a single-layer structure, and the material of the first carrier functional layer includes nano-NiO (with an average particle size of 5 nm), and the thickness of the first carrier functional layer is 56 nm.

[0167] Compared with the method for preparing the optoelectronic device in Example 10, the difference in the method for preparing the optoelectronic device in this comparative example lies in that step S10.4 is replaced with "under a nitrogen environment at normal temperature and pressure, inkjet print a nano-NiO-chlorobenzene solution with a concentration of 8.5 mg / mL on the side of the active layer away from the second carrier functional layer to obtain a liquid film, and then place the liquid film in a constant temperature heat treatment at 100 °C under a nitrogen atmosphere to solidify into a film to obtain the first carrier functional layer", and steps S10.5 and S10.6 are omitted.

[0168] Experimental Example

[0169] Respectively place the encapsulated optoelectronic devices in Examples 1 to 12, Comparative Example 1 and Comparative Example 2 in an atmospheric environment at 120 °C for heat treatment for 30 min, and then perform performance detection on each heat-treated optoelectronic device. The performance detection includes: electroluminescence morphology, maximum brightness (L max , cd / m 2 ) and device lifetime. The detection ambient temperature is 25 °C and the relative humidity is 40%.

[0170] Among them, an efficiency test system built with an IVL optical property measurement device (including Ocean Optics USB2000, LabView-controlled QE-PRO spectrometer, Keithley 2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50μm, device test probes and fixtures, various related connecting wires and data cards, efficiency test dark box, and data acquisition system, etc.) is used to detect parameters such as voltage, current, brightness, and emission spectrum of each optoelectronic device, and then key parameters such as maximum external quantum efficiency and power efficiency are calculated, and the device lifetime of each optoelectronic device is tested using a lifetime test device.

[0171] The test method for the maximum brightness (L max , cd / m 2 ) is as follows: Drive voltage and current are collected intermittently, the brightness values of the optoelectronic device within the current range of 0.001 mA to 2.4 mA are obtained, the emission area for collection is 0.0314 cm 2 , the current value for the initial collection of brightness is 0.2 A, and it is collected once every 0.2 A to obtain the maximum brightness (L max , cd / m 2 ).

[0172] The test method for the device lifetime includes the steps: Under the drive of a constant current (2 mA), a 128-channel QLED lifetime test system is used to perform electroluminescence lifetime analysis on each optoelectronic device, record the time (T95, h) required for each optoelectronic device to decay from the maximum brightness to 95%, and calculate the time (T95@1000nit, h) required for the brightness of each optoelectronic device to decay from 100% to 95% at a brightness of 1000 nit through the decay fitting formula.

[0173] During the performance detection process, three parallel samples are set for each type of optoelectronic device, and the test average value of three parallel samples is taken for each performance detection parameter. The performance detection results of each optoelectronic device at 25°C are shown in Table 1 below:

[0174] Table 1 List of performance detection results of optoelectronic devices in Examples 1 to 12, Comparative Example 1, and Comparative Example 2

[0175]

[0176] From Table 1 and Figures 4 to 6 it can be seen that for the optoelectronic devices with a top-emitting structure, compared with the optoelectronic devices in Comparative Example 1, the comprehensive performance of the optoelectronic devices in Examples 1 to 11 has significant advantages, specifically manifested as: the L of the optoelectronic devices in Examples 1 to 11 maxis higher, and the device lifetime is better. Taking Example 1 and Comparative Example 1 as examples, the L of the optoelectronic device in Example 1 max is the L of the optoelectronic device in Comparative Example 1 max by 1.9 times. The T95 of the optoelectronic device in Example 1 is 3.63 times that of the optoelectronic device in Comparative Example 1, and the T95@1000nit of the optoelectronic device in Example 1 is 8.6 times that of the optoelectronic device in Comparative Example 1@1000nit. For the inverted-structure optoelectronic device, the comprehensive performance of the optoelectronic device in Example 12 is significantly better than that of the optoelectronic device in Comparative Example 2. Specifically, the L of the optoelectronic device in Example 12 max is the L of the optoelectronic device in Comparative Example 2 max by 1.8 times. The T95 of the optoelectronic device in Example 12 is 3.4 times that of the optoelectronic device in Comparative Example 2, and the T95@1000nit of the optoelectronic device in Example 10 is 9 times that of the optoelectronic device in Comparative Example 2@1000nit.

[0177] This shows that in the optoelectronic device, the first carrier functional layer (hole functional layer or electron functional layer) includes a first sub-layer, a second sub-layer, and a third sub-layer stacked in sequence. The material of the first sub-layer includes first inorganic nanoparticles, the material of the second sub-layer includes a first two-dimensional nanomaterial with conductivity, and the material of the third sub-layer includes second inorganic nanoparticles, which can improve the light emission uniformity of the optoelectronic device, thereby enhancing the optoelectronic performance and device lifetime of the optoelectronic device. The fact that the thickness of the first sub-layer is thinner than that of the third sub-layer can further enhance the optoelectronic performance and device lifetime of the optoelectronic device. The reason may be that: since the thickness of the first sub-layer is thinner than that of the third sub-layer, the influence of the thickness uniformity of the first sub-layer on the performance of the active layer is smaller than that of the thickness uniformity of the third sub-layer on the performance of the active layer. Thus, on the premise of improving the energy level matching degree between the first carrier functional layer and the active layer, it is beneficial to optimize the interface between the first carrier functional layer and the active layer; the material of the second sub-layer is a first two-dimensional nanomaterial with conductivity, which has good thickness uniformity. Carriers are injected from the electrode (anode or cathode) of the optoelectronic device into the active layer through the third sub-layer, the second sub-layer, and the first sub-layer. Among them, after the carriers passing through the third sub-layer enter the second sub-layer, the lateral transport of the carriers is greater than the longitudinal transport, so that the carriers are quickly redistributed in the second sub-layer, improving the distribution uniformity and transport uniformity of the carriers, and can solve the problem of uneven current distribution caused by the uneven thickness of the third sub-layer.

[0178] The above has introduced in detail an optoelectronic device, a preparation method of the optoelectronic device, and an electronic device provided by the embodiments of the present application. Specific examples are used in this article to elaborate on the principle and implementation manner of the present application. The description of the above embodiments is only used to help understand the technical solution and its core idea of the present application; those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing embodiments, or perform equivalent replacements on some of the technical features; and these modifications or replacements do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An optoelectronic device, characterized in that, Comprising: An anode and a cathode which are oppositely arranged; And A first carrier functional layer disposed between the anode and the cathode; Wherein, the first carrier functional layer includes a first sub-layer, a second sub-layer and a third sub-layer which are sequentially stacked, the material of the first sub-layer includes first inorganic nanoparticles, the material of the second sub-layer includes first two-dimensional nanomaterials, and the material of the third sub-layer includes second inorganic nanoparticles.

2. The optoelectronic device according to claim 1, characterized in that, The thickness of the first sub-layer is less than the thickness of the third sub-layer; and / or The thickness of the first sub-layer is 3 nm to 10 nm, and the thickness of the third sub-layer is 20 nm to 100 nm; and / or The thickness of the second sub-layer is 10 nm to 50 nm; and / or The average sheet diameter of the first two-dimensional nanomaterial is 50 nm to 200 nm; and / or The conductivity of the first two-dimensional nanomaterial at 25 °C is not less than 100 S / m; and / or The first two-dimensional nanomaterial is selected from one or more of graphene, reduced graphene oxide, transition metal dichalcogenides, phosphorene and black phosphorus; and / or The average particle size of the first inorganic nanoparticles is 2 nm to 20 nm, and / or the average particle size of the second inorganic nanoparticles is 2 nm to 20 nm; and / or The first inorganic nanoparticles and the second inorganic nanoparticles are the same; and / or The optoelectronic device further includes an active layer, the active layer is disposed between the first carrier functional layer and the anode or between the first carrier functional layer and the cathode, and the first sub-layer is closer to the active layer than the third sub-layer.

3. The optoelectronic device according to claim 1 or 2, characterized in that, The first carrier functional layer is an electron functional layer, the first inorganic nanoparticles and the second inorganic nanoparticles are independently selected from non-doped first metal oxides and / or doped second metal oxides, the non-doped first metal oxides are selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a first host metal oxide doped with a first doping element, the first host metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn.

4. The optoelectronic device according to claim 3, characterized in that, The material of the second sub-layer further includes metal compounds, the metal compounds are selected from one or more of metal hydroxides and metal salts, and the metal elements in the metal hydroxides and the metal elements in the metal salts are independently selected from one or more of Li, Na, K, Mg, Zn, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn.

5. The optoelectronic device according to claim 4, characterized in that, In the second sub-layer, the mass ratio of the first two-dimensional nanomaterial to the metal compound is 1:(0.005 - 0.1); and / or The anion generated by the ionization of the metal salt is selected from one or more of acetate ion, carbonate ion, bicarbonate ion, halogen anion, nitrate ion, sulfate ion, and phosphate ion.

6. The optoelectronic device according to claim 3, characterized in that, The optoelectronic device further includes a second carrier functional layer disposed between the first carrier functional layer and the anode, and the second carrier functional layer is a hole functional layer; the material of the hole functional layer includes an undoped first inorganic compound, a doped second inorganic compound, poly(3,4-ethylenedioxythiophene): poly(styrenesulfonic acid), copper phthalocyanine, titanium oxyphthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyano-p-benzoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazolyl)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorene-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorene-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4''-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene, or one or more of them; Among them, the undoped first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; and / or, the doped second inorganic compound is a host inorganic compound doped with a second doping element, the host inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

7. The optoelectronic device according to claim 6, characterized in that, The second carrier functional layer includes a fourth sub-layer, a fifth sub-layer, and a sixth sub-layer stacked in sequence. The material of the fourth sub-layer includes third inorganic nanoparticles, the material of the fifth sub-layer includes a second two-dimensional nanomaterial, and the material of the sixth sub-layer includes fourth inorganic nanoparticles.

8. The optoelectronic device according to claim 7, characterized in that, The thickness of the fourth sub-layer is less than the thickness of the sixth sub-layer; and / or The fourth sub-layer is closer to the cathode than the sixth sub-layer; and / or The thickness of the fourth sub-layer is 3 nm to 10 nm, and the thickness of the sixth sub-layer is 20 nm to 100 nm; and / or The thickness of the fifth sub-layer is 10 nm to 50 nm; and / or The average sheet diameter of the second two-dimensional nanomaterial is 50 nm to 200 nm; and / or The conductivity of the second two-dimensional nanomaterial at 25 °C is not less than 100 S / m; and / or The second two-dimensional nanomaterial is selected from one or more of graphene, reduced graphene oxide, transition metal disulfides, phosphorene, and black phosphorus; and / or The average particle size of the third inorganic nanoparticles is 2 nm to 20 nm, and / or the average particle size of the fourth inorganic nanoparticles is 2 nm to 20 nm; and / or The third inorganic nanoparticles and the fourth inorganic nanoparticles are the same; and / or The third inorganic nanoparticles and the fourth inorganic nanoparticles are independently selected from undoped third metal oxides and / or doped fourth metal oxides. The undoped third metal oxides are selected from one or more of NiO, MoO3, WO3, V2O5, CrO3, CuO, and Cu2O; and / or, the doped fourth metal oxide is a second host metal oxide doped with a third doping element. The second host metal oxide is selected from NiO, MoO3, WO3, V2O5, CrO3, CuO, or Cu2O, and the third doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

9. The optoelectronic device according to claim 1 or 2, characterized in that,The first carrier functional layer is a hole functional layer. The first inorganic nanoparticles and the second inorganic nanoparticles are independently selected from undoped third metal oxides and / or doped fourth metal oxides. The undoped third metal oxides are selected from one or more of NiO, MoO3, WO3, V2O5, CrO3, CuO, and Cu2O; and / or, the doped fourth metal oxide is a second host metal oxide doped with a third doping element. The second host metal oxide is selected from NiO, MoO3, WO3, V2O5, CrO3, CuO, or Cu2O, and the third doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

10. The optoelectronic device according to claim 9, wherein, The optoelectronic device further includes a second carrier functional layer disposed between the first carrier functional layer and the cathode. The second carrier functional layer is an electron functional layer. The material of the electron functional layer includes undoped first metal oxides and / or doped second metal oxides. The undoped first metal oxides are selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; and / or, the doped second metal oxide is a first host metal oxide doped with a first doping element. The first host metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn.

11. The optoelectronic device according to claim 2, wherein, The active layer is a light-emitting layer, and the materials of the light-emitting layer include one or more of organic light-emitting materials and quantum dots; the organic light-emitting materials are selected from one or more of 4,4'-bis(N-carbazolyl)-1,1'-biphenyl: tris[2-(p-tolyl)pyridineiridium(III)], 4,4',4''-tris(carbazol-9-yl)triphenylamine: tris[2-(p-tolyl)pyridineiridium, diarylanthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescence materials, TTA materials, thermally activated delayed materials, polymers containing B-N covalent bonds, hybrid local charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, poly(phenylene) and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the quantum dots are selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, and the shell layer of the core-shell structure quantum dots includes one or more layers;The material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots, and the material of the shell of the core-shell structure quantum dots are independently selected from at least one of II-VI group compounds, III-V group compounds, III-VI group compounds, IV-VI group compounds, or I-III-VI group compounds, where the II-VI group compounds are selected from one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe; the III-V group compounds are selected from one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb; the III-VI group compounds are selected from one or more of In2S3, In2Se3, InGaS3, and InGaSe3; the IV-VI group compounds are selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe; the I-III-VI group compounds are selected from one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2; and / or, the structural general formula of the inorganic perovskite quantum dots is AMX3, where A is Cs; + , M is a divalent metal cation, and M is selected from Pb 2+ , Sn 2+ , Cu 2+ , Ni 2+ , Cd 2+ , Cr 2+ , Mn 2+ , Co 2+ , Fe 2+ , Ge 2+ , Yb 2+ and Eu 2+ one or more of them, X is a halogen anion; and / or, the structural general formula of the organic perovskite quantum dots is CMX3, where C is formamidinium; and / or, the structural general formula of the organic-inorganic hybrid perovskite quantum dots is BMX3, where B is an organic amine cation; and / or The materials of the anode and the cathode independently include one or more of metals, carbon materials, and fifth metal oxides; wherein, the metals are selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg, and / or the carbon materials are selected from one or more of graphite, carbon nanotubes, graphene, and carbon fibers, and / or the fifth metal oxides are selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO, and In2O3.

12. A method for preparing an optoelectronic device, wherein, Comprising the following steps: Providing a bottom electrode and forming a first carrier functional layer on one side of the bottom electrode; and Forming a top electrode on the side of the first carrier functional layer away from the bottom electrode; Wherein, one of the bottom electrode and the top electrode is an anode and the other is a cathode; the forming method of the first carrier functional layer includes the steps of: sequentially forming a third sub-layer, a second sub-layer, and a first sub-layer on the side of the active layer away from the bottom electrode, or the forming method of the first carrier functional layer includes the steps of: sequentially forming a first sub-layer, a second sub-layer, and a third sub-layer on one side of the bottom electrode; The material of the first sub-layer includes first inorganic nanoparticles, the material of the second sub-layer includes first two-dimensional nanomaterials, and the material of the third sub-layer includes second inorganic nanoparticles.

13. The method for preparing an optoelectronic device according to claim 12, wherein, The thickness of the first sub-layer is less than that of the third sub-layer; and / or The thickness of the first sub-layer is 3 nm to 10 nm, and the thickness of the third sub-layer is 20 nm to 100 nm; and / or The thickness of the second sub-layer is 10 nm to 50 nm; and / or The average sheet diameter of the first two-dimensional nanomaterial is 50 nm to 200 nm; and / or The conductivity of the first two-dimensional nanomaterial at 25 °C is not less than 100 S / m; and / or The first two-dimensional nanomaterial is selected from one or more of graphene, reduced graphene oxide, transition metal dichalcogenides, phosphorene, and black phosphorus; and / or The average particle size of the first inorganic nanoparticles is 2 nm to 20 nm, and / or the average particle size of the second inorganic nanoparticles is 2 nm to 20 nm; and / or The first inorganic nanoparticles are the same as the second inorganic nanoparticles; and / or The method for preparing the optoelectronic device further includes the step of forming an active layer between the first carrier functional layer and the anode, or forming an active layer between the first carrier functional layer and the cathode; optionally, the active layer is a light-emitting layer, and the material of the light-emitting layer includes an organic light-emitting material and / or quantum dots; and / or The first carrier functional layer is an electron functional layer, and the first inorganic nanoparticles and the second inorganic nanoparticles are independently selected from an undoped first metal oxide and / or a doped second metal oxide. The undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; and / or, the doped second metal oxide is a first host metal oxide doped with a first doping element. The first host metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn; and / or The first carrier functional layer is a hole functional layer, and the first inorganic nanoparticles and the second inorganic nanoparticles are independently selected from an undoped third metal oxide and / or a doped fourth metal oxide. The undoped third metal oxide is selected from one or more of NiO, MoO3, WO3, V2O5, CrO3, CuO, and Cu2O; and / or, the doped fourth metal oxide is a second host metal oxide doped with a third doping element. The second host metal oxide is selected from NiO, MoO3, WO3, V2O5, CrO3, CuO, or Cu2O, and the third doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements; and / or The method for forming the third sub-layer includes the steps of depositing a first dispersion liquid including second inorganic nanoparticles, and then performing a first drying treatment on the deposited first dispersion liquid to obtain the third sub-layer; and / or The method for forming the first sub-layer includes the steps of: depositing a second dispersion liquid including first inorganic nanoparticles, and then performing a second drying treatment on the deposited second dispersion liquid to obtain the first sub-layer; and / or The method for forming the second sub-layer includes the steps of: depositing a third dispersion liquid including first two-dimensional nanomaterials, and then performing a third drying treatment on the deposited third dispersion liquid to obtain the second sub-layer.

14. The method for preparing an optoelectronic device according to claim 13, wherein, After the step of the first drying treatment and before the step of obtaining the third sub-layer, the method for forming the third sub-layer further includes the steps of: placing the first cured film obtained by the first drying treatment in an air atmosphere for a first atmosphere treatment, wherein the relative humidity of the air atmosphere is 30% to 90%; and / or After the step of the second drying treatment and before the step of obtaining the first sub-layer, the method for forming the first sub-layer includes the steps of: performing a second atmosphere treatment on the second cured film obtained by the second drying treatment in an air atmosphere, wherein the relative humidity of the air atmosphere is 30% to 90%; and / or The first charge carrier functional layer is an electron functional layer, and the method for forming the second sub-layer further includes the steps of: performing an oxygen plasma treatment on the third cured film obtained by the third drying treatment; and / or The third dispersion liquid further includes metal compounds, and the metal compounds are selected from one or more of metal hydroxides and metal salts. The metal elements in the metal hydroxides and the metal elements in the metal salts are independently selected from one or more of Li, Na, K, Mg, Zn, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn.

15. The method for preparing an optoelectronic device according to claim 14, wherein, The time of the first atmosphere treatment is 1 min to 5 min; and / or The time of the second atmosphere treatment is 1 min to 5 min; and / or The step of performing an oxygen plasma treatment on the third cured film obtained by the third drying treatment includes: placing the third cured film obtained by the third drying treatment in a processing chamber of a plasma generating device, and using oxygen plasma generated by discharging a generating gas including oxygen to treat the third cured film. Wherein, the pressure in the processing chamber is 0.1 Pa to 100 Pa, the output frequency of the plasma generating device is 100 W to 2000 W, and the time of the oxygen plasma treatment is 0.5 min to 10 min; and / or In the third dispersion liquid, the concentration of metal cations ionized by the metal compounds is 0.25 mmol / mL to 40 mmol / mL, and / or the anions ionized by the metal salts are selected from one or more of acetate ions, carbonate ions, bicarbonate ions, halogen anions, nitrate ions, sulfate ions, and phosphate ions; and / or In the second sub-layer, the mass ratio of the first two-dimensional nanomaterials to the metal compounds is 1:(0.005 to 0.1).

16. The manufacturing method of the optoelectronic device according to any one of claims 12 to 15, characterized in that, The first charge carrier functional layer is an electron functional layer, and the method for manufacturing the optoelectronic device further includes the step of forming a second charge carrier functional layer between the anode and the electron functional layer, where the second charge carrier functional layer is a hole functional layer; the material of the hole functional layer includes one or more of an organic compound, an undoped first inorganic compound, and a doped second inorganic compound; wherein, the organic compound is selected from one or more of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium oxyphthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoquinodimethane, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazolyl)biphenyl, poly[bis(4-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-din-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4''-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene; and / or, the undoped first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide; and / or, the doped second inorganic compound is a host inorganic compound doped with a second doping element, the host inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, p-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide, and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements; and / or The first carrier functional layer is a hole functional layer, and the method for manufacturing the optoelectronic device further includes the step of forming a second carrier functional layer between the cathode and the first carrier functional layer, where the second carrier functional layer is an electron functional layer; the material of the electron functional layer includes an undoped first metal oxide and / or a doped second metal oxide, the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, and ZrO2; and / or, the doped second metal oxide is a first host metal oxide doped with a first doping element, the first host metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In, and Sn.

17. The manufacturing method of the optoelectronic device according to claim 16, characterized in that, The first carrier functional layer is an electron functional layer; the bottom electrode is an anode and the top electrode is a cathode, and the method for forming the second carrier functional layer includes the steps of sequentially forming a sixth sub-layer, a fifth sub-layer, and a fourth sub-layer on one side of the bottom electrode; or, the bottom electrode is a cathode and the top electrode is an anode, and the method for forming the second carrier functional layer includes the steps of sequentially forming a fourth sub-layer, a fifth sub-layer, and a sixth sub-layer on the side of the active layer away from the bottom electrode; Wherein, the material of the fourth sub-layer includes third inorganic nanoparticles, the material of the fifth sub-layer includes second two-dimensional nanomaterials, and the material of the sixth sub-layer includes fourth inorganic nanoparticles.

18. The manufacturing method of the optoelectronic device according to claim 17, characterized in that, The thickness of the fourth sub-layer is less than the thickness of the sixth sub-layer; and / or The fourth sub-layer is closer to the cathode than the sixth sub-layer; and / or The thickness of the fourth sub-layer is 3 nm to 10 nm, and the thickness of the sixth sub-layer is 20 nm to 100 nm; and / or The thickness of the fifth sub-layer is 10 nm to 50 nm; and / or The average sheet diameter of the second two-dimensional nanomaterials is 50 nm to 200 nm; and / or The conductivity of the second two-dimensional nanomaterials at 25 °C is not less than 100 S / m; and / or The second two-dimensional nanomaterials are selected from one or more of graphene, reduced graphene oxide, transition metal dichalcogenides, phosphorene, and black phosphorus; and / or The average particle size of the third inorganic nanoparticles is 2 nm to 20 nm, and / or the average particle size of the fourth inorganic nanoparticles is 2 nm to 20 nm; and / or The third inorganic nanoparticles and the fourth inorganic nanoparticles are the same; and / or The third inorganic nanoparticles and the fourth inorganic nanoparticles are each independently selected from undoped third metal oxides and / or doped fourth metal oxides. The undoped third metal oxides are selected from one or more of NiO, MoO3, WO3, V2O5, CrO3, CuO, and Cu2O; and / or, the doped fourth metal oxides are second host metal oxides doped with a third doping element. The second host metal oxides are selected from NiO, MoO3, WO3, V2O5, CrO3, CuO, or Cu2O, and the third doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper, and platinum group metal elements.

19. An electronic device, characterized in that, Comprising the optoelectronic device according to any one of claims 1 to 11, or the optoelectronic device prepared by the preparation method according to any one of claims 12 to 18.

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