Perovskite-based area array detector and inverted preparation method and application thereof

Abstract

The invention provides a perovskite-based area array detector and an inverted preparation method and application thereof. The perovskite-based area array detector comprises a substrate, a pixel point array, a metal-based solder ball array, a metal-based bonding pad array, a perovskite layer and an electrode which are arranged in a stacked mode. Wherein pixel units in the pixel array are connected with solder ball units in the metal-based solder ball array in a one-to-one correspondence manner, and the solder ball units in the metal-based solder ball array are connected with bonding pad units in the metal-based bonding pad array in a one-to-one correspondence manner. According to the invention, the metal-based solder ball array is used for positioning and connecting the perovskite layer and the pixel point array, so that the electrical performance communication between the perovskite layer and the pixel point array can be realized, and meanwhile, the transverse bonding between the electrodes of the metal-based solder ball array can be effectively avoided. In addition, the metal-based bonding pad array is beneficial to improving the contact performance between the metal-based solder ball array and the perovskite layer, and the electrical connection performance between the perovskite layer and the pixel point array is improved. In conclusion, the perovskite-based area array detector can realize low-dose high-speed detection imaging.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor devices, and particularly relates to a perovskite-based area array detector, a flip-chip preparation method thereof, and an application thereof. Background Art

[0002] Perovskite materials contain high atomic number elements such as lead (Pb), bromine (Br), iodine (I), cesium (Se), etc. In addition, they also have the advantages of low cost, easy preparation, excellent optoelectronic properties, etc. Therefore, they have received extensive attention in the fields of solar cells, light-emitting diodes, detectors, memristors, etc. Among them, high-energy ray and particle detectors (radiation detectors) are the core devices for radiation detection and imaging. So far, a large number of X-ray detectors with excellent performance using perovskite thin films / thick films, single crystals, wafers, etc. as the photoactive layer have been reported. Although the X-ray detector using perovskite polycrystals as the photoactive layer has good X-ray response and detection performance, the deficiencies such as a large number of grain boundaries, trap / defect states formed during the preparation process of perovskite polycrystalline materials seriously hinder the further improvement of the imaging performance of perovskite polycrystalline X-ray detectors. In contrast, perovskite single crystals do not have the problem of grain boundaries, and the trap / defect state density is also significantly reduced, which is an ideal choice for X-ray detectors.

[0003] The existing research work on perovskite single crystal X-ray detection imaging mostly adopts two methods: single-pixel detector scanning imaging and linear array detector scanning imaging. However, the imaging time required by the above methods is relatively long, which will further prolong the radiation time of the object to be measured, significantly increase the radiation dose absorbed by the object to be measured, and ultimately cause the object to be measured to be damaged by unwanted secondary radiation. Therefore, single-pixel scanning imaging, linear array scanning imaging, and array detectors with low-density pixel point integration do not meet the requirements of commercial applications. From the existing research work, it can be seen that the X-ray imaging quality highly depends on the crystallization quality of the perovskite photoactive layer and the integration density of pixel points. TFT (thin film transistor), CMOS (complementary metal oxide semiconductor) pixel chips, and PCB boards (printed circuit boards) integrated with high-density pixel arrays can achieve fast X-ray detection scanning imaging and are the best candidate substrates for X-ray detection imaging. However, it is difficult to combine the perovskite layer with the high-density integrated pixel point array.

[0004] Therefore, how to effectively achieve a good combination between the perovskite layer and the high-density integrated pixel point array to obtain an area array detector with low-dose and fast imaging is a technical problem to be solved urgently. Summary of the Invention

[0005] In view of the deficiencies in the prior art, the object of the present invention is to provide a perovskite-based surface array detector and a flip-chip preparation method and application thereof. The present invention utilizes a metal-based solder ball array to accurately position and connect the perovskite layer and the high-density integrated pixel array, which helps to achieve good electrical performance connectivity between the perovskite layer and the pixel array, and can effectively avoid lateral bonding between the electrodes of the metal-based solder ball array. In addition, the metal-based pad array can be used as an anchor point for the metal-based solder ball array to connect with the perovskite layer, which can enhance the contact performance between the metal-based solder ball array and the perovskite layer, and further improve the electrical connection performance between the perovskite layer and the pixel array. In summary, the perovskite-based surface array detector can achieve low-dose and high-speed detection imaging.

[0006] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a perovskite-based surface array detector, which includes a stacked substrate, a pixel array, a metal-based solder ball array, a metal-based pad array, a perovskite layer and an electrode; wherein the pixel units in the pixel array and the solder ball units in the metal-based solder ball array are connected one-to-one, and the solder ball units in the metal-based solder ball array and the pad units in the metal-based pad array are connected one-to-one.

[0008] The present invention uses a metal-based solder ball array to accurately locate and connect the perovskite layer and the high-density integrated pixel array, which helps to achieve good electrical performance connectivity between the perovskite layer and the pixel array, and can effectively avoid lateral bonding between the electrodes of the metal-based solder ball array. In addition, the metal-based pad array can be used as an anchor point for the metal-based solder ball array to connect with the perovskite layer, which can enhance the contact performance between the metal-based solder ball array and the perovskite layer, and further improve the electrical connection performance between the perovskite layer and the pixel array. In summary, the perovskite-based surface array detector can achieve low-dose and high-speed detection imaging.

[0009] Preferably, the pixel units in the pixel array include TFT (Thin Film Transistor) and / or CMOS (Complementary Metal Oxide Semiconductor).

[0010] Preferably, the substrate is a printed circuit board (PCB board).

[0011] Preferably, the substrate is electrically connected to the pixel array.

[0012] Preferably, the metal-based solder ball array and the metal-based solder pad array are both made of a single metal or a metal alloy.

[0013] Preferably, the metal element comprises tin, gold, lead, antimony, silver, copper or Any one of .

[0014] Preferably, the metal alloy includes a tin alloy.

[0015] Exemplarily, the material of the metal-based pad array may be, for example, at least one of Sn20Au80, Sn10Pb90, Sn90Sb10, Sn95Sb5, Sn96.5Ag3.0Cu0.5, Sn95.5Sg3.8Cu0.7, Sn95.5Ag4.0Cu0.5, Sn96.5Ag3.5, and Sn100. It should be noted that 20 and 80 in "Sn20Au80" respectively represent that the mass content of Sn in the alloy material is 20%, and the mass content of Au is 80%, and the same applies to others.

[0016] Exemplarily, the material of the metal-based solder ball array may be, for example, Sn63Pb37, Sn62Pb36Ag2, Sn42Bi58, Sn48In52, or Sn42Bi57.6Ag0.4, etc.

[0017] Preferably, the diameter of the solder ball unit in the metal-based solder ball array is 150 - 200 μm, and may be, for example, 150 μm, 160 μm, 170 μm, 180 μm, 190 μm, or 200 μm, etc.

[0018] In the present invention, the metal-based solder ball array composed of solder ball units with appropriate diameters helps to achieve good electrical performance connection between the perovskite layer and the pixel point array, and can effectively avoid the adhesion of array electrodes.

[0019] Preferably, the thickness of the metal-based pad array is 60 - 200 nm, and may be, for example, 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm, or 200 nm, etc.

[0020] In the present invention, the appropriate thickness of the metal-based pad array is beneficial to improving the mechanical bonding strength and electrical connection performance between the perovskite single crystal and the pixel point array, and effectively avoiding the lateral adhesion between the metal-based pads.

[0021] Preferably, the diameter size of the pad unit in the metal-based pad array is 100 - 200 μm, and may be, for example, 100 μm, 120 μm, 140 μm, 160 μm, 180 μm, or 200 μm, etc., and the distance between the pad units is 50 - 100 μm, and may be, for example, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, or 100 μm, etc.

[0022] Preferably, the perovskite layer is a perovskite single crystal.

[0023] Preferably, the size of the perovskite single crystal satisfies the following conditions: the length is 12 - 32 mm, for example, it can be 12 mm, 15 mm, 20 mm, 25 mm, 30 mm or 32 mm, etc., and the height is 1 - 3 mm, for example, it can be 1 mm, 2 mm or 3 mm, etc.

[0024] Preferably, the crystal structure of the perovskite single crystal is any one of zero - dimensional, one - dimensional, two - dimensional or three - dimensional.

[0025] Preferably, the electrode includes any one of a metal electrode, a carbon electrode or a transparent electrode. Exemplarily, the metal electrode can be, for example, a gold electrode, a silver electrode, a copper electrode or a bismuth electrode, etc., and the transparent electrode can be, for example, fluorine - doped tin oxide (FTO) or indium tin oxide (ITO), etc.

[0026] Preferably, the layer thickness of the electrode is 80 - 120 nm, for example, it can be 80 nm, 90 nm, 100 nm, 110 nm or 120 nm, etc.

[0027] Preferably, a first charge - transport layer is provided between the metal - based pad array and the perovskite layer. In the present invention, by providing a first charge - transport layer between the metal - based pad array and the perovskite layer, direct contact between the perovskite layer and the metal - based pad array can be directly avoided. At the same time, the surface of the perovskite layer can be passivated, the surface trap / defect density can be reduced, and the detection performance and long - term working stability of the area array detector can be improved.

[0028] Preferably, the first charge - transport layer is an electron - transport layer, and the electron - transport layer is a metal - oxide transport layer or an organic transport layer.

[0029] Preferably, the metal - oxide transport layer includes a titanium dioxide transport layer and / or a tin dioxide transport layer.

[0030] Preferably, the organic transport layer includes a carbon black transport layer and / or a C 60 transport layer.

[0031] Preferably, the thickness of the metal - oxide transport layer is 40 - 80 nm, for example, it can be 40 nm, 50 nm, 60 nm, 70 nm or 80 nm, etc.

[0032] Preferably, the thickness of the organic transport layer is 10 - 40 nm, for example, it can be 10 nm, 20 nm, 30 nm or 40 nm, etc.

[0033] Preferably, a second charge - transport layer is provided between the perovskite layer and the electrode, and the charges transported by the second charge - transport layer and the first charge - transport layer have opposite electrical polarities.

[0034] Preferably, the second charge transport layer is an electron transport layer or a hole transport layer. Exemplarily, the hole transport layer can be, for example, a nickel oxide transport layer or a Spiro-OMeTAD (2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene) transport layer, etc.

[0035] It should be noted that whether the second charge transport layer is an electron transport layer or a hole transport layer depends on whether the external voltage is a forward bias or a reverse bias.

[0036] Exemplarily, if a hole transport layer is provided between the perovskite layer and the electrode in the present invention, its purpose is to accelerate hole transport, so as to form an effective current signal more quickly for subsequent detection and processing.

[0037] Preferably, the thickness of the hole transport layer is 10 - 200 nm, and can be, for example, 10 nm, 50 nm, 100 nm, 150 nm or 200 nm, etc.

[0038] In a second aspect, the present invention provides a flip-chip preparation method for a perovskite-based array detector as described in the first aspect. The flip-chip preparation method includes the following steps:

[0039] Prepare a perovskite layer, and deposit a metal-based pad array on the A side of the perovskite layer.

[0040] Provide a substrate integrated with a pixel point array, such that the metal-based solder ball array is connected to the pixel point array, and the pixel point units in the pixel point array and the solder ball units in the metal-based solder ball array are connected in one-to-one correspondence.

[0041] Heat-treat the metal-based pad array and the metal-based solder ball array, such that the solder ball units in the metal-based solder ball array and the pad units in the metal-based pad array are connected in one-to-one correspondence, and then deposit an electrode on the B side of the perovskite layer to obtain the perovskite-based array detector.

[0042] It should be noted that the "A side" refers to any surface of the perovskite layer, and the "B side" refers to the other surface corresponding to the A side.

[0043] Preferably, the preparation method of the perovskite layer includes an inverse temperature crystallization growth method.

[0044] Preferably, the specific steps of the inverse temperature crystallization growth method include:

[0045] Dissolve AX and BX2 in an organic solvent to obtain a perovskite precursor solution. Wherein A is a monovalent metal cation or a monovalent organic cation, B is a metal cation, and X is a halogen anion.

[0046] Perform a first heat treatment on the perovskite precursor solution to precipitate seeds, then cool down for a second heat treatment, and then heat up for a third heat treatment to obtain perovskite single crystals.

[0047] Exemplarily, the A-site cation can be, for example, Li + (lithium), Na +( (sodium), Cs + (cesium), Rb + (rubidium), Ag + (silver), CH3NH3 + (methylamine), CH(NH2)2 + (formamidine), C6H5CH2NH3 + (phenethylamine), CH3CH2NH3 + (ethylamine), CH3(CH2)2NH3 + (propylamine), CH3(CH2)3NH3 + (butylamine) or C 10 H 18 N + (adamantylamine), etc., any one or a combination of at least two. The B-site cation can be, for example, Pb 2+ (lead), Ge 2+ (germanium), Sn 2+ (tin), Al 3+ (aluminum), Bi 3+ (bismuth), Sb 3+ (antimony), Ga 3+ (gallium) or In 3+ (indium), etc., any one or a combination of at least two. The halogen anion can be, for example, Cl - (chlorine), Br - (bromine) or I - (iodine), etc., any one or a combination of at least two.

[0048] Preferably, the molar ratio of AX to BX2 is 1:(1 - 2), for example, it can be 1:1, 1:1.5 or 1:2, etc. Exemplarily, taking CsPbBr3 single crystals as an example, the molar ratio of cesium bromide (CsBr) to lead bromide (PbBr2) is 1:2.

[0049] Preferably, the organic solvent includes N,N-dimethylformamide (DMF) and / or dimethyl sulfoxide (DMSO).

[0050] Preferably, the perovskite precursor solution further contains an additive, and the additive includes alkyltrimethylammonium bromide.

[0051] In the present invention, the addition of the additive helps to obtain large-sized and high-quality perovskite single crystals.

[0052] Preferably, the number of alkyl groups in the alkyltrimethylammonium bromide is 4 - 18, for example, it can be 4, 12, 14, 16, 18, etc.

[0053] Preferably, the alkyltrimethylammonium bromide includes any one or a combination of at least two of dodecyltrimethylammonium bromide, tetradecyltrimethylammonium bromide, hexadecyltrimethylammonium bromide, or octadecyltrimethylammonium bromide.

[0054] Preferably, in the perovskite precursor solution, the concentration of the additive is 0.25 - 1.5 mmol / mL, for example, it can be 0.25 mmol / mL, 0.5 mmol / mL, 0.75 mmol / mL, 1 mmol / mL, 1.25 mmol / mL, or 1.5 mmol / mL, etc.

[0055] Preferably, the process of the first heat treatment includes a first heating process and a first constant temperature process. The initial temperature of the first heating process is 50 - 70 °C, for example, it can be 50 °C, 60 °C, or 70 °C, etc., and the temperature of the first constant temperature process is 85 - 100 °C, for example, it can be 85 °C, 90 °C, 95 °C, or 100 °C, etc.

[0056] In the present invention, using the above process for the precipitation of the seed crystal is beneficial to the growth of high-quality large-sized perovskite single crystals.

[0057] Preferably, the second heat treatment includes a second constant temperature process, and the temperature of the second constant temperature process is 80 - 90 °C, for example, it can be 80 °C, 85 °C, or 90 °C, etc.

[0058] In the present invention, performing the second heat treatment at the above temperature is beneficial to the growth of single crystals.

[0059] It should be noted that the present invention does not limit the time of the second heat treatment, and it is sufficient that the length of the single crystal reaches 4 mm.

[0060] Preferably, the third heat treatment is a second heating process, and the heating rate of the second heating process is 3 - 7 °C / day, for example, it can be 3 °C / day, 4 °C / day, 5 °C / day, 6 °C / day, or 7 °C / day, etc.

[0061] The present invention uses the above heating rate for the heating process, which helps to precisely control the growth rate, crystallization quality, and size of the perovskite single crystal, thereby obtaining perovskite single crystals with higher crystallization quality and larger size.

[0062] It should be noted that the present invention does not limit the time of the third heat treatment, and it is sufficient that the length of the single crystal reaches 8 mm.

[0063] Preferably, before depositing the metal-based pad array on the A side of the perovskite layer, an electron transport layer is first formed. The forming method of the electron transport layer includes any one or a combination of at least two of spin coating, blade coating, spraying, thermal evaporation, magnetron sputtering, or chemical vapor deposition.

[0064] Preferably, the deposition method of the metal-based pad array includes thermal evaporation or magnetron sputtering.

[0065] Preferably, the method for connecting the metal-based solder ball array to the pixel point array includes ball mounting.

[0066] Exemplarily, the ball mounting method can be machine ball mounting or BGA ball mounting (ball grid array package ball mounting). The specific steps of the BGA ball mounting method are exemplified as follows:

[0067] First, clean the surface of the substrate with screen washing water to improve the uniformity of ball mounting; prepare a ball mounting table, apply a soldering flux on the surface of the substrate, and then fix the substrate with the ball mounting table; place a stencil on the top of the substrate, adjust the ball mounting table to adjust the distance between the stencil and the substrate, and after fixing the distance between the two, adjust the stencil so that the holes of the stencil correspond to the pixel points one by one; place a sufficient number of metal-based solder balls into the stencil, and evenly vibrate the ball mounting table to evenly vibrate the metal-based solder balls into the holes of the stencil; recover the excess metal-based solder balls, and then remove the stencil; remove the substrate with the metal-based solder balls placed from the ball mounting table and place it in an infrared reflow soldering machine for thermal soldering treatment; after the thermal soldering treatment is completed, cool the infrared reflow soldering machine to room temperature and take out the substrate with the metal-based solder balls preliminarily soldered; then place it on a heat insulation board, apply soldering flux again, use a hot air gun with a temperature of 350 °C (the air volume is adjusted to the minimum and the nozzle is removed), start heating the substrate from a distance far from the substrate, slowly move from far to near, and at the same time observe carefully and adjust the positions of the metal-based solder balls that have been connected to the pixel points to ensure that all the metal-based solder balls are in place.

[0068] It should be noted that metal-based solder balls, such as tin alloy solder balls, can be prepared using alloy solder paste.

[0069] Preferably, the melting temperature of the raw material for preparing the metal-based pad array is greater than 200 °C, such as 250 °C, 260 °C, 280 °C, or 300 °C, etc. The melting temperature of the raw material for preparing the metal-based solder ball array is less than 200 °C, such as 180 °C, 150 °C, 120 °C, or 100 °C, etc.

[0070] Preferably, the temperature of the heat treatment is less than or equal to 220 °C, such as 150 °C, 180 °C, 190 °C, 200 °C, 210 °C, or 220 °C, etc., and preferably 180 - 220 °C.

[0071] In the present invention, an appropriate heat treatment temperature helps to firmly bond the metal-based solder ball array to the perovskite layer, thereby achieving good electrical connection between the perovskite layer and the pixel array.

[0072] Preferably, the deposition method of the electrode includes thermal evaporation or magnetron sputtering.

[0073] Preferably, the flip-chip preparation method includes the following steps:

[0074] (1) Dissolve AX and BX2 with a molar ratio of 1:(1 - 2) in an organic solvent, and then add an additive to obtain a perovskite precursor solution; wherein, the concentration of the B-site metal cation in the perovskite precursor solution is 1 - 1.5 mol / L (for example, it can be 1 mol / L, 1.1 mol / L, 1.2 mol / L, 1.3 mol / L, 1.4 mol / L or 1.5 mol / L, etc.), the additive includes alkyltrimethylammonium bromide, and the concentration of the additive is 0.25 - 1.5 mmol / mL.

[0075] Perform a first heat treatment on the perovskite precursor solution to precipitate seeds, then cool down to 80 - 90 °C for a second heat treatment until the length of the perovskite single crystal grows to 4 mm, and then increase the temperature at a rate of 3 - 7 °C per day for a third heat treatment until the length of the perovskite single crystal grows to 8 mm to obtain a perovskite single crystal; wherein, the process of the first heat treatment includes a first heating process and a first constant temperature process, the initial temperature of the first heating process is 50 - 70 °C, and the heating rate is 5 - 7 °C / h (for example, it can be 5 °C / h, 6 °C / h or 7 °C / h, etc.), and the temperature of the first constant temperature process is 85 - 100 °C.

[0076] Deposit an electron transport layer on the A surface of the perovskite single crystal, and then use a mask for positioning to deposit a metal-based pad array with a thickness of 60 - 200 nm on the electron transport layer.

[0077] (2) Provide a printed circuit board integrated with a pixel array, and use the ball mounting method to connect the metal-based solder ball array to the pixel array, and the pixel units in the pixel array and the solder ball units in the metal-based solder ball array are connected in one-to-one correspondence.

[0078] (3) Under the condition that the temperature is less than or equal to 220 °C, perform heat treatment on the metal-based pad array and the metal-based solder ball array so that the solder ball units in the metal-based solder ball array and the pad units in the metal-based pad array are connected in one-to-one correspondence.

[0079] (4) Deposit a metal layer with a thickness of 80 - 120 nm on the B surface of the perovskite single crystal as an electrode to complete the preparation of the perovskite surface array detector.

[0080] In a third aspect, the present invention provides an application of the perovskite-based planar array detector as described in the first aspect, and the perovskite-based planar array detector is applied to the fields of X-ray detection imaging and γ-ray detection imaging.

[0081] The numerical ranges described in the present invention not only include the above-listed point values, but also include any point values between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention does not exhaustively list the specific point values included in the described ranges.

[0082] Compared with the prior art, the present invention has the following beneficial effects:

[0083] The present invention uses a metal-based solder ball array to accurately position and connect the perovskite layer and the high-density integrated pixel point array, which helps to achieve good electrical performance connectivity between the perovskite layer and the pixel point array, and at the same time can effectively avoid array electrode bonding. Moreover, the metal-based pad array can serve as an anchor point for the connection between the metal-based solder ball array and the perovskite layer, which can enhance the contact performance between the metal-based solder ball array and the perovskite layer, and further improve the electrical connection performance between the perovskite layer and the pixel point array. In summary, the perovskite-based planar array detector can achieve low-dose high-speed detection imaging. BRIEF DESCRIPTION OF THE DRAWINGS

[0084] Figure 1 It is an optical schematic diagram of the perovskite single crystal provided by the present invention.

[0085] Figure 2 It is the current density - electric field curve of any four pixel points of the perovskite-based planar array detector provided by the present invention. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0086] The technical solutions of the present invention will be further described below through specific embodiments. Those skilled in the art should understand that the described embodiments are only for helping to understand the present invention and should not be regarded as specific limitations on the present invention.

[0087] It should be noted that the following room temperature refers to 25 °C.

[0088] Example 1

[0089] This embodiment provides a perovskite single crystal X-ray planar array detector, which includes a PCB board, a pixel point array, a metal-based solder ball array, a metal-based pad array, a perovskite single crystal, and a metal electrode that are stacked; wherein, the pixel point units in the pixel point array are connected to the solder ball units in the metal-based solder ball array in a one-to-one correspondence, and the solder ball units in the metal-based solder ball array are connected to the pad units in the metal-based pad array in a one-to-one correspondence.

[0090] Among them, the pixel units in the pixel array include TFT and CMOS, and the PCB board is electrically connected to the pixel array; the material of the metal-based solder ball array is Sn63Pb37, and the diameter of the solder ball units in the metal-based solder ball array is 175 μm; the material of the metal-based pad array is Sn20Au80, the thickness of the metal-based pad array is 130 nm, the size of the pad units in the metal-based pad array is 175 μm, and the pitch between the pad units is 75 μm; the crystal structure of the perovskite single crystal is three-dimensional; the metal electrode is a gold electrode with a thickness of 100 nm.

[0091] This embodiment also provides a flip-chip preparation method for the above perovskite single crystal X-ray area array detector, and the flip-chip preparation method includes the following steps:

[0092] (1) Dissolve CsBr and PbBr2 with a molar ratio of 1:2 in an organic solvent (composed of DMF and DMSO with a volume ratio of 1:9), stir at room temperature until the solution is transparent, then take 20 mL of the above solution and add dodecyltrimethylammonium bromide to obtain a perovskite precursor solution, then stir at 60 °C for 12 h, let it stand to room temperature, filter, take 10 mL of the filtered perovskite precursor solution and place it in a 20 mL wide-mouth reagent bottle, and seal the bottle mouth; among them, the concentration of Pb ions in the perovskite precursor solution is 1.2 mol / L, and the concentration of dodecyltrimethylammonium bromide is 0.75 mmol / mL.

[0093] Turn on the heating stage, heat the bath oil temperature to 60 °C, then place the reagent bottle containing the perovskite precursor solution in the bath oil, and then perform the first heat treatment to precipitate the seed crystal, then cool down to 85 °C for the second heat treatment until the length of the perovskite single crystal grows to 4 mm, and then increase the temperature at a heating rate of 5 °C per day for the third heat treatment until the length of the perovskite single crystal grows to 8 mm, stop heating the heating stage, take out the perovskite single crystal, wash it with isopropyl alcohol, and then dry it in a blast drying oven at 80 °C for 1 h, take it out and store it in a glove box; among them, the process of the first heat treatment includes a first heating process and a first constant temperature process, the initial temperature of the first heating process is 60 °C, and the heating rate is 6 °C / h, and the temperature of the first constant temperature process is 90 °C.

[0094] Adopt the thermal evaporation method and use the mask plate for positioning to deposit a metal-based pad array with a thickness of 130 nm on the A surface of the perovskite single crystal.

[0095] (2) Provide a PCB board integrated with a pixel array, and use the BGA ball mounting method to connect the metal-based solder ball array to the pixel array, and the pixel units in the pixel array and the solder ball units in the metal-based solder ball array are connected in one-to-one correspondence.

[0096] (3) Align the metal-based pad array and the metal-based solder ball array through a ball placement table, and then place them together in an infrared reflow soldering machine. Set the peak temperature to 200 °C and perform thermal welding on the metal-based pad array and the metal-based solder ball array, so that the solder ball units in the metal-based solder ball array and the pad units in the metal-based pad array are connected in a one-to-one correspondence. After welding, the infrared reflow soldering machine is cooled to room temperature, and the bonded body prepared by flip-chip integration is taken out.

[0097] (4) Adopt the thermal evaporation method to deposit a metal layer with a thickness of 100 nm on the B surface of the perovskite single crystal as an electrode, and complete the preparation of the perovskite single crystal X-ray area array detector.

[0098] Figure 1 The optical schematic diagram of the perovskite single crystal provided in this embodiment is shown. As can be seen from the figure, the perovskite single crystal is transparent, indicating that it has very good single crystal quality.

[0099] Randomly select four pixel points in the perovskite single crystal X-ray area array detector prepared in this embodiment, and record them as the first pixel point, the second pixel point, the third pixel point, and the fourth pixel point respectively. In a dark environment and at a dose rate of 1680 μGry air / s, perform a current density - electric field curve test to obtain the curve of the X-ray response current density changing with the applied electric field, and the results are as Figure 2 shown. It can be seen from the figure that the perovskite single crystal X-ray area array detector has a high on-off ratio, indicating that it has high X-ray detection performance.

[0100] Example 2

[0101] This embodiment provides a perovskite single crystal X-ray area array detector. The perovskite single crystal X-ray area array detector includes a PCB board, a pixel point array, a metal-based solder ball array, a metal-based pad array, a perovskite single crystal, and a metal electrode that are stacked. Among them, the pixel point units in the pixel point array and the solder ball units in the metal-based solder ball array are connected in a one-to-one correspondence, and the solder ball units in the metal-based solder ball array and the pad units in the metal-based pad array are connected in a one-to-one correspondence.

[0102] Among them, the pixel point units in the pixel point array include TFT and CMOS, and the PCB board is electrically connected to the pixel point array; the material of the metal-based solder ball array is Sn62Pb36Ag2, and the diameter of the solder ball units in the metal-based solder ball array is 150 μm; the material of the metal-based pad array is Sn10Pb90, the thickness of the metal-based pad array is 60 nm, the size of the pad units in the metal-based pad array is 150 μm, and the spacing between the pad units is 100 μm; the crystal structure of the perovskite single crystal is three-dimensional; the metal electrode is a gold electrode with a thickness of 100 nm.

[0103] This embodiment also provides a flip-chip preparation method for the above perovskite single-crystal X-ray area array detector. The flip-chip preparation method includes the following steps:

[0104] (1) Dissolve CsBr and PbBr2 with a molar ratio of 1:2 in an organic solvent (composed of DMF and DMSO with a volume ratio of 1:9), stir at room temperature until the solution is transparent, then take 20 mL of the above solution and add tetradecyltrimethylammonium bromide to obtain a perovskite precursor solution. Then stir at 60 °C for 12 h, let it stand to room temperature, filter, take 10 mL of the filtered perovskite precursor solution and place it in a 20 mL wide-mouth reagent bottle, and seal the bottle mouth; wherein, the concentration of Pb ions in the perovskite precursor solution is 1 mol / L, and the concentration of tetradecyltrimethylammonium bromide is 0.25 mmol / mL.

[0105] Turn on the heating stage, heat the bath oil temperature to 50 °C, then place the reagent bottle containing the perovskite precursor solution in the bath oil, and then perform the first heat treatment to precipitate the seed crystal, then cool to 80 °C for the second heat treatment until the length of the perovskite single crystal grows to 4 mm. Subsequently, increase the temperature at a heating rate of 3 °C per day for the third heat treatment until the length of the perovskite single crystal grows to 8 mm. Stop heating the heating stage, take out the perovskite single crystal, wash it with isopropanol, and then place it in a blast drying oven at 80 °C for 1 h, take it out and store it in a glove box; wherein, the process of the first heat treatment includes a first heating process and a first constant temperature process. The initial temperature of the first heating process is 50 °C, and the heating rate is 5 °C / h. The temperature of the first constant temperature process is 85 °C.

[0106] Adopt the thermal evaporation method and use a mask plate for positioning to deposit a metal-based pad array with a thickness of 60 nm on the A surface of the perovskite single crystal.

[0107] (2) Provide a PCB board integrated with a pixel point array, and use the BGA ball mounting method to connect the metal-based ball array to the pixel point array, and the pixel point units in the pixel point array and the ball units in the metal-based ball array are connected in one-to-one correspondence.

[0108] (3) Align the metal-based pad array with the metal-based ball array through a ball mounting table, and then place them together in an infrared reflow soldering machine. Set the peak temperature to 180 °C, and perform thermal welding on the metal-based pad array and the metal-based ball array so that the ball units in the metal-based ball array and the pad units in the metal-based pad array are connected in one-to-one correspondence. After welding, the infrared reflow soldering machine cools to room temperature, and take out the flip-chip integrated combination.

[0109] (4) A metal layer with a thickness of 100 nm is deposited on the B side of the perovskite single crystal by thermal evaporation to serve as an electrode, completing the preparation of the perovskite single crystal X-ray area array detector.

[0110] Example 3

[0111] This example provides a perovskite single crystal X-ray area array detector, which includes a PCB board, a pixel point array, a metal-based solder ball array, a metal-based pad array, a perovskite single crystal, and a metal electrode arranged in a stacked manner; wherein, the pixel point units in the pixel point array are connected to the solder ball units in the metal-based solder ball array in a one-to-one correspondence, and the solder ball units in the metal-based solder ball array are connected to the pad units in the metal-based pad array in a one-to-one correspondence.

[0112] Among them, the pixel point units in the pixel point array include TFT and CMOS, and the PCB board is electrically connected to the pixel point array; the material of the metal-based solder ball array is Sn42Bi58, and the diameter of the solder ball units in the metal-based solder ball array is 200 μm; the material of the metal-based pad array is Sn96.5Ag3.0Cu0.5, the thickness of the metal-based pad array is 200 nm, the size of the pad units in the metal-based pad array is 200 μm, and the spacing between the pad units is 50 μm; the crystal structure of the perovskite single crystal is three-dimensional; the metal electrode is a gold electrode with a thickness of 100 nm.

[0113] This example also provides a flip-chip preparation method for the above perovskite single crystal X-ray area array detector, and the flip-chip preparation method includes the following steps:

[0114] (1) CsBr and PbBr2 with a molar ratio of 1:2 are dissolved in an organic solvent (composed of DMF and DMSO with a volume ratio of 1:9), stirred at room temperature until the solution is transparent, then 20 mL of the above solution is taken and octadecyltrimethylammonium bromide is added to obtain a perovskite precursor solution, which is then stirred at 60 °C for 12 h, allowed to stand to room temperature, filtered, and 10 mL of the filtered perovskite precursor solution is placed in a 20 mL wide-mouth reagent bottle, and the bottle mouth is sealed; wherein, the concentration of Pb ions in the perovskite precursor solution is 1.5 mol / L, and the concentration of octadecyltrimethylammonium bromide is 1.5 mmol / mL.

[0115] Turn on the heating stage, heat the bath oil temperature to 70°C, then place the reagent bottle containing the perovskite precursor solution in the bath oil, and then perform the first heat treatment to precipitate the seed crystals. Then cool down to 90°C for the second heat treatment until the length of the perovskite single crystal grows to 4 mm. Subsequently, increase the temperature at a rate of 7°C per day for the third heat treatment until the length of the perovskite single crystal grows to 8 mm. Stop heating the heating stage, take out the perovskite single crystal, wash it with isopropyl alcohol, and then place it in a blast drying oven at 80°C for 1 h. Take it out and store it in a glove box; wherein, the process of the first heat treatment includes a first heating process and a first constant temperature process. The initial temperature of the first heating process is 70°C, and the heating rate is 7°C / h. The temperature of the first constant temperature process is 100°C.

[0116] Adopt the thermal evaporation method and use a mask plate for positioning to deposit a metal-based pad array with a thickness of 200 nm on the A surface of the perovskite single crystal.

[0117] (2) Provide a PCB board integrated with a pixel point array, and use the BGA ball mounting method to connect the metal-based ball array to the pixel point array, and the pixel point units in the pixel point array and the ball units in the metal-based ball array are connected in one-to-one correspondence.

[0118] (3) Align the metal-based pad array with the metal-based ball array through a ball mounting table, and then place them together in an infrared reflow soldering machine. Set the peak temperature to 220°C, and perform thermal welding on the metal-based pad array and the metal-based ball array so that the ball units in the metal-based ball array and the pad units in the metal-based pad array are connected in one-to-one correspondence. After welding, the infrared reflow soldering machine cools to room temperature, and take out the combined body prepared by flip-chip integration.

[0119] (4) Adopt the thermal evaporation method to deposit a metal layer with a thickness of 100 nm on the B surface of the perovskite single crystal as an electrode to complete the preparation of the perovskite single crystal X-ray area array detector.

[0120] Example 4

[0121] The difference between this example and Example 1 is that a tin dioxide transmission layer with a thickness of 60 nm is provided between the metal-based pad array and the perovskite single crystal, and its deposition method is the thermal evaporation method.

[0122] The remaining preparation methods and parameters are the same as those in Example 1.

[0123] Example 5

[0124] The difference between this example and Example 4 is that a nickel oxide transmission layer with a thickness of 100 nm is provided between the perovskite single crystal and the metal electrode, and its deposition method is the magnetron sputtering method.

[0125] The remaining preparation methods and parameters are the same as those in Example 4.

[0126] Example 6

[0127] The difference between this example and Example 1 is that in the perovskite precursor solution in step (1), the concentration of dodecyltrimethylammonium bromide is 0.25 mmol / mL.

[0128] The remaining preparation methods and parameters are the same as those in Example 1.

[0129] Example 7

[0130] The difference between this example and Example 1 is that in the perovskite precursor solution in step (1), the concentration of dodecyltrimethylammonium bromide is 0.5 mmol / mL.

[0131] The remaining preparation methods and parameters are the same as those in Example 1.

[0132] Example 8

[0133] The difference between this example and Example 1 is that in the perovskite precursor solution in step (1), the concentration of dodecyltrimethylammonium bromide is 1 mmol / mL.

[0134] The remaining preparation methods and parameters are the same as those in Example 1.

[0135] Example 9

[0136] The difference between this example and Example 1 is that in the perovskite precursor solution in step (1), the concentration of dodecyltrimethylammonium bromide is 1.25 mmol / mL.

[0137] The remaining preparation methods and parameters are the same as those in Example 1.

[0138] Example 10

[0139] The difference between this example and Example 1 is that in the perovskite precursor solution in step (1), the concentration of dodecyltrimethylammonium bromide is 1.5 mmol / mL.

[0140] The remaining preparation methods and parameters are the same as those in Example 1.

[0141] Example 11

[0142] The difference between this example and Example 1 is that the diameter of the solder ball unit in the metal-based solder ball array is 100 μm.

[0143] The remaining preparation methods and parameters are the same as those in Example 1.

[0144] Example 12

[0145] The difference between this example and Example 1 is that the diameter of the solder ball unit in the metal-based solder ball array is 250 μm.

[0146] The remaining preparation methods and parameters are the same as those in Example 1.

[0147] Example 13

[0148] The difference between this example and Example 1 is that the thickness of the metal-based solder pad array is 50 nm.

[0149] The remaining preparation methods and parameters are the same as those in Example 1.

[0150] Example 14

[0151] The difference between this example and Example 1 is that the thickness of the metal-based solder pad array is 220 nm.

[0152] The remaining preparation methods and parameters are the same as those in Example 1.

[0153] Example 15

[0154] The difference between this example and Example 1 is that in the perovskite precursor solution in step (1), dodecyltrimethylammonium bromide is not added.

[0155] The remaining preparation methods and parameters are the same as those in Example 1.

[0156] Example 16

[0157] The difference between this example and Example 1 is that in the perovskite precursor solution in step (1), the concentration of dodecyltrimethylammonium bromide is 0.2 mmol / mL.

[0158] The remaining preparation methods and parameters are the same as those in Example 1.

[0159] Example 17

[0160] The difference between this example and Example 1 is that in the perovskite precursor solution in step (1), the concentration of dodecyltrimethylammonium bromide is 1.75 mmol / mL.

[0161] The remaining preparation methods and parameters are the same as those in Example 1.

[0162] Example 18

[0163] The difference between this example and Example 1 is that in step (1), the heating rate of the third heat treatment is 5 °C / h.

[0164] The remaining preparation methods and parameters are the same as those in Example 1.

[0165] Comparative Example 1

[0166] The difference between this comparative example and Example 1 is that the metal-based solder ball array is not provided.

[0167] The remaining preparation methods and parameters are the same as those in Example 1.

[0168] Comparative Example 2

[0169] The difference between this comparative example and Example 1 is that the metal-based pad array is not provided.

[0170] The remaining preparation methods and parameters are the same as those in Example 1.

[0171] Performance Test

[0172] I. The perovskite single crystal X-ray area array detectors prepared in the above examples and comparative examples were tested for electrical properties using current-voltage curves, including dark current and resistivity.

[0173] II. The sample to be tested was placed between the X-ray source and the perovskite single crystal X-ray area array detector (prepared in the above examples and comparative examples). The distances among the X-ray source, the sample to be tested, and the perovskite single crystal X-ray area array detector were adjusted to be appropriate. Then, the imaging performance of the perovskite single crystal X-ray area array detector under an external bias voltage (0 V to 10 V) was measured, and data were collected.

[0174] The above test results are shown in Table 1.

[0175] Table 1

[0176]

[0177]

[0178] Analysis:

[0179] It can be seen from the comparison between Example 1 and Example 4 that setting the electron transport layer can directly avoid the direct contact between the perovskite single crystal and the metal-based pad array. At the same time, it can passivate the surface of the perovskite single crystal, reduce the surface trap / defect density, and improve the detection performance and long-term working stability of the perovskite single crystal X-ray area array detector.

[0180] It can be seen from the comparison between Example 4 and Example 5 that setting the hole transport layer between the perovskite single crystal and the metal electrode helps to improve the hole transport rate, so as to form an effective current signal faster for subsequent detection and processing.

[0181] Comparing Example 1 with Examples 6 - 10 and Example 15, it can be seen that additives with appropriate concentrations contribute to assisting in the growth of large-sized high-quality perovskite single crystals, thereby reducing the surface trap / defect density and improving the detection performance of perovskite single crystal X-ray area array detectors.

[0182] Comparing Example 1 with Examples 11 - 12, it can be seen that if the diameter of the solder ball units in the metal-based solder ball array is too small, it is not conducive to improving the mechanical bonding performance between the perovskite single crystal and the pixel point array; if the diameter of the solder ball units in the metal-based solder ball array is too large, it is not conducive to improving the electrical connection performance between the perovskite single crystal and the pixel point array.

[0183] Comparing Example 1 with Examples 13 - 14, it can be seen that if the thickness of the metal-based solder pad array is too small, it is not conducive to improving the mechanical bonding performance between the perovskite single crystal and the pixel point array; if the thickness of the metal-based solder pad array is too large, it is not conducive to improving the electrical connection performance between the perovskite single crystal and the pixel point array.

[0184] Comparing Example 1 with Examples 16 - 17, it can be seen that if the concentration of the additive in the perovskite precursor solution is too small, the modification effect is weak and no obvious effect can be achieved; if the concentration of the additive in the perovskite precursor solution is too large, it is not conducive to controllably adjusting the growth rate, single crystal size and quality of perovskite single crystals.

[0185] Comparing Example 1 with Example 18, it can be seen that if the heating rate of the third heat treatment is too large, the crystallization quality of the perovskite single crystal will be reduced.

[0186] Comparing Example 1 with Comparative Example 1, it can be seen that if the metal-based solder ball array is not provided, good mechanical and electrical connection performance between the pixel point array and the perovskite single crystal cannot be achieved.

[0187] Comparing Example 1 with Comparative Example 2, it can be seen that if the metal-based solder pad array is not provided, there is no connected anchor point between the metal-based solder ball array and the perovskite single crystal, resulting in a decrease in the contact performance between the metal-based solder ball array and the perovskite single crystal and poor detection performance of the perovskite single crystal X-ray area array detector.

[0188] It should be noted that the present invention uses the above examples to illustrate the process method of the present invention, but the present invention is not limited to the above process steps, that is, it does not mean that the present invention must rely on the above process steps to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the raw materials selected by the present invention, addition of auxiliary components, selection of specific methods, etc. all fall within the protection scope and public scope of the present invention.

Claims

1. A perovskite-based surface array detector, characterized in that: The perovskite-based surface array detector includes a stacked substrate, a pixel array, a metal-based solder ball array, a metal-based pad array, a perovskite layer and an electrode; wherein the pixel units in the pixel array and the solder ball units in the metal-based solder ball array are connected one-to-one, and the solder ball units in the metal-based solder ball array and the pad units in the metal-based pad array are connected one-to-one.

2. The perovskite-based surface array detector according to claim 1, characterized in that: The pixel point units in the pixel point array include TFT and / or CMOS; Preferably, the substrate is a printed circuit board; Preferably, the substrate is electrically connected to the pixel array.

3. The perovskite-based surface array detector according to claim 1 or 2, characterized in that: The metal-based solder ball array and the metal-based solder pad array are made of single metal or metal alloy; Preferably, the metal element comprises tin, gold, lead, antimony, silver, copper or Any of the following: Preferably, the metal alloy comprises a tin alloy; Preferably, the diameter of the solder ball unit in the metal-based solder ball array is 150-200 μm; Preferably, the thickness of the metal-based pad array is 60-200 nm; Preferably, the diameter of the pad unit in the metal-based pad array is 100-200 μm, and the spacing between the pad units is 50-100 μm.

4. The perovskite-based surface array detector according to any one of claims 1 to 3, characterized in that: The perovskite layer is a perovskite single crystal; Preferably, the size of the perovskite single crystal at least meets the following conditions: 12-32 mm in length and 1-3 mm in height; Preferably, the crystal structure of the perovskite single crystal is any one of zero-dimensional, one-dimensional, two-dimensional or three-dimensional.

5. The perovskite-based surface array detector according to any one of claims 1 to 4, characterized in that: The electrode comprises any one of a metal electrode, a carbon electrode or a transparent electrode; Preferably, the electrode has a layer thickness of 80-120 nm; Preferably, a first charge transport layer is provided between the metal-based pad array and the perovskite layer; Preferably, the first charge transport layer is an electron transport layer, and the electron transport layer is a metal oxide transport layer or an organic transport layer; Preferably, the thickness of the metal oxide transport layer is 40-80 nm; Preferably, the thickness of the organic transport layer is 10-40 nm; Preferably, a second charge transport layer is provided between the perovskite layer and the electrode, and the charges transported by the second charge transport layer and the first charge transport layer have opposite electrical properties; Preferably, the second charge transport layer is an electron transport layer or a hole transport layer; Preferably, the hole transport layer has a thickness of 10-200 nm.

6. A method for flip-chip preparation of a perovskite-based surface array detector according to any one of claims 1 to 5, characterized in that: The inverted chip preparation method comprises the following steps: Prepare a perovskite layer, and deposit a metal-based pad array on the A surface of the perovskite layer; Providing a substrate integrated with a pixel array, so that a metal-based solder ball array is connected to the pixel array, and the pixel units in the pixel array and the solder ball units in the metal-based solder ball array are connected one-to-one; The metal-based pad array and the metal-based solder ball array are heat-treated so that the solder ball units in the metal-based solder ball array are connected one-to-one with the solder pad units in the metal-based pad array, and then electrodes are deposited on the B surface of the perovskite layer to obtain the perovskite-based surface array detector.

7. The flip-chip preparation method according to claim 6, characterized in that: The preparation method of the perovskite layer includes an inversion crystal growth method; Preferably, the specific steps of the inversion crystallization growth method include: Dissolving AX and BX2 in an organic solvent to obtain a perovskite precursor solution; wherein A is a monovalent metal cation or a monovalent organic cation, B is a metal cation, and X is a halogen anion; The perovskite precursor solution is subjected to a first heat treatment to precipitate seed crystals, then the temperature is lowered to perform a second heat treatment, and then the temperature is raised to perform a third heat treatment to obtain a perovskite single crystal; Preferably, the molar ratio of AX to BX2 is 1:(1-2); Preferably, the perovskite precursor solution further contains an additive, wherein the additive includes alkyltrimethylammonium bromide; Preferably, in the perovskite precursor solution, the concentration of the additive is 0.25-1.5 mmol / mL; Preferably, the first heat treatment process includes a first temperature rise process and a first constant temperature process, the initial temperature of the first temperature rise process is 50-70° C., and the temperature of the first constant temperature process is 85-100° C.; Preferably, the second heat treatment includes a second constant temperature process, and the temperature of the second constant temperature process is 80-90°C; Preferably, the third heat treatment is a second temperature rising process, and the temperature rising rate of the second temperature rising process is 3-7°C / day.

8. The flip-chip preparation method according to claim 6 or 7, characterized in that: The deposition method of the metal-based pad array includes a thermal evaporation method or a magnetron sputtering method; Preferably, the method of connecting the metal-based solder ball array to the pixel array includes a ball planting method; Preferably, the hot melting temperature of the raw material for preparing the metal-based pad array is greater than 200° C., and the hot melting temperature of the raw material for preparing the metal-based solder ball array is less than 200° C.; Preferably, the temperature of the heat treatment is less than or equal to 220°C; Preferably, the electrode deposition method includes thermal evaporation or magnetron sputtering.

9. The flip-chip preparation method according to any one of claims 6 to 8, characterized in that: The inverted chip preparation method comprises the following steps: (1) dissolving AX and BX2 in an organic solvent at a molar ratio of 1:(1-2), and then adding an additive to obtain a perovskite precursor solution; wherein the concentration of the metal cation at the B position in the perovskite precursor solution is 1-1.5 mol / L, and the additive includes alkyltrimethylammonium bromide, and the concentration of the additive is 0.25-1.5 mmol / mL; The perovskite precursor solution is subjected to a first heat treatment to precipitate a seed crystal, and then the temperature is lowered to 80-90°C for a second heat treatment until the length of the perovskite single crystal grows to 4 mm, and then the temperature is increased at a heating rate of 3-7°C / day, and a third heat treatment is performed until the length of the perovskite single crystal grows to 8 mm, thereby obtaining a perovskite single crystal; wherein the first heat treatment process includes a first heating process and a first constant temperature process, wherein the initial temperature of the first heating process is 50-70°C, the heating rate is 5-7°C / h, and the temperature of the first constant temperature process is 85-100°C; Depositing an electron transport layer on the A surface of the perovskite single crystal, and then positioning using a mask to deposit a metal-based pad array with a thickness of 60-200 nm on the electron transport layer; (2) providing a printed circuit board integrated with a pixel array, and using a ball planting method to connect a metal-based solder ball array to the pixel array, and connecting pixel units in the pixel array and solder ball units in the metal-based solder ball array in a one-to-one correspondence; (3) heat treating the metal-based pad array and the metal-based solder ball array at a temperature less than or equal to 220° C., so that the solder ball units in the metal-based solder ball array are connected to the solder pad units in the metal-based pad array in a one-to-one correspondence; (4) A metal layer with a thickness of 80-120 nm is deposited on the B surface of the perovskite single crystal as an electrode to complete the preparation of the perovskite-based surface array detector.

10. An application of the perovskite-based surface array detector according to any one of claims 1 to 5, characterized in that: The perovskite-based surface array detector is used in the fields of ultraviolet and visible light detection imaging, X-ray detection imaging and gamma-ray detection imaging.

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