A continuous reaction cooling device and cooling method for silicon wafers after chemical vapor deposition

Abstract

The present invention discloses a device and method for cooling silicon wafers after chemical vapor deposition (CVD), which relate to the technical field of semiconductor production and manufacturing. The device comprises: a base, a workbench fixedly mounted on the top surface of the base, a connecting plate and a processor fixedly mounted on the side walls of the base, two brackets provided on the top surface of the base, a fixing plate fixedly mounted on the right side wall of the bracket, and a second graphite placement seat fixedly mounted at the center of the top surface of the fixing plate. In the present invention, the silicon wafer is subjected to non-contact clamping and cooling by the cooling gas ejected by the first and second nozzles, which effectively avoids the possible damage and contamination of the silicon wafer caused by the direct clamping of the high-temperature silicon wafer by a traditional manipulator, greatly improves the safety and cleanliness of the silicon wafer cooling process, and ensures the quality of the silicon wafer. At the same time, the cooperation of the laser rangefinder and the reflective plate, as well as the data processing and precise regulation of the exhaust pump by the processor, realizes the dynamic adjustment of the cooling gas flow and pressure according to the cooling state of the silicon wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor production and manufacturing, and in particular to a device and method for cooling a silicon wafer after chemical vapor deposition. Background Art

[0002] In semiconductor manufacturing, surface deposition is a key process for treating silicon wafers. This process utilizes chemical vapor deposition (CVD) to chemically react a silicon wafer with a gas, depositing an oxide layer on the wafer surface. This oxide layer reduces or eliminates light reflection from the wafer surface, increasing light transmission and ultimately improving the wafer's photoelectric conversion efficiency. Therefore, CVD equipment is widely used in semiconductor production.

[0003] In traditional semiconductor manufacturing processes, the cooling methods for silicon wafers after the chemical vapor deposition reaction are relatively simple. Natural cooling accounts for a certain proportion of this, relying solely on the natural heat dissipation of the surrounding environment and lacking a dedicated, efficient heat dissipation mechanism. As a result, the heat dissipation of the silicon wafer is extremely slow. In large-scale silicon wafer production scenarios, the additional time consumed by natural cooling for each silicon wafer accumulates, seriously slowing down the overall production rhythm and significantly extending the production cycle, making it difficult to meet the stringent requirements of modern industry for efficient and fast production.

[0004] Another common traditional practice is to use a robot to directly grab high-temperature silicon wafers and transfer them to a specific cooling area. However, when silicon wafers are at high temperatures, their internal crystal structure and physical properties will change, and the material will become relatively fragile, just like glass is more easily broken at high temperatures. When the robot grasps such fragile silicon wafers, even a slight change in pressure or a small displacement deviation is very likely to leave irreparable scratches on the surface of the silicon wafer, or even cause cracks. In severe cases, it will directly cause the silicon wafer to break and be scrapped, causing the silicon wafer scrap rate to rise sharply. Moreover, the material properties of the robot itself will also suffer severe erosion when performing tasks in a high-temperature environment for a long time. The continuous action of high temperature makes the metal parts of the robot prone to softening and oxidation, resulting in a decrease in its structural strength, and then frequent wear and deformation and other problems. This seriously affects the stability and continuity of production. In addition, during the cooling process, the heat dissipation conditions in different parts of the silicon wafer vary greatly, making it difficult to maintain a uniform cooling rate. This uneven cooling will generate thermal stress inside the silicon wafer. The continued action of thermal stress will cause irreversible damage to the internal crystal structure of the silicon wafer, thereby changing the electrical properties of the silicon wafer. For example, it will affect its key parameters such as resistivity and carrier mobility. It will also weaken the mechanical properties of the silicon wafer and reduce its hardness and toughness. The degradation of these properties is directly reflected in the decline in the quality of the silicon wafer and the reduction in the yield rate. It has buried hidden dangers for the subsequent manufacture of semiconductor devices and seriously threatened the performance and reliability of semiconductor devices in actual applications.

[0005] Therefore, based on the above search and in combination with the existing technology, a continuous reaction cooling device and cooling method for silicon wafers after chemical vapor deposition are proposed to solve the above problems. Summary of the Invention

[0006] The object of the present invention is to provide a device and method for cooling silicon wafers after chemical vapor deposition (CVD) to continuously react and cool them, so as to solve the problems raised in the above-mentioned background technology.

[0007] To achieve the above object, the present invention provides the following technical solutions:

[0008] A device for continuous reaction cooling of silicon wafers after chemical vapor deposition comprises: a base, a workbench is fixedly mounted on the top surface of the base, a connecting plate and a processor are fixedly mounted on the side wall of the base, two brackets are provided on the top surface of the base, a fixing plate is fixedly mounted on the right side wall of the bracket, a second graphite placement seat is fixedly mounted at the center of the top surface of the fixing plate, a distribution box is fixedly mounted on the front side wall of the workbench, a controller is provided on one side of the distribution box, a mechanical clamp is fixedly mounted on the top surface of the connecting plate, the end of the mechanical clamp clamps the first graphite placement seat and is provided with a groove for placing high-temperature silicon wafers; a moving plate is installed on the workbench through a moving assembly, and a mechanical clamp is fixedly mounted on the top surface of the moving plate. Arm, a nozzle 1 is fixedly installed at the output end of the robotic arm, a reflector is fixedly installed on one side wall of the nozzle head, a storage box and an exhaust pump are fixedly installed on the rear side wall of the workbench, a connecting pipe 1 is provided between the storage box and the exhaust pump, a connecting pipe 2 is provided between the exhaust pump and the nozzle head, a driving plate is installed on the bracket through a driving assembly, a circular groove is provided on the top surface of the driving plate, a concave plate is fixedly installed on the top surface of the driving plate, an electric push rod is fixedly installed on the bottom surface of the concave plate, a nozzle 2 is fixedly installed on the output shaft of the electric push rod, a laser rangefinder is fixedly installed on the bottom surface of the nozzle head 2, a connecting pipe 3 connected to the connecting pipe 2 is provided on one side of the nozzle head 2, and a ball valve is provided in the connecting pipe 3.

[0009] Preferably, the moving component includes: a drive motor 1, which is fixedly installed on the right side wall of the workbench, a moving groove is opened on the top surface of the workbench, a threaded rod 1 is rotatably connected to the inner wall of the moving groove, and a moving block is threadedly connected to the outer surface of the threaded rod, the moving block moves in the moving groove and the top surface is connected to the bottom surface of the moving plate, and the output shaft of the drive motor 1 is connected to the right side wall of the threaded rod 1.

[0010] Preferably, the driving assembly includes: two limit plates, the two limit plates are respectively fixedly mounted on the right side walls of the two brackets, and a sliding groove is provided on the top surface of each bracket, the inner wall of one of the sliding grooves is rotatably connected to a threaded rod 2, and the outer surface of the threaded rod 2 is threadedly connected to a slider, the slider moves in the sliding groove and the top surface is connected to the bottom surface of the driving plate, and a driving motor 2 is fixedly mounted on the right side wall of one of the limit plates, and the output shaft of the driving motor 2 is connected to the right side wall of the threaded rod 2.

[0011] The present invention also provides a method for continuous reaction cooling of silicon wafers after chemical vapor deposition, which is applied to any one of the above-mentioned devices for continuous reaction cooling of silicon wafers after chemical vapor deposition, and comprises the following steps:

[0012] S1. Preliminary preparation step of the equipment: providing a cooling device as described in claims 1-3.

[0013] Preferably, the operation of S2, cooling the silicon wafer, is as follows:

[0014] S21. When cooling is required, the controller adjusts the robotic arm so that the nozzle is directly above the graphite placement seat;

[0015] S22. Before turning on the exhaust pump, first accurately adjust the gas flow and pressure of the nozzle one through the controller to ensure that the ejected airflow can form a stable supporting force. When the exhaust pump is turned on, the cooling gas is ejected from the nozzle one at a certain speed and pressure to form an airflow field. At this time, the robotic arm cooperates with the mechanical gripper to rotate the graphite placement seat one and the silicon wafer thereon by 180° so that the silicon wafer faces downward. During the rotation process, due to the impact and support of the airflow ejected from the nozzle one on the silicon wafer, the silicon wafer is stably pressed inside the groove of the graphite placement seat one to prevent it from falling off. Next, the mechanical gripper slowly moves up while keeping the airflow ejected from the nozzle one stable. As the graphite placement seat one gradually rises, the silicon wafer The wafer begins to float above nozzle 1 under the support force of the airflow. To achieve stable suspension, the controller needs to monitor the position of the silicon wafer and the airflow intensity ejected by nozzle 1 in real time, and make fine adjustments as needed. By precisely controlling the size and direction of the airflow, it can ensure that the silicon wafer remains relatively stable in the suspended state to avoid excessive displacement or shaking. When the silicon wafer is in the suspended state, nozzle 1 continues to eject cooling gas to cool one side of the silicon wafer. Since the support force formed by the airflow matches the gravity of the silicon wafer, the silicon wafer can maintain a stable suspension state, thereby avoiding damage that may be caused by the robot directly clamping the high-temperature silicon wafer. At the same time, the flow of cooling gas also helps to accelerate the cooling process of the silicon wafer.

[0016] Preferably, S3, the step of cooling the other side of the silicon wafer is:

[0017] S31. When the laser emitted by the laser rangefinder is at the center of the reflector, the ball valve in the connecting pipe 3 is opened to allow cooling gas to be injected into the second nozzle to cool the other side of the silicon wafer.

[0018] S32. By turning on the electric push rod to lower the nozzle head 2, when the laser rangefinder detects that it is close to the reflector, the processor processes the data and converts it into an exhaust pump electrical signal to increase the exhaust pump power to the maximum power to achieve rapid cooling, and the cooling gas ejected from the nozzle head 1 and the nozzle head 2 will clamp the silicon wafer without touching the silicon wafer.

[0019] Preferably, S4, while nozzle head one and nozzle head two are cooling and clamping the silicon wafer, the gases released by nozzle head one and nozzle head two are precisely pressure and flow controlled to ensure that the two gases form stable and uniform convection on the surface of the silicon wafer. When the cooling of the silicon wafer is completed, the ball valve in connecting pipe three is closed and the vacuum pump is turned on. The vacuum suction pipe draws the air in nozzle head two so that the silicon wafer is adsorbed on the bottom surface of nozzle head two, and then the moving component and the driving component move synchronously.

[0020] Preferably, S5, the step of transferring the silicon wafer after cooling is as follows:

[0021] S51, when the moving assembly reaches the rightmost side, the driving assembly has not yet reached the rightmost side. At this time, the driving assembly continues to move, and the mechanical arm on the moving assembly is started, so that the nozzle head 1 is always directly below the nozzle head 2, and the cooling gas is sprayed on the silicon wafer below the nozzle head 2 to prevent the silicon wafer from falling during the movement. When the driving assembly moves to the rightmost side, the silicon wafer is directly above the graphite placement seat 2. At this time, the nozzle head 1 stops working, and the mechanical arm is started to withdraw the nozzle head 1 from under the nozzle head 2. Then, the electric push rod is started to place the silicon wafer in the inner groove of the graphite placement seat 2, and then the vacuum pump stops working;

[0022] S52, the electric push rod then drives the second jet head to rise, and the moving assembly and the driving assembly both move to the leftmost starting position;

[0023] S53: The cooled silicon wafer is transported to the next step by a robot and the above operation is repeated to cool the silicon wafer.

[0024] Preferably, during the entire cooling process, each component works in an orderly manner under the coordinated control of the controller and the processor, ensuring the efficiency and stability of the silicon wafer cooling and transfer process, and ensuring that the quality of the silicon wafer is not damaged.

[0025] Compared with the prior art, the present invention has the following beneficial effects:

[0026] 1. In the present invention, the cooling gas ejected from the first and second nozzles is used to perform non-contact clamping and cooling of the silicon wafer, effectively avoiding the damage and contamination problems that may be caused by the traditional manipulator directly gripping the high-temperature silicon wafer. This greatly improves the safety and cleanliness of the silicon wafer cooling process and ensures the quality of the silicon wafer. At the same time, the combination of the laser rangefinder and the reflector, as well as the processor's data processing and precise control of the exhaust pump, realizes the dynamic adjustment of the cooling gas flow and pressure according to the cooling state of the silicon wafer, making the cooling process more efficient and uniform, significantly shortening the time required for silicon wafer cooling, and improving production efficiency.

[0027] 2. In the present invention, by providing a moving component and a driving component, they move synchronously and cooperatively, and their moving distance is closely matched with the cooling time of the silicon wafer, thereby achieving seamless connection between cooling and transfer operations, reducing equipment idle time and operating steps, and further improving overall production efficiency. Moreover, the entire cooling process is under the precise coordinated control of the controller and processor, and each component runs in an orderly manner, which not only reduces the complexity and error probability of manual operation, but also enhances the stability and reliability of equipment operation, provides strong technical support for the semiconductor production and manufacturing process, helps to reduce production costs, and improves the market competitiveness of products. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the left side structure of the present invention;

[0029] Figure 2 It is a schematic diagram of the structure on the right side of the present invention;

[0030] Figure 3 This is a schematic diagram of the rear structure of the present invention;

[0031] Figure 4 This is a schematic diagram of the structure of the present invention when viewed from above;

[0032] Figure 5 This is a schematic diagram of the split structure of the mobile component of the present invention;

[0033] Figure 6 This is a schematic diagram of the split structure of the drive assembly of the present invention;

[0034] Figure 7 This is a bottom view of the structure of the driving plate of the present invention;

[0035] Figure 8 For the present invention Figure 2 Enlarged structural diagram at point A in the middle.

[0036] In the figure: 1. Base; 2. Workbench; 3. Connecting plate; 4. Bracket; 5. Distribution box; 6. Controller; 7. Processor; 8. Mechanical gripper; 9. Graphite placement seat 1; 10. Moving plate; 11. Mechanical arm; 12. Nozzle 1; 13. Reflection plate; 14. Storage box; 15. Exhaust pump; 16. Connecting pipe 1; 17. Connecting pipe 2; 18. Drive plate; 19. Circular groove; 20. Concave plate; 21. Electric push rod; 22. Nozzle 2; 23. Laser rangefinder; 24. Connecting pipe 3; 25. Vacuum pump; 26. Vacuum suction pipe; 27. Drive motor 1; 28. Moving groove; 29. ​​Threaded rod 1; 30. Moving block; 31. Limit plate; 32. Slide groove; 33. Threaded rod 2; 34. Slider; 35. Drive motor 2; 36. Fixed plate; 37. Graphite placement seat 2. DETAILED DESCRIPTION

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0038] In a typical implementation of this application, please refer to Figures 1 to 8As shown, it includes: a base 1, a workbench 2 is fixedly installed on the top surface of the base 1, a connecting plate 3 and a processor 7 are fixedly installed on the side wall of the base 1, two brackets 4 are provided on the top surface of the base 1, a fixing plate 36 is fixedly installed on the right side wall of the bracket 4, a graphite placement seat 2 37 is fixedly installed at the center of the top surface of the fixing plate 36, a distribution box 5 is fixedly installed on the front side wall of the workbench 2, a controller 6 is provided on one side of the distribution box 5, a mechanical clamp 8 is fixedly installed on the top surface of the connecting plate 3, the end of the mechanical clamp 8 clamps the graphite placement seat 1 9 and is provided with a groove for placing high-temperature silicon wafers;

[0039] A movable plate 10 is installed on the workbench 2 through a movable assembly, and a mechanical arm 11 is fixedly installed on the top surface of the movable plate 10, and a nozzle 12 is fixedly installed on the output end of the mechanical arm 11, and a reflector 13 is fixedly installed on the side wall of the nozzle 12. A storage box 14 and an exhaust pump 15 are fixedly installed on the rear side wall of the workbench 2, a connecting pipe 16 is provided between the storage box 14 and the exhaust pump 15, and a connecting pipe 2 17 is provided between the exhaust pump 15 and the nozzle 12. A driving plate 18 is installed on the bracket 4 through a driving assembly, and a circular groove 19 is provided on the top surface of the driving plate 18, a concave plate 20 is fixedly installed on the top surface of the driving plate 18, and an electric push rod 21 is fixedly installed on the bottom surface of the concave plate 20, and a nozzle 2 22 is fixedly installed on the output shaft of the electric push rod 21, and a laser rangefinder 23 is fixedly installed on the bottom surface of the nozzle 22. A connecting pipe 3 24 connected to the connecting pipe 2 17 is provided on one side of the nozzle 22, and a ball valve is provided in the connecting pipe 3 24.

[0040] The moving component includes: a drive motor 27, which is fixedly installed on the right side wall of the workbench 2. A moving groove 28 is provided on the top surface of the workbench 2. A threaded rod 29 is rotatably connected to the inner wall of the moving groove 28. A moving block 30 is threadedly connected to the outer surface of the threaded rod 29. The moving block 30 moves in the moving groove 28 and its top surface is connected to the bottom surface of the moving plate 10. The output shaft of the drive motor 27 is connected to the right side wall of the threaded rod 29.

[0041] The driving assembly includes: two limit plates 31, which are respectively fixedly mounted on the right side walls of the two brackets 4. A slide groove 32 is provided on the top surface of the bracket 4. The inner wall of one of the slide grooves 32 is rotatably connected to a threaded rod 2 33, and the outer surface of the threaded rod 2 33 is threadedly connected to a slider 34. The slider 34 moves in the slide groove 32 and the top surface is connected to the bottom surface of the driving plate 18. A drive motor 2 35 is fixedly mounted on the right side wall of one of the limit plates 31, and the output shaft of the drive motor 2 35 is connected to the right side wall of the threaded rod 2 33.

[0042] See also Figures 1 to 8 As shown, the present invention also provides a method for continuous reaction cooling of silicon wafers after chemical vapor deposition, which is applied to any one of the above-mentioned devices for continuous reaction cooling of silicon wafers after chemical vapor deposition, and the method comprises the following steps:

[0043] S1. The preliminary preparation steps of the equipment are as described above;

[0044] S2. The operation of cooling the silicon wafer is as follows:

[0045] S21, when cooling is required, the controller 6 adjusts the robot arm 11 so that the nozzle 12 is directly above the graphite placement seat 9;

[0046] S22. Before turning on the exhaust pump 15, the gas flow and pressure of the nozzle 12 are first precisely adjusted through the controller 6 to ensure that the ejected airflow can form a stable supporting force. When the exhaust pump 15 is turned on, the cooling gas is ejected from the nozzle 12 at a certain speed and pressure to form an airflow field. At this time, the robotic arm 11 cooperates with the mechanical gripper 8 to rotate the graphite placement seat 9 and the silicon wafer thereon by 180° so that the silicon wafer faces downward. During the rotation, due to the impact and support of the airflow ejected from the nozzle 12 on the silicon wafer, the silicon wafer is stably pressed inside the groove of the graphite placement seat 9 to prevent it from falling off. Next, the mechanical gripper 8 slowly moves upward while keeping the airflow ejected from the nozzle 12 stable. As the graphite placement seat 9 rotates, the silicon wafer is rotated by 180°. The silicon wafer gradually rises, and the silicon wafer begins to float above the nozzle head 12 under the support force of the airflow. In order to achieve stable suspension, the controller 6 needs to monitor the position of the silicon wafer and the airflow intensity ejected by the nozzle head 12 in real time, and make fine adjustments as needed. By precisely controlling the size and direction of the airflow, it can ensure that the silicon wafer remains relatively stable in the suspended state to avoid excessive displacement or shaking. When the silicon wafer is in the suspended state, the nozzle head 12 continues to eject cooling gas to cool one side of the silicon wafer. Since the support force formed by the airflow matches the gravity of the silicon wafer, the silicon wafer can maintain a stable suspension state, thereby avoiding damage that may be caused by the robot directly clamping the high-temperature silicon wafer. At the same time, the flow of cooling gas also helps to accelerate the cooling process of the silicon wafer.

[0047] It is worth mentioning that in order to ensure the stability and safety of the silicon wafer during the suspension and cooling process, the following measures can also be taken:

[0048] A guide plate is provided around the nozzle 12 to guide the airflow and reduce the turbulence of the airflow;

[0049] A feedback control mechanism is set in the controller 6 to adjust the gas flow and pressure of the nozzle 12 in real time according to the position and status of the silicon wafer;

[0050] When the silicon wafer is in a suspended state, the distance between the silicon wafer and the air jet head 12 is monitored in real time by a laser rangefinder or other sensors to ensure that the silicon wafer is always in an optimal suspended position.

[0051] S3. The steps for cooling the other side of the silicon wafer are as follows:

[0052] S31. When the laser emitted by the laser rangefinder 23 is at the center of the reflector 13, the ball valve in the connecting pipe 3 24 is opened to allow cooling gas to be injected into the nozzle 2 22 to cool the other side of the silicon wafer.

[0053] S32. By turning on the electric push rod 21 to lower the nozzle head 22, when the laser rangefinder 23 detects that it is close to the reflector 13, the processor 7 processes the data and converts it into an electrical signal for the exhaust pump 15 to increase the power of the exhaust pump 15 to the maximum power to achieve rapid cooling, and the cooling gas ejected from the nozzle head 12 and the nozzle head 2 22 will clamp the silicon wafer without contacting the silicon wafer.

[0054] S4. While nozzle head 1 (12) and nozzle head 2 (22) are cooling and clamping the silicon wafer, the gases released by nozzle head 1 (12) and nozzle head 2 (22) are precisely controlled in pressure and flow to ensure that the two gases form a stable and uniform convection on the surface of the silicon wafer. When the cooling of the silicon wafer is completed, the ball valve in connecting pipe 3 (24) is closed and the vacuum pump (25) is turned on. The vacuum suction pipe (26) extracts the air in nozzle head 2 (22) so that the silicon wafer is adsorbed on the bottom surface of nozzle head 2 (22). Then the moving component and the driving component move synchronously.

[0055] S5. After cooling, the silicon wafer transfer steps are as follows:

[0056] S51, when the moving assembly reaches the rightmost side, the driving assembly has not yet reached the rightmost side. At this time, the driving assembly continues to move, and the mechanical arm 11 on the moving assembly is started, so that the nozzle head 12 is always directly below the nozzle head 22, and the cooling gas is sprayed on the silicon wafer below the nozzle head 22 to prevent the silicon wafer from falling during the movement. When the driving assembly moves to the rightmost side, the silicon wafer is directly above the graphite placement seat 2 37. At this time, the nozzle head 12 stops working, and the mechanical arm 11 is started to withdraw the nozzle head 12 from under the nozzle head 22. After that, the electric push rod 21 is started to place the silicon wafer in the inner groove of the graphite placement seat 2 37, and then the vacuum pump 25 stops working;

[0057] S52, the electric push rod 21 then drives the second nozzle 22 to rise, and the moving assembly and the driving assembly both move to the leftmost starting position;

[0058] S53: The cooled silicon wafer is transported to the next step by a robot and the above operation is repeated to cool the silicon wafer.

[0059] During the entire cooling process, all components work in an orderly manner under the coordinated control of the controller 6 and the processor 7, ensuring the efficiency and stability of the silicon wafer cooling and transfer process, and ensuring that the quality of the silicon wafer is not damaged.

[0060] Working principle:

[0061] When using, first make preliminary preparations for the equipment. The silicon wafer continuous reaction cooling device of the chemical vapor deposition equipment has been installed and debugged. The base 1 of the device provides stable support for the entire device. The workbench 2 on its top is used to carry other key components. The connecting plate 3 and the processor 7 are installed on the side wall of the base 1. Two brackets 4 stand on the top surface of the base 1. The graphite placement seat 2 37 on the fixed plate 36 on the right side wall of the bracket 4 is used for the subsequent placement of the cooled silicon wafers. The distribution box 5 on the front side wall of the workbench 2 supplies power to the device, and the controller 6 on one side controls the operation of each component. The mechanical clamp 8 on the top surface of the connecting plate 3 tightly clamps the graphite placement seat 1 9 with the high-temperature silicon wafer, and the silicon wafer is placed in the groove of the graphite placement seat 1 9;

[0062] When the silicon wafer needs to be cooled, the controller 6 will precisely adjust the robotic arm 11 so that the nozzle 12 at the output end of the robotic arm 11 is directly above the graphite placement seat 9. Then the exhaust pump 15 is turned on, and the cooling gas in the storage box 14 enters the exhaust pump 15 through the connecting pipe 16, and is then injected into the nozzle 12 through the connecting pipe 2 17 and ejected. On the one hand, the ejected cooling gas fixes the silicon wafer and prevents it from moving; on the other hand, the robotic arm 11 and the mechanical gripper 8 cooperate with each other to rotate the graphite placement seat 9 180 degrees and move it upward, so that the silicon wafer is suspended above the nozzle 12, thereby cooling one side of the silicon wafer and effectively avoiding damage that may be caused by the robotic arm directly clamping the high-temperature silicon wafer.

[0063] When cooling the other side of the silicon wafer, when the laser emitted by the laser rangefinder 23 on the bottom surface of the nozzle head 2 22 is at the exact center of the reflective plate 13 on the side wall of the nozzle head 1 12, the controller 6 opens the ball valve in the connecting pipe 3 24, and the cooling gas is injected from the connecting pipe 2 17 through the connecting pipe 3 24 into the nozzle head 2 22 to cool the other side of the silicon wafer. As the electric push rod 21 is turned on to lower the nozzle head 2 22, the laser rangefinder 23 detects the proximity to the reflective plate 13. The processor 7 will quickly process the data transmitted by the laser rangefinder 23 and convert it into an electrical signal that can be received by the exhaust pump 15, prompting the exhaust pump 15 to gradually increase its power until it reaches the maximum power, thereby achieving rapid cooling of the silicon wafer. During this process, the cooling gas ejected from the nozzle head 12 and the nozzle head 2 22 will clamp the silicon wafer and will not touch the silicon wafer, ensuring that the silicon wafer is not contaminated or damaged during the cooling process;

[0064] When the silicon wafer has finished cooling, the controller 6 closes the ball valve in the connecting pipe 3 24 and turns on the vacuum pump 25. The vacuum suction pipe 26 extracts air from the air jet head 22, creating a negative pressure inside the air jet head 22. The silicon wafer above the air jet head 12 is adsorbed on the bottom surface of the air jet head 22. After that, the driving motor 1 27 drives the threaded rod 1 29 in the movable groove 28 on the top surface of the workbench 2 to rotate, so that the movable block 30 threadedly connected to the threaded rod 1 29 moves, thereby driving the movable plate 10 to move. The driving motor 2 35 drives the threaded rod 2 33 in the slide groove 32 on the top surface of the bracket 4 to rotate, so that the slider 34 moves, thereby driving the driving plate 18 to move.

[0065] When the moving assembly reaches the rightmost side, the driving assembly has not yet reached the rightmost side. At this time, the driving assembly continues to move, and the mechanical arm 11 on the moving assembly is started, so that the nozzle head 12 is always directly below the nozzle head 22, and the silicon wafer below the nozzle head 22 is sprayed with cooling gas to prevent the silicon wafer from falling during the movement. When the driving assembly moves to the rightmost side, the silicon wafer is directly above the graphite placement seat 2 37. At this time, the nozzle head 12 stops working, and the mechanical arm 11 is started to withdraw the nozzle head 12 from under the nozzle head 22. Then, start the electric push rod 21 to place the silicon wafer in the internal groove of the graphite placement seat 2 37, then stop the vacuum pump 25, and then the electric push rod 21 drives the nozzle head 22 to rise, and the moving assembly and the driving assembly are moved to the leftmost starting position, and the cooled silicon wafer is transported to the next step by the manipulator and the above operation is repeated to cool the silicon wafer. During the entire cooling process, each component works in an orderly manner under the coordinated control of the controller 6 and the processor 7 to ensure the efficiency and stability of the silicon wafer cooling and transfer process, and to ensure that the quality of the silicon wafer is not damaged.

[0066] The above description is only a preferred specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any technician familiar with the technical field, within the technical scope disclosed by the present invention, who makes equivalent replacements or changes based on the technical solution and inventive concept of the present invention, should be covered by the scope of protection of the present invention.

Claims

1. A device for continuous reaction cooling of silicon wafers after chemical vapor deposition, characterized in that: include: A base (1), a workbench (2) is fixedly mounted on the top surface of the base (1), a connecting plate (3) and a processor (7) are fixedly mounted on the side wall of the base (1), two brackets (4) are provided on the top surface of the base (1), a fixing plate (36) is fixedly mounted on the right side wall of the bracket (4), a second graphite placement seat (37) is fixedly mounted at the center of the top surface of the fixing plate (36), a distribution box (5) is fixedly mounted on the front side wall of the workbench (2), a controller (6) is provided on one side of the distribution box (5), a mechanical gripper (8) is fixedly mounted on the top surface of the connecting plate (3), the end of the mechanical gripper (8) clamps the first graphite placement seat (9) and a groove for placing a high-temperature silicon wafer is provided on the graphite placement seat; A movable plate (10) is mounted on the workbench (2) through a movable assembly, a mechanical arm (11) is fixedly mounted on the top surface of the movable plate (10), a nozzle head (12) is fixedly mounted on the output end of the mechanical arm (11), a reflector (13) is fixedly mounted on the side wall of the nozzle head (12), a storage box (14) and an exhaust pump (15) are fixedly mounted on the rear side wall of the workbench (2), a connecting pipe (16) is provided between the storage box (14) and the exhaust pump (15), a connecting pipe (17) is provided between the exhaust pump (15) and the nozzle head (12), and a bracket (4) is provided with a driving plate (18) through a driving assembly, a circular groove (19) is provided on the top surface of the driving plate (18), a concave plate (20) is fixedly provided on the top surface of the driving plate (18), an electric push rod (21) is fixedly provided on the bottom surface of the concave plate (20), an air jet head 2 (22) is fixedly provided on the output shaft of the electric push rod (21), a laser rangefinder (23) is fixedly provided on the bottom surface of the air jet head 2 (22), a connecting pipe 3 (24) connected to the connecting pipe 2 (17) is provided on one side of the air jet head 2 (22), and a ball valve is provided in the connecting pipe 3 (24).

2. The device for continuous reaction cooling of silicon wafers after chemical vapor deposition according to claim 1, characterized in that: Mobile components include: A driving motor (27) is fixedly mounted on the right side wall of the workbench (2). A movable groove (28) is provided on the top surface of the workbench (2). The inner wall of the movable groove (28) is rotatably connected to a threaded rod (29). The outer surface of the threaded rod (29) is threadedly connected to a movable block (30). The movable block (30) moves in the movable groove (28) and its top surface is connected to the bottom surface of the movable plate (10). The output shaft of the driving motor (27) is connected to the right side wall of the threaded rod (29).

3. The device for continuous reaction cooling of silicon wafers after chemical vapor deposition according to claim 1, characterized in that: The drive components include: Two limit plates (31) are fixedly mounted on the right side walls of the two brackets (4), and a slide groove (32) is provided on the top surface of each bracket (4). The inner wall of one of the slide grooves (32) is rotatably connected to a second threaded rod (33), and the outer surface of the second threaded rod (33) is threadedly connected to a slider (34). The slider (34) moves in the slide groove (32) and the top surface is connected to the bottom surface of the drive plate (18). A second drive motor (35) is fixedly mounted on the right side wall of one of the limit plates (31), and the output shaft of the second drive motor (35) is connected to the right side wall of the second threaded rod (33).

4. A method for continuously cooling silicon wafers after chemical vapor deposition (CVD) equipment, applied to the device for continuously cooling silicon wafers after CVD as claimed in any one of claims 1 to 3, characterized in that: The following steps are involved: S1. Preliminary preparation step of the equipment: providing a cooling device as described in claims 1-3.

5. The method for continuous reaction cooling of silicon wafers in a chemical vapor deposition device according to claim 4, characterized in that: S2. The operation of cooling the silicon wafer is as follows: S21. When cooling is required, the controller (6) adjusts the robotic arm (11) so that the nozzle head (12) is directly above the graphite placement seat (9); S22. Before turning on the exhaust pump (15), the gas flow rate and pressure of the nozzle head 1 (12) are first precisely adjusted through the controller (6) to ensure that the ejected airflow can form a stable supporting force. When the exhaust pump (15) is turned on, the cooling gas is ejected from the nozzle head 1 (12) at a certain speed and pressure to form an airflow field. At this time, the mechanical arm (11) cooperates with the mechanical gripper (8) to rotate the graphite placement seat 1 (9) and the silicon wafer thereon by 180° so that the silicon wafer faces downward. During the rotation process, due to the impact and support of the airflow ejected from the nozzle head 1 (12) on the silicon wafer, the silicon wafer is stably pressed inside the groove of the graphite placement seat 1 (9) to prevent it from falling off. Next, the mechanical gripper (8) slowly moves upward while keeping the airflow ejected from the nozzle head 1 (12) stable. As the graphite placement seat 1 (9) gradually rises, the silicon wafer begins to float above the nozzle 1 (12) under the support force of the airflow. In order to achieve stable suspension, the controller (6) monitors the position of the silicon wafer and the airflow intensity ejected by the nozzle 1 (12) in real time, and makes fine adjustments as needed. By precisely controlling the size and direction of the airflow, it can ensure that the silicon wafer remains relatively stable in the suspended state and avoids excessive displacement or shaking. When the silicon wafer is in the suspended state, the nozzle 1 (12) continues to eject cooling gas to cool one side of the silicon wafer. Since the support force formed by the airflow matches the gravity of the silicon wafer, the silicon wafer can maintain a stable suspension state, thereby avoiding damage that may be caused by the robot directly clamping the high-temperature silicon wafer. At the same time, the flow of cooling gas also helps to accelerate the cooling process of the silicon wafer.

6. The method for continuous reaction cooling of silicon wafers in a chemical vapor deposition device according to claim 5, characterized in that: S3. The steps for cooling the other side of the silicon wafer are as follows: S31. When the laser light emitted by the laser rangefinder (23) is at the center of the reflector (13), the ball valve in the connecting pipe (24) is opened to allow cooling gas to be injected into the nozzle (22) to cool the other side of the silicon wafer; S32, by turning on the electric push rod (21) to lower the nozzle head 2 (22), when the laser rangefinder (23) detects that it is close to the reflector (13), the processor (7) processes the data and converts it into an electrical signal for the exhaust pump (15), so that the power of the exhaust pump (15) is increased to the maximum power to achieve rapid cooling, and the cooling gas ejected by the nozzle head 1 (12) and the nozzle head 2 (22) will clamp the silicon wafer without contacting the silicon wafer.

7. The method for continuous reaction cooling of silicon wafers in a chemical vapor deposition device according to claim 6, wherein: S4. While nozzle head 1 (12) and nozzle head 2 (22) are cooling and clamping the silicon wafer, the gases released by nozzle head 1 (12) and nozzle head 2 (22) are precisely controlled in pressure and flow to ensure that the two gases form a stable and uniform convection on the surface of the silicon wafer. When the silicon wafer is cooled, the ball valve in connecting pipe 3 (24) is closed and the vacuum pump (25) is turned on. The vacuum suction pipe (26) extracts the air in nozzle head 2 (22) so that the silicon wafer is adsorbed on the bottom surface of nozzle head 2 (22). Then the moving component and the driving component move synchronously.

8. The method for continuous reaction cooling of silicon wafers in a chemical vapor deposition device according to claim 7, wherein: S5. After cooling, the silicon wafer transfer steps are as follows: S51, when the moving assembly reaches the rightmost side, the driving assembly has not yet reached the rightmost side. At this time, the driving assembly continues to move, and the mechanical arm (11) on the moving assembly is started, so that the nozzle head 1 (12) is always directly below the nozzle head 2 (22), and the cooling gas is sprayed on the silicon wafer below the nozzle head 2 (22) to prevent the silicon wafer from falling during the movement. When the driving assembly moves to the rightmost side, the silicon wafer is directly above the graphite placement seat 2 (37). At this time, the nozzle head 1 (12) stops working, and the mechanical arm (11) is started to withdraw the nozzle head 1 (12) from under the nozzle head 2 (22). After that, the electric push rod (21) is started to place the silicon wafer in the inner groove of the graphite placement seat 2 (37), and then the vacuum pump (25) stops working; S52, the electric push rod (21) then drives the second jet head (22) to rise, and the moving assembly and the driving assembly both move to the leftmost starting position; S53: The cooled silicon wafer is transported to the next step by a robot and the above operation is repeated to cool the silicon wafer.

9. The method for continuous reaction cooling of silicon wafers in a chemical vapor deposition device according to claim 8, wherein: During the entire cooling process, all components work in an orderly manner under the coordinated control of the controller (6) and the processor (7), ensuring the efficiency and stability of the silicon wafer cooling and transfer process, and ensuring that the quality of the silicon wafer is not damaged.

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