Thin film deposition apparatus and thin film deposition method

Abstract

The invention provides a thin film deposition device which comprises a radio frequency power supply used for providing radio frequency power and generating an electric field in a processing cavity; the heating unit comprises a heating tray for heating the substrate and a rotating shaft for supporting the heating tray; the supporting unit comprises a supporting ring arranged around the heating tray and a supporting seat for supporting the supporting ring; the power transmission unit is fixedly connected with the rotating shaft; the bearing part comprises a second bearing part and a third bearing part, the power transmission unit is installed on the third bearing part and penetrates through the second bearing part to be fixedly connected with the rotating shaft, and the supporting base is arranged on the rotating shaft in a sleeving mode and is fixedly connected to the second bearing part so that when the third bearing part ascends and descends relative to the second bearing part, the power transmission unit can rotate around the rotating shaft. The power transmission unit and the heating unit do lifting motion relative to the supporting unit, and the problem that in the prior art, the uniformity of a thin film deposited on a substrate is poor is solved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor technology, and relates to a thin film deposition apparatus and a thin film deposition method. Background Art

[0002] PECVD (plasma enhanced chemical vapor deposition) equipment is used to deposit various dielectric thin films on the surface of a substrate. The thickness uniformity of the thin film is one of the key parameters of the thin film deposition process, which directly affects the thin film characteristics and yield. However, the thickness uniformity of the thin film is affected by many adverse factors. In particular, the uneven heating of the substrate is one of the important adverse factors affecting the thickness uniformity of the thin film on the substrate.

[0003] During the thin film deposition process, the substrate to be deposited with the thin film is placed on a heating tray, and the heating tray heats the substrate. However, due to the uneven temperature of the heating tray, the substrate is unevenly heated, and the thickness of the thin film deposited on the substrate surface is also uneven. Therefore, it is necessary to provide a thin film deposition apparatus and a thin film deposition method that can make the thickness of the thin film uniform. Summary of the Invention

[0004] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a thin film deposition apparatus and a thin film deposition method for solving the problem of poor uniformity of the thin film deposited on the substrate in the prior art.

[0005] To achieve the above and other related objectives, the present application provides a thin film deposition device, including: a radio frequency power supply for providing radio frequency power to generate an electric field in a processing chamber; a heating unit including a heating tray for heating a substrate and a rotating shaft for supporting the heating tray; a supporting unit including a supporting ring disposed around the heating tray and a supporting seat for supporting the supporting ring; a power transmission unit fixedly connected to the rotating shaft; a carrying part including a second carrying part and a third carrying part, the power transmission unit is installed on the third carrying part and fixedly connected to the rotating shaft through the second carrying part, the supporting seat is sleeved on the rotating shaft and fixedly connected to the second carrying part so that when the third carrying part moves up and down relative to the second carrying part, the power transmission unit and the heating unit move up and down relative to the supporting unit; a power source including a first power source capable of driving the second carrying part and the third carrying part to move up and down synchronously and a second power source capable of driving the third carrying part to move up and down relative to the second carrying part. When the first power source drives the second carrying part to lift the supporting unit, the third carrying part is used to lift the power transmission unit and the heating unit synchronously; when the second power source drives the third carrying part to lift the power transmission unit and the heating unit synchronously, the second carrying part and the supporting unit are stationary.

[0006] Optionally, when the first power source drives the second carrying part and the third carrying part to rise synchronously, the third carrying part drives the heating unit to rise until the heating tray supports the substrate, or rises until the supporting ring and the heating tray jointly support the substrate. Optionally, when the second power source drives the third carrying part to rise, the third carrying part drives the heating unit to rise until the substrate is separated from the supporting ring.

[0007] Optionally, the supporting unit further includes a plurality of support rods located between the supporting ring and the supporting seat, and the support rods are not fixedly connected to the supporting ring.

[0008] Optionally, when the second power source drives the third carrying part to rise, the third carrying part drives the power transmission unit and the heating unit to rise until the support rods are separated from the supporting ring.

[0009] Optionally, it further includes a magnetic fluid installed on the third carrying part, the magnetic fluid includes an inner ring fixedly connected to the power transmission unit, and the inner ring is used to drive the heating unit to rotate through the power transmission unit.

[0010] Optionally, when the heating unit rotates in a first direction, the supporting ring, the heating tray and the substrate remain in a non-contact state, and the heating unit drives the substrate to rotate synchronously.

[0011] Optionally, when the heating unit rotates in the first direction, the heating unit drives the support ring to rotate synchronously with the substrate.

[0012] Optionally, when the heating unit rotates in the second direction, the support ring supports the substrate, and the substrate is kept in a non-contact state with the heating unit, where the second direction is the opposite direction of the first direction.

[0013] Optionally, it further includes a connection unit, which is connected to the heating unit and is used to eliminate the electric field change caused by the rotation and reset of the heating unit.

[0014] Optionally, the connection unit includes an elastic member and a radio frequency cable connected to the heating unit. When the heating unit rotates and resets, the elastic member drives the radio frequency cable to reset.

[0015] Optionally, the radio frequency cable passes through the power transmission unit and extends along the bending direction of the elastic member.

[0016] Optionally, the connection unit includes a slip ring and a radio frequency cable. The heating unit and the radio frequency cable are connected through the slip ring. When the heating unit rotates and resets, the radio frequency cable remains stationary.

[0017] To achieve the above object and other related objects, the present application further provides a thin film deposition method, including the following steps:

[0018] The thin film deposition method is characterized by including the following steps:

[0019] S1: Place the substrate in the processing chamber, and drive the heating tray to carry the substrate up to the process position;

[0020] S2: Perform a thin film deposition on the surface of the substrate;

[0021] S3: The inner circle of the magneto-fluid drives the heating unit to synchronously rotate a certain angle from the initial position through the power transmission unit;

[0022] S4: The second power source drives the third bearing part to carry the heating unit down to separate from the substrate, and the support ring supports the substrate;

[0023] S5: The power transmission unit drives the heating unit to rotate in the reverse direction to the initial position;

[0024] S6: The second power source drives the third bearing part to carry the heating unit to rise synchronously, and the heating unit drives the substrate to rise to the process position;

[0025] S7: Repeat step S2 - step S6 until n times of thin film depositions are completed.

[0026] Optionally, in step S3, one end of the elastic member is fixedly connected to the heating unit. When the heating unit rotates, one end of the elastic member is stretched, causing the elastic member and the RF cable to deform. In step S5, when the heating unit rotates and resets, the elastic member drives the RF cable to rebound to its original shape.

[0027] Optionally, in step S3, the heating unit is fixedly connected to the slip ring so that the two can rotate synchronously along the first direction. In step S5, the power transmission unit drives the rotor of the slip ring to rotate along the second direction, and the first direction is opposite to the second direction.

[0028] Optionally, in step S1, the step of driving the heating unit to lift the substrate to the process position includes: the first power source drives the second carrier part and the third carrier part to lift synchronously. The second carrier part drives the support ring to lift, and the third carrier part drives the heating tray to lift synchronously until the heating tray contacts the substrate, or until the heating tray and the support ring jointly contact the substrate; the second power source drives the third carrier part to continue to lift the heating tray and the substrate to the process position.

[0029] As described above, according to the thin film deposition apparatus and the thin film deposition method of the present invention, the heating unit rotates with the substrate, ensuring the uniformity of the thin film deposited on the substrate by the plasma gas generated by the electric field dissociation of the process gas under the action of the RF power supply. Moreover, the heating unit is connected to the connection unit, so that after the heating unit rotates and resets, the electric field remains unchanged. Description of the Drawings

[0030] Figure 1 It is a schematic structural diagram of the thin film deposition apparatus in the present invention.

[0031] Figure 2 It is a cross-sectional view of the thin film deposition apparatus in the present invention, where the substrate is placed at the end of the support pin.

[0032] Figure 3 It is a cross-sectional view of another embodiment of the thin film deposition apparatus in the present invention.

[0033] Figure 4A 、 Figure 4B They are respectively schematic diagrams of different embodiments of the thin film deposition apparatus, where the substrate is located at the process position.

[0034] Figure 5 It is a circuit diagram of the RF power supply of the thin film deposition apparatus in the present invention for providing RF power to dissociate the process gas. Detailed Embodiments

[0035] The following describes the embodiments of the present invention through specific examples. Those skilled in the art can easily understand the other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0036] When detailing the embodiments of the present invention, for ease of explanation, the cross-sectional views showing the device structure will be enlarged locally out of the general scale, and the schematic diagrams are only examples and should not limit the scope of protection of the present invention here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0037] For convenience of description, spatial relationship terms such as "under", "below", "lower than", "beneath", "above", "on" etc. may be used herein to describe the relationship between one element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to cover other directions of the device in use or operation in addition to the directions depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or there can also be one or more intervening layers. As used herein, "between... and..." means including the endpoint values.

[0038] In the context of the present application, the structure in which the first feature is "above" the second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0039] It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Therefore, only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and ratio of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0040] As Figures 1 to 4B shown, this embodiment provides a thin film deposition device, including a heating unit 100, a support unit 200, a power transmission unit 300, a magnetohydrodynamic fluid 400, a motor 500, a substrate support unit 600, a connection unit 700, a power source 800, and a carrying part 900. Among them, the motor 500 is used to drive the heating unit 100 to rotate, and the power source 800 is used to drive the heating unit 100 or the heating unit 100 and the support unit 200 to lift and lower together.

[0041] As Figure 2As shown, the heating unit 100 includes a heating tray 110 and a rotating shaft 120 for supporting the heating tray 110. The rotating shaft 120 extends downward from the heating tray 110 and stably supports the heating tray 110.

[0042] Combined with Figure 1 and Figure 2 As shown, the support unit 200 includes a support ring 210 disposed around the heating tray 110, a support base 230 for supporting the support ring 210, and a plurality of support rods 220 located between the support ring 210 and the support base 230. The support base 230 is movably sleeved on the rotating shaft 120. In the thin film deposition process, the rotating shaft 120 can move up and down relative to the support base 230. Combined with Figure 4A or Figure 4B , the inner diameter of the support ring 210 is smaller than the outer diameter of the substrate W. Thus, when the support ring 210 contacts the substrate W, it supports the substrate W. The heating tray 110 includes a convex portion 111 protruding upward from its upper surface and an edge portion 112 disposed around the convex portion 111. The diameter of the convex portion 111 is smaller than the diameter of the substrate W.

[0043] As Figure 4A shown in connection with Figure 4B , the support ring 210 includes a first step portion 211, a second step portion 212, and a slope 213 connecting the first step portion 211 and the second step portion 212. When the support ring 210 supports the substrate W, the slope 213 can play a guiding role. The height of the second step portion 212 is higher than that of the first step portion 211, and the first step portion 211 is located between the heating tray 110 and the substrate W. In one embodiment, as Figure 4A shown, the height difference between the convex portion 111 and the edge portion 112 of the heating tray 110 is greater than the thickness of the first step portion 211 of the support ring 210. Specifically, the height difference is 1.5 - 2.9 mm, and the thickness of the first step portion 211 of the support ring 210 is 0.3 - 0.7 mm. The support ring 210 is fixedly connected to the support rods 220, and the support rods 220 can drive the support ring 210 to rise. In the thin film deposition process state, the support rods 220 drive the support ring 210 to rise, and the heating tray 110 also rises simultaneously until the support rods 220 stop rising when the heating tray 110 or the support ring 210 and the heating tray 110 jointly support the substrate W. Then the heating tray 110 continues to rise to the process position. As Figure 4A shown, at this time, the upper and lower surfaces of the first step portion 211 of the support ring 210 are not in contact with the substrate W and the heating unit 100.

[0044] In another embodiment, as Figure 4BAs shown, the height difference between the convex portion 111 and the edge portion 112 of the heating tray 110 is the same as the thickness of the first stepped portion 211, and the upper surface of the convex portion 111 is flush with the upper surface of the first stepped portion 211 to prevent the substrate W from shaking when jointly supporting the substrate W. Specifically, the height difference between the convex portion 111 and the edge portion 112 is 0.3 - 0.7 mm. The support ring 210 and the support rod 220 are not fixedly connected. During the film deposition process, the support ring 210 and the support rod 220 are separated, and the support ring 210 is supported by the edge portion 112 of the heating tray 110. At this time, the upper surface of the first stepped portion 211 of the support ring 210 is in contact with the substrate W, and a part of the lower surface of the support ring 210 is in contact with the heating tray 110, which can better conduct heat to the substrate W and prevent the edge temperature of the substrate W from being insufficient.

[0045] As Figure 2 As shown, the substrate support unit 600 includes a support pin 610 for supporting the substrate W and a support base 620 fixedly connected to the support pin 610. The support base 620 is movably sleeved outside the support seat 230. When the support seat 230 moves up and down, the position of the support base 620 remains unchanged. The support pin 610 penetrates through the heating tray 110 and the end of the support pin 610 supports the substrate W.

[0046] As Figure 2 As shown, the power transmission unit 300 is connected between the rotating shaft 120 and the magnetorheological fluid 400. When the magnetorheological fluid 400 rotates, the power transmission unit 300 can drive the rotating shaft 120 to rotate. Specifically, the magnetorheological fluid 400 includes an inner ring 420 and an outer ring 410. The inner ring 420 can rotate relative to the outer ring 410. The inner ring 420 is connected between the power transmission unit 300 and the motor 500. When the motor 500 drives the inner ring 420 to rotate, the inner ring 420 drives the rotating shaft 120 to rotate through the power transmission unit 300. Among them, the motor 500 is located between the inner ring 420 and the outer ring 410 and is located inside the magnetorheological fluid 400.

[0047] As Figure 5 As shown, the RF power supply D provides RF power to form an RF electric field between the upper electrode shower head S and the lower electrode heating unit 200, exciting the process gas supplied by the upper electrode shower head S to dissociate into plasma gas, and the dissociated plasma gas performs film deposition on the substrate W. As Figure 5 As shown, in one embodiment, the RF power supply D is connected to the upper electrode shower head S, and the lower electrode heating unit 200 is grounded through an RF cable. In another embodiment, the RF power supply D and the lower electrode heating unit 200 are connected through an RF cable, and the upper electrode shower head S is grounded (not shown). In addition, the tuning capacitor C cancels the inductance formed by the RF cable by adjusting the capacitance value, so that the impedance value in the circuit remains unchanged and the electric field is ensured to be unchanged.

[0048] Referring toFigure 2 , the heating unit 100 is connected to the connection unit 700, and the connection unit 700 is used to eliminate the electric field change caused by the rotational reset of the heating unit 100. In one embodiment, the connection unit 700 includes a holder 710, a radio frequency cable 720, and an elastic member 730. The elastic member 730 can be a spring or a drag chain. The power transmission unit 300 is fixedly connected to the holder 710. One end of the elastic member 730 is fixedly connected to the holder 710, and the other end is fixedly connected to the matcher 520. Therefore, when the heating unit 200 rotates or reverses in one direction with the power transmission unit 300 and the holder 710, one end of the elastic member 730 stretches or rebounds following the power transmission unit 300. One end of the radio frequency cable 720 electrically connected to the heating unit 200 passes through a through hole (not labeled) of the power transmission unit 300 and then passes through the holder 710 and the elastic member 730 in sequence and is fixed to the holder 710 and the elastic member 730 at multiple positions, and then grounded or connected to the radio frequency power supply D. The radio frequency cable 720 is fixed to the holder 710 and the elastic member 730 at multiple positions by ropes or cable ties respectively. The radio frequency cable 720 extends along the bending direction of the elastic member 730. When the elastic member 730 stretches or rebounds, the radio frequency cable 720 can move synchronously therewith. In the thin film deposition process, the heating unit 100 rotates and resets, that is, rotates a set angle from the initial position and then rotates in the reverse direction to the initial position. The radio frequency cable 720 will also move synchronously with the heating unit 100. However, since the radio frequency cable 720 is flexible, after the heating unit 100 returns to the initial position, the radio frequency cable 720 will not return to the initial shape, resulting in inductance and electric field changes, and the capacitance value cannot be adjusted in real time according to the inductance change. Therefore, in this embodiment, the radio frequency cable 720 is fixed to the elastic member 730. When the heating unit 100 rotates and resets, the radio frequency cable 720 resets under the elastic rebound of the elastic member 730, that is, returns to the initial shape, so as to ensure that the inductance in the circuit remains unchanged. Specifically, the set angle of rotation of the power transmission unit 300 can be 60 degrees. Under the action of the power transmission unit 300 driving the heating unit 300 to rotate in one direction 6 times, the heating unit 100 can drive the substrate W to rotate a complete circle. Other angles divisible by 360 can also be selected, so as to ensure that the substrate W can be driven to rotate a complete circle after rotating several times. The matcher 520 is installed below the fourth bearing portion 940. The holder 710 passes through the fourth bearing portion 940 and is fixedly connected to one end of the elastic member 730. Here, when the power transmission unit 300 drives the heating unit 100 and the holder 710 to rotate synchronously, the elastic member 730 stretches and rebounds below the fourth bearing portion 940.

[0049] In another embodiment, in combination with Figure 3 and Figure 5, the connection unit 700 includes a slip ring 740 and a radio frequency cable 720. One end of the connection unit 700 is inserted into the power transmission unit 300 and electrically connected to the heating unit 200, and the other end is electrically connected to the tuning capacitor C in the matcher 520 or electrically connected to the radio frequency power supply D through the radio frequency cable 720. When the power transmission unit 300 drives the heating unit 100 and the connection unit 700 to rotate, the radio frequency cable 720 remains stationary, which will not cause the inductance to change and the impedance value remains unchanged. Then, the electric field between the upper electrode shower head S and the lower electrode heating unit 100 also remains unchanged. The bottom of the connection unit 700 is fixedly connected to the fourth bearing part 940, and the radio frequency cable 720 penetrates through the fourth bearing part 940 and is grounded or connected to the radio frequency power supply D.

[0050] As Figure 1 And Figure 2As shown, the bearing part 900 includes a first bearing part 910, a second bearing part 920, a third bearing part 930, and a fourth bearing part 940 that are distributed from high to low in the vertical direction. The power source 800 includes a first power source 810 and a second power source 820. The first power source 810 is connected between the first bearing part 910 and the second bearing part 920 so that the first bearing part 910 and the second bearing part 920 can move relative to each other in the vertical direction. The second power source 820 is connected between the second bearing part 920 and the third bearing part 930 so that the second bearing part 920 and the third bearing part 930 can move relative to each other in the vertical direction. Both the first power source 810 and the second power source 820 can be electric cylinders. For example, when the first power part 810 extends, it drives the second bearing part 920 to move downward. When the first power part 810 contracts, it drives the second bearing part 920 to move upward. Among them, the first power source 810 and the second power source 820 are 2 or 3, and are evenly arranged between adjacent bearing parts. Preferably, the first power source 810 and the second power source 820 are selected to be 3, so that the forces on adjacent bearing parts are evenly distributed. The power transmission unit 300 sequentially penetrates the third bearing part 930 and the second bearing part 920 from bottom to top, and is fixedly connected to the rotating shaft 120 that penetrates the first bearing part 910 from top to bottom. The power transmission unit 300 is fixedly connected to the magnetorheological fluid 400, and the magnetorheological fluid 400 is fixedly connected to the third bearing part 930. Therefore, when the second bearing part 920 and the third bearing part 930 move relative to each other, the power transmission unit 300 drives the rotating shaft 120 of the heating unit 100 to move up and down, so that the heating tray 110 of the heating unit 100 can move up and down. Here, since the support base 230 is sleeved on the rotating shaft 120 and penetrates the first bearing part 910, the bottom of the support base 230 is fixedly connected to the second bearing part 920 through a flange (not marked). Thus, when the second bearing part 920 and the third bearing part 930 move relative to each other, the power transmission unit 300 drives the heating unit 100 to move up and down, and the support base 230 and the support rod 220 remain stationary. When the second bearing part 920 and the first bearing part 910 move relative to each other, the support base 230 drives the support ring 210 and the support rod 220 to move up and down. At this time, since the second power source 820 is connected between the second bearing part 920 and the third bearing part 930 and the second power source 820 has become a rigid connection, the second bearing part 920 drives the third bearing part 930 to move up and down synchronously, the third bearing part 930 drives the power transmission unit 300 to move up and down synchronously, and the heating tray 110 also moves up and down synchronously. Both ends of the magnetorheological fluid 400 are installed on the third bearing part 930 and the fourth bearing part 940, and the other end of the elastic member 730 is fixedly connected to the fourth bearing part 940. Therefore, the other end of the elastic member 730 is indirectly fixedly connected to the third bearing part 930.

[0051] The thin film deposition method using the above thin film deposition apparatus in the present invention includes the following steps:

[0052] S1: Place the substrate W in the processing chamber, and drive the heating tray to lift the substrate to the process position.

[0053] In some embodiments, step S1 specifically includes the following steps S11 - S13:

[0054] S11: Place the substrate W in the processing chamber, and place the substrate W at the end of the support pin 610 of the support unit 600 in the processing chamber.

[0055] S12: Drive the heating tray 110 and the support ring 210 to rise simultaneously until the heating tray 11 or the heating tray 11 and the support ring 210 come into contact with the substrate W.

[0056] In step S12, the first power source 810 can drive the second bearing part 920 and the third bearing part 930 to rise synchronously. Then, the support seat 230 fixedly connected to the second bearing part 920 drives the support rod 220 and the support ring 210 to rise synchronously, and the power transmission unit 300 fixedly connected to the third bearing part 930 drives the heating unit 200 to rise synchronously until the heating tray 110 comes into contact with the substrate W, or rises until the heating tray 110 and the support ring 210 come into contact with the substrate W together.

[0057] S13: The heating tray 110 drives the substrate W or the substrate W and the support ring 210 to continue rising to the process position.

[0058] In step S13, in one embodiment, the support rod 220 is fixedly connected to the support ring 210, and the second power source 820 drives the third bearing part 930 to rise. Then, the power transmission unit 300 fixedly connected to the third bearing part 930 drives the heating unit 200 and the substrate W to continue rising to the process position, and the support ring 210 remains stationary. In another embodiment, the support rod 220 is not fixedly connected to the support ring 210. When the second power source 820 drives the third bearing part 930 to rise, the heating unit 200 drives the support ring 210 and the substrate W to rise synchronously to the process position. In addition, in steps S2 and S3, the movement mode of the substrate to the process position can be replaced by the support unit 600 driving the substrate W to descend until the support pin 600 retracts into the heating tray 110, and the substrate W is placed on the heating tray 110 or the heating tray 110 and the support ring 210.

[0059] S2: Perform a thin film deposition on the surface of the substrate.

[0060] S3: The inner circle 420 of the magneto - fluid drives the heating unit 100 to rotate a certain angle synchronously from the initial position through the power transmission unit 300.

[0061] In step S3, the motor 500 drives the inner ring 420 to rotate. The inner ring 420 drives the heating unit 100 to rotate synchronously through the power transmission unit 300. The heating unit 100 drives the substrate W or the substrate W and the support ring 210 to rotate from the initial position. In one embodiment, the support rod 220 is fixedly connected to the support ring 210, the heating unit 100 drives the substrate W to rotate, and the support ring 210 remains stationary. In another embodiment, the support rod 220 is not fixedly connected to the support ring 210, and the heating unit 100 drives the substrate W and the support ring 210 to rotate synchronously. In addition, the heating unit 100 drives the connection unit 700 to move simultaneously. In one embodiment, the heating unit 100 stretches one end of the elastic member 730, causing the shape of the elastic member 730 to change; in another embodiment, the heating unit 100 drives the rotor of the slip ring 740 to rotate.

[0062] S4: The second power source 820 drives the third carrier 930 to lower the heating unit 100 until it separates from the substrate W, and the support ring 210 supports the substrate W;

[0063] In step S4, the second power source 820 drives the third carrier 930 to lower, and then the heating unit 100 descends synchronously. In one embodiment, after the heating unit 100 drives the substrate W to descend until the substrate W contacts the support ring 210, the support ring 210 supports the substrate W, and the heating unit 100 continues to descend until it separates from the substrate W; in another embodiment, the heating unit 100 drives the substrate W and the support ring 210 to descend together until the support ring 210 contacts the support rod 220. Then, the support ring 210 is supported by the support rod 220, the support ring 210 supports the substrate W, and the support ring 210 and the substrate W stop descending together. At this time, the heating unit 100 continues to descend until it separates from the substrate W.

[0064] S5: The power transmission unit 300 drives the heating unit 100 to rotate in the reverse direction to the initial position;

[0065] The motor 500 drives the power transmission unit 300 and the heating unit 100 to rotate in the reverse direction to the initial position. In one embodiment, the power transmission unit 300 drives the elastic member 730 to rotate back, and the elastic member 730 rebounds to its initial shape; in another embodiment, the power transmission unit 300 drives the rotor of the slip ring 740 to rotate.

[0066] S6: The second power source 820 drives the third carrier 930 to raise the heating unit 100 synchronously, and the heating unit 100 drives the substrate W to rise to the process position;

[0067] In step S6, the second power source 820 drives the third carrier part 930 to rise, and then the heating unit 100 rises synchronously. In one embodiment, the heating unit 100 drives the substrate W to rise until the substrate W is separated from the support ring 210 and reaches the process position; in another embodiment, the heating unit 100 drives the substrate W and the support ring 210 to rise synchronously, and the support ring 210 is separated from the support rod 220 and reaches the process position;

[0068] S7: Repeat S2 - S6 until n times of film deposition are completed.

[0069] According to the film deposition device and the film deposition method in the present invention, the RF power supply D provides RF power to form an electric field between the upper electrode shower head S and the lower electrode heating unit 200, so that the electric field remains unchanged after the heating unit 200 rotates and resets.

[0070] The above embodiments are only illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A thin film deposition device, characterized in that, Comprising: A radio frequency power supply for providing radio frequency power to generate an electric field in a processing chamber; A heating unit including a heating tray for heating a substrate and a rotating shaft supporting the heating tray; A support unit including a support ring disposed around the heating tray and a support base supporting the support ring; A power transmission unit fixedly connected to the rotating shaft; A carrying part including a second carrying part and a third carrying part. The power transmission unit is installed on the third carrying part and fixedly connected to the rotating shaft through the second carrying part. The support base is sleeved on the rotating shaft and fixedly connected to the second carrying part so that when the third carrying part moves up and down relative to the second carrying part, the power transmission unit and the heating unit move up and down relative to the support unit; A power source including a first power source capable of driving the second carrying part and the third carrying part to move up and down synchronously and a second power source capable of driving the third carrying part to move up and down relative to the second carrying part, When the first power source drives the second carrying part to drive the support unit to move up and down, the third carrying part is used to drive the power transmission unit and the heating unit to move up and down synchronously; when the second power source drives the third carrying part to drive the power transmission unit and the heating unit to move up and down synchronously, the second carrying part and the support unit are stationary.

2. The thin film deposition device according to claim 1, characterized in that, When the first power source drives the second carrying part and the third carrying part to move up synchronously, the third carrying part drives the heating unit to move up to the heating tray to support the substrate, or move up to the support ring and the heating tray to jointly support the substrate.

3. The thin film deposition device according to claim 1, characterized in that, When the second power source drives the third carrying part to move up, the third carrying part drives the heating unit to move up until the substrate is separated from the support ring.

4. The thin film deposition device according to claim 1, characterized in that, The support unit further includes a plurality of support rods located between the support ring and the support base, and the support rods are not fixedly connected to the support ring.

5. The thin film deposition device according to claim 4, characterized in that, When the second power source drives the third carrying part to move up, the third carrying part drives the power transmission unit and the heating unit to move up until the support rods are separated from the support ring.

6. The thin film deposition device according to claim 1, characterized in that, It further includes a magneto-fluid installed on the third carrying part. The magneto-fluid includes an inner ring fixedly connected to the power transmission unit, and the inner ring is used to drive the heating unit to rotate through the power transmission unit.

7. The thin film deposition device according to claim 6, characterized in that, When the heating unit rotates in a first direction, the support ring, the heating tray and the substrate are kept in a non-contact state, and the heating unit drives the substrate to rotate synchronously.

8. The thin film deposition device according to claim 6, characterized in that, When the heating unit rotates in a first direction, the heating unit drives the support ring and the substrate to rotate synchronously.

9. The thin film deposition device according to claim 7 or 8, characterized in that, When the heating unit rotates in a second direction, the support ring supports the substrate, and the substrate and the heating unit are kept in a non-contact state, where the second direction is the reverse direction of the first direction.

10. The thin film deposition device according to claim 6, characterized in that, It further includes a connection unit connected to the heating unit for eliminating the electric field change caused by the rotation and reset of the heating unit.

11. The thin film deposition device according to claim 10, characterized in that, The connection unit includes an elastic member and a radio frequency cable connected to the heating unit. When the heating unit rotates and resets, the elastic member drives the radio frequency cable to reset.

12. The thin film deposition device according to claim 10, characterized in that, The radio frequency cable passes through the power transmission unit and extends along the bending direction of the elastic member.

13. The thin film deposition device according to claim 10, characterized in that, The connection unit includes a slip ring and a radio frequency cable. The heating unit and the radio frequency cable are connected through the slip ring. When the heating unit rotates and resets, the radio frequency cable remains stationary.

14. A thin film deposition method, characterized in that, It includes the following steps: S1: Place the substrate in the processing chamber, and drive the heating tray to carry the substrate up to the process position. S2: Perform a thin film deposition on the surface of the substrate. S3: The inner circle of the magneto-fluid drives the heating unit to synchronously rotate a certain angle from the initial position through the power transmission unit. S4: The second power source drives the third carrier to carry the heating unit down to separate from the substrate, and the support ring supports the substrate. S5: The power transmission unit drives the heating unit to rotate in the reverse direction to the initial position. S6: The second power source drives the third carrier to carry the heating unit to rise synchronously, and the heating unit carries the substrate up to the process position. S7: Repeat step S2 - step S6 until n times of thin film depositions are completed.

15. The thin film deposition method according to claim 14, wherein, In step S3, the elastic member is fixedly connected to the heating unit. When the heating unit rotates, one end of the elastic member is stretched, causing the elastic member and the radio frequency cable to deform. In step S5, when the heating unit rotates and resets, the elastic member drives the radio frequency cable to rebound to the initial shape.

16. The thin film deposition method according to claim 14, wherein, In step S3, the heating unit is fixedly connected to the slip ring so that the two can rotate synchronously along the first direction. In step S5, the power transmission unit drives the rotor of the slip ring to rotate along the second direction, and the first direction is opposite to the second direction.

17. The thin film deposition method according to claim 14, wherein, In step S1, the step of driving the heating unit to carry the substrate up to the process position includes: The first power source drives the second carrier and the third carrier to rise synchronously. The second carrier drives the support ring to rise, and the third carrier drives the heating tray to rise synchronously until the heating tray contacts the substrate, or rises until the heating tray and the support ring jointly contact the substrate. The second power source drives the third carrier to carry the heating tray and the substrate to continue rising to the process position.

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