Ion source assembly and calibration method of ion implanter

Abstract

The invention discloses an ion source assembly and calibration method of an ion implanter, and belongs to the field of ion implanters, and the method comprises the steps: 1, assembling a filament and a cathode; 2, connecting the assembled lamp filament and cathode to a megohmmeter; 3, adjusting the gear of the megohmmeter to 500v, measuring the insulativity of the filament and the cathode, and observing whether the filament and the cathode discharge to generate electric arc; 4, adjusting the gear of the megohmmeter to 1000v, measuring the insulativity of the lamp filament and the cathode, and observing whether the lamp filament and the cathode discharge to generate an electric arc or not; 5, adjusting the gear of the megohmmeter to 2500v, measuring the insulativity of the lamp filament and the cathode, and observing whether the lamp filament and the cathode discharge to generate an electric arc or not; and 6, adjusting the gear of the megohmmeter to 5000v, measuring the insulativity of the lamp filament and the cathode, and observing whether the lamp filament and the cathode discharge to generate electric arc, thereby improving the maintenance success rate of the ion implanter.

Description

Technical Field

[0001] The present invention belongs to the technical field of ion implanters, and particularly relates to a method for assembling and calibrating an ion source of an ion implanter. Background Art

[0002] An ion implanter is a device used in semiconductor manufacturing, mainly for implanting ions into silicon wafers or other materials to change their electrical properties. An ion implanter generally includes an ion source, a mass spectrometer, an accelerator, and a processing chamber. The ion source includes a cathode and a filament. By arranging the cathode at the filament end, the service life of the filament can be extended. The filament is located inside the cathode, and electrons are generated by heating the filament to strike the inner wall of the cathode to make the cathode generate more electrons, so as to more easily collide with process gases.

[0003] However, when the filament and the cathode are installed, it is difficult to control the distance between the filament and the inner wall of the cathode. When the distance is too close, the electrons generated at the initial stage of the filament arcing will cause a short circuit of the cathode, and the machine will give an alarm of low impedance in the bias circuit. At this time, it is necessary to break the vacuum and disassemble the ion source, and then readjust the distance between the filament and the inner wall of the cathode. When the distance is too far, during the process of the machine arcing to find the best filament, the filament current will be greater than 110A and an alarm will be given. At this time, the search for the best filament fails, and it is also necessary to break the vacuum and disassemble the ion source, and then readjust the distance between the filament and the inner wall of the cathode. Among them, when the ion implanter gives an alarm and the ion source is disassembled and reassembled, the maintenance time of the ion implanter will increase, and the maintenance success rate of the ion implanter will be reduced. Summary of the Invention

[0004] In order to solve the above problems existing in the prior art, the present invention provides a method for assembling and calibrating an ion source of an ion implanter. The technical problems to be solved by the present invention are realized through the following technical solutions:

[0005] In a first aspect, the present invention provides a method for assembling and calibrating an ion source of an ion implanter, including an ion source and a calibration tool. The ion source includes a filament and a cathode, and the calibration tool includes a megohmmeter. The method includes:

[0006] Step 1: Assemble the filament and the cathode;

[0007] Step 2: Connect both the assembled filament and cathode to the megohmmeter;

[0008] Step 3: Set the range of the megohmmeter to 500V, measure the insulation between the filament and the cathode, and observe whether an arc is generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode;

[0009] Step 4: Set the range of the megohmmeter to 1000V, measure the insulation between the filament and the cathode, and observe whether there is an arc generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode;

[0010] Step 5: Set the range of the megohmmeter to 2500V, measure the insulation between the filament and the cathode, and observe whether there is an arc generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode. When an arc is generated, control the cathode to move away from the filament;

[0011] Step 6: Set the range of the megohmmeter to 5000V, measure the insulation between the filament and the cathode, and observe whether there is an arc generated by the discharge between the filament and the cathode. When an arc is generated, there is no need to adjust the distance between the filament and the cathode. When no arc is generated, control the cathode to move towards the filament.

[0012] In an embodiment of the present invention, the ion source further includes a filament clamp and a cathode clamp, the calibration tool further includes a feeler gauge, the cathode includes a bottom plate and an annular side plate, and the bottom plate and the annular side plate enclose a receiving groove;

[0013] Assembling the filament and the cathode specifically includes:

[0014] Clamp the filament through the filament clamp, clamp the cathode through the cathode clamp, install the feeler gauge on the cathode clamp, perform calibration through the feeler gauge, and control the filament to move into the receiving groove and make the distance between the filament and the bottom plate 0.61mm.

[0015] In an embodiment of the present invention, the ion source further includes a cathode support rod, the cathode clamp is connected to the cathode support rod, the cathode clamp is provided with a first groove, the cathode support rod is provided with a second groove, and the difference in width between the second groove and the first groove is 0.61mm;

[0016] Clamp the filament through the filament clamp, clamp the cathode through the cathode clamp, install the feeler gauge on the cathode clamp, perform calibration through the feeler gauge, and control the filament to move into the receiving groove and make the distance between the filament and the bottom plate 0.61mm, specifically including:

[0017] Install the filament on the filament clamp and control the filament to move 1cm in the first direction;

[0018] Install the cathode on the cathode clamp and insert the feeler gauge into the first groove and the second groove at the same time;

[0019] Loosen the cathode clamp, control the cathode to move in the first direction to press against the feeler gauge, and clamp the cathode through the cathode clamp;

[0020] Loosen the filament clamp, control the filament to move in the second direction to press against the bottom plate, and clamp the filament through the filament clamp;

[0021] Release the cathode clamp, control the cathode to move along the second direction to the limit, and clamp the cathode through the cathode clamp. At this time, the distance between the filament and the base plate is 0.61 mm;

[0022] Wherein, the first direction and the second direction are opposite.

[0023] In an embodiment of the present invention, the cathode clamp includes a first base, a first chuck, a first bolt and a first nut. One end of the first chuck is connected to the first base. The first chuck includes a first left clip and a first right clip. A first clamping groove is formed between the first left clip and the first right clip. The end of the first clamping groove far from the first base is open;

[0024] The first chuck is provided with a first through hole, the first through hole penetrates through the first left clip and the first right clip, the first bolt is inserted into the first through hole, and the first bolt is threadedly connected with the first nut.

[0025] In an embodiment of the present invention, a first positioning groove is provided on the left side surface of the first left clip, a second positioning groove is provided on the right side surface of the first right clip, and both ends of the first through hole are communicated with the first positioning groove and the second positioning groove respectively;

[0026] The first bolt includes a first nut and a first stud. The first nut and the first nut are respectively arranged in the first positioning groove and the second positioning groove. One end of the first stud is connected to the first nut, and the other end passes through the first through hole and extends out and is threadedly connected with the first nut.

[0027] In an embodiment of the present invention, the ion source further includes a cathode support rod;

[0028] The cathode support rod and the cathode clamp are of an integral structure, or the cathode support rod is provided with a first mounting hole, and the first base is inserted into the first mounting hole.

[0029] In an embodiment of the present invention, the filament clamp includes a second base, a second chuck, a second bolt and a second nut. One end of the second chuck is connected to the second base. The second chuck includes a second left clip and a second right clip. A second clamping groove is formed between the second left clip and the second right clip. The end of the second clamping groove far from the second base is open;

[0030] The second chuck is provided with a second through hole, the second through hole penetrates through the second left clip and the second right clip, the second bolt is inserted into the second through hole, and the second bolt is threadedly connected with the second nut.

[0031] In an embodiment of the present invention, a third positioning groove is provided on the left side surface of the second left clip, a fourth positioning groove is provided on the right side surface of the second right clip, and both ends of the second through hole are communicated with the third positioning groove and the fourth positioning groove respectively;

[0032] The second bolt includes a second nut and a second stud. The second nut and the second nut are respectively arranged in the third positioning groove and the fourth positioning groove. One end of the second stud is connected to the second nut, and the other end passes through the second through hole and extends out and is threadedly connected to the second nut.

[0033] In an embodiment of the present invention, the filament clamp is inclined, and the second through hole is inclined.

[0034] In an embodiment of the present invention, the ion source further includes a filament support rod;

[0035] The filament support rod and the filament clamp are of an integral structure, or, the filament support rod is provided with a second mounting hole, and the second base is inserted into the second mounting hole.

[0036] Compared with the prior art, the beneficial effects of the present invention are:

[0037] In the above solution of the present application, the ion source assembly and calibration method includes: Step 1: Assemble the filament and the cathode; Step 2: Connect the assembled filament and cathode to a megohmmeter; Step 3: Adjust the range of the megohmmeter to 500v, measure the insulation between the filament and the cathode, and observe whether the filament and the cathode discharge to generate an arc. When no arc is generated, there is no need to adjust the distance between the filament and the cathode; Step 4: Adjust the range of the megohmmeter to 1000v, measure the insulation between the filament and the cathode, and observe whether the filament and the cathode discharge to generate an arc. When no arc is generated, there is no need to adjust the distance between the filament and the cathode; Step 5: Adjust the range of the megohmmeter to 2500v, measure the insulation between the filament and the cathode, and observe whether the filament and the cathode discharge to generate an arc. When no arc is generated, there is no need to adjust the distance between the filament and the cathode. When an arc is generated, control the cathode to move away from the filament; Step 6: Adjust the range of the megohmmeter to 5000v, measure the insulation between the filament and the cathode, and observe whether the filament and the cathode discharge to generate an arc. When an arc is generated, there is no need to adjust the distance between the filament and the cathode. When no arc is generated, control the cathode to move towards the filament. By adopting this method, when assembling the filament and the cathode, the distance between the filament and the cathode can be verified and adjusted by using multiple ranges of the megohmmeter, so that the distance between the filament and the cathode can meet the use requirements. Through the above assembly and calibration methods, the distance between the filament and the cathode can be accurately adjusted, avoiding alarms and re-disassembling the ion source due to too large or too small distance between the filament and the cathode, thereby reducing the maintenance time of the ion implanter and improving the maintenance success rate of the ion implanter.

[0038] The present invention will be further described in detail below with reference to the drawings and embodiments. Description of the Drawings

[0039] Figure 1It is a schematic diagram of the ion source assembly and calibration method provided by the embodiments of the present invention;

[0040] Figure 2 It is a schematic diagram of the connection between the ion source and the megohmmeter in the embodiments of the present invention;

[0041] Figure 3 It is a schematic diagram of the cathode clamp in the embodiments of the present invention;

[0042] Figure 4 It is a schematic diagram of the filament clamp in the embodiments of the present invention Figure 1 ;

[0043] Figure 5 It is a schematic diagram of the filament clamp in the embodiments of the present invention Figure 2 ;

[0044] Figure 6 It is a schematic diagram showing that the cathode clamp and the cathode support rod are of a split structure in the embodiments of the present invention Figure 1 ;

[0045] Figure 7 It is a schematic diagram showing that the cathode clamp and the cathode support rod are of a split structure in the embodiments of the present invention Figure 2 ;

[0046] Figure 8 It is a schematic diagram showing that the cathode clamp and the cathode support rod are of a split structure in the embodiments of the present invention Figure 3 ;

[0047] Figure 9 It is a schematic diagram showing that the cathode clamp and the cathode support rod are of a split structure in the embodiments of the present invention Figure 4 ;

[0048] Figure 10 It is a schematic diagram showing that the cathode clamp and the cathode support rod are of an integral structure in the embodiments of the present invention Figure 1 ;

[0049] Figure 11 It is a schematic diagram showing that the cathode clamp and the cathode support rod are of an integral structure in the embodiments of the present invention Figure 2 ;

[0050] Figure 12 It is a schematic diagram showing that the filament clamp and the filament support rod are of an integral structure in the embodiments of the present invention Figure 1 ;

[0051] Figure 13 It is a schematic diagram showing that the filament clamp and the filament support rod are of an integral structure in the embodiments of the present invention Figure 2 。

[0052] Reference numerals: 1 - cathode, 2 - filament, 3 - cathode clamp, 31 - first base, 32 - first chuck, 33 - first clamping groove, 34 - first perforation, 4 - filament clamp, 41 - second base, 42 - second chuck, 43 - second clamping groove, 44 - second perforation, 5 - cathode support rod, 6 - filament support rod. Detailed implementation manners

[0053] The following further describes the present invention in detail with reference to specific embodiments, but the implementation manners of the present invention are not limited thereto.

[0054] Please refer to Figure 1 and Figure 2 An ion source assembly and calibration method for an ion implanter is provided in an embodiment of the present invention, including an ion source and a calibration tool. The ion source includes a filament 2 and a cathode 1, and the calibration tool includes a megohmmeter. The method includes:

[0055] S1: Assemble the filament and the cathode;

[0056] S2: Connect the assembled filament and cathode to the megohmmeter;

[0057] S3: Set the range of the megohmmeter to 500V, measure the insulation between the filament and the cathode, and observe whether an arc is generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode;

[0058] S4: Set the range of the megohmmeter to 1000V, measure the insulation between the filament and the cathode, and observe whether an arc is generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode;

[0059] S5: Set the range of the megohmmeter to 2500V, measure the insulation between the filament and the cathode, and observe whether an arc is generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode. When an arc is generated, control the cathode to move away from the filament;

[0060] S6: Set the range of the megohmmeter to 5000V, measure the insulation between the filament and the cathode, and observe whether an arc is generated by the discharge between the filament and the cathode. When an arc is generated, there is no need to adjust the distance between the filament and the cathode. When no arc is generated, control the cathode to move towards the filament.

[0061] In an embodiment of the present invention, the ion source further includes a filament clamp 4 and a cathode clamp 3, the calibration tool further includes a feeler gauge, the cathode 1 includes a bottom plate and an annular side plate, and the bottom plate and the annular side plate enclose a receiving groove;

[0062] Assembling the filament and the cathode specifically includes:

[0063] Clamp the filament with a filament clamp, clamp the cathode with a cathode clamp, install a feeler gauge on the cathode clamp, calibrate through the feeler gauge, and control the movement of the filament into the receiving groove so that the distance between the filament and the bottom plate is 0.61 mm.

[0064] In some embodiments of the present application, an insulation resistance meter is externally connected to the filament and the cathode. By adjusting the insulation resistance meter to different gears, a stepped test of the insulation between the filament and the cathode is realized. At the same time, observe whether there is a discharge between the filament and the inner wall of the cathode, and the distance between the filament and the cathode can be accurately calibrated, improving the success rate of maintenance.

[0065] In some embodiments of the present application, for the ion implanter adjusted by the above method, the machine will not show a low impedance alarm in the bias circuit at the initial stage of the arc ignition of the filament 2. After the arc ignition, during the process of finding the best filament 2, the current of the filament 2 will be within 105 A ± 5 A, and the maintenance of the ion source is successful at one time.

[0066] In the above solution of the present application, the ion source assembly and calibration method includes an ion source and a calibration tool. The ion source includes a filament and a cathode, and the calibration tool includes an insulation resistance meter. The method includes: S1: Assemble the filament and the cathode; S2: Connect the assembled filament and cathode to the insulation resistance meter; S3: Adjust the gear of the insulation resistance meter to 500 v, measure the insulation between the filament and the cathode, and observe whether there is an arc generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode; S4: Adjust the gear of the insulation resistance meter to 1000 v, measure the insulation between the filament and the cathode, and observe whether there is an arc generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode; S5: Adjust the gear of the insulation resistance meter to 2500 v, measure the insulation between the filament and the cathode, and observe whether there is an arc generated by the discharge between the filament and the cathode. When no arc is generated, there is no need to adjust the distance between the filament and the cathode. When an arc is generated, control the cathode to move away from the filament; S6: Adjust the gear of the insulation resistance meter to 5000 v, measure the insulation between the filament and the cathode, and observe whether there is an arc generated by the discharge between the filament and the cathode. When an arc is generated, there is no need to adjust the distance between the filament and the cathode. When no arc is generated, control the cathode to move towards the filament. By using this method, when assembling the filament and the cathode, the distance between the filament and the cathode can be verified and adjusted by using multiple gears of the insulation resistance meter, so that the distance between the filament and the cathode can meet the use requirements. Through the above method of assembly and verification, the distance between the filament and the cathode can be accurately adjusted, avoiding alarms and reinstalling the ion source due to the excessive or too small distance between the filament and the cathode. Therefore, the maintenance time of the ion implanter can be reduced, the success rate of arc ignition can be improved, and the success rate of maintaining the ion implanter can be improved.

[0067] In some embodiments of the present application, the ion source further includes a filament clamp 4 and a cathode clamp 3, the calibration tool further includes a feeler gauge, the cathode 1 includes a bottom plate and an annular side plate, and the bottom plate and the annular side plate enclose a receiving groove;

[0068] Assembling the filament and the cathode specifically includes:

[0069] Clamp the filament with the filament clamp, clamp the cathode with the cathode clamp, install the feeler gauge on the cathode clamp, perform calibration through the feeler gauge, and control the filament to move into the receiving groove and make the distance between the filament and the bottom plate 0.61 mm. By using this method, when assembling the filament and the cathode, the distance between the filament and the cathode can be accurately adjusted, further improving the success rate of maintenance.

[0070] In some embodiments of the present application, the ion source further includes a cathode support rod 5, the cathode clamp 3 is connected to the cathode support rod 5, the cathode clamp 3 is provided with a first groove, and the cathode support rod 5 is provided with a second groove, and the width difference between the second groove and the first groove is 0.61 mm;

[0071] Clamp the filament with the filament clamp, clamp the cathode with the cathode clamp, install the feeler gauge on the cathode clamp, perform calibration through the feeler gauge, and control the filament to move into the receiving groove and make the distance between the filament and the bottom plate 0.61 mm, specifically including:

[0072] Install the filament on the filament clamp and control the filament to move 1 cm in the first direction;

[0073] Install the cathode on the cathode clamp and insert the feeler gauge into the first groove and the second groove at the same time;

[0074] Loosen the cathode clamp, control the cathode to move along the first direction to press against the feeler gauge, and clamp the cathode with the cathode clamp;

[0075] Loosen the filament clamp, control the filament to move along the second direction to press against the bottom plate, and clamp the filament with the filament clamp;

[0076] Loosen the cathode clamp, control the cathode to move along the second direction to the limit position, and clamp the cathode with the cathode clamp. At this time, the distance between the filament and the bottom plate is 0.61 mm;

[0077] Wherein, the first direction and the second direction are opposite. By using this method, the distance between the filament and the cathode can be further accurately adjusted, improving the success rate of maintenance of the ion implanter.

[0078] It should be noted that after the existing filament clamp 4 and cathode clamp 3 are used for a long time, the filament clamp 4 and the cathode clamp 3 will undergo thermal deformation under the action of current, resulting in a reduction in the positioning accuracy of the filament 2 after the filament clamp 4 clamps the filament 2, and a reduction in the positioning accuracy of the cathode 1 after the cathode clamp 3 clamps the cathode 1, thereby reducing the success rate of maintenance of the ion implanter.

[0079] In some embodiments of the present application, as Figure 3 shown, the cathode clamp 3 includes a first base 31, a first chuck 32, a first bolt and a first nut. One end of the first chuck 32 is connected to the first base 31. The first chuck 32 includes a first left clamping piece and a first right clamping piece. A first clamping groove 33 is formed between the first left clamping piece and the first right clamping piece. One end of the first clamping groove 33 far from the first base 31 is open.

[0080] A first through hole 34 is provided on the first chuck 32. The first through hole 34 penetrates through the first left clamping piece and the first right clamping piece. The first bolt is inserted into the first through hole 34, and the first bolt is threadedly connected to the first nut. With this structure, the cathode 1 can be clamped by the first left clamping piece and the first right clamping piece. By cooperating the first bolt and the first nut to apply pressure to the first left clamping piece and the first right clamping piece, the deformed cathode clamp 3 due to heat can be locked secondly, preventing the cathode 1 from sliding when being clamped by the cathode clamp 3, thereby improving the stability of the cathode clamp 3, further improving the positioning accuracy of the cathode 1, and improving the maintenance success rate of the ion implanter. At the same time, the service life of the cathode clamp 3 is increased, and the cost of consumables is reduced.

[0081] In some embodiments of the present application, as Figure 3 shown, a first positioning groove is provided on the left side surface of the first left clamping piece, a second positioning groove is provided on the right side surface of the first right clamping piece, and both ends of the first through hole 34 communicate with the first positioning groove and the second positioning groove respectively; the first bolt includes a first nut and a first stud. The first nut and the first nut are respectively arranged in the first positioning groove and the second positioning groove. One end of the first stud is connected to the first nut, and the other end passes through the first through hole 34 and extends out and is threadedly connected to the first nut. With this structure, through the limiting cooperation of the first positioning groove and the first nut, and through the limiting cooperation of the second positioning groove and the first nut, the connection stability of the first bolt and the first nut can be improved.

[0082] In an alternative embodiment, as Figure 6 , Figure 7 , Figure 8 and Figure 9 shown, the ion source further includes a cathode support rod 5; the cathode support rod 5 and the cathode clamp 3 are of a split structure. Among them, a first mounting hole is provided on the cathode support rod 5. The first base 31 is inserted into the first mounting hole. A through hole is provided on the first base 31, and a through hole is provided on the cathode support rod 5. The bolt passes through the through hole on the cathode support rod 5 and the through hole on the first base 31 in sequence and extends out and is locked with the nut, so that the first base 31 and the cathode support rod 5 are fixedly connected.

[0083] In another alternative embodiment, as Figure 10 and Figure 11As shown, the cathode support rod 5 and the cathode clamp 3 are of an integral structure. With this structure, the cathode support rod 5 and the cathode clamp 3 can be integrally formed during processing, avoiding the installation error between the cathode support rod 5 and the cathode clamp 3, further improving the installation accuracy of the cathode clamp 3, and increasing the maintenance success rate of the ion implanter.

[0084] In some embodiments of the present application, as Figure 4 and Figure 5 shown, the filament clamp 4 includes a second base 41, a second chuck 42, a second bolt and a second nut. One end of the second chuck 42 is connected to the second base 41. The second chuck 42 includes a second left clip and a second right clip. A second clamping groove 43 is formed between the second left clip and the second right clip. One end of the second clamping groove 43 away from the second base 41 is open; a second through hole 44 is provided on the second chuck 42, and the second through hole 44 penetrates through the second left clip and the second right clip. The second bolt is inserted into the second through hole 44, and the second bolt is threadedly connected to the second nut. With this structure, the filament 2 can be clamped by the second left clip and the second right clip. By cooperating the second bolt and the second nut to apply pressure to the second left clip and the second right clip, the thermally deformed filament clamp 4 can be secondarily locked to prevent the filament 2 from sliding when being clamped by the filament clamp 4, thereby improving the stability of the filament clamp 4, further improving the positioning accuracy of the filament 2, and increasing the maintenance success rate of the ion implanter. At the same time, the service life of the filament clamp 4 is increased, and the cost of consumables is reduced.

[0085] In some embodiments of the present application, the filament 2 includes a first extension section, a discharge section and a second extension section. The discharge section is located in the accommodation groove of the cathode 1. The first extension section and the second extension section are respectively connected to both ends of the discharge section. Two filament clamps 4 are provided and the two filament clamps 4 are respectively connected to the first extension section and the second extension section.

[0086] In some embodiments of the present application, a third positioning groove is provided on the left side surface of the second left clip, and a fourth positioning groove is provided on the right side surface of the second right clip. Both ends of the second through hole 44 are communicated with the third positioning groove and the fourth positioning groove respectively;

[0087] The second bolt includes a second nut and a second stud. The second nut and the second nut are respectively arranged in the third positioning groove and the fourth positioning groove. One end of the second stud is connected to the second nut, and the other end passes through the second through hole 44 and extends out and is threadedly connected to the second nut. With this structure, through the limiting cooperation of the third positioning groove and the second nut, and through the limiting cooperation of the fourth positioning groove and the second nut, the connection stability of the second bolt and the second nut can be improved.

[0088] In some embodiments of the present application, as Figure 4 and Figure 5As shown, the filament clip 4 is inclined, and the second through hole 44 is inclined. With this structure, when the filament clip 4 is inclined, the installation of the filament clip 4 can be made more convenient.

[0089] In some embodiments of the present application, the first extension section of the filament 2 is on the left side, and the second extension section is on the right side. The first chuck 32 in the filament clip 4 that clamps the first extension section is inclined to the right relative to the first base 31, and the first chuck 32 in the filament clip 4 that clamps the second extension section is inclined to the left relative to the second base 41. In this way, the distance between the two filament clips 4 on the left and right sides can be increased, avoiding mutual influence between them.

[0090] In an alternative embodiment, the ion source further includes a filament support rod 6; the filament support rod 6 and the filament clip 4 are of a split structure. Among them, the filament support rod 6 is provided with a second mounting hole, the second base 41 is inserted into the second mounting hole, the second base 41 is provided with a through hole, the filament support rod 6 is provided with a through hole, and a bolt passes through the through hole on the filament support rod 6 and the through hole on the second base 41 in sequence and extends out and is locked with a nut, so that the second base 41 and the filament support rod 6 are fixedly connected.

[0091] In another alternative embodiment, as Figure 12 and Figure 13 shown, the filament support rod 6 and the filament clip 4 are of an integral structure. With this structure, the filament support rod 6 and the filament clip 4 can be integrally formed during processing, avoiding the installation error between the filament support rod 6 and the filament clip 4, further improving the installation accuracy of the filament clip 4, and improving the maintenance success rate of the ion implanter.

[0092] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of the present invention.

[0093] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality" means two or more unless otherwise specifically defined.

[0094] In the present invention, unless otherwise clearly specified or limited, the terms "installed", "connected", "coupled", "fixed", etc. shall be construed broadly. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the internal communication of two components or the interaction relationship between two components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0095] The above content is a further detailed description of the present invention in combination with specific preferred embodiments, and it cannot be determined that the specific implementation of the present invention is only limited to these descriptions. For those of ordinary skill in the technical field to which the present invention pertains, without departing from the concept of the present invention, several simple deductions or substitutions can still be made, and all should be regarded as belonging to the protection scope of the present invention.

Claims

1. A method for assembling and calibrating an ion source of an ion implanter, characterized in that: The invention comprises an ion source and a calibration tool, wherein the ion source comprises a filament and a cathode, the calibration tool comprises a megohmmeter, and the method comprises: Step 1: Assembling the filament and the cathode; Step 2: Connect the assembled filament and cathode to the megohmmeter; Step 3: Adjust the gear of the megohmmeter to 500V, measure the insulation of the filament and the cathode, and observe whether the filament and the cathode discharge to generate an arc. When no arc is generated, there is no need to adjust the distance between the filament and the cathode; Step 4: Adjust the gear of the megohmmeter to 1000V, measure the insulation of the filament and the cathode, and observe whether the filament and the cathode discharge to generate an arc. When no arc is generated, there is no need to adjust the distance between the filament and the cathode; Step 5: Adjust the gear of the megohmmeter to 2500V, measure the insulation of the filament and the cathode, and observe whether the filament and the cathode discharge to generate an arc. When no arc is generated, there is no need to adjust the distance between the filament and the cathode. When an arc is generated, control the cathode to move toward a side away from the filament. Step 6: Adjust the gear of the megohmmeter to 5000v, measure the insulation of the filament and the cathode, and observe whether the filament and the cathode discharge to generate an arc. When an arc is generated, there is no need to adjust the distance between the filament and the cathode. When no arc is generated, control the cathode to move toward the filament.

2. The ion source assembly and calibration method of an ion implanter according to claim 1, characterized in that: The ion source further comprises a filament clamp and a cathode clamp, the calibration tool further comprises a gap gauge, the cathode comprises a bottom plate and an annular side plate, and the bottom plate and the annular side plate form a receiving groove; Assembling the filament and the cathode specifically includes: The filament is clamped by the filament clamp, the cathode is clamped by the cathode clamp, the gap gauge is installed on the cathode clamp, and calibration is performed by the gap gauge to control the movement of the filament into the accommodating groove and make the distance between the filament and the bottom plate 0.61 mm.

3. The ion source assembly and calibration method of an ion implanter according to claim 2, characterized in that: The ion source further comprises a cathode support rod, the cathode clamp is connected to the cathode support rod, the cathode clamp is provided with a first groove, the cathode support rod is provided with a second groove, and the width of the second groove differs from the width of the first groove by 0.61 mm; The filament is clamped by the filament clamp, the cathode is clamped by the cathode clamp, the gap gauge is installed on the cathode clamp, and the gap gauge is calibrated to control the filament to move into the accommodating groove and make the distance between the filament and the bottom plate 0.61 mm, which specifically includes: Installing the filament on the filament clamp, and controlling the filament to move 1 cm along a first direction; Installing the cathode onto the cathode clamp, and inserting the gap gauge into the first slot and the second slot simultaneously; Loosen the cathode clamp, control the cathode to move in a first direction to be close to the gap gauge, and clamp the cathode by the cathode clamp; Loosen the filament clamp, control the filament to move in the second direction close to the bottom plate, and clamp the filament by the filament clamp; Loosen the cathode clamp, control the cathode to move along the second direction to a limit position, and clamp the cathode by the cathode clamp. At this time, the distance between the filament and the bottom plate is 0.61 mm; The first direction and the second direction are opposite.

4. The ion source assembly and calibration method of an ion implanter according to claim 2, characterized in that: The cathode clamp comprises a first base, a first clamp, a first bolt and a first nut, one end of the first clamp is connected to the first base, the first clamp comprises a first left clamp and a first right clamp, a first clamping groove is formed between the first left clamp and the first right clamp, and an end of the first clamping groove away from the first base is open; The first clamp is provided with a first through hole, the first through hole passes through the first left clamp and the first right clamp, the first bolt is inserted into the first through hole, and the first bolt is threadedly connected with the first nut.

5. The ion source assembly and calibration method of an ion implanter according to claim 4, characterized in that: A first positioning groove is provided on the left side surface of the first left clamping piece, a second positioning groove is provided on the right side surface of the first right clamping piece, and two ends of the first through hole are respectively connected to the first positioning groove and the second positioning groove; The first bolt includes a first nut and a first stud, which are respectively arranged in the first positioning groove and the second positioning groove, one end of the first stud is connected to the first nut, and the other end extends through the first through hole and is threadedly connected to the first nut.

6. The ion source assembly and calibration method of an ion implanter according to claim 4, characterized in that: The ion source also includes a cathode support rod; The cathode support rod and the cathode clamp are an integrated structure, or a first mounting hole is provided on the cathode support rod, and the first base is inserted into the first mounting hole.

7. The ion source assembly and calibration method of an ion implanter according to claim 2, characterized in that: The filament clamp comprises a second base, a second clamp, a second bolt and a second nut, one end of the second clamp is connected to the second base, the second clamp comprises a second left clamp and a second right clamp, a second clamping groove is formed between the second left clamp and the second right clamp, and an end of the second clamping groove away from the second base is open; The second clamp is provided with a second through hole, the second through hole passes through the second left clamp and the second right clamp, the second bolt is inserted into the second through hole, and the second bolt is threadedly connected with the second nut.

8. The ion source assembly and calibration method of an ion implanter according to claim 7, characterized in that: A third positioning groove is provided on the left side surface of the second left clamping piece, a fourth positioning groove is provided on the right side surface of the second right clamping piece, and two ends of the second through hole are respectively connected to the third positioning groove and the fourth positioning groove; The second bolt includes a second nut and a second stud, and the second nut and the second nut are respectively arranged in the third positioning groove and the fourth positioning groove, one end of the second stud is connected to the second nut, and the other end extends through the second through hole and is threadedly connected to the second nut.

9. The ion source assembly and calibration method of an ion implanter according to claim 8, characterized in that: The filament clamp is arranged obliquely, and the second through hole is arranged obliquely.

10. The ion source assembly and calibration method of an ion implanter according to claim 7, characterized in that: The ion source also includes a filament support rod; The filament support rod and the filament clamp are an integrated structure, or the filament support rod is provided with a second mounting hole, and the second base is inserted into the second mounting hole.

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