Semiconductor process equipment

Abstract

The invention provides semiconductor process equipment, which comprises a remote plasma source used for generating plasma; a reaction chamber; a connection region through which the plasma generated by the remote plasma source is conveyed to the reaction chamber; the connection area at least comprises an exhaust manifold arranged at a plasma output port on the remote plasma source; at least one constraining magnet is disposed on the exhaust manifold. According to the invention, by adding the constraining magnet on the exhaust manifold, a constant magnetic field can be superposed to the interior of the main body at the lower end of the remote plasma source, and the output stability of the plasma is controlled by adjusting the magnetic field intensity of the constraining magnet, so that the output efficiency of the plasma is improved; the technical effect of improving the dissociation efficiency of the plasma is achieved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor process equipment, and more particularly, to a semiconductor process equipment. Background Art

[0002] In semiconductor device manufacturing, plasma technology is widely used. The process of generating plasma is as follows: When a strong electric field is generated in a plasma chamber using an electrode (in the case of DC potential or RF excitation) or a waveguide (in the case of microwave), the field accelerates any available free electrons, increasing their internal energy (there are always some free electrons in any environment generated by cosmic rays, etc.). The free electrons collide with atoms or molecules in the gas phase. If the electrons transfer sufficient energy to the atoms / molecules during the collision, an ionization event occurs, producing a positive ion and another free electron. However, collisions that do not transfer sufficient energy for ionization can transfer enough energy to produce stable but reactive neutral species (i.e., molecular radicals). When sufficient energy is supplied to the system, a stable gas-phase plasma is generated, which contains free electrons, positive ions, and reactive neutral ions. The generated plasma can be used to perform plasma-based cleaning processes and / or plasma-assisted etching or deposition processes..

[0003] However, the disadvantages in the prior art are as follows: The stability of the output of the plasma can only be controlled by adjusting the parameters of the plasma source; moreover, when the temperature of the gas distribution system used to output the plasma changes, the stability of the output of the plasma will change with the temperature change of the gas distribution system, interfering with the stability of the gas-phase plasma input into the reaction chamber.

[0004] Therefore, there is an urgent need for a semiconductor process equipment that can improve the stability of the output of the plasma. Summary of the Invention

[0005] The object of the present invention is to provide a semiconductor process equipment to solve at least one technical problem existing in the prior art.

[0006] A semiconductor process equipment includes a remote plasma source for generating plasma, a reaction chamber, and a connection area through which the plasma generated by the remote plasma source is transported to the reaction chamber. The connection area at least includes an exhaust manifold disposed at the plasma outlet of the remote plasma source, and at least one restraining magnet is disposed on the exhaust manifold. By adding a restraining magnet on the exhaust manifold, a constant magnetic field can be superimposed inside the main body at the lower end of the remote plasma source, and the stability of the output of radicals of a processing gas (such as NF3) can be controlled by adjusting the magnetic field intensity of the restraining magnet, thereby improving the output efficiency of radicals of the processing gas (NF3) and achieving the technical effect of improving the dissociation efficiency of the plasma.

[0007] Further, the restraining magnet is a Helmholtz coil. Compared with the magnetic field formed by a single coil, by setting the restraining magnet as a Helmholtz coil, a more stable magnetic field can be obtained within a wider range.

[0008] Further, the exhaust manifold includes a vertically distributed intake pipe and a horizontal pipe communicating with the intake pipe. Among them, at least two horizontal pipes are provided, and the gas to be transported is sequentially transported to the gas distribution system through the intake pipe and the horizontal pipe.

[0009] Further, the gas distribution system is a shower head.

[0010] Further, the number of restraining magnets is 1 to 3. By setting restraining magnets at different parts of the exhaust manifold, the magnetic field can be controlled at different parts of the connection area.

[0011] Further, when the number of restraining magnets is 1, the restraining magnet is disposed at the intake pipe or one of the horizontal pipes.

[0012] Further, when the number of restraining magnets is 2, the restraining magnets are respectively disposed at the intake pipe and one of the horizontal pipes, or the restraining magnets are respectively disposed at two of the horizontal pipes.

[0013] Further, when the number of restraining magnets is 3, the restraining magnets are respectively disposed at the intake pipe and two of the horizontal pipes.

[0014] Further, the exhaust manifold is a ceramic part.

[0015] Further, the semiconductor process equipment is a deposition equipment or an etching equipment.

[0016] As described above, the present invention provides a semiconductor process equipment. By adding a constraining magnet to the exhaust manifold, a constant magnetic field can be superimposed inside the main body at the lower end of the remote plasma source. By adjusting the magnetic field strength of the constraining magnet, the stability of the plasma output can be controlled, thereby improving the output efficiency of the plasma and achieving the technical effect of improving the dissociation efficiency of the plasma. Description of the Drawings

[0017] By referring to the following description in conjunction with the drawings and the content of the claims, and with a more comprehensive understanding of the present invention, other objects and results of the present invention will become more apparent and easier to understand. In the drawings:

[0018] Figure 1 is a schematic diagram of the overall structure of a semiconductor process equipment according to an embodiment of the present invention.

[0019] Figure 2 is a schematic diagram of the structure of the semiconductor process equipment before improvement;

[0020] Figure 3 is a schematic diagram of the exhaust manifold structure before improvement;

[0021] Figure 4 is a schematic diagram of the structure of the semiconductor process equipment according to an embodiment of the present invention.

[0022] Figure 5 is a schematic diagram of the structure of a Helmholtz coil according to an embodiment of the present invention.

[0023] Figure 6 is a graph showing the relationship between the magnetic field generated by the Helmholtz coil according to an embodiment of the present invention and the coil spacing.

[0024] Figure 7 is a schematic diagram of the magnetic field inside the Helmholtz coil according to an embodiment of the present invention.

[0025] In the figure: 110, remote plasma source; 120, connection area; 130, exhaust manifold; 140, gas distribution system; 150, reaction chamber; 160, constraining magnet; 1301, intake pipe; 1302, first horizontal pipe; 1303, second horizontal pipe. Detailed Embodiments

[0026] In the following description, for the purpose of illustration, in order to provide a comprehensive understanding of one or more embodiments, many specific details are set forth. However, it is obvious that these embodiments can also be implemented without these specific details. In other instances, well-known structures and devices are shown in block diagram form for the purpose of facilitating the description of one or more embodiments.

[0027] It should be understood that the terms "horizontal", "vertical", "upper", "lower", "top", "middle", "length", "inner", "bottom", etc. indicating orientation or positional relationships are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the components or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present invention.

[0028] Unless otherwise clearly specified and defined, the terms "mounted", "connected", "coupled", "fixed", etc. should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection, an electrical connection, or in communication with each other; it can be directly connected, or indirectly connected through an intermediate medium, and can be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly defined. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0029] The various embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0030] Figure 1 FIG. shows a schematic overall structure diagram of a semiconductor processing apparatus according to an embodiment of the present invention; as Figure 1 shown, a remote plasma source 110 (Remote Plasma Source, abbreviated as RPS) is connected to a reaction chamber 150. The reaction chamber can be specifically used to perform plasma-based deposition processes and / or plasma-assisted etching processes, as well as cleaning processes. Such a reaction chamber is generally a vacuum chamber (also referred to as: a processing chamber), having one or more inlets, but these details are not specifically defined herein.

[0031] Plasma processing using a plasma unit can use a plasma formed from gases including hydrogen (H2), helium (He), argon (Ar), ammonia (NH3), and fluorine-containing gases (such as NF3, HF, or any combination of the gases), etc. The plasma can be inductively coupled or capacitively coupled, or the plasma can be formed by a microwave source in a remote plasma chamber. Exemplarily, the remote plasma source includes a magnetron generator and an applicator along the gas connection line. In the shown embodiment, microwave energy from the magnetron is coupled to the flowing gas in the applicator along the gas connection line. A precursor gas source is coupled to the gas connection line to introduce it into the excitation species source. A carrier gas source is also coupled to the gas pipe connection line. One or more branch lines can also be provided for additional reactants. As known in the art, depending on the form and volatility of the reaction species, the gas source can include gas cylinders and bubblers, etc.

[0032] In a specific embodiment, a semiconductor processing apparatus is used to perform a deposition process on a wafer. The deposition process includes, for example, chemical vapor deposition (CVD), physical vapor deposition (PVD), etc. Chemical vapor deposition includes, for example, plasma-enhanced chemical vapor deposition (PECVD), and atmospheric pressure chemical vapor deposition (APCVD), etc. In a PECVD apparatus, the plasma generated by a remote plasma source (RPS) participates in the deposition process, activates the gas molecules in the reactants into active ions, reduces the reaction temperature required, accelerates the diffusion of the reactants on the surface (surface mobility), increases the film formation speed, has a sputtering cleaning effect on the substrate and the film surface, sputters off the weakly bonded particles, thereby strengthening the adhesion between the formed film and the substrate. Due to the collision and scattering effects among atoms, molecules, ions, and electrons in the reactants, the thickness of the formed film is uniform.

[0033] In a specific embodiment, the semiconductor processing apparatus can also be used for etching processing. The remote plasma source can provide a large amount of ionized fluorine to etch and clean various structures under vacuum conditions. Since the remote plasma cleaning method indirectly generates plasma in a state where the plasma generator is separated from the chip process chamber, rapid etching can be achieved without damaging the chamber. The remote plasma source (equipment) uses electromagnetic oscillation energy transmission and high-voltage ignition to generate and maintain a specific density of various plasmas (such as fluorine ions, hydrogen ions, oxygen ions, etc.) required in semiconductor and chip manufacturing processes in a cavity with a special structure, realizing deep cleaning and precise etching in the chip manufacturing process.

[0034] In a specific embodiment, a remote plasma source can also be used to clean the reaction chamber; specifically, due to the film layer preparation process, residues will form inside the chamber and at the inlet. Therefore, after the film layer deposition is completed, or after each deposition step is executed, or after a large number of deposition steps are executed, the reaction chamber needs to be cleaned; in the art, a remote plasma source is usually used for this kind of cleaning. The cleaning process of the reaction chamber by the plasma can be a remote plasma-assisted dry cleaning process, in which a plasma formed by gases including hydrogen (H2), helium (He), argon (Ar), ammonia (NH3), and fluorine-containing gases (such as NF3, HF, or any combination of these gases) is mixed with other gases and transported to the reaction chamber, or the plasma and other gases can be provided to the reaction chamber along different paths and mixed when reaching the reaction chamber. The oxide is removed from the surface of the semiconductor substrate using the cleaning process.

[0035] In one embodiment, the processing gas can be nitrogen trifluoride. Specifically, nitrogen trifluoride is a colorless, odorless, and stable gas at room temperature, is a strong oxidant, and belongs to an excellent plasma processing gas.

[0036] Figure 2 and Figure 3 provides an overall description of semiconductor process equipment in the prior art. Among them, Figure 2 is a schematic structural diagram of the semiconductor process equipment before improvement; Figure 3 is a schematic structural diagram of the exhaust manifold before improvement.

[0037] As Figure 2 shown, a semiconductor process equipment includes a remote plasma source 110 for generating plasma; a reaction chamber 150; a connection region 120 for delivering the plasma generated by the remote plasma source 110 to the reaction chamber 150 through the connection region 120; the connection region 120 at least includes an exhaust manifold 130 disposed at the plasma outlet of the remote plasma source 110; in a specific implementation process, the connection region further includes a gas distribution system 140, and the gas distribution system can be a showerhead. Among them, the stability of the plasma output can only be controlled by adjusting the parameters of the plasma source. After the gas-phase plasma is output, its stability is not controlled. If the stability of the output plasma is insufficient, the processing efficiency of the reaction chamber will be reduced. When the reaction chamber is used to perform plasma-based processing, the reduction in the output stability of the plasma of the plasma source 110 will lead to a reduction in the plasma processing efficiency of the reaction chamber.

[0038] It should be noted that the remote plasma source can also be used to introduce the plasma processing gas into the reaction chamber. For example, the remote plasma source can be provided as a component for introducing deposition, etching, or cleaning gas (e.g., NF3) into the reaction area without using a showerhead. Whether there is a showerhead in the gas distribution system 140 or not, the change in temperature in the gas distribution system 140 will affect the delivery amount of NF3 radicals.

[0039] As Figure 3As shown, the exhaust manifold 130 includes a vertically distributed intake pipe 1301 and a horizontal pipe communicating with the intake pipe. Among them, at least two horizontal pipes are provided, namely a first horizontal pipe 1302 and a second horizontal pipe 1303. The gas to be transported, namely gas-phase plasma, is transported to the gas distribution system, i.e., the showerhead, after passing through the intake pipe 1301, the first horizontal pipe 1302, and the second horizontal pipe 1303 in sequence. When the temperature of the gas distribution system for outputting plasma changes, the stability of the output of the plasma will change with the temperature change of the gas distribution system, interfering with the stability of the gas-phase plasma input into the reaction chamber. By adding a constraint magnet 160 to the exhaust manifold, a constant magnetic field can be superimposed inside the main body at the lower end of the remote plasma source. By adjusting the magnetic field intensity of the constraint magnet, the stability of the output of the gas-phase plasma can be controlled, thereby improving the output efficiency of the gas-phase plasma and achieving the technical effect of improving the dissociation efficiency of the plasma.

[0040] Figures 4 to 7 A general description of the semiconductor process equipment according to the embodiments of the present invention is given. Among them, Figure 4 is a schematic structural diagram of the semiconductor process equipment according to the embodiments of the present invention. Figure 5 is a schematic structural diagram of the Helmholtz coil according to the embodiments of the present invention. Figure 6 is a relationship diagram of the magnetic field generated by the Helmholtz coil and the coil spacing according to the embodiments of the present invention. Figure 7 is a schematic diagram of the magnetic field inside the Helmholtz coil according to the embodiments of the present invention.

[0041] As Figures 4 - 7 shown, a semiconductor process equipment includes a remote plasma source 110 for generating plasma; a connection area 120 for transporting the plasma generated by the remote plasma source 110 to the reaction chamber through the connection area 120; the connection area 120 at least includes an exhaust manifold 130 provided at the plasma output port of the remote plasma source 110; in a specific implementation process, the connection area further includes a gas distribution system 140, and the gas distribution system is a showerhead. At least one constraint magnet 160 is provided on the exhaust manifold 130.

[0042] The constraint magnet 160 is a Helmholtz coil and an anti-Helmholtz coil. The magnetic flux of the constraint magnet 160 can be appropriately set according to process conditions, such as being within at least one range of approximately 0.001 T to 10 T, 0.01 T to 1 T, and 0.1 T to 0.5 T.

[0043] The so-called plasma refers to an electrically neutral ionized substance that has ions, electrons, and core particles. Plasma includes: almost the same number of free electrons and anode electrons. In a plasma, the particles have been ionized from the core particles. Therefore, when a plasma contains a large number of ions and electrons, it is a good conductor of electricity and is affected by magnetic fields. It should be noted that when the velocity r of charged particles (plasma, free radicals of NF3) forms an arbitrary angle with the magnetic induction intensity B, the charged particles move in a helical path in the magnetic field, and the gyroradius R is inversely proportional to the magnetic induction intensity B. The stronger the magnetic field, the smaller the radius. In this way, in a very strong magnetic field, the movement of each charged particle is confined to a very small range near a magnetic field line. That is to say, the center of the charged particle's gyration orbit (also called the guiding center) can only move longitudinally along the magnetic field line and cannot cross it. Only when the particles collide can the guiding center jump from one magnetic field line to another. Therefore, a strong magnetic field can greatly limit the transverse transport processes of charged particles (such as diffusion and heat conduction). The magnet can supply relatively simple parallel magnetic field lines that are closer to the plasma compared to other designs, and the magnetic field strength increases as the cube of the distance. In short, an axial magnetic field is generated by Helmholtz coils to confine the electrons in the plasma, increase the plasma density, and regulate the plasma distribution.

[0044] In a specific implementation process, by adding a constraining magnet 160 to the exhaust manifold, a constant magnetic field can be superimposed inside the main body at the lower end of the remote plasma source. By adjusting the magnetic field strength of the constraining magnet, the stability of the output of the gas-phase plasma can be controlled, thereby improving the output efficiency of the gas-phase plasma and achieving the technical effect of increasing the dissociation efficiency of the plasma.

[0045] It should be noted that as Figure 5As shown, a Helmholtz coil is a pair of coaxial circular coils that are parallel and connected to each other. The current directions in the two coils are the same and the magnitudes are equal. When the distance d between the coils is exactly equal to the radius R of the circular coil, such a circular current-carrying coil is a Helmholtz coil. The characteristic of this coil is that it can generate a relatively wide uniform magnetic field near the midpoint of its common axis. Using a rectangular coordinate system, the central axes of these two circular coils with a radius of R are coaxial with the z-axis. The z-coordinates of the two circular coils are respectively, and each conductor coil carries a current I in the same direction. It is set to minimize the non-uniformity of the magnetic field at the center position O (i.e., the origin) of the two coils. The Helmholtz coil has a large volume of the magnetic field uniform region, an open use space, and is easy to operate. It can realize one-dimensional, two-dimensional, and three-dimensional combined magnetic fields, can provide AC and DC magnetic fields, and there is a good linear relationship between the current and the magnetic field. In this embodiment, compared with the magnetic field formed by a single coil, by setting the constraint magnet as a Helmholtz coil, a more stable magnetic field can be obtained within a wider range. When the plasma is placed in the magnetic field generated by the Helmholtz coil, the intensity of the magnetic field generated by the Helmholtz coil can be adjusted by controlling the distance d between the two circular coils, and then the state of the plasma can be controlled. When the plasma is in a strong and stable magnetic field environment, the stability of its operation can be effectively controlled, thereby improving the output stability of the plasma and achieving the technical effect of improving the dissociation efficiency of the plasma. As an example, as Figure 6 shown, where μ0 is the magnetic permeability in vacuum; l is the current element; R is the radius of the circular coil; the magnetic induction intensity is B z The magnetic induction intensities of Coil 1 and Coil 2 when they exist alone are both B z of 1 T; when the magnetic induction intensities of the two energized circular coils in series are superimposed, the magnetic induction intensity is B z of 1.4 T.

[0046] The exhaust manifold 130 includes a vertically distributed intake pipe 1301 and a horizontal pipe communicating with the intake pipe; wherein, at least two horizontal pipes are provided, namely a first horizontal pipe 1302 and a second horizontal pipe 1303. The gas to be transported, namely gas-phase plasma, passes through the intake pipe 1301, the first horizontal pipe 1302, and the second horizontal pipe 1303 in sequence and is then transported to a gas distribution system, such as a shower head. The shower head can be located above the wafer support area. The plasma is delivered to the reaction chamber through the shower head. After the plasma is delivered to the reaction chamber 150, the reactants can be distributed across the surface area of the wafer through a manifold called a shower head. The exhaust manifold 130 is made of a non-conductive material, such as a ceramic part.

[0047] When the number of constraint magnets is 1, the Helmholtz coil is arranged at the intake pipe 1301, that is, the constraint magnet is sleeved on the outer periphery of the intake pipe. The magnetic field generated by the Helmholtz coil is superimposed inside the main body at the lower end of the remote plasma source 110 and at the intake pipe. By adjusting the magnetic field intensity of the constraint magnet, the stability of the plasma output is controlled, thereby improving the plasma output efficiency and achieving the technical effect of improving the plasma dissociation efficiency. By arranging the constraint magnet at the intake pipe of the exhaust manifold, a superimposed magnetic field is applied at the intake pipe, thereby enhancing the control of the plasma at the horizontal pipe.

[0048] Example 2

[0049] When the number of constraint magnets is 1, the constraint magnet is arranged at the horizontal pipe 1302, that is, the constraint magnet is sleeved on the outer periphery of the horizontal pipe. The magnetic field generated by the Helmholtz coil is superimposed inside the main body at the lower end of the remote plasma source 110 and at the horizontal pipe 1302. By adjusting the magnetic field intensity of the constraint magnet, the stability of the plasma output is controlled, thereby improving the plasma output efficiency and achieving the technical effect of improving the plasma dissociation efficiency.

[0050] Example 3

[0051] When the number of constraint magnets is 1, the constraint magnet is arranged at the horizontal pipe 1303, that is, the constraint magnet is sleeved on the outer periphery of the horizontal pipe. The magnetic field generated by the Helmholtz coil is superimposed inside the main body at the lower end of the remote plasma source 110 and at the horizontal pipe 1303. By adjusting the magnetic field intensity of the constraint magnet, the stability of the plasma output is controlled, thereby improving the plasma output efficiency and achieving the technical effect of improving the plasma dissociation efficiency.

[0052] Example 4

[0053] When the number of constraint magnets is 2, the constraint magnets are respectively arranged at the horizontal pipe 1302 and the horizontal pipe 1303, that is, the constraint magnets are sleeved on the outer peripheries of the two horizontal pipes. The magnetic field generated by the Helmholtz coil is superimposed inside the main body at the lower end of the remote plasma source 110 and at the horizontal pipe. By adjusting the magnetic field intensity of the constraint magnet, the stability of the plasma output is controlled, thereby improving the plasma output efficiency and achieving the technical effect of improving the plasma dissociation efficiency. By arranging the constraint magnets at the two horizontal pipes of the exhaust manifold, a superimposed magnetic field is applied at the horizontal pipe, thereby enhancing the control of the plasma at the horizontal pipe.

[0054] Example 5

[0055] When the number of the constraint magnets is two, the constraint magnets are respectively arranged on the intake pipe 1301 and the horizontal pipe 1302, that is, the constraint magnets are sleeved on the outer peripheries of the intake pipe and one horizontal pipe. The magnetic field generated by the Helmholtz coil is superimposed on the inside of the main body at the lower end of the remote plasma source 110, the intake pipe and the horizontal pipe. By adjusting the magnetic field intensity of the constraint magnets, the stability of the plasma output is controlled, and further the output efficiency of the plasma is improved, achieving the technical effect of improving the dissociation efficiency of the plasma. By arranging the constraint magnets at the intake pipe of the exhaust manifold and a single horizontal pipe, a superimposed magnetic field is applied at the intake pipe and the horizontal pipe, thereby enhancing the control of the plasma at the intake pipe and the horizontal pipe.

[0056] Example 6

[0057] When the number of the constraint magnets is two, the constraint magnets are respectively arranged on the intake pipe 1301 and the horizontal pipe 1303, that is, the constraint magnets are sleeved on the outer peripheries of the intake pipe and one horizontal pipe. The magnetic field generated by the Helmholtz coil is superimposed on the inside of the main body at the lower end of the remote plasma source 110, the intake pipe and the horizontal pipe. By adjusting the magnetic field intensity of the constraint magnets, the stability of the plasma output is controlled, and further the output efficiency of the plasma is improved, achieving the technical effect of improving the dissociation efficiency of the plasma. By arranging the constraint magnets at the intake pipe of the exhaust manifold and a single horizontal pipe, a superimposed magnetic field is applied at the intake pipe and the horizontal pipe, thereby enhancing the control of the plasma at the intake pipe and the horizontal pipe.

[0058] Example 7

[0059] When the number of the constraint magnets is three, the constraint magnets are respectively arranged on the intake pipe 1301, the horizontal pipe 1302 and the horizontal pipe 1303, that is, the constraint magnets are sleeved on the outer peripheries of the intake pipe and two horizontal pipes. The magnetic field generated by the Helmholtz coil is superimposed on the inside of the main body at the lower end of the remote plasma source 110, the intake pipe and the horizontal pipe. By adjusting the magnetic field intensity of the constraint magnets, the stability of the plasma output is controlled, and further the output efficiency of the plasma is improved, achieving the technical effect of improving the dissociation efficiency of the plasma. By arranging the constraint magnets at different parts of the exhaust manifold, a superimposed magnetic field is achieved at different parts of the connection area. That is to say, by arranging the constraint magnets at the intake pipe of the exhaust manifold and two horizontal pipes, a superimposed magnetic field is applied at the intake pipe and the horizontal pipes, thereby enhancing the control of the plasma at the intake pipe and the two horizontal pipes.

[0060] In summary, for the semiconductor process equipment provided by the present invention, by adding a constraining magnet to the exhaust manifold, a constant magnetic field can be superimposed inside the main body at the lower end of the remote plasma source. By adjusting the magnetic field intensity of the constraining magnet, the stability of the plasma output can be controlled, thereby improving the output efficiency of the plasma and achieving the technical effect of enhancing the dissociation efficiency of the plasma.

[0061] However, those skilled in the art should understand that various improvements can be made to the above-mentioned semiconductor process equipment provided by the present invention without departing from the content of the present invention. Therefore, the protection scope of the present invention should be determined by the content of the appended claims.

Claims

1. A semiconductor process equipment, characterized in that, Comprising, A remote plasma source for generating plasma; A reaction chamber; A connection region through which the plasma generated by the remote plasma source is transported to the reaction chamber; the connection region at least includes an exhaust manifold disposed at the plasma outlet of the remote plasma source; At least one constraining magnet is disposed on the exhaust manifold.

2. The semiconductor process equipment according to claim 1, characterized in that, The constraining magnet is a Helmholtz coil.

3. The semiconductor process equipment according to claim 1, characterized in that, The exhaust manifold includes a vertically distributed intake pipe and a horizontal pipe communicating with the intake pipe; wherein, at least two horizontal pipes are provided, and the gas to be transported passes through the intake pipe and the horizontal pipes in sequence and then is transported to the gas distribution system.

4. The semiconductor process equipment according to claim 3, characterized in that, The gas distribution system is a showerhead.

5. The semiconductor process equipment according to claim 2, characterized in that, The number of the constraining magnets provided is 1 to 3.

6. The semiconductor process equipment according to claim 5, characterized in that, When the number of the constraining magnets is 1, the constraining magnet is disposed at the intake pipe or one of the horizontal pipes.

7. The semiconductor process equipment according to claim 5, characterized in that, When the number of the constraining magnets is 2, the constraining magnets are respectively disposed at the intake pipe and one of the horizontal pipes, or the constraining magnets are respectively disposed at two of the horizontal pipes.

8. The semiconductor process equipment according to claim 5, characterized in that, When the number of the constraining magnets is 3, the constraining magnets are respectively disposed at the intake pipe and two of the horizontal pipes.

9. The semiconductor process equipment according to claim 1, characterized in that, The exhaust manifold is a ceramic component.

10. The semiconductor process equipment according to claim 1, characterized in that, The semiconductor process equipment is deposition equipment or etching equipment.

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