Method for preparing semiconductor element with ultra-low dielectric constant film
By controlling the formation time interval of ultra-low dielectric constant films in the reaction chamber and using robotic arms to achieve continuous production, the problems of uneven film thickness and unstable particle size are solved, and the production capacity and film quality are improved.
Patent Information
- Application Number
- CN202311753810.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-18
- Publication Date
- 2025-06-20
AI Technical Summary
In the prior art, when preparing semiconductor components with ultra-low dielectric constant films, the film thickness is uneven, the particle size is unstable, and the production capacity is low.
By controlling the time interval for forming ultra-low dielectric constant films at the beginning of adjacent reaction chambers, the films in each reaction chamber can be taken out in time after they are formed to prevent particles from falling off; and continuous production is achieved through the action flow of the robot arm.
It improves the thickness uniformity and particle size stability of ultra-low dielectric constant films, enhances the production capacity of the film, and meets production needs.
Smart Images
Figure CN120184016A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of semiconductor manufacturing, and more particularly, to a method for manufacturing semiconductor components with ultra-low dielectric constant films. Background Art
[0002] In modern times, microelectronics technology has become the foundation of the entire information industry and an important symbol reflecting a country's comprehensive strength and economic development level. With the development of integrated circuit technology, chips with high speed, high device density, low power consumption, and low cost have increasingly become the main products of ultra-large scale integrated circuit manufacturing.
[0003] The semiconductor industry has been increasingly researching ultra-low dielectric constant films (ULK, Ultra Low k), which have a very wide range of applications, especially in high-frequency devices, microprocessors, fiber optic communication devices, organic light-emitting diodes, etc.
[0004] In the existing process of manufacturing semiconductor components with ultra-low dielectric constant films, due to mechanical limitations, the thickness of the prepared films is uneven and the particle size is unstable; at the same time, there is also the problem of low production capacity. Summary of the Invention
[0005] The purpose of the present disclosure is to provide a method for manufacturing semiconductor components with ultra-low dielectric constant films.
[0006] To achieve the above purpose, the present disclosure provides a method for manufacturing semiconductor components with ultra-low dielectric constant films, the method comprising the following steps:
[0007] S1. Place the first semiconductor component in the first reaction chamber and start forming the ultra-low dielectric constant film;
[0008] Place the second semiconductor component in the second reaction chamber, and after an interval of 10 - 50 s, start forming the ultra-low dielectric constant film;
[0009] Place the third semiconductor component in the third reaction chamber, and after an interval of 20 - 50 s, start forming the ultra-low dielectric constant film;
[0010] S2. Switch the first reaction chamber, the second reaction chamber, and the third reaction chamber in sequence;
[0011] The switching includes: taking out the semiconductor component with the ultra-low dielectric constant film from the reaction chamber and placing the semiconductor component to be formed with the ultra-low dielectric constant film in the reaction chamber.
[0012] Optionally, in step S1, the placement of the first semiconductor component, the second semiconductor component, and the third semiconductor component is sequentially completed by a robotic arm.
[0013] Optionally, in step S2, the switching includes: stopping forming the ultra-low dielectric constant film in the reaction chamber, taking out the semiconductor element with the ultra-low dielectric constant film from the reaction chamber by a robotic arm, and placing the semiconductor element to be formed with the ultra-low dielectric constant film in the reaction chamber.
[0014] Optionally, after placing the semiconductor element to be formed with the ultra-low dielectric constant film in the first reaction chamber, start forming the ultra-low dielectric constant film;
[0015] After placing the semiconductor element to be formed with the ultra-low dielectric constant film in the second reaction chamber, after an interval of 10 - 50 s, start forming the ultra-low dielectric constant film;
[0016] After placing the semiconductor element to be formed with the ultra-low dielectric constant film in the third reaction chamber, after an interval of 20 - 50 s, start forming the ultra-low dielectric constant film.
[0017] Optionally, the method further includes: repeating step S2.
[0018] Optionally, the method further includes: cleaning the first reaction chamber, the second reaction chamber, and the third reaction chamber with fluorine plasma;
[0019] The method for cleaning the reaction chamber includes: cleaning the reaction chamber with a first pressure and a second pressure in sequence, and the first pressure is greater than the second pressure.
[0020] Optionally, the first pressure is 6 - 8 Torr, and the second pressure is 3 - 4 Torr.
[0021] Optionally, the time for cleaning the reaction chamber with the first pressure is 35 - 100 s, and the time for cleaning the reaction chamber with the second pressure is 35 - 100 s.
[0022] Optionally, the method for forming the ultra-low dielectric constant film is plasma enhanced chemical vapor deposition.
[0023] Optionally, the time for forming the ultra-low dielectric constant film is 60 - 190 s.
[0024] Through the above technical solutions, the method of the present disclosure controls the time interval for starting to form the ultra-low dielectric constant film in adjacent reaction chambers, so that the ultra-low dielectric constant film formed in each reaction chamber can be taken out in time, avoiding the problems of uneven film thickness and unstable particle size caused by the particles remaining in the reaction chamber falling on the film; and through the action process of the robotic arm and the continuous progress of the forming steps, continuous production is achieved. The method of the present disclosure can improve the production capacity of the ultra-low dielectric constant film, and the ultra-low dielectric constant film has uniform thickness and low particle size, meeting the production requirements.
[0025] Other features and advantages of the present disclosure will be described in detail in the subsequent specific implementation section. BRIEF DESCRIPTION OF THE DRAWINGS
[0026] The drawings are used to provide a further understanding of the present disclosure, and constitute a part of the specification. Together with the following specific implementation, they are used to explain the present disclosure, but do not constitute a limitation to the present disclosure. In the drawings:
[0027] Figure 1 is a flowchart of a specific implementation of the method for preparing a semiconductor device with an ultra-low dielectric constant film of the present disclosure. SPECIFIC IMPLEMENTATION
[0028] The following will describe in detail the specific implementation of the present disclosure with reference to the drawings. It should be understood that the specific implementation described herein is only used to illustrate and explain the present disclosure, and is not used to limit the present disclosure.
[0029] As Figure 1 shown, the present disclosure provides a method for preparing a semiconductor device with an ultra-low dielectric constant film, the method comprising the following steps:
[0030] S1. Place the first semiconductor device in the first reaction chamber and start forming the ultra-low dielectric constant film;
[0031] Place the second semiconductor device in the second reaction chamber, and after an interval of 10 - 50 s, start forming the ultra-low dielectric constant film;
[0032] Place the third semiconductor device in the third reaction chamber, and after an interval of 20 - 50 s, start forming the ultra-low dielectric constant film;
[0033] S2. Switch the first reaction chamber, the second reaction chamber, and the third reaction chamber in sequence;
[0034] The switching includes: taking out the semiconductor device with the ultra-low dielectric constant film from the reaction chamber and placing the semiconductor device to be formed with the ultra-low dielectric constant film in the reaction chamber.
[0035] The inventors of the present disclosure have found that during the process of waiting for the ultra-low dielectric constant film to be taken out after its formation, the particles remaining in the reaction chamber fall onto the film, resulting in uneven film thickness and unstable granularity; the method of the present disclosure controls the time interval for starting the formation of the ultra-low dielectric constant film in adjacent reaction chambers, enabling the ultra-low dielectric constant film formed in each reaction chamber to be taken out in a timely manner, improving the uniformity of the film thickness and reducing the granularity, and also improving the production capacity of the ultra-low dielectric constant film.
[0036] In the present disclosure, the picking, placing, and taking out of semiconductor elements in each step are all completed by a robotic arm.
[0037] In the present disclosure, "starting to form the ultra-low dielectric constant film" means starting to introduce the silicon matrix, and "stopping to form the ultra-low dielectric constant film" means stopping to introduce the silicon matrix.
[0038] According to an embodiment of the present disclosure, in step S1, the first semiconductor element, the second semiconductor element, and the third semiconductor element are sequentially placed by a robotic arm, and after the placement of the semiconductor element in the previous reaction chamber is completed, the next semiconductor element is immediately picked up and placed in the next reaction chamber; after the first semiconductor element is placed in the first reaction chamber, the silicon matrix is started to be introduced, and at the same time, the radio frequency is turned on to form the ultra-low dielectric constant film; after the second semiconductor element is placed in the second reaction chamber and after an interval of 10 - 50 s, the silicon matrix is started to be introduced, and at the same time, the radio frequency is turned on; after the third semiconductor element is placed in the third reaction chamber and after an interval of 20 - 50 s, the silicon matrix is started to be introduced, and at the same time, the radio frequency is turned on to form the ultra-low dielectric constant film.
[0039] In the present disclosure, in step S1, after the third semiconductor element is placed in the third reaction chamber, the semiconductor element to form the ultra-low dielectric constant film is picked up by the robotic arm and waits for the formation of the ultra-low dielectric constant film in the first reaction chamber to be completed; in step S2, each time the semiconductor element to form the ultra-low dielectric constant film is placed in the reaction chamber by the robotic arm, the next semiconductor element to form the ultra-low dielectric constant film is immediately picked up and waits for the formation of the film in the next reaction chamber to be completed.
[0040] In the present disclosure, after the formation of the film in each reaction chamber is completed, the semiconductor element with the ultra-low dielectric constant film is immediately taken out by the robotic arm, and the semiconductor element to form the ultra-low dielectric constant film is placed in the reaction chamber.
[0041] In the present disclosure, before starting to form the ultra-low dielectric constant film, helium plasma is introduced 2 to 5 s before introducing the silicon matrix; 1 s after introducing the silicon matrix, the pore-forming agent is introduced; before preparing to stop forming the ultra-low dielectric constant film, the pore-forming agent is stopped 1 s before stopping the introduction of the silicon matrix, and the helium plasma is stopped 2 to 5 s after stopping the introduction of the silicon matrix.
[0042] In the present disclosure, the radio frequency is turned on while introducing the silicon matrix, and the radio frequency is turned off while stopping the introduction of the silicon matrix.
[0043] According to an embodiment of the present disclosure, in step S2, the switching includes: stopping forming the ultra-low dielectric constant film in the reaction chamber, taking out the semiconductor element with the ultra-low dielectric constant film from the reaction chamber by the robotic arm and placing the semiconductor element to be formed with the ultra-low dielectric constant film in the reaction chamber.
[0044] In the present disclosure, two branches are provided on the robotic arm, and the taking out and placing of the semiconductor element in the chamber can be completed only through one stroke of extending into the reaction chamber.
[0045] According to an embodiment of the present disclosure, in step S2, after placing the semiconductor element to be formed with the ultra-low dielectric constant film in the first reaction chamber, the ultra-low dielectric constant film starts to be formed;
[0046] After placing the semiconductor element to be formed with the ultra-low dielectric constant film in the second reaction chamber, after an interval of 10 to 50 s, the ultra-low dielectric constant film starts to be formed;
[0047] After placing the semiconductor element to be formed with the ultra-low dielectric constant film in the third reaction chamber, after an interval of 20 to 50 s, the ultra-low dielectric constant film starts to be formed.
[0048] According to a specific embodiment of the present disclosure, step S2 includes:
[0049] S21. Taking the semiconductor element to be formed with the ultra-low dielectric constant film by the robotic arm and waiting for the formation of the ultra-low dielectric constant film in the first reaction chamber to be completed;
[0050] S22. Stopping the formation of the ultra-low dielectric constant film in the first reaction chamber, taking out the first semiconductor element with the ultra-low dielectric constant film from the first reaction chamber by the robotic arm and placing the semiconductor element to be formed with the ultra-low dielectric constant film in the first reaction chamber, taking the semiconductor element to be formed with the ultra-low dielectric constant film by the robotic arm and waiting for the formation of the ultra-low dielectric constant film in the second reaction chamber to be completed;
[0051] S23. Stop forming the ultra-low dielectric constant film in the second reaction chamber. Use a robotic arm to take out the second semiconductor element with the ultra-low dielectric constant film from the second reaction chamber and place the semiconductor element to be formed with the ultra-low dielectric constant film into the second reaction chamber. Use the robotic arm to pick up the semiconductor element to be formed with the ultra-low dielectric constant film and wait for the ultra-low dielectric constant film in the third reaction chamber to be completely formed;
[0052] S24. Stop forming the ultra-low dielectric constant film in the third reaction chamber. Use a robotic arm to take out the third semiconductor element with the ultra-low dielectric constant film from the third reaction chamber and place the semiconductor element to be formed with the ultra-low dielectric constant film into the third reaction chamber. Use the robotic arm to pick up the semiconductor element to be formed with the ultra-low dielectric constant film and wait for the ultra-low dielectric constant film in the first reaction chamber to be completely formed;
[0053] In the above steps S22 to S24, take out the semiconductor element with the ultra-low dielectric constant film and place it aside to wait for the next process, and then use the robotic arm to pick up the next semiconductor element to be formed with the ultra-low dielectric constant film;
[0054] In step S22, after placing the semiconductor element to be formed with the ultra-low dielectric constant film into the first reaction chamber, start forming the ultra-low dielectric constant film;
[0055] In step S23, after placing the semiconductor element to be formed with the ultra-low dielectric constant film into the second reaction chamber, after a interval of 10 - 50 s, start forming the ultra-low dielectric constant film;
[0056] In step S24, after placing the semiconductor element to be formed with the ultra-low dielectric constant film into the third reaction chamber, after a interval of 20 - 50 s, start forming the ultra-low dielectric constant film.
[0057] To achieve continuous production and improve production capacity, according to an embodiment of the present disclosure, the method further includes: repeating step S2.
[0058] According to an embodiment of the present disclosure, the method for forming an ultra-low dielectric constant thin film is plasma enhanced chemical vapor deposition (PECVD), and its conditions and raw materials are conventional in the art. For example, helium plasma can be used, with methyldiethoxysilane (mDEOS) as the silicon matrix and 1-methyl-4-isopropyl-1,3-cyclohexadiene (ATRP) as the pore former, at a pressure of 7 Torr; the temperature is 260 °C, the flow rate of the silicon matrix is 2.4 g / min, and the flow rate of the pore former is 3.2 g / min.
[0059] According to an embodiment of the present disclosure, the time for forming the ultra-low dielectric constant thin film is 60 - 190 s, preferably 180 - 190 s. Herein, the "time for forming the ultra-low dielectric constant thin film" refers to the time from the start of introducing the silicon matrix to the stop of introducing the silicon matrix.
[0060] In the present disclosure, the conditions for forming the ultra-low dielectric constant thin film in each cavity can be the same or different.
[0061] According to an embodiment of the present disclosure, the method further includes: after forming the ultra-low dielectric constant thin film three times in each cavity, using fluorine plasma to clean the first reaction chamber, the second reaction chamber, and the third reaction chamber; the method for cleaning the reaction chamber includes: cleaning the reaction chamber successively with a first pressure and a second pressure, where the first pressure is greater than the second pressure; using the larger first pressure can quickly clean and save time, improving the cleaning efficiency; then using the smaller second pressure to ensure a decrease in particle size and obtain a better cleaning effect; the method and other conditions for cleaning the reaction chamber are conventional in the art.
[0062] To obtain a better cleaning effect, according to an embodiment of the present disclosure, the first pressure is 6 - 8 Torr, for example, it can be 7 Torr; the second pressure is 3 - 4 Torr, for example, it can be 3.5 Torr; the time for cleaning the reaction chamber with the first pressure is 35 - 100 s, preferably 80 - 100 s; the time for cleaning the reaction chamber with the second pressure is 35 - 100 s, preferably 80 - 100 s; to not affect the production process, the total time for cleaning the reaction chamber is not greater than the total time for introducing helium plasma.
[0063] In the present disclosure, it is determined whether the cleaning of the reaction chamber is completed by RGA (Residual Gas Analysis); specifically, before forming the ultra-low dielectric constant film, the reaction chamber is cleaned using fluorine plasma, and the fluorine content therein is analyzed by residual gas analysis as the background value; after forming the ultra-low dielectric constant film three times, the reaction chamber is cleaned using fluorine plasma, and the fluorine content therein is analyzed by residual gas analysis. If the fluorine content at this time is the same as the background value, it is considered that the cleaning is completed, and the formation of the next ultra-low dielectric constant film can be carried out.
[0064] According to a specific embodiment of the present disclosure, the method for preparing a semiconductor device with an ultra-low dielectric constant film specifically includes the following steps:
[0065] Step S1: Through a robotic arm, a first semiconductor device is sequentially placed in a first reaction chamber, a second semiconductor device is placed in a second reaction chamber, and a third semiconductor device is placed in a third reaction chamber;
[0066] After the first semiconductor device is placed in the first reaction chamber, silicon matrix is introduced, and at the same time, radio frequency is turned on, and an ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0067] After the second semiconductor device is placed in the second reaction chamber and after an interval of 10 - 50 s, silicon matrix is introduced, and at the same time, radio frequency is turned on, and an ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0068] After the third semiconductor device is placed in the third reaction chamber and after an interval of 20 - 50 s, silicon matrix is introduced, and at the same time, radio frequency is turned on, and an ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0069] Step S2 includes:
[0070] S21: Use the robotic arm to pick up the semiconductor device to form an ultra-low dielectric constant film, and wait for the formation of the ultra-low dielectric constant film in the first reaction chamber to be completed;
[0071] S22: Stop forming the ultra-low dielectric constant film in the first reaction chamber, use the robotic arm to take out the first semiconductor device with the ultra-low dielectric constant film from the first reaction chamber and place the semiconductor device to form an ultra-low dielectric constant film in the first reaction chamber, use the robotic arm to pick up the semiconductor device to form an ultra-low dielectric constant film, and wait for the formation of the ultra-low dielectric constant film in the second reaction chamber to be completed;
[0072] S23. Stop forming the ultra-low dielectric constant film in the second reaction chamber. Use a robotic arm to take out the second semiconductor element with the ultra-low dielectric constant film from the second reaction chamber and place the semiconductor element to be formed with the ultra-low dielectric constant film in the second reaction chamber. Use the robotic arm to pick up the semiconductor element to be formed with the ultra-low dielectric constant film and wait for the ultra-low dielectric constant film in the third reaction chamber to be completely formed;
[0073] S24. Stop forming the ultra-low dielectric constant film in the third reaction chamber. Use a robotic arm to take out the third semiconductor element with the ultra-low dielectric constant film from the third reaction chamber and place the semiconductor element to be formed with the ultra-low dielectric constant film in the third reaction chamber. Use the robotic arm to pick up the semiconductor element to be formed with the ultra-low dielectric constant film and wait for the ultra-low dielectric constant film in the first reaction chamber to be completely formed;
[0074] In step S22, after placing the semiconductor element to be formed with the ultra-low dielectric constant film in the first reaction chamber, start introducing the silicon matrix and turn on the radio frequency at the same time. The ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0075] In step S23, after placing the semiconductor element to be formed with the ultra-low dielectric constant film in the second reaction chamber, after an interval of 10 - 50 s, start introducing the silicon matrix and turn on the radio frequency at the same time. The ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0076] In step S24, after placing the semiconductor element to be formed with the ultra-low dielectric constant film in the third reaction chamber, after an interval of 20 - 50 s, start introducing the silicon matrix and turn on the radio frequency at the same time. The ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0077] Step S3. Repeat step S2 once;
[0078] In steps S1 to S3, the time for forming the ultra-low dielectric constant film is 60 - 190 s, preferably 180 - 190 s;
[0079] Step S4. Use fluorine plasma to clean the first reaction chamber, the second reaction chamber and the third reaction chamber; The method for cleaning the reaction chamber includes: cleaning the reaction chamber successively with the first pressure and the second pressure, and the first pressure is greater than the second pressure;
[0080] The first pressure is 6 - 8 Torr, and the second pressure is 3 - 4 Torr; The time for cleaning the reaction chamber with the first pressure is 35 - 100 s, preferably 80 - 100 s; The time for cleaning the reaction chamber with the second pressure is 35 - 100 s, preferably 80 - 100 s.
[0081] By adopting the above specific implementation manner, the production capacity of the ultra-low dielectric constant film can be improved, and the ultra-low dielectric constant film has uniform thickness and low granularity, meeting the production requirements.
[0082] Embodiment
[0083] A semiconductor element with an ultra-low dielectric constant film is prepared by the following steps:
[0084] Step S1: Through a robotic arm, place the first semiconductor element into the first reaction chamber, the second semiconductor element into the second reaction chamber, and the third semiconductor element into the third reaction chamber in sequence;
[0085] After the first semiconductor element is placed in the first reaction chamber, start introducing the silicon matrix, and at the same time turn on the radio frequency. An ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD).
[0086] After the second semiconductor element is placed in the second reaction chamber and after a 20-second interval, start introducing the silicon matrix, and at the same time turn on the radio frequency. An ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD).
[0087] After the third semiconductor element is placed in the third reaction chamber and after a 40-second interval, start introducing the silicon matrix, and at the same time turn on the radio frequency. An ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD).
[0088] Step S2 includes:
[0089] S21: Use the robotic arm to pick up the semiconductor element to form an ultra-low dielectric constant film and wait for the ultra-low dielectric constant film in the first reaction chamber to be formed;
[0090] S22: Stop forming the ultra-low dielectric constant film in the first reaction chamber. Use the robotic arm to take out the first semiconductor element with the ultra-low dielectric constant film from the first reaction chamber and place the semiconductor element to be formed with the ultra-low dielectric constant film into the first reaction chamber. Use the robotic arm to pick up the semiconductor element to be formed with the ultra-low dielectric constant film and wait for the ultra-low dielectric constant film in the second reaction chamber to be formed;
[0091] S23: Stop forming the ultra-low dielectric constant film in the second reaction chamber. Use the robotic arm to take out the second semiconductor element with the ultra-low dielectric constant film from the second reaction chamber and place the semiconductor element to be formed with the ultra-low dielectric constant film into the second reaction chamber. Use the robotic arm to pick up the semiconductor element to be formed with the ultra-low dielectric constant film and wait for the ultra-low dielectric constant film in the third reaction chamber to be formed;
[0092] S24. Stop forming the ultra-low dielectric constant film in the third reaction chamber. Use a robotic arm to take out the third semiconductor element with the ultra-low dielectric constant film from the third reaction chamber and place the semiconductor element to be formed with the ultra-low dielectric constant film into the third reaction chamber. Use the robotic arm to pick up the semiconductor element to be formed with the ultra-low dielectric constant film and wait for the ultra-low dielectric constant film in the first reaction chamber to be completely formed;
[0093] In step S22, after placing the semiconductor element to be formed with the ultra-low dielectric constant film into the first reaction chamber, start to introduce the silicon matrix, and at the same time turn on the radio frequency. The ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0094] In step S23, after placing the semiconductor element to be formed with the ultra-low dielectric constant film into the second reaction chamber, wait for 20 s, then start to introduce the silicon matrix, and at the same time turn on the radio frequency. The ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0095] In step S24, after placing the semiconductor element to be formed with the ultra-low dielectric constant film into the third reaction chamber, wait for 40 s, then start to introduce the silicon matrix, and at the same time turn on the radio frequency. The ultra-low dielectric constant film is formed by plasma enhanced chemical vapor deposition (PECVD);
[0096] Step S3. Repeat step S2 once;
[0097] In steps S1 to S3, the time for forming the ultra-low dielectric constant film is 190 s, the pressure is 7 Torr, the temperature is 260 °C, helium plasma is used, the flow rate of methyl diethoxysilane (silicon matrix) is 2.4 g / min, and the flow rate of 1-methyl-4-isopropyl-1,3-cyclohexadiene (pore former) is 3.2 g / min;
[0098] Step S4. Use fluorine plasma to clean the first reaction chamber, the second reaction chamber and the third reaction chamber; The method for cleaning the reaction chamber includes: cleaning the reaction chamber with the first pressure and the second pressure in sequence, and the first pressure is greater than the second pressure;
[0099] The first pressure is 7 Torr; the second pressure is 3.5 Torr; the time for cleaning the reaction chamber with the first pressure is 100 s, and the time for cleaning the reaction chamber with the second pressure is 100 s;
[0100] Step S5. Sequentially and cyclically perform steps S2 to S4.
[0101] The preferred embodiments of the present disclosure have been described in detail above in conjunction with the accompanying drawings. However, the present disclosure is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present disclosure, various simple modifications can be made to the technical solutions of the present disclosure, and these simple modifications all fall within the protection scope of the present disclosure.
[0102] In addition, it should be noted that, in the various specific technical features described in the above specific embodiments, they can be combined in any suitable manner without conflict. To avoid unnecessary repetition, the present disclosure will not separately describe various possible combination manners.
[0103] Furthermore, any combination can be made among various different embodiments of the present disclosure, as long as it does not violate the idea of the present disclosure, and it should also be regarded as the content disclosed by the present disclosure.
Claims
1. A method for fabricating a semiconductor device with an ultra-low dielectric constant thin film, characterized in that, The method comprises the following steps: S1. Place the first semiconductor element in the first reaction chamber and start forming the ultra-low dielectric constant film; Place the second semiconductor element in the second reaction chamber, and after an interval of 10 - 50 s, start forming the ultra-low dielectric constant film; Place the third semiconductor element in the third reaction chamber, and after an interval of 20 - 50 s, start forming the ultra-low dielectric constant film; S2. Switch the first reaction chamber, the second reaction chamber, and the third reaction chamber in sequence; The switching includes: taking out the semiconductor element with the ultra-low dielectric constant film from the reaction chamber and placing the semiconductor element to be formed with the ultra-low dielectric constant film in the reaction chamber.
2. The method according to claim 1, wherein, In step S1, the placement of the first semiconductor element, the second semiconductor element, and the third semiconductor element is sequentially completed by a robotic arm.
3. The method according to claim 1, wherein, In step S2, the switching includes: stopping the formation of the ultra-low dielectric constant film in the reaction chamber, taking out the semiconductor element with the ultra-low dielectric constant film from the reaction chamber by a robotic arm, and placing the semiconductor element to be formed with the ultra-low dielectric constant film in the reaction chamber.
4. The method according to claim 3, wherein, After placing the semiconductor element to be formed with the ultra-low dielectric constant film in the first reaction chamber, start forming the ultra-low dielectric constant film; After placing the semiconductor element to be formed with the ultra-low dielectric constant film in the second reaction chamber, after an interval of 10 - 50 s, start forming the ultra-low dielectric constant film; After placing the semiconductor element to be formed with the ultra-low dielectric constant film in the third reaction chamber, after an interval of 20 - 50 s, start forming the ultra-low dielectric constant film.
5. The method according to claim 4, wherein, The method further comprises: repeating step S2.
6. The method according to claim 1, wherein, The method further comprises: cleaning the first reaction chamber, the second reaction chamber, and the third reaction chamber with fluorine plasma; The method for cleaning the reaction chamber includes: cleaning the reaction chamber with a first pressure and a second pressure in sequence, and the first pressure is greater than the second pressure.
7. The method according to claim 6, wherein, The first pressure is 6 - 8 Torr, and the second pressure is 3 - 4 Torr.
8. The method according to claim 7, wherein, The time for cleaning the reaction chamber with the first pressure is 35 - 100 s, and the time for cleaning the reaction chamber with the second pressure is 35 - 100 s.
9. The method according to claim 1, wherein, The method for forming the ultra-low dielectric constant film is plasma enhanced chemical vapor deposition.
10. The method according to claim 9, wherein, The time for forming the ultra-low dielectric constant film is 60 - 190 s.