Wafer etching device
By designing a wafer etching device including an etching cavity, a rotating mechanism and a clamping mechanism, the problem of etching in the prior art is solved, and uniform rotation and etching uniformity of the wafer in the etching liquid are achieved.
Patent Information
- Application Number
- CN202510414235.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-02
- Publication Date
- 2025-06-20
AI Technical Summary
The existing wafer etching devices cause uneven etching of wafers during the etching process, especially in short-time etching processes and high-viscosity reagent etching processes, which affect the yield and performance of the chip.
A wafer etching device including an etching cavity, a rotating mechanism and a clamping mechanism is designed. The rotating mechanism rotates relative to the etching cavity in a preset rotation direction, so that the wafer rotates around the rotation axis of the rotation mechanism along the circumferential rotation path in a vertical plane, ensuring that the wafer first enters the etching medicine liquid and leaves first, so as to ensure that all parts have the same residence time in the etching medicine liquid.
Through this device, the uniform rotation of the wafer in the etching liquid is ensured, and the residence time of each area in the etching liquid is ensured, thereby improving the uniformity of the etching and reducing the impact on the chip yield and performance.
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Figure CN120184058A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of semiconductor manufacturing technology, and more specifically, relates to a wafer etching device. Background Art
[0002] In semiconductor wet cleaning equipment, according to the characteristics of its cleaning mode, it can be divided into two types: single-wafer cleaning and batch cleaning. Among them, batch cleaning equipment is widely used because of its advantages such as high cleaning efficiency and low cost.
[0003] Generally, the cleaning process of batch cleaning equipment is to vertically immerse the wafer into the etching agent by a robotic arm for etching. After the etching is completed, the robotic arm is used to vertically lift the wafer out of the etching agent, and then transfer it to other cleaning tanks. Using the above technical solution, the problem is that when the wafer is immersed in the etching agent for etching, the bottom of the wafer first contacts the etching agent. Compared with the top of the wafer, the bottom of the wafer undergoes the etching reaction first. At the end of the etching, under the action of the robotic arm, the top of the wafer is first pulled out of the etching agent, while the bottom of the wafer is still in the etching agent and continues to undergo the etching reaction, resulting in the actual etching time of the bottom of the wafer being longer than that of the top of the wafer. For short-time etching processes and high-viscosity reagent etching processes, this phenomenon will seriously affect the etching uniformity, and even affect the yield and performance of the chip. Summary of the Invention
[0004] The purpose of the embodiments of this application is to provide a wafer etching device to solve the technical problem of uneven etching of wafers existing in the existing wafer etching devices.
[0005] To achieve the above purpose, the technical solution adopted in this application is: to provide a wafer etching device, including: An etching chamber filled with etching agent inside; A rotating mechanism that rotates relative to the etching chamber; A clamping mechanism connected to the rotating mechanism for fixing the wafer on the rotating mechanism; The rotating mechanism rotates relative to the etching chamber along a preset rotation direction, so that the wafer rotates along a preset circular rotation path in a vertical plane around the rotation axis of the rotating mechanism to enter and leave the etching agent; at least when the wafer rotates to the lowest point of the rotation path, the whole wafer is immersed in the etching agent.
[0006] Optionally, the preset rotation path includes a first position, a second position, and a third position; When the rotating mechanism is at the first position, the rotating mechanism is located outside the etching agent; When the rotating mechanism is at the second position, the rotating mechanism is located inside the etching agent; When the rotating mechanism is in the third position, the rotating mechanism is located outside the etching liquid, and the first position and the third position are respectively located on both sides of the second position.
[0007] Optionally, the rotating mechanism includes: A rotating motor; A rotating plate connected to the rotating part of the rotating motor, and the clamping mechanism is connected to the rotating plate.
[0008] Optionally, the number of the rotating plates is two, the two rotating plates are arranged at intervals, the clamping mechanism is located between the two rotating plates, and the rotation directions and rotation speeds of the two rotating plates are the same.
[0009] Optionally, the number of the rotating motors is two, the two rotating motors correspond to the two rotating plates one by one, and each rotating plate is connected to the rotating part of the corresponding rotating motor.
[0010] Optionally, the clamping mechanism includes: A carrier connected between the two rotating plates for supporting the wafer; A first clamping member slidably connected to the carrier plate; A second clamping member slidably connected to the carrier plate and jointly clamping the wafer with the carrier and the first clamping member.
[0011] Optionally, the clamping mechanism further includes: A limiting structure provided on the carrier, the first clamping member and the second clamping member, and the wafer is fixed within the limiting structure.
[0012] Optionally, the number of the limiting structures is multiple, and the multiple limiting structures are evenly spaced along the extending direction of the carrier.
[0013] Optionally, the limiting structure is a groove structure.
[0014] Optionally, the number of the carriers is two, the two carriers are arranged at intervals, and the distance between the two carriers is less than the diameter of the wafer.
[0015] Optionally, it further includes: A lifting mechanism including a driving part and a moving part connected to the driving part and moving up and down relative to the driving part in the vertical direction. The rotating mechanism is connected to the moving part, and the rotating mechanism rotates relative to the moving part around its rotation axis. The driving part is used to drive the rotating mechanism to approach or move away from the etching chamber.
[0016] The beneficial effects of the wafer etching device provided by this application are as follows: Compared with the prior art, the wafer etching device provided by this application includes an etching chamber, a rotating mechanism, and a clamping mechanism. Among them, the etching chamber contains an etching solution. The rotating mechanism can rotate relative to the etching chamber. The clamping mechanism is connected to the rotating mechanism and is used to fix the wafer on the rotating mechanism. The rotating mechanism rotates relative to the etching chamber along a preset rotation direction, so that the wafer rotates along a preset circular rotation path in the vertical plane around the rotation axis of the rotating mechanism to enter and leave the etching solution, so that the side of the wafer that first enters the etching solution leaves the etching solution first, so as to ensure that the etching time of the parts of the wafer that first enter and last enter the etching solution in the etching solution is the same, thereby ensuring the uniformity of wafer etching. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to more clearly illustrate the technical solutions in the embodiments of this application, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of this application. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0018] Figure 1 Structural schematic of the wafer etching device provided by the embodiment of this application Figure 1 ; Figure 2 Schematic diagram of the initial position of the rotating mechanism on the lifting mechanism; Figure 3 Schematic diagram of the structure of the rotating mechanism in the first position; Figure 4 Schematic diagram of the structure of the rotating mechanism in the second position; Figure 5 Schematic diagram of the structure of the rotating mechanism in the third position; Figure 6 Schematic diagram of the structure of the rotating mechanism provided by this application; Figure 7 Schematic diagram of the structure of the rotating mechanism provided by another embodiment of this application; Figure 8 Schematic diagram of the structure of the first rotating plate provided by the embodiment of this application; Figure 9 Schematic diagram of the structure of the second rotating plate provided by the embodiment of this application; Figure 10 Schematic diagram of the structure of the carrier provided by another embodiment of this application; Figure 11 Schematic diagram of the structure of the limiting structure provided by the embodiment of this application; Figure 12Schematic diagram of the limiting structure provided by another embodiment of the present application.
[0019] Among them, each reference numeral in the figure: 10, etching chamber; 20, rotating mechanism; 21, rotating motor; 211, rotating shaft; 21a, first rotating motor; 21b, second rotating motor; 22, first rotating plate; 221, first guiding hole; 222, second guiding hole; 23, second rotating plate; 231, third guiding hole; 232, fourth guiding hole; 30, clamping mechanism; 31, carrier; 31a, first carrier; 31b, second carrier; 311, accommodating groove; 312, first supporting surface; 313, second supporting surface; 32, first clamping member; 33, second clamping member; 34, limiting structure; 341, groove structure; 342, convex block; 343, guiding inclined surface; 35, first adjusting motor; 351, first adjusting screw rod; 352, first adjusting screw rod nut; 36, second adjusting motor; 361, second adjusting screw rod; 362, second adjusting screw rod nut; 40, wafer; 50, lifting mechanism; 51, slide rail module. Detailed implementation manners
[0020] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application clearer, the present application will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.
[0021] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.
[0022] It should be understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application.
[0023] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of this application, "a plurality" means two or more unless otherwise specifically defined.
[0024] A wafer 40 etching device, please refer to Figures 1 to 5 , which includes an etching chamber 10, a rotating mechanism 20, and a clamping mechanism 30.
[0025] The etching chamber 10 has an opening, and an etching solution is contained in the etching chamber 10. The rotating mechanism 20 is installed at a preset position and can rotate relative to the etching chamber 10. The clamping mechanism 30 is connected to the rotating mechanism 20 and is used to fix the wafer 40 on the rotating mechanism 20.
[0026] The rotating mechanism 20 rotates relative to the etching chamber 10 along a preset rotation direction, so that the wafer 40 rotates around the rotating mechanism 20 and enters and exits the etching solution along a preset circular rotation path in the vertical plane, and at least when the wafer 40 rotates to the lowest point of the rotation path, the entire wafer 40 is immersed in the etching solution.
[0027] Specifically, initially, the rotating mechanism 20 moves above the etching chamber 10 and is arranged at an angle with the vertical direction. The clamping mechanism 30 is in a released state. After the wafer 40 is placed on the clamping mechanism 30 by a transfer manipulator, the clamping mechanism 30 clamps the target wafer 40. It is set that the center line on the wafer 40 divides the wafer 40 into area A and area B. Among them, area A and area B are symmetrical about the center line on the wafer 40, and area A is located above area B.
[0028] After the clamping mechanism 30 fixes the wafer 40, the rotating mechanism 20 drives the wafer 40 to rotate around the rotation axis of the rotating mechanism 20 and enter the etching solution. At this time, area B first immerses in the etching solution. As the rotating mechanism 20 continues to rotate, area B that first enters the etching solution first leaves the etching solution. At this time, area A is located below area B, and driven by the rotating mechanism 20, area A finally leaves the etching solution, so that the area of the wafer 40 that first enters the etching solution first leaves the etching solution, ensuring that the residence time of each area on the wafer 40 in the etching solution is the same, so as to ensure the uniformity of the etching of the wafer 40 by the etching solution.
[0029] Compared with the prior art, the wafer 40 etching device provided by the present application includes an etching chamber 10, a rotating mechanism 20, and a clamping mechanism 30. Among them, an etching solution is contained in the etching chamber 10. The rotating mechanism 20 can rotate relative to the etching chamber 10. The clamping mechanism 30 is connected to the rotating mechanism 20 and is used to fix the wafer 40 on the rotating mechanism 20. The rotating mechanism 20 rotates relative to the etching chamber 10 along a preset rotation direction, so that the wafer 40 rotates along a preset circumferential rotation path in the vertical direction around the rotation axis of the rotating mechanism 20 to enter and leave the etching solution, so that the side of the wafer 40 that first enters the etching solution first leaves the etching solution, so as to ensure that the etching time of the parts of the wafer 40 that first enter and last enter the etching solution in the etching solution is the same, thereby ensuring the uniformity of the etching of the wafer 40.
[0030] Please refer to Figures 3 to 5 , in the present application, the preset rotation path includes a first position, a second position, and a third position.
[0031] Specifically, when the rotating mechanism 20 is in the first position, the rotating mechanism 20 is located outside the etching solution. At this time, the connection line between the center of the wafer 40 and the center line of the rotation axis 211 of the rotating mechanism 20 is set at a first angle with the vertical direction, and area A is located above area B.
[0032] The rotating mechanism 20 rotates uniformly from the first position to the second position. At this time, the wafer 40 clamped by the clamping mechanism 30 can only rotate around the rotation axis of the rotating mechanism 20, and the wafer 40 is fixed relative to the rotating mechanism 20 under the fixation of the clamping mechanism 30, and area B first immerses into the etching solution.
[0033] When the rotating mechanism 20 is in the second position, the rotating mechanism 20 is located inside the etching solution. At this time, the entire wafer 40 is immersed in the etching solution, and area A and area B are symmetrically arranged about the vertical direction. Subsequently, the rotating mechanism 20 continues to rotate uniformly, so that the clamping mechanism 30 drives the wafer 40 to move from the second position to the third position. During this process, area B moves above area A and first leaves the etching solution.
[0034] When the rotating mechanism 20 is in the third position, the rotating mechanism 20 is located outside the etching solution, and the first position and the third position are respectively located on both sides of the second position. At this time, the connection line between the center of the wafer 40 and the center line of the rotation axis 211 of the rotating mechanism 20 is set at a second angle with the vertical direction, and area B on the wafer 40 is located above area A, and the entire wafer 40 is located outside the etching solution.
[0035] In the present application, the first angle and the second angle are equal, that is, when the rotating mechanism 20 is in the first position and the third position respectively, the rotating mechanism 20 is symmetrically arranged about the vertical direction.
[0036] In another embodiment of the present application, the first angle is less than or greater than the second angle.
[0037] In the present application, the rotating mechanism 20 includes a rotating motor 21 and a rotating plate.
[0038] Please refer to Figure 6 , specifically, the rotating motor 21 includes a fixed part and a rotating part connected to the fixed part and rotating relative to the fixed part. The fixed part is the stator part of the rotating motor 21, and the rotating part is the rotor part of the rotating motor 21. The fixed part is fixed at a preset position outside the etching chamber 10. The rotating plate is connected to the rotating part of the rotating motor 21, and the part where the rotating plate is connected to the rotating part of the rotating motor 21 is located at one end in the length direction of the rotating plate. The clamping mechanism 30 is connected to the rotating plate.
[0039] Driven by the rotating motor 21, the rotating plate drives the clamping mechanism 30 to rotate around the rotation axis of the rotating part, so that the clamping mechanism 30 drives the wafer to move from the first position to the third position.
[0040] In the present application, the rotating motor 21 is a servo motor.
[0041] In an embodiment of the present application, the number of rotating plates is two. The two rotating plates are arranged at intervals. The clamping mechanism 30 is located between the two rotating plates, and the rotation directions and speeds of the two rotating plates are the same.
[0042] Specifically, the two rotating plates are respectively a first rotating plate 22 and a second rotating plate 23. The first rotating plate 22 and the second rotating plate are both fixedly connected to the rotating part of the rotating motor 21, such as on the rotating shaft of the rotating motor 21, to ensure that the rotation directions and speeds of the first rotating plate 22 and the second rotating plate 23 are the same. The first rotating plate 22 and the second rotating plate are arranged at intervals along the circumferential direction of the rotating shaft. The clamping mechanism 30 is located between the first rotating plate 22 and the second rotating plate 23. When the first rotating plate 22 and the second rotating plate 23 are both in the first position or the third position, and when the clamping mechanism 30 is in the state of releasing the wafer 40, the gap between the clamping mechanism 30 and the rotating shaft 211 can allow the transfer manipulator and the wafer 40 to pass through, so as to facilitate the transfer manipulator to place the wafer 40 on the clamping mechanism 30 or remove the wafer 40 from the clamping mechanism 30.
[0043] In an embodiment of the present application, the number of rotating motors 21 is two. The two rotating motors 21 correspond to the two rotating plates one by one. Each rotating plate is connected to the rotating part of the corresponding rotating motor 21, and the rotation speeds and directions of the two rotating motors 21 are the same.
[0044] Please refer to Figure 7, Specifically, the two rotating motors 21 are respectively a first rotating motor 21a and a second rotating motor 21b, the two rotating plates are respectively a first rotating plate 22 and a second rotating plate 23, the first rotating plate 22 is connected to the rotating part of the first rotating motor 21a, the second rotating plate 23 is connected to the rotating part of the second rotating motor 21b, and the first rotating motor 21a and the second rotating motor 21b are coaxially arranged.
[0045] When the first rotating motor 21a and the second rotating motor 21b are arranged opposite to or away from each other, the rotational speeds of the first rotating motor 21a and the second rotating motor 21b are the same and the rotation directions are opposite, so as to ensure that the rotation directions and rotational speeds of the first rotating plate 22 and the second rotating plate 23 are the same.
[0046] When the orientations of the first rotating motor 21a and the second rotating motor 21b are the same, the rotational speeds and rotation directions of the first rotating motor 21a and the second rotating motor 21b are both the same, so as to ensure that the rotation directions and rotational speeds of the first rotating plate 22 and the second rotating plate 23 are the same.
[0047] During the process of the rotating mechanism 20 moving from the first position to the third position, the first rotating motor 21a and the second rotating motor 21b are started simultaneously, so that the first rotating plate 22 and the second rotating plate 23 drive the clamping mechanism 30 and the wafer 40 to move uniformly from the first position to the third position.
[0048] Compared with the technical solution in which the first rotating plate 22 and the second rotating plate 23 are driven to rotate by the rotating shaft 211 on the same rotating motor 21, in the technical solution in which the first rotating plate 22 and the second rotating plate 23 are respectively driven by the first rotating motor 21a and the second rotating motor 21b in the above technical solution, the first rotating motor 21a and the second rotating motor 21b are arranged at intervals, and there is a larger operating space between the first rotating plate 22 and the second rotating plate 23 to allow the transfer manipulator and the wafer 40 to pass through, so as to facilitate the transfer manipulator to place the wafer 40 in the clamping mechanism 30, or to facilitate the transfer manipulator to take out the wafer 40 from the clamping mechanism 30.
[0049] In some other embodiments of the present application, the rotating motor 21 is a rotating cylinder.
[0050] In the present application, the clamping mechanism 30 includes a carrier 31, a first clamping member 32 and a second clamping member 33.
[0051] Please refer to Figures 6 to 9 , Specifically, the length direction of the carrier 31 is consistent with the direction of the rotation axis of the first rotating plate 22 and the second rotating plate 23. The carrier 31 is connected between the two rotating plates, and the length direction of the carrier 31 is parallel and spaced from the rotation axis of the first rotating plate 22 and the second rotating plate 23. The carrier 31 is used to support the wafer 40.
[0052] The length directions of both the first clamping member 32 and the second clamping member 33 are the same as the length direction of the carrier member 31. The two ends of the first clamping member 32 and the second clamping member 33 in the length direction are respectively slidably connected to the first rotating plate 22 and the second rotating plate 23. The first clamping member 32 and the second clamping member 33 are parallel and spaced apart. The first clamping member 32 and the second clamping member 33 can approach or move away from each other, so as to clamp and release the wafer 40. When the first clamping member 32 and the second clamping member 33 approach each other and the distance between the first clamping member 32 and the second clamping member is the smallest, and the distance between the first clamping member 32 and the second clamping member is less than the diameter of the wafer 40, at this time, the first clamping member 32, the second clamping member 33 and the carrier member 31 jointly clamp the wafer 40. When the first clamping member 32 and the second clamping member 33 move away from each other and the distance between the first clamping member 32 and the second clamping member is the largest, at this time, the distance between the first clamping member 32 and the second clamping member is greater than the diameter of the wafer 40, and the first clamping member 32 and the second clamping member 33 are in a state of releasing the wafer 40.
[0053] In the present application, a first guiding hole 221 and a second guiding hole 222 are provided on the first rotating plate 22, and a third guiding hole 231 and a fourth guiding hole 232 are provided on the second rotating plate 23. The length dimensions of the first guiding hole 221, the second guiding hole 222, the third guiding hole 231 and the fourth guiding hole 232 are greater than their diameter dimensions, and the length dimensions of the first guiding hole 221, the second guiding hole 222, the third guiding hole 231 and the fourth guiding hole 232 are equal. The first guiding hole 221 and the second guiding hole 222 are located on the same axis, and the first guiding hole 221 and the second guiding hole 222 are spaced apart. The third guiding hole 231 and the fourth guiding hole 232 are located on the same axis, and the third guiding hole 231 and the fourth guiding hole 232 are spaced apart.
[0054] The position of the first guiding hole 221 and the position of the third guiding hole 231 are oppositely arranged, and the position of the second guiding hole 222 and the position of the fourth guiding hole 232 are oppositely arranged. The two ends of the axial length of the first clamping member 32 are respectively slidably connected to the first guiding hole 221 and the third guiding hole 231, and the two ends of the axial length of the second clamping member 33 are respectively slidably connected to the second guiding hole 222 and the fourth guiding hole 232.
[0055] When the first clamping member 32 is located at one end of the first guiding hole 221 and the third guiding hole 231 close to the second guiding hole 222 and the fourth guiding hole 232 respectively, and when the second clamping member 33 is located at one end of the second guiding hole 222 and the fourth guiding hole 232 close to the first guiding hole 221 and the second guiding hole 222 respectively, the first clamping member 32 and the second clamping member 33 are in the clamping position of the wafer 40. When the first clamping member 32 is located at one end of the first guiding hole 221 and the third guiding hole 231 away from the second guiding hole 222 and the fourth guiding hole 232 respectively, and when the second clamping member 33 is located at one end of the second guiding hole 222 and the fourth guiding hole 232 away from the first guiding hole 221 and the second guiding hole 222 respectively, the first clamping member 32 and the second clamping member 33 are in the releasing position of the wafer 40.
[0056] In the present application, the first clamping member 32 and the second clamping member 33 are respectively driven by a first adjusting motor 35 and a second adjusting motor 36, so that the first clamping member 32 and the second clamping member 33 move between the clamping position and the releasing position. Wherein, the first adjusting motor 35 and the second adjusting motor 36 are fixed on the first rotating plate 22 or the second rotating plate 23.
[0057] A first adjusting lead screw 351 is connected to the rotating shaft of the first adjusting motor 35. The first adjusting lead screw 351 is in threaded connection with a first adjusting lead screw nut 352. The first adjusting lead screw nut 352 is connected to the first clamping member 32 and is used to drive the first clamping member 32 to move between the clamping position and the releasing position. A second adjusting lead screw 361 is connected to the rotating shaft of the second adjusting motor 36. The second adjusting lead screw 361 is in threaded connection with a second adjusting lead screw 361 nut. The second adjusting lead screw 361 nut is connected to the second clamping member 33 and is used to drive the second adjusting member to move between the clamping position and the releasing position.
[0058] In other embodiments of the present application, the first clamping member 32 moves between the clamping position and the releasing position through a first servo motor. The second clamping member 33 moves between the clamping position and the releasing position through a second servo motor.
[0059] The first servo motor is connected to the first rotating plate 22 or the second rotating plate 23. A first lead screw is provided on the first servo motor. A first lead screw nut is provided on the first lead screw. The first lead screw nut is connected to the first clamping member 32. The first lead screw and the first lead screw nut are configured to be able to drive the first clamping member 32 to move between the clamping position and the releasing position. The second servo motor is connected to the first rotating plate 22 or the second rotating plate 23. A second lead screw is provided on the second servo motor. A second lead screw nut is provided on the second lead screw. The second lead screw nut is connected to the second clamping member 33. The second lead screw and the second lead screw nut are configured to be able to drive the second clamping member 33 to move between the clamping position and the releasing position.
[0060] In this application, the clamping mechanism 30 further includes a limiting structure 34.
[0061] The limiting structure 34 is disposed on the carrier 31, the first clamping member 32, and the second clamping member 33, and the wafer 40 is fixed within the limiting structure 34. When the transfer manipulator transports the wafer 40 onto the carrier 31, the wafer 40 is located within the limiting structure 34, thereby achieving the preliminary fixation of the wafer 40.
[0062] The number of the limiting structures 34 is multiple, such as 25 or 50. The multiple limiting structures 34 are evenly spaced along the extending direction of the carrier 31, the first clamping member 32, and the second clamping member 33. When the transfer manipulator places multiple wafers 40 on the support member simultaneously, each limiting structure 34 accommodates one wafer 40. After the first clamping member 32, the second clamping member 33, and the support member clamp the multiple wafers 40, when the rotating mechanism 20 moves from the first position to the third position, etching of the multiple wafers 40 is achieved simultaneously.
[0063] In one embodiment of the application, the limiting structure 34 is a groove structure 341.
[0064] Please refer to Figure 11 and Figure 12 Specifically, in this application, the limiting structure 34 is a groove structure 341. The groove structure 341 is annularly arranged along the circumferences of the carrier 31, the first clamping member 32, and the second clamping member 33. The multiple groove structures 341 are evenly spaced along the length direction of the carrier 31, the first clamping member 32, and the second clamping member 33, and the positions of the multiple groove structures 341 on the carrier 31 correspond one-to-one with the positions of the multiple groove structures 341 on the first clamping member 32 and the second clamping member 33 respectively. When the first clamping member 32 and the second clamping member 33 clamp the wafer 40, the groove structures 341 on the carrier 31, the first clamping member 32, and the second clamping member 33 together fix the wafer 40.
[0065] In this application, the groove structure 341 is a recessed groove in the carrier 31, the first clamping member 32, and the second clamping member 33, or the groove structure 341 is a gap between any adjacent protrusions 342 protruding on the carrier 31, the first clamping member 32, and the second clamping member 33, and the protrusions 342 are annularly arranged along the circumferences of the carrier 31, the first clamping member 32, and the second clamping member 33.
[0066] In this application, guiding inclined surfaces 343 are provided on both side walls of the groove structure 341 opposite to each other along the radial direction of the wafer 40. Under the guiding action of the guiding inclined surfaces 343, it is convenient for the wafer 40 to enter the groove structure 341 on the carrier 31, the first clamping member 32, and the second clamping member 33.
[0067] In the present application, the number of the carrier members 31 is two. The two carrier members 31 are arranged at intervals, and the distance between the two carrier members 31 is smaller than the diameter of the wafer 40.
[0068] Please refer to Figure 8 and Figure 9 , specifically, the two carrier members 31 are respectively a first carrier member 31a and a second carrier member 31b. The first carrier member 31a and the second carrier member 31b are parallel and arranged at intervals, and the distance between the first carrier member 31a and the second carrier member 31b is smaller than the diameter of the wafer 40.
[0069] Please refer to Figure 10 , in some other embodiments of the present application, the number of the carrier members 31 is one, and the carrier member 31 is provided with a receiving groove 311. The receiving groove 311 has an opening, and the receiving groove 311 extends along the extending direction of the carrier member 31. The two side walls of the receiving groove 311 opposite to each other in the radial direction of the wafer 40 are arranged at an angle to form a first support surface 312 and a second support surface 313 for supporting the wafer 40. The limiting structure 34 is the gap between any adjacent bumps 342 protruding on the first support surface 312 and the second support surface 313.
[0070] In an embodiment of the present application, the wafer etching device further includes a lifting mechanism 50.
[0071] Please refer to Figures 1 to 5 , the lifting mechanism 50 includes a driving part and a moving part connected to the driving part and moving up and down relative to the driving part in the vertical direction. The rotating mechanism 20 is connected to the moving part, and the rotating mechanism 20 rotates relative to the moving part around its rotation axis. The moving part is used to drive the rotating mechanism 20 to approach or move away from the etching chamber 10.
[0072] Specifically, in an embodiment of the present application, the driving part in the lifting mechanism 50 is a slide rail module 51, and the slide rail module 51 is arranged in the vertical direction. The moving part in the lifting mechanism 50 is a sliding seat on the slide rail module 51.
[0073] When the first rotating plate 22 and the second rotating plate 23 in the rotating mechanism 20 are driven by the same rotating motor 21, the fixing part of the rotating motor 21 is connected to the sliding seat of the slide rail module 51 to ensure that the rotating mechanism 20 can rotate relative to the lifting mechanism 50. The sliding seat moves in the vertical direction on the slide rail module 51, and is used to drive the rotating mechanism 20 and the clamping mechanism 30 to drive the wafer 40 to approach or move away from the etching chamber 10 in the vertical direction.
[0074] When the first rotating plate 22 and the second rotating plate 23 in the rotating mechanism 20 are respectively driven by the first rotating motor 21a and the second rotating motor 21b, the fixed part of the first rotating or second rotating motor 21b is connected to the sliding seat of the sliding rail module 51 to ensure that the rotating mechanism 20 can rotate relative to the lifting mechanism 50. The sliding seat moves along the vertical direction on the sliding rail module 51, and is used to drive the rotating mechanism 20 and the clamping mechanism 30 to drive the wafer 40 to approach or move away from the etching chamber 10 in the vertical direction.
[0075] Initially, the distance between the rotation axis of the rotating mechanism 20 driven by the lifting mechanism 50 and the etching chamber 10 in the vertical direction is the first distance. At this time, the rotating mechanism 20 is located at the second position, and the first clamping member 32 and the second clamping member 33 in the clamping mechanism 30 are in the release position. After the transfer manipulator places the wafer 40 on the carrier 31, the first clamping member 32 and the second clamping member 33 approach each other to clamp the wafer 40. Subsequently, the rotating mechanism 20 rotates to the first position.
[0076] The lifting mechanism 50 drives the rotating mechanism 20 to move in the vertical direction towards the etching chamber 10 until the distance between the rotation axis of the rotating mechanism 20 and the etching chamber 10 is the second distance, and the second distance is less than the first distance. When the distance between the rotation axis of the rotating mechanism 20 and the etching chamber 10 is the second distance, the rotating mechanism 20 rotates uniformly from the first position to the third position, thereby completing the etching process of the wafer 40.
[0077] When the rotating mechanism 20 moves to the third position, the lifting mechanism 50 drives the rotating mechanism 20 to move in the vertical direction away from the etching chamber 10 until the distance between the rotation axis of the rotating mechanism 20 and the etching chamber 10 is the first distance. Subsequently, the rotating mechanism 20 rotates from the third position to the first position, and the first clamping member 32 and the second clamping member 33 in the clamping mechanism 30 move to the release position, so as to facilitate the transfer manipulator to take out the etched wafer 40 from the carrier 31 and place the wafer 40 to be etched on the carrier 31.
[0078] In some other embodiments of the present application, the driving part in the lifting mechanism 50 is a lifting motor and a lifting lead screw, and the moving part in the lifting mechanism 50 is a lifting lead screw nut. The lifting lead screw nut is threadedly connected to the lifting lead screw, and the driving motor in the rotating mechanism 20 is connected to the lifting lead screw nut. The lifting motor drives the rotating mechanism 20 to approach or move away from the etching chamber 10 in the vertical direction through the lifting lead screw and the lifting lead screw nut.
[0079] The above are only the preferred embodiments of the present application and are not intended to limit the present application. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A wafer etching device, characterized in that: include: An etching chamber containing an etching solution; A rotating mechanism, rotating relative to the etching chamber; A clamping mechanism, connected to the rotating mechanism, for fixing the wafer on the rotating mechanism; The rotating mechanism rotates relative to the etching chamber along a preset rotation direction, so that the wafer rotates around the rotation axis of the rotating mechanism along a preset circular rotation path in a vertical plane to enter and leave the etching solution; at least when the wafer rotates to the lowest point of the rotation path, the wafer is completely immersed in the etching solution.
2. The wafer etching device according to claim 1, characterized in that: The rotating mechanism comprises: Rotating electrical machines; The rotating plate is connected to the rotating part of the rotating motor, and the clamping mechanism is connected to the rotating plate.
3. The wafer etching device according to claim 2, characterized in that: There are two rotating plates, which are spaced apart from each other. The clamping mechanism is located between the two rotating plates, and the two rotating plates have the same direction of rotation and rotation speed.
4. The wafer etching device according to claim 3, characterized in that: The number of the rotating motors is two, and the two rotating motors correspond to the two rotating plates one by one, and each rotating plate is connected to the rotating part of the corresponding rotating motor.
5. The wafer etching device according to claim 4, characterized in that: The clamping mechanism comprises: A carrier, connected between the two rotating plates, and used for supporting the wafer; A first clamping member, slidably connected to the bearing plate; The second clamping member is slidably connected to the supporting plate and clamps the wafer together with the supporting member and the first clamping member.
6. The wafer etching device according to claim 5, characterized in that: The clamping mechanism also includes: A limiting structure is arranged on the carrier, the first clamping member and the second clamping member, and the wafer is fixed in the limiting structure.
7. The wafer etching device according to claim 6, characterized in that: The number of the limiting structures is multiple, and the multiple limiting structures are evenly spaced along the extension direction of the supporting member.
8. The wafer etching device according to claim 7, characterized in that: The limiting structure is a groove structure.
9. The wafer etching device according to claim 8, characterized in that: The number of the carriers is two, the two carriers are arranged at an interval, and the interval between the two carriers is smaller than the diameter of the wafer.
10. The wafer etching device according to claim 1 or 9, characterized in that: Also includes: The lifting mechanism includes a driving part and a moving part connected to the driving part and performing lifting movement relative to the driving part in a vertical direction. The rotating mechanism is connected to the moving part, and the rotating mechanism rotates relative to the moving part around its rotation axis. The driving part is used to drive the rotating mechanism to approach or move away from the etching chamber.