Base and semiconductor processing equipment

Abstract

The present application provides a pedestal and a semiconductor processing apparatus. The pedestal includes a pedestal body, a recess, a driving gas delivery channel, a diversion groove, a gas collection groove, an exhaust port, and an exhaust pipe; the diversion groove is disposed on the bottom surface of the recess, and the diversion groove includes at least one proximal end close to the center of the recess and at least one distal end extending toward the edge of the recess; the gas collection groove is disposed on the bottom surface of the recess and is correspondingly arranged with the distal end to block at least part of the driving gas overflowing from the distal end; the exhaust port is disposed on the bottom surface of the recess and is correspondingly arranged with the distal end and is located within the area surrounded by the outer edge of the gas collection groove; the exhaust pipe is disposed in the pedestal body and is located below the recess, and one end thereof communicates with the exhaust port. The present application can reduce or avoid the adverse effect on the process reaction area above the substrate caused by the driving gas forming the air cushion escaping from the gap between the recess and the substrate while not affecting the rotational driving effect of the air cushion on the substrate, which is beneficial to improving the quality and uniformity of the film formed on the substrate.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and particularly to a pedestal and a semiconductor processing apparatus. Background Art

[0002] The third-generation semiconductors, represented by silicon carbide (SiC) and gallium nitride (GaN), show great potential in high-temperature, high-pressure, high-frequency, high-power and other application scenarios due to their excellent material properties, and are driving changes in the fields of energy, transportation, communication, etc. Such semiconductor materials are usually epitaxially grown on a substrate by a thermal decomposition reaction using semiconductor manufacturing equipment, so as to achieve precise epitaxial control of the quality of each functional layer of the semiconductor device.

[0003] A pedestal is provided inside the semiconductor manufacturing equipment. A substrate is placed in the recess of the pedestal, and a gas injection device above the pedestal provides a crystal growth source material for epitaxial growth on the surface of the substrate. In the prior art, in order to improve the temperature uniformity of the substrate surface and the mixing uniformity of the crystal growth source material near the substrate surface to be beneficial to the film formation quality and uniformity, air channels are usually provided in the pedestal, and diversion grooves are provided on the bottom surface of the recess, so as to introduce a driving gas from the air channels to the diversion grooves to form an air cushion below the substrate, thereby lifting and rotating the substrate.

[0004] Considering the transfer of the substrate from the pedestal after film formation on the substrate surface, there is a gap between the recess and the substrate, and the driving gas will inevitably escape through this gap to the process reaction area above the substrate, which will disrupt the process gas flow field, cause the process gas to be diluted, and thus affect the quality and uniformity of the film formed on the substrate. Summary of the Invention

[0005] The purpose of this application is to provide a pedestal and a semiconductor processing apparatus including the pedestal, which can reduce or avoid the adverse effect on the process reaction area above the substrate caused by the escape of the driving gas forming the air cushion from the gap between the recess and the substrate while not affecting the rotational driving effect of the air cushion on the substrate, thereby being beneficial to improving the quality and uniformity of the film formed on the substrate.

[0006] To achieve the above object, in a first aspect, the base provided in the present application includes a base body, a recess, a driving gas delivery channel, a diversion groove, a gas collection groove, an exhaust port, and an exhaust pipe; the recess is provided on the bearing surface of the base body for bearing a substrate; the driving gas delivery channel is provided in the base body; the diversion groove is provided on the bottom surface of the recess, and the diversion groove includes at least one proximal end close to the center of the recess and at least one distal end extending toward the edge of the recess, and the proximal end communicates with the driving gas delivery channel, so that the driving gas provided by the driving gas delivery channel flows toward the corresponding distal end along the extending direction of the diversion groove to drive the substrate to rotate; the gas collection groove is provided on the bottom surface of the recess and is correspondingly arranged with the distal end to block at least part of the driving gas overflowing from the distal end; the exhaust port is provided on the bottom surface of the recess, is correspondingly arranged with the distal end, and is located within the area surrounded by the outer edge of the gas collection groove, and the outer edge of the gas collection groove is the side edge away from the distal end; the exhaust pipe is provided in the base body, is located below the recess, and one end communicates with the exhaust port.

[0007] Preferably, the diversion groove further includes a diversion section between the proximal end and the corresponding distal end, and the diversion groove extends from the area between the two ends of the gas collection groove into the area surrounded by the gas collection groove, so that a part of the gas collection groove is located between the distal end and the diversion section adjacent to the distal end in the radial direction, and a part is located between the distal end and the bottom surface edge of the recess.

[0008] Preferably, the diversion groove further includes a diversion section between the proximal end and the corresponding distal end. Define an air flow vortex line pointing from the proximal end to the distal end and extending along the spiral direction of the diversion groove. A first tangent circle is tangent to the bottom surface edge of the recess with the end point of the air flow vortex line as the center. When the number of intersection points between the diversion section adjacent to the distal end in the radial direction and the first tangent circle is 0, the gas collection groove is arranged within the area surrounded by the orthographic projection of the first tangent circle on the bottom surface of the recess.

[0009] Preferably, define a second tangent circle tangent to the diversion section adjacent to the distal end in the radial direction with the end point of the air flow vortex line as the center. When the second tangent circle is located within the first tangent circle, the gas collection groove is arranged within the area surrounded by the orthographic projection of the second tangent circle on the bottom surface of the recess.

[0010] Preferably, the radius of the second tangent circle is R. Define a positioning circle with the end point of the air flow vortex line as the center and a radius of 0.5R. The gas collection groove is arranged within the area surrounded by the orthographic projection of the positioning circle on the bottom surface of the recess.

[0011] Preferably, the air flow vortex line is the vortex line of the diversion groove, and the end point of the air flow vortex line is the intersection point of the air flow vortex line and the end face of the distal end portion.

[0012] Preferably, the exhaust duct includes a gas diversion section and an exhaust section that are connected and communicate with each other, and the inner diameter of the gas diversion section is larger than the inner diameter of the exhaust section.

[0013] Preferably, when the gas diversion section is disposed between the exhaust port and the exhaust section, the inner diameter of the gas diversion section decreases in the direction extending toward the exhaust section; when the exhaust section is disposed between the exhaust port and the gas diversion section, the inner diameter of the gas diversion section increases in the direction extending away from the exhaust section.

[0014] Preferably, the ratio of the extension length of the gas diversion section to the extension length of the exhaust section is 1:1.5 to 1:5.

[0015] Preferably, the exhaust duct is parallel to the central axis of the bottom surface of the concave cavity, or is inclined to the bottom surface of the concave cavity and extends toward the bottom of the base.

[0016] Preferably, a first side wall tangent line and a second side wall tangent line that are respectively tangent to the distal end portion and extend away from the distal end portion are defined. The distal end portion is located between the first side wall tangent line and the second side wall tangent line. The region enclosed between the first side wall tangent line and the second side wall tangent line is orthogonally projected onto the bottom surface of the concave cavity to form a first projection region. The exhaust duct is orthogonally projected onto the bottom surface of the concave cavity to form a second projection region, and at least a part of the second projection region is located within the first projection region.

[0017] Preferably, the exhaust port includes an outer exhaust port, and the gas collecting groove is provided with at least one of the outer exhaust ports.

[0018] Preferably, the exhaust port includes an inner exhaust port, and the inner exhaust port is provided at the distal end portion or between the gas collecting groove and the distal end portion.

[0019] Preferably, the exhaust port includes at least one outer exhaust port and at least one inner exhaust port. Each of the outer exhaust ports is disposed in the gas collecting groove, and each of the inner exhaust ports is provided at the distal end portion or between the gas collecting groove and the distal end portion; a virtual air duct on the bottom surface of the concave cavity is defined, and at least one of the outer exhaust ports and at least one of the inner exhaust ports are located on the same virtual air duct.

[0020] Preferably, the base further includes a radial exhaust passage communicating with the exhaust duct, and the virtual air duct is located on the orthogonal projection of the radial exhaust passage on the bottom surface of the concave cavity.

[0021] Preferably, the base further includes a radial exhaust passage communicating with the exhaust duct, and the radial exhaust passage extends toward the middle of the base and / or the edge of the base.

[0022] In a second aspect, the semiconductor processing equipment provided by the present application includes a process chamber and the aforementioned base disposed in the process chamber.

[0023] Both the base of the present application and the semiconductor processing equipment including the base have the following beneficial effects:

[0024] The flow guiding groove disposed at the bottom surface of the recess includes at least one proximal end close to the center of the recess and at least one distal end extending toward the edge of the recess. The proximal end communicates with the driving gas delivery passage. The gas collecting groove is disposed at the bottom surface of the recess and is correspondingly disposed with the distal end to block at least part of the driving gas overflowing from the distal end, so that while not affecting the rotational driving effect of the air cushion on the substrate, the overflow of the driving gas forming the air cushion toward the edge of the recess can be reduced or prevented; in addition, the exhaust port is disposed at the bottom surface of the recess, correspondingly disposed with the distal end, and is located within the region surrounded by the outer edge of the gas collecting groove. One end of the exhaust duct disposed in the base body and below the recess communicates with the exhaust port, so that the driving gas in the flow guiding groove can be discharged from the exhaust port, further reducing the escape of the driving gas. The present application reduces or avoids the problems of disturbing the process gas flow field and diluting the process gas caused by the escape of the driving gas above the substrate, which is beneficial to improving the quality and uniformity of the film formed on the substrate. Description of the Drawings

[0025] Figure 1 It is a schematic structural diagram of the base and the substrate of the embodiment of the present application.

[0026] Figure 2 It is a schematic top view structural diagram of the base of the embodiment of the present application.

[0027] Figure 3 It is a schematic top view structural diagram of the recess in the base of the embodiment of the present application.

[0028] Figure 4 It is for the substrate of the embodiment of the present application and Figure 3 The schematic cross-sectional structural diagram of the shown base along the EE line.

[0029] Figure 5 It is a schematic top view structural diagram of the recess in the base of the embodiment of the present application with one flow guiding groove provided therein.

[0030] Figure 6 It is a schematic top view structural diagram of the recess in the base of the embodiment of the present application with a plurality of flow guiding grooves provided therein.

[0031] Figure 7Schematic cross-sectional structure diagram of the exhaust duct in the base of some embodiments of the present application.

[0032] Figure 8 Schematic cross-sectional structure diagram of the exhaust duct in the base of other embodiments of the present application.

[0033] Figure 9 Schematic cross-sectional structure diagram of the exhaust duct and the exhaust port in the base of an embodiment of the present application.

[0034] Figure 10 Schematic cross-sectional structure diagram of the exhaust duct and the radial exhaust channel in the base of an embodiment of the present application.

[0035] Figure 11 Schematic diagram of the projection structure of the tangent line of the side wall of the diversion groove and the exhaust duct on the bottom surface of the recess in the base of an embodiment of the present application.

[0036] Figure 12 Schematic diagram of the gas flow direction of the driving gas in the exhaust pipe line of an embodiment of the present application.

[0037] Figure 13 Schematic diagram of the gas flow direction of the driving gas in the tail exhaust pipe line of an embodiment of the present application.

[0038] Figure 14 Schematic structure diagram of the first tangent circle in the base of an embodiment of the present application.

[0039] Figure 15 Schematic structure diagram of the second tangent circle in the base of an embodiment of the present application.

[0040] Figure 16 Schematic structure diagram of the positioning circle in the base of an embodiment of the present application.

[0041] Figure 17 Schematic structure diagram of the gas collecting groove and the exhaust port in the base of some embodiments of the present application.

[0042] Figure 18 Schematic structure diagram of the gas collecting groove and the exhaust port in the base of other embodiments of the present application.

[0043] Figure 19 Schematic structure diagram of the exhaust port and the virtual air passage in the base of some embodiments of the present application.

[0044] Figure 20 Schematic structure diagram of the exhaust port and the virtual air passage in the base of other embodiments of the present application.

[0045] Figure 21 Schematic structure diagram of the semiconductor processing equipment of an embodiment of the present application.

[0046] Among them, the reference numerals are respectively:

[0047] 100, base body; 101, outer side wall; 1011, gas discharge port; 102, inner side wall; 1021, exhaust hole; 200, substrate; 300, rotary drive device; 301, exhaust pipe; 400, tail exhaust pipe; 500, top plate; 600, gas injection device;

[0048] 10, gap;

[0049] 110, recess; 111, bottom surface of recess; 1111, first quadrant area; 1112, second quadrant area; 1113, third quadrant area; 1114, fourth quadrant area; 112, central axis; 113, edge of recess;

[0050] 120, flow guiding groove; 1201, first flow guiding groove; 1202, second flow guiding groove; 1203, third flow guiding groove; 121, air flow vortex line; 122, end point; 123, proximal end; 124, distal end; 125, first projection area; 1251, first side wall tangent line; 1252, second side wall tangent line; 126, vortex line tangent line; 127, vortex line perpendicular line;

[0051] 130, exhaust pipe; 131, gas diversion section; 1311, first extension line; 132, exhaust section; 1321, second extension line; 134, second projection area;

[0052] 140, gas collecting groove;

[0053] 150, driving gas delivery channel; 151, air inlet;

[0054] 160, exhaust port; 1601, first exhaust port; 1602, second exhaust port; 1603, third exhaust port; 161, inner exhaust port; 162, outer exhaust port;

[0055] 170, radial exhaust channel;

[0056] 181, first tangent circle; 182, second tangent circle; 183, positioning circle;

[0057] 190, virtual air passage; 191, first virtual air passage; 192, second virtual air passage. Detailed implementation mode

[0058] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below. Apparently, the described embodiments are some, but not all, of the embodiments of this application. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in this application without creative efforts shall fall within the scope of protection of this application. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings as understood by those of ordinary skill in the art to which this application pertains. The words such as "including" used herein are intended to mean that the elements or items appearing before this word cover the elements or items listed after this word and their equivalents, without excluding other elements or items.

[0059] To overcome the problems existing in the prior art, the embodiments of this application provide a base and a semiconductor processing device, which can reduce or avoid the adverse effects on the process reaction area above the substrate caused by the escape of the driving gas forming the air cushion from the gap between the concave cavity and the substrate while not affecting the rotational driving effect of the air cushion on the substrate, thereby being beneficial to improving the quality and uniformity of the film formed on the substrate.

[0060] In some embodiments, referring to Figures 1 to 4 , the base includes a base body 100, a concave cavity 110, a diversion groove 120, an exhaust duct 130, a gas collecting groove 140, a driving gas delivery channel 150, and an exhaust port 160; the concave cavity 110 is provided on the bearing surface of the base body 100 for bearing a substrate 200; the driving gas delivery channel 150 is provided in the base body 100; the diversion groove 120 is disposed on the bottom surface of the concave cavity 110, and the diversion groove 120 includes at least one proximal end portion 123 close to the center of the concave cavity 110 and at least one distal end portion 124 extending toward the edge of the concave cavity 110, the proximal end portion 123 communicates with the driving gas delivery channel 150, so that the driving gas provided by the driving gas delivery channel 150 flows toward the corresponding distal end portion 124 along the extending direction of the diversion groove 120 to drive the rotation of the substrate; the gas collecting groove 140 is disposed on the bottom surface of the concave cavity 110 and is correspondingly arranged with the distal end portion 124 to block at least part of the driving gas escaping from the distal end portion 124; the exhaust port 160 is disposed on the bottom surface of the concave cavity 110 and is correspondingly arranged with the distal end portion 124, the exhaust port 160 is located within the area surrounded by the outer edge of the gas collecting groove 140, and the outer edge of the gas collecting groove 140 is the side edge away from the distal end portion 124; the exhaust duct 130 is provided in the base body 100 and is located below the concave cavity 110, and one end of the exhaust duct 130 communicates with the exhaust port 160.

[0061] In this embodiment, the flow guiding groove 120 provided on the bottom surface of the concave cavity 110 includes at least one proximal end portion 123 close to the center of the concave cavity and at least one distal end portion 124 extending toward the edge of the concave cavity. The proximal end portion 123 communicates with the driving gas delivery channel 150. The gas collecting groove 140 is provided on the bottom surface of the concave cavity 110 and is correspondingly arranged with the distal end portion 124 to block at least part of the driving gas overflowing from the distal end portion 124, so that while not affecting the rotational driving effect of the air cushion on the substrate, the overflow of the driving gas forming the air cushion toward the edge of the concave cavity can be reduced or blocked; in addition, the exhaust port 160 is provided on the bottom surface of the concave cavity 110, is correspondingly arranged with the distal end portion 124, and is located within the area surrounded by the outer edge of the gas collecting groove 140. One end of the exhaust duct 130 provided on the base body 100 and located below the concave cavity 110 communicates with the exhaust port 160, so that the driving gas in the flow guiding groove 120 can be discharged from the exhaust port 160, further reducing the escape of the driving gas. This application reduces or avoids the problem that the driving gas escapes from the gap 10 between the concave cavity and the substrate to above the substrate 200, disturbing the process gas flow field and causing the process gas to be diluted, which is beneficial to improving the quality and uniformity of the film formed on the substrate 200.

[0062] In some embodiments, Figure 1 The shown substrate 200 may also be a substrate holder, and a plurality of holder concave cavities are formed on the substrate holder for carrying each substrate. The driving gas enters the flow guiding groove 120 through the driving gas delivery channel 150 and flows along the flow guiding groove 120 to form an air cushion capable of supporting the substrate holder. The substrate holder rotates around the central axis of the bottom surface 111 of the concave cavity under the floating of the driving gas, thereby driving each substrate to rotate synchronously.

[0063] In some embodiments, at least one concave cavity 110 is provided. For example, a plurality of concave cavities 110 may be provided, and of course, one concave cavity 110 may also be provided. The specific number is set according to the type, use, and process requirements of the semiconductor processing equipment. For example, in some embodiments, 5 concave cavities 110 are provided, as Figure 1 shown. In some other embodiments, 6 concave cavities 110 are provided, as Figure 2 shown.

[0064] In some embodiments, at least 1 flow guiding groove 120 is provided, and the flow guiding grooves 120 are arranged in a spiral shape around the center of the bottom surface 111 of the concave cavity.

[0065] The diversion channels 120 can be provided with one or several, and the specific number is set according to the type, use and process requirements of the semiconductor processing equipment. Their shapes, sizes and arrangements can be correspondingly selected according to the process requirements, so as to enable the driving gas entering the diversion channels 120 at a certain rate to flow in the diversion channels 120 to form an air cushion, so that the substrate 200 above it can achieve air floating and stable rotation, which is necessary. The specific implementation method is a conventional technical means in the art. For example, in some embodiments, three of the diversion channels 120 are provided on the bottom surface 111 of the cavity of the cavity 110, as shown in Figure 2 and Figure 3 shown. In other embodiments, one or several of the diversion channels 120 are provided on the bottom surface 111 of the cavity of the cavity 110, as shown in Figure 5 and Figure 6 shown.

[0066] In some embodiments, referring to Figures 1 to 3 and Figure 6 , at least two of the diversion channels 120 are provided, and the proximal ends 123 of at least two of the diversion channels 120 are circumferentially and uniformly distributed around the center of the bottom surface 111 of the cavity, and the distal ends 124 of at least two of the diversion channels 120 are circumferentially and uniformly distributed around the center of the bottom surface 111 of the cavity.

[0067] In some embodiments, referring to Figure 3 , the base further includes an air inlet 151 communicated with the driving gas delivery channel 150. The air inlet 151 is arranged on the bottom surface of the cavity 110, specifically, arranged at the proximal end 123, for delivering the driving gas into the diversion channels 120.

[0068] In some embodiments, referring to Figure 4 and Figures 7 to 10 , the exhaust duct 130 includes a gas diversion section 131 and an exhaust section 132 that are communicated with each other. The inner diameter of the gas diversion section 131 is larger than the inner diameter of the exhaust section 132, so as to increase the exhaust area of the driving gas, reduce the flow resistance of the driving gas, improve the exhaust streamline, thereby facilitating the increase of the gas exhaust velocity, reducing or avoiding the problem of disturbing the process gas flow field and diluting the process gas due to the escape of the driving gas to the upper part of the substrate, and being beneficial to improving the quality and uniformity of the film formed on the substrate.

[0069] In some embodiments, referring to Figure 4 and Figure 9, when the gas diversion section 131 is disposed between the exhaust port 160 and the exhaust section 132, that is, one end of the gas diversion section 131 communicates with the exhaust port 160 and the other end communicates with the exhaust section 132, and the inner diameter of the gas diversion section 131 decreases along the direction extending towards the exhaust section 132, the exhaust area of the exhaust pipe 130 near the exhaust port 160 is increased, so that the flow resistance of the driving gas can be further reduced, the exhaust streamline is improved, which is beneficial to increasing the discharge velocity of the driving gas at the exhaust port 160, reducing or avoiding the problem that the driving gas escapes above the substrate to disturb the process gas flow field and cause the process gas to be diluted, and is beneficial to improving the quality and uniformity of the film formed on the substrate.

[0070] In some other embodiments, referring to Figure 7 and Figure 8 , when the exhaust section 132 is disposed between the exhaust port 160 and the gas diversion section 131, the inner diameter of the gas diversion section 131 increases along the direction extending away from the exhaust section 132, which is beneficial to reducing the exhaust flow resistance.

[0071] In some specific embodiments, the gas diversion section 131 has a frustum-shaped structure, i.e., a horn-shaped structure, as Figure 4 , Figures 7 to 10 shown, so that the exhaust flow resistance of the driving gas can be further reduced.

[0072] In some embodiments, the ratio of the extension length of the gas diversion section 131 to the extension length of the exhaust section 132 is 1:1.5 to 1:5. Due to the gas flow field formed during the process that the process gas ejected from above the base passes through the base and is discharged from the bottom of the chamber, a negative pressure zone is formed in the space below the base compared to the space above the base, thereby having a certain suction effect on the gas in the exhaust pipe 130 passing through the bottom of the base. As the thickness of the base body 100 increases, the flow path of the exhaust pipe 130 extends, and the suction effect will weaken, which is not conducive to the smooth discharge of the gas in the exhaust pipe 130 relying on this negative pressure effect. By setting the ratio of the extension length of the gas diversion section 131 to the extension length of the exhaust section 132 to be 1:1.5 to 1:5, and combined with the variable diameter setting of the gas diversion section 131, it is beneficial to reduce the flow resistance of the driving gas discharge, that is, the pressure difference between the pressure at the end of the exhaust pipe 130 connected to the exhaust port 160 and the pressure at the end of the exhaust pipe 130 far from the exhaust port 160 is greater than 0, and the velocity of the gas flowing out of the exhaust pipe 130 is greater than 0, thus being beneficial to the discharge of the driving gas; the longer the extension length of the gas diversion section 131, the more beneficial it is to reduce the flow resistance, but if the extension length of the gas diversion section 131 is too long, it will affect the exhaust flow resistance.

[0073] In some specific embodiments, the ratio of the extension length of the gas drainage section 131 to the extension length of the exhaust section 132 is 1:1.5, 1:2, 1:2.5, 1:3, 1:3.3, 1:3.7, 1:4 or 1:5.

[0074] In some embodiments, referring to Figure 4 , the exhaust duct 130 is parallel to the central axis 112 of the bottom surface of the recess 110. That is, the extending direction of the exhaust duct 130 is parallel to the central axis 112 perpendicular to the bottom surface 111 of the recess.

[0075] In some other embodiments, referring to Figure 7 , the exhaust duct 130 is inclined to the bottom surface of the recess 110 and extends towards the bottom of the base. Specifically, the inclination direction of the exhaust duct 130 is set according to the extending direction of the virtual extension part of the distal end 124 of the flow guiding groove 120, so that the air flow in the flow guiding groove 120 can flow into the exhaust duct 130 along the extending direction of the virtual extension part of the distal end 124 to reduce the exhaust flow resistance. For example, in some specific embodiments, referring to Figure 3 , the virtual extension part of the distal end 124 of the flow guiding groove 120 extends towards the area where the central axis 112 is located, the exhaust duct 130 is inclined to the bottom surface of the recess 110, and the end part of the exhaust duct 130 far from the bottom surface 111 of the recess extends towards the central axis 112. In some other specific embodiments, referring to Figure 6 and Figure 11 , when the virtual extension part of the distal end 124 of the flow guiding groove 120 extends towards the recess edge 113 of the recess 110, the exhaust duct 130 is inclined to the bottom surface of the recess 110, and the end part of the exhaust duct 130 far from the bottom surface 111 of the recess extends towards the recess edge 113. This is beneficial to reducing the gas exhaust flow resistance and reducing or avoiding the driving gas from escaping to the process reaction area above the substrate.

[0076] Since the driving gas needs to exhaust downward through the exhaust duct 130 after entering the exhaust duct 130 from the exhaust port 160, if the extending direction of the exhaust duct 130 changes too much compared with the air flow direction before the driving gas enters the exhaust port 160, such as a large deviation in the flow direction, it will significantly increase the exhaust flow resistance. To reduce the exhaust flow resistance, in some embodiments, referring to Figure 11, a first sidewall tangent line 1251 and a second sidewall tangent line 1252 are defined which are respectively tangent to the distal end portion 124 and extend away from the distal end portion 124. The distal end portion 124 is located between the first sidewall tangent line 1251 and the second sidewall tangent line 1252. The region enclosed between the first sidewall tangent line 1251 and the second sidewall tangent line 1252 is orthogonally projected onto the bottom surface of the recess 110 to form a first projection region 125. The exhaust duct 130 is orthogonally projected onto the bottom surface of the recess 110 to form a second projection region 134. At least a part of the second projection region 134 is located within the first projection region 125.

[0077] In this embodiment, the first sidewall tangent line 1251 and the second sidewall tangent line 1252 extend in a direction away from the distal end portion 124, that is, the first sidewall tangent line 1251 and the second sidewall tangent line 1252 extend along the direction in which the air flow rushes out of the diversion groove 120. Among them, the first sidewall tangent line 1251 and the second sidewall tangent line 1252 are the orthogonal projections of the tangent lines where the two sidewalls of the diversion groove 120 along the extension direction of the diversion groove are respectively tangent to the distal end portion 124 on the bottom surface 111 of the recess.

[0078] In some embodiments, at least a part of the second projection region 134 includes the projection region formed by the orthogonal projection of the section of the exhaust duct 130 near the exhaust port 160 onto the bottom surface 111 of the recess. The projection region formed by the orthogonal projection of the section of the exhaust duct 130 near the exhaust port 160 onto the bottom surface 111 of the recess is located within the first projection region 125, which can prevent the driving gas from flowing into the exhaust duct 130 from the exhaust port 160 and then having a large deviation in flow direction, reducing the flow resistance of the exhaust.

[0079] In some embodiments, the entire second projection region 134 is located within the first projection region 125, reducing the deviation of the flow direction of the driving gas after it enters the exhaust duct 130 from the exhaust port 160, which is beneficial to reducing the flow resistance of the exhaust.

[0080] In some embodiments, refer to Figure 7 and Figure 8, the exhaust duct 130 includes a gas diversion section 131 and an exhaust section 132 that are connected and communicate with each other. The exhaust section 132 is located between the exhaust port 160 and the gas diversion section 131. At least one of the gas diversion section 131 and the exhaust section 132 is parallel to the central axis of the bottom surface of the recess 110, or is inclined to the bottom surface of the recess 110 and extends toward the central axis of the bottom of the base. That is, the angle a formed by the first extension line 1311 of the axis of the gas diversion section 131 in the direction away from the bottom surface 111 of the recess and the central axis 112 is greater than or equal to 0; and / or the angle b formed by the second extension line 1321 of the axis of the exhaust section 132 in the direction away from the bottom surface 111 of the recess and the central axis 112 is greater than or equal to 0. This can make the angle at which the driving gas near the edge of the bottom surface of the recess enters the exhaust duct 130 from the exhaust port 160 greater than or equal to 90 degrees, thereby facilitating the reduction or avoidance of problems such as the driving gas escaping above the substrate and disturbing the process gas flow field and causing the process gas to be diluted, and is conducive to improving the quality and uniformity of the film formed on the substrate.

[0081] In some specific embodiments, referring to Figure 4 , both the gas diversion section 131 and the exhaust section 132 are parallel to the central axis 112 of the bottom surface of the recess 110, that is, the angle a formed by the first extension line 1311 and the central axis 112 is equal to 0; the angle b formed by the second extension line 1321 and the central axis 112 is equal to 0.

[0082] In some other specific embodiments, referring to Figure 7 , both the gas diversion section 131 and the exhaust section 132 are inclined to the bottom surface of the recess 110 and extend toward the central axis 112 of the bottom of the base, that is, the angle a formed by the first extension line 1311 and the central axis 112 is greater than 0; the angle b formed by the second extension line 1321 and the central axis 112 is greater than 0.

[0083] In still some other specific embodiments, referring to Figure 8 and Figure 10 , the gas diversion section 131 is parallel to the central axis 112 of the bottom surface of the recess 110, and the exhaust section 132 is inclined to the bottom surface of the recess 110 and extends toward the central axis 112 of the bottom of the base, that is, the angle a formed by the first extension line 1311 and the central axis 112 is equal to 0; the angle b formed by the second extension line 1321 and the central axis 112 is greater than 0.

[0084] In some embodiments, the axes of the gas diversion section 131 and the exhaust section 132 are not coaxially arranged, such asFigure 7 , Figure 8 and Figure 10 as shown. In some other embodiments, the tube axis of the gas diversion section 131 is coaxially arranged with the tube axis of the exhaust section 132, as shown in Figure 4 and Figure 9 . Specifically, it is set according to the actual preparation process conditions of the base, the exhaust requirements, and the substrate preparation process requirements. In some specific embodiments, referring to Figure 8 , the tube axis of the gas diversion section 131 is non - coaxially arranged with the tube axis of the exhaust section 132, and one side wall of the gas diversion section 131 extends in the same direction as one side wall of the exhaust section 132. In some other specific embodiments, referring to Figure 7 and Figure 10 , the tube axis of the gas diversion section 131 is non - coaxially arranged with the tube axis of the exhaust section 132, and the two side walls of the gas diversion section 131 extend in different directions from the two side walls of the exhaust section 132.

[0085] In some embodiments, referring to Figure 10 , the base further includes a radial exhaust passage 170 communicating with the exhaust duct 130. The radial exhaust passage 170 extends towards the middle of the base body 100 and is adaptively arranged corresponding to the rotation driving device provided in the middle of the base body 100.

[0086] In some embodiments, the radial exhaust passage 170 extends towards the edge of the base body 100 and is adaptively arranged corresponding to the rotation driving device provided at the edge of the base body 100.

[0087] In some embodiments, a rotation driving device is provided in the middle of the base body 100, or a rotation driving device is provided on the side wall of the base body 100. The radial exhaust passage 170 enters the rotation driving device through the joint of the rotation driving device and the base body 100 and extends inside the rotation driving device to the outside of the process chamber. In this case, an air extraction device, such as a vacuum pump, is provided outside the process chamber to extract air from the opening of the radial exhaust passage outside the process chamber, and the suction force on the driving gas can be flexibly adjusted and controlled. In some embodiments, referring to Figure 1 , Figure 12 and Figure 13 , the radial exhaust passage 170 extends towards the middle of the base body 100 and penetrates the inner side wall 102 of the base body 100. In some specific embodiments, the radial exhaust passage 170 is communicated with the exhaust pipe 301 in the rotary shaft sleeve through the exhaust hole 1021 located on the inner side wall 102, as shown in Figure 12 . In some embodiments, referring to Figure 1, the radial exhaust passage 170 extends toward the edge of the base body 100 and penetrates through the outer sidewall 101 of the base body 100. The gas discharge port 1011 of the radial exhaust passage 170 on the outer sidewall 101 is closer to the air extraction pump, resulting in a better exhaust effect.

[0088] In some embodiments, the other end of the radial exhaust passage 170 is open near the exhaust port at the bottom of the process chamber, and the driving gas is discharged by using the suction force formed under the base by the tail exhaust pipeline of the process chamber. In some specific embodiments, the radial exhaust passage 170 communicates with the tail exhaust pipeline 400 through the exhaust holes 1021 located on the inner sidewall 102, as Figure 13 shown.

[0089] In some embodiments, referring to Figure 2 and Figure 3 , the diversion groove 120 further includes a diversion section located between the proximal end portion 123 and the corresponding distal end portion 124. The diversion groove 120 extends from the area between the two end portions of the gas collection groove 140 into the area surrounded by the gas collection groove 140, which is beneficial to improving the exhaust effect of the driving gas, thereby reducing the escape of the driving gas. A part of the gas collection groove 140 is located between the distal end portion 124 and the diversion section adjacent to the distal end portion 124 in the radial direction, reducing or preventing the driving gas from overflowing toward the diversion section adjacent to the distal end portion 124 in the radial direction, and avoiding interference with the driving gas in the diversion section adjacent to the distal end portion 124 in the radial direction; A part of the gas collection groove 140 is located between the distal end portion 124 and the bottom edge of the recess 110, thereby reducing or preventing the driving gas from overflowing toward the bottom edge of the recess 110.

[0090] In the embodiments of the present application, the diversion section adjacent to the distal end portion 124 in the radial direction is the diversion section closest to the distal end portion 124 of the diversion groove 120. Since the diversion groove 120 is arranged in a spiral shape around the center of the bottom surface of the recess 111, the diversion section adjacent to the distal end portion 124 in the radial direction can be the diversion section of the diversion groove 120 itself or the diversion section of other diversion grooves 120. As Figure 5 shown, when there is 1 diversion groove 120 on the bottom surface 111 of the recess 110, the diversion section adjacent to the distal end portion 124 in the radial direction is the diversion section of the diversion groove 120 itself that is closer to the distal end portion 124. As Figure 3As shown, when three flow guiding grooves 120 are provided on the bottom surface 111 of the cavity 110 of the cavity, namely a first flow guiding groove 1201, a second flow guiding groove 1202, and a third flow guiding groove 1203 respectively, the flow guiding section of the first flow guiding groove 1201 adjacent to the distal end portion 124 in the radial direction is the flow guiding section of the second flow guiding groove 1202 that is closer to the distal end portion 124 of the first flow guiding groove 1201.

[0091] In some embodiments, referring to Figure 14 , the flow guiding groove 120 further includes a flow guiding section located between the proximal end portion 123 and the corresponding distal end portion 124. An air flow vortex line 121 is defined that points from the proximal end portion 123 to the distal end portion 124 and extends along the spiral direction of the flow guiding groove 120. A first tangent circle 181 is centered at the end point 122 of the air flow vortex line 121 and is tangent to the bottom edge of the cavity 110. When the number of intersection points between the flow guiding section adjacent to the distal end portion 124 in the radial direction and the first tangent circle 181 is 0, the air collecting groove 140 is arranged within the area surrounded by the orthographic projection of the first tangent circle 181 on the bottom surface 111 of the cavity. This is beneficial for reducing or avoiding the problem of the driving gas escaping above the substrate and disturbing the process gas flow field and diluting the process gas, and is beneficial for improving the quality and uniformity of the film formed on the substrate.

[0092] In some embodiments, referring to Figures 14 to 16 , the air flow vortex line 121 is the vortex line of the flow guiding groove 120. Specifically, the air flow vortex line 121 is the orthographic projection of the vortex line of the flow guiding groove 120 on the bottom surface of the cavity 110.

[0093] In this embodiment, the vortex line of the flow guiding groove 120 refers to the characteristic line extending from the proximal end portion 123 to the distal end portion 124 of the flow guiding groove 120 along the extending direction of the flow guiding groove 120. In some specific embodiments, as Figure 5 shown, the flow guiding groove 120 is spiral, and its vortex line is its spiral line. In some specific embodiments, the flow guiding groove 120 is linear, and its vortex line is a straight line.

[0094] In this embodiment, there are several vortex lines of the flow guiding groove 120, and they all extend along the extending direction of the flow guiding groove 120. The several vortex lines of the flow guiding groove 120 are arranged in parallel within the flow guiding groove 120. The air flow vortex line 121 can be Figure 14 any one of the several vortex lines of the flow guiding groove 120 shown, and is specifically selected according to the requirements of the process for the air cushion. In some embodiments, the air flow vortex line 121 is the orthographic projection of the central axis of the flow guiding groove 120 pointing from the proximal end portion 123 to the distal end portion 124 on the bottom surface of the cavity 110, as Figure 15 and Figure 16 shown.

[0095] In some embodiments, the end point 122 of the air flow vortex line 121 is the intersection point of the air flow vortex line 121 and the end face of the far end portion 124.

[0096] In this embodiment, since there are several vortex lines in the flow guiding groove 120, there are also several intersection points of the air flow vortex line 121 and the end face of the far end portion 124, that is, the end points 122, and there are also several first tangent circles 181 with the end points 122 as the centers. Any one of the several vortex lines in the flow guiding groove 120 is specifically selected as the air flow vortex line 121 according to the requirements of the process for the air cushion, so as to define the specific position of the first tangent circle 181.

[0097] In some embodiments, with reference to Figure 15 , a second tangent circle 182 is defined with the end point 122 of the air flow vortex line 121 as the center and tangent to the flow guiding section adjacent to the far end portion 124 in the radial direction. When the second tangent circle 182 is located inside the first tangent circle 181, the air collecting groove 140 is arranged in the area surrounded by the orthographic projection of the second tangent circle 182 on the bottom surface 111 of the concave cavity. It reduces or prevents the driving gas from overflowing towards the flow guiding section adjacent to the far end portion 124 in the radial direction, avoids interfering with the driving gas in the flow guiding section adjacent to the far end portion 124 in the radial direction, and enables the gas flowing in each flow guiding groove 120 to be discharged from the exhaust port 160 in the area surrounded by the outer edge of its corresponding air collecting groove 140, avoiding the influence of the driving gas being attracted by the exhaust port 160 in the area surrounded by the outer edge of the air collecting groove 140 corresponding to other flow guiding grooves 120 and resulting in a reduction in the air floating rotation effect.

[0098] The setting method of the position where the air collecting groove 140 of the present invention is located can ensure that the corresponding flow guiding groove 120 has a driving air flow path as long as possible (to ensure the air floating rotation effect). At the same time, since the exhaust port 160 in the area surrounded by the outer edge of the air collecting groove 140 is far from other areas of the flow guiding groove 120, such as the middle area of the flow guiding groove 120, etc., the flow guiding groove 120 can maximize the good air floating effect. For the setting method of setting the exhaust port close to the middle area of the flow guiding groove 120, this setting method makes the gas in other areas of the flow guiding groove 120 easily extracted by the exhaust port 160, thereby affecting the air floating rotation effect.

[0099] In some specific embodiments, the flow guiding groove 120 includes a first flow guiding groove and a second flow guiding groove. The air flow vortex lines 121 of the first flow guiding groove include a first air flow vortex line, a second air flow vortex line, and a third air flow vortex line. The end points 122 of the first air flow vortex line, the second air flow vortex line, and the third air flow vortex line on the end face of the far end portion 124 are respectively a first end point, a second end point, and a third end point. Taking the first end point as the center and the distance between the first end point and the flow guiding section of the second flow guiding groove as the radius, a second tangent circle A is formed; taking the second end point as the center and the distance between the second end point and the flow guiding section of the second flow guiding groove as the radius, a second tangent circle B is formed; taking the third end point as the center and the distance between the third end point and the flow guiding section of the second flow guiding groove as the radius, a second tangent circle C is formed. Then, according to the requirements of the process for the air cushion, the air collecting groove 140 can be selected to be arranged within any one of the second tangent circles A, B, and C.

[0100] In some other embodiments, referring to Figure 16 , the radius of the second tangent circle 182 is R. A positioning circle 183 is defined with the end point 122 of the air flow vortex line 121 as the center and 0.5R as the radius. The air collecting groove 140 is arranged within the area surrounded by the orthographic projection of the positioning circle 183 on the bottom surface 111 of the concave cavity. This can ensure that the flow guiding groove 120 corresponding to the exhaust port 160 has a driving air flow path as long as possible, thereby ensuring the air floating rotation effect while ensuring the exhaust effect and reducing the influence on the driving gas in the adjacent flow guiding groove 120.

[0101] In some embodiments, referring to Figure 16, a vortex line tangent 126 is defined that passes through the end point 122, is tangent to the air flow vortex line 121, and is orthogonally projected onto the bottom surface 111 of the concave cavity, and a vortex line perpendicular 127 is defined that passes through the end point 122, is perpendicular to the vortex line tangent 126, and is orthogonally projected onto the bottom surface 111 of the concave cavity. The vortex line tangent 126 and the vortex line perpendicular 127 divide the bottom surface 111 of the concave cavity into a first quadrant region 1111, a second quadrant region 1112, a third quadrant region 1113, and a fourth quadrant region 1114. And the first quadrant region 1111 and the second quadrant region 1112 are located on one side of the vortex line tangent 126 close to the edge of the concave cavity 110, the third quadrant region 1113 and the fourth quadrant region 1114 are located on one side of the vortex line tangent 126 far from the edge of the concave cavity 110, and the first quadrant region 1111 and the fourth quadrant region 1114 are located on one side of the vortex line perpendicular 127 far from the distal end portion 124; the air collecting groove 140 is located in the first quadrant region 1111 and / or the fourth quadrant region 1114. This can ensure that the guiding groove 120 corresponding to the exhaust port 160 has a driving air flow path as long as possible, thereby ensuring the air floating rotation effect while ensuring the exhaust effect, and reducing the influence on the driving air flow in the adjacent guiding groove 120.

[0102] In some specific embodiments, referring to Figure 16 , the positioning circle 183 is divided into four sector regions by the vortex line tangent 126 and the vortex line perpendicular 127. The two sector regions set far from the distal end portion 124 are respectively located in the first quadrant region 1111 and the fourth quadrant region 1114. The air collecting groove 140 is located in at least one of the two sector regions far from the distal end portion 124.

[0103] In some embodiments, referring to Figure 3 、 Figure 14 、 Figure 15 、 Figure 17 and Figure 18 , the exhaust port 160 includes an inner exhaust port 161, and the inner exhaust port 161 is provided at the distal end portion, or between the air collecting groove 140 and the distal end portion 124. This improves the exhaust effect of the driving gas, thereby reducing the escape of the driving gas, so as to reduce or avoid the problem of disturbing the process gas flow field and diluting the process gas due to the escape of the driving gas above the substrate, which is beneficial to improving the quality and uniformity of the film formed on the substrate, and can ensure that the guiding groove 120 corresponding to the inner exhaust port 161 has a driving air flow path as long as possible, thereby ensuring the air floating rotation effect of the substrate 200.

[0104] In some other embodiments, referring to Figure 3 、 Figures 14 to 18, the exhaust port 160 includes an outer exhaust port 162, and at least one of the outer exhaust ports 162 is provided in the gas collecting groove 140. This can prevent the driving gas from escaping, enabling the driving gas to be discharged from the exhaust port 160 while further improving the exhaust efficiency; moreover, it can ensure that the flow guiding groove 120 corresponding to the outer exhaust port 162 has a driving gas flow path as long as possible, thereby ensuring the air-floating rotation effect of the substrate 200.

[0105] In some specific embodiments, referring to Figure 3 , Figure 14 , Figure 15 , Figure 17 , the exhaust port 160 includes an inner exhaust port 161 and an outer exhaust port 162. The inner exhaust port 161 is provided at the distal end portion 124, and a plurality of the outer exhaust ports 162 are provided in the gas collecting groove 140. And the plurality of outer exhaust ports 162 are evenly distributed in the gas collecting groove 140.

[0106] In some other specific embodiments, the exhaust port 160 only includes the outer exhaust port 162, and one or two of the outer exhaust ports 162 are provided in the gas collecting groove 140, as shown in Figure 11 and Figure 16 respectively.

[0107] In still some other specific embodiments, referring to Figure 18 , the exhaust port 160 includes an inner exhaust port 161 and an outer exhaust port 162. The inner exhaust port 161 is provided between the gas collecting groove 140 and the distal end portion 124, and a plurality of the outer exhaust ports 162 are provided in the gas collecting groove 140.

[0108] In some embodiments, the exhaust port 160 includes but is not limited to at least one of a circular structure, an arc structure, a fan-shaped structure, and a square structure. For example, in some specific embodiments, referring to Figure 3 , Figures 14 to 18 , the exhaust port 160 has a circular exhaust hole structure. In some other specific embodiments, the exhaust port 160 has an arc structure and is arranged around the distal end portion 124 along a certain arc. In some embodiments, as shown in Figure 9As shown, three possible structures of the exhaust port 160 and the arrangement of the exhaust port 160 and the exhaust duct 130 are shown, such as the first exhaust port 1601, the second exhaust port 1602, and the third exhaust port 1603 respectively; among them, the exhaust port 160 can be a circular structure, as shown in the first exhaust port 1601 and the third exhaust port 1603, or a frustum-shaped structure, as shown in the second exhaust port 1602; the inner diameter of the end of the exhaust duct 130 connected to the exhaust port 160 can be equal to the inner diameter of the exhaust port 160, such as the inner diameter of the end of the exhaust duct 130 connected to the exhaust port 160 is equal to the inner diameter of the third exhaust port 1603; the inner diameter of the end of the exhaust duct 130 connected to the exhaust port 160 can also be smaller than the inner diameter of the exhaust port 160, such as the inner diameter of the end of the exhaust duct 130 connected to the exhaust port 160 is smaller than the inner diameter of the first exhaust port 1601; the inner diameter of the second exhaust port 1602 decreases along the direction extending towards the exhaust duct 130, and the inner diameter of the end of the exhaust duct 130 connected to the exhaust port 160 is equal to the inner diameter of the end of the second exhaust port 1602 connected to the exhaust duct 130.

[0109] In some embodiments, referring to Figure 3 and Figures 14 to 18 , the air collecting groove 140 is composed of at least 1 arc-shaped structure.

[0110] In some specific embodiments, referring to Figure 3 and Figure 14 and Figure 15 and Figure 18 , the air collecting groove 140 is composed of 1 arc-shaped structure, the air collecting groove 140 is in an annular structure with an opening, the diversion groove 120 extends from the opening into the annular structure, and the air collecting groove 140 is arranged around the far end 124 of all the diversion grooves 120.

[0111] In some specific embodiments, referring to Figure 17 , the air collecting groove 140 is composed of at least 2 arc-shaped structures. Specifically, the at least 2 arc-shaped structures are sequentially connected or spaced in a ring along the circumferential direction around the far end 124 of the diversion groove 120.

[0112] In some embodiments, referring to Figure 19 and Figure 20, the exhaust port 160 includes at least one outer exhaust port 162 and at least one inner exhaust port 161. Each of the outer exhaust ports 162 is disposed in the air collecting groove 140, and each of the inner exhaust ports 161 is disposed at the distal end portion 124 or between the air collecting groove 140 and the distal end portion 124. Define a virtual air passage 190 on the bottom surface 111 of the recess. At least one of the outer exhaust ports 162 and at least one of the inner exhaust ports 161 are located on the same virtual air passage 190, and the exhaust control of multiple exhaust ports can be realized by using the same radial exhaust passage 170.

[0113] In some embodiments, the virtual air passage 190 is located on the orthographic projection of the radial exhaust passage 170 on the bottom surface 111 of the recess, and the exhaust control of multiple exhaust ports can be realized by using the same radial exhaust passage 170.

[0114] In some embodiments, referring to Figure 19 , at least one of the outer exhaust ports 162 provided in the same diversion groove 120 and at least one of the inner exhaust ports 161 corresponding to the diversion groove 120 are located on the same virtual air passage 190, specifically, they are communicated with the radial exhaust passage 170 extending along the same radial direction, and the exhaust control of multiple exhaust ports can be realized by using the same radial exhaust passage 170.

[0115] Further, each of the outer exhaust ports 162 and each of the inner exhaust ports 161 corresponding to the same diversion groove 120 are communicated with the radial exhaust passage 170 extending along the same radial direction. That is, each of the outer exhaust ports 162 and each of the inner exhaust ports 161 are both communicated with the same radial exhaust passage 170 after passing through the exhaust duct 130 shown in Figure 10 .

[0116] In this embodiment, at least one of the outer exhaust ports 162 provided in the same diversion groove 120 and at least one of the inner exhaust ports 161 corresponding to the diversion groove 120 refer to the outer exhaust ports 162 provided in the air collecting groove 140 around the diversion groove 120 and the inner exhaust ports 161 provided in the distal end portion 124 of the diversion groove 120 or between the air collecting groove 140 and the distal end portion 124. For example, in some specific embodiments, as shown in Figure 19 and Figure 20 , the virtual air passage 190 includes a first virtual air passage 191 and a second virtual air passage 192, and the first virtual air passage 191 and the second virtual air passage 192 extend in different radial directions; the diversion groove 120 includes a first diversion groove 1201, a second diversion groove 1202 and a third diversion groove 1203. Referring to Figure 19, there are 2 said external exhaust ports 162 provided in each of the gas collecting grooves 140 corresponding to the first diversion groove 1201, the second diversion groove 1202, and the third diversion groove 1203. There are 2 said internal exhaust ports 161 provided in the distal ends 124 of both the first diversion groove 1201 and the second diversion groove 1202, and there is 1 said internal exhaust port 161 provided in the distal end 124 of the third diversion groove 1203. Among them, 1 said external exhaust port 162 and 2 said internal exhaust ports 161 corresponding to the first diversion groove 1201 are both located in the second virtual air passage 192; 2 said external exhaust ports 162 and 2 said internal exhaust ports 161 corresponding to the second diversion groove 1202 are both located in the second virtual air passage 192; 2 said external exhaust ports 162 and 1 said internal exhaust port 161 corresponding to the third diversion groove 1203 are both located in the first virtual air passage 191.

[0117] In some embodiments, refer to Figure 20 , there are at least 2 said diversion grooves 120 provided, and at least 2 said diversion grooves 120 include the first diversion groove 1201 and the second diversion groove 1202; at least one said external exhaust port 162 and / or at least one said internal exhaust port 161 corresponding to the first diversion groove 1201 and at least one said external exhaust port 162 and / or at least one said internal exhaust port 161 corresponding to the second diversion groove 1202 are located on the same said virtual air passage 190.

[0118] For example, in some specific embodiments, refer to Figure 19 , 1 said external exhaust port 162 and 2 said internal exhaust ports 161 corresponding to the first diversion groove 1201 and 2 said external exhaust ports 162 and 2 said internal exhaust ports 161 corresponding to the second diversion groove 1202 are both located in the second virtual air passage 192; 1 said external exhaust port 162 corresponding to the first diversion groove 1201 and 2 said external exhaust ports 162 and 1 said internal exhaust port 161 corresponding to the third diversion groove 1203 are both located in the first virtual air passage 191.

[0119] In some other specific embodiments, refer to Figure 20 , there are 2 said external exhaust ports 162 provided in each of the gas collecting grooves 140 corresponding to the first diversion groove 1201, the second diversion groove 1202, and the third diversion groove 1203. Among them, 1 said external exhaust port 162 corresponding to the first diversion groove 1201 and 2 said external exhaust ports 162 corresponding to the second diversion groove 1202 are both located in the second virtual air passage 192; 1 said external exhaust port 162 corresponding to the first diversion groove 1201 and 2 said external exhaust ports 162 corresponding to the third diversion groove 1203 are both located in the first virtual air passage 191.

[0120] In some embodiments, the semiconductor processing equipment includes a process chamber and a pedestal disposed in the process chamber.

[0121] In some specific embodiments, referring to Figure 21 , the semiconductor processing equipment includes a pedestal, a top plate 500, a gas injection device 600, and a rotation driving device 300. A process reaction area is formed between the top plate 500 and the pedestal body 100. Process gas is delivered to the process reaction area through the gas injection device 600 and flows over the surface of the substrate to perform a growth reaction of a semiconductor material layer. The rotation driving device 300 rotates, thereby driving the pedestal body 100 to rotate about the rotation axis. A driving gas delivery pipeline is provided in the sleeve of the rotation driving device 300, and the driving gas is delivered to the flow guiding groove 120 of the pedestal body 100 through the pedestal.

[0122] In some embodiments, a sleeve through which the rotation driving device 300 passes is provided in the middle of the pedestal, and the radial exhaust channel 170 extends into the sleeve and communicates with the outside through the sleeve.

[0123] Although the embodiments of the present application have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to these embodiments. However, it should be understood that such modifications and changes are all within the scope and spirit of the present application described in the claims. Moreover, the present application described herein may have other embodiments and can be implemented or realized in various ways.

Claims

1. A base, characterized in that, Comprising: A base body; A recess provided on the bearing surface of the base body for bearing a substrate; A driving gas delivery channel provided in the base body; A diversion groove provided on the bottom surface of the recess. The diversion groove includes at least one proximal end close to the center of the recess and at least one distal end extending towards the edge of the recess. The proximal end communicates with the driving gas delivery channel, so that the driving gas provided by the driving gas delivery channel flows towards the corresponding distal end along the extending direction of the diversion groove to drive the rotation of the substrate; A gas collecting groove provided on the bottom surface of the recess, corresponding to the distal end for blocking at least part of the driving gas overflowing from the distal end; An exhaust port provided on the bottom surface of the recess, corresponding to the distal end, located within the area surrounded by the outer edge of the gas collecting groove. The outer edge of the gas collecting groove is the side edge away from the distal end; An exhaust duct provided in the base body, located below the recess, with one end communicating with the exhaust port; The diversion groove further includes a diversion section between the proximal end and the corresponding distal end. The diversion groove extends from the area between the two ends of the gas collecting groove into the area surrounded by the gas collecting groove, so that a part of the gas collecting groove is located between the distal end and the diversion section adjacent to the distal end in the radial direction, and a part is located between the distal end and the bottom surface edge of the recess.

2. The base according to claim 1, characterized in that, The diversion groove further includes a diversion section between the proximal end and the corresponding distal end. Define an air flow vortex line pointing from the proximal end to the distal end and extending along the spiral direction of the diversion groove. A first tangent circle with the end point of the air flow vortex line as the center and tangent to the bottom surface edge of the recess. When the number of intersection points between the diversion section adjacent to the distal end in the radial direction and the first tangent circle is 0, the gas collecting groove is arranged within the area surrounded by the orthographic projection of the first tangent circle on the bottom surface of the recess.

3. The base according to claim 2, wherein, Define a second tangent circle with the end point of the air flow vortex line as the center and tangent to the diversion section adjacent to the distal end in the radial direction. When the second tangent circle is located within the first tangent circle, the gas collecting groove is arranged within the area surrounded by the orthographic projection of the second tangent circle on the bottom surface of the recess.

4. The base according to claim 3, characterized in that, The radius of the second tangent circle is R. Define a positioning circle with the end point of the air flow vortex line as the center and a radius of 0.5R. The gas collecting groove is arranged within the area surrounded by the orthographic projection of the positioning circle on the bottom surface of the recess.

5. The base according to claim 2, characterized in that, The air flow vortex line is the vortex line of the diversion groove, and the end point of the air flow vortex line is the intersection point of the air flow vortex line and the end face of the distal end.

6. The base according to claim 1, characterized in that, The exhaust duct includes a connected gas diversion section and an exhaust section, and the inner diameter of the gas diversion section is larger than the inner diameter of the exhaust section.

7. The base according to claim 6, wherein When the gas diversion section is arranged between the exhaust port and the exhaust section, the inner diameter of the gas diversion section decreases along the direction extending towards the exhaust section; When the exhaust section is arranged between the exhaust port and the gas diversion section, the inner diameter of the gas diversion section increases along the direction extending away from the exhaust section.

8. The base according to claim 6, wherein The ratio of the extension length of the gas drainage section to the extension length of the exhaust section is 1:1.5 to 1:

5.

9. The base according to claim 1, characterized in that, The exhaust duct is parallel to the central axis of the bottom surface of the recess, or is inclined to the bottom surface of the recess and extends towards the bottom of the base.

10. The base according to claim 9, characterized in that, Define a first side wall tangent line and a second side wall tangent line that are respectively tangent to the distal end and extend away from the distal end. The distal end is located between the first side wall tangent line and the second side wall tangent line. The region enclosed between the first side wall tangent line and the second side wall tangent line is orthogonally projected onto the bottom surface of the recess to form a first projection area. The exhaust duct is orthogonally projected onto the bottom surface of the recess to form a second projection area. At least a part of the second projection area is located within the first projection area.

11. The base according to claim 1, characterized in that, The exhaust port includes an external exhaust port, and at least one of the external exhaust ports is provided in the gas collection groove.

12. The base according to claim 1, characterized in that, The exhaust port includes an internal exhaust port, and the internal exhaust port is provided at the distal end, or is provided between the gas collection groove and the distal end.

13. The base according to claim 1, characterized in that, The exhaust port includes at least one external exhaust port and at least one internal exhaust port. Each of the external exhaust ports is provided in the gas collection groove, and each of the internal exhaust ports is provided at the distal end or is provided between the gas collection groove and the distal end; Define a virtual air duct on the bottom surface of the recess, and at least one of the external exhaust ports and at least one of the internal exhaust ports are located on the same virtual air duct.

14. The base according to claim 13, characterized in that, The base further includes a radial exhaust passage communicating with the exhaust duct, and the virtual air duct is located on the orthogonal projection of the radial exhaust passage on the bottom surface of the recess.

15. The base according to claim 1, characterized in that, The base further includes a radial exhaust passage communicating with the exhaust duct, and the radial exhaust passage extends towards the middle of the base and / or the edge of the base.

16. A semiconductor processing device, characterized in that, It includes a process chamber and a base as described in any one of claims 1-15 provided in the process chamber.

Images