Wafer unloading device and gold tearing equipment

Abstract

According to the wafer unloading device and the gold tearing equipment provided by the invention, continuous movement or multi-stage segmented movement of the wafer is realized by adopting the speed regulating motor, or multi-stage movement of the wafer is realized by adopting multi-cylinder control, and the movement speed of the wafer is remarkably reduced in the continuous movement process, so that the electrostatic voltage is effectively reduced; different speeds and different strokes are set in each stage in the multi-stage movement strategy, sufficient time is provided for dissipation of static electricity accumulation on the surface of the wafer, the problem that the static voltage is too large due to rapid movement of the wafer is solved to a great extent, and the yield and the production efficiency of products are effectively improved; and due to the use of the speed regulating motor or the multiple air cylinders, existing gold tearing equipment is slightly changed, so that in the actual production process, the gold tearing equipment can be changed with low cost and small change amplitude, the electrostatic control performance of the equipment is remarkably improved, and the high practicability and economical efficiency are achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer processing and manufacturing, and particularly relates to a wafer unloading device and a gold tearing device. Background Art

[0002] The refinement and stability of the semiconductor process flow directly determine the performance and reliability of the chip. Among them, metal patterning on the wafer is a key step in constructing the integrated circuit interconnection structure, which is usually realized by a combination process of "lithography process + metal thin film deposition + dry gold tearing + wet stripping + degluing". The specific process is as follows: 1) Lithography process: Coating a photoresist on the wafer surface and forming a mask pattern through lithography; 2) Metal thin film deposition: Depositing a metal layer on the lithography pattern surface by processes such as sputtering, evaporation or electroplating; 3) Dry gold tearing: Removing the excess metal outside the photoresist pattern and only retaining the required metal pattern; 4) Wet stripping + degluing: Removing the metal and residual photoresist on the residual photoresist pattern to finally form a high-precision metal interconnection structure.

[0003] During the dry gold tearing process, it is necessary to first attach the gold tearing film to the surface of the semiconductor wafer, and then tear the gold tearing film to stick away the metal on the photoresist. During the tearing process of the gold tearing film, the interaction between the plasma and the semiconductor wafer surface will generate electrostatic accumulation. In the existing dry gold tearing process, a pedestal to release charge or an ion blower to neutralize is usually used to dissipate the electrostatic accumulation generated during the dry gold tearing process. As Figure 1 shown, for semiconductor wafers made of materials with specific conductive properties such as Si and GaAs, due to the good conductivity of the material itself, the electrostatic accumulation generated during the dry gold tearing process can be introduced into the conductor pedestal through the wafer itself and then grounded and conducted away; for semiconductor wafers made of insulating or semi-insulating materials such as SiC, due to the too large resistivity of the material itself, the electrostatic accumulation generated during the dry gold tearing process is difficult to form a loop through the semiconductor wafer, the conductor pedestal and grounding, so it cannot be dissipated through the semiconductor wafer itself and the conductor pedestal. The electrostatic accumulation on the semiconductor wafer surface can only be dissipated by the neutralization of the ion blower; as Figure 2As shown, the ions generated by the ion blower reach the upper surface of the semiconductor wafer under the action of the electric field and neutralize the electrostatic accumulation on the upper surface of the semiconductor wafer. However, through experiments, it is found that the ion blower has an obvious effect on the electrostatic dissipation of voltages above 50V, but hardly has any effect on the electrostatic dissipation of voltages below 20V. In addition, when using the wafer unloading device to lift the semiconductor wafer, the induced electric field above the semiconductor wafer will be enhanced at the moment when the semiconductor wafer is lifted. The enhanced induced electric field can effectively help the charge dissipation. Moreover, the amount of electrostatic charge accumulation and the distance between the semiconductor wafer and the base directly determine the induced electric field, and the moving speed of the semiconductor wafer affects the distance between the semiconductor wafer and the base. After the charge dissipation, the induced electric field can be reduced, resulting in a decrease in the static voltage. Based on the above content, for semiconductor wafers made of insulating or semi-insulating materials such as SiC, the static voltage can be reduced by lowering the rising speed of the semiconductor wafer, and the static voltage during the moving process can be monitored in real time. When it is found that the static voltage has a sudden increase trend or reaches the threshold voltage, the movement of the semiconductor wafer can be reduced or stopped in time, and using an ion blower to neutralize part of the charge can achieve the dissipation of the electrostatic accumulation on the surface of the semiconductor wafer.

[0004] Currently, the wafer unloading devices for semiconductor wafers are all driven by a cylinder. The cylinder can move the semiconductor wafer to the target position by executing only one movement command; the rising speed of the ejector pin can be controlled by adjusting the intake valve and exhaust valve of the cylinder, but the cylinder's ability to adjust the speed is limited. As Figure 3 shown, it will still cause the static voltage of the semiconductor wafer to be too high during the movement process, resulting in too fast electrostatic release, unable to meet the electrostatic release requirements, and the excessive static voltage far exceeds the tolerance threshold of the device, which is extremely likely to cause device damage.

[0005] Therefore, how to provide a wafer unloading device to dissipate the electrostatic accumulation generated by semiconductor wafers made of insulating or semi-insulating materials such as SiC during the dry gold tearing process, so that the insulating or semi-insulating wafers such as SiC can meet the electrostatic release requirements during the unloading process and prevent device damage at the same time has become a challenge. Summary of the Invention

[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present invention is to provide a wafer unloading device and a gold tearing device to solve the problem that the static voltage generated by semiconductor wafers made of insulating or semi-insulating materials such as SiC is too high during the dry gold tearing process and may cause device damage.

[0007] To achieve the above object and other related objects, the present invention provides a wafer unloading device, and the wafer unloading device includes:

[0008] A base, on which an ejector pin hole is provided;

[0009] A driving device and a support plate, the support plate is connected to the driving device, and a thimble is arranged on the support plate. The thimble is matched with the thimble hole so that the base is fixed on the driving device;

[0010] A motion control module, the motion control module is connected to the driving device, is used to set a movement strategy, form a driving instruction according to the movement strategy, and send the driving instruction to the driving device, so as to control the thimble and the support plate to move according to the movement strategy;

[0011] A feedback control module, one end of the feedback control module is connected to the driving device, and the other end is connected to an on-line static voltage probe. The on-line static voltage probe can detect the static voltage on the wafer in real time and send the static voltage detection value to the feedback control module. The feedback control module compares the static voltage detection value with a preset threshold voltage. When the static voltage detection value is greater than the preset threshold voltage, it controls the driving device to reduce the moving speed until the static voltage detection value is less than or equal to the preset threshold voltage; when the static voltage detection value is less than or equal to the preset threshold voltage, it controls the thimble to continue to move according to the established movement strategy.

[0012] Optionally, the movement strategy includes a continuous movement strategy and a multi-stage movement strategy; wherein, the continuous movement strategy means that the wafer starts to rise from the base to a target height, and the continuous movement strategy has a preset first speed; the multi-stage movement strategy means that the process of rising the wafer from the base to the target height is divided into multiple continuous movement stages, and a first specified duration is set as the stop movement duration between adjacent movement stages, and corresponding displacement amounts and speeds are set for each movement stage in the multi-stage movement strategy.

[0013] Optionally, in the multi-stage movement strategy, the displacement amount in the prior movement stage is less than or equal to the displacement amount in the subsequent movement stage, and the speed in the prior movement stage is less than or equal to the speed in the subsequent movement stage.

[0014] Optionally, the speed of the continuous movement strategy is a variable speed strategy, that is, the first speed gradually increases or the first speed gradually increases and then remains constant at a certain value.

[0015] Optionally, the driving device includes a speed-regulating motor or multiple cylinders.

[0016] Optionally, when the driving device is a speed-regulating motor, the movement strategy is set as a continuous movement strategy or a multi-stage movement strategy. Among them, the speed of the speed-regulating motor is 0.02 - 1 mm / s, and the control accuracy of the speed-regulating motor is at least 0.1 mm.

[0017] Optionally, when the driving device is multiple cylinders, the movement strategy is set as a multi-stage movement strategy, the number of stages of the multi-stage movement strategy is the same as the number of cylinders, and each cylinder correspondingly executes different movement stages in the multi-stage movement strategy.

[0018] Optionally, the cylinders include a first cylinder, a second cylinder, and a third cylinder, as well as correspondingly arranged first output shaft, second output shaft, and third output shaft. Wherein, the other end of the first output shaft is fixedly connected to the cylinder block of the second cylinder, the other end of the second output shaft is fixedly connected to the cylinder block of the third cylinder, and the other end of the third output shaft is fixedly connected to the support plate.

[0019] Optionally, the feedback control module can establish a model relationship between the movement-speed curve of the wafer, the static voltage detection value of the wafer, and the yield rate through machine learning methods, and automatically adjust the gold tearing speed and the wafer unloading speed of the wafer according to the model relationship.

[0020] The present invention also provides a gold tearing device, and the gold tearing device uses the above-mentioned wafer unloading device to lift the wafer on the base.

[0021] As described above, the wafer unloading device and the gold tearing device of the present invention have the following beneficial effects: The present invention uses a speed-regulating motor to realize the continuous movement of the wafer or multi-cylinder control to realize the multi-stage movement of the wafer, and significantly reduces the movement speed of the wafer during the continuous movement process, thereby effectively reducing the static voltage; Different speeds and different stroke amounts are set in each stage of the multi-stage movement strategy, providing sufficient time for the dissipation of the static electricity accumulation on the wafer surface, and greatly avoiding the problem of excessive static voltage caused by the rapid movement of the wafer; and the use of the speed-regulating motor or multi-cylinders makes less changes to the existing gold tearing device, so that in the actual production process, the gold tearing device can be modified with lower cost and smaller modification range, significantly improving the static electricity control performance of the device, and having high practicability and economy; In addition, the machine learning of the feedback control module of the present invention can also establish the movement-speed curve of the wafer and automatically adjust the gold tearing speed and the wafer unloading speed of the wafer, solve the static electricity release generated during the gold tearing process of the wafer, keep the voltage during the wafer unloading process below 100V, and effectively improve the product yield rate and production efficiency. Description of the Drawings

[0022] Figure 1 It shows a schematic diagram of the static voltage of semiconductor wafers such as Si and GaAs in the prior art.

[0023] Figure 2 It shows a schematic diagram of the static voltage of insulating or semi-insulating wafers such as SiC in the prior art after being neutralized by an ion blower.

[0024] Figure 3 It shows a schematic diagram of the static voltage during the wafer unloading process of insulating or semi-insulating wafers such as SiC in the prior art.

[0025] Figure 4 It shows a schematic structural diagram of the wafer unloading device when a speed-regulating motor is used in an embodiment of the present invention.

[0026] Figure 5 It shows a schematic structural diagram of the wafer unloading device with multiple cylinders in an embodiment of the present invention.

[0027] Description of component labels

[0028] 10. Driving device; 101. Output shaft; 11. Support plate; 12. Thimble; 13. Base; 14. SiC wafer; 15. Online static voltage probe; 16. Ion blower; 171. Speed-regulating motor; 172. Speed-regulating motor output shaft; 181. First cylinder; 182. First output shaft; 183. Second cylinder; 184. Second output shaft; 185. Third cylinder; 186. Third output shaft. Specific embodiments

[0029] The following uses specific specific examples to illustrate the embodiments of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0030] When detailing the embodiments of the present invention, for the convenience of description, the schematic diagrams showing the device structure will be enlarged locally in a non-general proportion, and the schematic diagrams are only examples and should not limit the scope of protection of the present invention here. In addition, in actual production, three-dimensional spatial dimensions including length, width, and depth should be included.

[0031] For the convenience of description, spatial relationship terms such as "below", "beneath", "lower", "under", "above", "on" may be used herein to describe the relationship between one element or feature shown in the drawings and other elements or features. It will be understood that these spatial relationship terms are intended to include other directions of the device in use or operation, in addition to the directions depicted in the drawings.

[0032] In the context of the present application, the structure in which the first feature is "above" the second feature may include an embodiment in which the first and second features are in direct contact, and may also include an embodiment in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0033] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present invention. Therefore, only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.

[0034] In the process of dry gold tearing, the gold tearing film needs to be first attached to the surface of the semiconductor wafer, and then the metal on the photoresist is adhered away by tearing the gold tearing film. The charges generated during the tearing of the gold tearing film will accumulate on the surface of the semiconductor wafer and form an electrostatic field; after the dry gold tearing process is completed, a wafer unloading device is required to lift the insulating or semi-insulating wafer on the pedestal, so that the manipulator can unload the insulating or semi-insulating wafer and transfer it to the next process step.

[0035] In this embodiment, the wafer unloading device includes a pedestal 13, on which a thimble hole is provided; a driving device 10 and a support plate 11, the support plate 11 is connected to the driving device 10, and an output shaft 101 is also provided between the support plate 11 and the driving device 10. A thimble 12 is provided on the support plate 11, and the thimble 12 is matched with the thimble hole so that the pedestal 13 is fixed on the driving device 10; a motion control module, the motion control module is connected to the driving device 10, is used to set a movement strategy, form a driving instruction according to the movement strategy, and send the driving instruction to the driving device 10, so as to control the thimble 12 and the support plate 11 to move according to the movement strategy; a feedback control module, one end of the feedback control module is connected to the driving device 10, and the other end is connected to an on-line static voltage probe 15. The on-line static voltage probe 15 can detect the static voltage on the wafer in real time and send the static voltage detection value to the feedback control module. The feedback control module compares the static voltage detection value with a preset threshold voltage. When the static voltage detection value is greater than the preset threshold voltage, it controls the driving device 10 to reduce the moving speed until the static voltage detection value is less than or equal to the preset threshold voltage; when the static voltage detection value is less than or equal to the preset threshold voltage, it controls the thimble 12 to continue moving according to the established movement strategy.

[0036] As an example, the movement strategy includes a continuous movement strategy and a multi-stage movement strategy.

[0037] Specifically, the continuous movement strategy means that the wafer is lifted from the upper surface of the base 13 to the target height as a continuous movement stage, and a first speed is set for this continuous movement stage; the multi-stage movement strategy means that the process of lifting the wafer from the base 13 to the target height is divided into multiple continuous movement stages. For example, the multi-stage movement strategy is divided into three continuous movement stages, namely the first movement stage, the second movement stage, and the third movement stage, and a first specified duration is set as the stop movement duration (the stop movement duration can be set to 0 according to needs) between adjacent movement stages. Corresponding displacement amounts and speeds are set for the first movement stage, the second movement stage, and the third movement stage respectively. The displacement amounts of the first movement stage, the second movement stage, and the third movement stage can be the same or different, and the speeds of the first movement stage, the second movement stage, and the third movement stage can be the same or different. Generally speaking, the displacement amount in the prior movement stage is less than or equal to the displacement amount in the subsequent movement stage, and the speed in the prior movement stage is less than or equal to the speed in the subsequent movement stage, so as to avoid excessive division of the number of stages and ultimately achieve the elimination of static electricity and the maintenance or even improvement of the production efficiency of the product.

[0038] As an example, the speed of the continuous movement strategy is a variable speed strategy, that is, the first speed gradually increases or the first speed gradually increases and then remains constant at a certain value.

[0039] Specifically, considering the actual change of static voltage in the process of dry gold tearing, the speed of the continuous movement strategy is set as a variable speed strategy. It is relatively slow in the initial stage of the continuous movement strategy and relatively fast in the subsequent stage of the continuous movement strategy, that is, the first speed gradually increases or the first speed gradually increases and then remains constant at a certain value.

[0040] Specifically, compared with the driving scheme of a single cylinder in the prior art's wafer unloading device, which is difficult to operate slowly and cannot control the speed, the present embodiment designs a new movement strategy for the movement process of the SiC wafer 14. By reducing the movement speed of the SiC wafer 14 or controlling the movement process of the wafer in stages, the change amount of static voltage caused by the movement of the SiC wafer 14 is controlled within a reasonable range, so as to ensure the yield and production efficiency of the SiC wafer 14. In addition, it should be noted that during the movement of the SiC wafer 14, the ion blower 16 needs to work continuously to neutralize part of the charge in time when it is found that the static voltage has a tendency to surge or reaches the threshold voltage. The wafer unloading device in the present embodiment is not only applicable to insulating or semi-insulating wafers such as SiC, but also applicable to semiconductor wafers with specific conductive properties such as Si and GaAs.

[0041] As an example, the driving device 10 is a speed control motor 171.

[0042] Specifically, as Figure 4 shown, in this embodiment, a speed-regulating motor 171 is used as the driving device 10. The output shaft 172 of the speed-regulating motor is fixedly connected to the support plate 11. The speed of the speed-regulating motor 171 is 0.02 to 1 mm / s. For example, the speed of the speed-regulating motor 171 is 0.02 mm / s, 0.05 mm / s, or 1 mm / s. The control accuracy of the speed-regulating motor 171 is at least 0.1 mm. An on-line static voltage probe 15 is used to detect the static voltage on the SiC wafer 14 in real time, and the static voltage is kept within a safe range (the preset threshold voltage value is 100 V). The SiC wafer 14 is slowly lifted using a continuous movement strategy. Under the action of the ion blower 16, the static voltage on the SiC wafer 14 is gradually dissipated. In addition, to avoid the situation where the static voltage exceeds the safe range, the on-line static voltage probe 15 is used to detect the static voltage on the wafer in real time and send the static voltage detection value to the feedback control module. The feedback control module compares the size of the static voltage detection value and the preset threshold voltage. If the static voltage detection value is greater than the set threshold, the control thimble 12 reduces the moving speed or stops moving until the static voltage detection value is less than or equal to the preset threshold voltage. When the static voltage detection value is less than or equal to the preset threshold voltage, the control thimble 12 continues to slowly lift the SiC wafer 14 according to the established continuous movement strategy until the manipulator unloads the SiC wafer 14 and transfers it to the next process step. In this embodiment, the characteristics of the high accuracy and the ability to achieve a low moving speed of the speed-regulating motor 171 are mainly utilized to reduce the lifting speed of the SiC wafer 14 and achieve good dissipation of the static voltage on the SiC wafer 14.

[0043] In another embodiment, a multi-stage movement strategy is adopted to lift the SiC wafer 14. Specifically, the travel of the SiC wafer 14 is divided into a first movement stage, a second movement stage, and a third movement stage. Among them, the displacement of the first movement stage is 0.3 mm, and the speed strategy is 0.02 mm / s; the displacement of the second movement stage is 0.5 mm, and the speed strategy is 0.1 mm / s; the displacement of the third movement stage is 8 mm, and the speed strategy is 1 mm / s. And after each movement stage ends, the SiC wafer 14 needs to stay for several seconds or until the electrostatic accumulation dissipates to 20 V before proceeding to the next movement stage. In this embodiment, the static voltage on the SiC wafer 14 is detected in real time by the on-line static voltage probe 15 to keep the static voltage within a safe range (the preset threshold voltage value is 100 V). And to avoid the situation where the static voltage exceeds the safe range, in this embodiment, a feedback control module is introduced. The on-line static voltage probe 15 detects the static voltage on the wafer in real time and sends the static voltage detection value to the feedback control module. The feedback control module compares the static voltage detection value with the preset threshold voltage. When the static voltage detection value is greater than the preset threshold voltage, it controls the ejector pin 12 to reduce the moving speed or stop moving until the static voltage detection value is less than or equal to the preset threshold voltage; when the static voltage detection value is less than or equal to the threshold voltage, it controls the ejector pin 12 to continue moving according to the established movement strategy. In this embodiment, the wafer unloading device can not only move the SiC wafer 14 at a lower speed but also concentrate the dissipation of static electricity during the intermediate stop stages between the first movement stage and the second movement stage and between the second movement stage and the third movement stage.

[0044] As an example, the driving device 10 is a plurality of cylinders.

[0045] In another embodiment, a plurality of cylinders are used as the driving device 10. Specifically, as Figure 5As shown, multiple cylinders include a first cylinder 181, a second cylinder 183, and a third cylinder 185, as well as correspondingly arranged first output shaft 182, second output shaft 184, and third output shaft 186. Among them, the other end of the first output shaft 182 is fixedly connected to the cylinder block of the second cylinder 183, the other end of the second output shaft 184 is fixedly connected to the cylinder block of the third cylinder 185, and the other end of the third output shaft 186 is fixedly connected to the support plate 11. In this embodiment, the movement strategy of the SiC wafer 14 is set as a multi-stage movement strategy, and the number of stages of the multi-stage movement strategy is the same as the number of cylinders. Here, the stroke of the SiC wafer 14 is divided into a first movement stage, a second movement stage, and a third movement stage. Among them, the displacement of the first movement stage is 0.3 mm, the stroke of the second movement stage is 0.5 mm, and the stroke of the third movement stage is 8 mm. The speeds of the first movement stage, the second movement stage, and the third movement stage all adopt the lowest speed of the cylinder, which is 0.5 mm / s. And after the end of each movement stage, the SiC wafer 14 needs to stay for several seconds or until the static electricity accumulation dissipates to 20 V, and then the next movement stage is carried out. In this embodiment, the stroke of the SiC wafer 14 is divided into a first movement stage, a second movement stage, and a third movement stage. There is a stop duration set between the first movement stage and the second movement stage, as well as between the second movement stage and the third movement stage, to conduct static electricity dissipation for the SiC wafer 14 for several seconds; and in the first movement stage, the second movement stage, and the third movement stage, the ion blower 16 is kept working continuously, so that the static electricity dissipates continuously.

[0046] In addition, in another embodiment of the present invention, a gold tearing device is further provided. The gold tearing device uses the above-mentioned wafer unloading device to lift the wafer located on the base. Among them, the feedback control module can establish a model relationship between the movement-speed curve of the wafer, the static voltage detection value of the wafer, and the yield rate through machine learning methods. The feedback control module can also automatically adjust the gold tearing speed and unloading speed of the wafer according to the model relationship. Through the above device and the set movement strategy, sufficient time is provided for the dissipation of the static electricity accumulation on the wafer surface.

[0047] In summary, for the wafer unloading device and gold tearing equipment of the present invention, a speed-regulating motor is used to achieve continuous movement or multi-stage segmented movement of the wafer, or multi-cylinders are used to control the multi-stage movement of the wafer. During the continuous movement process, the moving speed of the wafer is significantly reduced, thereby effectively reducing the static voltage. Different speeds and different stroke amounts are set in each stage of the multi-stage movement strategy, providing sufficient time for the dissipation of the static electricity accumulated on the wafer surface, and greatly avoiding the problem of excessive static voltage caused by the rapid movement of the wafer. Moreover, the use of the speed-regulating motor or multi-cylinders results in minor modifications to the existing gold tearing equipment. During the actual production process, the gold tearing equipment can be modified at a relatively low cost and with minor changes, significantly improving the static electricity control performance of the equipment, and having high practicality and economy. In addition, the machine learning of the feedback control module of the present invention can also establish the movement-speed curve of the wafer and automatically adjust the gold tearing speed and unloading speed of the wafer, solve the static electricity release during the gold tearing process of the wafer, and maintain the voltage during the wafer unloading process below 100V, effectively improving the product yield and production efficiency. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0048] The above embodiments are only illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes completed by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A wafer unloading device, characterized in that: The wafer unloading device comprises: A base, wherein the base is provided with an ejector hole; A driving device and a support plate, wherein the support plate is connected to the driving device, and an ejector pin is arranged on the support plate, and the ejector pin matches the ejector pin hole so that the base is fixed on the driving device; A motion control module, the motion control module is connected to the driving device, and is used to set a movement strategy, form a driving instruction according to the movement strategy, and send the driving instruction to the driving device, so as to control the ejector pin and the support plate to move according to the movement strategy; A feedback control module, one end of the feedback control module is connected to the driving device, and the other end is connected to an online static voltage probe, the online static voltage probe can detect the static voltage on the wafer in real time and send the static voltage detection value to the feedback control module, the feedback control module compares the static voltage detection value with a preset threshold voltage, when the static voltage detection value is greater than the preset threshold voltage, controls the driving device to reduce the moving speed until the static voltage detection value is less than or equal to the preset threshold voltage; when the static voltage detection value is less than or equal to the preset threshold voltage, controls the ejector pin to continue moving according to a predetermined moving strategy.

2. The wafer unloading device according to claim 1, characterized in that: The movement strategy includes a continuous movement strategy and a multi-stage movement strategy; wherein, the continuous movement strategy refers to raising the wafer from the base to the target height, and the continuous movement strategy has a preset first speed; the multi-stage movement strategy refers to dividing the process of raising the wafer from the base to the target height into multiple continuous movement stages, and setting a first specified time length between adjacent movement stages as the stop motion time length, and setting corresponding displacement and speed for each movement stage in the multi-stage movement strategy.

3. The wafer unloading device according to claim 2, characterized in that: In the multi-stage movement strategy, the displacement in the first movement stage is less than or equal to the displacement in the second movement stage, and the speed in the first movement stage is less than or equal to the speed in the second movement stage.

4. The wafer unloading device according to claim 2, characterized in that: The speed of the continuous movement strategy is a variable speed strategy, that is, the first speed increases gradually or the first speed increases gradually and then maintains a constant value.

5. The wafer unloading device according to any one of claims 2 to 4, characterized in that: The driving device includes a speed-regulating motor or a plurality of cylinders.

6. The wafer unloading device according to claim 5, characterized in that: When the driving device is a speed-regulating motor, the movement strategy is set to a continuous movement strategy or a multi-stage movement strategy, wherein the speed of the speed-regulating motor is 0.02-1 mm / s, and the control accuracy of the speed-regulating motor is at least 0.1 mm.

7. The wafer unloading device according to claim 5, characterized in that: When the driving device is a plurality of cylinders, the movement strategy is set to a multi-stage movement strategy, the number of stages of the multi-stage movement strategy is the same as the number of the cylinders, and each cylinder executes a different movement stage in the multi-stage movement strategy.

8. The wafer unloading device according to claim 7, characterized in that: The cylinder includes a first cylinder, a second cylinder and a third cylinder and correspondingly arranged first output shaft, second output shaft and third output shaft, wherein the other end of the first output shaft is fixedly connected to the cylinder body of the second cylinder, the other end of the second output shaft is fixedly connected to the cylinder body of the third cylinder, and the other end of the third output shaft is fixedly connected to the support plate.

9. A gold tearing device, characterized in that: The wafer unloading device according to any one of claims 1 to 8 is used to lift the wafer on the base.

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