Inner cavity of atomic layer deposition equipment and double-chamber atomic layer deposition equipment

Abstract

The invention discloses an inner cavity of atomic layer deposition equipment and double-chamber atomic layer deposition equipment, relates to the technical field of semiconductors, and aims to solve the problem that in an inner cavity of existing atomic layer deposition equipment, gas is difficult to fully diffuse, so that the uniformity of thin film deposition is poor. The inner cavity of the atomic layer deposition equipment comprises an inner cavity main body, the inner cavity main body is arranged in the atomic layer deposition equipment, an annular groove is formed in the top surface of the inner cavity main body along the center of the top surface of the inner cavity main body, and a source inlet and an extraction opening which are communicated with an outer cavity are formed in the annular groove; the top of the inner cavity body is divided into a substrate bearing portion and an annular gas distribution portion by the annular groove, the annular gas distribution portion is composed of the annular groove, a source inlet, a gas extraction opening and a gas uniformizing cover plate covering the annular groove, and the gas uniformizing cover plate is provided with a gas uniformizing hole array. And the gas-phase precursor injected from the source inlet in the annular groove is diffused to the substrate bearing part through the gas homogenizing hole array.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and particularly to an inner cavity of an atomic layer deposition device and a dual-chamber atomic layer deposition device. Background Art

[0002] With its high-precision thin film preparation ability, atomic layer deposition technology plays a key role in many fields with strict requirements for thin film quality, such as semiconductor device manufacturing, optical coating, and new energy. With the development of the industry, dual-chamber atomic layer deposition devices have gradually become the mainstream choice in the market due to their advantages such as improving production efficiency and optimizing process control. In a dual-chamber atomic layer deposition device, the inner cavity, as a core component, directly determines the quality of thin film deposition and the overall performance of the device.

[0003] Currently, the gas distribution system of the inner cavity of the dual-chamber atomic layer deposition device has a simple structure, only setting a basic flow guiding structure. After the gas enters the cavity, it is difficult to fully diffuse, and turbulent airflows or uneven air pressures are likely to occur at the edges of the cavity. In terms of common wafer thin film deposition, under the traditional inner cavity design, the uniformity of the thin film thickness on the wafer surface is poor. However, as semiconductor processes move towards more advanced processes, the standard for the uniformity of thin film thickness has been greatly improved, and the gas distribution uniformity of the existing technology cannot meet the current strict process requirements. Summary of the Invention

[0004] The purpose of the present invention is to provide an inner cavity of an atomic layer deposition device and a dual-chamber atomic layer deposition device to solve the problem of poor gas distribution in the inner cavity, resulting in poor uniformity of thin film deposition, optimize the gas flow path, and improve the deposition quality.

[0005] To achieve the above purpose, the present invention provides the following technical solutions:

[0006] In the first aspect, the present invention provides an inner cavity of an atomic layer deposition device, including:

[0007] An inner cavity main body is arranged inside the atomic layer deposition device. An annular groove is formed on the top surface of the inner cavity main body along the center of the top surface of the inner cavity main body. An inlet port and an exhaust port communicating with the outer cavity are arranged in the annular groove. The annular groove divides the top part of the inner cavity main body into a substrate carrying part and an annular gas distribution part. Among them, the annular gas distribution part is composed of the annular groove, the inlet port, the exhaust port, and a gas equalizing cover plate covering the annular groove. The gas equalizing cover plate is provided with an array of gas equalizing holes for diffusing the gas-phase precursor injected from the inlet port in the annular groove to the substrate carrying part through the array of gas equalizing holes.

[0008] Compared with the prior art, the inner cavity of the atomic layer deposition equipment provided by the present invention solves the problem that the gas diffusion in the inner cavity of the existing dual-chamber atomic layer deposition equipment is insufficient, and turbulent air flow or uneven air pressure is likely to occur at the edge of the cavity, resulting in poor film uniformity on the surface of the wafer. Specifically, when the equipment is operating, the gas-phase precursor is injected into the annular groove from the inlet source. The gas distribution cover plate in the annular gas distribution part, with its uniform air hole array, evenly diffuses the gas-phase precursor in the annular groove to the substrate carrier part. During this process, the uniform air hole array uniformly diffuses the air flow, so that the gas can form a stable and uniform distribution when reaching the substrate surface. This structural design effectively improves the gas flow condition in the cavity, avoids abnormal aggregation or dispersion of the gas at the edge of the cavity, and ensures that each area on the surface of the wafer can receive a uniform gas-phase precursor. It significantly improves the gas distribution uniformity, thereby improving the uniformity of the deposited film. The stable and uniform gas distribution optimizes the deposition process, reduces film defects caused by uneven gas, and improves the product quality.

[0009] Optionally, in the inner cavity of the above atomic layer deposition equipment, the annular gas distribution part further includes a first annular block and a second annular block. The first annular block and the second annular block are arranged at intervals along the circumferential direction of the annular groove in the annular groove. Among them, the first annular block is located on one side of the area between the inlet source and the air extraction port, and the second annular block is located on the other side of this area. The tops of the first annular block and the second annular block are in close contact with the lower surface of the gas distribution cover plate, and the uniform air hole array of the gas distribution cover plate is distributed in the arc section of the annular groove between the inlet source and the air extraction port.

[0010] Optionally, in the inner cavity of the above atomic layer deposition equipment, the uniform air hole array is arranged at equal intervals along the circumferential direction on the surface of the gas distribution cover plate and is distributed in multiple rows along the radial direction of the gas distribution cover plate.

[0011] Optionally, in the inner cavity of the above atomic layer deposition equipment, the radial distances between each row of the uniform air hole array distributed in multiple rows along the radial direction of the gas distribution cover plate are equal.

[0012] Optionally, in the inner cavity of the above atomic layer deposition equipment, the vertical cross-section of the inner cavity body is elliptical.

[0013] Optionally, in the inner cavity of the above atomic layer deposition equipment, the material of the inner cavity of the atomic layer deposition equipment is 316L stainless steel material or aluminum alloy.

[0014] In a second aspect, the present invention further provides a dual-chamber atomic layer deposition equipment, including:

[0015] An outer cavity for accommodating the inner cavity;

[0016] The inner cavity of the atomic layer deposition equipment of any one of the above, and the inner cavity of the atomic layer deposition equipment is arranged in the outer cavity.

[0017] Compared with the prior art, the beneficial effects of the double-chamber atomic layer deposition equipment provided by the present invention are the same as those of the inner cavity of the above atomic layer deposition equipment, and will not be elaborated here.

[0018] Optionally, in the above double-chamber atomic layer deposition equipment, the double-chamber atomic layer deposition equipment further includes a conical bracket, which is fixedly arranged in the outer cavity. The conical part and the bottom of the conical bracket are connected. The other ends of the channels of the source inlet and the pumping port of the inner cavity are detachably connected to the conical part of the conical bracket, and the conical bracket is used to introduce the gas-phase precursor into the inner cavity or extract the waste gas.

[0019] Optionally, in the above double-chamber atomic layer deposition equipment, a sealing ring is arranged on the conical part of the conical bracket.

[0020] Optionally, in the above double-chamber atomic layer deposition equipment, the bolts of the conical bracket are fixed to the side wall of the outer cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings described herein are used to provide a further understanding of the present invention, and constitute a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention, and do not constitute an improper limitation of the present invention. In the drawings:

[0022] Figure 1 It is the front view sectional view of the inner cavity of an atomic layer deposition equipment provided by an embodiment of the present invention;

[0023] Figure 2 It is the overall structure schematic diagram of the inner cavity of an atomic layer deposition equipment provided by an embodiment of the present invention;

[0024] Figure 3 It is the top view schematic diagram of the inner cavity of an atomic layer deposition equipment provided by an embodiment of the present invention;

[0025] Figure 4 It is the structure schematic diagram of the gas-uniforming cover plate of the inner cavity of an atomic layer deposition equipment provided by an embodiment of the present invention.

[0026] Reference numerals: 1 is the inner cavity main body, 11 is the annular groove, 12 is the source inlet, 13 is the pumping port, 14 is the substrate bearing part, 2 is the gas-uniforming cover plate, 21 is the gas-uniforming hole array, 3 is the first annular block, and 4 is the second annular block. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0027] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention more clear and understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0028] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0029] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, "a plurality of" means two or more unless otherwise specifically defined. "Several" means one or more unless otherwise specifically defined.

[0030] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation of the present invention.

[0031] In the description of the present invention, it should be noted that unless otherwise clearly specified and limited, the terms "installation", "connection", and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0032] In the first aspect, please refer to Figure 1, the inner cavity of an atomic layer deposition device provided by an embodiment of the present invention includes an inner cavity main body 1. The inner cavity main body 1 is disposed inside the atomic layer deposition device. An annular groove 11 is formed on the top surface of the inner cavity main body 1 along the center of the top surface of the inner cavity main body 1. An inlet port 12 communicating with the outer cavity and an air extraction port 13 are provided in the annular groove 11. The annular groove 11 divides the top of the inner cavity main body 1 into a substrate carrying portion 14 and an annular gas distribution portion. Among them, the annular gas distribution portion is composed of the annular groove 11, the inlet port 12, the air extraction port 13, and a gas equalizing cover plate 2 covering the annular groove 11. The gas equalizing cover plate 2 is provided with a gas equalizing hole array 21 for diffusing the gas-phase precursor injected from the inlet port 12 in the annular groove 11 to the substrate carrying portion 14 through the gas equalizing hole array 21.

[0033] During specific implementation: By forming an annular groove 11 on the top surface of the inner cavity main body 1 and constructing an annular gas distribution portion including the inlet port 12, the air extraction port 13, and the gas equalizing cover plate 2, the problem that the gas diffusion in the inner cavity of the existing double-chamber atomic layer deposition device is insufficient, and turbulent air flow or uneven air pressure is likely to occur at the edge of the cavity, resulting in poor uniformity of the thin film on the wafer surface is solved. Specifically, when the device is operating, the gas-phase precursor is injected into the annular groove 11 from the inlet port 12. The gas equalizing cover plate 2 in the annular gas distribution portion, by virtue of its gas equalizing hole array 21, evenly diffuses the gas-phase precursor in the annular groove 11 to the substrate carrying portion 14. During this process, the gas equalizing hole array 21 evenly diffuses the air flow, so that the gas can form a stable and uniform distribution when reaching the substrate surface. This structural design effectively improves the flow condition of the gas in the cavity, avoids abnormal aggregation or dispersion of the gas at the edge of the cavity, and ensures that each area on the wafer surface can receive a uniform gas-phase precursor. It significantly improves the gas distribution uniformity, and further improves the uniformity of the deposited thin film. The stable and uniform gas distribution optimizes the deposition process, reduces film defects caused by uneven gas, and improves the product quality.

[0034] As a possible implementation, as Figure 1 shown, the annular gas distribution portion further includes a first annular stopper 3 and a second annular stopper 4. The first annular stopper 3 and the second annular stopper 4 are disposed in the annular groove 11 at intervals along the circumferential direction of the annular groove 11. Among them, the first annular stopper 3 is located on one side of the area between the inlet port 12 and the air extraction port 13, and the second annular stopper 4 is located on the other side of this area. The tops of the first annular stopper 3 and the second annular stopper 4 are in close contact with the lower surface of the gas equalizing cover plate 2, and the gas equalizing hole array 21 of the gas equalizing cover plate 2 is distributed in the arc section of the annular groove 11 between the inlet port 12 and the air extraction port 13.

[0035] In the annular gas distribution part of the atomic layer deposition equipment, the first annular baffle 3 and the second annular baffle 4 are circumferentially spaced apart in the annular groove 11. The first annular baffle 3 is on one side between the source inlet 12 and the pumping port 13 in the annular area, and the second annular baffle 4 is on the other side of this area. The tops of these two annular baffles are in close contact with the lower surface of the gas distribution cover plate 2, and this contact method ensures that the gas can only flow within a specific path. The gas distribution hole array 21 on the gas distribution cover plate 2 is arranged in the arc section of the annular groove 11 between the source inlet 12 and the pumping port 13, further precisely defining the diffusion path of the gas. When the equipment operates, the gas-phase precursor is injected into the annular groove 11 from the source inlet 12. Due to the blocking of the first annular baffle 3 and the second annular baffle 4, the precursor gas cannot diffuse randomly, preventing the precursor from being pumped away by the pumping port 13 as soon as it enters the annular groove 11, so that the precursor gas can be discharged through the gas distribution hole array 21 on the gas distribution cover plate 2. When the gas passes through the gas distribution hole array 21 of the gas distribution cover plate 2, it is evenly dispersed and diffused to the wafer surface of the substrate carrier part 14 to form a laminar flow coverage, thereby improving the uniformity of thin film deposition. After that, the gas that has completed the deposition and the reaction by-products are drawn out of the inner cavity and finally discharged under the negative pressure generated by the pumping port 13.

[0036] With such a setting, precise control of the gas flow path is provided, avoiding the precursor being pumped away by the vacuum pump through the diversion groove as soon as it enters the reaction chamber, and improving the utilization rate of the precursor. At the same time, under the action of the gas distribution hole array 21, the gas can cover the substrate surface more evenly, improving the uniformity of the precursor gas distribution, and thus effectively improving the uniformity of thin film deposition, which is beneficial to preparing high-quality products with good consistency. At the same time, the stable gas flow environment reduces the turbulent flow phenomenon of the gas in the cavity, reduces the unstable factors during the operation of the equipment, and prolongs the service life of the equipment.

[0037] It should be noted that the number of the first annular baffle 3 and the second annular baffle 4 is not limited here. The number of the first annular baffle 3 and the second annular baffle 4 can be one, two or more, as long as it can block the air flow short circuit between the source inlet 12 and the pumping port 13 in the annular groove 11.

[0038] As a possible implementation, the gas distribution hole array 21 is arranged at equal circumferential intervals on the surface of the gas distribution cover plate 2 and is distributed in multiple rows along the radial direction of the gas distribution cover plate 2.

[0039] Specifically, the uniform air holes are arranged on the uniform air cover plate 2 at uniform intervals along the circumferential direction of the uniform air cover plate 2, and are divided into two groups along the circumferential direction of the uniform air cover plate 2. Each group of uniform air holes includes a plurality of uniform air holes with equal circumferential spacing. At the same time, the uniform air hole array 21 is distributed in multiple rows along the radial direction of the annular groove 11. By setting it in this way, not only can the gas be evenly diffused in the circumferential direction, avoiding the situation of excessive or too small local gas flow, but also the uniform air holes in different rows can guide the gas to the substrate bearing part 14 at different radial positions, so that the substrate can receive uniform and sufficient gas-phase precursors throughout the radial range, comprehensively ensuring the uniform coverage of the gas on the entire substrate surface and providing a stable and uniform gas environment for high-quality thin film deposition.

[0040] Furthermore, the radial spacing between each row of the uniform air hole array 21 distributed in multiple rows along the radial direction of the uniform air cover plate 2 is equal. On the uniform air cover plate 2, there are multiple rows of uniform air holes along its radial direction, and the distances between these different rows of uniform air holes in the radial direction are equal. This layout method with equal radial spacing between each row can ensure that when the gas-phase precursor diffuses along the radial direction, the diffusion speed and flow rate at each position are relatively uniform. Because the spacing is equal, the change in the resistance suffered by the gas when passing through different rows of uniform air holes is relatively stable, and it will not cause gas congestion due to too small a spacing in a certain area or make the gas too sparse due to too large a spacing in a certain area. This enables a relatively consistent gas volume to be received at different radial positions on the substrate surface, thereby further improving the uniformity of the gas distribution on the substrate surface.

[0041] At the same time, the above-mentioned uniform spacing distribution helps to maintain the stability of the gas laminar flow state. When the gas passes through the uniform air holes, the relatively regular spacing can reduce the possibility of turbulence occurring during the gas flow process, enabling the gas to flow towards the substrate surface in a relatively stable and orderly state. The stable laminar flow state can reduce the defects on the thin film surface, improve the flatness and consistency of the thin film, and thus improve the product yield.

[0042] As a possible implementation, the vertical cross-section of the inner cavity body 1 is elliptical. That is, the inner cavity body 1 has an elliptical structure. By compressing the height of the main cavity, an elliptical inner cavity body 1 is formed, reducing the ineffective space between the top and the side walls, and effectively controlling the ineffective volume. Reducing the ineffective volume enables the device to be more compact while meeting the process requirements, effectively reducing the floor area of the device and improving the space utilization rate. Moreover, the reduction of the ineffective volume means that during the atomic layer deposition process, the amount of precursor gas to be filled is correspondingly reduced. At the same time, the gas flow path in the cavity is optimized, and more precursor gas can be concentrated in the effective area on the wafer surface to participate in the reaction, reducing the retention of the precursor in the ineffective area (such as the gap between the top and the side walls) and the situation of being purged and discharged, significantly improving the utilization rate of the precursor and reducing the production cost.

[0043] As a possible implementation, the material of the inner cavity of the atomic layer deposition device is 316L stainless steel or aluminum alloy. 316L stainless steel has stability against various corrosive chemical gases during the atomic layer deposition process, ensuring the stability of the inner cavity structure under long-term complex working conditions. Its smooth surface effectively reduces impurity adsorption, contributing to the production of high-quality thin films. At the same time, its good machining performance can achieve complex inner cavity structures, and its strength and toughness can cope with the gas pressure and various stresses in the cavity. Aluminum alloy, with its lightweight characteristic, reduces the weight of the device while its excellent thermal conductivity is conducive to rapid heat dissipation, ensuring the thermal stability of the device. After special treatment, its corrosion resistance and wear resistance are improved. Whether it is 316L stainless steel to ensure structural stability and cleanliness or aluminum alloy to balance lightweight and heat dissipation, both materials can effectively reduce the ineffective space inside the device, optimize the gas flow path, improve the utilization rate of the precursor, and provide a solid support for the efficient and stable operation of the atomic layer deposition device and the realization of high-precision thin film deposition.

[0044] In a second aspect, the embodiments of the present invention further provide a dual-chamber atomic layer deposition device, including: an outer cavity and the inner cavity of any of the above atomic layer deposition devices, where the outer cavity is used to accommodate the inner cavity; the inner cavity of the atomic layer deposition device is disposed inside the outer cavity. Specifically, during implementation: the inner cavity of any of the above atomic layer deposition devices is placed inside the outer cavity to form a complete dual-chamber atomic layer deposition device structure. The outer cavity and the inner cavity work together. The outer cavity provides a stable external environment for the inner cavity, ensuring that it is not interfered by the outside world during the complex atomic layer deposition process. The structural design of the inner cavity improves the uniformity of gas distribution, enabling the gas-phase precursor to uniformly diffuse to the substrate carrier 14. At the same time, by optimizing the inner cavity structure, the annular groove 11 and the gas distribution cover plate 2 are set to optimize the gas flow path, improve the utilization rate of the gas-phase precursor, and enhance the overall performance and production efficiency of the dual-chamber atomic layer deposition device.

[0045] As a possible implementation, the dual-chamber atomic layer deposition equipment further includes a conical bracket. The conical bracket is fixedly arranged in the outer chamber. The conical part and the bottom of the conical bracket are connected. The other ends of the channels of the source inlet 12 and the pumping port 13 of the inner chamber are detachably connected to the conical part of the conical bracket. The conical bracket is used to introduce the gaseous precursor into the inner chamber or extract the waste gas.

[0046] In the dual-chamber atomic layer deposition equipment, there is also a conical bracket. The conical bracket is fixedly installed inside the outer chamber, and its conical part and the bottom are interconnected. The other ends of the channels of the source inlet 12 and the pumping port 13 of the inner chamber can be detachably connected to the conical part of the conical bracket. During operation, the gaseous precursor enters from the external gas source through the bottom of the conical bracket. Due to the special structure of the conical part, the gas can be preliminarily converged and guided inside the conical bracket, and then smoothly flows into the inner chamber through the channel of the source inlet 12 connected to the conical part, providing the reactants required for the atomic layer deposition reaction. When the deposition reaction is completed, the generated waste gas enters the conical part of the conical bracket through the channel of the pumping port 13 and is then discharged from the bottom of the equipment. Such an arrangement realizes the detachable connection between the inner chamber and the outer chamber of the dual-chamber atomic layer deposition equipment. This detachable connection method facilitates the installation and disassembly of the inner chamber. When the inner chamber needs to be maintained or replaced, it can be separated from the conical bracket without complex operations, significantly improving the maintenance efficiency of the equipment and reducing the maintenance cost. At the same time, the guiding effect of the conical bracket on the gas enables the gaseous precursor to enter the inner chamber more stably, while ensuring the smooth discharge of the waste gas, optimizing the gas transmission path inside the equipment, contributing to improving the stability and efficiency of the atomic layer deposition process, and further enhancing the quality of the thin film deposition and the overall performance of the equipment.

[0047] Furthermore, a sealing ring is arranged on the conical part of the conical bracket. In specific implementation, when the other ends of the channels of the source inlet 12 and the pumping port 13 of the inner chamber are connected to the conical part of the conical bracket, the sealing ring fits tightly at the connection, forming a reliable sealing barrier. It effectively prevents the leakage of the gaseous precursor during the process of flowing into the inner chamber, ensuring that all the gaseous precursors can accurately enter the inner chamber through the source inlet 12 to participate in the atomic layer deposition reaction, improving the utilization rate of the precursor, and avoiding the waste of raw materials caused by leakage. At the same time, during the waste gas extraction stage, the sealing ring prevents the waste gas from leaking from the connection, ensuring that the waste gas can completely pass through the channel of the pumping port 13 and be discharged from the equipment through the conical bracket, maintaining the stability of the gas environment inside the equipment, and enhancing the efficiency and safety of the waste gas discharge.

[0048] Furthermore, the bolts of the conical support are fixed to the side wall of the outer cavity. The conical support is fixed to the side wall of the outer cavity by bolts. The bolt connection method is convenient to operate and stable and reliable. The conical support can be accurately installed at the specified position on the side wall of the outer cavity through bolts, which shortens the assembly time of the equipment and improves the production efficiency. During the operation of the equipment, the tightening force of the bolts ensures that the conical support always remains stable in the complex gas flow and equipment vibration environment, provides a solid and reliable support structure for the introduction of the gas precursor and the extraction of the waste gas, ensures the stability of the gas transmission path, and avoids affecting the gas flow due to the loosening of the conical support, thereby improving the stability of the atomic layer deposition process.

[0049] In the description of the above embodiments, the specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0050] The above is only the specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention can easily think of changes or substitutions, which should be covered by the protection scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. An inner cavity of an atomic layer deposition device, characterized in that: include: An inner cavity body, wherein the inner cavity body is arranged inside an atomic layer deposition device, and an annular groove is opened on the top surface of the inner cavity body along the center of the top surface of the inner cavity body, and a source inlet and an exhaust port connected to the external cavity are provided in the annular groove, and the annular groove separates the top of the inner cavity body into a substrate supporting part and an annular gas distribution part, wherein the annular gas distribution part is composed of the annular groove, the source inlet, the exhaust port and a gas uniforming cover plate covering the annular groove, and the gas uniforming cover plate is provided with an array of gas uniforming holes, which is used to diffuse the gas-phase precursor injected from the source inlet in the annular groove to the substrate supporting part through the array of gas uniforming holes.

2. The inner cavity of the atomic layer deposition device according to claim 1, characterized in that: The annular gas distribution portion also includes a first annular stopper and a second annular stopper, and the first annular stopper and the second annular stopper are arranged in the annular groove at intervals along the circumference of the annular groove, wherein the first annular stopper is located on one side of the area between the source inlet and the gas exhaust port, and the second annular stopper is located on the other side of the area, the tops of the first annular stopper and the second annular stopper are both in contact with the lower surface of the gas uniforming cover plate, and the gas uniforming hole array of the gas uniforming cover plate is distributed in the arc section of the annular groove between the source inlet and the gas exhaust port.

3. The inner cavity of the atomic layer deposition device according to claim 1, characterized in that: The gas uniformity hole array is evenly spaced and arranged in the circumferential direction on the surface of the gas uniformity cover plate, and is distributed in multiple rows along the radial direction of the gas uniformity cover plate.

4. The inner cavity of the atomic layer deposition device according to claim 3, characterized in that: The radial spacing between each row of the gas uniforming hole arrays distributed in multiple rows along the radial direction of the gas uniforming cover plate is equal.

5. The inner cavity of the atomic layer deposition device according to claim 1, characterized in that: The vertical cross section of the inner cavity body is elliptical.

6. The inner cavity of the atomic layer deposition device according to claim 1, characterized in that: The material of the inner cavity of the atomic layer deposition equipment is 316L stainless steel or aluminum alloy.

7. A dual-chamber atomic layer deposition device, characterized in that: include: An outer cavity, the outer cavity is used to accommodate the inner cavity; The inner cavity of the atomic layer deposition device as described in any one of claims 1 to 6, wherein the inner cavity of the atomic layer deposition device is arranged in the outer cavity.

8. The dual-chamber atomic layer deposition apparatus according to claim 7, characterized in that: The dual-chamber atomic layer deposition equipment also includes a conical bracket, which is fixedly arranged in the outer cavity, the cone of the conical bracket is connected to the bottom, the other end of the channel of the source inlet of the inner cavity and the other end of the channel of the exhaust port of the inner cavity are detachably connected to the cone of the conical bracket, and the conical bracket is used to introduce a gaseous precursor into the inner cavity or extract exhaust gas.

9. The dual-chamber atomic layer deposition apparatus according to claim 8, characterized in that: The conical portion of the conical support is provided with a sealing ring.

10. The dual-chamber atomic layer deposition device according to claim 8, characterized in that: The bolts of the conical bracket are fixed to the side wall of the outer cavity.

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