Thin film deposition device, thin film deposition method and thin film deposition equipment

Abstract

The thin film deposition device comprises a processing chamber, and the processing chamber comprises N processing stations distributed in a regular polygon shape and used for thin film deposition; wherein N is greater than or equal to 3; the N process manipulators are respectively arranged between the two adjacent processing stations and are used for conveying the substrates between the two adjacent processing stations; and one end of the process manipulator is rotationally connected with the treatment chamber, and the rotary connection point is located on the middle vertical plane of the connecting line of the circle centers of the two adjacent treatment stations. The substrate is conveyed among the processing stations through the process manipulator, and the area, close to the center of the processing chamber, on the substrate is changed after conveying, so that films deposited on the processing stations can generate a compensation effect, the uniformity of the multiple layers of films deposited on the substrate is improved, and the uniformity of the multiple layers of films deposited on the substrate is improved. And the phenomenon that the etched through hole of the thin film deposited on the substrate deviates from the vertical direction in the subsequent etching process is avoided, so that the stability of the performance of the semiconductor device is further ensured.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing equipment, and particularly to a thin film deposition apparatus, a thin film deposition method, and a thin film deposition equipment. Background Art

[0002] Semiconductor manufacturing often involves using plasma enhanced chemical vapor deposition (PECVD) to deposit one or more material layers onto a heated substrate. Currently, multi-station thin film deposition equipment is widely used. The multi-station design can not only significantly improve the process efficiency of thin film deposition, but also reduce the occupied area in the clean room.

[0003] In existing multi-station thin film deposition equipment, the processing chambers are all designed to be centrosymmetric. Due to the crosstalk between processing stations, process factors such as radio frequency energy and gas flow will have a distribution biased towards the center of the processing chamber, resulting in a thicker thin film in the area of the substrate facing the center of the processing chamber.

[0004] When the number of deposited thin films exceeds 200 layers, the uniformity and quality of the thin films degrade. During the continuous stacking of different types of thin films, the deviation at a fixed position will be continuously amplified, resulting in the deviation of the thin film uniformity on the substrate from the controllable range. This will make it impossible to achieve the accuracy of via etching in the subsequent etching process, resulting in the deviation of the etched via from the vertical direction during the etching process, and further leading to the failure of semiconductor devices. Summary of the Invention

[0005] The purpose of the present invention is to provide a thin film deposition apparatus, a thin film deposition method, and a thin film deposition equipment, which are used to solve the problem of poor uniformity of the thin film deposited on the substrate in the prior art.

[0006] To achieve the above object and other related objects, the present invention provides a thin film deposition apparatus, including a processing chamber, and the processing chamber includes:

[0007] N processing stations distributed in a regular polygon for thin film deposition; where N≥3;

[0008] N process manipulators are respectively arranged between adjacent two processing stations for transferring substrates between adjacent two processing stations; one end of each process manipulator is rotatably connected to the processing chamber, and the rotation connection point is located on the mid-perpendicular plane of the center line connecting the centers of adjacent two processing stations.

[0009] Optionally, the rotation angle of the process manipulator between adjacent two processing stations is 360° / N.

[0010] Optionally, the processing station includes: a heating tray for carrying and heating a substrate; a support member passing through the heating tray for supporting the substrate; and a lifting mechanism for driving the support member to rise or fall to lift the substrate away from the heating tray or the process robot, or place the substrate on the heating tray or the process robot.

[0011] Optionally, the rotation connection point is fixed relative to the processing chamber, and the position of the rotation connection point is higher than that of the processing station.

[0012] Optionally, the rotation connection point can be lifted and lowered relative to the processing chamber, and the rotation connection point is set at any height within the processing chamber.

[0013] Optionally, the number of both the processing stations and the process robots is four.

[0014] Optionally, the support member includes thumbtacks, through holes are formed in the heating tray, and the thumbtacks are arranged in the through holes.

[0015] Optionally, the number of the thumbtacks is three, the number of the through holes is three, and they correspond to the thumbtacks one by one.

[0016] Optionally, the distances between each through hole and the edge of the heating tray are equal, the thumbtacks are arranged in an equilateral triangle distribution, and one of the thumbtacks is a central thumbtack, and the central thumbtack is distributed on the line connecting the center of the processing station and the center of the processing chamber.

[0017] Optionally, the length of the process robot is less than the distance between the rotation connection point and any one of the central thumbtacks on both sides of the process robot.

[0018] Optionally, the length of the process robot is greater than the distance between the rotation connection point and the center of any adjacent processing station.

[0019] The present invention also provides a thin film deposition method, including the following steps:

[0020] S11, putting the substrate into the processing chamber;

[0021] S12, depositing a certain number of layers of thin film on the substrate;

[0022] S13, multiple process robots rotate synchronously to transfer the substrate between two adjacent processing stations respectively;

[0023] S14, when the deposition of the substrate is completed at all processing stations, taking the substrate out of the processing chamber, and repeating steps S11 - S14; otherwise, repeating steps S12 - S14.

[0024] The present application also provides a thin film deposition apparatus, comprising: a substrate loading port for placing a substrate; a buffer device for placing the substrate to be deposited; a front-end manipulator for transporting the substrate between the substrate loading port and the buffer device; the thin film deposition device as described above for depositing a thin film on the substrate; and a transfer manipulator for transporting the substrate between the buffer device and the processing chamber of the thin film deposition device.

[0025] Optionally, a door is provided on the side wall of the processing chamber to allow the transfer manipulator to enter the interior of the processing chamber to place or remove the substrate.

[0026] Optionally, there are a plurality of processing chambers, and the plurality of processing chambers are symmetrically arranged on both sides of the transfer manipulator or sequentially arranged on the outer periphery of the transfer manipulator.

[0027] Optionally, the thin film deposition apparatus further includes a processing module for preheating the substrate or performing surface reduction before deposition, or for performing thin film surface modification after deposition.

[0028] Optionally, there are a plurality of buffer devices, and a transfer manipulator is further provided between two adjacent buffer devices for transporting the substrate between the two buffer devices.

[0029] As described above, the present invention provides a thin film deposition device, a thin film deposition method and a thin film deposition apparatus, which have the following beneficial effects: by using a process manipulator to transfer the substrate between multiple processing stations, the area of the substrate near the center of the processing chamber changes after the transfer, so that the deposited thin films at multiple processing stations can produce a compensation effect, improving the uniformity of the multi-layer thin films deposited on the substrate, and avoiding the phenomenon that the etched vias deviate from the vertical direction during the subsequent etching process of the thin films deposited on the substrate, thereby further ensuring the stability of the performance of semiconductor devices. Description of the Drawings

[0030] Figure 1 Shows a schematic diagram of the thin film deposition device of the present invention;

[0031] Figures 2A to 2C Shows a schematic diagram of different numbers of processing stations in the thin film deposition device of the present invention;

[0032] Figures 3A to 3C Shows a schematic diagram of the process manipulator removing the substrate in the thin film deposition device of the present invention;

[0033] Figures 4A to 4C Shows a schematic diagram of the process manipulator placing down the substrate in the thin film deposition device of the present invention;

[0034] Figure 5Schematic diagram showing the movement trajectory of the process robot in the thin film deposition apparatus of the present invention when transporting a substrate between two processing stations;

[0035] Figures 6A to 6D Schematic diagram showing the process robot in the thin film deposition apparatus of the present invention when transporting a plurality of substrates between a plurality of processing stations;

[0036] Figure 7A and Figure 7B Schematic diagram showing the loading of a substrate in the thin film deposition apparatus of the present invention;

[0037] Figures 8A to 8C Schematic layout diagram of the thin film deposition equipment of the present invention. Detailed implementation manners

[0038] The following uses specific specific examples to illustrate the implementation manners of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation manners. Various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0039] It should be noted that the diagrams provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Although only the components related to the present invention are shown in the diagrams, rather than being drawn according to the number, shape, and size of the components in actual implementation, the forms, numbers, and proportions of the components in actual implementation can be arbitrarily changed, and the layout form of the components may also be more complex. In addition, parts with the same reference numerals shown in multiple drawings represent the same or equivalent parts or components.

[0040] As Figure 1 shown, the present invention provides a thin film deposition apparatus, including a centrally symmetric processing chamber 1 for performing thin film deposition. The processing chamber 1 includes a plurality of sets of corresponding processing stations 101 and process robots 201. A plurality of process robots 201 are respectively arranged between two adjacent processing stations 101 for transporting a substrate w between two adjacent processing stations 101.

[0041] The shape of the processing chamber 1 can be a regular polygon. The number of the processing stations 101 and the process robots 201 corresponds to the number of sides of the processing chamber 1, that is, the processing stations 101 can have at least three. Correspondingly, there are at least three process robots 201. In some embodiments, as Figure 1 shown, the shape of the processing chamber 1 is a square, and rounded corners are made from the perspectives of safety and process. There are four processing stations 101, and correspondingly four process robots 201. In some other embodiments, referring to Figures 2A to 2C , embodiments with three, five, and six processing stations 101 are respectively shown.

[0042] Specifically, as Figure 5 shown, one end of the process robot 201 can be rotatably connected to the processing chamber 1, and the rotation connection point O is located on the perpendicular bisecting plane of the center line connection of the centers of two adjacent processing stations 101. The process robot 201 can be directly arranged on the side wall of the processing chamber 1, or can be arranged at the bottom or top of the processing chamber 1 through a connecting rod. In some embodiments, the rotation connection point O is always fixed relative to the processing chamber 1, and the rotation connection point O is higher than the position of the processing station 101. In other embodiments, the rotation connection point O can be lifted and lowered relative to the processing chamber 1, and the rotation connection point O can be arranged at any height inside the processing chamber 1. The initial position of each process robot 201 is the position in the middle of two adjacent processing stations 101, that is, located on the perpendicular bisecting plane of the center line connection of two adjacent processing stations 101.

[0043] Figure 5 shows the movement trajectory of the process robot 201 between two processing stations 101. During the handling process, the movement trajectory of the process robot 201 is an arc, and the center of this arc is the rotation connection point O between the process robot 201 and the processing chamber 1. In this embodiment, there are four processing stations 101, and the rotation angle of the process robot 201 each time it transports between two processing stations 101 can be 90°. The substrate w is deposited with thin films four times on the four processing stations 101 as a cycle. In this way, the substrate w just rotates 360° after a cycle of thin film deposition, ensuring a uniformly deposited thin film on the substrate w. To ensure the stability of the process robot 201 in supporting the wafer, the length of the process robot 201 can cover beyond the center of the heating tray 11 (such as Figure 5 points A and B in

[0044] In Figure 1 the shown embodiment, the processing chamber 1 includes four processing stations 101A, 101B, 101C, 101D and four process robots 201A, 201B, 201C, 201D. Based on such a configuration of the processing stations 101 and the process robots 201, there can be multiple processing sequences to enable the thin film deposition cycle to be carried out in parallel on multiple substrates w. Figure 1 also shows the process of transporting a substrate w between the four processing stations 101A, 101B, 101C, 101D.

[0045] Referring to Figure 1 , the steps of depositing a thin film on the substrate w in this embodiment are as follows:

[0046] S1: As shown in the upper left figure, load the substrate w to the processing station 101A. After the first thin film deposition, the process robot 201A moves from the initial position to the processing station 101A, transports the substrate w to the processing station 101B, and performs the second thin film deposition;

[0047] S2: As shown in the upper right figure, the process robot 201A returns to the initial position. At the same time, the process robot 201B moves from the initial position to the processing station 101B, transports the substrate w to the processing station 101C, and performs the third thin film deposition;

[0048] S3: As shown in the lower right figure, the process robot 201B returns to the initial position. At the same time, the process robot 201C moves from the initial position to the processing station 101C, transports the substrate w to the processing station 101D, and performs the fourth thin film deposition;

[0049] S4: As shown in the lower left figure, the process robot 201C returns to the initial position. At the same time, the process robot 201D moves from the initial position to the processing station 101D, transports the substrate w to the processing station 101A, and then the process robot 201D returns to the initial position. At this time, a complete thin film deposition cycle is completed, and then the substrate w can be taken out from the processing chamber 1.

[0050] In some other embodiments, the process of thin film deposition and substrate w transfer can be adjusted according to actual process requirements. For example, multiple thin film depositions can also be performed at each processing station 101 before transporting to the next processing station 101; for example, in S4, after the substrate w undergoes thin film deposition at the processing station 101D, it can also be transported to the processing station 101A to perform a thin film deposition cycle between multiple processing stations 101. After multiple cycles, the substrate w is taken out from the processing chamber 1.

[0051] During the process of this thin film deposition cycle, the area of the substrate w near the center of the processing chamber 1 will change as the process robot 201 transports. For example, referring to Figure 1 , as shown in the upper left figure, when the substrate w is located at the processing station 101A, mark the area near the center of the processing chamber 1 as the fan-shaped area S. When the process robot 201A transports the substrate w from the processing station 101A to the processing station 101B, the substrate w rotates together with the process robot 201A. Correspondingly, the area of the substrate w near the center of the processing chamber 1 also changes. For example Figure 1As shown in the upper right figure, when the substrate w is located at the processing station 101B, the fan-shaped area S marked at the processing station 101A has rotated to a position away from the center of the processing chamber 1. In the thin film deposition apparatus provided by the present invention, the process robot 201 transfers the substrate w between multiple processing stations 101. After the transfer, the area of the substrate w close to the center of the processing chamber 1 changes. Therefore, the thin films deposited at multiple processing stations 101 can produce a compensation effect, improving the uniformity of the multiple thin films deposited on the substrate w, and avoiding the phenomenon that the etched through holes deviate from the vertical direction during the subsequent etching process of the thin film on the substrate w, thereby further ensuring the stability of the performance of semiconductor devices.

[0052] The angle of rotation of the process robot 201 between two adjacent processing stations 101 is the angle between the projection of the axis of the process robot 201 on the plane where the processing station 101 is located and the connecting line between the centers of two adjacent processing stations 101. Preferably, the rotation angle of the process robot 201 between two adjacent processing stations 101 is 360° / N, where N is the number of processing stations 101 in the processing chamber 1, so as to save the internal space of the processing chamber 1, thereby reducing the volume of the processing chamber 1 and making full use of the internal space. Moreover, when the substrate w is transferred between multiple processing stations 101, the area of the substrate w originally close to the center of the processing chamber 1 can be rotated to a position away from the center of the processing chamber 1, ensuring the uniformity of the multiple thin films deposited on the substrate w. In some embodiments, the rotation angle of the process robot 201 between two adjacent processing stations 101 can also be 360° / N ± 30°. For example, in Figure 1 the embodiment of the four processing stations 101 shown, the rotation angle can be set to 80°, 100°, etc., and the length of the process robot 201 can be configured according to the rotation angle.

[0053] Each processing station 101 is provided with a heating tray 11, a support member, and a lifting mechanism. The heating tray 11 is used to carry and heat the substrate w. The support member is used to support the substrate w. The lifting mechanism is connected to the support member and is used to drive the support member to rise or fall in the vertical direction to lift the substrate w away from the heating tray 11 or place the substrate w on the heating tray 11.

[0054] In some embodiments, the support member is usually a thimble 12. Through holes are formed in the heating tray 11, and the thimble 12 is arranged in the through holes. There can be three thimbles 12. Correspondingly, there are three through holes, which correspond to the thimbles 12 one by one. The distances between the through holes and the edge of the heating tray 11 are equal and can be distributed in the shape of a regular polygon to ensure the stability of the thimble 12 when supporting the substrate w. For example Figure 5 and Figure 7AAmong them, the three ejector pins 12 are arranged in an equilateral triangle distribution. Specifically, one of the three ejector pins 12 is distributed on the line connecting the center of the processing station 101 and the center of the processing chamber 1. Correspondingly, one ejector pin 12 in each of the four processing stations 101 is distributed on the line connecting the processing station 101 and the center of the processing chamber 1.

[0055] In some embodiments, in order to avoid interference between the process robot 201 and the ejector pin 12 during the handling process, the length of the process robot 201 cannot be too long. Specifically, as Figure 5 shown, in the processing stations 101 on both sides of the process robot 201, there are two central ejector pins 12A respectively located on the line connecting the processing station 101 and the center of the processing chamber 1. The process robot 201 needs to avoid these two central ejector pins 12A during the handling process, so its length is less than the distance between the rotation connection point O and these two central ejector pins 12A.

[0056] Figures 3A to 3C Illustrates the process of the process robot 201 taking out the substrate w. Refer to Figure 3A , in the initial state, the ejector pin 12 is below the surface of the heating tray 11, and the substrate w is on the heating tray 11; refer to Figure 3B , the lifting mechanism drives the ejector pin 12 to rise, extending out of the surface of the heating tray 11, lifting the substrate w, and the process robot 201 moves below the substrate w; among them, the movement of the process robot 201 and the rise of the ejector pin 12 can be carried out simultaneously or sequentially; refer to Figure 3C , the lifting mechanism drives the ejector pin 12 to descend below the surface of the heating tray 11, so that the substrate w falls on the process robot 201 to be transported to the next processing station 101.

[0057] Figures 4A to 4C Illustrates the process of the process robot 201 putting down the substrate w. Refer to Figure 4A , the process robot 201 has transported the substrate w to the next processing station 101. At this time, the ejector pin 12 is below the surface of the heating tray 11, and the process robot 201 holds the substrate w; refer to Figure 4B , the lifting mechanism drives the ejector pin 12 to rise until it is higher than the position of the process robot 201, so that the substrate w falls on the ejector pin 12; refer to Figure 4C , the process robot 201 moves out of this processing station 101, and the lifting mechanism drives the ejector pin 12 to descend below the surface of the heating tray 11, so that the substrate w falls on the heating tray 11; among them, the movement of the process robot 201 and the descent of the ejector pin 12 can be carried out simultaneously or sequentially.

[0058] Figures 6A to 6D Illustrates the process of the process robot 201 transporting multiple substrates w between multiple processing stations 101. Now refer to Figures 3A - 3C ,Figures 4A - 4C and Figures 6A - 6D describe this process. Figure 6A shows the initial state before each process robot 201 transports the substrate w. Each process robot 201 is located on the mid-perpendicular plane of the central connection line of two adjacent heating trays 11. The ejector pins 12 are below the surface of the heating trays 11, and the substrate w is on the heating trays 11. Figure 6B shows the process of the process robot 201 taking out the substrate w. The ejector pins 12 rise and are higher than the process robot 201. The ejector pins 12 lift the substrate w; the process robot 201 moves below the substrate w, and the ejector pins 12 descend below the surface of the heating trays 11, and the substrate w lands on the process robot 201. Refer to Figure 6C , each process robot 201 rotates simultaneously to transport the substrate w to the next adjacent heating tray 11; the ejector pins 12 rise, higher than the process robot 201, and lift the substrate w. Refer to Figure 6D , each process robot 201 returns to the initial position, and the ejector pins 12 descend below the surface of the heating trays 11, so the substrate w lands on the heating trays 11. In an embodiment where the process robot 201 can move up and down relative to the processing chamber 1, when transporting the substrate w between multiple processing stations 101, it is necessary to raise or lower the process robot 201 from the initial height to a position between the heating trays 11 and the ejector pins 12 to lift the substrate w, and after the transportation is completed, lower or raise the process robot 201 to the initial height.

[0059] As Figures 8A to 8C , the present invention also provides a thin film deposition device, including: a substrate loading port 100 for placing the substrate w; a buffer device 200 for placing the substrate w to be deposited; a front-end robot 300 for transporting the substrate w between the substrate loading port 100 and the buffer device 200; the thin film deposition device in the above embodiment for performing thin film deposition on the substrate w; a handling robot 400 for transporting the substrate w between the buffer device 200 and the processing chamber 1 of the thin film deposition device.

[0060] Specifically, the front-end robot 300 takes out the substrate w to be deposited from the substrate loading port 100 and places it on the buffer device 200; the handling robot 400 takes out the substrate w from the buffer device 200 and places it in the processing chamber 1 of the thin film deposition device to perform thin film deposition on the surface of the substrate w; after the thin film deposition is completed, the handling robot 400 takes out the substrate w from the processing chamber 1 and places it on the buffer device 200; the front-end robot 300 takes out the substrate w from the buffer device 200 and puts it back into the substrate loading port 100 to complete the process operation of the thin film deposition device.

[0061] Among them, a door is provided on the side wall of the processing chamber 1 for the handling robot 400 to enter the interior of the processing chamber 1 to place or remove the substrate w before and after the thin film deposition process on the substrate w. As Figure 7A , 7B shown, one or two doors 13 may be provided on the side wall of the processing chamber 1, and the number of handling robots 400 may correspond to the number of doors 13, that is, a single-export processing chamber 1 is correspondingly provided with one handling robot 400, and a double-export processing chamber 1 is correspondingly provided with two handling robots 400.

[0062] In some embodiments, as Figures 8A to 8B shown, the processing chamber 1 of the thin film deposition device may be provided in multiple numbers, and the multiple processing chambers 1 are arranged in sequence on the outer periphery of the handling robot 400.

[0063] Referring to Figure 8A , the thin film deposition equipment may further include a processing module 500 for preheating or surface reduction of the substrate w before deposition, or for thin film surface modification after deposition.

[0064] Based on the overall operating speed of the equipment, optionally, the thin film deposition equipment is provided with multiple buffer devices 200. Correspondingly, more handling robots 400 and processing chambers 1 may also be provided. As Figure 8C shown, the thin film deposition equipment is provided with two buffer devices 200, and a handling robot 400 is provided between the two buffer devices 200 for handling the substrate w between the two buffer devices 200. Two processing chambers 1 are also provided on both sides of the handling robot 400, and the handling robot 400 can enter the interior of the processing chamber 1 to place or remove the substrate w.

[0065] The above embodiments merely illustrate the principles and effects of the present invention and are not intended to limit the present invention. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed by the present invention should still be covered by the claims of the present invention.

Claims

1. A thin film deposition apparatus, comprising a processing chamber, characterized in that, The processing chamber includes: N processing stations distributed in a regular polygon for thin film deposition, where N≥3; N process manipulators are respectively arranged between two adjacent processing stations for transferring substrates between two adjacent processing stations; one end of each process manipulator is rotatably connected to the processing chamber, and the rotation connection point is located on the mid-perpendicular plane of the center line connecting the centers of two adjacent processing stations.

2. The thin film deposition apparatus according to claim 1, wherein The rotation angle of the process manipulator between two adjacent processing stations is 360° / N.

3. The thin film deposition apparatus according to claim 1, wherein The processing station includes: A heating tray for carrying and heating the substrate; A support member inserted into the heating tray for supporting the substrate; A lifting mechanism for driving the support member to rise or fall to lift the substrate away from the heating tray or the process manipulator, or place the substrate on the heating tray or the process manipulator.

4. The thin film deposition apparatus according to claim 1, wherein The rotation connection point is fixed relative to the processing chamber, and the position of the rotation connection point is higher than the processing station.

5. The thin film deposition apparatus according to claim 1, characterized in that, The rotation connection point can be lifted and lowered relative to the processing chamber, and the rotation connection point is set at any height inside the processing chamber.

6. The thin film deposition apparatus according to claim 1, wherein The number of both the processing stations and the process manipulators is four.

7. The thin film deposition apparatus according to claim 3, characterized in that, The support member includes thimbles, through holes are formed on the heating tray, and the thimbles are arranged in the through holes.

8. The thin film deposition apparatus according to claim 7, characterized in that, The number of the thimbles is three, the number of the through holes is three, and they correspond to each other one by one.

9. The thin film deposition apparatus according to claim 8, wherein, The distances between each through hole and the edge of the heating tray are equal, the thimbles are arranged in an equilateral triangle distribution, and one of the thimbles is a central thimble which is distributed on the line connecting the center of the processing station and the center of the processing chamber.

10. The thin film deposition apparatus according to claim 9, wherein The length of the process manipulator is less than the distance between the rotation connection point and any central thimble on both sides of the process manipulator.

11. The thin film deposition apparatus according to claim 10, wherein, The length of the process manipulator is greater than the distance between the rotation connection point and the center of any adjacent processing station.

12. A thin film deposition method, characterized in that, It includes the following steps: S11, putting the substrate into the processing chamber; S12, depositing a certain number of layers of thin film on the substrate; S13, multiple process manipulators rotate synchronously to transfer substrates between two adjacent processing stations respectively; S14, when the substrate is deposited on all processing stations, taking the substrate out of the processing chamber and repeating steps S11 - S14; otherwise, repeating steps S12 - S14.

13. A thin film deposition device, characterized in that, It includes: A substrate loading port for placing the substrate; A buffer device for placing the substrate to be deposited; A front-end manipulator for transporting the substrate between the substrate loading port and the buffer device; The thin film deposition device according to any one of claims 1 - 11 for depositing a thin film on the substrate; A handling manipulator for transporting the substrate between the buffer device and the processing chamber of the thin film deposition device.

14. The thin film deposition apparatus according to claim 13, wherein, A door is arranged on the side wall of the processing chamber to allow the handling manipulator to enter the interior of the processing chamber to place or take out the substrate.

15. The thin film deposition apparatus according to claim 13, wherein, There are multiple processing chambers, and the multiple processing chambers are symmetrically arranged on both sides of the handling manipulator or are arranged in sequence on the outer periphery of the handling manipulator.

16. The thin film deposition apparatus according to claim 13, wherein, It further includes a processing module for preheating or surface reduction of the substrate before deposition, or for surface modification of the thin film after deposition.

17. The thin film deposition apparatus according to claim 13, wherein, There are multiple said buffer devices, and a handling robot is further provided between two adjacent buffer devices for handling substrates between the two buffer devices.

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