Display device manufacturing apparatus and display device manufacturing method

Abstract

A display device manufacturing apparatus and a display device manufacturing method are provided. The display device manufacturing apparatus includes a chamber, a susceptor disposed in the chamber and supporting a display substrate, a head unit disposed in the chamber and injecting a purge gas into the chamber, a purge gas supply unit supplying the purge gas to the head unit, a pressure adjustment unit adjusting a pressure in the chamber, and a control unit determining an end point of purge.

Description

[0001] Cross - reference to related applications

[0002] This application is based on and claims priority to Korean Patent Application No. 10 - 2023 - 0182085, filed with the Korean Intellectual Property Office on December 14, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical field

[0003] One or more embodiments relate to apparatuses and methods, and more particularly, to an apparatus for manufacturing a display device and a method for manufacturing a display device. Background art

[0004] Mobility - based electronic devices have been widely used. In addition to small - sized electronic devices such as mobile phones, tablet personal computers (PCs) have recently been widely used as mobile electronic devices.

[0005] Such mobile electronic devices include a display device for providing visual information such as images or videos to a user to support various functions. Recently, as other parts for driving the display device have been miniaturized, the proportion of the display device in the electronic device has gradually increased, and a structure capable of bending at a certain angle from a flat state has also been developed. Summary of the invention

[0006] One or more embodiments include improving the accuracy of determining an end point of cleaning in a chamber.

[0007] However, this object is only an example, and the objects of the present disclosure are not limited thereto.

[0008] Additional aspects will be set forth in part in the description below, and in part will be apparent from the description, or may be learned by practice of the embodiments presented in the present disclosure.

[0009] According to one or more embodiments, a display device manufacturing apparatus includes: a chamber, a base disposed in the chamber and supporting a display substrate, a head unit disposed in the chamber and spraying a cleaning gas into the chamber, a cleaning gas supply unit supplying the cleaning gas to the head unit, a pressure regulating unit regulating the pressure in the chamber, and a control unit determining an end point of the cleaning, wherein the pressure regulating unit includes a guiding pipe connected to the chamber and including a pipe flow path communicating with the interior of the chamber, a pressure regulating pump connected to the guiding pipe and applying a specified pressure to the pipe flow path so that the gas in the chamber flows to the outside thereof, and a pressure regulating valve connected to the guiding pipe and opening or closing the pipe flow path so that the pressure in the chamber is within a first specified range, wherein the control unit calculates an opening ratio which is a ratio of a cross-sectional area of a channel opening opened by the pressure regulating valve to a cross-sectional area of the pipe flow path, and determines that the cleaning has ended when a per-hour change amount of the opening ratio is within a second specified range.

[0010] In the present embodiment, when it is determined that the cleaning has ended, the control unit may control the cleaning gas supply unit to stop supplying the cleaning gas to the head unit.

[0011] In the present embodiment, the control unit may determine that the cleaning has ended when the opening ratio sequentially satisfies a first period in which the per-hour change amount of the opening ratio is positive, a second period in which the per-hour change amount of the opening ratio is negative, a third period in which the per-hour change amount of the opening ratio is positive, and a fourth period in which the per-hour change amount of the opening ratio is within the second specified range.

[0012] In the present embodiment, in the fourth period, the per-hour change amount of the opening ratio may be 0.

[0013] In the present embodiment, as the conversion from the first period to the second period occurs, a cleaned portion of the head unit may gradually move away from its central axis.

[0014] In the present embodiment, as the conversion from the second period to the third period occurs, the cleaning of the head unit may be completed.

[0015] In the present embodiment, the display device manufacturing apparatus may further include a process gas supply unit supplying a process gas to the head unit, wherein the head unit may spray the process gas into the chamber.

[0016] In the present embodiment, when it is determined that the cleaning has ended, the control unit may control the process gas supply unit to supply the process gas to the head unit.

[0017] In the present embodiment, the display device manufacturing apparatus may further include a sensing unit disposed in the chamber to sense the pressure in the chamber, wherein the pressure regulating valve may open or close the pipe flow path based on information sensed by the sensing unit.

[0018] In the present embodiment, the display device manufacturing apparatus may further include a mask disposed in the chamber and including a deposition area disposed above the display substrate.

[0019] According to one or more embodiments, a display device manufacturing method includes: transporting a display substrate onto a pedestal disposed in a chamber to the outside of the chamber, supplying a cleaning gas to a head unit through a cleaning gas supply unit, ejecting the cleaning gas into the chamber through the head unit, a pressure regulating operation of regulating the pressure in the chamber through a pressure regulating unit, and determining an end point of cleaning through a control unit, wherein the pressure regulating operation includes applying a specified pressure to a pipe flow path through a pressure regulating pump disposed at a guiding pipe including a pipe flow path communicating with the inside of the chamber, and opening or closing the pipe flow path through a pressure regulating valve connected to the guiding pipe so that the pressure in the chamber is within a first specified range, wherein the control unit calculates an opening ratio that is a ratio of a cross-sectional area of a channel opening opened by the pressure regulating valve to a cross-sectional area of the pipe flow path and determines that the cleaning has ended when a change amount per hour of the opening ratio is within a second specified range.

[0020] In the present embodiment, when it is determined that the cleaning has ended, the control unit may control the cleaning gas supply unit to stop supplying the cleaning gas to the head unit.

[0021] In the present embodiment, the control unit may determine that the cleaning has ended when the opening ratio sequentially satisfies a first period in which a change amount per hour of the opening ratio is positive, a second period in which a change amount per hour of the opening ratio is negative, a third period in which a change amount per hour of the opening ratio is positive, and a fourth period in which a change amount per hour of the opening ratio is within a second specified range.

[0022] In the present embodiment, in the fourth period, the change amount per hour of the opening ratio may be 0.

[0023] In the present embodiment, as the transition is made from the first period to the second period, a portion of the head unit to be cleaned may gradually move away from its central axis.

[0024] In the present embodiment, as the transition is made from the second period to the third period, the cleaning of the head unit may be completed.

[0025] In the present embodiment, the display device manufacturing method may further include supplying a process gas to the head unit through a process gas supply unit, and ejecting the process gas into the chamber through the head unit.

[0026] In the present embodiment, when it is determined that the cleaning has ended, the control unit may control the process gas supply unit to supply the process gas to the head unit.

[0027] In the present embodiment, the method of manufacturing a display device may further include sensing a pressure in a chamber by a sensing unit disposed in the chamber, wherein a pressure regulating valve may open or close a tube flow path based on information sensed by the sensing unit.

[0028] In the present embodiment, the method of manufacturing a display device may further include providing a mask disposed in the chamber and including a deposition region disposed over a display substrate.

[0029] Based on the drawings, the appended claims, and the detailed description of the present disclosure, other aspects, features, and advantages other than those described above will be apparent. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other aspects, features, and advantages of certain embodiments of the present disclosure will become more apparent from the following description taken in conjunction with the drawings, in which:

[0031] Figures 1 to 3 is a schematic cross-sectional view of a display device manufacturing apparatus according to an embodiment;

[0032] Figure 4 is a cross-sectional view of a part of a pressure regulating unit according to an embodiment;

[0033] Figure 5 is a diagram showing a graph representing an opening ratio changing over time;

[0034] Figure 6 is a flowchart showing a method of manufacturing a display device according to an embodiment;

[0035] Figure 7 is a plan view schematically showing a display device according to an embodiment;

[0036] Figure 8 is a cross-sectional view schematically showing a display device according to an embodiment; and

[0037] Figure 9 is an equivalent circuit diagram of a pixel of a display device according to an embodiment. DETAILED DESCRIPTION

[0038] Reference will now be made in detail to the embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout. In this regard, the present embodiments may have different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments will be described only by referring to the drawings to explain aspects of the present description. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the present disclosure, the expression "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0039] The present disclosure may include various embodiments and modifications, and specific embodiments thereof will be illustrated in the accompanying drawings and described in detail herein. Referring to the embodiments described in detail below in conjunction with the accompanying Figure 1 drawings, the effects and features of the present disclosure and the methods for achieving them will become apparent. However, the present disclosure is not limited to the embodiments described below and may be implemented in various forms.

[0040] Hereinafter, the embodiments will be described in detail with reference to the accompanying drawings. In the following description, like reference numerals will denote like elements, and redundant descriptions thereof will be omitted for brevity.

[0041] It should be understood that although terms such as "first" and "second" may be used herein to describe various elements, these elements should not be limited by these terms, and these terms are only used to distinguish one element from another.

[0042] Unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" as used herein are also intended to include the plural forms.

[0043] It should be understood that terms such as "comprising", "including", and "having" as used herein specify the presence of the stated features or elements, but do not preclude the presence or addition of one or more other features or elements.

[0044] It should be understood that when a layer, region, or component is referred to as being "on" another layer, region, or component, it may be "directly on" the other layer, region, or component, or may be "indirectly on" the other layer, region, or component with one or more intervening layers, regions, or components therebetween.

[0045] For convenience of description, the sizes of the components in the accompanying drawings may be enlarged or reduced. In other words, since the sizes and shapes of the components in the accompanying drawings are arbitrarily shown for convenience of description, the present disclosure is not limited thereto.

[0046] In addition, in this document, the X-axis, Y-axis, and Z-axis are not limited to the three axes of a rectangular coordinate system and can be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0047] When a specific embodiment can be implemented differently, the specific process sequence can be executed differently from the described sequence. For example, two consecutively described processes can be executed substantially simultaneously or in an order opposite to the described order.

[0048] Figures 1 to 3 is a schematic cross-sectional view of a display device manufacturing apparatus 1 according to an embodiment.

[0049] Referring to Figures 1 to 3 , the display device manufacturing apparatus 1 can manufacture a display device. The display device manufacturing apparatus 1 can include a chamber 11, an opening / closing unit 12, a first support unit 13, a base 14, a mask 15, a second support unit 16, a masking frame 17, a third support unit 18, a head unit 19, an electrode unit 20, a process gas supply unit 21, a cleaning gas supply unit 22, a cleaning gas injection unit 23, a pressure regulating unit 24, a sensing unit 25, and a control unit (not shown).

[0050] The chamber 11 can provide an internal space. The internal space provided by the chamber 11 can be sealed. In Figures 1 to 3 , the cross-sectional shape of the chamber 11 is shown as a square shape; however, this is only an example, and the shape of the chamber 11 is not limited thereto.

[0051] The chamber 11 can be a chamber for chemical vapor deposition or plasma chemical vapor deposition. Alternatively, the chamber 11 can be a chamber for atomic layer deposition or plasma atomic layer deposition. Alternatively, the chamber 11 can be a chamber for selectively performing chemical vapor deposition (or plasma chemical vapor deposition) and atomic layer deposition (or plasma atomic layer deposition). Hereinafter, a detailed description will be given focusing on the case where the chamber 11 is a chamber for plasma chemical vapor deposition.

[0052] The opening / closing unit 12 can be disposed on one side of the chamber 11. The opening / closing unit 12 can selectively open / close the chamber 11. For example, the opening / closing unit 12 can include a gate valve. When the chamber 11 is opened by the opening / closing unit 12, a robotic arm can transport the display substrate DS into the interior of the chamber 11 or transport the display substrate DS out of the interior of the chamber 11.

[0053] The base 14 can be arranged in the chamber 11 and can support one surface of the display substrate DS. The base 14 and the display substrate DS can be in surface contact with each other. The base 14 can linearly move in a first direction (e.g., the +Z-axis direction) and a second direction (e.g., the -Z-axis direction) opposite to the first direction. As the base 14 moves in the first direction (e.g., the +Z-axis direction), the display substrate DS can be placed on the base 14, and as the base 14 moves in the second direction (e.g., the -Z-axis direction), the display substrate DS can be separated from the base 14.

[0054] The first support unit 13 can be arranged in the chamber 11 and can support one surface of the display substrate DS. The first support unit 13 can linearly move in a first direction (e.g., the +Z-axis direction) and a second direction (e.g., the -Z-axis direction). The first support unit 13 can be provided as a plurality of first support units 13, and each of the plurality of first support units 13 can contact the display substrate DS at a position adjacent to the edge of the display substrate DS. A plurality of holes can be arranged in the base 14, and the plurality of first support units 13 can respectively pass through the plurality of holes arranged in the base 14. For example, the first support unit 13 can be provided in a shape extending in the first direction (e.g., the +Z-axis direction). However, this is only an example, and the shape of the first support unit 13 is not limited thereto, and the first support unit 13 can be provided in a "T" shape.

[0055] The mask 15 can be arranged in the chamber 11 and can include a deposition area arranged above the display substrate DS. A plurality of holes can be arranged in the deposition area of the mask 15. Thus, the deposition material can be deposited on the display substrate DS by passing through the plurality of holes arranged in the deposition area of the mask 15.

[0056] The second support unit 16 can be arranged in the chamber 11 and can support one surface of the mask 15. The second support unit 16 can linearly move in a first direction (e.g., the +Z-axis direction) and a second direction (e.g., the -Z-axis direction). As the second support unit 16 moves, the mask 15 supported by the second support unit 16 can also move together. That is, the mask 15 can linearly move in a first direction (e.g., the +Z-axis direction) and a second direction (e.g., the -Z-axis direction).

[0057] The second support unit 16 may be provided as a plurality of second support units 16, and each of the plurality of second support units 16 may contact the mask 15 at a position adjacent to the edge of the mask 15. A plurality of holes may be arranged on the base 14, and the plurality of second support units 16 may respectively pass through the plurality of holes arranged in the base 14. For example, the second support unit 16 may be provided in a shape extending in the first direction (e.g., the +Z axis direction). One end of the second support unit 16 that contacts the mask 15 may include a curved surface. Thus, the second support unit 16 and the mask 15 may be in point contact with each other. However, this is only an example, and the shape of the second support unit 16 is not limited thereto. The second support unit 16 may include a separate driving unit or alignment unit to adjust the fine position of the mask 15.

[0058] The masking frame 17 may be arranged in the chamber 11 and may be arranged above the mask 15 to overlap the mask 15. One surface of the masking frame 17 may be supported by the mask 15. As the mask 15 moves, the masking frame 17 supported by the mask 15 may also move together. That is, the masking frame 17 may linearly move in the first direction (e.g., the +Z axis direction) and the second direction (e.g., the -Z axis direction).

[0059] The third support unit 18 may be arranged in the chamber 11 and may support the lower surface (e.g., the surface facing the -Z axis direction) of the masking frame 17. The third support unit 18 may be fixed to the chamber 11. The third support unit 18 may contact the masking frame 17 at a position adjacent to the edge of the masking frame 17.

[0060] The head unit 19 may be arranged in the chamber 11 to supply a process gas and a cleaning gas into the chamber 11. In this case, the head unit 19 may include a storage space 193 in which the process gas or the cleaning gas is stored. The head unit 19 may include a head main body unit 191 connected to the process gas supply unit 21 and the cleaning gas supply unit 22. In addition, the head unit 19 may include a nozzle unit 192 that is connected to the process gas supply unit 21 and the cleaning gas supply unit 22 and connects the storage space 193 to the inside of the chamber 11, and the process gas or the cleaning gas is ejected through the nozzle unit 192.

[0061] The electrode unit 20 may be arranged at the head unit 19. For example, the electrode unit 20 may be provided as a plurality of electrode units 20 located at the nozzle unit 192. In another embodiment, the electrode unit 20 may be inserted into at least one of the nozzle unit 192 and the head main body unit 191. Hereinafter, for the convenience of description, the case where the plurality of electrode units 20 are inserted into the nozzle unit 192 will be focused on to describe the electrode unit 20 in detail.

[0062] The process gas supply unit 21 may be disposed outside the chamber 11 and connected to the head unit 19. In this case, the process gas supply unit 21 may supply a process gas to the storage space 193 of the head unit 19. In this case, the process gas may be supplied to the head unit 19 to form one of an amorphous silicon (a-Si) layer, a silicon nitride (SiN x ) layer, and a silicon oxide (SiO x ) layer. For example, the process gas may include silane gas (SiH4), hydrogen gas (H2), ammonia gas (NH3), a gas containing a doping element, and / or the like. In addition, the process gas may include a carrier gas such as argon (Ar), helium (He), or nitrogen (N2). In this case, the type of layer that can be formed with the process gas may be changed according to which gas is selected as the process gas. Hereinafter, for the convenience of description, a detailed description will be given focusing on the case where the process gas includes silane and nitrogen.

[0063] The above-described process gas supply unit 21 may be provided as a plurality of process gas supply units 21. In this case, the plurality of process gas supply units 21 may independently supply their respective process gases to the head unit 19 by being connected to the head unit 19 while separately storing their respective process gases.

[0064] The above-described process gas supply unit 21 may include a process gas storage unit 211 that stores a process gas, and a process gas guiding pipe 212 that connects the process gas storage unit 211 to the head unit 19 and guides the process gas from the process gas storage unit 211 to the storage space 193 of the head unit 19. In addition, the process gas supply unit 21 may include a process gas pump 213 and a process gas blocking valve 214. The process gas pump 213 is disposed in the process gas guiding pipe 212 to allow the process gas to flow, and the process gas blocking valve 214 blocks or allows the process gas moving through the process gas guiding pipe 212 to pass.

[0065] The cleaning gas supply unit 22 may be separately connected to the head unit 19 from the process gas supply unit 21. In this case, the cleaning gas supply unit 22 may supply a cleaning gas to the head unit 19. In particular, the cleaning gas supply unit 22 may convert the cleaning gas into plasma and supply the plasma cleaning gas to the head unit 19. In this case, the cleaning gas may include nitrogen trifluoride (NF3).

[0066] The cleaning gas supply unit 22 may include a cleaning gas storage unit 221 that stores a cleaning gas. The cleaning gas supply unit 22 may include a cleaning gas supply pipe 222 that connects the cleaning gas storage unit 221 to the head unit 19 and guides the cleaning gas from the cleaning gas storage unit 221 to the head unit 19. In addition, the cleaning gas supply unit 22 may include a plasma generation unit 223 disposed in the cleaning gas supply pipe 222 to convert the cleaning gas into plasma. The cleaning gas supply unit 22 may include an insulating unit 224 disposed in at least a portion of the cleaning gas supply pipe 222. The cleaning gas supply unit 22 may include a cleaning gas pump 225 and a cleaning gas blocking valve 226. The cleaning gas pump 225 is disposed in the cleaning gas supply pipe 222 to allow the cleaning gas to flow, and the cleaning gas blocking valve 226 selectively blocks the cleaning gas flowing through the cleaning gas supply pipe 222.

[0067] The plasma generation unit 223 may have a space formed therein, and electrodes may be disposed therein. In this case, the plasma generation unit 223 may be disposed outside the chamber 11. When the cleaning gas passes through the plasma generation unit 223, a high voltage may be applied to the electrodes to convert the cleaning gas into plasma. The cleaning gas supply pipe 222 may guide the plasma cleaning gas from the plasma generation unit 223 to the head unit 19. In addition, the insulating unit 224 may insulate the plasma generation unit 223 and may insulate the cleaning gas supply pipe 222 and the head unit 19.

[0068] The cleaning gas injection unit 23 may be disposed at the head unit 19. In particular, the cleaning gas injection unit 23 may be inserted into the head main body unit 191. In this case, the cleaning gas injection unit 23 may supply the cleaning gas supplied from the cleaning gas supply unit 22 to at least two different portions of the head main body unit 191. For example, the cleaning gas injection unit 23 may supply the cleaning gas to the central portion of the head main body unit 191 and another portion of the head main body unit 191 that is not the central portion of the head main body unit 191.

[0069] The above-described cleaning gas injection unit 23 may include a first cleaning gas injection unit 231 connected to the cleaning gas supply unit 22 to supply cleaning gas to the central portion of the head main body unit 191. In addition, the cleaning gas injection unit 23 may include a second cleaning gas injection unit 232 connected to the cleaning gas supply unit 22 to supply cleaning gas to a portion of the head main body unit 191 that is not the central portion of the head main body unit 191. In this case, the second cleaning gas injection unit 232 may be provided as a plurality of second cleaning gas injection units 232. At least two of the plurality of second cleaning gas injection units 232 may be arranged symmetrically with respect to each other relative to the first cleaning gas injection unit 231. In addition, the plurality of second cleaning gas injection units 232 may be arranged at a certain angle with respect to the first cleaning gas injection unit 231. In this case, each of the second cleaning gas injection units 232 may be arranged at the same distance from the first cleaning gas injection unit 231. In this case, the second cleaning gas injection units 232 may be arranged to be separated from the first cleaning gas injection unit 231 in one of the X-axis direction and the Y-axis direction of Figure 1 In one of the X-axis direction and the Y-axis direction, the second cleaning gas injection units 232 are separated from the first cleaning gas injection unit 231.

[0070] The pressure regulating unit 24 may be connected to the chamber 11 to discharge the gas in the chamber 11 to the outside, thereby regulating the pressure in the chamber 11. The pressure regulating unit 24 may include a guide pipe 241, a pressure regulating pump 242, and a pressure regulating valve 243.

[0071] The guide pipe 241 may be connected to the chamber 11. The guide pipe 241 may include a pipe flow path 2411 (see Figure 4 ) that communicates with the inside of the chamber 11. The gas in the chamber 11 may flow through the pipe flow path 2411.

[0072] The pressure regulating pump 242 may be connected to the guide pipe 241. The pressure regulating pump 242 may apply a specified pressure to the pipe flow path 2411 so that the gas in the chamber 11 flows to the outside.

[0073] The pressure regulating valve 243 may be connected to the guide pipe 241. The pressure regulating valve 243 may open or close the pipe flow path 2411 so that the pressure in the chamber 11 is within a specified range. The gas in the chamber 11 may sequentially pass through the pressure regulating valve 243 and the pressure regulating pump 242.

[0074] The sensing unit 25 may include a pressure sensor and may sense the pressure in the chamber 11. The sensing unit 25 may be arranged in the chamber 11. The pressure regulating valve 243 may open or close the pipe flow path 2411 based on the information sensed by the sensing unit 25.

[0075] A control unit (not shown) can control at least one of the opening / closing unit 12, the first support unit 13, the base 14, the mask 15, the second support unit 16, the masking frame 17, the third support unit 18, the head unit 19, the electrode unit 20, the process gas supply unit 21, the cleaning gas supply unit 22, the cleaning gas injection unit 23, the pressure regulating unit 24, and the sensing unit 25. A detailed description of the control unit (not shown) will be given below.

[0076] Referring to Figure 1 , the display substrate DS can be disposed in the chamber 11. The second support unit 16 can move in a first direction (e.g., the +Z-axis direction), and the base 14 can move in a second direction (e.g., the -Z-axis direction). As the second support unit 16 moves in the first direction (e.g., the +Z-axis direction), the mask 15 supported by the second support unit 16 and the masking frame 17 supported by the mask 15 can also move in the first direction (e.g., the +Z-axis direction). In addition, as the base 14 moves in the second direction (e.g., the -Z-axis direction), the first support unit 13 can also move in the second direction (e.g., the -Z-axis direction). The end of the first support unit 13 can be positioned above the upper surface of the base 14. The opening / closing unit 12 can open the chamber 11, and the display substrate DS can be placed on the first support unit 13 through the opening / closing unit 12. That is, the display substrate DS and the end of the first support unit 13 can be in contact with each other.

[0077] Referring to Figure 2 , a deposition material can be deposited on the display substrate DS. When the display substrate DS is placed on the first support unit 13, the base 14 can move in a first direction (e.g., the +Z-axis direction). As the base 14 moves in the first direction (e.g., the +Z-axis direction), the display substrate DS can also move in the first direction (e.g., the +Z-axis direction) while being supported by the base 14, and the first support unit 13 can also move in the first direction (e.g., the +Z-axis direction) together with the base 14. In addition, the base 14 and the mask 15 can be in contact with each other, the mask 15 can move in the first direction (e.g., the +Z-axis direction) while being supported by the base 14, and the masking frame 17 can also move in the first direction (e.g., the +Z-axis direction) while being supported by the mask 15. In this case, the second support unit 16 can remain stationary, and thus, the second support unit 16 and the mask 15 can be separated from each other.

[0078] The process gas supply unit 21 can supply a process gas to the head unit 19. In this case, a voltage can be applied to the electrode unit 20 to convert the process gas into plasma, and some of the plasma process gas can be deposited on the display substrate DS. In this case, the display device manufacturing apparatus 1 can form one of the respective layers (or films) of the display substrate DS. For example, the display device manufacturing apparatus 1 can form an amorphous silicon layer on the display substrate DS. In another embodiment, the display device manufacturing apparatus 1 can also form an inorganic layer among the thin film encapsulation layers on the display substrate DS. Hereinafter, for convenience of description, the case of forming an inorganic layer among the thin film encapsulation layers on the display substrate DS will be focused on to describe the display device manufacturing apparatus 1 in detail.

[0079] As described above, while performing the process of depositing a part of the process gas on the display substrate DS, the pressure regulating unit 24 can discharge the gas in the chamber 11 to the outside. The pressure regulating valve 243 can open or close the pipe flow path 2411 so that the pressure in the chamber 11 is within a specified range.

[0080] Referring to Figure 3 , the second support unit 16 and the base 14 can move in the second direction (e.g., -Z axis direction). As the second support unit 16 moves in the second direction (e.g., -Z axis direction), the mask 15 supported by the second support unit 16 and the masking frame 17 supported by the mask 15 can also move in the second direction (e.g., -Z axis direction). As the masking frame 17 moves in the second direction (e.g., -Z axis direction), the masking frame 17 can contact the third support unit 18. That is, as the masking frame 17 is supported by the third support unit 18, the masking frame 17 can move only to the position where it contacts the third support unit 18 in the second direction (e.g., -Z axis direction). The display substrate DS having the deposition material deposited thereon can be transported to the outside through the opening / closing unit 12, and a new display substrate DS can be transported into the interior of the chamber 11. The process described with reference to Figure 1 can be repeated again.

[0081] The above process can be repeated multiple times. In the case of performing the above operations multiple times, the display device manufacturing apparatus 1 can perform a cleaning process when a preset number of times is reached.

[0082] In particular, in the case where a process gas is supplied to deposit a part of the process gas onto the display substrate DS, in addition to the display substrate DS, a part of the process gas may be adsorbed onto the chamber 11, the susceptor 14, the head unit 19, and / or the like. In this case, when a new display substrate DS is deposited later, due to the fall of foreign matter, the mixing of foreign matter, or the like, the concentration of the process gas may be uneven, and the deposition quality and deposition efficiency may be reduced. To prevent this, as described above, after performing the deposition process a certain number of times, the inside of the chamber 11 can be cleaned with a cleaning gas.

[0083] The cleaning gas supply unit 22 can convert the cleaning gas into plasma and supply the plasma cleaning gas to the cleaning gas injection unit 23. When the cleaning gas is continuously supplied to the storage space 193 as described above, the cleaning gas can be injected through the nozzle unit 192. In this case, the fluorine radicals (F radicals) of the cleaning gas can react with a part of the process gas adsorbed on the inner wall of the chamber 11, the susceptor 14, the head unit 19, and / or the like to remove that part of the process gas.

[0084] As described above, while cleaning the chamber 11, the susceptor 14, the head unit 19, and the like with the cleaning gas, a voltage can be applied to the electrode unit 20. In this case, the reaction between the cleaning gas and a part of the process gas deposited on the chamber 11, the susceptor 14, the head unit 19, and the like can be promoted by the electrode unit 20, and thus the gas can be removed quickly.

[0085] During the above-described cleaning process, the pressure regulating unit 24 can discharge the gas in the chamber 11 to the outside. The pressure regulating valve 243 can open or close the pipe flow path 2411 so that the pressure in the chamber 11 is within a specified range.

[0086] Figure 4 is a cross-sectional view of a part of the pressure regulating unit 24 according to an embodiment.

[0087] Refer to Figures 1 to 4 , a part of the pipe flow path 2411 of the guide pipe 241 can be closed by the pressure regulating valve 243, and the other part thereof can be opened.

[0088] Hereinafter, the opening opened by the pressure regulating valve 243 in the pipe flow path 2411 will be referred to as the passage opening OP2411. In addition, the ratio of the cross-sectional area of the passage opening OP2411 to the cross-sectional area of the pipe flow path 2411 will be referred to as the opening ratio. That is, when the opening ratio is 100%, the pipe flow path 2411 can be fully opened, when the opening ratio is 0%, the pipe flow path 2411 can be fully closed, and when the opening ratio is 50%, half of the pipe flow path 2411 can be opened. The pressure regulating valve 243 can flexibly adjust the opening ratio. Therefore, the pressure regulating unit 24 can adjust the opening ratio so that the pressure in the chamber 11 is uniform.

[0089] Figure 5 is a diagram showing a graph representing the opening ratio changing with time.

[0090] In particular, in Figure 5 in the shown graph, the horizontal axis represents time in seconds (sec), and the vertical axis represents the opening ratio in %.

[0091] Referring to Figures 3 to 5 , the control unit (not shown) can determine the end point of the cleaning. That is, the control unit (not shown) can determine the end point of the cleaning process in the chamber 11.

[0092] Here, the opening ratio can be adjusted by the pressure regulating unit 24 so that the pressure in the chamber 11 is within a specified range.

[0093] When the cleaning starts, the opening ratio can increase until the first time T1. The period from the start of the cleaning to the first time T1 will be referred to as the first period E1. That is, in the first period E1, the hourly change amount of the opening ratio can be a positive number.

[0094] When the cleaning starts, as the cleaning gas is supplied from the cleaning gas supply unit 22 to the head unit 19, the portion of the head unit 19 near its central axis CX can be cleaned first. For example, the flow rate of the cleaning gas ejected by the first cleaning gas ejection unit 231 can be greater than the flow rate of the cleaning gas ejected by the second cleaning gas ejection unit 232. Therefore, the portion of the head unit 19 near the central axis CX can be cleaned first.

[0095] As the portion of the head unit 19 near the central axis CX is cleaned first, the temperature in the chamber 11 can increase, and correspondingly, the pressure in the chamber 11 can increase. Therefore, the pressure regulating unit 24 can increase the opening ratio so that the pressure in the chamber 11 is within a specified range.

[0096] The opening ratio can decrease from the first time T1 to the second time T2. The period from the first time T1 to the second time T2 will be referred to as the second period E2. That is, in the second period E2, the hourly change in the opening ratio can be negative.

[0097] As the transition is made from the first period E1 to the second period E2, the portion of the head unit 19 being cleaned can move away from the central axis CX. Thus, the heat generated by the cleaning in the second period E2 can be less than the heat in the first period E1. Accordingly, the temperature in the chamber 11 can decrease, and correspondingly, the pressure in the chamber 11 can be reduced. Thus, the pressure regulating unit 24 can reduce the opening ratio so that the pressure in the chamber 11 is within the specified range.

[0098] The opening ratio can increase from the second time T2 to the third time T3. The period from the second time T2 to the third time T3 will be referred to as the third period E3. That is, in the third period E3, the hourly change in the opening ratio can be positive.

[0099] As the transition is made from the second period E2 to the third period E3, the cleaning of the head unit 19 can be completed, and the cleaning of other components including the inner wall of the chamber 11 can be performed. For example, the cleaning of the inner wall of the chamber 11, the base 14, the mask 15, the masking frame 17, and the like can be performed.

[0100] Accordingly, the heat generated by the cleaning in the third period E3 can be greater than the heat in the second period E2. Thus, the temperature in the chamber 11 can increase, and correspondingly, the pressure in the chamber 11 can be increased. Thus, the pressure regulating unit 24 can increase the opening ratio so that the pressure in the chamber 11 is within the specified range.

[0101] After the third time T3, the hourly change in the opening ratio can be small or zero. The period after the third time T3 will be referred to as the fourth period E4. That is, in the fourth period E4, the hourly change in the opening ratio can be within the specified range.

[0102] In the fourth period E4, the cleaning in the chamber 11 can be completed. Accordingly, the heat generated by the cleaning in the fourth period E4 can be zero or small. Thus, the change in the temperature in the chamber 11 can be zero or small, and correspondingly, the pressure in the chamber 11 can be uniform. Thus, the pressure regulating unit 24 can adjust the hourly change in the opening ratio so that the pressure in the chamber 11 is within the specified range. For example, in the fourth period E4, the hourly change in the opening ratio can be zero.

[0103] When the hourly change in the opening ratio is within the specified range, the control unit (not shown) can determine that the cleaning has ended. For example, when the hourly change in the opening ratio is zero, the control unit (not shown) can determine that the cleaning has ended.

[0104] When it is determined that the cleaning has ended, a control unit (not shown) may control the cleaning gas supply unit 22 to stop supplying the cleaning gas to the head unit 19. Thereafter, the new deposition process described above with reference to Figure 1 may be started. That is, when it is determined that the cleaning has ended, the control unit (not shown) may control the process gas supply unit 21 to supply the process gas to the head unit 19.

[0105] In this process, since the end point of the cleaning is determined not by the naked eye but by the opening ratio, the accuracy of determining the end point of the cleaning can be improved.

[0106] Therefore, the increase in the cleaning time and the waste of the cleaning gas caused by continuously ejecting the cleaning gas even after the cleaning is completed can be reduced. Since the cleaning time is reduced, the damage to each component caused by the long-term exposure to the cleaning gas can be reduced. The phenomenon in which particles having an AlF component are formed by the reaction of fluorine radicals (F radicals) with aluminum (Al) of the head unit 19 can be reduced. In addition, since the cleaning time is reduced, the yield of the display device of the display device manufacturing apparatus can be increased. In addition, the phenomenon of incomplete cleaning that occurs due to stopping the ejection of the cleaning gas before the cleaning is completed can also be reduced.

[0107] When the opening ratio sequentially satisfies the first period E1, the second period E2, the third period E3, and the fourth period E4, the control unit (not shown) may determine that the cleaning has ended. That is, only when the hourly change amount of the opening ratio is sequentially positive, negative, positive again, and finally approaches 0, the control unit (not shown) may determine that the cleaning has ended. Therefore, since the determination of the end point of the cleaning performed by the control unit (not shown) becomes stricter, the phenomenon of misjudgment of the end point of the cleaning performed by the control unit (not shown) can be reduced.

[0108] Figure 6 is a flowchart showing a display device manufacturing method 2 according to an embodiment.

[0109] Referring to Figures 1 to 6 , the display device manufacturing method 2 may include an operation S1 of transporting the display substrate DS to the outside of the chamber 11 on the base 14, an operation S2 of supplying the cleaning gas to the head unit 19 through the cleaning gas supply unit 22, an operation S3 of ejecting the cleaning gas into the chamber 11 through the head unit 19, a pressure adjusting operation S4 of adjusting the pressure in the chamber 11 through the pressure adjusting unit 24, and an operation S5 of determining the end point of the cleaning by a control unit (not shown).

[0110] Specifically, the pressure regulation operation S4 may include an operation S41 in which the pressure regulation pump 242 applies a specified pressure to the tube flow path 2411, and an operation S42 in which the pressure regulating valve 243 opens or closes the tube flow path 2411 such that the pressure in the chamber 11 is within a specified range.

[0111] In this case, the control unit (not shown) may calculate the opening ratio and determine that the cleaning has ended when the hourly change amount of the opening ratio is within a specified range. When it is determined that the cleaning has ended, the control unit (not shown) may control the cleaning gas supply unit 22 to stop supplying the cleaning gas to the head unit 19.

[0112] The method 2 for manufacturing a display device may further include an operation S6 in which the process gas supply unit 21 supplies a process gas to the head unit 19 and an operation S7 in which the head unit 19 injects the process gas into the chamber 11. In this case, when it is determined that the cleaning has ended, the control unit (not shown) may control the process gas supply unit 21 to supply the process gas to the head unit 19.

[0113] Figure 7 is a plan view schematically showing a display device 3 according to an embodiment.

[0114] Referring to Figure 7 , the display device 3 manufactured according to the embodiment may include a display area DA and a peripheral area PA located outside the display area DA. The display device 3 may provide an image by two-dimensionally arranging an array of a plurality of pixels PX in the display area DA.

[0115] The peripheral area PA may be an area that does not provide an image and may completely or partially surround the display area DA. In the peripheral area PA, a driver or the like for supplying an electrical signal or power to a pixel circuit corresponding to each of the pixels PX may be arranged. In the peripheral area PA, pads may be arranged as areas to which an electronic device, a printed circuit board, or the like can be electrically connected.

[0116] Hereinafter, the display device 3 will be described as including an organic light emitting diode OLED (see Figure 8) as a light-emitting element; however, the display device 3 of the present disclosure is not limited thereto. In another embodiment, the display device 3 may include a light-emitting display device including an inorganic light-emitting diode, that is, an inorganic light-emitting display device. The inorganic light-emitting diode may include a PN junction diode including an inorganic semiconductor-based material. When a forward voltage is applied to the PN junction diode, holes and electrons may be injected therein, and the energy generated by the recombination of the holes and electrons may be converted into light energy to emit light of a certain color. The above-mentioned inorganic light-emitting diode may have a width of several micrometers to several hundred micrometers, and in some embodiments, the inorganic light-emitting diode may be referred to as a micro LED. In another embodiment, the display device 3 may include a quantum dot light-emitting display device.

[0117] In addition, the display device 3 can be used as a display screen for various products such as televisions, notebook computers, monitors, billboards, and Internet of Things (IoT) devices, as well as portable electronic devices such as mobile phones, smart phones, tablet personal computers (PCs), mobile communication terminals, electronic notebooks, e-books, portable multimedia players (PMPs), navigators, and ultra-mobile PCs (UMPCs). In addition, the display device 3 according to an embodiment can be used in wearable devices such as smart watches, watch phones, glasses-type displays, and head-mounted displays (HMDs). In addition, the display device 3 according to an embodiment can be used as a central information display (CID) arranged at the instrument panel of a vehicle or at the center garnish or dashboard of a vehicle, an in-vehicle mirror display replacing the side mirror of a vehicle, or a display screen arranged at the rear side of the front row seats of a vehicle for the entertainment of the rear seats of the vehicle.

[0118] Figure 8 is a schematic cross-sectional view showing the display device 3 according to an embodiment, and may correspond to a cross-sectional view of the display device 3 taken along Figure 7 the line VIII-VIII'.

[0119] Referring to Figure 8 , the display device 3 may include a stacked structure of a substrate 100, a pixel circuit layer PCL, a display element layer DEL, and a packaging layer 300.

[0120] The substrate 100 may have a multilayer structure including a base layer containing a polymer resin and an inorganic layer. For example, the substrate 100 may include a base layer containing a polymer resin and a barrier layer as an inorganic insulating layer. For example, the substrate 100 may include a first base layer 101, a first barrier layer 102, a second base layer 103, and a second barrier layer 104 stacked in sequence. The first base layer 101 and the second base layer 103 may include polyimide (PI), polyethersulfone (PES), polyarylate, polyetherimide (PEI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polyphenylene sulfide (PPS), polycarbonate, triacetyl cellulose (TAC), and / or cellulose acetate propionate (CAP). The first barrier layer 102 and the second barrier layer 104 may include inorganic insulating materials such as silicon oxide, silicon oxynitride, and / or silicon nitride. The substrate 100 may be flexible.

[0121] The pixel circuit layer PCL may be disposed on the substrate 100. Figure 8 It is shown that the pixel circuit layer PCL includes a thin film transistor TFT and buffer layers 111, a first gate insulating layer 112, a second gate insulating layer 113, an interlayer insulating layer 114, a first planarization insulating layer 115, and a second planarization insulating layer 116 disposed under and / or on the elements of the thin film transistor TFT.

[0122] The buffer layer 111 may reduce or block the penetration of foreign substances, moisture, or external air from the bottom of the substrate 100, and may provide a flat surface on the substrate 100. The buffer layer 111 may include inorganic insulating materials such as silicon oxide, silicon oxynitride, or silicon nitride, and may be formed as a single-layer or multi-layer structure including the above materials.

[0123] The thin film transistor TFT located on the buffer layer 111 may include a semiconductor layer Act, and the semiconductor layer Act may include polycrystalline silicon (poly-Si). Alternatively, the semiconductor layer Act may include amorphous silicon (a-Si), may include an oxide semiconductor, or may include an organic semiconductor or the like. The semiconductor layer Act may include a channel region C and a source region S and a drain region D respectively disposed on both sides of the channel region C. The gate electrode GE may overlap with the channel region C.

[0124] The gate electrode GE may include a low-resistance metal material. The gate electrode GE may include a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and may include a single-layer or multi-layer including the above materials.

[0125] The first gate insulating layer 112 located between the semiconductor layer Act and the gate electrode GE may include an inorganic insulating material such as silicon oxide (SiO2), silicon nitride (SiN x) silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO x ) Zinc oxide (ZnO x ) may include zinc oxide (ZnO) and / or zinc peroxide (ZnO2).

[0126] The second gate insulating layer 113 may be provided to cover the gate electrode GE. Like the first gate insulating layer 112, the second gate insulating layer 113 may include an inorganic insulating material such as silicon dioxide (SiO2), silicon nitride (SiN x ) silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO x ) Zinc oxide (ZnO x ) may include zinc oxide (ZnO) and / or zinc peroxide (ZnO2).

[0127] An upper electrode Cst2 of the storage capacitor Cst may be disposed on the second gate insulating layer 113. The upper electrode Cst2 may overlap with the gate electrode GE located therebelow. In this case, the gate electrode GE and the upper electrode Cst2 that overlap with each other with the second gate insulating layer 113 interposed therebetween may form the storage capacitor Cst. That is, the gate electrode GE may serve as the lower electrode Cst1 of the storage capacitor Cst.

[0128] Thus, the storage capacitor Cst and the thin film transistor TFT may be formed to overlap each other. In some embodiments, the storage capacitor Cst may be formed not to overlap with the thin film transistor TFT.

[0129] The upper electrode Cst2 may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and / or copper (Cu), and may include a single layer or multiple layers of the above materials.

[0130] The interlayer insulating layer 114 may cover the upper electrode Cst2. The interlayer insulating layer 114 may include silicon dioxide (SiO2), silicon nitride (SiN x ) silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO x ) Zinc oxide (ZnO x) may include zinc oxide (ZnO) and / or zinc peroxide (ZnO2). The interlayer insulating layer 114 may have a single-layer or multi-layer structure including the above inorganic insulating materials.

[0131] Each of the drain electrode DE and the source electrode SE may be positioned above the interlayer insulating layer 114. The drain electrode DE and the source electrode SE may be respectively connected to the drain region D and the source region S through contact holes formed in the insulating layer thereunder. The drain electrode DE and the source electrode SE may include materials having high conductivity. The drain electrode DE and the source electrode SE may include conductive materials containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and may include a single layer or multiple layers containing the above materials. In an embodiment, the drain electrode DE and the source electrode SE may have a multi-layer structure of Ti / Al / Ti.

[0132] The first planarization insulating layer 115 may cover the drain electrode DE and the source electrode SE. The first planarization insulating layer 115 may include an organic insulating material such as a general polymer (such as polymethyl methacrylate (PMMA) or polystyrene (PS)), a polymer derivative having a phenolic group, an acrylic polymer, an imide-based polymer, an aryl ether-based polymer, an amide-based polymer, a fluorine-based polymer, a parylene polymer, a vinyl alcohol-based polymer, or any blend thereof.

[0133] The second planarization insulating layer 116 may be disposed above the first planarization insulating layer 115. The second planarization insulating layer 116 may include the same material as that of the first planarization insulating layer 115, and may include an organic insulating material such as a general polymer (such as polymethyl methacrylate (PMMA) or polystyrene (PS)), a polymer derivative having a phenolic group, an acrylic polymer, an imide-based polymer, an aryl ether-based polymer, an amide-based polymer, a fluorine-based polymer, a parylene polymer, a vinyl alcohol-based polymer, or any blend thereof.

[0134] The display element layer DEL may be disposed above the pixel circuit layer PCL having the above structure. The display element layer DEL may include an organic light-emitting diode OLED as a display element (i.e., a light-emitting element), and the organic light-emitting diode OLED may include a stacked structure of a pixel electrode 210, an intermediate layer 220, and a common electrode 230. For example, the organic light-emitting diode OLED may emit red light, green light, or blue light, or may emit red light, green light, blue light, or white light. The organic light-emitting diode OLED may emit light through an emission region, and the emission region may be defined as a pixel PX.

[0135] The pixel electrode 210 of the organic light-emitting diode (OLED) can be electrically connected to the thin-film transistor (TFT) through contact holes formed in the second planarization insulating layer 116 and the first planarization insulating layer 115 and a contact metal CM disposed on the first planarization insulating layer 115.

[0136] The pixel electrode 210 may include a conductive oxide such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In another embodiment, the pixel electrode 210 may include a reflective layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), or any compound thereof. In another embodiment, the pixel electrode 210 may further include a layer formed of ITO, IZO, ZnO, or In2O3 disposed above / below the reflective layer.

[0137] Above the pixel electrode 210, a bank layer 117 including an opening 117OP exposing the central portion of the pixel electrode 210 may be disposed. The bank layer 117 may include an organic insulating material and / or an inorganic insulating material. The opening 117OP may define an emission region of light emitted from the organic light-emitting diode (OLED). For example, the size / width of the opening 117OP may correspond to the size / width of the emission region. Thus, the size and / or width of the pixel PX may depend on the size and / or width of the corresponding opening 117OP of the bank layer 117.

[0138] The intermediate layer 220 may include an emission layer 2221 formed to correspond to the pixel electrode 210. The emission layer 2221 may include a high molecular weight or low molecular weight organic material for emitting light of a certain color. Alternatively, the emission layer 2221 may include an inorganic light-emitting material or may include quantum dots.

[0139] In an embodiment, the intermediate layer 220 may include a first functional layer 2211 and a second functional layer 2231 disposed below and above the emission layer 2221, respectively. The first functional layer 2211 may include, for example, a hole transport layer (HTL) or may include an HTL and a hole injection layer (HIL). The second functional layer 2231 may be a component disposed above the emission layer 2221 and may include an electron transport layer (ETL) and / or an electron injection layer (EIL). Similar to the common electrode 230 described below, the first functional layer 2211 and / or the second functional layer 2231 may be a common layer formed to completely cover the substrate 100.

[0140] The common electrode 230 may be disposed on top of the pixel electrode 210 and may overlap with the pixel electrode 210. The common electrode 230 may include a conductive material having a low work function. For example, the common electrode 230 may include a (semi)transparent layer containing silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), or any alloy thereof. Alternatively, the common electrode 230 may further include a layer containing, such as ITO, IZO, ZnO, or In2O3, on top of the (semi)transparent layer containing the above materials. The common electrode 230 may be integrally formed to completely cover the substrate 100.

[0141] The encapsulation layer 300 may be disposed on top of the display element layer DEL and may cover the display element layer DEL. The encapsulation layer 300 may include at least one inorganic encapsulation layer and at least one organic encapsulation layer, and as an embodiment, Figure 8 it is shown that the encapsulation layer 300 includes a first inorganic encapsulation layer 310, an organic encapsulation layer 320, and a second inorganic encapsulation layer 330 stacked in sequence.

[0142] The first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include one or more inorganic materials among aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic encapsulation layer 320 may include a polymer-based material. The polymer-based material may include an acrylic-based resin, an epoxy-based resin, polyimide, polyethylene, or the like. In an embodiment, the organic encapsulation layer 320 may include acrylate. The organic encapsulation layer 320 may be formed by curing a monomer or applying a polymer. The organic encapsulation layer 320 may be transparent.

[0143] Although not shown, a touch sensor layer may be disposed on top of the encapsulation layer 300, and an optical function layer may be disposed on top of the touch sensor layer. The touch sensor layer may be configured to obtain coordinate information according to an external input (e.g., a touch event). The optical function layer may reduce the reflectance of light (external light) incident on the display device from the outside and / or may improve the color purity of the light emitted from the display device. In an embodiment, the optical function layer may include a phase retarder and / or a polarizer. The phase retarder may be a film type or a liquid crystal coating type and may include a λ / 2 phase retarder and / or a λ / 4 phase retarder. The polarizer may also be a film type or a liquid crystal coating type. The film type may include a stretchable synthetic resin film, and the liquid crystal coating type may include liquid crystals arranged in a certain array. The phase retarder and the polarizer may further include a protective film.

[0144] An adhesive member may be disposed between the touch sensor layer and the optical function layer. The adhesive member may include a common adhesive member known in the art, but is not limited thereto. The adhesive member may include a pressure-sensitive adhesive (PSA).

[0145] Referring to Figures 1 to 6 the display substrate DS described, it may include the substrate 100 referred to Figure 8 to. In addition, referring to Figures 1 to 6 the deposited material described, it may include the material of the intermediate layer 220 (e.g., the emission layer 2221) referred to Figure 8 to.

[0146] Figure 9 is an equivalent circuit diagram of a pixel PX of a display device according to an embodiment.

[0147] Each pixel PX may include a pixel circuit PC and a display element (e.g., an organic light-emitting diode OLED) connected to the pixel circuit PC. The pixel circuit PC may include a first thin-film transistor T1, a second thin-film transistor T2, and a storage capacitor Cst. Each pixel PX may emit, for example, red light, green light, blue light, or white light from the organic light-emitting diode OLED.

[0148] As a switching thin-film transistor, the second thin-film transistor T2 may be connected to a scan line SL and a data line DL, and may be configured to send a data voltage input from the data line DL to the first thin-film transistor T1 based on a switching voltage input from the scan line SL. The storage capacitor Cst may be connected to the second thin-film transistor T2 and a driving voltage line PL, and may be configured to store a voltage corresponding to the difference between the voltage received from the second thin-film transistor T2 and a first power supply voltage ELVDD supplied to the driving voltage line PL.

[0149] As a driving thin-film transistor, the first thin-film transistor T1 may be connected to the driving voltage line PL and the storage capacitor Cst, and may be configured to control a driving current flowing through the organic light-emitting diode OLED from the driving voltage line PL in response to the value of the voltage stored in the storage capacitor Cst. The organic light-emitting diode OLED may emit light with a certain brightness according to the driving current. A relative electrode (e.g., a cathode) of the organic light-emitting diode OLED may be supplied with a second power supply voltage ELVSS.

[0150] Figure 9 It shows that the pixel circuit PC includes two thin-film transistors and one storage capacitor; however, the present disclosure is not limited thereto. The number of thin-film transistors and the number of storage capacitors may be variously modified according to the design of the pixel circuit PC. For example, in addition to the above two thin-film transistors, the pixel circuit PC may further include four or more thin-film transistors.

[0151] According to an embodiment, it is possible to reduce phenomena such as waste of cleaning gas, damage to each component, and deterioration of productivity that may occur due to continuous injection of cleaning gas even after cleaning is completed.

[0152] According to an embodiment, it is possible to reduce the phenomenon of incomplete cleaning caused by stopping the injection of the cleaning gas before the cleaning is completed.

[0153] The effects of the present disclosure are not limited to the above effects, and other effects not described herein will be clearly understood by those of ordinary skill in the art from the description of the claims.

[0154] It should be understood that the embodiments described herein should be considered only in a descriptive sense and not for purposes of limitation. The description of features or aspects within each embodiment is generally to be regarded as available for other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the figures, those of ordinary skill in the art will understand that various changes in form and detail may be made therein without departing from the spirit and scope as defined by the appended claims.

Claims

1. A display device manufacturing device, comprising: room; a susceptor disposed in the chamber and supporting a display substrate; a head unit disposed in the chamber and injecting a cleaning gas into the chamber; a cleaning gas supply unit that supplies the cleaning gas to the head unit; a pressure regulating unit, the pressure regulating unit regulating the pressure in the chamber; as well as a control unit, the control unit determining an end point of the cleaning, Wherein, the pressure regulating unit comprises: a guide tube connected to the chamber and including a tube flow path communicating with the interior of the chamber; a pressure regulating pump connected to the guide tube and applying a specified pressure to the tube flow path so that the gas in the chamber flows to the outside of the chamber; and a pressure regulating valve connected to the guide tube and opening or closing the tube flow path so that the pressure in the chamber is within a first specified range, wherein the control unit calculates an opening ratio as a ratio of a cross-sectional area of ​​a passage opening opened by the pressure regulating valve to a cross-sectional area of ​​the tube flow path, and determines that the cleaning has ended when an hourly change in the opening ratio is within a second specified range.

2. The display device manufacturing apparatus according to claim 1, wherein: When it is determined that the purge has ended, the control unit controls the purge gas supply unit to stop supplying the purge gas to the head unit.

3. The display device manufacturing apparatus according to claim 1, wherein: The control unit determines that the cleaning is completed when the opening ratio sequentially satisfies a first time period in which the hourly change of the opening ratio is a positive number, a second time period in which the hourly change of the opening ratio is a negative number, a third time period in which the hourly change of the opening ratio is a positive number, and a fourth time period in which the hourly change of the opening ratio is within the second specified range.

4. The display device manufacturing apparatus according to claim 3, wherein: In the fourth period, the hourly change in the opening ratio is zero.

5. The display device manufacturing apparatus according to claim 3, wherein: With the transition from the first period to the second period, the portion of the head unit being cleaned gradually moves away from the central axis of the head unit.

6. The display device manufacturing apparatus according to claim 3, wherein: With the transition from the second period to the third period, the cleaning of the head unit is completed.

7. The display device manufacturing apparatus according to claim 1, further comprising: a process gas supply unit for supplying process gas to the head unit, wherein the head unit injects the process gas into the chamber.

8. The display device manufacturing apparatus according to claim 7, wherein: When it is determined that the purge has ended, the control unit controls the process gas supply unit to supply the process gas to the head unit.

9. The display device manufacturing apparatus according to claim 1, further comprising: a sensing unit arranged in the chamber to sense the pressure in the chamber, wherein the pressure regulating valve opens or closes the tube flow path based on information sensed by the sensing unit.

10. The display device manufacturing apparatus according to claim 1, further comprising: A mask is disposed in the chamber and includes a deposition area disposed above the display substrate.

11. A method for manufacturing a display device, comprising: carrying the display substrate to the outside of the chamber on a susceptor disposed in the chamber; supplying a cleaning gas to the head unit through a cleaning gas supply unit; injecting the cleaning gas into the chamber through the head unit; a pressure regulating operation for regulating the pressure in the chamber by a pressure regulating unit; as well as The end point of cleaning is determined by the control unit. Wherein, the pressure adjustment operation includes: applying a specified pressure to the tube flow path by a pressure regulating pump disposed at a guide tube including the tube flow path communicating with the interior of the chamber; and The tube flow path is opened or closed by a pressure regulating valve connected to the guide tube so that the pressure in the chamber is within a first specified range, wherein the control unit calculates an opening ratio as a ratio of a cross-sectional area of ​​a passage opening opened by the pressure regulating valve to a cross-sectional area of ​​the tube flow path, and determines that the cleaning has ended when an hourly change in the opening ratio is within a second specified range.

12. The method for manufacturing a display device according to claim 11, wherein: When it is determined that the purge has ended, the control unit controls the purge gas supply unit to stop supplying the purge gas to the head unit.

13. The method for manufacturing a display device according to claim 11, wherein: The control unit determines that the cleaning is completed when the opening ratio sequentially satisfies a first time period in which the hourly change of the opening ratio is a positive number, a second time period in which the hourly change of the opening ratio is a negative number, a third time period in which the hourly change of the opening ratio is a positive number, and a fourth time period in which the hourly change of the opening ratio is within the second specified range.

14. The method for manufacturing a display device according to claim 13, wherein: In the fourth period, the hourly change in the opening ratio is zero.

15. The method for manufacturing a display device according to claim 13, wherein: With the transition from the first period to the second period, the portion of the head unit being cleaned gradually moves away from the central axis of the head unit.

16. The method for manufacturing a display device according to claim 13, wherein: With the transition from the second period to the third period, the cleaning of the head unit is completed.

17. The method for manufacturing a display device according to claim 11, further comprising: supplying a process gas to the head unit through a process gas supply unit; as well as The process gas is injected into the chamber through the head unit.

18. The method for manufacturing a display device according to claim 17, wherein: When it is determined that the purge has ended, the control unit controls the process gas supply unit to supply the process gas to the head unit.

19. The method for manufacturing a display device according to claim 11, further comprising: sensing the pressure in the chamber by a sensing unit arranged in the chamber, wherein the pressure regulating valve opens or closes the tube flow path based on information sensed by the sensing unit.

20. The method for manufacturing a display device according to claim 11, further comprising: A mask is provided that is disposed in the chamber and includes a deposition region disposed above the display substrate.

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