Modular microwave source with integrated optical sensor

Abstract

Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, a semiconductor processing tool includes a chamber, and a cover configured to seal the chamber. In an embodiment, a modular microwave plasma applicator is provided through the cover, and an optical port is provided through the cover and adjacent to the modular microwave plasma source. In an embodiment, a pin is inserted into the optical port.

Description

Technical Field

[0001] Cross - Reference to Related Applications

[0002] This application claims the priority of U.S. Patent Application No. 17 / 981,278, filed on November 4, 2022, the entire content of which is incorporated herein by reference.

[0003] Embodiments relate to the field of semiconductor manufacturing and, more particularly, to a plasma processing tool that includes a modular microwave source having an integrated optical sensor for controlling plasma density. Background Art

[0004] In a plasma processing environment, plasma properties are tightly controlled to provide uniform processing results on a substrate. Generally, controllable plasma properties include plasma density, electron density, plasma temperature, etc. Ideally, for uniform processing, plasma properties are typically maintained as uniform as possible across the surface of the substrate being processed. In the case of traditional plasma processing tools, a single energy source (e.g., an RF source, a microwave source, etc.) is used to ignite and sustain the plasma. As such, there are a limited number of knobs that can be tuned to vary the plasma properties across the substrate surface. In more advanced processing environments, multiple energy sources (and applicators) may be provided. Adding more applicators allows additional degrees of freedom to vary the plasma properties.

[0005] Typically, plasma properties are measured using optical emission spectroscopy (OES). The OES system includes ports along the sidewalls of the plasma chamber. Optical signals from the plasma propagate out of the ports to a controller. However, since the OES ports are along the sidewalls, only average plasma properties can be obtained. That is, there is no ability to spatially resolve different regions (e.g., the center, the edges, etc.) of the plasma chamber. Thus, OES data does not enable advanced spatial tuning (e.g., to provide improved uniformity or other desired plasma profiles). Summary of the Invention

[0006] Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool includes a chamber and a lid configured to seal the chamber. In an embodiment, a modular microwave plasma applicator is provided through the lid, and an optical port is provided through the lid and adjacent to the modular microwave plasma source. In an embodiment, a pin is inserted into the optical port.

[0007] Embodiments disclosed herein may also include a semiconductor processing tool that includes a chamber having a lid and a plurality of microwave applicators passing through the lid. In an embodiment, a plurality of microwave power sources are provided, where each microwave power source of the plurality of microwave power sources is coupled to a different one of the plurality of microwave applicators. In an embodiment, a plurality of optical ports are provided through the lid, and a controller is provided, where the plurality of optical ports and the plurality of microwave power sources are communicatively coupled to the controller.

[0008] Embodiments disclosed herein may also include a method of controlling a plasma process. In an embodiment, the method includes providing a plurality of microwave power sources for supporting a modular plasma in a chamber and obtaining optical signals from the modular plasma with a plurality of optical sensors. In an embodiment, the method includes transmitting the optical signals to a controller and determining, with the controller, microwave power and frequency settings of the plurality of microwave power sources to produce a desired plasma density uniformity in the chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a cross-sectional view illustration of a plasma chamber having an optical emission spectroscopy (OES) port on a sidewall of the chamber.

[0010] Figure 2 is a cross-sectional view illustration of a modular microwave plasma chamber having an OES port passing through a lid of the chamber, according to an embodiment.

[0011] Figure 3 is an enlarged cross-sectional view illustration that more clearly depicts the structure of a modular microwave applicator and an OES port, according to an embodiment.

[0012] Figure 4A is a plan view illustration of a lid, according to an embodiment, showing the layout of modular microwave applicators and OES ports around the perimeter of the lid.

[0013] Figure 4B is a plan view illustration of a lid, according to an embodiment, showing the layout of modular microwave applicators and OES ports around the perimeter of the lid.

[0014] Figure 4C is a plan view illustration of a lid, according to an embodiment, showing the layout of modular microwave applicators and OES ports distributed across the entire surface of the lid.

[0015] Figure 5A cross-sectional view of a plasma chamber according to an embodiment is illustrated. The plasma chamber includes a modular microwave applicator controlled by a machine learning (ML) or artificial intelligence (AI) controller that uses feedback from one or more OES ports as well as from a microwave power source.

[0016] Figure 6 A process flow diagram of a process for controlling plasma density in a modular microwave plasma chamber with an ML or AI controller according to an embodiment.

[0017] Figure 7 A block diagram of an exemplary computer system that can be used in conjunction with a processing tool according to an embodiment is illustrated. Detailed Description

[0018] The systems described herein include a plasma processing tool that includes a modular microwave source having an integrated optical sensor for controlling plasma density. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the embodiments. It will be apparent to those skilled in the art that the embodiments may be practiced without these specific details. In other instances, well-known aspects have not been described in detail so as not to unnecessarily obscure the embodiments. Additionally, it should be understood that the various embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.

[0019] As described above, optical emission spectroscopy (OES) can be used to determine one or more plasma parameters in a plasma processing tool. Unfortunately, existing solutions do not allow for spatially discerning plasma properties within the chamber. This is because OES ports are typically located on the sidewalls of the chamber. The average value of the plasma properties of interest is suitable for chambers that include a single power source and / or applicator, since it is much more difficult to create plasma variations on the surface of the substrate.

[0020] However, in more advanced semiconductor processing tools (such as modular microwave plasma tools), the ability to tune the plasma on the surface of the substrate is more easily achieved. In some cases, multiple microwave applicators can be tuned to provide improved plasma uniformity, or a microwave applicator can be tuned to provide a non-uniform plasma profile in order to address incoming substrate non-uniformities, warping, etc. Accordingly, it is desirable to provide feedback control informed by a spatial map of the plasma.

[0021] In some embodiments disclosed herein, the plasma is monitored through OES ports that are provided through the lid of the chamber rather than through the sides. In this way, multiple OES ports can be used to determine the plasma properties on the surface of the substrate. This feedback can be used by a controller (e.g., a machine learning (ML) controller or an artificial intelligence (AI) controller) to modify the settings of individual microwave applicators. For example, the power, frequency, etc. provided to the microwave applicator can be modified to provide a desired plasma profile.

[0022] Providing OES ports through the lid also allows the substrate to be closer to the panel of the lid. This is because horizontal ports passing through the sidewalls of the chamber above the substrate height are not required. In some embodiments, the OES ports are entirely outside the perimeter of the substrate being processed in the chamber. This can be beneficial because the OES ports will not negatively affect the plasma seen by the substrate. However, in other embodiments, one or more OES ports can be disposed within the perimeter of the substrate being processed in the chamber.

[0023] In an embodiment, the OES ports can be filled with transparent (transparent to electromagnetic radiation) pins. For example, in some embodiments, the pins can comprise sapphire or quartz. These pins fill the space of the OES ports and prevent the plasma from being ignited in the cavity (i.e., through the hollow cathode effect). In some cases, the pins can also be two-piece pins. The first part of the pin can be disposed in the panel, and the second part of the pin can be disposed in the cover. The two parts accommodate any coefficient of thermal expansion (CTE) mismatch between the layers without causing the pin to break.

[0024] In some embodiments, the controller of the plasma processing chamber can receive feedback from one or more of the OES ports and / or one or more of the microwave power sources. The feedback can be used to adjust and tune the plasma within the chamber. However, the embodiments are not limited to a simple controller architecture (e.g., closed-loop control). As described above, the controller can be an ML controller or an AI controller. In such embodiments, the controller can learn from the OES feedback. For example, the controller can learn how changes in one or more parameters of the microwave power source will affect the plasma. This learned data can be used to tune the plasma to the desired state more precisely and in a more timely manner. ML and AI control can also be used to determine how multiple microwave applicators interact with each other, such as through a multiple input multiple output (MIMO) control system. Through learning, the controller can build a more accurate digital twin of the processing chamber, which provides a modeling that can augment the existing modeling that relies only on the physical and chemical equations describing the process.

[0025] Now refer to Figure 1 FIG. , which shows a cross-sectional view of the semiconductor processing tool 100 to provide context for the embodiments described in more detail below. As shown, the semiconductor processing tool 100 may include a chamber body 105. The chamber body 105 may be closed by a lid 121. In an embodiment, a pedestal 107 supports a chuck 109. The pedestal 107 may be vertically displaceable within the chamber body 105 to position a substrate 110 within the chamber body 105.

[0026] The substrate 110 may be a typical substrate processed with plasma processing operations. For example, the substrate 110 may include a semiconductor substrate, such as a wafer, etc. However, in some cases other form factors may also be used. In Figure 1 the illustration, the diameter of the substrate 110 is smaller than the diameter of the chuck 109. However, in some cases, the substrate 110 may extend beyond the edge of the chuck 109. The chuck 109 may be an electrostatic chuck (ESC) or any other suitable chuck mechanism. The chuck 109 may include a heating and / or cooling solution to control the temperature of the substrate 110 during processing.

[0027] In Figure 1 the illustration, an adapter 112 separates the chamber body 105 from the lid 121. The adapter 112 may include a port 113. Electromagnetic radiation 115 from the plasma 135 within the chamber body 105 may propagate out of the port 113. Since the port 113 is located on one side of the tool 100, the electromagnetic radiation 115 is from the entire width of the plasma 135. That is, it is difficult (if not impossible) to obtain a spatial understanding of the plasma 135. All that is received is the average value passing through the plasma 135. Additionally, when the port is above the substrate 110 (to monitor the processing area of the tool 100), the distance between the showerhead 122 and the substrate 110 increases.

[0028] The showerhead 122 may include channels (not shown) for allowing one or more gases 127 to flow into the chamber body 105. For example, one or more inlets 125 may be coupled to the showerhead 122. Additionally, the showerhead 122 may act as an electrode for coupling energy into the chamber body 105. For example, the showerhead 122 may be coupled to a source 130, such as an RF source, a microwave source, etc. Although not shown, in some cases a second source may also be coupled to the chuck 109.

[0029] In Figure 1In the illustrated example, the tool 100 can be described as having a single source or a single applicator. That is, the control of the plasma on the surface of the substrate 110 is limited. However, with the continuous progress of the tool, a promising solution is to use modular sources. In such embodiments, the power coupled into the chamber is provided by multiple applicators. Each applicator can be independently controlled to provide a desired plasma profile on the surface of the substrate. In a particular embodiment, multiple microwave power sources can be used with multiple microwave applicators. In such embodiments, it may be desirable to provide more spatially resolved feedback to control the plasma profile across the surface of the substrate.

[0030] Accordingly, embodiments are described having an OES port passing through the top surface or lid of the chamber. Now referring to Figure 2 , a cross-sectional view illustration of one such semiconductor processing tool 200 according to an embodiment is shown. In an embodiment, the semiconductor processing tool 200 includes a chamber body 205. The chamber body 205 can be sealed by a lid 221 to define an internal volume in which a plasma 235 can be formed. In an embodiment, the semiconductor processing tool 200 can include a pedestal 207 and a chuck 209. The pedestal 207 can be vertically displaceable to change the position of the substrate 210 within the chamber body 205. In an embodiment, the chuck 209 can be an ESC or the like. The chuck 209 can include a heating and / or cooling solution to control the temperature of the substrate 210 during processing.

[0031] In an embodiment, the substrate 210 can be a semiconductor substrate. For example, the substrate 210 can be a silicon wafer having a standard form factor (e.g., 150 mm, 200 mm, 300 mm, 450 mm, etc.). However, in other embodiments, the substrate 210 can have other form factors, such as a reticle form factor, a panel form factor, etc. In an embodiment, the diameter of the substrate 210 can be less than the diameter of the chuck 209, as Figure 2 shown. However, in some embodiments, the substrate 210 can overhang the edge of the chuck 209.

[0032] In an embodiment, a showerhead or the like can be disposed through the lid 221. In the embodiment shown in Figure 2 , the showerhead includes a panel 241 and a shroud 242. The panel 241 can be directly exposed to the interior of the chamber body 205, and the shroud 242 can be disposed above the panel 241. The panel 241 and the shroud 242 can be different materials. For example, the panel 241 can be a conductor and the shroud 242 can be an electrically insulating material.

[0033] In an embodiment, the showerhead may include a fluid path (not shown) that passes through one or both of the panel 241 and the cover 242. The fluid path may be adapted to allow one or more gases to flow into the chamber body 205. The gas flowing into the chamber body 205 may be ignited into a plasma 235. The plasma 235 may be disposed above the substrate 210. In an embodiment, the width of the plasma 235 may be wider than the diameter of the substrate 210.

[0034] In an embodiment, a plurality of modular applicators 250 may be provided through the showerhead. The modular applicators 250 may include a dielectric body having holes that enter but do not pass through the top surface of the dielectric body. Antennas 251 may be disposed in the holes. The antennas 251 are conductive features coupled to a power source (not shown). In a particular embodiment, the power source is a modular microwave power source. Thus, each of the applicators 250 may be coupled to the microwave source to transfer microwave power into the chamber body 205 to excite and sustain the plasma 235. In an embodiment, the bottom surface of the applicator 250 (i.e., the bottom dielectric surface) is exposed at the bottom of the showerhead within the chamber body 205.

[0035] In an embodiment, the semiconductor processing tool 200 may further include one or more OES ports 255. The OES ports 255 may include ports that pass through the showerhead (i.e., the panel 241 and the cover 242). The OES ports 255 may be filled with pins, such as pins that are transparent to the electromagnetic radiation emitted by the plasma 235. For example, the pins may comprise sapphire, quartz, etc. As shown, the electromagnetic radiation 215 emitted by the plasma 235 passes through the OES ports 255.

[0036] In an embodiment, the OES ports 255 are disposed outside the perimeter of the substrate 210. Thus, the surface of the OES ports 255 may not directly interfere with the plasma above the substrate 210. However, as will be described in more detail below, one or more OES ports 255 may also be disposed within the perimeter of the substrate 210. Additionally, since the OES ports 255 are formed above the plasma 235, the plasma properties at a given region may be determined, as opposed to receiving an average of the plasma properties within the chamber body 205. Further, since the OES ports 255 are above the substrate 210, the substrate 210 may be positioned closer to the panel 241.

[0037] Now refer to Figure 3, An enlarged cross-sectional view illustrating a portion of the semiconductor processing tool 300 is shown according to an additional embodiment. As shown, the semiconductor processing tool 300 may include a chuck 309 and a substrate 310 above the chuck 309. The chuck 309 and the substrate 310 may be substantially similar to the chuck 209 and the substrate 210 described in more detail above. In an embodiment, a showerhead including a panel 341 and a cover 342 may be disposed above the chuck 309 and the substrate 310. A plasma 335 may be formed between the panel 341 and the substrate 310.

[0038] In an embodiment, the modular applicator 350 may be disposed through the cover 342 and the panel 341. As shown, the modular applicator 350 may have a stepped cylindrical design. A first cylinder having a first diameter may be disposed below a second cylinder having a second (larger) diameter. The larger second diameter may be sufficient to provide a flange on which a seal ring 352 (e.g., an O-ring) may rest. In this way, the modular applicator 350 may provide a seal between the external environment and the internal processing region where the plasma 335 is formed.

[0039] In an embodiment, the modular applicator 350 may include a hole 353. The hole 353 may be disposed at the axial center of the modular applicator 350. The hole 353 may have a rounded bottom surface. Additionally, an antenna 351 may be inserted into the hole 353. The antenna 351 may have a gap between the bottom surface and the bottom surface of the hole 353. This gap may allow the antenna 351 to expand during use. The antenna 351 may be coupled to a microwave power source (not shown). Although Figure 3 a single modular applicator 350 is shown, it should be understood that any number of modular applicators 350 may be included in the semiconductor processing tool 300.

[0040] In an embodiment, an OES port 355 may be disposed through the panel 341 and the cover 342. The OES port 355 may be filled with pins 356 / 357. The pins 356 / 357 may be divided into two different components (i.e., a bottom pin 356 and a top pin 357). The use of two separate pins 356 and 357 allows for a thermal expansion mismatch between the panel 341 and the cover 342 (e.g., due to different CTEs between the materials). If a single pin is used, the thermal expansion mismatch may cause the single pin to break. However, in some embodiments, it may be sufficient to fill the OES port 355 with a single pin.

[0041] In an embodiment, the pins 356 / 357 can be formed of a material that is substantially transparent to the electromagnetic radiation emitted by the plasma 335. For example, the pins 356 / 357 can comprise sapphire, quartz, etc. In one embodiment, the bottom pin 356 can have a dual diameter. The first diameter can be at the lower end of the bottom pin 356, and the second (larger) diameter can be at the upper end of the bottom pin 356. The diameter of the top pin 357 can substantially match the second diameter at the upper end of the bottom pin 356. In an embodiment, the OES port 355 can be substantially filled with the pins 356 / 357. Thus, there is no gap within the showerhead that can form a plasma (i.e., via the hollow cathode effect).

[0042] The OES port 355 can be coupled to an optical waveguide (not shown) to transfer an optical signal from the chamber to a controller (not shown). The controller can convert the optical signal into measurements of one or more plasma properties (e.g., plasma density, electron density, plasma temperature, etc.). A coupler (not shown) can couple the OES port 355 to the optical waveguide.

[0043] In the illustrated embodiment, the OES port 355 is disposed outside the diameter of the substrate 310. However, in other embodiments, the OES port 355 can be disposed within the diameter of the substrate 310. Although Figure 3 a single OES port 355 is illustrated, it should be understood that any number of OES ports 355 can be provided in the semiconductor processing tool 300.

[0044] Now referring Figures 4A to 4C , a series of plan views are shown in accordance with an embodiment that depict the layout of the modular microwave applicators 450 and the OES ports 455 in the panel 441. It should be understood that Figures 4A to 4C the examples shown in Figures 4A to 4C are illustrative of only some embodiments. That is, the embodiments are not limited to those shown in

[0045] Now referring Figure 4A , a plan view of the panel 441 is shown in accordance with an embodiment. The panel 441 can be part of a showerhead integrated into the lid of a semiconductor processing tool, such as those described in more detail above. In an embodiment, a plurality of modular microwave applicators 450 can be distributed around the surface of the panel 441. For example, Figure 4A 19 modular microwave applicators 450 are illustrated in

[0046] In an embodiment, a set of three OES ports 455 are distributed on the panel 441. The OES ports 455 can be disposed outside the diameter of a substrate (not shown) being processed in a semiconductor processing tool. For example, the OES ports 455 are illustrated as being distributed near the outer periphery of the panel 441. Additionally, although three OES ports 455 are illustrated, it should be understood that any number of OES ports 455 can be included in the panel 441.

[0047] In an embodiment, the distribution of the OES ports 455 allows for the measurement of plasma properties at different locations within the chamber. This allows for the determination of plasma uniformity measurement results. The embodiments disclosed herein allow for the determination of plasma properties at multiple different locations, rather than using a single port that averages the plasma properties over the entire surface of the substrate.

[0048] Now referring Figure 4B , a plan view illustration of the panel 441 is shown in accordance with yet another embodiment. Compared to the embodiment in Figure 4A , the number of modular microwave applicators 450 is reduced. In particular, a set of three modular microwave applicators 450 are illustrated. In an embodiment, the microwave applicator 450 can be larger than the microwave applicator 450 in Figure 4A . In other embodiments, the microwave applicator 450 can be disposed on a smaller panel 441. For example, the panel 441 and microwave applicator 450 configuration shown in Figure 4B can be used in a remote plasma system. That is, the plasma can be generated in a forechamber outside of the main processing chamber, and the plasma can flow into the main processing chamber.

[0049] As shown, a plurality of OES ports 455 can be distributed on the panel 441. The OES ports 455 can include two OES ports 455. In other embodiments, the number of OES ports 455 can be equal to the number of modular microwave applicators 450. In an embodiment, the OES ports 455 are disposed near the perimeter of the panel 441. However, in some embodiments, one or more of the OES ports 455 can be oriented towards the middle of the panel 441.

[0050] Now referring Figure 4C , a plan view illustration of the panel 441 is shown in accordance with additional embodiments. In the embodiment shown in Figure 4C , the distribution and number of the modular microwave applicators 450 are substantially similar to the layout shown in Figure 4A . However, as shown in Figure 4C , the OES ports 455 can be distributed over the entire surface of the panel 441, rather than being limited to the outer perimeter of the panel 441. For example, Figure 4CA total of seven OES ports 455 are illustrated in the figure. In an embodiment, one or more of the OES ports 455 may be located within the outer periphery of a substrate (not shown) being processed below panel 441 in the chamber.

[0051] Now referring Figure 5 , a cross-sectional view illustration of a semiconductor processing tool 500 is illustrated according to an embodiment. In an embodiment, the semiconductor processing tool 500 may include a chuck 509, where a substrate 510 is disposed on the chuck 509. A showerhead including a panel 541 and a cover 542 may be disposed above the substrate 510. In an embodiment, a plurality of microwave applicators 550 are provided through the showerhead. An antenna 551 may be disposed at the axial center of each of the microwave applicators 550. The microwave applicators 550 may couple energy from a microwave power source 571 into the chamber to form a plasma 535. As shown, the plasma 535 may be formed by a plurality of plasma regions 535A to 535N. That is, each microwave applicator 550 may form a plasma region directly below a given microwave applicator 550, and adjacent plasma regions may merge together. Although three plasma regions 535A to 535N are shown, it should be understood that any number of plasma regions 535 may be formed, depending on the number of modular microwave applicators 550. As shown, each of the microwave applicators 550 may be coupled to a different one of the microwave power sources 571A to 571N. Thus, the plasma regions 535 may be independently controllable.

[0052] In an embodiment, the semiconductor processing tool 500 may include a plurality of OES ports 555. Each OES port 555 may be filled with pins including a lower pin 556 and an upper pin 557. Each OES port 555 may be coupled to a controller 570. The OES ports 555 provide feedback data to the controller 570 to assist in controlling the plasma regions 535A to 535N. For example, an optical signal from the OES ports 555 may be converted by the controller 570 into one or more plasma properties (e.g., plasma density, electron density, plasma temperature, etc.). The controller 570 may also receive feedback from the microwave power sources 571A to 571N. For example, forward power, reflected power, frequency, etc. may be provided back to the controller as additional feedback information.

[0053] In an embodiment, the controller 570 obtains feedback information from the OES ports 555 and the microwave power sources 571 and uses this feedback information to change one or more parameters of the plasma. This is accomplished by feeding one or more control signals back to the microwave power sources 571. For example, the controller 570 may send signals to the power source 571 that cause changes in forward power, frequency, matching settings, etc.

[0054] In an embodiment, the controller 570 can be a standard closed-loop controller. In other embodiments, the controller 570 can be ML-controlled and / or AI-controlled. In the case of ML and AI, the controller 570 can further learn from the feedback information in order to control the plasma region 535 more precisely and in a timely manner. For example, the feedback data can be used to understand how the semiconductor processing tool 500 responds to changes in one or more parameters. The ML and / or AI controller 570 can allow for a more accurate understanding of the conditions within the semiconductor processing tool 500. For example, the ML and / or AI controller can help form a digital twin of the semiconductor processing tool, which extends beyond equations based on standard physics and chemistry to model the semiconductor processing tool 500. Further, the ML and / or AI controller 570 can assist in the implementation of MIMO control of the system. As such, improved plasma uniformity can be obtained using the embodiments disclosed herein.

[0055] Now referring to Figure 6 , a process flow diagram of a process 680 for controlling a plasma processing tool is illustrated in accordance with an embodiment. The process 680 can be performed in any plasma processing tool among the plasma processing tools described in more detail herein.

[0056] In an embodiment, the process 680 begins at operation 681, which includes providing a plurality of microwave power sources to support a modular plasma in a chamber. For example, the microwave power sources can be coupled to plasma applicators of a showerhead that passes through a lid of the plasma chamber. The plasma applicators couple microwave power into a process gas in the plasma chamber in order to excite and sustain the plasma. As used herein, a modular plasma can refer to a plasma formed by using a plurality of modular microwave applicators. That is, each region of the modular plasma can be controlled by an overlying microwave applicator and a connected microwave power source.

[0057] In an embodiment, the process 680 can continue at operation 682, which includes obtaining optical signals from the modular plasma using a plurality of optical sensors. For example, OES ports can be provided to pass through the lid of the plasma chamber. The OES ports can be provided around the perimeter of the lid. In other embodiments, the OES ports can be provided in a middle region of the lid. The OES ports can include pin structures of an optically transparent material (e.g., sapphire or quartz).

[0058] In an embodiment, the process 680 can continue at operation 683, which includes transmitting the optical signals to a controller. The optical signals can be transmitted to the controller by optically coupling the OES ports to the controller (e.g., using an optical fiber cable, etc.).

[0059] In an embodiment, process 680 can continue with operation 684, which includes transmitting power parameters to the controller. In an embodiment, the power parameters can include forward power, reflected power, frequency, etc. The power parameters and the optical signal can be used by the controller as feedback.

[0060] In an embodiment, process 680 can continue with operation 685, which includes determining, with the controller, the microwave power and frequency settings of multiple microwave power sources to produce a desired plasma uniformity in the chamber. In some embodiments, the plasma uniformity can refer to plasma density, electron density, plasma temperature, etc. In some cases, the controller can be a simple closed-loop controller. In other embodiments, the controller can utilize ML and / or AI modules to improve process control within the chamber.

[0061] Now refer Figure 7 , a block diagram of an exemplary computer system 700 of a processing tool is illustrated according to an embodiment. In an embodiment, the computer system 700 is coupled to the processing tool and controls the processing in the processing tool. The computer system 700 can be connected (e.g., networked) to other machines in a Local Area Network (LAN), an internal network, an external network, or the Internet. The computer system 700 can operate in the capacity of a server or a client machine in a client-server network environment, or as a peer machine in a peer-to-peer (or distributed) network environment. The computer system 700 can be a personal computer (PC), a tablet PC, a set-top box (STB), a Personal Digital Assistant (PDA), a cellular phone, a network appliance, a server, a network router, a switch, or a bridge, or any machine capable of executing a set of instructions (sequential or otherwise) specifying actions to be taken by that machine. Further, although only a single machine is illustrated for the computer system 700, the term "machine" shall also be understood to include any collection of machines (e.g., computers) that individually or jointly execute a set (or multiple sets) of instructions to perform any one or more of the methods described herein.

[0062] The computer system 700 may include a computer program product or software 722, which may include a machine-readable medium having instructions stored thereon that can be used to program the computer system 700 (or other electronic devices) to perform a process according to an embodiment. The machine-readable medium includes any mechanism for storing or transmitting information in a form readable by a machine (e.g., a computer). For example, the machine-readable (e.g., computer-readable) medium includes a machine (e.g., computer) readable storage medium (e.g., read only memory (“ROM”), random access memory (“RAM”), magnetic disk storage media, optical storage media, flash memory devices, etc.), a machine (e.g., computer) readable transmission medium (electrical, optical, acoustic, or other forms of propagated signals (e.g., infrared signals, digital signals, etc.)), etc.

[0063] In an embodiment, the computer system 700 includes a system processor 702, a main memory 704 (e.g., read-only memory (“ROM”), flash memory, dynamic random access memory (“DRAM”), such as synchronous DRAM (“SDRAM”) or Rambus DRAM (“RDRAM”), etc.), a static memory 706 (e.g., flash memory, static random access memory (“SRAM”), etc.), and an auxiliary memory 718 (e.g., a data storage device), which communicate with each other via a bus 730.

[0064] The system processor 702 represents one or more general-purpose processing devices, such as a microprocessor, a central processing unit, etc. More particularly, the system processor may be a complex instruction set computing (CISC) microprocessor, a reduced instruction set computing (RISC) microprocessor, a very long instruction word (VLIW) microprocessor, a system processor implementing other instruction sets, or a system processor implementing a combination of instruction sets. The system processor 702 may also be one or more special-purpose processing devices, such as an application specific integrated circuit (ASIC), a field programmable gate array (FPGA), a digital signal system processor (DSP), a network system processor, etc. The system processor 702 is configured to execute processing logic 726 to perform the operations described herein.

[0065] The computer system 700 may further include a system network interface device 708 for communicating with other devices or machines. The computer system 700 may also include a video display unit 710 (e.g., a liquid crystal display (LCD), a light emitting diode display (LED), or a cathode ray tube (CRT)), an alphanumeric input device 712 (e.g., a keyboard), a cursor control device 714 (e.g., a mouse), and a signal generating device 716 (e.g., a speaker).

[0066] The secondary memory 718 may include a machine-accessible storage medium 732 (or more particularly, a computer-readable storage medium) on which one or more sets of instructions (e.g., software 722) are stored that embody any one or more of the methods or functions described herein. During execution by the computer system 700, the software 722 may also reside, completely or at least partially, within the main memory 704 and / or the system processor 702, which also constitute machine-readable storage media. The software 722 may also be sent or received over the network 720 via the system network interface device 708. In an embodiment, the network interface device 708 may operate using RF coupling, optical coupling, acoustic coupling, or inductive coupling.

[0067] Although the machine-accessible storage medium 732 is shown as a single medium in the illustrative embodiment, the term "machine-readable storage medium" should be understood to include a single medium or multiple media (e.g., a centralized or distributed database, and / or associated caches and servers) that store one or more sets of instructions. The term "machine-readable storage medium" should also be understood to include any medium that is capable of storing or encoding a set of instructions for execution by a machine and that causes the machine to perform any one or more of the methods in the methods. Thus, the term "machine-readable storage medium" should be understood to include, but not be limited to, solid-state memory as well as optical and magnetic media.

[0068] In the foregoing specification, specific exemplary embodiments have been described. Obviously, various modifications can be made thereto without departing from the scope of the appended claims. Accordingly, the specification and drawings are to be regarded as illustrative rather than restrictive.

Claims

1. A semiconductor processing tool, the semiconductor processing tool comprising: A chamber; A lid configured to seal the chamber; A modular microwave plasma applicator passing through the lid; An optical port passing through the lid and adjacent to the modular microwave plasma source; And A pin inserted into the optical port.

2. The semiconductor processing tool according to claim 1, wherein the pin comprises sapphire or quartz.

3. The semiconductor processing tool according to claim 1, wherein the lid includes a panel and a cover, and wherein the pin passes through both the panel and the cover.

4. The semiconductor processing tool according to claim 3, wherein the pin includes a first portion in the panel and a second portion in the cover, and wherein the first portion is a different part from the second portion.

5. The semiconductor processing tool according to claim 1, wherein the pin includes a first width at a first surface exposed to the chamber and a second width at a second surface exposed to the outside of the chamber.

6. The semiconductor processing tool according to claim 1, wherein the modular microwave plasma applicator comprises: A dielectric body having a hole that enters but does not pass through the dielectric body; And An antenna inserted into the hole.

7. The semiconductor processing tool according to claim 6, wherein a bottom surface of the dielectric body is exposed to the interior of the chamber.

8. The semiconductor processing tool according to claim 1, the semiconductor processing tool further comprising: A plurality of modular microwave plasma applicators, a plurality of optical ports, and a plurality of pins.

9. The semiconductor processing tool according to claim 8, wherein the plurality of optical ports and the plurality of pins are positioned around a perimeter of the semiconductor processing tool.

10. The semiconductor processing tool according to claim 9, the semiconductor processing tool further comprising a substrate in the chamber, and wherein the plurality of optical ports and the plurality of pins are positioned outside a perimeter of the substrate.

11. A semiconductor processing tool, the semiconductor processing tool comprising: A chamber having a lid; A plurality of microwave applicators passing through the lid; A plurality of microwave power sources, wherein each microwave power source of the plurality of microwave power sources is coupled to a different microwave applicator of the plurality of microwave applicators; A plurality of optical ports passing through the lid; And A controller, wherein the plurality of optical ports and the plurality of microwave power sources are communicatively coupled to the controller.

12. The semiconductor processing tool according to claim 11, wherein the controller converts optical signals from the plurality of optical ports into plasma density measurement results.

13. The semiconductor processing tool according to claim 11, wherein the controller is configured to provide microwave parameters to the plurality of microwave power sources to control plasma uniformity within the chamber.

14. The semiconductor processing tool according to claim 13, wherein the microwave parameters include microwave power and microwave frequency.

15. The semiconductor processing tool according to claim 13, wherein individual ones of the plurality of microwave power sources receive different microwave parameters.

16. The semiconductor processing tool according to claim 11, wherein the controller receives feedback from the plurality of microwave power sources.

17. The semiconductor processing tool according to claim 16, wherein the feedback includes forward power, reflected power, and microwave frequency.

18. The semiconductor processing tool according to claim 11, wherein the controller is a machine learning (ML) controller or an artificial intelligence (AI) controller.

19. A method of controlling a plasma process, the method comprising: providing a plurality of microwave power sources to support a modular plasma in a chamber; obtaining optical signals from the modular plasma with a plurality of optical sensors; transmitting the optical signals to a controller; and determining, with the controller, microwave power and frequency settings of the plurality of microwave power sources to produce a desired plasma density uniformity in the chamber.

20. The method according to claim 19, wherein the controller is a machine learning (ML) controller or an artificial intelligence (AI) controller.

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