Showerhead unit, gas supply unit, and substrate processing apparatus having gas supply unit

Abstract

Disclosed are a showerhead unit configured to uniformly discharge gas for a small number of wafer surfaces in a light process, a gas supply unit having the showerhead unit, and a substrate processing apparatus having the gas supply unit. The showerhead unit includes a guide member, an inflow member, and an injection member. The guide member is disposed to cover a substrate disposed within the processing chamber. The inflow member is disposed above the guide member to have a first cushion space therein. The injection member is provided below the guide member to inject a gas supplied from the outside toward the substrate through the first buffer space of the inflow member and the guide member. Accordingly, a cushion space is formed at a central portion of the showerhead unit so that eccentricity does not occur when gas is injected through the showerhead unit, and thus uniform injection can be performed through the injection member.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority of Korean Patent Application No. 10 - 2023 - 0193744, filed with the Korean Intellectual Property Office (KIPO) on December 27, 2023, the content of which is incorporated herein by reference in its entirety. Technical field

[0003] Exemplary embodiments of the present invention relate to a showerhead unit, a gas supply unit having the showerhead unit, and a substrate processing apparatus having the gas supply unit. More specifically, exemplary embodiments of the present invention relate to a showerhead unit configured to uniformly discharge a gas for a minority wafer surface in a photolithography process, a gas supply unit having the showerhead unit, and a substrate processing apparatus having the gas supply unit. Background art

[0004] Generally, in a lithography process in a semiconductor device manufacturing process, a hydrophobization process is performed to improve the adhesion between a semiconductor wafer (hereinafter referred to as a wafer) and a resist liquid. In the above - mentioned hydrophobization process, the surface of the wafer is hydrophobized by supplying hexamethyldisilazane (HMDS) gas to the surface of the wafer disposed in a processing chamber for a predetermined time. Accordingly, peeling of the resist film from the wafer surface can be suppressed in subsequent steps.

[0005] For a processing chamber for the hydrophobization process, a structure is required such as making the concentration of HMDS gas leaking to the outside of the processing chamber less than or equal to a predetermined concentration. When HMDS gas leaks to the outside of the processing chamber, HMDS gas reacts with moisture in the air to cause particles or generate ammonia, which adversely affects the resist.

[0006] Meanwhile, conventional hydrophobization equipment employs an orifice structure as a central vertical injection structure. That is, HMDS gas is injected from the center to the nozzle and discharged from the edge. When HMDS gas is vertically injected from the center, there is a problem of a large deviation occurring between the center and the edge portions based on the wafer. Summary of the invention

[0007] Exemplary embodiments of the present invention provide a showerhead unit having a buffer space formed therein, such that a gas for hydrophobizing a wafer surface can be uniformly discharged in a photolithography process.

[0008] Exemplary embodiments of the present invention also provide a gas supply unit having the above - mentioned showerhead unit.

[0009] Exemplary embodiments of the present invention further provide a substrate processing apparatus having the above - mentioned gas supply unit.

[0010] According to one aspect of the present invention, the showerhead unit includes a guiding member, an inflow member, and an injection member. The guiding member is disposed to cover a substrate disposed in a processing chamber. The inflow member is disposed above the guiding member to have a first buffer space therein. The injection member is disposed below the guiding member to inject a gas supplied from the outside toward the substrate through the first buffer space of the inflow member and the guiding member.

[0011] In an exemplary embodiment, a central hole may be formed in a central portion of the guiding member to move the gas, and the central hole may communicate with the first buffer space.

[0012] In an exemplary embodiment, the diameter of the first buffer space may be greater than the diameter of the central hole.

[0013] In an exemplary embodiment, an exhaust path may be formed in a peripheral region of the guiding member for gas discharge.

[0014] In an exemplary embodiment, a first inflow hole may be formed at one side of the inflow member, and the first inflow hole penetrates into the first buffer space to allow the gas to flow in.

[0015] In an exemplary embodiment, a second buffer space and a second inflow hole may also be formed at the other side of the inflow member. The second buffer space communicates with the first buffer space for gas inflow, and the second inflow hole penetrates into the second buffer space.

[0016] In an exemplary embodiment, the second buffer space may be formed to surround a part of the first buffer space.

[0017] In an exemplary embodiment, an exhaust hole may be formed on a side of the inflow member, and the exhaust hole penetrates into the first buffer space for gas discharge.

[0018] In an exemplary embodiment, the showerhead unit may further include a partition member disposed in the first buffer space of the inflow member to have a cylindrical shape, and the cylindrical shape has a hole formed in an upper region.

[0019] In an exemplary embodiment, the partition member may have a diameter narrower than the width of the first buffer space.

[0020] In an exemplary embodiment, the partition member may define a path that receives the gas flowing along an outer circumferential surface and supplies the gas to a hole formed in the guiding member.

[0021] In an exemplary embodiment, a plurality of lower holes may be formed in a lower region of the injection member. The central axis of the lower holes faces downward for vertically injecting gas, and the lower holes may be formed symmetrically.

[0022] In an exemplary embodiment, a plurality of inclined holes may be formed in a side region of the injection member. The inclined holes have a predetermined inclination angle with respect to a reference surface of the substrate for injecting inclined gas, and the inclined holes may be formed symmetrically.

[0023] In an exemplary embodiment, the inclination angle may be from about 0 degrees to about 15 degrees based on the reference surface.

[0024] According to another aspect of the present invention, a gas supply unit includes a gas supply line and a showerhead unit. The gas supply line provides a gas flow path to a processing space of a substrate. The showerhead unit uniformly supplies the gas provided through the gas supply line to an entire area of the substrate. The showerhead unit includes a guiding member, an inflow member, and an injection member. The guiding member is arranged to cover the substrate. The inflow member is arranged above the guiding member to have a first buffer space in the inflow member. The injection member is arranged below the guiding member to inject the gas supplied from the outside through the first buffer space of the inflow member and the guiding member toward the substrate.

[0025] According to still another aspect of the present invention, a substrate processing apparatus includes a processing chamber, a support unit, a heating unit, an exhaust unit, and a gas supply unit. The processing chamber provides a processing space for heating a substrate. The support unit supports the substrate in the processing space. The heating unit heats the substrate supported by the support unit. The exhaust unit discharges the atmosphere of the processing space. The gas supply unit includes a gas supply line and a showerhead unit. The gas supply line provides a gas flow path to a processing space of a substrate. The showerhead unit uniformly supplies the gas provided through the gas supply line to an entire area of the substrate. The showerhead unit includes a guiding member, an inflow member, and an injection member. The guiding member is arranged to cover the substrate. The inflow member is arranged above the guiding member to have a first buffer space in the inflow member. The injection member is arranged below the guiding member to inject the gas supplied from the outside through the first buffer space of the inflow member and the guiding member toward the substrate.

[0026] According to the showerhead unit, the gas supply unit having the showerhead unit, and the substrate processing apparatus having the gas supply unit, a buffer space is formed in a central portion of the showerhead unit so that no eccentricity occurs when gas is injected through the showerhead unit, and thus uniform injection can be performed through the injection member. Brief Description of the Drawings

[0027] The above and other features and aspects of the present invention will become more apparent by describing in detail exemplary embodiments of the present invention with reference to the accompanying drawings, in which:

[0028] Figure 1 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention;

[0029] Figure 2 shows Figure 1 a cross-sectional view of the substrate processing apparatus of the coating block or the developing block shown in;

[0030] Figure 3 is Figure 1 a plan view of the substrate processing apparatus shown in;

[0031] Figure 4 is a cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment of the present invention;

[0032] Figure 5 shows Figure 4 a rear perspective view of the shower head unit shown in;

[0033] Figure 6 shows Figure 4 a cross-sectional view of the shower head unit shown in;

[0034] Figure 7 shows Figure 6 a cross-sectional perspective view of the inflow member of the shower head unit shown in;

[0035] Figure 8 shows Figure 6 a perspective view of the injection member shown in;

[0036] Figure 9 shows Figure 4 a perspective view of another example of the shower head unit shown in;

[0037] Figure 10 shows Figure 9 a plan view of the shower head unit shown in;

[0038] Figure 11 shows Figure 10 a cross-sectional view of the shower head unit shown in; and

[0039] Figure 12 shows Figure 4 a cross-sectional perspective view of another example of the shower head unit shown in. Detailed Description of the Invention

[0040] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, the present invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the dimensions and relative dimensions of layers and regions may be exaggerated for clarity.

[0041] It will be understood that when an element or layer is referred to as being "on," "connected to" or "coupled to" another element or layer, it can be on, connected to or coupled to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. The same reference numerals always refer to the same elements. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0042] It will be understood that although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another. Thus, a first element, first component, first region, first layer or first section discussed below may be termed a second element, second component, second region, second layer or second section without departing from the teachings of the present invention.

[0043] For ease of description, spatial relative terms, such as "beneath," "below," "lower," "above," "upper," etc., may be used herein to describe the relationship of one element or feature to another (elements or features) as shown in the figures. It will be understood that the spatial relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, an element described as "beneath" or "below" other elements or features will then be oriented "above" the other elements or features. Thus, the exemplary term "beneath" can encompass both an orientation of above and below. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial relative descriptors used herein are to be interpreted accordingly.

[0044] The terms used herein are for the purpose of describing particular exemplary embodiments only and are not intended to limit the present invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that when the terms "comprises" and / or "comprising" are used in this specification, they specify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof.

[0045] Exemplary embodiments of the present invention are described herein with reference to cross-sectional views that are schematic illustrations of idealized exemplary embodiments (and intermediate structures) of the present invention. Accordingly, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances are to be expected. Thus, exemplary embodiments of the present invention should not be construed as limited to the specific shapes of regions shown herein, but should include, for example, deviations in shapes resulting from manufacturing. For example, an implantation region shown as rectangular will typically have rounded or curved features at its edges and / or a gradient of implantation concentration, rather than a binary change from the implantation region to the non-implantation region. Similarly, a buried region formed by implantation may result in some implantation in the region between the buried region and the surface through which the implantation occurs. Thus, the regions shown in the figures are schematic in nature, and their shapes are not intended to show the actual shape of the regions of the device and are not intended to limit the scope of the present invention.

[0046] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless clearly defined herein.

[0047] Hereinafter, the present invention will be explained in detail with reference to the accompanying drawings.

[0048] Figure 1 is a perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention. Figure 2 shows Figure 1 a cross-sectional view of the substrate processing apparatus of the coating block or the developing block shown in Figure 3 is Figure 1 a plan view of the substrate processing apparatus shown in

[0049] Refer to Figures 1 to 3, the substrate processing apparatus 10 according to an exemplary embodiment of the present invention includes an index module 100, a processing module 300, buffer modules 400a and 400b, and an interface module 500. Hereinafter, the direction in which the index module 100, the processing module 300, the buffer modules 400a and 400b, and the interface module 500 are arranged is defined as a first direction 12. When viewed from the top, the direction perpendicular to the first direction 12 is defined as a second direction 14. The direction perpendicular to both the first direction 12 and the second direction 14 is defined as a third direction 16.

[0050] The index module 100 transfers the substrate W from the container F that receives the substrate W to the processing module 300, and receives the processed substrate W into the container F. The longitudinal direction of the index module 100 is set in the second direction 14. The index module 100 includes a load port 110 and an index frame 130. The load port 110 and the processing module 300 are provided on opposite sides of the index frame 130. The container F in which the substrate W is accommodated is placed in the load port 110. A plurality of load ports 110 may be provided, and a plurality of load ports 110 may be arranged in the second direction 14.

[0051] As the container F, a sealed container F such as a front opening unified pod (FOUP) may be used. The container F may be placed in the load port 110 by a transfer device (not shown) such as an overhead transfer, an overhead conveyor, or an automated guided vehicle (AGV) or an operator.

[0052] An index robot 132 is provided inside the index frame 130. In the index frame 130, a guide rail 136 having a longitudinal direction set in the second direction 14 may be provided, and the index robot 132 may be provided to be movable on the guide rail 136. The index robot 132 includes a hand on which the substrate W is placed. The hand may be provided to move forward and backward, rotate about the third direction 16, and be movable along the third direction 16.

[0053] The processing module 300 may perform a coating process and a developing process on the substrate W. The processing module 300 may receive the substrate W accommodated in the container F to perform a substrate processing process. The processing module 300 has a plurality of coating blocks 300a and a plurality of developing blocks 300b. The plurality of coating blocks 300a perform a coating process on the substrate W, and the plurality of developing blocks 300b perform a developing process on the substrate W. The coating blocks 300a are provided to be stacked on one another. The developing blocks 300b are provided to be stacked on one another. According to Figure 1In an exemplary embodiment, two coating blocks 300a and two developing blocks 300b are provided respectively. The coating block 300a may be disposed below the developing block 300b. According to the exemplary embodiment, the two coating blocks 300a may perform the same process and may be provided in the same structure. In addition, the two developing blocks 300b may perform the same process and may be provided in the same structure.

[0054] Referring to Figure 3 , the coating block 300a includes a heat treatment chamber 320, a transfer chamber 350, and a liquid treatment chamber 360. The heat treatment chamber 320 performs a heat treatment process on the substrate W. The heat treatment process may include a cooling process and a heating process. The liquid treatment chamber 360 forms a liquid film by supplying a liquid onto the substrate W. The liquid film may be a photoresist film or an anti-reflection film. The transfer chamber 350 transfers the substrate W between the heat treatment chamber 320 and the liquid treatment chamber 360 in the coating block 300a.

[0055] The transfer chamber 350 is provided with a longitudinal direction parallel to the first direction 12. A transfer robot 352 is provided in the transfer chamber 350. The transfer robot 352 transports the substrate between the heat treatment chamber 320, the liquid treatment chamber 360, and the buffer modules 400a and 400b. According to the exemplary embodiment, the transfer robot 352 has a hand on which the substrate W is placed. The hand may be provided to move forward and backward, rotate about the third direction 16, and be movable along the third direction 16. A guide rail 356 having a longitudinal direction parallel to the first direction 12 is provided in the transfer chamber 350, and the transfer robot 352 may be provided to be movable on the guide rail 356.

[0056] A plurality of buffer modules 400a and 400b are provided. Some of these buffer modules 400a and 400b are disposed between the indexing module 100 and the processing module 300. Hereinafter, the buffer modules 400a and 400b are referred to as front-end buffers 400a. A plurality of front-end buffers 400a are provided, and the plurality of front-end buffers 400a are positioned to be stacked on top of each other in the vertical direction. Other buffer modules 400a and 400b are disposed between the processing module 300 and the interface module 500. Hereinafter, these buffer modules 400a and 400b are referred to as back-end buffers 400b. A plurality of back-end buffers 400b are provided, and the plurality of back-end buffers 400b are positioned to be stacked on top of each other in the vertical direction. Each of the front-end buffer 400a and the back-end buffer 400b temporarily stores a plurality of substrates W. The substrates W stored in the front-end buffer 400a are transferred in or out by the indexing robot 132 and the transfer robot 352. The substrates W stored in the back-end buffer 400b are transferred in or out by the transfer robot 352 and the first robot 552.

[0057] Figure 4 It is a cross-sectional view showing a substrate processing apparatus according to an exemplary embodiment of the present invention. Figure 4 The substrate processing apparatus 1000 shown therein may be one of the heating units 3230 provided to some of the heat treatment chambers shown in Figure 1 Reference Figure 4 , the heating unit 3230 includes a processing chamber 1100, a support unit 1300, a heating unit 1400, an exhaust unit 1700, a gas supply unit 1600, and an air curtain unit 1900.

[0058] The processing chamber 1100 provides a processing space 1110 for heat-treating a substrate W therein. The processing space 1110 is provided as a space insulated from the outside. The processing chamber 1100 includes an upper body 1120 and a lower body 1140. The upper body 1120 is provided in a cylindrical shape with an open lower portion. For example, the upper body 1120 may have a cylindrical shape. An opening is formed in the upper surface of the upper body 1120. The opening may be formed in a region corresponding to the central axis of the upper body 1120. Similar to the upper body 1120, the lower body 1140 is provided in a cylindrical shape with an open upper portion. For example, the lower body 1140 may have a cylindrical shape. The lower body 1140 is located below the upper body 1120. The upper body 1120 and the lower body 1140 are positioned to face each other in the vertical direction. The upper body 1120 and the lower body 1140 are combined to form the processing space 1110 therebetween. The central axes of the upper body 1120 and the lower body 1140 are positioned to coincide with each other in the vertical direction. The lower body 1140 may have substantially the same diameter as the upper body 1120. That is, the upper end of the lower body 1140 may be positioned to face the lower end of the upper body 1120.

[0059] In one example, one of the upper body 1120 and the lower body 1140 may be moved to an open position and a processing position by a driver 1130, and the other may be fixed in place. According to the example, the position of the lower body 1140 is fixed, and the upper body 1120 may be moved between the open position and the processing position by the driver 1130. Here, the open position is a position where the upper body 1120 and the lower body 1140 are spaced apart from each other to open the processing space 1110. The processing position is a position when processing the substrate in the processing space 1110. In one example, the processing position may be a position where the upper body 1120 and the lower body 1140 are spaced apart at a predetermined interval.

[0060] For example, there may be a gap of about 1 mm to about 10 mm between the side surfaces of the upper body 1120 and the lower body 1140 at the processing position. In one example, the open position is the position where the driver 1130 moves the upper body 1120 upward to open the processing chamber 1100 when transporting the substrate W into or out of the processing space 1110. In the present embodiment, the driver 1130 is connected to the upper body 1120, but the driver 1130 may be connected to the lower body 1140 to lift or lower the lower body 1140.

[0061] The support unit 1300 supports the substrate W in the processing space 1110. The support unit 1300 is fixed and coupled to the lower body 1140. The support unit 1300 includes a placement plate 1320 and lift pins 1340. The placement plate 1320 supports the substrate W in the processing space 1110. The placement plate 1320 has a circular plate shape. The substrate W may be placed on the upper surface of the placement plate 1320. The region of the upper surface of the placement plate 1320 including its center serves as a placement surface on which the substrate W is placed. The lift pins 1340 are provided to move in the vertical direction. The lift pins 1340 lift the substrate W from the placement plate 1320 or mount the substrate W on the placement plate 1320.

[0062] The heating unit 1400 performs a heat treatment process for applying heat to the substrate W placed on the placement plate 1320. The heating unit 1400 is disposed in the placement plate 1320. In one example, the heating unit 1400 may be provided as a plurality of heaters. In one example, the regions of the placement plate 1320 corresponding to each heater may be provided as separate heating zones. For example, each heater may be provided such that the temperature can be independently adjusted. Each heater may be a thermoelectric element or a heating wire.

[0063] The exhaust unit 1700 includes a main exhaust line 1795, a pressure reducing member 1792, and a regulating valve 1794 to exhaust the atmosphere of the processing space 1110. In an example, the exhaust unit 1700 forcibly exhausts the external air introduced into the processing space 1110. The exhaust unit 1700 is connected to the main exhaust line 1795. The pressure reducing member 1792 and the regulating valve 1794 are disposed in the main exhaust line 1795. The pressure reducing member 1792 provides a reduced pressure to the main exhaust line 1795 to exhaust the processing space 1110. The regulating valve 1794 regulates the pressure supplied to the pressure reducing member 1792 of the main line.

[0064] The gas supply unit 1600 is disposed above the support unit 1300. The gas supply unit 1600 supplies gas to the processing space 1110. In one example, the gas supply unit 1600 has a gas supply line 1674 and a showerhead unit 1680. The gas supply line 1674 supplies the gas provided from the gas supply source 1671 to the processing space 1110. Here, gas is supplied to the processing space 1110 during heating of the substrate W to improve the adhesion rate of the photoresist to the substrate W. According to an example, the gas may be hexamethyldisilazane (HMDS) gas. The HMDS gas can change the property of the substrate W from hydrophilic to hydrophobic. In one example, the HMDS gas can be provided by mixing with a carrier gas. In one example, the carrier gas can be provided as an inert gas. For example, the inert gas may be nitrogen. A gas control valve 1676 is disposed on the gas supply line 1674. The gas control valve 1676 regulates whether to supply gas to the processing space 1110 and regulates the supply flow rate.

[0065] In one example, the gas supply line 1674 is disposed at a position corresponding to the central region of the substrate placed on the support unit 1300. In one example, the gas supplied to the processing space 1110 is not directly supplied onto the substrate, but is supplied via the showerhead unit 1680. The showerhead unit 1680 performs an operation such that the gas supplied to the processing space 1110 can be uniformly provided over the entire area of the substrate.

[0066] In one example, the showerhead unit 1680 is provided in a size corresponding to the upper surface of the substrate placed on the support unit 1300.

[0067] When processing the substrate W in the processing space 1110, the air curtain unit 1900 prevents the atmosphere inside the processing space 1110 from flowing out. Further, when processing the substrate W in the processing space 1110, the air curtain unit 1900 prevents external air from flowing into the processing space 1110. In one example, the air curtain unit 1900 includes a gas supply line 1920, supply holes 1930, and a gas supply source 1910. The gas supply line 1920 receives gas from the gas supply source 1910 and supplies the gas to the supply holes 1930. A control valve 1922 is installed in the gas supply line 1920. The control valve 1922 controls whether to supply gas to the supply holes 1930 and controls the supply flow rate of the gas. In one example, when processing the substrate W in the processing space 1110, the supply holes 1930 eject gas into the space between the upper body 1120 and the lower body 1140. In an example, the gas may include nitrogen.

[0068] Figure 5 is a rear perspective view of the showerhead unit 1680 shown Figure 4 in.Figure 6 is a cross-sectional view showing Figure 4 the shower head unit 1680 shown in

[0069] Referring to Figure 4 、 Figure 5 and Figure 6 , the shower head unit 1680 includes a guiding member 210, an inflow member 220 protruding upward from the guiding member 210, and an injection member 230 protruding downward from the guiding member 210 and injecting gas into a substrate disposed therebelow. In an embodiment, the guiding member 210, the inflow member 220, and the injection member 230 may be integrally formed to define the shower head unit 1680. In another embodiment, the guiding member 210, the inflow member 220, and the injection member 230 may be separately manufactured and then fastened to define the shower head unit 1680. Here, the gas may be a hydrophobic gas that hydrophobizes the substrate W. According to an embodiment, the hydrophobic gas may be HMDS gas.

[0070] The guiding member 210 is arranged to cover the substrate. The guiding member 210 includes a main body member 212 having a disk shape and an edge member 214 protruding downward from the main body member 212. A central hole 216 is formed in a central portion of the guiding member 210 for moving gas. In addition, an exhaust path 218 is formed in a peripheral region of the guiding member 210 for gas discharge. In this way, since a separate central exhaust path 218 is formed in the guiding member 210, a uniform hydrophobic environment with edge exhaust during supersaturation can be formed.

[0071] The inflow member 220 is arranged to protrude from an upper portion of the guiding member 210, and a first buffer space 222 is formed in the inflow member 220. An exhaust hole (not shown) is formed in a side portion of the inflow member 220, and the exhaust hole penetrates into the first buffer space 222 for discharging gas. The first buffer space 222 communicates with the central hole 216 formed in the guiding member 210. A partitioning member 224 having a diameter substantially narrower than the width of the first buffer space 222 is disposed in the first buffer space 222. The partitioning member 224 has a cylindrical shape having a hole formed in an upper region. Here, the partitioning member 224 receives gas flowing along an outer peripheral surface through the hole formed in the upper region of the cylindrical shape and supplies the gas to the central hole 216 formed in the guiding member 210.

[0072] The injection member 230 is arranged to protrude from a lower portion of the guiding member 210. The injection member 230 injects gas supplied from the outside and passing through the first buffer space 222 of the inflow member 220 and the guiding member 210 toward the substrate.

[0073] As described above, the first buffer space 222 is formed inside the central portion of the showerhead unit 1680 such that eccentricity does not occur when gas is injected through the showerhead unit 1680, so that uniform gas injection can be performed through the injection member 230.

[0074] Figure 7 is a cross-sectional perspective view showing Figure 6 the inflow member of the showerhead unit shown in. Specifically, Figure 7 is from the upper part and the lower part of the area corresponding to the first inflow hole 226 formed in the inflow member 220 shown in Figure 6 each extracted cross-sectional perspective view.

[0075] Refer to Figure 6 and Figure 7 , the first inflow hole 226 penetrating into the first buffer space 222 for gas inflow is formed in a side area of the inflow member 220. The holes formed in each of the outermost area and the inner area of the outermost area of the inflow member 220 are fastening holes (not shown) for coupling with the guiding member 210.

[0076] The separating member 224 is disposed in the first buffer space 222 of the inflow member 220 and has a cylindrical shape with a hole formed in the upper area. The separating member 224 may have a diameter narrower than the width of the first buffer space 222.

[0077] In another area of the inflow member 220, a second inflow hole 227 is formed for gas inflow. The second inflow hole 227 penetrates into a second buffer space 223 formed to surround the first buffer space 222. In Figure 7 , the second buffer space 223 is formed as a part surrounding the first buffer space 222. Although not shown, the second buffer space 223 is connected to penetrate into the first buffer space 222.

[0078] Therefore, the gas introduced into the second inflow hole 227 reaches the first buffer space 222 via the second buffer space 223. The gas reaching the first buffer space 222 reaches the inside of the separating member 224 through the hole 225 formed in the separating member 224, and then is supplied to the injection member 230 through the central hole 216 formed in the guiding member 210.

[0079] In the present embodiment, the formation of the first buffer space 222 and the second buffer space 223 communicating with the first buffer space 222 is exemplarily shown, the first inflow hole 226 penetrates into the first buffer space 222, and the second inflow hole 227 penetrates into the second buffer space 223.

[0080] In this manner, by forming the second inflow hole 227 and the second buffer space 223 separately from the first inflow hole 226 and the first buffer space 222, the airflow moment in the internal buffer space can be minimized.

[0081] Although not shown in Figure 7 , a third buffer space (not shown) communicating with the second buffer space 223 may be additionally formed, and a third inflow hole (not shown) penetrating into the third buffer space may be further formed. That is, a plurality of buffer spaces may be formed inside the inflow member 220, and the gas introduced into the buffer spaces may finally be saturated in the central portion of the shower head unit 1680 and sprayed downward.

[0082] Figure 8 is a perspective view showing Figure 6 the injection member 230 shown in

[0083] Referring to Figure 8 , the injection member 230 has a disk shape including a predetermined thickness to communicate with the central hole 216 formed in the guide member 210.

[0084] A plurality of lower holes 232 are formed in the lower region of the injection member 230, and the central axis planes of the lower holes 232 face downward. Here, the lower holes 232 are symmetrically formed. The gas is vertically injected through the lower holes 232.

[0085] In addition, a plurality of inclined holes 234 having a central axis inclined with respect to the reference surface of the substrate are formed in the side region of the injection member 230. The gas is injected through the inclined holes 234 in the inclined direction. Here, the inclined holes 234 are symmetrically formed. In addition, based on the reference surface of the substrate, the inclined angle may be about 0° to about 15°. In the present embodiment, the inclined angles of the inclined holes 234 facing each other may be substantially the same.

[0086] Figure 9 is a perspective view showing Figure 4 another example of the shower head unit shown in Figure 10 is a perspective view showing Figure 9 the plan view of the shower head unit shown in Figure 11 is a perspective view showing Figure 10 the cross-sectional view of the shower head unit shown in

[0087] Referring to Figure 9 , Figure 10 and Figure 11 , the shower head unit 2680 according to another example includes a guide member 2682 formed in the horizontal direction and an orifice member 2684 protruding downward from the guide member 2682, and sprays gas onto a substrate disposed therebelow.

[0088] The guiding member 2682 provides a gas flow path.

[0089] The orifice member 2684 is formed to have a plurality of through holes 2685. The through holes 2685 pass through the orifice member 2684 in the thickness direction of the orifice member 2684, that is, in the direction in which the gas flows from the top to the bottom (in the case of Figure 9 in the direction in which the gas flows from the top to the bottom) (in the case of Figure 11 in the direction in which the gas flows from the left to the right). A pressure difference occurs before and after the orifice member 2684, and the gas passes through the through holes 2685 of the orifice member 2684 due to this pressure difference. Although the through holes 2685 are shown as having a hexagonal shape when observed in a plan view, the through holes 2685 can be formed in various shapes such as circular, elliptical, or polygonal when observed in a plan view.

[0090] Figure 12 is a cross-sectional perspective view showing another example of the showerhead unit shown in Figure 4

[0091] Referring to Figure 12 , the showerhead unit 3680 according to another example includes an upper body member 3682, a lower body member 3684, and a fastening member 3686.

[0092] The upper body member 3682 has a flat cylindrical shape and is fastened to the lower body member 3684 by the fastening member 3686. A first protruding member 3683 that protrudes sharply downward and a first flow path surrounding the first protruding member 3683 are formed in the lower central region of the upper body member 3682.

[0093] The lower body member 3684 has a flat cylindrical shape that is fastened to the upper body member 3682 by the fastening member 3686. A second flow path is formed in the lower body member 3684, which surrounds the first protruding member 3683 with a predetermined gap while corresponding to the first flow path formed in the upper body member 3682. A second protruding member 3685 that protrudes downward from the central portion of the lower body member 3684 is formed in the lower body member 3684. A hole is formed in the central portion of the second protruding member 3685 such that the tip of the first protruding member 3683 is exposed. The diameter of the hole formed in the second protruding member 3685 increases as the distance from the tip of the first protruding member 3683 increases. That is, the hole formed in the second protruding member 3685 has a funnel shape extending downward.

[0094] ​When observing the showerhead unit in cross-section, the second space SP2 defined by the tip portion of the first protruding member 3683 and the second flow path is narrower than the first space SP1 defined by the first flow path and the second flow path. Additionally, the third space SP3 defined by the shape of the funnel formed in the second protruding member 3685 is wider than the second space SP2. Therefore, when the fluid in the first space SP1 passes through the second space SP2 and reaches the third space SP3, a pressure difference occurs.

[0095] The showerhead unit 3680 may further include an upper O-ring 3688 and a lower O-ring 3689. The upper O-ring 3688 is disposed between the upper body member 3682 and the lower body member 3684. When the showerhead unit 3680 is fastened to the hole formed in the processing chamber, the lower O-ring 3689 is disposed between the showerhead unit 3680 and the processing chamber.

[0096] As described above, according to the present invention, a buffer space is formed in the central portion of the showerhead unit so that no eccentricity occurs when gas is ejected through the showerhead unit, and thus uniform injection can be performed through the injection member.

[0097] Exemplary embodiments of the present invention have been described. Further note that it is obvious to those of ordinary skill in the art that various modifications can be made without departing from the spirit and scope of the present invention defined by the bounds and scope of the appended claims.

Claims

1. A shower head unit, comprising: a guide member configured to cover a substrate disposed in the processing chamber; an inflow member disposed above the guide member so as to have a first buffer space in the inflow member; as well as An injection member is disposed below the guide member to inject a gas supplied from the outside toward the substrate through the first buffer space of the inflow member and the guide member.

2. The shower head unit according to claim 1, wherein: A central hole is formed in a central portion of the guide member to move gas, and the central hole communicates with the first buffer space.

3. The shower head unit according to claim 2, wherein: The diameter of the first buffer space is greater than the diameter of the central hole.

4. The shower head unit according to claim 1, wherein: An exhaust path is formed in a peripheral area of ​​the guide member for gas discharge.

5. The shower head unit according to claim 1, wherein: A first inflow hole is formed at one side portion of the inflow member, the first inflow hole penetrating into the first buffer space to allow gas to flow in.

6. The shower head unit according to claim 5, wherein: A second buffer space and a second inflow hole are further formed at the other side of the inflow member. The second buffer space is communicated with the first buffer space for gas inflow, and the second inflow hole penetrates into the second buffer space.

7. The shower head unit according to claim 6, wherein: The second buffer space is formed to surround a portion of the first buffer space.

8. The shower head unit according to claim 1, wherein: An exhaust hole is formed on a side of the inflow member, the exhaust hole penetrating into the first buffer space for exhausting gas.

9. The showerhead unit according to claim 1, further comprising: A partition member is provided in the first buffer space of the inflow member to have a cylindrical shape having a hole formed in an upper region.

10. The shower head unit according to claim 9, wherein: The partition member has a diameter narrower than a width of the first buffer space.

11. The shower head unit according to claim 9, wherein: The partition member defines a path that receives gas flowing along an outer circumferential surface and supplies the gas to a hole formed in the guide member.

12. The shower head unit according to claim 1, wherein: A plurality of lower holes are formed in a lower region of the injection member, central axes of the lower holes face downward for vertically injecting gas, and the lower holes are symmetrically formed.

13. The shower head unit according to claim 1, wherein: A plurality of inclined holes are formed in a side region of the injection member, the inclined holes having a predetermined inclined angle with a reference surface of the substrate to inject an inclined gas, and the inclined holes are symmetrically formed.

14. The shower head unit according to claim 13, wherein: The inclination angle is 0 to 15 degrees based on the reference surface.

15. A gas supply unit, comprising: A gas supply line providing a gas flow path to a processing space of a substrate; as well as A showerhead unit is configured to uniformly supply the gas provided through the gas supply line to the entire area of ​​the substrate, wherein the showerhead unit comprises: a guide member, configured to cover the substrate; an inflow member disposed above the guide member to have a first buffer space in the inflow member; and An injection member is disposed below the guide member to inject a gas supplied from the outside toward the substrate through the first buffer space of the inflow member and the guide member.

16. The gas supply unit according to claim 15, wherein: A central hole is formed in a central portion of the guide member to move gas, and the central hole communicates with the first buffer space.

17. The gas supply unit according to claim 15, further comprising: A partition member is provided in the first buffer space of the inflow member to have a cylindrical shape having a hole formed in an upper region.

18. A substrate processing device comprising: a processing chamber providing a processing space for heating a substrate; a supporting unit for supporting the substrate in the processing space; a heating unit that heats the substrate supported by the supporting unit; an exhaust unit for exhausting the atmosphere of the processing space; as well as A gas supply unit, comprising a gas supply line and a shower head unit, wherein the gas supply line provides a gas flow path to a processing space of a substrate, and the shower head unit uniformly supplies the gas provided by the gas supply line to the entire area of ​​the substrate, wherein the shower head unit comprises: a guide member, configured to cover the substrate; an inflow member disposed above the guide member to have a first buffer space in the inflow member; and An injection member is disposed below the guide member to inject a gas supplied from the outside toward the substrate through the first buffer space of the inflow member and the guide member.

19. The substrate processing apparatus according to claim 18, wherein: A central hole is formed in a central portion of the guide member to move gas, and the central hole communicates with the first buffer space.

20. The substrate processing apparatus according to claim 18, further comprising: A partition member is provided in the first buffer space of the inflow member to have a cylindrical shape having a hole formed in an upper region.

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