Grinding wheel self-sharpening enhancement method, device and wafer thinning equipment

Abstract

The present application relates to the field of semiconductor wafer processing technology, and provides a method, device, and wafer thinning equipment for enhancing the self-sharpening property of a grinding wheel. The method includes: determining the main flushing position: judging whether the grinding wheel is for external blade processing based on the position of the grinding line of the grinding wheel grinding the wafer and the rotation direction of the wafer. If so, the main flushing position is the outside of the grinding wheel; otherwise, the main flushing position is the inside of the grinding wheel; setting the spray pressure and oscillation frequency of the rinser at the main flushing position to be greater than the spray pressure and oscillation frequency of the rinser on the opposite side; determining the flushing direction of the rinser based on the adhesion state of the abrasive particles forming the grinding wheel and the adhesion state of the contaminants on the grinding wheel; and adjusting the spray pressure and oscillation frequency of the rinser based on the ratio of the grinding wheel feed speed to the set feed speed during the grinding process. The present application can effectively enhance the self-sharpening property of the grinding wheel, while providing protection for the grinding teeth and improving the quality and efficiency of wafer thinning.

Description

Technical Field

[0001] The present application relates to the field of semiconductor wafer processing technology, and in particular to a method and device for enhancing the self-sharpening property of a grinding wheel and a wafer thinning device. Background Art

[0002] Usually before integrated circuit packaging, it is necessary to remove a certain thickness of excess base material from the back of the wafer. This process is called wafer back thinning process, and the corresponding equipment is wafer thinning equipment. With the development and progress of advanced packaging technology, the product structure to be dealt with in the thinning stage has become more complex, and has gradually evolved from processing wafers of a single material to processing wafers of composite materials. When the grinding wheel processes wafers of composite materials, due to the coexistence of heterogeneous materials such as epoxy resin materials, metal materials, silicon, and glue, the adhesion of the debris after grinding is more complex. The debris will adhere to the side wall of the grinding wheel or the bottom of the grinding teeth as the grinding wheel rotates, making the grinding wheel passivated and insufficient in self-sharpening, affecting the grinding thinning effect and product quality. In the prior art, the self-sharpening of the grinding wheel is mainly achieved by replacing the grinding wheel or adjusting the processing parameters, but these methods are inefficient, costly, and difficult to meet the requirements of high-precision processing. Summary of the Invention

[0003] The present application provides a method and device for enhancing the self-sharpening property of a grinding wheel and a wafer thinning device to solve or alleviate at least some of the problems mentioned above.

[0004] According to one aspect of the present application, a method for enhancing the self-sharpening properties of a grinding wheel is provided. The grinding wheel is used to grind wafers in a wafer thinning device. Flushing devices are provided on the inner side, outer side, and bottom of the grinding wheel, respectively. The flushing devices spray a cleaning liquid onto the grinding wheel. The method comprises:

[0005] Determine the main flushing position: Based on the position of the grinding line of the grinding wheel and the rotation direction of the wafer, determine whether the grinding wheel is an external blade processing. If so, the main flushing position is the outside of the grinding wheel; otherwise, the main flushing position is the inside of the grinding wheel;

[0006] Setting the spray pressure and oscillation frequency of the flusher at the main flushing position to be greater than the spray pressure and oscillation frequency of the flusher on the opposite side;

[0007] determining a flushing direction of a flusher based on an adhesion state of abrasive grains forming the grinding wheel and an adhesion state of contaminants on the grinding wheel;

[0008] Based on the ratio of the feed speed of the grinding wheel to the set feed speed during the grinding process, the spray pressure and the oscillation frequency of the rinser are adjusted.

[0009] Optionally, the method further includes: as the rotation rate of the grinding wheel increases, increasing the spray pressure and oscillation frequency of the inner, outer and bottom rinsers to reduce the dispersion effect of the air layer around the grinding wheel caused by the rotation of the grinding wheel on the cleaning liquid, and the increase in the spray pressure and oscillation frequency of the inner and outer rinsers is greater than the increase in the spray pressure and oscillation frequency of the bottom rinser.

[0010] Optionally, the grinding line extends from the center of the wafer to the edge of the wafer; judging whether the grinding wheel is external blade processing based on the position of the grinding line of the grinding wheel grinding the wafer and the rotation direction of the wafer includes: when the rotation direction of the part of the wafer located outside the grinding wheel is toward the grinding line, it is determined to be external blade processing; when the rotation direction of the part of the wafer located outside the grinding wheel is away from the grinding line, it is determined to be internal blade processing.

[0011] Optionally, determining the flushing direction of the flusher based on the adhesion state of abrasive particles forming the grinding wheel and the adhesion state of contaminants on the grinding wheel includes:

[0012] The initial direction of the flusher is set so that its component along the tangential direction of the grinding wheel is in the same direction as the tangential speed of the grinding wheel, and the spray pressure is gradually increased from the initial value to the maximum value. If the feed speed of the grinding wheel gradually increases from lower than the set feed speed to the same as the set feed speed and the wear of the grinding wheel exceeds the wear range, it is determined that the adhesion state of the abrasive particles is easy to fall off, and the component of the flushing direction along the tangential direction of the grinding wheel is kept in the same direction as the tangential speed of the grinding wheel; if the feed speed of the grinding wheel is always lower than the set feed speed and the wear of the grinding wheel is within the wear range, it is determined that the adhesion state of the abrasive particles is not easy to fall off and the adhesion state of the contaminants is not easy to fall off, and the flushing direction of the flusher is set so that the component of the flushing direction along the tangential direction of the grinding wheel is opposite to the tangential speed of the grinding wheel.

[0013] Optionally, the method further includes: when the adhesion state of the abrasive particles is not easy to fall off and the adhesion state of the contaminants is not easy to fall off, increasing the spray pressure and the oscillation frequency of the bottom rinser, so that the spray pressure and the oscillation frequency of the bottom rinser are equal to or slightly greater than the spray pressure and the oscillation frequency of the rinser at the main rinse position.

[0014] Optionally, the method further includes: when the flusher is set so that the component of its flushing direction along the tangential direction of the grinding wheel is opposite to the tangential speed of the grinding wheel, gradually increasing the spray pressure from an initial value to a maximum value; if the feed speed of the grinding wheel is always lower than the set feed speed and the wear of the grinding wheel is within the wear range, placing a dresser with diamond particles on the top against the bottom of the grinding wheel for grinding and dressing.

[0015] Optionally, based on the ratio of the feed speed of the grinding wheel to the set feed speed during the grinding process, adjusting the spray pressure and the swing frequency of the flusher includes: when the ratio of the feed speed of the grinding wheel to the set feed speed is lower than the set range, increasing the spray pressure and the swing frequency of the flusher; when the ratio of the feed speed of the grinding wheel to the set feed speed exceeds the set range, reducing the spray pressure and the swing frequency of the flusher; the setting range is 0.9 to 1.1.

[0016] Optionally, the method further includes: when the abrasive particles are in an adhesion state that is not easy to fall off and the contaminants are in an adhesion state that is not easy to fall off, increasing the spray pressure and the oscillation frequency of the bottom washer.

[0017] Optionally, the method further comprises: adjusting the spray pressure and the oscillation frequency of the flusher based on the ratio of the machining current of the motor driving the grinding wheel in two consecutive time periods.

[0018] Optionally, based on the ratio of the machining currents of the motor driving the grinding wheel in two consecutive time periods, adjusting the spray pressure and the swing frequency of the flusher includes: when the ratio of the machining currents in two consecutive time periods exceeds a reference range, increasing the spray pressure and the swing frequency; when the ratio of the machining currents in two consecutive time periods is lower than the reference range, reducing the spray pressure and the swing frequency; the lower limit value of the reference range is 1, and the upper limit value is the ratio of the maximum current of the motor driving the grinding wheel to the instantaneous current during grinding for 3 seconds.

[0019] Optionally, the rinser is configured with an ultrasonic generator, which is used to generate ultrasonic vibrations in the cleaning liquid.

[0020] Optionally, two groups of rinsers are provided on both sides of the center line connecting the wafer and the grinding wheel, and each group of rinsers includes the rinsers located on the inner side, outer side and bottom of the grinding wheel respectively. The method further includes: according to the rotation direction of the grinding wheel, opening a group of rinsers downstream of the wafer along the rotation direction of the grinding wheel.

[0021] According to another aspect of the present application, a device for enhancing the self-sharpening property of a grinding wheel is provided, for executing the method for enhancing the self-sharpening property of a grinding wheel as described in the aforementioned aspect, comprising:

[0022] three flushers respectively located on the inner side, outer side and bottom of the grinding wheel, each flusher having a swingable nozzle for swingably spraying a cleaning liquid toward the grinding wheel;

[0023] A controller is electrically connected to the three flushers respectively, and is used to adjust one or more parameters of the opening and closing, spray pressure, flushing direction and swing frequency of the three flushers.

[0024] Optionally, the rinser further comprises an ultrasonic generator, which causes the cleaning liquid to generate ultrasonic vibrations to assist in removing contaminants on the grinding wheel.

[0025] According to another aspect of the present application, a wafer thinning device is provided, comprising:

[0026] The carrier is used to absorb the wafer and drive the wafer to rotate;

[0027] A grinding device comprising a grinding wheel, wherein the grinding wheel is used to grind the wafer;

[0028] The device for enhancing the self-sharpening property of a grinding wheel as described in the aforementioned aspects.

[0029] According to the method, device and wafer thinning equipment for enhancing the self-sharpening property of the grinding wheel of the present application, especially for wafers made of composite materials, the bonding characteristics of the abrasive particles of the grinding wheel and the complexity and bonding characteristics of the contaminants are fully considered. According to the processing conditions of the grinding wheel and the changing trends of the processing parameters, the main adhesion positions of the contaminants and the bonding characteristics of the abrasive particles and the contaminants are determined, and then the setting and adjustment methods of the flushing parameters such as the main flushing position, flushing direction, spray pressure and swing frequency of the flusher are determined. In this way, by utilizing the flushing method, the self-sharpening property of the grinding wheel is effectively improved while the grinding wheel is flushed in a targeted manner, and effective protection is provided for the grinding teeth, thereby avoiding damage to the grinding teeth during flushing, ensuring the service life of the grinding wheel, reducing the replacement frequency of the grinding wheel, and improving the grinding and thinning quality and grinding efficiency of the grinding wheel on the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments recorded in the embodiments of the present application. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0031] Figure 1 A schematic perspective view shows a wafer thinning device provided by one embodiment of the present invention;

[0032] Figure 2 Shown Figure 1 Schematic diagram of the grinding wheel grinding the wafer;

[0033] Figure 3 Shown Figure 2 A top view of the grinding wheel and wafer, showing only the grinding teeth on the grinding wheel;

[0034] Figure 4 Shown Figure 2 Schematic diagram of the contact state between the grinding wheel and the wafer;

[0035] Figure 5 Shown Figure 2 Schematic diagram of another contact state between the grinding wheel and the wafer;

[0036] Figure 6 Shown Figure 2 Microscopic diagram of the grinding teeth of the grinding wheel;

[0037] Figure 7 A schematic diagram of a device for enhancing the self-sharpening property of a grinding wheel according to an embodiment of the present application is shown;

[0038] Figure 8 Shown Figure 7 Schematic diagram of the flushing device on the side of the grinding wheel;

[0039] Figure 9 Shown Figure 7 Schematic diagram of the flushing device at the bottom of the grinding wheel;

[0040] Figure 10 A bottom view showing the molars and side irrigators;

[0041] Figure 11 A side view of the molars and bottom irrigator is shown;

[0042] Figure 12 A bottom view showing the molars and the side irrigator at another oblique angle;

[0043] Figure 13 A side view showing the molars and the bottom irrigator at another oblique angle;

[0044] Figure 14 Shown Figure 2 A schematic diagram of the trimmer is shown in FIG;

[0045] Figure 15 A flow chart of a method for enhancing the self-sharpening performance of a grinding wheel according to one embodiment of the present application is shown.

[0046] Figure numerals: workbench 31; supporting platform 32; grinding device 2; grinding wheel 100; rough grinding part 21; fine grinding part 22; cleaning unit 5; simple robot 6; base 110; grinding teeth 120; abrasive particles 121; air holes 122; adhesive 123; contaminant 124; rinser 200; nozzle 210; cleaning liquid 211; ultrasonic generator 220; dresser 300; dressing head 310; diamond particles 311; dressing seat 320; wafer W; grinding line L. DETAILED DESCRIPTION

[0047] In order to enable those skilled in the art to better understand the technical solutions in the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the embodiments of the present application, all other embodiments obtained by ordinary technicians in this field should fall within the scope of protection of the embodiments of the present application.

[0048] In the description of this application, it should be understood that the terms "longitudinal", "transverse", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0049] In addition, in the description of this application, unless otherwise specified and limited, it should be noted that the terms "install", "connect" and "connect" should be understood in a broad sense. For example, it can be a mechanical connection or an electrical connection, or it can be the internal connection between two components. It can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to the specific circumstances.

[0050] Figure 1 A schematic perspective view shows a wafer thinning device provided by an embodiment of the present application, comprising:

[0051] The workbench 31 supports multiple carriers 32, which adsorb and hold the wafer W and can drive the wafer W to rotate. The workbench 31 can rotate about its vertical center axis so that the workbench 31 drives the multiple carriers 32 to rotate and move as a whole, thereby enabling the carriers 32 to switch positions between different workstations. Each carrier 32 can also rotate independently.

[0052] The grinding device 2 includes a grinding wheel 100 , which is brought into contact with the wafer W to perform a grinding and thinning process on the wafer W. The grinding wheel 100 is connected to a spindle assembly, which has a tilting mechanism to adjust the tilt angle of the spindle in the front, back, left, and right directions.

[0053] like Figure 1As shown, as an embodiment, three independently rotatable carriers 32 are evenly distributed on the workbench 31, each having a first suction cup, a second suction cup, and a third suction cup for adsorbing the wafer W. The three suction cups can be porous ceramic suction cups with exactly the same structure to achieve vacuum adsorption of the wafer W, and the center of the three carriers 32 and the center of the workbench 31 form a 120° angle with each other. The three carriers 32 correspond to three workstations, namely the rough grinding station, the fine grinding station, and the loading and unloading station. The two stations opposite the grinding wheel 100 are used for rough grinding and fine grinding, respectively, and the remaining station is used for loading, unloading, and cleaning of the wafer W. The rotation of the workbench 31 can drive the three carriers 32 to switch between the three stations, so that the carriers 32 can carry the wafer W and circulate in the order of loading and unloading station-rough grinding station-fine grinding station-loading and unloading station. This embodiment realizes fully automatic loading and unloading and continuous grinding and cleaning of the wafer W through repeated cycles. The use of the rotary worktable 31 for grinding the wafer W has the advantages of high material removal rate, little damage to the surface of the wafer W, and easy automation.

[0054] The grinding device 2 mainly consists of a rough grinding section 21 and a fine grinding section 22. The grinding wheel 100 in the rough grinding section 21 is used for rough grinding of the wafer W, while the grinding wheel 100 in the fine grinding section 22 is used for fine grinding of the wafer W. During the grinding process, the grinding wheel 100 is pressed against the surface of the wafer W and rotated to grind off a certain thickness.

[0055] Also like Figure 1 As shown, the wafer thinning apparatus further includes a cleaning unit 5 for cleaning the suction cup and wafer W. The wafer thinning apparatus further includes a simple robot 6 for placing the wafer W on the carrier 32 for grinding and, after grinding and cleaning, removing the wafer W from the carrier 32 for subsequent transport. In one embodiment, the simple robot 6 is internally provided with a vacuum line to achieve vacuum suction of the wafer W.

[0056] Figure 2 Shown Figure 1 In the schematic diagram of the grinding wheel 100 grinding the wafer W, it can be seen that the grinding wheel 100 includes a base 110 and grinding teeth 120 arranged on the base 110. The grinding wheel 100 is pressed on the wafer W to rotate and feeds axially at a certain feed speed to grind the wafer W. Figure 3 Shown Figure 2 1 is a top view of the grinding wheel 100, in which only the grinding teeth 120 on the grinding wheel 100 are shown, and the grinding teeth 120 are evenly spaced along the circumference. Figure 4 、 Figure 5 Shown Figure 2 Schematic diagram of the contact state between the grinding wheel 100 and the wafer W. During the rotational grinding process, the grinding wheel 100 cuts into the wafer W to produce an arc-shaped contact area, such as Figure 4The solid black arc in the figure can be called the grinding line L. The grinding wheel 100 and the wafer W can adopt a semi-contact grinding method, that is, the grinding line L is only a portion of the arc where the grinding wheel 100 and the wafer W overlap, which is approximately half. This can reduce the grinding force and grinding heat during the grinding process of the wafer W, and improve the surface quality of the wafer W.

[0057] Figure 6 A microscopic diagram of the grinding teeth 120 of the grinding wheel 100 is shown. The grinding teeth 120 are formed on the base 110 by mixing abrasive grains 121 with a binder 123, a pore-forming agent, and other materials through sintering, electroplating, or resin curing. The black dots in the figure represent abrasive grains 121, the white ovals represent the formed pores 122, the gray irregular shapes surrounding the abrasive grains 121 represent the binder 123, and the white clouds are contaminants 124. The binder 123 forms lateral and vertical bonds between the abrasive grains 121, with lateral referring to parallel to the lower surface of the base 110 and vertical referring to perpendicular to the lower surface of the base 110.

[0058] With the development and progress of advanced packaging technology, the structure of the wafer W processed during the thinning stage has become more complex, gradually evolving from processing a single material to processing composite materials, including PI glue (polyimide), DAF (die attach film), EMC (epoxy molding compound) and other materials used for wafer packaging or bonding. When the grinding wheel 100 processes composite materials, due to the coexistence of heterogeneous materials such as epoxy resin materials, metal materials, silicon, and glue, the grinding debris (or contaminants 124) will adhere to the side walls or bottom of the grinding teeth 120 as the grinding wheel 100 rotates. Figure 6 The figure shows that contaminants 124 may enter the pores 122 within the grinding teeth 120. The presence of contaminants 124 can cause the grinding wheel 100 to become dull, resulting in insufficient self-sharpening performance of the grinding wheel 100. This affects the amount and efficiency of the grinding wheel 100 on the wafer W, and ultimately affects the surface finish quality of the wafer. "Self-sharpening" refers to the ability of the grinding wheel 100 to expose sharp abrasive grains 121 to maintain cutting performance.

[0059] In the prior art, the self-sharpening properties of the grinding wheel 100 are typically maintained by replacing the grinding wheel 100 or adjusting processing parameters. However, replacing the grinding wheel 100 is costly and prone to introducing operational errors, making it difficult to meet the requirements of high-precision, high-efficiency machining. Conventional cleaning mechanisms directly flush contaminants 124 from the surface of the molars 120 at a fixed position, without considering the adhesive properties of the abrasive particles 121. This often washes away the abrasive particles 121, damaging the molars 120 themselves and causing them to wear out too quickly, shortening the lifespan of the grinding wheel 100 and leading to frequent replacement of the grinding wheel 100, reducing overall machining efficiency, and increasing machining costs.

[0060] To this end, the present application provides a grinding wheel self-sharpening enhancement device and a grinding wheel self-sharpening enhancement method using the same, and the grinding wheel self-sharpening enhancement device can be used in the aforementioned wafer thinning equipment. Figure 7 A schematic diagram of a grinding wheel self-sharpening enhancement device according to an embodiment of the present application is shown, which can be arranged at a position where the grinding wheel 100 is outside the wafer W, preferably, downstream of the wafer W along the rotation direction of the grinding wheel 100, for example Figure 3 At the position indicated by the dotted circle A. Figure 3 The dotted line connecting the center of the wafer W and the grinding wheel 100 is used as the boundary, and the portion of the grinding wheel 100 outside the wafer W is divided into two sections, one section moving toward the wafer W ( Figure 3 The portion of the grinding wheel 100 (slanting upward from the midpoint line) is considered to be located upstream of the wafer W, and the portion moving away from the wafer W is considered to be located downstream of the wafer W. In an optional embodiment, the grinding wheel self-sharpening enhancement device is slidably disposed on an arcuate track, which is disposed below the grinding wheel 100 and matches the radius of the grinding wheel 100. The grinding wheel self-sharpening enhancement device moves along the arcuate track to align with different positions of the grinding wheel 100. For example, when the grinding wheel 100 changes its rotation direction, the grinding wheel self-sharpening enhancement device can be changed to be disposed downstream of the wafer W along the rotation direction of the grinding wheel 100, or the position of the grinding wheel self-sharpening enhancement device can be appropriately adjusted based on the actual cleaning and self-sharpening enhancement needs of the grinding wheel 100. In another optional embodiment, a grinding wheel self-sharpening enhancement device can be provided on both sides of the dotted line, so that the corresponding grinding wheel self-sharpening enhancement device can be opened when the grinding wheel 100 changes its rotation direction, that is, the grinding wheel self-sharpening enhancement device downstream of the wafer W along the rotation direction of the grinding wheel 100 is opened, so as to timely rinse, cool down and restore the self-sharpening properties of the grinding teeth 120 after grinding.

[0061] The grinding wheel self-sharpening enhancement device mainly includes three flushers 200 located on the inner side, outer side and bottom of the grinding wheel 100. Figure 7Only one molar 120 is schematically shown, with its left side being the inner side of the grinding wheel, its right side being the outer side of the grinding wheel, and its lower part being the bottom of the grinding wheel. The three rinsers 200 can be arranged at the same circumferential position of the grinding wheel 100, or can be arranged at different circumferential positions of the grinding wheel 100 with slight offset. The rinser 200 has a swingable nozzle 210, which is used to spray a cleaning liquid 211 onto the grinding wheel 100. By swinging the nozzle 210 within the swinging range, the cleaning liquid 211 sprayed by the rinser 200 can be swung back and forth within the swinging range to rinse the grinding wheel 100, thereby enhancing the vibration of the cleaning liquid 211 on the grinding wheel 100, making it easier for the contaminants 124 to loosen and fall off, thereby improving the cleaning effect. The nozzle 210 can be configured to have a tapered shape that tapers toward the molars 120 to increase the pressure of the spray liquid. Furthermore, a pressurizer can be provided within the nozzle 210, or between the nozzle 210 and the source of the cleaning liquid 211, so that the nozzle 210 sprays pressurized cleaning liquid 211, thereby loosening the contaminants 124 on the grinding wheel 100 and enhancing the cleaning effect. More preferably, the rinser 200 can also be provided with an ultrasonic generator 220 that generates ultrasonic vibrations in the cleaning liquid 211 to further enhance the flushing force on the contaminants 124, thereby facilitating the removal of the contaminants 124 from the grinding wheel 100.

[0062] The grinding wheel self-sharpening enhancement device also includes a controller (not shown), which is electrically connected to the three flushers 200 respectively, and is used to adjust parameters such as the opening and closing, spray pressure, flushing direction, swing frequency, ultrasonic vibration frequency, etc. of the three flushers 200, so as to remove contaminants 124 on the grinding wheel 100 and enhance the self-sharpening performance of the grinding wheel 100 while protecting the molars 120 from being damaged by flushing.

[0063] In an alternative embodiment, more rinsers 200 may be provided at different locations on the grinding wheel 100 to enhance the cleaning effect. Alternatively, to save space and other factors, the bottom rinser 200, or the inner or outer rinsers 200 may be omitted depending on the actual amount of contaminants 124.

[0064] Figure 8 A schematic diagram of flushing of the side (inside or outside) of the grinding wheel 100 by the flusher 200 is shown; Figure 9 The figure shows a schematic diagram of the flushing device 200 at the bottom of the grinding wheel 100. During the formation of the grinding teeth 120, due to the influence of the consolidation process and the properties of the adhesive 123 itself, the abrasive particles 121 are usually more likely to crosslink and bond in the horizontal direction, making the horizontal bonding between the abrasive particles 121 stronger and the vertical bonding weaker. In addition to flushing the contaminants 124, for the grinding wheel 100, Figure 8 The side flusher 200 is generally used to overcome the lateral adhesion and to loosen the abrasive particles 121 laterally. Figure 9The bottom flusher 200 is usually mainly used to overcome vertical adhesion and make the abrasive grains 121 loose vertically. Due to the difference between the lateral bonding force and the vertical bonding force, it is necessary to adaptively adjust the parameters such as the spray pressure, oscillation frequency, and ultrasonic frequency of the flushers 200 on both sides and the bottom flusher 200 to reduce the abrasive grains 121 from being flushed off and excessively damaging the grinding teeth 120. In addition, during the grinding process of the grinding wheel 100, the grinding wheel 100 is in a rotating state. The rotation of the grinding wheel 100 will drive the surrounding air to move together, forming an air layer with speed and pressure. When the pressurized cleaning liquid 211 sprayed by the inner or outer flusher 200 flushes the side of the grinding wheel 100, the air layer will generate a certain resistance to the cleaning liquid 211, so that the impact force of the cleaning liquid 211 on the grinding wheel 100 is buffered and dispersed. Therefore, as the speed of the grinding wheel 100 itself increases, the speed and pressure of the air layer increase, which increases the obstruction to the cleaning liquid 211. Therefore, the spray pressure and oscillation frequency of the rinser 200 can be appropriately increased to destroy the air layer and achieve effective impact on the grinding wheel 100. The rotation of the grinding wheel 100 causes the formation of the air layer at its bottom to be unclear, so that when the rinser 200 at the bottom rinses perpendicularly to the bottom surface of the grinding wheel 100, the buffering and dispersion effect of the air layer on the impact force of the cleaning liquid 211 is relatively small. Therefore, under the same parameters such as the speed and pressure of the cleaning liquid 211, the bottom of the grinding wheel 100 is more susceptible to the impact force of the cleaning liquid 211. Therefore, the spray pressure or oscillation frequency of the rinser 200 at the bottom can be appropriately smaller than the spray pressure or oscillation frequency of the rinser 200 at the side, so that the impact force on the bottom of the grinding wheel 100 is consistent with that on the side, avoiding the excessive impact force of the cleaning liquid 211 at the bottom, which causes the abrasive particles 121 to fall off (such as Figure 9 The figure shows the detached abrasive particles 121) and the worn grinding teeth 120. In addition, when the abrasive particles 121 are not easily detached and the contaminants 124 are not easily detached, the parameters such as the spray pressure or oscillation frequency of the bottom rinser 200 can be appropriately increased to be consistent with or even greater than the spray pressure or oscillation frequency of the rinser 200 with greater impact force in the side (the rinser 200 at the main rinsing position hereinafter) to remove stubborn contaminants 124, achieve better cleaning effects, and protect the grinding teeth 120 while improving the self-sharpening performance of the grinding wheel 100.

[0065] In an alternative or preferred embodiment, as Figure 2 and Figure 14As shown, the device for enhancing the self-sharpening property of the grinding wheel may further include a dresser 300 disposed below the grinding wheel 100. The dresser 300 mainly includes a dresser seat 320 and a dresser head 310. The top of the dresser head 310 is configured with diamond particles 311 for grinding and dressing the surface of the molar 120, removing contaminants 124 and improving the self-sharpening property of the grinding wheel 100. The dresser seat 320 may be disposed on the workbench 31 and configured to be movable up and down so that the dresser head 310 can move downward away from the molar 120 and upward against the molar 120. When the cleaning fluid 211 of the irrigator 200 is sufficient to remove the contaminants 124 and improve the self-sharpening performance of the grinding wheel 100, the dressing seat 320 is in a low position to keep the dressing head 310 away from the grinding teeth 120, thereby preventing the dressing head 310 from excessively wearing the grinding teeth 120. When the contaminants 124 are highly adherent and the irrigator 200 is able to remove them, the dressing seat 320 moves upward to allow the dressing head 310 to abut against the grinding teeth 120, thereby removing stubborn contaminants 124 with the diamond particles 311. The dresser 300 can be configured to rotate about a vertical axis to perform rotary grinding on the grinding wheel 100.

[0066] Figure 15 A flow chart of a method for enhancing the self-sharpening property of a grinding wheel according to an embodiment of the present application is shown, which is performed using the aforementioned self-sharpening property enhancement of the grinding wheel. The method mainly includes:

[0067] Step S1: Determine the main flushing position: Based on the position of the grinding line L of the grinding wheel 100 grinding the wafer W and the rotation direction of the wafer W, determine whether the grinding wheel 100 is an external blade processing. If so, the main flushing position is the outside of the grinding wheel 100, otherwise the main flushing position is the inside of the grinding wheel 100. Figure 4 or Figure 5 The grinding line L generally extends from the center of the wafer W to the edge of the wafer W, so as to grind the entire surface of the wafer W during the rotation of the wafer W and the grinding wheel 100 . Figure 4 and Figure 5 The arrows in FIG. 1 respectively show the rotation directions of the wafer W and the grinding wheel 100. In step S1, judging whether the grinding wheel 100 is for external blade processing based on the position of the grinding line L of the grinding wheel 100 and the rotation direction of the wafer W includes: Figure 4 The rotation direction of the portion of the wafer W outside the grinding wheel 100 is toward the grinding line L, and the rotation direction of the portion of the wafer W inside the grinding wheel 100 is away from the grinding line L. At this time, the radial outer side of the grinding teeth 120 of the grinding wheel 100 is mainly in contact with the wafer W for grinding, which can be determined to be external edge processing. During grinding, more debris accumulates on the outer side of the grinding wheel 100, and more contaminants 124 adhere to it, and the grinding teeth 120 are more seriously passivated; Figure 5The portion of wafer W outside the grinding wheel 100 rotates away from the grinding line L, while the portion of wafer W inside the grinding wheel 100 rotates toward the grinding line L. At this time, the radially inner side of the grinding teeth 120 of the grinding wheel 100 primarily contacts and grinds the wafer W, indicating inner edge processing. During grinding, the inner side of the grinding wheel 100 accumulates a large amount of debris and contaminants 124, resulting in severe blunting of the grinding teeth 120. After determining the primary rinsing position based on inner or outer edge processing, step S2 can be performed.

[0068] Step S2: The spray pressure, oscillation frequency, ultrasonic vibration frequency, and other parameters of the rinser 200 at the primary rinsing position are set to be greater than those of the rinser 200 on the opposite side. For example, if the primary rinsing position is outside the grinding wheel 100, the spray pressure of the rinser 200 on the outside of the grinding wheel 100 is set to be greater than the spray pressure of the rinser 200 on the inside of the grinding wheel 100. In addition, the spray volume, oscillation frequency, and other parameters of the rinser 200 on the outside of the grinding wheel 100 can be further set to be greater than the corresponding parameters of the rinser 200 on the inside of the grinding wheel 100. To save system energy consumption, the rinser 200 on the inside of the grinding wheel 100 can also be turned off. The flusher 200 at the bottom of the grinding wheel 100 can be set so that the flushing direction is inclined toward the main flushing position, and the parameters such as the spray pressure and the swing frequency can be less than or equal to the parameters such as the spray pressure and the swing frequency of the flusher 200 at the main flushing position, or when the contaminants 124 are more difficult to flush away, they can be roughly equal to or appropriately higher than the corresponding flushing parameters of the flusher 200 at the main flushing position.

[0069] The method further includes step S3: determining the flushing direction of the rinser 200 based on the adhesion state of the abrasive particles 121 forming the grinding wheel 100 and the adhesion state of the contaminants 124 on the grinding wheel 100. This step primarily determines whether the flushing direction of the rinser 200 on the inside, outside, or bottom of the grinding wheel 100, along the tangential direction of the grinding wheel 100, is in the same direction as or in the opposite direction of the tangential velocity of the grinding wheel 100. In other words, whether the flushing direction of the rinser 200 is inclined with or against the rotational direction of the grinding wheel 100. The difference between the (actual) feed speed of the grinding wheel 100 and the set feed speed, combined with the wear of the grinding wheel 100, can be used to determine whether the adhesion state of the abrasive particles 121 and contaminants 124 is easy to detach or difficult to detach. The wear of the grinding wheel 100 refers to the amount of material lost from the teeth 120 due to friction between the teeth 120 and the wafer W when the grinding wheel 100 is grinding the wafer W. The wear can be calculated by monitoring the height difference between the grinding wheel 100 or the spindle connected to the grinding wheel 100 when the grinding wheel 100 is in contact with the wafer W before and after a grinding process. If the abrasive particles 121 in the teeth 120 have low adhesion and are easily detached, the abrasive particles 121 may detach during the rinsing process of the grinding wheel 100 by the rinser 200, causing the wear of the grinding wheel 100 to exceed the normal wear range. If the abrasive particles 121 have high adhesion and are not easily detached, the rinsing process does not cause the abrasive particles 121 to detach, and the wear of the grinding wheel 100 will be within the normal wear range.

[0070] In a specific embodiment, Figure 10A schematic diagram (i.e., a bottom view) of the molar 120 and the side (inside or outside) of the grinding wheel 100 is shown. For example, the initial direction of the rinser 200 at the main rinsing position can be set so that its component along the tangential direction of the grinding wheel 100 is in the same direction as the tangential speed of the grinding wheel 100 represented by the hollow arrow, and the spray pressure is gradually increased from the initial value to the maximum value. If the feed speed of the grinding wheel 100 gradually increases from lower than the set feed speed to the same as the set feed speed, it means that at the beginning, the initial value of the spray pressure is too low, and the contaminant 124 cannot be fully rinsed. The adhesion of the contaminant 124 on the molar 120 hinders the actual feed of the grinding wheel 100, resulting in a feed speed lower than the set feed speed. Then, as the spray pressure increases, the feed speed gradually increases to the same as the set feed speed, indicating that the contaminants 124 can be fully washed away. If the wear of the grinding wheel 100 exceeds the wear range during this process, it means that the shedding of the contaminants 124 is accompanied by the shedding of the abrasive particles 121 themselves. The adhesion state of the abrasive particles 121 can be determined as easy to fall off. At this time, the flushing direction along the tangential direction of the grinding wheel 100 can be kept in the same direction as the tangential speed of the grinding wheel 100. At the same time, the spray pressure can be appropriately reduced during the grinding process to appropriately reduce the impact force of the cleaning liquid 211 on the molars 120, reduce the shedding of the abrasive particles 121, and thus slow down the wear of the grinding wheel 100. Figure 10 As shown by the dotted line, while keeping the flushing direction along the tangential direction of the grinding wheel 100 in the same direction as the tangential speed of the grinding wheel 100, the nozzle 210 of the flusher 200 can also have a swing amplitude of 10 to 30 degrees, that is, swing within an angle range of 10 to 30 degrees, to promote the shedding of the contaminants 124. In the case where the adhesion state of the abrasive particles 121 is determined to be easy to fall off, the same flushing direction setting can also be adopted for the bottom flusher 200, such as Figure 11 A schematic diagram (ie, a side view) of the grinding teeth 120 and the bottom irrigator 200 viewed from the side of the grinding wheel 100 is shown.

[0071] In another case, for example, the initial direction of the rinser 200 at the main rinsing position is set so that its component along the tangential direction of the grinding wheel 100 is in the same direction as the tangential speed of the grinding wheel 100, and the spray pressure is gradually increased from the initial value to the maximum value. If the feed speed of the grinding wheel 100 is always lower than the set feed speed and the wear amount of the grinding wheel 100 is within the wear amount range, it means that the contaminants 124 are not fully removed during this process, and the feed of the grinding wheel 100 is always hindered, and the abrasive particles 121 of the grinding wheel 100 are not detached (otherwise, the contaminants 124 will be detached together and the contaminants will be removed). Therefore, it can be determined that the adhesion state of the abrasive particles 121 is not easy to detach and the adhesion state of the contaminants 124 is not easy to detach. At this time, Figure 12, the flushing direction of the flusher 200 can be changed so that the flushing direction is tangential to the grinding wheel 100 and opposite to the tangential speed of the grinding wheel 100, so as to enhance the flushing force by the impact of the cleaning liquid 211 and the movement of the grinding wheel 100. Figure 12 As shown by the dotted line, while maintaining the flushing direction along the tangential direction of the grinding wheel 100 in the opposite direction to the tangential speed of the grinding wheel 100, the nozzle 210 of the flusher 200 can also have a swing amplitude of 10 to 30 degrees, that is, swing within an angle range of 10 to 30 degrees, so as to promote the shedding of the contaminants 124. In the case where the abrasive particles 121 are not easily detached and the contaminants 124 are not easily detached, the same flushing direction setting can also be adopted for the bottom flusher 200, such as Figure 13 A schematic diagram of the grinding teeth 120 and the irrigator 200 at the bottom is shown as viewed from the side of the grinding wheel 100 .

[0072] In an alternative embodiment, when the flusher 200 is set so that the flushing direction is along the tangential component of the grinding wheel 100 and is opposite to the tangential speed of the grinding wheel 100, the spray pressure is gradually increased from the initial value to the maximum value. If the feed speed of the grinding wheel 100 is always lower than the set feed speed and the wear of the grinding wheel 100 is within the wear range, it means that the contaminant 124 is too stubborn and the flusher 200 can no longer remove the contaminant 124 and improve the self-sharpening property of the grinding wheel 100. At this time, the dresser 300 with diamond particles 311 on the top can be pressed against the bottom of the grinding wheel 100 to grind and dress the molars 120.

[0073] In an alternative embodiment, the operation of gradually increasing the spray pressure from an initial value to a maximum value may be replaced by gradually increasing the oscillation frequency from an initial value to a maximum value to determine the adhesion state of the abrasive particles 121 or the contaminants 124. Furthermore, the aforementioned preliminary selection and determination of the flushing direction is performed using the flusher 200 at the primary flushing position; in alternative embodiments, other flushers 200 may also be used.

[0074] Furthermore, the method may also include step S4: adjusting the spray pressure and swing frequency of the flusher 200 based on the ratio of the feed speed of the grinding wheel 100 to the set feed speed during the grinding process. Specifically, when the ratio of the feed speed of the grinding wheel 100 to the set feed speed is lower than the set range, it means that the attachment of the contaminants 124 has hindered the feeding of the grinding wheel 100, and it is necessary to increase the spray pressure and / or swing frequency of the flusher 200 to enhance the flushing of the contaminants 124. Conversely, when it exceeds the set range, the spray pressure and / or swing frequency of the flusher 200 are reduced. The setting range can be 0.9 to 1.1. In addition, a speed alarm value can be set, for example, a value between 1.1 and 1.3. When the ratio of the feed speed to the set feed speed exceeds the speed alarm value, an alarm signal is issued to indicate that the flushing pressure and / or swing frequency setting is abnormal.

[0075] In an embodiment additional to or in lieu of step S4, the method may further include adjusting the spray pressure and oscillation frequency of the flusher 200 based on the ratio of the machining current of the motor driving the grinding wheel 100 in the latter time period to the former time period in two consecutive time periods. Specifically, when the ratio of the machining current in the two consecutive time periods exceeds a reference range, it indicates that the attachment of contaminants 124 is hindering the feeding of the grinding wheel 100, and the spray pressure and / or oscillation frequency need to be increased. When the ratio of the machining current in the two consecutive time periods is below the reference range, it indicates that the flushing has caused significant wear and tear on the grinding wheel 100, and the spray pressure and / or oscillation frequency need to be reduced. The lower limit of the reference range can be set to 1. Furthermore, since the grinding wheel 100 reaches a normal machining state approximately 3 seconds after the start of grinding, a reference point can be collected. The upper limit can be set to the ratio of the maximum current of the motor driving the grinding wheel 100 to the instantaneous current at 3 seconds of grinding. In addition, a current alarm value can be set, for example, the upper limit value of the aforementioned reference range can be taken. When the ratio of the machining current in two consecutive time periods exceeds the current alarm value, an alarm signal is issued to indicate that the spray pressure and swing frequency settings are abnormal.

[0076] In addition, in an optional embodiment, considering the existence of the air layer around the aforementioned grinding wheel 100, the method may further include increasing the spray pressure and oscillation frequency of the inner, outer and bottom flushers 200 as the rotation speed of the grinding wheel 100 increases, and considering the difference in the air layers on the side and bottom, the increase in the spray pressure and oscillation frequency of the inner and outer flushers 200 may be greater than the increase in the spray pressure and oscillation frequency of the bottom flusher 200, so as to improve the self-sharpening property of the grinding wheel through flushing while reducing the shedding of abrasive particles caused by flushing, thereby ensuring the life of the grinding wheel.

[0077] Furthermore, since increasing parameters such as the spray pressure, oscillation frequency, spray volume, spray velocity, and ultrasonic vibration frequency all increase the impact force of the cleaning fluid 211 on the molars 120, the aforementioned methods for adjusting the spray pressure or oscillation frequency also apply to adjusting parameters such as the spray volume, spray velocity, and ultrasonic vibration frequency. Reducing the oscillation amplitude of the nozzle 210 causes the cleaning fluid 211 to oscillate within a reduced range, resulting in a more concentrated effect of the cleaning fluid 211 on the molars 120. Therefore, the oscillation amplitude adjustment method is the opposite of the aforementioned oscillation amplitude adjustment method: when the impact force is increased, the oscillation amplitude is reduced, and when the impact force is decreased, the oscillation amplitude is increased. Furthermore, the aforementioned methods for adjusting the irrigator 200's irrigation parameters (increasing or decreasing) are consistent for all irrigators 200; only the adjustment amplitude may differ, and therefore, no specific reference is made to the inner, outer, or bottom irrigator 200.

[0078] It should be understood that the sequence of steps in the above-mentioned method for enhancing the self-sharpening property of the grinding wheel is merely exemplary. According to actual control or operation requirements or equipment monitoring display conditions, the execution order of each step can be appropriately adjusted, or one or more of the above-mentioned steps can be performed alternately or repeatedly.

[0079] The present application also provides a computer storage medium having a computer program stored thereon, which implements the aforementioned method for enhancing the self-sharpening property of a grinding wheel when the program is executed by a processor.

[0080] According to the technical solution of the present application, especially for wafers made of composite materials, the bonding characteristics of the abrasive grains 121 of the grinding wheel 100 and the complexity and bonding characteristics of the contaminants 124 are fully considered. In order to improve the self-sharpening performance of the grinding wheel 100 and avoid excessive wear of the grinding wheel 100, the main flushing position of the rinser 200 is determined by studying the correlation between the main processing positions of the grinding wheel 100 and the changing trends of processing parameters such as processing current and feed speed, the main adhesion positions of the contaminants 124, and the bonding characteristics of the abrasive grains 121 and the contaminants 124. The setting and adjustment methods of parameters such as position, flushing direction, spray pressure and swing frequency, as well as the coordination relationship between the side flusher 200 and the bottom flusher 200, thereby utilizing the flushing method to perform targeted flushing of the grinding wheel 100 at different positions and angles, effectively improve the self-sharpening property of the grinding wheel 100, provide effective protection for the molars 120, avoid damage to the molars 120 during flushing, ensure the service life of the grinding wheel 100, reduce the replacement frequency of the grinding wheel 100, and improve the grinding thinning effect and grinding efficiency of the grinding wheel 100.

[0081] The above implementation methods are only used to illustrate the embodiments of the present application, and are not intended to limit the embodiments of the present application. Ordinary technicians in the relevant technical field can make various changes and modifications without departing from the spirit and scope of the embodiments of the present application. Therefore, all equivalent technical solutions also fall within the scope of the embodiments of the present application, and the scope of patent protection of the embodiments of the present application should be defined by the claims.

Claims

1. A method for enhancing the self-sharpening property of a grinding wheel, wherein the grinding wheel is used for grinding wafers in a wafer thinning device, characterized in that: The grinding line of the grinding wheel for grinding the wafer extends from the center of the wafer to the edge of the wafer, and the inner side, outer side and bottom of the grinding wheel are respectively provided with a rinser for spraying a cleaning liquid onto the grinding wheel. The method includes: Determine the primary flushing position: Based on the position of the grinding line and the rotation direction of the wafer, determine whether the grinding wheel is for external blade processing. If so, the primary flushing position is the outside of the grinding wheel; otherwise, the primary flushing position is the inside of the grinding wheel. When the rotation direction of the portion of the wafer outside the grinding wheel is toward the grinding line, it is determined to be external blade processing; when the rotation direction of the portion of the wafer outside the grinding wheel is away from the grinding line, it is determined to be internal blade processing; Setting the spray pressure and oscillation frequency of the flusher at the main flushing position to be greater than the spray pressure and oscillation frequency of the flusher on the opposite side; The flushing direction of the flusher is determined based on the adhesion state of the abrasive particles forming the grinding wheel and the adhesion state of the contaminants on the grinding wheel, including: setting the initial direction of the flusher so that its component along the tangential direction of the grinding wheel is in the same direction as the tangential speed of the grinding wheel, gradually increasing the spray pressure from the initial value to the maximum value, if the feed speed of the grinding wheel gradually increases from lower than the set feed speed to the same as the set feed speed and the wear amount of the grinding wheel exceeds the wear amount range, then the adhesion state of the abrasive particles is determined to be easy to fall off, and the component of the flushing direction along the tangential direction of the grinding wheel is kept in the same direction as the tangential speed of the grinding wheel; if the feed speed of the grinding wheel is always lower than the set feed speed and the wear amount is within the wear amount range, then the adhesion state of the abrasive particles and the adhesion state of the contaminants are both determined to be not easy to fall off, and the component of the flushing direction along the tangential direction of the grinding wheel is set to be opposite to the tangential speed of the grinding wheel; Based on the ratio of the feed speed of the grinding wheel to the set feed speed during the grinding process, the spray pressure and the oscillation frequency of the rinser are adjusted.

2. The method for enhancing the self-sharpening property of a grinding wheel according to claim 1, wherein: The method also includes: as the rotation rate of the grinding wheel increases, increasing the spray pressure and oscillation frequency of the inner, outer and bottom rinsers to reduce the dispersion effect of the air layer around the grinding wheel caused by the rotation of the grinding wheel on the cleaning liquid, and the increase in the spray pressure and oscillation frequency of the inner and outer rinsers is greater than the increase in the spray pressure and oscillation frequency of the bottom rinser.

3. The method for enhancing the self-sharpening property of a grinding wheel according to claim 1, wherein: The method further includes: when the abrasive particles are in an adhered state that is not easy to fall off and the contaminants are in an adhered state that is not easy to fall off, increasing the spray pressure and the oscillation frequency of the bottom washer.

4. The method for enhancing the self-sharpening property of a grinding wheel according to claim 1, wherein: The method further includes: when the flusher is set so that the component of its flushing direction along the tangential direction of the grinding wheel is opposite to the tangential speed of the grinding wheel, gradually increasing the spray pressure from an initial value to a maximum value; if the feed speed of the grinding wheel is always lower than the set feed speed and the wear of the grinding wheel is within the wear range, placing a dresser with diamond particles on the top against the bottom of the grinding wheel for grinding and dressing.

5. The method for enhancing the self-sharpening property of a grinding wheel according to claim 1, wherein: “Adjusting the liquid spray pressure and the swing frequency of the washer based on the ratio of the feed speed of the grinding wheel to the set feed speed during the grinding process” includes: when the ratio of the feed speed of the grinding wheel to the set feed speed is lower than a set range, increasing the liquid spray pressure and the swing frequency of the washer; when the ratio of the feed speed of the grinding wheel to the set feed speed exceeds the set range, reducing the liquid spray pressure and the swing frequency of the washer; The setting range is 0.9 to 1.

1.

6. The method for enhancing the self-sharpening property of a grinding wheel according to claim 1, wherein: The method further includes adjusting the spray pressure and the oscillation frequency of the flusher based on a ratio of machining currents of a motor driving the grinding wheel in two consecutive time periods.

7. The method for enhancing the self-sharpening property of a grinding wheel according to claim 6, wherein: “Adjusting the liquid spray pressure and the swing frequency of the flusher based on the ratio of the machining currents of the motor driving the grinding wheel in two consecutive time periods” includes: increasing the liquid spray pressure and the swing frequency when the ratio of the machining currents in two consecutive time periods exceeds a reference range; and decreasing the liquid spray pressure and the swing frequency when the ratio of the machining currents in two consecutive time periods is below the reference range; The lower limit value of the reference range is 1, and the upper limit value is the ratio of the maximum current of the motor driving the grinding wheel to the instantaneous current during grinding for 3 seconds.

8. The method for enhancing the self-sharpening property of a grinding wheel according to claim 1, wherein: The rinser is configured with an ultrasonic generator, which generates ultrasonic vibrations in the cleaning liquid.

9. The method for enhancing the self-sharpening property of a grinding wheel according to any one of claims 1 to 8, wherein: Two groups of rinsers are provided on both sides of the center line connecting the wafer and the grinding wheel, and each group of rinsers includes the rinsers located on the inner side, outer side and bottom of the grinding wheel. The method also includes: according to the rotation direction of the grinding wheel, opening a group of rinsers located downstream of the wafer along the rotation direction of the grinding wheel.

10. A device for enhancing the self-sharpening property of a grinding wheel, used for executing the method for enhancing the self-sharpening property of a grinding wheel according to any one of claims 1 to 8, characterized in that: include: three flushers respectively located on the inner side, outer side and bottom of the grinding wheel, each flusher having a swingable nozzle for swingably spraying a cleaning liquid toward the grinding wheel; A controller is electrically connected to the three flushers respectively, and is used to adjust one or more parameters of the opening and closing, spray pressure, flushing direction and swing frequency of the three flushers.

11. The device for enhancing the self-sharpening property of a grinding wheel according to claim 10, wherein: The rinser further includes an ultrasonic generator, which generates ultrasonic vibrations in the cleaning fluid to assist in removing contaminants on the grinding wheel.

12. A wafer thinning device, characterized in that: include: The carrier is used to absorb the wafer and drive the wafer to rotate; A grinding device comprising a grinding wheel, wherein the grinding wheel is used to grind the wafer; The device for enhancing the self-sharpening property of a grinding wheel as claimed in claim 10 or 11.

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