Processing method of diamond powder

Abstract

The processing method of the diamond powder comprises the following steps: cleaning the diamond powder; a first metal layer is formed on the surface of the diamond powder through sputtering; a second metal layer is formed on the first metal layer in a sputtering mode, the first metal layer is made of chromium, and the second metal layer is made of tin. According to the method, damaged diamond powder can be repaired, burrs on the surface of the diamond powder are passivated, scratches are repaired, and therefore the use efficiency of the diamond powder is improved, the service life of the diamond powder is prolonged, and the machining cost is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing, and particularly to a processing method for diamond powder. Background Art

[0002] Currently, semiconductor materials are very hard and difficult to process. Especially in the grinding process, the processing quality directly affects the next process. Diamond powder has characteristics such as high hardness and corrosion resistance, and has become the preferred raw material for grinding electronic products. However, in the processing process, most of the diamonds used as grinding powder are sourced from scraps, so their particle sizes are uneven. The damaged diamond particles will have multi-angle burrs, which will cause scratches on the semiconductor surface during the grinding process, and the grinding effect is not ideal.

[0003] Therefore, it is necessary to provide a processing method for diamond powder to overcome the above defects. Summary of the Invention

[0004] The purpose of the present invention is to provide an improved processing method for diamond powder, which can repair damaged diamond powder, passivate the burrs on its surface, repair scratches, thereby improving the usage efficiency of diamond powder, extending its service life, and reducing processing costs.

[0005] To achieve the above purpose, the processing method for diamond powder of the present invention includes the following steps:

[0006] Clean the diamond powder;

[0007] Sputter to form a first metal layer on the surface of the diamond powder; and

[0008] Sputter to form a second metal layer on the first metal layer, wherein the first metal layer is chromium and the second metal layer is tin.

[0009] Compared with the prior art, in the method of the present invention, first, the diamond powder is cleaned to remove impurities doped therein. Then, a first metal layer, that is, a chromium layer, is sputtered on the surface of the diamond powder, and then a second metal layer, that is, a tin layer, is formed on the first metal layer. Based on this, the bonding force between the chromium layer and the diamond powder is stable, and the tin layer and the chromium layer can adhere well together. Through the bonding force between the chromium layer and the tin layer and the diamond powder, the scratches, burrs, etc. on the surface of the damaged diamond powder can be effectively repaired, so that the diamond powder can be reused, extending its service life and reducing processing costs.

[0010] As an embodiment, forming the first metal layer includes: introducing argon and oxygen into the vacuum chamber, and controlling the air pressure in the vacuum chamber to be 2×10 -3 to 5×10 -3 Pa.

[0011] As an example, during the formation of the first metal layer, the temperature of the vacuum chamber is 30 - 50 °C.

[0012] Preferably, forming the first metal layer includes: controlling the sputtering power to be 400 - 500 W and the voltage to be 800 - 1000 V.

[0013] Preferably, forming the second metal layer includes: introducing argon into the vacuum chamber and controlling the air pressure in the vacuum chamber to be 2×10 -3 to 5×10 -3 Pa.

[0014] Preferably, forming the second metal layer further includes: controlling the sputtering power to be 1200 - 1500 W and the voltage to be 800 - 1000 V.

[0015] As an example, the thickness of the first metal layer is 20 - 50 μm, and the thickness of the second metal layer is 10 - 20 μm. Detailed implementation manners

[0016] To make the above objects, features, and advantages of the present application more obvious and understandable, the following describes the detailed implementation manners of the present application in combination with some examples. Many specific details are set forth in the following description to fully understand the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific examples disclosed below.

[0017] In the description of the present application, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless otherwise specifically defined.

[0018] In the present application, unless otherwise clearly specified and limited, the first feature being "on" or "under" the second feature may be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over", and "on top of" the second feature may be that the first feature is directly above or obliquely above the second feature, or merely indicates that the first feature has a higher horizontal height than the second feature. The first feature being "under", "below", and "beneath" the second feature may be that the first feature is directly below or obliquely below the second feature, or merely indicates that the first feature has a lower horizontal height than the second feature.

[0019] It should be noted that when an element is referred to as "fixed to" or "disposed on" another element, it can be directly on the other element or there may also be an intermediate element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intermediate element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are only for illustrative purposes and do not represent the only implementation.

[0020] The processing method of diamond powder of the present invention will be further described below in conjunction with embodiments, but the present invention is not limited thereby. The method of the present invention aims to provide a processing method of diamond powder, which can repair damaged diamond powder, blunt the burrs on its surface, repair scratches, thereby improving the use efficiency of diamond powder, extending its service life and reducing processing costs.

[0021] In an embodiment of the processing method of diamond powder of the present invention, the following steps are included:

[0022] Clean the diamond powder;

[0023] Sputter a first metal layer on the surface of the diamond powder; and

[0024] Sputter a second metal layer on the first metal layer, wherein the first metal layer is chromium and the second metal layer is tin.

[0025] In the method of the present invention, first, the diamond powder is cleaned to remove impurities doped therein. Then, a first metal layer, i.e., a chromium layer, is sputtered on the surface of the diamond powder. Then, a second metal layer, i.e., a tin layer, is formed on the first metal layer. Based on this, the bonding force between the chromium layer and the diamond powder is stable, and the tin layer and the chromium layer can adhere well together. Through the bonding force between the chromium layer and the tin layer and the diamond powder, scratches, burrs, etc. on the surface of the damaged diamond powder can be effectively repaired, so that the diamond powder can be put into use again, extending its service life and reducing processing costs.

[0026] Specifically, first, the diamond powder can be cleaned by an organic solvent to remove organic substances doped therein. The dried diamond powder is evenly spread on the oscillating disk in the vacuum chamber, and the oscillation frequency of the oscillating disk is between 200 and 250 Hz to obtain clean diamond powder.

[0027] Next, a magnetron sputtering method can be used to sputter and form a first metal layer on the surface of diamond powder. Specifically, the first metal layer is a chromium layer. In this sputtering process, a chromium target is used to sputter the diamond powder in a vacuum chamber. Specifically, argon and oxygen are introduced into the vacuum chamber. Optionally, the argon flow rate is 500 - 800 sccm, and the oxygen flow rate is 50 - 70 sccm. The air pressure in the vacuum chamber is controlled to be 2×10 -3 to 5×10 -3 Pa. Preferably, the temperature of the vacuum chamber is controlled at 30 - 50 °C. In addition, to ensure the sputtering effect, the distance between the diamond powder and the chromium target is controlled to be 10 - 30 cm. Under these conditions, the chromium target is turned on, and the power of the magnetron sputtering is controlled to be 400 - 500 W, the voltage of the magnetron sputtering is 800 - 1000 V, and the sputtering time is 20 - 30 minutes. Thus, the thickness of the formed first metal layer (i.e., the chromium layer) is 20 - 50 μm. This chromium layer can generate a strong bonding force on the surface of the diamond powder.

[0028] Next, a second metal layer is sputtered and formed on the first metal layer. In this sputtering process, a tin target is used to sputter the diamond powder in the vacuum chamber to form a tin layer. Specifically, argon is introduced into the vacuum chamber, and the argon flow rate is 500 - 800 sccm. The air pressure in the vacuum chamber is controlled to be 2×10 -3 to 5×10 -3 Pa. Under these conditions, the tin target is started, and the power of the magnetron sputtering is controlled to be 1200 - 1500 W, the voltage of the magnetron sputtering is 800 - 1000 V, and the sputtering time is 90 - 120 minutes. Thus, the thickness of the formed second metal layer (i.e., the tin layer) is 10 - 20 μm. This tin layer can generate a strong bonding force on the surface of the chromium layer. Thus, through the chromium layer and the tin layer, scratches, burrs, etc. on the surface of the diamond powder can be effectively passivated.

[0029] In summary, in the method of the present invention, first, the diamond powder is cleaned to remove the impurities doped therein. Next, a first metal layer, i.e., a chromium layer, is sputtered and formed on the surface of the diamond powder. Then, a second metal layer, i.e., a tin layer, is formed on the first metal layer. Based on this, the bonding force between the chromium layer and the diamond powder is stable, and the tin layer and the chromium layer can adhere well together. Through the bonding force between the chromium layer and the tin layer and the diamond powder, scratches, burrs, etc. on the damaged surface of the diamond powder can be effectively repaired, so that the diamond powder can be put back into use, extending its service life and reducing the processing cost.

[0030] The above-disclosed are only the preferred embodiments of the present invention. Of course, the scope of the rights of the present invention cannot be limited by this. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A processing method of diamond powder, characterized in that, It includes the following steps: Clean the diamond powder; Sputter to form a first metal layer on the surface of the diamond powder; And Sputter to form a second metal layer on the first metal layer, wherein the first metal layer is chromium and the second metal layer is tin.

2. The processing method of diamond powder according to claim 1, characterized in that, Forming the first metal layer includes: introducing argon and oxygen into a vacuum chamber and controlling the air pressure in the vacuum chamber to be 2×10 -3 to 5×10 -3 Pa.

3. The processing method of diamond powder according to claim 2, characterized in that, During the process of forming the first metal layer, the temperature of the vacuum chamber is 30 - 50 °C.

4. The processing method of diamond powder according to claim 1, characterized in that, Forming the first metal layer includes: controlling the sputtering power to be 400 - 500 W and the voltage to be 800 - 1000 V.

5. The processing method of diamond powder according to claim 1, characterized in that, Forming the second metal layer includes: introducing argon gas into a vacuum chamber and controlling the air pressure in the vacuum chamber to be 2×10 -3 Pa to 5×10 -3 Pa.

6. The processing method of diamond powder according to claim 5, characterized in that, Forming the second metal layer further includes: controlling the sputtering power to be 1200 - 1500 W and the voltage to be 800 - 1000 V.

7. The processing method of diamond powder according to claim 1, characterized in that, The thickness of the first metal layer is 20 - 50 μm, and the thickness of the second metal layer is 10 - 20 μm.