Silicon wafer measuring device and working method thereof

Abstract

The invention provides a silicon wafer measuring device and a working method thereof, and belongs to the technical field of semiconductor manufacturing. The silicon wafer measuring device comprises a temperature control chamber which is configured to accommodate a silicon wafer to be measured and an interferometer used for measuring the silicon wafer; the temperature sensor is arranged in the temperature control chamber and is configured to collect the temperature in the temperature control chamber in real time; the temperature control assembly is configured to provide airflow with a target temperature for the temperature control chamber; and the control unit is configured to receive the temperature of the temperature sensor and control the temperature control assembly to introduce the airflow with the target temperature into the temperature control cavity according to the temperature collected by the temperature sensor so as to regulate and control the temperature of the temperature control cavity. According to the technical scheme, the accuracy of measuring the silicon wafer can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and particularly to a silicon wafer measuring device and its working method. Background Art

[0002] Geometric parameters of a silicon wafer, such as the flatness, shape, and thickness of the silicon wafer, play a crucial role in the quality of the silicon wafer. Among them, measuring the flatness of the silicon wafer is an important task for evaluating the quality of the silicon wafer.

[0003] In related technologies, an interferometer is used to measure the flatness of a silicon wafer. The silicon wafer and the interferometer are very sensitive to temperature. If temperature fluctuations occur due to sudden factors, the interferometer and the silicon wafer will undergo small deformations due to thermal expansion and contraction, affecting the accuracy of the measurement. Summary of the Invention

[0004] In order to solve the above technical problems, the present invention provides a silicon wafer measuring device and its working method, which can improve the accuracy of measuring a silicon wafer.

[0005] To achieve the above object, the technical solution adopted in the embodiments of the present invention is:

[0006] A silicon wafer measuring device includes:

[0007] A temperature control chamber configured to accommodate a silicon wafer to be measured and an interferometer for measuring the silicon wafer;

[0008] A temperature sensor disposed in the temperature control chamber and configured to collect the temperature in the temperature control chamber in real time;

[0009] A temperature control component configured to supply an air flow at a target temperature to the temperature control chamber;

[0010] A control unit configured to receive the temperature of the temperature sensor and control the temperature control component to introduce an air flow at a target temperature into the temperature control chamber according to the temperature collected by the temperature sensor, so as to regulate the temperature of the temperature control chamber.

[0011] In some embodiments, the temperature control component includes:

[0012] A cylinder configured to supply an air flow;

[0013] An air flow control unit configured to regulate the temperature and / or flow rate of the air flow.

[0014] In some embodiments, the control unit is configured to control the temperature control component to introduce an air flow at a target temperature into the temperature control chamber to heat the temperature control chamber when the temperature collected by the temperature sensor is less than a preset temperature and the difference from the preset temperature is greater than a first preset threshold, and the target temperature is 1.8 - 2.2 °C higher than the preset temperature; and to control the temperature control component to introduce an air flow at a target temperature into the temperature control chamber to cool the temperature control chamber when the temperature collected by the temperature sensor is greater than the preset temperature and the difference from the preset temperature is greater than the first preset threshold, and the target temperature is 1.8 - 2.2 °C lower than the preset temperature.

[0015] In some embodiments, the preset temperature is 23 °C, or the preset temperature is the average temperature of the temperature control chamber in the previous time period;

[0016] The first preset threshold is 0.8 - 0.85 °C.

[0017] In some embodiments, the control unit is configured to control the temperature control chamber to stop operating and control the temperature control component to introduce an air flow at a target temperature into the temperature control chamber, the target temperature being 1.8 - 2.2 °C higher than the preset temperature, to heat the temperature control chamber when the temperature collected by the temperature sensor is less than the preset temperature and the difference from the preset temperature is greater than a second preset threshold, and to control the temperature control chamber to resume operation when the difference between the temperature collected by the temperature sensor and the preset temperature is less than or equal to the second preset threshold; and to control the temperature control chamber to stop operating and control the temperature control component to introduce an air flow at a target temperature into the temperature control chamber, the target temperature being 1.8 - 2.2 °C lower than the preset temperature, to cool the temperature control chamber when the temperature collected by the temperature sensor is greater than the preset temperature and the difference from the preset temperature is greater than the second preset threshold, and to control the temperature control chamber to resume operation when the difference between the temperature collected by the temperature sensor and the preset temperature is less than or equal to the second preset threshold.

[0018] In some embodiments, the preset temperature is 23 °C, or the preset temperature is the average temperature of the temperature control chamber in the previous time period;

[0019] The second preset threshold is 1 - 1.1 °C.

[0020] In some embodiments, the flow rate of the air flow is 0.9 - 1.2 m / s.

[0021] In some embodiments, the temperature control chamber includes:

[0022] A first chamber;

[0023] A second chamber located within the first chamber, the second chamber being configured to accommodate a silicon wafer to be measured and an interferometer for measuring the silicon wafer;

[0024] A gap is formed between the first chamber and the second chamber to form a gas passage for the airflow to enter.

[0025] An embodiment of the present invention also provides a working method for a silicon wafer measuring device, which is applied to the silicon wafer measuring device as described above. The method includes:

[0026] Using the temperature sensor to collect the temperature in the temperature control chamber in real time;

[0027] Using the control unit to control the temperature control component to introduce an airflow at a target temperature into the temperature control chamber according to the temperature collected by the temperature sensor, so as to regulate the temperature of the temperature control chamber.

[0028] An embodiment of the present invention also provides a silicon wafer measuring device, including a memory, a processor, and a computer program stored on the memory and executable on the processor; when the processor executes the program, the working method of the silicon wafer measuring device as described above is implemented.

[0029] The beneficial effects of the present invention are:

[0030] In this embodiment, the temperature in the temperature control chamber is collected in real time by using a temperature sensor, and the temperature control component is controlled to introduce an airflow at a target temperature into the temperature control chamber according to the temperature collected by the temperature sensor, so as to regulate the temperature of the temperature control chamber, reduce the temperature fluctuation in the temperature control chamber, avoid deformation of the silicon wafer and the interferometer, and improve the accuracy of measuring the silicon wafer. Description of the Drawings

[0031] Figure 1 Schematic structural diagram of an interferometer for measuring a silicon wafer;

[0032] Figure 2 Schematic structural diagram of the silicon wafer measuring device according to the embodiment of the present invention;

[0033] Figure 3 Schematic composition diagram of the silicon wafer measuring device according to the embodiment of the present invention.

[0034] Reference Signs

[0035] 1 First Chamber

[0036] 2 Second Chamber

[0037] 3 Temperature Sensor

[0038] 4 Cylinder

[0039] 5 Airflow Control Unit Detailed Implementation Manner

[0040] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are some, but not all, of the embodiments of the present invention. All other embodiments obtained by those of ordinary skill in the art based on the described embodiments of the present invention fall within the scope of protection of the present invention.

[0041] Figure 1 Schematic structural diagram of an interferometer for measuring a silicon wafer, as Figure 1 shown. The interferometer includes devices such as a beam splitter, a convex lens, and a reference mirror. The incident light is first split into two beams by the beam splitter. The reflected light after entering the reference mirror will interfere, forming an optical path difference with the light on the surface of the silicon wafer, and finally forming interference fringes in the camera. When the external temperature changes, the interferometer and the silicon wafer will undergo slight deformations due to thermal expansion and contraction, affecting the measurement accuracy.

[0042] The present invention provides a silicon wafer measuring device and its working method, which can improve the accuracy of measuring a silicon wafer.

[0043] An embodiment of the present invention provides a silicon wafer measuring device, as Figure 2 shown, including:

[0044] A temperature control chamber configured to accommodate a silicon wafer to be measured and an interferometer for measuring the silicon wafer;

[0045] A temperature sensor 3 disposed in the temperature control chamber, configured to collect the temperature in the temperature control chamber in real time;

[0046] A temperature control component configured to supply air flow at a target temperature to the temperature control chamber;

[0047] A control unit configured to receive the temperature of the temperature sensor 3 and control the temperature control component to introduce air flow at a target temperature into the temperature control chamber according to the temperature collected by the temperature sensor 3, so as to regulate the temperature of the temperature control chamber.

[0048] In this embodiment, the temperature in the temperature control chamber is collected in real time by using the temperature sensor 3, and the temperature control component is controlled to introduce air flow at a target temperature into the temperature control chamber according to the temperature collected by the temperature sensor 3, so as to regulate the temperature of the temperature control chamber, reduce the temperature fluctuation in the temperature control chamber, avoid deformation of the silicon wafer and the interferometer, and improve the accuracy of measuring the silicon wafer.

[0049] In some embodiments, the temperature control component includes:

[0050] A cylinder 4 configured to provide an air flow;

[0051] An air flow control unit 5 configured to regulate the temperature and / or flow rate of the air flow.

[0052] In this embodiment, the cylinder 4 can push the air flow into the temperature control chamber to automatically adjust the temperature of the temperature control chamber through the air flow, making the temperature of the temperature control chamber stable. The temperature sensor 3 can collect the temperature of the temperature control chamber in real time according to a preset collection period (such as 1 s). In some embodiments, when the temperature collected by the temperature sensor 3 is less than the preset temperature and the difference from the preset temperature is greater than the first preset threshold, the temperature of the air flow can be controlled to be greater than the preset temperature, and the temperature control chamber can be heated through the air flow so that the temperature of the temperature control chamber reaches the preset temperature; among them, the greater the flow rate of the air flow, the faster the heating rate of the temperature control chamber. When the temperature collected by the temperature sensor 3 is greater than the preset temperature and the difference from the preset temperature is greater than the first preset threshold, the temperature of the air flow can be controlled to be less than the preset temperature, and the temperature control chamber can be cooled through the air flow so that the temperature of the temperature control chamber reaches the preset temperature; among them, the greater the flow rate of the air flow, the faster the cooling rate of the temperature control chamber.

[0053] In some embodiments, the preset temperature is 23°C, or the preset temperature is the average temperature of the temperature control chamber in the previous time period (such as 24 hours); the target temperature of the air flow can be 1.8 - 2.2°C higher than the preset temperature or 1.8 - 2.2°C lower than the preset temperature, and the flow rate of the air flow can be 0.9 - 1.2 m / s, which can effectively heat or cool the temperature control chamber.

[0054] In some embodiments, the control unit is configured to, when the temperature collected by the temperature sensor 3 is less than the preset temperature and the difference from the preset temperature is greater than the first preset threshold, control the temperature control component to introduce an air flow with a target temperature into the temperature control chamber to heat the temperature control chamber, and the target temperature is 1.8 - 2.2°C higher than the preset temperature; when the temperature collected by the temperature sensor 3 is greater than the preset temperature and the difference from the preset temperature is greater than the first preset threshold, control the temperature control component to introduce an air flow with a target temperature into the temperature control chamber to cool the temperature control chamber, and the target temperature is 1.8 - 2.2°C lower than the preset temperature.

[0055] In this embodiment, the first preset threshold may be 0.8 - 0.85 °C. For example, it may be 0.8 °C, 0.81 °C, 0.82 °C, 0.83 °C, 0.84 °C, or 0.85 °C. This can ensure that the temperature fluctuation in the temperature control chamber does not exceed ±1 °C, thereby effectively avoiding deformation of the silicon wafer and the interferometer and ensuring the accuracy of measuring the silicon wafer.

[0056] In some embodiments, the control unit is configured to control the temperature control chamber to stop when the temperature collected by the temperature sensor 3 is less than the preset temperature and the difference from the preset temperature is greater than the second preset threshold, and control the temperature control component to introduce a gas flow at a target temperature into the temperature control chamber. The target temperature is 1.8 - 2.2 °C higher than the preset temperature to heat the temperature control chamber. When the difference between the temperature collected by the temperature sensor 3 and the preset temperature is less than or equal to the second preset threshold, control the temperature control chamber to resume operation; when the temperature collected by the temperature sensor 3 is greater than the preset temperature and the difference from the preset temperature is greater than the second preset threshold, control the temperature control chamber to stop and control the temperature control component to introduce a gas flow at a target temperature into the temperature control chamber. The target temperature is 1.8 - 2.2 °C lower than the preset temperature to cool the temperature control chamber. When the difference between the temperature collected by the temperature sensor 3 and the preset temperature is less than or equal to the second preset threshold, control the temperature control chamber to resume operation.

[0057] In some embodiments, the second preset threshold may be 1 - 1.1 °C. In this way, when the temperature fluctuation in the temperature control chamber exceeds 1 °C, the temperature control chamber can be automatically controlled to stop in time, avoiding waste of production capacity caused by product re-inspection due to untimely discovery by personnel and improving the effective operation rate of the equipment.

[0058] In some embodiments, as Figure 2 shown, the temperature control chamber includes:

[0059] A first chamber 1;

[0060] A second chamber 2 located inside the first chamber 1. The second chamber 2 is configured to accommodate the silicon wafer to be measured and the interferometer for measuring the silicon wafer. In order to ensure the accuracy of measuring the silicon wafer, the second chamber 2 may be a vacuum chamber;

[0061] There is a gap between the first chamber 1 and the second chamber 2 to form a gas channel for the gas flow to enter.

[0062] In this embodiment, instead of directly introducing the gas flow into the second chamber 2, the gas flow is introduced into the gas channel between the second chamber 2 and the first chamber 1, which can avoid the gas flow entering the second chamber 2 and contaminating the silicon wafer and the interferometer, and ensure the accuracy of silicon wafer measurement.

[0063] An embodiment of the present invention further provides a working method of a silicon wafer measuring device, which is applied to the silicon wafer measuring device as described above. The method includes:

[0064] Using the temperature sensor 3 to collect the temperature in the temperature control chamber in real time;

[0065] Using the control unit to control the temperature control component to introduce an air flow at a target temperature into the temperature control chamber according to the temperature collected by the temperature sensor 3, so as to regulate the temperature of the temperature control chamber.

[0066] In this embodiment, the temperature in the temperature control chamber is collected in real time by using the temperature sensor 3, and the temperature control component is controlled to introduce an air flow at a target temperature into the temperature control chamber according to the temperature collected by the temperature sensor 3, so as to regulate the temperature of the temperature control chamber, reduce the temperature fluctuation in the temperature control chamber, avoid the deformation of the silicon wafer and the interferometer, and improve the accuracy of measuring the silicon wafer.

[0067] In this embodiment, when the temperature collected by the temperature sensor 3 is less than the preset temperature, the difference from the preset temperature is greater than the first preset threshold and less than or equal to the second preset threshold, the temperature control component is controlled to introduce an air flow at a target temperature into the temperature control chamber to heat up the temperature control chamber, and the target temperature is 1.8 - 2.2 °C higher than the preset temperature; when the temperature collected by the temperature sensor 3 is greater than the preset temperature, the difference from the preset temperature is greater than the first preset threshold and less than or equal to the second preset threshold, the temperature control component is controlled to introduce an air flow at a target temperature into the temperature control chamber to cool down the temperature control chamber, and the target temperature is 1.8 - 2.2 °C lower than the preset temperature.

[0068] When the temperature collected by the temperature sensor 3 is less than the preset temperature and the difference from the preset temperature is greater than the second preset threshold, control the temperature control chamber to stop operating, and control the temperature control component to introduce air flow at the target temperature into the temperature control chamber. The target temperature is 1.8 - 2.2 °C higher than the preset temperature to raise the temperature of the temperature control chamber; when the difference between the temperature collected by the temperature sensor 3 and the preset temperature is less than or equal to the second preset threshold, control the temperature control chamber to resume operation; when the temperature collected by the temperature sensor 3 is greater than the preset temperature and the difference from the preset temperature is greater than the second preset threshold, control the temperature control chamber to stop operating, and control the temperature control component to introduce air flow at the target temperature into the temperature control chamber. The target temperature is 1.8 - 2.2 °C lower than the preset temperature to lower the temperature of the temperature control chamber. When the difference between the temperature collected by the temperature sensor 3 and the preset temperature is less than or equal to the second preset threshold, control the temperature control chamber to resume operation.

[0069] In some embodiments, the preset temperature can be 23 °C, or the preset temperature is the average temperature of the temperature control chamber in the previous time period (such as 24 hours); the first preset threshold can be 0.8 - 0.85 °C, which can ensure that the temperature fluctuation of the temperature control chamber does not exceed ±1 °C, thereby effectively avoiding the deformation of the silicon wafer and the interferometer and ensuring the accuracy of the measurement of the silicon wafer. The second preset threshold can be 1 - 1.1 °C, so that when the temperature fluctuation of the temperature control chamber exceeds 1 °C, the temperature control chamber can be automatically controlled to stop operating in time, avoiding waste of production capacity caused by product re-inspection due to untimely discovery by personnel.

[0070] This embodiment can realize the automatic monitoring and adjustment of the temperature of the temperature control chamber, avoiding the lag of personnel monitoring; automatically completing the stop and resume of operation, which can effectively improve the effective operation rate of the equipment and the data accuracy.

[0071] The embodiment of the present invention also provides a silicon wafer measuring device, as Figure 3 shown, including a memory 21, a processor 22, and a computer program stored on the memory 21 and executable on the processor 22; when the processor 22 executes the program, it realizes the working method of the silicon wafer measuring device as described above.

[0072] The embodiment of the present invention also provides a computer-readable storage medium, on which a computer program is stored. When the program is executed by a processor, it realizes the steps in the working method of the silicon wafer measuring device as described above.

[0073] Computer-readable media include both permanent and non-permanent, removable and non-removable media that can store information by any method or technology. The information can be computer-readable instructions, data structures, program modules, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassettes, magnetic tape magnetic disk storage or other magnetic storage to be detected terminal devices or any other non-transmission media that can be used to store information that can be accessed by a computing to be detected terminal device. As defined herein, computer-readable media does not include transitory media such as modulated data signals and carrier waves.

[0074] As described above, the above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present disclosure can easily think of changes or substitutions, which should be covered by the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A silicon wafer measuring device, characterized in that: include: a temperature controlled chamber configured to accommodate a silicon wafer to be measured and an interferometer for measuring the silicon wafer; A temperature sensor disposed in the temperature control chamber, configured to collect the temperature in the temperature control chamber in real time; a temperature control assembly configured to provide an airflow at a target temperature to the temperature control chamber; The control unit is configured to receive the temperature of the temperature sensor, and control the temperature control component to introduce a target temperature airflow into the temperature control chamber according to the temperature collected by the temperature sensor, so as to regulate the temperature of the temperature control chamber.

2. The silicon wafer measuring device according to claim 1, characterized in that: The temperature control assembly comprises: a cylinder configured to provide air flow; The airflow control unit is configured to adjust the temperature and / or flow rate of the airflow.

3. The silicon wafer measuring device according to claim 1, characterized in that: The control unit is configured to control the temperature control component to pass an airflow of a target temperature into the temperature control chamber to heat the temperature control chamber when the temperature collected by the temperature sensor is lower than a preset temperature and the difference between the temperature and the preset temperature is greater than a first preset threshold value, and the target temperature is 1.8-2.2°C higher than the preset temperature; and to control the temperature control component to pass an airflow of a target temperature into the temperature control chamber to cool the temperature control chamber when the temperature collected by the temperature sensor is higher than the preset temperature and the difference between the temperature and the preset temperature is greater than a first preset threshold value, and the target temperature is 1.8-2.2°C lower than the preset temperature.

4. The silicon wafer measuring device according to claim 3, characterized in that: The preset temperature is 23° C., or the preset temperature is the average temperature of the temperature control chamber over a period of time; The first preset threshold is 0.8-0.85°C.

5. The silicon wafer measuring device according to claim 1, characterized in that: The control unit is configured to control the temperature control chamber to shut down when the temperature collected by the temperature sensor is lower than the preset temperature and the difference between the temperature and the preset temperature is greater than a second preset threshold, and control the temperature control component to pass an airflow of a target temperature into the temperature control chamber, wherein the target temperature is 1.8-2.2°C higher than the preset temperature, so as to heat up the temperature control chamber, and control the temperature control chamber to restart when the difference between the temperature collected by the temperature sensor and the preset temperature is less than or equal to the second preset threshold; control the temperature control chamber to shut down when the temperature collected by the temperature sensor is higher than the preset temperature and the difference between the temperature and the preset temperature is greater than the second preset threshold, and control the temperature control component to pass an airflow of a target temperature into the temperature control chamber, wherein the target temperature is 1.8-2.2°C lower than the preset temperature, so as to cool down the temperature control chamber, and control the temperature control chamber to restart when the difference between the temperature collected by the temperature sensor and the preset temperature is less than or equal to the second preset threshold.

6. The silicon wafer measuring device according to claim 5, characterized in that: The preset temperature is 23° C., or the preset temperature is the average temperature of the temperature control chamber over a period of time; The second preset threshold is 1-1.1°C.

7. The silicon wafer measuring device according to claim 1, characterized in that: The flow rate of the airflow is 0.9-1.2 m / s.

8. The silicon wafer measuring device according to claim 1, characterized in that: The temperature control chamber comprises: First chamber; a second chamber located in the first chamber, the second chamber being configured to accommodate a silicon wafer to be measured and an interferometer for measuring the silicon wafer; A gap is provided between the first chamber and the second chamber to form a gas channel for the gas flow to enter.

9. A working method of a silicon wafer measuring device, characterized in that: Applied to the silicon wafer measuring device according to any one of claims 1 to 8, the method comprising: Using the temperature sensor to collect the temperature in the temperature control chamber in real time; The control unit is used to control the temperature control component to introduce an air flow of target temperature into the temperature control chamber according to the temperature collected by the temperature sensor, so as to regulate the temperature of the temperature control chamber.

10. A silicon wafer measuring device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor; characterized in that: When the processor executes the program, the operating method of the silicon wafer measurement device according to claim 9 is implemented.

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