Semiconductor temperature control module TVOC emission reduction system and method

By setting up a pumping and exhaust pipe and fan between the semiconductor temperature control module and the exhaust gas treatment module, the TVOC of the temperature control module is drained and discharged to the exhaust gas treatment module for processing, the problem of TVOC exceeding the standard of the temperature control module is solved, and the emission reduction effect is achieved at an efficient and low-cost and the safety of the production environment is improved.

CN120221471AActive Publication Date: 2025-06-27BEIJING JINGYI AUTOMATION EQUIP CO LTD
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Patent Information

Application Number
CN202510695964.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-05-28
Publication Date
2025-06-27
Estimated Expiration
2045-05-28

AI Technical Summary

Technical Problem

The total volatile organic compounds (TVOC) released by the temperature control module during semiconductor manufacturing exceeds the standard, resulting in environmental pollution and health risks. The existing technology has limited effect and high cost through ventilation or adsorbent treatment.

Method used

A semiconductor temperature control module TVOC emission reduction system is designed. By setting up a pumping and exhaust pipe, a pumping and exhaust fan and a waste exhaust pipe between the temperature control module and the exhaust gas treatment module, the TVOC is drained and discharged to the exhaust gas treatment module for processing, and the emission reduction process is monitored and controlled in real time through a TVOC concentration sensor, a gas flowmeter, a pressure sensor and a flow regulating valve.

Benefits of technology

It has achieved efficient emission reduction of the semiconductor temperature control module TVOC, which reduces environmental pollution and health risks, reduces treatment costs, and improves the safety of the production environment.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to a semiconductor temperature control module TVOC emission reduction system and method.The semiconductor temperature control module TVOC emission reduction system is used for TVOC emission reduction of a temperature control module, the temperature control module is connected with a pumping and discharging pipeline, the pumping and discharging pipeline is connected with a pumping and discharging fan, the pumping and discharging fan is connected with a waste gas treatment module through a waste discharging pipeline, and the waste gas treatment module is connected with the semiconductor temperature control module. The TVOC guiding module is used for guiding and discharging TVOC of the temperature control module to the waste gas treatment module for treatment; a TVOC (Total Volatile Organic Compound) concentration sensor, a gas flowmeter, a pressure sensor and a flow regulating valve are arranged on the pumping and discharging pipeline and / or the waste discharging pipeline and are electrically connected with a control module of the emission reduction system respectively; and the exhaust fan is electrically connected with the control module. The method can be suitable for TVOC standard exceeding treatment of the semiconductor manufacturing temperature control module, is especially suitable for the temperature control module with TVOC standard exceeding caused by use of glue, heat preservation cotton, cooling liquid and the like, and avoids the standard exceeding risk of total volatile organic compounds.
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Description

Technical Field

[0001] This application relates to the technical field of semiconductor manufacturing equipment. Specifically, it relates to a semiconductor temperature control module TVOC emission reduction system and method. Background Art

[0002] During the semiconductor manufacturing process, strict requirements are imposed on temperature. The temperature control module is usually used to precisely control the system temperature in the production of semiconductor integrated circuits to ensure the stability of the process and the quality of the products.

[0003] Combined with Figure 1 , the temperature control module mainly includes a liquid storage tank, a heater, a pressure regulator, a pump, and a refrigeration system, etc. At the same time, an external coolant input pipeline and a coolant output pipeline are required to input coolant for cooling.

[0004] Among them, the liquid storage tank, the coolant input pipeline, the coolant output pipeline, and the refrigeration system often need to be insulated to maintain the coolant temperature, reduce the loss of cold energy, and at the same time prevent condensation on the surface of the equipment and pipelines, which may damage the system.

[0005] The thermal insulation material mainly uses a large amount of thermal insulation cotton and glue, and these two materials usually release more volatile organic compound gases; the refrigerant is usually electronic fluorinated liquid, and the use of electronic fluorinated liquid has a certain risk of leakage, which may release a large amount of fluorinated compounds; volatile organic compounds and fluorinated compounds constitute the TVOC of the temperature control module, that is, the total volatile organic compounds of the temperature control module. The large release of TVOC will cause environmental pollution and health risks.

[0006] Regarding the TVOC released by the temperature control module, the traditional method mainly treats it through ventilation or adsorbents, but the effect is limited, and the cost of using adsorbents is relatively high. Therefore, there is an urgent need for an efficient and low-cost TVOC emission reduction solution. Summary of the Invention

[0007] The purpose of this application is to provide a semiconductor temperature control module TVOC emission reduction system and method, which can be applied to the treatment of TVOC exceeding the standard in the semiconductor manufacturing temperature control module, especially applicable to the temperature control module with TVOC exceeding the standard caused by the use of glue, thermal insulation cotton, coolant, etc., and avoid the risk of exceeding the standard of total volatile organic compounds.

[0008] To achieve the above purpose, in the first aspect, the present invention provides a semiconductor temperature control module TVOC emission reduction system for TVOC emission reduction of the temperature control module. The temperature control module is connected with an exhaust pipeline, the exhaust pipeline is connected with an exhaust fan, and the exhaust fan is connected with an exhaust gas treatment module through a waste discharge pipeline, and is used to lead the TVOC of the temperature control module to the exhaust gas treatment module for treatment; A TVOC concentration sensor, a gas flow meter, a pressure sensor, and a flow regulating valve are provided on the exhaust pipe and / or the waste discharge pipe, and are respectively electrically connected to the control module of the emission reduction system; The exhaust fan is electrically connected to the control module.

[0009] In an alternative embodiment, the temperature control module includes a temperature control module housing, on which a louvered shutter is provided. The louvered shutter is detachably connected to the temperature control module housing, and the louver opening degree of the louvered shutter is adjustable through an adjustment hole.

[0010] In an alternative embodiment, a plurality of exhaust ports are provided on the temperature control module housing. The exhaust pipe is connected to at least one of the exhaust ports, and the exhaust ports without connected pipes are plugged. The louvered shutter and the exhaust port are oppositely arranged on both sides of the temperature control module housing.

[0011] In an alternative embodiment, the exhaust port is a flange pipe opening provided on the temperature control module housing, including a first exhaust port and a second exhaust port respectively provided on the top and bottom sides of the temperature control module housing. The exhaust pipe is flange-connected to the first exhaust port, and the second exhaust port is plugged by a blind plate. The blind plate includes a permanent magnet blind plate detachably connected to the second exhaust port, and a sealing ring is lined on the plugging surface of the permanent magnet blind plate.

[0012] In an alternative embodiment, the louvered shutter includes two groups distributed vertically. Each group of louvered shutters includes a horizontal louvered shutter located in the upper part, and a pair of vertical louvered shutters located in the lower part. The vertical louvered shutters are arranged at the horizontal two ends of the horizontal louvered shutter.

[0013] In an alternative embodiment, the horizontal louvered shutter has openings at its two horizontal ends, and the vertical louvered shutters are arranged directly below the opening parts of the horizontal louvered shutter; The opening area of the vertical louvered shutter is larger than that of the horizontal louvered shutter.

[0014] In an alternative embodiment, both the exhaust pipe and the waste discharge pipe include stainless steel pipes, or a corrosion-resistant coating is lined on the inner side walls of the exhaust pipe and the waste discharge pipe.

[0015] In an alternative embodiment, the waste gas treatment module includes a burner or a plasma generator for treating waste gas. The burner or the plasma generator is electrically connected to the control module.

[0016] In an alternative embodiment, it further includes a monitoring terminal module, and the control module is electrically connected to the monitoring terminal module.

[0017] In a second aspect, the present invention provides a method for reducing TVOC emissions of a semiconductor temperature control module, which is carried out by the semiconductor temperature control module TVOC emission reduction system described above, and includes the following steps: Based on the data detected in real time by the TVOC concentration sensor, gas flow meter, and pressure sensor of the emission reduction system, determine the treatment parameters of TVOC; The control module controls and adjusts the operating power of the exhaust fan according to the treatment parameters of TVOC; During operation, the control module synchronously adjusts the operating parameters of the waste gas treatment device in the waste gas treatment module according to the TVOC treatment parameters of the temperature control module and the exhaust parameters of the tail gas after treatment by the waste gas treatment module; Based on the stability of the gas volume treated by the waste gas treatment module, the control module controls and adjusts the operating power of the exhaust fan according to the window opening of the temperature control module.

[0018] By arranging an exhaust pipe, an exhaust fan, and a waste discharge pipe between the temperature control module and the waste gas treatment module, the TVOC generated by the temperature control module can be led to the waste gas treatment module for treatment, thereby achieving the purpose of reducing TVOC emissions of the semiconductor temperature control module. At the same time, the TVOC of the temperature control module and the waste gas generated by other modules in the semiconductor manufacturing process are jointly treated by the waste gas treatment module, solving the problem of TVOC exceeding the standard in the prior art, thereby improving the production environment and avoiding health risks.

[0019] Combined with the TVOC concentration sensor, gas flow meter, pressure sensor, and flow regulating valve arranged on the exhaust pipe and / or the waste discharge pipe, and electrically connecting the above valves and components to the control module of the emission reduction system, an automated emission reduction operation of the semiconductor temperature control module TVOC can be formed, and at the same time, conditions are created for the automated linkage control with the waste gas treatment module.

[0020] At the same time, by electrically connecting the exhaust fan to the control module, the control module can control the operating frequency of the exhaust fan according to the received data signals such as concentration, pressure, and flow, so as to meet the emission reduction requirements of TVOC of the temperature control module.

[0021] The method for reducing TVOC emissions of the semiconductor temperature control module in this application can determine the treatment parameters of TVOC based on the relevant data of TVOC of the semiconductor temperature control module detected in real time, and enable the control module to control and adjust the operating power of the exhaust fan according to the treatment parameters of TVOC, so as to achieve the automated emission reduction operation of TVOC of the temperature control module.

[0022] At the same time, the control module can also control the operating parameters of the exhaust gas treatment device in the exhaust gas treatment module according to the TVOC processing parameters generated by the temperature control module to meet the normal operation of the semiconductor production process.

[0023] Other features and advantages of the present application will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0025] Figure 1 It is a structural schematic diagram of an existing semiconductor temperature control module; Figure 2 This is a structural schematic diagram of the TVOC emission reduction system of the semiconductor temperature control module in this application; Figure 3 It is a schematic diagram of the arrangement structure of the shutter cover plate on the housing of the temperature control module; Figure 4 It is a partial structural schematic diagram of the shutter cover; Figure 5 It is a schematic diagram of the arrangement structure of the exhaust port on the housing of the temperature control module; Figure 6 This is a flow chart of the TVOC emission reduction method for the semiconductor temperature control module in this application.

[0026] icon: 1-liquid storage tank; 2-heater; 3-pressure regulator; 4-pump; 5-refrigeration system; 6-coolant input pipeline; 7-coolant output pipeline; 10-temperature control module; 11-temperature control module housing; 12-louver sealing plate; 12a-horizontal louver sealing plate; 12b-vertical louver sealing plate; 13-adjusting hole; 14-extraction port; 14a-first extraction port; 14b-second extraction port; 15-permanent magnet blind plate; 16-control rod; 20-waste gas treatment module; 21-waste gas treatment device; 30-exhaust pipeline; 31-TVOC concentration sensor; 32-gas flow meter; 33-pressure sensor; 34-flow regulating valve; 40-waste discharge pipe; 50-Exhaust fan; 60-control module; 70-Monitoring terminal module. Detailed implementation manners

[0027] To make the objectives, technical solutions, and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are some, but not all, of the embodiments of the present application. Components of the embodiments of the present application usually described and illustrated in the drawings here can be arranged and designed in various different configurations.

[0028] In the description of the present application, it should be noted that the orientation or positional relationship indicated by terms such as "inner" and "outer" is based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of this application is usually placed during use. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present application. In addition, terms such as "first" and "second" are only used for distinguishing descriptions and cannot be understood as indicating or implying relative importance.

[0029] In the description of the present application, it should also be noted that unless otherwise clearly specified and limited, the terms "set" and "connect" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected, or indirectly connected through an intermediate medium, and it can be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific situations.

[0030] Combined with Figure 2 , in the semiconductor temperature control module emission reduction system of the present application, by setting necessary exhaust pipes and detection components between the temperature control module 10 and the waste gas treatment module 20, it is combined with the semiconductor waste gas treatment module 20 to effectively reduce the TVOC emission of the temperature control module 10 and solve the problem of excessive emission of the temperature control module 10 in the prior art.

[0031] The waste gas treatment module 20 is mainly used to treat toxic, corrosive, or flammable waste gas generated during semiconductor manufacturing, such as perfluorocarbon greenhouse gases and toxic gases generated by processes such as dry etching, thin film, and diffusion, such as CF4, NF3, SF6, C2F6, C2HF3, CH2F2, etc. At the same time, the waste gas treatment module 20 can also further treat a large amount of TVOC released from the temperature control module 10. By reducing and pumping a large amount of TVOC released from the temperature control module 10 to the waste gas treatment module 20, the waste gas treatment module 20 can concurrently treat a large amount of TVOC released from the temperature control module 10, achieving the purpose of emission reduction treatment of the semiconductor temperature control module 10.

[0032] See Figure 1The specific composition of the temperature control module 10 in it. The temperature control module 10 mainly includes a liquid storage tank 1, a heater 2, a pressure regulator 3, a pump 4, a refrigeration system 5, etc. At the same time, an external coolant input pipe 6 and a coolant output pipe 7 are required to input coolant for cooling.

[0033] When insulating the necessary pipeline equipment, the volatile organic compound gases dissipated by the insulating material will constitute the main part of the temperature control module 10. Another potential hazard part is the fluorinated gas that may leak from the electronic fluorinated liquid. The two together constitute the TVOC of the temperature control module 10.

[0034] By discharging the TVOC in the temperature control module 10 to the waste gas treatment module 20, the waste gas treatment module 20 can, while treating the waste gas generated during normal operation, also take into account the reduction of TVOC in the temperature control module 10.

[0035] Combined with Figure 2 , in the semiconductor temperature control module emission reduction system of the present application, the temperature control module 10 is connected to an exhaust pipe 30, the exhaust pipe 30 is connected to an exhaust fan 50, and the exhaust fan 50 is connected to the waste gas treatment module 20 through an exhaust pipe 40, for discharging the TVOC of the temperature control module 10 to the waste gas treatment module 20 for treatment.

[0036] Through the connection of the above different pipes to the exhaust fan 50, the TVOC in the temperature control module 10 can be discharged to the waste gas treatment module 20 and merged for treatment.

[0037] By setting a TVOC concentration sensor 31, a gas flow meter 32, a pressure sensor 33, and a flow regulating valve 34 on the exhaust pipe 30 and / or the exhaust pipe 40, it is mainly used to detect the waste gas concentration, pressure, and gas flow in the temperature control module 10 in real time. The waste gas concentration mainly includes the waste gas generated during normal production in the temperature control module 10 and the generated TVOC.

[0038] Combined with the different sensors, the gas flow meter 32, the flow regulating valve 34, and the exhaust fan 50 are respectively electrically connected to the control module 60 of the emission reduction system, which can enable the control module 60 to control the operation of the exhaust fan 50 according to the TVOC concentration and pressure conditions detected in real time in the temperature control module 10, and discharge the TVOC in the temperature control module 10 to the waste gas treatment module 20.

[0039] Furthermore, the control module 60 can control the opening degree of the flow regulating valve 34 according to the pressure condition and gas flow of the temperature control module 10 to achieve the operation of automatic emission reduction.

[0040] In this application, the TVOC concentration sensor 31, gas flow meter 32, pressure sensor 33, and flow regulating valve 34 are preferably arranged on the exhaust pipe 30 directly connected to the temperature control module 10, which can obtain relatively real and accurate real-time parameters of the temperature control module 10. At the same time, they are also arranged on the waste discharge pipe 40 connected to the waste gas treatment module 20, or the TVOC concentration sensor 31, gas flow meter 32, pressure sensor 33, and flow regulating valve 34 are arranged on both the exhaust pipe 30 and the waste discharge pipe 40, which can also achieve more precise automatic control operation.

[0041] Combined with Figures 3 - 5 , from the perspective of effectively sucking TVOC in the temperature control module 10, the temperature control module 10 includes a temperature control module housing 11. The temperature control module housing 11 is specifically a housing including a louvered sealing plate 12, which can adjust the vacuum negative pressure degree inside the temperature control module housing 11 during the suction operation of the suction fan by controlling the opening size of the louvers on the louvered sealing plate 12. The larger the opening, the smaller the negative pressure, and the lower the suction effect. While the smaller the opening, the higher the negative pressure, and the better the suction effect, but it will cause unnecessary impacts on the equipment of the temperature control module 10. During the suction process, external air is sucked into the housing through the opening and the TVOC is co-currently led to the waste gas treatment module 20.

[0042] By detachably connecting the louvered sealing plate 12 to the temperature control module housing 11 and fixing it with fasteners such as nuts, it can be sealed on the housing in a detachable form.

[0043] The louver opening of the louvered sealing plate 12 is adjustable through the adjustment hole 13, which can be flexibly adjusted to ensure that the TVOC released by the temperature control module 10 can be mixed with external air and effectively sucked away by the exhaust pipe 30, while avoiding excessive negative pressure inside the housing.

[0044] Combined with Figure 4 , an adjustment plate (not shown in the figure) is also arranged between the louvered sealing plate 12 and the temperature control module housing 11. The adjustment plate is also provided with an opening part with the same opening structure as the louvered sealing plate 12. A control rod 16 protruding from the adjustment hole 13 is arranged on the adjustment plate. By controlling the lifting of the control rod 16, the overlapping area between the opening part on the adjustment plate and the opening part of the louvered sealing plate 12 is controlled, and then the opening degree of the louvered sealing plate 12 is adjusted.

[0045] From the perspective of reducing the corrosion of the housing by waste gas and TVOC, the contact surface between the louvered sealing plate 12 and the housing uses high-temperature resistant and corrosion-resistant sealing materials to ensure airtightness.

[0046] In order to ensure the connection of the exhaust pipe 30 to the temperature control module housing 11, a plurality of exhaust ports 14 are provided on the temperature control module housing 11. The exhaust pipe 30 is connected to at least one exhaust port 14, and the exhaust ports 14 without connected pipes can be blocked as spare pipe openings.

[0047] Regarding the opening angle of the louvers, in order to enable an effective exhaust air flow to be formed between the exhaust port 14 and the louver seal plate 12, the louver seal plate 12 and the exhaust port 14 are oppositely arranged on both sides of the temperature control module housing 11, so that the suction air flow of the exhaust port 14 can correspondingly cover the side wall of the housing on the opposite side of the exhaust port 14, that is, the side wall of the housing provided with the louver seal plate 12, so as to form a stable and reliable air draft at the louver opening part on the side wall of the housing and ensure the exhaust effect.

[0048] The exhaust port 14 is a flange pipe opening provided on the temperature control module housing 11, which is conducive to the paired connection of the exhaust pipe 30 and the flange pipe opening. Based on the opening of a plurality of exhaust ports 14 on the temperature control module housing 11, in order to reduce the influence of multiple openings on the structural strength of the housing, the plurality of exhaust ports 14 should be arranged at a distance from each other. Specifically, the exhaust port 14 includes a first exhaust port 14a and a second exhaust port 14b respectively arranged on the top and bottom sides of the temperature control module housing 11. The exhaust pipe 30 is flange-connected to the first exhaust port 14a. In this case, the second exhaust port 14b is blocked as a spare port by a blind plate.

[0049] From the perspective of facilitating the flexible adjustment of the connection and blocking of the exhaust port 14, the corresponding blocking blind plate on the second exhaust port 14b is specifically made of a permanent magnet, and specifically includes a permanent magnet blind plate 15 detachably connected to the second exhaust port 14b. Through this setting method, it is convenient for disassembly and maintenance.

[0050] Furthermore, an additional regulating valve can be equipped at the exhaust port to control the gas flow. A sealing ring is lined on the blocking surface of the permanent magnet blind plate 15, which can achieve effective sealing under the condition of magnetic attraction blocking.

[0051] In order to fully cover the space inside the temperature control housing, the louver seal plate 12 includes two groups distributed up and down. Each group of louver seal plates 12 includes a horizontal louver seal plate 12a located in the upper part and a pair of vertical louver seal plates 12b located in the lower part. The vertical louver seal plates 12b are arranged at the horizontal two ends of the horizontal louver seal plate 12a.

[0052] More specifically, the horizontal louver seal plate 12a has openings at its two horizontal ends, and the vertical louver seal plates 12b are arranged directly below the opening parts of the horizontal louver seal plate 12a. Further, the opening area of the vertical louver seal plates 12b is larger than the opening area of the horizontal louver seal plate 12a.

[0053] Specifically, the horizontal louvered seal plate 12a has openings only at its horizontal two ends, while the vertical louvered seal plate 12b has openings in most areas, and the opening areas are almost continuously extended vertically. Thus, the horizontal and vertical louvered seal plates 12a and 12b form a crisscross opening arrangement, which can form a certain airflow intersection and ensure the suction and exhaust effect of TVOC inside the temperature control housing.

[0054] In this application, the exhaust pipe 30 and the waste pipe 40 are made of corrosion-resistant materials, such as 316L stainless steel. In this setting, both the exhaust pipe 30 and the waste pipe 40 include stainless steel pipes made of 316L material. Alternatively, the exhaust pipe 30 and the waste pipe 40 adopt an anti-corrosion form with an inner lining of a corrosion-resistant coating. In this setting, the inner side walls of the exhaust pipe 30 and the waste pipe 40 are lined with a corrosion-resistant polytetrafluoroethylene coating to adapt to the corrosiveness of TVOC.

[0055] The diameters of the exhaust pipe 30 and the waste pipe 40 are determined according to the gas flow rate and pressure loss, usually 40 - 100 mm, to ensure smooth gas flow.

[0056] The exhaust pipe 30 is connected to the exhaust port 14 for collecting TVOC released by the equipment. The exhaust port 14 is connected by a flange or a quick connector, which is convenient for maintenance and replacement.

[0057] Similarly, the waste gas treatment module 20 also includes an air inlet. The waste pipe 40 is connected to the air inlet of the waste gas treatment module 20, and the connection part can adopt a flange connection or a clamp connection, etc., to ensure the sealing performance.

[0058] During the operation of the exhaust fan 50, after the TVOC inside the temperature control module housing 11 is exhausted, it is led to the waste gas treatment module 20 through the waste pipe 40 and the air inlet. The waste gas treatment module 20 decomposes or adsorbs TVOC and waste gas by methods such as combustion, high-temperature plasma, or adsorption.

[0059] Specifically, the waste gas treatment module 20 includes a burner or a plasma generator for treating waste gas. Based on the automated linkage control relationship between the semiconductor temperature control module emission reduction system and the waste gas treatment module 20 described above, the control module 60 in this application is also electrically connected to the burner or the plasma generator, which can make the control module 60 of the emission reduction system and the waste gas treatment device 21 of the waste gas treatment module 20 form a linkage control effect.

[0060] When the waste gas treatment device 21 is in the form of a burner, the waste gas treatment module 20 uses a high-temperature combustion technology of 800°C to 1200°C to decompose TVOC and waste gas into harmless substances such as CO2 and H2O, and then cools the high-temperature gas to a safe temperature through water cooling to achieve safe purification and emission.

[0061] When the waste gas treatment device 21 is in the form of a plasma generator, high-energy electrons are generated by a high-temperature plasma generator to decompose gas molecules into low-toxic or non-toxic components, and then cooling is carried out to achieve safe purification and discharge.

[0062] At the same time, the waste gas treatment module 20 can also use activated carbon or corresponding adsorption catalysts to adsorb TVOC, which is suitable for the treatment of low-concentration gases.

[0063] The emission reduction system in the present invention further includes a monitoring terminal module 70, and the control module 60 is electrically connected to the monitoring terminal module 70. The monitoring terminal module 70 is used to monitor the TVOC concentration and adjust the working parameters of the exhaust fan 50 and the waste gas treatment device 21 to achieve automatic control.

[0064] Through the set TVOC concentration sensor 31, gas flowmeter 32 and pressure sensor 33, the gas state can be monitored in real time. The exhaust fan 50 can also adjust the air volume in real time according to sensors such as TVOC pressure. In addition, temperature sensors and flow sensors can be selected and installed according to needs to comprehensively monitor the operation state of the system.

[0065] The control module 60 uses a PLC or DCS as the core control unit, and automatically adjusts the opening of the flow regulating valve 34 on the exhaust pipe 30 and / or the waste discharge pipe 40 and the working parameters of the waste gas treatment device 21 in the waste gas treatment module 20, such as combustion temperature, plasma temperature, etc., according to the sensor data.

[0066] The monitoring terminal module 70 is equipped with a touch screen or a remote monitoring terminal, which can display the operation state of the system and the gas treatment effect in real time, and supports the alarm function. When the TVOC concentration exceeds the standard or the system is abnormal, it will automatically alarm and record the data.

[0067] At the same time, the monitoring terminal module 70 has a built-in data storage module to record historical operation data, supports export and analysis, and optimizes the system operation parameters through data analysis to improve the processing efficiency and reduce energy consumption.

[0068] See Figure 6 and at the same time in combination with Figure 2 This application also provides a method for reducing emissions of a semiconductor temperature control module, which is carried out through the semiconductor temperature control module emission reduction system described above, and includes the following steps: During the operation of the semiconductor temperature control module 10, adjust the louver opening of the louver seal plate 12 on the temperature control module housing 11 to ensure that the TVOC released by the equipment can be effectively drawn away by the exhaust pipe 30 after being mixed with the outside air, and at the same time avoid generating too high negative pressure inside the temperature control module 10 equipment.

[0069] The exhaust pipe 30 collects TVOC gas released by the temperature control module 10 through one or more exhaust ports 14 on the temperature control module housing 11 .

[0070] TVOC gas is introduced into the exhaust gas treatment module 20 through the exhaust pipe 40 and is removed through a decomposition or adsorption process. At the same time, the control module 60 monitors the TVOC concentration and system operation status in real time, and automatically adjusts parameters to ensure that TVOC is effectively treated and achieves standard emissions.

[0071] During operation of the emission reduction system, the processing parameters of TVOC are determined based on data detected in real time by the TVOC concentration sensor 31, the gas flow meter 32 and the pressure sensor 33 of the emission reduction system.

[0072] The control module 60 controls and adjusts the operating power of the exhaust fan 50 according to the processing parameters of TVOC, so as to maintain the pressure in the temperature control module housing 11 at a relatively stable micro-negative pressure state, thereby maintaining the suction effect of TVOC and exhaust gas.

[0073] During operation, the control module 60 synchronously adjusts the operating parameters of the exhaust gas treatment device 21 in the exhaust gas treatment module 20 according to the TVOC processing parameters of the temperature control module 10 and the exhaust parameters of the exhaust gas after treatment by the exhaust gas treatment module 20, so as to realize the linkage and synchronous operation of the emission reduction system and the exhaust gas treatment module 20.

[0074] In the dynamic control process, the linkage relationship between the temperature control module 10 and the exhaust gas treatment module 20 is optimized in the present application, and the basis of the optimization is to ensure the stability of the gas volume treated by the exhaust gas treatment module 20.

[0075] Specifically, since the exhaust gas treatment module 20 can simultaneously process the TVOC of the temperature control module 10 and the semiconductor process exhaust gas, it is necessary to establish a mixed treatment model of the semiconductor process exhaust gas with high flow, high concentration and volatility characteristics and the TVOC of the temperature control module 10 with low flow, low concentration and volatility characteristics.

[0076] The mixed exhaust gas ratio equation is established through the gas volume-pressure dynamic coupling control, specifically: The waste gas treatment module 20 includes a flow sensor for treating gas, through which the total gas volume treated by the waste gas treatment module 20 is monitored in real time, and the process waste gas fluctuation coefficient α and the temperature control exhaust efficiency β are calculated.

[0077] When the process waste gas volume increases suddenly, such as the waste gas volume fluctuates at a certain moment in the etching process, the control module adjusts the fan power in advance through the feedforward control algorithm to achieve a stable total volume of the mixed waste gas and maintain the operating stability of the waste gas treatment module 20.

[0078] Q 总 =Q工艺 ×(1 + α) + Q 温控 ×β Wherein, Q 总 is the total gas volume processed by the exhaust gas treatment module 20, Q 工艺 is the gas volume of the semiconductor process exhaust gas, Q 温控 is the TVOC gas volume of the temperature control module 10; α is the process exhaust gas fluctuation coefficient, and β is the temperature control exhaust extraction efficiency, both of which are determined fixed values.

[0079] The TVOC gas volume of the temperature control module 10 is jointly determined by the window opening degree and the power of the exhaust fan 50. When the window opening degree is determined, the power parameter of the exhaust fan 50 can be dynamically adjusted through the following correlation formula to maintain the target flow rate:

[0080] Wherein, P is the power of the exhaust fan; k is a dimensionless comprehensive correction coefficient, K pipe is the pipeline flow resistance coefficient; K window is the flow resistance coefficient of the shutter that is negatively correlated with the opening degree, S e is the equivalent throttling area directly related to the shutter window opening degree, and ρ is the air density.

[0081] The relationship converted to the total flow rate of the temperature control module 10 with the window opening degree and the fan power is:

[0082] Wherein, the comprehensive resistance coefficient is defined as:

[0083] The equivalent throttling area mapping is the core of the gas volume - pressure dynamic coupling control. Essentially, it simplifies the flow characteristics of the complex pipeline system into the mathematical expression of the equivalent throttling area S e to achieve precise control of the mixed exhaust gas volume.

[0084] The equivalent throttling area refers to the minimum effective flow area when the fluid passes through the throttling device, and its value is jointly determined by the actual geometric cross - sectional area and the fluid contraction effect.

[0085] The relationship between the shutter window opening degree and the equivalent throttling area includes: The shutter window opening degree (θ) directly affects the effective flow area S e . For a rectangular shutter, its equivalent area can be modeled as: S e = n × L × θ × sinα Where n is the number of blades; L is the blade length; θ is the opening angle of the louver from 0° to 90°, and α is the blade tilt angle, usually from 15° to 45°.

[0086] Based on the relationships at different angles established above, the control module stabilizes the gas volume processed by the waste gas treatment module. According to the window opening of the temperature control module, it controls and adjusts the operating power of the exhaust fan to achieve a stable and reliable control effect, taking into account the overall stability of the semiconductor manufacturing process.

[0087] Meanwhile, the independent fan of the waste gas treatment module is cancelled, and the exhaust fan of the temperature control module is directly used as the gas source. The control module adjusts the rotation speed of the exhaust fan in real time (±0.5Hz accuracy) to synchronously control the proportion of TVOC (5% - 15%) and oxygen content (18% - 22%) in the mixed waste gas; Dynamic air volume distribution: When the process waste gas volume decreases, such as the instantaneous waste gas volume fluctuation in the semiconductor manufacturing process, the exhaust air volume of the temperature control module is automatically increased to 120% of the design value to ensure no local accumulation of TVOC.

[0088] In the semiconductor temperature control module emission reduction system and method of the present invention, through the mutual combination of the temperature control module 10 and the waste gas treatment module 20, an optimized design is carried out for the TVOC emission characteristics of the temperature control module 10 equipment. While the waste gas treatment module 20 processes the waste gas of the semiconductor manufacturing process, it also solves the problem of TVOC exceeding the standard of the temperature control module 10 equipment, meeting the environmental protection requirements.

[0089] The louver seal plate structure of the temperature control module housing 11 and the magnetic suction exhaust port are simple in structure and easy to use and maintain.

[0090] The control module 60 realizes the automation and high efficiency of TVOC emission reduction, improves efficiency and effectively reduces the TVOC treatment cost.

[0091] The waste gas treatment module and the exhaust duct of the temperature control module are designed as a modular quick-release structure, supporting on-site expansion or maintenance within 1 hour.

[0092] When the waste gas treatment equipment fails, the TVOC of the temperature control device and the waste gas of the semiconductor manufacturing process are automatically switched to the emergency channel to ensure that the TVOC removal rate ≥ 99%.

[0093] It should be noted that, without conflict, the features in the embodiments of the present application can be combined with each other.

[0094] The above are only the preferred embodiments of the present application and are not used to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A semiconductor temperature control module TVOC emission reduction system for TVOC emission reduction of the temperature control module, characterized in that, The temperature control module is connected with an exhaust pipe, the exhaust pipe is connected with an exhaust fan, and the exhaust fan is connected with an exhaust gas treatment module through a waste exhaust pipe, which is used to lead the TVOC of the temperature control module to the exhaust gas treatment module for treatment; A TVOC concentration sensor, a gas flowmeter, a pressure sensor and a flow regulating valve are arranged on the exhaust pipe and / or the waste exhaust pipe, and are respectively electrically connected with the control module of the emission reduction system; The exhaust fan is electrically connected with the control module.

2. The semiconductor temperature-controlled module TVOC emission reduction system according to claim 1, characterized in that The temperature control module includes a temperature control module housing, and a louvered seal plate is arranged on the temperature control module housing. The louvered seal plate is detachably connected to the temperature control module housing, and the louver opening degree of the louvered seal plate is adjustable through an adjustment hole.

3. The semiconductor temperature control module TVOC emission reduction system according to claim 2, wherein, A plurality of exhaust ports are arranged on the temperature control module housing, the exhaust pipe is connected with at least one of the exhaust ports, and the exhaust ports not connected with the pipe are blocked; The louvered seal plate and the exhaust port are arranged on two sides of the temperature control module housing relatively.

4. The semiconductor temperature-controlled module TVOC emission reduction system according to claim 3, characterized in that, The exhaust port is a flange pipe orifice arranged on the temperature control module housing, including a first exhaust port and a second exhaust port respectively arranged on the top and bottom sides of the temperature control module housing. The exhaust pipe is flange-connected with the first exhaust port, and the second exhaust port is blocked by a blind plate. The blind plate includes a permanent magnet blind plate detachably connected to the second exhaust port, and a sealing ring is lined on the sealing surface of the permanent magnet blind plate.

5. The semiconductor temperature-controlled module TVOC emission reduction system according to claim 2, wherein, The louvered seal plate includes two groups distributed up and down. Each group of louvered seal plates includes a horizontal louvered seal plate located at the upper part and a pair of vertical louvered seal plates located at the lower part. The vertical louvered seal plates are arranged at the horizontal two ends of the horizontal louvered seal plate.

6. The semiconductor temperature control module TVOC emission reduction system according to claim 5, characterized in that, The horizontal louvered seal plate has openings at the two horizontal ends, and the vertical louvered seal plates are arranged directly below the opening parts of the horizontal louvered seal plate; The opening area of the vertical louvered seal plate is larger than that of the horizontal louvered seal plate.

7. The semiconductor temperature-controlled module TVOC emission reduction system according to claim 1, characterized in that, Both the exhaust pipe and the waste exhaust pipe include stainless steel pipes, or the inner side walls of the exhaust pipe and the waste exhaust pipe are lined with corrosion-resistant coatings.

8. The semiconductor temperature control module TVOC emission reduction system according to claim 1, characterized in that, The exhaust gas treatment module includes a burner or a plasma generator for treating exhaust gas, and the burner or the plasma generator is electrically connected with the control module.

9. The semiconductor temperature control module TVOC emission reduction system according to claim 1, characterized in that, It also includes a monitoring terminal module, and the control module is electrically connected with the monitoring terminal module.

10. A method for reducing the emission of TVOC in a semiconductor temperature control module, which is carried out by the semiconductor temperature control module TVOC emission reduction system according to any one of claims 1-9, characterized in that, It includes the following steps: Based on the data detected in real time by the TVOC concentration sensor, gas flowmeter and pressure sensor of the emission reduction system, determine the treatment parameters of TVOC; The control module controls and adjusts the operating power of the exhaust fan according to the treatment parameters of TVOC; During the operation, the control module synchronously adjusts the operating parameters of the exhaust gas treatment device in the exhaust gas treatment module according to the TVOC treatment parameters of the temperature control module and the exhaust parameters of the tail gas after being treated by the exhaust gas treatment module; Based on the stability of the gas volume treated by the exhaust gas treatment module, the control module controls and adjusts the operating power of the exhaust fan according to the window opening degree of the temperature control module.

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