Transparent display device

Abstract

A transparent display device is disclosed. The transparent display device includes: a first substrate including a transmissive area for transmitting external light and a non-transmissive area for not transmitting external light; a driving transistor in the non-transmissive region on the first substrate; an anode connection electrode on the driving transistor; and a light-emitting element on the anode connection electrode, the light-emitting element including an anode electrode, a light-emitting layer, and a cathode electrode. The anode electrode includes a first anode electrode and a second anode electrode. And an anode connection electrode electrically connected to the driving transistor on one side and extending from the non-transmissive region toward the transmissive region and electrically connected to each of the first anode electrode and the second anode electrode on the other side.

Description

Technical Field

[0001] The present disclosure relates to a display device, and in particular, for example but not limited to, relates to a transparent display device capable of reducing the size of a light-emitting area where dark spots occur. Background Art

[0002] Recently, research on transparent display devices in which a user can view an object or an image located on the rear surface has been actively conducted. The transparent display device includes a display area on which an image is displayed, and among them, the display area may include a transmissive area capable of transmitting external light. The transparent display device can have a high light transmittance in the display area through the transmissive area.

[0003] In addition, a plurality of sub-pixels provided with circuit elements and light-emitting elements may be provided in the non-transmissive area.

[0004] The descriptions provided in the description of the background art section should not be assumed to be prior art merely because they are mentioned in the description of the background art section or are associated with the description of the background art section. The description of the background art section may include information describing one or more aspects of the subject technology, and the description in this section does not limit the present invention. Summary of the Invention

[0005] The inventors have recognized that due to the penetration of moisture or oxygen from the outside, defects may occur in the light-emitting elements of a plurality of sub-pixels, and thus dark spots may occur. Since the transparent display device is provided with a transmissive area, the size of the light-emitting area is smaller than that of a general display device, and thus a user can easily see defective sub-pixels where dark spots occur. Therefore, in view of the above problems, the present disclosure has been made, and an object of the present disclosure is to provide a transparent display device capable of reducing the size of a light-emitting area where dark spots occur.

[0006] Another object of the present disclosure is to provide a transparent display device that can minimize or reduce the reduction in light transmittance due to an anode connection electrode for connecting divided anode electrodes.

[0007] Still another object of the present disclosure is to provide a transparent display device that can achieve environmental, social, and governance (ESG) by reducing the generation of greenhouse gases that may be generated due to the manufacturing process for manufacturing the transparent display device.

[0008] In addition to the objects of the present disclosure described above, those skilled in the art can clearly understand additional objects and features of the present disclosure from the following description of the present disclosure.

[0009] According to one aspect of the present disclosure, the above and other objects can be achieved by providing a transparent display device including: a first substrate including a transmissive region for transmitting external light and a non-transmissive region for not transmitting external light; a driving transistor located in the non-transmissive region on the first substrate; an anode connection electrode on the driving transistor; and a light-emitting element on the anode connection electrode and including an anode electrode, a light-emitting layer, and a cathode electrode. The anode electrode includes a first anode electrode and a second anode electrode. The anode connection electrode is electrically connected to the driving transistor on one side and extends toward the transmissive region and is electrically connected to each of the first anode electrode and the second anode electrode on the other side.

[0010] According to another aspect of the present disclosure, the above and other objects can be achieved by providing a transparent display device including a plurality of transmissive regions for transmitting external light; non-transmissive regions provided between adjacent transmissive regions among the plurality of transmissive regions; a driving transistor provided in the non-transmissive region and including an active layer, a gate electrode, a source electrode, and a drain electrode; an anode connection electrode provided on the driving transistor; and a light-emitting element provided on the anode connection electrode and including an anode electrode, a light-emitting layer, and a cathode electrode. The anode electrode includes a first anode electrode and a second anode electrode. The anode connection electrode electrically connects the first anode electrode and the second anode electrode to one of the source electrode and the drain electrode of the driving transistor.

[0011] Other details of the exemplary embodiments are included in the detailed description and the drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The above and other objects, features, and other advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which:

[0013] Figure 1 is a plan schematic view showing a transparent display device of an exemplary embodiment of the present disclosure;

[0014] Figure 2 is a view showing an example of a pixel provided in Figure 1 region A;

[0015] Figure 3 is a view showing Figure 2 an example of a circuit diagram of a sub-pixel;

[0016] Figure 4 is a view showing an example of a plurality of sub-pixels and a plurality of signal lines provided in Figure 2 region B;

[0017] Figure 5 is a view showing Figure 4 an example of a plan view of region C;

[0018] Figure 6 is a plan view showing a cutting area of an anode connection electrode;

[0019] Figure 7 is a view showing Figure 5 an example of I-I’;

[0020] Figure 8 is a view showing Figure 5 an example of II-II’;

[0021] Figure 9 is a view showing an example in which a cathode electrode and a package layer are damaged during laser cutting;

[0022] Figure 10 is a view showing Figure 4 another example of area C;

[0023] Figure 11 is a view showing Figure 10 an example of III-III’; and

[0024] Figure 12 is a view showing an example of forming a contact hole in a region overlapping with an active layer.

[0025] Throughout the drawings and the detailed description, unless otherwise described, the same reference numerals should be understood to refer to the same elements, features, and structures. For clarity, illustration, and convenience, the relative sizes and descriptions of these elements may be exaggerated. Detailed Description

[0026] Now, embodiments of the present disclosure will be described in detail, examples of which may be shown in the drawings. The progress of the described processing steps and / or operations is an example; however, the order of the steps and / or operations is not limited to that described herein and may be changed as known in the art, except for steps and / or operations that must occur in a specific order. The names of the respective elements used in the following explanations may be selected only for the convenience of writing the specification and may therefore be different from the names used in actual products.

[0027] Advantages and features of the present disclosure and methods for realizing them will be clarified by the following example embodiments described with reference to the drawings. However, the present disclosure may be implemented in different forms and should not be construed as limited to the example embodiments set forth herein. On the contrary, these example embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art. Furthermore, the present disclosure is defined only by the scope of the claims.

[0028] The shapes, sizes, ratios, angles, and quantities used in the accompanying drawings to describe the exemplary embodiments of the present disclosure are merely examples, and thus the present disclosure is not limited to the details shown. Similar reference numerals always refer to similar elements. In the following description, when it is determined that the detailed description of related known technologies unnecessarily obscures the gist of the present disclosure, the detailed description will be omitted. When using the terms "comprising", "having", "including", "containing", "constituting", "made of", "formed by", "composed of" described in the present disclosure, another part may be added unless "only" is used. Unless otherwise mentioned, terms in the singular form may include the plural form.

[0029] The shapes, sizes, dimensions (e.g., length, width, height, thickness, radius, diameter, area, etc.), ratios, angles, quantities, etc. of the elements shown in the accompanying drawings used to describe the exemplary embodiments of the present disclosure are merely examples, and the present disclosure is not limited thereto. Throughout the specification, the same reference numerals generally denote the same elements.

[0030] The dimensions including the size and thickness of each component shown in the accompanying drawings are shown for convenience of description, and the present disclosure is not limited to the size and thickness of the components shown. However, it should be noted that the relative dimensions including the relative size, position, and thickness of the components shown in each of the accompanying drawings submitted here are part of the present disclosure.

[0031] When interpreting an element, the element is interpreted as including a margin of error even though not explicitly described.

[0032] When describing positional relationships, for example, when the positional relationship between two parts is described as "on", "above", "over", "under", "below", "beside", "beneath", "near", "close to", "adjacent to", "on the side of", "close", one or more other parts may be provided between the two parts unless "exactly" or "directly" is used.

[0033] Spatially relative terms such as "under", "below", "beneath", "lower", "above", "upper", etc. may be used herein to facilitate the description of the relationship of one element or feature to another element or feature as shown in the figures. It should be understood that, in addition to the orientation shown in the figures, spatially relative terms may also include different orientations of an element during use or operation. For example, if an element in the figure is inverted, an element described as "under" or "below" another element or feature will be oriented "above" the other element or feature. Thus, the exemplary term "below" may include both the below and above orientations. Similarly, the exemplary terms "above" or "over" may include both the "above" and "below" orientations.

[0034] When an element or layer is disposed “on” another element or layer, another layer or another element may be directly interposed on the other element or between two elements or layers.

[0035] When describing temporal relationships, for example, when describing temporal precedence relationships such as “after,” “subsequently,” “next,” “before,” etc., it may include discontinuous cases, unless “immediately” or “directly” is used.

[0036] It should be understood that although terms such as “first,” “second,” “A,” “B,” “(A),” or “(B)” etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present disclosure, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element.

[0037] The term “at least one” should be understood to include any and all combinations of one or more of the associated listed items. For example, the meaning of “at least one of the first item, the second item, and the third item” represents all combinations of two or more of the first item, the second item, and the third item, as well as the first item, the second item, or the third item.

[0038] The term “device” as used herein may refer to a display device including a display panel and a driver for driving the display panel. Examples of the display device may include light-emitting elements, etc. Additionally, examples of the device may include a laptop computer, a television, a computer monitor, an automotive device, a wearable device, and an automotive equipment device, and respectively include light-emitting elements, etc. as a complete product or a final product of an electronic device (or equipment) set or a device (or equipment) set, for example, a mobile electronic device such as a smartphone or an electronic tablet, but the embodiments of the present disclosure are not limited thereto.

[0039] The features of the various exemplary embodiments of the present disclosure may be partially or wholly coupled or combined with each other and may be technically interoperable and driven in various ways. The exemplary embodiments of the present disclosure may be executed independently of each other or may be executed in a mutually dependent relationship.

[0040] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It will be further understood that terms, such as those defined in a commonly used dictionary, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0041] In aspects of the present disclosure, for ease of description, the source electrode and the drain electrode are distinguished from each other. However, the source electrode and the drain electrode may be used interchangeably. The source electrode may be the drain electrode, and the drain electrode may be the source electrode. In addition, the source electrode in any aspect of the present disclosure may be the drain electrode in another aspect of the present disclosure, and the drain electrode in any aspect of the present disclosure may be the source electrode in another aspect of the present disclosure.

[0042] Hereinafter, an example of a display device according to the present disclosure will be described with reference to the drawings. When assigning reference numerals to the components in each drawing, the same components may have the same reference numerals as much as possible, even if they are shown in different drawings. In addition, when it is determined that the detailed description of related known technologies unnecessarily obscures the gist of the present disclosure, the detailed description will be omitted.

[0043] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the drawings.

[0044] Figure 1 FIG. is a plan view showing a transparent display device according to an exemplary embodiment of the present disclosure. Figure 2 is a view showing Figure 1 an example of a pixel provided in region A of Figure 3 is a view showing Figure 2 an example of a circuit diagram of a sub-pixel of Figure 4 is a view showing Figure 2 an example of a plurality of sub-pixels and a plurality of signal lines provided in region B of

[0045] Hereinafter, the X-axis represents a direction parallel to the gate line, the Y-axis represents a direction parallel to the data line, and the Z-axis represents the height direction of the transparent display device 100. However, the present disclosure is not limited thereto. For example, the Y-axis may represent a direction parallel to the gate line, the X-axis may represent a direction parallel to the data line, and the Z-axis may represent the height direction of the transparent display device 100.

[0046] Although the transparent display device 100 according to an exemplary embodiment of the present disclosure is described as being implemented as an organic light emitting display (OLED), it may also be implemented as a liquid crystal display (LCD), a plasma display panel (PDP), a quantum dot light emitting display (QLED), or an electrophoretic display, and the present disclosure is not limited thereto.

[0047] Referring to Figure 1 , a transparent display device 100 according to an exemplary embodiment of the present disclosure includes a transparent display panel 110.

[0048] The transparent display panel 110 includes a first substrate 111 and a second substrate 112 facing each other. The second substrate 112 may be an encapsulation substrate. The first substrate 111 may be a plastic film, a glass substrate, or a silicon wafer substrate formed using semiconductor processes. The second substrate 112 may be a plastic film, a glass substrate, or an encapsulation film. The first substrate 111 and the second substrate 112 may be made of a transparent material.

[0049] The transparent display panel 110 may be divided into a display area DA and a non-display area NDA. Pixels P are formed in the display area DA to display an image, and the non-display area NDA is used not to display an image. The non-display area NDA may be an area adjacent to the display area DA. Further, the non-display area NDA may be an area adjacent to and configured to surround the display area DA. However, the present disclosure is not limited thereto.

[0050] For example, the non-display area NDA may include a first non-display area located outside the display area DA in a first direction, a second non-display area located outside the display area DA in a second direction intersecting the first direction, a third non-display area located outside the display area DA in a direction opposite to the first direction, and a fourth non-display area located outside the display area DA in a direction opposite to the second direction.

[0051] As another example, a boundary area between the display area DA and the non-display area NDA may be curved such that the non-display area NDA may be located below the display area. In this case, when a user views the display device from the front, little or no non-display area NDA may be visible to the user.

[0052] The non-display area NDA may include a pad area PA in which pads are provided and at least a scan driver 205. A plurality of pads may be provided in the pad area PA. Since the size of the first substrate 111 is larger than the size of the second substrate 112, a part of the first substrate 111 may be exposed and not covered by the second substrate 112. Pads such as power pads and data pads may be provided in the part of the first substrate 111 that is exposed and not covered by the second substrate 112.

[0053] The scan driver 205 may be formed in the non-display area NDA outside one or both sides of the display area DA in a gate-in-panel (GIP) mode. Alternatively, the scan driver 205 may be manufactured as a driving chip, encapsulated on a flexible film, and attached to the non-display area NDA outside one or both sides of the display area DA in a tape automated bonding (TAB) mode.

[0054] The first signal line SL1, the second signal line SL2, and the pixel P may be disposed in the display area DA. The first signal line SL1 may extend in the first direction (e.g., the Y-axis direction) in the display area DA. For example, the first signal line SL1 may be a data line, but is not limited thereto. The first signal line SL1 may include at least one of a first power line, a second power line, or a reference line.

[0055] The second signal line SL2 may extend in the second direction (e.g., the X-axis direction) in the display area DA and may intersect the first signal line SL1 in the display area DA. For example, the second signal line SL2 may be a scan line, but is not limited thereto.

[0056] As Figure 2 shown, the pixel P is disposed in an area where the first signal line SL1 is provided or in an area where the first signal line SL1 and the second signal line SL2 intersect each other, and may emit predetermined light to display an image.

[0057] A plurality of sub-pixels SP are the minimum units constituting the display area, and n sub-pixels SP form one pixel. Each of the plurality of sub-pixels SP may emit light having different wavelengths from each other. The plurality of sub-pixels may include a first sub-pixel, a second sub-pixel, and a third sub-pixel that emit light of different colors from each other. For example, the plurality of sub-pixels SP may include a red sub-pixel SP, a green sub-pixel SP, and a blue sub-pixel SP. According to the present exemplary embodiment, at least some of the plurality of pixels may further include a white sub-pixel SP. The plurality of sub-pixels SP may be variously modified in color and configuration as needed or appropriately. However, the present disclosure is not limited thereto.

[0058] For example, the plurality of sub-pixels SP may include a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the red sub-pixel, the green sub-pixel, and the blue sub-pixel may be arranged in a repeating manner. Alternatively, the plurality of sub-pixels SP may include a red sub-pixel, a green sub-pixel, a blue sub-pixel, and a white sub-pixel, and the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may be arranged in a repeating manner, or the red sub-pixel, the green sub-pixel, the blue sub-pixel, and the white sub-pixel may be arranged in a quadrilateral type. For example, the red sub-pixel, the blue sub-pixel, and the green sub-pixel may be sequentially arranged along the row direction, or the red sub-pixel, the blue sub-pixel, the green sub-pixel, and the white sub-pixel may be sequentially arranged along the row direction. However, in the embodiments of the present disclosure, the color type, arrangement type, and arrangement order of the sub-pixels are not limited, and may be configured in various forms according to the light-emitting characteristics, device lifetime, and device specifications.

[0059] In addition, according to the light-emitting characteristics, the sub-pixels may have different light-emitting areas. For example, a sub-pixel that emits light of a color different from that of the blue sub-pixel may have a light-emitting area different from that of the blue sub-pixel. For example, the red sub-pixel, the blue sub-pixel, and the green sub-pixel, or the red sub-pixel, the blue sub-pixel, the white sub-pixel, and the green sub-pixel may each have a different light-emitting area.

[0060] Specifically, the display area DA may include a first area NTA and a second area TA. A plurality of sub-pixels SP1, SP2, SP3, and SP4 are provided in the first area NTA, and a plurality of sub-pixels SP1, SP2, SP3, and SP4 are not provided in the second area TA. The first area NTA may be a non-transmissive area that does not transmit most of the light incident from the outside. The second area TA may be a transmissive area through which most of the light incident from the outside passes. For example, the transmissive area TA may be an area with a light transmittance greater than α%, and the non-transmissive area NTA may be an area with a light transmittance less than β%. In this case, α may be a value greater than β. Due to the transmissive area TA, the user can view an object or a background located on the rear surface of the transparent display panel 110.

[0061] The non-transmissive area NTA may include a first non-transmissive area NTA1, a second non-transmissive area NTA2, and a pixel P.

[0062] The first non-transmissive area NTA1 may extend in a first direction (e.g., the Y-axis direction) in the display area DA and may be set to at least partially overlap with the light-emitting areas EA1, EA2, EA3, and EA4. In the transparent display panel 110, a plurality of first non-transmissive areas NTA1 may be spaced apart from each other, and the transmissive area TA may be provided between two adjacent first non-transmissive areas NTA1. A plurality of first signal lines SL1 extending in the first direction (e.g., the Y-axis direction) may be set to be spaced apart from each other in each first non-transmissive area NTA1.

[0063] The first signal line SL1 may include at least one of a first power line VDDL, a reference line REFL, data lines DL1, DL2, DL3, and DL4, or a second power line VSSL, as Figure 4 shown.

[0064] The first power line VDDL may supply a first power supply to the driving transistor of each of the sub-pixels SP1, SP2, SP3, and SP4 provided in the display area DA. The second power line VSSL may supply a second power supply to the second electrode of the sub-pixels SP1, SP2, SP3, and SP4 provided in the display area DA. In this case,

[0065] The second power supply may be a common power supply commonly supplied to the sub-pixels SP1, SP2, SP3, and SP4. The reference line REFL may supply an initialization voltage (or reference voltage) to the driving transistors of each of the sub-pixels SP1, SP2, SP3, and SP4 disposed in the display area DA. Each of the data lines DL1, DL2, DL3, and DL4 may supply a data voltage to the sub-pixels SP1, SP2, SP3, and SP4.

[0066] In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, pixels P are disposed between adjacent transmissive regions TA, and the pixels P may include light-emitting regions EA1, EA2, EA3, and EA4 in which light-emitting elements are disposed to emit light. Since the transparent display panel 110 has small-sized non-transmissive regions NTA, circuit elements may be disposed to overlap with the light-emitting regions EA1, EA2, EA3, and EA4. That is, at least a portion of the light-emitting regions EA1, EA2, EA3, and EA4 may overlap with circuit regions CA1, CA2, CA3, and CA4 in which circuit elements are disposed.

[0067] For example, the circuit regions may include a first circuit region CA1 in which circuit elements connected to the first sub-pixel SP1 are disposed, a second circuit region CA2 in which circuit elements connected to the second sub-pixel SP2 are disposed, a third circuit region CA3 in which circuit elements connected to the third sub-pixel SP3 are disposed, and a fourth circuit region CA4 in which circuit elements connected to the fourth sub-pixel SP4 are disposed.

[0068] The second non-transmissive region NTA2 may extend between two adjacent first non-transmissive regions NTA1 in a second direction (e.g., the X-axis direction). The second non-transmissive region NTA2 may be disposed between two adjacent transmissive regions TA. In the transparent display panel 110, a plurality of second non-transmissive regions NTA2 are spaced apart from each other, and a transmissive region TA may be disposed between two adjacent second non-transmissive regions NTA2. The second signal line SL2 may be disposed in the second non-transmissive region NTA2.

[0069] The second signal line SL2 may extend in the second direction (e.g., the X-axis direction) and may include, for example, a scan line SCANL. The scan line SCANL may supply a scan signal to the sub-pixels SP1, SP2, SP3, and SP4 of the pixel P.

[0070] Each of the pixels P is disposed in the first non-transmissive region NTA1 and emits light to display an image. The light-emitting region EA may correspond to a region where light is emitted from the pixel P.

[0071] As Figure 2 and Figure 4As shown, each pixel P may include a first sub-pixel SP1, a second sub-pixel SP2, a third sub-pixel SP3, and a fourth sub-pixel SP4. The first sub-pixel SP1 may include a first light-emitting region EA1 that emits light of a first color, and the second sub-pixel SP2 may include a second light-emitting region EA2 that emits light of a second color. The third sub-pixel SP3 may include a third light-emitting region EA3 that emits light of a third color, and the fourth sub-pixel SP4 may include a fourth light-emitting region EA4 that emits light of a fourth color.

[0072] For example, the first to fourth light-emitting regions EA1, EA2, EA3, and EA4 may emit light of different colors. For example, the first light-emitting region EA1 may emit white light, and the second light-emitting region EA2 may emit green light. The third light-emitting region EA3 may emit red light, and the fourth light-emitting region EA4 may emit blue light. However, the present disclosure is not limited to the above examples. In addition, various modifications may be made to the arrangement order of the sub-pixels SP1, SP2, SP3, and SP4.

[0073] In addition, the light-emitting regions EA1, EA2, EA3, and EA4 respectively provided in the plurality of sub-pixels SP1, SP3, and SP4 may include a plurality of light-emitting regions divided into a plurality of parts. Specifically, the first light-emitting region EA1 provided in the first sub-pixel SP1 may include a first sub-light-emitting region EA11 and a second sub-light-emitting region EA12 divided into two parts. The second light-emitting region EA2 provided in the second sub-pixel SP2 may include a first sub-light-emitting region EA21 and a second sub-light-emitting region EA22 divided into two parts. The third light-emitting region EA3 provided in the third sub-pixel SP3 may include a first sub-light-emitting region EA31 and a second sub-light-emitting region EA32 divided into two parts. The fourth light-emitting region EA4 provided in the fourth sub-pixel SP4 may include a first sub-light-emitting region EA41 and a second sub-light-emitting region EA42 divided into two parts. However, the present disclosure is not limited thereto, and the light-emitting regions EA1, EA2, EA3, and EA4 respectively provided in the plurality of sub-pixels SP1, SP3, and SP4 may include a plurality of light-emitting regions divided into more than two parts. For example, the first light-emitting region EA1 provided in the first sub-pixel SP1 may include a first sub-light-emitting region, a second sub-light-emitting region, and a third sub-light-emitting region divided into three parts. The second light-emitting region EA2 provided in the second sub-pixel SP2 may include a first sub-light-emitting region, a second sub-light-emitting region, and a third sub-light-emitting region divided into three parts. The third light-emitting region EA3 provided in the third sub-pixel SP3 may include a first sub-light-emitting region, a second sub-light-emitting region, and a third sub-light-emitting region divided into three parts. The fourth light-emitting region EA4 provided in the fourth sub-pixel SP4 may include a first sub-light-emitting region, a second sub-light-emitting region, and a third sub-light-emitting region divided into three parts.

[0074] When each of the sub-pixels SP1, SP2, SP3, and SP4 is turned on by a scan signal of the scan line SCANL so that the data voltage of the data line DL is supplied to the gate electrode of the driving transistor, the light-emitting element can emit light according to the drain-source current of the driving transistor.

[0075] Reference Figure 3 , each of the sub-pixels SP1, SP2, SP3, and S4 may have a 2T (transistor) 1C (capacitor) structure including two transistors DT and ST and one capacitor Cst, but is not limited thereto. Each of the sub-pixels SP1, SP2, and SP3 may further include a compensation circuit CC, and in this case, may have various structures such as 3T1C, 4T2C, 5T2C, 6T2C, 7T1C, and 7T2C.

[0076] Each of the transistors DT and ST in each of the sub-pixels SP1, SP2, SP3, and SP4 includes a gate electrode, a source electrode, and a drain electrode. Since the source electrode and the drain electrode are not fixed and can be changed according to the voltage applied to the gate electrode and the current direction, one of the source electrode and the drain electrode may be represented as the first electrode, and the other may be represented as the second electrode. Each of the transistors DT and ST in each of the sub-pixels SP1, SP2, SP3, and SP4 may use at least one of a polysilicon semiconductor, an amorphous silicon semiconductor, or an oxide semiconductor. The transistors DT and ST may be P-type or N-type transistors, or P-type and N-type transistors may be used interchangeably.

[0077] The transistor may be a thin-film transistor TFT. The active layer of the thin-film transistor TFT may be formed of a semiconductor material, such as an oxide semiconductor, an amorphous semiconductor, or a polycrystalline semiconductor, but is not limited thereto.

[0078] The oxide semiconductor material may have an excellent effect of preventing or reducing leakage current and a relatively low manufacturing cost. The oxide semiconductor may be made of metal oxides such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), and titanium (Ti), or a combination of metals such as zinc (Zn), indium (In), gallium (Ga), tin (Sn), or titanium (Ti) and their oxides. Specifically, the oxide semiconductor may include zinc oxide (ZnO), zinc tin oxide (ZTO), zinc indium oxide (ZIO), indium oxide (InO), titanium oxide (TiO), indium gallium zinc oxide (IGZO), indium zinc tin oxide (IZTO), indium zinc oxide (IZO), indium gallium tin oxide (IGTO), and indium gallium oxide (IGO), but is not limited thereto.

[0079] Polycrystalline semiconductor materials have fast carrier mobilities such as electrons and holes, so they have high mobilities, low power consumption, and excellent reliability. The polycrystalline semiconductor can be made of polycrystalline silicon (poly-Si), but is not limited thereto.

[0080] Amorphous semiconductor materials can be made of amorphous silicon (a-Si), but are not limited thereto.

[0081] The light-emitting element ED may include an anode electrode connected to the driving transistor DT, a cathode electrode receiving a second power supply voltage EVSS from a second power line VSSL, and a light-emitting layer between the anode electrode and the cathode electrode. The anode electrode is an independent electrode for each light-emitting element, but the cathode electrode may be a common electrode shared by all light-emitting elements. When a driving current is supplied from the driving transistor DT, electrons from the cathode electrode can be injected into the light-emitting layer and holes from the anode electrode can be injected into the light-emitting layer, so that the light-emitting element ED can allow a fluorescent or phosphorescent material to emit light through the recombination of electrons and holes in the light-emitting layer, thereby generating light with a brightness proportional to the current value of the driving current.

[0082] In each of the sub-pixels SP1, SP2, SP3, and SP4, the driving transistor DT is connected between the anode electrode of the light-emitting element ED and a first power line VDDL for supplying a driving voltage EVDD. In this case, the first electrode of the driving transistor DT is applied with the driving voltage EVDD.

[0083] The driving transistor DT is a transistor for driving the light-emitting element ED and is controlled by a voltage applied to the gate electrode to supply a current to the light-emitting element ED. Thus, the light-emitting element ED is driven.

[0084] In each of the sub-pixels SP1, SP2, and SP3, the switching transistor ST is connected between the first node N1 of the driving transistor DT and the data line DL. The switching transistor ST is controlled by a scan signal Scan supplied from the scan line SCANL to apply a data voltage Vdata supplied from the data line DL to the first node N1.

[0085] In each of the sub-pixels SP1, SP2, SP3, and SP4, a capacitor Cst is connected to the first node N1 to charge the voltage applied to the first node N1. The capacitor Cst can supply the charged driving voltage to the driving transistor DT. The capacitor Cst is a storage capacitor.

[0086] The compensation circuit CC may be configured to compensate for the threshold voltage of the driving transistor DT. The compensation circuit CC may be formed of one or more transistors. The compensation circuit CC may include one or more transistors and capacitors and may be variously configured according to a compensation method. A pixel including the compensation circuit CC may have various structures such as 3T1C, 4T2C, 5T2C, 6T1C, 7T1C, and 7T2C.

[0087] Hereinafter, reference will be made to Figures 4 to 10 describe in detail the circuit elements, the light-emitting element ED, and the anode connection electrode ACE provided in the transparent display panel 110 according to an exemplary embodiment of the present disclosure.

[0088] Figure 5 is a plan view showing an example of region C of Figure 4 and is a plan view showing a cutting region of the anode connection electrode, Figure 6 is a cross-sectional view showing an example of I-I' of Figure 7 is a cross-sectional view showing an example of II-II' of Figure 5 and is a view showing an example in which the cathode electrode and the encapsulation layer are damaged during laser cutting. Figure 8 is a cross-sectional view showing an example of II-II' of Figure 5 and is a view showing an example in which the cathode electrode and the encapsulation layer are damaged during laser cutting. Figure 9 is a view showing an example in which the cathode electrode and the encapsulation layer are damaged during laser cutting.

[0089] Referring to Figures 4 to 8 , the transparent display panel 110 according to an exemplary embodiment of the present disclosure includes a first substrate 111 and a second substrate 112 facing each other, and circuit elements, an anode connection electrode ACE, a light-emitting element ED, an encapsulation layer 180, a color filter CF, and a black matrix BM may be provided between the first substrate 111 and the second substrate 112.

[0090] The circuit elements are provided for each of the sub-pixels SP1, SP2, SP3, and SP4 in the non-transmissive region NTA and may include various signal lines, thin film transistors, and capacitors. The signal lines may include scan lines, data lines, power lines, etc., and the thin film transistors may include switching transistors and driving transistors DT. The switching transistors may be switched according to a scan signal supplied to the gate line to charge the capacitor Cst with a data voltage supplied from the data line.

[0091] The driving transistor DT and the capacitor Cst may be provided in the non-transmissive region NTA and connected to the light-emitting element ED of each of the plurality of sub-pixels SP1, SP2, SP3, and SP4.

[0092] The driving transistor DT includes an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE. In addition, the capacitor Cst may include a first capacitor electrode CstE1 and a second capacitor electrode CstE2, but is not limited thereto. In another exemplary embodiment, the capacitor Cst may further include a third capacitor electrode.

[0093] Specifically, a light-shielding layer LS may be provided on the first substrate 111. The light-shielding layer LS can block external light and prevent the characteristics of components disposed inside the display panel from being changed due to external light. Additionally, the light-shielding layer LS may include a metal material and may transmit an electrical signal. The light-shielding layer LS may be provided to overlap with the region where the driving transistor DT is formed and may be used to block external light incident on the active layer ACT of the driving transistor DT. Further, the light-shielding layer LS may be provided in a region where an electrode made of the same material as that of the active layer ACT is formed on the same layer as the active layer ACT. For example, as Figure 5 shown, the first capacitor electrode CstE1 of the capacitor Cst may be formed of the same material as the active layer ACT of the driving transistor DT on the same layer as the active layer ACT of the driving transistor DT. In this case, the light-shielding layer LS may be provided to overlap with the region where the capacitor Cst is formed and may block external light incident on the first capacitor electrode CstE1 of the capacitor Cst.

[0094] The light-shielding layer LS may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

[0095] A buffer layer 120 may be provided on the light-shielding layer LS. The buffer layer 120 serves to protect the driving transistor DTR from impurities such as hydrogen and moisture that penetrate through the first substrate 111 that is vulnerable to moisture penetration, and may extend not only to the display area DA including the non-transmissive area NTA and the transmissive area TA, but also to the non-display area NDA including the pad area PA. The buffer layer 120 may have a single-layer structure or a multi-layer structure including an inorganic insulating material such as silicon oxide (SiOx), silicon nitride (SiNx), and aluminum oxide (Al2O3). For example, the buffer layer 120 may be formed by a single layer or multiple layers of inorganic films. For example, the single-layer inorganic film may be a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, and the multi-layer inorganic film may be formed by alternately laminating one or more layers of silicon oxide (SiOx) films, one or more layers of silicon nitride (SiNx) films, and one or more layers of amorphous silicon (a-Si), but the present disclosure is not limited thereto. However, depending on the structure or characteristics of the display device, the buffer layer 120 may not be included.

[0096] The active layer ACT of the driving transistor DT may be provided on the buffer layer 120. Also, the first capacitor electrode CstE1 of the capacitor Cst may be provided on the same layer as the active layer ACT of the driving transistor DT. In this case, the first capacitor electrode CstE1 of the capacitor Cst may be provided spaced apart from the active layer ACT of the driving transistor DT. The first capacitor electrode CstE1 of the capacitor Cst and the active layer ACT of the driving transistor DT may be formed of a silicon-based semiconductor material or an oxide-based semiconductor material, but are not limited thereto.

[0097] The gate insulating layer 130 may be provided on the first capacitor electrode CstE1 of the capacitor Cst and the active layer ACT of the driving transistor DT. The gate insulating layer 130 may be formed of an inorganic layer, such as a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, or a multi-layer thereof. For example, the gate insulating layer 130 may be formed by a single-layer or multi-layer inorganic film. For example, the single-layer inorganic film may be a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, and the multi-layer inorganic film may be formed by alternately laminating one or more silicon oxide (SiOx) films, one or more silicon nitride (SiNx) films, and one or more amorphous silicon (a-Si), but the present disclosure is not limited thereto.

[0098] The gate electrode GE, source electrode SE, and drain electrode DE of the driving transistor DT may be provided on the gate insulating layer 130. The gate electrode GE, source electrode SE, and drain electrode DE of the driving transistor DT may be formed of the same material on the same layer as shown, but are not limited thereto. In another exemplary embodiment, the source electrode SE and drain electrode DE of the driving transistor DT may be formed of different materials on different layers from the gate electrode GE. The source electrode SE may be connected to the active layer ACT through the fourth contact hole CH4, and the drain electrode DE may be connected to the active layer ACT through the fifth contact hole CH5. Figure 5 shown, but are not limited thereto. In another exemplary embodiment, the source electrode SE and drain electrode DE of the driving transistor DT may be formed of different materials on different layers from the gate electrode GE. The source electrode SE may be connected to the active layer ACT through the fourth contact hole CH4, and the drain electrode DE may be connected to the active layer ACT through the fifth contact hole CH5.

[0099] In addition, the second capacitor electrode CstE2 of the capacitor Cst may be provided on the same layer as the gate electrode GE, source electrode SE, and drain electrode DE of the driving transistor DT. The second capacitor electrode CstE2 of the capacitor Cst may be formed to extend from the source electrode SE or drain electrode DE of the driving transistor DT. Accordingly, the second capacitor electrode CstE2 of the capacitor Cst may be electrically connected to the source electrode SE or drain electrode DE of the driving transistor DT.

[0100] The second capacitor electrode CstE2 of the capacitor Cst and the gate electrode GE, source electrode SE, and drain electrode DE of the driving transistor DT may be formed of a single layer or multiple layers made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

[0101] The first insulating layer 140 may be disposed on the second capacitor electrode CstE2 of the capacitor Cst and the gate electrode GE, source electrode SE, and drain electrode DE of the driving transistor DT. The first insulating layer 140 may be formed of an inorganic layer, such as a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, or a multi-layer thereof. For example, the first insulating layer 140 may be formed by a single layer or multiple layers of an inorganic film. For example, the single layer of the inorganic film may be a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, and the multi-layer of the inorganic film may be formed by alternately stacking one or more layers of a silicon oxide (SiOx) film, one or more layers of a silicon nitride (SiNx) film, and one or more layers of amorphous silicon (a-Si), but the present disclosure is not limited thereto. The first insulating layer 140 may extend not only to the display area including the non-transmissive area NTA and the transmissive area TA but also to the non-display area NDA including the pad area PA.

[0102] The anode connection electrode ACE may be disposed on the first insulating layer 140. The anode connection electrode ACE electrically connects the driving transistor DT to the first electrode E1 of the light-emitting element ED. A detailed description of the anode connection electrode ACE will be given later.

[0103] The second insulating layer 150 for protecting the driving transistor DT, the capacitor Cst, and the anode connection electrode ACE may be disposed on the anode connection electrode ACE. The second insulating layer 150 may be formed of an inorganic layer, such as a silicon oxide (SiOx) layer, a silicon nitride (SiNx) layer, or a multi-layer thereof. For example, the second insulating layer 150 may be formed by a single layer or multiple layers of an inorganic film. For example, the single layer of the inorganic film may be a silicon oxide (SiOx) film or a silicon nitride (SiNx) film, and the multi-layer of the inorganic film may be formed by alternately stacking one or more layers of a silicon oxide (SiOx) film, one or more layers of a silicon nitride (SiNx) film, and one or more layers of amorphous silicon (a-Si), but the present disclosure is not limited thereto. The second insulating layer 150 may extend not only to the display area DA but also to the non-display area NDA including the pad area PA.

[0104] A planarization layer 160 for planarizing the step differences caused by the driving transistor DT, the capacitor Cst, and the anode connection electrode ACE may be disposed on the second insulating layer 150. The planarization layer 160 may be disposed in the non-transmissive region NTA and may not be disposed in at least a part of the transmissive region TA. For example, the planarization layer 160 may include an opening region overlapping at least a part of the transmissive region TA. The planarization layer 160 may deteriorate the transparency by causing refraction of light during light transmission. Therefore, the transparent display panel 110 according to an exemplary embodiment of the present disclosure may increase the transparency by removing a part of the planarization layer 160 from the transmissive region TA.

[0105] The planarization layer 160 may be formed of an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.

[0106] The light-emitting element ED including the first electrode E1, the light-emitting layer EL, and the second electrode E2 and the bank 165 are disposed on the planarization layer 160.

[0107] The first electrode E1 is disposed on the planarization layer 160 and may be electrically connected to the driving transistor DT. The first electrode E1 may be electrically connected to the source electrode SE or the drain electrode DE of the driving transistor DTR through the anode connection electrode ACE.

[0108] Specifically, the first electrode E1 may be formed as a plurality of electrodes in each of the plurality of sub-pixels SP1, SP2, SP3, and SP4. For example, the first electrode E1 may include a first anode electrode E11 and a second anode electrode E12. The first anode electrode E11 may be disposed in the first sub-light-emitting regions EA11, EA21, EA31, and EA41, and the second anode electrode E12 may be disposed in the second sub-light-emitting regions EA12, EA22, EA32, and EA42. The first anode electrode E11 and the second anode electrode E12 may be disposed spaced apart from each other on the same layer.

[0109] The first anode electrode E11 and the second anode electrode E12 may be electrically connected to each other through the anode connection electrode ACE. The anode connection electrode ACE may include a first anode connection electrode ACE1 and a second anode connection electrode ACE2.

[0110] The first anode connection electrode ACE1 may have one end electrically connected to the first anode electrode E11 through the first contact hole CH1 and may have the other end electrically connected to the second anode electrode E12 through the second contact hole CH2. Therefore, the first anode connection electrode ACE1 may electrically connect the first anode electrode E11 and the second anode electrode E12.

[0111] The second anode connection electrode ACE2 may protrude from one side of the first anode connection electrode ACE1 and extend into the region where the driving transistor DT is formed. The second anode connection electrode ACE2 may be electrically connected to the first anode connection electrode ACE1 at one end and may be electrically connected to the source electrode SE or the drain electrode DE of the driving transistor DT through the third contact hole CH3 at the other end. Accordingly, the second anode connection electrode ACE2 may electrically connect the first anode electrode E11 and the second anode electrode E12 to the source electrode SE or the drain electrode DE of the driving transistor DTR.

[0112] For example, the first anode electrode E11 and the second anode electrode E12 may be electrically connected to each other through the first anode connection electrode ACE1 and may be electrically connected to the source electrode SE or the drain electrode DE of the driving transistor DTR through the second anode connection electrode ACE2.

[0113] The first electrode E1 including the first anode electrode E11 and the second anode electrode E12 may be provided for each of the sub-pixels SP1, SP2, SP3, and SP4 and may not be provided in the transmissive region TA. The bank 165 is provided between the adjacent first electrodes E1, so that the adjacent first electrodes E1 may be electrically insulated from each other.

[0114] The first electrode E1 may be formed of a metal material having a high reflectivity, such as a stacked structure of aluminum and titanium (Ti / Al / Ti), a stacked structure of aluminum and ITO (ITO / Al / ITO), an Ag alloy, a stacked structure of an Ag alloy and ITO (ITO / Ag alloy / ITO), a MoTi alloy, and a stacked structure of a MoTi alloy and ITO (ITO / MoTi alloy / ITO). The Ag alloy may be an alloy of silver (Ag), palladium (Pd), copper (Cu), etc. The MoTi alloy may be an alloy of molybdenum (Mo) and titanium (Ti). The first electrode E1 may be an anode electrode. Hereinafter, the first electrode E1 may be represented as an anode electrode. The first electrode and the anode electrode may represent the same element.

[0115] The bank 165 may be provided on the planarization layer 160. The bank 165 may be provided at the boundary between the plurality of sub-pixels SP and may suppress color mixing of light beams from the plurality of sub-pixels SP. For example, the bank 165 may be provided between the first electrodes E1 respectively provided in the plurality of sub-pixels SP1, SP2, SP3, and SP4. For example, the bank 165 may be formed to cover the edge of each first electrode E1 and expose a part of each first electrode E1. Accordingly, the bank 165 may prevent or mitigate the problem of deterioration of the light-emitting efficiency due to current concentration at the end of the first electrode E1.

[0116] The bank 165 may define the light-emitting regions EA1, EA2, EA3, and EA4 of the sub-pixels SP1, SP2, SP3, and SP4. The light-emitting regions EA1, EA2, EA3, and EA4 of the sub-pixels SP1, SP2, SP3, and SP4 represent regions where the first electrode E1, the light-emitting layer EL, and the second electrode E2 are sequentially stacked and emit light through the combination of holes from the first electrode E1 and electrons from the second electrode E2 in the light-emitting layer EL. In this case, the regions where the bank 165 is not formed and the first electrode E1 is exposed may be the light-emitting regions EA1, EA2, EA3, and EA4.

[0117] The bank 165 may be formed of an organic film such as an acrylic-based material, an epoxy-based material, a phenolic-based material, a polyamide-based material, and a polyimide-based material. In addition, the bank 165 may include an inorganic insulating material such as silicon nitride (SiNx) or silicon oxide (SiOx), or the bank 165 may be formed of a black resin. However, the present disclosure is not limited thereto.

[0118] The light-emitting layer EL may be disposed on the first electrode E1. The light-emitting layer EL may include a light-emitting material layer EML containing a light-emitting material. The light-emitting material may include an organic material, an inorganic material, or a hybrid material. The light-emitting layer EL may have a multilayer structure. For example, the light-emitting layer EL may further include at least one of a hole injection layer HIL, a hole transport layer HTL, an electron transport layer ETL, and an electron injection layer EIL. In this case, when a voltage is applied to the first electrode E1 and the second electrode E2, holes and electrons move to the light-emitting material layer through the hole transport layer and the electron transport layer, respectively, and combine with each other in the light-emitting material layer to emit light.

[0119] In an exemplary embodiment, the light-emitting layer EL may be a common layer formed in the sub-pixels SP1, SP2, SP3, and SP4. In this case, the light-emitting layer EL may be a white light-emitting layer for emitting white light. The light-emitting layer EL may be disposed in a non-transmissive region NTA and a transmissive region TA including the light-emitting regions EA1, EA2, EA3, and EA4, but is not limited thereto. The light-emitting layer EL may be patterned and formed only in the non-transmissive region NTA including the light-emitting regions EA1, EA2, EA3, and EA4. For example, the light-emitting layer EL may not be disposed in the transmissive region TA.

[0120] In another exemplary embodiment, a light-emitting material layer of the light-emitting layer EL may be formed for each of the sub-pixels SP1, SP2, SP3, and SP4. For example, a white light-emitting layer for emitting white light may be formed in the first sub-pixel SP1, a green light-emitting layer for emitting green light may be formed in the second sub-pixel SP2, a red light-emitting layer for emitting red light may be formed in the third sub-pixel SP3, and a blue light-emitting layer for emitting blue light may be formed in the fourth sub-pixel SP4. In this case, the light-emitting material layer of the light-emitting layer EL may not be formed in the transmissive region TA. However, except for the light-emitting material layer, a hole injection layer HIL, a hole transport layer HTL, an electron transport layer ETL, and an electron injection layer EIL may be commonly formed in the sub-pixels SP1, SP2, SP3, and SP4, and may also be formed in the transmissive region TA.

[0121] The second electrode E2 may be disposed on the light-emitting layer EL. The second electrode E2 may be a common layer that is commonly formed in the sub-pixels SP1, SP2, SP3, and SP4 to apply the same voltage.

[0122] The second electrode E2 may be formed of a transparent conductive material (TCO) such as ITO or IZO that can transmit light, or a semi-transmissive conductive material such as magnesium (Mg), silver (Ag), or an alloy of magnesium (Mg) and silver (Ag). When the second electrode E2 is formed of a semi-transmissive metal material, the light-emitting efficiency may be improved by a microcavity. The second electrode E2 may be a cathode electrode of the light-emitting element ED. Hereinafter, the second electrode E2 may be referred to as a cathode electrode. The second electrode and the cathode electrode may represent the same element.

[0123] As described above, each light-emitting element ED may be composed of an overlapping portion of the first electrode E1, the light-emitting layer EL, and the second electrode E2. Each light-emitting element ED may form a predetermined light-emitting region. For example, the light-emitting region of each light-emitting element ED may include a region where the first electrode E1, the light-emitting layer EL, and the second electrode E2 overlap.

[0124] The encapsulation layer 180 may be disposed on the light-emitting element ED. The encapsulation layer 180 may be formed on the second electrode E2 to cover the second electrode E2. The encapsulation layer 180 is used to prevent oxygen or moisture from penetrating into the light-emitting layer EL and the second electrode E2. To this end, the encapsulation layer 180 may include at least one inorganic layer and at least one organic layer. The encapsulation layer 180 may have a structure in which inorganic layers and organic layers are alternately stacked, but is not limited thereto.

[0125] For example, the encapsulation layer 180 has a structure in which an inorganic encapsulation layer and an organic encapsulation layer are alternately stacked, so that the encapsulation layer 180 can protect the light-emitting element while suppressing the infiltration of moisture or oxygen into the light-emitting element. For example, the encapsulation layer 180 may have a multi-insulating film structure in which an organic film and an inorganic film are alternately stacked. The inorganic film can block the penetration of moisture or oxygen. The organic film can planarize the surface of the inorganic film. When the organic film and the inorganic film are stacked in multiple layers, the movement path of moisture or oxygen can be longer than that of a single layer, thereby effectively blocking the penetration of moisture and oxygen that affect the light-emitting layer EL. For example, the encapsulation layer 180 includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer stacked in sequence. For example, the encapsulation layer 180 includes a first inorganic encapsulation layer, a first organic encapsulation layer, a second inorganic encapsulation layer, a second organic encapsulation layer, and a third inorganic encapsulation layer stacked in sequence. However, the present disclosure is not limited thereto.

[0126] The first inorganic encapsulation layer, the second inorganic encapsulation layer, and the third inorganic encapsulation layer can be used to block the penetration of moisture or oxygen. The first inorganic encapsulation layer, the second inorganic encapsulation layer, and the third inorganic encapsulation layer can be made of inorganic materials, such as inorganic materials such as silicon nitride (SiNx), silicon oxide (SiOx), or aluminum oxide (AlOx). However, the present disclosure is not limited thereto.

[0127] The first organic encapsulation layer is disposed between the first inorganic encapsulation layer and the second inorganic encapsulation layer, and the second organic encapsulation layer is disposed between the second inorganic encapsulation layer and the third inorganic encapsulation layer. The first organic encapsulation layer and the second organic encapsulation layer can each have a greater thickness than each of the first inorganic encapsulation layer, the second inorganic encapsulation layer, and the third inorganic encapsulation layer, so as to adsorb or block particles that may be generated during the manufacturing process of the display device. The first organic encapsulation layer and the second organic encapsulation layer can fill cracks that may form in the first inorganic encapsulation layer and the second inorganic encapsulation layer. The first organic encapsulation layer and the second organic encapsulation layer can planarize the upper portions of the first inorganic encapsulation layer and the second inorganic encapsulation layer by covering the particles on the first inorganic encapsulation layer and the second inorganic encapsulation layer, respectively. For example, the first organic encapsulation layer can planarize the upper portion of the first inorganic encapsulation layer by covering the particles on the first inorganic encapsulation layer. For example, the second organic encapsulation layer can planarize the upper portion of the second inorganic encapsulation layer by covering the particles on the second inorganic encapsulation layer. The first organic encapsulation layer and the second organic encapsulation layer can be made of organic materials, and for example, epoxy polymers, acrylic polymers, etc. can be used. However, the present disclosure is not limited thereto.

[0128] In addition, the encapsulation layer 180 is not limited to three layers or five layers. For example, it can include n layers (where n is an integer greater than 3) in which an inorganic encapsulation layer and an organic encapsulation layer are alternately stacked.

[0129] In addition, although Figure 6 and Figure 7Although not shown in the figure, a cover layer may be additionally formed between the second electrode E2 and the encapsulation layer 180.

[0130] The color filter CF may be disposed on the encapsulation layer 180. The color filter CF may be disposed on a surface of the second substrate 112 facing the first substrate 111. The color filter CF may be patterned for each of the sub-pixels SP1, SP2, and SP3.

[0131] Specifically, the color filter CF may include a first color filter, a second color filter, a third color filter, and a fourth color filter. The first color filter may be disposed corresponding to the light-emitting region EA1 of the first sub-pixel SP1, and may be a white color filter for emitting white light. The white color filter may be formed of a transparent organic material for emitting white light. The second color filter may be disposed corresponding to the light-emitting region EA2 of the second sub-pixel SP2, and may be a green color filter for emitting green light. The third color filter may be disposed corresponding to the light-emitting region EA3 of the third sub-pixel SP3, and may be a red color filter for emitting red light. The fourth color filter may be disposed corresponding to the light-emitting region EA4 of the fourth sub-pixel SP4, and may be a blue color filter for emitting blue light.

[0132] The black matrix BM may be disposed between the color filters CF patterned for each of the sub-pixels SP1, SP2, SP3, and SP4. The black matrix BM may be disposed between the sub-pixels SP1, SP2, SP3, and SP4, and may prevent color mixing between adjacent sub-pixels SP1, SP2, SP3, and SP4. In addition, the black matrix BM may prevent light incident from the outside from reflecting on the plurality of signal lines disposed between the sub-pixels SP1, SP2, SP3, and SP4.

[0133] In addition, the black matrix BM is disposed between the transmissive region TA and the plurality of sub-pixels SP1, SP2, SP3, and SP4, so that light emitted from each of the plurality of sub-pixels SP1, SP2, SP3, and SP4 can be prevented from moving to the transmissive region TA. The black matrix BM may include a light-absorbing material, such as a black dye that absorbs all light in the visible band.

[0134] The above color filter CF and black matrix BM are not disposed in the transmissive region TA to maintain a high light transmittance in the transmissive region TA.

[0135] The first substrate 111 provided with the light-emitting element ED and the second substrate 112 provided with the color filter CF and the black matrix BM may be joined to each other through an adhesive layer 190. The adhesive layer may be an optically transparent resin layer (OCR) or an optically transparent adhesive film (OCA), but is not limited thereto.

[0136] The transparent display panel 110 according to an exemplary embodiment of the present disclosure may connect the anode electrode E1 to the driving transistor DT using the anode connection electrode ACE. Specifically, the anode connection electrode ACE may include a first anode connection electrode ACE1 and a second anode connection electrode ACE2. The first anode connection electrode ACE1 may be electrically connected to the first anode electrode E11 at one end through the first contact hole CH1 and may be electrically connected to the second anode electrode E12 at the other end through the second contact hole CH2.

[0137] The first anode connection electrode ACE1 may include a first contact portion CT1, a second contact portion CT2, and a first connection portion CN1. The first contact portion CT1 may be disposed on one side of the first anode electrode E11 to overlap at least a part of the first anode electrode E11. The first anode electrode E11 may be provided with a protrusion protruding from one side toward the transmissive region TA to contact the first contact portion CT1. The first contact portion CT1 may overlap with the protrusion of the first anode electrode E11. In this case, the first contact portion CT1 may be disposed between the black matrix BM and the transmissive region TA. The first contact portion CT1 may be connected to the first anode electrode E11 through the first contact hole CH1.

[0138] The second contact portion CT2 may be disposed on one side of the second anode electrode E12 to overlap at least a part of the second anode electrode E12. The second anode electrode E12 may be provided with a protrusion protruding from one side toward the transmissive region TA to contact the second contact portion CT2. The second contact portion CT2 may overlap with the protrusion of the second anode electrode E12. In this case, the second contact portion CT2 may be disposed between the black matrix BM and the transmissive region TA. The second contact portion CT2 may be connected to the second anode electrode E12 through the second contact hole CH2.

[0139] The first connection portion CN1 may connect the first contact portion CT1 and the second contact portion CT2. The first contact portion CT1 and the second contact portion CT2 may be spaced apart from each other along the direction in which the first anode electrode E11 and the second anode electrode E12 are disposed. For example, the first anode electrode E11 and the second anode electrode E12 may be disposed to be spaced apart from each other in a first direction (e.g., the Y-axis direction). In this case, the first contact portion CT1 and the second contact portion CT2 may be disposed to be spaced apart from each other in the first direction (e.g., the Y-axis direction). The first connection portion CN1 may extend along the first direction (e.g., the Y-axis direction) to connect the first contact portion CT1 and the second contact portion CT2.

[0140] The first connection portion CN1 may have one end connected to the first contact portion CT1 and the other end connected to the second contact portion CT2. The first connection portion CN1 may have a straight line between the first contact portion CT1 and the second contact portion CT2.

[0141] In addition, the first connection portion CN1 may not protrude more than the first contact portion CT1 and the second contact portion CT2 in the transmission region TA. A boundary between the first connection portion CN1 and the transmission region TA may not protrude more than a boundary between the first contact portion CT1 and the transmission region TA and a boundary between the second contact portion CT2 and the transmission region TA in the transmission region TA. For example, as Figure 5 shown, a boundary between the first connection portion CN1 and the transmission region TA may form a straight line on a vertical line with a boundary between the first contact portion CT1 and the transmission region TA and a boundary between the second contact portion CT2 and the transmission region TA. For example, as Figure 5 shown, the width of the first connection portion CN1 in the second direction (e.g., the X-axis direction) is smaller than the width of each of the first contact portion CT1 and the second contact portion CT2 in the second direction (e.g., the X-axis direction).

[0142] The first anode connection electrode ACE1 should be disposed in a region that does not overlap with the black matrix BM for the laser cutting process. The first anode connection electrode ACE1 may be disposed between the black matrix BM and the transmission region TA. Thus, the non-transmission region NTA may have a region that protrudes from one side of the non-transmission region NTA toward the transmission region TA through the first anode connection electrode ACE1. As a result, the size of the transmission region TA may be reduced, and further, the light transmittance may be reduced.

[0143] In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, the first connection portion CN1 is formed not to protrude more than the first contact portion CT1 and the second contact portion CT2 in the transmission region TA, thereby minimizing the size of the region protruding from the non-transmission region NTA toward the transmission region TA. The transparent display panel 110 according to an exemplary embodiment of the present disclosure may minimize the reduction in light transmittance due to the first anode connection electrode ACE1.

[0144] The second anode connection electrode ACE2 may include a third contact portion CT3 and a second connection portion CN2. The third contact portion CT3 may be disposed to overlap with the driving transistor DT or the capacitor Cst. Specifically, the third contact portion CT3 may overlap with one of the source electrode SE and the drain electrode DE of the driving transistor DT or the first capacitor electrode CstE1 of the capacitor Cst.

[0145] For example, the third contact portion CT3 may be disposed to overlap with the source electrode SE or the drain electrode DE of the driving transistor DT, and may be electrically connected to the source electrode SE or the drain electrode DE of the driving transistor DT through the third contact hole CH3.

[0146] As another example, the third contact part CT3 can be arranged to overlap with the first capacitor electrode CstE1 of the capacitor Cst, and can be electrically connected to the first capacitor electrode CstE1 of the capacitor Cst through the third contact hole CH3. Since the first capacitor electrode CstE1 of the capacitor Cst extends from the source electrode SE or the drain electrode DE of the driving transistor DT, the third contact part CT3 can be electrically connected to the source electrode SE or the drain electrode DE of the driving transistor DT through the first capacitor electrode CstE1 of the capacitor Cst.

[0147] The second connection part CN2 can connect the third contact part CT3 to the first anode connection electrode ACE1. The second connection part CN2 can be connected to the third contact part CT3 at one end. The second connection part CN2 can extend from one end toward the transmissive area TA, and can be connected to the first connection part CN1 of the first anode connection electrode ACE1 at the other end. The second connection part CN2 and the first connection part CN1 can be arranged on the same layer. The second connection part CN2 of the second anode connection electrode ACE2 can protrude from one side of the first connection part CN1 of the first anode connection electrode ACE1 and extend to the third contact part CT3.

[0148] As described above, the first anode connection electrode ACE1 and the second anode connection electrode ACE2 can be located in the non-transmissive area NTA. A transmissive area TA can be provided between the first anode connection electrode ACE1 and the second anode connection electrode ACE2.

[0149] In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, when a defect occurs in at least one of the plurality of sub-pixels SP1, SP2, SP3, and SP4, at least a partial area of the anode connection electrode ACE can be cut to repair the defect. Specifically, in the transparent display panel 110 according to an exemplary embodiment of the present disclosure, particles or the like may penetrate into either the first anode electrode E11 or the second anode electrode E12 during the process, thereby possibly generating a dark spot. In this case, the transparent display panel 110 according to an exemplary embodiment of the present disclosure can be repaired by cutting at least a partial area of the anode connection electrode ACE.

[0150] As Figure 6 shown, the anode connection electrode ACE can include a first cutting area CTA1, a second cutting area CTA2, and a third cutting area CTA3.

[0151] Specifically, the first anode connection electrode ACE1 may be provided with a first cutting area CTA1 and a second cutting area CTA2 in the first connection part CN1. The first cutting area CTA1 may be provided between the intersection point of the first anode connection electrode ACE1 and the second anode connection electrode ACE2 and the first contact part CT1. The second cutting area CTA2 may be provided between the intersection point of the first anode connection electrode ACE1 and the second anode connection electrode ACE2 and the second contact part CT2.

[0152] In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, defects may occur in the area where the first anode electrode E11 is provided among the first anode electrode E11 and the second anode electrode E12. Particles and the like may flow into the first anode electrode E11 during this process, and thus a short circuit may occur between the first anode electrode E11 and the second electrode E2. In this case, the first connection part CN1 of the first anode connection electrode ACE1 may be laser cut through the first cutting area CTA1. As a result, the first anode electrode E11 may be electrically separated from the driving transistor DT and the second anode electrode E12. Even if the area where the first anode electrode E11 is provided becomes a dark spot, the area where the second anode electrode E12 is provided can still work normally to emit light.

[0153] In contrast, in the transparent display panel 110 according to an exemplary embodiment of the present disclosure, defects may occur in the area where the second anode electrode E12 is provided among the first anode electrode E11 and the second anode electrode E12. Particles and the like may flow into the second anode electrode E12 during this process, and thus a short circuit may occur between the second anode electrode E12 and the second electrode E2. In this case, the first connection part CN1 of the first anode connection electrode ACE1 may be laser cut through the second cutting area CTA2. As a result, the second anode electrode E12 may be electrically separated from the driving transistor DT and the first anode electrode E11. Even if the area where the second anode electrode E12 is provided becomes a dark spot, the area where the first anode electrode E11 is provided can still work normally to emit light.

[0154] Even if a defect occurs due to particles, the transparent display panel 110 according to an exemplary embodiment of the present disclosure can reduce the light loss rate due to the occurrence of the defect by short-circuiting only the corresponding anode electrodes among the plurality of divided anode electrodes E11 and E12 through laser cutting. When a defect occurs in the region where the first anode electrode E11 is provided, the first connection portion CN1 of the first anode connection electrode ACE1 is laser-cut through the first cutting region CTA1 to electrically isolate the first anode electrode E11 from the driving transistor DT and the second anode electrode E12; and when a defect occurs in the region where the second anode electrode E12 is provided, the first connection portion CN1 of the first anode connection electrode ACE1 is laser-cut through the second cutting region CTA2 to electrically isolate the second anode electrode E12 from the driving transistor DT and the first anode electrode E11, thereby reducing the light loss rate due to the occurrence of the defect.

[0155] In addition, in the transparent display panel 110 according to an exemplary embodiment of the present disclosure, as Figure 6 shown, a third cutting region CTA3 may be provided in the second anode connection electrode ACE2. The second anode connection electrode ACE2 may be provided with the third cutting region CTA3 in the second connection portion CN2. The second connection portion CN2 of the second anode connection electrode ACE2 may include a first region overlapping with the color filter CF and the black matrix BM and a second region not overlapping with the color filter CF and the black matrix BM. The second connection portion CN2 of the second anode connection electrode ACE2 may be provided with the third cutting region CTA3 in the second region.

[0156] In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, a circuit element such as the driving transistor DT may be defective. In this case, the second connection portion CN2 of the second anode connection electrode ACE2 may be laser-cut through the third cutting region CTA3. As a result, the driving transistor DT may be electrically isolated from the first anode electrode E11 and the second anode electrode E12.

[0157] In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, since the first anode electrode E11 and the second anode electrode E12 simultaneously become dark spots through a single laser cutting process, the repair process can be simplified. In addition, in the transparent display panel 110 according to an exemplary embodiment of the present disclosure, since the number of times of irradiating the laser can be reduced, damage to the elements provided in the region where the laser is irradiated can be minimized.

[0158] In addition, in the transparent display panel 110 according to an exemplary embodiment of the present disclosure, the anode connection electrode ACE may be formed on a layer provided between the driving transistor DT and the anode electrode E1. The anode connection electrode ACE may be provided on a layer different from the gate electrode GE, the source electrode SE, and the drain electrode DE of the driving transistor DT. The anode connection electrode ACE may be provided on the gate electrode GE, the source electrode SE, and the drain electrode DE of the driving transistor DT. In addition, the anode connection electrode ACE may be provided on a layer different from the anode electrode E1. The anode connection electrode ACE may be provided below the anode electrode E1, but is not limited thereto.

[0159] The anode connection electrode ACE may be provided between a plurality of insulating layers provided between the driving transistor DT and the anode electrode E1. For example, the anode connection electrode ACE may be provided between the first insulating layer 140 and the second insulating layer 150.

[0160] The anode connection electrode ACE may be formed of a material different from that of the gate electrode GE, the source electrode SE, and the drain electrode DE of the driving transistor DT. In addition, the anode connection electrode ACE may be formed of a material different from that of the anode electrode E1.

[0161] The anode connection electrode ACE may be made of a material having an oxidation degree lower than that of each of the gate electrode GE, the source electrode SE, and the drain electrode DE of the driving transistor DT. In other words, the oxidation degree of the material of the anode connection electrode ACE may be lower than the oxidation degree of the material of the gate electrode GE, lower than the oxidation degree of the source electrode material, and lower than the oxidation degree of the material of the drain electrode DE. For example, the anode connection electrode ACE may be formed of an alloy MoTi of molybdenum (Mo) and titanium (Ti), or may have a stacked structure of an alloy of molybdenum (Mo) and titanium (Ti) and ITO, but is not limited thereto.

[0162] The anode connection electrode ACE made of the above material may have the property of absorbing hydrogen particles. In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, the anode connection electrode ACE may absorb hydrogen generated therein, thereby preventing the light-emitting element ED from deteriorating due to hydrogen, maintaining high luminous efficiency even at low power, and reducing power consumption.

[0163] The anode connection electrode ACE may be formed thinner than the gate electrode GE, the source electrode SE, and the drain electrode DE of the driving transistor DT. Each of the gate electrode GE, the source electrode SE, and the drain electrode DE of the driving transistor DT should have a minimum thickness required or suitable for the operation reliability of the driving transistor DT. For example, each of the gate electrode GE, the source electrode SE, and the drain electrode DE of the driving transistor DT may be formed to have a thickness of, but is not limited thereto.

[0164] When the anode connection electrode ACE and the gate electrode GE, source electrode SE, or drain electrode DE of the driving transistor DT are formed of the same material on the same layer, the anode connection electrode ACE can be formed to have the same thickness as the gate electrode GE, source electrode SE, or drain electrode DE of the driving transistor DT. For example, the anode connection electrode ACE can also be formed to have a thickness, but is not limited thereto. Alternatively, the anode connection electrode ACE can be formed to have a thickness different from that of the gate electrode GE, source electrode SE, or drain electrode DE of the driving transistor DT.

[0165] In this case, since the anode connection electrode ACE has a thick thickness, it is very likely that one of the first cutting area CTA1, the second cutting area CTA2, and the third cutting area CTA3 is not completely cut in the cutting process using a laser. That is, the anode connection electrode ACE provided on the same layer as the gate electrode GE, source electrode SE, or drain electrode DE of the driving transistor DT has a low cutting success rate in the laser cutting process, so the defect rate of the product may increase.

[0166] In addition, in order to improve the cutting success rate of the anode connection electrode ACE, a high level of energy should be used during laser irradiation. For this purpose, the possibility of damaging the components near the cutting area increases. In addition, since the anode connection electrode ACE is provided adjacent to the anode electrode E1, the anode electrode E1 may be damaged.

[0167] Furthermore, the anode connection electrode ACE can include a plurality of cutting areas CTA1, CTA2, and CTA3. When a defect occurs in a specific sub-pixel, at least one of the plurality of cutting areas CTA1, CTA2, and CTA3 of the anode connection electrode ACE can be irradiated and cut with a laser beam. In some cases, two or more of the plurality of cutting areas CTA1, CTA2, and CTA3 of the anode connection electrode ACE can be irradiated and cut with a laser beam. For example, when a defect appears in the area where the first sub-pixel SP1 is provided, the first cutting area CTA1 of the anode connection electrode ACE can be irradiated with a laser beam and cut. However, since the anode connection electrode ACE provided on the same layer as the gate electrode GE, source electrode SE, or drain electrode DE of the driving transistor DT is thick, the cutting may fail. In this case, it is necessary to attempt a dark point for all corresponding sub-pixels by irradiating the third cutting area CTA3 with a laser.

[0168] At this time, when the gap distance between the first cutting area CTA1 and the third cutting area CTA3 is small and the energy level of the laser is high, as Figure 9As shown, the cathode electrode E2 and the encapsulation layer 180 disposed in the first cutting area CTA1 and the third cutting area CTA3 may be damaged due to two laser irradiations, and degradation may occur in the light-emitting element ED.

[0169] To prevent damage to the anode electrode E1, an anode connection electrode ACE may be provided such that the gap distance between the cutting area and the anode electrode E1 is greater than or equal to a predetermined distance. In addition, to prevent damage to the cathode electrode E2 and the encapsulation layer 180, it is necessary to ensure a sufficient gap distance between the plurality of cutting areas CTA1, CTA2, and CTA3. For this purpose, the area where the anode connection electrode ACE protrudes in the transmission area TA may increase, the area of the transmission area TA may decrease, and the light transmittance may decrease.

[0170] In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, the anode connection electrode ACE may be provided on a layer different from the gate electrode GE, the source electrode SE, or the drain electrode DE of the driving transistor DT. In this case, in the transparent display panel 110 according to an exemplary embodiment of the present disclosure, the anode connection electrode ACE is formed thinner than the gate electrode GE, the source electrode SE, or the drain electrode DE of the driving transistor DT, thereby improving the cutting success rate in the laser cutting process. For example, the anode connection electrode ACE may be formed to have a thickness, but is not limited thereto.

[0171] Since the anode connection electrode ACE has a thin thickness, it is possible to ensure that one of the first cutting area CTA1, the second cutting area CTA2, and the third cutting area CTA3 is completely cut in the cutting process using a laser. That is, the anode connection electrode ACE has a high cutting success rate, so the product defect rate can be reduced. The transparent display panel 110 according to an exemplary embodiment of the present disclosure can reduce the manufacturing process cost, shorten the manufacturing process time, and thus can reduce the production energy. In addition, the transparent display panel 110 according to an exemplary embodiment of the present disclosure can reduce the generation of greenhouse gases that may occur due to the manufacturing process, thereby achieving environmental, social, and governance (ESG).

[0172] In addition, even when a low level of energy is used during laser irradiation, the anode connection electrode ACE can be well cut. In the laser cutting process, elements near the cutting area are not damaged.

[0173] Since the anode connection electrode ACE is well cut even at a low level of energy, the gap distance between the cutting area and the anode electrode E1 can be set to the minimum distance. Specifically, each of the cutting areas CTA1 and CTA2 provided in the first connection portion CN1 of the first anode connection electrode ACE1 can be spaced apart from the black matrix BM by the minimum distance for laser irradiation. Moreover, even if the gap distance between the plurality of cutting areas CTA1, CTA2, and CTA3 of the anode connection electrode ACE is small, the cathode electrode E2 and the encapsulation layer 180 are not damaged. Therefore, the anode connection electrode ACE can protrude minimally in the transmission area TA, and the size reduction of the transmission area TA due to the first anode connection electrode ACE1 can be minimized. In addition, the reduction in light transmittance due to the first anode connection electrode ACE1 can be minimized.

[0174] In the anode connection electrode ACE, the first connection portion CN1 in which the first cutting area CTA1 and the second cutting area CTA2 are formed can protrude less in the transmission area TA than the first contact portion CT1 and the second contact portion CT2. For example, the boundary between the first connection portion CN1 and the transmission area TA can form a straight line on a vertical line with the boundary between the first contact portion CT1 and the transmission area TA and the boundary between the second contact portion CT2 and the transmission area TA. As a result, in the transparent display panel 110 according to the exemplary embodiment of the present disclosure, since the boundary between the non-transmission area NTA and the transmission area TA is close to a straight line, the haze can be reduced and the image readability can be improved.

[0175] Figure 10 is a plan view showing Figure 4 another example of the region C, Figure 11 is a cross-sectional view showing an example of III-III’ of Figure 10 and Figure 12 is a view showing an example of forming a contact hole in a region overlapping with the active layer.

[0176] Figure 10 and Figure 11 The transparent display panel 110 shown in Figures 5 to 9 differs from the transparent display panel 110 shown in Figures 5 to 9 only in the anode connection electrode ACE, and the remaining elements are substantially the same as those shown in

[0177] In the transparent display panel 110 according to an exemplary embodiment of the present disclosure, the anode electrode E1 can be connected to the driving transistor DT by using the anode connection electrode ACE. Specifically, the anode connection electrode ACE can include a first anode connection electrode ACE1 and a second anode connection electrode ACE2.

[0178] The first anode connection electrode ACE1 can be electrically connected to the first anode electrode E11 at one end through the first contact hole CH1, and can be electrically connected to the second anode electrode E12 at the other end through the second contact hole CH2. The first anode connection electrode ACE1 can include a first contact portion CT1, a second contact portion CT2, and a first connection portion CN1. The first contact portion CT1 can be connected to the first anode electrode E11 through the first contact hole CH1. The second contact portion CT2 can be connected to the second anode electrode E12 through the second contact hole CH2. The first connection portion CN1 can connect the first contact portion CT1 and the second contact portion CT2. The first connection portion CN1 can have one end connected to the first contact portion CT1 and the other end connected to the second contact portion CT2. The first connection portion CN1 can have a straight line between the first contact portion CT1 and the second contact portion CT2.

[0179] For the laser cutting process, the first anode connection electrode ACE1 can be spaced apart from the black matrix BM without overlapping. That is, the first anode connection electrode ACE1 can be disposed between the black matrix BM and the transmissive region TA.

[0180] The second anode connection electrode ACE2 can include a third contact portion CT3 and a second connection portion CN2. The third contact portion CT3 can be overlapped with the driving transistor DT or the capacitor Cst. Specifically, the third contact portion CT3 can overlap with one of the source electrode SE and the drain electrode DE of the driving transistor DT or the first capacitor electrode CstE1 of the capacitor Cst.

[0181] For example, the third contact portion CT3 can be disposed to overlap with the source electrode SE or the drain electrode DE of the driving transistor DT, and can be electrically connected to the source electrode SE or the drain electrode DE of the driving transistor DT through the third contact hole CH3.

[0182] As another example, the third contact portion CT3 can be disposed to overlap with the first capacitor electrode CstE1 of the capacitor Cst, and can be electrically connected to the first capacitor electrode CstE1 of the capacitor Cst through the third contact hole CH3. Since the first capacitor electrode CstE1 of the capacitor Cst extends from the source electrode SE or the drain electrode DE of the driving transistor DT, the third contact portion CT3 can be electrically connected to the source electrode SE or the drain electrode DE of the driving transistor DT through the first capacitor electrode CstE1 of the capacitor Cst. However, the present disclosure is not limited thereto.

[0183] The third contact portion CT3 of the second anode connection electrode ACE2 can be disposed between the active layer ACT of the driving transistor DT and the first capacitor electrode CstE1 of the capacitor Cst. That is to say, the third contact portion CT3 may not overlap with the active layer ACT of the driving transistor DT and the first capacitor electrode CstE1 of the capacitor Cst. In addition, the third contact hole CH3 passing through the first insulating layer 140 may not overlap with the active layer ACT of the driving transistor DT and the first capacitor electrode CstE1 of the capacitor Cst.

[0184] When the third contact hole CH3 passing through the first insulating layer 140 overlaps with the active layer ACT of the driving transistor DT or the first capacitor electrode CstE1 of the capacitor Cst, the active layer ACT of the driving transistor DT or the first capacitor electrode CstE1 of the capacitor Cst may be exposed by the third contact hole CH3. For this reason, the active layer ACT of the driving transistor DT or the first capacitor electrode CstE1 of the capacitor Cst may contact the third contact portion CT3 of the second anode connection electrode ACE2 through the third contact hole CH3.

[0185] More specifically, the third contact portion CT3 of the second anode connection electrode ACE2 may overlap with the first capacitor electrode CstE1 of the capacitor Cst disposed on the same layer as the active layer ACT of the driving transistor DT.

[0186] As Figure 12 shown, the gate insulating layer 130 and the drain electrode DE (or the source electrode SE) may be sequentially stacked on the first capacitor electrode CstE1 of the capacitor Cst. In some cases, before depositing the gate insulating layer 130, particles PT generated in the manufacturing process may flow into the first capacitor electrode CstE1 of the capacitor Cst. Thereafter, the gate insulating layer 130 and the drain electrode DE (or the source electrode SE) may be sequentially stacked on the particles PT on the first capacitor electrode CstE1 of the capacitor Cst. In this case, seams SM may be generated in the gate insulating layer 130 and the drain electrode DE (or the source electrode SE) due to the particles PT.

[0187] Next, a first insulating layer 140 may be formed on the drain electrode DE (or source electrode SE). Then, a photoresist pattern PR for exposing an area where a third contact hole CH3 is to be formed may be formed on the first insulating layer 140, and the first insulating layer 140 in an area not covered by the photoresist pattern PR may be removed using an etchant. In this case, the etchant may penetrate into an area of a seam SM generated by a particle PT. For this reason, the gate insulating layer 130 disposed under the drain electrode DE (or source electrode SE) and the first capacitor electrode CstE1 of the capacitor Cst may also be etched by the etchant. Although the drain electrode DE (or source electrode SE) is also torn off, a part of the first capacitor electrode CstE1 of the capacitor Cst may be exposed through the third contact hole CH3.

[0188] Then, an anode connection electrode ACE may be formed between the first insulating layers 140. In this case, the anode connection electrode ACE may be electrically connected to the drain electrode DE (or source electrode SE) of the driving transistor DT through the third contact hole CH3. In addition, the anode connection electrode ACE may also contact a part of the first capacitor electrode CstE1 of the capacitor Cst exposed from the third contact hole CH3, and thus may be electrically connected to the first capacitor electrode CstE1 of the capacitor Cst. The anode connection electrode ACE may be simultaneously connected to the drain electrode DE (or source electrode SE) of the driving transistor DT and the first capacitor electrode CstE1 of the capacitor Cst, and thus defects such as bright spots may occur.

[0189] In the transparent display panel 110 according to another exemplary embodiment of the present disclosure, the third contact hole CH3 may be arranged not to overlap with the active layer ACT of the driving transistor DT and the first capacitor electrode CstE1 of the capacitor Cst, so that electrodes other than the drain electrode DE (or source electrode SE) of the driving transistor DT may be prevented from being exposed through the third contact hole CH3.

[0190] In the transparent display panel 110 according to another exemplary embodiment of the present disclosure, the position of the third contact hole CH3 may be moved between the active layer ACT of the driving transistor DT and the first capacitor electrode CstE1 of the capacitor Cst without reducing the sizes of the active layer ACT of the driving transistor DT and the first capacitor electrode CstE1 of the capacitor Cst. Therefore, the transparent display panel 110 according to another exemplary embodiment of the present disclosure may prevent a short circuit failure from occurring between the anode connection electrode ACE and the active layer ACT of the driving transistor DT or the first capacitor electrode CstE1 of the capacitor Cst while maintaining the size of the capacitor Cst.

[0191] The second connection part CN2 can connect the third contact part CT3 to the first anode connection electrode ACE1. The second connection part CN2 can be connected to the third contact part CT3 at one end, extend along the direction of the transmission area TA, and then be connected to the first connection part CN1 of the first anode connection electrode ACE1 at the other end.

[0192] The exemplary embodiments of the present disclosure are briefly described as follows.

[0193] According to an exemplary embodiment of the present disclosure, a transparent display device includes: a first substrate including a transmission area for transmitting external light and a non-transmission area for not transmitting external light; a driving transistor located in the non-transmission area on the first substrate; an anode connection electrode located on the driving transistor; and a light-emitting element located on the anode connection electrode, the light-emitting element including an anode electrode, a light-emitting layer, and a cathode electrode; wherein the anode electrode includes a first anode electrode and a second anode electrode, and wherein the anode connection electrode is electrically connected to the driving transistor on one side, extends from the non-transmission area toward the transmission area, and is electrically connected to each of the first anode electrode and the second anode electrode on the other side.

[0194] According to an exemplary embodiment of the present disclosure, the anode connection electrode is made of a material having an oxidation degree lower than that of each of the gate electrode, source electrode, and drain electrode of the driving transistor.

[0195] According to an exemplary embodiment of the present disclosure, the anode connection electrode includes: a first anode connection electrode electrically connected to the first anode electrode through a first contact hole at one end and electrically connected to the second anode electrode through a second contact hole at the other end; and a second anode connection electrode protruding from one side of the first anode connection electrode, extending to the area where the driving transistor is provided, and electrically connected to the driving transistor through a third contact hole.

[0196] According to an exemplary embodiment of the present disclosure, a part of the transmission area is provided between the first anode connection electrode and the second anode connection electrode.

[0197] According to an exemplary embodiment of the present disclosure, the first anode connection electrode includes a first contact part overlapping with the first contact hole and connected to the first anode electrode through the first contact hole, a second contact part overlapping with the second contact hole and connected to the second anode electrode through the second contact hole, and a first connection part linearly connecting the first contact part and the second contact part.

[0198] According to an exemplary embodiment of the present disclosure, the width of the first connection portion in one direction is smaller than the width of each of the first contact portion and the second contact portion in the one direction.

[0199] According to an exemplary embodiment of the present disclosure, the first connection portion protrudes less than the first contact portion and the second contact portion in the transmission region.

[0200] According to an exemplary embodiment of the present disclosure, the boundary between the first connection portion and the transmission region, the boundary between the first contact portion and the transmission region, and the boundary between the second contact portion and the transmission region form a straight line on a vertical line.

[0201] According to an exemplary embodiment of the present disclosure, the first connection portion includes a first cutting region between the point where the first anode connection electrode and the second anode connection electrode intersect and the first contact portion, and a second cutting region between the point where the first anode connection electrode and the second anode connection electrode intersect and the second contact portion, and wherein, when a defect appears in the first anode electrode, the first cutting region is laser-cut, and when a defect appears in the second anode electrode, the second cutting region is laser-cut.

[0202] According to an exemplary embodiment of the present disclosure, the transparent display device further includes: a color filter located on the light-emitting element; and a black matrix located between the color filter and the transmission region, wherein the first connection portion of the first anode connection electrode is spaced apart from the black matrix.

[0203] According to an exemplary embodiment of the present disclosure, the second anode connection electrode includes a third contact portion overlapping with the third contact hole and connected to the driving transistor through the third contact hole, and a second connection portion connecting the third contact portion and the first connection portion of the first anode connection electrode, and wherein the second connection portion includes a first region overlapping with the color filter and the black matrix, and a second region not overlapping with the color filter and the black matrix.

[0204] According to an exemplary embodiment of the present disclosure, the second connection portion of the second anode connection electrode includes a third cutting region provided in the second region, and wherein, when a defect appears in the driving transistor, the third cutting region is laser-cut.

[0205] According to an exemplary embodiment of the present disclosure, the driving transistor includes an active layer, a gate electrode, a source electrode, and a drain electrode. Among them, the second anode connection electrode includes a third contact portion that overlaps with the third contact hole and is connected to the driving transistor through the third contact hole, and among them, the third contact portion of the second anode connection electrode does not overlap with the active layer of the driving transistor.

[0206] According to an exemplary embodiment of the present disclosure, the transparent display device further includes a capacitor. The capacitor includes a first capacitor electrode disposed on the same layer as the active layer of the driving transistor and a second capacitor electrode disposed on the same layer as the gate electrode of the driving transistor. Among them, the third contact portion of the second anode connection electrode does not overlap with the first capacitor electrode of the capacitor.

[0207] According to an exemplary embodiment of the present disclosure, the third contact portion of the second anode connection electrode is disposed between the active layer of the driving transistor and the first capacitor electrode of the capacitor.

[0208] According to an exemplary embodiment of the present disclosure, the driving transistor includes an active layer, a gate electrode, a source electrode, and a drain electrode, and among them, the thickness of the anode connection electrode is thinner than the thickness of each of the gate electrode, the source electrode, and the drain electrode of the driving transistor.

[0209] According to an exemplary embodiment of the present disclosure, the gate electrode, the source electrode, and the drain electrode are disposed on the same layer.

[0210] According to an exemplary embodiment of the present disclosure, the anode connection electrode is connected to one of the source electrode and the drain electrode of the driving transistor through a third contact hole.

[0211] According to an exemplary embodiment of the present disclosure, the anode connection electrode includes molybdenum and titanium.

[0212] According to an exemplary embodiment of the present disclosure, a transparent display device includes: a transmissive region that transmits external light; a non-transmissive region that is located between adjacent transmissive regions; a driving transistor that is disposed in the non-transmissive region, the driving transistor including an active layer, a gate electrode, a source electrode, and a drain electrode; an anode connection electrode that is disposed on the driving transistor; and a light-emitting element that is disposed on the anode connection electrode, the light-emitting element including an anode electrode, a light-emitting layer, and a cathode electrode; among them, the anode electrode includes a first anode electrode and a second anode electrode, and among them, the anode connection electrode electrically connects the first anode electrode and the second anode electrode to one of the source electrode and the drain electrode of the driving transistor.

[0213] According to an exemplary embodiment of the present disclosure, the anode connection electrode includes a first anode connection electrode and a second anode connection electrode, and a part of the transmission region is disposed between the first anode connection electrode and the second anode connection electrode.

[0214] According to an exemplary embodiment of the present disclosure, the anode connection electrode is made of a material having an oxidation degree lower than that of each of the gate electrode, the source electrode, and the drain electrode of the driving transistor.

[0215] According to an exemplary embodiment of the present disclosure, the thickness of the anode connection electrode is thinner than that of each of the gate electrode, the source electrode, and the drain electrode of the driving transistor.

[0216] According to an exemplary embodiment of the present disclosure, the anode connection electrode includes molybdenum and titanium.

[0217] According to an exemplary embodiment of the present disclosure, the gate electrode, the source electrode, and the drain electrode of the driving transistor are disposed on the same layer.

[0218] According to an exemplary embodiment of the present disclosure, the anode connection electrode includes a first contact portion connected to the first anode electrode through a first contact hole, a second contact portion connected to the second anode electrode through a second contact hole, and a connection portion linearly connecting the first contact portion and the second contact portion.

[0219] According to an exemplary embodiment of the present disclosure, the width of the connection portion in one direction is smaller than the width of each of the first contact portion and the second contact portion in the one direction.

[0220] According to an exemplary embodiment of the present disclosure, the anode connection electrode includes a third contact portion, and the third contact portion is connected to one of the source electrode and the drain electrode of the driving transistor through a third contact hole.

[0221] According to an exemplary embodiment of the present disclosure, the region where the third contact portion is provided is spaced apart from the region where the active layer of the driving transistor is provided.

[0222] According to an exemplary embodiment of the present disclosure, the transparent display device further includes a capacitor, and the capacitor includes a first capacitor electrode and a second capacitor electrode. The first capacitor electrode is disposed on the same layer as the active layer of the driving transistor, and the region where the third contact portion is provided is disposed between the region where the active layer of the driving transistor is provided and the region where the first capacitor electrode is provided.

[0223] According to the present disclosure, the following beneficial effects can be obtained:

[0224] In the present disclosure, the anode connection electrode can be disposed on a layer different from the gate electrode, source electrode, and drain electrode of the driving transistor, so that the thickness of the anode connection electrode can be formed thin. Therefore, the present disclosure can improve the cutting success rate of the anode connection electrode in the laser cutting process.

[0225] In addition, in the present disclosure, even when a low level of energy is used during laser irradiation, cutting can be performed well. Therefore, in the present disclosure, the gap distance between the cutting region provided in the first anode connection electrode and the light-emitting element can be reduced, and the gap distance between multiple cutting regions can also be reduced. Moreover, even if the gap distance between the cutting region provided in the first anode connection electrode and the light-emitting element or the gap distance between multiple cutting regions is reduced, the influence on the elements provided near the cutting region can be minimized.

[0226] Moreover, in the present disclosure, the product defect rate can be reduced, thereby reducing the manufacturing process cost, shortening the manufacturing process time, and reducing further production energy. In addition, the present disclosure can reduce the generation of greenhouse gases that may occur due to the manufacturing process, thereby achieving environmental, social, and governance (ESG).

[0227] In addition, in the present disclosure, the size of the transmission region reduced due to the anode connection electrode can be minimized. In addition, the present disclosure can minimize the reduction in light transmittance caused by the anode connection electrode.

[0228] In addition, since the boundary between the non-transmission region and the transmission region is close to a straight line, the haze can be reduced and the image readability can be improved.

[0229] In addition, when a defect occurs only in one of the first anode electrode and the second anode electrode, a partial region of the first anode connection electrode can be laser-cut to short-circuit only the anode electrode where the defect occurs. In such a present disclosure, the size of the light-emitting region that becomes a dark spot can be reduced, thereby minimizing the light loss rate due to the defect.

[0230] And, in the present disclosure, the second anode connection electrode connected to the driving transistor can be laser-cut so that the first anode electrode and the second anode electrode can be short-circuited simultaneously. In addition, the number of laser irradiations can be reduced, thereby preventing damage to the cathode electrode and the encapsulation layer due to multiple laser irradiations. In addition, deterioration of the light-emitting element can be prevented, thereby increasing the lifespan of the light-emitting element.

[0231] Further, in the present disclosure, the contact hole through which the source electrode or drain electrode of the driving transistor contacts the anode connection electrode may be set not to overlap with the active layer, thereby preventing other electrodes other than the source electrode or drain electrode of the driving transistor from being exposed through the contact hole. Further, the present disclosure can prevent a short circuit failure between the anode connection electrode and the active layer while maintaining the size of the capacitor.

[0232] It will be apparent to those skilled in the art that the present disclosure is not limited by the above exemplary embodiments and drawings, and various substitutions, modifications, and changes can be made to the present disclosure without departing from the spirit or scope of the present disclosure. Therefore, the scope of the present disclosure is defined by the appended claims, and all changes or modifications derived from the meaning, scope, and equivalent concepts of the claims are intended to fall within the scope of the present disclosure.

[0233] Cross - reference to related applications

[0234] This application claims the priority benefit of Korean Patent Application No. 10 - 2023 - 0192306, filed on December 27, 2023, the entire contents of which are hereby incorporated by reference herein for all purposes.

Claims

1. A transparent display device, comprising: a first substrate including a transmission area for transmitting external light and a non-transmission area for not transmitting external light; a driving transistor, the driving transistor being in the non-transmitting region on the first substrate; an anode connection electrode, the anode connection electrode being on the driving transistor; as well as a light emitting element, the light emitting element being on the anode connecting electrode, the light emitting element comprising an anode electrode, a light emitting layer and a cathode electrode, Wherein, the anode electrode comprises a first anode electrode and a second anode electrode, and The anode connection electrode is electrically connected to the driving transistor on one side, extends from the non-transmission area toward the transmission area, and is electrically connected to each of the first anode electrode and the second anode electrode on the other side.

2. The transparent display device according to claim 1, wherein: The anode connection electrode is made of a material having an oxidation degree lower than that of each of the gate electrode, the source electrode, and the drain electrode of the driving transistor.

3. The transparent display device according to claim 1, wherein: The anode connection electrode comprises: a first anode connection electrode, the first anode connection electrode being electrically connected to the first anode electrode through a first contact hole at one end and being electrically connected to the second anode electrode through a second contact hole at the other end; and A second anode connection electrode protrudes from one side of the first anode connection electrode, extends to a region where the driving transistor is disposed, and is electrically connected to the driving transistor through a third contact hole.

4. The transparent display device according to claim 3, wherein: A portion of the transmission region is disposed between the first anode connection electrode and the second anode connection electrode.

5. The transparent display device according to claim 3, wherein: The first anode connection electrode includes a first contact portion overlapping with the first contact hole and connected to the first anode electrode through the first contact hole, a second contact portion overlapping with the second contact hole and connected to the second anode electrode through the second contact hole, and a first connection portion connecting the first contact portion and the second contact portion in a straight line.

6. The transparent display device according to claim 5, wherein: A width of the first connection portion in one direction is smaller than a width of each of the first contact portion and the second contact portion in the one direction.

7. The transparent display device according to claim 5, wherein: The first connection portion protrudes less than the first contact portion and the second contact portion in the transmission region.

8. The transparent display device according to claim 5, wherein: A boundary between the first connection portion and the transmission area, a boundary between the first contact portion and the transmission area, and a boundary between the second contact portion and the transmission area form a straight line on a vertical line.

9. The transparent display device according to claim 5, wherein: The first connection portion includes a first cutting region between a point where the first anode connection electrode and the second anode connection electrode intersect and the first contact portion, and a second cutting region between a point where the first anode connection electrode and the second anode connection electrode intersect and the second contact portion, and The first cutting region is configured to be cut using a laser when a defect occurs in the first anode electrode, and the second cutting region is configured to be cut using a laser when a defect occurs in the second anode electrode.

10. The transparent display device according to claim 5, further comprising: a color filter, the color filter being on the light emitting element; as well as a black matrix, the black matrix being between the color filter and the transmission area, Wherein, the first connection portion of the first anode connection electrode is spaced apart from the black matrix.

11. The transparent display device according to claim 10, wherein: The second anode connection electrode includes a third contact portion overlapping the third contact hole and connected to the driving transistor through the third contact hole, and a second connection portion connecting the third contact portion and the first connection portion of the first anode connection electrode, and The second connection portion includes a first region overlapping with the color filter and the black matrix, and a second region not overlapping with the color filter and the black matrix.

12. The transparent display device according to claim 11, wherein: The second connection portion of the second anode connection electrode includes a third cutting region disposed in the second region, and When a defect occurs in the driving transistor, the third cutting area is cut using laser.

13. The transparent display device according to claim 3, wherein: The driving transistor includes an active layer, a gate electrode, a source electrode and a drain electrode, The second anode connection electrode includes a third contact portion overlapping the third contact hole and connected to the driving transistor through the third contact hole, and Wherein, the third contact portion of the second anode connection electrode does not overlap with the active layer of the driving transistor.

14. The transparent display device according to claim 13, further comprising a capacitor, the capacitor comprising a first capacitor electrode disposed on the same layer as the active layer of the driving transistor and a second capacitor electrode disposed on the same layer as the gate electrode of the driving transistor, in, The third contact portion of the second anode connection electrode does not overlap the first capacitor electrode of the capacitor.

15. The transparent display device according to claim 14, wherein: The third contact portion of the second anode connection electrode is disposed between the active layer of the driving transistor and the first capacitor electrode of the capacitor.

16. The transparent display device according to claim 1, wherein: The driving transistor includes an active layer, a gate electrode, a source electrode and a drain electrode, and The anode connection electrode has a thickness thinner than a thickness of each of the gate electrode, the source electrode, and the drain electrode of the driving transistor.

17. The transparent display device according to claim 16, wherein: The gate electrode, the source electrode, and the drain electrode are disposed on the same layer.

18. The transparent display device according to claim 16, wherein: The anode connection electrode is connected to one of the source electrode and the drain electrode of the driving transistor through a third contact hole.

19. The transparent display device according to claim 1, wherein: The anode connection electrode includes molybdenum and titanium.

20. A transparent display device, comprising: a plurality of transmission areas, the plurality of transmission areas transmitting external light; a non-transmission region, wherein the non-transmission region is between adjacent transmission regions among the plurality of transmission regions; a driving transistor, the driving transistor being in the non-transmission region, the driving transistor comprising an active layer, a gate electrode, a source electrode, and a drain electrode; an anode connection electrode, the anode connection electrode being on the driving transistor; as well as A light emitting element, the light emitting element being on the anode connecting electrode, the light emitting element comprising an anode electrode, a light emitting layer and a cathode electrode; Wherein, the anode electrode comprises a first anode electrode and a second anode electrode, and The anode connection electrode electrically connects the first anode electrode and the second anode electrode to one of the source electrode and the drain electrode of the driving transistor.

21. The transparent display device according to claim 20, in, The anode connection electrode includes a first anode connection electrode and a second anode connection electrode, and Part of the plurality of transmission regions is located between the first anode connection electrode and the second anode connection electrode.

22. The transparent display device according to claim 20, wherein: The anode connection electrode is made of a material having an oxidation degree lower than that of each of the gate electrode, the source electrode, and the drain electrode of the driving transistor.

23. The transparent display device according to claim 20, wherein: The thickness of the anode connection electrode is smaller than the thickness of each of the gate electrode, the source electrode, and the drain electrode of the driving transistor.

24. The transparent display device according to claim 20, wherein: The anode connection electrode includes molybdenum and titanium.

25. The transparent display device according to claim 20, wherein: The gate electrode, the source electrode, and the drain electrode of the driving transistor are disposed on the same layer.

26. The transparent display device according to claim 20, wherein: The anode connection electrode includes a first contact portion connected to the first anode electrode through a first contact hole, a second contact portion connected to the second anode electrode through a second contact hole, and a connection portion connecting the first contact portion and the second contact portion in a straight line.

27. The transparent display device according to claim 26, wherein: A width of the connection portion in one direction is smaller than a width of each of the first contact portion and the second contact portion in the one direction.

28. The transparent display device according to claim 20, wherein: The anode connection electrode includes a third contact portion connected to one of the source electrode and the drain electrode of the driving transistor through a third contact hole.

29. The transparent display device according to claim 28, wherein: A region where the third contact portion is disposed is spaced apart from a region where the active layer of the driving transistor is disposed.

30. The transparent display device according to claim 28, further comprising a capacitor, wherein the capacitor comprises a first capacitor electrode and a second capacitor electrode, in, The first capacitor electrode is disposed on the same layer as the active layer of the driving transistor, and The region where the third contact portion is provided is provided between a region where the active layer of the driving transistor is provided and a region where the first capacitor electrode is provided.

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