Electronic device

Abstract

An electronic device includes a circuit substrate, a barrier layer, a light receiving layer, a light emitting layer, and a first light shielding pattern. The blocking layer is arranged on the circuit substrate and comprises a first opening, a second opening and a blocking wall, and the blocking wall is located between the first opening and the second opening. The light receiving layer is disposed in the first opening, and the light emitting layer is disposed in the second opening. The first shading pattern is arranged on the barrier wall. In a cross-sectional view of the electronic device, the first light shielding pattern has a first width at a first height and a second width at a second height, the second height is higher than the first height, and the first width is different from the second width.

Description

Technical Field

[0001] The present invention relates to an electronic device, and more particularly to an electronic device having a light receiving layer and a light emitting layer. Background Art

[0002] With the increasing progress of technology, electronic devices having both light sensing and display functions have been developed. However, in existing electronic devices, the light generated by the light emitting element needs to pass through multiple film layers before reaching the object to be measured, so that the stray light that does not hit the object to be measured is easily reflected into the photosensor, resulting in an excessively high noise ratio in the received optical signal, thereby reducing the signal-to-noise ratio (SNR). As a result, it is easy to cause inaccurate signal judgment, such as misjudgment of fingerprint images. Summary of the Invention

[0003] An object of the present invention is to provide an electronic device.

[0004] The present invention provides an electronic device, which includes a circuit board, a barrier layer, a light receiving layer, a light emitting layer, and a first light shielding pattern. The barrier layer is disposed on the circuit board and includes a first opening, a second opening, and a barrier wall, and the barrier wall is located between the first opening and the second opening. The light receiving layer is disposed in the first opening, and the light emitting layer is disposed in the second opening. The first light shielding pattern is disposed on the barrier wall. In a cross-sectional view of the electronic device, the first light shielding pattern has a first width at a first height and a second width at a second height, the second height is higher than the first height, and the first width is different from the second width. Description of the Drawings

[0005] Figure 1 Shown is a cross-sectional schematic view of an electronic device according to a first embodiment of the present invention.

[0006] Figure 2 Shown is a cross-sectional schematic view of an electronic device according to a first variant embodiment of the first embodiment of the present invention.

[0007] Figure 3 Shown is a cross-sectional schematic view of an electronic device according to a second variant embodiment of the first embodiment of the present invention.

[0008] Figure 4 Shown is a cross-sectional schematic view of an electronic device according to a third variant embodiment of the first embodiment of the present invention.

[0009] Figure 5 Shown is a cross-sectional schematic view of an electronic device according to a second embodiment of the present invention.

[0010] Figure 6 Shown is a top view schematic view of an electronic device according to some embodiments of the present invention.

[0011] Figure 7 The cross-sectional schematic diagram of the electronic device according to the first variant embodiment of the second embodiment of the present invention is shown.

[0012] Figure 8 The top view schematic diagram of the electronic device according to some embodiments of the present invention is shown.

[0013] Figure 9 The cross-sectional schematic diagram of the electronic device according to the second variant embodiment of the second embodiment of the present invention is shown.

[0014] Figure 10 The top view schematic diagram of the electronic device according to the third embodiment of the present invention is shown.

[0015] Figure 11 The cross-sectional schematic diagram of the electronic device according to the fourth embodiment of the present invention is shown.

[0016] Figure 12 The cross-sectional schematic diagram of the electronic device according to the first variant embodiment of the fourth embodiment of the present invention is shown.

[0017] Figure 13 The cross-sectional schematic diagram of the electronic device according to the second variant embodiment of the fourth embodiment of the present invention is shown.

[0018] Figure 14 The cross-sectional schematic diagram of the electronic device according to the fifth embodiment of the present invention is shown.

[0019] Figure 15 The cross-sectional schematic diagram of the electronic device according to the sixth embodiment of the present invention is shown.

[0020] Figure 16 The cross-sectional schematic diagram of the electronic device according to a variant embodiment of the sixth embodiment of the present invention is shown.

[0021] Figure 17 The cross-sectional schematic diagram of the electronic device according to the seventh embodiment of the present invention is shown.

[0022] Description of reference numerals: 12 - circuit board; 12a - substrate; 12b - circuit layer; 12T, 20T - upper surface; 14 - barrier layer; 14a - barrier wall; 16 - light receiving layer; 18 - light emitting layer; 201 - first sub-layer; 202 - second sub-layer; 20P - light shielding wall; 14S, 20S, 26S - side wall; 22 - encapsulation layer; 22a, 22c - inorganic material layer; 24 - sensing layer; 26 - black matrix; 28 - color filter; 281 - first color filter; 282 - second color filter; 283 - third color filter; 284 - fourth color filter; 285 - fifth color filter; 1, 1a, 1b, 1c, 2, 2a, 2b, 3, 4, 4a, 4b, 5, 6, 6a, 7 - electronic device; 30 - protective layer; 32 - covering layer; 34 - spacer; 36 - planarization layer; 42 - bonding layer; 20, 38, 40, 44, 46 - light shielding pattern; 14B, 20B, 46B - lower surface; 22b, 50 - organic material layer; 48, 52 - collimation pattern; 54 - guiding structure; BP - light shielding portion; CL - conductor layer; CP1, CP2 - connection portion; D1 - first direction; D2 - second direction; E1 - first electrode; E2, E4, E5 - electrode; E3 - third electrode; H1 - first height; H2 - second height; IN1, IN2 - insulating layer; L1, L2 - light ray; La, Lb - sub-layer; LE - light emitting element; LE1 - first light emitting element; LE2 - second light emitting element; LE3 - third light emitting element; LE4 - fourth light emitting element; M1, M2 - metal layer; OB - object to be measured; OP1, OP2, OP3, OP4, OP5, OP6, OP7, OP8, OP9, OP10, OP11 - opening; OP51 - sub-opening; P1, P2, P3, P4, P5 - part; R1, R2 - region; S1, S2 - spacing; SE - light sensing element; SP - spacer portion; T1, T2, T3, T4 - thickness; TD - top view direction; TH1, TH2, TH3 - through hole; W1 - first width; W2 - second width; W3, W4, W5, W6, W7, W8, W11 - width; W9, W10 - minimum width; θ2, θ1, θ3 - included angle. Detailed implementation manners

[0023] The content of the present invention will be described in detail below in combination with specific embodiments and drawings. And in order to make the content of the present invention clearer and easier to understand, the following drawings may be simplified schematic diagrams, and the elements therein may not be drawn to scale. Moreover, the number and size of each element in the drawings are only for illustration and are not used to limit the scope of the present invention.

[0024] Throughout the specification of the present invention and in the appended claims, certain terms will be used to refer to specific elements. Those of ordinary skill in the art should understand that electronic device manufacturers may use different names to refer to the same element, and it is not the intention herein to distinguish between elements that have the same function but different names. In the following specification and claims, terms such as "comprising" and "including" are open-ended terms and should therefore be construed to mean "including but not limited to...".

[0025] When ordinal numbers such as "first", "second", etc. are used in the specification and claims of the present invention to modify elements of the claims, they do not in themselves imply or represent that there is any previous ordinal number for the claimed element, nor do they represent the order between one claimed element and another claimed element, or the order in the manufacturing method. The use of the ordinal numbers is only to clearly distinguish one claimed element having a certain name from another claimed element having the same name.

[0026] Directional terms mentioned in the following embodiments, such as: up, down, left, right, front or back, etc., are only with reference to the directions in the drawings. Therefore, the directional terms used are for illustration and not for limiting the present invention.

[0027] In addition, when an element or a film layer is said to be on or above another element or another film layer, it should be understood that the said element or film layer is directly on the other element or another film layer, or there are other elements or film layers (not directly) between the two. Conversely, when an element or a film layer is said to be "directly" on another element or film layer, it should be understood that there are no intervening elements or film layers between the two. When an element or a film layer is said to be connected to another element or another film layer, it should be understood that the said element or film layer is directly connected to the other element or film layer, or the said element or film layer is connected to the other element or film layer through another element or film layer (not directly). Conversely, when an element or a film layer is said to be "directly connected to" another element or film layer, it should be understood that there is no other intervening element or film layer between the two.

[0028] In the present invention, terms such as "about", "equal to", "the same", "substantially" or "substantially" generally represent a range within 20%, 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value. The given quantity is an approximate quantity, that is, even without specifically stating "about", "equal to", "the same", "substantially" or "substantially", the meaning of "about", "equal to", "the same", "substantially" or "substantially" can still be implied.

[0029] It should be understood that, without departing from the spirit of the present invention, the features in multiple different embodiments can be replaced, recombined, and mixed to complete other embodiments. As long as the features between the embodiments do not violate the spirit of the invention or conflict with each other, they can be arbitrarily mixed and used.

[0030] In the present invention, the measurement methods for length, thickness, width, height, distance, and area can be obtained by using an optical microscope (OM), an electron microscope (such as a scanning electron microscope (SEM)), or other methods, but are not limited thereto.

[0031] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the technical field to which the present invention pertains. It can be understood that these terms, such as those defined in a commonly used dictionary, should be interpreted as having a meaning consistent with the relevant technology and the background or context of the present invention, and should not be interpreted in an idealized or overly formal manner, unless specifically defined in the embodiments of the present invention.

[0032] The electronic device of the present invention may, for example, include a display device, a sensing device, a touch device, a light-emitting device, an antenna device, a splicing device, other suitable electronic devices, or a combination of the above, but is not limited thereto. The electronic device may be an inflexible, bendable, stretchable, foldable, rollable, or flexible electronic device, but is not limited thereto. The display device may, for example, be applied to a laptop computer, a public display, a splicing display, a vehicle display, a touch display, a television, a monitor, a smartphone, a tablet computer, a light source module, a lighting device, or an electronic device applied to the above products, but is not limited thereto. The sensing device may, for example, be a sensing device for detecting capacitance change, light, heat energy, or ultrasonic waves, but is not limited thereto. The sensing device may, for example, include a biosensor, a touch sensor, a fingerprint sensor, other suitable sensors, or a combination of the above types of sensors. The display device may, for example, include light-emitting diodes, fluorescent materials, phosphor materials, other suitable display media, or a combination of the foregoing, but is not limited thereto. The light-emitting diodes may, for example, include organic light-emitting diodes (OLEDs), mini light-emitting diodes (mini LEDs), micro light-emitting diodes (micro LEDs), or quantum dot light-emitting diodes (quantum dot, QD, which may be, for example, QLEDs, QDLEDs), or other suitable materials, or any permutation and combination of the above materials, but is not limited thereto. The antenna device may, for example, be a liquid crystal antenna or other types of antenna, but is not limited thereto. The splicing device may, for example, include a splicing display device or a splicing antenna device, but is not limited thereto. In addition, the shape of the electronic device may, for example, be rectangular, circular, polygonal, a shape with curved edges, a curved surface, or other suitable shapes. The electronic device may have peripheral systems such as a drive system, a control system, a light source system, a rack system, etc. The electronic device may include an electronic unit, where the electronic unit may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, sensors, etc. It should be noted that the electronic device of the present invention may be various combinations of the above devices, but is not limited thereto. The electronic device in the following text and the drawings is described in the form of a display device, but the present invention is not limited thereto.

[0033] Figure 1 The cross-sectional schematic diagram of the electronic device according to the first embodiment of the present invention is shown. As Figure 1As shown, the electronic device 1 includes a circuit board 12, a barrier layer 14, a light receiving layer 16, a light emitting layer 18, and a light shielding pattern 20. The barrier layer 14 is disposed on the circuit board 12 and includes an opening OP1, an opening OP2, and a barrier wall 14a, where the barrier wall 14a is located between the opening OP1 and the opening OP2. Moreover, the light receiving layer 16 is disposed in the opening OP1, the light emitting layer 18 is disposed in the opening OP2, and the light shielding pattern 20 is disposed on the barrier wall 14a. It should be noted that since the light shielding pattern 20 is disposed on the barrier wall 14a located between the light receiving layer 16 and the light emitting layer 18, the light L1 generated by the light emitting layer 18 can be blocked by the light shielding pattern 20, and the light L1 of the light emitting layer 18 can be reduced from entering the light receiving layer 16 without hitting the object to be measured OB, so as to improve the signal-to-noise ratio of the optical signal received by the light receiving layer 16. In the present invention, the light that is generated by the light emitting layer 18 and shoots toward the light receiving layer 16 without hitting the object to be measured OB can be referred to as stray light. The object to be measured OB can be, for example, a fingerprint or other suitable biometric feature.

[0034] Furthermore, in the cross-sectional view of the electronic device 1, the light shielding pattern 20 has a first width W1 at a first height H1 and a second width W2 at a second height H2, where the second height H2 is higher than the first height H1, and the first width W1 is different from the second width W2. In Figure 1 the embodiment, the second width W2 can be greater than the first width W1. In this case, as shown in the enlarged view of the region R1 in Figure 1 , the angle θ1 between the side wall 20S of the light shielding pattern 20 and the lower surface 20B of the light shielding pattern 20 facing the barrier wall 14a can be greater than 90 degrees. Therefore, when the light L2 shoots toward the side wall 20S of the light shielding pattern 20 from above the light shielding pattern 20 at a large incident angle, the light L2 can be reflected downward by the light shielding pattern 20 and then can enter the light receiving layer 16. Thus, it can be seen that by designing the first width W1 to be smaller than the second width W2, it can help increase the incident angle range of the light L2 received by the light receiving layer 16, thereby improving the intensity of the received optical signal. For example, when the electronic device 1 has a high resolution, the area of the opening OP1 will be reduced, making it difficult for light to be received by the light receiving layer 16. Through the above design, it can help collimate the light to improve the intensity of the optical signal received by the light receiving layer 16. Here, the "incident angle" can be, for example, the angle between the traveling direction of the light and the top view direction TD of the electronic device 1.

[0035] The light-shielding pattern 20 may include a light-shielding material, such as, including but not limited to, colored organic materials and / or inorganic materials, metals, transparent materials coated with light-impermeable materials, or other suitable light-shielding materials. The colored organic materials and / or inorganic materials may include, for example, white, gray, black, or other suitable colors. The organic materials may include, for example, photoresist materials, acrylic-based materials, silicon-based materials, epoxy-based materials, other suitable organic materials, or combinations thereof, but not limited thereto. The acrylic-based materials may be, for example, polymethyl methacrylate (PMMA), polyimide (PI), or other suitable materials, or combinations thereof.

[0036] As Figure 1 shown, the circuit substrate 12 may include a substrate 12a and a circuit layer 12b, where the circuit layer 12b may be disposed on the substrate 12a. The substrate 12a may include, for example, a rigid substrate or a flexible substrate. The rigid substrate may include, for example, glass, ceramic, quartz, sapphire, or other suitable materials, but not limited thereto. The flexible substrate may include, for example, PI, polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), or polyarylate (PAR), other suitable materials, or combinations thereof, but not limited thereto. In some embodiments, the substrate 12a may be, for example, a single-layer structure or a multi-layer structure. In some embodiments, when the substrate 12a includes a flexible substrate, the substrate 12a may further selectively include a buffer layer disposed between the flexible substrate and the circuit layer 12b to reduce the influence of moisture and / or oxygen on the circuit layer 12b, the light-receiving layer 16, and / or the light-emitting layer 18. The circuit layer 12b may include, for example, signal lines, insulating layers, active components, and / or passive components. The active components may include, for example, thin-film transistors or other suitable transistors, but not limited thereto. The signal lines may include, for example, data lines, scan lines, common lines, or other required signal lines.

[0037] In the present invention, the height may be based on the upper surface 12T of the substrate 12a as a reference plane with a height of zero. For example, the first height H1 may be the height of the bottom (e.g., the lower surface 20B) of the light-shielding pattern 20 relative to the upper surface 12T of the substrate 12a, that is, the distance between the bottom of the light-shielding pattern 20 and the upper surface 12T of the substrate 12a. The second height H2 may be the height of the top (e.g., the upper surface 20T) of the light-shielding pattern 20 relative to the upper surface 12T of the substrate 12a, that is, the distance between the top of the light-shielding pattern 20 and the upper surface 12T of the substrate 12a. The reference plane of the present invention is not limited to the upper surface 12T of the substrate 12a. In addition, the top view direction TD of the present invention may be, for example, parallel to the normal direction of the upper surface 12T of the substrate 12a. The top view of the electronic device in the following text may refer to the electronic device viewed along the top view direction TD.

[0038] Specifically, as Figure 1 shown, the electronic device 1 may include a light-sensing element SE and a light-emitting element LE, where the light-emitting element LE can be used to generate light, and the light-sensing element SE can be used to detect the intensity of the optical signal. The circuit layer 12b can be used to control whether the light-emitting element LE generates light or the intensity of the generated light and / or control the reading of the optical signal received by the light-sensing element SE. The light-sensing element SE may include a first electrode E1, a light-receiving layer 16, and a second electrode. The light-emitting element LE may include a third electrode E3, a light-emitting layer 18, and a fourth electrode. In Figure 1 the embodiment, the first electrode E1 and the third electrode E3 may be disposed on the circuit layer 12b and electrically connected to the circuit layer 12b respectively, and the first electrode E1 and the third electrode E3 may be separated from each other and electrically insulated. The first electrode E1 and the third electrode E3 may, for example, include the same material or be formed by the same conductor layer CL. The barrier layer 14 is disposed on the first electrode E1 and the third electrode E3, where the openings OP1 and OP2 of the barrier layer 14 may overlap the first electrode E1 and the third electrode E3 respectively, so that the first electrode E1 and the third electrode E3 can be exposed by the openings OP1 and OP2 respectively. And, the light-receiving layer 16 may be disposed on the first electrode E1, and the second electrode may be disposed on the light-receiving layer 16, so that the light-receiving layer 16 can be electrically connected between the first electrode E1 and the second electrode. The light-emitting layer 18 may be disposed on the third electrode E3, and the fourth electrode may be disposed on the light-emitting layer 18, so that the light-emitting layer 18 can be electrically connected between the third electrode E3 and the fourth electrode. In the present invention, one element "overlapping" another element means that the element overlaps the other element in the normal direction of the upper surface 12T of the substrate 12a.

[0039] In Figure 1In an embodiment, the second electrode and the fourth electrode may be formed by the same electrode E2. In other words, the electrode E2 may be disposed on both the light receiving layer 16 and the light emitting layer 18, and electrically connected to the light receiving layer 16 and the light emitting layer 18, such that a part of the electrode E2 corresponding to the light receiving layer 16 may serve as the second electrode of the photosensing element SE, and a part of the electrode E2 corresponding to the light emitting layer 18 may serve as the fourth electrode of the light emitting element LE. In an embodiment, the first electrode E1 may serve as the anode of the photosensing element SE, the third electrode E3 may serve as the anode of the light emitting element LE, and the electrode E2 may serve as the cathode of the photosensing element SE and the cathode of the light emitting element LE at the same time, and is used to provide a common voltage, but is not limited thereto. In some embodiments, the electrode E2 may also be adjusted to serve as the anode of the photosensing element SE and the anode of the light emitting element LE according to actual circuit requirements, but is not limited thereto. The electrode E2 may include, for example, a metal, a transparent conductive material, or other suitable materials. In Figure 1 an embodiment, the electrode E2 may further extend onto the barrier layer 14 and be disposed between the barrier wall 14a and the light shielding pattern 20, but is not limited thereto.

[0040] In Figure 1 an embodiment, the light receiving layer 16 of the photosensing element SE may include an organic optoelectronic conversion material layer, but is not limited thereto. The organic optoelectronic conversion material layer may include, for example, a polymer-based material or other suitable materials. In some embodiments, the light receiving layer 16 may also include a PIN semiconductor layer of an inorganic photodiode or other optoelectronic conversion materials capable of converting light energy into electrical energy. Alternatively, the light receiving layer 16 may include an organic photodiode, an inorganic photodiode, or other types of light receiving wafers.

[0041] In Figure 1In an embodiment, the light-emitting layer 18 of the light-emitting element LE may include an organic light-emitting material, such that the light-emitting element LE may include an organic light-emitting diode (OLED), but is not limited thereto. In some embodiments, the light-emitting layer 18 may include an organic light-emitting diode, an inorganic light-emitting diode, or other suitable materials. For example, the light-emitting layer 18 may also include a mini-LED or micro-LED, quantum dots (QDs) material, quantum dot light-emitting diode (QLED, QDLED), nanowire light-emitting diode, bar-type LED, fluorescent material, phosphor material, other suitable materials, or a combination of the above, but is not limited thereto. In some embodiments, the light-emitting layer 18 may include a vertical-type light-emitting diode disposed between the third electrode E3 and the electrode E2. In this case, the electronic device may further selectively include a bonding layer (e.g., Figure 4 the bonding layer 42 shown) disposed between the light-emitting element LE and the barrier layer 14 and configured to fix the light-emitting element LE in the corresponding opening OP2. The bonding layer may, for example, surround the light-emitting element LE. The type of light-emitting diode of the present invention is not limited to the above.

[0042] As Figure 1As shown, the electronic device 1 may include a plurality of light-emitting elements LE. In other words, the barrier layer 14 may have a plurality of openings OP2 and a plurality of barrier walls 14a, wherein the light-emitting layers 18 of the light-emitting elements LE may be respectively disposed in the corresponding openings OP2, and the barrier walls 14a may be disposed between the light-receiving layer 16 and the light-emitting layer 18 and between the light-emitting layers 18. When the electronic device 1 is a display device, the barrier layer 14 may be, for example, a pixel defining layer, and a single opening OP2 may define a sub-pixel or a pixel area, but is not limited thereto. In this case, the light-emitting element LE may be a sub-pixel or a pixel of the display device, but is not limited thereto. For example, the light-emitting element LE may include a first light-emitting element LE1, a second light-emitting element LE2, and a third light-emitting element LE3, which are respectively used to generate light rays of a first color, a second color, and a third color, and the first color, the second color, and the third color may be different from each other. The first color, the second color, and the third color may be, for example, red, green, and blue or other suitable colors. At least one first light-emitting element LE1, at least one second light-emitting element LE2, and at least one third light-emitting element LE3 may form a pixel, such that a plurality of first light-emitting elements LE1, a plurality of second light-emitting elements LE2, and a plurality of third light-emitting elements LE3 may display an image, but is not limited thereto. At least one of the first light-emitting element LE1, the second light-emitting element LE2, and the third light-emitting element LE3 may be a detection light source of the light-sensing element SE. For example, the second light-emitting element LE2 adjacent to the light-sensing element SE may be a detection light source of the light-sensing element SE, but is not limited thereto. In some embodiments, the light-emitting element LE may further include a fourth light-emitting element, which is used as a detection light source of the light-sensing element SE and is not used for displaying an image, such as Figure 10 as shown.

[0043] It should be noted that the electronic device 1 can operate in a display mode or a sensing mode. When the electronic device 1 is in the display mode, the first light-emitting element LE1, the second light-emitting element LE2, and the third light-emitting element LE3 may generate light rays to display an image. When the electronic device 1 is in the sensing mode, one of the first light-emitting element LE1, the second light-emitting element LE2, and the third light-emitting element LE3 may generate a light ray L1. Through the above operation mode, since the light-shielding pattern 20 is disposed at least between the light-receiving layer 16 and the light-emitting layer 18 of the light-emitting element LE (such as the second light-emitting element LE2) serving as the detection light source in the top view of the electronic device 1, when the electronic device 1 is in the sensing mode, the light-shielding pattern 20 can block the light of the second light-emitting element LE2 from directly irradiating the light-sensing element SE, thereby improving the signal-to-noise ratio of the optical signal. In Figure 1In an embodiment, the light-shielding pattern 20 may surround the light-receiving layer 16 in a top view of the electronic device 1, for example, but is not limited thereto. In some embodiments, the light-shielding pattern 20 may include a plurality of light-shielding walls arranged to surround the light-receiving layer 16, such as Figure 6 shown by the light-shielding wall 20P. The structure of the light-shielding pattern 20 in the top view of the electronic device 1 may also be, for example, the same as that of Figure 6 the light-shielding pattern 20 shown, but is not limited thereto. In some embodiments, the arrangement of the first light-emitting element LE1, the second light-emitting element LE2, the third light-emitting element LE3, and the light-receiving layer 16 of the light-sensing element SE may be, for example, Figure 6 shown, but is not limited thereto.

[0044] In some embodiments, the electronic device 1 may include a plurality of light-sensing elements SE for detecting an image, such as a fingerprint image. By blocking stray light with the light-shielding pattern 20, the recognition accuracy of the fingerprint image can be effectively improved. The barrier layer 14 may also have a plurality of openings OP1, and the light-receiving layers 16 of the light-sensing elements SE may be respectively disposed in the corresponding openings OP1. One light-sensing element SE may correspond to, for example, a plurality of light-emitting elements LE or one pixel, such as Figure 6 , Figure 8 or Figure 10 shown, but is not limited thereto.

[0045] In Figure 1 an embodiment, the barrier layer 14 may block light penetration to reduce the noise of the optical signal detected by the light-sensing element SE. The material of the barrier layer 14 and the material of the light-shielding pattern 20 may be the same or different from each other. In Figure 1 one, the material of the barrier layer 14 may be the same as the material of the light-shielding pattern 20, and the barrier layer 14 may include a light-shielding material. In some embodiments, when the material of the barrier layer 14 is different from the material of the light-shielding pattern 20, the barrier layer 14 may include a transparent organic material, and the light-shielding pattern 20 may include a light-shielding material.

[0046] In Figure 1In [the figure], the electronic device 1 may further selectively include a spacer 34 disposed on the barrier layer 14. In a top view of the electronic device 1, the spacer 34 may be separated from the light-shielding pattern 20 and may be located, for example, between adjacent openings OP2. It should be noted that when forming the light-receiving layer 16 or the light-emitting layer 18, a mask needs to be disposed on the circuit board 12 so that a light-emitting layer 18 of a specific color can be formed in a predetermined opening OP2, or the light-receiving layer 16 can be formed in the opening OP1. Therefore, the spacer 34 can be used to support the mask to reduce the damage to the circuit board 12 caused by contact with the mask. In one embodiment, the thickness T1 of the light-shielding pattern 20 may be greater than the thickness T2 of the spacer 34. The thickness T1 of the light-shielding pattern 20 may be, for example, greater than or equal to 1.2 micrometers (μm) and less than or equal to 12 micrometers. The thickness T2 of the spacer 34 may be, for example, less than 1 micrometer. The spacer 34 may, for example, include the same material as the light-shielding pattern 20, but is not limited thereto. In some embodiments, the ratio of the thickness T1 of the light-shielding pattern 20 to the thickness of the barrier layer 14 may be, for example, about 1 to 10.

[0047] As Figure 1 shown, the electronic device 1 may further include a packaging layer 22 disposed on the photosensing element SE and the light-emitting element LE to reduce the possibility of damage to the photosensing element SE and the light-emitting element LE caused by moisture or oxygen. The packaging layer 22 may be further disposed on the barrier layer 14, and the light-shielding pattern 20 may penetrate through the packaging layer 22. For example, the light-shielding pattern 20 may be in contact with the electrode E2 so that stray light does not pass through between the light-shielding pattern 20 and the electrode E2, thereby improving the signal-to-noise ratio, but is not limited thereto. In the present invention, when an element is "in contact with" another element, in the case where the element and the other element include different materials, there may be a distinct interface between the element and the other element, and in the case where the element and the other element include the same material, there may be no interface between the element and the other element, and the boundary between the two can be determined by the width difference between the element and the other element.

[0048] In one embodiment, the packaging layer 22 may include a stack of an inorganic material layer, an organic material layer, and an inorganic material layer (for example, Figure 5 the inorganic material layer 22a, the organic material layer 22b, and the inorganic material layer 22c shown), but is not limited thereto. In some embodiments, the packaging layer 22 may include a stack of at least one inorganic material layer and at least one organic material layer or multiple inorganic material layers. The inorganic material layer may, for example, include silicon nitride, silicon oxide, silicon oxynitride, aluminum oxide, or other suitable protective materials, or any combination of the above inorganic materials, but is not limited thereto. Different inorganic material layers may include the same material or different materials. The organic material layer may have the effect of flattening the upper surface and may, for example, include resin or other suitable materials, but is not limited thereto.

[0049] As Figure 1 shown, the electronic device 1 may further include a sensing layer 24 disposed on the encapsulation layer 22, and the light-shielding pattern 20 penetrates through the sensing layer 24, but is not limited thereto. The sensing layer 24 may at least include a conductor layer for forming a touch sensing element. The touch sensing element may be used, for example, to detect the position where a touch object touches or approaches the electronic device 1. The touch object may include, for example, a finger, a stylus, or other suitable objects. In one embodiment, the sensing layer 24 may be disposed on the barrier layer 14 and includes a metal layer M1, a metal layer M2, and an insulating layer IN1, and the insulating layer IN1 is disposed between the metal layer M1 and the metal layer M2. In Figure 1 this case, the metal layer M1, the insulating layer IN1, and the metal layer M2 may be sequentially formed on the encapsulation layer 22, but are not limited thereto. In some embodiments, the metal layer M1 and / or the metal layer M2 may include, for example, a mesh structure, such as Figure 8 or Figure 10 shown. Since the method of forming a touch sensing element using a metal mesh structure is well known to those skilled in the art, it will not be described in detail herein. In some embodiments, the sensing layer 24 may further include an insulating layer IN2 disposed on the metal layer M2, but is not limited thereto. The insulating layer IN1 and the insulating layer IN2 may include, for example, silicon nitride, silicon oxide, silicon oxynitride, or other suitable insulating materials. In Figure 1 this embodiment, the metal layer M1 and the metal layer M2 do not overlap with the light-shielding pattern 20, but are not limited thereto.

[0050] In Figure 1 this embodiment, the encapsulation layer 22 and the sensing layer 24 may have a through hole TH1, and the light-shielding pattern 20 is disposed in the through hole TH1 such that the light-shielding pattern 20 can penetrate through the encapsulation layer 22 and the sensing layer 24. Through this design, the light-shielding pattern 20 can block the light of the second light-emitting element LE2 from irradiating the light sensing element SE through the sensing layer 24 and the encapsulation layer 22, thereby improving the signal-to-noise ratio. The upper surface 20T of the light-shielding pattern 20 may be a flat surface, but is not limited thereto. In some embodiments, the upper surface 20T of the light-shielding pattern 20 may also be, for example, a concave surface located in the through hole TH1 or a convex surface protruding outside the through hole TH1.

[0051] As Figure 1 shown, the electronic device 1 may further include a black matrix 26 and a color filter 28 disposed on the sensing layer 24 and the light-shielding pattern 20. The color filter 28 and the black matrix 26 may serve as an antireflection layer for reducing the influence of ambient light on the contrast of the image displayed by the electronic device 1. In Figure 1 this embodiment, the black matrix 26 may overlap with the barrier layer 14. In Figure 1 this embodiment, the black matrix 26 may be in contact with the light-shielding pattern 20 such that stray light does not pass through between the light-shielding pattern 20 and the black matrix 26, thereby improving the signal-to-noise ratio.

[0052] In Figure 1 it, the black matrix 26 may have at least one opening OP3 and a plurality of openings OP4, wherein the opening OP3 may overlap the opening OP1, and the openings OP4 may respectively overlap the openings OP2. In Figure 1 the embodiment of, the color filter 28 may include, for example, a first color filter 281, a second color filter 282, a third color filter 283, and a fourth color filter 284, wherein the fourth color filter 284 may be disposed in the opening OP3, and the first color filter 281, the second color filter 282, and the third color filter 283 may be respectively disposed in the openings OP4. The first color filter 281, the second color filter 282, and the third color filter 283 may respectively have different first, second, and third colors from each other, and the first color filter 281, the second color filter 282, and the third color filter 283 may respectively overlap the first light-emitting element LE1, the second light-emitting element LE2, and the third light-emitting element LE3, but not limited thereto. By having the first color filter 281, the second color filter 282, and the third color filter 283 with different colors, the luminance of ambient light passing through one of the first color filter 281, the second color filter 282, and the third color filter 283 and then being emitted from another one through reflection by the circuit board 12 can be reduced, thereby reducing the influence of ambient light on the image contrast displayed by the electronic device 1.

[0053] In an embodiment, the fourth color filter 284 may, for example, have the same color as one of the first color filter 281, the second color filter 282, and the third color filter 283 to reduce the noise of the optical signal detected by the light sensing element SE. The color of the fourth color filter 284 may be the same as the color filter 28 of the corresponding light-emitting element LE serving as the detection light source, for example, the same as the second color filter 282, but not limited thereto.

[0054] As Figure 1As shown, the electronic device 1 may further include a protective layer 30 and a cover layer 32, which are sequentially disposed on the black matrix 26 and the color filter 28. The protective layer 30 may include an organic material, such as a photoresist material, PI, PET, an adhesive, or other suitable materials. The cover layer 32 may be attached to the protective layer 30 through an adhesive layer. The cover layer 32 may include, for example, glass or other suitable materials. In some embodiments, a hard coating layer may be selectively disposed on the cover layer 32. Alternatively, the cover layer 32 may selectively include ultra-thin glass (UTG) and a hard coating layer, where the hard coating layer is disposed on the ultra-thin glass, but is not limited thereto. The hard coating layer may include, for example, polycarbonate (PC), acrylic, or other suitable materials.

[0055] The manufacturing method of the electronic device 1 of this embodiment will be further described below. As Figure 1 shown, first, a substrate 12a is provided, and a circuit layer 12b and a conductor layer CL are formed on the substrate 12a. The methods of forming the circuit layer 12b and the conductor layer CL may include, for example, thin film processes, deposition processes, lithography and etching processes, or other suitable processes. Then, a barrier layer 14 is formed on the circuit layer 12b and the conductor layer CL, where the barrier layer 14 may form openings OP1 and OP2 through a patterning process. Subsequently, a light receiving layer 16 is formed in the opening OP1, and a light emitting layer 18 is formed in the opening OP2, where the light emitting layers 18 of light emitting elements LE of different colors may be separately formed. The steps of forming the light receiving layer 16 and forming the light emitting layers 18 of different colors may be interchanged with each other. The methods of forming the light receiving layer 16 and the light emitting layer 18 may include, for example, an evaporation process or other suitable processes. Then, an electrode E2 is formed on the barrier layer 14, the light receiving layer 16, and the light emitting layer 18, and a packaging layer 22 and a sensing layer 24 are sequentially formed on the electrode E2. Then, a through hole TH1 is formed in the insulating layer IN2 and the insulating layer IN1 of the sensing layer 24 and the packaging layer 22 to expose the electrode E2. The method of forming the through hole TH1 may include, for example, laser drilling, dry etching, wet etching, or a combination of the above. Then, a light shielding pattern 20 is formed in the through hole TH1 through a filling process. The method of forming the light shielding pattern 20 may include, for example, injecting a light shielding material using an inkjet printing process, coating the light shielding material over the entire surface first, and then removing the light shielding material outside the through hole TH1, or other suitable filling processes. In Figure 1In the embodiments, the light-shielding pattern 20 is a single-layer structure, but is not limited thereto. In some embodiments, the light-shielding pattern 20 may include, for example, at least two light-shielding layers, which are sequentially stacked in the through hole TH1. For example, the light-shielding layers may be sequentially formed in the through hole TH1 by a filling process after the through hole TH1 is formed.

[0056] It should be noted that since the light-shielding pattern 20 is formed in the through hole TH1, the first width W1 may be smaller than the second width W2. And the openings OP1 and OP2 of the barrier layer 14 are formed by an etching process, so the included angle θ2 between the side wall 14S of the barrier wall 14a and the lower surface 14B of the first electrode E1 (or the third electrode E3) facing the conductor layer CL may be smaller than the included angle θ1 between the side wall 20S of the light-shielding pattern 20 and the lower surface 20B, for example, less than 90 degrees.

[0057] As Figure 1 shown, after the light-shielding pattern 20 is formed, a black matrix 26 may be formed on the sensing layer 24 and the light-shielding pattern 20. The openings OP3 and OP4 of the black matrix 26 may be formed by a patterning process, for example. Then, color filters 28 are formed in the openings OP3 and OP4 of the black matrix 26. Next, a protective layer 30 is formed on the black matrix 26 and the color filters 28, and a cover layer 32 is bonded to the protective layer 30, thereby forming the electronic device 1 of this embodiment. As Figure 1 shown in the enlarged view of the region R1, the included angle θ3 between the side wall 26S of the black matrix 26 and the upper surface 20T of the light-shielding pattern 20 may be different from the included angles θ2 and θ1, but is not limited thereto.

[0058] In some embodiments, the color filters 28 may be formed on the sensing layer 24 and the light-shielding pattern 20 before the black matrix 26 is formed, such that adjacent color filters 28 of different colors may partially overlap, and the overlapping portions may overlap with the barrier layer 14, but are not limited thereto. In this case, the upper surface of the black matrix 26 may be, for example, a curved surface, but is not limited thereto.

[0059] The electronic device is not limited to the above embodiments, and may have other embodiments or variant embodiments. For simplicity of description, the same reference numerals will be used in the following text to label the same elements in other embodiments and variant embodiments as in the above embodiments. To clearly illustrate other embodiments and variant embodiments, the differences between other embodiments and variant embodiments and the above embodiments will be highlighted below, and the repeated parts will not be described again.

[0060] Please refer to Figure 2 , which shows a cross-sectional schematic view of an electronic device according to a first variant embodiment of the first embodiment of the present invention. As Figure 2As shown, the difference between the electronic device 1a of this variation embodiment and the electronic device 1 of the above embodiment is that the light-shielding pattern 20 may include a first sub-layer 201 and a second sub-layer 202, wherein the first sub-layer 201 may penetrate through the encapsulation layer 22, and the second sub-layer 202 may penetrate through the sensing layer 24. In Figure 2 In an embodiment, the encapsulation layer 22 may have a through-hole TH1, and the first sub-layer 201 may be disposed in the through-hole TH1. The sensing layer 24 may have a through-hole TH2, and the second sub-layer 202 may be disposed in the through-hole TH2. Since the through-hole TH1 and the through-hole TH2 are formed separately, the first sub-layer 201 and the second sub-layer 202 may form a stepped structure, but it is not limited thereto. For example, in the manufacturing method of the electronic device 1a of this variation embodiment, after forming the encapsulation layer 22, the through-hole TH1 penetrating through the encapsulation layer 22 may be formed first, and then the first sub-layer 201 may be formed in the through-hole TH1. Next, the sensing layer 24 is formed on the encapsulation layer 22 and the first sub-layer 201, and the through-hole TH2 penetrating through the sensing layer 24 is formed, and then the second sub-layer 202 is formed in the through-hole TH2, thereby forming the light-shielding pattern 20 of this variation embodiment. Since other parts of the electronic device 1a of this variation embodiment and other steps of its manufacturing method may be the same as or similar to the above embodiment, they will not be elaborated here.

[0061] In Figure 2 In a variation embodiment, the step of forming the first sub-layer 201 may selectively include performing multiple filling steps, so that the first sub-layer 201 may have a multi-layer structure, such as including a sub-layer La and a sub-layer Lb, which are sequentially stacked in the through-hole TH1, but it is not limited thereto. In some embodiments, the number of sub-layers of the first sub-layer 201 may not be limited to two layers, and may also be three or more layers. In some embodiments, the second sub-layer 202 may also have a multi-layer structure. Alternatively, the light-shielding pattern 20 may include two or more sub-layers respectively disposed in two or more through-holes. In some embodiments, the step of forming the first sub-layer 201 may also perform one filling step, so that the first sub-layer 201 is a single-layer structure, but it is not limited thereto.

[0062] Please refer to Figure 3 , which shows a cross-sectional schematic view of the electronic device of the second variation embodiment of the first embodiment of the present invention. As Figure 3 shown, the difference between the electronic device 1b of this variation embodiment and the electronic device 1 of the above embodiment is that the light-shielding pattern 20 may penetrate through the encapsulation layer 22 and is not disposed in the sensing layer 24. In Figure 3In a variation embodiment, the insulating layer IN1 of the sensing layer 24 may include at least one opening OP5, the metal layer M2 may penetrate through the opening OP5 and be connected to the metal layer M1, and the opening OP5 may overlap with the light-shielding pattern 20. Specifically, the metal layer M1 may include at least one connecting portion CP1, the metal layer M2 may include at least one connecting portion CP2, and the connecting portion CP2 may extend into the opening OP5 and be connected to the connecting portion CP1. In this way, the connecting portion CP1 and the connecting portion CP2 can reduce the stray light radiating from the insulating layer IN1 to the light-receiving layer 16. It should be noted that in some cases, for example, when the distribution density of the photosensing elements SE increases, by connecting the connecting portion CP1 and the connecting portion CP2, the touch sensitivity of the sensing layer 24 can be improved. In some embodiments, the connecting portion CP1 of the metal layer M1 may be in contact with the light-shielding pattern 20 to reduce the stray light passing through between the connecting portion CP1 and the light-shielding pattern 20.

[0063] In some embodiments, as Figure 3 shown, the electronic device 1b may further include a planar layer 36 disposed between the light-shielding pattern 20 and the sensing layer 24 and between the encapsulation layer 22 and the sensing layer 24. Since the upper surface 20T of the light-shielding pattern 20 may be an uneven surface, by disposing the planar layer 36 on the light-shielding pattern 20, the influence of the uneven upper surface 20T of the light-shielding pattern 20 on the sensing layer 24 during the manufacturing process can be reduced, thereby improving the quality of the sensing layer 24.

[0064] In some embodiments, as Figure 3 shown, the electronic device 1b may further include another light-shielding pattern 38 disposed under the metal layer M1, wherein the light-shielding pattern 38 overlaps with the opening OP5. In this case, the light-shielding pattern 38 may include, for example, a black metal or a black polymer material, so that the light-shielding pattern 38 may have an antireflection surface, thereby reducing the stray light reflected by the metal layer M1 and radiating to the light-receiving layer 16. The polymer material may include, for example, a resin or other suitable materials.

[0065] In some embodiments, as Figure 3As shown, the electronic device 1b may further include another light-shielding pattern 40 disposed on the metal layer M2, and the light-shielding pattern 40 may overlap with the opening OP5. For example, the insulating layer IN2 may include an opening OP6 exposing the metal layer M2, and the light-shielding pattern 40 may be disposed in the opening OP6 to contact the metal layer M2. In this case, the light-shielding pattern 40 may further reduce the stray light incident on the light-receiving layer 16 through the insulating layer IN2. In some embodiments, the black matrix 26 may further contact the light-shielding pattern 40, but is not limited thereto. The light-shielding pattern 40 may include, for example, the same light-shielding material as the light-shielding pattern 20, but is not limited thereto. In some embodiments, the black matrix 26 and the light-shielding pattern 40 may be formed by the same light-shielding layer, but is not limited thereto. Since the other parts of the electronic device 1b of this variant embodiment and the other steps of its manufacturing method may be the same as or similar to those of the above embodiments, they will not be described in detail herein.

[0066] Please refer to Figure 4 , which shows a cross-sectional schematic view of an electronic device according to a third variant embodiment of the first embodiment of the present invention. As Figure 4 shown, the difference between the electronic device 1c of this variant embodiment and the electronic device 1b of the above embodiment is that the light-emitting layer 18 of the light-emitting element LE may include a flip chip type light-emitting diode. In other words, the light-emitting element LE may be a light-emitting diode chip. In this case, the conductor layer CL may include a plurality of electrode pairs, where each electrode pair may include an electrode E4 and an electrode E5, and both ends of each light-emitting element LE may be respectively disposed on the electrode E4 and the corresponding electrode E5 and electrically connected to the circuit layer 12b through the electrode E4 and the electrode E5. In Figure 4 the embodiment, the electrode E2 may not be disposed on the light-emitting layer 18, but on the light-receiving layer 16. And, the barrier layer 14 may have a perforation TH3 exposing the circuit layer 12b, and the electrode E2 may be electrically connected to the circuit layer 12b through the perforation TH3. For example, the electrode E2 may extend into the perforation TH3.

[0067] In Figure 4 the embodiment, the electronic device 1c may further selectively include a bonding layer 42 disposed between the light-emitting element LE and the barrier layer 14 and used to fix the light-emitting element LE in the corresponding opening OP2, but is not limited thereto. The bonding layer 42 may surround the light-emitting element LE, for example. The bonding layer 42 may include, for example, a transparent or opaque adhesive material or other suitable materials.

[0068] In Figure 4 it, the light-shielding pattern 20 may contact the metal layer M1 of the sensing layer 24, but is not limited thereto. In some embodiments, the electronic device 1c may also selectively include Figure 3The flat layer 36 is disposed between the light-shielding pattern 20 and the sensing layer 24. In this case, the electronic device 1c may also selectively include Figure 3 The light-shielding pattern 38 is disposed under the metal layer M1. Since other parts of the electronic device 1c in this variant embodiment and other steps of its manufacturing method may be the same as or similar to those in the above embodiment, they will not be elaborated herein.

[0069] Please refer to Figure 5 , which shows a cross-sectional schematic view of an electronic device according to a second embodiment of the present invention. As Figure 5 shown, the difference between the electronic device 2 in this embodiment and the electronic device in the above embodiment is that the second width W2 of the light-shielding pattern 20 at the second height H2 in this embodiment may be smaller than the first width W1 at the first height H1. In this case, when light is incident on the sidewall of the light-shielding pattern 20 from above the light-shielding pattern 20 at a relatively large incident angle, the light can be reflected upward by the light-shielding pattern 20, thereby reducing the range of the incident angle of the light received by the light-receiving layer 16. In this way, light with a relatively large incident angle can be filtered out, thereby reducing the stray light received by the light-receiving layer 16 and improving the signal-to-noise ratio.

[0070] In Figure 5 the embodiment, the electrode E2 may be disposed on the light-shielding pattern 20. Since the light-shielding pattern 20 can be formed on the barrier layer 14 before the formation of the electrode E2, the light-shielding pattern 20 can be in contact with the barrier layer 14, for example, but not limited thereto. In this case, the encapsulation layer 22 is formed after the formation of the electrode E2, so the encapsulation layer 22 may not have a through hole, thereby improving the protection of the light-receiving layer 16 and the light-emitting layer 18. In some embodiments, since Figure 5 the light-shielding pattern 20 does not penetrate the encapsulation layer 22 and the sensing layer 24, at least one of the metal layer M1 and the metal layer M2 may overlap with the light-shielding pattern 20, but not limited thereto.

[0071] In Figure 5 the embodiment, the thickness T1 of the light-shielding pattern 20 may be greater than the thickness T2 of the spacer 34. The thickness T1 of the light-shielding pattern 20 may be, for example, greater than or equal to 1.2 micrometers (μm) and less than or equal to 12 micrometers. The thickness T2 of the spacer 34 may be, for example, less than 1 micrometer. The measurement method of the "thickness" here may take a relatively flat position of the light-shielding pattern 20 (for example, the position of the upper surface of the light-shielding pattern 20), and measure the thickness of the light-shielding pattern 20 and the thickness of the barrier layer 14 based on this position, but not limited thereto. Since other parts of the electronic device 2 in this embodiment and other steps of its manufacturing method may be the same as or similar to those in the above embodiment, they will not be elaborated herein.

[0072] Please refer to Figure 6 , which shows a top view schematic of an electronic device according to some embodiments of the present invention. AsFigure 6 As shown in parts P1 to P3, the second light-emitting element LE2 of some embodiments can serve as the light source of the light-receiving layer 16. In this case, as Figure 6 shown in parts P1 and P2, the light-shielding pattern 20 of some embodiments may include two light-shielding walls 20P, which are respectively disposed between the light-emitting layer 18 and the light-receiving layer 16 of the corresponding second light-emitting element LE2. Further, the light-emitting layer 18 and the light-receiving layer 16 may be arranged in a first direction D1, and in a second direction D2 perpendicular to the first direction D1, the width of the light-shielding wall 20P may be greater than the width of the light-receiving layer 16 and / or the width of the light-emitting layer 18, but is not limited thereto. The top view shape of the light-shielding wall 20P may be, for example, strip-shaped or arc-shaped. In Figure 6 part P2, the light-shielding wall 20P may be arranged to surround the light-receiving layer 16. As Figure 6 shown in part P3, the light-shielding pattern 20 of some embodiments may surround the light-receiving layer 18. In the present invention, "surround" may not be limited to continuously surrounding, as Figure 6 shown in part P2, and may also refer to discontinuous surrounding, as Figure 6 shown in parts P1 and P3. Figure 6 The top view structure of the light-shielding pattern 20 in any one of parts P1, P2, and P3 may be applicable to the light-shielding pattern of the above or below embodiments. It should be noted that in the top view of this article, the top view contour of the light-receiving layer 16 may refer to the top view range of the upper surface of the light-receiving layer 16, and the top view contour of the light-emitting layer 18 may refer to the top view range of the upper surface of the light-emitting layer 18, but is not limited thereto.

[0073] In some embodiments, the distance S1 between the light-shielding wall 20P and the light-emitting layer 18 may be greater than the distance S2 between the light-shielding wall 20P and the light-receiving layer 16 to improve the collimation effect of the light-shielding wall 20P, but is not limited thereto. In some embodiments, the distance S1 between the light-shielding wall 20P and the light-emitting layer 18 may also be less than or equal to the distance S2 between the light-shielding wall 20P and the light-receiving layer 16.

[0074] Please refer to Figure 7 , which shows a cross-sectional schematic view of an electronic device according to a first variant embodiment of the second embodiment of the present invention. As Figure 7 shown, the electronic device 2a of this variant embodiment and Figure 5The difference of the electronic device 2 is that the insulating layer IN1 of the sensing layer 24 may include an opening OP5, and the metal layer M2 may penetrate through the opening OP5 and be connected to the metal layer M1, and the opening OP5 may overlap with the light-shielding pattern 20. Specifically, the metal layer M1 may include at least one connecting portion CP1, the metal layer M2 may include at least one connecting portion CP2, and the connecting portion CP2 may extend into the opening OP5 and be connected to the connecting portion CP1. In this way, the connecting portion CP1 and the connecting portion CP2 can reduce the stray light from irradiating the light receiving layer 16 through the insulating layer IN1. Since the connecting portion CP1 and the connecting portion CP2 can overlap with the light-shielding pattern 20, the metal layer M1 and the metal layer M2 do not need to avoid the light-shielding pattern 20, thereby improving the touch sensitivity of the sensing layer 24.

[0075] In some embodiments, as Figure 7 shown, the electronic device 2a may further include a light-shielding pattern 38 disposed under the metal layer M1, wherein the light-shielding pattern 38 overlaps with the opening OP5. The light-shielding pattern 38 of this variant embodiment may be similar to or the same as Figure 3 the light-shielding pattern 38, so it will not be elaborated here.

[0076] In some embodiments, the electronic device 2a may further include a light-shielding pattern 40 disposed on the metal layer M2, and the light-shielding pattern 40 may overlap with the opening OP5. For example, the insulating layer IN2 may include an opening OP6 exposing the metal layer M2, and the light-shielding pattern 40 may be disposed in the opening OP6 to contact the metal layer M2. In this case, the light-shielding pattern 40 can further reduce the stray light irradiating the light receiving layer 16 through the insulating layer IN2. In some embodiments, the black matrix 26 may be disposed on the light-shielding pattern 40 and contact the light-shielding pattern 40. Since the other parts of the electronic device 2a of this variant embodiment and the other steps of its manufacturing method may be the same as or similar to the above embodiments, they will not be elaborated here.

[0077] Please refer to Figure 8 which shows a top view schematic diagram of an electronic device according to some embodiments of the present invention. As Figure 8 shown in part P4 of Figure 8 some embodiments, the opening OP5 may include two sub-openings OP51, and the sub-openings OP51 may be disposed at least between the light-emitting layer 18 and the light receiving layer 16 of the corresponding second light-emitting element LE2 in the top view. Further, as Figure 8 shown in the enlarged cross-sectional view along the section line A-A' in Figure 8The metal layer M1 in the top view can also be replaced with the metal layer M2. In Figure 8 In some embodiments, the metal layer M1 may have a grid structure, but is not limited thereto. In other embodiments, at least one of the metal layer M1 and the metal layer M2 may have a grid structure, for example.

[0078] In some embodiments, the light-emitting layer 18 and the light-receiving layer 16 may be arranged in the first direction D1, and in the second direction D2 perpendicular to the first direction D1, the width of the sub-opening OP51 may be greater than the width of the light-receiving layer 16 and / or the width of the light-emitting layer 18, but is not limited thereto.

[0079] In Figure 8 In the portion P5, the opening OP5 in some embodiments may include a plurality of sub-openings OP51, arranged around the light-receiving layer 16 in the top view of the electronic device, and the metal layer M2 may be connected to the metal layer M1 through the sub-openings OP51 respectively. In some embodiments, Figure 8 At least two adjacent sub-openings OP51 among them may be connected to each other, or the sub-openings OP51 may be connected into an opening OP5 surrounding the light-receiving layer 18. Figure 8 The top view structure of the sub-opening OP51 in any one of the portion P4 and the portion P5 may be applicable to any one of the above-mentioned Figure 3 , Figure 4 and Figure 7 any one of the electronic devices, or any one of the following Figure 9 and Figures 11 to 14 electronic devices.

[0080] Please refer to Figure 9 , which shows a cross-sectional schematic diagram of the electronic device according to the second variant embodiment of the second embodiment of the present invention. As Figure 9 shown, the difference between the electronic device 2b of this variant embodiment and the Figure 5 electronic device 2 is that the barrier layer 14 of this variant embodiment may include a transparent insulating material, and the electronic device 2 may further include a light-shielding pattern 44, disposed at least on the barrier wall 14a adjacent to the light-receiving layer 16 and used to reduce the stray light entering the light-receiving layer 16. For example, the light-shielding pattern 44 may cover the side wall and the upper surface of the barrier wall 14a. The light-shielding pattern 44 may include a black material or other suitable light-shielding materials, for example.

[0081] In Figure 9 the embodiments, the sensing layer 24 may adopt the Figure 7 structure of the sensing layer 24, but is not limited thereto. In some embodiments, the sensing layer 24 may also adopt the Figure 5 structure of the sensing layer 24. In some embodiments, Figure 9 the electronic device 2b may also selectively include Figure 3the light-shielding pattern 38 and / or the light-shielding pattern 40, but not limited thereto. Since other parts of the electronic device 2b in this variation embodiment and other steps of its manufacturing method may be the same as or similar to those in the above embodiments, they will not be elaborated here.

[0082] Please refer to Figure 10 , which shows a top view schematic diagram of the electronic device according to the third embodiment of the present invention. As Figure 10 shown, the difference between the electronic device 3 in this embodiment and the electronic device in the above embodiment is that the light-emitting element LE may include a fourth light-emitting element LE4, which is disposed on one side of the light-receiving layer 16 in the top view of the electronic device 3. For example, the fourth light-emitting element LE4 may replace Figure 6 or Figure 8 one of the second light-emitting elements LE2, but not limited thereto. In Figure 10 the embodiment, the fourth light-emitting element LE4 is used as a detection light source for the light-sensing element SE and is not used for displaying images. Therefore, the light-emitting layer 18 of the fourth light-emitting element LE4 generates light in the sensing mode and does not generate light in the display mode. Since the fourth light-emitting element LE4 generates light only in the sensing mode, the opening OP5 may be disposed at least between the light-emitting layer 18 of the fourth light-emitting element LE4 and the light-receiving layer 16, but not limited thereto. It should be noted that since the fourth light-emitting element LE4 can be independently used for detecting images, the first light-emitting element LE1 to the third light-emitting element LE3 can be independently used for displaying images in the display mode, that is, the first light-emitting element LE1 to the third light-emitting element LE3 do not need to be used for detecting images, thereby improving the service life of the first light-emitting element LE1 to the third light-emitting element LE3. In some embodiments, when the electronic device 3 operates in the sensing mode, at least one of the first light-emitting element LE1 to the third light-emitting element LE3 may also generate light for detecting images.

[0083] In some embodiments, the opening OP5 may at least partially surround the light-receiving layer 16, or include a plurality of sub-openings OP51 arranged around the light-receiving layer 16. In some embodiments, the fourth light-emitting element LE4 may, for example, generate light of the same color as the second light-emitting element LE2, but not limited thereto. To clearly show the opening OP5, Figure 10 the metal layer M2 is omitted. In some embodiments, Figure 10 the metal layer M1 may also be replaced with the metal layer M2. In some embodiments, the fourth light-emitting element LE4 may also generate light of the same color as the first light-emitting element LE1 or the third light-emitting element LE3. Figure 10 The cross-sectional structure of the fourth light-emitting element LE4 and the corresponding color filter in Figures 15 to 17 may be, for example, one of those shown, but not limited thereto. Other parts of the electronic device 3 in this embodiment and other steps of its manufacturing method may be the same as or similar to those in the above embodiments, so they will not be elaborated here.

[0084] Please refer to Figure 11 , which shows a cross-sectional schematic view of the electronic device according to the fourth embodiment of the present invention. As Figure 11 shown, the difference between the electronic device 4 in this embodiment and the Figure 5 electronic device 2 is that the electronic device 4 may further include a light-shielding pattern 46 disposed on the light-shielding pattern 20. Through the light-shielding pattern 46, the thickness of the portion of the encapsulation layer 22 located on the light-shielding pattern 20 can be reduced, thereby reducing the entry of stray light into the light-receiving layer 16. In Figure 11 the embodiment, the electrode E2 may be disposed on the light-shielding pattern 46, but is not limited thereto.

[0085] In Figure 11 , the insulating layer IN1 of the sensing layer 24 may include an opening OP5, where the connecting portion CP2 of the metal layer M2 may penetrate through the opening OP5 and connect to the connecting portion CP1 of the metal layer M1, and the opening OP5 may overlap with the light-shielding pattern 20, but is not limited thereto. In some embodiments, Figure 11 the electronic device 4 may also adopt the Figure 5 sensing layer 24. Alternatively, the electronic device 4 may selectively include the Figure 3 light-shielding pattern 38 and / or light-shielding pattern 40 shown.

[0086] As Figure 11 shown in the enlarged view of the region R2, in the cross-sectional view of the electronic device 4, the width W3 of the lower surface 20B of the portion of the light-shielding pattern 20 corresponding to the barrier wall 14a may be greater than or equal to the width W4 of the lower surface 46B of the portion of the light-shielding pattern 46 corresponding to the barrier wall 14a. In this case, the thickness T1 of the light-shielding pattern 20 may be greater than or equal to the thickness T4 of the light-shielding pattern 46, but is not limited thereto. In some embodiments, the thickness T3 of the barrier wall 14a may be less than or equal to the thickness T1 of the light-shielding pattern 20, but is not limited thereto. In some embodiments, the angle θ2 between the side wall 14S of the barrier wall 14a and the lower surface 14B of the barrier wall 14a facing the conductor layer CL, the angle θ1 between the side wall 20S of the light-shielding pattern 20 and the lower surface 20B, and the angle θ4 between the side wall 46S of the light-shielding pattern 46 and the lower surface 46B may be different from each other, but is not limited thereto. For example, the manufacturing conditions and / or materials of the light-shielding pattern 20 and the light-shielding pattern 46 may be the same or different from each other. In some embodiments, Figure 11 the light-shielding pattern 46 in Figure 13 may also be disposed, for example, on the side wall of the light-shielding pattern 20, as

[0087] In Figure 11In the manufacturing method of the electronic device 4, after forming the light-shielding pattern 20 and the spacer 34, the light-emitting layer 18 and the light-receiving layer 16 can be formed, and then the light-shielding pattern 46 is formed on the light-shielding pattern 20. Subsequently, the electrode E2 and the encapsulation layer 22 are sequentially formed on the light-shielding pattern 46. Other parts of the electronic device 4 in this embodiment and other steps of its manufacturing method can be the same as or similar to those in the above embodiments, so they will not be elaborated here.

[0088] Please refer to Figure 12 , which shows a cross-sectional schematic view of the electronic device according to the first variant embodiment of the fourth embodiment of the present invention. The difference between the electronic device 4a in this variant embodiment and Figure 11 the electronic device 4 is that the electrode E2 can be disposed between the light-shielding pattern 20 and the light-shielding pattern 46. In other words, the electrode E2 can be formed on the light-shielding pattern 20, the light-receiving layer 16, and the light-emitting layer 18 before forming the light-shielding pattern 46. Then, the light-shielding pattern 46 is formed on the electrode E2. In Figure 12 the embodiment, the light-shielding pattern 46 can be disposed between the electrode E2 and the encapsulation layer 22, but it is not limited thereto. In some embodiments, the light-shielding pattern 46 can also extend to the sidewall 20S of the light-shielding pattern 20, for example Figure 13 as shown, but it is not limited thereto. In some embodiments, Figure 12 the light-shielding pattern 46 in Figure 13 can also be disposed on the sidewall of the light-shielding pattern 20, as

[0089] Please refer to Figure 13 , which shows a cross-sectional schematic view of the electronic device according to the second variant embodiment of the fourth embodiment of the present invention. The difference between the electronic device 4b in this variant embodiment and Figure 12 the electronic device 4a is that the light-shielding pattern 46 can be disposed between the inorganic material layer 22a and the organic material layer 22b of the encapsulation layer 22. In Figure 13 the embodiment, the light-shielding pattern 46 can also extend to the sidewall 20S of the light-shielding pattern 20. For example, in the top view of the electronic device 4b, the light-shielding pattern 46 can cover the part of the light-shielding pattern 20 corresponding to the barrier wall 14a, or the width of the light-shielding pattern 46 can be greater than the width of the part of the light-shielding pattern 20 corresponding to the barrier wall 14a, but it is not limited thereto. In some embodiments, Figure 13 the width of the light-shielding pattern 46 in

[0090] such as Figure 13As shown, the light-shielding pattern 20 may include a light-shielding portion BP and a spacer portion SP. The light-shielding portion BP may be disposed on the barrier wall 14a adjacent to the light-receiving layer 16 to block stray light from entering the light-receiving layer 16, and the spacer portion SP may be disposed on a portion of the barrier layer 14 located between two adjacent openings OP2. In this case, the light-shielding portion BP and the spacer portion SP may serve as spacers for supporting the mask to reduce damage to the circuit board 12 caused by contact with the mask. In Figure 13 the embodiment, the light-shielding portion BP and the spacer portion SP may, for example, have the same thickness. In Figure 13 the method of manufacturing the electronic device 4b, after forming the inorganic material layer 22a of the encapsulation layer 22, a light-shielding pattern 46 may be formed on the inorganic material layer 22a, and then an organic material layer 22b and an inorganic material layer 22c may be sequentially formed on the light-shielding pattern 46. Other parts of the electronic device 4b of this variant embodiment and other steps of its manufacturing method may be the same as or similar to the above embodiments, so they will not be elaborated here.

[0091] Please refer to Figure 14 , which shows a cross-sectional schematic view of an electronic device according to a fifth embodiment of the present invention. As Figure 14 shown, the difference between the electronic device 5 of this embodiment and Figure 5 the electronic device 2 is that the connection portion CP1 of the metal layer M1 may have an opening OP7 overlapping with the light-receiving layer 16, the connection portion CP2 of the metal layer M2 may have an opening OP8 overlapping with the light-receiving layer 16, and the width W5 of the opening OP7 may be smaller than the width W6 of the opening OP8, so that the light ray L2 reflected from the object to be measured (for example, Figure 1 the object to be measured OB) can be collimated through the opening OP8 and the opening OP7. In Figure 14 the embodiment, the width W6 of the opening OP8 may be smaller than the width W7 of the opening OP3 of the black matrix 26. Since the distances of the openings OP3, OP8, and OP7 from the light-receiving layer 16 are in sequence from far to near, and the widths W7 of the opening OP3, W6 of the opening OP8, and W5 of the opening OP7 decrease in sequence, the light ray L2 can be further collimated to improve the optical signal received by the light-receiving layer 16. In some embodiments, when viewed along the top-down direction TD, the distance between the light-shielding patterns 20 on two opposite sides of the light-receiving layer 16 may be close to the maximum width of the opening OP1 of the barrier layer 14 to further focus the light ray L2 on the light-receiving layer 16.

[0092] In Figure 14In the embodiment, the width W5 of the opening OP7 may be smaller than the width W8 of the upper surface of the light receiving layer 16 to further enhance the effect of concentrating light on the light receiving layer 16, but it is not limited thereto. In this case, the width W5 of the opening OP7 may also be smaller than the distance between the light shielding patterns 20 located on two opposite sides of the light receiving layer 16. In some embodiments, the width W5 of the opening OP7 may be greater than the width W8 of the upper surface of the light receiving layer 16.

[0093] In some embodiments, the insulating layer IN1 of the sensing layer 24 may include an opening OP5, where the connecting portion CP2 of the metal layer M2 may penetrate through the opening OP5 and connect to the connecting portion CP1 of the metal layer M1, and the opening OP5 may overlap with the light shielding pattern 20, but it is not limited thereto. In some embodiments, the sensing layer 24 may also not include an opening OP5 that overlaps with the light shielding pattern 20. In some embodiments, Figure 14 The electronic device 5 may also selectively include Figure 3 The light shielding pattern 38 and / or the light shielding pattern 40, but it is not limited thereto. In some embodiments, the light shielding pattern 20 may be replaced with a metal pattern, for example, and the metal pattern may have perforations for guiding light to the light receiving layer 16. Other parts of the electronic device 5 of this embodiment and other steps of its manufacturing method may be the same as or similar to the above embodiments, so they will not be elaborated here.

[0094] Please refer to Figure 15 which shows a cross-sectional schematic view of the electronic device according to the sixth embodiment of the present invention. As Figure 15 shown, the difference between the electronic device 6 of this embodiment and Figure 5 the electronic device 2 is that the electronic device 6 may include a collimating pattern 48 disposed between the protective layer 30 and the covering layer 32 and having the effect of collimating the light L2 reflected from the object to be measured OB. For example, in a top view, the collimating pattern 48 may have at least two parts located on two opposite sides of the light receiving layer 16, and each part of the collimating pattern 48 may have a trapezoidal cross-sectional shape in a cross-sectional view, such that the width of the opening OP9 of the collimating pattern 48 may become smaller as it gets closer to the light receiving layer 16, but it is not limited thereto. In Figure 15 the electronic device 6 may not include the light shielding pattern 20 described above, but it is not limited thereto.

[0095] In Figure 15Among them, the minimum width W9 of the opening OP9 can be greater than the width W7 of the opening OP3 of the black matrix 26, for example, and the widths W7 of the opening OP3, W6 of the opening OP8, and W5 of the opening OP7 can decrease in sequence to enhance the effect of collimating the light L2, but it is not limited thereto. The collimating pattern 48 can include, for example, a colored organic material and / or inorganic material, metal, a transparent material surface coated with an opaque material, or other suitable light-shielding materials.

[0096] In Figure 15 In an embodiment, the electronic device 6 may further include an organic material layer 50 disposed on the collimating pattern 48 and the protective layer 30, and the organic material layer 50 may have a flat upper surface for disposing the covering layer 32. In the manufacturing method of the electronic device 6, after forming the protective layer 30, the collimating pattern 48 may be formed on the protective layer 30, and then the organic material layer 50 and the covering layer 32 may be formed on the collimating pattern 48 and the protective layer 30. The organic material layer 50 may include, for example, the same or similar materials as the organic material layer of the encapsulation layer 22.

[0097] In Figure 15 In an embodiment, the light-emitting element LE may include a fourth light-emitting element LE4, and the light-emitting layer 18 of the fourth light-emitting element LE4 may be adjacent to the light-receiving layer 16 of the light-sensing element SE. And the color filter 28 may include a fifth color filter 285 that overlaps with the light-emitting layer 18 of the fourth light-emitting element LE4, but it is not limited thereto. The color of the fifth color filter 285 may correspond to the color of the light generated by the fourth light-emitting element LE4. For example, when the fourth light-emitting element LE4 and the second light-emitting element LE2 generate light of the same color, the fifth color filter 285 may have the same color as the second color filter 282, but it is not limited thereto.

[0098] In Figure 15 In an embodiment, the insulating layer IN1 of the sensing layer 24 may adopt Figure 5 the structure of the insulating layer IN1 without an opening, but it is not limited thereto. In some embodiments, Figure 15 the sensing layer 24 of Figure 7 may also adopt the structure of the sensing layer 24 of Figure 15 such that the metal layer M1 can be connected to the metal layer M2 through the opening OP5. In some embodiments, Figure 3 the electronic device 6 of

[0099] Please refer to Figure 16 , which shows a cross-sectional schematic diagram of an electronic device according to a variant embodiment of the sixth embodiment of the present invention. As Figure 16As shown, the difference between the electronic device 6a of this variation embodiment and Figure 15 the electronic device 6 is that the electronic device 6a may further include another collimation pattern 52, which is disposed between the encapsulation layer 22 and the collimation pattern 48. For example, the collimation pattern 52 may be disposed in the sensing layer 24, so that the encapsulation layer 22 may not have through holes, thereby improving the protective force of the encapsulation layer 22. The shape of the collimation pattern 52 may be, for example, similar to or the same as the shape of the collimation pattern 48, that is, the portions of the collimation pattern 52 located on two opposite sides of the light receiving layer 16 may have a trapezoidal cross-sectional shape in a cross-sectional view. It should be noted that the width of the opening OP10 of the collimation pattern 52 may be smaller than the width of the opening OP9 of the collimation pattern 48, so that the light ray L2 can be guided by the collimation pattern 48 and the collimation pattern 52 toward the light receiving layer 16 to enhance the intensity of the optical signal. For example, the minimum width W10 of the opening OP10 may be smaller than the minimum width W9 of the opening OP9. In Figure 16 the embodiment of, the metal layers M1 and M2 of the sensing layer 24 are not disposed in the opening OP10 of the collimation pattern 52 to reduce the blocking of the light ray by the metal layers M1 and M2.

[0100] In Figure 16 the manufacturing method of the electronic device 6a, the collimation pattern 52 may be formed in the step of forming the sensing layer 24, but is not limited thereto. Since other parts of the electronic device 6a of this variation embodiment and other steps of its manufacturing method may be the same as or similar to the above embodiments, they will not be elaborated herein.

[0101] Please refer to Figure 17 , which shows a cross-sectional schematic diagram of the electronic device of the seventh embodiment of the present invention. As Figure 17 shown, the difference between the electronic device 7 of this variation embodiment and Figure 16 the electronic device 6a is that the electronic device 7 may further include a guiding structure 54, which is disposed on the barrier layer 14 and is used to guide the light ray L1 generated by the light emitting layer 18 of the fourth light emitting element LE4 toward the object to be measured OB. For example, the guiding structure 54 may overlap with the barrier layer 14 and is disposed in the sensing layer 24, but is not limited thereto. The guiding structure 54 may, for example, include the same material as the collimation pattern 52 or be formed by the same manufacturing process. Alternatively, the guiding structure 54 may be formed in the step of forming the sensing layer 24, but is not limited thereto. The guiding structure 54 may, for example, include a colored organic material and / or an inorganic material, a metal, a transparent material coated with an opaque material or other suitable light shielding materials.

[0102] In Figure 17In an embodiment, the guiding structure 54 may have at least two portions located on two opposite sides of the light-emitting layer 18 in a top view of the electronic device 7, and an angle between a sidewall and a lower surface of one portion may be greater than 90 degrees, such that the light ray L1 can be emitted from the electronic device 7 in a direction not parallel to the top view direction TD. For example, a portion of the guiding structure 54 away from the light-receiving layer 16 may have a cross-sectional shape of a parallelogram, and a portion adjacent to the light-receiving layer 16 may have a cross-sectional shape of a trapezoid, such that the light ray L1 can be directed to a side adjacent to the light-receiving layer 16 to help increase the intensity of the light ray L2 reflected from the object under test OB. In some embodiments, the guiding structure 54 may have an opening OP11, and the opening OP11 may, for example, have a uniform width W11, but is not limited thereto.

[0103] In Figure 17 , no collimation pattern may be provided on the black matrix 26 of the electronic device 7, but is not limited thereto. In some embodiments, the electronic device 7 may selectively include Figure 16 the collimation pattern 48. Other parts of the electronic device 7 in this embodiment and other steps of its manufacturing method may be the same as or similar to the above embodiments, and thus will not be described in detail herein.

[0104] In summary, in the electronic device of the present invention, since the light-shielding pattern can be provided on the barrier wall located between the light-receiving layer and the light-emitting layer, the light generated by the light-emitting layer can be blocked by the light-shielding pattern, and the number of light rays of the light-emitting layer entering the light-receiving layer without hitting the object under test can be reduced, so as to increase the signal-to-noise ratio of the optical signal received by the light-receiving layer, thereby improving the accuracy of image judgment.

[0105] The above are only embodiments of the present invention and are not intended to limit the present invention. For those of ordinary skill in the art, the present invention may have various modifications and changes. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. An electronic device, characterized in that, Comprising: A circuit board; A barrier layer disposed on the circuit board and including a first opening, a second opening, and a barrier wall, and the barrier wall is located between the first opening and the second opening; A light-receiving layer disposed in the first opening; A light-emitting layer disposed in the second opening; And A first light-shielding pattern disposed on the barrier wall; Wherein, in a cross-sectional view of the electronic device, the first light-shielding pattern has a first width at a first height and a second width at a second height, the second height is higher than the first height, and the first width is different from the second width.

2. The electronic device according to claim 1, wherein The second width is greater than the first width.

3. The electronic device according to claim 2, wherein Further comprising a packaging layer disposed on the barrier layer, wherein the first light-shielding pattern penetrates through the packaging layer.

4. The electronic device according to claim 3, wherein Further comprising a sensing layer disposed on the packaging layer, wherein the first light-shielding pattern penetrates through the sensing layer.

5. The electronic device according to claim 4, wherein The first light-shielding pattern includes a first sub-layer and a second sub-layer, the first sub-layer penetrates through the packaging layer, and the second sub-layer penetrates through the sensing layer.

6. The electronic device according to claim 1, wherein Further comprising an electrode electrically connecting the light-receiving layer and the light-emitting layer, wherein the electrode is disposed between the barrier wall and the first light-shielding pattern.

7. The electronic device according to claim 1, characterized in that, The second width is less than the first width.

8. The electronic device according to claim 7, wherein Further comprising an electrode electrically connecting the light-receiving layer and the light-emitting layer, wherein the electrode is disposed on the first light-shielding pattern.

9. The electronic device according to claim 8, characterized in that, The first light-shielding pattern is in contact with the barrier layer.

10. The electronic device according to claim 8, wherein Further comprising a second light-shielding pattern disposed on the first light-shielding pattern.

11. The electronic device according to claim 10, characterized in that, The electrode is disposed on the fourth light-shielding pattern.

12. The electronic device according to claim 10, wherein, The electrode is disposed between the first light-shielding pattern and the fourth light-shielding pattern.

13. The electronic device according to claim 1, wherein The ratio of the thickness of the first light-shielding pattern to the thickness of the barrier layer is from 1 to 10.

14. The electronic device according to claim 1, wherein In a top view of the electronic device, the first light-shielding pattern surrounds the light-receiving layer.

15. The electronic device according to claim 1, wherein The electronic device can operate in a display mode or a sensing mode, wherein the light-emitting layer generates light in the sensing mode and does not generate light in the display mode.

16. The electronic device according to claim 1, wherein, Further comprising a sensing layer disposed on the barrier layer, wherein the sensing layer includes a first metal layer, a second metal layer, and an insulating layer, and the insulating layer is disposed between the first metal layer and the second metal layer.

17. The electronic device according to claim 16, wherein The insulating layer includes a third opening, the first metal layer penetrates through the third opening and connects the second metal layer, and the third opening overlaps with the first light-shielding pattern.

18. The electronic device according to claim 17, wherein In a top view of the electronic device, the third opening includes a plurality of sub-openings arranged to surround the light-receiving layer.

19. The electronic device according to claim 17, wherein, Further comprising a third light-shielding pattern disposed on the second metal layer, wherein the third light-shielding pattern overlaps with the third opening.

20. The electronic device according to claim 17, wherein Further comprising a fourth light-shielding pattern disposed under the first metal layer, wherein the fourth light-shielding pattern overlaps with the third opening.

Images