Evaporation point source chamber structure located at center position based on improvement of material utilization rate

Abstract

The invention discloses an evaporation point source cavity structure located at the center position and based on improvement of the material utilization rate, and belongs to the technical field of evaporation. A cell shutter is installed at the joint of an evaporation source, and a main shutter is installed on the cell shutter in an overlapped mode; a mask stage is installed above the junction of the main shutter, and a touch plate, a wafer, a wafer stage and a mask are installed in the mask stage from top to bottom. The evaporation equipment with the evaporation source being a point source located in the middle of the cavity and provided with the double alignment mechanisms aims at reducing loss of evaporation materials in the evaporation technological process and shortening the production time at the same time, and therefore production is improved; according to the invention, the loss of the evaporation material is reduced, the evaporation source is designed in the middle of the chamber, the utilization rate of the evaporation material is greatly improved while the coating uniformity is ensured, the production efficiency is also improved, and the purposes of reducing the cost and improving the efficiency are successfully realized.

Description

Technical Field

[0001] The present invention relates to an evaporation point source chamber structure located at the center for improving material utilization rate, belonging to the field of evaporation coating technology. Background Art

[0002] As the core technology in the OLED industry, the evaporation coating equipment used directly restricts the product cost and production capacity. At present, for the chamber structure design of the evaporation coating equipment with point evaporation sources, considering the coating uniformity, the evaporation source positions are arranged around the bottom of the chamber. Only a small part of the evaporation material is utilized during coating, and a large amount of unused expensive evaporation material adheres to the chamber liner, making it difficult to save costs. Moreover, during coating, one or more evaporation sources only correspond to one substrate, wasting materials and making it difficult to improve production capacity at the same time. Summary of the Invention

[0003] The main purpose of the present invention is to provide an evaporation point source chamber structure located at the center for improving material utilization rate.

[0004] The purpose of the present invention can be achieved by adopting the following technical solutions:

[0005] An evaporation point source chamber structure located at the center for improving material utilization rate, comprising an evaporation source, cell shutter, main shutter, mask stage, mask, wafer stage, wafer, touch plate and vertical partition;

[0006] A cell shutter is installed at the junction of the evaporation sources, and a main shutter is superposed on the cell shutter;

[0007] A mask stage is installed above the junction of the main shutter. Inside the mask stage, a touch plate, a wafer, a wafer stage and a mask are installed from top to bottom.

[0008] Preferably, the main shutter, mask stage, mask, wafer stage, wafer and touch plate are at least one set of structures.

[0009] Preferably, the vertical partition is a vertical partition structure.

[0010] Preferably, the evaporation source is an evaporation source, and there is at least one set of evaporation sources.

[0011] Preferably, the wafers are respectively transferred to the chambers on the left and right sides.

[0012] Preferably, the cell shutter above the evaporation source and the main shutters on the left and right sides above the chamber are opened.

[0013] Advantageous technical effects of the present invention:

[0014] A vapor deposition chamber structure with an evaporation point source located at the central position based on improving material utilization rate provided by the present invention. The present invention provides a vapor deposition apparatus with a point source evaporation source located in the middle of the chamber and equipped with a double alignment mechanism, aiming to reduce the loss of vapor deposition materials during the vapor deposition process and simultaneously reduce the production time, thereby improving production.

[0015] The present invention is committed to reducing the loss of vapor deposition materials. By designing the evaporation source at the center of the chamber, while ensuring the coating uniformity, the utilization rate of vapor deposition materials is greatly improved, and the production efficiency is also synchronously enhanced, successfully achieving the purpose of cost reduction and efficiency improvement. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 Schematic diagram of a double alignment mechanism according to a preferred embodiment of a vapor deposition chamber structure with an evaporation point source located at the central position based on improving material utilization rate of the present invention;

[0017] Figure 2 Top view of the position of the evaporation source according to a preferred embodiment of a vapor deposition chamber structure with an evaporation point source located at the central position based on improving material utilization rate of the present invention;

[0018] Figure 3 Schematic diagram of a single alignment mechanism according to a preferred embodiment of a vapor deposition chamber structure with an evaporation point source located at the central position based on improving material utilization rate of the present invention.

[0019] In the figure: 1. Evaporation source; 2. Cell shutter; 3. Main shutter; 4. Mask stage; 5. Mask; 6. Wafer stage; 7. Wafer; 8. Touch plate; 9. Vertical partition. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0020] To make the technical solutions of the present invention clearer and more definite for those skilled in the art, the present invention will be further described in detail below with reference to the embodiments and the accompanying drawings, but the embodiments of the present invention are not limited thereto.

[0021] As Figure 1 - Figure 3As shown in the figure, an evaporation point source chamber structure based on improving material utilization rate and located at the center position provided in this embodiment includes an evaporation source 1, a cell shutter 2, a main shutter 3, a mask stage 4, a mask 5, a wafer stage 6, a wafer 7, a touch plate 8, and a vertical partition 9;

[0022] A cell shutter 2 is installed at the junction of the evaporation source 1, and a main shutter 3 is superimposed on the cell shutter 2;

[0023] Above the junction of the main shutter 3, a mask stage 4 is installed. Inside the mask stage 4, a touch plate 8, a wafer 7, a wafer stage 6, and a mask 5 are installed from top to bottom.

[0024] The main shutter 3, the mask stage 4, the mask 5, the wafer stage 6, the wafer 7, and the touch plate 8 are at least one set of structures.

[0025] The vertical partition 9 is a vertical partition structure.

[0026] The evaporation source 1 is an evaporation source, and there is at least one set of evaporation sources 1.

[0027] The wafers 7 are respectively transferred to the chambers on the left and right sides.

[0028] The cell shutter 2 above the evaporation source 1 and the main shutters 3 on the left and right sides above the chamber are opened.

[0029] As Figure 1 - Figure 3 As shown in the figure, the working process of an evaporation point source chamber structure based on improving material utilization rate and located at the center position provided in this embodiment is as follows:

[0030] Step 1: When the material at the bottom is heated by the evaporation source and evaporates in an approximately conical shape, the transfer system of the evaporation coater transfers two wafers 7 to be coated to the chambers on the left and right sides respectively, and the alignment mechanisms in the two chambers are used to perform alignment steps respectively;

[0031] Step 2: After successful alignment, the cell shutter 2 above the evaporation source 1 and the main shutters 3 on the left and right sides above the chamber are opened, and the two wafers 7 start coating synchronously. At this time, the coating material is fully utilized by the two wafers 7.

[0032] Embodiment

[0033] As Figure 1 - Figure 3 shown, a cell shutter 2 is installed on the top of the evaporation source 1, main shutters 3 are fixedly installed at the upper ends of both sides of the cell shutter 2, a mask stage 4 is installed on the cell shutter 2, a touch plate 8 is installed in the mask stage 4, a wafer 7 is installed at the bottom of the touch plate 8, and a mask 5 is correspondingly installed at the bottom of the wafer 7;

[0034] When the material at the bottom is heated by the evaporation source and evaporates in an approximately conical shape, the transfer system of the evaporation coater transfers two wafers 7 to be coated to the chambers on the left and right sides respectively, and alignment steps are respectively carried out by the alignment mechanisms in the two chambers;

[0035] After the alignment is successful, the cell shutter 2 above the evaporation source and the main shutters 3 on the left and right sides above the chamber are opened, and the two wafers 7 start coating synchronously. At this time, the coating material is fully utilized by the two wafers 7.

[0036] The above is only a further embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the scope disclosed by the present invention, according to the technical solution and its concept of the present invention, makes equivalent substitutions or changes, all belong to the protection scope of the present invention.

Claims

1. An evaporation point source chamber structure located at a central position based on improving material utilization, characterized in that: It includes an evaporation source (1), a cell shutter (2), a main shutter (3), a mask stage (4), a mask (5), a wafer stage (6), a wafer (7), a touch plate (8) and a vertical partition (9); A cell shutter (2) is installed at the junction of the evaporation source (1), and a main shutter (3) is installed on the cell shutter (2); A mask stage (4) is installed above the intersection of the main shutter (3). A touch plate (8), a wafer (7), a wafer stage (6) and a mask (5) are installed in the mask stage (4) from top to bottom.

2. The evaporation point source chamber structure located at the center based on improving material utilization according to claim 1, characterized in that: The main shutter (3), the mask stage (4), the mask (5), the wafer stage (6), the wafer (7) and the touch plate (8) are at least one set of structures.

3. The evaporation point source chamber structure located at the center based on improving material utilization according to claim 2, characterized in that: The vertical partition (9) is a vertical partition structure.

4. The evaporation point source chamber structure located at the center based on improving material utilization according to claim 3, characterized in that: The evaporation source (1) is an evaporation source, and the evaporation source (1) is at least one group.

5. The evaporation point source chamber structure located at the center based on improving material utilization according to claim 4, characterized in that: The wafer (7) is transferred to the chambers on the left and right sides respectively.

6. The evaporation point source chamber structure located at the center based on improving material utilization according to claim 5, characterized in that: The cell shutter (2) above the evaporation source (1) and the main shutters (3) on the left and right sides of the chamber are opened.

Images