Granularity measurement method of silicon-based photoetching material
By sequentially coating the target lithography material and the silicon-based lithography material to be tested on the substrate, and etching and removing it, measuring the particle size of the substrate surface, the problem of insufficient particle size measurement accuracy of the silicon-based lithography material in the prior art is solved, and higher measurement accuracy is achieved.
Patent Information
- Application Number
- CN202311847416.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-28
- Publication Date
- 2025-07-01
AI Technical Summary
The prior art requires constant spectral correction when measuring the particle size of silicon-based lithography materials, resulting in inaccuracy of errors due to factors such as material thickness and surface roughness.
The target lithography material and the silicon-based lithography material to be tested are sequentially coated on the substrate, and then etched and removed, the particle size of the silicon-based lithography material to be measured on the substrate surface, and the particle size of the silicon-based lithography material to be tested is determined by the difference in the target particle size.
This method can accurately measure the particle size of silicon-based lithography materials, avoid misdetection caused by material thickness and surface roughness, and improve measurement accuracy.
Smart Images
Figure CN120232776A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of integrated circuit manufacturing, and particularly to a method for measuring the particle size of a silicon-based lithography material. Background Art
[0002] The particle size of a lithography material is a key indicator for measuring the quality of the lithography material. A low particle size can ensure that no defects are generated in the chip during the manufacturing process due to the particles in the lithography material, improving the yield and electrical performance of the chip. Therefore, how to accurately measure the number of particles in the lithography material is an important part of material evaluation and verification.
[0003] Currently, when measuring the particle size of a silicon-based lithography material, the commonly used method is as follows: Use an SP series particle testing machine to first measure the number of particles on the substrate, and this number of particles is used as the previous value; coat the silicon-based lithography material on the substrate, and then use the same testing machine to measure the number of particles, and this number of particles is used as the subsequent value; the difference between the previous value of the number of particles and the subsequent value of the number of particles is the number of particles in the silicon-based lithography material. This testing method is not accurate because the principle of the SP series particle testing machine is to use obliquely incident elliptically polarized light to strike the surface of the substrate to be tested, causing reflection and diffuse scattering. The collection cylinder of the machine then collects the reflected and diffusely scattered light signals, and the surface condition of the substrate is obtained by analyzing the signal intensity and phase change of these lights. When a silicon-based lithography material 2 is coated on the surface of the substrate 1, part of the incident light is reflected and diffusely reflected on the surface of the silicon-based lithography material 2, and another part of the light is refracted into the silicon-based lithography material 2, then reflected at the contact surface between the silicon-based lithography material 2 and the substrate 1, and then penetrates through the silicon-based lithography material 2 and is reflected out. The silicon-based lithography material 2 contains particles 3, as Figure 1 shown. Therefore, factors such as the surface roughness of the silicon-based lithography material, the refractive index of the silicon-based lithography material, and the coating thickness of the silicon-based lithography will all affect the accuracy of the test results, and continuous spectral calibration needs to be carried out for each material and each thickness. Otherwise, it is very easy to cause false detection of particles. Therefore, the method of spin-coating the silicon-based lithography material on the substrate and then measuring the particle size of the silicon-based lithography material cannot accurately reflect the particle size of the silicon-based lithography material.
[0004] Therefore, how to solve the above technical problems should be the key concern of those skilled in the art. Summary of the Invention
[0005] The purpose of this application is to provide a method for measuring the particle size of a silicon-based lithography material to improve the measurement accuracy of the particle size of the silicon-based lithography material.
[0006] To solve the above technical problems, this application provides a method for measuring the particle size of a silicon-based lithography material, including:
[0007] Coat a target lithography material on the upper surface of the substrate; the type of the target lithography material is different from that of the silicon-based lithography material to be measured;
[0008] Coat the silicon-based lithography material to be measured on the upper surface of the target lithography material;
[0009] Etch and remove the silicon-based lithography material to be measured and the target lithography material, and measure the first particle size of the substrate surface;
[0010] Determine the difference between the first particle size and the target particle size as the particle size of the silicon-based lithography material to be measured;
[0011] Wherein, the target particle size is the sum of the second particle size and the third particle size, the second particle size is the particle size before coating the target lithography material on the substrate surface; the third particle size is the particle size of the target lithography material; the first particle size, the second particle size and the third particle size are measured by the same testing equipment.
[0012] Optionally, before coating the target lithography material on the upper surface of the substrate, it further includes:
[0013] Deposit a dielectric layer on the upper surface of the substrate; the type of the dielectric layer is different from that of the target lithography material;
[0014] Correspondingly, coating the target lithography material on the upper surface of the substrate includes:
[0015] Coat the target lithography material on the upper surface of the dielectric layer;
[0016] The second particle size is the particle size before coating the target lithography material on the upper surface of the dielectric layer; the first particle size is the particle size of the upper surface of the dielectric layer after etching and removing the silicon-based lithography material to be measured and the target lithography material.
[0017] Optionally, it further includes:
[0018] Deposit the dielectric layer on the upper surface of the substrate and coat the target lithography material on the upper surface of the dielectric layer;
[0019] Etch the target lithography material and measure the fourth particle size of the upper surface of the dielectric layer;
[0020] Determine the difference between the fourth particle size and the second particle size as the third particle size.
[0021] Optionally, it further includes:
[0022] Deposit the dielectric layer on the upper surface of the substrate and measure the fifth particle size of the upper surface of the dielectric layer;
[0023] Coat the target lithography material on the upper surface of the dielectric layer;
[0024] Etch the target lithography material and measure the fourth granularity of the upper surface of the dielectric layer;
[0025] Determine the difference between the fourth granularity and the fifth granularity as the third granularity.
[0026] Optionally, it further includes:
[0027] Deposit the dielectric layer on the upper surface of the substrate and measure the first particle distribution image of the upper surface of the dielectric layer;
[0028] Coat the target lithography material on the upper surface of the dielectric layer;
[0029] Etch the target lithography material and measure the second particle distribution image of the upper surface of the dielectric layer;
[0030] Compare the first particle distribution image and the second particle distribution image, and determine the increased number of particles in the second particle distribution image as the third granularity.
[0031] Optionally, etching and removing the silicon-based lithography material to be measured and the target lithography material includes:
[0032] Use the first plasma to etch the silicon-based lithography material to be measured and part of the target lithography material;
[0033] Use the second plasma to completely etch the remaining target lithography material, and etch until the interface between the target lithography material and the dielectric layer.
[0034] Optionally, depositing a dielectric layer on the upper surface of the substrate includes:
[0035] Deposit a silicon dioxide layer on the upper surface of the substrate.
[0036] Optionally, the thickness range of the dielectric layer is 100 angstroms to 500 angstroms.
[0037] Optionally, coating a target lithography material on the upper surface of the substrate includes:
[0038] Coat spin-on carbon on the upper surface of the substrate.
[0039] Optionally, using the second plasma to completely etch the remaining target lithography material includes:
[0040] Use Cl2 and O2 plasmas to completely etch the remaining target lithography material.
[0041] A method for measuring the particle size of a silicon-based lithography material provided by this application includes: coating a target lithography material on the upper surface of a substrate; the type of the target lithography material is different from that of the silicon-based lithography material to be measured; coating the silicon-based lithography material to be measured on the upper surface of the target lithography material; etching away the silicon-based lithography material to be measured and the target lithography material, and measuring the first particle size of the surface of the substrate; determining the difference between the first particle size and the target particle size as the particle size of the silicon-based lithography material to be measured; wherein, the target particle size is the sum of a second particle size and a third particle size, the second particle size is the particle size before coating the target lithography material on the surface of the substrate; the third particle size is the particle size of the target lithography material; the first particle size, the second particle size, and the third particle size are measured by the same testing equipment.
[0042] It can be seen that when measuring the particle size of the silicon-based lithography material in this application, the target lithography material and the silicon-based lithography material to be measured are successively coated on the substrate, and then the target lithography material and the silicon-based lithography material to be measured are etched away, and the first particle size of the upper surface of the substrate at this time is measured. The first particle size is the sum of the particles in the target lithography material, the particles in the silicon-based lithography material to be measured, and the particles on the upper surface of the substrate. Then, subtracting the particle size of the target lithography material and the particle size of the substrate surface from the first particle size respectively can obtain the particle size of the silicon-based lithography material to be measured, and the test result is accurate. This test method is not affected by the thickness, surface roughness, etc. of the silicon-based lithography material to be measured, and can improve the accuracy of particle size measurement. Description of the Drawings
[0043] In order to more clearly illustrate the technical solutions of the embodiments of this application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of this application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0044] Figure 1 It is a schematic diagram of the principle for measuring the particle size of a silicon-based lithography material by an SP series particle testing machine in the related art;
[0045] Figure 2 It is the flow chart of a method for measuring the particle size of a silicon-based lithography material provided by an embodiment of this application Figure 1 ;
[0046] Figure 3 It is the flow chart of a method for measuring the particle size of a silicon-based lithography material provided by an embodiment of this application Figure 2 ;
[0047] Figure 4A flowchart for measuring the particle size of a target lithography material provided by an embodiment of the present application;
[0048] Figures 5 to 8 A process flowchart for measuring the particle size of a silicon-based lithography material provided by an embodiment of the present application. Detailed implementation manners
[0049] To enable those skilled in the art to better understand the solution of the present application, the present application will be further described in detail below with reference to the accompanying drawings and specific implementation manners. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.
[0050] As described in the background art section, currently, when measuring the particle size of a silicon-based lithography material, the silicon-based lithography material is directly coated on a substrate, and the number of particles on the substrate before and after coating the silicon-based lithography material is measured by an SP series particle testing machine. The difference between the two particle numbers is the particle size of the silicon-based lithography material. However, due to the problems of the testing principle of the SP series particle testing machine, factors such as the surface roughness of the silicon-based lithography material, the refractive index of the silicon-based lithography material, and the coating thickness of the silicon-based lithography will affect the accuracy of the test results. It is necessary to continuously perform spectral calibration for each material and each thickness, otherwise it is easy to cause false detection of particles.
[0051] In view of this, the present application provides a method for measuring the particle size of a silicon-based lithography material. Please refer to Figure 2 , the method includes:
[0052] Step S101: Coat a target lithography material on the upper surface of the substrate; the type of the target lithography material is different from that of the silicon-based lithography material to be measured.
[0053] The substrate can be a bare silicon wafer or other types of substrates, which are not specifically limited in this embodiment.
[0054] The silicon-based lithography material to be measured contains silicon. The type of the target lithography material is different from that of the silicon-based lithography material to be measured, that is, the target lithography material can be a lithography material that does not contain silicon. For example, the target lithography material can be a carbon-based lithography material, and the carbon-based lithography material contains carbon and does not contain silicon.
[0055] As an implementable mode, coating the target lithography material on the upper surface of the substrate includes: coating spin-on carbon (SOC) on the upper surface of the substrate. However, this embodiment is not limited thereto, and other types of carbon-based lithography materials can also be spin-coated on the substrate, such as photoresist (PR), bottom anti-reflection coating (BARC), etc.
[0056] Step S102: Coat the silicon-based lithography material to be measured on the upper surface of the target lithography material.
[0057] The silicon-based lithography material to be measured can be SiARC (organosiloxane material), etc., and this embodiment is not specifically limited.
[0058] In order to improve the uniformity of the coating thickness of the silicon-based lithography material to be measured, as an implementable mode, coating the silicon-based lithography material to be measured on the upper surface of the target lithography material includes:
[0059] Adopt a spin-coating method to coat the silicon-based lithography material to be measured on the upper surface of the target lithography material.
[0060] Step S103: Etch and remove the silicon-based lithography material to be measured and the target lithography material, and measure the first particle size of the substrate surface.
[0061] The etching is carried out by plasma etching. Since the types of the silicon-based lithography material to be measured and the target lithography material are different, different plasmas are used to etch the silicon-based lithography material to be measured and the target lithography material respectively during etching.
[0062] When etching the silicon-based lithography material to be measured, a plasma with a high etching selectivity for the silicon-based lithography material to be measured is used, and when etching the target lithography material, a plasma with a high etching selectivity for the target lithography material is used.
[0063] After the silicon-based lithography material to be measured and the target lithography material are etched, the particles in the silicon-based lithography material to be measured and the target lithography material that are not reacted by the etching gas fall on the upper surface of the substrate. At this time, the first particle size of the upper surface of the substrate is measured. The first particle size includes the number of particles in the silicon-based lithography material to be measured, the number of particles in the target lithography material, and the number of particles on the upper surface of the substrate.
[0064] The measurement can use an SP series particle test machine in related technologies, such as an SP2 machine, an SP3 machine, or an SP5 machine, etc. During the test, the particle size range selected on the test machine can be selected according to the actual situation. For example, a 60nm size mode can be selected for measurement.
[0065] Step S104: Determine the difference between the first particle size and the target particle size as the particle size of the silicon-based photolithography material to be measured.
[0066] Wherein, the target particle size is the sum of a second particle size and a third particle size. The second particle size is the particle size before the target photolithography material is coated on the substrate surface; the third particle size is the particle size of the target photolithography material; the first particle size, the second particle size, and the third particle size are measured by the same testing equipment.
[0067] The first particle size, the second particle size, and the third particle size are measured by the same testing equipment, which can avoid the error influence of the testing equipment on the testing result and ensure the accuracy of the testing result.
[0068] In this embodiment, the second particle size is the particle size when there is no target photolithography material coated on the upper surface of the substrate.
[0069] In this embodiment, when measuring the particle size of the silicon-based photolithography material, the target photolithography material and the silicon-based photolithography material to be measured are sequentially coated on the substrate, and then the target photolithography material and the silicon-based photolithography material to be measured are etched away. The first particle size of the upper surface of the substrate at this time is measured. The first particle size is the sum of the particles in the target photolithography material, the particles in the silicon-based photolithography material to be measured, and the particles on the upper surface of the substrate. Then, by subtracting the particle size of the target photolithography material and the particle size of the substrate surface from the first particle size respectively, the particle size of the silicon-based photolithography material to be measured can be obtained, and the test result is accurate. This test method is not affected by the thickness, surface roughness, etc. of the silicon-based photolithography material to be measured, and can improve the accuracy of particle size measurement.
[0070] Please refer to Figure 3 , on the basis of the above embodiment, in an embodiment of the present application, a method for measuring the particle size of a silicon-based photolithography material includes:
[0071] Step S201: Deposit a dielectric layer on the upper surface of the substrate; the dielectric layer is of a different type from the target photolithography material.
[0072] The dielectric layer and the substrate can be regarded as a new substrate.
[0073] When the target photolithography material is a carbon-based photolithography material, such as SOC, etc., the material of the dielectric layer can be a silicon-containing material, such as the material of the dielectric layer can be silicon dioxide, etc.
[0074] As an implementable manner, depositing a dielectric layer on the upper surface of the substrate includes: depositing a silicon dioxide layer on the upper surface of the substrate.
[0075] Among them, the deposition method of the silicon dioxide layer includes, but is not limited to, any one of plasma-enhanced chemical vapor deposition (PECVD for short), low-pressure chemical vapor deposition (LPCVD for short), and atmospheric pressure chemical vapor deposition (APCVD for short).
[0076] The thickness range of the dielectric layer is 100 angstroms to 500 angstroms. For example, the thickness of the dielectric layer can be 100 angstroms, 200 angstroms, 300 angstroms, 400 angstroms, 500 angstroms, etc.
[0077] When the substrate is a bare silicon wafer, when etching the target photoresist material, the etching may end up etching the surface of the bare silicon wafer, causing the upper surface of the bare silicon wafer to be uneven. As a result, when measuring the first particle size, the protruding parts may be mismeasured as particles. The function of the dielectric layer is to act as an etching barrier layer. By setting a dielectric layer with a different type from the target photoresist material, when etching the target photoresist material, the dielectric layer will not be etched, and the etching stops at the upper surface of the dielectric layer. That is, the upper surface of the dielectric layer remains flat, which will not affect the measurement of the first particle size and can improve the accuracy of the first particle size, and further improve the measurement accuracy of the particle size of the silicon-based photoresist material.
[0078] After the deposition of the dielectric layer is completed and before the target photoresist material is coated, it also includes measuring the particle size on the upper surface of the dielectric layer to obtain the second particle size.
[0079] Step S202: Coat the target photoresist material on the upper surface of the dielectric layer; the target photoresist material is of a different type from the silicon-based photoresist material to be measured.
[0080] In this embodiment, the target photoresist material can be spin-on carbon.
[0081] In order to improve the coating accuracy of the target photoresist material, as an implementable method, the target photoresist material can be coated by spin coating.
[0082] Step S203: Coat the silicon-based photoresist material to be measured on the upper surface of the target photoresist material.
[0083] Step S204: Etch and remove the silicon-based photoresist material to be measured and the target photoresist material, and measure the first particle size on the upper surface of the dielectric layer.
[0084] As an implementable method, etching and removing the silicon-based photoresist material to be measured and the target photoresist material includes:
[0085] Etch the silicon-based photolithography material to be measured and part of the target photolithography material using a first plasma.
[0086] Use a second plasma to completely etch the remaining target photolithography material until the interface between the target photolithography material and the dielectric layer.
[0087] The first plasma has a high etching selectivity for the silicon-based photolithography material to be measured and locally etches the target photolithography material. The etched target photolithography material is not limited in this embodiment.
[0088] Among them, the target photolithography material is spin-on carbon. Etching the silicon-based photolithography material to be measured and part of the target photolithography material using a first plasma includes: using CF4 and CHF3 plasmas to etch the silicon-based photolithography material to be measured and part of the target photolithography material.
[0089] Using a second plasma to completely etch the remaining target photolithography material includes: using Cl2 and O2 plasmas to completely etch the remaining target photolithography material.
[0090] Step S205: Determine the difference between the first particle size and the target particle size as the particle size of the silicon-based photolithography material to be measured.
[0091] Among them, the target particle size is the sum of the second particle size and the third particle size. The second particle size is the particle size on the upper surface of the dielectric layer on the substrate; the third particle size is the particle size of the target photolithography material; the first particle size, the second particle size, and the third particle size are measured by the same testing equipment.
[0092] Based on any of the above embodiments, in an embodiment of the present application, the particle size measurement method may further include the particle size measurement process of the target photolithography material. As an implementable manner, please refer to Figure 4 , the particle size measurement process of the target photolithography material includes:
[0093] Step S301: Deposit the dielectric layer on the upper surface of the substrate and coat the target photolithography material on the upper surface of the dielectric layer.
[0094] Among them, the dielectric layer is located on the upper surface of the substrate.
[0095] The target photolithography material is a carbon-based photolithography material. The specific type of the target photolithography material is the same as the target photolithography material involved in coating the silicon-based photolithography material to be measured on the surface of the target photolithography material and performing etching, and then measuring the first particle size in the above embodiments. For example, the target photolithography material can all be spin-on carbon.
[0096] Step S302: Etch the target photolithography material and measure the fourth particle size on the upper surface of the dielectric layer.
[0097] The target photolithography material can be etched using Cl2 and O2 plasmas. The particles in the target photolithography material that are not reacted by the etching gas fall on the upper surface of the dielectric layer. The fourth particle size measured at this time is the sum of the number of particles in the target photolithography material and the number of particles on the upper surface of the dielectric layer.
[0098] Step S303: Determine the difference between the fourth particle size and the second particle size as the third particle size.
[0099] By subtracting the second particle size from the fourth particle size, the particle size of the target photolithography material, i.e., the third particle size, can be obtained.
[0100] In this embodiment, the second particle size measured before step S202 in the above embodiment is directly used as the particle size on the surface of the dielectric layer. In other embodiments, when measuring the particle size of the target photolithography material, the particle size on the surface of the dielectric layer can also be measured again. This process includes:
[0101] Deposit the dielectric layer on the upper surface of the substrate and measure the fifth particle size on the upper surface of the dielectric layer;
[0102] Coat the target photolithography material on the upper surface of the dielectric layer;
[0103] Etch the target photolithography material and measure the fourth particle size on the upper surface of the dielectric layer;
[0104] Determine the difference between the fourth particle size and the fifth particle size as the third particle size.
[0105] As another implementable embodiment, the particle size of the target photolithography material can also be obtained by image comparison. The particle size measurement process of the target photolithography material includes:
[0106] Step S401: Deposit the dielectric layer on the upper surface of the substrate and measure the first particle distribution image on the upper surface of the dielectric layer;
[0107] Step S402: Coat the target photolithography material on the upper surface of the dielectric layer;
[0108] Step S403: Etch the target photolithography material and measure the second particle distribution image on the upper surface of the dielectric layer;
[0109] Step S404: Compare the first particle distribution image and the second particle distribution image, and determine the number of increased particles in the second particle distribution image as the third particle size.
[0110] In this method, by comparing the first particle distribution image and the second particle distribution image, it is determined that the particles added in the second particle distribution image are the particle sizes in the target lithography material.
[0111] The following describes the process of measuring the particle size of the silicon-based lithography material in this application with a specific case.
[0112] Step 1: As shown in Figure 5 and Figure 6 , a silicon dioxide layer 4 with a thickness of 100 angstroms is deposited on the bare silicon wafer 7 by PECVD method, and the particle size on the upper surface of the silicon dioxide layer 4 is measured as the second particle size.
[0113] Step 2: As shown in Figure 7 , a layer of spin-on carbon 5 is spin-coated on the upper surface of the silicon dioxide layer 4, and then a layer of silicon-based lithography material SiARC 6 to be measured is spin-coated on the upper surface of the spin-on carbon 5.
[0114] Step 3: As shown in Figure 8 , first, SiARC 6 is etched away by CF4 and CHF3 plasma in the grab signal mode (EPD mode), and a part of the underlying spin-on carbon 5 is also etched away (because SiARC 6 is a silicon-based material and cannot be etched by Cl2 and O2 plasma directly, so CF4 and CHF3 are needed to remove it first), and then the remaining spin-on carbon 5 is completely removed by Cl2 and O2 plasma, and the etching stops on the upper surface of the silicon dioxide layer 4. At this time, the impurity particles 3 in SiARC and the spin-on carbon that are not reacted by the etching gas fall on the upper surface of the silicon dioxide layer 4, and the particle size on the upper surface of the silicon dioxide layer 4 is measured as the first particle size.
[0115] Step 4: A layer of spin-on carbon is spin-coated on the upper surface of the silicon dioxide layer, and the spin-on carbon is etched away using Cl2 and O2 plasma, and the particle size on the upper surface of the silicon dioxide layer is measured again as the fourth particle size; the fourth particle size is subtracted from the second particle size to obtain the particle size of the spin-on carbon as the third particle size.
[0116] Step 5: By subtracting the second particle size from the first particle size and then subtracting the third particle size, the particle size of the silicon-based lithography material SiARC to be measured can be obtained.
[0117] In this specification, each embodiment is described in a progressive manner. Each embodiment focuses on the differences from other embodiments. For the same or similar parts between each embodiment, reference can be made to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and reference can be made to the description in the method part for the relevant parts.
[0118] The above has introduced in detail the method for measuring the particle size of the silicon-based lithography material provided in this application. Specific examples are used in this article to elaborate on the principle and implementation manner of this application. The description of the above embodiments is only used to help understand the method and its core idea of this application. It should be noted that for those of ordinary skill in the art, without departing from the principle of this application, several improvements and modifications can be made to this application, and these improvements and modifications also fall within the protection scope of the claims of this application.
Claims
1. A method for measuring the particle size of a silicon-based lithography material, characterized in that, Comprising: Coating a target lithography material on the upper surface of the substrate; The type of the target lithography material is different from that of the silicon-based lithography material to be measured; Coating the silicon-based lithography material to be measured on the upper surface of the target lithography material; Etching away the silicon-based lithography material to be measured and the target lithography material, and measuring the first granularity of the substrate surface; Determining the difference between the first granularity and the target granularity as the granularity of the silicon-based lithography material to be measured; Wherein, the target granularity is the sum of a second granularity and a third granularity, the second granularity is the granularity of the substrate surface before coating the target lithography material; the third granularity is the granularity of the target lithography material; the first granularity, the second granularity and the third granularity are measured by the same testing equipment.
2. The method for measuring the particle size of the silicon-based lithography material according to claim 1, characterized in that Before coating the target lithography material on the upper surface of the substrate, further comprising: Depositing a dielectric layer on the upper surface of the substrate; the type of the dielectric layer is different from that of the target lithography material; Correspondingly, coating the target lithography material on the upper surface of the substrate includes: Coating the target lithography material on the upper surface of the dielectric layer; The second granularity is the granularity of the upper surface of the dielectric layer before coating the target lithography material; the first granularity is the granularity of the upper surface of the dielectric layer after etching away the silicon-based lithography material to be measured and the target lithography material.
3. The method for measuring the particle size of the silicon-based lithography material according to claim 2, wherein, Further comprising: Depositing the dielectric layer on the upper surface of the substrate and coating the target lithography material on the upper surface of the dielectric layer; Etching the target lithography material and measuring the fourth granularity of the upper surface of the dielectric layer; Determining the difference between the fourth granularity and the second granularity as the third granularity.
4. The method for measuring the particle size of the silicon-based lithography material according to claim 2, wherein, Further comprising: Depositing the dielectric layer on the upper surface of the substrate and measuring the fifth granularity of the upper surface of the dielectric layer; Coating the target lithography material on the upper surface of the dielectric layer; Etching the target lithography material and measuring the fourth granularity of the upper surface of the dielectric layer; Determining the difference between the fourth granularity and the fifth granularity as the third granularity.
5. The method for measuring the particle size of the silicon-based lithography material according to claim 2, characterized in that, Further comprising: Depositing the dielectric layer on the upper surface of the substrate and measuring the first particle distribution image of the upper surface of the dielectric layer; Coating the target lithography material on the upper surface of the dielectric layer; Etching the target lithography material and measuring the second particle distribution image of the upper surface of the dielectric layer; Comparing the first particle distribution image and the second particle distribution image, and determining the increased number of particles in the second particle distribution image as the third granularity.
6. The method for measuring the particle size of the silicon-based lithography material according to claim 2, characterized in that, Etching away the silicon-based lithography material to be measured and the target lithography material includes: Etching the silicon-based lithography material to be measured and a part of the target lithography material by using a first plasma; Completely etching the remaining target lithography material by using a second plasma, and etching until the interface between the target lithography material and the dielectric layer.
7. The method for measuring the particle size of the silicon-based lithography material according to claim 2, characterized in that, Depositing the dielectric layer on the upper surface of the substrate includes: Depositing a silicon dioxide layer on the upper surface of the substrate.
8. The method for measuring the particle size of the silicon-based lithography material according to claim 2, characterized in that, The thickness range of the dielectric layer is 100 angstroms to 500 angstroms.
9. The method for measuring the particle size of the silicon-based lithography material according to any one of claims 1 to 8, characterized in that, Coating the target lithography material on the upper surface of the substrate includes: Coating spin-on carbon on the upper surface of the substrate.
10. The method for measuring the particle size of the silicon-based lithography material according to claim 9, wherein Etching the remaining target lithography material completely using a second plasma includes: Completely etching the remaining target lithography material using Cl2 and O2 plasmas.