Thin film resistor and radio frequency circuit

Abstract

The invention discloses a thin film resistor and a radio frequency circuit. The thin film resistor comprises a substrate and a resistor structure located on one side of the substrate. The orthographic projection of the resistor structure on the substrate comprises a first edge and a second edge which are opposite to each other; the length of the first edge is smaller than that of the second edge, and the projection shape of at least one of the first edge and the second edge is in an arc shape; wherein the first edge is the edge where the input end of the resistor structure is located, and the second edge is the edge where the output end of the resistor structure is located. According to the technical scheme of the embodiment of the invention, by optimizing the structural design of the thin film resistor, the impedance stability of the thin film resistor is improved, the voltage standing wave ratio is reduced, and the influence on the performance of a radio frequency circuit is reduced.

Description

Technical Field

[0001] The present invention relates to the field of microelectronics technology, and in particular, to a thin film resistor and a radio frequency circuit. Background Art

[0002] At present, according to different resistor body materials, resistors can be divided into three categories: wire-wound resistors, film resistors, and synthetic resistors. Among them, thin film resistors in film resistors are widely used in high-precision applications such as various instruments, medical devices, and electronic digital products due to their advantages of small size, high precision, and good stability, and have good application prospects.

[0003] In the field of radio frequency and microwave, thin film resistors are commonly used as load resistors, generally located at the end of the signal chain branch, mainly used to absorb the excess energy in the radio frequency circuit and stabilize the circuit performance. In addition, due to the characteristics of the radio frequency circuit, it is necessary to make the impedance of the thin film resistor consistent with the transmission line impedance of the radio frequency circuit to ensure the performance of the radio frequency circuit and enable the thin film resistor to absorb the excess energy in the circuit more effectively.

[0004] However, it is found that the impedance of traditional thin film resistors is unstable at high frequencies (such as after 4 GHz), and the voltage standing wave ratio (VSWR) is too high, which cannot achieve good phase matching with the radio frequency circuit and affects the performance of the radio frequency circuit. Summary of the Invention

[0005] The present invention provides a thin film resistor and a radio frequency circuit. By optimizing the structural design of the thin film resistor, the impedance stability of the thin film resistor is improved, the voltage standing wave ratio is reduced, and the influence on the performance of the radio frequency circuit is reduced.

[0006] In a first aspect, the present invention provides a thin film resistor, comprising: a substrate and a resistor structure located on one side of the substrate;

[0007] The orthographic projection of the resistor structure on the substrate includes opposite first and second edges; the length of the first edge is less than the length of the second edge, and the projection shape of at least one of the first edge and the second edge is arc-shaped;

[0008] Wherein, the first edge is the edge where the input end of the resistor structure is located, and the second edge is the edge where the output end of the resistor structure is located.

[0009] Optionally, the projection shape of the first edge is linear, and the projection shape of the second edge is arc-shaped;

[0010] The second edge protrudes toward the side away from the geometric center of the resistor structure.

[0011] Optionally, the projected shape of the first edge is arc-shaped, and the projected shape of the second edge is linear;

[0012] The first edge bulges towards the side away from the geometric center of the resistor structure.

[0013] Optionally, the projected shapes of both the first edge and the second edge are arc-shaped;

[0014] The first edge is concave towards the side close to the geometric center of the resistor structure, and the second edge bulges towards the side away from the geometric center of the resistor structure.

[0015] Optionally, both the first edge and the second edge are circular arcs and share the same center.

[0016] Optionally, the thin-film resistor further includes a first wire structure, a second wire structure, a first pad, and a second pad disposed on the same side as the resistor structure;

[0017] The first wire structure is electrically connected between the input end of the resistor structure and the first pad; the second wire structure is electrically connected between the output end of the resistor structure and the second pad.

[0018] Optionally, the first wire structure includes a first wire section; the first wire section is in contact with the input end of the resistor structure and has the same length and shape as the first edge;

[0019] The second wire structure includes a second wire section; the second wire section is in contact with the output end of the resistor structure and has the same length and shape as the second edge.

[0020] Optionally, the first wire structure further includes a third wire section connected to the first wire section;

[0021] In the direction parallel to the plane of the substrate, the third wire section is located on the side of the first wire section away from the resistor structure; the shape of the positive projection of the third wire section on the substrate is zigzag or curved.

[0022] Optionally, in the direction parallel to the plane of the substrate, the first pad and the second pad are located on the side of the input end of the resistor structure away from the output end of the resistor structure;

[0023] The thin-film resistor further includes a connecting metal layer, and the connecting metal layer is located on the side of the substrate away from the resistor structure; the substrate is provided with a plurality of through holes, and the connecting metal layer is electrically connected to the second wire structure and the second pad through the through holes respectively.

[0024] Optionally, the length difference between the longest current flow path and the shortest current flow path in the resistor structure is less than 200 μm.

[0025] Optionally, the current flow path in the resistor structure is less than or equal to 500 μm.

[0026] In a second aspect, the present invention provides a radio frequency circuit, including a first radio frequency signal transmission line and the thin film resistor provided in any embodiment of the present invention;

[0027] The thin film resistor is electrically connected between the first radio frequency signal transmission line and the signal output end of the radio frequency circuit; the impedance of the thin film resistor is consistent with the impedance of the first radio frequency signal transmission line.

[0028] In the technical solution of the embodiment of the present invention, by setting the length of the first edge where the input end of the resistor structure is located to be less than the length of the second edge where the output end of the resistor structure is located, and setting the projection shape of at least one of the first edge and the second edge to be arc-shaped, that is, designing the shape of the resistor structure to be sector-like, it is beneficial to reduce the length difference of the current flow paths at different positions, make the lengths of each current flow path basically the same, so as to make the lengths of each current flow path as close as possible to the shortest length, reduce the current flow paths generating parasitic inductance, be beneficial to reducing or even eliminating parasitic inductance, improving the impedance stability of the resistor structure, and further improving the impedance stability of the thin film resistor device, reducing the voltage standing wave ratio, and reducing the influence on the performance of the radio frequency circuit.

[0029] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can be obtained based on these drawings.

[0031] Figure 1 It is a partial top view structural schematic diagram of a thin film resistor provided by an embodiment of the present invention;

[0032] Figure 2 It is a partial top view structural schematic diagram of another thin film resistor provided by an embodiment of the present invention;

[0033] Figure 3 It is a partial top view structural schematic diagram of another thin film resistor provided by an embodiment of the present invention;

[0034] Figure 4 It is a top view structural schematic diagram of a thin film resistor provided by an embodiment of the present invention;

[0035] Figure 5 It is along Figure 4Schematic diagram of the local cross-sectional structure of the thin-film resistor intercepted by AA'

[0036] Figure 6 It is a schematic diagram of the circuit principle of a radio frequency circuit provided by an embodiment of the present invention. Detailed implementation manners

[0037] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0038] Without departing from the spirit or scope of the present application, various modifications and variations can be made in the present application, which will be obvious to those skilled in the art. Therefore, the present application is intended to cover the modifications and variations of the present application that fall within the scope of the corresponding claims (the claimed technical solutions) and their equivalents. It should be noted that the embodiments provided by the embodiments of the present application can be combined with each other without conflict.

[0039] First of all, it should be noted that unless otherwise defined, the technical terms or scientific terms used in the present invention should have the ordinary meaning understood by those of ordinary skill in the field to which the present invention belongs. The "first", "second" and similar terms used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. "Including" and its similar terms mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. "Connection" or "connected" and similar terms are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. Similar terms such as "upper", "lower", "left" and "right" are only used to represent relative positional relationships. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly. In addition, the shapes and sizes of the components in the drawings do not reflect the true proportions, and the purpose is only to schematically illustrate the content of the present invention.

[0040] Figure 1 It is a schematic diagram of the local top view structure of a thin-film resistor provided by an embodiment of the present invention, as Figure 1As shown in the figure, the thin-film resistor provided by the embodiment of the present invention includes a substrate 1 and a resistor structure 2 located on one side of the substrate 1; the orthographic projection of the resistor structure 2 on the substrate 1 includes opposite first edge E1 and second edge E2; the length of the first edge E1 is less than the length of the second edge E2, and the projection shape of at least one of the first edge E1 and the second edge E2 is arc-shaped; wherein, the first edge E1 is the edge where the input end of the resistor structure 2 is located, and the second edge E2 is the edge where the output end of the resistor structure 2 is located.

[0041] Among them, the resistor structure 2 is a metal thin film with a certain resistivity, such as tantalum nitride or nickel chromium, etc. The substrate is an insulating substrate, which can be a combination of one or more of alumina ceramics, sapphire, and silicon, or any other insulating material that can be used as a substrate. The embodiment of the present invention does not limit this.

[0042] Specifically, for the fabrication of the thin-film resistor, generally, a resistor material (the thickness of which is generally less than 1um) is deposited on the insulating substrate by semiconductor metal evaporation or metal sputtering process to form a thin film, and then the thin film is etched into a designed shape by photolithography and etching processes to obtain the resistor structure. Finally, conductive metal wires (abbreviated as wires) are evaporated or electroplated at both ends (i.e., the input end and the output end) of the resistor structure so that the resistor structure can be electrically connected to an external circuit to form a thin-film resistor device. Exemplarily, Figure 1 Only the resistor structure 2 on the substrate 1 is shown schematically. The current flow path in the resistor structure 2 (such as Figure 1 the dotted line with an arrow) i is from top to bottom, that is, the upper end is the input end of the resistor structure 2 and the lower end is the output end of the resistor structure 2 as an example for illustration. Subsequently, an exemplary description is made of the design of structures such as wires in the thin-film resistor.

[0043] The impedances of the resistor structure, wire structure, and pads, etc. inside the thin-film resistor all affect the final impedance of the thin-film resistor device. For the resistor structure 2, its parasitic capacitance and / or parasitic inductance affect the impedance stability of the resistor structure 2. To maintain the impedance stability of the resistor structure 2, it is necessary to reduce the parasitic capacitance and / or parasitic inductance of the resistor structure 2 during design.

[0044] To make the impedance of the resistor structure 2 reach a set impedance value, it is necessary to make the length of the resistor structure 2 in the current flow direction reach a certain length value. However, when current flows through an overly long resistor film, parasitic inductance will be generated. Exemplarily, referring to Figure 1As shown, the resistor structure 2 has a certain area, and multiple current flow paths i are dispersed on the resistor structure 2. If there is a current flow path that is too long, parasitic inductance will be generated. In this embodiment, by setting the length of the first edge E1 where the input end of the resistor structure 2 is located to be less than the length of the second edge E2 where the output end of the resistor structure 2 is located, and setting the projection shape of at least one of the first edge E1 and the second edge E2 to be arc-shaped, that is, designing the shape of the resistor structure 2 to be sector-like, it is beneficial to reduce the length difference of the current flow paths at different positions, make the lengths of each current flow path basically the same, so as to make the lengths of each current flow path as close as possible to the shortest length (which can be determined according to the impedance value), reduce the current flow paths that generate parasitic inductance, is beneficial to reducing or even eliminating parasitic inductance, improving the impedance stability of the resistor structure, and further improving the impedance stability of the thin-film resistor device, reducing the voltage standing wave ratio, and reducing the impact on the performance of the RF circuit.

[0045] As a feasible implementation manner, as Figure 1 shown, optionally, the projection shape of the first edge E1 is linear, and the projection shape of the second edge E2 is arc-shaped; the second edge E2 bulges towards the side away from the geometric center of the resistor structure 2. With such a setting, it is beneficial to make the lengths of the middle current flow path and the current flow paths on the left and right sides basically the same / have a small difference, make the lengths of each current flow path as close as possible to the shortest length, reduce parasitic inductance, improve the impedance stability of the resistor structure, and further improve the impedance stability of the thin-film resistor device, reduce the voltage standing wave ratio, and reduce the impact on the performance of the RF circuit.

[0046] In addition, Figure 2 is a partial top view structural schematic diagram of another thin-film resistor provided by an embodiment of the present invention. As Figure 2 shown, as another feasible implementation manner, optionally, the projection shape of the first edge E1 is arc-shaped, and the projection shape of the second edge E2 is linear; the first edge E1 bulges towards the side away from the geometric center of the resistor structure 2. With such a setting, it is also beneficial to make the lengths of the middle current flow path and the current flow paths on the left and right sides basically the same / have a small difference, make the lengths of each current flow path as close as possible to the shortest length, reduce parasitic inductance, improve the impedance stability of the resistor structure, and further improve the impedance stability of the thin-film resistor device, reduce the voltage standing wave ratio, and reduce the impact on the performance of the RF circuit.

[0047] In addition, Figure 3 is a partial top view structural schematic diagram of another thin-film resistor provided by an embodiment of the present invention. As Figure 3As shown, as yet another feasible implementation, optionally, the projected shapes of the first edge E1 and the second edge E2 are both arc-shaped; the first edge E1 is recessed toward the side close to the geometric center of the resistive structure 2, and the second edge E2 is convex toward the side away from the geometric center of the resistive structure 2. With such a setting, it is beneficial to further reduce the length difference between the current flow paths in the middle and those on the left and right sides, make the lengths of each current flow path as close as possible to the shortest length, reduce parasitic inductance, improve the impedance stability of the resistive structure, and thus improve the impedance stability of the thin-film resistor device, reduce the voltage standing wave ratio, and reduce the impact on the performance of the RF circuit.

[0048] Referring to Figure 3 , further optionally, both the first edge E1 and the second edge E2 are circular arcs and share the same center. With such a setting, the lengths of each current flow path can be kept consistent. By designing the radial length of the resistive structure 2 (i.e., the difference in the radius lengths of the circle where the second edge E2 is located and the circle where the first edge E1 is located) according to the set impedance value, the lengths of each current flow path can be basically the shortest length, avoiding the generation of parasitic inductance, improving the impedance stability of the resistive structure, and thus improving the impedance stability of the thin-film resistor device, reducing the voltage standing wave ratio, and reducing the impact on the performance of the RF circuit.

[0049] Optionally, the length difference between the longest current flow path and the shortest current flow path in the resistive structure is less than 200 μm. Preferably, the length difference between the longest current flow path and the shortest current flow path in the resistive structure is less than 100 μm. In this way, it is possible to avoid an excessive length difference between the longest current flow path and the shortest current flow path, which may lead to an increase in parasitic inductance, affect the impedance stability of the resistive structure, cause an increase in the voltage standing wave ratio, and increase the impact on the performance of the RF circuit.

[0050] Optionally, the current flow path in the resistive structure is less than or equal to 500 μm. Among them, 500 μm can be understood as a specific example of the above-mentioned shortest length. In this way, it is beneficial for the impedance value of the thin-film resistor to remain at 50 Ω, keep the impedance consistent with the RF transmission line with an impedance value of 50 Ω, reduce the voltage standing wave ratio, and reduce the impact on the performance of the RF circuit. Those skilled in the art can design the shortest current flow path of the resistive structure according to the actual RF circuit in use, and adopt the above solution to make the lengths of all current flow paths basically consistent with the length of the shortest current flow path, so as to improve the impedance stability of the thin-film resistor and reduce the impact on the performance of the RF circuit.

[0051] Optionally, the radian range of the arc shape is 45° to 90°, avoiding an increase in the voltage standing wave ratio caused by too small or too large an arc, and reducing the impact on the performance of the RF circuit.

[0052] In summary, in the embodiment of the present invention, by setting the length of the first edge where the input end of the resistor structure is located to be less than the length of the second edge where the output end of the resistor structure is located, and setting the projection shape of at least one of the first edge and the second edge to be arc-shaped, that is, designing the shape of the resistor structure to be fan-shaped, it is beneficial to reduce the length difference of the current flow paths at different positions, make the lengths of each current flow path basically the same, so as to make the lengths of each current flow path as close as possible to the shortest length, reduce the current flow paths that generate parasitic inductance, which is beneficial to reducing or even eliminating parasitic inductance, improving the impedance stability of the resistor structure, and further improving the impedance stability of the thin-film resistor device, reducing the voltage standing wave ratio, and reducing the impact on the performance of the RF circuit.

[0053] Figure 4 is a top view structural schematic diagram of a thin-film resistor provided by an embodiment of the present invention. As Figure 4 shown, the thin-film resistor further includes a first wire structure 3, a second wire structure 4, a first pad 5, and a second pad 6 disposed on the same side as the resistor structure 2; the first wire structure 3 is electrically connected between the input end of the resistor structure 2 and the first pad 5; the second wire structure 4 is electrically connected between the output end of the resistor structure 2 and the second pad 6. The thin-film resistor can be electrically connected to an external circuit through the first pad 5 and the second pad 6.

[0054] Figure 5 is a partial cross-sectional structural schematic diagram of the thin-film resistor taken along Figure 4 AA' in Figure 4 and Figure 5 shown. As a feasible implementation manner, optionally, along the direction parallel to the plane where the substrate 1 is located, the first pad 5 and the second pad 6 are located on the side where the input end of the resistor structure 2 is far from the output end of the resistor structure 2; the thin-film resistor 10 further includes a connecting metal layer (back gold) 7, and the connecting metal layer 7 is located on the side of the substrate 1 far from the resistor structure 2; the substrate 1 is provided with a plurality of through holes 8, and the connecting metal layer 7 is electrically connected to the second wire structure 4 and the second pad 6 through the through holes 8 respectively.

[0055] When the thin-film resistor adopts this structural design, a capacitive structure (parasitic capacitance) is formed between the input end of the resistor structure 2 and the output end connected to the connecting metal layer 7. It is found that reducing the length of the input end of the resistor structure 2 can reduce the parasitic capacitance. However, when the input end is too narrow (the length is too small), the current density at the resistor input end will rise sharply, resulting in its inability to withstand high-power energy, and it is difficult to balance the two.

[0056] Therefore, when the resistor structure adopts the traditional rectangular design, if the length of the input end and the input end of the rectangular resistor is reduced to reduce the parasitic capacitance, and the distance between the input end and the output end of the rectangular resistor is reduced to reduce the parasitic inductance, that is, the overall size of the rectangular resistor is reduced, it will cause the rectangular resistor to be unable to withstand high-power energy, with poor heat dissipation effect and easy to burn out. In addition, it will also cause the parasitic parameters of the input metal arm (the wire connected to the input end of the resistor structure) and the pad to become the main influence, making it difficult to improve the problem of unstable impedance of the thin-film resistor, difficult to reduce the voltage standing wave ratio, and difficult to reduce the influence on the performance of the RF circuit. Further, if only the length of the input end is reduced and the length of the output end is kept unchanged, that is, a trapezoidal resistor structure is formed, although the parasitic capacitance can be reduced, it will cause too large a difference in the current flow path, resulting in an increase in parasitic inductance, and it is also difficult to solve the problem of unstable impedance of the thin-film resistor.

[0057] In view of this, in the technical solution of the embodiment of the present invention, by setting the length of the first edge where the input end of the resistor structure is located to be less than the length of the second edge where the output end is located, and setting the projection shape of at least one of the first edge and the second edge to be arc-shaped, on the one hand, the influence of parasitic inductance on impedance stability can be reduced through the design of the quasi-sector-shaped resistor structure (the principle is described in detail above). On the other hand, by appropriately reducing the length of the first edge where the input end is located, while ensuring the current-carrying capacity of the thin-film resistor and the ability of the thin-film resistor to withstand high-power energy, the parasitic capacitance can be reduced, and the influence of parasitic capacitance on impedance stability can be reduced. Exemplarily, the length of the first edge where the input end is located can be adaptively designed according to the magnitude of the current to be carried, and the embodiment of the present invention does not limit this. It should be noted that for the arc-shaped edge, its length specifically refers to the arc length corresponding to this edge.

[0058] Continue to refer to Figure 4 and Figure 5 , optionally, the first wire structure 3 includes a first wire section 31, the first wire section 31 is in contact with the input end of the resistor structure 2 and is consistent with the length and shape of the first edge E1; the second wire structure 4 includes a second wire section 41, the second wire section 41 is in contact with the output end of the resistor structure 2 and is consistent with the length and shape of the second edge E2.

[0059] Refer to Figure 5, the first wire section 31 can be understood as the part of the first wire structure 3 that contacts the input end of the resistor structure 2, and the second wire section 41 can be understood as the part of the second wire structure 4 that contacts the output end of the resistor structure 2. In this embodiment, by setting the length and shape of the first wire section 31 to be the same as those of the first edge E1, and setting the length and shape of the second wire section 41 to be the same as those of the second edge E2, it can ensure that the current is evenly distributed across the entire resistor structure 2, improving the tolerance of the thin-film resistor to large currents and high-power energy.

[0060] It should be noted that, Figure 4 only taking the projected shape of the first edge E1 as a straight line and the projected shape of the second edge E2 as an arc as an example for illustration; correspondingly, the projected shape of the first wire section 31 is a straight line and is equal in length to the first edge E1, and the projected shape of the second wire section 41 is an arc and is equal in length (arc length) to the second edge E2; for Figure 2 and Figure 3 the top-view shape of the resistor structure 2 shown, the shapes and lengths of the first wire section 31 and the second wire section 41 can be adaptively designed, which will not be elaborated one by one here.

[0061] As Figure 4 shown, the first wire structure 3 further includes a third wire section 32 connected to the first wire section 31; optionally, along the direction parallel to the plane where the substrate 1 is located, the third wire section 32 is located on the side of the first wire section 31 away from the resistor structure 2; the shape of the positive projection of the third wire section 32 on the substrate 1 is a broken line or a curve.

[0062] Specifically, the first wire section 31 and the second wire section 32 are integrally formed to constitute the first wire structure 3, and the end of the third conductive section 32 is electrically connected to the first pad 5. Referring to Figure 5 , in view of the fact that the resistor structure 2 is a thin-film resistor, a relatively large capacitance can be formed between the resistor structure 2 and the connecting metal layer 7. Therefore, the parasitic capacitance is a parasitic parameter that has a relatively greater impact in the thin-film resistor. In this embodiment, by setting the projected shape of the third wire section 32 (which can be understood as the above-mentioned input-end metal arm) to be a broken line or a curve, it is beneficial to increase the length of the input-end metal arm within a limited space, and balance the parasitic capacitance of the resistor through the inductance generated by it, further improving the impedance stability of the thin-film resistor, reducing the voltage standing wave ratio, and reducing the impact on the performance of the RF circuit.

[0063] Based on the same inventive concept, an embodiment of the present invention further provides a radio frequency circuit. Figure 6 is a schematic circuit diagram of a radio frequency circuit provided by an embodiment of the present invention. As Figure 6As shown, the radio frequency circuit 100 includes a first radio frequency signal transmission line 101 and a thin film resistor 10 provided in any embodiment of the present invention; the thin film resistor 10 is electrically connected between the first radio frequency signal transmission line 101 and the signal output terminal 102 of the radio frequency circuit, and the other end of the first radio frequency signal transmission line 101 is electrically connected to a front-end circuit module 103 in the radio frequency circuit, and the impedance of the thin film resistor 10 is consistent with the impedance of the first radio frequency signal transmission line 101. Specifically, the design parameters of the resistor structure in the thin film resistor can be determined according to the parameters of the radio frequency circuit in which the thin film resistor is actually applied, and the embodiments of the present invention do not limit this. Since the radio frequency circuit adopts the thin film resistor provided in any of the above embodiments, the influence of the thin film resistor on the performance of the radio frequency circuit is relatively low, the circuit performance can be effectively guaranteed, and at the same time, the thin film resistor can be used as a load resistor to effectively absorb the excess energy in the radio frequency circuit.

[0064] The above specific embodiments do not constitute a limitation to the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A thin-film resistor, characterized in that, Comprising: a substrate and a resistive structure located on one side of the substrate; the orthographic projection of the resistive structure on the substrate includes opposite first and second edges; the length of the first edge is less than the length of the second edge, and the projection shape of at least one of the first edge and the second edge is arc-shaped; wherein, the first edge is the edge where the input end of the resistive structure is located, and the second edge is the edge where the output end of the resistive structure is located.

2. The thin film resistor according to claim 1, characterized in that, The projection shape of the first edge is linear, and the projection shape of the second edge is arc-shaped; The second edge bulges towards the side away from the geometric center of the resistive structure.

3. The thin film resistor according to claim 1, characterized in that, The projection shape of the first edge is arc-shaped, and the projection shape of the second edge is linear; The first edge bulges towards the side away from the geometric center of the resistive structure.

4. The thin film resistor according to claim 1, wherein The projection shapes of the first edge and the second edge are both arc-shaped; The first edge is recessed towards the side close to the geometric center of the resistive structure, and the second edge bulges towards the side away from the geometric center of the resistive structure.

5. The thin film resistor according to claim 4, wherein, Both the first edge and the second edge are circular arcs and share the same center.

6. The thin film resistor according to claim 1, wherein The thin film resistor further includes a first wire structure, a second wire structure, a first pad, and a second pad disposed on the same side as the resistive structure; The first wire structure is electrically connected between the input end of the resistive structure and the first pad; the second wire structure is electrically connected between the output end of the resistive structure and the second pad.

7. The thin film resistor according to claim 6, characterized in that, The first wire structure includes a first wire section; the first wire section is in contact with the input end of the resistive structure and is consistent with the length and shape of the first edge; The second wire structure includes a second wire section; the second wire section is in contact with the output end of the resistive structure and is consistent with the length and shape of the second edge.

8. The thin film resistor according to claim 7, characterized in that, The first wire structure further includes a third wire section connected to the first wire section; Along the direction parallel to the plane where the substrate is located, the third wire section is located on the side of the first wire section away from the resistive structure; the shape of the orthographic projection of the third wire section on the substrate is zigzag or curved.

9. The thin film resistor according to claim 7, wherein Along the direction parallel to the plane where the substrate is located, the first pad and the second pad are located on the side of the input end of the resistive structure away from the output end of the resistive structure; The thin film resistor further includes a connecting metal layer, the connecting metal layer is located on the side of the substrate away from the resistive structure; the substrate is provided with a plurality of through holes, and the connecting metal layer is electrically connected to the second wire structure and the second pad through the through holes respectively.

10. The thin film resistor according to claim 1, characterized in that, The length difference between the longest current flow path and the shortest current flow path in the resistive structure is less than 200 μm.

11. The thin film resistor according to claim 1, characterized in that, The current flow path in the resistive structure is less than or equal to 500 μm.

12. A radio frequency circuit, characterized in that, Comprising a first radio frequency signal transmission line and the thin film resistor according to any one of claims 1-11; The thin film resistor is electrically connected between the first radio frequency signal transmission line and the signal output end of the radio frequency circuit; the impedance of the thin film resistor is consistent with the impedance of the first radio frequency signal transmission line.

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