Multilayer electronic component

Abstract

The present disclosure provides a multilayer electronic component including a body including a dielectric layer and an inner electrode including Ni and a Ni-containing oxide, and an outer electrode including a dielectric layer and an inner electrode including Ni and a Ni-containing oxide, when the ratio of the area of the Ni-containing oxide included in a central portion in a cross-section in the first direction and the third direction of the main body to the total area of the central portion is defined as SC, the ratio of the area of the Ni-containing oxide included in the central portion is less than the total area of the central portion. And when the ratio of the area of the Ni-containing oxide included in the side portions in the first and third direction cross-sections of the body to the total area of the side portions is defined as SMT, 0.9 lt is satisfied; an SMT / SClt; 1.1, thereby improving the mechanical strength and pressure resistance of the multilayer electronic component.

Description

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2023-0194476, filed with the Korean Intellectual Property Office on December 28, 2023, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0002] The present disclosure relates to a multi-layer electronic component. Background Art

[0003] A multi-layer ceramic capacitor (MLCC), a type of multi-layer electronic component, is a chip capacitor that is mounted on a printed circuit board of various types of electronic products (such as image display devices including liquid crystal displays (LCDs) and plasma display panels (PDPs), computers, smart phones, and mobile phones) and is used to charge or discharge electricity therefrom.

[0004] Currently, with the miniaturization of electronic devices, there are increasing demands for the miniaturization and high integration of multi-layer electronic components. Specifically, in the case of multi-layer ceramic capacitors (MLCCs) as general electronic components, various attempts have been made to make MLCCs thinner and have higher capacitance.

[0005] As multi-layer electronic components are manufactured to be thinner and have higher capacitance, the reliability of multi-layer electronic components often deteriorates. Therefore, it is necessary to improve the structure of the dielectric layer or the internal electrode so that the reliability does not deteriorate even in miniaturized, high-capacitance multi-layer electronic components. Summary of the Invention

[0006] One aspect of the present disclosure is to suppress the deterioration of the reliability and mechanical strength of a multi-layer electronic component due to the thinning of the dielectric layer or the internal electrode.

[0007] However, aspects of the present disclosure are not limited to the above, and will be more easily understood during the description of specific embodiments of the present disclosure.

[0008] A multi-layer electronic component according to an exemplary embodiment of the present disclosure may include: a body including a dielectric layer and inner electrodes, the inner electrodes including first inner electrodes and second inner electrodes alternately arranged in a first direction, and the dielectric layer being interposed between the first inner electrodes and the second inner electrodes; and outer electrodes respectively provided on surfaces of the body opposite to each other in a second direction perpendicular to the first direction. The inner electrodes may include Ni-containing oxides and Ni. A region where the first inner electrodes and the second inner electrodes are stacked on each other in the first direction is defined as a capacitance forming portion. In a cross-section of the body in the first direction and a third direction, the capacitance forming portion may include a central portion provided at the center of the capacitance forming portion in the first direction and the third direction, and side portions provided at upper and lower portions of the capacitance forming portion in the first direction and at two side surfaces of the capacitance forming portion in the third direction. The third direction is perpendicular to the first direction and the second direction. When a ratio of an area of the Ni-containing oxide included in the central portion to a total area of the central portion is defined as SC, and a ratio of an area of the Ni-containing oxide included in the side portions to an area of the side portions is defined as SMT, 0.9 < SMT / SC < 1.1 may be satisfied.

[0009] One of the various effects of the present disclosure is to uniformly form Ni-containing oxides on the inner electrodes by controlling the oxidation degree of the inner electrodes, thereby improving the reliability and mechanical strength of the multi-layer electronic component.

[0010] The advantages and effects of the present disclosure are not limited to the foregoing, and may be more easily understood during the process of describing specific exemplary embodiments of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Through the following specific embodiments in conjunction with the drawings, the above and other aspects, features, and advantages of the present disclosure will be more clearly understood. In the drawings: Figure 1 is a schematic perspective view of a multi-layer electronic component according to an exemplary embodiment of the present disclosure; Figure 2 is a cross-sectional view taken along line I-I' of Figure 1 ; Figure 3 is an image of a capacitance forming portion according to an exemplary embodiment captured by a scanning electron microscope (SEM); Figure 4 is Figure 2 a schematic enlarged view of the P1 region of Figure 5 is a cross-sectional view taken along line II-II' of Figure 1 ; Figure 6 is a cross-sectional view taken along line Figure 1Cross-sectional view taken along line III-III'; Figure 7 is taken along Figure 1 Cross-sectional view taken along line IV-IV'; Figure 8 is a schematic exploded perspective view of the main body according to the exemplary embodiment; Figure 9 is an image of the change in the size of the dielectric grains of the dielectric layer observed by a scanning electron microscope (SEM) according to the ratio of the area of the Ni-containing oxide included in the capacitance forming portion to the area of the capacitance forming portion; and Figure 10 is a graph showing the capacitance and breakdown voltage characteristics according to the ratio of the area of the Ni-containing oxide included in the capacitance forming portion to the area of the capacitance forming portion. Detailed Description

[0012] Hereinafter, exemplary embodiments of the present disclosure will be described with reference to specific exemplary embodiments and the drawings. However, the exemplary embodiments of the present disclosure can be illustrated in many different forms and should not be construed as limited to the specific embodiments set forth herein. The exemplary embodiments provided herein are for a better understanding of the present disclosure by those skilled in the art. Therefore, in the drawings, for clarity, the shapes and sizes of the elements may be exaggerated, and the same or similar reference numerals will always be used to denote the same or similar elements.

[0013] In addition, in order to clearly describe the present disclosure in the drawings, content irrelevant to the description is omitted, and since the dimensions (e.g., thickness) of each component shown in the drawings are arbitrarily shown for ease of description, the present disclosure is not limited thereto. In addition, the same reference numerals are used to describe components having the same functions within the scope of the same concept. Throughout the specification, unless otherwise stated, when a part "includes" or "comprises" a certain component, this indicates that other components are not excluded and other components may be further included.

[0014] In the drawings, the first direction may be defined as the direction or thickness (T) direction in which the first inner electrode and the second inner electrode are alternately arranged and the dielectric layer is interposed therebetween, and the second direction among the second direction and the third direction perpendicular to the first direction may be defined as the length (L) direction, and the third direction may be defined as the width (W) direction.

[0015] According to some example embodiments of the present disclosure, a multilayer electronic component 100 may include: a main body 110 including a dielectric layer 111 and internal electrodes 121 and 122, the internal electrodes 121 and 122 including first internal electrodes 121 and second internal electrodes 122 alternately arranged in a first direction, and the dielectric layer being interposed between the first internal electrodes 121 and the second internal electrodes 122; and external electrodes 130 and 140 respectively provided on surfaces of the main body that are opposite to each other in a second direction perpendicular to the first direction, the internal electrodes including Ni oxide and Ni (i.e., Ni other than Ni in the Ni oxide), a region where the first internal electrodes and the second internal electrodes are stacked on each other in the first direction is defined as a capacitance forming portion Ac, and in a cross-section of the main body in the first direction and a third direction, the capacitance forming portion includes a central portion C1 provided at the center of the capacitance forming portion in the first direction and the third direction and side portions T1-1, T1-2, M1-1, and M1-2 provided at upper and lower portions of the capacitance forming portion in the first direction and at two side surfaces of the capacitance forming portion in the third direction. When a ratio of an area of the Ni oxide included in the central portion to an area of the central portion (i.e., total area) is defined as SC and a ratio of an area of the Ni oxide included in the side portions to an area of the side portions (i.e., total area) is defined as SMT, 0.9 < SMT / SC < 1.1 may be satisfied.

[0016] The main body 110 may include a dielectric layer 111 and internal electrodes 121 and 122 alternately arranged in a first direction, and the dielectric layer 111 is interposed between the internal electrodes 121 and 122.

[0017] The specific shape of the main body 110 is not particularly limited, but as Figure 1 shown, the main body 110 may have a hexahedron shape or a shape similar to a hexahedron shape. Due to shrinkage of ceramic particles included in the main body 110 during a sintering process, the main body 110 may not have a completely straight hexahedron shape but may have a substantially hexahedron shape.

[0018] The main body 110 may include a first surface 1 and a second surface 2 opposite to each other in the first direction, a third surface 3 and a fourth surface 4 connected to the first surface 1 and the second surface 2 and opposite to each other in a second direction, and a fifth surface 5 and a sixth surface 6 connected to the first surface 1 and the second surface 2 and connected to the third surface 3 and the fourth surface 4 and opposite to each other in a third direction.

[0019] In a state where a plurality of dielectric layers 111 are sintered, adjacent dielectric layers 111 may be integrated such that it is difficult to identify a boundary between adjacent dielectric layers 111 without using a scanning electron microscope (SEM).

[0020] According to some example embodiments of the present disclosure, the material for forming the dielectric layer 111 is not particularly limited as long as sufficient electrostatic capacitance can be obtained therefrom. For example, barium titanate-based materials, lead composite perovskite-based materials, strontium titanate-based materials, etc. may be used. The barium titanate-based materials may include BaTiO3-based ceramic particles, and examples of the BaTiO3-based ceramic particles may include those selected from the group consisting of BaTiO3 and (Ba 1-x Ca x )TiO3 (0 < x < 1), Ba(Ti 1-y Ca y )O3 (0 < y < 1), (Ba 1-x Ca x )(Ti 1-y Zr y )O3 (0 < x < 1, 0 < y < 1), and Ba(Ti 1-y Zr y )O3 (0 < y < 1).

[0021] In addition, for the material for forming the dielectric layer 111, various ceramic additives, organic solvents, binders, dispersants, etc. may be added to particles such as barium titanate (BaTiO3) according to the purpose of the present disclosure.

[0022] In addition, the average thickness td of the dielectric layer 111 does not need to be particularly limited. For example, the average thickness td of the dielectric layer 111 may be greater than or equal to 0.2 μm and less than or equal to 2 μm.

[0023] When the dielectric layer 111 is formed as a thin film, such as when the average thickness td of the dielectric layer 111 is less than or equal to 0.35 μm, the reliability of the multilayer electronic component 100 may be reduced.

[0024] However, the multi-layer electronic component 100 according to an exemplary embodiment of the present disclosure may include an inner electrode including Ni and Ni-containing oxide, and in a first direction and a third direction cross-section of the main body 110, the capacitance forming portion may include a central portion C1 disposed at the center of the capacitance forming portion in the first direction and the third direction, and side portions T1-1, T1-2, M1-1, and M1-2 disposed at upper and lower portions of the capacitance forming portion in the first direction and at two side surfaces of the capacitance forming portion in the third direction. When the ratio of the area of the Ni-containing oxide included in the central portion to the area of the central portion is defined as SC and the ratio of the area of the Ni-containing oxide included in the side portion to the area of the side portion is defined as SMT, the reliability of the multi-layer electronic component may be improved by satisfying 0.9 < SMT / SC < 1.1. Therefore, even when the average thickness td of the dielectric layer 111 is less than or equal to 0.35 μm, the reliability of the multi-layer electronic component 100 can be ensured. That is, when the average thickness td of the dielectric layer 111 is less than or equal to 0.35 μm, the reliability improvement effect according to the present disclosure may be more significant.

[0025] The average thickness td of the dielectric layer 111 may refer to the average thickness td of the dielectric layer 111 disposed between the adjacent first inner electrode 121 and the second inner electrode 122.

[0026] The average thickness td of the dielectric layer 111 may be measured by an image obtained by scanning a cross-section in the length and thickness (L-T) directions of the main body 110 with a scanning electron microscope (SEM) having a magnification of 10,000 times. More specifically, the average thickness td of the dielectric layer 111 may be obtained by measuring the thicknesses at a plurality of points (e.g., 30 points equally spaced from each other in the length direction) of one dielectric layer from the scanned image and calculating their average value. Thirty points equally spaced from each other may be specified in the capacitance forming portion Ac. In addition, when the average value is measured by extending the measurement to 10 dielectric layers 111, the average thickness of the dielectric layer 111 may be more generalized.

[0027] The main body 110 may include a capacitance forming portion Ac, and covering portions 112 and 113 formed on upper and lower portions of the capacitance forming portion Ac in the first direction. The capacitance forming portion Ac is a region where the first inner electrode 121 and the second inner electrode 122 are stacked on each other in the first direction.

[0028] In addition, the capacitance forming portion Ac is a part that contributes to the formation of the capacitance of the capacitor, and may be formed by repeatedly stacking a plurality of first inner electrodes 121 and a plurality of second inner electrodes 122 with the dielectric layer 111 interposed therebetween.

[0029] The covering parts 112 and 113 may include an upper covering part 112 disposed on one surface of the capacitor forming part Ac in the first direction and a lower covering part 113 disposed on the other surface of the capacitor forming part Ac in the first direction.

[0030] The covering parts 112 and 113 may be formed by stacking a single dielectric layer or two or more dielectric layers in the thickness direction on the upper surface and the lower surface of the capacitor forming part Ac, respectively, and may be substantially used to prevent damage to the internal electrodes due to physical stress or chemical stress.

[0031] The covering parts 112 and 113 do not include internal electrodes and may include the same material as the dielectric layer 111.

[0032] That is, the covering parts 112 and 113 may include a ceramic material, and may include, for example, a barium titanate (BaTiO3)-based ceramic material.

[0033] In addition, the average thickness of the covering parts 112 and 113 does not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average thickness tc of the covering parts 112 and 113 may be less than or equal to 15 μm. In addition, the multilayer electronic component 100 according to an exemplary embodiment of the present disclosure may include internal electrodes including Ni and Ni-containing oxides, and in a first direction and a third direction cross-section of the main body 110, the capacitor forming part may include a central part C1 disposed at the center of the capacitor forming part in the first direction and the third direction and side parts T1-1, T1-2, M1-1, and M1-2 disposed at the upper and lower parts of the capacitor forming part in the first direction and at two side surfaces of the capacitor forming part in the third direction. When the ratio of the area of the Ni-containing oxide included in the central part to the area of the central part is defined as SC and the ratio of the area of the Ni-containing oxide included in the side parts to the area of the side parts is defined as SMT, the reliability of the multilayer electronic component may be improved by satisfying 0.9 < SMT / SC < 1.1. Therefore, even when the average thickness tc of the covering part is less than or equal to 15 μm, the reliability of the multilayer electronic component 100 can be ensured.

[0034] The average thickness of the covering parts 112 and 113 may refer to the dimension in the first direction and may be the average value of the dimensions in the first direction of the covering parts 112 and 113 measured at five points equidistantly spaced from each other on the upper part or the lower part of the capacitor forming part Ac.

[0035] The edge parts 114 and 115 may be disposed on the side surfaces of the capacitor forming part Ac.

[0036] The edge portions 114 and 115 may include an edge portion 114 provided on one side surface of the capacitor forming portion Ac in the third direction (adjacent to the fifth surface 5 of the main body 110) and an edge portion 115 provided on the other side surface of the capacitor forming portion Ac in the third direction (adjacent to the sixth surface 6 of the main body 110). That is, the edge portions 114 and 115 may be provided on two side surfaces of the capacitor forming portion Ac in the third direction (width direction).

[0037] As Figure 5 shown, the edge portions 114 and 115 may refer to the regions between the ends of the first inner electrode 121 and the second inner electrode 122 and the outer surface of the main body 110 in a cross section obtained by cutting the main body 110 in the width-thickness (W-T) direction.

[0038] The edge portions 114 and 115 may be substantially used to prevent damage to the inner electrodes due to physical stress or chemical stress.

[0039] The edge portions 114 and 115 may be formed by applying a conductive paste to regions of the green sheet other than the regions where the edge portions are to be formed to form the inner electrodes.

[0040] In addition, in order to suppress the step difference caused by the inner electrodes 121 and 122, the edge portions 114 and 115 may be formed by stacking green sheets coated with a conductive paste to form a laminate, then cutting the laminate to expose the inner electrodes to two side surfaces of the capacitor forming portion Ac, and then stacking a single dielectric layer or two or more dielectric layers in the third direction (width direction) on the two side surfaces of the capacitor forming portion Ac.

[0041] In addition, the widths of the edge portions 114 and 115 do not need to be particularly limited. However, in order to more easily achieve miniaturization and high capacitance of the multilayer electronic component, the average widths of the edge portions 114 and 115 can be less than or equal to 15 μm. Additionally, the multilayer electronic component 100 according to some exemplary embodiments of the present disclosure may include inner electrodes, the inner electrodes including Ni and Ni-containing oxides, and in a cross-section of the main body 110 in the first direction and the third direction, the capacitance forming portion may include a central portion C1 provided at the center of the capacitance forming portion in the first direction and the third direction, and side portions T1-1, T1-2, M1-1, and M1-2 provided at the upper and lower portions of the capacitance forming portion in the first direction and at the two side surfaces of the capacitance forming portion in the third direction. When the ratio of the area of the Ni-containing oxide included in the central portion to the area of the central portion is defined as SC and the ratio of the area of the Ni-containing oxide included in the side portion to the area of the side portion is defined as SMT, the reliability of the multilayer electronic component can be improved by satisfying 0.9 < SMT / SC < 1.1. Therefore, even when the average widths of the edge portions 114 and 115 are less than or equal to 15 μm, the reliability of the multilayer electronic component 100 can be ensured.

[0042] The average widths of the edge portions 114 and 115 may refer to the average dimensions of the edge portions 114 and 115 in the third direction, and may be the average value of the third direction dimensions of the edge portions 114 and 115 measured at five points equidistantly spaced from each other on the side surface of the capacitance forming portion Ac.

[0043] The inner electrodes 121 and 122 may be alternately arranged with the dielectric layer 111 in the first direction.

[0044] The inner electrodes 121 and 122 may include a first inner electrode 121 and a second inner electrode 122. The first inner electrode 121 and the second inner electrode 122 may be alternately arranged opposite to each other, with the dielectric layer 111 interposed between the first inner electrode 121 and the second inner electrode 122, and the first inner electrode 121 and the second inner electrode 122 may be respectively connected to the third surface 3 and the fourth surface 4 of the main body 110. Specifically, one end of the first inner electrode 121 may be connected to the third surface, and one end of the second inner electrode 122 may be connected to the fourth surface.

[0045] The first inner electrode 121 may be spaced apart from the fourth surface 4 and may be exposed through the third surface 3, and the second inner electrode 122 may be spaced apart from the third surface 3 and may be exposed through the fourth surface 4. The first outer electrode 130 may be provided on the third surface 3 of the main body and may be connected to the first inner electrode 121, and the second outer electrode 140 may be provided on the fourth surface 4 of the main body and may be connected to the second inner electrode 122.

[0046] That is to say, the first inner electrode 121 can be connected to the first outer electrode 130 without being connected to the second outer electrode 140, and the second inner electrode 122 can be connected to the second outer electrode 140 without being connected to the first outer electrode 130. Therefore, the first inner electrode 121 can be formed at a certain distance from the fourth surface 4, and the second inner electrode 122 can be formed at a certain distance from the third surface 3.

[0047] In this case, the first inner electrode 121 and the second inner electrode 122 can be electrically separated from each other by the dielectric layer 111 provided therebetween.

[0048] The main body 110 can be formed by alternately stacking ceramic green sheets printed with the conductive paste for forming the first inner electrode 121 and ceramic green sheets printed with the conductive paste for forming the second inner electrode 122 and then sintering the ceramic green sheets.

[0049] The materials for forming the inner electrodes 121 and 122 are not particularly limited, and materials with excellent conductivity can be used. For example, the inner electrodes 121 and 122 can include one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and their alloys.

[0050] In addition, the inner electrodes 121 and 122 can be formed by printing the conductive paste for the inner electrodes on the ceramic green sheets. The conductive paste for the inner electrodes includes one or more selected from the group consisting of nickel (Ni), copper (Cu), palladium (Pd), silver (Ag), gold (Au), platinum (Pt), tin (Sn), tungsten (W), titanium (Ti), and their alloys. The method of printing the conductive paste for the inner electrodes can use the screen printing method or the gravure printing method, but the present invention is not limited thereto.

[0051] In addition, the average thickness te of the inner electrodes 121 and 122 does not need to be particularly limited. For example, the average thickness te of the inner electrodes 121 and 122 can be greater than or equal to 0.2 μm and less than or equal to 2 μm.

[0052] When the average thickness of the inner electrodes 121 and 122 is less than or equal to 0.35 μm, it may be difficult to ensure the connectivity of the inner electrodes. However, since the inner electrodes 121 and 122 according to the exemplary embodiments of the present disclosure can include Ni oxide and Ni and can satisfy 0.9 < SMT / SC < 1.1, even when the average thickness of the inner electrodes 121 and 122 is less than or equal to 0.35 μm, the connectivity of the inner electrodes can be ensured.

[0053] The average thickness te of the inner electrodes 121 and 122 can refer to the average thickness te of the inner electrodes 121 and 122 in the first direction.

[0054] The average thickness te of the inner electrodes 121 and 122 can be measured from an image obtained by scanning a cross-section of the main body 110 in the length and thickness (L-T) directions with a scanning electron microscope (SEM) at a magnification of 10,000 times. More specifically, the average thickness of the inner electrode can be obtained by measuring the thicknesses at a plurality of points (for example, 30 points equally spaced from each other in the length direction) of one inner electrode from the scanned image and calculating the average value. 30 points equally spaced from each other can be specified in the capacitance forming portion Ac. In addition, when the average value is measured by extending it to 10 inner electrodes, the average thickness of the inner electrode can be made more general.

[0055] Due to the high capacitance of the multilayer electronic component and the thinning of the inner electrode and the dielectric layer, there may be a problem that the interfacial strength between the inner electrode and the dielectric layer may decrease, which may lead to a decrease in the mechanical strength of the multilayer electronic component.

[0056] In addition, there may be a problem that the withstand voltage characteristics of the multilayer electronic component deteriorate due to the thinning of the dielectric layer.

[0057] Therefore, in some exemplary embodiments of the present disclosure, the inner electrodes 121 and 122 may include Ni and Ni-containing oxides, and the distribution of the Ni-containing oxides may be controlled to improve the mechanical strength and withstand voltage characteristics of the multilayer electronic component.

[0058] Figure 3 An inner electrode included in the capacitance forming portion is shown, and the gray area depicts a region including an oxide or a Ni-containing oxide, and the white portion depicts a region including Ni. Refer to Figure 3 , the inner electrode may include Ni and Ni-containing oxides, and it can be confirmed that the Ni-containing oxides are not concentrated in a specific region of the capacitance forming portion, but are uniformly distributed. As an example, the Ni-containing oxide may be an oxide formed by oxidizing Ni with O, for example, may include at least one of NiO, Ni2O3, and Ni3O4, but is not limited thereto.

[0059] Refer to Figure 6 , in the cross-sections of the main body in the first direction and the third direction, the capacitance forming portion Ac may include a central portion C1 provided at the center of the capacitance forming portion Ac in the first direction and the third direction, and side portions T1-1, T1-2, M1-1, and M1-2 provided at the upper and lower portions of the capacitance forming portion Ac in the first direction and at the two side surfaces of the capacitance forming portion Ac in the third direction.

[0060] In this case, in some exemplary embodiments of the present disclosure, when the ratio of the area of the Ni-containing oxide included in the central portion C1 to the area of the central portion C1 is defined as SC, and the ratio of the area of the Ni-containing oxide included in the side portions T1-1, T1-2, M1-1, and M1-2 to the area of the side portions T1-1, T1-2, M1-1, and M1-2 is defined as SMT, 0.9 < SMT / SC < 1.1 can be satisfied.

[0061] When 0.9 < SMT / SC < 1.1 is not satisfied, the Ni-containing oxide may not be uniformly distributed on the inner electrodes 121 and 122, but may be locally formed on the inner electrodes 121 and 122, which may weaken the mechanical strength and voltage withstand characteristics of the multilayer electronic component 100.

[0062] Therefore, in some exemplary embodiments of the present disclosure, 0.9 < SMT / SC < 1.1 can be controlled to be satisfied, and the Ni-containing oxide can be uniformly distributed on the inner electrodes 121 and 122, thereby improving the mechanical strength and voltage withstand characteristics of the multilayer electronic component 100.

[0063] In some exemplary embodiments, referring to Figure 6 , the central portion C1 may refer to: the region located at the center in the first direction and the third direction in the region formed by dividing the capacitor forming portion Ac into five equal parts in the first direction and five equal parts in the third direction, and the side portions T1-1, T1-2, M1-1, and M1-2 may refer to: the regions M1-1 and M1-2 that are in contact with the two end surfaces (two side surfaces) of the capacitor forming portion Ac in the third direction and are located at the center in the first direction, and the regions T1-1 and T1-2 that are in contact with the two end surfaces (the upper surface and the lower surface) of the capacitor forming portion Ac in the first direction and are located at the center in the third direction in the region formed by dividing the capacitor forming portion Ac into five equal parts in the first direction and five equal parts in the third direction. That is to say, the area of each of the central portion C1 and the side portions T1-1, T1-2, M1-1, and M1-2 may vary according to the size of the multilayer electronic component 100 or the area of the capacitor forming portion Ac. However, in the multilayer electronic components with substantially the same area of the capacitor forming portion Ac, the area of each of the central portion C1 and the side portions T1-1, T1-2, M1-1, and M1-2 may be substantially the same as each other.

[0064] In addition, in the region formed by dividing the capacitor forming portion Ac into five equal parts in the first direction and five equal parts in the third direction, regions M1-1 and M1-2 that are in contact with both ends of the capacitor forming portion Ac in the third direction and are provided at the center in the first direction can be defined as the edge side portions, and regions T1-1 and T1-2 that are in contact with both ends of the capacitor forming portion Ac in the first direction and are provided at the center in the third direction can be defined as the covering side portions. In addition, Figure 6 The cross-section taken along line III-III' shown in Figure 1 can correspond to the first direction and third direction cross-sections polished to the 1 / 2 point of the main body 110 in the second direction.

[0065] In some exemplary embodiments, when the ratio of the area of the Ni-containing oxide included in the covering side portions T1-1 and T1-2 to the area of the covering side portions T1-1 and T1-2 is defined as ST and the ratio of the area of the Ni-containing oxide included in the edge side portions M1-1 and M1-2 to the area of the edge side portions M1-1 and M1-2 is defined as SM, 0.9 < ST / SC < 1.1 and 0.9 < SM / SC < 1.1 can be satisfied. Therefore, by more uniformly distributing the Ni-containing oxide in the capacitor forming portion Ac, the reliability and withstand voltage characteristics of the multilayer electronic component 100 can be further improved.

[0066] Figure 5 Corresponding to the cross-section taken along line II-II' shown in Figure 1 the cross-section, Figure 6 Corresponding to the cross-section taken along line III-III' shown in Figure 1 the cross-section, Figure 7 Corresponding to the cross-section taken along line IV-IV' shown in Figure 1 the cross-section. More specifically, Figure 5 can represent the first direction and third direction cross-sections of the main body 110 polished to the 1 / 4 point in the second direction, Figure 6 can represent the first direction and third direction cross-sections of the main body 110 polished to 2 / 4 (1 / 2) point in the second direction, and Figure 7 can represent the first direction and third direction cross-sections of the main body 110 polished to the 3 / 4 point in the second direction.

[0067] In this case, the central portion of the capacitor forming portion Ac in the first direction and third direction cross-sections of the main body 110 polished to the 1 / 4 point in the second direction can be defined as the first central portion C0, the central portion of the capacitor forming portion Ac in the first direction and third direction cross-sections of the main body 110 polished to the 2 / 4 point in the second direction can be defined as the second central portion C1, and the central portion of the capacitor forming portion Ac in the first direction and third direction cross-sections of the main body 110 polished to the 3 / 4 point in the second direction can be defined as the third central portion C2.

[0068] In this case, when the ratio of the area of the Ni-containing oxide included in the first central portion C0 to the total area of the first central portion C0 is defined as SC0 (SC0 = (the area of the Ni-containing oxide in the first central portion C0) / (the total area of the first central portion C0)), the ratio of the area of the Ni-containing oxide included in the second central portion C1 to the total area of the second central portion C1 is defined as SC1 (SC1 = (the area of the Ni-containing oxide in the second central portion C1) / (the total area of the second central portion C1)), and the ratio of the area of the Ni-containing oxide included in the third central portion C2 to the total area of the third central portion C2 is defined as SC2 ((the area of the Ni-containing oxide in the third central portion C2) / (the total area of the third central portion C2)), 0.9 < SC1 / SC0 < 1.1 and 0.9 < SC2 / SC0 < 1.1 can be satisfied. Therefore, the Ni-containing oxide can be uniformly distributed not only in the first direction or the third direction, but also in the second direction, thereby further improving the reliability and voltage withstand characteristics of the multilayer electronic component 100.

[0069] In some exemplary embodiments, in the cross-sections in the first direction and the third direction of the main body 110, the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the total area of the capacitor forming portion Ac may be greater than or equal to 0.03 and less than or equal to 0.10. Therefore, the Ni-containing oxide can be uniformly distributed in the capacitor forming portion, thereby improving the connectivity of the internal electrodes and the strength, capacitance characteristics, voltage withstand characteristics, and reliability of the multilayer electronic component 100.

[0070] When the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the total area of the capacitor forming portion Ac in the above cross-section is less than 0.03 or greater than 0.10, the effect of improving the bonding strength between the internal electrodes 121 and 122 and the dielectric layer 111 may be somewhat insufficient.

[0071] Therefore, in the exemplary embodiments, the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the total area of the capacitor forming portion Ac in the above cross-section can be controlled to be greater than or equal to 0.03 and less than or equal to 0.10, thereby improving the bonding strength between the internal electrodes 121 and 122 and the dielectric layer 111 and improving the mechanical strength of the multilayer electronic component 100.

[0072] When the internal electrodes include the Ni-containing oxide, the Ni-containing oxide can delay the shrinkage of the internal electrodes 121 and 122, and the dielectric layer 111 can be free from shrinkage stress, so that the size of the dielectric grains can be reduced. That is, the area occupied by the Ni-containing oxide in the entire capacitor forming portion can be adjusted to control the size of the dielectric grains. Therefore, the capacitance characteristics, voltage withstand characteristics, and reliability of the multilayer electronic component 100 can be improved.

[0073] Specifically, when the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the total area of the capacitor forming portion Ac in the above cross-section is less than 0.03, the dielectric grain refinement effect may be somewhat insufficient, and when the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the total area of the capacitor forming portion Ac in the above cross-section is greater than 0.10, the sintering delay of the internal electrode may be excessively performed, which may reduce the connectivity of the internal electrode or locally increase the thickness of the internal electrode. Therefore, it may be difficult to ensure the capacitance characteristics, withstand voltage characteristics, and reliability of the multilayer electronic component 100.

[0074] Therefore, in an exemplary embodiment, the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the total area of the capacitor forming portion Ac in the above cross-section can be adjusted to be greater than or equal to 0.03 and less than or equal to 0.10 to obtain a sufficient dielectric grain refinement effect and prevent excessive sintering delay of the internal electrode, thereby ensuring the capacitance characteristics, withstand voltage characteristics, and reliability of the multilayer electronic component.

[0075] In addition, in an exemplary embodiment, the degree of oxidation of Ni included in the internal electrodes 121 and 122 can be adjusted during the pre-sintering process of the multilayer electronic component to control the area occupied by the Ni-containing oxide in the capacitor forming portion Ac or the degree of uniform distribution of the Ni-containing oxide in the capacitor forming portion Ac.

[0076] In addition, in an exemplary embodiment, the Ni-containing oxide can be provided in the internal electrodes 121 and 122. Therefore, the connectivity of the internal electrodes 121 and 122 can be improved.

[0077] In addition, in an exemplary embodiment, a part of the Ni-containing oxide can be formed to contact the dielectric layer 111. In addition, a part of the Ni-containing oxide can be provided at the interface between the dielectric layer 111 and the internal electrode. Therefore, the bonding strength between the internal electrodes 121 and 122 and the dielectric layer 111 can be improved.

[0078] The method for measuring the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is not particularly limited.

[0079] For example, in the first and third direction cross-sections of the multilayer electronic component 100 polished to the 1 / 2 point in the second direction as in the exemplary embodiment, the capacitance forming portion Ac can be divided into a central portion C1 and side portions T1-1, T1-2, M1-1, and M1-2. Elemental analysis can be performed on each region of the central portion C1 and the side portions T1-1, T1-2, M1-1, and M1-2 using a scanning electron microscope - energy dispersive X-ray spectrometer (SEM-EDS), and the regions formed with Ni-containing oxides in each region can be colored so that the regions formed with Ni-containing oxides are distinguishable from other regions, thereby calculating and measuring the ratio of the area of the region formed with Ni-containing oxides in each region to the area of each region. When the average value is calculated after obtaining the ratio of the area of the region formed with Ni-containing oxides in each region to the area of each region in this way, the ratio of the area of the Ni-containing oxides included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac can be made more general.

[0080] Referring to Figure 4 , the internal electrode 121 can include a plurality of electrode portions and one or more disconnection portions 121c located between the plurality of electrode portions. The plurality of electrode portions are the 121a regions including Ni or the 121b regions including Ni-containing oxides. In this case, the connectivity of the internal electrode 121 can be expressed as the ratio of the sum of the lengths of the plurality of electrode portions (L1 + L2) to the total length Lt of the internal electrode 121.

[0081] When the ratio of the sum of the lengths of the plurality of electrode portions (L1 + L2) to the total length Lt of the internal electrode 121 is less than 0.80, it may be difficult to ensure the capacitance characteristics, withstand voltage characteristics, and reliability of the multilayer electronic component. Therefore, the ratio of the sum of the lengths of the plurality of electrode portions (L1 + L2) to the total length Lt of the internal electrode 121 can be greater than or equal to 0.80.

[0082] The upper limit of the ratio of the sum of the lengths of the plurality of electrode portions (L1 + L2) to the total length Lt of the internal electrode 121 does not need to be specifically limited. For example, this ratio can be less than or equal to 0.95.

[0083] In Figure 4 , the connectivity of the internal electrode has been described based on the first internal electrode 121, but the connectivity of the internal electrode can be defined in the same way for the second internal electrode 122. Additionally, the connectivity of the internal electrode can refer to: in the first and second direction cross-sections of the multilayer electronic component 100 polished to the center in the third direction, the average value of the values measured from three or more internal electrodes 121 and 122 located at the center of the capacitance forming portion Ac in the first direction.

[0084] In an exemplary embodiment, the dielectric layer 111 may include a plurality of dielectric grains, and the average size of the plurality of dielectric grains may be greater than or equal to 340 nm and less than or equal to 410 nm. In the first and third direction cross-sections polished to the center of the multilayer electronic component 100 in the second direction, the method of measuring the lengths of the minor axis and major axis of 10 or more arbitrary dielectric grains in the central portion C1 of the capacitance forming portion and calculating their average value may be used, or the method of measuring the area of the dielectric grains in pixels and converting the measured value into a circular equivalent diameter may be used to obtain the average size of the plurality of dielectric grains, but it is not limited thereto. Additionally, in order to make the average size of the plurality of dielectric grains more general, the same measurements may be performed on the sides T1-1, T1-2, M1-1, and M1-2, and then their average value may be obtained.

[0085] The outer electrodes 130 and 140 may be respectively disposed on the third surface 3 and the fourth surface 4 of the main body 110. The outer electrodes 130 and 140 may include a first outer electrode 130 disposed on the third surface 3 of the main body 110 and connected to the first inner electrode 121, and a second outer electrode 140 disposed on the fourth surface 4 of the main body 110 and connected to the second inner electrode 122.

[0086] In this exemplary embodiment, a structure in which the multilayer electronic component 100 has two outer electrodes 130 and 140 is described, but the number or shape of the outer electrodes 130 and 140 may be changed according to the shape of the inner electrodes 121 and 122 or other purposes.

[0087] Additionally, the outer electrodes 130 and 140 may be formed of any conductive material (such as a metal), and the specific material may be determined considering electrical characteristics, structural stability, etc. Furthermore, the outer electrodes 130 and 140 may have a multilayer structure.

[0088] For example, the outer electrodes 130 and 140 may include an electrode layer disposed on the main body 110 and a plating layer formed on the electrode layer.

[0089] For a more specific example of the electrode layer, the electrode layer may be a sintered electrode including a conductive metal and glass, or may be a resin-based electrode including a conductive metal and resin.

[0090] Additionally, the electrode layer may be formed in a form where the sintered electrode and the resin-based electrode are sequentially formed on the main body. Additionally, the electrode layer may be formed by transferring a sheet including a conductive metal to the main body, or may be formed by transferring a sheet including a conductive metal to the sintered electrode.

[0091] The conductive metal contained in the electrode layer may use a material with excellent conductivity and is not particularly limited. For example, the conductive metal may be one or more of nickel (Ni), copper (Cu), and their alloys.

[0092] The coating is used to improve the mounting characteristics. The type of the coating is not particularly limited and may be a coating including at least one of Ni, Sn, Pd, and their alloys, and may be formed of multiple layers.

[0093] For a more specific example of the coating, the coating may be a Ni coating or a Sn coating, or may be a form in which a Ni coating and a Sn coating are sequentially formed on the electrode layer, or may be a form in which a Sn coating, a Ni coating, and a Sn coating are sequentially formed on the electrode layer. Additionally, the coating may include multiple Ni coatings and / or multiple Sn coatings.

[0094] The size of the multilayer electronic component 100 does not need to be particularly limited. However, in order to achieve miniaturization and high capacitance simultaneously, the thickness of the dielectric layer and the internal electrodes should be reduced to increase the number of stacked layers, such that the reliability improvement effect according to the present invention may be more significant in the multilayer electronic component 100 having a size of 0603 (length × width, 0.6 mm × 0.3 mm) or less.

[0095] Here, the length of the multilayer electronic component 100 may refer to the maximum size of the multilayer electronic component 100 in the second direction, and the width of the multilayer electronic component 100 may refer to the maximum size of the multilayer electronic component 100 in the third direction.

[0096] <Example of the Invention 1> Table 1 below shows the area ratio (area fraction of Ni-containing oxide (%)) of the area of the Ni-containing oxide included in the central portion to the area of the central portion measured by changing the polishing point in the second direction of the multilayer electronic component in the cross-sections in the first direction and the third direction, where the ratio of the area of the Ni-containing oxide to the area of the capacitance forming portion Ac of Sample 1 is less than 0.03, the ratio of the area of the Ni-containing oxide to the area of the capacitance forming portion Ac of Sample 2 is greater than or equal to 0.03 and less than or equal to 0.10, and the ratio of the area of the Ni-containing oxide to the area of the capacitance forming portion Ac of Sample 3 is greater than 0.10.

[0097] Table 1:

[0098] Referring to Table 1 above, regardless of the polishing points of the multilayer electronic component in the second direction, it can be confirmed that the dispersion of the Ni-containing oxide area fraction (%) in the central portions of the cross-sections in the first and third directions is within 10%. That is to say, as in the exemplary embodiment, it can be confirmed that when the ratio of the area of the Ni-containing oxide included in the first central portion C0 to the area of the first central portion C0 is defined as SC0, the ratio of the area of the Ni-containing oxide included in the second central portion C1 to the area of the second central portion C1 is defined as SC1, and the ratio of the area of the Ni-containing oxide included in the third central portion C2 to the area of the third central portion C2 is defined as SC2, 0.9 < SC1 / SC0 < 1.1 and 0.9 < SC2 / SC0 < 1.1 can be satisfied.

[0099] In this case, in Sample 2 where the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is greater than or equal to 0.03 and less than or equal to 0.10, in the capacitor forming portion Ac polished to the 2 / 4 (1 / 2) point in the second direction, the area ratio (Ni-containing oxide area fraction (%)) of the area of the Ni-containing oxide included in regions 1-5 to the area of regions 1-5 is measured and shown in Table 2.

[0100] Regions 1 and 2 represent the regions corresponding to the covering side portions T1-1 and T1-2 according to the exemplary embodiment, region 3 represents the region corresponding to the central portion C1 according to the exemplary embodiment, and regions 4 and 5 represent the regions corresponding to the edge side portions M1-1 and M1-2 according to the exemplary embodiment.

[0101] Table 2:

[0102] Referring to Table 2, it can be confirmed that in each region, the dispersion of the ratio of the area of the Ni-containing oxide included in the corresponding region to the area of each region is less than or equal to 10%. That is to say, as in the exemplary embodiment, it can be confirmed that when the ratio of the area of the Ni-containing oxide included in the central portion C1 to the area of the central portion C1 is defined as SC, and the ratio of the area of the Ni-containing oxide included in the side portions T1-1, T1-2, M1-1, and M1-2 to the area of the side portions T1-1, T1-2, M1-1, and M1-2 is defined as SMT, 0.9 < SMT / SC < 1.1 can be satisfied.

[0103] <Inventive Example 2> Figure 9 It is an image of the change in the size of the dielectric grains of the dielectric layer observed by a scanning electron microscope (SEM) according to the ratio of the area of the Ni-containing oxide included in the capacitor forming portion to the area of the capacitor forming portion.

[0104] Figure 9 In (a), the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is less than 0.03. Figure 9 In (b), the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is greater than or equal to 0.03 and less than or equal to 0.10, and Figure 9 In (c), the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is greater than 0.10.

[0105] It can be confirmed that Figure 9 the size of the dielectric grains of the dielectric layer in (b) is smaller than Figure 9 the size of the dielectric grains of the dielectric layer in (a).

[0106] It can be confirmed that Figure 9 the local thickness increase of the inner electrode in (c) is greater than Figure 9 the local thickness increase of the inner electrode in (b), and Figure 9 the disconnection portion of the inner electrode in (c) also increases.

[0107] That is, when the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is greater than or equal to 0.03 and less than or equal to 0.10 as in the exemplary embodiment, the dielectric grains of the dielectric layer can be refined while ensuring the connectivity of the inner electrode.

[0108] <Inventive Example 3> Figure 10 It is a graph showing the capacitance and breakdown voltage characteristics according to the ratio of the area of the Ni-containing oxide included in the capacitor forming portion to the area of the capacitor forming portion.

[0109] Referring to Figure 10 , it can be confirmed that when the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is greater than or equal to 0.03 (3%) and less than or equal to 0.10 (10%), the capacitance characteristics and breakdown voltage characteristics do not deteriorate. In contrast, when the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is less than 0.03 (3%), there is a deterioration in the breakdown voltage characteristics, and when the ratio of the area of the Ni-containing oxide included in the capacitor forming portion Ac to the area of the capacitor forming portion Ac is greater than 0.10 (10%), there are deteriorations in the capacitance characteristics and breakdown voltage characteristics.

[0110] The capacitance characteristics are measured as the electrostatic capacitance value (nF) using a capacitance meter under the conditions of 1 kHz and 1 V, and the voltage value (unit: V) is measured as the breakdown voltage (BDV) value at the moment of insulation breakdown while increasing the voltage by 5 V per second.

[0111] That is, when the ratio of the area of the Ni-containing oxide included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is greater than or equal to 0.03 (3%) and less than or equal to 0.10 (10%) as in the exemplary embodiment, the capacitance characteristics and the withstand voltage characteristics of the multilayer electronic component can be ensured simultaneously.

[0112] <Inventive Example 4> Table 3 below shows Sample 1 in which the ratio of the area of the Ni-containing oxide included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is less than 0.03, Sample 2 in which the ratio of the area of the Ni-containing oxide included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is greater than or equal to 0.03 and less than or equal to 0.10, and Sample 3 in which the ratio of the area of the Ni-containing oxide included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is greater than 0.10, and the crack incidence rate and reliability of Samples 1, 2, and 3 that occur through destructive physical analysis (DPA) are evaluated and shown.

[0113] Destructive physical analysis (DPA) is performed such that when the multilayer electronic component is polished to the 1 / 2 point in the second direction with 200-mesh sandpaper, the cross-sections in the first direction and the third direction are observed with an optical microscope (OM) to determine whether cracks occur.

[0114] Reliability evaluation is performed by performing the first step under the conditions of 150 °C, 250 V, and 4 hours, operating by increasing the voltage by 50 V per step until the seventh step, and performing the eighth step under the conditions of 150 °C, 600 V, and 12 hours. Then, the case where the insulation resistance is reduced to equal to or less than 1 / 100 times the initial value is evaluated as unqualified.

[0115] Table 3:

[0116] Referring to Table 3, it can be confirmed that the mechanical strength and reliability of Samples 1 and 3 are not excellent, the DPA crack incidence rate of Sample 2 is 0%, and the number of unqualified in the reliability evaluation is 0.

[0117] That is, it can be confirmed that when the ratio of the area of the Ni-containing oxide included in the capacitance forming portion Ac to the area of the capacitance forming portion Ac is greater than or equal to 0.03 and less than or equal to 0.10 as in the exemplary embodiment, the mechanical strength and reliability of the multilayer electronic component 100 are improved.

[0118] Although the exemplary embodiments of the present disclosure have been described in detail above, the scope of the present disclosure is not limited by the embodiments and drawings described herein, but is defined by the appended claims. Therefore, those of ordinary skill in the art can make various substitutions, modifications or changes without departing from the scope of the present disclosure defined by the appended claims, and these substitutions, modifications or changes should be construed as being included within the scope of the present disclosure.

[0119] In addition, the expression "exemplary embodiment" used in the present disclosure does not mean the same embodiment and is provided to emphasize and explain different unique features. However, the embodiments presented above do not exclude the combination of features with another embodiment. For example, although the items described in a specific embodiment are not described in another embodiment, unless there is a description contrary to or inconsistent with the item in another embodiment, the item can also be understood as being related to the description in another embodiment.

[0120] In the present disclosure, the terms are only used to describe specific embodiments and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, the singular form may also include the plural form.

Claims

1. A multi-layer electronic component, comprising: A main body, including a dielectric layer and internal electrodes, the internal electrodes including first internal electrodes and second internal electrodes alternately arranged in a first direction, and the dielectric layer being interposed between the first internal electrodes and the second internal electrodes; and External electrodes respectively provided on surfaces of the main body opposite to each other in a second direction perpendicular to the first direction, wherein the internal electrodes include Ni-containing oxides and Ni, A region where the first internal electrodes and the second internal electrodes are stacked on each other in the first direction is defined as a capacitance forming portion, In a cross-section of the main body in the first direction and a third direction, the capacitance forming portion includes a central portion provided at the center of the capacitance forming portion in the first direction and the third direction, and side portions provided at upper and lower portions of the capacitance forming portion in the first direction and at two side surfaces of the capacitance forming portion in the third direction, the third direction being perpendicular to the first direction and the second direction, and When a ratio of an area of the Ni-containing oxides included in the central portion to a total area of the central portion is defined as SC, and a ratio of an area of the Ni-containing oxides included in the side portions to a total area of the side portions is defined as SMT, 0.9 < SMT / SC < 1.1 is satisfied.

2. The multilayer electronic component according to claim 1, wherein The central portion is a region provided at the center of the first direction and the third direction in a region formed by dividing the capacitance forming portion into five equal parts in the first direction and five equal parts in the third direction, and The side portions are regions that are in contact with the two side surfaces of the capacitance forming portion in the third direction and are provided at the center of the first direction, and regions that are in contact with the upper and lower surfaces of the capacitance forming portion in the first direction and are provided at the center of the third direction in a region formed by dividing the capacitance forming portion into five equal parts in the first direction and five equal parts in the third direction.

3. The multilayer electronic component according to claim 2, wherein: In the side portions, a region that is in contact with the upper and lower surfaces of the capacitance forming portion in the first direction and is provided at the center of the third direction is called a covering side portion, and a region that is in contact with the two side surfaces of the capacitance forming portion in the third direction and is provided at the center of the first direction is defined as an edge side portion, and When a ratio of an area of the Ni-containing oxides included in the covering side portion to a total area of the covering side portion is defined as ST, and a ratio of an area of the Ni-containing oxides included in the edge side portion to a total area of the edge side portion is defined as SM, 0.9 < ST / SC < 1.1 and 0.9 < SM / SC < 1.1 are satisfied.

4. The multilayer electronic component according to claim 1, wherein: The central portion of the capacitance forming portion in the first direction and third direction cross-sections of the main body polished to the 1 / 4 point in the second direction is defined as the first central portion, the central portion of the capacitance forming portion in the first direction and third direction cross-sections of the main body polished to the 2 / 4 point in the second direction is defined as the second central portion, and the central portion of the capacitance forming portion in the first direction and third direction cross-sections of the main body polished to the 3 / 4 point in the second direction is defined as the third central portion, and when the ratio of the area of the Ni-containing oxide included in the first central portion to the area of the first central portion is defined as SC0, the ratio of the area of the Ni-containing oxide included in the second central portion to the area of the second central portion is defined as SC1, and the ratio of the area of the Ni-containing oxide included in the third central portion to the area of the third central portion is defined as SC2, 0.9 < SC1 / SC0 < 1.1 and 0.9 < SC2 / SC0 < 1.1 are satisfied.

5. The multilayer electronic component according to claim 1, wherein In the first direction and third direction cross-sections of the main body, the ratio of the area of the Ni-containing oxide included in the capacitance forming portion to the area of the capacitance forming portion is greater than or equal to 0.03 and less than or equal to 0.

10.

6. The multilayer electronic component according to claim 1, wherein: The Ni-containing oxide is provided in the inner electrode.

7. The multilayer electronic component according to claim 1, wherein: A part of the Ni-containing oxide is provided in the region of the inner electrode in contact with the dielectric layer.

8. The multilayer electronic component according to claim 1, wherein A part of the Ni-containing oxide is provided at the interface between the inner electrode and the dielectric layer.

9. The multilayer electronic component according to claim 1, wherein: The inner electrode includes a plurality of electrode portions and one or more disconnection portions, the plurality of electrode portions are regions including Ni or the Ni-containing oxide, the one or more disconnection portions are disconnection regions between the plurality of electrode portions, and the ratio of the sum of the lengths of the plurality of electrode portions to the total length of the inner electrode is greater than or equal to 0.80 and less than or equal to 0.

95.

10. The multilayer electronic component according to claim 1, wherein The dielectric layer includes a plurality of dielectric grains, and the average grain size of the plurality of dielectric grains is greater than or equal to 340 nm and less than or equal to 410 nm.

11. The multilayer electronic component according to claim 1, wherein The average thickness of the dielectric layer is less than or equal to 0.35 μm.

12. The multilayer electronic component according to claim 1, wherein The average thickness of the inner electrode is less than or equal to 0.35 μm.

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