Device compatible with impedance matchers with different frequencies and plasma etching equipment

Abstract

The invention discloses a device compatible with impedance matchers with different frequencies and plasma etching equipment. The device comprises a radio frequency power supply, a first matcher, a second matcher, a conversion structure and a reaction chamber, the radio frequency power supply is connected with the input end of the first matcher or the input end of the second matcher, and the output end of the first matcher and the output end of the second matcher are electrically connected with the reaction chamber through the conversion structure; the frequencies of the first matcher and the second matcher are different; the conversion structure is used for switching the first matcher and the second matcher with different frequencies, so that the output end of the first matcher is electrically connected with the reaction chamber, or the output end of the second matcher is electrically connected with the reaction chamber. According to the invention, etching processes with different frequencies can be alternately switched, and the etching effect of equipment is ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor etching equipment, and in particular, to a device compatible with impedance matchers of different frequencies and a plasma etching equipment. Background Art

[0002] Atomic Layer Etching (ALE) is an advanced etching technology that can achieve excellent depth control for relatively shallow microstructures. The ALE technology overcomes the limitations of traditional continuous etching technology at the atomic scale, and thus has received increasing attention. Through Silicon Via (TSV) etching technology is to fabricate vertical conduction between chips and between wafers, reducing the interconnect length, signal delay, capacitance, and inductance through vertical interconnection, and is one of the key processes for 2.5D / 3D packaging.

[0003] In the case of the fixed frequency characteristics of existing plasma etching equipment, the transmission device and the overall environment of the reaction chamber are regarded as an impedance unit. The transmission device can be a transmission line between the RF power supply and the matcher. The matcher forms an L-type, Π-type, or T-type impedance transformation network by using an LC circuit, so that the matcher and the transmission device and the overall environment of the chamber are regarded as an overall impedance unit to achieve impedance matching close to 50Ω, thereby realizing the maximum transmission of the transmitted signal. However, the actual process requirements often need to be carried out under the conditions of changing different RF operating frequencies. However, during the operation of the mixer impedance matcher, impedance matchers of different frequencies are prone to interfere with each other, and it is impossible to ensure the etching effect of the equipment during the etching process. Summary of the Invention

[0004] The present invention provides a device compatible with impedance matchers of different frequencies and a plasma etching equipment, which can alternately switch the etching processes of different frequencies and ensure the etching effect of the device during the etching process.

[0005] According to one aspect of the present invention, a device compatible with impedance matchers of different frequencies is provided, including:

[0006] an RF power supply, a first matcher, a second matcher, a conversion structure, and a reaction chamber;

[0007] The RF power supply is electrically connected to the input end of the first matcher or the input end of the second matcher, and the output ends of the first matcher and the second matcher are electrically connected to the reaction chamber through the conversion structure;

[0008] The first matcher and the second matcher have different frequencies; the conversion structure is used to switch the first matcher and the second matcher of different frequencies, so that the output end of the first matcher is electrically connected to the reaction chamber, or the output end of the second matcher is electrically connected to the reaction chamber.

[0009] Optionally, the output ends of the first matcher and the second matcher are both first metal posts;

[0010] The surface of the first metal post is provided with a counterbore, and the surface of the conversion structure adjacent to the first metal post includes a protrusion; alternatively, the surface of the first metal post is provided with a protrusion; the surface of the conversion structure adjacent to the first metal post includes a counterbore;

[0011] The protrusion is embedded into the counterbore.

[0012] Optionally, the device for compatible with impedance matchers of different frequencies further includes a spring gasket, and the spring gasket is located in the counterbore;

[0013] The protrusion is embedded into the counterbore through the spring gasket.

[0014] Optionally, the conversion structure includes a second metal post and a third metal post; the third metal post is electrically connected to the first metal post through the second metal post;

[0015] The surface of the first metal post adjacent to the second metal post is provided with a counterbore, and the surface of the second metal post adjacent to the first metal post is provided with a protrusion; alternatively, the surface of the first metal post adjacent to the second metal post is provided with a protrusion, and the surface of the second metal post adjacent to the first metal post is provided with a counterbore;

[0016] The first metal post extends along a first direction, the third metal post extends along a second direction, there is a first preset angle between the second metal post and the first metal post, and there is a second preset angle between the second metal post and the third metal post; the first direction is perpendicular to the second direction.

[0017] Optionally, the materials of the first metal post, the second metal post and the third metal post all include copper.

[0018] Optionally, the device for compatible with impedance matchers of different frequencies further includes:

[0019] A host computer and a toggling device, the host computer is electrically connected to the toggling device, and the toggling device is located on the conversion structure;

[0020] The host computer is configured to send a first control instruction or a second control instruction to the toggling device; the toggling device is configured to control the conversion structure to be electrically connected to the first matcher according to the first control instruction, or the toggling device is configured to control the conversion structure to be electrically connected to the second matcher according to the second control instruction.

[0021] Optionally, the reaction chamber includes: a radio frequency coil and a chamber body; the chamber body includes a dielectric window, an electrostatic chuck electrode and an electrostatic chuck;

[0022] The conversion structure is electrically connected to the electrostatic chuck.

[0023] Optionally, the device compatible with impedance matchers of different frequencies further includes:

[0024] A voltage detection device, which is disposed outside the chamber body and is electrically connected to the electrostatic chuck.

[0025] Optionally, the voltage detection device includes: a filter and a voltage sensor;

[0026] The first end of the filter is electrically connected to the electrostatic chuck, and the second end of the filter is electrically connected to the voltage sensor.

[0027] According to another aspect of the present invention, there is provided a plasma etching device, including the device compatible with impedance matchers of different frequencies according to any embodiment of the present invention.

[0028] The technical solution provided by the embodiments of the present invention is that the radio frequency power supply is electrically connected to the input end of the first matcher or the input end of the second matcher, and the output ends of the first matcher and the second matcher are electrically connected to the reaction chamber through a conversion structure; the frequencies of the first matcher and the second matcher are different; the conversion structure is used to switch between the first matcher and the second matcher of different frequencies, so that the output end of the first matcher is electrically connected to the reaction chamber, or the output end of the second matcher is electrically connected to the reaction chamber. Through the conversion structure, the embodiments of the present invention can switch to the first matcher and the second matcher of different frequencies according to different process requirements, effectively ensuring that only one of the first matcher and the second matcher works properly at the same time, avoiding interference between the first matcher and the second matcher of different frequencies, and ensuring the etching effect of subsequent etching.

[0029] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present invention, nor is it used to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. Description of the Drawings

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0031] Figure 1 It is a schematic diagram of a device compatible with impedance matchers of different frequencies provided by an embodiment of the present invention.

[0032] Figure 2 It is a schematic diagram of another device compatible with impedance matchers of different frequencies provided by an embodiment of the present invention.

[0033] Figure 3 It is a simplified schematic diagram of a conversion structure provided by an embodiment of the present invention.

[0034] Figure 4 It is a schematic diagram of a reaction chamber provided by an embodiment of the present invention. Detailed implementation manners

[0035] In order to enable those skilled in the art to better understand the solution of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0036] It should be noted that the terms "first", "second", etc. in the present invention are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so that the embodiments of the present invention described here can be implemented in an order other than those illustrated or described here. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units does not necessarily have to be limited to those steps or units clearly listed, but may include other steps or units not clearly listed or inherent to these processes, methods, products or devices.

[0037] The inventor found that if a plasma etching device is to be compatible with two etching technologies of different frequencies, for example, the two etching technologies of different frequencies are atomic layer etching technology and through-silicon via etching technology; the actual process requirements often need to be changed under different radio frequency operating frequency conditions. However, during the operation of the mixer impedance matcher, the impedance matchers of different frequencies are prone to interfere with each other. The matching effect and matching time directly determine the density and energy of the plasma in the reaction chamber, and further affect the uniformity and etching rate of the wafer surface, etc.

[0038] Based on this, the present invention proposes a device that is compatible with impedance matchers of different frequencies through gear switching, enabling atomic layer etching and through-silicon via etching to be alternately switched, ensuring that the device has higher precision and controllability, while achieving low-power, high-speed communication between chips, increasing bandwidth and achieving miniaturization.

[0039] An embodiment of the present invention provides a device that is compatible with impedance matchers of different frequencies, Figure 1 It is a schematic diagram of a device that is compatible with impedance matchers of different frequencies provided by an embodiment of the present invention,Figure 2 This is a schematic diagram of another device for a compatible different-frequency impedance matcher provided by an embodiment of the present invention. Refer to Figure 1 and Figure 2 , the device for a compatible different-frequency impedance matcher includes:

[0040] A radio frequency power supply 10, a first matcher 20, a second matcher 30, a conversion structure 40, and a reaction chamber 50; the radio frequency power supply 10 is electrically connected to the input end of the first matcher 20 or the input end of the second matcher 30, and the output ends of the first matcher 20 and the second matcher 30 are electrically connected to the reaction chamber 50 through the conversion structure 40; the first matcher 20 and the second matcher 30 have different frequencies; the conversion structure 40 is used to switch between the first matcher 20 and the second matcher 30 with different frequencies, so that the output end 21 of the first matcher 20 is electrically connected to the reaction chamber 50, or the output end 31 of the second matcher 30 is electrically connected to the reaction chamber 50.

[0041] Wherein, Figure 1 This is a schematic diagram of the conversion structure 40 electrically connected to the first matcher 20, Figure 2 This is a schematic diagram of the conversion structure 40 electrically connected to the second matcher 30; both the first matcher 20 and the second matcher 30 are impedance matchers; the conversion structure 40 can be electrically connected to the electrostatic chuck 56 (ESC) of the reaction chamber 50; since the output impedance of the radio frequency power supply 10 may not match the impedance of the wafer to be etched, it will cause radio frequency energy reflection and reduce the transmission efficiency; therefore, a matcher is required to adjust its own capacitance, inductance and other parameters to make the input impedance and output impedance of the radio frequency circuit match, so that more radio frequency energy can be effectively transmitted to the wafer and improve the plasma generation efficiency and etching effect; however, different etching processes need to be carried out under conditions of changing different radio frequency working frequencies, so the embodiment of the present invention sets the first matcher 20 and the second matcher 30 to match different etching processes; the first matcher 20 and the second matcher 30 have different frequencies. Exemplarily, the frequency of the first matcher 20 is greater than the frequency of the second matcher 30. The first matcher 20 is used to match the input impedance and output impedance of the radio frequency circuit in the atomic layer etching technology, and the second matcher 30 is used to match the input impedance and output impedance of the radio frequency circuit in the through-silicon via etching technology.

[0042] To ensure the independence of the first matcher 20 and the second matcher 30 operating at different frequencies and prevent mutual interference between the first matcher 20 and the second matcher 30 during operation, which may cause impedance matching chaos and result in failure to match, in the embodiments of the present invention, by providing a conversion structure 40, it is possible to switch to the first matcher 20 and the second matcher 30 operating at different frequencies according to different process requirements, such that the RF power supply 10 is electrically connected to the first matcher 20, and the first matcher 20 is electrically connected to the reaction chamber 50 through the conversion structure 40, or such that the RF power supply 10 is electrically connected to the second matcher 30, and the second matcher 30 is electrically connected to the reaction chamber 50 through the conversion structure 40; effectively ensuring that only one of the first matcher 20 and the second matcher 30 is operating normally at the same time, which can avoid mutual interference between the first matcher 20 and the second matcher 30 operating at different frequencies and ensure the etching effect of subsequent etching.

[0043] The technical solution provided by the embodiments of the present invention is that the RF power supply 10 is electrically connected to the input end of the first matcher 20 or the input end of the second matcher 30, and the output ends of the first matcher 20 and the second matcher 30 are electrically connected to the reaction chamber 50 through the conversion structure 40; the first matcher 20 and the second matcher 30 have different frequencies; the conversion structure 40 is used to switch between the first matcher 20 and the second matcher 30 operating at different frequencies, such that the output end 21 of the first matcher 20 is electrically connected to the reaction chamber 50, or such that the output end 31 of the second matcher 30 is electrically connected to the reaction chamber 50. In the embodiments of the present invention, by means of the conversion structure 40, it is possible to switch to the first matcher 20 and the second matcher 30 operating at different frequencies according to different process requirements, effectively ensuring that only one of the first matcher 20 and the second matcher 30 is operating normally at the same time, which can avoid mutual interference between the first matcher 20 and the second matcher 30 operating at different frequencies and ensure the etching effect of subsequent etching.

[0044] Optionally, referring to Figure 1 and Figure 2 , both the output end 21 of the first matcher 20 and the output end 31 of the second matcher 30 are first metal posts; the surface of the first metal post is provided with a counterbore, and the surface of the conversion structure 40 adjacent to the first metal post includes a protrusion; or, the surface of the first metal post is provided with a protrusion; the surface of the conversion structure adjacent to the first metal post includes a counterbore; the protrusion is embedded in the counterbore.

[0045] Among them, the first metal pillar may include a copper pillar, which has a low cost and a mature process; the surface of the first metal pillar is the surface in contact with the conversion structure 40, and the surface of the first metal pillar is provided with a counterbore or a protrusion. The surface of the conversion structure 40 adjacent to the first metal pillar is the surface in contact with the first metal pillar, and the surface of the conversion structure 40 adjacent to the first metal pillar includes a protrusion or a counterbore; if the surface of the first metal pillar is provided with a counterbore, then the surface of the conversion structure 40 adjacent to the first metal pillar is provided with a protrusion, and if the surface of the first metal pillar is provided with a protrusion, then the surface of the conversion structure 40 adjacent to the first metal pillar is provided with a counterbore; so that the protrusion can be embedded into the counterbore, which can enable the conversion structure to form an interlock with the output end of each matcher. During the gear shifting process of the device, the output ends 21 of the first matcher 20 and the output ends 31 of the second matcher 30 with different frequencies can be tightly connected to the conversion structure 40, improving the reliability of the device.

[0046] Optionally, referring to Figure 1 and Figure 2 , the device compatible with impedance matchers of different frequencies further includes a spring gasket, and the spring gasket is located in the counterbore; the protrusion is embedded into the counterbore through the spring gasket.

[0047] Among them, in order to avoid the problem of wear and deformation at the connection between the output end 21 of the first matcher 20 and the output end 31 of the second matcher 30 and the conversion structure 40 due to multiple gear shifts, in the embodiment of the present invention, a counterbore is provided on the surface of the first metal pillar, and a fixed spring gasket is provided in the counterbore. The surface of the conversion structure 40 adjacent to the first metal pillar includes a protrusion, or a protrusion is provided on the surface of the first metal pillar, and a counterbore is provided on the surface of the conversion structure 40 adjacent to the first metal pillar, and a fixed spring gasket is provided in the counterbore; so that the protrusion is embedded into the counterbore through the fixed spring gasket to form an interlock, making the connection with the output end of the impedance matcher tight during the gear shifting process, reducing the collision friction loss, increasing the service life, and improving the reliability of the device; at the same time, the problem of unstable connection of the conversion structure 40 can be overcome, and the stability of the connection can be ensured through the spring gasket, effectively avoiding problems such as arcing.

[0048] Optionally, referring to Figure 1 and Figure 2 , the conversion structure 40 includes a second metal pillar 41 and a third metal pillar 42; the third metal pillar 42 is electrically connected to the first metal pillar through the second metal pillar 41; a counterbore is provided on the surface of the first metal pillar adjacent to the second metal pillar 41, and a protrusion is provided on the surface of the second metal pillar 41 adjacent to the first metal pillar; or, a protrusion is provided on the surface of the first metal pillar adjacent to the second metal pillar 41, and a counterbore is provided on the surface of the second metal pillar 41 adjacent to the first metal pillar;

[0049] The first metal column extends along the first direction X, the third metal column 42 extends along the second direction Y, the second metal column 41 has a first preset angle with the first metal column, and the second metal column 41 has a second preset angle with the third metal column 42; the first direction X is perpendicular to the second direction Y.

[0050] The first metal column is the output end 21 of the first matcher 20 or the output end 31 of the second matcher 30, the first metal column extends along the first direction X, the third metal column 42 extends along the second direction Y, the first metal column and the third metal column 42 have no intersection, and the first metal column and the third metal column 42 are electrically connected through the second metal column 41, therefore, the second metal column 41 needs to be tilted, one end of the second metal column 41 is connected to the third metal column 42, and the other end of the second metal column 41 is in contact with the first metal column, so as to realize the electrical connection between the conversion structure 40 and the output end 21 of the first matcher 20 and the output end 31 of the second matcher 30; Figure 3 is a simplified schematic diagram of a conversion structure provided by an embodiment of the present invention, refer to Figure 3 There is a first preset angle A1 between the second metal pillar 41 and the first metal pillar, there is a second preset angle A2 between the second metal pillar 41 and the third metal pillar 42, and the sum of the first preset angle A1 and the second preset angle A2 is 270 degrees, so that the equipment can realize the switching of the first matcher 20 and the second matcher 30 of different frequencies through the second metal pillar 41 and the third metal pillar 42 according to actual process requirements.

[0051] Optionally, the materials of the first metal pillar, the second metal pillar and the third metal pillar all include copper.

[0052] The materials of the first metal pillar, the second metal pillar and the third metal pillar all include copper, which has low cost and simple and mature process, and is convenient for achieving better electrical connection.

[0053] Optional, reference Figure 1 and Figure 2 The device compatible with impedance matchers of different frequencies also includes: a host computer and a toggle device, the host computer is electrically connected to the toggle device, and the toggle device is located on the conversion structure 40; the host computer is used to send a first control instruction or a second control instruction to the toggle device; the toggle device is used to control the conversion structure 40 to be electrically connected to the first matcher 20 according to the first control instruction, or the toggle device is used to control the conversion structure 40 to be electrically connected to the second matcher 30 according to the second control instruction.

[0054] Among them, the host computer and the toggle device are not Figure 1 and Figure 2As shown in the figure, the host computer can send a first control instruction or a second control instruction to the toggle device. The first control instruction can be an instruction to electrically connect the conversion structure 40 with the first matcher 20, and the second control instruction can be an instruction to electrically connect the conversion structure 40 with the second matcher 30; the toggle device toggles the second metal column 41 and the third metal column 42 according to the first control instruction, so that the second metal column 41 is electrically connected to the output end 21 of the first matcher 20, and the toggle device toggles the second metal column 41 and the third metal column 42 according to the second control instruction, so that the second metal column 41 is electrically connected to the output end 31 of the second matcher 30. The host computer controls the toggle device to switch gears left and right, and switches the matcher connected to the second metal column 41 according to different process requirements; ensure that the first matcher 20 and the second matcher 30 of different frequencies are independent of each other, avoid crosstalk between the matchers, and effectively ensure that only one of the two matchers works normally at the same time.

[0055] Optional, Figure 4 is a schematic diagram of a reaction chamber provided in an embodiment of the present invention, with reference to Figure 4 ,refer to Figure 1 and Figure 4 The reaction chamber 50 includes: a radio frequency coil 51 and a chamber body 52; the chamber body 52 includes a dielectric window 53, an electrostatic adsorption chuck electrode 55 and an electrostatic adsorption chuck 56; and the conversion structure 40 is electrically connected to the electrostatic adsorption chuck 56.

[0056] Among them, the chamber body 52 includes a top and a bottom that are oppositely arranged. The dielectric window 53 is located at the top of the chamber body. The radio frequency coil 51 is located outside the chamber body 52 and on the side of the dielectric window 53 away from the bottom of the chamber body 52. The electrostatic chuck 56 is located at the bottom of the chamber body 52. The electrostatic chuck electrode 55 is located between the dielectric window 53 and the electrostatic chuck 56, and the electrostatic chuck electrode 55 covers part of the electrostatic chuck 56. The wafer 54 is placed on the side of the electrostatic chuck electrode 55 away from the electrostatic chuck 56. The radio frequency coil 51 is arranged outside the chamber body 52 and is used to generate an alternating magnetic field. The dielectric window 53 is located at the top of the chamber body 52, allowing the magnetic field generated by the radio frequency coil 51 to penetrate through the dielectric window 53 and enter the chamber body 52 to excite plasma. The wafer 54 is placed on the electrostatic chuck electrode 55 inside the chamber body 52. The electrostatic chuck electrode 55 is part of the electrostatic chuck 56, and the electrostatic chuck 56 is used to fix and support the wafer. The first matcher 20 and the second matcher 30 can be connected between the radio frequency power supply 10 and the electrostatic chuck 56 to match the impedance of the radio frequency circuit and ensure that radio frequency energy can be efficiently transmitted to the wafer 54. The first matcher 20 and the second matcher 30 are electrically connected to the electrostatic chuck 56 through the conversion structure 40, so that the first matcher 20 and the second matcher 30 with different frequencies can be switched through the conversion structure 40 according to different process requirements. It can effectively ensure that only one of the first matcher 20 and the second matcher 30 works properly at the same time, avoid interference between the first matcher 20 and the second matcher 30 with different frequencies, ensure the etching effect of wafer etching, and ensure that the device has higher precision and controllability by alternately switching matchers with different frequencies, realizing advantages such as low power consumption, high-speed communication, increased bandwidth, and miniaturization between chips after wafer etching.

[0057] Optionally, referring to Figure 4 , the device compatible with impedance matchers of different frequencies further includes: a voltage detection device 57. The voltage detection device 57 is arranged outside the chamber body and is electrically connected to the electrostatic chuck 56.

[0058] Among them, the voltage detection device 57 is used to detect the analog signal of the electrostatic chuck bias voltage, and the actual bias voltage can be calculated through the scaling ratio coefficient and the analog value.

[0059] Optionally, referring to Figure 4 , the voltage detection device includes: a filter 58 and a voltage sensor 59. The first end of the filter 58 is electrically connected to the electrostatic chuck 56, and the second end of the filter 58 is electrically connected to the voltage sensor 59.

[0060] Among them, the electrostatic chuck 56 can be input through the DC high-voltage input terminal HV+. The output terminal of the electrostatic chuck 56 is electrically connected to the first terminal of the filter 58. The second terminal of the filter 58 is electrically connected to the voltage sensor 59. The output terminal of the voltage sensor 59 is the DC high-voltage output terminal HV-. When detecting the voltage of the electrostatic chuck 56, a method for isolating low-frequency signals is provided. In order to avoid the problem that the voltage sensor 59 is damaged due to too high low-frequency signal voltage,

[0061] Exemplarily, the low-frequency signal is a 400KHz through-silicon via etching technology radio frequency signal. When using the voltage sensor 59 to detect the analog signal of the bias voltage of the electrostatic chuck 56, since the voltage signal of the 400KHz through-silicon via etching radio frequency matching network passing through the voltage sensor 59 is too high, it is easy to cause damage to the voltage sensor 59. By adding a filter 58 between the electrostatic chuck 56 and the voltage sensor 59, the voltage signal conducted by the 400KHz through-silicon via etching radio frequency matching network can be effectively filtered, and at the same time, it is ensured that the high-frequency signal can be detected by the voltage sensor 59. Exemplarily, the high-frequency signal is a 13.56MHz radio frequency signal of atomic layer etching technology. Thus, the 400KHz through-silicon via etching radio frequency matching network signal can be effectively isolated, and only the radio frequency matching network signal with a high frequency (13.56MHz) can be received, avoiding damage to the voltage sensor 59 caused by too high voltage.

[0062] Optionally, referring to Figure 1 and Figure 2 , the frequency of the first matcher 20 is greater than the frequency of the second matcher 30.

[0063] Among them, the first matcher 20 can be an atomic layer etching (ALE) high-frequency 13.56MHz impedance matcher, and the second matcher 30 can be a through-silicon via etching technology (TSV) low-frequency 400KHz impedance matcher. By switching the structure to avoid crosstalk between the matchers, it can effectively ensure that only one of the two matchers works normally at the same time. For different process requirements, by switching the impedance matching network, the embodiment of the present invention can provide a device compatible with atomic layer etching and through-silicon via etching, and different-frequency matchers can be set according to requirements. The embodiment of the present invention does not make specific limitations.

[0064] On the basis of the above embodiment, the embodiment of the present invention further provides a plasma etching device, including the device compatible with impedance matchers of different frequencies described in any embodiment of the present invention.

[0065] The plasma etching device described in the present invention has the same beneficial effects as the device compatible with impedance matchers of different frequencies described in any embodiment of the present invention.

[0066] It should be understood that the various forms of processes shown above can be used, with steps reordered, added or deleted. For example, the steps recited in the present invention can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical solution of the present invention can be achieved, and no limitation is imposed herein.

[0067] The above specific embodiments do not constitute a limitation on the protection scope of the present invention. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A device compatible with impedance matchers of different frequencies, characterized in that: include: A radio frequency power supply, a first matcher, a second matcher, a conversion structure and a reaction chamber; The RF power supply is electrically connected to the input end of the first matcher or the input end of the second matcher, and the output end of the first matcher and the output end of the second matcher are electrically connected to the reaction chamber through the conversion structure; The frequencies of the first matcher and the second matcher are different; The conversion structure is used to switch the first matcher and the second matcher of different frequencies, so that the output end of the first matcher is electrically connected to the reaction chamber, or the output end of the second matcher is electrically connected to the reaction chamber.

2. The device compatible with impedance matchers of different frequencies according to claim 1, characterized in that: The output end of the first matcher and the output end of the second matcher are both first metal pillars; The surface of the first metal column is provided with a countersunk hole, and the surface of the conversion structure adjacent to the first metal column includes a protrusion; or, the surface of the first metal column is provided with a protrusion; the surface of the conversion structure adjacent to the first metal column includes a countersunk hole; The protrusion is embedded in the counterbore.

3. The device compatible with impedance matchers of different frequencies according to claim 2, characterized in that: Also includes: a spring washer, the spring washer being located in the counterbore; The protrusion is embedded in the countersunk hole through the spring washer.

4. The device compatible with impedance matchers of different frequencies according to claim 2, characterized in that: The conversion structure includes a second metal column and a third metal column; the third metal column is electrically connected to the first metal column through the second metal column; A countersunk hole is disposed on a surface of the first metal column adjacent to the second metal column, and a protrusion is disposed on a surface of the second metal column adjacent to the first metal column; or, a protrusion is disposed on a surface of the first metal column adjacent to the second metal column, and a countersunk hole is disposed on a surface of the second metal column adjacent to the first metal column; The first metal column extends along a first direction, the third metal column extends along a second direction, a first preset angle is formed between the second metal column and the first metal column, and a second preset angle is formed between the second metal column and the third metal column; the first direction is perpendicular to the second direction.

5. The device compatible with impedance matchers of different frequencies according to claim 4, characterized in that: The first metal pillar, the second metal pillar and the third metal pillar are all made of copper.

6. The device compatible with impedance matchers of different frequencies according to claim 1, characterized in that: Also includes: A host computer and a toggle device, wherein the host computer is electrically connected to the toggle device, and the toggle device is located on the conversion structure; The host computer is used to send a first control instruction or a second control instruction to the toggle device; the toggle device is used to control the conversion structure to be electrically connected to the first matcher according to the first control instruction, or the toggle device is used to control the conversion structure to be electrically connected to the second matcher according to the second control instruction.

7. The device compatible with impedance matchers of different frequencies according to claim 1, characterized in that: The reaction chamber comprises: a radio frequency coil and a chamber body; the chamber body comprises a dielectric window, an electrostatic adsorption chuck electrode and an electrostatic adsorption chuck; The conversion structure is electrically connected to the electrostatic adsorption chuck.

8. The device compatible with impedance matchers of different frequencies according to claim 7, characterized in that: Also includes: A voltage detection device is disposed outside the chamber body and is electrically connected to the electrostatic adsorption chuck.

9. The device compatible with impedance matchers of different frequencies according to claim 8, characterized in that: The voltage detection device comprises: a filter and a voltage sensor; The first end of the filter is electrically connected to the electrostatic adsorption chuck, and the second end of the filter is electrically connected to the voltage sensor.

10. A plasma etching device, characterized in that: A device compatible with impedance matchers of different frequencies comprising the device described in any one of claims 1 to 9.

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