Heating plate and method of manufacturing a heating plate

Abstract

The invention discloses a heating plate and a method for manufacturing the heating plate. Specifically disclosed is a heating plate for supporting and heating a substrate, comprising: a base layer on which the substrate is mounted; a bonding layer bonded to the lower surface of the base layer; and a bonding force reducing body provided between the base layer and the bonding layer to reduce an interface bonding force between the bonding layer and the base layer.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2023 - 0195398, filed with the Korean Intellectual Property Office on December 28, 2023, the entire contents of which are incorporated herein by reference. Technical field

[0003] The present invention relates to a heating plate for heating a substrate and a method of manufacturing the heating plate. Background art

[0004] In order to manufacture semiconductor devices or flat display panels, various processes such as deposition processes, photolithography processes, etching processes, and cleaning processes need to be performed. Among these processes, the photolithography process includes: a coating process of forming a film by applying a photosensitive liquid (such as a photoresist) to the surface of a substrate, an exposure process of transferring a circuit pattern to the film formed on the substrate, and a development process of selectively removing the film formed on the substrate in the exposed area or the opposite area. In addition, before and after performing these coating processes, exposure processes, and development processes, a heat treatment process is performed.

[0005] Here, the heat treatment process is performed by transferring the substrate to a heat treatment chamber and heating the transferred substrate. In this case, in the prior art, the substrate is heat - treated by receiving heat from the heated heating plate while being mounted on the heating plate.

[0006] The heating plate includes a base layer for mounting the substrate and a heating wire layer for generating heat, and the heating wire layer is bonded to the base layer to heat the base layer during heat generation.

[0007] At this time, since the heating wire layer and the base layer are made of different materials, the heating wire layer and the base layer expand by different volumes during thermal expansion, thereby generating interfacial stress at the bonding surface between the heating wire layer and the base layer. This interfacial stress is repeatedly generated when the heating plate repeatedly performs the heating process, and ultimately leads to the problem of cracking of the bonding surface between the heating wire layer and the base layer.

[0008] On the other hand, the heating wire layer is coupled to a terminal stand to connect a power supply line. In order to couple the terminal stand to the heating wire layer, it is necessary to further form a separate terminal connection layer between the terminal stand and the heating wire layer before combination. Therefore, since an operation of separately forming the terminal stand connection layer needs to be performed, there is a problem that the manufacturing time is correspondingly increased.

[0009] In addition, as well-known methods for coupling a terminal block, there are a welding coupling process and a soldering coupling process. Here, when the heating wire layer and the terminal connection layer are coupled by welding, there is a problem that the coupled portion by welding is liable to melt during heating of the substrate. In addition, when the heating wire layer and the terminal connection layer are combined by soldering, there is a problem of melting or carbonization in the soldering area. Summary of the Invention

[0010] The present invention is directed to providing a heating plate and a method of manufacturing the heating plate that reduce interfacial stress between a heating layer and a base layer during thermal expansion of the heating layer and the base layer, thereby preventing rupture of a bonded surface between the heating layer and the base layer.

[0011] The present invention is also directed to providing a heating plate and a method of manufacturing the heating plate that shorten a manufacturing time and increase a coupling force of a terminal block by coupling the terminal block to the heating layer by only one coupling process.

[0012] The problems to be solved by the present invention are not limited to the above problems, and those skilled in the art will clearly understand the problems not mentioned from the following description.

[0013] An exemplary embodiment of the present invention provides a heating plate for supporting and heating a substrate, the heating plate including: a base layer on which the substrate is disposed; a bonding layer bonded to a lower surface of the base layer; and a bonding force reducing body disposed between the base layer and the bonding layer to reduce an interfacial bonding force between the bonding layer and the base layer.

[0014] According to an exemplary embodiment of the present invention, the bonding force reducing body is disposed between the base layer and the bonding layer in a state of being divided into a plurality of regions, and may be disposed in a dispersed state where they are not connected to each other.

[0015] According to an exemplary embodiment of the present invention, when viewed from above, the plurality of bonding force reducing bodies may be arranged and disposed in a dot matrix form.

[0016] According to an exemplary embodiment of the present invention, the bonding force reducing body may be in close contact with the base layer to reduce a contact area between the base layer and the bonding layer.

[0017] According to an exemplary embodiment of the present invention, the bonding layer may be a heating wire layer that is heated when power is supplied or an insulating layer formed of an insulating material.

[0018] According to an exemplary embodiment of the present invention, the base layer and the bonding layer may have different coefficients of thermal expansion.

[0019] According to an exemplary embodiment of the present invention, the bonding layer may be formed to have a thickness greater than the thickness of the bonding strength reducing body so as to cover the lower surface of the bonding strength reducing body.

[0020] According to an exemplary embodiment of the present invention, the bonding strength reducing body may include a plurality of granular bodies.

[0021] According to an exemplary embodiment of the present invention, the bonding strength reducing body may further include a coating layer coated on the outer surface of the granular bodies and having a higher thermal conductivity (heat conductivity, thermal conductivity) than that of the granular bodies.

[0022] According to an exemplary embodiment of the present invention, the granular body has a hollow region that may be formed therein.

[0023] According to an exemplary embodiment of the present invention, voids may also be formed between the granular bodies.

[0024] An exemplary embodiment of the present invention provides a method for manufacturing a heating plate of a heating substrate, the method including: a base layer preparation operation for preparing a base layer for mounting the substrate; a bonding strength reducing body formation operation for disposing a bonding strength reducing body on the base layer; a bonding layer formation operation for forming a bonding layer on the base layer and the bonding strength reducing body; and a sintering operation for sintering the bonding layer, wherein, in the bonding strength reducing body formation operation, the bonding strength reducing body is disposed to reduce the bonding area between the bonding layer and the base layer.

[0025] According to an exemplary embodiment of the present invention, in the bonding strength reducing body formation operation, the bonding strength reducing body is divided into a plurality of regions and disposed between the base layer and the bonding layer, and each of the plurality of bonding strength reducing bodies may be dispersed so as not to be connected to each other.

[0026] According to an exemplary embodiment of the present invention, in the bonding strength reducing body formation operation, the bonding strength reducing body may be disposed in close contact with the base layer.

[0027] According to an exemplary embodiment of the present invention, in the bonding strength reducing body formation operation, the bonding strength reducing body may be non-chemically bonded to the base layer.

[0028] According to an exemplary embodiment of the present invention, in the bonding layer formation operation, the bonding layer may be formed to cover the bonding strength reducing body.

[0029] According to an exemplary embodiment of the present invention, the bonding strength reducing body is formed to include a plurality of granular bodies, and in the bonding layer formation operation, the plurality of granular bodies may be disposed in close contact with the bonding layer.

[0030] According to an exemplary embodiment of the present invention, the bonding force reducing body may further include a coating layer coated on the outer surface of the granular body and having a higher thermal conductivity than that of the granular body.

[0031] According to an exemplary embodiment of the present invention, in the bonding layer forming operation, the bonding layer is formed of a heating wire layer, and the method includes: a terminal connection layer forming operation of forming a terminal connection layer on the heating wire layer; and a terminal stand seating operation of seating a terminal stand on the terminal connection layer, and in the sintering operation, the heating wire layer and the terminal connection layer may be sintered simultaneously.

[0032] An exemplary embodiment of the present invention provides a heating plate for supporting and heating a substrate, the heating plate including: a base layer on which the substrate is seated; a bonding layer bonded to the lower surface of the base layer, formed of a heating wire layer or an insulating layer and having a different coefficient of thermal expansion from that of the base layer; and a bonding force reducing body disposed between the base layer and the bonding layer to reduce the interfacial bonding force between the bonding layer and the base layer; and wherein, the bonding layer is formed to have a thickness greater than the thickness of the bonding force reducing body to cover the lower surface of the bonding force reducing body, and the bonding force reducing body is disposed between the base layer and the bonding layer in a state of being divided into a plurality of regions, and the plurality of bonding force reducing bodies are disposed in a dispersed state where they are not connected to each other, and when viewed from above, the plurality of bonding force reducing bodies are arranged and disposed in a dot matrix form, the bonding force reducing body is in close contact with the base layer to reduce the contact area between the base layer and the bonding layer, and the bonding force reducing body includes a plurality of granular bodies having a hollow region formed therein, and further includes a coating layer coated on the outer surface of the granular body and having a higher thermal conductivity than that of the granular body.

[0033] The present invention reduces the interfacial stress between the bonding layer and the base layer during thermal expansion of the bonding layer and the base layer, thereby preventing rupture of the bonding surface between the bonding layer and the base layer.

[0034] Furthermore, the present invention has the effect of shortening the manufacturing time and increasing the bonding force of the terminal stand by bonding the terminal stand to the heating wire layer only in one bonding process.

[0035] The effects of the present invention are not limited to the above effects, and those skilled in the art can clearly understand the effects not described from the current specification and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The various features and advantages of the non-limiting embodiments of this specification may become apparent upon review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the scope of the claims. Unless otherwise specified, the drawings are not considered to be drawn to scale. For clarity and ease of understanding, various dimensions in the figures may be exaggerated.

[0037] Figure 1 A perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention.

[0038] Figure 2 For Figure 1 a front view of the substrate processing apparatus.

[0039] Figure 3 For Figure 1 a top plan view of an applying block in the substrate processing apparatus.

[0040] Figure 4 For Figure 1 a top plan view of a developing block in the substrate processing apparatus.

[0041] Figure 5 Schematically showing Figure 3 a top plan view of a transfer robot.

[0042] Figure 6 Schematically showing Figure 3 or Figure 4 a top plan view of an example of a heat treatment chamber.

[0043] Figure 7 For Figure 6 a front view of the heat treatment chamber.

[0044] Figure 8 Schematically showing Figure 3 or Figure 4 a cross-sectional view of an example of a liquid processing chamber.

[0045] Figure 9 For Figure 7 a partial cross-sectional view taken by longitudinally cutting a heating plate shown in

[0046] Figure 10 For Figure 9 a top plan view of a bonding strength reducing body shown in

[0047] Figure 11 For Figure 10 a partial cross-sectional view of an enlarged portion A shown in

[0048] Figure 12 formed by an insulating layerFigure 9 A cross-sectional view of the state of the bonding layer shown in

[0049] Figure 13 A flowchart of a method for manufacturing a heating plate according to an embodiment of the present invention.

[0050] Figure 14 and Figure 15 For Figure 13 A process flowchart for each of the operations of the heating plate manufacturing method shown in

[0051] Figure 16 A cross-sectional view of a comparative example in which a bonding force reducing body is not formed.

[0052] Figure 17 An enlarged cross-sectional view of a region where a bonding force reducing body is formed.

[0053] Figure 18 For Figure 16 A cross-sectional view of the state in which a terminal connection layer is further formed in

[0054] Figure 19 For Figure 18 A cross-sectional view of the state in which a terminal holder is further formed in Detailed Description

[0055] Example embodiments will now be described more fully with reference to the accompanying drawings. The example embodiments are provided so that this disclosure will be thorough and will fully convey the scope to those skilled in the art. Numerous specific details are set forth such as examples of specific components, devices, and methods to provide a thorough understanding of the embodiments of this disclosure. It will be apparent to those skilled in the art that the example embodiments may be embodied in many different forms and that specific details should not be construed as limiting the scope of this disclosure. In some example embodiments, well-known processes, well-known device structures, and well-known technologies are not described in detail.

[0056] The terms used in this specification are for the purpose of describing particular example embodiments only and are not intended to be limiting. As used herein, unless the context clearly dictates otherwise, the singular forms "a," "an," and "the" are intended to include the plural forms. The terms "comprises," "comprising," "includes," and "having" are inclusive and thus specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or combinations thereof. Unless explicitly identified as the order of execution, the method steps, processes, and operations described herein should not be construed as necessarily being performed in the particular order discussed or illustrated. It should also be understood that additional or alternative steps may be employed.

[0057] When an element or layer is referred to as "on," "engaged to," "connected to," or "coupled to" another element or layer, it can be directly on, engaged directly to, connected directly to, or coupled directly to the other element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as "directly on," "directly engaged to," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers. Other words used to describe the relationship between elements should be interpreted in a like manner (e.g., "between" relative to "directly between," "adjacent" relative to "directly adjacent," etc.). As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0058] Although the terms first, second, third, etc. may be used herein to describe different elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections are not limited by these terms unless otherwise stated. These terms may be used only to distinguish one element, component, region, layer, and / or section from another. When used herein, unless the context clearly indicates otherwise, terms such as "first," "second," and other numerical terms do not imply an order or sequence. Thus, a first element, first component, first region, first layer, or first section discussed below may be referred to as a second element, second component, second region, second layer, or second section without departing from the teachings of the example embodiments.

[0059] For ease of description, spatial relative terms, such as "inner", "outer", "beneath", "below", "lower", "above", and "upper", etc., may be used herein to describe the relationship of one element or feature shown in the drawings to another (other) element or feature. The spatial relative terms are intended to cover different orientations of the device in use or operation in addition to the orientation depicted in the drawings. For example, if the device in the figures is flipped, an element described as "below" or "beneath" another element or feature will then be oriented "above" the other element or feature. Thus, the exemplary term "below" can cover both an above and a below orientation. The device may be otherwise oriented (rotated 90 degrees or in other orientations), and the spatial relative descriptors used herein are interpreted accordingly.

[0060] When the terms "like" or "same" are used in the description of the exemplary embodiments, it should be understood that there may be some imprecision. Thus, when an element or value is referred to as being the same as another element or value, it should be understood that the element or value is the same as other elements or values within the manufacturing or operating tolerances (e.g., ±10%) of the other element or value.

[0061] When the terms "about" or "substantially" are used with a numerical value, it should be understood that the associated numerical value includes the manufacturing or operating tolerances around the stated numerical value (e.g., ±10%). In addition, when the words "generally" and "substantially" are used with respect to a geometry, it should be understood that exactness of the geometry is not required, but the latitude of the shape is within the scope of the present disclosure.

[0062] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which the exemplary embodiments belong. It should be further understood that terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

[0063] In the present exemplary embodiment, the wafer is described as an example of a target to be processed. However, the technical spirit of the present invention can be applied to devices for processing other types of substrates than wafers as processing targets.

[0064] Hereinafter, exemplary embodiments of the present invention will be described with reference to the drawings.

[0065] Figure 1 A perspective view schematically showing a substrate processing apparatus according to an exemplary embodiment of the present invention, and Figure 2 is Figure 1Front view of a substrate processing apparatus. Figure 3 For Figure 1 Top plan view of an applying block in a substrate processing apparatus, and Figure 4 For Figure 1 Top plan view of a developing block in a substrate processing apparatus.

[0066] Referring to Figures 1 to 4 , substrate processing apparatus 10 includes an indexing module 100, a processing module 300, and an interface module 500. According to an embodiment, the indexing module 100, the processing module 300, and the interface module 500 are sequentially arranged in a line. Hereinafter, the direction in which the indexing module 100, the processing module 300, and the interface module 500 are arranged is referred to as a first direction 12, the direction perpendicular to the first direction 12 when viewed from the top is referred to as a second direction 14, and the direction perpendicular to both the first direction 12 and the second direction 14 is referred to as a third direction 16.

[0067] The indexing module 100 is configured to transfer a substrate W between a container F in which the substrate W is accommodated and the processing module 300. The longitudinal direction of the indexing module 100 is set along the second direction 14. The indexing module 100 includes a load port 110 and an indexing frame 130. The container F in which the substrate W is accommodated is placed on the load port 110. The load port 110 is located on the opposite side of the indexing frame 130 with respect to the processing module 300. A plurality of load ports 110 may be provided, and the plurality of load ports 110 may be arranged along the second direction 14.

[0068] In an example, as the container F, a hermetic container F (such as a Front Open Unified Pod (FOUP)) may be used. The container F may be placed on the load port 110 by a transfer device (not shown) or by an operator, such as an overhead conveyor, an overhead transporter, or an automated guided vehicle.

[0069] An indexing robot 132 is provided inside the indexing frame 130. A guide rail 136 is provided inside the indexing frame 130. The longitudinal direction of the guide rail 136 is set along the second direction 14. The indexing robot 132 is mounted on the guide rail 136 to be movable along the guide rail 136. The indexing robot 132 includes a hand 132a on which the substrate W is placed. The hand 132a may be configured to be movable forward and backward, linearly movable along the third direction, and rotatable about an axis of the third direction 16.

[0070] The processing module 300 performs a coating process and a developing process on the substrate W. The processing module 300 includes a coating block 300a and a developing block 300b.

[0071] The developing block 300b performs a developing process on the unexposed substrate W. The developing block 300b performs a developing process on the substrate W after the exposure process. A plurality of coating blocks 300a are provided. The plurality of coating blocks 300a can be provided to be stacked on top of each other. A plurality of developing blocks 300b are provided. The plurality of developing blocks 300b can be provided to be stacked on top of each other. According to an example, two coating blocks 300a are provided, and two developing blocks 300b are provided. The plurality of coating blocks 300a can be provided below the developing block 300b.

[0072] According to an example, the plurality of coating blocks 300a can be provided with the same structure. The film coated onto the substrate W in each of the plurality of coating blocks 300a can be the same type of film. Optionally, the film coated onto the substrate W according to the coating block 300a can be different types of films. The film coated onto the substrate W includes a photoresist film. The film coated onto the substrate W can further include an anti-reflection film. Optionally, the film coated onto the substrate W can further include a protective film.

[0073] In addition, the two developing blocks 300b can be provided with the same structure. The developer supplied to the substrate W in the plurality of developing blocks 300b can be the same type of liquid. Optionally, the developer supplied to the substrate W according to the developing block 300b can be different types of developers. For example, a process for removing the irradiated area in the area of the register film on the substrate W can be performed in any one of the two developing blocks 300b, and a process for removing the unirradiated area can be performed in the other of the two developing blocks 300b.

[0074] Referring to Figure 3 , the coating block 300a includes a buffer unit 310, a cooling unit 320, a hydrophobization chamber 340, a transfer chamber 350, a heat treatment chamber 360, and a liquid treatment chamber 380.

[0075] The buffer unit 310, the cooling unit 320, and the hydrophobization chamber 340 are provided adjacent to the indexing module 100. The hydrophobization chamber 340 and the buffer unit 310 can be sequentially provided along the second direction 14. In addition, the cooling unit 320 and the buffer unit 310 can be provided to be stacked in the vertical direction.

[0076] The buffer unit 310 has one or more buffers 312. When multiple buffers 312 are provided, the multiple buffers 312 may be arranged to be stacked therebetween. The buffer unit 310 provides a space in which the substrate W stays when being transferred between the indexing module 100 and the processing module 300. The hydrophobization chamber 340 performs a hydrophobization process on the surface of the substrate W. The hydrophobization process may be performed before a coating process is performed on the substrate W. The hydrophobization process may be performed by supplying a hydrophobic gas to the substrate W while heating the substrate W. The cooling unit 320 cools the substrate W. The cooling unit 320 includes one or more cooling plates. When multiple cooling plates are provided, the multiple cooling plates may be arranged to be stacked on one another. According to an example, the cooling unit 320 may be provided below the buffer unit 310. The cooling plate may have a flow path through which a coolant flows. After the hydrophobization process is completed, the substrate W may be cooled in the cooling plate.

[0077] The transfer mechanism 330 is provided between the hydrophobization chamber 340 and the buffer unit 310, and between the hydrophobization chamber 340 and the cooling unit 320. The transfer mechanism 330 is arranged to be able to transfer the substrate W between the buffer unit 310, the hydrophobization chamber 340 and the cooling unit 320.

[0078] The transfer mechanism 330 has a hand 332 on which the substrate W is placed, and the hand 332 may be arranged to be movable forward and backward, rotatable about a third direction 16, and movable along the third direction 16. According to an example, the transfer mechanism 330 moves in the third direction 16 along a guide rail 334. The guide rail 334 extends from a coating block located at the lowermost end of the coating block 300a to a developing block located at the uppermost end of the developing block 300b. This allows the transfer mechanism 330 to transfer the substrate W between the coating block 300a and the developing block 300b provided on different layers. Therefore, the transfer mechanism 330 can transfer the substrate W between the coating block 300a and the developing block 300b provided on different layers. For example, the transfer mechanism 330 can transfer the substrate W between the coating block 300a and the developing block 300b.

[0079] In addition, another transfer unit 331 may be additionally provided at a side opposite to the side where the hydrophobization chamber 340 is provided with respect to the buffer unit 310. The other transfer unit 331 may transfer the substrate W between the buffer unit 310 and the cooling unit 320 provided in the same blocks 300a and 300b. Further, the other transfer unit 331 may be arranged to transfer the substrate W between the buffer unit 310 and the cooling unit 320 provided in different blocks 300a and 300b.

[0080] The longitudinal direction of the transfer chamber 350 is parallel to the first direction 12. One end of the transfer chamber 350 may be located adjacent to the buffer unit 310 and / or the cooling unit 320. The other end of the transfer chamber 350 may be located adjacent to the interface module 500.

[0081] A plurality of heat treatment chambers 360 are provided. Some of the heat treatment chambers 360 are arranged along the first direction 12. Additionally, some of the heat treatment chambers 360 may be stacked along the third direction 16. All of the heat treatment chambers 360 may be located on one side of the transfer chamber 350.

[0082] The liquid treatment chamber 380 performs a liquid film forming process for forming a liquid film on the substrate W. According to an example, the liquid film forming process includes a resist film forming process. The liquid film forming process may include an anti-reflective film forming process. Optionally, the liquid film forming process may further include a protective film forming process. A plurality of liquid treatment chambers 380 are provided. The liquid treatment chambers 380 may be located on the opposite side of the heat treatment chambers 360. For example, all of the liquid treatment chambers 380 may be located on the other side of the transfer chamber 350. The liquid treatment chambers 380 are arranged side-by-side along the first direction 12. Optionally, some of the liquid treatment chambers 380 may be stacked along the third direction 16.

[0083] In one example, the liquid treatment chamber 380 includes a front-end liquid treatment chamber 382 and a rear-end liquid treatment chamber 384. The front-end liquid treatment chamber 382 is arranged to be relatively close to the indexing module 100, and the rear-end liquid treatment chamber 384 is arranged to be closer to the interface module 500.

[0084] The front-end liquid treatment chamber 382 coats a first liquid onto the substrate W, and the rear-end liquid treatment chamber 384 coats a second liquid onto the substrate W. The first liquid and the second liquid may be different types of liquids. According to an example, the first liquid may be a liquid for forming an anti-reflective film, and the second liquid may be a liquid for forming a photoresist film. The photoresist film may be formed on the substrate W that has been coated with the anti-reflective film. Optionally, the first liquid may be a liquid for forming a photoresist film, and the second liquid may be a liquid for forming an anti-reflective film. In this case, the anti-reflective film may be formed on the substrate on which the photoresist film has been formed. Optionally, the first liquid and the second liquid may be the same type of liquid, and all of these liquids may be liquids for forming a photoresist film.

[0085] Refer to Figure 4, the developing block 300b includes a buffer unit 310, a cooling unit 320, a transfer chamber 350, a heat treatment chamber 360, and a liquid treatment chamber 380. The arrangements of the buffer unit 310, the cooling unit 320, the transfer chamber 350, the heat treatment chamber 360, and the liquid treatment chamber 380 in the developing block 300b can be the same as those in the coating block 300a. When viewed from above, the buffer unit 310, the cooling unit 320, the transfer chamber 350, the heat treatment chamber 360, and the liquid treatment chamber 380 in the developing block 300b and the buffer unit 310, the cooling unit 320, the transfer chamber 350, the heat treatment chamber 360, and the liquid treatment chamber 380 in the coating block 300a can be arranged in overlapping positions.

[0086] The heat treatment chamber 360 performs a heating process on the substrate W. The heating process includes a post-exposure baking process performed on the substrate W after the exposure process has been completed, and a hard baking process performed on the substrate W after the developing process has been completed.

[0087] The liquid treatment chamber 380 performs a developing process of supplying a developer to the substrate W and developing the substrate W.

[0088] In Figure 3 or Figure 4 , a transfer robot 351 is disposed in the transfer chamber 350. The transfer robot 351 transfers the substrate W between the buffer unit 310, the cooling unit 320, the heat treatment chamber 360, the liquid treatment chamber 380 and the buffer unit 510 or the cooling unit 520 of the interface module 500. According to an example, the transfer robot 351 has a hand 352 on which the substrate W is placed. The hand 352 can be arranged to be movable forward and backward, rotatable about a third direction 16, and movable along the third direction 16. A guide rail 356 whose longitudinal direction is parallel to the first direction 12 can be disposed in the transfer chamber 350, and the transfer robot 351 can be arranged to be movable on the guide rail 356.

[0089] Figure 5 is a top plan view schematically showing Figure 3 of the transfer robot. Referring to Figure 5, the hand part 352 includes a base part 352a and a support protrusion 352b. The base part 352a may have an annular ring shape in which a circumferential portion is curved. The base part 352a has an inner diameter larger than the diameter of the substrate W. The support protrusion 352b extends inward from the base part 352a. A plurality of support protrusions 352b are provided, and the plurality of support protrusions support an edge region of the substrate W. In one example, the support protrusions 352b may be arranged in a column at four equal intervals.

[0090] Figure 6 Schematically shown Figure 3 or Figure 4 a top plan view of an example of a heat treatment chamber, and Figure 7 is Figure 6 a front view of the heat treatment chamber.

[0091] Referring to Figure 6 and Figure 7 , the heat treatment chamber 360 includes a housing 361, a heating unit 363, and a transfer plate 364.

[0092] The housing 361 is set in the shape of a generally rectangular parallelepiped. An inlet port (not shown) is formed on a side wall of the housing 361, and the substrate W enters and exits through the inlet port. The inlet port may be kept open. A door (not shown) may be provided to selectively open and close the inlet port. The heating unit 363 and the transfer plate 364 may be provided in the housing 361.

[0093] The heating unit 363 includes a heating plate 363a, lifting pins 363e, and a cover 363c.

[0094] When viewed from the top, the heating plate 363a has a generally circular shape. The heating plate 363a may have a diameter larger than that of the substrate.

[0095] The heating plate 363a supports the substrate W that has been liquid-treated. In this case, the substrate W that has been liquid-treated may be transferred from the transfer plate 364. The heating plate 363a may be provided with a plurality of holes, and the lifting pins 363e communicate with these holes. The heating plate 363a is heated when powered. The heated heating plate 363a can heat the liquid-treated substrate W to perform soft baking or hard baking on the liquid. When cutting a cross-section of the heating plate in the vertical direction, the heating plate 363a may include a base layer 363a1, an insulating layer, and a heating wire layer 363a2, and will be described in more detail later.

[0096] The lift pin 363e is set to communicate with the heating plate 363a. The lift pin 363e is set to be movable in the up and down direction along the third direction 16. The lift pin 2669 receives the substrate W from the transfer robot 352, and places the received substrate W downward on the heating plate 363a, or lifts the substrate W from the heating plate 363a and delivers the substrate W to the transfer robot 352. According to an example, three lift pins 363e can be provided.

[0097] The lid-like member 363c has a space with an open lower part therein. The lid-like member 363c is located above the heating plate 363a and is moved in the vertical direction by a driver 363d. According to the movement of the lid-like member 363c, the space formed by the lid-like member 363c and the heating plate 363a is set as a heating space for heating the substrate W.

[0098] The transfer plate 364 is generally set in a disk shape and has a diameter corresponding to the substrate W. A notch 364b is formed at the edge of the transfer plate 364. The notch 364b can have a shape corresponding to the protrusion 352b formed on the hand of the above-mentioned transfer robot 352. Further, the notch 364b can be provided in a number corresponding to the protrusion 352b formed on the hand and is formed at a position corresponding to the protrusion 352b. When the up and down positions of the hand and the transfer plate 364 change at the position where the hand and the transfer plate 364 are vertically aligned, the substrate W is transferred between the hand 354 and the transfer plate 364. The transfer plate 364 is mounted on the guide rail 364d and can be moved along the guide rail 364d by a driver 364c.

[0099] A plurality of slit-shaped guide grooves 364a are provided in the transfer plate 364. The guide grooves 364a extend from the end of the transfer plate 364 to the inside of the transfer plate 364. The longitudinal direction of the guide grooves 364a is set along the second direction 14, and the guide grooves 364a are spaced apart from each other along the first direction 12. When transferring the substrate W between the transfer plate 364 and the heating unit 3400, the guide grooves 364a prevent the transfer plate 364 and the lift pin 363e from interfering with each other.

[0100] The transfer plate 364 is made of a material with high thermal conductivity. According to an example, the transfer plate 364 can be made of a metal material.

[0101] Cooling channels 364 are formed in the transfer plate 364. The cooling channels 364 are supplied with a coolant. The substrate W that has been heated in the heating unit 363 can be cooled while being transferred by the transfer plate 364. In addition, the substrate W can be cooled on the transfer plate 364 when the transfer plate 364 is stopped to hand over the substrate by the transfer robot 351.

[0102] Optionally, a cooling unit may be additionally provided in the housing 361. In this case, the cooling unit may be provided in parallel with the heating unit 363. The cooling unit may be provided as a cooling plate having a channel through which a coolant flows. The substrate that has been heated in the heating unit may be transferred to the cooling unit for cooling.

[0103] Figure 8 is schematically shown Figure 3 or Figure 4 a cross-sectional view of an example of a heat treatment chamber.

[0104] Referring to Figure 8 , the liquid processing chamber 380 includes a housing 382, an outer cup 384, a support unit 386, and a liquid supply unit 387.

[0105] The housing 382 is provided in a rectangular column shape having an internal space. An opening 382a is formed in one side of the housing 382. The opening 382a serves as a passage for the substrate W to enter and exit. A door (not shown) is installed in the opening 382a, and the door opens and closes the opening.

[0106] The outer cup 384 is provided in the internal space of the housing 382. The outer cup 384 has a processing space with an open top.

[0107] The support unit 386 supports the substrate W within the processing space of the outer cup 384. The support unit 386 includes a support plate 386a, a rotating shaft 386b, and a driver 386c. The support plate 386a is provided with a circular upper surface. The support plate 386a has a diameter smaller than that of the substrate W. The support plate 386a is provided to support the substrate W by vacuum pressure. The rotating shaft 386b is coupled to the center of the bottom surface of the support plate 386a, and the driver 386c is provided on the rotating shaft 386b to provide a rotational force to the rotating shaft 386b. The driver 386c may be a motor. Additionally, a lifting driver (not shown) for adjusting the relative height of the support plate 386a and the outer cup 384 may also be provided.

[0108] The liquid supply unit 387 supplies a processing solution onto the substrate W. When the liquid processing chamber 380 is set to the coating block 300a, the processing liquid may be a liquid for forming a photoresist film, an antireflective film, or a protective film. When the liquid processing chamber 380 is set to the developing block 300b, the processing liquid may be a developing liquid. The liquid supply unit 387 includes a nozzle 387a, a nozzle support 387b, and a liquid supply source (not shown). The nozzle 387a discharges the processing solution onto the substrate W. The nozzle 387a is supported on the nozzle support 387b. The nozzle support 387b moves the nozzle 387a between a process position and a waiting position. In the process position, the nozzle 387a supplies the processing liquid to the substrate W placed on the support plate 386a, and the nozzle 387a that has completed the supply of the processing liquid waits in the waiting position. In the standby position, the nozzle 387a waits in the trough port 388, and the trough port 388 is located outside the outer cup-shaped member 384 in the housing 382.

[0109] A fan filter unit 383 for supplying a downward air flow to the internal space is provided on the upper wall of the housing 382. The fan filter unit 383 includes a fan for introducing external air into the internal space and a filter for filtering the external air.

[0110] The outer cup-shaped member 384 has a bottom wall 384a, a side wall 384b, and a top wall 384c. The interior of the outer cup-shaped member 384 is provided with the internal space as described above. The internal space H includes an upper processing space and a lower discharge space.

[0111] The bottom wall 384a is provided in a ring shape and has an opening in the center. The side wall 384b extends upward from the outer end of the bottom wall 384a. The side wall 384b is provided in an annular shape and is provided perpendicular to the bottom wall 384a. In one example, the side wall 384b extends to a height equal to the upper surface of the support plate 386a, or extends to a height slightly lower than the upper surface of the support plate 386a. The top wall 384c has an annular shape and has an opening in the center. The top wall 384c is provided with an upward inclined portion extending from the top end of the side wall 384b toward the central axis of the outer cup-shaped member 384.

[0112] The guiding cup-shaped member 385 is located on the inner side of the outer cup-shaped member 384. The guiding cup-shaped member 385 has an inner wall 385a, an outer wall 385b, and a top wall 385c. The inner wall 385a has a through-hole penetrating in the vertical direction. The inner wall 385a is arranged to surround the driver 386c. The inner wall 385a minimizes the exposure of the driver 386c to the air flow 84 in the processing space. The rotation axis 386b of the support unit 386 and / or the driver 386c extends vertically through the through-hole. The outer wall 385b is spaced apart from the inner wall 385a and is arranged to surround the inner wall 385a. The outer wall 385b is spaced apart from the side wall 384b of the outer cup-shaped member 384. The inner wall 385a is spaced upward from the bottom wall 384a of the outer cup-shaped member 384. The upper wall 385c connects the top end of the outer wall 385b to the top end of the inner wall 385a. The upper wall 385c is annular and is arranged to surround the support plate 386a. According to one example, the upper wall 385c has a convex upward shape.

[0113] In the processing space, the space below the support plate 386a can be set as a discharge space. In one example, the discharge space can be defined by the guiding cup-shaped member 385. The space surrounded by the outer wall 385b, the upper wall 385c, and the inner wall 385a of the guiding cup-shaped member 385 and / or the space below this space can be set as the discharge space.

[0114] The gas-liquid separation plate 389 can be provided in the outer cup-shaped member 384. The gas-liquid separation plate 389 can be arranged to extend upward from the bottom wall 384a of the outer cup-shaped member 384. The gas-liquid separation plate 389 can be arranged in an annular shape. When viewed from above, the gas-liquid separation plate 389 can be located between the side wall 384b of the outer cup-shaped member 384 and the outer wall 385b of the guiding cup-shaped member 385. The top end of the gas-liquid separation plate 389 can be positioned lower than the bottom end of the outer wall 385b of the guiding cup-shaped member 385.

[0115] The bottom wall 384a of the outer cup-shaped member 384 is connected to a discharge pipe 381a and a drain pipe 381b for discharging the processing fluid. The discharge pipe 381a can be connected to the outer cup-shaped member 384 from the outside of the gas-liquid separation plate 389. The drain pipe 381b can be connected to the outer cup-shaped member 384 from the inside of the gas-liquid separation plate 389.

[0116] The interface module 500 connects the processing module 300 to the external exposure device 700. The interface module 500 includes an interface frame 501, a buffer unit 510, a cooling unit 520, a transfer mechanism 530, an interface manipulator 540, and an additional process chamber 560.

[0117] The fan filter unit can be provided at the top of the interface frame 501 to form a downward air flow therein. The buffer unit 510, the cooling unit 520, the transfer mechanism 530, the interface robot 540, and the additional process chamber 560 are provided within the interface frame 501.

[0118] The structures and arrangements of the buffer unit 510 and the cooling unit 520 can be the same as or similar to those of the buffer unit 310 and the cooling unit 320 provided to the processing module 300. The buffer unit 510 and the cooling unit 520 are provided adjacent to the end of the transfer chamber 350. The substrate W transferred between the processing module 300, the cooling unit 520, the additional process chamber 560, and the exposure apparatus 700 can be temporarily stopped in the buffer unit 510. The cooling unit 520 can be provided only at the height corresponding to the coating block 300a in the coating block 300a and the developing block 300b.

[0119] The transfer mechanism 530 can transfer the substrate W between the buffer units 510. In addition, the transfer mechanism 530 can transfer the substrate W between the buffer unit 510 and the cooling unit 520. The transfer mechanism 530 can be provided with the same or similar structure as the transfer mechanism 330 of the processing module 300. Another transfer mechanism 531 can be further provided in the area opposite to the area where the transfer mechanism 530 is provided with respect to the buffer unit 510.

[0120] The interface robot 540 is provided between the buffer unit 510 and the exposure apparatus 700. The interface unit 540 is provided to transfer the substrate W between the buffer unit 510, the cooling unit 520, the additional process chamber 560, and the exposure apparatus 700. The interface robot 540 has a hand 542 on which the substrate W is placed, and the hand 542 can be provided to be movable forward and backward, rotatable about an axis parallel to the third direction 16, and movable along the third direction 16.

[0121] The additional process chamber 560 can perform a predetermined additional process before introducing the substrate W that has completed the process in the coating block 300a into the exposure apparatus 700. Optionally, before loading the substrate W that has been processed in the exposure apparatus 700 into the developing block 300b, the additional process chamber 560 can perform a predetermined additional process. According to an example, the additional process can be an edge exposure process for exposing the edge region of the substrate W, an upper surface cleaning process for cleaning the upper surface of the substrate W, or an inspection process for performing a predetermined inspection on the substrate W. A plurality of additional process chambers 560 can be provided and they can be stacked on each other.

[0122] Figure 9 For longitudinal cutting Figure 7 Partial cross-sectional view taken by the heating plate shown in. Figure 10When viewed from above Figure 9 The plan view of the adhesion reducing body shown in Figure 9 when viewed from above. Figure 11 is Figure 10 The partial sectional view of the enlarged portion A shown in Figure 10 . Figure 12 is the sectional view of the state of the bonding layer formed by the insulating layer shown in Figure 9 Figure 9 .

[0123] As Figures 9 to 11 shown, the heating plate 363a may include a base layer 363a1, a bonding layer, and an adhesion reducing body 363a3, and may further include a terminal connection layer 363a4 and a terminal holder 363a5.

[0124] The substrate W is disposed on the base layer 363a1. In this case, the base layer 363a1 may further be formed with support pins (not shown), and the substrate W may be supported by the support pins (not shown). When the substrate W is supported on the support pins (not shown), the substrate W may be spaced apart from the upper surface of the base layer 363a1. The base layer 363a1 discharges the heat transferred from the heating wire layer 363a2 described later toward the substrate W. In addition, when viewed from top to bottom, the base layer 363a1 may be schematically formed in a disk shape. In this case, the thickness of the base layer 363a1 may be optionally formed in the range of 1.5 mm to 5 mm. The base layer 363a1 may be formed of a ceramic material or a non-conductive material. For example, the base layer 363a1 may be formed of any one of aluminum nitride, silicon dioxide, and silicon nitride. In addition, the base layer 363a1 may have a coefficient of thermal expansion different from that of the bonding layer described later. According to an example, the base layer 363a1 may have a coefficient of thermal expansion lower than that of the bonding layer.

[0125] The bonding layer may be positioned below the base layer 363a1. When the base layer 363a1 is a non-conductor, the bonding layer may be formed by the heating wire layer 363a2. When the bonding layer is the heating wire layer 363a2, the heating wire layer 363a2 may be surface-coupled to the base layer 363a1. When viewed from top to bottom, the heating wire layer 363a2 may be formed in a circular or arc shape at the center of the heating plate. In addition, the heating wire layer 363a2 may be provided in the form of a plurality of patterns having different diameters therebetween. The plurality of heating wire layers 363a2 may be arranged to be spaced apart from the center of the base layer 363a1 to cover the entire area of the base layer 363a1 formed in a disk shape. In addition, the heating wire layer 363a2 may be bonded to the insulating layer 363a5 or the base layer 363a1. The heating wire layer 363a2 is formed of a material including a transition metal and may generate heat when powered. According to an example, the heating wire layer 363a2 may be formed of an alloy including platinum. The heating wire layer 363a2 may heat the substrate W by conducting heat to the base layer 363a1, thereby baking the substrate W. Meanwhile, asFigure 12 As shown, when the base layer 363a1 is a conductor, the bonding layer can be formed by the insulating layer 363a5. When the bonding layer is formed by the insulating layer 363a5, the heating wire layer 363a2 can be further coupled to the insulating layer 363a5. In this case, the insulating layer 363a5 can insulate between the base layer 363a1 and the heating wire layer 363a2.

[0126] The bonding force reducing body 363a3 is disposed between the base layer 363a1 and the bonding layer to reduce the interfacial bonding force between the bonding layer and the base layer 363a1. As an example of the bonding force reducing body 363a3 reducing the interfacial bonding force between the base layer 363a1 and the bonding layer, the bonding force reducing body 363a3 is in close contact with the base layer 363a1 to reduce the contact area between the bonding layer and the base layer 363a1, thereby reducing the interfacial bonding force between the base layer 363a1 and the bonding layer. Therefore, during thermal expansion, the interfacial stress between the base layer 363a1 and the bonding layer is alleviated by the bonding force reducing body 363a3, so that the bonded surface can be prevented from cracking.

[0127] In addition, the bonding force reducing body 363a3 can be configured not to strongly bond to the base layer 363a1 and the bonding layer, thereby reducing the interfacial stress. Specifically, the bonding force reducing body 363a3 can be set to be non-chemically bonded to the base layer 363a1 and the bonding layer. For example, the bonding force reducing body 363a3 can separately form a metal body, a ceramic body, or a resin body, or a mixture thereof, between the bonding surfaces of the base layer 363a1 and the bonding layer 363a1.

[0128] In addition, the bonding force reducing body 363a3 can be disposed between the base layer 363a1 and the bonding layer in a state of being divided into multiple regions, and the multiple bonding force reducing bodies 363a3 can be disposed in a dispersed state where they are not connected to each other. According to an example, as Figure 10 shown, when viewed from above, the bonding force reducing body 363a3 can be arranged in a point lattice form. Therefore, since the interfacial stress generated during heating is dispersed in a point lattice form over the entire interface, cracking of the entire bonding surface can be prevented. The bonding force reducing body 363a3 can be selectively formed such that the diameter of the points is in the range of 5 μm to 100 μm.

[0129] On the other hand, the bonding layer is formed to have a thickness greater than the thickness of the bonding force reducing body 363a3 to cover the lower surface of the bonding force reducing body 363a3. Therefore, when the bonding layer is composed of the heating wire layer 363a2, the heat conducted to the substrate W is not reduced by conducting heat to the lower surface and side surfaces of the bonding force reducing body 363a3.

[0130] On the other hand, as an example of the bonding force reducing body 363a3, the bonding force reducing body 363a3 includes the granular body 363a3_1 as shown in Figure 11 the figure, and may further include a coating layer 363a3_2 and an auxiliary bonding layer 363a3_3.

[0131] A plurality of granular bodies 363a3_1 are formed. The granular body 575 may be formed into a spherical shape. According to an example, the granular body 363a3_1 may be formed of a non-conductive material. In this case, the granular body 363a3_1 may have a spherical outer surface in point contact with the base layer 363a1. The granular body 363a3_1 has a diameter larger than the diameter of the particles forming the bonding layer. When the base layer 363a1 and the bonding layer thermally expand toward the outer surface of the granular body 363a3_1, the stress generated at the distribution interface of the granular body 363a3_1 prevents the base layer 363a1 and the bonding layer from being damaged by the interface stress. In this case, the granular body 363a3_1 may have a hollow region 363a3_4 formed therein.

[0132] Therefore, the hollow region 363a3_1 contracts or expands during the thermal expansion of the bonding layer and the base layer 363a1, thereby absorbing the interface stress between the base layer 363a1 and the bonding layer to prevent cracking. At the same time, since the granular body 363a3_1 is formed of a sphere, voids 363a3_5 may be further formed around the points where the granular bodies 363a3_1 contact each other. The voids 363a3_5 provide an expansion region for the granular body 363a3_1, and thus, the granular body 363a3_1 can absorb more interface stress. Here, the voids 363a3_5 may have various shapes, such as a droplet shape or a crack shape.

[0133] The coating layer 363a3_2 is coated on the outer surface of the granular body 363a3_1, and may have a thermal conductivity higher than that of the granular body 363a3_1. According to an example, the coating layer 363a3_2 may be formed of a metal material having a high thermal conductivity. The coating layer 363a3_2 may be formed to have a higher thermal conductivity than the granular body 363a3_1, thereby preventing a decrease in the thermal conductivity of the heat conducted from the heating wire layer 363a2 to the base layer 363a1.

[0134] The auxiliary bonding layer 363a3_3 may surround the granular body 363a3_1. The auxiliary bonding layer 363a3_3 may fix the granular body 363a3_1 to maintain a state in which the granular body 363a3_1 is in close contact with the base layer 363a1. According to an example, the auxiliary bonding layer 363a3_3 may be formed of the same material as the connecting layer.

[0135] The terminal connection layer 363a4 is formed on the heating wire layer 363a2. The terminal connection layer 363a4 couples the terminal holder 363a5 to the heating wire layer 363a2. The terminal connection layer 363a4 is electrically connected to the heating wire layer 363a2. The terminal connection layer 363a4 may include a material such as gold, silver, copper, nickel, or an alloy including them.

[0136] The terminal holder 363a5 is coupled to the terminal connection layer 363a4. The terminal holder 363a5 provides an area for coupling to one end of the power supply line 363a6. The terminal holder 363a5 receives power from the power supply line 363a6 electrically connected to the power supply 363a7 and supplies electricity to the heating wire layer 363a2. The terminal holder 363a5 may be formed of gold, silver, copper, nickel, or an alloy including them. Further, the terminal holder 363a5 may further include a plating layer (not shown) formed on its outer surface to improve the coupling performance and corrosion resistance.

[0137] Hereinafter, a method of manufacturing a heating plate according to an embodiment of the present invention will be described.

[0138] Figure 13 is a flowchart of a method of manufacturing a heating plate according to an embodiment of the present invention. Figure 14 and Figure 15 are for Figure 13 each operation in the method of manufacturing the heating plate shown. Figure 14 and Figure 15 show the Figure 9 heating plate shown in an inverted state considering the stacking order during the manufacture of the base layer and the heating wire layer.

[0139] As Figure 13 shown, the method of manufacturing a heating plate according to an embodiment of the present invention may include a base layer preparation operation S10, a bonding force reducing body formation operation S20, and a bonding layer formation operation S30.

[0140] As Figure 14 shown, the base layer preparation operation S10 is an operation of preparing the base layer 363a1 of the substrate to be installed thereon. As described above, when viewed from top to bottom, the base layer 363a1 may be formed in a substantially disc shape. Further, as described above, the base layer 363a1 may be formed of a ceramic material or a metal material having a high thermal conductivity.

[0141] The bonding strength reduction body forming operation S20 is an operation of disposing a bonding strength reduction body 363a3 between the bonding layer and the base layer 363a1. In this case, the bonding strength reduction body 363a3 can be formed in close contact with the base layer 363a1 by at least one of printing, coating, and bonding. In this case, in the bonding strength reduction body forming operation S20, the bonding strength reduction body 363a3 may not be chemically coupled to the base layer 363a1 as described above. In addition, as Figure 11 shown, the bonding strength reduction body 363a3 may be configured to include a granular body 363a3_1, a coating layer 363a3_2, and an auxiliary bonding layer 363a3_3. In addition, as described above, in the bonding strength reduction body forming operation S20, the bonding strength reduction body 363a3 may be divided into a plurality of regions and disposed between the base layer 363a1 and the bonding layer, but each of the plurality of bonding strength reduction bodies 363a3 may be dispersed so as not to be connected to each other. Therefore, since the contact area between the bonding layer and the base layer 363a1 is reduced by the bonding strength reduction body 363a3, interfacial stress is eliminated and the bonding surface between the base layer 363a1 and the bonding layer is prevented from cracking.

[0142] As Figure 15 shown, the bonding layer forming operation S30 is an operation of forming a bonding layer on the base layer 363a1 and the bonding strength reduction body 363a3. Here, as Figure 12 shown, the bonding layer may be formed of a heating wire layer 363a2 or an insulating layer 363a5. The bonding layer can be formed by printing such as screen printing. In this case, in the bonding layer forming operation S30, the bonding layer may be formed to cover the bonding strength reduction body 363a3. At the same time, when the bonding layer is formed of the heating wire layer 363a2, as described above, the bonding layer may be formed of a transition metal material such as platinum. Here, the heating wire layer 363a2 in the bonding layer forming operation S30 is not sintered, but printed in a form containing transition metal powder and a binder. When the sintering operation S60 described later is performed, the heating wire layer 363a2 is firmly bonded to the base layer 363a1 while covering the bonding strength reduction body 363a3.

[0143] Hereinafter, the above heating plate will be described in detail in comparison with a comparative example.

[0144] Figure 16 is a cross-sectional view of a comparative example in which a bonding strength reduction body is not formed. Figure 17 is an enlarged cross-sectional view of a region where a bonding strength reduction body is formed.

[0145] As Figure 16As shown, in a state where the bonding strength reducing body 363a3 is not formed, the base layer 363a1 and the heating wire layer 363a2 expand to different volumes during thermal expansion. In this case, the heating wire layer 363a2 made of a metallic material expands more relative to the bonding surface of the base layer 363a1 than the base layer 363a1, thereby generating interfacial stress to separate the heating wire layer from the bonding surface of the base layer 363a1. Figure 16 The magnitudes of the arrows shown in Figure 16 represent the relative magnitudes of the stress generated when each of the base layer 363a1 and the heating wire layer 363a2 expands. Accordingly, interfacial stress is continuously generated on the bonding surface between the base layer 363a1 and the heating wire layer 363a2, resulting in a problem that the bonding surface eventually breaks. When the bonding surface between the base layer 363a1 and the heating wire layer 363a2 breaks, the heating wire layer 363a2 may be carbonized or unevenly heated, leading to process failure.

[0146] On the other hand, as Figure 17 shown, when the bonding strength reducing body 363a3 is formed on the bonding surface between the base layer 363a1 and the heating wire layer 363a2 as a bonding layer, the bonding area between the base layer 363a1 and the bonding layer is reduced, and the interfacial stress of the bonding surface is also reduced. Therefore, the bonding surface between the base layer 363a1 and the bonding layer is prevented from breaking during thermal expansion. Specifically, the bonding strength reducing body 363a3 absorbs the stress of the heating wire layer 363a2 that expands relatively further, thereby reducing the interfacial stress. In this case, the bonding strength reducing body 363a3 is composed of a plurality of granular bodies 363a3_1 as described above, and can easily absorb the stress generated during thermal expansion, and can be formed such that the heat conduction efficiency is not reduced by the coating layer 363a3_2.

[0147] Meanwhile, the heating plate manufacturing method according to an embodiment of the present invention may further include a terminal connection layer forming operation S40, a terminal holder installing operation S50, and a sintering operation S60.

[0148] Figure 18 For Figure 16 a cross-sectional view of a state where a terminal connection layer is further formed in Figure 16 . Figure 19 For Figure 18 a cross-sectional view of a state where a terminal holder is further formed in Figure 18 .

[0149] In the terminal connection layer forming operation S40, as Figure 18As shown, a terminal connection layer 363a4 is formed on the heating wire layer 363a2. The terminal connection layer 363a4 can be printed on the heating wire layer 363a2. Here, the heating wire layer 363a2 and the terminal connection layer 363a4 are formed in a state without sintering in a form including powder and a binder. In this case, the terminal connection layer 363a4 has a melting point lower than that of the heating wire layer 363a2, and the particle size of the powder is formed to be smaller than the particle size of the powder forming the heating wire layer 363a2. As described above, the terminal connection layer 363a4 can be formed of gold, silver, copper, nickel, or an alloy thereof.

[0150] In the terminal block installation operation S50, as Figure 19 shown, the terminal block 363a5 is installed on the terminal connection layer 363a4.

[0151] In the sintering operation S60, the heating wire layer 363a2 and the terminal connection layer 363a4 can be sintered simultaneously. In this case, a sintering temperature not exceeding the melting point of each of the heating wire layer 363a2, the terminal connection layer 363a4, and the terminal block 363a5 can be formed. For example, the sintering temperature may be raised to a temperature between 400°C and 800°C. When the sintering operation S60 is performed, the particles of the terminal connection layer 363a4 having a smaller diameter and a lower melting point than the heating wire layer 363a2 easily penetrate into the heating wire layer 363a2 and mix.

[0152] Therefore, the heating wire layer 363a2, the terminal connection layer 363a4, and the terminal block 363a5 can be easily combined with surrounding components by only one sintering process. In addition, since the heating wire layer 363a2 is combined in a state where the particles of the terminal connection layer 363a4 penetrate, it has the advantage of maintaining a strong bonding force even at a temperature higher than that of the welding process, and provides the advantage of being able to bond the heating wire layer 363a2 even at a temperature lower than that of the brazing process.

[0153] Finally, after the sintering operation S60 is performed, the power supply line 363a6 of the terminal block 363a5 is connected to the power supply 363a7, and the heating plate 363a is installed inside the housing 361 of the heat treatment chamber 360.

[0154] It should be understood that exemplary embodiments have been disclosed herein, and other modifications are possible. The individual components or features of a particular embodiment are generally not limited to that particular embodiment, but are interchangeable and can be used in the selected embodiment where applicable, even if not specifically shown or described. Such modifications should not be regarded as exceeding the spirit and scope of the present disclosure, and all such modifications that are obvious to those of ordinary skill in the art are intended to be included within the scope of the following claims.

Claims

1. A heating plate for supporting and heating a substrate, the heating plate comprising: a base layer on which a substrate is mounted; a bonding layer bonded to a lower surface of the base layer; as well as A bonding force reducing body is disposed between the base layer and the bonding layer to reduce the interface bonding force between the bonding layer and the base layer.

2. The heating plate according to claim 1, wherein The bonding force reducing body is provided between the base layer and the bonding layer in a state divided into a plurality of regions, and is provided in a dispersed state not connected to each other.

3. The heating plate according to claim 2, wherein: When viewed from above, a plurality of the binding force reducing bodies are arranged and disposed in the form of a lattice.

4. The heating plate according to claim 1, wherein: The bonding force reducing body is in close contact with the base layer to reduce a contact area between the base layer and the bonding layer.

5. The heating plate according to claim 1, wherein The bonding layer is a heating wire layer that is heated when power is supplied or an insulating layer formed of an insulating material.

6. The heating plate according to claim 1, wherein: The base layer and the bonding layer have different coefficients of thermal expansion.

7. The heating plate according to claim 1, wherein: The bonding layer is formed to have a thickness greater than that of the bonding force reducing body to cover a lower surface of the bonding force reducing body.

8. The heating plate according to claim 1, wherein: The binding force reducing body includes a plurality of particles.

9. The heating plate according to claim 8, wherein: The binding force reducing body further includes a coating layer which is coated on an outer surface of the granular body and has a thermal conductivity higher than that of the granular body.

10. The heating plate according to claim 8, wherein The granules have a hollow region formed therein.

11. The heating plate according to claim 8, wherein Gaps are also formed between the particles.

12. A method for manufacturing a heating plate for heating a substrate, the method comprising: A base layer preparation operation, wherein the base layer preparation operation prepares a base layer for a substrate to be mounted; a binding force reducing body forming operation of providing a binding force reducing body on the base layer; a bonding layer forming operation of forming a bonding layer on the base layer and the bonding force reducing body; as well as a sintering operation, wherein the sintering operation sinters the bonding layer, Wherein, in the bonding force reducing body forming operation, the bonding force reducing body is configured to reduce a bonding area between the bonding layer and the base layer.

13. The method according to claim 12, wherein: In the bonding force reducing body forming operation, the bonding force reducing body is divided into a plurality of regions and provided between the base layer and the bonding layer, and each of the plurality of bonding force reducing bodies is dispersed so as not to be connected to each other.

14. The method according to claim 12, wherein: In the binding force reducing body forming operation, the binding force reducing body is disposed in close contact with the base layer.

15. The method according to claim 12, wherein: In the binding force reducing body forming operation, the binding force reducing body is non-chemically bonded to the base layer.

16. The method according to claim 12, wherein: In the bonding layer forming operation, the bonding layer is formed to cover the bonding force reducing body.

17. The method according to claim 12, wherein: The binding force reducing body is formed to include a plurality of granules, and In the bonding layer forming operation, the plurality of granular bodies are disposed in close contact with the bonding layer.

18. The method according to claim 17, wherein: The binding force reducing body further includes a coating layer which is coated on an outer surface of the granular body and has a thermal conductivity higher than that of the granular body.

19. The method according to claim 12, wherein: In the bonding layer forming operation, the bonding layer is formed by heating the wire layer, The method includes: a terminal connection layer forming operation of forming a terminal connection layer on the heating line layer; and a terminal frame installation operation, wherein the terminal frame is installed on the terminal connection layer, and In the sintering operation, the heating line layer and the terminal connection layer are sintered simultaneously.

20. A heating plate for supporting and heating a substrate, the heating plate comprising: a base layer on which a substrate is mounted; a bonding layer bonded to a lower surface of the base layer, formed of a heater layer or an insulating layer, and having a thermal expansion coefficient different from that of the base layer; A bonding force reducing body, the bonding force reducing body being arranged between the base layer and the bonding layer to reduce the interface bonding force between the bonding layer and the base layer; as well as wherein the bonding layer is formed to have a thickness greater than that of the bonding force reducing body so as to cover the lower surface of the bonding force reducing body, and The bonding force reducing body is arranged between the base layer and the bonding layer in a state of being divided into a plurality of regions, and a plurality of the bonding force reducing bodies are arranged in a dispersed state not connected to each other, and when observed from above, a plurality of the bonding force reducing bodies are arranged and arranged in the form of a lattice, and the bonding force reducing body is in close contact with the base layer to reduce the contact area between the base layer and the bonding layer, and the bonding force reducing body includes a plurality of granular bodies having hollow regions formed therein, and the bonding force reducing body also includes a coating layer, which is coated on the outer surface of the granular body and has a thermal conductivity higher than the thermal conductivity of the granular body.

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