Display device and ambient light detection method thereof

Abstract

The embodiment of the invention provides a display device and an ambient light detection method thereof. The display device comprises a first substrate and a first detection module, the first substrate comprises a display area (AA) and a frame area located outside the display area (AA), the first substrate comprises a first substrate and a photosensitive thin film transistor (100), the photosensitive thin film transistor (100) is located in the frame area, and the photosensitive thin film transistor (100) is provided with a first voltage signal and receives ambient light irradiation; the first detection module can detect a first leakage current generated by the photosensitive thin film transistor (100) and determine ambient light color temperature and / or ambient light intensity according to the first leakage current. The display device integrates an ambient light detection function, thereby being beneficial to realizing lightening and thinning of a product and reducing the cost.

Description

Display device and method for detecting ambient light

[0001] This application claims priority to the Chinese patent application filed on October 31, 2023, with application number 202311434669.7 and invention name “A display device and a method for detecting ambient light therefor”, the content of which should be understood as incorporated into this application by reference. Technical Field

[0002] The embodiments of the present disclosure relate to, but are not limited to, the field of display technology, and in particular to a display device and a method for detecting ambient light therefrom. Background Art

[0003] As the primary human-computer interaction interface, flat-panel display technology has been widely adopted in a variety of fields, including lifestyle entertainment, in-vehicle displays, and industrial control. By connecting to external sensors, these interfaces provide a wealth of external information for human reference and can also output control signals through the flat-panel display. Thus, the organic combination of flat-panel display technology and sensors constitutes a key node in human-computer interaction, with flat-panel displays primarily providing display and touch functions.

[0004] Flat panel displays mainly rely on external sensors to obtain external information, which leads to high costs and is not conducive to the lightweight and thinning of the entire machine, affecting the product experience.

[0005] Summary of the Invention

[0006] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0007] An embodiment of the present disclosure provides a display device, comprising:

[0008] A first substrate comprises a first substrate and a photosensitive thin film transistor, wherein the photosensitive thin film transistor is provided on the first substrate, and the photosensitive thin film transistor is provided with a first voltage signal and receives ambient light;

[0009] The first substrate includes a display area and a frame area outside the display area, and the photosensitive thin film transistor is located in the frame area;

[0010] The first detection module is configured to detect a first leakage current generated by the photosensitive thin film transistor and determine the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0011] In some exemplary embodiments, the photosensitive thin film transistor includes a first active layer, a first electrode, and a second electrode, wherein the first electrode and the second electrode are both electrically connected to the first active layer, the first electrode is provided with a first voltage signal, and the first active layer is configured to receive ambient light.

[0012] The first detection module is connected to the second electrode, and the first detection module is configured to detect a first leakage current generated by the second electrode.

[0013] In some exemplary embodiments, the photosensitive thin film transistor is located on a side of the first substrate close to a display side of the display device.

[0014] In some exemplary embodiments, a second substrate is further included, the first substrate is arranged on a side of the second substrate close to the display side of the display device, and the photosensitive thin film transistor is located on a side of the first substrate away from the display side of the display device.

[0015] In some exemplary embodiments, a reference thin film transistor is further included, wherein the reference thin film transistor is provided in the same layer as the photosensitive thin film transistor;

[0016] The third electrode of the reference thin film transistor is provided with a first voltage signal, the first detection module is connected to the fourth electrode of the reference thin film transistor, the first detection module is configured to detect a reference leakage current of the fourth electrode of the reference thin film transistor, and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current and the reference leakage current.

[0017] In some exemplary embodiments, a color filter layer is further included, wherein the color filter layer includes a preset color filter, and the preset color filter is located on a side of the photosensitive thin film transistor facing the ambient light;

[0018] The orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the preset color filter on the first substrate;

[0019] The photosensitive thin film transistors include a first photosensitive thin film transistor, a second photosensitive thin film transistor and a third photosensitive thin film transistor, and the preset color filters include a red color filter, a green color filter and a blue color filter;

[0020] The second electrode of the first photosensitive thin film transistor, the second electrode of the second photosensitive thin film transistor and the second electrode of the third photosensitive thin film transistor are all connected to the first detection module, and the first detection module is configured to detect the three first leakage currents generated by the three second electrodes and determine the color temperature of the ambient light based on the three first leakage currents.

[0021] In some exemplary embodiments, a color filter layer is further included, wherein the color filter layer includes a preset color filter, and the preset color filter is located on a side of the photosensitive thin film transistor facing the ambient light;

[0022] The orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the preset color filter on the first substrate, and the preset color filter includes a green color filter;

[0023] The first detection module is configured to detect a first leakage current of the second electrode of the photosensitive thin film transistor, and determine the ambient light intensity according to the first leakage current of the second electrode of the photosensitive thin film transistor.

[0024] In some exemplary embodiments, the border area includes a first border area and a second border area located on opposite sides of the display area, the first border area includes a fan-shaped routing area and a binding area, the fan-shaped routing area is located between the display area and the binding area, and the photosensitive thin film transistor is located in the second border area.

[0025] In some exemplary embodiments, the first substrate includes a first row of binding pins and a second row of binding pins located in the binding area, the first row of binding pins and the second row of binding pins are arranged in a direction from the fan-out area toward the binding area, and the first row of binding pins is divided into a middle area and end areas located at both ends of the middle area;

[0026] The binding pins in the middle area are connected to the first metal traces in the fan-shaped trace area;

[0027] The display device further includes a second metal trace disposed in the fan-shaped trace area and the binding area;

[0028] A third metal trace is provided between the first row of binding pins and the second row of binding pins, the binding pin of at least one end area is connected to one end of the third metal trace, the other end of the third metal trace extends in a direction away from the middle area and is connected to the second metal trace through a via, the first metal trace and the second metal trace are located on the same layer, and the third metal trace and the second metal trace are located on different layers.

[0029] In some exemplary embodiments, the first substrate further includes a functional unit, the functional unit being located in the second border area, the plurality of photosensitive thin film transistors being arranged in sequence along an extension direction of the second border area, and the functional unit being located between the photosensitive thin film transistors and the display area;

[0030] The display device also includes an ink layer located in the second border area, the second border area includes an ink avoidance area, and the orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the ink avoidance area on the first substrate.

[0031] In some exemplary embodiments, a distance between a center of the photosensitive thin film transistor and a boundary of the display area close to the second border area is 0.08 mm to 0.12 mm.

[0032] In some exemplary embodiments, the first substrate further includes a functional unit, the functional unit including a touch control unit, a data control unit, and an anti-static unit, and the anti-static unit is located on a side of the fan-shaped wiring area close to the display area;

[0033] The first substrate includes a first row of binding pins and a second row of binding pins located in the binding area, the first row of binding pins and the second row of binding pins are arranged in a direction from the fan-shaped routing area toward the binding area, and the touch control unit and the data control unit are located between the first row of binding pins and the second row of binding pins.

[0034] In some exemplary embodiments, a light shielding layer is further included, the light shielding layer is located on a side of the light-sensitive thin film transistor close to the display side of the display device, the first active layer is located between the light shielding layer and the first substrate, and the light shielding layer is provided with an opening;

[0035] The orthographic projection of the opening on the first substrate is located within the orthographic projection of the first active layer on the first substrate, and the photosensitive thin film transistor receives ambient light through the opening.

[0036] In some exemplary embodiments, a preset color filter is further included, wherein the preset color filter is located on a side of the photosensitive thin film transistor close to the display side of the display device, and the preset color filter is located on a side of the light shielding layer close to the photosensitive thin film transistor;

[0037] The orthographic projection of the opening on the first substrate is located within the orthographic projection of the preset color filter on the first substrate.

[0038] In some exemplary embodiments, the photosensitive thin film transistor further includes a first gate, wherein the first gate is located between the first active layer and the first substrate;

[0039] The orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the first gate on the first substrate;

[0040] An opening is provided on the first gate, and the orthographic projection of the opening on the first substrate is located within the orthographic projection of the first active layer on the first substrate. The photosensitive thin film transistor receives ambient light through the opening.

[0041] In some exemplary embodiments, a light-transmitting metal layer is further included, wherein the light-transmitting metal layer is located between the first substrate and the first gate;

[0042] The orthographic projection of the opening on the first substrate is located within the orthographic projection of the light-transmitting metal layer on the first substrate.

[0043] In some exemplary embodiments, a light shielding layer is further included, and the light shielding layer is located on a side of the photosensitive thin film transistor away from the first substrate.

[0044] In some exemplary embodiments, a preset color filter and a buffer layer are further included, wherein the preset color filter is located between the first gate and the first substrate, and the buffer layer is located on a side of the preset color filter facing the first substrate;

[0045] The orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the preset color filter on the first substrate.

[0046] In some exemplary embodiments, the device further includes a light shielding layer, a preset color filter, and a buffer layer, wherein the light shielding layer is located on a side of the photosensitive thin film transistor close to the first substrate, the preset color filter is located between the light shielding layer and the first substrate, and the buffer layer is located on a side of the preset color filter close to the first substrate;

[0047] The photosensitive thin film transistor further includes a first gate, and the first gate is located on a side of the first active layer away from the first substrate;

[0048] The light-shielding layer is provided with an opening, the orthographic projection of the opening on the first substrate is located within the orthographic projection of the first active layer on the first substrate, the orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the preset color filter on the first substrate, and the photosensitive thin film transistor receives ambient light through the opening.

[0049] In some exemplary embodiments, the orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the preset color filter on the first substrate.

[0050] In some exemplary embodiments, a distance between an orthographic projection boundary of the first active layer on the first substrate and an orthographic projection boundary of the preset color filter on the first substrate is greater than or equal to 5 μm.

[0051] In some exemplary embodiments, a distance between an orthographic projection boundary of the opening on the first substrate and an orthographic projection boundary of the first active layer on the first substrate is greater than or equal to 10 μm.

[0052] In some exemplary embodiments, the photosensitive thin film transistor includes a plurality of sub-photosensitive thin film transistors, and the plurality of sub-photosensitive thin film transistors are sequentially arranged along a first direction;

[0053] The sub-photosensitive thin film transistor includes a first sub-pole and a second sub-pole, the first pole includes a plurality of first sub-poles connected to each other, and the second pole includes a plurality of second sub-poles connected to each other;

[0054] The first active layer extends along a first direction, and the orthographic projections of the first sub-pole and the second sub-pole on the first substrate are both located within the orthographic projection of the first active layer on the first substrate.

[0055] In some exemplary embodiments, the number of the openings is the same as the number of the sub-photosensitive thin film transistors, the plurality of openings are arranged at intervals along the first direction, the openings correspond to the sub-photosensitive thin film transistors one-to-one, and the sub-photosensitive thin film transistors receive ambient light through the corresponding openings;

[0056] A ratio of a size of the opening in the first direction to a distance between two adjacent openings is less than or equal to 0.5.

[0057] In some exemplary embodiments, the first sub-electrodes of two adjacent sub-photosensitive thin film transistors are adjacent to each other, the opening extends along the first direction, and the plurality of sub-photosensitive thin film transistors receive ambient light through the opening.

[0058] In some exemplary embodiments, the first substrate further includes a second thin film transistor located in the display area, and the photosensitive thin film transistor is disposed in the same layer as the second thin film transistor.

[0059] In some exemplary embodiments, a light-shielding layer is further included, which is located on the side of the reference thin film transistor facing the display side of the display device, and the orthographic projection of the second active layer of the reference thin film transistor on the first substrate is located within the orthographic projection of the light-shielding layer on the first substrate.

[0060] In some exemplary embodiments, the photosensitive thin film transistor further includes a first gate, the first gate being located between the first active layer and the first substrate, or located on a side of the first active layer away from the first substrate, and a gate insulating layer being provided between the first gate and the first active layer;

[0061] The orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the first gate on the first substrate, and a turn-off signal is applied to the first gate so that the first electrode and the second electrode of the photosensitive thin film transistor are disconnected when there is no ambient light;

[0062] The reference thin film transistor further includes a second gate and a second active layer, the second gate is located between the second active layer and the first substrate, or located on a side of the second active layer away from the first substrate, and a gate insulating layer is provided between the second gate and the second active layer;

[0063] The orthographic projection of the second active layer on the first substrate is located within the orthographic projection of the second gate on the first substrate. A turn-off signal is applied to the second gate to disconnect the third electrode and the fourth electrode of the reference thin film transistor when there is no ambient light.

[0064] An embodiment of the present disclosure provides a method for detecting ambient light of a display device, wherein the method is applied to the above-mentioned display device, and includes:

[0065] detecting a first leakage current of a second electrode of a photosensitive thin film transistor in the display device;

[0066] The ambient light color temperature and / or the ambient light intensity are determined according to the first leakage current.

[0067] In some exemplary embodiments, the present invention further comprises:

[0068] detecting a reference leakage current of a second electrode of a reference thin film transistor;

[0069] Determining the ambient light color temperature and / or ambient light intensity according to the first leakage current includes: determining the ambient light color temperature and / or ambient light intensity according to the first leakage current and the reference leakage current.

[0070] In some exemplary embodiments, the photosensitive thin film transistor includes a first photosensitive thin film transistor, a second photosensitive thin film transistor, and a third photosensitive thin film transistor;

[0071] Detecting a first leakage current of a second electrode of a photosensitive thin film transistor in the display device, comprising: respectively detecting three first leakage currents of a second electrode of a first photosensitive thin film transistor, a second electrode of a second photosensitive thin film transistor, and a second electrode of a third photosensitive thin film transistor;

[0072] Determining the ambient light color temperature according to the first leakage current includes: determining the ambient light color temperature from a leakage current-color temperature data table according to the three first leakage currents, wherein the leakage current-color temperature data table includes correspondences between the three first leakage currents and color temperatures.

[0073] Still other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description.

[0074] Summary of the Figures

[0075] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar components or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0076] FIG1 is a schematic plan view of a first substrate of a display device according to an embodiment of the present disclosure;

[0077] FIG2 is a schematic diagram of a BB cross-section of the photosensitive thin film transistor in FIG1 ;

[0078] FIG3 is a CC cross-sectional schematic diagram of the reference thin film transistor in FIG1 ;

[0079] FIG4 is a schematic plan view of a first substrate of a display device according to another embodiment of the present disclosure;

[0080] FIG5 is a schematic planar structural diagram showing the position of a photosensitive thin film transistor in a substrate according to an embodiment of the present disclosure;

[0081] FIG6 is a schematic planar structural diagram of the position of a photosensitive thin film transistor in a display device according to another embodiment of the present disclosure;

[0082] FIG7 is a schematic diagram of a display device according to another embodiment of the present disclosure;

[0083] FIG8 is a schematic diagram of the first substrate in FIG7 ;

[0084] FIG9 is a schematic cross-sectional view in the DD direction in FIG8 ;

[0085] FIG10 is a schematic cross-sectional view in the EE direction in FIG8 ;

[0086] FIG11 is a planar structural diagram of the position of a photosensitive thin film transistor according to another embodiment of the present disclosure;

[0087] FIG12 is a schematic planar structural diagram of the position of a photosensitive thin film transistor according to another embodiment of the present disclosure;

[0088] FIG13 is a schematic diagram of a first substrate according to another embodiment of the present disclosure;

[0089] FIG14 is a schematic cross-sectional view in the FF direction in FIG13 ;

[0090] FIG15 is a schematic cross-sectional view in the direction HH of FIG13 ;

[0091] FIG16 is a schematic planar structural diagram of the position of a photosensitive thin film transistor according to another embodiment of the present disclosure;

[0092] FIG17 is a schematic planar structural diagram of the position of a photosensitive thin film transistor according to another embodiment of the present disclosure;

[0093] FIG18 is a schematic planar structural diagram of the position of a photosensitive thin film transistor according to another embodiment of the present disclosure;

[0094] FIG19 is a planar structural diagram of the position of a photosensitive thin film transistor according to another embodiment of the present disclosure;

[0095] FIG20 is a schematic cross-sectional view along the GG line in FIG18 ;

[0096] FIG. 21 is a schematic diagram of a reference thin film transistor according to an embodiment of the present disclosure.

[0097] Description of reference numerals:

[0098] 100, photosensitive thin film transistor; 101, first photosensitive thin film transistor; 102, second photosensitive thin film transistor; 103, third photosensitive thin film transistor; 11, first substrate; 121, first gate electrode; 122, second gate electrode; 131, first active layer; 132, second active layer; 141, first electrode; 142, second electrode; 143, third electrode; 144, fourth electrode; 1410, first sub-electrode; 1420, second sub-electrode;

[0099] 200, reference thin film transistor; 21, light shielding layer; 211, opening; 221, preset color filter; 222, transparent metal layer; 223, gate insulating layer; 224, buffer layer; 225, light shielding layer; 226, second insulating layer;

[0100] 31. First voltage signal line; 32. Shutdown voltage signal line; 33. First detection signal line; 34. First row of binding pins; 35. Second row of binding pins; 36. First metal trace; 37. Second metal trace; 38. Third metal trace; 39. Second detection signal line;

[0101] 400, first substrate;

[0102] 500, second substrate;

[0103] 600. Display side.

[0104] Details

[0105] In the following, only certain exemplary embodiments are briefly described. As will be appreciated by those skilled in the art, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure, and different embodiments may be combined in any manner without conflict. Therefore, the drawings and description are to be regarded as illustrative in nature and not restrictive.

[0106] Figure 1 is a planar schematic diagram of the first substrate of a display device according to an embodiment of the present disclosure, Figure 2 is a BB cross-sectional schematic diagram of the photosensitive thin film transistor in Figure 1, and Figure 3 is a CC cross-sectional schematic diagram of the reference thin film transistor in Figure 1. The present disclosure provides a display device, which includes a first substrate and a first detection module. As shown in Figures 1 and 2, the first substrate includes a display area AA and a frame area outside the display area AA. The first substrate includes a first substrate 11 and a photosensitive thin film transistor 100 located on the display side of the first substrate 11 facing the display device, and the photosensitive thin film transistor 100 is located in the frame area. The photosensitive thin film transistor 100 includes a first active layer 131, a first electrode 141 and a second electrode 142, and the first electrode 141 and the second electrode 142 are both electrically connected to the first active layer 131. The first electrode 141 is provided with a first voltage signal, and the first active layer 131 can receive ambient light.

[0107] For example, the first active layer 131 may include a first conductive region and a second conductive region, the first electrode 141 is connected to the first conductive region, and the second electrode 142 is connected to the second conductive region, so that both the first electrode 141 and the second electrode 142 are electrically connected to the first active layer 131. At least the first active layer 131 between the first conductive region and the second conductive region can receive ambient light.

[0108] It should be noted that in the thin film transistor, the material of the first active layer 131 may include semiconductor material, and a patterned semiconductor layer may be formed through a patterning process. The first active layer 131 at least includes the semiconductor material located between the first electrode 141 and the second electrode 142 .

[0109] One of the first electrode 141 and the second electrode 142 may be a source electrode, and the other may be a drain electrode. For example, when the light-sensitive thin film transistor 100 is a P-type transistor, the first electrode 141 may be a drain electrode, and the second electrode 142 may be a source electrode; when the light-sensitive thin film transistor 100 is an N-type transistor, the first electrode 141 may be a source electrode, and the second electrode 142 may be a drain electrode.

[0110] The first substrate may further include a first voltage signal line 31, and the first electrode 141 may be connected to the first voltage signal line 31. The first voltage signal line 31 provides a first voltage signal to the first electrode 141. The specific voltage value of the first voltage signal can be set as needed, as long as the first leakage current can be detected when the first active layer 131 is illuminated by ambient light.

[0111] The first detection module is connected to the second electrode 142 , and is configured to detect a first leakage current generated by the second electrode 142 , and determine the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0112] The material of the first active layer 131 may include semiconductor material. When the first active layer 131 is irradiated by ambient light, the second electrode 142 generates a leakage current. There is a certain correspondence between the leakage current and the color temperature and / or the intensity of the ambient light. Therefore, by detecting the first leakage current generated by the second electrode 142, the color temperature and / or the intensity of the ambient light can be determined based on the first leakage current.

[0113] In the display device of the embodiment of the present disclosure, when the first active layer 131 is irradiated by ambient light, the second electrode 142 generates a leakage current. The first detection module detects the first leakage current of the second electrode 142, and the color temperature and / or intensity of the ambient light can be determined based on the first leakage current. Such a display device integrates an ambient light detection function, and no longer needs to sense the ambient light through an external photosensor, thereby reducing the cost of the display device and facilitating the realization of a lightweight and thin display device.

[0114] In one embodiment, after determining the ambient light color temperature and / or ambient light intensity, the display device may display the ambient light color temperature and / or ambient light intensity to provide the user with ambient light information. The display device may also adjust the color temperature and / or light intensity of the displayed image based on the ambient light color temperature and / or ambient light intensity to facilitate the user to better appreciate the displayed image under ambient light conditions.

[0115] In one embodiment, the first substrate may further include a second thin film transistor located in the display area AA, and the photosensitive thin film transistor 100 is arranged in the same layer as the second thin film transistor. For example, the first active layer 131 of the photosensitive thin film transistor 100 is arranged in the same layer as the active layer of the second thin film transistor, and the source and drain of the photosensitive thin film transistor 100 are arranged in the same layer as the source and drain of the second thin film transistor. When the photosensitive thin film transistor 100 includes a gate, the gate of the photosensitive thin film transistor 100 can be arranged in the same layer as the gate of the second thin film transistor. With such a structure, the arrangement of the photosensitive thin film transistor 100 will not affect the process technology of the first substrate and will not increase the cost of the first substrate.

[0116] It is understandable that during the preparation of the first substrate, each first substrate may have differences due to differences in manufacturing processes, which may affect the first leakage current and further affect the accuracy of the ambient light color temperature and / or ambient light intensity.

[0117] In order to improve the accuracy of the determined ambient light color temperature and / or ambient light intensity, the display device may further include a reference thin film transistor 200. As shown in Figures 1 and 2, the reference thin film transistor 200 is disposed in the same layer as the photosensitive thin film transistor 100. The reference thin film transistor 200 includes a second active layer 132, a third electrode 143, and a fourth electrode 144. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are both connected to the second active layer 132, and the third electrode 143 of the reference thin film transistor 200 is provided with a first voltage signal. Here, the reference thin film transistor 200 is disposed in the same layer as the photosensitive thin film transistor 100, which should be understood as the respective film layers of the reference thin film transistor 200 being disposed in the same layer as the respective film layers of the photosensitive thin film transistor 100. The second active layer 132 of the reference thin film transistor 200 is provided in the same layer as the first active layer 131 of the photosensitive thin film transistor 100 and is formed simultaneously through the same process. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are provided in the same layer as the first electrode 141 and the second electrode 142 of the photosensitive thin film transistor 100 and are formed simultaneously through the same process. In the case of a gate, the gate of the reference thin film transistor 200 is provided in the same layer as the gate of the photosensitive thin film transistor 100 and is formed simultaneously through the same process.

[0118] The display device may further include a light shielding layer 21, which is located in the frame region and on the side of the reference thin-film transistor 200 facing the display side of the display device. As shown in FIG2 , the display side of the display device is the upper side of the first substrate, and the light shielding layer 21 is located on the upper side of the reference thin-film transistor 200. The orthographic projection of the second active layer 132 of the reference thin-film transistor 200 on the first substrate 11 is located within the orthographic projection of the light shielding layer 21 on the first substrate 11. Thus, the light shielding layer 21 can shield the second active layer 132 from ambient light.

[0119] A first voltage signal is provided to the third electrode 143 of the reference thin-film transistor 200, and the first detection module is further connected to the fourth electrode 144 of the reference thin-film transistor 200. The first detection module is further configured to detect a reference leakage current of the fourth electrode 144 of the reference thin-film transistor 200, and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current and the reference leakage current.

[0120] It is understandable that the manufacturing process of the first substrate will affect the first leakage current generated by the photosensitive thin film transistor 100. In this embodiment, the first substrate is provided with a reference thin film transistor 200, and the reference thin film transistor 200 is provided on the same layer as the photosensitive thin film transistor 100. The first detection module can use the reference leakage current to correct the first leakage current to obtain a corrected first leakage current. The corrected first leakage current has eliminated the influence of the manufacturing process on the leakage current. Therefore, the ambient light color temperature and / or ambient light intensity can be more accurately determined based on the corrected first leakage current, thereby avoiding the influence of the manufacturing process on the detection and improving the accuracy of the ambient light color temperature and / or ambient light intensity. The reference thin film transistor 200 can be located in the border area.

[0121] In one embodiment, the display device further includes a color filter layer. As shown in FIG2 , the color filter layer includes a preset color filter 221. The preset color filter 221 is located on the side of the photosensitive thin-film transistor 100 facing the ambient light. The orthographic projection of the first active layer 131 of the photosensitive thin-film transistor 100 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. The photosensitive thin-film transistor 100 includes a first photosensitive thin-film transistor 101, a second photosensitive thin-film transistor 102, and a third photosensitive thin-film transistor 103. The preset color filter 221 includes a red color filter, a green color filter, and a blue color filter. The first photosensitive thin-film transistor 101, the second photosensitive thin-film transistor 102, and the third photosensitive thin-film transistor 103 correspond one-to-one to the red color filter, the green color filter, and the blue color filter.

[0122] For example, the orthographic projection of the first active layer 131 of the first photosensitive thin film transistor 101 on the first substrate 11 is located within the orthographic projection of the first color filter on the first substrate 11 , so that ambient light passes through the first color filter to illuminate the first active layer 131 of the first photosensitive thin film transistor 101 .

[0123] For example, the orthographic projection of the first active layer 131 of the second photosensitive thin film transistor 102 on the first substrate 11 is located within the orthographic projection of the second color filter on the first substrate 11 , so that ambient light passes through the second color filter to illuminate the first active layer 131 of the second photosensitive thin film transistor 102 .

[0124] For example, the orthographic projection of the first active layer 131 of the third photosensitive thin film transistor 103 on the first substrate 11 is located within the orthographic projection of the third color filter on the first substrate 11 , so that ambient light passes through the third color filter to illuminate the first active layer 131 of the third photosensitive thin film transistor 103 .

[0125] The first detection module is connected to the second electrode 142 of the first light-sensitive thin-film transistor 101, the second electrode 142 of the second light-sensitive thin-film transistor 102, and the second electrode 142 of the third light-sensitive thin-film transistor 103. The first detection module is configured to detect three first leakage currents generated by the three second electrodes 142 and determine the ambient light color temperature based on the three first leakage currents.

[0126] The environment can generate light of a preset color after passing through the preset color filter 221. Using three colors of color filters, three colors of light can be generated respectively. After each color of light is irradiated to the first active layer 131 of the corresponding photosensitive thin film transistor 100, the second electrode 142 of the photosensitive thin film transistor 100 can generate a corresponding first leakage current. The first detection module can determine the color temperature of the ambient light based on the three first leakage currents.

[0127] Exemplarily, a leakage current-color temperature data table may be pre-stored in the display device, and the leakage current-color temperature data table includes the correspondence between three first leakage currents and color temperatures. After the first detection module detects the three first leakage currents, the leakage current-color temperature data table may be queried to obtain the ambient light color temperature value.

[0128] For example, the three first leakage currents are a, b, and c, and {a, b, c} correspond to the color temperature value. After obtaining {a, b, c}, the leakage current-color temperature data table can be queried to obtain the ambient light color temperature value.

[0129] The leakage current-color temperature data table can be collected in advance by relevant personnel through experiments. For example, during product testing, the ambient light color temperature can be measured using professional equipment. Then, three first leakage currents {a, b, c} can be measured on the product. The corresponding relationship between the three first leakage currents {a, b, c} and the ambient light color temperature can be established to create a leakage current-color temperature data table. The leakage current-color temperature data table can also be provided by a professional organization.

[0130] In one embodiment, the first color filter may include a red filter; the second color filter may include a green filter; and the third color filter may include a blue filter. It is understood that in the color temperature comparison table, there is a correspondence between color temperature values ​​and colors, and various colors can be obtained by combining red, green, and blue. Therefore, the color corresponding to each color temperature value can be split into a combination of red, green, and blue in different proportions. Correspondingly, each color corresponding to each color temperature value has a corresponding red first leakage current, green first leakage current, and blue first leakage current. Therefore, setting the first color filter to include a red filter, the second color filter to include a green filter, and the third color filter to include a blue filter can more accurately detect the color temperature of ambient light.

[0131] For example, the first detection module can use the reference leakage current of the reference thin-film transistor 200 to calibrate the first leakage current of the first photosensitive thin-film transistor 101, the first leakage current of the second photosensitive thin-film transistor 102, and the first leakage current of the third photosensitive thin-film transistor 103, respectively, to obtain the corresponding corrected first leakage currents. The first detection module can determine the ambient light color temperature based on the three corrected first leakage currents. The obtained ambient light color temperature can avoid the influence of the process technology on the detection, thereby improving the accuracy of the determined ambient light color temperature.

[0132] In one embodiment, the preset color filter 221 includes a green color filter. The first detection module is connected to the second electrode 142 of the light-sensitive thin-film transistor 100. The first detection module is used to detect a first leakage current of the second electrode 142 of the light-sensitive thin-film transistor 100 and determine the ambient light intensity based on the first leakage current of the second electrode 142 of the light-sensitive thin-film transistor 100.

[0133] The green color filter has a high light transmittance and is more sensitive to ambient light. Therefore, the use of the green color filter is more conducive to detecting the first leakage current of the photosensitive thin film transistor 100 and improving the accuracy of the ambient light intensity structure.

[0134] For example, the first leakage current of the photosensitive thin-film transistor 100 can be corrected using the reference leakage current of the reference thin-film transistor 200 to obtain the corrected first leakage current. The first detection module can determine the ambient light intensity based on the corrected first leakage current of the photosensitive thin-film transistor 100. The ambient light intensity obtained in this way can avoid the influence of the process technology on the detection, and improve the accuracy of the determined ambient light intensity.

[0135] When performing ambient light intensity detection, the preset color filter 221 is not limited to a green color filter, and the preset color filter 221 can also be a red color filter or a blue color filter.

[0136] As shown in Figure 1, the border area may include a first border area B1 and a second border area B2, and the first border area B1 and the second border area B2 are located on opposite sides of the display area AA. As shown in Figure 1, the first border area B1 and the second border area B2 are located on the upper and lower sides of the display area AA, the first border area B1 is located on the lower side of the display area AA, and the second border area B2 is located on the upper side of the display area AA. The first border area B1 includes a fan-shaped routing area B11 and a binding area B12. The fan-shaped routing area B11 is located between the display area AA and the binding area B12. The photosensitive thin film transistor 100 can be located in the second border area B2. The reference thin film transistor 200 can be located in the second border area B2.

[0137] The binding area B12 is provided with binding pins for binding electronic components. The signal lines of the display area AA are connected to the binding pins of the binding area B12 through the fan-shaped traces of the fan-shaped trace area B11.

[0138] As shown in FIG1 , the first substrate includes a first row of binding pins 34 and a second row of binding pins 35 located in a binding area B12 . The first row of binding pins 34 and the second row of binding pins 35 are used to bind and connect to electronic components, such as integrated circuit chips. The arrangement direction of the plurality of binding pins in the first row of binding pins 34 and the second row of binding pins 35 is the same as the extension direction of the first border area B1 . In FIG1 , the extension direction of the first border area B1 is horizontal.

[0139] The first row of binding pins 34 and the second row of binding pins 35 are arranged in a direction from the fan-out area B11 toward the binding area B12. In Figure 1, the first row of binding pins 34 and the second row of binding pins 35 are arranged in a vertical direction. There is a gap between the first row of binding pins 34 and the second row of binding pins 35. For example, the first row of binding pins 34 can be output pins, and the second row of binding pins 35 can be input pins.

[0140] The first row of binding pins 34 can be divided into a middle area M and end areas located at both ends of the middle area (for example, a left end area LE and a right end area RE). The middle area M includes at least one binding pin, and the end area E includes at least one binding pin. The fan-shaped routing area B11 can be provided with a first metal routing 36, the binding pins of the middle area M are connected to the first metal routing 36, the upper end of the first metal routing 36 is connected to the signal line of the display area AA, and the lower end of the first metal routing 36 is connected to the first row of binding pins 34 of the middle area M. The first metal routing 36 is a continuous metal routing arranged in the same layer. For example, in Figure 1, the first metal routing 36 may include a first line segment, a second line segment, and a third line segment connected to each other, and the first line segment, the second line segment, and the third line segment are continuous metal routings arranged in the same layer. The first line segment and the third line segment both extend in a vertical direction, and the second line segment extends in an inclined direction.

[0141] As shown in Figure 1, the display device also includes a second metal trace 37, which is located in the fan-shaped trace area B11 and the binding area B12. The second metal trace 37 includes a fourth line segment, a fifth line segment, and a sixth line segment that are connected to each other. The fourth line segment, the fifth line segment, and the sixth line segment are continuous metal traces arranged in the same layer. The fourth line segment and the sixth line segment both extend in a vertical direction, and the fifth line segment extends in an inclined direction. The fourth line segment and the fifth line segment are both located in the fan-shaped trace area B11, and the sixth line segment extends from the fan-shaped trace area B11 to the binding area B12. The second metal trace 37 and the first metal trace 36 are located in the same layer.

[0142] As shown in FIG1 , the binding region B12 is provided with a third metal trace 38 located between the first row of binding pins 34 and the second row of binding pins 35. At least one binding pin in the end region is connected to one end of the third metal trace 38. The other end of the third metal trace 38 extends away from the middle region and is connected to the second metal trace 37 through a via K. For example, in FIG1 , the third metal trace 38 includes a seventh and eighth interconnected segment, with the seventh segment being vertically oriented and the eighth segment being horizontally oriented. The upper end of the seventh segment is connected to the binding pin in the end region, the end of the eighth segment away from the fourth segment is the other end of the third metal trace 38, the end of the eighth segment away from the seventh segment extends away from the middle region M and is connected to the second metal trace 37 through a via K. The end of the eighth segment away from the seventh segment is connected to the lower end of the sixth segment through a via K. The third metal trace 38 and the second metal trace 37 are located on different layers.

[0143] In the related art, the second metal trace 37 is located in the fan-shaped trace area B11. In order to set the second metal trace 37 in the fan-shaped trace area B11, it is necessary to increase the width of the fan-shaped trace area B11. In the embodiment of the present disclosure, the fourth and fifth segments of the second metal trace 37 are set in the fan-shaped trace area B11, and the sixth segment is extended from the fan-shaped trace area B11 to the binding area B12. The binding pin of the end area is connected to the lower end of the sixth segment through the third metal trace 38 through the via K. In this way, the space occupied by the sixth segment in the second metal trace 37 in the fan-shaped trace area B11 can be reduced, which is conducive to reducing the width of the fan-shaped trace area B11, and then reducing the width of the first border area B1 of the display device, that is, reducing the width of the lower border of the display device, which is conducive to achieving a narrow border design.

[0144] As shown in Figure 1 , the two end regions at either end of the middle region can be respectively referred to as the left end region LE and the right end region RE. The connection method of the left end region LE can be symmetrical with that of the right end region RE. For example, the third metal trace 38 includes a left third metal trace 38 located on the left side and a right third metal trace 38 located on the right side. The second metal trace 37 includes a left second metal trace 37 located to the left of the first metal trace 36 and a right second metal trace 37 located to the right of the first metal trace 36. The binding pin of the left end region LE is connected to one end of the left third metal trace 38. The other end of the left third metal trace 38 extends toward the left side away from the middle region and is connected to the left second metal trace 37 through a via K. The binding pin of the right end region is connected to one end of the right third metal trace 38. The other end of the right third metal trace 38 extends toward the right side away from the middle region and is connected to the right second metal trace 37 through a via K.

[0145] It should be noted that the number of binding pins in the left end area and the number of binding pins in the right end area can be set as needed, and the number of binding pins in the left end area and the number of binding pins in the right end area can be the same or different.

[0146] Binding area B12 can be bound and connected to multiple electronic components, such as integrated circuit chips. For example, FIG1 shows a display device connected to two integrated circuit chips. Thus, binding area B12 is provided with two groups of first-row binding pins 34 and second-row binding pins 35. The connection method between these two groups of binding pins and the display area AA signal line can be the same. In the related art, when the pins in the first row of binding pins 34 are all connected to the display area AA signal line via the metal traces of the fan-shaped trace area B11, some functional units in the display device, such as the touch control unit (Tx Switch Unit) and the data control unit (Source Switch Unit), are located between the first row of binding pins 34 and the second row of binding pins 35 in binding area B12.

[0147] In the embodiment of the present disclosure, as shown in FIG1 , the first substrate further includes a functional unit, which is located in the second border region B2, i.e., the upper border. A photosensitive thin-film transistor 100 is located in the second border region B2, and is located on a side of the functional unit away from the display area AA. When there are multiple photosensitive thin-film transistors 100, i.e., two or more, the multiple photosensitive thin-film transistors 100 are arranged sequentially along the extension direction of the second border region B2, with the functional unit located between the photosensitive thin-film transistor 100 and the display area AA.

[0148] Exemplarily, the photosensitive thin film transistor 100 and the reference thin film transistor 200 are arranged in sequence along the extension direction of the second border area B2. For example, in Figure 1, the first photosensitive thin film transistor 101, the second photosensitive thin film transistor 102, the third photosensitive thin film transistor 103 and the reference thin film transistor 200 are arranged in sequence along the horizontal direction.

[0149] For example, the functional unit includes a touch control unit (Tx Switch Unit), a data control unit (Source Switch Unit), and an anti-static unit (ESD Unit). As shown in Figure 1, the ESD unit, data control unit, and touch control unit are arranged sequentially in the second border region B2, away from the display area AA. The photosensitive thin-film transistor 100 and the reference thin-film transistor 200 are located on the side of the touch control unit away from the display area AA. The distance d1 between the centers of the photosensitive thin-film transistor 100 and the reference thin-film transistor 200 and the boundary of the display area AA near the second border region B2 (i.e., the upper boundary of the display area AA) is approximately 0.47 mm.

[0150] The display device further includes an ink layer located in the second border region B2. The second border region B2 is provided with an ink avoidance region 300. The boundary of the ink avoidance region 300 is shown in FIG1 . The orthographic projection of the first active layer 131 of the photosensitive thin film transistor 100 on the first substrate 11 is located within the orthographic projection of the ink avoidance region 300 on the first substrate 11.

[0151] Typically, a display device includes a cover plate that is fastened to a first substrate. An ink layer is typically disposed between the first substrate and the cover plate. The outer boundary of the ink layer is along the edge of the first substrate, and the inner boundary of the ink layer is typically approximately 0.4 mm from the upper boundary of the display area AA. To prevent the ink layer from covering the photosensitive thin-film transistor 100 and affecting the photosensitive thin-film transistor 100 from receiving ambient light, the embodiment of the present disclosure provides an ink avoidance area 300 in the second border area B2, and the orthographic projection of the first active layer 131 of the photosensitive thin-film transistor 100 on the first substrate 11 is located within the orthographic projection of the ink avoidance area 300 on the first substrate 11. Thus, the first active layer 131 of the photosensitive thin-film transistor 100 can avoid the ink, preventing the ink from affecting the first active layer 131 from receiving ambient light.

[0152] Figure 4 is a planar schematic diagram of the first substrate of the display device of another embodiment of the present disclosure. In another embodiment, as shown in Figure 4, the photosensitive thin film transistor 100 and the reference thin film transistor 200 are located in the second border area B2 (i.e., the upper border area). The photosensitive thin film transistor 100 and the reference thin film transistor 200 are arranged in sequence along the extension direction of the second border area B2. For example, in Figure 4, the first photosensitive thin film transistor 101, the second photosensitive thin film transistor 102, the third photosensitive thin film transistor 103 and the reference thin film transistor 200 are arranged in sequence along the horizontal direction. The distance d2 between the center of the photosensitive thin film transistor 100 and the reference thin film transistor 200 and the boundary of the display area AA close to the second border area B2 (i.e., the upper boundary of the display area AA) is 0.08mm to 0.12mm. Exemplarily, d2 can be 0.1mm, at which time the photosensitive thin film transistor 100 and the reference thin film transistor 200 can avoid the ink layer.

[0153] As shown in Figure 4 , the first substrate may further include functional units, including a touch control unit, a data control unit, and an anti-static unit. The anti-static unit may be located in the fan-shaped wiring area B11 near the display area AA. In Figure 4 , the anti-static unit is located in the fan-shaped wiring area B11 and is disposed near the display area AA.

[0154] As shown in FIG4 , the first substrate includes a first row of binding pins 34 and a second row of binding pins 35 located in a binding area B12 . The first row of binding pins 34 and the second row of binding pins 35 are used to bind and connect to electronic components, such as integrated circuit chips. The arrangement direction of the plurality of binding pins in the first row of binding pins 34 and the second row of binding pins 35 is the same as the extension direction of the first border area B1 . In FIG4 , the extension direction of the first border area B1 is horizontal.

[0155] The first row of binding pins 34 and the second row of binding pins 35 are arranged in a direction from the fan-out area B11 toward the binding area B12. In Figure 4, the first row of binding pins 34 and the second row of binding pins 35 are arranged in a vertical direction. There is a gap between the first row of binding pins 34 and the second row of binding pins 35. For example, the first row of binding pins 34 can be output pins, and the second row of binding pins 35 can be input pins.

[0156] For example, the touch control unit and the data control unit can be located in the binding area B12, and between the first row of binding pins 34 and the second row of binding pins 35. The first row of binding pins 34 are connected to the signal lines of the display area AA through the fan-shaped metal traces located in the fan-shaped trace area B11.

[0157] In the embodiment of FIG4 , the first row of binding pins 34 are connected to the signal lines of the display area AA via fan-shaped metal traces, such as the first metal trace 36. Therefore, the fan-shaped trace area B11 needs to have sufficient width to allow all pins in the first row of binding pins 34 to be connected to the signal lines of the display area AA via the fan-shaped metal traces. Therefore, the width of the fan-shaped trace area B11 in the embodiment of FIG4 is greater than the width of the fan-shaped trace area B11 in the embodiment of FIG1 . Consequently, the width of the first border area B1 (lower border area) in the embodiment of FIG4 is greater than the width of the first border area B1 (lower border area) in the embodiment of FIG1 .

[0158] Figure 5 is a schematic planar structural diagram of the position of the photosensitive thin film transistor in the display substrate according to one embodiment of the present disclosure. The BB cross-sectional schematic diagram in Figure 5 can refer to Figure 2; Figure 6 is a schematic planar structural diagram of the position of the photosensitive thin film transistor in the display device according to another embodiment of the present disclosure. The photosensitive thin film transistor 100 may include a plurality of sub-photosensitive thin film transistors 110, and the plurality of sub-photosensitive thin film transistors 110 are arranged in sequence along a first direction. The first direction may be the extension direction of the border area. For example, in the embodiments of Figures 1 and 4, the photosensitive thin film transistor 100 is located in the second border area B2, and the extension direction of the second border area B2 is the horizontal direction. The plurality of sub-photosensitive thin film transistors 110 may be arranged in sequence along the horizontal direction. Figures 5 and 6 show one of the sub-photosensitive thin film transistors 110.

[0159] As shown in Figures 5 and 6, the sub-photosensitive thin film transistor 110 may include a first sub-pole 1410 and a second sub-pole 1420. The first pole 141 includes a plurality of interconnected first sub-poles 1410, and the second pole 142 may include a plurality of interconnected second sub-poles 1420. The first active layer 131 extends along a first direction, and the orthographic projections of the first sub-pole 1410 and the second sub-pole 1420 on the first substrate 11 are both located within the orthographic projection of the first active layer 131 on the first substrate 11.

[0160] For example, in FIG5 , the photosensitive thin film transistor 100 includes eight sub-photosensitive thin film transistors, the first sub-electrodes of the eight sub-photosensitive thin film transistors are interconnected as a whole to form a first electrode 141 of the photosensitive thin film transistor 100, and the second sub-electrodes of the eight sub-photosensitive thin film transistors are interconnected as a whole to form a second electrode 142 of the photosensitive thin film transistor 100. In FIG6 , the photosensitive thin film transistor 100 includes four sub-photosensitive thin film transistors, the first sub-electrodes of the four sub-photosensitive thin film transistors are interconnected to form the first electrode 141 of the photosensitive thin film transistor 100, and the second sub-electrodes of the four sub-photosensitive thin film transistors are interconnected to form the second electrode 142 of the photosensitive thin film transistor 100.

[0161] The display device also includes a light-shielding layer 21 located on the display side of the photosensitive thin-film transistor 100 facing the display device. The light-shielding layer 21 is provided with an opening 211, and the boundary of the opening 211 is shown in Figures 5 and 6. The orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the first active layer 131 on the first substrate 11, and the first active layer of the sub-photosensitive thin-film transistor receives ambient light through the opening 211. At least part of the first sub-pole and the second sub-pole of each sub-photosensitive thin-film transistor is located within the opening 211, so that when the first active layer 131 receives ambient light through the opening, each sub-photosensitive thin-film transistor can generate an induced leakage current. The photosensitive thin-film transistor 100 is equivalent to a plurality of sub-photosensitive thin-film transistors connected in parallel, which will greatly increase the value of the first leakage current and facilitate the detection of the first leakage current.

[0162] It should be noted that the area of ​​the first active layer 131 exposed through the opening 211 can be a channel area. When the first active layer 131 receives ambient light through the opening 211, the channel area can generate current, so that the second electrode 142 of the photosensitive thin film transistor 100 can generate a first leakage current.

[0163] In one embodiment, as shown in FIG5 , the first sub-electrodes of two adjacent sub-photosensitive thin-film transistors are adjacent to each other, and the opening 211 extends along the first direction. Here, the first sub-electrodes of two adjacent sub-photosensitive thin-film transistors are adjacent to each other, which can be understood as the orthographic projections of the first sub-electrodes of the two adjacent sub-photosensitive thin-film transistors on the first substrate 11 having an overlapping region. For example, in FIG5 , the orthographic projections of the first sub-electrode 1410a of the sub-photosensitive thin-film transistor and the first sub-electrode 1410b of the sub-photosensitive thin-film transistor on the first substrate 11 have an overlapping region.

[0164] In FIG5 , each sub-photosensitive thin-film transistor receives ambient light through the opening 211. A distance w1 between the orthographic projection boundary of the opening 211 on the first substrate 11 and the orthographic projection boundary of the first active layer 131 on the first substrate 11 is greater than or equal to 10 μm. In other words, one photosensitive thin-film transistor 100 corresponds to one opening 211, and each sub-photosensitive thin-film transistor in the photosensitive thin-film transistor 100 receives ambient light through the same opening.

[0165] In another embodiment, as shown in FIG6 , the number of openings 211 is the same as the number of sub-photosensitive thin film transistors. The plurality of openings 211 are spaced apart along the first direction, and the openings 211 correspond one-to-one to the sub-photosensitive thin film transistors. The sub-photosensitive thin film transistors receive ambient light through the corresponding openings 211. The ratio of the dimension w2 of the opening 211 in the first direction to the spacing w3 between two adjacent openings 211 is less than or equal to 0.5. In this way, the first sub-electrodes of two adjacent sub-photosensitive thin film transistors are spaced a certain distance apart and do not touch each other.

[0166] In the embodiment shown in FIG5 , the first sub-electrodes of two adjacent sub-photosensitive thin-film transistors are adjacent to each other. In the embodiment shown in FIG6 , the first sub-electrodes of two adjacent sub-photosensitive thin-film transistors are spaced a certain distance apart. While maintaining the same performance, the photosensitive thin-film transistor 100 in the embodiment shown in FIG5 occupies less space in the first direction. However, the opening 211 in the embodiment shown in FIG5 is relatively large, and the risk of visible exposure of the photosensitive thin-film transistor through the opening is higher. The smaller opening 211 in the embodiment shown in FIG6 significantly reduces the risk of visible exposure, but the photosensitive thin-film transistor 100 occupies a larger space in the first direction. In the embodiment shown in FIG6 , the ratio of the dimension w2 of the opening 211 in the first direction to the spacing w3 between the two adjacent openings is less than or equal to 0.5. This ensures that the dimension of the opening 211 in the first direction is smaller than the dimension of the light-shielding layer 21 between the two openings 211, further reducing the risk of visible exposure of the photosensitive thin-film transistor through the opening.

[0167] In one embodiment, as shown in Figures 5 and 6, the display device may further include a preset color filter 221 located on the display side of the photosensitive thin film transistor 100 facing the display device, and the orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. In such a structure, ambient light passes through the preset color filter 221 and is irradiated onto the photosensitive thin film transistor 100. The photosensitive thin film transistor 100 can generate a first leakage current corresponding to the preset color light and detect the light intensity of the preset color light in the ambient light. Exemplarily, the preset color filter 221 may include a first color filter, a second color filter, or a third color filter. The first color filter, the second color filter, and the third color filter may be a red color filter, a green color filter, and a blue color filter, respectively.

[0168] As shown in Figures 5 and 6 , the orthographic projection of the first active layer 131 on the first substrate 11 lies within the orthographic projection of the preset color filter 221 on the first substrate 11. The distance w4 between the boundary of the orthographic projection of the first active layer 131 on the first substrate 11 and the boundary of the orthographic projection of the preset color filter 221 on the first substrate 11 is greater than or equal to 5 μm. This arrangement ensures that all ambient light entering the opening 211 passes through the preset color filter 221, preventing light of non-preset colors from entering the opening and affecting detection accuracy.

[0169] Exemplarily, the distance w1 between the orthographic projection boundary of the opening 211 on the first substrate 11 and the orthographic projection boundary of the first active layer 131 on the first substrate 11 is greater than or equal to 10 μm, and the distance w4 between the orthographic projection boundary of the first active layer 131 on the first substrate 11 and the orthographic projection boundary of the preset color filter 221 on the first substrate 11 is greater than or equal to 5 μm.

[0170] In one embodiment, the color filter layer can be a film layer disposed on the first substrate. For example, the first substrate can be an organic light-emitting diode (OLED) substrate. The first substrate further includes an organic light-emitting diode (OLED) device located on the side of the photosensitive thin-film transistor 100 facing away from the first substrate 11 and located in the display area AA, and an encapsulation layer 15 located on the side of the OLED device facing away from the first substrate 11. As shown in Figures 2 and 3, the color filter layer (e.g., a preset color filter 221) can be located on the side of the encapsulation layer 15 facing away from the first substrate 11.

[0171] The light-shielding layer 21 can be a film layer arranged on the first substrate. For example, the light-shielding layer 21 can be located between the encapsulation layer 15 and the color filter layer (for example, the preset color filter 221), or the light-shielding layer 21 is located on the side of the color filter layer (for example, the preset color filter 221) facing away from the first substrate 11.

[0172] In one embodiment, the display device may further include a second substrate, which may be a color filter substrate. The second substrate is arranged in a cell-aligned relationship with the first substrate. The second substrate may include a second underlay, a light shielding layer 21 disposed on the side of the second underlay facing the first substrate, and a color filter layer. For example, the light shielding layer 21 is located on the side of the second underlay facing the first substrate, and the color filter layer is located on the side of the light shielding layer 21 facing the first substrate.

[0173] The color filter layer may further include a display color filter located in the display area AA. Thus, the preset color filter 221 corresponding to the photosensitive thin film transistor 100 is disposed in the same layer as the display color filter in the display area AA, which does not affect the manufacturing process of the display device.

[0174] The display device may further include a black matrix located in the display area AA and between two adjacent sub-pixels. The light shielding layer 21 may be provided on the same layer as the black matrix. Thus, the provision of the light shielding layer 21 will not affect the manufacturing process of the display device.

[0175] In one embodiment, the first substrate may further include a second thin film transistor located in the display area AA, and the photosensitive thin film transistor 100 and the second thin film transistor may be provided on the same layer. That is, the first active layer 131 of the photosensitive thin film transistor 100 may be provided on the same layer as the active layer of the second thin film transistor, and the source and drain of the photosensitive thin film transistor 100 may be provided on the same layer as the source and drain of the second thin film transistor. Thus, providing the photosensitive thin film transistor 100 in the border area will not affect the process technology of the first substrate. For example, the reference thin film transistor 200 and the second thin film transistor may be provided on the same layer.

[0176] In one embodiment, as shown in FIG2 , the photosensitive thin film transistor 100 may further include a first gate 121, which may be located between the first active layer 131 and the first substrate 11. The orthographic projection of the first active layer 131 on the first substrate 11 is located within the orthographic projection of the first gate 121 on the first substrate 11. The material of the first gate 121 may be an opaque metal. With such a structure, the first gate 121 can block light from the back side of the display device from irradiating the first active layer 131, thereby preventing the back side light from affecting the first leakage current and further improving the accuracy of the detection.

[0177] The reference thin-film transistor 200 may further include a second gate 122, which may be located between the second active layer 132 and the first substrate 11. The orthographic projection of the second active layer 132 on the first substrate 11 is located within the orthographic projection of the second gate 122 on the first substrate 11. The second gate 122 may be made of an opaque metal. With this structure, the second gate 122 can block light from the back side of the display device from irradiating the second active layer 132, preventing the back side light from affecting the reference leakage current and ensuring the comparative performance of the reference thin-film transistor 200.

[0178] The first gate electrode 121 and the second gate electrode 122 may be provided in the same layer. In order to reduce the influence of the first substrate manufacturing process on the performance of the photosensitive thin film transistor, the structure of the reference thin film transistor 200 and the photosensitive thin film transistor 100 may be the same.

[0179] In one embodiment, to further ensure the performance of the light-sensitive thin film transistor 100, a shutdown signal can be applied to the first gate 121 to disconnect the first electrode 141 and the second electrode 142 when there is no ambient light. For example, when the light-sensitive thin film transistor 100 is a PMOS transistor, a high-level signal can be applied to the first gate 121 to ensure that the first electrode 141 and the second electrode 142 of the light-sensitive thin film transistor 100 are completely disconnected when there is no ambient light; when the light-sensitive thin film transistor 100 is an NMOS transistor, a low-level signal can be applied to the first gate 121 to ensure that the first electrode 141 and the second electrode 142 of the light-sensitive thin film transistor 100 are completely disconnected when there is no ambient light.

[0180] A shutdown signal can be applied to the second gate 122 to disconnect the third electrode 143 and the fourth electrode 144 when there is no ambient light. For example, when the reference thin film transistor 200 is a PMOS transistor, a high-level signal can be applied to the second gate 122 to ensure that the third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are completely disconnected when there is no ambient light. When the reference thin film transistor 200 is an NMOS transistor, a low-level signal can be applied to the second gate 122 to ensure that the third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are completely disconnected when there is no ambient light.

[0181] For example, as shown in Figures 1 and 2 , the first electrode 141 of the photosensitive thin-film transistor 100 and the third electrode 143 of the reference thin-film transistor 200 can be connected to the first voltage signal line 31. The first voltage signal line 31 is connected to the first pin of the binding area B12, and a first voltage signal can be provided to the first voltage signal line 31 via the first pin. In Figures 1 and 4 , the first electrodes of the first photosensitive thin-film transistor 101 and the second photosensitive thin-film transistor 102 are connected to the first voltage signal line 31a; the first electrode of the third photosensitive thin-film transistor 103 and the third electrode of the reference thin-film transistor 200 are connected to the first voltage signal line 31b.

[0182] The second electrode 142 of the photosensitive thin-film transistor 100 can be connected to a corresponding first detection signal line, which can be connected to the second pin of the binding area B12. The first detection module can be connected to the second pin, and the first detection module detects the first leakage current through the second pin. For example, in Figures 1 and 4, the second electrode of each photosensitive thin-film transistor is connected to a first detection signal line 33.

[0183] The fourth electrode 144 of the reference thin film transistor 200 can be connected to the corresponding second detection signal line 39, which can be connected to the third pin of the binding area B12. The first detection module can be connected to the third pin and detect the reference leakage current through the third pin.

[0184] The photosensitive thin-film transistor 100 and the reference thin-film transistor 200 are of the same type of thin-film transistor. Thus, the first gate 121 and the second gate 122 can be connected to the off-voltage signal line 32. The off-voltage signal line 32 is connected to the fourth pin of the binding region B12. The fourth pin can provide an off-voltage to the off-voltage signal line, thereby providing an off-voltage to the first gate 121 and the second gate 122. In Figures 1 and 4, the first gates of the first photosensitive thin-film transistor 101 and the second photosensitive thin-film transistor 102 are connected to the off-voltage signal line 32a; the first gate of the third photosensitive thin-film transistor 103 and the second gate of the reference thin-film transistor 200 are connected to the off-voltage signal line 32b.

[0185] The second row of binding pins 35 includes a first pin, a second pin, a third pin or a fourth pin.

[0186] It should be noted that, in the first substrate, an insulating layer needs to be provided between two adjacent conductive layers. For example, in Figures 2 and 3, a gate insulating layer is provided between the first gate 121 and the first active layer 131, and a gate insulating layer is provided between the second gate 122 and the second active layer 132.

[0187] The present disclosure also provides a method for detecting ambient light of a display device, which is applicable to the display device in any embodiment of the present disclosure. The method for detecting ambient light of a display device may include steps S11 and S12.

[0188] In step S11 , a first leakage current of the second electrode 142 of the photosensitive thin film transistor 100 in the display device is detected.

[0189] Step S12: determining the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0190] In one embodiment, the method for detecting ambient light may further include: step S13 , detecting a reference leakage current of the second electrode 142 of the reference thin film transistor 200 .

[0191] Determining the ambient light color temperature and / or ambient light intensity according to the first leakage current may include: determining the ambient light color temperature and / or ambient light intensity according to the first leakage current and a reference leakage current.

[0192] In one embodiment, the photosensitive thin film transistor 100 includes a first photosensitive thin film transistor, a second photosensitive thin film transistor, and a third photosensitive thin film transistor.

[0193] Detecting the first leakage current of the second electrode 142 of the photosensitive thin film transistor 100 in the display device may include respectively detecting three first leakage currents of the second electrode of the first photosensitive thin film transistor, the second electrode of the second photosensitive thin film transistor, and the second electrode of the third photosensitive thin film transistor.

[0194] Determining the ambient light color temperature according to the first leakage current includes: determining the ambient light color temperature from a leakage current-color temperature data table according to the three first leakage currents, wherein the leakage current-color temperature data table includes correspondences between the three first leakage currents and the color temperatures.

[0195] Figure 7 is a schematic diagram of a display device according to another embodiment of the present disclosure. Figure 8 is a schematic diagram of the first substrate in Figure 7. Figure 9 is a schematic cross-sectional diagram along the DD axis in Figure 8. Figure 10 is a schematic cross-sectional diagram along the EE axis in Figure 8. In some exemplary embodiments, as shown in Figures 7 to 10, the display device further includes a second substrate 500. The first substrate 400 is disposed on a side of the second substrate 500 that is closer to the display side 600 of the display device. The first substrate 400 and the second substrate 500 are stacked in a third direction, which is perpendicular to the first substrate 400, which is perpendicular to the first direction, which is perpendicular to the second direction, and which is perpendicular to the first direction. The display side 600 can be the side of the display device that emits light and displays an image, or it can be the side where ambient light enters the display device. The display device can achieve a borderless or minimal border around the image displayed by the display device. When the display device is in use, the display side 600 of the display device faces the viewer. Because the first substrate 400 is disposed on a side of the second substrate 500 that is closer to the viewer, the first substrate 400 is closer to the viewer than the second substrate 500.

[0196] In some exemplary embodiments, as shown in Figures 7 to 10, the first substrate 400 includes a first substrate 11 and a photosensitive thin film transistor 100. The photosensitive thin film transistor 100 is located on a side of the first substrate 11 away from the display side 600 of the display device, and the photosensitive thin film transistor 100 is located in the second border area B2. The photosensitive thin film transistor 100 includes a first active layer 131, a first electrode 141, and a second electrode 142. The first electrode 141 and the second electrode 142 are both electrically connected to the first active layer 131. The first electrode 141 is provided with a first voltage signal, and the first active layer 131 is capable of receiving ambient light. The first detection module is connected to the second electrode 142. The first detection module can detect a first leakage current generated by the second electrode 142 and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current. In the display device of the embodiment of the present disclosure, when the first active layer 131 is irradiated by ambient light, the second electrode 142 generates a leakage current, and the first detection module detects the first leakage current of the second electrode 142. The color temperature and / or the intensity of the ambient light can be determined based on the first leakage current. Such a display device integrates the ambient light detection function, and no longer needs to sense the ambient light through an external photosensor, which reduces the cost of the display device and is conducive to achieving a lightweight effect of the display device. After determining the color temperature and / or the intensity of the ambient light, the display device can display the color temperature and / or the intensity of the ambient light to provide the user with ambient light information. The display device can also adjust the color temperature and / or light intensity of the display screen according to the color temperature and / or the intensity of the ambient light, so that the user can better appreciate the display screen under ambient light.

[0197] In some exemplary embodiments, as shown in Figures 7 to 10, the display device includes a reference thin film transistor 200, which is disposed in the same layer as the photosensitive thin film transistor 100. The reference thin film transistor 200 includes a second active layer 132, a third electrode 143, and a fourth electrode 144. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are both connected to the second active layer 132, and the third electrode 143 of the reference thin film transistor 200 is provided with a first voltage signal. Here, the reference thin film transistor 200 is disposed in the same layer as the photosensitive thin film transistor 100, which should be understood as meaning that the various film layers of the reference thin film transistor 200 are manufactured through the same process and / or disposed in the same layer as the various film layers of the photosensitive thin film transistor 100. The second active layer 132 of the reference thin film transistor 200 is provided in the same layer as the first active layer 131 of the photosensitive thin film transistor 100 and is formed simultaneously through the same process. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are provided in the same layer as the first electrode 141 and the second electrode 142 of the photosensitive thin film transistor 100 and are formed simultaneously through the same process. The gate of the reference thin film transistor 200 is provided in the same layer as the gate of the photosensitive thin film transistor 100 and is formed simultaneously through the same process.

[0198] In some exemplary embodiments, as shown in Figures 7 to 10, the display device includes a light-shielding layer (not shown in the figures), which is located in the border area and on the side of the reference thin film transistor 200 and the photosensitive thin film transistor 100 away from the first substrate 11. The orthographic projections of the reference thin film transistor 200 and the photosensitive thin film transistor 100 on the first substrate 11 are both located within the orthographic projection of the light-shielding layer (not shown in the figures) on the first substrate 11. The light-shielding layer (not shown in the figures) can prevent light emitted by the light source of the display device from affecting the reference thin film transistor 200 and the photosensitive thin film transistor 100.

[0199] In some exemplary embodiments, as shown in Figures 7 to 10, a first voltage signal is provided to the third electrode 143 of the reference thin-film transistor 200, and the first detection module is further connected to the fourth electrode 144 of the reference thin-film transistor 200. The first detection module is further configured to detect a reference leakage current of the fourth electrode 144 of the reference thin-film transistor 200 and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current and the reference leakage current. The manufacturing process of the first substrate may affect the first leakage current generated by the photosensitive thin-film transistor 100. In this embodiment, the first substrate 400 is provided with a photosensitive thin-film transistor 100 and a reference thin-film transistor 200, and the reference thin-film transistor 200 is disposed on the same layer as the photosensitive thin-film transistor 100. The first detection module can use the reference leakage current to correct the first leakage current to obtain a corrected first leakage current. The corrected first leakage current eliminates the effects of the manufacturing process on the leakage current. Therefore, the corrected first leakage current can more accurately determine the ambient light color temperature and / or ambient light intensity, thereby avoiding the effects of the manufacturing process on the detection and improving the accuracy of the ambient light color temperature and / or ambient light intensity. The reference thin film transistor 200 may be located in the second border area B2 .

[0200] In some exemplary embodiments, as shown in Figures 7 to 10, the photosensitive thin-film transistor 100 may further include a first gate 121. The first gate 121 may be located between the first active layer 131 and the first substrate 11. The orthographic projection of the first active layer 131 on the first substrate 11 is located within the orthographic projection of the first gate 121 on the first substrate 11. The first gate 121 may be made of an opaque metal. The reference thin-film transistor 200 may include a second gate 122. The second gate 122 may be located between the second active layer 132 and the first substrate 11. The orthographic projection of the second active layer 132 on the first substrate 11 is located within the orthographic projection of the second gate 122 on the first substrate 11. The second gate 122 may be made of an opaque metal. The first gate 121 and the second gate 122 may be provided on the same layer.

[0201] In some exemplary embodiments, as shown in Figures 7 to 10, an opening 211 is defined in the first gate 121. The orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the first active layer 131 on the first substrate 11. The light-sensitive thin film transistor 100 receives ambient light through the opening 211. The first substrate 400 includes a light-transmitting metal layer 222, which is located between the first substrate 11 and the first gate 121. The orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the light-transmitting metal layer 222 on the first substrate 11. The light-transmitting metal layer 222 can be made of a light-transmitting metal material, allowing ambient light to pass through and illuminate the first active layer 131. A gate insulating layer 223 is defined between the first gate 121 and the first active layer 131. The gate insulating layer 223 fills the opening 211 and covers a portion of the surface of the light-transmitting metal layer 222 away from the first substrate 11.

[0202] In some exemplary embodiments, as shown in Figures 7 to 10, the first electrode 141 of the photosensitive thin-film transistor 100 and the third electrode 143 of the reference thin-film transistor 200 can be connected to the first voltage signal line 31, which is connected to the first pin of the binding area B12. A first voltage signal can be provided to the first voltage signal line 31 via the first pin. The first electrode of the photosensitive thin-film transistor 100 is connected to the first voltage signal line 31a, and the third electrode of the reference thin-film transistor 200 is connected to the first voltage signal line 31b. The second electrode 142 of the photosensitive thin-film transistor 100 can be connected to a corresponding first detection signal line, which can be connected to the second pin of the binding area B12. The first detection module can be connected to the second pin and detect the first leakage current via the second pin. The fourth electrode 144 of the reference thin-film transistor 200 can be connected to the corresponding second detection signal line 39, which can be connected to the third pin of the binding area B12. The first detection module can be connected to the third pin and detect the reference leakage current via the third pin. The photosensitive thin-film transistor 100 and the reference thin-film transistor 200 are of the same type of thin-film transistor. Thus, the first gate 121 and the second gate 122 can be connected to the off-voltage signal line 32. The off-voltage signal line 32 is connected to the fourth pin of the binding region B12. The fourth pin can provide an off-voltage to the off-voltage signal line, thereby providing an off-voltage to the first gate 121 and the second gate 122. The first gate of the photosensitive thin-film transistor 100 is connected to the off-voltage signal line 32a, and the second gate of the reference thin-film transistor 200 is connected to the off-voltage signal line 32b.

[0203] Figure 11 is a schematic planar structural diagram of the location of a photosensitive thin film transistor according to another embodiment of the present disclosure, and Figure 12 is a schematic planar structural diagram of the location of a photosensitive thin film transistor according to another embodiment of the present disclosure. In some exemplary embodiments, as shown in Figures 11 and 12, the photosensitive thin film transistor 100 may include multiple sub-photosensitive thin film transistors 110, with the multiple sub-photosensitive thin film transistors 110 arranged sequentially along a first direction. The sub-photosensitive thin film transistors 110 may include a first sub-pole 1410 and a second sub-pole 1420. The first pole 141 includes multiple interconnected first sub-poles 1410, and the second pole 142 includes multiple interconnected second sub-poles 1420. The first active layer 131 extends along the first direction, and the orthographic projections of the first sub-pole 1410 and the second sub-pole 1420 on the first substrate 11 are both located within the orthographic projection of the first active layer 131 on the first substrate 11. The orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the first active layer 131 on the first substrate 11. The first sub-electrodes of two adjacent sub-photosensitive thin film transistors are adjacent to each other, and the opening 211 extends along the first direction. Here, the first sub-electrodes of two adjacent sub-photosensitive thin film transistors are adjacent to each other, which can be understood as the orthographic projections of the first sub-electrodes of the two adjacent sub-photosensitive thin film transistors on the first substrate 11 have an overlapping area.

[0204] In some exemplary embodiments, as shown in Figures 11 and 12, the distance between the orthographic projection boundary of the opening 211 on the first substrate 11 and the orthographic projection boundary of the first active layer 131 on the first substrate 11 is w1, and w1 is greater than or equal to 10μm. In some exemplary embodiments, the number of openings 211 is the same as the number of sub-photosensitive thin-film transistors. A plurality of openings 211 are arranged at intervals along the first direction, and the openings 211 correspond one-to-one to the sub-photosensitive thin-film transistors, and the sub-photosensitive thin-film transistors receive ambient light through the corresponding openings 211. The size of the opening 211 in the first direction is w2, and the spacing between two adjacent openings 211 is w3. The ratio of w2 to w3 is less than or equal to 0.5. The first sub-poles of two adjacent sub-photosensitive thin-film transistors are spaced a certain distance apart and are not in contact with each other.

[0205] The present disclosure also provides a method for detecting ambient light of a display device, which is applied to the display device shown in Figures 7 to 10. The method for detecting ambient light of a display device may include steps S11 and S12.

[0206] In step S11 , a first leakage current of the second electrode 142 of the photosensitive thin film transistor 100 in the display device is detected.

[0207] Step S12: determining the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0208] In one embodiment, the method for detecting ambient light may further include: step S13 , detecting a reference leakage current of the second electrode 142 of the reference thin film transistor 200 .

[0209] Determining the ambient light color temperature and / or ambient light intensity according to the first leakage current may include determining the ambient light intensity according to the first leakage current and a reference leakage current.

[0210] Determining the ambient light intensity based on the first leakage current includes: determining the ambient light intensity from a leakage current-light intensity data table based on the corrected first leakage current, wherein the leakage current-light intensity data table includes a correspondence between leakage current and light intensity. The leakage current-light intensity data table can be collected in advance by relevant personnel through experiments. For example, during product testing, the ambient light intensity can be tested using professional equipment, and then the leakage current can be detected on the product to establish a correspondence between the leakage current and the ambient light intensity, thereby establishing a leakage current-light intensity data table. The leakage current-light intensity data table can also be provided by a professional organization.

[0211] In some exemplary embodiments, as shown in Figures 7 to 10, the first detection module can obtain a first leakage current (i.e., I1) and a reference leakage current (i.e., I2). The first detection module can calculate the difference between the first leakage current and the reference leakage current (i.e., ΔI), where ΔI = I1 - I2. The first detection module has a leakage current-light intensity data table, and the first detection module obtains light intensity data based on the value of ΔI. As a result, the first detection module can use the reference leakage current to correct the first leakage current to obtain a corrected first leakage current (i.e., ΔI). The corrected first leakage current has eliminated the impact of the process technology on the leakage current. Therefore, the ambient light intensity can be more accurately determined based on the corrected first leakage current, thereby avoiding the impact of the process technology on the detection.

[0212] Figure 13 is a schematic diagram of a first substrate according to another embodiment of the present disclosure. Figure 14 is a schematic cross-sectional view taken along the line FF in Figure 13 , and Figure 15 is a schematic cross-sectional view taken along the line HH in Figure 13 . In some exemplary embodiments, as shown in Figures 13 and 15 , a display device includes a second substrate and a first substrate, with the first substrate being located on the side of the second substrate closest to the viewer. The first substrate 400 includes a first substrate 11 and a photosensitive thin-film transistor 100. The photosensitive thin-film transistor 100 is located on the side of the first substrate 11 facing away from the display side 600 of the display device and is located in the second border region B2. The photosensitive thin-film transistor 100 includes a first active layer 131, a first electrode 141, and a second electrode 142. Both the first electrode 141 and the second electrode 142 are electrically connected to the first active layer 131. A first voltage signal is applied to the first electrode 141, allowing the first active layer 131 to receive ambient light. A first detection module is connected to the second electrode 142. The first detection module can detect a first leakage current generated by the second electrode 142 and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current. In the display device of the embodiment of the present disclosure, when the first active layer 131 is irradiated by ambient light, the second electrode 142 generates a leakage current, and the first detection module detects the first leakage current of the second electrode 142. The color temperature and / or the intensity of the ambient light can be determined based on the first leakage current. Such a display device integrates the ambient light detection function, and no longer needs to sense the ambient light through an external photosensor, which reduces the cost of the display device and is conducive to achieving a lightweight effect of the display device. After determining the color temperature and / or the intensity of the ambient light, the display device can display the color temperature and / or the intensity of the ambient light to provide the user with ambient light information. The display device can also adjust the color temperature and / or light intensity of the display screen according to the color temperature and / or the intensity of the ambient light, so that the user can better appreciate the display screen under ambient light.

[0213] In some exemplary embodiments, as shown in Figures 13 to 15 , the display device includes a reference thin-film transistor 200, which is disposed in the same layer as the photosensitive thin-film transistor 100. The reference thin-film transistor 200 includes a second active layer 132, a third electrode 143, and a fourth electrode 144. The third electrode 143 and the fourth electrode 144 of the reference thin-film transistor 200 are both connected to the second active layer 132, and the third electrode 143 of the reference thin-film transistor 200 is provided with a first voltage signal. Here, "the reference thin-film transistor 200 is disposed in the same layer as the photosensitive thin-film transistor 100" should be understood to mean that the various film layers of the reference thin-film transistor 200 are disposed in the same layer as the various film layers of the photosensitive thin-film transistor 100. The second active layer 132 of the reference thin film transistor 200 is provided in the same layer as the first active layer 131 of the photosensitive thin film transistor 100 and is formed simultaneously through the same process. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are provided in the same layer as the first electrode 141 and the second electrode 142 of the photosensitive thin film transistor 100 and are formed simultaneously through the same process. The gate of the reference thin film transistor 200 is provided in the same layer as the gate of the photosensitive thin film transistor 100 and is formed simultaneously through the same process.

[0214] In some exemplary embodiments, as shown in Figures 13 to 15 , there are three photosensitive thin-film transistors 100 . These three photosensitive thin-film transistors 100 may be a first photosensitive thin-film transistor 101, a second photosensitive thin-film transistor 102, and a third photosensitive thin-film transistor 103. The first photosensitive thin-film transistor 101, the second photosensitive thin-film transistor 102, and the third photosensitive thin-film transistor 103 are arranged sequentially along the first direction. All three photosensitive thin-film transistors 100 are located in the second border area B2. The first electrodes of the first and second photosensitive thin-film transistors 101, 102 are connected to the first voltage signal line 31a; the first electrode of the third photosensitive thin-film transistor 103 and the third electrode of the reference thin-film transistor 200 are connected to the first voltage signal line 31b. The second electrodes 142 of the three photosensitive thin-film transistors 100 may be connected to corresponding first detection signal lines, which may be connected to the second pin of the binding area B12. A first detection module may be connected to the second pin, and the first detection module detects the first leakage current via the second pin. The fourth electrode 144 of the reference thin film transistor 200 can be connected to the corresponding second detection signal line 39, which can be connected to the third pin of the binding area B12. The first detection module can be connected to the third pin and detect the reference leakage current through the third pin.

[0215] In some exemplary embodiments, as shown in Figures 13 to 15, the display device may further include a light-shielding layer (not shown in the figures), which is located in the border area and on the side of the reference thin film transistor 200 and the photosensitive thin film transistor 100 away from the first substrate 11. The orthographic projections of the reference thin film transistor 200 and the photosensitive thin film transistor 100 on the first substrate 11 are both located within the orthographic projection of the light-shielding layer (not shown in the figures). The light-shielding layer (not shown in the figures) can prevent light emitted by the light source of the display device from affecting the reference thin film transistor 200 and the photosensitive thin film transistor 100.

[0216] In some exemplary embodiments, as shown in Figures 13 to 15, the photosensitive thin-film transistor 100 includes a first gate 121, which may be located between the first active layer 131 and the first substrate 11. The orthographic projection of the first active layer 131 on the first substrate 11 is located within the orthographic projection of the first gate 121 on the first substrate 11. The material of the first gate 121 may be an opaque metal. The reference thin-film transistor 200 may include a second gate 122, which may be located between the second active layer 132 and the first substrate 11. The orthographic projection of the second active layer 132 on the first substrate 11 is located within the orthographic projection of the second gate 122 on the first substrate 11. The material of the second gate 122 may be an opaque metal. The first gate 121 and the second gate 122 may be provided on the same layer.

[0217] In some exemplary embodiments, as shown in Figures 13 to 15, an opening 211 is defined in the first gate 121. The orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the first active layer 131 on the first substrate 11. The light-sensitive thin film transistor 100 receives ambient light through the opening 211. The first substrate 400 includes a light-transmitting metal layer 222, which is located between the first substrate 11 and the first gate 121. The orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the light-transmitting metal layer 222 on the first substrate 11. The light-transmitting metal layer 222 can be made of a light-transmitting metal material, allowing ambient light to pass through and illuminate the first active layer 131. A gate insulating layer 223 is defined between the first gate 121 and the first active layer 131. The gate insulating layer 223 fills the opening 211 and covers a portion of the surface of the light-transmitting metal layer 222 away from the first substrate 11.

[0218] In some exemplary embodiments, as shown in Figures 13 to 15, the display device includes a preset color filter 221. The preset color filter 221 is located on the side of the photosensitive thin-film transistor 100 facing ambient light. The orthographic projection of the first active layer 131 of the photosensitive thin-film transistor 100 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. The number of preset color filters 221 corresponds one-to-one to the number of photosensitive thin-film transistors 100. The photosensitive thin-film transistor 100 includes a first photosensitive thin-film transistor 101, a second photosensitive thin-film transistor 102, and a third photosensitive thin-film transistor 103. The preset color filters 221 include a red color filter, a green color filter, and a blue color filter. The first photosensitive thin-film transistor 101, the second photosensitive thin-film transistor 102, and the third photosensitive thin-film transistor 103 correspond one-to-one to the red, green, and blue color filters. In some exemplary embodiments, the display device further includes a buffer layer 224. The predetermined color filter 221 is located between the first gate 121 and the first substrate 11. The buffer layer 224 is located on the side of the predetermined color filter 221 facing the first substrate 11. The buffer layer 224 has a thickness of no less than 1000 angstroms. The orthographic projection of the opening 221 on the first substrate 11 is located at the orthographic projection of the predetermined color filter 221 on the first substrate 11.

[0219] In some exemplary embodiments, as shown in Figures 13 to 15 , the first detection module is respectively connected to the second electrode 142 of the first photosensitive thin-film transistor 101, the second electrode 142 of the second photosensitive thin-film transistor 102, and the second electrode 142 of the third photosensitive thin-film transistor 103. The first detection module can detect three first leakage currents generated by the three second electrodes 142 and determine the color temperature of the ambient light based on the three first leakage currents. The ambient light can produce light of a predetermined color after passing through the color filter 221. Using three color filters, three colors of light can be generated. Each color of light illuminates the first active layer 131 of the corresponding photosensitive thin-film transistor 100, causing the second electrode 142 of the photosensitive thin-film transistor 100 to generate a corresponding first leakage current. The first detection module can determine the color temperature of the ambient light based on the three first leakage currents. The display device can pre-store a leakage current-color temperature data table that includes the correspondence between the three first leakage currents and color temperatures. After detecting the three first leakage currents, the first detection module can query the leakage current-color temperature data table to obtain the ambient light color temperature value. The leakage current-color temperature data table can be collected in advance by relevant personnel through experiments. For example, during product testing, the ambient light color temperature can be tested using professional equipment, and then three first leakage currents {a, b, c} can be detected on the product to establish a correspondence between the three first leakage currents {a, b, c} and the ambient light color temperature, and to establish a leakage current-color temperature data table. The leakage current-color temperature data table can also be provided by a professional organization. In one embodiment, the first color filter can include a red color filter; the second color filter can include a green color filter; and the third color filter can include a blue color filter. It is understandable that in the color temperature comparison table, there is a correspondence between color temperature values ​​and colors, and various colors can be obtained by combining red, green, and blue. Therefore, the color corresponding to each color temperature value can be split into a combination of red, green, and blue in different proportions. Correspondingly, each color corresponding to each color temperature value has a corresponding red first leakage current, green first leakage current, and blue first leakage current. Therefore, by setting the first color filter to include a red color filter, setting the second color filter to include a green color filter, and setting the third color filter to include a blue color filter, the color temperature of the ambient light can be detected more accurately.

[0220] In some exemplary embodiments, as shown in Figures 13 to 15, the first detection module can use the reference leakage current of the reference thin-film transistor 200 to calibrate the first leakage current of the first photosensitive thin-film transistor 101, the first leakage current of the second photosensitive thin-film transistor 102, and the first leakage current of the third photosensitive thin-film transistor 103, respectively, to obtain the corresponding corrected first leakage currents. The first detection module can determine the ambient light color temperature based on the three corrected first leakage currents. The ambient light color temperature obtained in this way can avoid the influence of the process technology on the detection, and improve the accuracy of the determined ambient light color temperature.

[0221] FIG16 is a planar structural diagram of the position of a photosensitive thin film transistor according to another embodiment of the present disclosure, and FIG17 is a planar structural diagram of the position of a photosensitive thin film transistor according to another embodiment of the present disclosure. In some exemplary embodiments, as shown in FIG16 and FIG17 , the photosensitive thin film transistor 100 may include a plurality of sub-photosensitive thin film transistors 110, and the plurality of sub-photosensitive thin film transistors 110 are arranged in sequence along the first direction. The sub-photosensitive thin film transistors 110 may include a first sub-pole 1410 and a second sub-pole 1420, the first pole 141 includes a plurality of interconnected first sub-poles 1410, and the second pole 142 may include a plurality of interconnected second sub-poles 1420. The first active layer 131 extends along the first direction, and the orthographic projections of the first sub-pole 1410 and the second sub-pole 1420 on the first substrate 11 are both located within the orthographic projection of the first active layer 131 on the first substrate 11. The orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the first active layer 131 on the first substrate 11, the orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11, the orthographic projection of the preset color filter 221 on the first substrate 11 is located within the orthographic projection of the first gate 121 on the first substrate 11, and the orthographic projection of the first active layer 131 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. The first sub-poles of two adjacent sub-photosensitive thin-film transistors are adjacent to each other, and the opening 211 extends along the first direction. Here, the first sub-poles of two adjacent sub-photosensitive thin-film transistors are adjacent to each other, which can be understood as the orthographic projections of the first sub-poles of the two adjacent sub-photosensitive thin-film transistors on the first substrate 11 having an overlapping area.

[0222] In some exemplary embodiments, as shown in Figures 16 and 17, the distance between the orthographic projection boundary of the opening 211 on the first substrate 11 and the orthographic projection boundary of the first active layer 131 on the first substrate 11 is w1, and w1 is greater than or equal to 10 μm. In some exemplary embodiments, the number of openings 211 is the same as the number of sub-photosensitive thin-film transistors. The multiple openings 211 are spaced apart along the first direction, and the openings 211 correspond one-to-one with the sub-photosensitive thin-film transistors. The sub-photosensitive thin-film transistors receive ambient light through the corresponding openings 211. The size of the openings 211 in the first direction is w2, and the spacing between two adjacent openings 211 is w3. The ratio of w2 to w3 is less than or equal to 0.5. The first sub-electrodes of adjacent sub-photosensitive thin-film transistors are separated by a certain distance and do not abut each other. The distance w4 between the orthographic projection boundary of the first active layer 131 on the first substrate 11 and the orthographic projection boundary of the preset color filter 221 on the first substrate 11 is greater than or equal to 5 μm. This arrangement can ensure that all ambient light entering the opening 211 passes through the color filter 221 of the preset color, thereby preventing light of non-preset colors from entering the opening and affecting detection accuracy.

[0223] The present disclosure also provides a method for detecting ambient light of a display device, which is applied to the display device shown in Figures 13 to 15. The method for detecting ambient light of a display device may include steps S11 and S12.

[0224] In step S11 , a first leakage current of the second electrode 142 of the photosensitive thin film transistor 100 in the display device is detected.

[0225] Step S12: determining the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0226] In one embodiment, the method for detecting ambient light may further include: step S13 , detecting a reference leakage current of the second electrode 142 of the reference thin film transistor 200 .

[0227] Determining the ambient light color temperature and / or ambient light intensity according to the first leakage current may include: determining the ambient light color temperature and / or ambient light intensity according to the first leakage current and a reference leakage current.

[0228] In one embodiment, the photosensitive thin film transistor 100 includes a first photosensitive thin film transistor, a second photosensitive thin film transistor, and a third photosensitive thin film transistor.

[0229] Detecting the first leakage current of the second electrode 142 of the photosensitive thin film transistor 100 in the display device may include respectively detecting three first leakage currents of the second electrode of the first photosensitive thin film transistor, the second electrode of the second photosensitive thin film transistor, and the second electrode of the third photosensitive thin film transistor.

[0230] Determining the ambient light color temperature according to the first leakage current includes: determining the ambient light color temperature from a leakage current-color temperature data table according to the three first leakage currents, wherein the leakage current-color temperature data table includes correspondences between the three first leakage currents and the color temperatures.

[0231] Figure 18 is a schematic planar structural diagram illustrating the location of a photosensitive thin-film transistor according to another embodiment of the present disclosure. Figure 19 is a schematic planar structural diagram illustrating the location of a photosensitive thin-film transistor according to another embodiment of the present disclosure. Figure 20 is a schematic cross-sectional diagram taken along the GG axis in Figure 18. Figure 21 is a schematic diagram illustrating a reference thin-film transistor according to an embodiment of the present disclosure. In some exemplary embodiments, as shown in Figures 18 and 21, a display device includes a second substrate and a first substrate, with the first substrate being located on the side of the second substrate closest to the viewer. The first substrate 400 includes a first substrate 11 and a photosensitive thin-film transistor. The photosensitive thin-film transistor is located on the side of the first substrate 11 away from the display side 600. The photosensitive thin-film transistor 100 is located in the second border region. The photosensitive thin-film transistor includes a first active layer 131, a first electrode 141, and a second electrode 142. The first electrode 141 and the second electrode 142 are both electrically connected to the first active layer 131. A first voltage signal is applied to the first electrode 141, allowing the first active layer 131 to receive ambient light. The first detection module is connected to the second electrode 142, and the first detection module can detect the first leakage current generated by the second electrode 142, and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current. The display device includes a reference thin film transistor, which is arranged in the same layer as the photosensitive thin film transistor. The reference thin film transistor 200 includes a second active layer 132, a third electrode 143 and a fourth electrode 144. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are both connected to the second active layer 132, and the third electrode 143 of the reference thin film transistor 200 is provided with a first voltage signal. Here, the reference thin film transistor 200 is arranged in the same layer as the photosensitive thin film transistor 100, which should be understood as the various film layers of the reference thin film transistor 200 are arranged in the same layer as the various film layers of the photosensitive thin film transistor 100. The second active layer 132 of the reference thin film transistor 200 is provided in the same layer as the first active layer 131 of the photosensitive thin film transistor 100 and is formed simultaneously through the same process. The third electrode 143 and the fourth electrode 144 of the reference thin film transistor 200 are provided in the same layer as the first electrode 141 and the second electrode 142 of the photosensitive thin film transistor 100 and are formed simultaneously through the same process. The gate of the reference thin film transistor 200 is provided in the same layer as the gate of the photosensitive thin film transistor 100 and is formed simultaneously through the same process.

[0232] In some exemplary embodiments, as shown in Figures 18 to 21, a photosensitive thin-film transistor 100 includes a first gate 121, which is located on a side of a first active layer 131 away from a first substrate 11. The orthographic projection of the first active layer 131 on the first substrate 11 is located within the orthographic projection of the first gate 121 on the first substrate 11. A reference thin-film transistor 200 may include a second gate 122, which may be located between the second active layer 132 and the first substrate 11. The orthographic projection of the second active layer 132 on the first substrate 11 is located within the orthographic projection of the second gate 122 on the first substrate 11. The first gate 121 and the second gate 122 may be made of an opaque metal, and the first and second gates 121 and 122 may be disposed on the same layer. The first and second gates 121 and 122 can block the backlight source of the display device from irradiating the first and second active layers 131 and 132. A gate insulating layer 223 is disposed between the first gate 121 and the first active layer 131 , and a gate insulating layer 223 is disposed between the second gate 122 and the second active layer 132 .

[0233] In some exemplary embodiments, as shown in Figures 18 to 21, the display device includes a light-shielding layer 225, which is located between the first active layer 131 and the first substrate 11. An opening 211 is provided on the light-shielding layer 225, and the orthographic projection of the opening 211 on the first substrate 11 is located within the orthographic projection of the first active layer 131 on the first substrate 11. The photosensitive thin film transistor 100 receives ambient light through the opening 211.

[0234] In some exemplary embodiments, as shown in Figures 18 to 21 , the display device includes a preset color filter 221. The preset color filter 221 is located on the side of the photosensitive thin-film transistor 100 facing ambient light. The orthographic projection of the first active layer 131 of the photosensitive thin-film transistor 100 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. The number of preset color filters 221 corresponds to the number of photosensitive thin-film transistors 100. In some exemplary embodiments, the display device further includes a buffer layer 224. The preset color filter 221 is located between the first gate 121 and the first substrate 11. The buffer layer 224 is located on the side of the preset color filter 221 facing the first substrate 11, and the thickness of the buffer layer 224 is not less than 1000 angstroms. The orthographic projection of the opening 221 on the first substrate 11 is located within the orthographic projection of the preset color filter 221 on the first substrate 11. The orthographic projection of the first active layer 131 on the first substrate 11 is located within the orthographic projection of the light-shielding layer 225 on the first substrate 11, the orthographic projection of the light-shielding layer 225 on the first substrate 11 is located within the orthographic projection of the color filter 221 on the first substrate 11, and the orthographic projection of the color filter 221 on the first substrate 11 is located within the orthographic projection of the first gate 121 on the first substrate 11.

[0235] In some exemplary embodiments, a display device includes:

[0236] A first substrate comprises a first substrate and a photosensitive thin film transistor, wherein the photosensitive thin film transistor is provided on the first substrate, and the photosensitive thin film transistor is provided with a first voltage signal and receives ambient light;

[0237] The first substrate includes a display area and a frame area outside the display area, and the photosensitive thin film transistor is located in the frame area;

[0238] The first detection module is configured to detect a first leakage current generated by the photosensitive thin film transistor and determine the ambient light color temperature and / or ambient light intensity according to the first leakage current.

[0239] In some exemplary embodiments, a method for detecting ambient light of a display device is provided, wherein the method is applied to the above-mentioned display device, and the method includes:

[0240] detecting a first leakage current of a second electrode of a photosensitive thin film transistor in the display device;

[0241] The ambient light color temperature and / or the ambient light intensity are determined according to the first leakage current.

[0242] In an exemplary embodiment, the gate, source, drain, and metal wiring can be made of metal materials, such as any one or more of silver (Ag), copper (Cu), aluminum (Al), titanium (Ti), and molybdenum (Mo), or alloy materials of the above metals, such as aluminum-neodymium alloy (AlNd) or molybdenum-niobium alloy (MoNb), and can be a single-layer structure or a multi-layer composite structure, such as Ti / Al / Ti.

[0243] The display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or the like.

[0244] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0245] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of such features. Throughout the present disclosure, "plurality" means two or more, unless otherwise specifically defined.

[0246] In this disclosure, unless otherwise expressly specified or limited, terms such as "mounted," "connected," "connect," and "fixed" should be understood broadly. For example, they may refer to fixed connections, detachable connections, or integration; mechanical connections, electrical connections, or communication; direct connections or indirect connections through an intermediate medium; and internal connections between two components or interactions between two components. Those skilled in the art will understand the specific meanings of these terms in this disclosure based on specific circumstances.

[0247] In the present disclosure, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0248] The disclosure above provides many different embodiments or examples for implementing different structures of the present disclosure. In order to simplify the present disclosure, the components and settings of specific examples are described above. Of course, these are merely examples and are not intended to limit the present disclosure. In addition, the present disclosure may repeat reference numbers and / or reference letters in different examples. Such repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or settings discussed.

[0249] The above are only specific embodiments of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any person skilled in the art can easily conceive of various modifications or substitutions within the technical scope disclosed in this disclosure, and such modifications or substitutions should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A display device, wherein: include: A first substrate, comprising a first substrate and a photosensitive thin film transistor, wherein the photosensitive thin film transistor is disposed on the first substrate, and the photosensitive thin film transistor is provided with a first voltage signal and receives ambient light radiation; The first substrate includes a display area and a frame area outside the display area, and the photosensitive thin film transistor is located in the frame area; The first detection module is configured to detect a first leakage current generated by the photosensitive thin film transistor and determine the ambient light color temperature and / or ambient light intensity according to the first leakage current.

2. The display device according to claim 1, wherein: The photosensitive thin film transistor comprises a first active layer, a first electrode and a second electrode, the first electrode and the second electrode are both electrically connected to the first active layer, the first electrode is provided with a first voltage signal, and the first active layer is configured to receive ambient light; The first detection module is connected to the second electrode, and the first detection module is configured to detect a first leakage current generated by the second electrode.

3. The display device according to claim 2, wherein: The photosensitive thin film transistor is located on a side of the first substrate close to the display side of the display device.

4. The display device according to claim 2, wherein: It also includes a second substrate, the first substrate is arranged on a side of the second substrate close to the display side of the display device, and the photosensitive thin film transistor is located on a side of the first substrate away from the display side of the display device.

5. The display device according to claim 2, wherein: It also includes a reference thin film transistor, which is disposed in the same layer as the photosensitive thin film transistor; A first voltage signal is provided to the third electrode of the reference thin film transistor, the first detection module is connected to the fourth electrode of the reference thin film transistor, the first detection module is configured to detect a reference leakage current of the fourth electrode of the reference thin film transistor, and determine the ambient light color temperature and / or ambient light intensity based on the first leakage current and the reference leakage current.

6. The display device according to claim 2, wherein: It also includes a color filter layer, the color filter layer includes a preset color filter, and the preset color filter is located on the side of the photosensitive thin film transistor facing the ambient light; The orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the preset color filter on the first substrate; The photosensitive thin film transistor includes a first photosensitive thin film transistor, a second photosensitive thin film transistor and a third photosensitive thin film transistor, and the preset color filter includes a red color filter, a green color filter and a blue color filter; The second electrode of the first photosensitive thin film transistor, the second electrode of the second photosensitive thin film transistor and the second electrode of the third photosensitive thin film transistor are all connected to the first detection module, and the first detection module is configured to detect three first leakage currents generated by the three second electrodes and determine the color temperature of the ambient light based on the three first leakage currents.

7. The display device according to claim 2, wherein: It also includes a color filter layer, the color filter layer includes a preset color filter, and the preset color filter is located on the side of the photosensitive thin film transistor facing the ambient light; The orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the preset color filter on the first substrate, and the preset color filter includes a green color filter; The first detection module is configured to detect a first leakage current of the second electrode of the photosensitive thin film transistor, and determine the ambient light intensity according to the first leakage current of the second electrode of the photosensitive thin film transistor.

8. The display device according to claim 1, wherein: The frame area includes a first frame area and a second frame area located on opposite sides of the display area. The first frame area includes a fan-shaped routing area and a binding area. The fan-shaped routing area is located between the display area and the binding area. The photosensitive thin film transistor is located in the second frame area.

9. The display device according to claim 8, wherein: The first substrate comprises a first row of binding pins and a second row of binding pins located in the binding area, the first row of binding pins and the second row of binding pins are arranged along a direction from the fan-shaped routing area toward the binding area, and the first row of binding pins is divided into a middle area and end areas located at both ends of the middle area; The binding pins in the middle area are connected to the first metal traces in the fan-shaped trace area; The display device further includes a second metal routing line arranged in the fan-shaped routing area and the binding area; A third metal routing is arranged between the first row of binding pins and the second row of binding pins, a binding pin in at least one end area is connected to one end of the third metal routing, the other end of the third metal routing extends in a direction away from the middle area and is connected to the second metal routing through a via, the first metal routing and the second metal routing are located in the same layer, and the third metal routing and the second metal routing are located in different layers.

10. The display device according to claim 9, wherein: The first substrate further includes a functional unit, the functional unit is located in the second border area, a plurality of the photosensitive thin film transistors are arranged in sequence along the extension direction of the second border area, and the functional unit is located between the photosensitive thin film transistor and the display area; The display device also includes an ink layer located in the second border area, the second border area includes an ink avoidance area, and the orthographic projection of the first active layer of the photosensitive thin film transistor on the first substrate is located within the orthographic projection of the ink avoidance area on the first substrate.

11. The display device according to claim 8, wherein: The distance between the center of the photosensitive thin film transistor and the boundary of the display area close to the second frame area is 0.08 mm to 0.12 mm.

12. The display device according to claim 11, wherein: The first substrate further includes a functional unit, which includes a touch control unit, a data control unit and an anti-static unit, and the anti-static unit is located on a side of the fan-shaped wiring area close to the display area; The first substrate includes a first row of binding pins and a second row of binding pins located in the binding area, the first row of binding pins and the second row of binding pins are arranged in a direction from the fan-shaped routing area toward the binding area, and the touch control unit and the data control unit are located between the first row of binding pins and the second row of binding pins.

13. The display device according to claim 3, wherein: It also includes a light shielding layer, the light shielding layer is located on a side of the photosensitive thin film transistor close to the display side of the display device, the first active layer is located between the light shielding layer and the first substrate, and the light shielding layer is provided with an opening; The orthographic projection of the opening on the first substrate is located within the orthographic projection of the first active layer on the first substrate, and the photosensitive thin film transistor receives ambient light through the opening.

14. The display device according to claim 13, wherein: It also includes a preset color filter, which is located on a side of the photosensitive thin film transistor close to the display side of the display device, and the preset color filter is located on a side of the light shielding layer close to the photosensitive thin film transistor; The orthographic projection of the opening on the first substrate is located within the orthographic projection of the preset color filter on the first substrate.

15. The display device according to claim 4, wherein: The photosensitive thin film transistor further includes a first gate, and the first gate is located between the first active layer and the first substrate; The orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the first gate on the first substrate; The first gate is provided with an opening, the orthographic projection of the opening on the first substrate is located within the orthographic projection of the first active layer on the first substrate, and the photosensitive thin film transistor receives ambient light through the opening.

16. The display device according to claim 15, wherein: Also includes a light-transmitting metal layer, wherein the light-transmitting metal layer is located between the first substrate and the first gate; The orthographic projection of the opening on the first substrate is located within the orthographic projection of the light-transmitting metal layer on the first substrate.

17. The display device according to claim 15, wherein: It also includes a light shielding layer, which is located on a side of the photosensitive thin film transistor away from the first substrate.

18. The display device according to claim 15, wherein: It also includes a preset color filter and a buffer layer, wherein the preset color filter is located between the first gate and the first substrate, and the buffer layer is located on a side of the preset color filter facing the first substrate; The orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the preset color filter on the first substrate.

19. The display device according to claim 4, wherein: It also includes a light shielding layer, a preset color filter and a buffer layer, wherein the light shielding layer is located on a side of the photosensitive thin film transistor close to the first substrate, the preset color filter is located between the light shielding layer and the first substrate, and the buffer layer is located on a side of the preset color filter close to the first substrate; The photosensitive thin film transistor further comprises a first gate, and the first gate is located on a side of the first active layer away from the first substrate; The light-shielding layer is provided with an opening, the orthographic projection of the opening on the first substrate is located within the orthographic projection of the first active layer on the first substrate, the orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the preset color film on the first substrate, and the photosensitive thin film transistor receives ambient light through the opening.

20. The display device according to claim 14, 18 or 19, wherein: The orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the preset color filter on the first substrate.

21. The display device according to claim 20, wherein: A distance between an orthographic projection boundary of the first active layer on the first substrate and an orthographic projection boundary of the preset color filter on the first substrate is greater than or equal to 5 μm.

22. The display device according to claim 20, wherein: A distance between an orthographic projection boundary of the opening on the first substrate and an orthographic projection boundary of the first active layer on the first substrate is greater than or equal to 10 μm.

23. The display device according to claim 13, 15 or 19, wherein: The photosensitive thin film transistor includes a plurality of sub-photosensitive thin film transistors, and the plurality of sub-photosensitive thin film transistors are arranged in sequence along a first direction; The sub-photosensitive thin film transistor includes a first sub-pole and a second sub-pole, the first pole includes a plurality of first sub-poles connected to each other, and the second pole includes a plurality of second sub-poles connected to each other; The first active layer extends along a first direction, and the orthographic projections of the first sub-pole and the second sub-pole on the first substrate are both located within the orthographic projection of the first active layer on the first substrate.

24. The display device according to claim 23, wherein: The number of the openings is the same as the number of the sub-photosensitive thin film transistors, the plurality of openings are arranged at intervals along the first direction, the openings correspond to the sub-photosensitive thin film transistors one by one, and the sub-photosensitive thin film transistors receive ambient light through the corresponding openings; A ratio between a size of the opening in the first direction and a distance between two adjacent openings is less than or equal to 0.

5.

25. The display device according to claim 23, wherein: The first sub-poles of two adjacent sub-photosensitive thin film transistors are in contact with each other, the opening extends along the first direction, and the plurality of sub-photosensitive thin film transistors receive ambient light through the opening.

26. The display device according to claim 1, wherein: The first substrate further includes a second thin film transistor located in the display area, and the photosensitive thin film transistor is arranged in the same layer as the second thin film transistor.

27. The display device according to claim 5, wherein: It also includes a shading layer, which is located on the side of the reference thin film transistor facing the display side of the display device, and the orthographic projection of the second active layer of the reference thin film transistor on the first substrate is located within the orthographic projection of the shading layer on the first substrate.

28. The display device according to claim 5, wherein: The photosensitive thin film transistor further includes a first gate, the first gate is located between the first active layer and the first substrate, or is located on a side of the first active layer away from the first substrate, and a gate insulating layer is provided between the first gate and the first active layer; The orthographic projection of the first active layer on the first substrate is located within the orthographic projection of the first gate on the first substrate, and a turn-off signal is applied to the first gate so that the first electrode and the second electrode of the photosensitive thin film transistor are disconnected when there is no ambient light irradiation; The reference thin film transistor further includes a second gate and a second active layer, the second gate is located between the second active layer and the first substrate, or is located on a side of the second active layer away from the first substrate, and a gate insulating layer is provided between the second gate and the second active layer; The orthographic projection of the second active layer on the first substrate is located within the orthographic projection of the second gate on the first substrate, and a turn-off signal is applied to the second gate to disconnect the third electrode and the fourth electrode of the reference thin film transistor when there is no ambient light.

29. A method for detecting ambient light of a display device, wherein: Applied to the display device according to any one of claims 1 to 28, the method comprising: Detecting a first leakage current of a second electrode of a photosensitive thin film transistor in the display device; The color temperature of the ambient light and / or the intensity of the ambient light are determined according to the first leakage current.

30. The method of claim 29, further comprising: detecting a reference leakage current of a second electrode of a reference thin film transistor; Determining the color temperature and / or intensity of ambient light according to the first leakage current includes: determining the color temperature and / or intensity of ambient light according to the first leakage current and the reference leakage current.

31. The method of claim 29, wherein: The photosensitive thin film transistor comprises a first photosensitive thin film transistor, a second photosensitive thin film transistor and a third photosensitive thin film transistor; Detecting a first leakage current of a second electrode of a photosensitive thin film transistor in the display device, comprising: respectively detecting three first leakage currents of a second electrode of a first photosensitive thin film transistor, a second electrode of the second photosensitive thin film transistor, and a second electrode of a third photosensitive thin film transistor; Determining the ambient light color temperature according to the first leakage current includes: determining the ambient light color temperature from a leakage current-color temperature data table according to the three first leakage currents, wherein the leakage current-color temperature data table includes correspondences between the three first leakage currents and the color temperatures.

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