Film transfer method, processing device and terminal equipment

Abstract

The invention provides a film transfer method, a processing device and terminal equipment, relates to the technical field of two-dimensional materials, and aims to solve the problems that when a graphene film is transferred in the prior art, the graphene film is easily damaged, and the integrity of the graphene film is damaged. The thin film transfer method applies a processing device comprising a groove body, a bearing part and a target substrate; the thin film transfer method comprises the following steps: forming a protective film on the surface of a thin film growing on a substrate to obtain a thin film structure; completely removing the substrate by using an etching solution to obtain an etched film structure; the etching liquid is discharged, so that the etched thin film structure is attached to the target substrate; processing the target substrate attached with the etched thin film structure so as to enable the thin film to be adhered to the target substrate; placing the target substrate adhered with the etched thin film structure on a bearing piece; removing the protective film by using a removal liquid to expose the thin film; and discharging the removal liquid to expose the thin film and the target substrate which are adhered together.

Description

Technical Field

[0001] The present invention relates to the technical field of two-dimensional materials, and in particular to a film transfer method, a processing device and a terminal device. Background Art

[0002] Graphene is a single-atom layer planar film with a hexagonal lattice composed of carbon atoms according to hybrid orbitals. As a new type of semiconductor material, it has many excellent properties. Due to its special nanostructure and electrical and thermodynamic properties, such as high mechanical strength, high thermal conductivity, high specific surface area and high electron mobility, etc., it shows great application potential in the fields of micro-nano electronic devices, photoelectrocatalysis, biosensing, fuel cells, etc.

[0003] At present, the main method for large-scale industrial preparation of single-layer graphene film is chemical vapor deposition. Its principle is to use carbon-containing compounds such as methane as carbon sources, and grow graphene by high-temperature decomposition of the carbon sources on the surface of the catalytic substrate. The key to restricting the large-scale application of graphene by chemical vapor deposition is the high-performance transfer method of graphene. The conventional transfer techniques of graphene are divided into copper substrate wet etching transfer technique and electrochemical stripping technique.

[0004] For example, in the prior art, generally, the graphene film grown on the substrate is placed in a water tank containing an etching solution, and the substrate is etched away by the etching solution. At this time, the graphene film floats on the etching solution. Then, a silicon wafer is used to pick up the floating graphene film.

[0005] However, during the process of picking up the graphene film by the silicon wafer, the graphene film is subjected to a large force from the silicon wafer, and at this time, the graphene film is easily damaged, thus destroying the integrity of the graphene film. Summary of the Invention

[0006] The purpose of the present invention is to provide a film transfer method and a terminal device, which are used to reduce the probability of damage to the graphene film during the transfer process of the graphene film, so as to improve the integrity of the graphene film.

[0007] In order to achieve the above purpose, the present invention provides the following technical solutions:

[0008] In a first aspect, the present invention provides a film transfer method. The film transfer method is applied to a processing device including a tank body, a carrier, and a target substrate; the tank body has an open end and an accommodation space; the carrier is disposed in the tank body; along the height direction of the tank body, the carrier and the bottom wall of the tank body are spaced apart; along the thickness direction of the carrier, through holes penetrating the carrier are formed on the carrier; the thickness direction of the carrier is consistent with the height direction of the tank body; the target substrate is disposed on the carrier; the target substrate has a first bearing surface, and the first bearing surface is parallel to the horizontal plane; at least part of the through holes are located outside the target substrate. The film transfer method includes:

[0009] Form a protective film on the surface of the film grown on the substrate to obtain a film structure;

[0010] Inject an etching solution into the tank body, and the liquid level of the etching solution is higher than the target substrate;

[0011] Place the film structure in the tank body, and the substrate included in the film structure is located in the etching solution;

[0012] Completely remove the substrate with the etching solution to obtain an etched film structure;

[0013] Drain the etching solution so that the etched film structure adheres to the first bearing surface of the target substrate;

[0014] Process the target substrate with the etched film structure attached thereto so that the film included in the etched film structure adheres to the first bearing surface of the target substrate;

[0015] Place the target substrate with the etched film structure adhered thereto on the carrier, and the target substrate abuts against the carrier;

[0016] Inject a removal solution into the tank body having the carrier, the etched film structure adhered together, and the target substrate;

[0017] Remove the protective film with the removal solution to expose the film;

[0018] Drain the removal solution to expose the film and the target substrate adhered together.

[0019] In the film transfer method provided by the present invention, after the substrate is completely removed by the etching solution, as the etching solution is continuously discharged, the liquid level in the tank gradually drops. At this time, the etched film structure slowly falls onto the target substrate. Under the protection of buoyancy, the impact force on the film included in the etched film structure from the target substrate is reduced. Therefore, the probability of film breakage can be reduced and the integrity of the film can be improved. Further, the target substrate attached with the etched film structure is processed so that the etched film structure adheres to the first bearing surface of the target substrate. At this time, the bonding force between the film and the target substrate is increased, and the film is prevented from easily moving relative to the first bearing surface of the target substrate. Still further, the protective film is removed by the removing solution to expose the film. At this time, the protective film above the film is removed and the film is not damaged by the removing solution. After the protective film included in the etched film structure is removed by the removing solution, as the removing solution is continuously discharged, the liquid level in the tank gradually drops, and the film and the target substrate adhered together are exposed, facilitating removal. Thus, the process of transferring the film from the substrate on which it grows to the target substrate is completed. Combining the foregoing description, in the process of transferring the film from the substrate on which it grows to the target substrate, the impact force on the film is smaller than that on the graphene film when directly lifting the graphene film by a silicon wafer in the prior art. Therefore, the probability of film breakage can be reduced and the integrity of the film can be improved.

[0020] In one implementation, before processing the target substrate attached with the etched film structure so that the film included in the etched film structure adheres to the first bearing surface of the target substrate, the film transfer method further includes:

[0021] Placing the target substrate and the etched film structure attached together in a tank having a cleaning solution, and the target substrate abuts against the carrier;

[0022] Rinsing the etched film structure separated from the target substrate with the cleaning solution to obtain a cleaned film structure;

[0023] Discharging the cleaning solution so that the film included in the cleaned film structure adheres to the first bearing surface of the target substrate;

[0024] Processing the target substrate attached with the cleaned film structure so that the film included in the cleaned film structure adheres to the first bearing surface of the target substrate.

[0025] In one implementation, processing the target substrate attached with the cleaned film structure so that the film included in the cleaned film structure adheres to the first bearing surface of the target substrate includes:

[0026] Take out the washed film structure and the target substrate attached together from the tank;

[0027] Perform a first heating and drying treatment on the target substrate with the washed film structure attached thereto, so that the film included in the washed film structure adheres to the first bearing surface of the target substrate.

[0028] In one implementation, after discharging the removal liquid to expose the film and the target substrate attached together, the film transfer method further includes:

[0029] Take out the film and the target substrate attached together from the tank;

[0030] Perform a second heating and drying treatment on the target substrate with the film adhered thereto to improve the adhesion between the film and the target substrate.

[0031] In one implementation, forming a protective film on the surface of the film grown on the substrate includes:

[0032] Spin-coat a protective film on the surface of the film grown on the substrate; along the thickness direction of the film structure, the projection of the protective film on the substrate overlaps with the projection of the film on the substrate.

[0033] In one implementation, the substrate includes a metal substrate; the film includes a graphene film, a molybdenum disulfide film or a tungsten disulfide film; the protective film includes an organic protective film; the etching solution includes an ammonium persulfate solution; the removal liquid includes an acetone solution.

[0034] In a second aspect, the present invention further provides a processing device for implementing the film transfer method described in the first aspect. The above-mentioned processing device includes: a tank, a carrier and a target substrate. The tank has an open end and an accommodation space; the carrier is disposed in the tank; along the height direction of the tank, the carrier and the bottom wall of the tank are spaced apart; along the thickness direction of the carrier, through holes penetrating the carrier are formed on the carrier; the thickness direction of the carrier is the same as the height direction of the tank; the target substrate is disposed on the carrier; the target substrate has a first bearing surface, and the first bearing surface is parallel to the horizontal plane; at least part of the through holes are located outside the target substrate. The processing device provided by the present invention has a simple structure and is convenient for manufacturing and use.

[0035] In one implementation, the processing device further includes:

[0036] A liquid inlet pipe, the liquid inlet pipe is communicated with the accommodation space through a liquid inlet valve;

[0037] A liquid discharge pipe, the liquid discharge pipe is communicated with the accommodation space through a liquid discharge valve;

[0038] Along the height direction of the tank body, the liquid inlet pipe is located between the carrier and the liquid discharge pipe.

[0039] In one implementation, the material of the tank body includes one or more of polytetrafluoroethylene, ceramics, polycarbonate, glass or quartz; the material of the liquid inlet pipe includes one or more of polytetrafluoroethylene, ceramics, polycarbonate, glass or quartz; the material of the liquid discharge pipe includes one or more of polytetrafluoroethylene, ceramics, polycarbonate, glass or quartz.

[0040] In a third aspect, the present invention further provides a terminal device. The terminal device includes: a processor and a communication interface, the communication interface is coupled to the processor, and the processor is configured to run a computer program or instruction to implement the film transfer method as described in the above technical solution.

[0041] For the beneficial effects of the third aspect and its various implementations in the present invention, reference may be made to the beneficial effects in the first aspect and its various implementations, which will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The illustrative embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation to the present invention. In the drawings:

[0043] Figure 1 It is a schematic structural diagram of the processing device in the embodiment of the present invention;

[0044] Figure 2 It is the process of the film transfer method in the embodiment of the present invention Figure 1 ;

[0045] Figure 3 It is the process of the film transfer method in the embodiment of the present invention Figure 2 ;

[0046] Figure 4 It is the process of the film transfer method in the embodiment of the present invention Figure 3 ;

[0047] Figure 5 It is the process of the film transfer method in the embodiment of the present invention Figure 4 ;

[0048] Figure 6 It is the process of the film transfer method in the embodiment of the present invention Figure 5 ;

[0049] Figure 7 It is the process of the film transfer method in the embodiment of the present invention Figure 6 ;

[0050] Figure 8 The process of the film transfer method in the embodiment of the present invention Figure 7 ;

[0051] Figure 9 The optical microscope photograph of the graphene film obtained after transfer in the embodiment of the present invention;

[0052] Figure 10 The schematic hardware structure diagram of the terminal device provided by the embodiment of the present invention.

[0053] Reference numerals:

[0054] 1 - processing device, 10 - tank body, 11 - carrier, 12 - target substrate, 13 - liquid inlet pipe, 14 - liquid discharge pipe; 2 - substrate, 3 - film, 4 - protective film, 50 - film structure, 51 - etching solution, 52 - cleaning solution, 53 - removal solution; 61 - first processor, 62 - communication interface, 63 - communication line, 64 - first memory, 65 - second processor. Detailed implementation manners

[0055] For the convenience of clearly describing the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, terms such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and do not limit their sequence. Those skilled in the art can understand that terms such as "first" and "second" do not limit the quantity and execution order, and "first" and "second" do not necessarily mean different.

[0056] It should be noted that in the present invention, words such as "exemplary" or "for example" are used to represent examples, illustrations or explanations. Any embodiment or design solution described as "exemplary" or "for example" in the present invention should not be construed as being more preferred or having more advantages than other embodiments or design solutions. Exactly, using words such as "exemplary" or "for example" is intended to present relevant concepts in a specific manner.

[0057] In the present invention, "at least one" means one or more, and "a plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist simultaneously, and B exists alone, where A and B can be singular or plural. The character " / " generally represents an "or" relationship between the associated objects before and after. "At least one of the following" or similar expressions refer to any combination of these items, including any combination of single item or plural items. For example, at least one of a, b, or c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b, and c, where a, b, and c can be single or multiple.

[0058] To solve the above technical problems, an embodiment of the present invention provides a processing device. Refer to Figure 1 , the processing device 1 includes: a tank body 10, a carrier 11, and a target substrate 12. The tank body 10 has an open end and an accommodation space; the carrier 11 is disposed inside the tank body 10; along the height direction of the tank body 10, the carrier 11 and the bottom wall of the tank body 10 are spaced apart; along the thickness direction of the carrier 11, through holes penetrating the carrier 11 are formed on the carrier 11; the thickness direction of the carrier 11 is consistent with the height direction of the tank body 10; the target substrate 12 is disposed on the carrier 11; the target substrate 12 has a first bearing surface, and the first bearing surface is parallel to the horizontal plane; at least part of the through holes ( Figure 1 not shown in the figure) are located outside the target substrate 12. The processing device 1 provided by the embodiment of the present invention has a simple structure and is convenient for manufacturing and use.

[0059] The shape, volume, material, etc. of the above-mentioned tank body are not specifically limited herein, as long as it can meet the actual needs. As a possible implementation manner, the cross-sectional shape of the tank body is circular, elliptical, square, etc. In some embodiments, the cross-sectional shape of the tank body is circular. The bottom wall of the tank body is parallel to the horizontal plane so that the tank body can be stably placed on the workbench. The volume of the tank body is greater than or equal to 10 mL and less than or equal to 1000 mL; for example, the volume of the tank body can be 10 mL, 30 mL, 50 mL, 100 mL, 150 mL, 200 mL, 250 mL, 300 mL, 350 mL, 400 mL, 450 mL, 500 mL, 550 mL, 600 mL, 650 mL, 700 mL, 750 mL, 800 mL, 850 mL, 900 mL, 950 mL, or 1000 mL, etc. In some embodiments, the volume of the tank body is 200 mL. The material of the tank body includes one or more of polytetrafluoroethylene, ceramic, polycarbonate, glass, or quartz.

[0060] The shape, material, etc. of the above-mentioned carrier are not specifically limited herein, as long as they can meet the actual needs. The above-mentioned target substrate is used to receive the transferred thin film, and its shape and material are selected according to the device to be fabricated later, which are not specifically limited herein. For example, the target substrate can be a silicon substrate or the like. As a possible implementation, along the thickness direction of the carrier, the cross-sectional view of the above-mentioned carrier can be a rectangle, a trapezoid, etc. In the embodiment of the present invention, the above-mentioned carrier has a second bearing surface, and the second bearing surface is parallel to the first bearing surface of the target substrate. At this time, the carrier can provide a flat surface for the target substrate to ensure that the target substrate can be stably placed on the carrier. Further, since the first bearing surface of the target substrate is parallel to the horizontal plane, at this time, the target substrate can provide a flat surface for the thin film, so that the thin film or the structure including the thin film can fall onto the preset position of the target substrate. Combining the foregoing description, when the bottom wall of the tank body is parallel to the horizontal plane, the second bearing surface is parallel to the bottom wall of the tank body. Further, the size of the carrier is basically the same as the size of the bottom wall of the tank body.

[0061] Along the height direction of the tank body, the carrier and the bottom wall of the tank body are spaced apart. At this time, there is a space between the carrier and the bottom wall of the tank body for accommodating the storage liquid. Exemplarily, the distance between the carrier and the bottom wall of the tank body is greater than or equal to 2 cm and less than or equal to 5 cm. For example, the distance can be 2 cm, 2.5 cm, 3 cm, 3.5 cm, 4 cm, 4.5 cm, or 5 cm, etc.

[0062] Along the thickness direction of the carrier, through holes penetrating the carrier are provided on the carrier, and at least part of the through holes are located outside the periphery of the target substrate. Exemplarily, a plurality of through holes penetrating the carrier are provided on the carrier, and the above-mentioned through holes are all located outside the periphery of the target substrate. At this time, it is convenient for the liquid to gradually rise from the bottom of the tank body above the target substrate or for the liquid to reach the bottom of the tank body from top to bottom, providing buoyancy for the thin film or the structure including the thin film.

[0063] It should be noted that during actual use, the liquid can enter and exit the tank body through the open end of the tank body, or liquid inlet holes and liquid outlet holes can be provided on the side wall of the tank body near the bottom, as long as the liquid can enter and exit the tank body.

[0064] As a possible implementation, referring to Figure 1 , the processing device 1 further includes: a liquid inlet pipe 13 and a liquid discharge pipe 14. The liquid inlet pipe 13 is communicated with the accommodation space through an inlet valve, and the liquid discharge pipe 14 is communicated with the accommodation space through an outlet valve. Along the height direction H of the tank body, the liquid inlet pipe 13 is located between the carrier 11 and the liquid discharge pipe 14.

[0065] In some embodiments, the above-mentioned liquid inlet pipe is arranged on the side wall of the tank body near the bottom and is located below the carrier. Further, one end of the liquid inlet pipe communicates with the accommodation space, and the other end communicates with a liquid supply tank in which liquids such as etching liquid, cleaning liquid or removal liquid are stored. The above-mentioned liquid inlet valve is arranged on the liquid inlet pipe and is used to control the liquid to enter the tank body through the liquid inlet pipe.

[0066] The above-mentioned liquid discharge pipe is arranged on the side wall of the tank body near the bottom. Along the height direction of the tank body, the liquid discharge pipe is closer to the bottom of the tank body than the liquid inlet pipe. Further, one end of the liquid discharge pipe communicates with the accommodation space, and the other end communicates with a liquid storage member for storing liquids such as etching liquid, cleaning liquid or removal liquid discharged from the tank body. The above-mentioned liquid outlet valve is arranged on the liquid discharge pipe and is used to control the liquid to discharge from the tank body through the liquid discharge pipe.

[0067] In an optional manner, the material of the liquid inlet pipe includes one or more of polytetrafluoroethylene, ceramics, polycarbonate, glass or quartz. The material of the liquid discharge pipe includes one or more of polytetrafluoroethylene, ceramics, polycarbonate, glass or quartz.

[0068] Based on the above-mentioned processing device, the present invention provides a film transfer method. That is, the film transfer method is applied to a processing device including at least a tank body, a carrier and a target substrate.

[0069] Combined with Figures 1 to 9 , the film transfer method includes:

[0070] Step 101: Form a protective film 4 on the surface of the film 3 grown on the substrate 2 to obtain a film structure 50; that is, the above-mentioned film structure 50 includes a substrate 2, a film 3 and a protective film 4 stacked from top to bottom.

[0071] Exemplarily, the above-mentioned substrate includes a metal substrate. The film includes a graphene film, a molybdenum disulfide film or a tungsten disulfide film. When the film is a graphene film, the size (length and width) of the graphene film is greater than or equal to 1 mm and less than or equal to 305 mm; for example, the size of the graphene film can be 1 mm, 10 mm, 50 mm, 100 mm, 150 mm, 200 mm, 230 mm, 250 mm, 280 mm, 300 mm or 305 mm, etc. In some embodiments, the size of the graphene film is 50 mm. The protective film includes an organic protective film. For example, the material of the protective film can be polymethyl methacrylate (abbreviated as PMMA).

[0072] In one example, forming a protective film on the surface of a thin film grown on a substrate includes: spin-coating a layer of protective film on the surface of the thin film grown on the substrate; along the thickness direction of the thin film structure, the projection of the protective film on the substrate overlaps with the projection of the thin film on the substrate.

[0073] Since the graphene thin film is small in size and thin, if no protective film is formed on the graphene thin film, when the substrate is removed, the graphene thin film floats in the liquid and is not easy to be found, increasing the transfer difficulty. Therefore, when a protective film is formed on the thin film, when the substrate is removed later, the thin film and the protective film are easily found as a whole, reducing the later transfer difficulty, shortening the time to find the thin film, and improving the transfer efficiency.

[0074] Step 102: Inject an etching solution 51 into the tank 10, and the liquid level of the etching solution 51 is higher than the target substrate 12; it should be noted that for the convenience of identification, the position marked in the attached Figures 2 to 4 is the position where the liquid level of the etching solution is located.

[0075] Exemplarily, open the liquid inlet valve, and the etching solution enters the tank through the liquid inlet pipe until the liquid level of the etching solution exceeds the target substrate by a certain distance. The exceeded distance is not specifically limited here as long as it can meet the actual requirements. It should be noted that if the processing device does not include a liquid inlet pipe, the etching solution can be directly injected into the tank through the open end of the tank.

[0076] Step 103: Place the thin film structure in the tank, and the substrate included in the thin film structure is located in the etching solution;

[0077] Exemplarily, place the metal substrate with the graphene thin film and the protective film in the etching solution of the tank.

[0078] Step 104: Use the etching solution to completely remove the substrate to obtain the etched thin film structure;

[0079] Exemplarily, since the metal substrate is in contact with the etching solution, the etching solution can continuously etch and remove the metal substrate until the metal substrate is completely removed. The above etching solution can be an ammonium persulfate solution. It should be noted that the etching solution only acts on the metal substrate and will not damage or remove the thin film and the protective film. As Figure 2 and Figure 3 shown, after completely removing the substrate 2, only the etched thin film structure including the thin film 3 and the protective film 4 floats in the etching solution 51.

[0080] Step 105: Drain the etching solution so that the etched thin film structure adheres to the first bearing surface of the target substrate;

[0081] Exemplarily, open the liquid discharge valve, and the etching solution is discharged from the tank through the liquid discharge pipe. As the liquid level of the etching solution drops, the etched thin film structure is transferred and attached to the first bearing surface of the target substrate, and the thin film included in the etched thin film structure abuts against the first bearing surface. It should be noted that if the processing device does not include a liquid discharge pipe, the etching solution can be directly pumped out through the open end of the tank by a liquid pumping device.

[0082] As a possible implementation, after step 105 is executed and before step 107 is executed, the above thin film transfer method may further include:

[0083] Step 106.1: Place the target substrate 12 and the etched thin film structure attached together in a tank having a cleaning solution 52, and the target substrate 12 abuts against the carrier 11;

[0084] Step 106.2: Rinse the etched thin film structure separated from the target substrate with the cleaning solution to obtain a cleaned thin film structure;

[0085] Example 1: For the same tank, the etching solution in the tank can be completely discharged, and then the cleaning solution is injected into the tank so that only the cleaning solution is in the tank. Then, the etched thin film structure separated from the target substrate is cleaned multiple times with the cleaning solution.

[0086] Example 2: For the same tank, when there is still some etching solution in the tank, the cleaning solution can be injected into the tank to dilute the remaining etching solution. Further, by discharging and injecting the cleaning solution multiple times, the etched thin film structure separated from the target substrate is cleaned multiple times with the cleaning solution.

[0087] Example 3: Take out the target substrate and the etched thin film structure attached together from the tank with some etching solution, and place them in another tank (defined as the second tank for convenience of description) that has not been injected with any liquid or has a small amount of cleaning solution injected (for example, the liquid level of the cleaning solution is lower than the carrier), and the side of the target substrate facing away from the etched thin film structure abuts against the carrier. Then, inject the cleaning solution into the second tank, and clean the etched thin film structure separated from the target substrate multiple times with the cleaning solution.

[0088] It should be noted that the injection of the cleaning solution in the above three examples can be through the liquid inlet pipe or through the open end of the tank. Further, the content of the injected cleaning solution is set according to actual needs as long as the cleaning of the etched thin film structure can be achieved. It should be understood that while cleaning the etched thin film structure, the target substrate located below the etched thin film structure will inevitably be cleaned. Furthermore, the above cleaning solution can be deionized water.

[0089] Step 106.3: Drain the cleaning liquid so that the film included in the cleaned film structure adheres to the first bearing surface of the target substrate;

[0090] Exemplarily, open the liquid outlet valve, and the cleaning liquid is discharged from the tank through the liquid discharge pipe. As the liquid level of the cleaning liquid drops, the cleaned film structure is transferred and adheres to the first bearing surface of the target substrate, and the film included in the cleaned film structure abuts against the first bearing surface. It should be noted that if the processing device does not include a liquid discharge pipe, the cleaning liquid can be directly pumped out through the open end of the tank by a liquid pumping device.

[0091] It should be noted that for the convenience of identification, the position marked in Figure 5 and Figure 6 is the position where the liquid level of the cleaning liquid is located.

[0092] Step 106.4: Process the target substrate with the cleaned film structure attached thereto so that the film included in the cleaned film structure adheres to the first bearing surface of the target substrate.

[0093] In an alternative manner, processing the target substrate with the cleaned film structure attached thereto so that the film included in the cleaned film structure adheres to the first bearing surface of the target substrate may include:

[0094] First, take out the attached cleaned film structure and the target substrate from the tank;

[0095] Next, perform a first heating and drying treatment on the target substrate with the cleaned film structure attached thereto so that the film included in the cleaned film structure adheres to the first bearing surface of the target substrate.

[0096] At this time, the film included in the cleaned film structure is closely attached to the first bearing surface of the target substrate. Further, since the cleaned film structure and the target substrate are attached together, when the first heating and drying treatment is performed on the target substrate, the cleaned film structure will also be heated and dried. At this time, the cleaning liquid on the cleaned film structure and the target substrate can be dried to facilitate subsequent operations.

[0097] Step 107: Process the target substrate with the etched film structure attached thereto so that the film included in the etched film structure adheres to the first bearing surface of the target substrate;

[0098] It should be noted that when the film transfer method does not execute steps 106.1 to 106.4, step 107 is executed after step 105. If the film transfer method executes steps 106.1 to 106.4, then step 107 is not executed, and subsequent operations are directly performed.

[0099] Step 108: Place the target substrate with the etched thin film structure adhered thereto on the carrier, and the target substrate abuts against the carrier;

[0100] It should be noted that after the thin film transfer method executes steps 106.1 to 106.4, step 108 is to place the target substrate with the cleaned thin film structure adhered thereto on the carrier, and the target substrate abuts against the carrier. If the thin film transfer method does not execute steps 106.1 to 106.4, then step 108 is to place the target substrate with the etched thin film structure adhered thereto on the carrier, and the target substrate abuts against the carrier.

[0101] Step 109: Inject a removal liquid 53 into the tank body having the carrier 11, the etched thin film structure adhered together, and the target substrate 12; the above removal liquid can be an acetone solution.

[0102] It should be noted that after the thin film transfer method executes steps 106.1 to 106.4, step 109 is to inject a removal liquid into the tank body having the carrier, the cleaned thin film structure adhered together, and the target substrate. Specifically, open the liquid inlet valve, and the removal liquid enters the tank body having the carrier, the cleaned thin film structure adhered together, and the target substrate through the liquid inlet pipe. If the thin film transfer method does not execute steps 106.1 to 106.4, then step 109 is to inject a removal liquid into the tank body having the carrier, the etched thin film structure adhered together, and the target substrate.

[0103] Step 110: Use the removal liquid to remove the protective film to expose the thin film;

[0104] Exemplarily, when the acetone solution dissolves the protective film, only the graphene thin film remains. Moreover, the graphene thin film adheres to the first bearing surface of the target substrate, and the two will not separate.

[0105] Step 111: Drain the removal liquid to expose the thin film and the target substrate adhered together.

[0106] Exemplarily, open the liquid outlet valve, and the removal liquid is discharged from the tank body through the liquid discharge pipe. As the liquid level of the removal liquid drops, the thin film and the target substrate adhered together are gradually exposed.

[0107] It should be noted that for the convenience of identification, the positions marked in Figure 7 and Figure 8 are the positions where the liquid level of the removal liquid is located.

[0108] As a possible implementation manner, after draining the removal liquid to expose the thin film and the target substrate adhered together, the thin film transfer method further includes:

[0109] Step 112: Take out the thin film and the target substrate adhered together from the tank body;

[0110] Step 113: Perform a second heat drying treatment on the target substrate adhered with the thin film to improve the adhesion between the thin film and the target substrate, so as to ensure that the bonding force between the two meets the actual requirements. When performing the second heat drying treatment on the target substrate adhered with the thin film, the removal liquid on the thin film and the target substrate can also be dried.

[0111] As Figure 9 shown, Figure 9 Figure 1 is an optical microscope photograph of the graphene thin film obtained after transfer. It can be seen from Figure 9 the figure that the transferred graphene thin film is complete, clean and without damage. Compared with the situation in the prior art where many wrinkles and holes are generated in the graphene thin film obtained by the conventional wet transfer process, the film transfer method provided by the present application reduces or eliminates the probability of the graphene thin film breaking or generating wrinkles during the transfer process, and improves the quality of the transferred graphene thin film.

[0112] In the film transfer method provided by the embodiment of the present invention, after the substrate is completely removed by the etching solution, as the etching solution is continuously discharged, the liquid level in the tank gradually drops. At this time, the etched film structure slowly falls onto the target substrate. Under the protection of buoyancy, the impact force on the thin film included in the etched film structure from the target substrate is reduced. Therefore, the probability of film breakage can be reduced and the integrity of the film can be improved. Further, the target substrate attached with the etched film structure is processed so that the etched film structure adheres to the first bearing surface of the target substrate. At this time, the bonding force between the thin film and the target substrate is improved, and the thin film is prevented from moving easily relative to the first bearing surface of the target substrate. Still further, the protective film is removed by the removal liquid to obtain the thin film adhered to the target substrate. At this time, the protective film above the thin film is removed, and the thin film is not damaged by the removal liquid. After the protective film included in the etched film structure is removed by the removal liquid, as the removal liquid is continuously discharged, the liquid level in the tank gradually drops, and the adhered thin film and target substrate are exposed. At this time, the process of transferring the thin film from the substrate on which it grows to the target substrate is completed. Combining the foregoing description, during the process of transferring the thin film from the substrate on which it grows to the target substrate, the impact force on the thin film is smaller than that on the graphene thin film when directly lifting the graphene thin film by a silicon wafer in the prior art. Therefore, the probability of film breakage can be reduced and the integrity of the film can be improved.

[0113] Combined with the foregoing description, during the process of transferring a thin film from the substrate on which it is grown to a target substrate, when placing the graphene thin film or a structure including the graphene thin film in a liquid (etching solution, cleaning solution or removal solution), it is slow, so the graphene thin film or the structure including the graphene thin film usually falls vertically onto the target substrate. Based on this, when placing the graphene thin film or the structure including the graphene thin film, it can be placed on the liquid region corresponding to the preset position of the target substrate. Alternatively, when the graphene thin film or the structure including the graphene thin film floats on the liquid surface, a blowing device can be used to blow the graphene thin film or the structure including the graphene thin film to adjust the relative position between the graphene thin film or the structure including the graphene thin film and the target substrate, so that the graphene thin film finally adheres to the preset position of the target substrate. Based on this, the thin film transfer method provided by the present invention can control the specific position where the graphene thin film is transferred to the target substrate.

[0114] In addition, the above thin film transfer method does not limit the size of the graphene thin film, can realize the transfer of a large-area graphene thin film, and ensures the quality of the graphene thin film during the transfer process to retain the inherent excellent properties of the graphene thin film.

[0115] In a third aspect, an embodiment of the present invention further provides a terminal device. The terminal device includes: a processor and a communication interface, the communication interface is coupled to the processor, and the processor is configured to run a computer program or instruction to implement the thin film transfer method as described in the above technical solution.

[0116] For the beneficial effects of the third aspect and its various implementation manners in the present invention, reference can be made to the beneficial effects in the first aspect and its various implementation manners, which will not be elaborated here.

[0117] See Figure 10 , the terminal device provided by the embodiment of the present invention includes a first processor 61 and a communication interface 62. The communication interface 62 is coupled to the first processor 61.

[0118] See Figure 10 , the above first processor 61 may be a general-purpose central processing unit (CPU), a microprocessor, an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the solution of the present invention. The above communication interface 62 may be one or more. The communication interface 62 can use any transceiver-like device for communicating with other devices or communication networks.

[0119] See Figure 10 , the above terminal device may further include a communication line 63. The communication line 63 may include a path for transmitting information between the above components.

[0120] Optionally, referring to Figure 10 , the terminal device may further include a first memory 64. The first memory 64 is used to store computer instructions for executing the solution of the present invention and is controlled by the first processor 61 for execution. The first processor 61 is used to execute the computer instructions stored in the first memory 64, so as to implement the method for determining the connectivity between computer rooms provided by the embodiments of the present invention.

[0121] Referring to Figure 10 , the first memory 64 may be a read-only memory (ROM) or other types of static storage devices that can store static information and instructions, a random access memory (RAM) or other types of dynamic storage devices that can store information and instructions, or may also be an electrically erasable programmable read-only memory (EEPROM), a compact disc read-only memory (CD-ROM) or other optical disc storage, optical disc storage (including compact discs, laser discs, optical discs, digital versatile discs, Blu-ray discs, etc.), magnetic disk storage media or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and can be accessed by a computer, but is not limited thereto. The first memory 64 may exist independently and be connected to the first processor 61 through a communication line 63. The first memory 64 may also be integrated with the first processor 61.

[0122] Optionally, the computer instructions in the embodiments of the present invention may also be referred to as application program code, and the embodiments of the present invention do not make specific limitations thereto. In a specific implementation, as an embodiment, referring to Figure 10 , the first processor 61 may include one or more CPUs, referring to Figure 4 CPU0 and CPU1 in

[0123] In a specific implementation, as an embodiment, referring to Figure 10 , the terminal device may include multiple first processors 61, referring to Figure 4 the first processor 61 and the second processor 65 in

[0124] The method disclosed in the embodiments of the present invention can be applied to or implemented by a processor. The processor may be an integrated circuit chip with signal processing capabilities. During implementation, the steps of the above method can be completed by the integrated logic circuit in the hardware of the processor or instructions in software form. The above processor may be a general-purpose processor, a digital signal processor (DSP), an ASIC, a field-programmable gate array (FPGA), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components. It can implement or execute the various methods, steps, and logic block diagrams disclosed in the embodiments of the present invention. The general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc. The steps of the method disclosed in combination with the embodiments of the present invention can be directly embodied as being executed and completed by a hardware decoding processor, or executed and completed by a combination of hardware and software modules in the decoding processor. The software module may be located in a mature storage medium in the art such as a random access memory, flash memory, read-only memory, programmable read-only memory, or electrically erasable programmable memory, register, etc. This storage medium is located in the memory, and the processor reads the information in the memory and combines its hardware to complete the steps of the above method.

[0125] The embodiments of the present invention further provide a computer-readable storage medium. Instructions are stored in the computer-readable storage medium, and when the instructions are run, the functions executed by the terminal device in the above embodiments are implemented.

[0126] In the above embodiments, it can be implemented in whole or in part by software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented in whole or in part in the form of a computer program product. The above computer program product includes one or more computer programs or instructions. When the above computer program or instructions are loaded and executed on a computer, the processes or functions described in the embodiments of the present invention are executed in whole or in part. The above computer can be a general-purpose computer, a special-purpose computer, a computer network, a terminal, a user device, or other programmable devices. The above computer program or instructions can be stored in a computer-readable storage medium, or transmitted from one computer-readable storage medium to another computer-readable storage medium. For example, the above computer program or instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center in a wired or wireless manner. The above computer-readable storage medium can be any available medium that a computer can access, or a data storage device such as a server or data center that integrates one or more available media. The above available medium can be a magnetic medium, such as a floppy disk, a hard disk, or a magnetic tape; it can also be an optical medium, such as a digital video disc (DVD); it can also be a semiconductor medium, such as a solid state drive (SSD).

[0127] Although the present invention has been described in connection with various embodiments, however, in the process of implementing the claimed invention, those skilled in the art can understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "a" or "one" does not exclude a plurality. A single processor or other unit can implement several functions recited in the claims. Certain measures are recited in mutually different dependent claims, but this does not mean that these measures cannot be combined to produce good results.

[0128] Although the present invention has been described in connection with specific features and their embodiments, it is obvious that various modifications and combinations can be made without departing from the spirit and scope of the present invention. Accordingly, this specification and the drawings are merely exemplary illustrations of the present invention defined by the appended claims, and are considered to have covered any and all modifications, variations, combinations, or equivalents within the scope of the present invention. Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these changes and modifications.

Claims

1. A film transfer method, characterized in that, A processing apparatus including a tank body, a carrier, and a target substrate; the tank body has an open end and a receiving space; the carrier is disposed in the tank body; along the height direction of the tank body, the carrier and the bottom wall of the tank body are spaced apart; along the thickness direction of the carrier, a through hole penetrating the carrier is formed on the carrier; the thickness direction of the carrier is consistent with the height direction of the tank body; the target substrate is disposed on the carrier; the target substrate has a first bearing surface, and the first bearing surface is parallel to the horizontal plane; At least a part of the through holes is located outside the periphery of the target substrate; The thin film transfer method includes: Forming a protective film on the surface of the thin film grown on the substrate to obtain a thin film structure; Injecting an etching solution into the tank body, and the liquid level of the etching solution is higher than the target substrate; Placing the thin film structure in the tank body, and the substrate included in the thin film structure is located in the etching solution; Completely removing the substrate by using the etching solution to obtain an etched thin film structure; Discharging the etching solution so that the etched thin film structure adheres to the first bearing surface of the target substrate; Processing the target substrate attached with the etched thin film structure so that the thin film included in the etched thin film structure adheres to the first bearing surface of the target substrate; Placing the target substrate adhered with the etched thin film structure on the carrier, and the target substrate abuts against the carrier; Injecting a removing solution into the tank body having the carrier, the etched thin film structure adhered together, and the target substrate; Removing the protective film by using the removing solution to expose the thin film; Discharging the removing solution to expose the thin film and the target substrate adhered together.

2. The thin film transfer method according to claim 1, wherein Before processing the target substrate attached with the etched thin film structure so that the thin film included in the etched thin film structure adheres to the first bearing surface of the target substrate, the thin film transfer method further includes: Placing the target substrate and the etched thin film structure adhered together in a tank body having a cleaning solution, and the target substrate abuts against the carrier; Rinsing the etched thin film structure separated from the target substrate by using the cleaning solution to obtain a cleaned thin film structure; Discharging the cleaning solution so that the thin film included in the cleaned thin film structure adheres to the first bearing surface of the target substrate; Processing the target substrate attached with the cleaned thin film structure so that the thin film included in the cleaned thin film structure adheres to the first bearing surface of the target substrate.

3. The thin film transfer method according to claim 2, characterized in that Processing the target substrate attached with the cleaned thin film structure so that the thin film included in the cleaned thin film structure adheres to the first bearing surface of the target substrate includes: Taking out the cleaned thin film structure and the target substrate adhered together from the tank body; Performing a first heating and drying treatment on the target substrate attached with the cleaned thin film structure so that the thin film included in the cleaned thin film structure adheres to the first bearing surface of the target substrate.

4. The thin film transfer method according to claim 1, wherein After discharging the removal liquid to expose the adhered thin film and the target substrate, the thin film transfer method further includes: Taking out the adhered thin film and the target substrate from the tank body; Performing a second heat drying treatment on the target substrate adhered with the thin film to improve the adhesion between the thin film and the target substrate.

5. The thin film transfer method according to claim 1, characterized in that, The forming of the protective film on the surface of the thin film grown on the substrate includes: Spin-coating a protective film on the surface of the thin film grown on the substrate; along the thickness direction of the thin film structure, the projection of the protective film on the substrate overlaps with the projection of the thin film on the substrate.

6. The thin film transfer method according to claim 1, wherein, The substrate includes a metal substrate; the thin film includes a graphene thin film, a molybdenum disulfide thin film or a tungsten disulfide thin film; the protective film includes an organic protective film; the etching solution includes an ammonium persulfate solution; the removal liquid includes an acetone solution.

7. A processing device, characterized in that, For implementing the thin film transfer method according to any one of claims 1 to 6; the processing device includes: A tank body having an open end and a receiving space; A carrier disposed in the tank body; along the height direction of the tank body, the carrier and the bottom wall of the tank body are spaced apart; along the thickness direction of the carrier, a through hole penetrating the carrier is formed on the carrier; the thickness direction of the carrier is consistent with the height direction of the tank body; A target substrate disposed on the carrier; the target substrate has a first bearing surface, and the first bearing surface is parallel to the horizontal plane; at least part of the through holes are located outside the target substrate.

8. The processing device according to claim 7, wherein The processing device further includes: A liquid inlet pipe, and the liquid inlet pipe is communicated with the receiving space through a liquid inlet valve; A liquid discharge pipe, and the liquid discharge pipe is communicated with the receiving space through a liquid discharge valve; Along the height direction of the tank body, the liquid inlet pipe is located between the carrier and the liquid discharge pipe.

9. The processing device according to claim 8, characterized in that, The material of the tank body includes one or more of polytetrafluoroethylene, ceramic, polycarbonate, glass or quartz; The material of the liquid inlet pipe includes one or more of polytetrafluoroethylene, ceramic, polycarbonate, glass or quartz; The material of the liquid discharge pipe includes one or more of polytetrafluoroethylene, ceramic, polycarbonate, glass or quartz.

10. A terminal device, characterized in that, The terminal device includes: a processor and a communication interface, the communication interface is coupled with the processor, and the processor is used to run a computer program or instruction to implement the thin film transfer method according to any one of claims 1 to 6.

Images