PVD (Physical Vapor Deposition) process method for preparing reef blue from target material

Abstract

The invention belongs to the technical field of film layer processes, and particularly provides a target material preparation reef blue PVD process method which sequentially comprises a Ti base layer, a TiN middle layer, a TiAlN transition layer and an AlTiN color layer from bottom to top, and the preparation method comprises the following steps that S1, a plurality of components are placed in a vacuum cavity; s2, argon is introduced into the vacuum cavity, and ion beams are used for bombarding the surface of the component; s3, argon is introduced into the vacuum cavity, high-purity Ti serves as a target material, and a Ti base layer is formed on the surface of the component; s4, high-purity Ti is used as a target material, argon and reaction gas nitrogen are introduced into the vacuum cavity, and a TiN intermediate layer is formed; s5, high-purity Ti and Al serve as target materials, argon and reaction gas nitrogen are introduced into the vacuum cavity, and a TiAlN transition layer is formed; and S6, high-purity Al and Ti serve as target materials, argon and reaction gas nitrogen are introduced into the vacuum cavity, an AlTiN color layer is formed, and a reef blue film layer is finally formed on the surface of the component.

Description

Technical Field

[0001] The present invention relates to the technical field of film layer processes, and in particular to a method for preparing a reef blue PVD process for a target material. Background Art

[0002] PVD is a technology that, in a vacuum environment, converts solid or liquid materials into gaseous atoms, molecules, or ions by physical means and deposits a thin film on the surface of a substrate.

[0003] With the wide application of physical vapor deposition (PVD) technology in the field of surface coatings, the demand for surface decoration and functional coatings of metal and ceramic components is increasing. Among them, the blue film layer is favored in smart wearables, consumer electronics, and automotive parts due to its aesthetic value and weather resistance. Especially in the field of smart wearables, PVD treatment is carried out on the surface of smart wearable devices to generate a blue film layer. However, when the conventional PVD technology is used to prepare a blue film layer, the color is prone to unevenness, and the color is difficult to control, consuming more target materials. Summary of the Invention

[0004] In view of the above defects, the present invention provides a method for preparing a reef blue PVD process for a target material, which can form a reef blue film layer with uniform color and can control the depth of the color.

[0005] To achieve the above object, the present invention provides the following technical solution: A method for preparing a reef blue PVD process for a target material, including a reef blue film layer, the reef blue film layer includes a Ti bottom layer, a TiN intermediate layer, a TiAlN transition layer, and an AlTiN color layer arranged in sequence from bottom to top, and the preparation method of the reef blue film layer specifically includes the following steps: S1. Place a plurality of components in a vacuum chamber, the components and the target material are always parallel and in a rotating state, and the vacuum degree in the vacuum chamber is reduced to below 6×10-3 Pa; S2. Introduce argon gas into the vacuum chamber and bombard the surface of the components with an ion beam; S3. Use a vacuum coating magnetron sputtering device, use high-purity Ti as the target material, introduce argon gas into the vacuum chamber, and form a Ti bottom layer on the surface of the components; S4. Use a vacuum coating magnetron sputtering device, use high-purity Ti as the target material, introduce argon gas and reaction gas nitrogen into the vacuum chamber, and form a TiN intermediate layer on the surface of the Ti bottom layer formed in step S3; S5. Use a vacuum coating magnetron sputtering device, use high-purity Ti and Al as the target materials, introduce argon gas and reaction gas nitrogen into the vacuum chamber, and form a TiAlN transition layer on the surface of the TiN intermediate layer formed in step S4; S6. Use a vacuum coating magnetron sputtering device. With high-purity Al and Ti as the targets, introduce argon and the reactive gas nitrogen into the vacuum chamber, and form an AlTiN color layer on the surface of the TiAlN transition layer formed in step S5, and finally form a reef blue film layer on the surface of the component.

[0006] As a further improvement of the present invention, the color range values of the reef blue film layer are as follows: L: 41 - 45; a: -1 - -2; b: -9 - -11.

[0007] As a further improvement of the present invention, the rotation speed of the component in step S1 is 7 - 10 r / min.

[0008] As a further improvement of the present invention, when bombarding the component in step S2, the bias voltage is controlled at 100 - 300 V, the ion beam sputtering current is controlled at 0.5 A, and the time is controlled at 10 - 20 min.

[0009] As a further improvement of the present invention, in forming the Ti underlayer in step S3, the bias voltage is controlled at 100 - 200 V, the current flowing through the Ti target is controlled at 6 - 10 A, and the time is controlled at 10 - 20 min.

[0010] As a further improvement of the present invention, in forming the TiN intermediate layer in step S4, the bias voltage is controlled at 50 - 100 V, the current flowing through the Ti target is controlled at 6 - 10 A, the time is controlled at 20 - 50 min, and the flow rate of the reactive gas nitrogen introduced is 10 - 20 sccm.

[0011] As a further improvement of the present invention, in forming the TiAlN transition layer in step S5, the bias voltage is controlled at 50 - 100 V, the currents flowing through the Ti target and the Al target are both controlled at 6 - 10 A, the time is controlled at 20 - 50 min, and the flow rate of the reactive gas nitrogen introduced is 20 - 30 sccm.

[0012] As a further improvement of the present invention, the flow rate range of the reactive gas nitrogen introduced into the TiAlN transition layer can be increased to 10 - 40 sccm.

[0013] As a further improvement of the present invention, in forming the AlTiN color layer in step S6, the bias voltage is controlled at 50 - 100 V, the current flowing through the Ti target is controlled at 3 - 3.5 A, the current flowing through the Al target is controlled at 6 - 6.5 A, the time is controlled at 30 - 35 min, and the flow rate of the reactive gas nitrogen introduced is 40 - 45 sccm.

[0014] Advantages of the present invention: 1. Single-layer or simple multi-layer coatings are prone to peeling due to stress concentration, and the adhesion between the color layer and the substrate is insufficient, resulting in uneven color. The film layer formed by the present invention has a four-layer gradient structure. The Ti underlayer is deposited under bias voltage to enhance the adhesion between the substrate and the film layer; TiN intermediate layer: a dense structure is formed through a medium nitrogen flow rate to buffer the difference in thermal expansion; TiAlN transition layer: Ti / Al dual-target current sputtering is used to achieve a smooth transition of components; AlTiN color layer: a high-Al content layer dominated by the Al target, with both wear resistance and color stability. Through the TiAlN transition layer, a gradual change in composition is achieved, avoiding sudden changes in composition between layers, enabling uniform stress transition and distribution. The formed reef blue film layer has high hardness and uniform reef blue color.

[0015] 2. Traditional processes rely on adjusting the alloy target or gas flow rate in a fixed ratio, with poor flexibility in composition control, and the color of the generated film layer is relatively fixed. The present invention adopts the Ti, Al dual-target independent current control technology. Only through the Ti, Al dual targets, the TiAlN transition layer and the AlTiN color layer can be generated. By adjusting and reducing the current flowing through the Ti target and maintaining a high current of the Al target, the color layer can be directly regulated, thereby obtaining reef blue film layers with different color depths.

[0016] 3. By adjusting the flow rate of the reaction gas nitrogen when generating the TiAlN transition layer, the color depth of the finally obtained reef blue film layer can also be adjusted. Specific Embodiments

[0017] In order to make the objectives, technical solutions and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0018] The present invention provides a target material preparation method for reef blue PVD process, including a reef blue film layer, and the reef blue film layer includes a Ti underlayer, a TiN intermediate layer, a TiAlN transition layer and an AlTiN color layer arranged in sequence from bottom to top.

[0019] The preparation method of this reef blue film layer includes the following steps: S1. A plurality of components are fixed to the bracket and then placed in the vacuum chamber. The components and the target material are always parallel, and the components rotate in the vacuum chamber with the bracket all the time, with a rotation speed of 7 - 10 r / min, and the vacuum degree in the vacuum chamber is reduced to below 6×10 -3 Pa.

[0020] S2. Argon is introduced into the vacuum chamber, and the surface of the component is bombarded with an ion beam. The bias voltage is controlled at 100 - 300 V, the ion beam sputtering current is controlled at 0.5 A, and the time is controlled at 10 - 20 min.

[0021] S3. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon gas into the vacuum chamber. Control the bias voltage at 100 - 200 V, control the current flowing through the Ti target at 6 - 10 A, and control the time at 10 - 20 min to form a Ti underlayer on the surface of the component.

[0022] S4. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon gas and reactive gas nitrogen into the vacuum chamber. Control the bias voltage at 50 - 100 V, control the current flowing through the Ti target at 6 - 10 A, control the time at 20 - 50 min, and the flow rate of the introduced reactive gas nitrogen is 10 - 20 sccm to form a TiN intermediate layer on the surface of the Ti underlayer formed in step S3.

[0023] S5. Use a vacuum coating magnetron sputtering device. With high-purity Ti and Al as the targets, introduce argon gas and reactive gas nitrogen into the vacuum chamber. Control the bias voltage at 50 - 100 V, control the current flowing through both the Ti target and the Al target at 6 - 10 A, control the time at 20 - 50 min, and the flow rate of the introduced reactive gas nitrogen is 20 - 30 sccm to form a TiAlN transition layer on the surface of the TiN intermediate layer formed in step S4.

[0024] The flow rate range of the introduced reactive gas nitrogen in the TiAlN transition layer can be increased to 10 - 40 sccm.

[0025] S6. Use a vacuum coating magnetron sputtering device. With high-purity Al and Ti as the targets, introduce argon gas and reactive gas nitrogen into the vacuum chamber to form an AlTiN color layer on the surface of the TiAlN transition layer formed in step S5. Control the bias voltage at 50 - 100 V, control the current flowing through the Ti target at 3 - 3.5 A, control the current flowing through the Al target at 6 - 6.5 A, control the time at 30 - 35 min, and the flow rate of the introduced reactive gas nitrogen is 40 - 45 sccm. Finally, a reef blue film layer is formed on the surface of the component.

[0026] Measure the color range values of the formed reef blue film layer as follows: L: 41 - 45; a: -1 - -2; b: -9 - -11.

[0027] Example 1 S1. Fix 50 dials to the bracket and then place them in the vacuum chamber. The dials are always parallel to the target, and the dials rotate in the vacuum chamber with the bracket all the time at a rotational speed of 7 r / min. The vacuum degree in the vacuum chamber drops to 6×10 -3 Pa.

[0028] S2. Introduce argon gas into the vacuum chamber, and use an ion beam to bombard the surface of the component. The bias voltage is controlled at 100 V, the ion beam sputtering current is controlled at 0.5 A, and the time is controlled at 10 min.

[0029] S3. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon gas into the vacuum chamber. The bias voltage is controlled at 100 V, the current flowing through the Ti target is controlled at 6 A, and the time is controlled at 10 min to form a Ti underlayer on the surface of the component.

[0030] S4. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon gas and reactive gas nitrogen into the vacuum chamber. The bias voltage is controlled at 50 V, the current flowing through the Ti target is controlled at 6 A, the time is controlled at 20 min, and the flow rate of the introduced reactive gas nitrogen is 10 sccm to form a TiN intermediate layer on the surface of the Ti underlayer formed in step S3.

[0031] S5. Use a vacuum coating magnetron sputtering device. With high-purity Ti and Al as the targets, introduce argon gas and reactive gas nitrogen into the vacuum chamber. The bias voltage is controlled at 50 V, the currents flowing through the Ti target and the Al target are both controlled at 6 A, the time is controlled at 20 min, and the flow rate of the introduced reactive gas nitrogen is 20 sccm to form a TiAlN transition layer on the surface of the TiN intermediate layer formed in step S4.

[0032] S6. Use a vacuum coating magnetron sputtering device. With high-purity Al and Ti as the targets, introduce argon gas and reactive gas nitrogen into the vacuum chamber to form an AlTiN color layer on the surface of the TiAlN transition layer formed in step S5. The bias voltage is controlled at 50 V, the current flowing through the Ti target is controlled at 3 A, the current flowing through the Al target is controlled at 6 A, the time is controlled at 30 min, and the flow rate of the introduced reactive gas nitrogen is 40 sccm. Finally, a reef blue film layer is formed on the surface of the component.

[0033] Example 2 S1. Fix several components to the bracket and then place them in the vacuum chamber. The components and the target are always parallel, and the dial rotates in the vacuum chamber with the bracket all the time at a rotational speed of 8 r / min. The vacuum degree in the vacuum chamber drops to 6×10 -3 Pa.

[0034] S2. Introduce argon gas into the vacuum chamber, and use an ion beam to bombard the surface of the component. The bias voltage is controlled at 150 V, the ion beam sputtering current is controlled at 0.5 A, and the time is controlled at 12 min.

[0035] S3. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon gas into the vacuum chamber, control the bias voltage at 125 V, control the current flowing through the Ti target at 7 A, and control the time at 12 min to form a Ti underlayer on the surface of the component.

[0036] S4. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon gas and reactive gas nitrogen into the vacuum chamber, control the bias voltage at 60 V, control the current flowing through the Ti target at 7 A, control the time at 30 min, and the flow rate of the introduced reactive gas nitrogen is 12 sccm to form a TiN intermediate layer on the surface of the Ti underlayer formed in step S3.

[0037] S5. Use a vacuum coating magnetron sputtering device. With high-purity Ti and Al as the targets, introduce argon gas and reactive gas nitrogen into the vacuum chamber, control the bias voltage at 60 V, control the currents flowing through the Ti target and the Al target at 7 A respectively, control the time at 30 min, and the flow rate of the introduced reactive gas nitrogen is 22 sccm to form a TiAlN transition layer on the surface of the TiN intermediate layer formed in step S4.

[0038] S6. Use a vacuum coating magnetron sputtering device. With high-purity Al and Ti as the targets, introduce argon gas and reactive gas nitrogen into the vacuum chamber to form an AlTiN color layer on the surface of the TiAlN transition layer formed in step S5. Control the bias voltage at 60 V, control the current flowing through the Ti target at 3.2 A, control the current flowing through the Al target at 6.2 A, control the time at 32 min, and the flow rate of the introduced reactive gas nitrogen is 42 sccm. Finally, a reef blue film layer is formed on the surface of the component.

[0039] Example 3 S1. Fix several components to the bracket and then place them in the vacuum chamber. The components are always parallel to the target. The dial rotates in the vacuum chamber with the bracket all the time at a speed of 9 r / min. The vacuum degree in the vacuum chamber drops to 6×10 -3 Pa.

[0040] S2. Introduce argon gas into the vacuum chamber and use an ion beam to bombard the surface of the component. Control the bias voltage at 200 V, control the ion beam sputtering current at 0.5 A, and control the time at 15 min.

[0041] S3. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon gas into the vacuum chamber, control the bias voltage at 150 V, control the current flowing through the Ti target at 8 A, and control the time at 15 min to form a Ti underlayer on the surface of the component.

[0042] S4. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon and reactive gas nitrogen into the vacuum chamber. Control the bias voltage at 75 V, the current flowing through the Ti target at 8 A, the time at 40 min, and the flow rate of the reactive gas nitrogen at 15 sccm to form a TiN intermediate layer on the surface of the Ti underlayer formed in step S3.

[0043] S5. Use a vacuum coating magnetron sputtering device. With high-purity Ti and Al as the targets, introduce argon and reactive gas nitrogen into the vacuum chamber. Control the bias voltage at 75 V, the currents flowing through the Ti target and the Al target at 8 A, the time at 40 min, and the flow rate of the reactive gas nitrogen at 25 sccm to form a TiAlN transition layer on the surface of the TiN intermediate layer formed in step S4.

[0044] S6. Use a vacuum coating magnetron sputtering device. With high-purity Al and Ti as the targets, introduce argon and reactive gas nitrogen into the vacuum chamber to form an AlTiN color layer on the surface of the TiAlN transition layer formed in step S5. Control the bias voltage at 75 V, the current flowing through the Ti target at 3.4 A, the current flowing through the Al target at 6.4 A, the time at 34 min, and the flow rate of the reactive gas nitrogen at 44 sccm. Finally, a reef blue film layer is formed on the surface of the component.

[0045] Example 4 S1. Fix several components to the bracket and then place them in the vacuum chamber. The components and the target are always parallel, and the dial rotates in the vacuum chamber with the bracket all the time at a speed of 10 r / min. The vacuum degree in the vacuum chamber is reduced to below 6×10 -3 Pa.

[0046] S2. Introduce argon into the vacuum chamber and use an ion beam to bombard the surface of the component. Control the bias voltage at 300 V, the ion beam sputtering current at 0.5 A, and the time at 20 min.

[0047] S3. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon into the vacuum chamber. Control the bias voltage at 200 V, the current flowing through the Ti target at 10 A, and the time at 20 min to form a Ti underlayer on the surface of the component.

[0048] S4. Use a vacuum coating magnetron sputtering device. With high-purity Ti as the target, introduce argon and reactive gas nitrogen into the vacuum chamber. Control the bias voltage at 100 V, the current flowing through the Ti target at 10 A, the time at 50 min, and the flow rate of the reactive gas nitrogen at 20 sccm to form a TiN intermediate layer on the surface of the Ti underlayer formed in step S3.

[0049] S5. Using a vacuum coating magnetron sputtering device, with high-purity Ti and Al as the targets, argon and reactive gas nitrogen are introduced into the vacuum chamber. The bias voltage is controlled at 100 V, the current flowing through both the Ti target and the Al target is controlled at 10 A, the time is controlled at 50 min, and the flow rate of the reactive gas nitrogen is 30 sccm. A TiAlN transition layer is formed on the surface of the TiN intermediate layer formed in step S4.

[0050] S6. Using a vacuum coating magnetron sputtering device, with high-purity Al and Ti as the targets, argon and reactive gas nitrogen are introduced into the vacuum chamber. An AlTiN color layer is formed on the surface of the TiAlN transition layer formed in step S5. The bias voltage is controlled at 100 V, the current flowing through the Ti target is controlled at 3.5 A, the current flowing through the Al target is controlled at 6.5 A, the time is controlled at 35 min, and the flow rate of the reactive gas nitrogen is 45 sccm. A reef blue film layer is finally formed on the surface of the component.

[0051] Example 5 This example is based on Example 4, with the difference that in step S5, the flow rate of the reactive gas nitrogen is 10 sccm.

[0052] Example 6 This example is based on Example 4, with the difference that in step S5, the flow rate of the reactive gas nitrogen is 40 sccm.

[0053] Example 7 This example is based on Example 4, with the difference that in step S6, the current flowing through the Ti target is controlled at 3 A.

[0054] Example 8 This example is based on Example 4, with the difference that in step S6, the current flowing through the Ti target is controlled at 3.3 A.

[0055] Comparative Example 1 S1. Fix 50 dials to the bracket and then place them in the vacuum chamber. The dials are always parallel to the targets, and the dials rotate in the vacuum chamber with the bracket all the time, with a rotation speed of 7 r / min. The vacuum degree in the vacuum chamber is reduced to 6×10 -3 Pa.

[0056] S2. Introduce argon into the vacuum chamber and use an ion beam to bombard the surface of the component. The bias voltage is controlled at 100 V, the ion beam sputtering current is controlled at 0.5 A, and the time is controlled at 10 min.

[0057] S3. Use a vacuum coating magnetron sputtering equipment. With high-purity Ti as the target, introduce argon gas into the vacuum chamber, control the bias voltage at 100 V, control the current flowing through the Ti target at 6 A, and control the time at 10 min to form a Ti underlayer on the surface of the component.

[0058] S4. Use a vacuum coating magnetron sputtering equipment. With high-purity Ti as the target, introduce argon gas and reactive gas nitrogen into the vacuum chamber, control the bias voltage at 50 V, control the current flowing through the Ti target at 6 A, control the time at 20 min, and the flow rate of the introduced reactive gas nitrogen is 10 sccm to form a TiN intermediate layer on the surface of the Ti underlayer formed in step S3.

[0059] S5. Use a vacuum coating magnetron sputtering equipment. With high-purity TiAl as the target (the atomic percentage of Ti:Al is 50:50), introduce argon gas and reactive gas nitrogen into the vacuum chamber, control the bias voltage at 50 V, control the current flowing through the high-purity TiAl target at 6 A, control the time at 20 min, and the flow rate of the introduced reactive gas nitrogen is 20 sccm to form a TiAlN transition layer on the surface of the TiN intermediate layer formed in step S4.

[0060] S6. Use a vacuum coating magnetron sputtering equipment. With high-purity AlTi as the target (the atomic percentage of Al:Ti is approximately 67:33), introduce argon gas and reactive gas nitrogen into the vacuum chamber to form an AlTiN color layer on the surface of the TiAlN transition layer formed in step S5. Control the bias voltage at 50 V, control the current flowing through the high-purity AlTi target at 4 A, control the time at 10 min, and the flow rate of the introduced reactive gas nitrogen is 30 sccm. Finally, a reef blue film layer is formed on the surface of the component.

[0061] Comparative Example 2 This example is based on Comparative Example 1, and the difference is that in step S6, the current flowing through the high-purity AlTi target is controlled to be 3 A.

[0062] Comparative Example 3 This example is based on Comparative Example 1, and the difference is that in step S6, the current flowing through the high-purity AlTi target is controlled to be 4.5 A.

[0063] Perform color detection on the coating products obtained from the above examples and comparative examples. For each example and comparative example, 10 components are taken for detection, and the measured results are averaged. The detection results are shown in the following table.

[0064]

[0065] From the comparison of the test results of Examples 4, 5, and 6 in the above table, it can be seen that when using high-purity Ti and high-purity Al as targets, when forming the TiAlN transition layer, by adjusting the flow rate of the reaction gas nitrogen introduced, the depth of the formed reef blue film layer can be adjusted.

[0066] From the comparison of the test results of Examples 4, 7, and 8 in the above table, it can be seen that when using high-purity Ti and high-purity Al as targets, when forming the AlTiN color layer, by reducing the current flowing through the Ti target and maintaining a high current for the Al target in step S6, the depth of the formed reef blue film layer can be adjusted.

[0067] From the comparison of the test results of the examples and comparative examples in the above table, it can be seen that when using high-purity Ti and high-purity Al as targets, the depth of the formed reef blue film layer can be controlled only by adjusting the current applied to the targets. If only high-purity AlTi alloy is used as the target for the color layer, even if the magnitude of the applied current is adjusted, the depth of the generated reef blue film layer cannot be effectively controlled.

[0068] The above are only the preferred embodiments of the present invention, and the protection scope of the present invention is not limited to the above-mentioned implementation measures. All technical solutions falling within the concept of the present invention belong to the protection scope of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and refinements should also be regarded as within the protection scope of the present invention.

Claims

1. A reef blue PVD process method for preparing a target, characterized in that, It includes a reef blue film layer, and the reef blue film layer includes a Ti underlayer, a TiN intermediate layer, a TiAlN transition layer, and an AlTiN color layer which are arranged in sequence from bottom to top. The preparation method of the reef blue film layer specifically includes the following steps: S1. Place several components in a vacuum chamber. The components and the target are always parallel and in a rotating state. The vacuum degree in the vacuum chamber is reduced to below 6×10 -3 Pa; S2. Introduce argon gas into the vacuum chamber and bombard the surface of the component using an ion beam; S3. Use a vacuum coating magnetron sputtering device, with high-purity Ti as the target, introduce argon gas into the vacuum chamber, and form a Ti underlayer on the surface of the component; S4. Use a vacuum coating magnetron sputtering device, with high-purity Ti as the target, introduce argon gas and reactive gas nitrogen into the vacuum chamber, and form a TiN intermediate layer on the surface of the Ti underlayer formed in step S3; S5. Use a vacuum coating magnetron sputtering device, with high-purity Ti and Al as the targets, introduce argon gas and reactive gas nitrogen into the vacuum chamber, and form a TiAlN transition layer on the surface of the TiN intermediate layer formed in step S4; S6. Use a vacuum coating magnetron sputtering device, with high-purity Al and Ti as the targets, introduce argon gas and reactive gas nitrogen into the vacuum chamber, and form an AlTiN color layer on the surface of the TiAlN transition layer formed in step S5, and a reef blue film layer is finally formed on the surface of the component.

2. The reef blue PVD process method for preparing a target according to claim 1, characterized in that, The color range values of the reef blue film layer are as follows: L: 41 - 45; a: -1 - -2; b: -9 - -11.

3. The reef blue PVD process method for preparing a target according to claim 1, characterized in that, In step S1, the rotation speed of the component is 7 - 10 r / min.

4. The reef blue PVD process method for preparing a target according to claim 1, characterized in that, When bombarding the component in step S2, the bias voltage is controlled at 100 - 300 V, the ion beam sputtering current is controlled at 0.5 A, and the time is controlled at 10 - 20 min.

5. The reef blue PVD process method for preparing a target according to claim 1, characterized in that, In forming the Ti underlayer in step S3, the bias voltage is controlled at 100 - 200 V, the current flowing through the Ti target is controlled at 6 - 10 A, and the time is controlled at 10 - 20 min.

6. The reef blue PVD process method for preparing a target according to claim 1, characterized in that, In forming the TiN intermediate layer in step S4, the bias voltage is controlled at 50 - 100 V, the current flowing through the Ti target is controlled at 6 - 10 A, the time is controlled at 20 - 50 min, and the flow rate of the introduced reactive gas nitrogen is 10 - 20 sccm.

7. The reef blue PVD process method for preparing a target according to claim 1, characterized in that, In forming the TiAlN transition layer in step S5, the bias voltage is controlled at 50 - 100 V, the currents flowing through the Ti target and the Al target are both controlled at 6 - 10 A, the time is controlled at 20 - 50 min, and the flow rate of the introduced reactive gas nitrogen is 20 - 30 sccm.

8. The reef blue PVD process method for preparing a target according to claim 7, characterized in that, The flow rate range of the introduced reactive gas nitrogen in the TiAlN transition layer can be increased to 10 - 40 sccm.

9. The reef blue PVD process method for preparing a target according to claim 1, characterized in that, In forming the AlTiN color layer in step S6, the bias voltage is controlled at 50 - 100 V, the current flowing through the Ti target is controlled at 3 - 3.5 A, the current flowing through the Al target is controlled at 6 - 6.5 A, the time is controlled at 30 - 35 min, and the flow rate of the introduced reactive gas nitrogen is 40 - 45 sccm.

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