Double telecentric projection photoetching lens

Abstract

The invention relates to a double telecentric projection photoetching lens which is used for an ultraviolet narrow band and comprises a front lens group, a diaphragm and a rear lens group which are sequentially arranged from an object side to an image side, the front lens group comprises four lenses which are sequentially arranged from the object side to the image side, and the rear lens group comprises five lenses which are sequentially arranged from the object side to the image side. According to the double telecentric projection photoetching lens, the full-wave-band high transmittance and the double telecentric characteristic of the lens can be guaranteed within the two ultraviolet narrow wave band ranges of 370 nm to 380 nm or 400 nm to 410 nm, the high resolution, high power, miniaturization and excellent temperature drift performance of the projection photoetching lens are achieved, and exposure analysis of ink with the line width of 2 micrometers can be achieved. Moreover, the tolerance distribution of the projection photoetching lens is more reasonable, the processing and assembling difficulty is greatly reduced, and the mass production difficulty is also greatly reduced, so that the production efficiency of the lens is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of plate exposure, and in particular to a double telecentric projection lithography lens applied to the ultraviolet narrow band. Background Art

[0002] Telecentric lenses have superior characteristics different from ordinary lenses: low distortion, constant magnification, etc. A double telecentric lens refers to an imaging system that satisfies both the characteristics of the object-side telecentric optical path and the image-side telecentric optical path, and it incorporates the common advantages of the two telecentric optical paths.

[0003] With the continuous development of the domestic micro-nano processing industry, the demand for maskless ultraviolet narrow-band double telecentric lithography lenses is also increasing. Compared with the traditional photographic film imaging process, maskless lithography can reduce the process flow by more than 60%. Thanks to the omission of steps such as making photographic plates in the process, small-batch express board companies benefit significantly from the direct imaging technology.

[0004] At present, the development of ultraviolet narrow-band projection lithography lenses in China is in its infancy. The difficulty lies in the extremely high processing accuracy requirements for optical parts of such lithography lenses and the immaturity of the supporting lens manufacturing technology. Coupled with the requirements of high resolution and high power, at present, in addition to the problem of insufficient transmittance of such lenses, the high requirements for image quality such as field curvature distortion have greatly increased the processing accuracy requirements for each part. At the same time, the improvement of the assembly accuracy requirements has also put forward new requirements for the assembly scheme, thus increasing the mass production difficulty.

[0005] In addition, in order to further improve the production capacity of LTI lithography equipment, on the one hand, it is possible to consider increasing the laser illumination energy and shortening the exposure time; on the other hand, it is possible to consider reducing the spacing between the projection lenses in the same row in the lithography equipment as a whole to improve the printing efficiency of the lithography equipment. Increasing the laser illumination energy requires a high-power projection lens that can be stably matched with it. It is mainly manifested that when the lens is used under a high-power laser light source, the optimal focal plane position of the exposure surface drifts by millimeters in the optical axis direction, resulting in a rapid decline in the image analysis ability of the exposure surface and a greatly shortened applicable projection depth of focus; while reducing the spacing between the projection lenses in the same row in the lithography equipment as a whole requires the lens barrel diameter of the projection lens to be minimized as much as possible, which further increases the design difficulty of the ultraviolet narrow-band projection lithography lens. Summary of the Invention

[0006] To solve the above problems, the present invention provides a double telecentric projection lithography lens applied to the ultraviolet narrow band.

[0007] The technical solution of the present invention is: A dual telecentric projection lithography lens for the ultraviolet narrow band, comprising a front lens group, a diaphragm, and a rear lens group arranged in sequence from the object side to the image side. The front lens group includes, arranged in sequence from the object side to the image side: a first lens, which is a meniscus positive lens; a second lens, which is a plano-convex lens; a third lens, which is a meniscus positive lens; a fourth lens, which is a plano-concave lens. The rear lens group includes, arranged in sequence from the object side to the image side: a fifth lens, which is a double concave lens; a sixth lens and a seventh lens are both meniscus positive lenses; an eighth lens and a ninth lens are both double convex lenses.

[0008] Furthermore, the dual telecentric projection lithography lens further includes an auto-focusing component arranged on the side of the ninth lens close to the image side. The auto-focusing component includes two wedge prisms, and the distance between the two wedge prisms is adjustable.

[0009] Furthermore, the focal length F1 of the front lens group ranges from: 98.871 mm ≤ F1 ≤ 110.224 mm; the focal length F2 of the rear lens group ranges from: 48.731 mm ≤ F2 ≤ 55.369 mm; the focal length F of the dual telecentric projection lithography lens ranges from: 1548.19 mm ≤ F ≤ 1681.98 mm; the conjugate distance L of the dual telecentric projection lithography lens ranges from: 418.4 mm ≤ L ≤ 448.1 mm.

[0010] Furthermore, the dual telecentric projection lithography lens satisfies the relational expressions: -14.7 ≤ (f1 + f2 + f3 + f6 + f7 + f8 + f9) / (f4 + f5) ≤ -14.5 4.5 ≤ f1 / F1 + f9 / F2 ≤ 5.5 Wherein, f1 is the focal length of the first lens, f2 is the focal length of the second lens, f3 is the focal length of the third lens, f4 is the focal length of the fourth lens, f5 is the focal length of the fifth lens, f6 is the focal length of the sixth lens, f7 is the focal length of the seventh lens, f8 is the focal length of the eighth lens, f9 is the focal length of the ninth lens, F1 is the focal length of the front lens group, and F2 is the focal length of the rear lens group.

[0011] Furthermore, the distance between the side of the first lens close to the object side and the object side is 92.02 mm to 93.26 mm, and the distance between the side of the ninth lens close to the image side and the image side is 70.60 mm to 78.23 mm; the wavelength range of the dual telecentric projection lithography lens is 370 nm ≤ λ ≤ 380 nm or 400 nm ≤ λ ≤ 410 nm.

[0012] Further, the first lens, the fourth lens, and the fifth lens are all made of flint glass material or light flint glass material, the eighth lens is made of light crown glass material, the second lens, the third lens, and the sixth lens are made of barium crown glass material, and the seventh lens and the ninth lens are made of optical quartz glass material.

[0013] Further, both the front lens group and the rear lens group adopt spherical mirrors. It is defined that if the object side or the image side of each lens protrudes convexly towards the object side, it is positive, and if it protrudes convexly towards the image side, it is negative; The radius range of the object side of the first lens is -355.214 mm < R 11 < -351.214 mm, and the radius range of the image side of the first lens is -103.811 mm < R 12 < -100.811 mm; The radius range of the object side of the second lens is 49.049 mm < R 21 < 55.058 mm, and the radius of the image side of the second lens is R 22 = ∞; The radius range of the object side of the third lens is 44.037 mm < R 31 < 48.089 mm, and the radius range of the image side of the third lens is 154.587 mm < R 32 < 197.589 mm; The radius of the object side of the fourth lens is R 41 = ∞, and the radius range of the image side of the fourth lens is 20.514 < R 42 < 23.514 mm; The radius range of the object side of the fifth lens is -25.520 mm < R 51 < -22.520 mm, and the radius range of the image side of the fifth lens is 158.800 < R 52 < 162.800 mm; The radius range of the object side of the sixth lens is -115.137 mm < R 61 < -110.140 mm, and the radius range of the image side of the sixth lens is -43.594 mm < R 62 < -39.673 mm; The radius range of the object side of the seventh lens is -341.352 mm < R 71 < -328.932 mm, and the radius range of the image side of the seventh lens is -62.335 mm < R 72 < -59.951 mm; The radius range of the object side of the eighth lens is 298.249 mm < R81 <730.275mm, the radius range on the image side of the eighth lens is -44.902mm < R 82 <-42.310mm; The radius range on the object side of the ninth lens is 76.050mm < R 91 <79.050mm, the radius range on the image side of the ninth lens is -391.074mm < R 92 <-388.074mm.

[0014] Furthermore, the front lens group satisfies the relation: -0.9 ≤ (R 51 + R 52 ) / (R 51 - R 52 ) ≤ -0.7 wherein, R 51 is the curvature radius of the object side of the fifth lens, and R 52 is the curvature radius of the image side of the fifth lens; The rear lens group satisfies the relation: 0.7 ≤ (R 81 + R 82 ) / (R 81 - R 82 ) ≤ 0.9 wherein, R 81 is the curvature radius of the object side of the eighth lens, and R 82 is the curvature radius of the image side of the eighth lens.

[0015] Furthermore, the thickness T1 of the first lens ranges from 8.08mm < T1 < 8.68mm, and the air gap L1 between the first lens and the second lens ranges from 81.4mm < L1 < 98.4mm; The thickness T2 of the second lens ranges from 8.74mm < T2 < 11.40mm, and the air gap L2 between the second lens and the third lens ranges from 0.15mm < L2 < 6.32mm; The thickness T3 of the third lens ranges from 12.89mm < T3 < 14.91mm, and the air gap L3 between the third lens and the fourth lens ranges from 0.93mm < L3 < 1.56mm; The thickness T4 of the fourth lens ranges from 11.97mm < T4 < 14.97mm, and the air gap L4 between the fourth lens and the fifth lens ranges from 26.07mm < L4 < 29.48mm; The thickness T5 of the fifth lens ranges from 11.34 mm < T5 < 14.34 mm, and the air gap L5 between the fifth lens and the sixth lens ranges from 1.63 mm < L5 < 2.62 mm; The thickness T6 of the sixth lens ranges from 6.08 mm < T6 < 7.02 mm, and the air gap L6 between the sixth lens and the seventh lens ranges from 0.1 mm < L6 < 0.5 mm; The thickness T7 of the seventh lens ranges from 6.04 mm < T7 < 7.07 mm, and the air gap L7 between the seventh lens and the eighth lens ranges from 0.20 mm < L7 < 4.12 mm; The thickness T8 of the eighth lens ranges from 11.04 mm < T8 < 15.10 mm, and the air gap L8 between the eighth lens and the ninth lens ranges from 26.07 mm < L8 < 47.03 mm; The thickness T9 of the ninth lens ranges from 13.98 mm < T9 < 23.98 mm.

[0016] Furthermore, the front lens group satisfies the relation: 0.09 ≤ T2 / L1 ≤ 0.14 wherein, T2 is the central thickness of the second lens, and L1 is the air gap between the first lens and the second lens; The rear lens group satisfies the relation: 0.02 ≤ T8 / L ≤ 0.04 wherein, T8 is the central thickness of the eighth lens, and L is the conjugate distance of the double telecentric projection lithography lens.

[0017] Furthermore, the effective field of view on the image side of the double telecentric projection lithography lens is Φ48 mm, the numerical aperture on the image side is 0.16, the double telecentric projection lithography lens forms a double telecentric optical system for reduced imaging, and the reduction ratio is set as M = -0.50X, and the lens diameter D of the double telecentric projection lithography lens is D ≤ 45 mm.

[0018] On the other hand, the present invention also provides a direct writing lithography apparatus, including the double telecentric projection lithography lens described in any one of the above technical solutions.

[0019] The dual-telecentric projection lithography lens of the present invention can ensure high transmittance in the full wavelength range and dual-telecentric characteristics of the lens within two ultraviolet narrow wavelength ranges of 370nm - 380nm or 400nm - 410nm, achieving high resolution, high power, miniaturization, and excellent temperature drift performance of the projection lithography lens, and can realize the exposure and resolution of inks with a line width of 2μm. Moreover, the tolerance distribution of the projection lithography lens of the present invention is more reasonable, greatly reducing the difficulty of processing and assembly, and also greatly reducing the difficulty of mass production, thereby improving the production efficiency of the lens. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic structural diagram of the dual-telecentric projection lithography lens according to the first embodiment of the present invention; Figure 2 is the defocus MTF curve graph of the dual-telecentric projection lithography lens in the first embodiment; Figure 3 is the field curvature / distortion graph of the dual-telecentric projection lithography lens in the first embodiment; Figure 4 is the MTF graph of the dual-telecentric projection lithography lens in the first embodiment; Figure 5 is the spot diagram of the dual-telecentric projection lithography lens in the first embodiment; Figure 6 is a schematic structural diagram of the dual-telecentric projection lithography lens according to the second embodiment of the present invention; Figure 7 is the defocus MTF curve graph of the dual-telecentric projection lithography lens in the second embodiment; Figure 8 is the field curvature / distortion graph of the dual-telecentric projection lithography lens in the second embodiment; Figure 9 is the MTF graph of the dual-telecentric projection lithography lens in the second embodiment; Figure 10 is the spot diagram of the dual-telecentric projection lithography lens in the second embodiment; Figure 11 is a schematic diagram of the automatic focusing component. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0021] To facilitate the understanding of the present invention, the present invention will be described more comprehensively below in conjunction with the specific embodiments. Preferred embodiments of the present invention are given in the specific embodiments. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure content of the present invention more thorough and comprehensive.

[0022] The term "optionally" and the like in the present invention refer to embodiments of the present invention that can provide certain beneficial effects in certain cases. However, in the same or other cases, other embodiments may also be optional. In addition, the description of one or more optional embodiments does not imply that other embodiments are not available, nor is it intended to exclude other embodiments from the scope of the present invention.

[0023] Please refer to Figures 1 to 10 As shown, the present invention provides a double telecentric projection lithography lens for the ultraviolet narrow band, including a front lens group, a diaphragm 20, and a rear lens group sequentially arranged from the object side to the image side. The telecentricity of the object side is ensured by the front lens group, and the telecentricity of the image side is ensured by the rear lens group. The diaphragm 20 is specifically optionally an aperture stop.

[0024] The front lens group includes, sequentially arranged from the object side to the image side: a first lens 1, which is a meniscus positive lens; a second lens 2, which is a plano-convex lens; a third lens 3, which is a meniscus positive lens; a fourth lens 4, which is a plano-concave lens; The rear lens group includes, sequentially arranged from the object side to the image side: a fifth lens 5, which is a biconcave lens; a ninth lens 9, which is a biconvex lens; there is at least one meniscus positive lens between the fifth lens 5 and the ninth lens 9. Specifically, three lenses are arranged between the fifth lens 5 and the ninth lens 9, which are the sixth lens 6, the seventh lens 7, and the eighth lens 8 in sequence from the object side to the image side. Both the sixth lens 6 and the seventh lens 7 are meniscus positive lenses; the eighth lens 8 is a biconvex lens.

[0025] It can be understood that plano-convex lenses and biconvex lenses are both positive lenses, and plano-concave lenses and biconcave lenses are both negative lenses.

[0026] In the field of optics, the object side (also known as the object space) and the image side (also known as the image space) refer to two different regions in an optical system, which are used to describe different positions and directions in the process of light propagating from an object to an image. In an optical system, the object side usually represents the side where light propagates from the object surface to the optical system. In this region, light undergoes refraction, reflection, etc., forming the incident end of the optical system; the image side represents the region where light is focused to form an image after being modulated by the optical system. In this region, light forms the final image, that is, the image plane.

[0027] The front lens group is located at the starting point of the optical path and is responsible for initially focusing, splitting, and adjusting the incident light to form an intermediate image. Through the refraction, scattering, and combination effects of the front lens group, the light is preliminarily shaped and modulated.

[0028] The aperture stop 20 is located between the front lens group and the rear lens group. In the present invention, the aperture stop 20 is located between the fourth lens 4 and the fifth lens 5, and plays a role in restricting the incident light angle and reducing scattering interference in the optical system. The aperture stop 20 filters out some non-primary light rays, avoids the influence of interference and stray light, and ensures the clarity and quality of imaging.

[0029] The rear lens group is immediately behind the aperture stop 20 and is responsible for further adjusting, focusing, and imaging the light rays, and finally focusing the light rays onto the image plane to form a clear image. The rear lens group performs the final shaping and modulation of the light rays through its specific optical parameters to ensure the accuracy and clarity of imaging.

[0030] In some embodiments of the present invention, the double telecentric projection lithography lens further includes an autofocus component 10 disposed on the image side of the ninth lens 9. Refer to Figure 11 As shown, the autofocus component 10 includes two wedge prisms, and the distance between the two wedge prisms can be adjusted. By adjusting the distance between the two wedge prisms, the focal plane position of the double telecentric projection lithography lens is adjusted.

[0031] The focal length F1 of the front lens group ranges from 98.871 mm ≤ F1 ≤ 110.224 mm; the focal length F2 of the rear lens group ranges from 48.731 mm ≤ F2 ≤ 55.369 mm; the focal length F of the double telecentric projection lithography lens ranges from 1548.19 mm ≤ F ≤ 1681.98 mm; the conjugate distance L of the double telecentric projection lithography lens ranges from 418.4 mm ≤ L ≤ 448.1 mm.

[0032] Preferably, the double telecentric projection lithography lens satisfies the relational expressions: -14.7 ≤ (f1 + f2 + f3 + f6 + f7 + f8 + f9) / (f4 + f5) ≤ -14.5 (1) 4.5 ≤ f1 / F1 + f9 / F2 ≤ 5.5 (2) Wherein, f1 is the focal length of the first lens 1, f2 is the focal length of the second lens 2, f3 is the focal length of the third lens 3, f4 is the focal length of the fourth lens 4, f5 is the focal length of the fifth lens 5, f6 is the focal length of the sixth lens 6, f7 is the focal length of the seventh lens 7, f8 is the focal length of the eighth lens 8, f9 is the focal length of the ninth lens 9, F1 is the focal length of the front lens group, and F2 is the focal length of the rear lens group.

[0033] The double telecentric projection lithography lens satisfying the relational expression (1) enables good focal length distribution of each lens, and enables the optical system formed by the projection lithography lens to have good image quality and low sensitivity. The double telecentric projection lithography lens satisfying the relational expression (2) can effectively balance the spherical aberration and the field curvature of the optical system.

[0034] The distance between the side of the first lens 1 close to the object side and the object side is 92.02 mm to 93.26 mm, and the distance between the side of the ninth lens 9 close to the image side and the image side is 70.60 mm to 78.23 mm; the double telecentric projection lithography lens is applicable to two ultraviolet narrow wavelength bands, and the wavelength range is 370 nm ≤ λ ≤ 380 nm or 400 nm ≤ λ ≤ 410 nm.

[0035] Further, the first lens 1, the fourth lens 4, and the fifth lens 5 are all made of flint glass material or light flint glass material, the eighth lens 8 is made of light crown glass material, the second lens 2, the third lens 3, and the sixth lens 6 are made of barium crown glass material, and the seventh lens 7 and the ninth lens 9 are made of optical quartz glass material. Specifically, each lens can select the corresponding domestic glass material, that is, the first lens 1, the fourth lens 4, and the fifth lens 5 are all made of domestic flint glass material or domestic light flint glass material, the eighth lens 8 is made of domestic light crown glass material, the second lens 2, the third lens 3, and the sixth lens 6 are made of domestic barium crown glass material, and the seventh lens 7 and the ninth lens 9 are made of domestic optical quartz glass material. Selecting domestic glass materials for each lens of the projection lithography lens in the present invention can not only ensure the full-band transmittance and double telecentric characteristics of the lens, but also reduce the cost of the projection lithography lens.

[0036] In the present invention, both the front lens group and the rear lens group adopt spherical mirrors. Each lens has an object surface side close to the object side of the double telecentric projection lithography lens and an image surface side close to the image side of the double telecentric projection lithography lens. It is defined that the convexity of the object surface side or the image surface side of each lens towards the object side is positive, and the convexity towards the image side is negative; The radius range of the object surface side of the first lens 1 is -355.214 mm < R 11 < -351.214 mm, and the radius range of the image surface side of the first lens 1 is -103.811 mm < R 12 < -100.811 mm; The radius range of the object surface side of the second lens 2 is 49.049 mm < R 21 < 55.058 mm, and the radius of the image surface side of the second lens 2 is R 22 = ∞; The radius range of the object surface side of the third lens 3 is 44.037 mm < R 31 < 48.089 mm, and the radius range of the image surface side of the third lens 3 is 154.587 mm < R 32 < 197.589 mm; The radius of the object surface side of the fourth lens 4 is R41 = ∞, the radius range on the image side of the fourth lens 4 is 20.514 < R 42 < 23.514 mm; The radius range on the object side of the fifth lens 5 is -25.520 mm < R 51 < -22.520 mm, and the radius range on the image side of the fifth lens 5 is 158.800 < R 52 < 162.800 mm; The radius range on the object side of the sixth lens 6 is -115.137 mm < R 61 < -110.140 mm, and the radius range on the image side of the sixth lens 6 is -43.594 mm < R 62 < -39.673 mm; The radius range on the object side of the seventh lens 7 is -341.352 mm < R 71 < -328.932 mm, and the radius range on the image side of the seventh lens 7 is -62.335 mm < R 72 < -59.951 mm; The radius range on the object side of the eighth lens 8 is 298.249 mm < R 81 < 730.275 mm, and the radius range on the image side of the eighth lens 8 is -44.902 mm < R 82 < -42.310 mm; The radius range on the object side of the ninth lens 9 is 76.050 mm < R 91 < 79.050 mm, and the radius range on the image side of the ninth lens 9 is -391.074 mm < R 92 < -388.074 mm.

[0037] Preferably, the front lens group satisfies the relation: -0.9 ≤ (R 51 + R 52 ) / (R 51 - R 52 ) ≤ -0.7 (3) wherein, R 51 is the curvature radius on the object side of the fifth lens 5, and R 52 is the curvature radius on the image side of the fifth lens 5; The rear lens group satisfies the relation: 0.7 ≤ (R 81 + R 82 ) / (R 81 - R 82 ) ≤ 0.9 (4) wherein, R 81is the radius of curvature of the object surface side of the eighth lens 8, R 82 is the radius of curvature of the image surface side of the eighth lens 8.

[0038] The double telecentric projection lithography lens of the present invention satisfies the relational expression (3), can reasonably control the shape of the lens, effectively correct the axial chromatic aberration problem of the system, and by satisfying the relational expression (4), reasonably control the shape of the lens, and effectively reduce aberrations such as spherical aberration of the system.

[0039] Furthermore, the design parameters of the thicknesses and air spaces of the respective lenses in the double telecentric projection lithography lens of the present invention are as follows: The range of the thickness T1 of the first lens 1 is 8.08 mm < T1 < 8.68 mm, and the range of the air space L1 between the first lens 1 and the second lens 2 is 81.4 mm < L1 < 98.4 mm; The range of the thickness T2 of the second lens 2 is 8.74 mm < T2 < 11.40 mm, and the range of the air space L2 between the second lens 2 and the third lens 3 is 0.15 mm < L2 < 6.32 mm; The range of the thickness T3 of the third lens 3 is 12.89 mm < T3 < 14.91 mm, and the range of the air space L3 between the third lens 3 and the fourth lens 4 is 0.93 mm < L3 < 1.56 mm; The range of the thickness T4 of the fourth lens 4 is 11.97 mm < T4 < 14.97 mm, and the range of the air space L4 between the fourth lens 4 and the fifth lens 5 is 26.07 mm < L4 < 29.48 mm; The range of the thickness T5 of the fifth lens 5 is 11.34 mm < T5 < 14.34 mm, and the range of the air space L5 between the fifth lens 5 and the sixth lens 6 is 1.63 mm < L5 < 2.62 mm; The range of the thickness T6 of the sixth lens 6 is 6.08 mm < T6 < 7.02 mm, and the range of the air space L6 between the sixth lens 6 and the seventh lens 7 is 0.1 mm < L6 < 0.5 mm; The range of the thickness T7 of the seventh lens 7 is 6.04 mm < T7 < 7.07 mm, and the range of the air space L7 between the seventh lens 7 and the eighth lens 8 is 0.20 mm < L7 < 4.12 mm; The range of the thickness T8 of the eighth lens 8 is 11.04 mm < T8 < 15.10 mm, and the range of the air space L8 between the eighth lens 8 and the ninth lens 9 is 26.07 mm < L8 < 47.03 mm; The thickness T9 of the ninth lens 9 ranges from 13.98 mm < T9 < 23.98 mm.

[0040] It can be understood that the thickness of each of the above lenses and the air gap between two adjacent lenses refer to the measured values on the optical axis.

[0041] Preferably, the front lens group satisfies the relational expression: 0.09 ≤ T2 / L1 ≤ 0.14 (5) wherein, T2 is the central thickness of the second lens 2, and L1 is the air gap between the first lens 1 and the second lens 2; The rear lens group satisfies the relational expression: 0.02 ≤ T8 / L ≤ 0.04 (6) wherein, T8 is the central thickness of the eighth lens 8, and L is the conjugate distance of the double telecentric projection lithography lens.

[0042] By satisfying the relational expressions (5) and (6), the projection lithography lens of the present invention helps to compress the total optical length of the optical system and reduce the thickness and volume of the projection lithography lens.

[0043] The double telecentric projection lithography lens of the present invention will be further described below through specific embodiments.

[0044] Refer to Figure 1 as shown in Figure 1 which is a schematic structural diagram of the double telecentric projection lithography lens according to Embodiment 1 of the present invention, including a front lens group, a diaphragm 20, and a rear lens group sequentially arranged from the object side to the image side. The front lens group includes, sequentially arranged from the object side to the image side: a first lens 1, which is a meniscus positive lens; a second lens 2, which is a plano-convex lens; a third lens 3, which is a meniscus positive lens; a fourth lens 4, which is a plano-concave lens; the rear lens group includes, sequentially arranged from the object side to the image side: a fifth lens 5, which is a double concave lens; a sixth lens 6 and a seventh lens 7 are both meniscus positive lenses; an eighth lens 8 and a ninth lens 9 are both double convex lenses, and an autofocus component 10 is located on the image side of the ninth lens 9.

[0045] Table 1 shows the parameters of each lens in Embodiment 1

[0046] In Table 1, R is the radius of curvature of the surface of each optical element, TH is the central thickness of each optical element, Nd is the refractive index of each optical element, and Vd is the Abbe number of each optical element. The diameter of all lenses is within 45 mm, and the materials of all optical elements used have a high transmittance at a light source wavelength of 370 nm - 410 nm.

[0047] The first lens 1 is made of domestic light flint glass material, the second lens 2, the third lens 3 and the sixth lens 6 are made of domestic barium crown glass material, the fourth lens 4 and the fifth lens 5 are both made of domestic flint glass material, the seventh lens 7, the ninth lens 9 and the autofocus lens 10 are made of domestic optical quartz glass material, and the eighth lens 8 is made of domestic light crown glass material.

[0048] In the first embodiment, the designed wavelength band is 400nm ≤ λ ≤ 410nm. After configuration according to Table 1, the dual-telecentric projection lithography lens in the first embodiment is optically tested to obtain Figures 2 - 5 test data.

[0049] Figure 2 is the defocus MTF (Modulation Transfer Function) curve graph of the dual-telecentric projection lithography lens in the first embodiment; from Figure 2 it can be seen that both the field curvature and astigmatism at the evaluation frequency of 250 lp / mm are within 1μm.

[0050] Figure 3 is the field curvature / distortion graph of the dual-telecentric projection lithography lens in the first embodiment. The correction of the fine beam field curvature is within 10μm, meeting the design requirements. Although the distortion does not affect the imaging quality, the magnitude of the distortion affects the imaging accuracy. Through correction, the distortion of the optical system is controlled below 0.1μm, and the field curvature aberration is controlled within the range of -10μm to 10μm.

[0051] Figure 4 is the MTF graph of the dual-telecentric projection lithography lens in the first embodiment; from Figure 4 it can be seen that the MTF value of the system at 250 lp / mm is relatively close to the diffraction limit.

[0052] Figure 5 is the spot diagram of the dual-telecentric projection lithography lens in the first embodiment; from Figure 5 it can be seen that this optical system controls the spot radius below 1μm under different fields of view in the narrow wavelength band.

[0053] The effective field of view on the image side of the dual-telecentric projection lithography lens is Φ48mm, and the numerical aperture on the image side is 0.16. The dual-telecentric projection lithography lens forms a dual-telecentric optical system with reduced imaging, and the reduction ratio is set to M = -0.50X. The negative sign here indicates inverted imaging. The lens diameter D of the dual-telecentric projection lithography lens is ≤ 45mm, making the projection lithography lens of the present invention miniaturized.

[0054] The dual telecentric projection lithography lens of this embodiment forms an afocal system, which has a simple structure, a small size, good processing performance and low cost, and excellent imaging performance. Under long-term irradiation with a laser with a laser wavelength of 400 nm ~ 410nm and a laser light power of about 100W, the optimal focal plane position of the exposure surface changes with temperature by ≤3μm / ℃.

[0055] See also Figure 6 As shown, Figure 6 The present invention is a schematic structural diagram of a dual telecentric projection lithography lens according to a second embodiment of the present invention, comprising a front lens group, an aperture and a rear lens group arranged in sequence from the object side to the image side, wherein the front lens group comprises the following arranged in sequence from the object side to the image side: a first lens, which is a meniscus positive lens; a second lens, which is a plano-convex lens; a third lens, which is a meniscus positive lens; and a fourth lens, which is a plano-concave lens; the rear lens group comprises the following arranged in sequence from the object side to the image side: a fifth lens, which is a biconcave lens; the sixth lens and the seventh lens are both meniscus positive lenses; the eighth lens and the ninth lens are both biconvex lenses, and an autofocus assembly 10 located on the image side of the ninth lens.

[0056] Table 2 shows the lens parameters of Example 2

[0057] In Table 2, R is the radius of curvature of the surface of each optical element, TH is the center thickness of each optical element, Nd is the refractive index of each optical element, and Vd is the Abbe constant of each optical element. The diameter of all lenses is within 45mm, and the materials used in all optical elements have a high transmittance at a wavelength of 370nm-410nm.

[0058] The material selection of each lens in Example 2 is the same as that in Example 1, except that the applicable wavelength range of the lens is 370nm≤λ≤380nm. After configuration according to Table 2, the dual telecentric projection lithography lens in Example 2 is optically tested, and the results are as follows: Figures 6 - 9 Test data.

[0059] Figure 7 is a defocus MTF (Modulation Transfer Function) curve of the dual telecentric projection lithography lens in Example 2; Figure 7 It can be seen that the field curvature and astigmatism at the test frequency of 250lp / mm are both within 1μm.

[0060] Figure 8It is the field curvature / distortion diagram of the double telecentric projection lithography lens in Embodiment 2. The correction of the fine beam field curvature is within 10 μm, meeting the design requirements. Although the distortion does not affect the imaging quality, the magnitude of the distortion affects the imaging accuracy. Through correction, the distortion of the optical system is controlled below 0.1 μm, and the field curvature aberration is controlled within the range of -10 μm to 10 μm.

[0061] Figure 9 It is the MTF diagram of the double telecentric projection lithography lens in Embodiment 2; from Figure 9 it can be seen that the MTF value of the system at 250 lp / mm is relatively close to the diffraction limit.

[0062] Figure 10 It is the spot diagram of the double telecentric projection lithography lens in Embodiment 2; from Figure 10 it can be seen that this optical system controls the spot radius below 1 μm under different fields of view in the narrow wavelength band.

[0063] The effective field of view on the image side of the double telecentric projection lithography lens is Φ48 mm, and the numerical aperture on the image side is 0.16. The double telecentric projection lithography lens forms a double telecentric optical system with reduced imaging, and the reduction ratio is set as M = -0.50X. The negative sign here indicates inverted imaging. The lens diameter D of the double telecentric projection lithography lens is ≤45 mm, making the projection lithography lens of the present invention miniaturized.

[0064] The double telecentric projection lithography lens of this embodiment forms an afocal system, which has a simple structure, a small volume, good processing performance and low cost, and excellent imaging performance. Under the long-term irradiation of a laser with a laser wavelength of 370 nm to 380 nm and a laser power of about 100 W, the change of the best focal plane position on the exposure surface with temperature is ≤3 μm / °C.

[0065] In summary, the double telecentric projection lithography lens of the present invention can ensure the high transmittance of the full wavelength band and the double telecentric characteristics of the lens within two ultraviolet narrow wavelength bands of 370 nm to 380 nm or 400 nm to 410 nm, and can achieve high resolution, high power, miniaturization and excellent temperature drift performance of the projection lithography lens, and can realize the exposure and resolution of 2-μm linewidth ink. Moreover, the tolerance distribution of the projection lithography lens of the present invention is more reasonable, the processing and assembly difficulty is greatly reduced, and the mass production difficulty is also greatly reduced, thereby improving the production efficiency of the lens.

[0066] In addition, for the double telecentric projection lithography lens of the present invention application, both the object-side telecentricity and the image-side telecentricity can meet the standards of general telecentric lenses and have an extremely high level of telecentricity. The telecentricity is less than 0.1 degree, the depth of field is large, the magnification of the image can be kept consistent within a certain object distance range, and the extremely small distortion greatly reduces the image distortion, further improving its detection accuracy, and it can be fully applied to the future industrial inspection field.

[0067] On the other hand, the present invention also provides a direct-write lithography apparatus, which is provided with a double telecentric projection lithography lens. The specific structure of the double telecentric projection lithography lens is as described above and will not be elaborated here. The direct-write lithography apparatus of the present invention can achieve high power, miniaturization and excellent temperature drift performance of the projection lens, can achieve exposure resolution of inks with a line width of 2 μm, and effectively improve the production capacity of the LDI lithography apparatus.

[0068] As mentioned above, the above are only the preferred specific embodiments of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered within the protection scope of the present invention.

Claims

1. A dual-telecentric projection lithography lens for the ultraviolet narrow band, comprising a front lens group, a diaphragm, and a rear lens group sequentially arranged from the object side to the image side, characterized in that the front lens group includes, sequentially arranged from the object side to the image side: a first lens, which is a meniscus positive lens; a second lens, which is a plano-convex lens; a third lens, which is a meniscus positive lens; a fourth lens, which is a plano-concave lens; the rear lens group includes, sequentially arranged from the object side to the image side: a fifth lens, which is a biconcave lens; a sixth lens and a seventh lens are both meniscus positive lenses; an eighth lens and a ninth lens are both biconvex lenses.

2. The dual-telecentric projection lithography lens according to claim 1, wherein The dual-telecentric projection lithography lens further includes an auto-focusing component disposed on the side of the ninth lens close to the image side, and the auto-focusing component includes two wedge prisms, and the distance between the two wedge prisms is adjustable.

3. The dual-telecentric projection lithography lens according to claim 1, characterized in that The focal length F1 of the front lens group ranges from 98.871 mm ≤ F1 ≤ 110.224 mm; the focal length F2 of the rear lens group ranges from 48.731 mm ≤ F2 ≤ 55.369 mm; the focal length F of the dual-telecentric projection lithography lens ranges from 1548.19 mm ≤ F ≤ 1681.98 mm; the conjugate distance L of the dual-telecentric projection lithography lens ranges from 418.4 mm ≤ L ≤ 448.1 mm.

4. The dual-telecentric projection lithography lens according to claim 1, wherein The dual-telecentric projection lithography lens satisfies the relational expression: -14.7 ≤ (f1 + f2 + f3 + f6 + f7 + f8 + f9) / (f4 + f5) ≤ -14.5 4.5 ≤ f1 / F1 + f9 / F2 ≤ 5.5 wherein, f1 is the focal length of the first lens, f2 is the focal length of the second lens, f3 is the focal length of the third lens, f4 is the focal length of the fourth lens, f5 is the focal length of the fifth lens, f6 is the focal length of the sixth lens, f7 is the focal length of the seventh lens, f8 is the focal length of the eighth lens, f9 is the focal length of the ninth lens, F1 is the focal length of the front lens group, and F2 is the focal length of the rear lens group.

5. The dual-telecentric projection lithography lens according to claim 1, characterized in that, The distance between the side of the first lens close to the object side and the object side is 92.02 mm to 93.26 mm, and the distance between the side of the ninth lens close to the image side and the image side is 70.60 mm to 78.23 mm; the wavelength range of the dual-telecentric projection lithography lens is 370 nm ≤ λ ≤ 380 nm or 400 nm ≤ λ ≤ 410 nm.

6. The dual-telecentric projection lithography lens according to claim 1, wherein The first lens, the fourth lens, and the fifth lens are all made of flint glass material or light flint glass material, the eighth lens is made of light crown glass material, the second lens, the third lens, and the sixth lens are made of barium crown glass material, and the seventh lens and the ninth lens are made of optical quartz glass material.

7. The dual-telecentric projection lithography lens according to claim 1, wherein Both the front lens group and the rear lens group adopt spherical mirrors, and it is defined that the convex side of the object side or the image side of each lens towards the object side is positive, and the convex side towards the image side is negative; The radius range of the object surface side of the first lens is -355.214 mm < R 11 < -351.214 mm, and the radius range of the image surface side of the first lens is -103.811 mm < R 12 < -100.811 mm; The radius range of the object surface side of the second lens is 49.049 mm < R 21 < 55.058 mm, and the radius of the image surface side of the second lens is R 22 = ∞; The radius range on the object surface side of the third lens is 44.037 mm < R 31 < 48.089 mm, and the radius range on the image surface side of the third lens is 154.587 mm < R 32 < 197.589 mm; The radius of the object surface side of the fourth lens is R 41 = ∞, and the radius range of the image surface side of the fourth lens is 20.514 < R 42 < 23.514 mm; The radius range of the object surface side of the fifth lens is -25.520mm < R 51 < -22.520mm, and the radius range of the image surface side of the fifth lens is 158.800 < R 52 < 162.800mm; The radius range of the object surface side of the sixth lens is -115.137 mm < R 61 < -110.140 mm, and the radius range of the image surface side of the sixth lens is -43.594 mm < R 62 < -39.673 mm; The radius range on the object side of the seventh lens is -341.352 mm < R 71 < -328.932 mm, and the radius range on the image side of the seventh lens is -62.335 mm < R 72 < -59.951 mm; The radius range on the object side of the eighth lens is 298.249 mm < R 81 < 730.275 mm, and the radius range on the image side of the eighth lens is -44.902 mm < R 82 < -42.310 mm; The radius range of the object surface side of the ninth lens is 76.050 mm < R 91 < 79.050 mm, and the radius range of the image surface side of the ninth lens is -391.074 mm < R 92 < -388.074 mm.

8. The dual-telecentric projection lithography lens according to claim 7, wherein The front lens group satisfies the relational expression: -0.9 ≤ (R 51 + R 52 ) / (R 51 - R 52 ) ≤ -0.7 wherein, R 51 is the radius of curvature on the object surface side of the fifth lens, and R 52 is the radius of curvature on the image surface side of the fifth lens; The rear lens group satisfies the relational expression: 0.7 ≤ (R 81 + R 82 ) / (R 81 - R 82 ) ≤ 0.9 wherein, R 81 is the radius of curvature of the object surface side of the eighth lens, and R 82 is the radius of curvature of the image surface side of the eighth lens.

9. The dual-telecentric projection lithography lens according to claim 1, wherein The thickness T1 of the first lens ranges from 8.08 mm < T1 < 8.68 mm, and the air gap L1 between the first lens and the second lens ranges from 81.4 mm < L1 < 98.4 mm; The thickness T2 of the second lens ranges from 8.74 mm < T2 < 11.40 mm, and the air gap L2 between the second lens and the third lens ranges from 0.15 mm < L2 < 6.32 mm; The thickness T3 of the third lens ranges from 12.89 mm < T3 < 14.91 mm, and the air gap L3 between the third lens and the fourth lens ranges from 0.93 mm < L3 < 1.56 mm; The thickness T4 of the fourth lens ranges from 11.97 mm < T4 < 14.97 mm, and the air gap L4 between the fourth lens and the fifth lens ranges from 26.07 mm < L4 < 29.48 mm; The thickness T5 of the fifth lens ranges from 11.34 mm < T5 < 14.34 mm, and the air gap L5 between the fifth lens and the sixth lens ranges from 1.63 mm < L5 < 2.62 mm; The thickness T6 of the sixth lens ranges from 6.08 mm < T6 < 7.02 mm, and the air gap L6 between the sixth lens and the seventh lens ranges from 0.1 mm < L6 < 0.5 mm; The thickness T7 of the seventh lens ranges from 6.04 mm < T7 < 7.07 mm, and the air gap L7 between the seventh lens and the eighth lens ranges from 0.20 mm < L7 < 4.12 mm; The thickness T8 of the eighth lens ranges from 11.04 mm < T8 < 15.10 mm, and the air gap L8 between the eighth lens and the ninth lens ranges from 26.07 mm < L8 < 47.03 mm; The thickness T9 of the ninth lens ranges from 13.98 mm < T9 < 23.98 mm.

10. The dual-telecentric projection lithography lens according to claim 9, wherein, The front lens group satisfies the relationship: 0.09 ≤ T2 / L1 ≤ 0.14 wherein, T2 is the central thickness of the second lens, and L1 is the air gap between the first lens and the second lens; The rear lens group satisfies the relationship: 0.02 ≤ T8 / L ≤ 0.04 wherein, T8 is the central thickness of the eighth lens, and L is the conjugate distance of the double telecentric projection lithography lens.

11. The dual-telecentric projection lithography lens according to claim 1, wherein The effective field of view on the image side of the double telecentric projection lithography lens is Φ48 mm, the numerical aperture on the image side is 0.

16. The double telecentric projection lithography lens forms a double telecentric optical system with reduced imaging, and the reduction ratio is set to M = -0.50X. The lens diameter D of the double telecentric projection lithography lens ≤ 45 mm.

12. A direct writing lithography device, characterized in that: Comprising the double telecentric projection lithography lens according to any one of claims 1 - 11.

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