Radio frequency power output circuit and semiconductor process apparatus

Abstract

The application discloses a radio frequency power output circuit and a semiconductor process equipment, relates to the technical field of semiconductors, and can improve the low chamber matching degree caused by the difference of a radio frequency system, thereby improving film performance. The radio frequency power output circuit comprises a radio frequency power supply module, a power distribution module and a plurality of process chambers. The radio frequency power supply module comprises a first radio frequency power supply and a second radio frequency power supply. The power distribution module comprises a first input end, a second input end and a plurality of output ends corresponding to the plurality of process chambers one by one. The first input end is electrically connected with the first radio frequency power supply, the second input end is electrically connected with the second radio frequency power supply, and each output end is used for being electrically connected with a corresponding process chamber. The power distribution module is used for evenly distributing the energy of a first radio frequency signal received by the first input end and / or the energy of a second radio frequency signal received by the second input end to each process chamber.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a radio frequency power output circuit and semiconductor process equipment. Background Technology

[0002] As the critical dimension (CD) of components continues to decrease, PEALD (Plasma Enhanced Atomic Layer Deposition) technology, as a process method for depositing semiconductor thin films with good uniformity, is crucial in processes below 28nm. Compared with Physical Vapor Deposition (PVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD), PEALD-deposited films exhibit good conformality, precise thickness control, and excellent filling capability for high aspect ratio patterns. Furthermore, the lower processing temperature of PEALD facilitates process integration. However, the slow reaction speeds of various ALD (atomic layer deposition) methods, such as thermal ALD and PEALD, result in low throughput, limiting their application in mass production within the integrated circuit industry.

[0003] To increase throughput, PEALD multi-wafer chambers, including batch-type, twin-chamber, and quadruple-chamber designs, are widely used in the fabrication of oxides (e.g., SiO2). During the fabrication process, multiple wafers can be placed simultaneously within the chamber, completing the deposition process in a single operation. Compared to single-wafer processes, this saves wafer transfer time and significantly increases throughput.

[0004] With the continuous advancement of semiconductor technology, multi-wafer processing systems (MWMS) are placing increasingly stringent demands on thin film performance (e.g., thickness uniformity, density, stress) in addition to meeting production capacity requirements. Due to process limitations, the radio frequency systems in different chambers differ, affecting the matching degree of the deposited thin films in each chamber and consequently the performance of the deposited thin films. Summary of the Invention

[0005] Embodiments of this application provide a radio frequency power output circuit and semiconductor process equipment that can improve the problem of low chamber matching caused by differences in radio frequency systems, thereby improving thin film performance.

[0006] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:

[0007] On one hand, embodiments of this application provide a radio frequency power output circuit applied to semiconductor process equipment, the semiconductor process equipment including: multiple independent process chambers;

[0008] The radio frequency power output circuit includes:

[0009] The radio frequency power supply module includes a first radio frequency power supply and a second radio frequency power supply. The first radio frequency power supply is used to output a first radio frequency signal, and the second radio frequency power supply is used to output a second radio frequency signal. The frequency value of the first radio frequency signal is greater than the frequency value of the second radio frequency signal.

[0010] The power distribution module includes a first input terminal, a second input terminal, and multiple output terminals corresponding one-to-one with the multiple process chambers; the first input terminal is electrically connected to the first RF power supply and is used to receive the first RF signal output by the first RF power supply; the second input terminal is electrically connected to the second RF power supply and is used to receive the second RF signal output by the second RF power supply; each of the output terminals is used to be electrically connected to the corresponding process chamber; the power distribution module is used to evenly distribute the energy of the first RF signal received by the first input terminal and / or the energy of the second RF signal received by the second input terminal to each of the process chambers.

[0011] Optionally, the power distribution module includes multiple power distribution units, and the multiple power distribution units correspond one-to-one with the multiple process chambers;

[0012] The power distribution unit includes a first filter circuit and a second filter circuit;

[0013] The input terminal of the first filter circuit is electrically connected to the first radio frequency power supply, and the output terminal is electrically connected to the corresponding process chamber; the first filter circuit is used to isolate signals other than the first radio frequency signal.

[0014] The input terminal of the second filter circuit is electrically connected to the second RF power supply, and the output terminal is electrically connected to the output terminal of the first filter circuit; the second filter circuit is used to isolate signals other than the second RF signal.

[0015] Optionally, the power distribution unit further includes a balancing circuit, which is disposed between the output terminal of the first filter circuit and the process chamber, and is used to change the resonant point of the circuit to avoid series resonance.

[0016] Optionally, the first filter circuit includes a fifth capacitor, the second filter circuit includes a sixth capacitor and a third inductor connected in parallel, and the balancing circuit includes a fourth inductor.

[0017] Wherein, the first end of the fifth capacitor is electrically connected to the first node, the first end of the sixth capacitor and the first end of the third inductor are both electrically connected to the second node, the second end of the fifth capacitor, the second end of the sixth capacitor and the second end of the third inductor are all electrically connected to the first end of the fourth inductor, and the second end of the fourth inductor is electrically connected to the corresponding third node.

[0018] Optionally, the inductance value of the fourth inductor is less than the inductance value of the third inductor.

[0019] Optionally, the second power distribution subunit further includes an isolation circuit;

[0020] The input terminal of the isolation circuit is electrically connected to the input terminal of the second filter circuit, and the output terminal of the isolation circuit is grounded; the isolation circuit is used to isolate the first radio frequency signal flowing from the first filter circuit to the second filter circuit.

[0021] Optionally, the isolation circuit includes a seventh capacitor;

[0022] The first terminal of the seventh capacitor is electrically connected to the first terminal of the sixth capacitor, and the second terminal of the seventh capacitor is grounded.

[0023] Optionally, the radio frequency power output circuit further includes multiple power compensation units; the multiple power compensation units and the multiple power distribution units correspond one-to-one.

[0024] The input terminal of the power compensation unit is electrically connected to the output terminal of the corresponding power distribution unit, and the output terminal of the power compensation unit is used to be electrically connected to the corresponding process chamber; each power compensation unit is used to adjust the impedance value so that the power of the radio frequency signal output by each power compensation unit to the corresponding process chamber is the same.

[0025] Optionally, the power compensation unit includes a first variable capacitor and a second variable capacitor connected in parallel;

[0026] The first terminal of the first variable capacitor and the first terminal of the second variable capacitor are both electrically connected to the output terminal of the corresponding power distribution unit. The second terminals of the first variable capacitor and the second terminal of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber.

[0027] The power distribution unit outputs a signal including a first signal and a second signal, wherein the frequency of the first signal is greater than the frequency of the second signal;

[0028] The first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

[0029] Optionally, the frequency range of the first radio frequency signal includes 10MHz to 100MHz, and the frequency range of the second radio frequency signal includes 300KHz to 500KHz.

[0030] Optionally, the radio frequency power output circuit further includes: a first radio frequency matching circuit and a second radio frequency matching circuit;

[0031] The input terminal of the first RF matching circuit is electrically connected to the output terminal of the first RF power supply, and the output terminal of the first RF matching circuit is electrically connected to the first input terminal of the power distribution module.

[0032] The input terminal of the second RF matching circuit is electrically connected to the output terminal of the second RF power supply, and the output terminal of the second RF matching circuit is electrically connected to the second input terminal of the power distribution module.

[0033] Optionally, the first radio frequency matching circuit includes a first capacitor, a second capacitor, and a first inductor;

[0034] Wherein, the first end of the first capacitor and the first end of the second capacitor are both electrically connected to the output end of the first RF power supply, the second end of the first capacitor is grounded, the second end of the second capacitor is electrically connected to the first end of the first inductor, and the second end of the first inductor is electrically connected to the first input end of the power distribution module;

[0035] The second RF matching circuit includes a third capacitor, a fourth capacitor, and a second inductor;

[0036] The first end of the third capacitor and the first end of the second inductor are both electrically connected to the output terminal of the second RF power supply, the second end of the third capacitor is grounded, the second end of the second inductor and the first end of the fourth capacitor are both electrically connected to the second input terminal of the power distribution module, and the second end of the fourth capacitor is grounded.

[0037] On the other hand, embodiments of this application provide a semiconductor process apparatus including multiple independent process chambers and the aforementioned radio frequency power output circuit;

[0038] The process chamber includes a chamber body and an upper electrode assembly and a lower electrode assembly located within the chamber body and disposed opposite to each other;

[0039] Each output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

[0040] Optionally, the upper electrode assembly includes a cavity cover and a flow equalization structure, the flow equalization structure being fixed to one side of the cavity cover, and the cavity cover including an air inlet block;

[0041] The process chamber further includes an annular insulation layer, an annular heating band, and multiple heating rods disposed on the side of the chamber cover away from the uniform flow structure; the inner ring of the annular insulation layer is used to expose the air inlet block of the chamber cover; the multiple heating rods are arranged around the annular insulation layer, with a portion of the heating rods disposed inside the chamber cover and the remaining portion protruding from the upper surface of the chamber cover; the annular heating band is arranged around the multiple heating rods.

[0042] This application provides an RF power output circuit and a semiconductor process equipment. When the RF power output circuit is applied in the semiconductor process equipment, the first RF signal output by the first RF power supply and / or the second RF signal output by the second RF power supply can be evenly distributed to each process cavity after passing through the power distribution module. This improves the problem of low cavity matching caused by differences in the RF system, thereby improving the thin film performance.

[0043] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description

[0044] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0045] Figure 1 A schematic diagram of a dual-cavity PEALD provided for the present technology;

[0046] Figure 2 A schematic diagram of a cavity radio frequency feed structure provided for the prior art;

[0047] Figure 3 This is a schematic diagram of the structure of a radio frequency power output circuit provided in an embodiment of this application;

[0048] Figure 4 This is a schematic diagram of another radio frequency power output circuit provided in an embodiment of this application;

[0049] Figure 5 This is a schematic diagram of the structure of a semiconductor process equipment provided in an embodiment of this application;

[0050] Figure 6 A schematic diagram of the structure of a heating block for a chamber cover plate provided in the prior art;

[0051] Figure 7 To adopt Figure 6 The heating curve of the heating block is shown below;

[0052] Figure 8 This is a schematic diagram of the structure of an annular heating belt and heating rod provided in an embodiment of this application;

[0053] Figure 9 for Figure 8 Top view;

[0054] Figure 10 A schematic diagram of a heating rod and cavity cover provided in an embodiment of this application;

[0055] Figure 11 This is a schematic diagram of another heating rod and cavity cover provided in an embodiment of this application;

[0056] Figure 12 To adopt Figure 8 The diagram shows the temperature rise curves of the annular heating belt and heating rod. Detailed Implementation

[0057] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0058] In the embodiments of this application, the terms "first" and "second" are used to distinguish identical or similar items with essentially the same function and effect, only for the purpose of clearly describing the technical solution of the embodiments of this application, and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated.

[0059] In the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined. In the description of this application, it should be understood that the terms "upper," "lower," "front," "back," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0060] In existing technologies, the PEALD dual-cavity structure can be referenced. Figure 1 As shown, RC1 and RC2 are two physically isolated independent chambers. The gas panel above chambers RC1 and RC2... Figure 1 (Not shown) The process gas (Gas) flowing out is separated by pipelines and flows into the chambers of RC1 and RC2 through their respective gas distribution devices (labeled 1 and 2, respectively). This PEALD dual-chamber structure also includes two independent RF power supplies S1 and S2, and two independent RF matching controllers Match1 and Match2. After RF matching, the gas enters RC1 and RC2 respectively for process ignition. RC1 and RC2 can generate RF plasma simultaneously or sequentially. The heating bases of RC1 and RC2 are labeled 3 and 4, respectively, and the wafers on the heating bases of RC1 and RC2 are labeled 5 and 6, respectively. The fore line 1 of RC1 and RC2... Figure 1 (Unmarked) and Fore line 2 ( Figure 1Each chamber (not marked) is equipped with isolation valves IV1 and IV2, and butterfly valves TV1 and TV2 that control the chamber pressure by different opening and closing angles. This structure can achieve physical isolation between RC1 and RC2, while also independently controlling the exhaust speed of RC1 and RC2 and adjusting the process pressure of RC1 and RC2 separately. The inlet blocks (i.e., inlet blocks) at the intersection of the process gas of RC1 and RC2 and the cleaning gas of RPS (Remote Plasma System) (generally NF3) are marked as 7 and 8, respectively. Isolation valves IV3 and IV4 with independent switches are installed between RPS and the inlet blocks. When the film in chambers RC1 and RC2 accumulates to a certain thickness and needs to be cleaned, the cleaning gas NF3 flows out from RPS and flows directly to RC1 and RC2 through two pipelines, respectively, realizing independent cleaning of chambers RC1 and RC2. Figure 1 In the middle, the air intake structure also includes source bottle 9, and MFC stands for flow controller.

[0061] The RF feed structure of one chamber in the PEALD dual-cavity system can be referenced. Figure 2 As shown, Figure 2 In this process, the process gas enters the chamber from the inlet block 7 through the chamber lid 8 and showerhead 9. The RF generator operates at a high frequency of 13.56MHz. Its output RF power first passes through the cable to the RF matcher, and then through the RF copper strip 12 to the upper electrode of the chamber. Figure 2 The chamber lid 8 is shown, and the lower electrode heater 11 is grounded. After the radio frequency signal is fed in from the copper strip, plasma 10 is generated between the upper and lower electrodes. In this radio frequency system, the chamber lid serves as the upper electrode connected to the radio frequency, and the heater serves as the other electrode grounded. Figure 2 In the middle, the upper heating block is marked as 13, the ceramic insulating isolation block is marked as 14, and the chamber wall is marked as 15.

[0062] In existing dual-chamber PEALDs, such as Figure 1 The RC1 and RC2 shown are configured with two RF power supplies, S1 and S2. During the process, the RF energy is controlled by adjusting the RF setting power of each of the RC1 and RC2 RF power supplies; that is, the RF input power (i.e., forward power, Psetting) is set in the process run menu (recipe). This power is the initial output power of the RF power supply (RF Generator). This output power passes through the respective RF matching circuits of RC1 and RC2 (i.e., S1 and S2). Figure 1 The Match1 and Match2 shown are adjusted so that the reflected power (Preflected) is lower than the set specification, for example: Preflected < 1% × Psetting, in order to achieve the same feed power for RC1 and RC2.

[0063] Compared to single-chamber PEALD processes, multi-chamber (e.g., dual-chamber or quad-chamber) PEALD processes suffer from mismatches between multiple chambers. This mismatch manifests in inconsistent film properties between the deposited wafers from different chambers. For example, the WER, thickness, and stress of the films deposited in different chambers may differ, exceeding the specification range and directly impacting the film's application. This is particularly true for applications such as 28nm spacers, double-pattern (below 28nm) and liner applications, where the matching between chambers is extremely stringent. Taking a dual-chamber PEALD system as an example, to form a SiO2 film (TSV liner) for advanced packaging layers with a target thickness of 6000 nm, the average deposition thickness per ALD cycle is approximately 0.7 nm. The difference in SiO2 thickness between the two wafers deposited simultaneously in the two chambers must be less than 120 nm, and the average difference in deposition thickness per ALD cycle between the two chambers must be <0.01 nm. While the thickness difference can be reduced to a certain extent by adjusting the cycle number of the two chambers, this undoubtedly places high demands on the matching between the chambers. Differences in the gas delivery system, temperature control system, and RF generation and transmission system of the two chambers can all affect the matching degree. Furthermore, the stress requirement for the aforementioned TSV liner film is generally -250±50 MPa. In addition to strictly meeting the film performance requirements, the manufacturing of each piece of equipment also needs to reduce manufacturing costs, operating costs (CoO), and consumable costs (CoC).

[0064] Furthermore, with increasing demands on equipment manufacturing costs, the existing PEALD dual-cavity design, employing two RF power supplies and two matching control systems, faces significant cost pressures. Simultaneously, current equipment lacks effective methods for adjusting thin film performance (especially thin film stress). For example, the stress required for a 6000 TSV liner (three-dimensional through-silicon via deposition of silicon dioxide protective layer) is typically -250±50 MPa. Adjusting gas flow rate and process pressure has limited effectiveness. While increasing RF power can alter thin film stress, the improvement is limited and can lead to deterioration in properties such as thickness uniformity and in-film particle count.

[0065] Based on the above, embodiments of this application provide a radio frequency power output circuit applied to semiconductor process equipment, the semiconductor process equipment including: multiple independent process chambers.

[0066] refer to Figure 3 As shown, the RF power output circuit includes: an RF power supply module 20 and a power distribution module 22. Wherein:

[0067] The radio frequency power module 20 includes a first radio frequency power supply 201 and a second radio frequency power supply 202. The first radio frequency power supply is used to output a first radio frequency signal, and the second radio frequency power supply is used to output a second radio frequency signal. The frequency value of the first radio frequency signal is greater than the frequency value of the second radio frequency signal.

[0068] The power distribution module 22 includes a first input terminal, a second input terminal, and multiple output terminals corresponding to multiple process chambers. The first input terminal is electrically connected to a first RF power supply and is used to receive a first RF signal output by the first RF power supply. The second input terminal is electrically connected to a second RF power supply and is used to receive a second RF signal output by the second RF power supply. Each output terminal is used to be electrically connected to a corresponding process chamber. The power distribution module is used to evenly distribute the energy of the first RF signal received by the first input terminal and / or the energy of the second RF signal received by the second input terminal to each process chamber.

[0069] In practical implementation, in the aforementioned RF power supply module, the first RF power supply is a high-frequency RF power supply, and the second RF power supply is a low-frequency RF power supply. This application does not limit the frequency values ​​of the first and second RF signals. For example, the frequency value of the first RF signal can be 13.56MHz, and the frequency value of the second RF signal can be 400KHz. Similarly, this application does not limit the specific structure or power value of the first and second RF power supplies. Since the output frequency of the first RF power supply is higher, the power is correspondingly higher. For example, the power value range of the first RF power supply is set between 1500W and 5000W, preferably between 3000W and 5000W; the power value range of the second RF power supply is set between 100W and 1000W, preferably between 500W and 1000W.

[0070] This application does not limit the specific structure of the power distribution module described above, and the number of its output terminals is the same as the number of process chambers. If there are two process chambers, the above-mentioned RF power output circuit is applied in a dual-cavity semiconductor process equipment. In this case, the power distribution module includes two output terminals and can be called a Twin-Chamber Power Distribution System (TCPD). It is used to evenly distribute the energy of the first RF signal output from the first RF matching circuit and / or the energy of the second RF signal output from the second RF matching circuit to the two process chambers, while ensuring that the two different frequencies of energy do not interfere with each other. Of course, the number of process chambers can also be three, four, or more, and the output terminals of the power distribution module in the RF power output circuit can be three, four, or more accordingly. It should be noted that the power distribution module mainly realizes the even distribution of the energy of the RF signal received by the first input terminal and the energy of the RF signal received by the second input terminal to each process chamber. When only the first input terminal receives the RF signal, the power distribution module evenly distributes the energy of the RF signal received by the first input terminal to each process chamber. When only the second input terminal receives an RF signal, the power distribution module distributes the energy of the RF signal received at the second input terminal evenly to each process chamber. When both the first and second input terminals receive RF signals, the power distribution module distributes the energy of the RF signal received at the first input terminal and the energy of the RF signal received at the second input terminal evenly to each process chamber.

[0071] Therefore, the power distribution module described above is used to evenly distribute the energy of the first radio frequency signal received at the first input terminal and / or the energy of the second radio frequency signal received at the second input terminal to each of the process chambers, including the following cases:

[0072] In the first scenario, where only the first RF power supply in the RF power module outputs the first RF signal and the second RF power supply does not output the second RF signal, the power distribution module is used to evenly distribute the energy of the first RF signal received at the first input terminal to each process chamber.

[0073] In the second scenario, where only the second RF power supply in the RF power module outputs the second RF signal and the first RF power supply does not output the first RF signal, the power distribution module is used to evenly distribute the energy of the second RF signal received at the second input terminal to each process chamber.

[0074] In the third case, where the first RF power supply in the RF power module outputs a first RF signal and the second RF power supply outputs a second RF signal, the power distribution module is used to evenly distribute the energy of the first RF signal received at the first input terminal and the energy of the second RF signal received at the second input terminal to each process chamber.

[0075] This application provides an RF power output circuit and a semiconductor process equipment. When the RF power output circuit is applied in the semiconductor process equipment, the first RF signal output by the first RF power supply and / or the second RF signal output by the second RF power supply can be evenly distributed to each process cavity after passing through the power distribution module. This improves the problem of low cavity matching caused by differences in the RF system, thereby improving the thin film performance.

[0076] In addition, the RF power output circuit provided in this application uses two RF power supplies with different frequency values, namely the first RF power supply 201 and the second RF power supply 202. This not only enables the use of one of the RF power supplies individually, but also allows the two RF power supplies to be combined to achieve a better debugging method.

[0077] For example, there is the problem mentioned earlier regarding the lack of means to adjust thin film performance (especially thin film stress) in existing equipment. Existing technologies have limited effectiveness in adjusting gas flow rate, process pressure, etc. Although increasing the RF power supply can change the thin film stress, the improvement is limited and it can lead to a deterioration in properties such as thickness uniformity and in-film particles.

[0078] In this application, when it is necessary to optimize and adjust the thin film stress, the first RF power supply in the RF power module outputs a first RF signal, and the second RF power supply outputs a second RF signal. The power distribution module then evenly distributes the energy of the first RF signal received at the first input terminal and the energy of the second RF signal received at the second input terminal to each process chamber, that is, evenly distributes the energy of two different frequencies to each process chamber. By adjusting the power of the second RF power supply (i.e., adjusting the low-frequency energy fed into the process chamber), the thin film stress can be adjusted without adjusting the power of the first RF power supply. This ensures that the thin film stress performance is improved without reducing the thickness uniformity and thin film particle properties, thereby improving the thin film quality.

[0079] Therefore, the RF power output circuit provided in this application embodiment can adjust film properties such as thin film stress, wet etching rate, thickness uniformity, and thin film particles by adjusting the power of the first RF power supply and / or the power of the second RF power supply. Compared with the prior art method of adjusting the power of the high-frequency RF power supply to adjust film properties, the RF power output circuit provided in this application embodiment adds process debugging means, which can significantly improve film quality. In addition, the RF power output circuit provided in this application embodiment only sets one high-frequency first RF power supply and one low-frequency second RF power supply, and all chambers share the first RF power supply and the second RF power supply. Compared with the prior art structure that uses one high-frequency power supply for each chamber, the RF power output circuit provided in this application embodiment saves the number of high-frequency power supplies, thereby reducing equipment costs.

[0080] The following comparison uses a dual-cavity PEALD device as an example to compare the application of existing technologies with that of this application. In the process of depositing SiO2 for TSV liner using a PEALD device, existing technologies employ two identical high-frequency RF power supplies (typically with an output RF signal frequency of 13.56MHz) to feed RF signals into the dual cavities. In adjusting the film stress, the flow rates of the precursor gas (e.g., source SAM24) and the reactant gas (e.g., O2) have almost no effect on stress regulation. Increasing the high-frequency RF power, for example from 500W to 1000W, can partially adjust the stress, for example, reducing it from 200MPa to 0MPa. However, the stress requirement for a typical TSV liner process is -280±50MPa, and the adjustable range differs significantly from the requirement. To meet the stress requirement, the high-frequency RF power needs to be increased again; however, this leads to a deterioration in properties such as thickness uniformity and film particle size. In this application, two radio frequency (RF) power supplies with different output frequencies (e.g., 13.56MHz and 400kHz) are used. The RF energy fed into each chamber includes high-frequency (HF) RF energy and low-frequency (LF) RF energy. The high-frequency energy is used to adjust properties such as thickness uniformity and film particle size, while the low-frequency energy is used to adjust film stress. By adjusting the output power of the second RF power supply, the stress requirements of the TSV liner can be met without adjusting the output power of the first RF power supply. By adjusting the RF energy, especially the low-frequency energy, the adjustment window for film stress can be significantly expanded, thereby enabling better process integration of the TSV liner film with the preceding and following layers.

[0081] When using PEALD equipment to deposit SiO2 for spacer (sidewall) processes, there are strict requirements for the WER (Wet Etch Rate) range of the thin film. In existing technologies, the WER requirement can be met by adjusting the high-frequency RF power supply and other process parameters, but this degrades properties such as thickness uniformity and film particle size. In this application, however, the WER requirement can be met by adjusting the low-frequency energy (the power of the first RF power supply) within a small range, while simultaneously adjusting the power of the second RF power supply. Since the first RF power supply and other process parameters remain unchanged or only slightly changed, properties such as thickness uniformity and film particle size remain essentially constant.

[0082] Optional, see reference Figure 3 As shown, the RF power output circuit also includes: a first RF matching circuit 211 and a second RF matching circuit 212.

[0083] The input terminal of the first RF matching circuit is electrically connected to the output terminal of the first RF power supply, and the output terminal of the first RF matching circuit is electrically connected to the first input terminal of the power distribution module.

[0084] The input terminal of the second RF matching circuit is electrically connected to the output terminal of the second RF power supply, and the output terminal of the second RF matching circuit is electrically connected to the second input terminal of the power distribution module.

[0085] This application does not limit the specific structure of the first and second RF matching circuits described above. Matching circuits generally include L-type matching networks, Π-type (P-type) matching networks, or T-type matching networks, which can be selected according to actual requirements. For relevant descriptions of L-type, Π-type, or T-type matching networks, please refer to existing technologies; they will not be detailed here. The first RF matching circuit maximizes the output power of the first RF power supply while minimizing reflection loss. The second RF matching circuit maximizes the output power of the second RF power supply while minimizing reflection loss.

[0086] For example, refer to Figure 4 As shown, the first RF matching circuit 211 includes a first capacitor C1, a first capacitor C2, and a first inductor L1; wherein, the first end of the first capacitor C1 and the first end of the first capacitor C2 are both electrically connected to the output end of the first RF power supply 201, and the second end of the first capacitor C1 is grounded; the second end of the first capacitor C2 is electrically connected to the first end of the first inductor L1; and the second end of the first inductor L1 is electrically connected to the first node N1.

[0087] The second RF matching circuit 212 includes a third capacitor C3, a fourth capacitor C4, and a second inductor L2; wherein, the first end of the third capacitor C3 and the first end of the second inductor L2 are both electrically connected to the output terminal of the second RF power supply 202, and the second end of the third capacitor C3 is grounded; the second end of the second inductor L2 and the first end of the fourth capacitor C4 are both electrically connected to the second node N2; the second end of the fourth capacitor C4 is grounded.

[0088] In the first RF matching circuit 211, the branch containing the first capacitor C2 and the first inductor L1 forms an L-shaped structure with the branch containing the first capacitor C1. This first RF matching circuit is an L-shaped matching network circuit, which can provide wide-band impedance matching between the first RF power supply and the load, and its structure is simple and easy to implement. In the second RF matching circuit 212, the branch containing the third capacitor C3, the branch containing the second inductor L2, and the branch containing the fourth capacitor C4 form a Π-shaped structure. This second RF matching circuit is a Π-shaped matching network circuit, which can achieve more accurate matching and a smaller error rate.

[0089] It should be noted that, in the circuit diagram structure, when the component (inductor or capacitor) is arranged vertically, the upper end is the first end and the lower end is the second end; when the component (inductor or capacitor) is arranged horizontally, the left end is the first end and the right end is the second end. For example... Figure 3 The first capacitor C1 is set vertically, with the upper end being the first terminal and the lower end being the second terminal; Figure 3 In the middle, the second capacitor C2 is set in the horizontal direction, with the left end being the first end and the right end being the second end; Figure 3 In the diagram, the first inductor L1 is positioned horizontally, with the left end being the first terminal and the right end being the second terminal. The meanings of the first and second terminals of other inductors or capacitors are similar and will not be explained further below.

[0090] In one or more embodiments, reference is made to Figure 3 As shown, the power distribution module 22 includes multiple power distribution units, and each power distribution unit corresponds to a multiple process chamber 24.

[0091] refer to Figure 4 As shown, the power distribution unit includes a first filter circuit 221 and a second filter circuit 222. The input terminal of the first filter circuit 221 is electrically connected to the first RF power supply 201, and the output terminal is electrically connected to the corresponding process chamber. The first filter circuit is used to isolate signals other than the first RF signal. The input terminal of the second filter circuit 222 is electrically connected to the second RF power supply 202, and the output terminal is electrically connected to the output terminal of the first filter circuit. The second filter circuit is used to isolate signals other than the second RF signal. Figure 4 The diagram is illustrated using the example of the power distribution module comprising two power distribution units and the electrical connection of the base 242 of two process chambers.

[0092] Each of the above power distribution units is equipped with a corresponding process chamber, and high-frequency energy and / or low-frequency energy are simultaneously fed into the corresponding process chamber.

[0093] The first radio frequency energy (i.e., high-frequency energy) generated by the first radio frequency power supply and / or the second radio frequency energy (i.e., low-frequency energy) generated by the second radio frequency power supply can be evenly distributed to each process chamber after passing through multiple power distribution units, while avoiding crosstalk between the two different frequencies of energy.

[0094] The first filter circuit described above can isolate and block low-frequency energy (e.g., 400kHz) from flowing through, while ensuring that high-frequency energy (e.g., 13.56MHz) can flow through, and at the same time, prevent low-frequency energy from flowing to the first RF power supply; the second filter circuit described above can filter out high-frequency energy (e.g., 13.56MHz), that is, block high-frequency energy from flowing through, while ensuring that low-frequency energy (e.g., 400kHz) can flow through, and at the same time, prevent high-frequency energy from flowing to the second RF power supply.

[0095] In practical implementation, series resonance can easily form between the power distribution unit and the cavity. If series resonance occurs during the ignition process, excessive current in the circuit can easily burn out components, significantly reducing safety performance and equipment quality. (Optional, refer to...) Figure 4 As shown, the power distribution unit also includes a balancing circuit 223, which is located between the output of the first filter circuit 221 and the process chamber 24. The balancing circuit 223 is used to change the resonant point of the circuit and avoid series resonance. In other words, by setting up the balancing circuit, the resonant point of the circuit can be changed, thereby avoiding series resonance and improving safety performance and equipment quality.

[0096] To simplify the structure, facilitate implementation, and further reduce costs, optional reference is available. Figure 4 As shown, the first filter circuit 221 includes a fifth capacitor C5, the second filter circuit 222 includes a sixth capacitor C6 and a third inductor L3 connected in parallel, and the balancing circuit 223 includes a fourth inductor L4; wherein, the first end of the fifth capacitor C5 is electrically connected to the first RF power supply 201, the first ends of the sixth capacitor C6 and the third inductor L3 are both electrically connected to the second RF power supply 202, the second ends of the fifth capacitor C5, the second ends of the sixth capacitor C6 and the second ends of the third inductor L3 are all electrically connected to the first end of the fourth inductor L4, and the second end of the fourth inductor L4 is electrically connected to the corresponding process chamber.

[0097] The larger the inductance value of the inductor, the greater the loss of high-frequency energy. In order to minimize the loss of the first radio frequency energy (i.e., high-frequency energy), the inductance value of the fourth inductor can be smaller than that of the third inductor.

[0098] To prevent the first radio frequency energy (i.e., high-frequency energy) flowing from the first filter circuit to the second radio frequency power supply, and to prevent any impact on the second radio frequency power supply, optionally, refer to... Figure 4 As shown, the power distribution unit also includes an isolation circuit 224. The input terminal of the isolation circuit 224 is electrically connected to the input terminal of the second filter circuit 222, and the output terminal of the second filter circuit 222 is grounded. The second filter circuit 222 is used to isolate the first radio frequency signal flowing from the first filter circuit to the second filter circuit. In this way, the first radio frequency energy (i.e., high-frequency energy) flowing out of the first filter circuit is grounded after passing through the second filter circuit and the isolation circuit, so that it will not flow to the second radio frequency power supply and avoid affecting the second radio frequency power supply.

[0099] To effectively isolate high-frequency energy, optional reference... Figure 4 As shown, the isolation circuit 224 includes a seventh capacitor C7; the first terminal of the seventh capacitor C7 is electrically connected to the first terminal of the sixth capacitor C6, and the second terminal of the seventh capacitor C7 is grounded.

[0100] To further ensure that the power of the RF signal output by the RF power output circuit to each process chamber is the same, thereby further improving the process matching degree of each chamber, in one or more embodiments, reference is made to... Figure 3 As shown, the RF power output circuit also includes: multiple power compensation units 23; the multiple power compensation units and multiple power distribution units correspond one-to-one.

[0101] The input terminal of the power compensation unit is electrically connected to the output terminal of the corresponding power distribution unit, and the output terminal of the power compensation unit is used to electrically connect to the corresponding process chamber. Each power compensation unit is used to adjust the impedance value so that the power of the radio frequency signal output by each power compensation unit to the corresponding process chamber is the same.

[0102] This application does not limit the specific structure of the power distribution unit described above, and the appropriate structure can be selected based on actual needs. Each power distribution unit outputs an RF signal to one process chamber. Each power distribution unit can adjust its impedance value according to the process results, thereby changing the first RF energy value and / or the second RF energy value flowing into each process chamber, thus ensuring that the power of the RF signal output to each process chamber is the same, thereby achieving RF power compensation for each chamber.

[0103] Optionally, to further simplify the structure and facilitate implementation, the power compensation unit may include a first variable capacitor and a second variable capacitor connected in parallel; the first terminal of the first variable capacitor and the first terminal of the second variable capacitor are both electrically connected to the output terminal of the corresponding power distribution unit, and the second terminal of the first variable capacitor and the second terminal of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber.

[0104] The power distribution unit outputs a first signal and a second signal, the frequency of the first signal being greater than the frequency of the second signal; a first variable capacitor is used to adjust the energy value of the first signal, and a second variable capacitor is used to adjust the energy value of the second signal.

[0105] By adjusting the impedance values ​​of the first and second variable capacitors, the current values ​​of these two branches can be adjusted respectively, thereby changing the energy value of the first signal (i.e., the high-frequency energy value) and the energy value of the second signal (i.e., the low-frequency energy value), and thus changing the total energy value of the radio frequency signal flowing into the process chamber, ultimately achieving the purpose of power compensation and realizing chamber matching.

[0106] Optionally, the frequency range of the first radio frequency signal includes 10MHz to 100MHz. For example, the frequency value of the first radio frequency signal can be 10MHz, 13.56MHz, 15MHz, 30MHz or 50MHz, etc., with 13.56MHz being the most commonly used. The frequency range of the second radio frequency signal includes 300KHz to 500KHz. For example, the frequency value of the second radio frequency signal can be 300KHz, 400KHz or 500KHz, etc., with 400KHz being the most commonly used.

[0107] Embodiments of this application also provide a semiconductor process apparatus, including multiple independent process chambers and the aforementioned radio frequency power output circuit.

[0108] refer to Figure 5 As shown, the process chamber includes a chamber body 249 and an upper electrode assembly and a lower electrode assembly located within the chamber body 249 and disposed opposite to each other; each output terminal of the power distribution module of the RF power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

[0109] The aforementioned upper electrode assembly may include, for example: Figure 5 The cavity cover 243 and the flow equalization structure 241 shown are fixed to one side of the cavity cover 243; the lower electrode assembly may include, for example, Figure 5 The base 242 shown.

[0110] The RF power output circuit is used to feed RF signals to the upper or lower electrode components of each process chamber. Each output terminal of the power distribution module of the RF power output circuit can be electrically connected to the upper electrode component of the corresponding process chamber, in which case the lower electrode component of each process chamber is grounded; alternatively, each output terminal of the power distribution module of the RF power output circuit can be electrically connected to the lower electrode component of the corresponding process chamber, in which case the upper electrode component of each process chamber is grounded; or, some output terminals of the power distribution module of the RF power output circuit are electrically connected to the upper electrode component of the corresponding process chamber (in which case the lower electrode component of that part of the process chamber is grounded), and the remaining output terminals are electrically connected to the lower electrode component of the corresponding process chamber (in which case the upper electrode component of that part of the process chamber is grounded). No specific limitations are imposed here.

[0111] To improve chamber matching, each output terminal of the power distribution module of the RF power output circuit can be electrically connected to the base of the corresponding process chamber, and the chamber cover and current equalization structure of each process chamber can be grounded. The first RF energy and / or the second RF energy are fed into the base, thereby forming a negative bias voltage on the wafer surface. Under the action of the negative bias voltage, the deposited reactants are more dense, which is more conducive to improving the film quality (e.g., WER and stress film performance).

[0112] When the output terminal of the power distribution module of the RF power output circuit is electrically connected to the upper electrode assembly, this output terminal can be electrically connected to the current equalization structure, or it can be electrically connected to the cavity cover; there is no limitation here. When the output terminal of the power distribution module of the RF power output circuit is electrically connected to the lower electrode assembly, this output terminal can be electrically connected to the base. The specific location of the electrical connection to the base is not limited. For example, for ease of implementation and to avoid occupying additional space, it can be electrically connected to the base shaft (heater shaft).

[0113] For a detailed description of the above-mentioned radio frequency power output circuit, please refer to the foregoing embodiments, which will not be repeated here.

[0114] The semiconductor process equipment provided in this application belongs to atomic layer deposition equipment, which may also include an air intake structure, an online cleaning structure, and an exhaust structure. The air intake structure, online cleaning structure, and exhaust structure can refer to the prior art and will not be described here.

[0115] By applying the semiconductor process equipment provided in this application for thin film deposition, the problem of low chamber matching caused by differences in the radio frequency system is improved, thereby enhancing thin film performance. Furthermore, with the power distribution module of the radio frequency power output circuit used to evenly distribute the first radio frequency signal energy output by the first radio frequency power supply and the second radio frequency signal energy output by the second radio frequency power supply to each of the process chambers, the stress performance of the thin film can be improved without reducing thickness uniformity and thin film particle performance, significantly enhancing thin film quality; simultaneously, the number of high-frequency power supplies is reduced, thereby lowering equipment costs.

[0116] In existing technologies, the chamber cover is the first point through which source gases, process gases, and radio frequency energy pass before entering the chamber; therefore, temperature control of the chamber cover is crucial. (Reference) Figure 6 As shown, four independent heating blocks 13 are set on the upper surface of the chamber cover. The four heating blocks are connected in series to heat the chamber cover. The heating blocks can be made of heating plates. Figure 6 In the middle, the air intake component is marked as 7, and the exposed area on the chamber cover not covered by the heating block 13 is marked as 130.

[0117] The heating process of the chamber cover plate during the PEALD SiN thin film formation process is illustrated as an example; in this process, the temperature of the heating base is 450℃, and the set temperature of the chamber cover plate is 200℃. (Reference) Figure 7 As shown, four heating plates heat the chamber cover. In the first stage (step 1), from 0 min to t1 min, the temperature rises from room temperature (25℃) to the set temperature (200℃). Then, the chamber transitions from heating to a holding stage. Due to inertia, in the second stage (step 2), the maximum temperature can reach approximately 215℃. After adjustment using PID (Proportional Integral Derivative) control, the temperature gradually drops back to the set temperature of 200℃, taking (t2-t1) min. Because the heating plate power is fixed, the heating rate of the chamber cover is rapid in the first stage, which can easily damage fragile components within the chamber. Furthermore, the maximum heating temperature exceeds the set temperature significantly, resulting in a longer recovery time and an overall longer heating time, thus reducing production capacity.

[0118] The existing technology using heating blocks on the chamber cover has drawbacks such as a single heating method and poor temperature control accuracy due to poor repeatability of the heating block manufacturing process. Furthermore, this heating method also affects the RF output. Both the heating element and the temperature control element can interfere with the RF. In actual processes, there have been multiple instances of thin film performance fluctuations caused by the heating element. During actual processing, it was found that even with the same RF power setting for both chambers, there are differences in the thin film performance (thickness, thickness uniformity, WER, stress, etc.) between the two chambers. These differences may be due to various factors, including differences in the hardware of the two chambers themselves, differences in the actual RF feed energy, insufficient heating and temperature control accuracy, and untimely temperature feedback.

[0119] To improve temperature control accuracy and reduce heating time, optionally, combined with Figure 5 , Figure 8 and Figure 9 The cavity cover 243 includes an air inlet block 248; the process chamber also includes an annular insulation layer 240, an annular heating band 245, and multiple heating rods 244 disposed on the side of the cavity cover 243 away from the uniform flow structure 241; the inner ring of the annular insulation layer 240 is used to expose the air inlet block 248 of the cavity cover; multiple heating rods 244 are arranged around the annular insulation layer 240, with a part of the heating rods 244 disposed inside the cavity cover 243 and the rest protruding from the upper surface of the cavity cover 243; the annular heating band 245 is arranged around the multiple heating rods 244.

[0120] To improve heating uniformity, multiple heating rods can be evenly arranged around the annular insulation layer. The angle between the heating rods and the upper surface of the cavity cover is not limited. For example, the heating rods can be positioned perpendicular to the upper surface of the cavity cover, in which case they are inserted vertically into the cavity cover; alternatively, the heating rods can be positioned at an acute angle to the upper surface of the cavity cover, in which case they are inserted obliquely into the cavity cover. The direction of this oblique insertion is not limited; it can be as follows: Figure 10 As shown, it is inserted obliquely into the cavity cover along a direction away from the center of the cavity cover 243, or, as... Figure 11 As shown, it is inserted obliquely into the cavity cover 243 along the direction close to the center. To save space, it can be selected... Figure 5 The heating rod 244 shown is perpendicular to the upper surface of the cavity cover 243; to improve the temperature uniformity of the cavity cover, it can be selected... Figure 11 The structure shown is such that the heating rod 244 is inserted obliquely into the cavity cover 243 along the direction close to the center of the cavity cover 243.

[0121] The number, heating power, and specific placement of the heating rods can be adjusted according to the process temperature requirements. For example, the number of heating rods can be 5 to 10, with 6 to 8 being the most common choice. The power of the heating rods can be 300W to 1000W, with 400W to 600W being the most common choice. In addition, the insertion angle and depth of the heating rods can be determined based on the shape and thickness of the cavity cover and the flow equalization structure.

[0122] To protect the heating element and extend its lifespan, refer to... Figure 5 As shown, the process chamber may also include a ceramic cylinder 247, which surrounds the heating rod 244, serving both a protective function and facilitating insertion and removal. (Reference) Figure 5 As shown, the cavity cover may also include an annular insulating layer 246, which can isolate the annular heating band from the cavity wall and protect the annular heating band.

[0123] This application provides a heating structure integrating a heating rod and a heating band. The heating band first raises the cavity cover temperature from room temperature to a first preset temperature value, with a relatively low heating rate in this stage. Then, the heating rod is used to raise the cavity cover temperature from the first preset temperature value to a second preset temperature value, with a higher heating rate in this stage. Next, the heating band is used to raise the cavity cover temperature from the second preset temperature value to a target temperature value. Due to inertia, the cavity cover temperature will continue to rise from the target temperature value to its maximum value. Then, a PID control method is used to adjust the temperature back down to near the target temperature value. Since the heating rate of the heating rod is greater than that of the heating band, using the heating band during the stage where the cavity cover temperature rises from the second preset temperature value to the target temperature value can reduce the subsequent maximum temperature reached due to inertia, thereby reducing the temperature recovery time, saving overall heating time, shortening the recovery time after chamber PM or shutdown, and improving machine utilization. In addition, during the stage when the temperature of the cavity cover rises from room temperature to the first preset temperature value, heating is carried out using a heating belt. Due to the small heating rate and low temperature rise rate, the fragile parts inside the cavity can be protected as much as possible, extending their service life.

[0124] Taking the heating process of the chamber cover plate in the PEALD SiN thin film formation process as an example, the temperature of the heating base in this process is 450°C, and the set temperature of the chamber cover plate is 200°C. In the heating process used in this embodiment, the first preset temperature value can be set to 100°C, the second preset temperature value can be set to 180°C, the target temperature value is 200°C, and the maximum temperature during the heating process is 205°C. Compared with the aforementioned prior art where the maximum temperature is 215°C, the maximum temperature reached during the heating process is significantly reduced, thereby reducing the time for the temperature to fall back to the target temperature value from the maximum value and saving the overall heating time.

[0125] Embodiments of this application further provide a temperature control method for semiconductor process equipment, including:

[0126] S1, Reference Figure 12 In the Step 1 stage shown, during the time period from 0 min to t3 min, the heating belt is controlled to heat up, so that the temperature of the cavity cover rises from room temperature to the first preset temperature value.

[0127] The room temperature is generally 25℃. The range of the first preset temperature value can include 90℃~110℃. For example, the first preset temperature value can be 90℃, 100℃ or 110℃, etc., which can be determined according to the actual situation.

[0128] S2, Reference Figure 12 In the Step 2 stage shown, during the time period t3 min-t4 min, the heating belt is controlled to stop heating, and the heating rod is controlled to heat, so that the temperature of the cavity cover rises from the first preset temperature value to the second preset temperature value; the heating rate of the heating rod is greater than the heating rate of the heating belt.

[0129] The range of the second preset temperature value can include 170℃~190℃. For example, the second preset temperature value can be 170℃, 180℃ or 190℃, etc., which can be determined according to the actual situation.

[0130] S3, Reference Figure 12 In the Step 3 stage shown, during the time period t4 min-t5 min, the heating rod is controlled to stop heating, and the heating belt is controlled to heat up, so that the temperature of the cavity cover rises from the second preset temperature value to the target temperature value.

[0131] The target temperature range can include 195℃ to 205℃. For example, the target temperature can be 195℃, 200℃, or 205℃, which can be determined according to the actual situation.

[0132] The above temperature control method can, on the one hand, reduce the maximum temperature reached due to inertia, thereby reducing temperature recovery time, saving overall heating time, shortening recovery time after chamber PM or shutdown, and improving machine utilization. On the other hand, during the stage when the chamber cover temperature rises from room temperature to the first preset temperature value, heating with a heating belt is used. Due to the low heating rate and low temperature rise rate, it can protect fragile components in the chamber as much as possible and extend their service life.

[0133] It should be noted that after step S3 above, the temperature control method also includes:

[0134] S4, Reference Figure 12In the Step 4 stage shown, during the time period from t5 min to t6 min, PID control is used to adjust the temperature so that it drops back to the target temperature value.

[0135] PID control methods are widely used in temperature control, water level control, flight attitude control and other fields. For relevant explanations, please refer to existing technologies, which will not be elaborated here.

[0136] It should be noted that the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0137] The terms "one embodiment," "embodiment," or "one or more embodiments" as used in this application mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of this application. Furthermore, please note that the examples of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.

[0138] The above description is merely an embodiment of this application and is not intended to limit the scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of the claims of this application.

Claims

1. A radio frequency power output circuit, characterized in that, Applied to semiconductor process equipment, the semiconductor process equipment includes: multiple independent process chambers; the radio frequency power output circuit includes: The radio frequency power supply module includes a first radio frequency power supply and a second radio frequency power supply. The first radio frequency power supply is used to output a first radio frequency signal, and the second radio frequency power supply is used to output a second radio frequency signal. The frequency value of the first radio frequency signal is greater than the frequency value of the second radio frequency signal. The power distribution module includes a first input terminal, a second input terminal, and multiple output terminals corresponding one-to-one with the multiple process chambers; the first input terminal is electrically connected to the first RF power supply and is used to receive the first RF signal output by the first RF power supply; the second input terminal is electrically connected to the second RF power supply and is used to receive the second RF signal output by the second RF power supply; each output terminal is used to be electrically connected to the corresponding process chamber; the power distribution module is used to evenly distribute the energy of the first RF signal received by the first input terminal and / or the energy of the second RF signal received by the second input terminal to each of the process chambers; The power distribution module includes a power distribution unit, and the power distribution unit includes a first filter circuit and a second filter circuit. The input terminal of the first filter circuit is electrically connected to the first radio frequency power supply, and the output terminal is electrically connected to the corresponding process chamber; the first filter circuit is used to isolate signals other than the first radio frequency signal. The input terminal of the second filter circuit is electrically connected to the second RF power supply, and the output terminal is electrically connected to the output terminal of the first filter circuit; the second filter circuit is used to isolate signals other than the second RF signal. The first filter circuit includes a fifth capacitor, and the second filter circuit includes a sixth capacitor and a third inductor connected in parallel. The first terminal of the fifth capacitor is electrically connected to the first RF power supply, the first terminal of the sixth capacitor and the first terminal of the third inductor are both electrically connected to the second RF power supply, and the second terminal of the fifth capacitor, the second terminal of the sixth capacitor and the second terminal of the third inductor are all electrically connected to the corresponding process chamber.

2. The radio frequency power output circuit according to claim 1, characterized in that, The power distribution module includes multiple power distribution units, and each of the multiple power distribution units corresponds to one of the multiple process chambers.

3. The radio frequency power output circuit according to claim 2, characterized in that, The power distribution unit further includes a balancing circuit, which is disposed between the output terminal of the first filter circuit and the process chamber to change the resonant point of the circuit and avoid series resonance.

4. The radio frequency power output circuit according to claim 3, characterized in that, The balancing circuit includes a fourth inductor; Specifically, the second terminal of the fifth capacitor, the second terminal of the sixth capacitor, and the second terminal of the third inductor are all electrically connected to the first terminal of the fourth inductor, and the second terminal of the fourth inductor is electrically connected to the corresponding process chamber.

5. The radio frequency power output circuit according to claim 4, characterized in that, The inductance value of the fourth inductor is less than the inductance value of the third inductor.

6. The radio frequency power output circuit according to claim 5, characterized in that, The power distribution unit also includes an isolation circuit; The input terminal of the isolation circuit is electrically connected to the input terminal of the second filter circuit, and the output terminal of the isolation circuit is grounded; the isolation circuit is used to isolate the first radio frequency signal flowing from the first filter circuit to the second filter circuit.

7. The radio frequency power output circuit according to claim 6, characterized in that, The isolation circuit includes a seventh capacitor; The first terminal of the seventh capacitor is electrically connected to the first terminal of the sixth capacitor, and the second terminal of the seventh capacitor is grounded.

8. The radio frequency power output circuit according to any one of claims 2-7, characterized in that, The radio frequency power output circuit also includes multiple power compensation units; the multiple power compensation units and the multiple power distribution units correspond one-to-one. The input terminal of the power compensation unit is electrically connected to the output terminal of the corresponding power distribution unit, and the output terminal of the power compensation unit is used to be electrically connected to the corresponding process chamber; each power compensation unit is used to adjust the impedance value so that the power of the radio frequency signal output by each power compensation unit to the corresponding process chamber is the same.

9. The radio frequency power output circuit according to claim 8, characterized in that, The power compensation unit includes a first variable capacitor and a second variable capacitor connected in parallel. The first terminal of the first variable capacitor and the first terminal of the second variable capacitor are both electrically connected to the output terminal of the corresponding power distribution unit. The second terminals of the first variable capacitor and the second terminal of the second variable capacitor are both grounded and used to be electrically connected to the corresponding process chamber. The power distribution unit outputs a signal including a first signal and a second signal, wherein the frequency of the first signal is greater than the frequency of the second signal; The first variable capacitor is used to adjust the energy value of the first signal, and the second variable capacitor is used to adjust the energy value of the second signal.

10. The radio frequency power output circuit according to claim 1, characterized in that, The frequency range of the first radio frequency signal is 10MHz to 100MHz, and the frequency range of the second radio frequency signal is 300KHz to 500KHz.

11. The radio frequency power output circuit according to claim 1, characterized in that, The radio frequency power output circuit further includes: a first radio frequency matching circuit and a second radio frequency matching circuit. The input terminal of the first RF matching circuit is electrically connected to the output terminal of the first RF power supply, and the output terminal of the first RF matching circuit is electrically connected to the first input terminal of the power distribution module. The input terminal of the second RF matching circuit is electrically connected to the output terminal of the second RF power supply, and the output terminal of the second RF matching circuit is electrically connected to the second input terminal of the power distribution module.

12. The radio frequency power output circuit according to claim 11, characterized in that, The first radio frequency matching circuit includes a first capacitor, a second capacitor, and a first inductor; Wherein, the first end of the first capacitor and the first end of the second capacitor are both electrically connected to the output end of the first RF power supply, the second end of the first capacitor is grounded, the second end of the second capacitor is electrically connected to the first end of the first inductor, and the second end of the first inductor is electrically connected to the first input end of the power distribution module; The second RF matching circuit includes a third capacitor, a fourth capacitor, and a second inductor; The first end of the third capacitor and the first end of the second inductor are both electrically connected to the output terminal of the second RF power supply, the second end of the third capacitor is grounded, the second end of the second inductor and the first end of the fourth capacitor are both electrically connected to the second input terminal of the power distribution module, and the second end of the fourth capacitor is grounded.

13. A semiconductor process apparatus, characterized in that, Includes multiple independent process chambers and the radio frequency power output circuit as described in any one of claims 1-12; The process chamber includes a chamber body and an upper electrode assembly and a lower electrode assembly located within the chamber body and disposed opposite to each other; Each output terminal of the power distribution module of the radio frequency power output circuit is electrically connected to the upper electrode assembly or the lower electrode assembly of the corresponding process chamber.

14. The semiconductor process equipment according to claim 13, characterized in that, The upper electrode assembly includes a cavity cover and a flow equalization structure, the flow equalization structure being fixed to one side of the cavity cover, and the cavity cover including an air inlet block; The process chamber also includes an annular insulation layer, an annular heating band, and multiple heating rods disposed on the side of the chamber cover away from the uniform flow structure; the inner ring of the annular insulation layer is used to expose the air inlet block of the chamber cover; the multiple heating rods are arranged around the annular insulation layer, with a part of the heating rod disposed inside the chamber cover and the rest protruding from the upper surface of the chamber cover; The annular heating band is arranged around the plurality of heating rods.

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