Novel glass middle layer and manufacturing method thereof

Abstract

The invention relates to the technical field of heterogeneous integration, three-dimensional integration and advanced packaging, and discloses a novel glass mid-layer and a manufacturing method thereof, and the manufacturing method comprises the following steps: based on a first set parameter, exciting ultraviolet laser to carry out through hole area scanning on a photosensitive glass substrate; based on a second set parameter, exciting the ultraviolet laser to carry out shallow slot area scanning on the photosensitive glass substrate; performing heat treatment on the photosensitive glass substrate; a hydrofluoric acid solution is adopted to etch the sample subjected to heat treatment, ultrasonic vibration is applied during etching, and a glass mid-layer sample is obtained; cleaning and drying the glass middle layer sample, and mounting a chip on the surface of the glass middle layer to obtain a packaging body; and filling the silicon through hole, the redistribution layer and the through hole in the chip with conductive adhesive to obtain the novel glass middle layer. The invention provides the embedded redistribution layer, and the embedded redistribution layer and the glass through hole are integrally filled with the conductive adhesive, so that the processing efficiency and the cost of the glass middle layer are optimized.

Description

Technical Field

[0001] The present invention relates to the technical fields of heterogeneous integration (HI), 3D integration, and advanced packaging, and particularly relates to a novel glass interposer and a manufacturing method thereof. Background Art

[0002] Restricted by the three factors of physical limits, technical means, and economic costs, the traditional 2D packaging technology (i.e., laying devices or chips flat in a plane) has been difficult to meet people's requirements for higher performance, smaller size, and lower power consumption of electronic devices. However, 3D integration technology can stack different devices or chips in the vertical direction, enabling an increase in the functions of the entire system, an improvement in bandwidth, a reduction in power consumption, a reduction in size, and a reduction in latency. Therefore, 3D integration technology has currently become an important development direction in the semiconductor industry.

[0003] Different devices or chips usually have differences in multiple aspects such as materials, sizes, and pin forms. Therefore, they need to be placed on an interposer first and then connected to the packaging substrate. According to the different interposer materials, they can be divided into polymer interposers, silicon interposers, and glass interposers. A major advantage of organic interposers is that they can be manufactured at the panel level, and their processes are relatively easy, so the cost is low. However, there are significant differences in the coefficient of thermal expansion (CTE) between them and most devices or chips, so cracking is likely to occur at the bonding interface. Currently, organic interposers have not been commercially applied. Silicon interposers are similar to most chips in terms of thermal and mechanical properties, and have high compatibility with existing integrated circuit processes and equipment, so they are the most widely used. However, due to the high conductivity of the silicon substrate (due to doping), in the direct current (DC) scenario, insulating layers must be prepared in some areas to prevent short circuits; in the alternating current (AC) scenario, problems such as excessive loss or crosstalk may occur. The thermo-mechanical stability of glass is much higher than that of polymers, and it inherently has good high-frequency electrical properties (such as high dielectric constant and resistivity) and light transmittance; thus, currently, interposers have gradually shifted from silicon-based to glass-based, especially in the application of co-packaging of optics and electronics.

[0004] However, with the increase in the number of chip pins and the reduction in size within the package, problems in the manufacturing and usage of through glass vias (TGVs) and redistribution layers (RDLs) in the glass middle layer have become increasingly evident.

[0005] The through-holes and redistribution layers within the glass middle layer are usually processed step by step. The general process is as follows: First, through-holes are prepared by methods such as plasma etching, laser ablation, or laser-induced etching. Second, a barrier layer (the material can be titanium tungsten) and a copper seed layer are sequentially deposited inside the through-holes. Third, the through-holes are filled with electroplated copper. Fourth, the excess overburden layer on the surface of the glass substrate is removed and polished. Fifth, the redistribution layer is prepared through a lift-off process. The above process is too complex and time-consuming, especially the electroplating filling link. The reason is that in order to achieve complete filling, a large amount of cost must be invested to ensure that the copper seed layer has sufficient coverage and thickness uniformity, the deposition rate of copper cannot be too high, and the concentration ratio of additives in the electroplating solution is appropriate.

[0006] The electrical and mechanical connection between the chip and the glass middle layer is usually achieved by means of copper pillars (Cupillar) plus bonding pads. During the operation of the chip, the temperature often changes frequently, which easily leads to cracking at the bonding interface of different materials. Due to the difference in the thermal expansion coefficients of glass and silicon (considering that chips are often silicon-based), compared with the silicon middle layer, the glass middle layer is more likely to crack at the copper pillar-bonding pad bonding interface.

[0007] Based on the above analysis, it can be seen that the two major difficulties that need to be overcome in the current glass middle layer technology are how to optimize its own processing technology and how to improve the chip-glass middle layer connection quality. Summary of the Invention

[0008] The purpose of the present invention is to provide a novel glass middle layer and its manufacturing method, propose an embedded redistribution layer (embedded RDL), and integrally fill it with the glass through-holes using conductive adhesive, thereby optimizing the processing efficiency and cost of the glass middle layer, and improving its working stability, laying a foundation for the large-scale application of heterogeneous integration and optoelectronic packaging.

[0009] In order to achieve the above purpose, the technical solutions adopted are as follows:

[0010] In the first aspect, the present invention provides a manufacturing method of a novel glass middle layer, and the manufacturing method includes:

[0011] Based on the first set of parameters, ultraviolet laser is excited to scan the through-hole area on the photosensitive glass substrate;

[0012] Based on the second set of parameters, an ultraviolet laser is excited to scan the shallow trench region on the photosensitive glass substrate;

[0013] Heat treatment is performed on the photosensitive glass substrate; wherein, the heat treatment includes two stages, namely the first stage and the second stage. In the first stage, the photosensitive glass substrate is heated to a first temperature at a first heating rate and maintained at the first temperature for a holding time to form silver nanoclusters in the modified region. In the second stage, the photosensitive glass substrate is heated from the first temperature to a second temperature at a second heating rate and maintained at the second temperature for a holding time to generate a soluble lithium metasilicate crystal phase in the modified region; the modified region includes a via region and a shallow trench region;

[0014] The sample after heat treatment is etched with a hydrofluoric acid solution. During the etching, ultrasonic vibration is applied to enhance the etching selectivity of the lithium metasilicate crystal phase region to obtain a glass middle layer sample; wherein, the glass middle layer sample includes a photosensitive glass substrate and a redistribution layer and vias disposed on the photosensitive glass substrate, the vias communicate with the redistribution layer, and the redistribution layer is embedded in the top of the photosensitive glass substrate;

[0015] The glass middle layer sample is cleaned and dried, and a chip is mounted on the surface of the glass middle layer to obtain a package, wherein the through-silicon via inside the chip in the package is aligned with the distal end of the redistribution layer;

[0016] A conductive adhesive is filled into the through-silicon via inside the chip, the redistribution layer, and the vias to obtain a novel glass middle layer.

[0017] Further, the first set of parameters includes a first laser wavelength, a first laser power, a first number of passes of the focal spot in the vertical direction, a first step, a first scanning line speed and a first number of repetitions on the same focal plane, and a filling area diameter; wherein, the filling area diameter corresponds to the required via diameter.

[0018] Further, the first laser wavelength is 355 nm, the first laser power is 10 - 20 W, the first number of passes of the focal spot in the vertical direction is 80 - 120 times, the first step is 4 - 6 μm, the first scanning line speed and the first number of repetitions on the same focal plane are respectively set to 15 - 25 mm / s and 15 - 25 times, and the filling area diameter is 45 - 55 μm.

[0019] Further, the second set of parameters includes the second laser wavelength, the second laser power, the second number of passes of the focal spot in the vertical direction, the second step size, the second scanning line speed and the second number of repetitions on the same focal plane, and the filling pattern; wherein, the filling pattern has the required via hole diameter as the width, and the straight line length corresponds to the length of the metal wire of the redistribution layer.

[0020] Further, the second laser wavelength is 355 nm, the second laser power is 6 - 10 W, the second number of passes of the focal spot in the vertical direction is 4 - 10 times, the second step size is 8 - 12 μm, and the second scanning line speed and the second number of repetitions on the same focal plane are set to 15 - 25 mm / s and 40 - 60 times, respectively.

[0021] Further, the first heating rate is 2 - 4 °C / min, the first temperature is 400 - 600 °C, the first temperature holding time is 0.75 - 1.5 h, the second heating rate is 0.5 - 1.5 °C / min, the second temperature is 500 - 700 °C, and the second temperature holding time is 0.75 - 1.5 h.

[0022] Further, the concentration of the hydrofluoric acid solution is 7.5% - 12.5%, the temperature is 20 - 30 °C, the power of the ultrasonic vibration is 300 - 500 W, and the frequency is 35 - 45 kHz.

[0023] Further, the diameter of the via hole and the width of the redistribution layer are both 100 ± 5 μm, and the length and depth of the redistribution layer are 1000 ± 5 μm and 100 ± 5 μm, respectively.

[0024] Further, the method of filling the conductive adhesive into the through - silicon vias, redistribution layer and vias inside the chip is as follows:

[0025] Place the package on a vacuum adsorption platform;

[0026] According to the number and volume of the shallow grooves of the via holes, use a dropper to measure a sufficient amount of conductive adhesive and apply it to the upper surface of the chip;

[0027] Start the vacuum system. Under the action of vacuum negative pressure, the conductive adhesive is quickly sucked into the through - silicon vias inside the chip, and gradually flows through the redistribution layer and the vias until the entire cavity is completely filled;

[0028] Cure the conductive adhesive inside the package;

[0029] Adopt the back - thinning technology to remove the residual conductive adhesive on the upper and lower surfaces of the package. In the second aspect, the present invention provides a novel glass middle layer manufactured by the manufacturing method as described above.

[0030] The beneficial effects of the present invention are:

[0031] 1) Different from the step-by-step processing mode of traditional redistribution layers and vias, the present invention realizes the synchronous processing of redistribution layers and vias on a glass substrate through a combination of ultraviolet laser-induced modification and chemical etching, thereby reducing the alignment error (generated by step-by-step processing), simplifying the processing flow, and reducing the processing cost.

[0032] 2) Compared with the traditional electroplated copper process, the present invention uses a method of vacuum adsorbing liquid conductive adhesive to fill the integrated redistribution layer and vias, which can not only greatly accelerate the metallization speed but also fundamentally eliminate the possibility of thermal cracking at the chip-glass middle layer interface. Description of the Drawings

[0033] Figure 1 It is a flowchart of a manufacturing method of a novel glass middle layer according to an embodiment of the present invention.

[0034] Figure 2 It shows a schematic diagram of the manufacturing process of a novel glass middle layer according to an embodiment of the present invention.

[0035] Figure 3 It shows a schematic diagram of ultraviolet laser scanning the via region and the shallow trench region according to an embodiment of the present invention; among them, (a) is the via region; (b) is the shallow trench region.

[0036] Figure 4 It shows a structural diagram of a vacuum adsorption platform according to an embodiment of the present invention.

[0037] Description of the Reference Numerals:

[0038] 100, laser generator; 200, photosensitive glass substrate; 300, via region; 400, shallow trench region; 500, modified region; 600, glass middle layer sample; 700, redistribution layer; 800, via; 900, package; 1000, chip; 1100, through-silicon via; 1200, support; 1300, filter; 1400, air extraction hole; 1500, sealing gasket; 1600, conductive adhesive. Detailed Embodiments

[0039] The following illustrates the embodiments of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0040] The specific embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0041] An embodiment of the present invention provides a method for manufacturing a novel glass middle layer. This method scans a photosensitive glass in the vertical and horizontal directions using an ultraviolet laser, thereby inducing modification of the through-hole and shallow groove regions. After heat-treating the photosensitive glass, a soluble lithium metasilicate crystal phase is formed in the modified region. When the photosensitive glass is immersed in a hydrofluoric acid (HF) solution, the modified region after heat treatment will be etched away (i.e., the reaction product is soluble in the HF solution). After chip mounting, a vacuum adsorption conductive adhesive is used to fill the integrated redistribution layer and through-holes to achieve rapid metallization.

[0042] Specifically, please refer to Figure 1 , which is a flowchart of a method for manufacturing a novel glass middle layer provided by an embodiment of the present invention. This manufacturing method includes steps S10 to S60, a total of six steps. Please refer to Figure 2 , which is a schematic diagram of the manufacturing process of the novel glass middle layer provided by an embodiment of the present invention. Figure 2 The (1)-(6) in Figure 1 respectively correspond to the products obtained in each step of steps S10 to S60 in

[0043] S10: Based on the first set of parameters, an ultraviolet laser is excited to scan the through-hole region on the photosensitive glass substrate.

[0044] In this embodiment, the main component of the photosensitive glass substrate used is lithium-aluminum-silicate, and it is doped with silver and cerium elements. The purpose of step S10 is to scan out the through-hole region on the photosensitive glass substrate.

[0045] In some embodiments, the first set of parameters includes the first laser wavelength, the first laser power, the first number of passes of the focal spot in the vertical direction, the first step, the first scanning line speed and the first number of repetitions on the same focal plane, and the filling area diameter; wherein, the filling area diameter corresponds to the required through-hole diameter.

[0046] Exemplarily, the specific process of scanning the through-hole region using an ultraviolet laser is as follows: On the photosensitive glass substrate, an ultraviolet laser with a first laser wavelength of 355 nm is used to perform a filling scan on the through-hole region with a first laser power of 16 W, as shown in Figure 2 in (1) and Figure 3As shown in (a), corresponding ultraviolet laser is emitted by the laser generator 100 into the photosensitive glass substrate 200 to scan out the through-hole area 300. The first number of travels of the focal spot in the vertical direction is set to 100 times, and the first step is set to 5 μm. On the same focal plane, the first scanning line speed and the first number of repetitions are set to 20 mm / s and 20 times respectively. The diameter of the filling area corresponds to the required through-hole diameter, which is set to 50 μm here. The above scanning parameters can ensure that the perpendicularity of the inner wall of the through-hole and the surface roughness are within a suitable range.

[0047] S20: Based on the second set of parameters, the ultraviolet laser is excited to scan the shallow trench area on the photosensitive glass substrate.

[0048] In some embodiments, the second set of parameters includes the second laser wavelength, the second laser power, the second number of travels of the focal spot in the vertical direction, the second step, the second scanning line speed and the second number of repetitions on the same focal plane, and the filling pattern; wherein, the filling pattern uses the required through-hole diameter as the width, and the straight-line length corresponds to the length of the metal wire of the redistribution layer.

[0049] Exemplarily, the specific process of the ultraviolet laser shallow trench area scanning is as follows: As Figure 2 shown in (2) and Figure 3 shown in (b), on the photosensitive glass substrate 200, ultraviolet laser with a second wavelength of 355 nm is emitted by the laser generator 100 to perform filling scanning on the shallow trench area 400 with a second laser power of 8 W. The second number of travels of the focal spot in the vertical direction is set to 5 times, and the second step is set to 10 μm. On the same focal plane, the second scanning line speed and the second number of repetitions are set to 20 mm / s and 50 times respectively. The filling pattern is approximately an athletics track, and uses the aforementioned through-hole diameter as its width, and its straight-line length corresponds to the length of the metal wire of the redistribution layer, which can be adjusted according to the actual situation and is set to 1 mm here.

[0050] It can be understood that the specific numerical limitations of the above first set of parameters and second set of parameters are only examples and do not constitute a limitation to the present invention. When performing steps S10 and S20, the scanning mode on the same horizontal plane is filling, and by changing the positions of the focal spot in the vertical and horizontal directions, the scanning of the through-hole and shallow trench areas can be achieved. By adjusting scanning parameters such as the ultraviolet laser intensity, power, pulse width, movement speed, position, etc., the macroscopic dimensions and positions of the through-hole and shallow trench can be modified, and their microscopic morphologies can be optimized.

[0051] S30: Perform heat treatment on the photosensitive glass substrate; wherein, the heat treatment includes two stages, namely the first stage and the second stage. In the first stage, heat the photosensitive glass substrate to the first temperature at the first heating rate and maintain the first temperature for a holding time to form silver nanoclusters in the modified region. In the second stage, heat the photosensitive glass substrate from the first temperature to the second temperature at the second heating rate and maintain the second temperature for a holding time to generate a soluble lithium metasilicate crystal phase in the modified region; the modified region includes a via region and a shallow trench region.

[0052] As Figure 2 shown in (3), the modified region 500 is composed of a via region 300 and a shallow trench region 400.

[0053] Exemplarily, in the pretreatment process of step S30, in the first stage, heat the photosensitive glass substrate to 500 °C at a heating rate of 3 °C / min and hold for 1 h to promote the formation of silver nanoclusters; in the second stage, continue to heat to 600 °C at a heating rate of 1 °C / min and hold for 1 h to generate a soluble lithium metasilicate crystal phase, as Figure 2 shown in (3). The heating rates and holding times of the two stages are crucial for the formation of the final via and redistribution layer structures. The formed soluble lithium metasilicate crystal phase can serve as a carrier for silver nanoclusters to facilitate the etching operation in subsequent step S40, thereby enabling the formation of the structures of the via and the redistribution layer.

[0054] S40: Etch the sample that has completed heat treatment with a hydrofluoric acid solution. During the etching, apply ultrasonic vibration to enhance the etching selectivity ratio of the lithium metasilicate crystal phase region to obtain a glass middle layer sample.

[0055] As Figure 2 shown in (4), the glass middle layer sample 600 includes a photosensitive glass substrate 100, a redistribution layer 700 and a via 800 disposed on the photosensitive glass substrate 100. The via 800 communicates with the redistribution layer 700, and the redistribution layer 700 is embedded in the top of the photosensitive glass 100 substrate.

[0056] Exemplarily, during the wet etching process of step S40, place the sample that has completed heat treatment in a hydrofluoric acid solution with a concentration of 10% and a temperature of 25 °C for 20 min for etching. During this period, ultrasonic vibration with a power of 400 W and a frequency of 40 kHz must be supplemented to enhance the etching selectivity ratio of the lithium metasilicate crystal phase region, thereby improving the structural accuracy of the via 800 and the redistribution layer 700. After etching, the diameter of the via 800 and the width of the redistribution layer 700 (i.e., the shallow trench structure) are both 100 ± 5 μm, and the length and depth of the redistribution layer are 1000 ± 5 μm and 100 ± 5 μm respectively.

[0057] S50: Clean and dry the glass middle layer specimen, and attach the chip to the surface of the glass middle layer to obtain a package body.

[0058] As Figure 2 shown in (5), the internal through-silicon via 1100 of the chip 1000 in the package body 900 is aligned with the distal end of the redistribution layer 700 (i.e., the end not connected to the through hole 800).

[0059] Exemplarily, during the process of attaching the chip in step S50, the glass middle layer specimen 600 is soaked in acetone, isopropyl alcohol, and deionized water for 10 minutes in sequence, and then dried with nitrogen to achieve the purpose of cleaning. Then, the chip 1000 is attached to the surface of the glass middle layer specimen 600. Among them, the internal through-silicon via 1100 of the chip 1000 is aligned with the distal end of the redistribution layer 700 (i.e., the non-through hole end), which is convenient for subsequent integrated filling. The adhesive has been pre-coated at the bottom of the chip 1000, so as to ensure the bonding strength between the chip and the glass middle layer.

[0060] S60: Fill the internal through-silicon via of the chip, the redistribution layer, and the through hole with conductive adhesive to obtain a new glass middle layer.

[0061] As Figure 2 shown in (6), it is the structural diagram of the finally obtained new glass middle layer, in which the internal through-silicon via 1100 of the chip 1000, the redistribution layer 700, and the through hole 800 are all filled with conductive adhesive 1600.

[0062] In one embodiment, a vacuum adsorption platform is provided for performing step S60. The structure of the vacuum adsorption platform is as Figure 4 shown, in which the vacuum adsorption platform includes a support 1200, a filter 1300, an air extraction hole 1400, and a sealing gasket 1500. Among them, an air extraction hole 1400 is arranged inside the support 1200. The air extraction hole 1400 is used to connect to a vacuum negative pressure system. A filter 1300 is arranged inside the air extraction hole 1400. A sealing gasket 1500 is arranged at the upper end of the support 1200. The package body 900 is placed on the sealing gasket 1500, and the through hole 800 in the package body 900 communicates with the air extraction hole 1400.

[0063] Based on the above vacuum adsorption platform, the specific process of step S60 to achieve filling the conductive adhesive is as follows: The integrated filling material needs to have a high conductivity (i.e., a low resistivity). Here, a resistivity lower than 10 -4EFTACK 8402V conductive adhesive with Ω·cm. First, place the package body from the previous step on the vacuum adsorption platform. Then, according to the number and volume of the shallow grooves of the through holes, use a dropper to measure an adequate amount of conductive adhesive and apply it to the upper surface of the chip. Next, start the vacuum system. Under the action of the vacuum negative pressure, the conductive adhesive is quickly sucked into the through holes of the chip and gradually flows through the middle layer shallow grooves and the middle layer through holes until the entire cavity is completely filled. Subsequently, place the package body in an environment of 110°C for 1 h and then raise the temperature to 150°C and hold for 2 h to ensure that the conductive adhesive is fully cured. Finally, use the back thinning technology to remove the residual conductive adhesive on the upper and lower surfaces of the package body. If it is necessary to prepare metal leads or pads on the upper surface of the chip subsequently, it is necessary to polish it using chemical-mechanical polishing technology (not shown here).

[0064] The above embodiments are only used to illustrate the present invention and are not intended to limit the present invention. Those of ordinary skill in the relevant technical fields can also make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, all equivalent technical solutions also belong to the scope of the present invention. The patent protection scope of the present invention shall be defined by the claims.

Claims

1. A manufacturing method of a new type of middle layer of glass, characterized in that, The manufacturing method includes: Based on the first set of parameters, exciting an ultraviolet laser to scan the via hole area on the photosensitive glass substrate; Based on the second set of parameters, exciting an ultraviolet laser to scan the shallow trench area on the photosensitive glass substrate; Performing heat treatment on the photosensitive glass substrate; wherein, the heat treatment includes two stages, namely the first stage and the second stage. In the first stage, heating the photosensitive glass substrate to a first temperature at a first heating rate and maintaining the first temperature for a holding time to form silver nanoclusters in the modified area. In the second stage, heating the photosensitive glass substrate from the first temperature to a second temperature at a second heating rate and maintaining the second temperature for a holding time to generate a soluble lithium metasilicate crystal phase in the modified area; the modified area includes the via hole area and the shallow trench area; Etching the sample that has completed the heat treatment with a hydrofluoric acid solution, and applying ultrasonic vibration during the etching to enhance the etching selectivity of the lithium metasilicate crystal phase area to obtain a glass middle layer sample; wherein, the glass middle layer sample includes a photosensitive glass substrate and a redistribution layer and vias provided on the photosensitive glass substrate, the vias communicate with the redistribution layer, and the redistribution layer is embedded in the top of the photosensitive glass substrate; Cleaning and drying the glass middle layer sample, and mounting the chip on the surface of the glass middle layer to obtain a package, wherein the through-silicon via inside the chip in the package is aligned with the distal end of the redistribution layer; Filling the through-silicon via inside the chip, the redistribution layer, and the vias with a conductive adhesive to obtain a novel glass middle layer.

2. The manufacturing method of the novel glass middle layer according to claim 1, characterized in that, The first set of parameters includes a first laser wavelength, a first laser power, a first number of passes of the focal spot in the vertical direction, a first step, a first scanning line speed and a first number of repetitions on the same focal plane, and a filling area diameter; wherein, the filling area diameter corresponds to the required via hole diameter.

3. The novel glass middle layer and its manufacturing method according to claim 2, characterized in that, The first laser wavelength is 355 nm, the first laser power is 10 - 20 W, the first number of passes of the focal spot in the vertical direction is 80 - 120 times, the first step is 4 - 6 μm, the first scanning line speed and the first number of repetitions on the same focal plane are respectively set to 15 - 25 mm / s and 15 - 25 times, and the filling area diameter is 45 - 55 μm.

4. The manufacturing method of the novel glass middle layer according to claim 1, characterized in that, The second set of parameters includes a second laser wavelength, a second laser power, a second number of passes of the focal spot in the vertical direction, a second step, a second scanning line speed and a second number of repetitions on the same focal plane, and a filling pattern; wherein, the filling pattern has the required via hole diameter as the width, and the straight line length corresponds to the metal wire length of the redistribution layer.

5. The manufacturing method of the novel glass middle layer according to claim 4, characterized in that, The second laser wavelength is 355 nm, the second laser power is 6 - 10 W, the second number of passes of the focal spot in the vertical direction is 4 - 10 times, the second step is 8 - 12 μm, the second scanning line speed and the second number of repetitions on the same focal plane are respectively set to 15 - 25 mm / s and 40 - 60 times.

6. The manufacturing method of the novel glass middle layer according to claim 1, characterized in that, The first heating rate is 2 to 4 °C / min, the first temperature is 400 to 600 °C, the holding time at the first temperature is 0.75 to 1.5 h, the second heating rate is 0.5 to 1.5 °C / min, the second temperature is 500 to 700 °C, and the holding time at the second temperature is 0.75 to 1.5 h.

7. The manufacturing method of the novel glass middle layer according to claim 1, characterized in that, The concentration of the hydrofluoric acid solution is 7.5% to 12.5%, the temperature is 20 to 30 °C, the power of the ultrasonic vibration is 300 to 500 W, and the frequency is 35 to 45 kHz.

8. The manufacturing method of the novel glass middle layer according to claim 1, characterized in that, The diameter of the through hole and the width of the redistribution layer are both 100 ± 5 μm, and the length and depth of the redistribution layer are 1000 ± 5 μm and 100 ± 5 μm respectively.

9. The manufacturing method of the novel glass middle layer according to any one of claims 1 to 8, characterized in that, The method of filling the through silicon via, redistribution layer and through hole inside the chip with conductive adhesive is as follows: Place the package on the vacuum adsorption platform; According to the number and volume of the shallow grooves of the through hole, use a dropper to measure a sufficient amount of conductive adhesive and apply it to the upper surface of the chip; Start the vacuum system. Under the action of vacuum negative pressure, the conductive adhesive is quickly sucked into the through silicon via inside the chip and gradually flows through the redistribution layer and the through hole until the entire cavity is completely filled; Cure the conductive adhesive inside the package; Adopt the back thinning technology to remove the residual conductive adhesive on the upper and lower surfaces of the package.

10. A novel glass middle layer manufactured by the manufacturing method according to any one of claims 1 to 9.

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