Temperature control attenuator and temperature control attenuation radio frequency switch
Through the combination of the temperature-controlled bias current circuit and the bias voltage circuit, the attenuation of the MOS tube is controlled, which solves the problem of gain imbalance at different temperatures of the RF front end, and realizes the stable operation of the RF front end in a wide temperature range.
Patent Information
- Application Number
- CN202510270214.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-03-07
- Publication Date
- 2025-07-04
AI Technical Summary
The gain of the RF front end is uneven at high and low temperatures, resulting in insufficient high temperature gain or excessive low temperature gain.
The temperature-controlled bias current circuit is used to generate bias currents with different temperature coefficients, and the bias voltage circuit is converted into a gate voltage-controlled MOS tube to achieve accurate adjustment of the attenuation amount. Combined with the specific MOS tube topology and state control circuit, a temperature adaptive control closed-loop system is formed.
It effectively overcomes the impact of temperature changes on the characteristics of MOS tubes, ensures the stable operation of the attenuator under different temperature environments, and the circuit structure is simple, without the need for complex temperature detection and feedback mechanisms.
Smart Images
Figure CN120263145A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of integrated circuits, and particularly to a temperature-controlled attenuator and a temperature-controlled attenuator radio frequency switch. Background Art
[0002] In a radio frequency communication system, the radio frequency front end, as a key component, integrates multiple functional modules such as a radio frequency power amplifier, a low-noise amplifier, a radio frequency switch, and a controller. In practical applications, the radio frequency front end needs to operate stably within a temperature range of -40°C to 85°C or even wider. However, temperature changes will significantly affect the performance of each radio frequency module in the radio frequency front end, mainly manifested as a problem of reduced gain or increased insertion loss when the ambient temperature rises. This temperature dependence results in uneven performance of the radio frequency front end within the operating temperature range: insufficient gain may occur in a high-temperature environment, while stability and reliability problems may be caused by excessive gain in a low-temperature environment. Currently, the temperature compensation problem of the radio frequency front end remains an important technical challenge faced by the industry, and an effective solution is urgently needed to achieve temperature compensation of radio frequency performance and ensure stable operation of the system within the full temperature range. Summary of the Invention
[0003] The purpose of the present invention is to solve the problem of insufficient gain at high temperature or excessive gain at low temperature caused by uneven gain of the radio frequency front end in the prior art at high and low temperatures.
[0004] In a first aspect of the present invention, a temperature-controlled attenuator is provided, including:
[0005] A temperature-controlled bias current circuit that generates a bias current with different temperature coefficients according to external temperature changes;
[0006] A bias voltage circuit that generates a gate voltage according to the bias current;
[0007] An attenuator, where the attenuator includes a MOS transistor, and the MOS transistor adjusts the attenuation amount according to the gate voltage.
[0008] Further, the gate voltage includes a first gate voltage and a second gate voltage, and the attenuator includes a first MOS transistor, a second MOS transistor, and a third MOS transistor;
[0009] The source of the first MOS transistor is connected to the signal input terminal and the drain of the second MOS transistor. The source of the second MOS transistor is grounded, and the gate is connected to the first gate voltage. The drain of the first MOS transistor is connected to the signal output terminal and the drain of the third MOS transistor. The source of the third MOS transistor is grounded, and the gate is connected to the first gate voltage. The gate of the first MOS transistor is connected to the second gate voltage.
[0010] Further, the temperature-controlled bias current circuit includes a PTAT current source, a CTAT current source, a Bandgap circuit, and an integration circuit;
[0011] The CTAT current source generates a first current that decreases as the temperature increases;
[0012] The PTAT current source generates a second current that increases as the temperature increases;
[0013] The Bandgap circuit generates a third current that does not change with temperature;
[0014] The integration circuit linearly combines the first current, the second current, and the third current according to different preset ratios to generate bias currents with different temperature coefficients.
[0015] Further, the bias voltage circuit includes:
[0016] A first operational amplifier circuit, including a first operational amplifier and a first dummy MOS transistor, for generating a first gate voltage to control the first MOS transistor in the attenuator;
[0017] A second operational amplifier circuit, including a second operational amplifier and a second dummy MOS transistor, for generating a second gate voltage to control the second MOS transistor and the third MOS transistor in the attenuator.
[0018] Further, the first dummy MOS transistor has the same device size as the first MOS transistor;
[0019] The second dummy MOS transistor has the same device size as the second MOS transistor and the third MOS transistor.
[0020] In a second aspect of the present invention, a temperature-controlled attenuating RF switch is provided. The temperature-controlled attenuator as described in any one of the above is adopted, and further includes a fourth MOS transistor, a fifth MOS transistor, and a state control circuit;
[0021] The fourth MOS transistor and the fifth MOS transistor are connected to the first MOS transistor;
[0022] The state control circuit receives the gate voltage output by the bias voltage circuit and generates a corresponding gate control voltage according to an external control signal;
[0023] The first MOS transistor and the second MOS transistor form a first path, and the fourth MOS transistor and the fifth MOS transistor form a second path.
[0024] Further, the drain of the fourth MOS transistor is connected to the drain of the first MOS transistor, and the source is respectively connected to the drain of the fifth MOS transistor; the source of the fifth MOS transistor is grounded;
[0025] The source of the first MOS transistor is connected to a first radio frequency signal, the source of the fourth MOS transistor is connected to a second radio frequency signal, and the drain of the third MOS transistor is connected to a radio frequency output terminal.
[0026] Further, the gate of the first MOS transistor is connected to a first gate control voltage of a first path, and the gate of the fourth MOS transistor is connected to a first gate control voltage of a second path; the gate of the second MOS transistor is connected to a second gate control voltage of the first path, and the gate of the fifth MOS transistor is connected to a second gate control voltage of the second path; the gate of the third MOS transistor is connected to a common terminal control voltage.
[0027] Further, the control signals received by the state control circuit include a first control signal and a second control signal;
[0028] The state control circuit performs logic processing on the first gate voltage, the second gate voltage, the first control signal, and the second control signal to generate different gate control voltages.
[0029] Further, when the first control signal is at a high level and the second control signal is at a low level, the first path is turned on and the second path is in a high impedance state;
[0030] When the first control signal is at a low level and the second control signal is at a high level, the first path is in a high impedance state and the second path is turned on.
[0031] Compared with the prior art, the present invention has at least the following beneficial effects: the temperature control bias current circuit automatically responds to external temperature changes to generate a compensation current, and then the bias voltage circuit converts it into an appropriate gate voltage to control the MOS transistor, realizing precise adjustment of the attenuation amount. It not only effectively overcomes the influence of temperature changes on the characteristics of the MOS transistor, ensures the stable operation of the attenuator in different temperature environments, but also has a simple circuit structure and does not require a complex temperature detection and feedback mechanism. Description of the Drawings
[0032] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained as provided.
[0033] Figure 1 It is a module diagram of a temperature control attenuator in an embodiment of the present invention;
[0034] Figure 2 It is a circuit schematic diagram of an attenuator in an embodiment of the present invention;
[0035] Figure 3 Schematic diagram of internal processing in the temperature-controlled bias current circuit according to an embodiment of the present invention;
[0036] Figure 4a Schematic diagram of the current generated by the CTAT current source in the temperature-controlled bias current circuit according to an embodiment of the present invention;
[0037] Figure 4b Schematic diagram of the current generated by the PTAT current source in the temperature-controlled bias current circuit according to an embodiment of the present invention;
[0038] Figure 4c Schematic diagram of the current generated by the Bandgap circuit in the temperature-controlled bias current circuit according to an embodiment of the present invention;
[0039] Figure 5a Circuit diagram of the first operational amplifier circuit in the bias voltage circuit according to an embodiment of the present invention;
[0040] Figure 5b Circuit diagram of the second operational amplifier circuit in the bias voltage circuit according to an embodiment of the present invention;
[0041] Figure 6 Module diagram of the temperature-controlled RF switch according to an embodiment of the present invention;
[0042] Figure 7 Circuit diagram of the double-throw switch according to an embodiment of the present invention;
[0043] Figure 8 Schematic diagram of the working state of the double-throw switch according to an embodiment of the present invention. Detailed implementation manners
[0044] The present invention will be described in more detail below with reference to the schematic diagrams, in which the preferred embodiments of the present invention are shown. It should be understood that those skilled in the art can modify the present invention described herein while still achieving the advantageous effects of the present invention. Therefore, the following description should be understood as being widely known to those skilled in the art and not as a limitation on the present invention.
[0045] It should be noted that in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprising", "including" or any other variation thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or elements inherent to such process, method, article or device.
[0046] The present invention will be described more specifically by way of example with reference to the accompanying drawings in the following paragraphs. As will be described below, the advantages and features of the present invention will become clearer. It should be noted that the accompanying drawings are all in very simplified forms and use non-precise scales, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention.
[0047] Embodiment 1
[0048] This embodiment provides a temperature-controlled attenuator. Please refer to Figure 1 , including:
[0049] A temperature-controlled bias current circuit that generates a bias current with different temperature coefficients according to changes in the external temperature;
[0050] A bias voltage circuit that generates a gate voltage according to the bias current;
[0051] An attenuator, the attenuator includes a MOS transistor, and the MOS transistor adjusts the attenuation amount according to the gate voltage.
[0052] Specifically, in this embodiment, the temperature-controlled bias current circuit monitors and responds to changes in the external temperature in real time, converts the temperature information into a current signal with a specific temperature coefficient, and then the bias voltage circuit converts these temperature-related current signals into an accurate gate voltage. Finally, by controlling the gate voltage of the MOS transistor, its conduction characteristics are dynamically adjusted, so as to automatically achieve the optimal attenuation amount at different temperatures, forming a complete temperature adaptive control closed-loop system.
[0053] Further, the gate voltage includes a first gate voltage and a second gate voltage, and the attenuator includes a first MOS transistor, a second MOS transistor and a third MOS transistor;
[0054] The source of the first MOS transistor is connected to the signal input terminal and the drain of the second MOS transistor. The source of the second MOS transistor is grounded, and the gate is connected to the first gate voltage. The drain of the first MOS transistor is connected to the signal output terminal and the drain of the third MOS transistor. The source of the third MOS transistor is grounded, and the gate is connected to the first gate voltage. The gate of the first MOS transistor is connected to the second gate voltage.
[0055] Specifically, traditional RF attenuators include a PI-type structure and a T-type structure, both of which are composed of three resistors. This kind of attenuator has a simple structure, but its attenuation amount is related to the resistance value of the resistor and cannot change with temperature. In this embodiment, the resistor in the traditional attenuator is replaced with a MOS transistor, so that the attenuation amount of the attenuator can be controlled by controlling the on-resistance of the MOS transistor. Figure 2Shown is a PI attenuator composed of three NMOS transistors. By controlling the gate voltages of the first MOS transistor M0, the second MOS transistor M1, and the third MOS transistor M2 (i.e., the first gate voltage Vse and the second gate voltage Vsh), the attenuation of the attenuator can be controlled.
[0056] Further, please refer to Figure 3 、 Figures 4a - 4c , the temperature-controlled bias current circuit includes a PTAT current source, a CTAT current source, a Bandgap circuit, and an integration circuit;
[0057] The CTAT current source generates a first current that decreases as the temperature increases;
[0058] The PTAT current source generates a second current that increases as the temperature increases;
[0059] The Bandgap circuit generates a third current that does not change with temperature;
[0060] The integration circuit linearly combines the first current, the second current, and the third current according to different preset ratios to generate bias currents with different temperature coefficients.
[0061] Specifically, Figure 4a in, Ictat represents a first current output by the CTAT current source circuit. This current decreases as the chip temperature increases and has a negative temperature coefficient. Figure 4b in, Iptat represents a second current output by the PTAT current source circuit. This current increases as the chip temperature increases and has a positive temperature coefficient. Figure 4c in, Ic is the third current, representing a current with a zero temperature coefficient. This current is generated by the Bandgap circuit. By linearly combining the above three currents with different temperature coefficients, a bias current with any temperature coefficient can be obtained, as shown in Figure 3 . Here, k1 to k3 are coefficients selected according to specific requirements.
[0062] Further, please refer to Figure 5a and Figure 5b , the bias voltage circuit includes:
[0063] The first operational amplifier circuit includes a first operational amplifier and a first dummy MOS transistor, and is used to generate a first gate voltage for controlling the first MOS transistor in the attenuator;
[0064] The second operational amplifier circuit includes a second operational amplifier and a second dummy MOS transistor, and is used to generate a second gate voltage for controlling the second MOS transistor and the third MOS transistor in the attenuator.
[0065] Further, the first dummy MOS transistor has the same device size as the series MOS transistors;
[0066] The second dummy MOS transistor has the same device size as the parallel MOS transistors.
[0067] Specifically, in Figure 2 the shown PI attenuator, the first MOS transistor M0 is equivalent to a series resistor (Rse), and the second MOS transistor M1 and the third MOS transistor M2 are equivalent to two parallel resistors (Rsh) with equal resistance values. The gate control voltage of the first MOS transistor M0 is the first gate voltage Vse, and the gate control voltages of the second MOS transistor M1 and the third MOS transistor M2 are the second gate voltage Vsh.
[0068] The first gate voltage Vse and the second gate voltage Vsh are respectively given by Figure 5a and Figure 5b the shown circuits. In the figure, Iref1 to Iref4 are four reference currents generated from Figure 4. Iref2 and Iref4 are bias currents with zero temperature coefficient (two third currents), Iref1 is a bias current with negative temperature coefficient (the first current), and Iref3 is a bias current with positive temperature coefficient (the second current). The first dummy MOS transistor M0d and the second dummy MOS transistor M1d are respectively Figure 2 the Dummy devices of the first MOS transistor M0 and the second MOS transistor M1 and the third MOS transistor M2 in
[0069] Please refer to Figure 5a , when the operating temperature of the RF front end increases, the first current Iref1 decreases and the voltage V1 decreases. The negative feedback loop composed of the first operational amplifier OP1 and the first dummy MOS transistor M0d will increase the first gate voltage Vse and decrease the voltage V2, and finally stabilize at V2 = V1. Since the first gate voltage Vse increases, the equivalent resistance of the first dummy MOS transistor M0d decreases. Since the first dummy MOS transistor M0d is the Dummy device of the first MOS transistor M0 and their gate voltages are both the first gate voltage Vse, the equivalent resistance of the first MOS transistor M0 also decreases synchronously.
[0070] Similarly, please refer to Figure 5b, when the operating temperature of the RF front-end increases, the current of the second current Iref3 increases, and the voltage V3 rises. The negative feedback loop composed of the second operational amplifier OP2 and the second dummy MOS transistor M1d will cause the voltage of the second gate Vsh to decrease and the voltage V4 to increase, and finally stabilize at V4 = V3. Since the voltage of the second gate Vsh decreases, the equivalent resistance of the second dummy MOS transistor M1d increases. Since the second dummy MOS transistor M1d is the Dummy device of the second MOS transistor M1 and the third MOS transistor M2, and the gate voltages of the three are the same second gate voltage Vsh, the equivalent resistances of the second MOS transistor M1 and the third MOS transistor M2 also increase synchronously.
[0071] As the temperature rises, the equivalent resistance of the first MOS transistor M0 decreases, the equivalent resistances of the second MOS transistor M1 and the third MOS transistor M2 increase, and the corresponding attenuation decreases. Conversely, as the temperature decreases, the attenuation will increase. The relationship between this attenuation and temperature change is exactly opposite to the trend of the gain of RF modules such as power amplifiers, low-noise amplifiers, and RF switches changing with temperature. Therefore, this temperature-controlled attenuator can well compensate for the change in the gain of the RF module caused by temperature change.
[0072] Embodiment 2
[0073] In the second aspect of the present invention, a temperature-controlled attenuating RF switch is provided. Please refer to Figures 6 - 8 , and a temperature-controlled attenuator as described in Embodiment 1 is adopted, and further includes a fourth MOS transistor, a fifth MOS transistor and a state control circuit;
[0074] The fourth MOS transistor and the fifth MOS transistor are connected to the first MOS transistor;
[0075] The state control circuit receives the gate voltage output by the bias voltage circuit and generates a corresponding gate control voltage according to an external control signal;
[0076] The first MOS transistor and the second MOS transistor form a first path, and the fourth MOS transistor and the fifth MOS transistor form a second path.
[0077] Specifically, in this embodiment, the PI-type temperature-controlled attenuator in Embodiment 1 is extended by adding a fourth NMOS transistor M3 and a fifth MOS transistor M4, and a Figure 7 shown temperature-controlled single-pole double-throw (SPDT) RF switch can be obtained. While realizing the function of a single-pole double-throw switch, this RF switch has the function of a temperature-controlled attenuator.
[0078] Furthermore, the drain of the fourth MOS transistor is connected to the drain of the first MOS transistor, and the source is respectively connected to the drain of the fifth MOS transistor; the source of the fifth MOS transistor is grounded;
[0079] The source of the first MOS transistor is connected to a first radio frequency signal, the source of the fourth MOS transistor is connected to a second radio frequency signal, and the drain of the third MOS transistor is connected to a radio frequency output terminal.
[0080] Furthermore, the gate of the first MOS transistor is connected to a first gate control voltage of a first path, and the gate of the fourth MOS transistor is connected to a first gate control voltage of a second path; the gate of the second MOS transistor is connected to a second gate control voltage of the first path, and the gate of the fifth MOS transistor is connected to a second gate control voltage of the second path; the gate of the third MOS transistor is connected to a common terminal control voltage.
[0081] Specifically, Figure 7 In, RFIN1 and RFIN2 are two radio frequency input ports, and RFOUT is a radio frequency output port. It has two operating states. One is that RFIN1 to RFOUT (i.e., the first path) is conductive, and the impedance between RFIN2 and RFOUT (i.e., the second path) is high; the other is that RFIN2 to RFOUT is conductive, and the impedance between RFIN1 and RFOUT is high. Figure 8 The figure shows a circuit schematic diagram when the first path is conductive and the second path is in a high impedance state. In this state, the first MOS transistor M0 is equivalent to a series resistor Rse, and the second MOS transistor M1 and the third MOS transistor M2 are equivalent to a parallel resistor Rsh. M0 to M2 form a PI temperature-controlled attenuator between RFIN1 and RFOUT. M3 is in the OFF state, and M4 is in the ON state, thereby achieving good isolation between RFIN2 and RFOUT.
[0082] Furthermore, the control signals received by the state control circuit include a first control signal and a second control signal;
[0083] The state control circuit performs logical processing on the first gate voltage, the second gate voltage, the first control signal, and the second control signal to generate different gate control voltages.
[0084] Furthermore, when the first control signal is at a high level and the second control signal is at a low level, the first path is conductive and the second path is in a high impedance state;
[0085] When the first control signal is at a low level and the second control signal is at a high level, the first path is in a high impedance state and the second path is conductive.
[0086] Specifically, the state control circuit is the state control circuit of the RF switch, and the first control signal SEL1 and the second control signal SEL2 are switch state control signals. When SEL1 is at a high level (VH) and SEL2 is at a low level (VL), Vse1 = Vse, Vsh1 = Vshc = Vsh, Vse2 = VL, and Vsh2 = VH. At this time, the connection between RFIN1 and RFOUT is conducted, and the connection between RFIN2 and RFOUT is at a high impedance. When SEL1 is at a low level (VL) and SEL2 is at a high level (VH), Vse1 = VL, Vsh1 = VH, Vse2 = Vse, and Vsh2 = Vshc = Vsh. At this time, the connection between RFIN2 and RFOUT is conducted, and the connection between RFIN1 and RFOUT is at a high impedance.
[0087] By designing a temperature-controlled bias current circuit to generate bias currents with different temperature coefficients, and converting them into appropriate gate voltages through a bias voltage circuit to control the attenuation of the MOS transistor, combined with a specific MOS transistor topology and state control circuit, not only the precise temperature compensation of the RF signal attenuation is achieved, but also it can be flexibly configured into an RF switch with temperature-controlled attenuation function, enabling the RF front-end to maintain stable gain characteristics within a wide temperature range; at the same time, this solution uses a combination of PTAT, CTAT, and Bandgap circuits to generate the required temperature characteristics, combined with the design of an operational amplifier circuit and dummy MOS transistors, ensuring the high-precision control and stability of the circuit.
[0088] The above uses specific examples to elaborate on the present invention, which is only used to help understand the present invention and is not intended to limit the present invention. For those skilled in the art of the present invention, according to the idea of the present invention, several simple deductions, deformations, or substitutions can also be made.
Claims
1. A temperature-controlled attenuator, characterized in that, Comprising: A temperature-controlled bias current circuit that generates bias currents with different temperature coefficients according to external temperature changes; A bias voltage circuit that generates a gate voltage according to the bias current; An attenuator, the attenuator includes MOS transistors, and the MOS transistors adjust the attenuation amount according to the gate voltage.
2. The temperature-controlled attenuator according to claim 1, characterized in that, The gate voltage includes a first gate voltage and a second gate voltage, and the attenuator includes a first MOS transistor, a second MOS transistor, and a third MOS transistor; The source of the first MOS transistor is connected to the signal input terminal and the drain of the second MOS transistor. The source of the second MOS transistor is grounded, and the gate is connected to the first gate voltage. The drain of the first MOS transistor is connected to the signal output terminal and the drain of the third MOS transistor. The source of the third MOS transistor is grounded, and the gate is connected to the first gate voltage. The gate of the first MOS transistor is connected to the second gate voltage.
3. The temperature-controlled attenuator according to claim 1, wherein The temperature-controlled bias current circuit includes a PTAT current source, a CTAT current source, a Bandgap circuit, and an integration circuit; The CTAT current source generates a first current that decreases as the temperature increases; The PTAT current source generates a second current that increases as the temperature increases; The Bandgap circuit generates a third current that does not change with temperature; The integration circuit linearly combines the first current, the second current, and the third current according to different preset ratios to generate bias currents with different temperature coefficients.
4. The temperature-controlled attenuator according to claim 1, wherein The bias voltage circuit includes: A first operational amplifier circuit, including a first operational amplifier and a first dummy MOS transistor, for generating a first gate voltage that controls the first MOS transistor in the attenuator; A second operational amplifier circuit, including a second operational amplifier and a second dummy MOS transistor, for generating a second gate voltage that controls the second MOS transistor and the third MOS transistor in the attenuator.
5. The temperature-controlled attenuator according to claim 4, wherein The first dummy MOS transistor has the same device size as the first MOS transistor; The second dummy MOS transistor has the same device size as the second MOS transistor and the third MOS transistor.
6. A temperature-controlled attenuating RF switch, which uses the temperature-controlled attenuator described in any one of claims 1-5, is characterized in that, It further includes a fourth MOS transistor, a fifth MOS transistor, and a state control circuit; The fourth MOS transistor and the fifth MOS transistor are connected to the first MOS transistor; The state control circuit receives the gate voltage output by the bias voltage circuit and generates a corresponding gate control voltage according to an external control signal; The first MOS transistor and the second MOS transistor form a first path, and the fourth MOS transistor and the fifth MOS transistor form a second path.
7. The temperature-controlled attenuating RF switch according to claim 6, wherein The drain of the fourth MOS transistor is connected to the drain of the first MOS transistor, and the source is respectively connected to the drain of the fifth MOS transistor. The source of the fifth MOS transistor is grounded; The source of the first MOS transistor is connected to a first radio frequency signal, the source of the fourth MOS transistor is connected to a second radio frequency signal, and the drain of the third MOS transistor is connected to the radio frequency output terminal.
8. The temperature-controlled attenuating RF switch according to claim 7, characterized in that, The gate of the first MOS transistor is connected to the first gate control voltage of the first path, and the gate of the fourth MOS transistor is connected to the first gate control voltage of the second path; the gate of the second MOS transistor is connected to the second gate control voltage of the first path, and the gate of the fifth MOS transistor is connected to the second gate control voltage of the second path; the gate of the third MOS transistor is connected to the common terminal control voltage.
9. The temperature-controlled attenuating RF switch according to claim 6, wherein The control signals received by the state control circuit include a first control signal and a second control signal; The state control circuit performs logical processing on the first gate voltage, the second gate voltage, the first control signal, and the second control signal to generate different gate control voltages.
10. The temperature-controlled attenuating RF switch according to claim 9, wherein When the first control signal is at a high level and the second control signal is at a low level, the first path is turned on and the second path is in a high impedance state; When the first control signal is at a low level and the second control signal is at a high level, the first path is in a high impedance state and the second path is turned on.