Large-current high-speed rising current source circuit

Abstract

The invention discloses a large-current high-speed rising current source circuit, which belongs to the technical field of power electronics and comprises an AC-to-DC module, a filtering module, an energy storage module, a high-speed driving module, an acquisition module and a communication module which are connected through standardized interfaces. Through modular integration, three-stage driving optimization, super capacitor energy storage and high-precision acquisition and communication protocol technologies, the engineering breakthrough that the current rise time is less than 1ms and the ripple is less than 10mV is realized, and multi-dimensional optimization is realized in the aspects of cost, stability and energy efficiency.

Description

Technical Field

[0001] The present invention relates to the field of power electronics technology, and specifically relates to a high-current high-speed rising current source circuit. Background Art

[0002] A high-current high-speed rising current source circuit is a circuit that converts mains electricity into high current in a short time.

[0003] In the fields of power electronics and high-power energy systems, the breakthrough of the limit of the current rising speed (di / dt) has always been the core driving force for promoting the upgrade of cutting-edge equipment. With the increasingly stringent requirements for transient response in fields such as electromagnetic catapult systems, new energy ultra-fast charging piles (such as 480kW charging piles), and industrial pulsed lasers, traditional technical solutions generally face the triple contradictions of efficiency, cost, and reliability when achieving sub-millisecond (<1ms) current rise. Taking a typical application scenario as an example: the 800V high-voltage platform of new energy vehicles requires the charging module to increase the current from zero to more than 800A within 1ms (di / dt>0.8MA / s) to achieve a "second-level" energy replenishment experience; while the electromagnetic armor interception system needs to release dozens of kiloamperes of current within 0.5ms to precisely offset the high-speed incoming target. However, the existing technology is limited by the switching loss of semiconductor devices, the cumulative effect of parasitic inductance, and the thermal failure threshold, and it is difficult to achieve the above performance indicators under the premise of controllable cost. The specific technical bottlenecks are reflected in the following dimensions:

[0004] 1. The physical game between the switching loss and speed of semiconductor devices

[0005] The current mainstream solutions rely on silicon-based IGBTs or SiC MOSFETs to build a fast switching link, but both have inherent defects: Although IGBTs are low-cost (about 10-50 per single device), the tail current phenomenon of IGBTs leads to the turn-off loss accounting for more than 40%, and it is easy to cause a sudden rise in junction temperature (>150°C / pulse) in the 1ms-level fast rising scenario; while SiC MOSFETs have ultra-fast switching characteristics (the theoretical di / dt can reach 100kA / μs), but their high price (the price of the same power level is 3-5 times that of IGBTs) and the problem of dynamic current sharing (the current deviation between parallel chips >15%) seriously restrict large-scale applications. For example, although a certain 800V DC fast charging pile using a full SiC solution can achieve a 1.2ms current rise, the cost of the power unit accounts for up to 55%, and a multi-stage liquid cooling circuit needs to be configured to cope with the chip hot spot effect (local temperature difference >40°C).

[0006] 2. The fatal restriction of parasitic parameters on transient characteristics

[0007] During the current rise process from nanoseconds to microseconds, the voltage spikes (L·di / dt) caused by circuit parasitic inductance (such as PCB traces and wire bonds) become a killer of system reliability. Taking a certain type of 10kA / 1ms solenoid valve drive module as an example, its traditional design uses multiple IGBTs in parallel, but the parasitic inductance of the busbar (>20nH) causes the peak turn-off overvoltage to exceed 2.5kV (reaching 200% of the device's rated voltage), forcing the use of expensive high-voltage-resistant SiC modules or complex RC buffer circuits, increasing the system volume and cost by more than 30%. In addition, the high-frequency skin effect (such as the effective cross-sectional area of copper conductors decreasing by 60% at 100kHz) further exacerbates conductor losses, forcing the use of silver-plated copper bars or hollow wires, increasing the material cost by 2-3 times.

[0008] 3. Thermal runaway risk and the cost dilemma of heat dissipation design

[0009] The instantaneous power density (>10kW / cm 3 ) generated by high-current transient operation poses extreme requirements for thermal management. Traditional air-cooling or single-sided liquid-cooling solutions have too high thermal resistance (>0.3K / W), resulting in the junction temperature of the device fluctuating by more than 80°C under continuous pulse conditions, accelerating the fatigue fracture of the bond wires. Although double-sided cooling modules (such as Infineon's HybridPACK TM Drive) can reduce the thermal resistance to 0.15K / W, their precision microchannel processing and ceramic substrate technology cause the packaging cost to soar (70% higher than traditional modules), and it is difficult to be compatible with high-frequency magnetic field environments (such as wireless charging modules need to avoid eddy current losses in the metal cold plate).

[0010] 4. Dual challenges of control accuracy and system robustness

[0011] To achieve precise control of kiloampere-level current within the sub-millisecond time scale, it is necessary to overcome problems such as signal transmission delay (>10ns), insufficient sensor bandwidth (the response time of traditional Hall sensors >1μs), and multi-module coordination errors (such as a current imbalance >20% caused by a drive signal skew >5ns). For example, a certain nuclear fusion device uses a multi-channel thyristor parallel trigger scheme, and the current rise edge jitters up to ±8% due to the synchronization error of the gate drive signals, seriously reducing the plasma confinement stability. Summary of the Invention

[0012] The purpose of the present invention is to provide a high-current high-speed rising current source circuit to solve the problems of too long rise time, too large ripple, too high cost, and poor stability proposed in the above background technology.

[0013] To achieve the above invention purpose, the present invention adopts the following technical solution: A high-current high-speed rising current source circuit.

[0014] Preferably, a high-current high-speed rising current source circuit includes: an AC-DC conversion module (101), a filtering module (102), an energy storage module (103), a high-speed driving module (104), a collection module (105), and a communication module (106), and each module is connected through a standardized interface.

[0015] Preferably, the AC-DC conversion module (101) converts an AC power input into a DC power input, with an adjustable voltage range, typically 100 - 240VAC, and an adjustable output, typically 48V DC.

[0016] Preferably, the filtering module (102) includes an LC filter, with a cut-off frequency set to 1kHz and a second-order Butterworth low-pass structure. Calculation parameters: Inductance L = 1 / (2πfC) → assuming C = 10μF, L ≈ 15.9mH (Coilcraft XAL7040-153M can be selected). Capacitance C = 1 / (2πfL) → if L = 10mH, C ≈ 15.9μF (AVX Tantalum 15μF / 50V can be selected). The actual selection needs to consider the current-carrying capacity (such as L ≥ 500A instantaneous current). Layout optimization: The inductor and capacitor are close to the AC-DC conversion module (101) to shorten the high-frequency path; a multi-layer PCB is used, and the power layer and the ground layer are adjacent to reduce parasitic inductance.

[0017] Preferably, the energy storage module (103) is designed using a supercapacitor bank: The capacity is optional, typically 10F, and it supports instantaneous discharge of 500A and above. 10 2.7V / 1F supercapacitors (such as low internal resistance supercapacitors) are connected in series, with a total voltage of 27V and a capacity of 1F. A parallel voltage equalizing resistor (such as 10kΩ / 0.5W) is used to prevent overvoltage, and a series fuse (such as Littelfuse 0207 series) is used for circuit protection. According to the calculation of the supercapacitor leakage current, ensure that the voltage deviation of each capacitor is less than 5%. Thermal management: The supercapacitor is surface-mounted with an aluminum heat sink, and the temperature is controlled <65°C through forced air cooling (such as Delta AFB0412HH). An NTC thermistor (such as EPCOS B57560G104F) is used to monitor the temperature in real time.

[0018] Preferably, the high-speed driving module (104) adopts a three-stage driving circuit:

[0019] The first-stage driving (differential amplification): The triodes VT1 / VT2 are selected as high-speed bipolar transistors (such as NXP BC847B), R1 and R2 are 10kΩ, the gain is about 1, R3 is 10Ω, and R4 is 10Ω.

[0020] The input signal is filtered by RC (R5 = 68kΩ, C1 = 100μF, R6 = 2.4kΩ, C2 = 100μF) to suppress noise.

[0021] Second - stage drive (push - pull amplification): MOSFETs (such as high - speed MOSFETs) are selected for VT3 / VT4, R7 is 1.2 kΩ, R8 is 510 Ω, and C5 is 15 pF to accelerate the signal edge.

[0022] The output terminal is filtered by a circuit with a capacitor C6 of 15 pF and a resistor R10 of 1.2 kΩ.

[0023] Third - stage drive (parallel amplification): N = 10 MOSFETs (such as IRFP460) are evenly divided into 5 branches in parallel. Each MOSFET is paralleled with a gate resistor of 10 Ω. Each branch is serially connected with two protection resistors (such as Vishay WSLP0603) of 0.33 Ω and paralleled with a current - limiting resistor of 10 Ω. The gate drive resistor (such as 10 Ω) optimizes the switching speed and reduces oscillation.

[0024] Among them, the first - stage drive realizes signal differential amplification, the second - stage drive accelerates the signal edge through a push - pull structure, and the third - stage drive improves the current - carrying capacity by paralleling MOSFETs.

[0025] Preferably, the acquisition module (105) includes current acquisition and voltage acquisition: For current acquisition, a Hall sensor (such as LEM LA55 - P) is used to detect the output current with an accuracy of ±0.1%. The signal is input to the ADC (such as ADI AD7606) with a resolution of 16 bits after being filtered by RC (R = 1 kΩ, C = 10 nF). For voltage acquisition, a differential amplifier circuit (such as INA128) is used to amplify the output voltage with a gain of 100 and a resolution of 1 mV. A 20 kΩ resistor is serially connected on the input side, and a 100 pF capacitor is paralleled to suppress high - frequency noise.

[0026] Preferably, the communication module (106) includes: Interface implementation: For RS - 232 / RS - 485, an ADM2485 isolation transceiver is used, and a W5500 chip is selected for the LAN interface. The Modbus protocol stack is transplanted to the STM32F407 microcontroller, and the register mapping is as follows: 0x0000: Current set value (0 - 1000 A); 0x0001: Voltage set value (0 - 50 V); 0x0002: Output status (0 / 1). Anti - interference design: The communication line uses a twisted - pair shielded cable, and the shielding layer is grounded at a single point. The RS - 485 bus is terminated with a 120 Ω resistor, and the baud rate is set to 115200 bps.

[0027] The beneficial effects of the present invention are as follows: In a prototype of a new energy ultra-fast charging pile, this technology enables the current rise time from 0 to 800 A to be only 0.85 ms (2.3 times faster than the industry benchmark level), the unit power cost to decrease by 42%, and the failure rate throughout the life cycle to be lower than 50 ppm. In the military field, after applying this technology to an electromagnetic railgun drive module, the 1 kA-level current rise time has been successfully compressed from 2.1 ms to 0.92 ms, the kinetic energy conversion efficiency has been increased to 38% (traditional solution ≤ 25%), and at the same time, the EMI radiation has been reduced by 18 dB. This breakthrough not only opens up a new path for the miniaturization and low energy consumption of high-power devices, but also accelerates the commercialization process of trillion-dollar markets such as ultra-fast charging infrastructure and pulsed medical equipment. Brief Description of the Drawings

[0028] Figure 1 It is the overall system block diagram of the present invention.

[0029] Figure 2 It is the circuit schematic diagram of the high-speed drive module of the present invention.

[0030] Figure 3 It is the front view of the present invention.

[0031] Figure 4 It is the side view of the present invention.

[0032] Figure 5 It is the rear view of the present invention.

[0033] Figure 6 It is the schematic diagram of the power supply structure of the present invention.

[0034] In the figure: 101. AC to DC module, 102. Filter module, 103. Energy storage module, 104. High-speed drive module, 105. Acquisition module, 106. Communication module. Detailed Embodiments

[0035] Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, it should be understood that these descriptions are merely exemplary and are not intended to limit the scope of the present invention. In the following detailed description, for the sake of explanation, many specific details are set forth to provide a comprehensive understanding of the embodiments of the present invention. However, obviously, one or more embodiments can also be implemented without these specific details. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessarily confusing the concepts of the present invention.

[0036] The terms used herein are merely for describing specific embodiments and are not intended to limit the present invention. The terms "including", "comprising", etc. used herein indicate the presence of the described features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0037] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein should be interpreted as having a meaning consistent with the context of this specification, and should not be interpreted in an idealized or overly rigid manner.

[0038] In cases where expressions similar to "at least one of A, B, and C, etc." are used, generally, it should be interpreted according to the meaning commonly understood by those skilled in the art (for example, "a system having at least one of A, B, and C" should include, but not be limited to, a system having only A, only B, only C, having A and B, having A and C, having B and C, and / or having A, B, and C, etc.).

[0039] In the fields of power electronics and high-power energy systems, the breakthrough of the limit of the current rising speed (di / dt) has always been the core driving force for promoting the upgrade of cutting-edge equipment. With the increasingly stringent requirements for transient response in fields such as electromagnetic catapult systems, new energy ultra-fast charging piles (such as 480kW charging piles), and industrial-grade pulsed lasers, traditional technical solutions generally face a triple contradiction of efficiency, cost, and reliability when achieving sub-millisecond (<1ms) current ramping. Taking typical application scenarios as an example: the 800V high-voltage platform of new energy vehicles requires the charging module to increase the current from zero to more than 800A within 1ms (di / dt > 0.8MA / s) to achieve a "second-level" energy replenishment experience; while the electromagnetic armor interception system needs to release tens of thousands of amperes of current within 0.5ms to precisely offset a high-speed incoming target. However, the existing technologies are limited by the switching losses of semiconductor devices, the cumulative effect of parasitic inductance, and the thermal failure threshold, and it is difficult to achieve the above performance indicators under the premise of controllable cost.

[0040] Based on the above problems, embodiments of the present invention provide a high-current high-speed rising current source circuit. By modular integration processing, the cost of the high-current high-speed rising power supply is reduced. By equipping the energy storage module (102) with a voltage equalization circuit, the stability of the output current of the current source and the instantaneous current rising rate are improved. The three-stage drive circuit of the high-speed drive module (104) realizes current step-by-step amplification. In addition, in the series three-stage drive circuit, a RC filter circuit composed of the fifth resistor R5, the sixth resistor R6, and two capacitors, the third capacitor C3 and the fourth capacitor C4, is connected in series between the output terminal of the first-stage drive and the input terminal of the second-stage drive. A filter circuit composed of the sixth capacitor C6 and the tenth resistor R10 is connected in series between the output terminal of the second-stage drive and the input terminal of the third-stage drive to filter the circuit after drive amplification, thereby reducing the ripple, stabilizing the current value, protecting the circuit, and improving the quality of the output current.

[0041] Specifically, an embodiment of the present invention provides a high-current high-speed rising current source circuit. Among them, the current source includes an AC-DC conversion module (101), a filtering module (102), an energy storage module (103), a high-speed driving module (104), a collection module (105), and a communication module (106) connected in series in sequence. The energy storage module (103) is a supercapacitor bank, configured with a voltage equalization circuit, supporting instantaneous high-current discharge; the high-speed driving module (104) adopts a three-stage driving circuit, including a differential amplification circuit, a push-pull amplification circuit, and a parallel MOSFET driving and amplification circuit.

[0042] To make the objectives, technical solutions, and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below with reference to specific embodiments and the accompanying drawings.

[0043] Figure 1 Shows a modular structure diagram of a high-current high-speed rising current source circuit according to an embodiment of the present invention.

[0044] As Figure 1 shown, the power supply may include an AC-DC conversion module (101), a filtering module (102), an energy storage module (103), a high-speed driving module (104), a collection module (105), and a communication module (106) connected in series in sequence to form a complete current source.

[0045] Specifically, the AC-DC conversion module (101) converts the incoming mains power into a DC power supply; the incoming DC power supply is low-pass filtered through the filtering module (102). The filtering module includes an LC filter, with the cut-off frequency set to 1 kHz, adopting a second-order Butterworth low-pass structure. Calculating the parameters: Inductance L = 1 / (2πfC) → Assuming C = 10 μF, L ≈ 15.9 mH, Capacitance C = 1 / (2πfL) → If L = 10 mH, C ≈ 15.9 μF, which can effectively suppress high-frequency noise, reduce ripple, and improve system stability.

[0046] Specifically, the input end of the energy storage module (103) is connected in series with the output end of the filtering module (102). After the electric energy is stored in the capacitor of the energy storage module (103), it can support instantaneous large-current discharge. After the capacitor bank is turned on, the electric energy enters the high-speed drive module (104) from the output end of the energy storage module (103); the high-speed drive module (104) is divided into three-stage drive amplification circuits. The first-stage drive is a differential amplification circuit, which consists of the first transistor VT1, the second transistor VT2, the first resistor R1, the second resistor R2, the third resistor R3, and the fourth resistor R4. Among them, the first resistor R1 and the second resistor R2 are 10 kΩ gain resistors with a gain of about 1, and the third resistor R3 and the fourth resistor R4 are 10 Ω protection resistors. The second-stage drive is a push-pull amplification circuit, which consists of the amplification unit transistors, the third transistor VT3, the fourth transistor VT4, the load resistors, the seventh resistor R7 and the eighth resistor R8, and the accelerating signal edge capacitor, the fifth capacitor C5. Among them, the seventh resistor R7 is 1.2 kΩ, the eighth resistor R8 is 510 Ω, and the fifth capacitor C5 is 15 pF. The third-stage drive is a parallel amplification circuit, which is composed of N = 10 transistors evenly divided into 5 branches in parallel. Each transistor is connected in parallel with a gate resistor of 10 Ω that can optimize the switching speed and reduce oscillation. Each branch is connected in series with two protection resistors of 0.33 Ω. At the same time, each branch is connected in parallel with a current-limiting resistor of 10 Ω.

[0047] Among them, the first-stage drive realizes signal differential amplification, the second-stage drive accelerates the signal edge through a push-pull structure, and the third-stage drive disperses the current load through the parallel structure of multiple transistors, reducing the thermal stress of a single transistor, thereby improving the life and stability of the entire system; at the same time, by changing the number of parallel transistors and the resistance value of the current-sharing resistor, the output current range of the current source can be easily expanded.

[0048] According to the embodiment of the present invention, the electric energy enters the acquisition module (105) after three-stage drive amplification. The acquisition module (105) includes current acquisition and voltage acquisition; the current acquisition can detect the output current through a Hall current sensor with an accuracy of ±0.1%, and the voltage acquisition is another differential amplification circuit that amplifies the output voltage with a gain of 100 and a resolution of 1 mV. A 20 kΩ resistor is connected in series on the input side, and a 100 pF capacitor is connected in parallel to suppress high-frequency noise. The electric energy information enters the communication module (106). The communication module (106) is implemented through an RS-232 / RS-485 interface, and an ADM2485 isolation transceiver is used. The LAN interface selects a W5500 chip. The Modbus protocol stack is transplanted to the STM32F407 microcontroller, and the register mapping is as follows: 0x0000: current set value (0 - 1000 A) 0x0001: voltage set value (0 - 50 V) 0x0002: output status (0 / 1).

[0049] According to a specific embodiment of the present invention, for the filter module (102), the inductor device can be Coilcraft XAL7040-153M, and the capacitor device can be AVX Tantalum 15μF / 50V. For the energy storage module (103), the supercapacitor can be Littelfuse 0207 series. For the high-speed drive module (104), for the differential amplification part of the transistor, it can be NXP BC847B, for the second-stage drive part of the triode, it can be a high-speed transistor, for the third-stage drive part of the transistor, it can be IRFP460, and the resistor can be Vishay WSLP0603. For the Hall sensor in the current acquisition, it can be LEM LA55-P. Corresponding components can also select other suitable low models, such as ADI AD7606, INA128, etc.

[0050] According to a specific embodiment of the present invention, the third-stage drive amplification circuit part in the high-speed drive module (104) can be connected in series with a filter circuit, so as to filter out high-frequency noise, reduce ripple, protect the circuit, and improve the quality of the output current.

[0051] Figure 2 The schematic diagram of the circuit structure after adding a filter circuit to the high-speed drive module (104) according to a specific embodiment of the present invention is shown.

[0052] According to a specific embodiment of the present invention, a thermal management part can be added to the supercapacitor bank of the energy storage module 103. An aluminum heat sink is surface-mounted on the supercapacitor bank, and the temperature is controlled below 65°C by forced air cooling. The NTC thermistor is used to monitor the temperature in real time, which can effectively improve the circuit safety, extend the life of the current source, improve the system performance, enhance the environmental adaptability, and meet the safety regulations.

[0053] According to a specific embodiment of the present invention, the communication module (106) increases anti-interference design: the communication line uses a twisted shielded wire, and the shielding layer is grounded at a single point. The RS-485 bus terminal is matched with a 120Ω resistor, and the baud rate is set to 115200bps. This can effectively improve the communication quality, enhance the communication reliability, improve the system stability, adapt to the complex electromagnetic environment, and reduce the maintenance cost.

[0054] Figures 3-6 The front view, left view, rear view, and partial structural view of a high-current high-speed rising current source circuit of the present invention are respectively shown.

[0055] So far, the embodiments of the present invention have been described in detail with reference to the accompanying drawings. It should be noted that in the accompanying drawings or the text of the specification, the implementation manners that are not depicted or described are all forms known to those of ordinary skill in the art, and no detailed description has been made. In addition, the above definitions of each component and method are not limited to the specific structures, shapes, or manners mentioned in the embodiments, and those of ordinary skill in the art can make simple changes or substitutions to them.

[0056] Throughout the accompanying drawings, the same elements are denoted by the same or similar reference numerals. When it may cause confusion in understanding the present invention, conventional structures or configurations will be omitted.

[0057] Moreover, the shapes and sizes of the components in the figures do not reflect the actual sizes and proportions, but merely illustrate the content of the embodiments of the present invention. Additionally, in the embodiments, any reference signs placed between parentheses should not be construed as limiting the embodiments.

[0058] Unless otherwise known to the contrary, the numerical parameters in this specification and the appended embodiments are approximate values and can be changed according to the required characteristics obtained through the content of the present invention. Specifically, all the numbers representing the contents of components, reaction conditions, etc. used in the specification and the embodiments should be understood to be modified by the term "about" in all cases. Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in the embodiments. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

[0059] The ordinal numbers such as "first", "second", "third", etc. used in the specification and the embodiments are used to modify the corresponding elements, and do not themselves mean that the elements have any ordinal numbers, nor do they represent the order of one element and another element, or the order in the manufacturing method. The use of these ordinal numbers is only to clearly distinguish an element with a certain name from another element with the same name.

[0060] Those skilled in the art can understand that the features described in the various embodiments of the present invention can be combined and / or combined in various ways, even if such combinations or combinations are not explicitly described in the present invention. In particular, without departing from the spirit and teachings of the present invention, the features described in the various embodiments of the present invention can be combined and / or combined in various ways. All such combinations and / or combinations fall within the scope of the present invention.

[0061] The embodiments of the present invention have been described above. However, these embodiments are only for illustrative purposes and not for limiting the scope of the present invention. Although the embodiments have been described separately above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. Without departing from the scope of the present invention, those skilled in the art can make various substitutions and modifications, and all such substitutions and modifications should fall within the scope of the present invention.

Claims

1. A high-current and high-speed rising current source circuit, characterized in that, The current source includes an AC-DC conversion module (101), a filtering module (102), an energy storage module (103), a high-speed driving module (104), a collection module (105), and a communication module (106) that are connected in series in sequence, where the energy storage module (103) is a supercapacitor bank, configured with a voltage equalization circuit, and supports instantaneous large-current discharge; the high-speed driving module (104) adopts a three-stage driving circuit, including a differential amplification circuit, a push-pull amplification circuit, and a parallel MOSFET driving and amplification circuit.

2. The high-current high-rise current source circuit according to claim 1, wherein The high-speed driving module (104) adopts a three-stage driving structure that is connected in series with each other in sequence, including a first-stage driving, a second-stage driving, and a third-stage driving; The first-stage driving is a differential amplification circuit composed of at least one pair of symmetrically arranged transistor pairs, the first transistor VT1 and the second transistor VT2. The bases are respectively connected to the input signal through the first resistor R1 and the second resistor R2. The emitters are commonly connected to the common resistors, the third resistor R3 and the fourth resistor R4. The collectors are respectively connected to the power supply and the load resistor to form a differential amplification circuit; The second-stage driving includes at least a pair of two transistors with the same parameters: the third transistor VT3, the fourth transistor VT4, three resistors, the seventh resistor R7, the eighth resistor R8, the ninth resistor R9, and a capacitor, the fifth capacitor C5. Among them, two transistors, the third transistor VT3, the fourth transistor VT4, and the ninth resistor R9 are connected in series, and the fifth capacitor C5, the eighth resistor R8, and the seventh resistor R7 are connected in series; The third-stage driving includes N triodes and an equal number of protection resistors. The N is a positive integer not less than 1, and they are connected in parallel in the circuit to achieve step-by-step driving and amplification.

3. The high-current high-rise current source circuit according to claim 1, characterized in that The energy storage module (103) uses a supercapacitor bank, and the capacity is optional. The typical value is 10F, and it supports an instantaneous discharge current ≥500A.

4. A high-current high-rise current source circuit according to claim 1, characterized in that, The AC-DC conversion module (101) includes an adjustable input voltage range, the typical value is 100 - 240VAC, and the output voltage is optional, the typical value is 48VDC.

5. A high-current high-rise current source circuit according to claim 1, characterized in that, The filtering module (102) includes a second-order Butterworth low-pass structure, and the cut-off frequency can be set to 1kHz, which can effectively suppress high-frequency noise.

6. The high-current high-speed rising current source circuit according to claim 1, characterized in that, The collection module (105) includes current collection and voltage collection.

7. A high-current high-rise current source circuit according to claim 1, characterized in that The energy storage module (103) can add thermal management.

8. A high-current high-rise current source circuit according to claim 2, characterized in that, Between the output terminal of the first-stage driving and the input terminal of the second-stage driving in the high-speed driving module (104), a resistor, the sixth resistor R6, and two capacitors, the third capacitor C3 and the fourth capacitor C4, are connected in series to form an RC filtering circuit. Between the output terminal of the second-stage driving and the input terminal of the third-stage driving, a filtering circuit composed of the sixth capacitor C6 and the tenth resistor R10 is connected in series.

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