Manufacturing method of MIP-LED packaging body

Abstract

The invention discloses a manufacturing method of an MIP-LED packaging body, and the method comprises the steps: providing a temporary supporting carrier plate which is provided with a high-temperature-resistant adhesive film, providing a thin film substrate, and enabling the thin film substrate to be pasted on the temporary supporting carrier plate through the high-temperature-resistant adhesive film; a plurality of LED chips are provided, the LED chips are transferred to the side, away from the temporary supporting carrier plate, of the thin film substrate, and the LED chips and the thin film substrate are welded; forming a packaging layer for packaging an LED chip on one side, far away from the temporary supporting carrier plate, of the thin film substrate; cutting the packaging layer and the thin film substrate from the position between the adjacent LED chips to form a single LED packaging body; and debonding the high-temperature-resistant adhesive film to separate the LED packaging body from the temporary supporting carrier plate. Compared with the prior art, the process difficulty is low, the thin film substrate is not prone to deformation, and the yield is high.

Description

Technical Field

[0001] The present invention relates to the technical field of LED display, and particularly to the fabrication of an LED package. Background Art

[0002] Existing large LED display screens are mainly assembled by multiple LED display modules. The fabrication process of LED display modules can be divided into two techniques: COB (Chip on Board) and MIP (Mini / Micro in package). Among them, in the MIP process, tiny-sized LED chips need to be die-bonded onto thin film substrates such as BT substrates, glass substrates, or ceramic substrates first, and then encapsulated and diced to form pre-packaged LED packages. When fabricating LED display modules using MIP LED packages, the distance between the two electrodes of the LED chips can be enlarged through the above-mentioned thin film substrates, and the encapsulation packaging materials can protect the LED chips, improving the yield of die-bonding the LED packages onto the target display substrates.

[0003] Currently, when processing LED chips into pre-packaged LED packages through MIP technology, the thin film substrate is usually fixed to a processing fixture, and the processing edge of the thin film substrate is clamped and fixed. Then, the transfer, die-bonding, and encapsulation of the LED chips are carried out. During the processing, laser soldering or reflow soldering is required for die-bonding, and a packaging layer is formed by hot-pressing epoxy resin materials. After heat treatment, the thin film substrate will be deformed and become warped after the clamping and fixing are released, which is not conducive to subsequent dicing to form single LED packages and fabricating LED display modules.

[0004] Therefore, there is an urgent need for a fabrication method of an LED package with a new MIP process that can solve the above problems. Summary of the Invention

[0005] The objective of the present invention is to provide a fabrication method of a MIP-LED package, which has low process difficulty, and when manufacturing the lamp beads, the thin film substrate is not easily deformed and the yield is high.

[0006] To achieve the above object, the present invention discloses a method for manufacturing a MIP-LED package, comprising: providing a temporary support carrier having a layer of high-temperature resistant adhesive film thereon, providing a thin film substrate, and pasting the thin film substrate on the temporary support carrier through the high-temperature resistant adhesive film; providing a plurality of LED chips, transferring the LED chips to a side of the thin film substrate away from the temporary support carrier, and soldering the LED chips and the thin film substrate; forming a package layer for encapsulating the LED chips on a side of the thin film substrate away from the temporary support carrier; cutting the package layer and the thin film substrate at positions between adjacent LED chips to form single LED packages; and debonding the high-temperature resistant adhesive film to separate the LED packages and the temporary support carrier.

[0007] Preferably, the high-temperature resistant adhesive film has a first adhesive layer, and the thin film substrate is adhered to the high-temperature resistant adhesive film through the first adhesive layer. The first adhesive layer is a high-temperature resistant and debondable adhesive. When debonding the high-temperature resistant adhesive film to separate the LED package and the temporary support carrier, the first adhesive layer is debonded. This solution enables the LED package and the temporary support carrier to be debonded from the first adhesive layer closest to the thin film substrate of the high-temperature resistant adhesive film during debonding, preventing excessive impurities from remaining on the LED package after debonding.

[0008] Specifically, the first adhesive layer is a mixed adhesive of a pressure-sensitive adhesive material and a high-temperature resistant and debondable adhesive material. Among them, the pressure-sensitive adhesive material can not only ensure that the high-temperature resistant adhesive film has good adhesiveness at room temperature, but also, by virtue of the viscoelastic dual characteristics of the pressure-sensitive adhesive with the viscous properties of a liquid and the elastic properties of a solid, provide a certain buffer on the back of the thin film substrate adjacent to the temporary support carrier. When the local heat during die bonding of the LED chip is too high, the stress deformation caused by uneven heat is released in a timely manner, enabling the thin film substrate to maintain a certain flatness during die bonding.

[0009] Specifically, the thickness of the first adhesive layer is 20um - 100um. Among them, the thickness of the first adhesive layer is preferably 20um - 40um. Maintaining a certain thickness of the first adhesive layer enables the thin film substrate to have sufficient buffering while maintaining the stability of the adhesion of the thin film substrate.

[0010] Preferably, the high-temperature resistant adhesive film is a single-layer adhesive film with one adhesive layer or a double-sided tape with two adhesive layers. There is a substrate between the two adhesive layers of the double-sided tape.

[0011] Specifically, the thickness of the adhesive layer is 20um - 100um, and the thickness of the substrate is 25um - 120um.

[0012] More specifically, the thickness of the adhesive layer is 20um - 40um, and the thickness of the substrate is 50um - 75um.

[0013] Preferably, the thin film substrate is a BT substrate, a glass substrate or a ceramic substrate. The thin film substrate has conductive lines for making two opposite sides of the thin film substrate conductive. The conductive lines include pads or line traces for welding with the LED chips.

[0014] Preferably, after pasting the thin film substrate on the temporary support carrier through the high-temperature resistant adhesive film, the first side surface of the thin film substrate away from the temporary support carrier is flattened or rolled to make the first side surface of the thin film substrate in the same plane.

[0015] Specifically, a flattening mechanism is used to flatten the first side surface of the thin film substrate from the side of the thin film substrate away from the temporary support carrier. Among them, the flattening mechanism is one or more flattening heads. Of course, a rolling mechanism can also be used to roll the first side surface from one side to the other side of the first side surface of the thin film substrate.

[0016] Preferably, when cutting the encapsulation layer and the thin film substrate from the position between adjacent LED chips to form single LED packages, cut to the middle position of the high-temperature resistant adhesive film to ensure that the thin film substrate is completely cut while the temporary support carrier is not cut.

[0017] Specifically, when cutting the encapsulation layer and the thin film substrate from the position between adjacent LED chips to form single LED packages, cut to a position more than half of the thickness of the high-temperature resistant adhesive film.

[0018] Preferably, before "debonding the high-temperature resistant adhesive film to separate the LED package from the temporary support carrier", a temporary carrier is also provided, and the temporary carrier is attached to the side of the LED package away from the thin film substrate, so that after debonding the high-temperature resistant adhesive film to separate the LED package from the temporary support carrier, the LED package is transferred to the temporary carrier.

[0019] Preferably, the specific steps of "transferring the LED chip to the side of the thin film substrate away from the temporary support carrier and welding the LED chip and the thin film substrate" include: transferring the LED chip to the side of the thin film substrate away from the temporary support carrier; pre-welding the LED chip and the thin film substrate by laser; performing secondary welding on the LED chip and the thin film substrate by reflow soldering; and cleaning the thin film substrate welded with the LED chip.

[0020] Compared with the prior art, in the process of manufacturing the LED package based on the MIP process, the present invention pastes the thin film substrate on the temporary support carrier plate with a high-temperature resistant adhesive film. The high-temperature resistant adhesive film can not only effectively buffer the thin film substrate to eliminate the stress generated by the local heat deformation of the thin film substrate during die bonding, but also firmly paste the thin film substrate on the temporary support carrier plate during die bonding, overcoming the acting force of the thin film substrate being deformed by heat during the manufacturing process, keeping the thin film substrate flat, with a high yield rate and low process difficulty. Moreover, the high-temperature resistant adhesive film will not lose its viscosity due to high temperature and does not need to be replaced after processes such as die bonding and film pressing, which simplifies the process and improves production efficiency. Brief Description of the Drawings

[0021] Figure 1 is a flowchart of the manufacturing method of the MIP-LED package of the present invention.

[0022] Figure 2 is a manufacturing schematic diagram of the manufacturing method of the MIP-LED package in Embodiment 1 of the present invention.

[0023] Figure 3 is a manufacturing schematic diagram of the manufacturing method of the MIP-LED package in Embodiment 2 of the present invention. Detailed Description of the Embodiments

[0024] To describe in detail the technical content, structural features, achieved objectives and effects of the present invention, the following is a detailed description in combination with the embodiments and accompanied by the drawings.

[0025] Embodiment 1:

[0026] The present invention discloses a manufacturing method of a MIP-LED package, including steps S11 to S17.

[0027] S11, provide a temporary support carrier plate 10, and a high-temperature resistant adhesive film 20 is coated on the temporary support carrier plate 10. The temporary support carrier plate 10 is a high-temperature resistant carrier plate with a certain rigidity, meeting the requirement of not warping and deforming under high temperature conditions, such as a glass carrier plate.

[0028] Among them, the high-temperature resistant adhesive film 20 can provide stable adhesion in the manufacturing of the LED package. In this embodiment, the high-temperature resistant adhesive film 20 is a single-layer adhesive film structure, that is, it only has one adhesive layer 21. The adhesive layer 21 is one or more of a pressure-sensitive material, a laser-debondable material, or a hot-water-debondable material, with a thickness of 20um to 100um, and 20um to 40um is the best.

[0029] Specifically, according to different debonding methods, the material of the adhesive layer 21 of the high-temperature resistant adhesive film 20 can be a mixed adhesive of a pressure-sensitive adhesive material and a hot water-debondable adhesive material or a mixed adhesive of a pressure-sensitive adhesive material and a laser-debondable adhesive material. When the adhesive layer 21 of the high-temperature resistant adhesive film 20 is a mixed adhesive of a pressure-sensitive adhesive material and a laser-debondable adhesive material, the temporary support carrier 10 must be made of a carrier with light transmittance, so that the laser can penetrate the temporary support carrier 10 when the high-temperature resistant adhesive film 20 is debonded. Of course, it is not excluded that other non-high-temperature debonding adhesive materials can be used here.

[0030] The production of the temporary support carrier 10 coated with the high-temperature resistant adhesive film 20 includes: injecting a certain amount of high-temperature resistant mixed adhesive (a mixed adhesive of a pressure-sensitive adhesive material and a laser-debondable adhesive material, or a mixed adhesive of a pressure-sensitive adhesive material and a hot water-debondable adhesive material) onto the temporary support carrier 10, and spin-coating it on the surface of the temporary support carrier 10 to form the high-temperature resistant adhesive film 20.

[0031] S12, provide a thin film substrate 30, and paste the thin film substrate 30 onto the high-temperature resistant adhesive film 20 so that the temporary support carrier 10 supports and fixes the thin film substrate 30.

[0032] Among them, the thin film substrate 30 can be a BT substrate, a glass substrate or a ceramic substrate. The thin film substrate 30 has circuits capable of realizing conduction on both sides, and the circuits include pads or circuit traces for soldering LED chips 40.

[0033] The size of the thin film substrate 30 is less than or equal to the size of the high-temperature resistant adhesive film 20. The first side surface of the thin film substrate 30 away from the temporary support carrier 10 should be in the same plane. Considering that the flatness of the thin film substrate 30 will affect the accuracy during the transfer and soldering of the LED chips 40, after attaching the thin film substrate 30, tools such as a pressing head can be used to flatten the first side surface of the thin film substrate 30, or a corresponding rolling mechanism can be used to roll the first side surface of the thin film substrate 30 flat. Among them, when flattening or rolling the first side surface of the thin film substrate 30, the pressure-sensitive adhesive material in the high-temperature resistant adhesive film 20 can flow as necessary during flattening or rolling, making the first side surface of the thin film substrate 30 flat.

[0034] S13, provide a number of LED chips 40, transfer the LED chips 40 to the side of the thin film substrate 30 away from the temporary support carrier 10, and solder the LED chips 40 and the thin film substrate 30.

[0035] Among them, the specific methods for transferring the LED chips 40 onto the thin-film substrate 30 include the pick-and-place transfer method (Pick&Place) using a suction nozzle, the thimble transfer method, or the mass transfer method. In step S13, a number of LED chips 40 can all be LED chips 40 of one light color, or can be several LED chips 40 of different light colors. Generally, the light colors of the LED chips 40 are red, green, and blue.

[0036] In this embodiment, the methods for soldering the LED chips 40 and the thin-film substrate 30 include reflow soldering and laser soldering. Among them, the laser soldering can be one of spot laser soldering, line laser soldering, and surface laser soldering.

[0037] Specifically, step S13 includes steps S131 to S135.

[0038] S131, transfer the LED chips 40 onto the thin-film substrate 30;

[0039] S132, pre-solder the LED chips 40 and the thin-film substrate 30 using a laser. Among them, the welding laser parameters are: line spot size: 60*30mm - 200*40mm, current: 20mA - 80mA, laser power: 0.5W - 3W, scanning time 4 - 30sec.

[0040] S133, perform secondary soldering using reflow soldering, and the maximum temperature of the reflow soldering is 285°C.

[0041] S134, use clean water to wash one side of the thin-film substrate 30 soldered with the LED chips 40.

[0042] S135, dry the thin-film substrate 30 with the LED chips 40 fixed thereon at 150°C for 2 hours.

[0043] Preferably, after step S135, the one side of the thin-film substrate 30 with the LED chips 40 fixed thereon can also be subjected to plasma cleaning to improve the cleanliness of the thin-film substrate 30 and enhance the effective contact between the subsequent encapsulation material and the surfaces of the thin-film substrate 30 and the LED chips 40.

[0044] Steps S131 to S135 are applicable to the case where the soldering temperature of the solder paste is above 280°C. First, pre-solder the LED chips 40 and the thin-film substrate 30 using line laser to enable the two to initially generate a bonding force. The line laser can meet the temperature requirements of the pre-soldering and can be synchronized or performed on the same machine as the chip transfer process, which can improve the efficiency. Then, raise the soldering temperature to the target high temperature through reflow soldering.

[0045] S14. Form a packaging layer 50 for packaging the LED chip 40 on the side of the thin film substrate 30 away from the temporary support carrier 10.

[0046] Specifically, step S14 specifically includes: injecting a packaging material onto the temporary support carrier 10, and molding and thermally curing the packaging material to form the packaging layer 50 for packaging the LED chip 40.

[0047] Of course, different from this, in another embodiment, step S14 can be: injecting a packaging material into a molding fixture, inverting the temporary support carrier 10 into the molding fixture, so that the side of the thin film substrate 30 with the LED chip 40 fixed thereon and the LED chip 40 are immersed in the liquefied packaging material in the molding cavity of the molding fixture, and performing molding and thermal curing on the packaging material to form the packaging layer 50 for packaging the LED chip 40.

[0048] S15. Cut the packaging layer 50 and the thin film substrate 30 from the position between adjacent LED chips 40 to form single LED packages 1. Each LED package 1 includes a substrate 30a divided by the thin film 30, an LED chip 40, and a package 50a divided by the packaging layer 50.

[0049] Specifically, in step S15, during cutting, cut to the middle position of the high-temperature resistant adhesive film 20 to ensure that the thin film substrate 30 is completely cut while the temporary support carrier 10 is not cut. In this embodiment, cut to the half position of the high-temperature resistant adhesive film 20. Of course, the specific position of cutting to the middle of the high-temperature resistant adhesive film 20 is not limited to the half position, and can be set according to actual needs. It is better to cut to the half or more of the high-temperature resistant adhesive film 20.

[0050] In this embodiment, in step S15, perform water jet cutting along the gaps between the LED chips 40 to form single LED packages 1. Each single LED package 1 can include one or more LED chips 40.

[0051] Step S16. Provide a temporary carrier 60, and bond the temporary carrier 60 to the side of the LED package 1 away from the thin film substrate 30.

[0052] Among them, temporarily bond the temporary carrier 60 to the side of the LED package away from the thin film substrate 30, and the debonding method of this temporary bond is different from that of the high-temperature resistant adhesive film 20. For example, the debonding method between the temporary carrier 60 and the LED package can be thermal debonding.

[0053] Step S17, release the bonding of the high-temperature resistant adhesive film 20 to separate the LED package from the temporary support carrier 10, so that the LED package is transferred onto the temporary carrier 60.

[0054] Wherein, when the material of the high-temperature resistant adhesive film 20 is a mixed adhesive of a pressure-sensitive adhesive material and a hot-water releasable adhesive material, perform hot-water debonding on the high-temperature resistant adhesive film 20, for example, soak it in water at a temperature of 60 - 100 °C for 5 - 20 min, so that the high-temperature resistant adhesive film 20 loses its adhesiveness, the LED package is separated from the temporary support carrier 10, and the LED package is transferred onto the temporary carrier 60.

[0055] Wherein, the temporary carrier 60 is a carrier film. The carrier film, as another temporary carrier 60, facilitates the use of the fabricated LED package in the subsequent process of fabricating an LED display module. The carrier film can be a film structure such as a blue film or a UV film.

[0056] Certainly, if the material of the high-temperature resistant adhesive film 20 is a mixed adhesive of a pressure-sensitive material and a laser-releasable material, then in step S17, laser debonding needs to be performed on the high-temperature resistant adhesive film 20. For example, use UV (ultraviolet) with a wavelength of 254 nm and an energy of 13000 mJ to release the adhesiveness of the high-temperature resistant adhesive film 20, the LED package 1 is separated from the temporary support carrier 10, and the LED package 1 is transferred onto the temporary carrier 60. Preferably, in this embodiment, at the same time as performing laser debonding on the high-temperature resistant adhesive film 20, a nozzle can be used to blow air between the substrate 30a of the LED package 1 and the temporary support carrier 10, so that the temporary support carrier 10 gradually detaches from the LED package 1. At this time, the temporary support carrier 10 is above the LED package 1, facilitating the LED package 1 to be well supported on the temporary carrier 60 after the temporary support carrier 10 is separated.

[0057] Certainly, it is also possible not to perform step S16 and step S17. Instead, after step S15, directly release the adhesive layer 21 that bonds the high-temperature resistant adhesive film 20 to the thin-film substrate 30 to separate the LED package 1 and the temporary support carrier 10, and then use other transfer mechanisms to remove the LED package 1 from the temporary support carrier 10, without using the temporary carrier 60 to transfer the LED package 1 as a whole.

[0058] Embodiment 2:

[0059] The present invention discloses a method for fabricating a MIP-LED package, including steps S11 to S17.

[0060] S11, provide a temporary support carrier 10, and the temporary support carrier 10 is provided with a high-temperature resistant adhesive film 20a. The temporary support carrier 10 is a high-temperature resistant carrier with a certain rigidity, meeting the requirement of not warping and deforming under high-temperature conditions, such as a glass carrier.

[0061] Among them, the high-temperature resistant adhesive film 20a can provide stable adhesiveness in the production of LED packages. In this embodiment, the high-temperature resistant adhesive film 20a has a double-sided tape structure, including a substrate 22 and adhesive layers formed on both sides of the substrate. Specifically, it includes: a second adhesive layer 23 formed on one side of the substrate 22 adjacent to the temporary support carrier 10 and a first adhesive layer 21a formed on the side of the substrate 22 away from the temporary support carrier 10. The high-temperature resistant adhesive film 20a is pasted on the temporary support carrier 10 through the second adhesive layer 23.

[0062] Among them, the substrate 22 can be PI, PO, or modified PET, with a thickness between 25um and 120um, and the optimal thickness is 50 - 75um.

[0063] Among them, both the first adhesive layer 21a and the second adhesive layer 23 are high-temperature resistant adhesives and can still maintain stable adhesiveness at high temperatures. The first adhesive layer 21a is a high-temperature resistant and debondable material, and its debonding method is a non-high-temperature method, for example: laser debonding or hot water debonding. The thickness of the first adhesive layer 21a and the second adhesive layer 23 is 20um - 100um, and the optimal thickness is 20um - 40um.

[0064] In this embodiment, according to different debonding methods, the material of the first adhesive layer 21a can be selected from one or more of pressure-sensitive adhesive materials, laser-debondable adhesive materials, or hot-water-debondable adhesive materials, with a thickness of 20um - 100um, and the optimal thickness is 20um - 40um.

[0065] The second adhesive layer 23 can be a temporary bonding adhesive or a permanent bonding adhesive. In this embodiment, the material and thickness of the second adhesive layer 23 are the same as those of the first adhesive layer 21a. Of course, the material of the second adhesive layer 23 can be different from that of the first adhesive layer 21a, and the thickness can also be different.

[0066] In this embodiment, when the first adhesive layer 21a is a mixed adhesive of pressure-sensitive adhesive material and laser-debondable adhesive material, the temporary support carrier 10 must be selected as a carrier with light transmittance so that the laser can penetrate the temporary support carrier 10 when the high-temperature resistant adhesive film 20a is debonded. Of course, other non-high-temperature debonding adhesive materials are not excluded here.

[0067] S12, provide a thin film substrate 30, and paste the thin film substrate 30 onto the high-temperature resistant adhesive film 20a so that the temporary support carrier 10 supports and fixes the thin film substrate 30.

[0068] Among them, the thin film substrate 30 can be a BT substrate, a glass substrate, or a ceramic substrate. The thin film substrate 30 has circuits capable of realizing conduction on both sides, and the circuits include pads or circuit traces for soldering LED chips 40.

[0069] The size of the thin film substrate 30 is less than or equal to the size of the high-temperature resistant adhesive film 20a. The first side surface of the thin film substrate 30 away from the temporary support carrier 10 should be on the same plane. Considering that the flatness of the thin film substrate 30 will affect the accuracy during the transfer and welding of the LED chips 40, after attaching the thin film substrate 30, between step S12 and step S13, tools such as a pressing head can be used to flatten the first side surface of the thin film substrate 30, or a corresponding rolling mechanism can be used to roll flat the first side surface of the thin film substrate 30. When flattening or rolling the first side surface of the thin film substrate 30, the pressure-sensitive adhesive material in the high-temperature resistant adhesive film 20a can flow as necessary during flattening or rolling, making the first side surface of the thin film substrate 30 flat.

[0070] S13. Provide a number of LED chips 40, transfer the LED chips 40 to the side of the thin film substrate 30 away from the temporary support carrier 10, and weld the LED chips 40 and the thin film substrate 30.

[0071] Specifically, the specific method for transferring the LED chips 40 onto the thin film substrate 30 includes the pick-and-place transfer method (Pick&Place) using a suction nozzle, the thimble transfer method, or the mass transfer method. In step S13, the number of LED chips 40 can all be LED chips 40 of one light color, or several different light color LED chips 40. Generally, the light colors of the LED chips 40 are red, green, and blue.

[0072] The methods for welding the LED chips 40 and the thin film substrate 30 include reflow soldering and laser welding. Among them, laser welding can be one of dot laser welding, line laser welding, and surface laser welding.

[0073] Specifically, step S13 includes steps S131 to S135.

[0074] S131. Transfer the LED chips 40 onto the thin film substrate 30.

[0075] S132. Pre-weld the LED chips 40 and the thin film substrate 30 using a laser. Among them, the welding laser parameters are: line spot size: 60*30mm - 200*40mm, current: 20mA - 80mA, laser power: 0.5W - 3W, scanning time 4 - 30sec.

[0076] S133. Perform secondary welding using reflow soldering, and the maximum temperature of the reflow soldering is 285°C.

[0077] S134. Wash one side of the thin film substrate 30 welded with the LED chips 40 with clean water.

[0078] S135, dry the thin film substrate 30 with the LED chip 40 fixed thereon at 150 °C for 2 hours.

[0079] Preferably, after step S135, one side of the thin film substrate 30 with the LED chip 40 fixed thereon can also be subjected to plasma cleaning to improve the cleanliness of the thin film substrate 30 and enhance the effective contact between the subsequent encapsulation material and the surfaces of the thin film substrate 30 and the LED chip 40.

[0080] Steps S131 to S135 are applicable to the case where the soldering temperature of the solder paste is above 280 °C. First, pre-weld the LED chip 40 and the thin film substrate 30 with line laser to initially generate a bonding force between the two. The line laser can meet the temperature requirements of pre-welding and can be synchronized or performed on the same machine as the chip transfer process, which can improve efficiency. Then, raise the soldering temperature to the target high temperature through reflow soldering.

[0081] S14, form an encapsulation layer 50 for encapsulating the LED chip 40 on the side of the thin film substrate 30 away from the temporary support carrier 10.

[0082] Specifically, step S14 specifically includes: injecting an encapsulation material on the temporary support carrier 10, and molding and thermally curing the encapsulation material to form an encapsulation layer 50 for encapsulating the LED chip 40.

[0083] Certainly, different from this, in another embodiment, step S14 can be: injecting an encapsulation material into a molding fixture, inverting the temporary support carrier 10 onto the molding fixture, so that one side of the thin film substrate 30 with the LED chip 40 fixed thereon and the LED chip 40 are immersed in the liquefied encapsulation material in the molding cavity of the molding fixture, and performing molding and thermal curing on the encapsulation material to form an encapsulation layer 50 for encapsulating the LED chip 40.

[0084] S15, cut the encapsulation layer 50 and the thin film substrate 30 at the positions between adjacent LED chips 40 to form single LED packages 1. The LED package 1 includes a substrate 30a divided by the thin film 30, an LED chip 40, and an encapsulation body 50a divided by the encapsulation layer 50.

[0085] Specifically, in step S15, during cutting, cut to the middle position of the high-temperature resistant adhesive film 20a to ensure that the thin film substrate 30 is completely cut while the temporary support carrier 10 is not cut. In this embodiment, cut to the half position of the high-temperature resistant adhesive film 20a. Of course, the specific position of cutting to the middle of the high-temperature resistant adhesive film 20a is not limited to the half position and can be set according to actual needs. It is better to cut to the half or more of the high-temperature resistant adhesive film 20.

[0086] In this embodiment, in step S15, water jet cutting is performed along the gaps between the LED chips 40 to form single LED packages 1, and each single LED package 1 may include one or more LED chips 40.

[0087] Step S16: Provide a temporary carrier 60 and bond the temporary carrier 60 to the side of the LED package 1 away from the thin film substrate 30.

[0088] Among them, the temporary carrier 60 is temporarily bonded to the side of the LED package 1 away from the thin film substrate 30, and the debonding method of this temporary bond is different from that of the high-temperature resistant adhesive film 20a.

[0089] Step S17: Debond the high-temperature resistant adhesive film 20a to separate the LED package 1 from the temporary support carrier 10, so that the LED package 1 is transferred onto the temporary carrier 60.

[0090] Among them, laser debonding is performed on the high-temperature resistant adhesive film 20a. For example, UV (ultraviolet) light with a wavelength of 254 nm and an energy of 13000 mJ is used to debond the viscosity of the high-temperature resistant adhesive film 20a, so that the LED package 1 is separated from the temporary support carrier 10 and the LED package 1 is transferred onto the temporary carrier 60. Preferably, in this embodiment, while performing laser debonding on the high-temperature resistant adhesive film 20a, an air nozzle can be used to blow air between the substrate 30a of the LED package 1 and the temporary support carrier 10, so that the temporary support carrier 10 gradually separates from the LED package. At this time, the temporary support carrier 10 is above the LED package 1, which is convenient for the LED package 1 to be well supported on the temporary carrier 60 after the temporary support carrier 10 is separated.

[0091] Among them, the temporary carrier 60 is a carrier film. As another temporary carrier 60, the carrier film is convenient for the fabricated MIP-LED package to be used in the subsequent process of fabricating an LED display module. The carrier film can be a film structure such as a blue film or a UV film.

[0092] When the material of the high-temperature resistant adhesive film 20a is a mixed adhesive of a pressure-sensitive adhesive material and a hot water-debondable adhesive material, hot water debonding is performed on the high-temperature resistant adhesive film 20a. For example, it is soaked in water at a temperature of 60 - 100 °C for 5 - 20 min to make the high-temperature resistant adhesive film 20a lose its viscosity, so that the LED package is separated from the temporary support carrier 10 and the LED package is transferred onto the temporary carrier 60.

[0093] Of course, it is also possible to directly release the first adhesive layer 21a that bonds the high-temperature resistant adhesive film 20a to the thin film substrate 30 after step S15 to separate the LED package 1 and the temporary support carrier 10, instead of performing steps S16 and S17. Then, use other transfer mechanisms to remove the LED package 1 from the temporary support carrier 10, without using the temporary carrier 60 to transfer the LED package 1 as a whole.

[0094] The above-disclosed are only the preferred embodiments of the present invention. Of course, the scope of the rights of the present invention cannot be limited thereby. Therefore, equivalent changes made according to the scope of the patent application of the present invention still fall within the scope covered by the present invention.

Claims

1. A manufacturing method of an MIP-LED package, characterized in that: Including: Providing a temporary support carrier plate with a layer of high-temperature resistant adhesive film thereon, providing a thin film substrate, and pasting the thin film substrate on the temporary support carrier plate through the high-temperature resistant adhesive film; Providing a plurality of LED chips, transferring the LED chips to the side of the thin film substrate away from the temporary support carrier plate, and welding the LED chips and the thin film substrate; Forming an encapsulation layer for encapsulating the LED chips on the side of the thin film substrate away from the temporary support carrier plate; Cutting the encapsulation layer and the thin film substrate at the positions between adjacent LED chips to form single LED packages; Debonding the high-temperature resistant adhesive film to separate the LED packages and the temporary support carrier plate.

2. The manufacturing method of the MIP-LED package according to claim 1, wherein: The high-temperature resistant adhesive film has a first adhesive layer, the thin film substrate is adhered to the high-temperature resistant adhesive film through the first adhesive layer, the first adhesive layer is a high-temperature resistant and debondable adhesive, and the first adhesive layer is debonded when debonding the high-temperature resistant adhesive film to separate the LED packages and the temporary support carrier plate.

3. The manufacturing method of the MIP-LED package according to claim 2, characterized in that: The first adhesive layer is a mixed adhesive of a pressure-sensitive adhesive material and a high-temperature resistant and debondable adhesive material.

4. The manufacturing method of the MIP-LED package according to claim 3, characterized in that: The high-temperature resistant and debondable material is a laser-debondable material or a hot water-debondable material.

5. The manufacturing method of the MIP-LED package according to claim 1, characterized in that: The high-temperature resistant adhesive film is a single-layer adhesive film with one adhesive layer or a double-sided tape with two adhesive layers. There is a substrate between the two adhesive layers of the double-sided tape. The thickness of the adhesive layer is 20um - 100um, and the thickness of the substrate is 25um - 120um.

6. The manufacturing method of the MIP-LED package according to claim 5, wherein: The thickness of the adhesive layer is 20um - 40um, and the thickness of the substrate is 50um - 75um.

7. The manufacturing method of the MIP-LED package according to any one of claims 1-6, characterized in that: After pasting the thin film substrate on the temporary support carrier plate through the high-temperature resistant adhesive film, the first side surface of the thin film substrate away from the temporary support carrier plate is also flattened or rolled to make the first side surface of the thin film substrate in the same plane.

8. The manufacturing method of the MIP-LED package according to any one of claims 1-6, characterized in that: When cutting the encapsulation layer and the thin film substrate at the positions between adjacent LED chips to form single LED packages, cut to the middle position of the high-temperature resistant adhesive film to ensure that the thin film substrate is completely cut while the temporary support carrier plate is not cut.

9. The method for manufacturing the MIP-LED package according to any one of claims 1-6, characterized in that: Before "debonding the high-temperature resistant adhesive film to separate the LED packages from the temporary support carrier plate", a temporary carrier is also provided, and the temporary carrier is attached to the side of the LED packages away from the thin film substrate, so that after debonding the high-temperature resistant adhesive film to separate the LED packages from the temporary support carrier plate, the LED packages are transferred to the temporary carrier.

10. The manufacturing method of the MIP-LED package according to claim 1, wherein: The specific steps of "transferring the LED chips to the side of the thin film substrate away from the temporary support carrier plate and welding the LED chips and the thin film substrate" include: Transferring the LED chips to the side of the thin film substrate away from the temporary support carrier plate; Pre-welding the LED chips and the thin film substrate by laser; Performing secondary welding on the LED chips and the thin film substrate by reflow soldering; cleaning the thin film substrate welded with LED chips.

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