Window and display panel including same

Abstract

A window and a display panel including the window are provided. The window includes a window substrate, an anti-reflection layer disposed on the window substrate, an anti-fingerprint layer disposed over the anti-reflection layer, and an intermediate layer disposed between the anti-reflection layer and the anti-fingerprint layer, wherein the anti-reflection layer includes a first sub-layer including a first inorganic insulating material and a second sub-layer including a second inorganic insulating material different from the first inorganic insulating material, and the first inorganic insulating material includes two or more types of inorganic insulating materials including aluminum oxide.

Description

[0001] Cross - reference to related applications

[0002] This application claims the priority and benefit of Korean Patent Application No. 10 - 2023 - 0195383, filed with the Korean Intellectual Property Office on December 28, 2023, the entire content of which is incorporated herein by reference. Technical field

[0003] One or more embodiments relate to a window and a display panel including the window. Background art

[0004] Various types of display devices based on mobility have been used, and such display devices include a display panel for providing an image and a window for protecting the display panel.

[0005] The window may include a coating that reduces the reflectance of light incident from the outside to improve visibility.

[0006] For example, the window may include a coating to protect the display panel from contaminants including oil, fingerprints, and various foreign substances. Summary of the invention

[0007] One or more embodiments include a window having high hardness and low reflection characteristics and a display panel including the window. However, the embodiments are examples and do not limit the scope of the present disclosure.

[0008] Additional aspects will be set forth in part in the following detailed description, and in part will be obvious from the description, or may be learned by practicing the embodiments of the present disclosure.

[0009] According to one or more embodiments, the window may include a window substrate, an anti - reflection layer disposed on the window substrate, an anti - fingerprint layer disposed above the anti - reflection layer, and an intermediate layer disposed between the anti - reflection layer and the anti - fingerprint layer, wherein the anti - reflection layer may include a first sub - layer containing a first inorganic insulating material and a second sub - layer including a second inorganic insulating material different from the first inorganic insulating material, and the first inorganic insulating material includes two or more types of inorganic insulating materials containing alumina.

[0010] According to an embodiment, the first inorganic insulating material may include yttrium oxide.

[0011] According to an embodiment, based on the total weight of the first sub - layer, the first sub - layer may include at least about 80 wt% of alumina.

[0012] According to an embodiment, the second inorganic insulating material may include two or more types of inorganic insulating materials containing zirconia.

[0013] According to an embodiment, the second inorganic insulating material may include tantalum oxide.

[0014] According to an embodiment, based on the total weight of the second sublayer, the second sublayer may include at least about 80 wt% of zirconia.

[0015] According to an embodiment, the antireflection layer may have a structure in which the first sublayer and the second sublayer are stacked alternately with each other.

[0016] According to an embodiment, the refractive index of the first sublayer may be less than the refractive index of the second sublayer.

[0017] According to an embodiment, the refractive index of the first sublayer may be in the range of about 1.2 to about 2.0.

[0018] According to an embodiment, the refractive index of the second sublayer may be in the range of about 1.5 to about 2.6.

[0019] According to an embodiment, the window may have a reflectance of less than about 2.0%.

[0020] According to an embodiment, the window may have a surface hardness of about 10 GPa or greater.

[0021] According to one or more embodiments, a display panel may include a substrate, display elements disposed in a display area of the substrate, a packaging member disposed on the display elements, and a window disposed on the packaging member, the display elements including a first electrode, a second electrode, and an emission layer disposed between the first electrode and the second electrode, wherein the window may include a window substrate, an antireflection layer disposed on the window substrate, an anti-fingerprint layer disposed above the antireflection layer, and an intermediate layer disposed between the antireflection layer and the anti-fingerprint layer, the antireflection layer including a first sublayer containing a first inorganic insulating material and a second sublayer including a second inorganic insulating material different from the first inorganic insulating material, and the first inorganic insulating material including two or more types of inorganic insulating materials containing alumina.

[0022] According to an embodiment, the first inorganic insulating material may include yttrium oxide.

[0023] According to an embodiment, based on the total weight of the first sublayer, the first sublayer may include at least about 80 wt% of alumina.

[0024] According to an embodiment, the second inorganic insulating material may include two or more types of inorganic insulating materials containing zirconia.

[0025] According to an embodiment, the second inorganic insulating material may include tantalum oxide.

[0026] According to an embodiment, the antireflection layer may have a structure in which the first sublayer and the second sublayer are stacked alternately with each other.

[0027] According to an embodiment, the refractive index of the first sub-layer may be less than the refractive index of the second sub-layer.

[0028] According to an embodiment, the refractive index of the first sub-layer may be in the range of about 1.2 to about 2.0.

[0029] According to an embodiment, the window may have a reflectance of less than about 2.0%.

[0030] According to an embodiment, the window may have a surface hardness of about 10 GPa or greater. Description of the Drawings

[0031] The above and other aspects, features, and advantages of the embodiments will become more apparent from the following description taken in conjunction with the drawings, in which:

[0032] Figure 1 is a schematic perspective view of an electronic device according to an embodiment;

[0033] Figure 2 is along Figure 1 a schematic cross-sectional view of an electronic device according to an embodiment taken along line I-I';

[0034] Figure 3 is a schematic cross-sectional view of a display panel according to an embodiment;

[0035] Figure 4 is a schematic cross-sectional view of a window according to an embodiment;

[0036] Figure 5 is a schematic cross-sectional view of a window according to an embodiment;

[0037] Figure 6 is a graph showing the refractive index of the first sub-layer of the antireflection layer included in the window according to an embodiment;

[0038] Figure 7 is a graph showing the refractive index of the second sub-layer of the antireflection layer included in the window according to an embodiment;

[0039] Figure 8 is a graph showing the transmittance of the window according to an embodiment and a comparative example; and

[0040] Figure 9 is a graph showing the reflectance of the window according to an embodiment and a comparative example. Detailed Description

[0041] Reference will now be made in detail to embodiments shown in the accompanying drawings, in which like reference numerals always refer to like elements throughout. In this regard, the embodiments may have different forms and should not be construed as limited to the description set forth herein. Accordingly, the embodiments will be described only by referring to the drawings to explain aspects of the present specification. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Throughout the present disclosure, the expression "at least one of a, b, and c" indicates only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof.

[0042] Since various modifications can be applied and one or more embodiments can be implemented, the specific embodiments will be shown in the drawings and described in the detailed description. The effects and features, and the methods for achieving them, will become clear by referring to the embodiments described in detail below with reference to the drawings. However, the embodiments may have different forms and should not be construed as limited to the description set forth herein.

[0043] Hereinafter, embodiments will be described in detail with reference to the drawings. When describing with reference to the drawings, the same or corresponding elements will be given the same reference numerals, and redundant descriptions of these elements will be omitted.

[0044] It should be understood that although the terms "first" and "second" may be used herein to describe various elements, these elements should not be limited by these terms, and these terms are only used to distinguish one element from another.

[0045] In the following embodiments, unless the context clearly dictates otherwise, the singular forms include the plural forms.

[0046] It should be understood that the terms "comprise", "include", and "have" as used herein specify the presence of the described features or elements, but do not preclude the presence or addition of one or more other features or elements.

[0047] It should also be understood that when a layer, region, or element is referred to as being "on" another layer, region, or element, it can be directly or indirectly on the other layer, region, or element. That is, for example, there may be intervening layers, regions, or elements.

[0048] For convenience of description, the dimensions of the elements in the drawings may be exaggerated. For example, since the dimensions and thicknesses of the elements in the drawings are arbitrarily shown for convenience of explanation, the following embodiments are not limited thereto.

[0049] When the determined implementation manners can be implemented in different ways, the specific process sequence can also be performed differently from the described sequence. As an example, two processes described consecutively can be performed substantially synchronously or in an order opposite to the described order.

[0050] As used herein, the expression “A and / or B” indicates A, B, or both A and B. Expressions such as “at least one of A and B” indicate A, B, or both A and B.

[0051] It should be understood that when a layer, region, or element is referred to as being “connected to” another layer, region, or element, it can be “directly connected to” the other layer, region, or element or can be “indirectly connected to” the other layer, region, or element with one or more intervening layers, regions, or elements therebetween. For example, it should be understood that when a layer, region, or element is referred to as being “electrically connected to” another layer, region, or element, it can be “directly electrically connected to” the other layer, region, or element and / or can be “indirectly electrically connected to” the other layer, region, or element with one or more intervening layers, regions, or elements therebetween.

[0052] The x-axis, y-axis, and z-axis are not limited to the three axes of a rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other or can represent different directions that are not perpendicular to each other.

[0053] Figure 1 is a schematic perspective view of an electronic device 1 according to an embodiment, and Figure 2 is a schematic cross-sectional view of the electronic device 1 taken along Figure 1 line I-I' according to an embodiment. Figure 3 is a schematic cross-sectional view of a display panel DP according to an embodiment, showing the structure of a display region.

[0054] Referring to Figure 1 and Figure 2 , the electronic device 1 can display video or still images and can be used not only as a display screen of a portable electronic device such as a mobile phone, a smart phone, a tablet personal computer (PC), a mobile communication terminal, an electronic notebook, an e-book, a portable multimedia player (PMP), a navigation device, and an ultra-mobile PC (UMPC), but also as a display screen of various products such as a television, a notebook computer, a monitor, a billboard, and an Internet of Things (IoT) device. For example, the electronic device 1 according to an embodiment can be used in wearable devices such as a smart watch, a watch phone, a glasses-type display, and a head-mounted display (HMD). In addition, the electronic device 1 according to an embodiment can be used as a display on an instrument panel of a vehicle, a central instrument panel or a central information display (CID) on the instrument panel of a vehicle, an in-vehicle mirror display replacing a side mirror of a vehicle, or a display disposed at a rear side of a front seat as an entertainment device for a rear seat of a vehicle. For convenience of description,Figure 1 The electronic device 1 according to an embodiment is shown as a smart phone.

[0055] The electronic device 1 may have a rectangular shape in a plan view. For example, as Figure 1 shown, the electronic device 1 may have a rectangular planar shape with a short side in the x direction and a long side in the y direction. The thickness direction of the electronic device 1 may be perpendicular to the plane defined by the x direction and the y direction. For example, the thickness direction may be parallel to the z direction. The corners at the intersection of the short side in the x direction and the long side in the y direction may be rounded to have a certain curvature or may be formed as right angles. The planar shape of the electronic device 1 is not limited to a rectangular shape, and the electronic device 1 may have other shapes, such as polygons, ellipses, or irregular shapes other than rectangles.

[0056] Referring to Figure 2 , the electronic device 1 may include a housing HS and a display panel DP. The housing HS may accommodate the display panel DP. Figure 2 The housing HS is shown surrounding (e.g., integrally surrounding) the edge portion (or side surface) of the display panel DP, but the embodiment is not limited thereto. In an embodiment, the housing HS may have a shape in which two or more members are coupled to each other instead of being formed as a single body. In addition to the display panel DP, components for driving the electronic device 1, such as a power source (such as a battery) or a circuit board, may be mounted (or accommodated) in the housing HS.

[0057] The display panel DP may include a display area DA and a peripheral area PA outside the display area DA. The display panel DP may provide an image via an array of sub-pixels PX disposed in the display area DA. Each sub-pixel PX may include a display element (or a light-emitting element) electrically connected to a sub-pixel circuit. The display element may include a light-emitting diode. For example, an organic light-emitting diode including an organic emission layer.

[0058] Each sub-pixel PX may emit red light, green light, or blue light. In another example, each sub-pixel PX may emit red light, green light, blue light, or white light.

[0059] Referring to Figure 2 and Figure 3 , the display panel DP may include a stacked structure of a substrate 10, a display layer DPL on the substrate 10, a touch electrode layer TEL, an optical function layer OFL, and a window CW. The display layer DPL may include a sub-pixel circuit layer PCL including thin film transistors TFT, a display element layer DEL including display elements, and a packaging member ENM such as a thin film encapsulation layer TFE or a packaging substrate. An insulating layer may be located between the substrate 10 and the display layer DPL or in the display layer DPL. The display element may include a light-emitting diode, and in an embodiment, Figure 3It is shown that the display element is an organic light-emitting diode. Hereinafter, it is described that the electronic device 1 includes an organic light-emitting diode (OLED) as the display element, but the embodiment is not limited thereto. In an embodiment, the display element may be an inorganic light-emitting diode including an inorganic material or a quantum dot light-emitting diode including quantum dots. For example, the emission layer of the display element may include an organic material, an inorganic material, quantum dots, an organic material and quantum dots, or an inorganic material and quantum dots.

[0060] The substrate 10 may include glass or a polymer resin. For example, the polymer resin may include at least one of polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, cellulose triacetate, and cellulose acetate propionate.

[0061] The sub-pixel circuit layer PCL may be disposed on the substrate 10. Figure 3 It is shown that the sub-pixel circuit layer PCL includes a thin-film transistor (TFT) and buffer layers 11, a first insulating layer 13a, a second insulating layer 13b, a third insulating layer 15, and a planarization layer 17 disposed below and / or above the components of the thin-film transistor TFT.

[0062] The buffer layer 11 may reduce or prevent foreign substances, moisture, or external air from penetrating from below the substrate 10, and may provide a flat surface on the substrate 10. The buffer layer 11 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, or silicon oxide, and may include a single layer or multiple layers containing the above inorganic insulating materials.

[0063] The thin-film transistor TFT on the buffer layer 11 may include a semiconductor layer 12, and the semiconductor layer 12 may include polysilicon. In another example, the semiconductor layer 12 may include amorphous silicon, an oxide semiconductor, or an organic semiconductor. The semiconductor layer 12 may include a channel region 12c and a drain region 12a and a source region 12b respectively located on the sides (e.g., opposite sides) of the channel region 12c. The gate electrode 14 may overlap with the channel region 12c.

[0064] The gate electrode 14 may include a low-resistance metal material. The gate electrode 14 may include a conductive material containing molybdenum (Mo), aluminum (Al), copper (Cu), titanium (Ti), or the like, and may include a multi-layer or a single layer containing the above materials.

[0065] The first insulating layer 13a may be located between the semiconductor layer 12 and the gate electrode 14. The first insulating layer 13a may include an inorganic insulating material such as silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiON), aluminum oxide (Al2O3), titanium oxide (TiO2), tantalum oxide (Ta2O5), hafnium oxide (HfO2), or zinc oxide (ZnO x)。 Zinc oxide (ZnO x ) may be ZnO and / or ZnO2.

[0066] The second insulating layer 13b may be provided to cover the gate electrode 14. The second insulating layer 13b may include an inorganic insulating material such as SiO x , SiN x , SiON, Al2O3, TiO2, Ta2O5, HfO2 or ZnO x .

[0067] An upper electrode Cst2 of the storage capacitor Cst may be provided on the second insulating layer 13b. The upper electrode Cst2 may at least partially overlap with the gate electrode 14 disposed therebelow. The gate electrode 14 and the upper electrode Cst2 overlapping each other and the second insulating layer 13b interposed therebetween may form the storage capacitor Cst. For example, the gate electrode 14 may be used as a lower electrode Cst1 of the storage capacitor Cst.

[0068] As described above, the storage capacitor Cst may overlap with the thin film transistor TFT. In another example, the storage capacitor Cst may not overlap with the thin film transistor TFT. For example, the lower electrode Cst1 of the storage capacitor Cst is a component separated from the gate electrode 14 and may be formed to be spaced apart from the gate electrode 14.

[0069] The upper electrode Cst2 may include aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W) and / or copper (Cu), and may include a single layer or multiple layers containing the above materials.

[0070] The third insulating layer 15 may cover the upper electrode Cst2. The third insulating layer 15 may include an inorganic insulating material such as SiO x , SiN x , SiON, Al2O3, TiO2, Ta2O5, HfO2 or ZnO x . The third insulating layer 15 may include a single layer or multiple layers containing the above inorganic insulating materials.

[0071] Each of the drain electrode 16a and the source electrode 16b may be disposed on the third insulating layer 15. The drain electrode 16a and the source electrode 16b may be respectively connected to the drain region 12a and the source region 12b through contact holes of the insulating layer thereunder. The drain electrode 16a and the source electrode 16b may include a material having excellent conductivity. The drain electrode 16a and the source electrode 16b may include a conductive material containing Mo, Al, Cu, Ti, or the like, and may include a multi-layer or single-layer containing the above conductive material. In an embodiment, the drain electrode 16a and the source electrode 16b may each include a multi-layer structure of Ti / Al / Ti.

[0072] The planarization layer 17 may include an organic insulating material. The planarization layer 17 may include an organic insulating material such as a general polymer (e.g., polymethyl methacrylate (PMMA) and polystyrene (PS)), a polymer derivative having a phenolic group, an acrylic polymer, an imide-based polymer, an aryl ether-based polymer, an amide-based polymer, a fluorine-containing polymer, a parylene polymer, a vinyl alcohol-based polymer, or any blend thereof.

[0073] The display element layer DEL may be disposed on the sub-pixel circuit layer PCL having the above structure. The display element layer DEL may include an organic light emitting diode OLED as a display element, and the organic light emitting diode OLED may include a stacked structure of a sub-pixel electrode 21, an emission layer 22, and a common electrode 23. The sub-pixel electrode 21 of the organic light emitting diode OLED may be electrically connected to the thin film transistor TFT (e.g., the source electrode 16b of the thin film transistor TFT) through a contact hole defined in the planarization layer 17.

[0074] The sub-pixel electrode 21 may include a conductive oxide material such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO), or aluminum zinc oxide (AZO). In an embodiment, the sub-pixel electrode 21 may include a reflective layer containing Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, or any compound thereof. In another example, the sub-pixel electrode 21 may further include a layer including ITO, IZO, ZnO, or In2O3 above / below the above reflective layer. In an embodiment, the sub-pixel electrode 21 may be the first electrode.

[0075] A bank layer 19 may be provided on the sub-pixel electrode 21, and the bank layer 19 has an opening 19OP that exposes at least a part of the sub-pixel electrode 21. The bank layer 19 may include an organic insulating material and / or an inorganic insulating material. The opening 19OP may define an emission region of light emitted from the organic light-emitting diode OLED. For example, the size and / or width of the opening 19OP may correspond to the size and / or width of the emission region. Therefore, the size and / or width of the sub-pixel PX may depend on the size and / or width of the opening 19OP of the corresponding bank layer 19.

[0076] The emission layer 22 may be disposed in the opening 19OP of the bank layer 19. The emission layer 22 may include a polymer organic material or a low molecular weight organic material that emits light of a certain color. In another example, the emission layer 22 may include an inorganic light-emitting material or quantum dots.

[0077] For example, a first functional layer and a second functional layer may be disposed below and above the emission layer 22. For example, the first functional layer may include a hole transport layer (HTL), or may include an HTL and a hole injection layer (HIL). The second functional layer may include an electron transport layer (ETL) and / or an electron injection layer (EIL). However, the embodiments are not limited thereto. The first functional layer and the second functional layer may be selectively disposed above and below the emission layer 22, respectively.

[0078] The first functional layer and / or the second functional layer may be a common layer formed to cover (e.g., completely cover) the substrate 10, such as the common electrode 23 to be described below.

[0079] The common electrode 23 may be provided on the sub-pixel electrode 21 and overlap the sub-pixel electrode 21. The common electrode 23 may include a conductive material having a low work function. For example, the common electrode 23 may include a transparent layer or a semi-transparent layer containing Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, lithium (Li), Ca, or any alloy thereof. In another example, the common electrode 23 may further include a layer such as ITO, IZO, ZnO, or In2O3 on the transparent layer or the semi-transparent layer including the above materials. The common electrode 23 may be formed as a single body to cover (e.g., completely cover) the substrate 10. In an embodiment, the common electrode 23 may be the second electrode.

[0080] The encapsulation member ENM may be provided on the display element layer DEL. In an embodiment, the encapsulation member ENM may include a thin film encapsulation layer TFE, as Figure 3 shown. However, the embodiments are not limited thereto. In another embodiment, the encapsulation member ENM may include an encapsulation substrate. For example, the encapsulation substrate may include glass. In an embodiment, the glass may include ultra-thin glass (UTG).

[0081] The thin film encapsulation layer TFE may be disposed on the display element layer DEL and may cover the display element layer DEL. The thin film encapsulation layer TFE may include at least one inorganic layer and at least one organic layer. In an embodiment, the thin film encapsulation layer TFE may include a first inorganic layer 31, an organic layer 32, and a second inorganic layer 33 that are sequentially stacked. The first inorganic layer 31 and the second inorganic layer 33 may each include one or more inorganic materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride. The organic layer 32 may include a polymer-based material. The polymer-based material may include an acrylic resin, an epoxy resin, a polyimide, and polyethylene. In an embodiment, the organic layer 32 may include an acrylate. The organic layer 32 may be formed by curing a monomer or applying a polymer.

[0082] The touch electrode layer TEL may be disposed on an encapsulation member ENM (e.g., the thin film encapsulation layer TFE). The touch electrode layer TEL may obtain coordinate information according to an external input (e.g., a touch event). The touch electrode layer TEL may include touch electrodes and traces connected to the touch electrodes. The touch electrode layer TEL may sense an external input by using a mutual capacitance method or a self-capacitance method.

[0083] The touch electrode layer TEL may be formed (e.g., directly formed) on the display element layer DEL, or may be formed separately and then joined by an adhesive member such as an optically clear adhesive (OCA). Figure 2 and Figure 3 It is shown that the touch electrode layer TEL is disposed between the display element layer DEL and the optical function layer OFL, but in another embodiment, the touch electrode layer TEL may be disposed above the optical function layer OFL.

[0084] The optical function layer OFL may reduce the reflectance of light (e.g., external light) incident on the electronic device 1 from the outside and may improve the color purity of the light emitted from the electronic device 1. In an embodiment, the optical function layer OFL may include a retarder and / or a polarizer. The retarder may include a film-type retarder or a liquid crystal coating-type retarder and may include a λ / 2 (half-wavelength) retarder and / or a λ / 4 (quarter-wavelength) retarder. For example, the polarizer may include a film-type polarizer or a liquid crystal coating-type polarizer. The film-type polarizer may include a stretched synthetic resin film, and the liquid crystal coating-type polarizer may include liquid crystals arranged in a certain array.

[0085] In an embodiment, the optical function layer OFL may include a destructive interference structure. The destructive interference structure may include a first reflective layer and a second reflective layer disposed on different layers. The first reflected light and the second reflected light reflected from the first reflective layer and the second reflective layer, respectively, may destructively interfere with each other, and thus, the reflectance of external light may be reduced.

[0086] The adhesive member may be disposed between the touch electrode layer TEL and the optical function layer OFL. For the adhesive member, a general adhesive member may be used without limitation. For example, the adhesive member may include an optically clear adhesive (OCA).

[0087] The window CW may be disposed on the optical function layer OFL. The window CW may be formed (e.g., directly formed) on the optical function layer OFL, or may be formed separately and then attached to the optical function layer OFL via an adhesive member disposed between the window CW and the optical function layer OFL. For example, the adhesive member may include an optically clear adhesive (OCA).

[0088] Figure 4 is a schematic cross-sectional view of the window CW according to an embodiment, and Figure 5 is a schematic cross-sectional view of the window CW according to an embodiment.

[0089] Referring to Figure 4 , the window CW may include a window substrate 100, an antireflection layer 200, an intermediate layer 300, and an anti-fingerprint layer 400.

[0090] The window substrate 100 may include glass or a polymer resin. In an embodiment, for example, the window substrate 100 may include a polymer resin such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. In an embodiment, the window substrate 100 may include an ultra-thin glass (UTG) having enhanced strength through chemical strengthening or thermal strengthening treatment.

[0091] The antireflection layer 200 may be disposed on the window substrate 100. The antireflection layer 200 may reduce the reflectance of light incident from the outside.

[0092] Referring to Figure 4 and Figure 5 , the antireflection layer 200 may have a stacked structure including sub-layers. In an embodiment, the sub-layers of the antireflection layer 200 may include a first sub-layer 210 containing a first inorganic insulating material and a second sub-layer 220 including a second inorganic insulating material different from the first inorganic insulating material.

[0093] The first inorganic insulating material of the first sub-layer 210 may include two or more types of inorganic insulating materials containing Al2O3. The first inorganic insulating material of the first sub-layer 210 may include Al2O3 as a main component. For example, based on the total weight of the first sub-layer 210, the first sub-layer 210 may include Al2O3 in the range of about 80 wt% or more. For example, the first sub-layer 210 may include Al2O3 in the range of about 80 wt% to about 99.9 wt%. For example, the first sub-layer 210 may include Al2O3 in the range of about 90 wt% to less than about 99.9 wt%.

[0094] The first inorganic insulating material of the first sub-layer 210 may include at least one inorganic insulating material containing an element other than aluminum as a minor component. The first inorganic insulating material of the first sub-layer 210 may include an oxide, nitride, or fluoride of at least one metal selected from yttrium, magnesium, zirconium, calcium, barium, titanium, tantalum, molybdenum, and germanium. In an embodiment, the first inorganic insulating material of the first sub-layer 210 may include yttrium oxide (Y2O3). The first inorganic insulating material of the first sub-layer 210 may include Y2O3 as a minor component. Based on the total weight of the first sub-layer 210, the first sub-layer 210 may include at least one inorganic insulating material containing an element other than aluminum in the range of about 0.1 wt% to about 20 wt%. For example, based on the total weight of the first sub-layer 210, the first sub-layer 210 may include Y2O3 in the range of about 0.1 wt% to about 20 wt%. For example, the first sub-layer 210 may include Y2O3 in the range of about 0.1 wt% to about 10 wt%.

[0095] The second inorganic insulating material of the second sub-layer 220 may include two or more types of inorganic insulating materials containing zirconium oxide (ZrO2). The second inorganic insulating material of the second sub-layer 220 may include ZrO2 as a main component. For example, based on the total weight of the second sub-layer 220, the second sub-layer 220 may include ZrO2 in the range of about 80 wt% or more. For example, the second sub-layer 220 may include ZrO2 in the range of about 80 wt% to about 99.9 wt%. For example, the second sub-layer 220 may include ZrO2 in the range of about 90 wt% to about 99.9 wt%.

[0096] The second inorganic insulating material of the second sub-layer 220 may include at least one inorganic insulating material containing an element other than zirconium as a minor component. The second inorganic insulating material of the second sub-layer 220 may include an oxide, nitride, or fluoride of at least one metal selected from among aluminum, yttrium, magnesium, calcium, barium, titanium, tantalum, molybdenum, and germanium. In an embodiment, the second inorganic insulating material of the second sub-layer 220 may include Ta2O5. The second inorganic insulating material of the second sub-layer 220 may include Ta2O5 as a minor component. Based on the total weight of the second sub-layer 220, the second sub-layer 220 may include at least one inorganic insulating material containing an element other than zirconium in the range of about 0.1 wt% to about 20 wt%. Based on the total weight of the second sub-layer 220, the second sub-layer 220 may include Ta2O5 in the range of about 0.1 wt% to about 20 wt%. For example, the second sub-layer 220 may include Ta2O5 in the range of about 0.1 wt% to about 10 wt%.

[0097] The first inorganic insulating material of the first sub-layer 210 may have a different refractive index from the second inorganic insulating material of the second sub-layer 220. In the case where the refractive index of the first inorganic insulating material is n1 and the refractive index of the second inorganic insulating material is n2, n1 < n2 may be satisfied.

[0098] The refractive index n1 of the first inorganic insulating material included in the first sub-layer 210 may be in the range of about 1.2 to about 2.0. For example, the refractive index n1 of the first inorganic insulating material may be in the range of about 1.4 to about 1.9. For example, the refractive index n1 of the first inorganic insulating material may be in the range of about 1.6 to about 1.8.

[0099] Figure 6 is a graph showing the refractive index of the first sub-layer 210 of the antireflection layer 200 included in the window CW according to an embodiment. For example, as Figure 6 shown, the refractive index n1 of the first inorganic insulating material included in the first sub-layer 210 may be about 1.65. For example, the refractive index n1 of the first inorganic insulating material at a wavelength of about 550 nm may be about 1.65.

[0100] The refractive index n2 of the second inorganic insulating material included in the second sub-layer 220 may be in the range of about 1.5 to about 2.6. For example, the refractive index n2 of the second inorganic insulating material may be in the range of about 1.7 to about 2.4. For example, the refractive index n2 of the second inorganic insulating material may be in the range of about 1.9 to about 2.2.

[0101] Figure 7 is a graph showing the refractive index of the second sub-layer 220 of the antireflection layer 200 included in the window CW according to an embodiment. For example, as Figure 7As shown, the refractive index n2 of the second inorganic insulating material included in the second sub-layer 220 may be about 2.06. For example, the refractive index n2 of the second inorganic insulating material at a wavelength of about 550 nm may be about 2.06.

[0102] Referring to Figure 5 , the antireflection layer 200 may have a structure in which the first sub-layer 210 and the second sub-layer 220 are alternately stacked. In an embodiment, Figure 5 shows that the antireflection layer 200 has an 8-layer structure, and the first sub-layer 210 includes four first sub-layers 211, 212, 213, and 214, and the second sub-layer 220 includes four second sub-layers 221, 222, 223, and 224. Hereinafter, for convenience of description, the four first sub-layers 211, 212, 213, and 214 may be respectively referred to as the first-1 sub-layer 211, the first-2 sub-layer 212, the first-3 sub-layer 213, and the first-4 sub-layer 214, and the four second sub-layers 221, 222, 223, and 224 may be respectively referred to as the second-1 sub-layer 221, the second-2 sub-layer 222, the second-3 sub-layer 223, and the second-4 sub-layer 224. The topmost layer of the antireflection layer 200 may be the first sub-layer 210. For example, Figure 5 shows that the topmost layer of the antireflection layer 200 may be the first-4 sub-layer 214.

[0103] The first-1 sub-layer 211, the first-2 sub-layer 212, the first-3 sub-layer 213, and the first-4 sub-layer 214 may include the same material as each other. In an embodiment, for example, the first-1 sub-layer 211, the first-2 sub-layer 212, the first-3 sub-layer 213, and the first-4 sub-layer 214 may include Al2O3 and Y2O3.

[0104] The thickness of each layer of the first sub-layer 210 may be in the range of about 8 nm to about 320 nm. When each layer of the first sub-layer 210 has a thickness within the above range, the bonding strength with the second sub-layer 220 or the intermediate layer 300 can be ensured, and the reflectivity of the window CW can be reduced.

[0105] The first - 1 sub - layer 211, the first - 2 sub - layer 212, the first - 3 sub - layer 213, and the first - 4 sub - layer 214 may have different thicknesses. For example, the thickness of the first - 4 sub - layer 214 may be less than the thickness of the first - 3 sub - layer 213, and the thickness of the first - 2 sub - layer 212 may be greater than the thickness of the first - 1 sub - layer 211. The thickness of the first - 2 sub - layer 212 may be less than the thickness of the first - 4 sub - layer 214. For example, in an embodiment, the thickness of the first - 1 sub - layer 211 may be in the range of about 36 nm to about 44 nm. The thickness of the first - 2 sub - layer 212 may be in the range of about 44 nm to about 55 nm. The thickness of the first - 3 sub - layer 213 may be in the range of about 73 nm to about 90 nm. The thickness of the first - 4 sub - layer 214 may be in the range of about 56 nm to about 69 nm. For example, the thickness of the first - 1 sub - layer 211 may be about 40 nm, the thickness of the first - 2 sub - layer 212 may be about 49.6 nm, the thickness of the first - 3 sub - layer 213 may be about 81.9 nm, and the thickness of the first - 4 sub - layer 214 may be about 62.5 nm. In an embodiment, when each of the first - 1 sub - layer 211 to the first - 4 sub - layer 214 has a thickness within the above - mentioned range, the window CW may have excellent reflectivity and transmittance (e.g., excellent profile reflectivity and transmittance).

[0106] The thickness of each layer of the second sub - layer 220 may be in the range of about 8 nm to about 320 nm. When each layer of the second sub - layer 220 has a thickness within the above - mentioned range, the bonding strength with the window substrate 100 or the first sub - layer 210 can be ensured, and the reflectivity of the window CW can be reduced.

[0107] The second-1 sublayer 221, the second-2 sublayer 222, the second-3 sublayer 223, and the second-4 sublayer 224 may have different thicknesses. For example, the thickness of the second-2 sublayer 222 may be greater than the thicknesses of the second-1 sublayer 221, the second-3 sublayer 223, and the second-4 sublayer 224. The thickness of the second-4 sublayer 224 may be greater than the thicknesses of the second-3 sublayer 223 and the second-1 sublayer 221. The thickness of the second-3 sublayer 223 may be less than the thickness of the second-1 sublayer 221. For example, in an embodiment, the thickness of the second-1 sublayer 221 may be in the range of about 13 nm to about 16 nm. The thickness of the second-2 sublayer 222 may be in the range of about 63 nm to about 78 nm. The thickness of the second-3 sublayer 223 may be in the range of about 9 nm to about 12 nm. The thickness of the second-4 sublayer 224 may be in the range of about 57 nm to about 70 nm. For example, the thickness of the second-1 sublayer 221 may be about 14.6 nm, the thickness of the second-2 sublayer 222 may be about 70.9 nm, the thickness of the second-3 sublayer 223 may be about 10.3 nm, and the thickness of the second-4 sublayer 224 may be about 63.4 nm. In an embodiment, when each of the second-1 sublayer 221 to the second-4 sublayer 224 has a thickness within the above ranges, the window CW may have excellent reflectance and transmittance (e.g., excellent profile reflectance and transmittance).

[0108] Although Figure 5 the antireflection layer 200 is shown to have an 8-layer structure, the embodiment is not limited thereto. For example, the antireflection layer 200 may have a 5-layer structure to a 13-layer structure.

[0109] The total thickness of the antireflection layer 200 may be in the range of about 230 nm to about 1300 nm.

[0110] In an embodiment, the antireflection layer 200 may include a first sublayer 210 and a second sublayer 220 including materials having different refractive indices, and may have a structure in which the first sublayer 210 and the second sublayer 220 are stacked. Accordingly, the antireflection layer 200 may exhibit low reflection characteristics. For example, when light incident from the outside passes through the sublayers having different refractive indices of the antireflection layer 200, the path of the light may be changed, and the light reflected from the sublayers (e.g., the first sublayer 210 and the second sublayer 220) of the antireflection layer 200 may interfere with each other destructively. Accordingly, the reflectance of the window CW including the antireflection layer 200 may be reduced.

[0111] In an embodiment, since the first inorganic insulating material of the first sub-layer 210 includes two or more types of inorganic insulating materials containing Al2O3, and the second inorganic insulating material of the second sub-layer 220 includes two or more types of inorganic insulating materials containing ZrO2, the hardness characteristics of the anti-reflection layer 200 can be improved. More specifically, although the anti-reflection layer 200 is formed by using an electron beam deposition method, the anti-reflection layer 200 can have excellent hardness characteristics. For example, the first sub-layer 210 may include Al2O3 and Y2O3, and the second sub-layer 220 may include ZrO2 and Ta2O5. Therefore, the anti-reflection layer 200 can have both low reflection characteristics and high hardness characteristics.

[0112] For example, the anti-reflection layer 200 can be formed by using sputtering, atomic layer deposition (ALD), spin coating, pulsed laser deposition, or electron beam (E-beam) vapor deposition methods. In an embodiment, the anti-reflection layer 200 can be formed by using an E-beam vapor deposition method. In the case where the anti-reflection layer 200 is formed by using an E-beam vapor deposition method, the hardness characteristics can deteriorate compared to the case of using a sputtering method. However, according to the embodiment, although an E-beam vapor deposition method is used, the anti-reflection layer 200 can have excellent hardness characteristics.

[0113] The intermediate layer 300 can be disposed between the anti-reflection layer 200 and the anti-fingerprint layer 400. The intermediate layer 300 can include an inorganic insulating material. The intermediate layer 300 can include an oxide, for example, SiO x . In an embodiment, the intermediate layer 300 can include silicon dioxide (SiO2).

[0114] The intermediate layer 300 can be a layer that binds the anti-reflection layer 200 and the anti-fingerprint layer 400. The thickness of the intermediate layer 300 can be in the range of about 10 nm to about 30 nm. For example, the thickness of the intermediate layer 300 can be in the range of about 15 nm to about 25 nm. In an embodiment, the thickness of the intermediate layer 300 can be about 20 nm. When the thickness of the intermediate layer 300 is less than about 10 nm, the bonding strength between the anti-reflection layer 200 and the intermediate layer 300 or between the intermediate layer 300 and the anti-fingerprint layer 400 is low, and thus, the intermediate layer 300 may peel off from the anti-reflection layer 200 or the anti-fingerprint layer 400. When the thickness of the intermediate layer 300 exceeds about 30 nm, the external light that undergoes destructive interference can be reduced, and the reflectivity of the window CW can be increased.

[0115] The refractive index of the intermediate layer 300 can be lower than the refractive index of the second sub-layer 220 of the anti-reflection layer 200. The refractive index of the intermediate layer 300 can be in the range of about 1.2 to about 1.8. For example, the refractive index of the intermediate layer 300 can be in the range of about 1.3 to about 1.7. In an embodiment, the refractive index of the intermediate layer 300 can be about 1.52.

[0116] For example, the intermediate layer 300 can be formed by using an electron beam physical vapor deposition (E-beam PVD) or sputtering method. In an embodiment, the intermediate layer 300 can be formed by using an E-beam PVD method.

[0117] The anti-fingerprint layer 400 can be disposed over the anti-reflection layer 200. In an embodiment, the anti-fingerprint layer 400 can include a material different from that of the anti-reflection layer 200. The anti-fingerprint layer 400 can include a fluorine-based compound. In an embodiment, the anti-fingerprint layer 400 can include perfluoropolyether (PFPE). However, the embodiments are not limited thereto.

[0118] The thickness of the anti-fingerprint layer 400 can be in the range of about 10 nm to about 40 nm. For example, the thickness of the anti-fingerprint layer 400 can be in the range of about 10 nm to about 30 nm. In an embodiment, the thickness of the intermediate layer 300 can be about 20 nm. When the thickness of the anti-fingerprint layer 400 is less than about 10 nm, the bonding strength between the anti-fingerprint layer 400 and the intermediate layer 300 is low, and thus, delamination can be facilitated. When the thickness of the anti-fingerprint layer 400 exceeds about 40 nm, the abrasion resistance of the window CW including the anti-fingerprint layer 400 can be reduced.

[0119] For example, the anti-fingerprint layer 400 can be formed by using an E-beam PVD, sputtering, thermal deposition, or spin coating method. In an embodiment, the anti-fingerprint layer 400 can be formed by using an E-beam PVD method.

[0120] Figure 8 is a graph showing the transmittance of the window according to the embodiment and the comparative example, and Figure 9 is a graph showing the reflectance of the window according to the embodiment and the comparative example.

[0121] In Figure 8 and Figure 9 the window CW in the embodiment can include the above-described window substrate 100, anti-reflection layer 200, intermediate layer 300, and anti-fingerprint layer 400, and a window substrate can be used in the comparative example. Compared with the comparative example, in the embodiment, the window CW can have an increased transmittance and a reduced reflectance (e.g., sectional reflectance). In an embodiment, the reflectance (e.g., sectional reflectance) of the window CW can be less than about 2.0%. For example, the reflectance (e.g., sectional reflectance) of the window CW can be less than about 1.7%. For example, the reflectance (e.g., sectional reflectance) of the window CW at a wavelength of about 450 nm to about 650 nm can be less than about 2%. The reflectance (e.g., sectional reflectance) of the window CW at a wavelength of about 550 nm can be less than about 1.7%.

[0122] In an embodiment, the transmittance of the window CW can be in the range of about 93% or greater. For example, the transmittance of the window CW can be in the range of about 93.5% or greater. For example, the transmittance of the window CW can be in the range of about 93.5% to about 96%. For example, the transmittance of the window CW at a wavelength of about 450 nm to about 650 nm can be in the range of about 93% or greater. The transmittance of the window CW at a wavelength of about 550 nm can be in the range of about 93.5% or greater.

[0123] In an embodiment, the surface hardness of the window CW can be in the range of about 10 GPa or greater. For example, the surface hardness of the window CW can be in the range of about 11 GPa to about 16 GPa.

[0124] Table 1 is a table showing the hardness measurement results of Embodiment 1 to Embodiment 5, and Table 2 is a table showing the hardness measurement results of Comparative Example 1 and Comparative Example 2.

[0125] [Table 1]

[0126]

[0127]

[0128] [Table 2]

[0129]

[0130] In Embodiment 1 to Embodiment 5, the window CW may include a window substrate 100, an antireflection layer 200, an intermediate layer 300, and an antifingerprint layer 400. The antireflection layer 200 may have a structure in which a first sublayer 210 including Al2O3 as a main component and Y2O3 as a minor component and a second sublayer 220 including ZrO2 as a main component and Ta2O5 as a minor component are alternately stacked, and is formed by using an electron beam vapor deposition method. The window substrate 100 may include glass, the intermediate layer 300 may include SiO2, and the antifingerprint layer 400 may include perfluoropolyether (PFPE).

[0131] In Comparative Example 1 and Comparative Example 2, the window may include a window substrate, an antireflection layer, an intermediate layer, and an antifingerprint layer. The antireflection layer has a structure in which a first sublayer including Al2O3 and a second sublayer including ZrO2 as a main component and Ta2O5 as a minor component are alternately stacked, and is formed by using an electron beam vapor deposition method. The window substrate may include glass, the intermediate layer may include SiO2, and the antifingerprint layer may include perfluoropolyether (PFPE).

[0132] Then, the surface hardness was measured for Embodiments 1 to 5 and Comparative Examples 1 and 2. By using a nanoindentation test, the hardness was measured at an indentation depth of about 100 nm to about 300 nm. The results are shown in Tables 1 and 2.

[0133] Referring to Tables 1 and 2, it can be determined that in Embodiments 1 to 5, the surface hardness was all measured in the range of about 10 GPa or greater. For example, in Embodiments 1 to 5, the surface hardness measured at an indentation depth in the range of about 100 nm to about 300 nm was shown to be in the range of about 11 GPa or greater. In contrast, it can be determined that in Comparative Examples 1 and 2, the surface hardness was measured to be less than about 9 GPa. For example, it can be determined that in Comparative Examples 1 and 2, the surface hardness measured at an indentation depth of 100 nm was less than about 8 GPa, and the surface hardness measured at an indentation depth of about 200 nm to about 300 nm was in the range of about 8 GPa to about 9 GPa.

[0134] In an embodiment, the first inorganic insulating material of the first sub-layer 210 included in the antireflection layer 200 of the window CW may include two or more types of inorganic insulating materials containing Al2O3, and the second inorganic insulating material of the second sub-layer 220 may include two or more types of inorganic insulating materials containing ZrO2. For example, the first sub-layer 210 may include Al2O3 and Y2O3, and the second sub-layer 220 may include ZrO2 and Ta2O5. According to the embodiment, although the antireflection layer 200 is formed by using an electron beam physical vapor deposition method, the antireflection layer 200 may have excellent hardness characteristics. The window CW including the above antireflection layer 200 may have excellent hardness characteristics. For example, the window CW may have a surface hardness of about 10 GPa or greater.

[0135] Table 3 is a table showing the initial contact angle evaluation results and wear resistance evaluation results of Embodiments 1 and 2.

[0136] [Table 3]

[0137]

[0138]

[0139] For Embodiment 1 and Embodiment 2, the initial contact angle is evaluated, and then the abrasion resistance is evaluated. First, for Embodiment 1 and Embodiment 2, the initial contact angle is evaluated by dropping water on the surface of the fingerprint-resistant layer 400 without applying friction and then measuring the contact angle of the fingerprint-resistant layer 400 with respect to water. The abrasion resistance is evaluated by rubbing an eraser manufactured by Moonbangsawoo Co., Ltd. 3000 times under the condition of a friction length of about 15 mm at a speed of about 40 times per minute while applying a load of 1 kg, and then measuring the contact angle of the fingerprint-resistant layer 400 with respect to water. For example, the contact angle of the surface of the fingerprint-resistant layer 400 with respect to water is measured. For example, when the contact angle of the fingerprint-resistant layer 400 with respect to water is about 100° or greater, it is determined that the evaluation criteria are met.

[0140] Referring to Table 3, the initial contact angle in Embodiment 1 was measured to be about 116° or greater, and the initial contact angle in Embodiment 2 was measured to be about 120° or greater. Even after evaluating the abrasion resistance, the contact angles with respect to water in Embodiment 1 and Embodiment 2 were measured to be about 112.7° and about 113.8°, respectively, both of which were at least about 112°. For example, it can be determined that in Embodiment 1 and Embodiment 2, even after evaluating the abrasion resistance, the contact angle is about 100° or greater, and thus the evaluation criteria are met. For example, it can be verified that the window CW according to the embodiment has excellent reliability.

[0141] As described above, one or more embodiments have been described with reference to the drawings, but these embodiments should be considered only in a descriptive sense. Those of ordinary skill in the art will understand that various modifications and changes can be made to the embodiments. Therefore, the true technical protection scope of the present disclosure should be defined by the technical spirit of the appended claims.

[0142] According to one or more of the above embodiments, a window CW having high hardness and low reflection characteristics and a display panel DP including the window CW can be achieved. However, the scope of the present disclosure is not limited to the above effects.

[0143] At the end of the detailed description, those skilled in the art will recognize that many changes and modifications can be made to the embodiments without substantially departing from the principles, spirit, and scope of the present disclosure. Therefore, the disclosed embodiments are used only in a general and descriptive sense and not for the purpose of limitation.

Claims

1. A window, comprising: a window substrate; an antireflection layer disposed on the window substrate; an antifingerprint layer disposed above the antireflection layer; and an intermediate layer disposed between the antireflection layer and the antifingerprint layer, wherein the antireflection layer comprises: a first sublayer comprising a first inorganic insulating material, and a second sublayer comprising a second inorganic insulating material different from the first inorganic insulating material, and the first inorganic insulating material comprises two or more types of inorganic insulating materials containing alumina.

2. The window according to claim 1, wherein, The first inorganic insulating material comprises yttrium oxide.

3. The window according to claim 1, wherein, Based on the total weight of the first sublayer, the first sublayer comprises at least 80 wt% of alumina.

4. The window according to claim 1, wherein, The second inorganic insulating material comprises two or more types of inorganic insulating materials containing zirconia.

5. The window according to claim 4, wherein, The second inorganic insulating material comprises tantalum oxide.

6. The window according to claim 4, wherein, Based on the total weight of the second sublayer, the second sublayer comprises at least 80 wt% of zirconia.

7. The window according to any one of claims 1 to 6, wherein, The antireflection layer has a structure in which the first sublayer and the second sublayer are alternately stacked with each other.

8. The window according to any one of claims 1 to 6, wherein, The refractive index of the first sublayer is less than the refractive index of the second sublayer.

9. The window according to any one of claims 1 to 6, wherein The refractive index of the first sublayer is in the range of 1.2 to 2.

0.

10. The window according to any one of claims 1 to 6, wherein, The refractive index of the second sublayer is in the range of 1.5 to 2.

6.

11. The window according to any one of claims 1 to 6, wherein, The window has a reflectance of less than 2.0%.

12. The window according to any one of claims 1 to 6, wherein, The window has a surface hardness of 10 GPa or greater.

13. A display panel, comprising: a substrate; a display element disposed in a display area of the substrate, the display element comprising a first electrode, a second electrode, and an emission layer disposed between the first electrode and the second electrode; a packaging member disposed on the display element; and a window disposed on the packaging member, wherein the window comprises: a window substrate; an antireflection layer disposed on the window substrate; an antifingerprint layer disposed above the antireflection layer; and an intermediate layer disposed between the antireflection layer and the antifingerprint layer, the antireflection layer comprises: a first sublayer comprising a first inorganic insulating material, and a second sublayer comprising a second inorganic insulating material different from the first inorganic insulating material, and the first inorganic insulating material comprises two or more types of inorganic insulating materials containing alumina.

14. The display panel according to claim 13, wherein, The first inorganic insulating material comprises yttrium oxide.

15. The display panel according to claim 13, wherein, Based on the total weight of the first sublayer, the first sublayer comprises at least 80 wt% of alumina.

16. The display panel according to claim 13, wherein, The second inorganic insulating material comprises two or more types of inorganic insulating materials containing zirconia.

17. The display panel according to claim 16, wherein, The second inorganic insulating material comprises tantalum oxide.

18. The display panel according to any one of claims 13 to 17, wherein The antireflection layer has a structure in which the first sublayer and the second sublayer are alternately stacked with each other.

19. The display panel according to any one of claims 13 to 17, wherein The refractive index of the first sublayer is less than the refractive index of the second sublayer.

20. The display panel according to any one of claims 13 to 17, wherein, The refractive index of the first sublayer is in the range of 1.2 to 2.

0.

21. The display panel according to any one of claims 13 to 17, wherein, The window has a reflectance of less than 2.0%.

22. The display panel according to any one of claims 13 to 17, wherein, The window has a surface hardness of 10 GPa or greater.

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