Air inlet system for thin film deposition equipment and thin film deposition equipment
By setting up valve cores and using insulating materials in the secondary air intake structure of the film deposition equipment, the problem of reactive gas reflux is solved, the film deposition quality and the applicability of the equipment are improved, and the maintenance process is simplified.
Patent Information
- Application Number
- CN202510732855.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-06-03
- Publication Date
- 2025-07-11
AI Technical Summary
In thin film deposition equipment, the air pressure change in the reaction chamber causes the reflux of the reaction gas, affecting the quality of the film deposition, and the air pressure of the secondary air inlet is lower than the air pressure in the chamber, causing the film to be deposited on the inner wall of the intake pipe, especially on the radio frequency driving electrode, which reduces the grounding resistance.
A valve core is provided in the intake passage of the secondary intake structure, and the valve core is switched between the conduction and sealing positions. According to the air pressure difference between the reaction chamber and the intake passage, gas flow is controlled to prevent gas reflux, and an insulating material is used to isolate the radio frequency driving electrode.
Effectively prevent reflux of reaction gas, improve film deposition quality, simplify structure, reduce maintenance costs, and improve the applicability and flexibility of intake passages.
Smart Images
Figure CN120291064A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of semiconductor manufacturing, and particularly to an intake system for a thin film deposition device and a thin film deposition device. Background Art
[0002] Currently, thin film deposition devices are widely used in semiconductor chip manufacturing. For example, in Plasma Enhanced Chemical Vapor Deposition (PECVD) devices, reaction gases are distributed and transported to the reaction chamber through a gas supply system, and a thin film is deposited under the enhancement of plasma.
[0003] Among them, the reaction chamber is usually provided with a main intake port and multiple secondary intake ports. Most of the reaction gases required in the deposition process are transported, premixed, and injected into the reaction chamber through the main intake port by the gas supply system, and a small part of the reaction gases are injected into the reaction chamber through the secondary intake ports.
[0004] In the process of implementing the embodiments of the present disclosure, it is found that there are at least the following problems in the related art:
[0005] During the deposition process, the air pressure in the reaction chamber usually changes continuously. After the reaction gases at the main intake port are injected into the reaction chamber, the air pressure in the reaction chamber will rise rapidly, while the gas injection flow rate at the secondary intake ports is small, and its air pressure is lower than that in the reaction chamber. In this way, part of the reaction gases in the reaction chamber will carry the reactant particles required for depositing the thin film and flow back to the secondary intake ports, and finally a thin film is deposited on the inner wall of the secondary intake pipeline.
[0006] In addition, when the secondary intake port is located on the radio frequency driving electrode and the type of the deposited thin film is a conductive film, since the intake pipeline is a grounded metal pipe, a conductive film will gradually form on the inner wall of the insulation isolation layer provided between the radio frequency electrode and the intake pipeline. In this way, the grounding resistance of the radio frequency driving electrode will be reduced, or even directly conducted, thus affecting the thin film deposition quality.
[0007] It should be noted that the information disclosed in the above background art section is only used to enhance the understanding of the background of the present application, and thus may include information that does not constitute the prior art known to those of ordinary skill in the art. Summary of the Invention
[0008] To provide a basic understanding of some aspects of the disclosed embodiments, a simple summary is given below. The summary is not a comprehensive review, nor is it intended to identify key / important elements or delineate the scope of protection of these embodiments. Instead, it serves as a prelude to the detailed description that follows.
[0009] Embodiments of the present disclosure provide an intake system for a thin film deposition apparatus and a thin film deposition apparatus, which can effectively reduce the gas reflux from the reaction chamber into the intake channel, improve the cleanliness of the chamber, and thus improve the thin film deposition quality.
[0010] In some embodiments, for the intake system of the thin film deposition apparatus, the thin film deposition apparatus includes a reaction chamber, and the intake system includes a main intake structure and a secondary intake structure. The main intake structure is configured to input a first flow rate of process gas into the reaction chamber; the secondary intake structure is configured to input a second flow rate of process gas into the reaction chamber. The secondary intake structure includes a plurality of intake channels, and the plurality of intake channels are disposed at one or more positions of the top, bottom, and side of the reaction chamber. A valve core capable of switching between a blocking position and a conducting position is respectively disposed in each intake channel. Wherein, the thrust and the thrust direction received by the valve core are determined according to the air pressure in the reaction chamber and the air pressure in the intake channel, so that the valve core is located in the conducting position through the thrust and the thrust direction received by the valve core, and the intake channel is communicated with the reaction chamber; or, the valve core is located in the blocking position, and the intake channel is isolated from the reaction chamber.
[0011] In some embodiments, determining the thrust and the thrust direction received by the valve core according to the air pressure in the reaction chamber and the air pressure in the intake channel includes:
[0012] When P1 > P2, the thrust received by the valve core is F1, and F1 > G, or, F1 > μ, and the thrust direction is from the reaction chamber side to the intake channel side;
[0013] When P1 < P2, the thrust received by the valve core is F2, and F2 > G, or, F2 > μ, and the thrust direction is from the intake channel side to the reaction chamber side;
[0014] When P1 = P2, the thrust received by the valve core is 0;
[0015] Wherein, P1 is the air pressure on the reaction chamber side, P1 is the air pressure on the intake channel side, G is the gravity of the valve core in the plurality of intake channels disposed at the top or bottom of the reaction chamber, and μ is the friction between the valve core and the intake channel in the plurality of intake channels disposed at the side of the reaction chamber.
[0016] In some embodiments, the secondary intake structure further includes a first connection body and a second connection body. The first connection body is provided with a first channel; the second connection body is provided with a second channel; wherein, the first connection body and the second connection body are cooperatively connected so that the first channel and the second channel form an intake channel.
[0017] In some embodiments, the first connection body further includes a first limiting structure surrounding the first channel. When the valve core is in the blocking position, the valve core cooperates with the first limiting structure to block the first channel, so that the intake channel is isolated from the reaction chamber.
[0018] In some embodiments, the second connection body further includes a second limiting structure disposed around the second passage. When the valve core is in the conducting position, the valve core cooperates with the second limiting structure to conduct the first passage and the second passage, so that the intake passage is in communication with the reaction chamber.
[0019] In some embodiments, when the intake passage is provided at the top of the reaction chamber, the first limiting structure includes a first limiting concave surface disposed around the first passage, and the valve core includes a first conical flap; wherein, the convex surface of the first conical flap cooperates with the first limiting concave surface to block the first passage.
[0020] In some embodiments, the second limiting structure includes a first limiting platform and a first overlapping platform. The first limiting platform is disposed around the second passage; the first overlapping platform is disposed on the side of the first limiting platform, and a first ventilation gap is provided on the circumferential side of the first overlapping platform; wherein, the edge of the first conical flap can overlap with the first overlapping platform, so that there is a distance between the concave surface of the first conical flap and the first limiting platform, and the intake passage is in communication with the reaction chamber through the first ventilation gap.
[0021] In some embodiments, when the intake passage is provided at the side of the reaction chamber, the first limiting structure includes a second limiting concave surface and a guiding surface disposed around the first passage, the valve core includes a second conical flap, and the second conical flap has a smooth portion; wherein, the smooth portion of the second conical flap cooperates with the guiding surface, and the convex surface of the second conical flap cooperates with the second limiting concave surface to block the first passage.
[0022] In some embodiments, the second limiting structure includes a second limiting platform and a second overlapping platform. The second limiting platform is disposed around the second passage; the second overlapping platform is disposed on the side of the second limiting platform, and a second ventilation gap is provided on the side of the second overlapping platform; wherein, the edge of the second conical flap can overlap with the second overlapping platform, so that there is a distance between the concave surface of the second conical flap and the second limiting platform, and the intake passage is in communication with the reaction chamber through the second ventilation gap.
[0023] In some embodiments, when the intake passage is provided at the bottom of the reaction chamber, the valve core includes a spherical stopper or a conical stopper; the first limiting structure includes a third limiting concave surface disposed around the first passage; wherein, the convex surface of the conical stopper cooperates with the third limiting concave surface; or, the arc surface of the spherical stopper cooperates with the third limiting concave surface to block the first passage.
[0024] In some embodiments, the second limiting structure includes a third limiting platform. The third limiting platform surrounds the second channel. A defined distance is provided between the tabletop of the third limiting platform and the valve core; alternatively, a third ventilation gap communicating the second channel and the first channel is formed on the third limiting platform, so as to conduct the intake channel and the reaction chamber through the defined distance or the third ventilation gap.
[0025] In some embodiments, the materials of the first connection body, the second connection body, and the valve core include insulating materials.
[0026] In some embodiments, the auxiliary intake structure further includes a connection structure and a connection and cooperation structure. The connection structure is disposed on the first connection body and surrounds the first channel; the connection and cooperation structure is disposed on the second connection body and surrounds the second channel; wherein, the connection structure is connected to the connection and cooperation structure so that the first channel and the second channel form an intake channel.
[0027] In some embodiments, the connection position of the connection structure and the connection and cooperation structure is subjected to a sealing treatment.
[0028] In some embodiments, the thin film deposition apparatus includes a reaction chamber and an intake system for a thin film deposition apparatus as described in the foregoing embodiments.
[0029] The intake system for a thin film deposition apparatus and the thin film deposition apparatus provided by the embodiments of the present disclosure can achieve the following technical effects:
[0030] By respectively providing a valve core in each intake channel of the auxiliary intake structure, the valve core can be switched between a conducting position for conducting the intake channel and a blocking position for blocking the intake channel. In this way, it can effectively prevent the reaction gas in the reaction chamber from entering the auxiliary intake structure, thereby preventing the deposition of a thin film on the inner walls of the intake channel and other channels communicating with the intake channel, and affecting the thin film deposition quality. At the same time, the valve core can flexibly move according to the air pressure in the reaction chamber. Compared with the structure that independently controls the on-off of the intake channel, the structure of the present application is simpler, easier to maintain, and has a lower cost. In addition, the intake channels of the auxiliary intake structure can be disposed at the top, bottom, and / or side of the reaction chamber. In this way, intake can be performed from different positions according to different process requirements, thereby improving its applicability.
[0031] The above general description and the following description are only exemplary and explanatory, and are not used to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS
[0032] One or more embodiments are exemplarily illustrated by corresponding drawings. These exemplary illustrations and the drawings do not constitute a limitation on the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements. The drawings do not constitute a proportional limitation, and wherein:
[0033] Figure 1 It is a schematic structural diagram of an air intake system for a thin film deposition device provided by an embodiment of the present disclosure;
[0034] Figure 2 It is a schematic structural diagram of an air intake passage provided by an embodiment of the present disclosure;
[0035] Figure 3 It is a schematic diagram of the gas flow direction of an air intake passage provided by an embodiment of the present disclosure Figure 1 ;
[0036] Figure 4 It is a schematic diagram of the gas flow direction of an air intake passage provided by an embodiment of the present disclosure Figure 2 ;
[0037] Figure 5 It is a schematic diagram of the gas flow direction of another air intake passage provided by an embodiment of the present disclosure Figure 1 ;
[0038] Figure 6 It is a schematic diagram of the gas flow direction of another air intake passage provided by an embodiment of the present disclosure Figure 2 ;
[0039] Figure 7 It is a schematic diagram of the gas flow direction of another air intake passage provided by an embodiment of the present disclosure Figure 1 ;
[0040] Figure 8 It is a schematic diagram of the gas flow direction of another air intake passage provided by an embodiment of the present disclosure Figure 2 ;
[0041] Figure 9 It is a schematic diagram of the gas flow direction of another air intake passage provided by an embodiment of the present disclosure Figure 1 ;
[0042] Figure 10 It is a schematic diagram of the gas flow direction of another air intake passage provided by an embodiment of the present disclosure Figure 2 .
[0043] Reference numerals:
[0044] 100: reaction chamber; 101: upper electrode; 102: lower electrode; 103: plasma; 200: wafer;
[0045] 10: main air intake structure;
[0046] 20: auxiliary air intake structure; 21: air intake passage; 211: air intake port; 212: air outlet port; 22: first connection body; 221: first passage; 222: connection structure; 23: second connection body; 231: second passage; 232: connection and cooperation structure;
[0047] 30: Spool; 31: First conical baffle; 32: Second conical baffle; 33: Spherical block; 34: Conical block;
[0048] 40: First limiting structure; 41: First limiting concave surface; 42: Second limiting concave surface; 43: Guide surface; 44: Third limiting concave surface;
[0049] 50: Second limiting structure; 51: First limiting platform; 52: First lapping platform; 53: First ventilation notch; 54: Second limiting platform; 55: Second lapping platform; 56: Second ventilation notch; 57: Third limiting platform; 58: Third ventilation notch;
[0050] 60: Sealing ring. Detailed implementation mode
[0051] In order to more comprehensively understand the features and technical content of the embodiments of the present disclosure, the implementation of the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. The attached drawings are for reference and illustration only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the convenience of explanation, multiple details are provided to fully understand the disclosed embodiments. However, one or more embodiments can still be implemented without these details. In other cases, well-known structures and devices can be shown in a simplified manner.
[0052] In the embodiments of the present disclosure, terms such as "first" and "second" in the description and claims of the embodiments of the present disclosure and the above-mentioned drawings are used to distinguish similar objects and do not necessarily need to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances so as to implement the embodiments of the present disclosure described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion.
[0053] In the embodiments of the present disclosure, the orientation or positional relationship indicated by terms such as "upper", "lower", "inner", "middle", "outer", "front", and "rear" is based on the orientation or positional relationship shown in the accompanying drawings. These terms are mainly used to better describe the embodiments of the present disclosure and their embodiments and are not used to limit that the indicated devices, elements, or components must have a specific orientation or be constructed and operated in a specific orientation. And, in addition to being able to represent the orientation or positional relationship, some of the above terms may also be used to represent other meanings. For example, the term "upper" may also be used to represent a certain attachment relationship or connection relationship in some cases. For those of ordinary skill in the art, the specific meanings of these terms in the embodiments of the present disclosure can be understood according to specific circumstances.
[0054] In addition, the terms "arranged", "connected", and "fixed" should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to specific circumstances.
[0055] Unless otherwise specified, the term "plurality" means two or more.
[0056] In the embodiments of the present disclosure, the character " / " indicates that the objects before and after are in an "or" relationship. For example, A / B means: A or B.
[0057] The term "and / or" is an associative relationship describing objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or, the three relationships of A and B.
[0058] It should be noted that, without conflict, the embodiments in the embodiments of the present disclosure and the features in the embodiments can be combined with each other.
[0059] Combined Figure 1 and Figure 2 As shown, the embodiments of the present disclosure provide an intake system for a thin film deposition device. The thin film deposition device includes a reaction chamber 100, and the intake system includes a main intake structure 10 and a secondary intake structure 20. The main intake structure 10 is configured to input a first flow rate of process gas into the reaction chamber 100; the secondary intake structure 20 is configured to input a second flow rate of process gas into the reaction chamber 100. The secondary intake structure 20 includes a plurality of intake channels 21. The plurality of intake channels 21 are arranged at one or more positions of the top, bottom, and side of the reaction chamber 100, and a valve core 30 capable of switching between a blocking position and a conducting position is respectively arranged in each intake channel 21; wherein, the thrust and the thrust direction received by the valve core 30 are determined according to the air pressure in the reaction chamber 100 and the air pressure in the intake channel 21, so that the valve core 30 is located at the conducting position through the thrust and the thrust direction received by the valve core 30, and the intake channel 21 and the reaction chamber are conducted; or, the valve core 30 is located at the blocking position, and the intake channel 21 and the reaction chamber 100 are isolated.
[0060] By adopting the intake system for thin-film deposition equipment provided by the embodiments of the present disclosure, a valve core 30 is respectively arranged in each intake channel 21 of the secondary intake structure 20, and the valve core 30 can be switched between a conducting position for conducting the intake channel 21 and a blocking position for blocking the intake channel 21. In this way, it can effectively prevent the reaction gas in the reaction chamber 100 from entering the secondary intake structure 200, thereby preventing the deposition of thin films on the inner walls of the intake channel 21 and other channels communicating with the intake channel 21, and affecting the thin-film deposition quality. At the same time, the valve core 30 can flexibly move according to the air pressure in the reaction chamber. Compared with the structure that independently controls the on-off of the intake channel 21, the structure of the present application is simpler, easier to maintain, and has lower costs. In addition, the intake channels 21 of the secondary intake structure can be arranged at the top, bottom, and / or side of the reaction chamber. In this way, intake can be carried out from different positions according to different process requirements, thereby improving its applicability.
[0061] In the embodiments of the present disclosure, Figure 1 is the basic structure of the process chamber of an inductively coupled plasma chemical vapor deposition machine. A first flow rate of process gas is injected into the reaction chamber 100 through the main intake structure 10, and a second flow rate of process gas is injected into the reaction chamber 100 through the secondary intake structure 20. Among them, the first flow rate is greater than the second flow rate, and the process gas injected into the reaction chamber 100 reacts and deposits a thin film under the enhancement of the plasma 103.
[0062] Here, the process gas is also the reaction gas, and an upper electrode 101 and a lower electrode 102 are further arranged in the reaction chamber 100. The wafer is located above the lower electrode 102, so as to deposit a thin film on the wafer.
[0063] In the embodiments of the present disclosure, the main intake structure 10 is provided with corresponding gas channels, and one or more main gas outlets communicating with the gas channels of the main intake structure 10 are arranged in the reaction chamber 100. The secondary intake structure 20 can share a gas channel with the main intake structure 10, or is separately provided with a gas channel. In this way, the gas channel of the main intake structure 10 communicates with a plurality of intake channels 21, or the separately provided gas channel communicates with the intake channels 21.
[0064] In the embodiments of the present disclosure, a plurality of auxiliary gas outlets communicating with the intake channels 21 are arranged in the reaction chamber 100. Here, the secondary intake structure 20 is mainly used to assist the main intake structure 10 and introduce a small amount of process gas in cooperation with the process gas introduced by the main intake structure 10 to meet different process requirements.
[0065] In the embodiments of the present disclosure, the setting position of the intake port of the secondary intake structure 20 can be adjusted according to the actual process.
[0066] In the embodiments of the present disclosure, the intake passage 21 is disposed at one or more positions among the top, bottom, and side portions of the reaction chamber 100. Optionally, the intake passage 21 is disposed at the top of the reaction chamber 100. Optionally, the intake passage 21 is disposed at the bottom of the reaction chamber 100. Optionally, the intake passage 21 is disposed at the side of the reaction chamber 100. Optionally, the intake passage 21 is disposed at the top and bottom of the reaction chamber 100. Optionally, the intake passage 21 is disposed at the top and side of the reaction chamber 100. Optionally, the intake passage 21 is disposed at the bottom and side of the reaction chamber 100. Optionally, the intake passage 21 is disposed at the top, bottom, and side of the reaction chamber 100.
[0067] In this way, air can be supplied from multiple positions of the reaction chamber 100 to meet different process requirements. And a valve core 30 capable of switching between a blocking position and a conducting position is respectively disposed in each intake passage 21. In this way, by the movement of the valve core 30, the on-off of the intake passage 21 can be controlled. Therefore, by the provided valve core 30, gas backflow into the intake passage 21, as well as the shared gas passage or the individual gas passage, can be prevented.
[0068] In the embodiments of the present disclosure, according to the change conditions of the air pressure in the reaction chamber 100 and the air pressure in the intake passage 21, the valve core 30 can be located at different positions. In this way, gas backflow can be prevented more effectively and timely. Specifically, according to the air pressure of the reaction chamber 100 and the air pressure of the intake passage 21, the thrust and the thrust direction received by the valve core 30 are determined, so that through the thrust and the thrust direction received by the valve core 30, the valve core 30 is located at the conducting position, and the intake passage 21 and the reaction chamber are conducted; or, the valve core 30 is located at the blocking position, and the intake passage 21 and the reaction chamber 100 are isolated.
[0069] Specifically, when P1 > P2, the thrust received by the valve core 30 is F1, and F1 > G, or, F1 > μ, and the thrust direction is from the side of the reaction chamber 100 to the side of the intake passage 21; when P1 < P2, the thrust received by the valve core 30 is F2, and F2 > G, or, F2 > μ, and the thrust direction is from the side of the intake passage 21 to the side of the reaction chamber 100; when P1 = P2, the thrust received by the valve core 30 is 0.
[0070] Wherein, P1 is the air pressure on the reaction chamber side, P1 is the air pressure on the intake passage side, G is the gravity of the valve cores in the multiple intake passages disposed at the top or bottom of the reaction chamber, and μ is the friction force between the valve cores in the multiple intake passages disposed at the side of the reaction chamber and the intake passage.
[0071] In the embodiments of the present disclosure, due to the different air pressures on the reaction chamber side and the intake passage side, the thrust and the thrust direction received by the valve core 30 are different. Here, when P1 > P2, the received thrust F1 > G, or F1 > μ, can push the valve core 30 to move from the reaction chamber side to the intake passage side. If the received thrust F1 < G, or F1 < μ, then the valve core 30 cannot be pushed. If F1 = G, or F1 = μ, then the valve core 30 may be stationary at any position between the blocking position and the conducting position. When P1 > P2, the way to push the valve core 30 is the same as the above way, and will not be elaborated here.
[0072] In the embodiments of the present disclosure, when P1 = P2, the thrust received by the valve core 30 is 0. At this time, the valve core 30 in the plurality of intake passages 21 provided at the top or bottom of the reaction chamber 100 can fall to the bottom of the intake passage by its own gravity. The valve core 30 in the plurality of intake passages 21 provided at the side of the reaction chamber 100 is in a stationary state.
[0073] Combined with Figure 2 As shown, in some embodiments, the auxiliary intake structure 20 further includes a first connection body 22 and a second connection body 23. The first connection body 22 is provided with a first channel 221; the second connection body 23 is provided with a second channel 231; wherein, the first connection body 22 and the second connection body 23 are cooperatively connected so that the first channel 221 and the second channel 231 form the intake passage 21.
[0074] In the embodiments of the present disclosure, the first connection body 22 and the second connection body 23 are provided on the reaction chamber 100. Wherein, the first connection body 22 is provided with a first channel 221, the second connection body 23 is provided with a second channel 231, and the first channel 221 and the second channel 231 form the intake passage 21. Here, the intake passage 21 is further provided with an air inlet 211 and an air outlet 212, wherein the air inlet 211 is communicated with the gas passage shared by the main intake structure 10 or a separate gas passage, and the air outlet 212 is the auxiliary air outlet on the reaction chamber 100.
[0075] Combined with Figure 2 As shown, in some embodiments, the auxiliary intake structure 20 further includes a connection structure 222 and a connection and cooperation structure 232. The connection structure 222 is provided on the first connection body 22 and surrounds the first channel 221; the connection and cooperation structure 232 is provided on the second connection body 23 and surrounds the second channel 231; wherein, the connection structure 222 is connected to the connection and cooperation structure 232 so that the first channel 221 and the second channel 231 form the intake passage 21.
[0076] In the embodiments of the present disclosure, the first connection body 22 and the second connection body 23 are connected through the connection structure 222 and the connection and cooperation structure 232. Among them, one of the connection structure 222 and the connection and cooperation structure 232 is an annular connection groove, and the other is an annular connection convex. The annular connection convex is snapped into the annular connection groove to achieve connection.
[0077] In some embodiments, the connection position between the connection structure 222 and the connection and cooperation structure 232 is subjected to a sealing treatment. Specifically, as shown in Figure 2 Shown, a sealing ring 60 is also provided at the connection position between the connection structure 222 and the connection and cooperation structure 232. By providing the sealing ring 60, it is possible to prevent air leakage and other situations from occurring at the connection between the first channel 221 and the second channel 231, and to ensure the sealing performance of the intake air channel 21.
[0078] In some embodiments, the materials of the first connection body 22, the second connection body 23, and the valve core 30 include insulating materials.
[0079] In the embodiments of the present disclosure, when the intake air channel 21 is located on the upper electrode 104 (radio frequency driving electrode) and the deposited film type is a conductive film, since the intake pipe in the related art is a grounded metal pipe, a conductive film will gradually form on the inner wall of the insulating isolation layer provided between the upper electrode 104 and the intake pipe, thereby reducing the ground resistance of the radio frequency driving electrode or even directly conducting. Therefore, setting the materials of the first connection body 22, the second connection body 23, and the valve core 30 as insulating materials can isolate the radio frequency driving electrode from the intake pipe (metal ground) and play an insulating role. Here, the insulating materials include ceramic insulating materials.
[0080] As shown in Figure 2 Shown, in order to enable the valve core 30 to be located at the blocking position of the intake air channel 21. In some embodiments, the first connection body 22 further includes a first limiting structure 40 surrounding the first channel 221. When the valve core 30 is located at the blocking position, the valve core 30 cooperates with the first limiting structure 40 to block the first channel 221, so that the intake air channel 21 is isolated from the reaction chamber 100.
[0081] In the embodiments of the present disclosure, since the first channel 221 and the second channel 231 form the intake air channel 21, therefore, whether the first channel 221 or the second channel 231 is blocked, the intake air channel 21 can be blocked, so that the intake air channel 21 is isolated from the reaction chamber 100.
[0082] In the embodiment of the present disclosure, a first limiting structure 40 is provided on the first connection body 22. The first limiting structure 40 includes a surrounding of the first channel 221. In this way, when the valve core 30 is docked on one side of the first limiting structure 40, the valve core 30 can block the first channel 221, so that the intake air channel 21 is isolated from the reaction chamber 100.
[0083] Combined with Figure 2 As shown, in order to enable the valve core 30 to be located at the conducting position of the intake air channel 21. In some embodiments, the second connection body 23 further includes a second limiting structure 50 surrounding the second channel 231. When the valve core 30 is in the conducting position, the valve core 30 cooperates with the second limiting structure 50 to conduct the first channel 221 and the second channel 231, so that the intake air channel 21 is in communication with the reaction chamber 100.
[0084] In the embodiment of the present disclosure, only when the first channel 221 and the second channel 231 are conducted, can the intake air channel 21 be conducted, so that the intake air channel 21 is in communication with the reaction chamber 100.
[0085] In the embodiment of the present disclosure, a second limiting structure 50 is provided on the second connection body 23. The second limiting structure 50 surrounds the second channel 231. In this way, when the valve core 30 is docked on one side of the second limiting structure 50, the valve core 30 can avoid the blocking position, so that the intake air channel 21 is in communication with the reaction chamber 100.
[0086] Combined with Figure 3 and Figure 4 As shown, in some embodiments, an intake air channel 21 is provided at the top of the reaction chamber 100. The first limiting structure 40 includes a first limiting concave surface 41 surrounding the first channel 221. The valve core 30 includes a first conical baffle 31. The convex surface of the first conical baffle 31 cooperates with the first limiting concave surface 41 to block the first channel 221.
[0087] In the embodiment of the present disclosure, when an intake air channel 21 is provided at the top of the reaction chamber 100, at this time, the intake air channel 21 is a vertical channel, its air inlet 211 is located above, and the air outlet 212 is located below, that is, the process gas is transported from top to bottom.
[0088] In the embodiment of the present disclosure, the first limiting structure 40 includes a first limiting concave surface 41 surrounding the first channel 221. The valve core 30 includes a first conical flap 31. When the process gas flows back from one side of the reaction chamber 100 to the intake channel 21 side, the air pressure in the reaction chamber 100 is greater than the air pressure in the intake channel 21. At this time, the thrust force received by the first conical flap 31 is F1, F1 > G, and the thrust direction is from one side of the reaction chamber 100 to the intake channel 21 side, that is, the first conical flap 31 will be blown up from the side of the air outlet 212, so that the convex surface of the first conical flap 31 is closely attached to the first limiting concave surface 41, thereby forming a gas cutoff structure to block the first channel 221 and play a role in preventing gas backflow.
[0089] In the embodiment of the present disclosure, the first conical flap 31 is light in weight and thin in thickness.
[0090] In the embodiment of the present disclosure, the weight and thickness of the first conical flap 31 can be set according to the air pressure of the actual application scenario, and are not limited herein.
[0091] Combined Figure 3 and Figure 4 As shown in, in some embodiments, the second limiting structure 50 includes a first limiting platform 51 and a first overlapping platform 52. The first limiting platform 51 surrounds the second channel 231; the first overlapping platform 52 surrounds the side of the first limiting platform 51, and a first ventilation gap 53 is provided on the circumferential side of the first overlapping platform 52; wherein, the edge of the first conical flap 31 can overlap with the first overlapping platform 52, so that there is a distance between the concave surface of the first conical flap 31 and the first limiting platform 51, and the intake channel 21 is communicated with the reaction chamber 100 through the first ventilation gap 53.
[0092] In the embodiment of the present disclosure, the second limiting structure 50 includes a first limiting platform 51 surrounding the second channel 231 and a first overlapping platform 52 surrounding the side of the first limiting platform 51, wherein a first ventilation gap 53 is provided on the circumferential side of the first overlapping platform 52. In this way, when the process gas flows in from top to bottom, the air pressure in the reaction chamber 100 is less than the air pressure in the intake channel 21. At this time, the thrust force received by the first conical flap 31 is F2, F2 > G, and the thrust direction is from the intake channel 21 side to the reaction chamber 100 side, that is, the edge of the first conical flap 31 can fall onto the first overlapping platform 52 without blocking the first ventilation gap 53. At the same time, there is a distance between the concave surface of the first conical flap 31 and the first limiting platform 51. The process gas can flow into the reaction chamber 100 from the first channel 221, the first ventilation gap 53, and the second channel 231 in sequence.
[0093] In the embodiment of the present disclosure, the first limiting platform 51 may be a conical structure. In this way, when the first conical flap 31 falls, it is convenient for the edge of the first conical flap 31 to fall onto the first lapping platform 52. At the same time, the top surface of the first lapping platform 52 is a planar structure, and a first ventilation notch 53 is provided on its side surface.
[0094] Combined Figure 5 with Figure 6 As shown, in some embodiments, when an air inlet channel 21 is provided on the side of the reaction chamber 100, the first limiting structure 40 includes a second limiting concave surface 42 and a guiding surface 43 surrounding the first channel 221, and the valve element 30 includes a second conical flap 32, and the second conical flap 32 has a smooth portion; wherein, the smooth portion of the second conical flap 32 cooperates with the guiding surface 43, and the convex surface of the second conical flap 32 cooperates with the second limiting concave surface 42 to block the first channel 221.
[0095] In the embodiment of the present disclosure, when an air inlet channel 21 is provided on the side of the reaction chamber 100, at this time, the air inlet channel 21 is a horizontal channel, its air inlet 211 is located on the outside, and its air outlet 212 is located on the inside, that is, the process gas is transported from right to left or from left to right.
[0096] In the embodiment of the present disclosure, the first limiting structure 40 includes a second limiting concave surface 42 and a guiding surface 43 surrounding the first channel 221, and the valve element 30 includes a second conical flap 32. When the process gas flows back from one side of the reaction chamber 100 to the side of the air inlet channel 21, the air pressure in the reaction chamber 100 is greater than the air pressure in the air inlet channel 21. At this time, the thrust force received by the second conical flap 32 is F1, F1 > μ, and the thrust direction is from one side of the reaction chamber 100 to the side of the air inlet channel 21, that is, the gas blows from the side of the air outlet 212 to the second conical flap 32. The smooth portion of the second conical flap 32 will move along the guiding surface 43 of the first limiting structure 40, so that the convex surface of the second conical flap 32 is closely attached to the second limiting concave surface 42, thereby forming a gas cutoff structure to block the first channel 221 and playing a role in preventing gas backflow.
[0097] In the embodiment of the present disclosure, the guiding surface 43 is a smooth curved surface, and the smooth portion is also a smooth curved surface.
[0098] In the embodiment of the present disclosure, the second conical flap 32 is light in weight and thin in thickness.
[0099] In the embodiment of the present disclosure, the weight and thickness of the second conical flap 32 can be set according to the air pressure of the actual application scenario, and are not limited herein.
[0100] Combined Figure 5 with Figure 6As shown, in some embodiments, the second limiting structure 50 includes a second limiting platform 54 and a second overlapping platform 55. The second limiting platform 54 surrounds the second channel 231; the second overlapping platform 55 surrounds the side of the second limiting platform 54, and a second ventilation gap 56 is provided on the side of the second overlapping platform 55; wherein, the edge of the second conical baffle 32 can overlap with the second overlapping platform 55, so that there is a distance between the concave surface of the second conical baffle 32 and the second limiting platform 54, and the intake channel 21 is communicated with the reaction chamber 100 through the second ventilation gap 56.
[0101] In the embodiments of the present disclosure, the second limiting structure 50 includes a second limiting platform 54 surrounding the second channel 231 and a second overlapping platform 55 surrounding the side of the second limiting platform 54. Among them, a second ventilation gap 56 is provided on the side of the second overlapping platform 55. In this way, when the process gas flows from the outside to the inside, the air pressure in the reaction chamber 100 is less than the air pressure in the intake channel 21. At this time, the thrust force received by the second conical baffle 32 is F2, F2 > μ, and the thrust direction is from the side of the intake channel 21 to the side of the reaction chamber 100. The edge of the second conical baffle 32 can fall onto the second overlapping platform 55 and does not block the second ventilation gap 56. At the same time, there is a distance between the concave surface of the second conical baffle 32 and the second limiting platform 54. The process gas in the gas channel can flow into the reaction chamber 100 from the first channel 221, the second ventilation gap 56, and the second channel 231 in sequence.
[0102] In the embodiments of the present disclosure, the surface of the first overlapping platform 52 in contact with the second conical baffle 32 is a plane, and the first ventilation gap 53 is provided above the axis of the intake channel 21. Here, affected by the gravity factor, the smooth part of the second conical baffle 32 will always be in contact with the inner wall of the first channel 221, that is, below the axis of the intake channel 21. Setting the first ventilation gap 53 above the axis of the intake channel 21 facilitates the conduction of the intake channel 21.
[0103] Combined Figures 7 to 10 As shown, in some embodiments, when the intake channel 21 is provided at the bottom of the reaction chamber 100, the valve core 30 includes a spherical block 33 or a conical block 34; the first limiting structure 40 includes a third limiting concave surface 44 surrounding the first channel 221; wherein, the arc surface of the spherical block 33 cooperates with the third limiting concave surface 44; or, the convex surface of the conical block 34 cooperates with the third limiting concave surface 44 to block the first channel 221.
[0104] In the embodiments of the present disclosure, when the intake channel 21 is provided at the bottom of the reaction chamber 100, at this time, the intake channel 21 is a vertical channel, its intake port 211 is located below, and the outlet port 212 is located above, that is, the process gas is transported from bottom to top.
[0105] In an embodiment of the present disclosure, the first limiting structure 40 includes a third limiting concave surface 44 surrounding the first channel 221. The valve core 30 includes a spherical stopper 33 or a conical stopper 34. When the process gas flows back from one side of the reaction chamber 100 to the intake channel 21 side, the air pressure in the reaction chamber 100 is greater than the air pressure in the intake channel 21. At this time, the thrust force received by the first conical flap 31 is F1, and the thrust direction is from one side of the reaction chamber 100 to the intake channel 21 side. At the same time, combined with the action of gravity on the spherical stopper 33 or the conical stopper 34, the arc surface of the spherical stopper 33 can be closely attached to the third limiting concave surface 44, or the convex surface of the conical stopper 34 can be closely attached to the third limiting concave surface 44, thereby forming a gas cutoff structure to block the first channel 221 and play a role in preventing gas backflow.
[0106] In an embodiment of the present disclosure, the spherical stopper 33 or the conical stopper 34 has a certain weight, and its weight can be set according to the air pressure in the actual application scenario, which is not limited here.
[0107] Combined with Figures 7 to 10 As shown, in some embodiments, the second limiting structure 50 includes a third limiting platform 57. The third limiting platform 57 surrounds the second channel 231. Among them, a defined distance is set between the tabletop of the third limiting platform 57 and the valve core 30; or, a third ventilation gap 58 communicating the second channel 231 and the first channel 221 is provided on the third limiting platform 57 to conduct the intake channel 21 and the reaction chamber 100 through the defined distance or the third ventilation gap 58.
[0108] In an embodiment of the present disclosure, the second limiting structure 50 includes a third limiting platform 57 surrounding the second channel 231, and a defined distance is set between the tabletop of the third limiting platform 57 and the valve core 30. In this way, when the process gas flows in from bottom to top, that is, the air pressure in the reaction chamber 100 is less than the air pressure in the intake channel 21. At this time, the thrust force received by the first conical flap 31 is F1, F1 > G, and the thrust direction is from the intake channel 21 side to the reaction chamber 100 side, which can lift the spherical stopper 33 or the conical stopper 34. Here, since there is a certain distance between the spherical stopper 33 or the conical stopper 34 and the third limiting platform 57, that is, when the spherical stopper 33 or the conical stopper 34 does not contact the third limiting platform 57, the first channel 221 and the second channel 231 can be communicated.
[0109] In an embodiment of the present disclosure, the defined distance between the tabletop of the third limiting platform 57 and the valve core 30 can be selected according to the size, shape, etc. of the valve core 30. This is not limited here.
[0110] In an embodiment of the present disclosure, a third ventilation notch 58 communicating the second channel 231 and the first channel 221 may also be provided on the third limiting platform 57. In this way, even if the spherical stopper 33 or the conical stopper 34 is lifted to a relatively high distance and the opening at the top of the third limiting platform 57 (the air inlet of the first channel 221) is blocked, the first channel 221 and the second channel 231 can still be communicated through the third ventilation notch 58. Here, the third ventilation notch 58 is provided on the side of the third limiting platform 57.
[0111] In the above embodiment, regardless of whether the valve core 30 includes the first conical flap 31, the second conical flap 32, the spherical stopper 33 or the conical stopper 34, spaces for restricting the movement of the valve core 30 in a blocking form or a conducting form are provided in the first channel 221 and the second channel 231, thereby preventing the valve core 30 from flipping or shifting in the first channel 221 and the second channel 231.
[0112] An embodiment of the present disclosure further provides a thin film deposition apparatus, including a reaction chamber 100 and an air intake system for the thin film deposition apparatus as described in the foregoing embodiment.
[0113] In an embodiment of the present disclosure, the thin film deposition apparatus includes the above-mentioned air intake system for the thin film deposition apparatus. Referring to the above embodiment, it therefore has at least the beneficial effects brought by the technical solutions of the above embodiment, which will not be elaborated here one by one.
[0114] The above description and the drawings fully illustrate the embodiments of the present disclosure so that those skilled in the art can practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Unless explicitly required, individual components and functions are optional, and the order of operations may vary. Parts and features of some embodiments may be included in or substituted for parts and features of other embodiments. The embodiments of the present disclosure are not limited to the structures already described and shown in the drawings, and various modifications and changes can be made without departing from its scope. The scope of the present disclosure is limited only by the appended claims.
Claims
1. An intake system for a thin film deposition device, the thin film deposition device including a reaction chamber, characterized in that, The intake system includes: A main intake structure for inputting a first flow rate of process gas into the reaction chamber; A secondary intake structure for inputting a second flow rate of process gas into the reaction chamber. The secondary intake structure includes a plurality of intake channels, and the plurality of intake channels are disposed at one or more positions among the top, bottom, and side of the reaction chamber. A valve core capable of switching between a blocking position and a conducting position is respectively disposed in each intake channel; Wherein, the thrust and the direction of the thrust received by the valve core are determined according to the air pressure in the reaction chamber and the air pressure in the intake channel, so that the valve core is located at the conducting position through the thrust and the direction of the thrust received by the valve core, and the intake channel and the reaction chamber are conducted; or, the valve core is located at the blocking position, and the intake channel and the reaction chamber are isolated.
2. The intake system according to claim 1, characterized in that, Determining the thrust and the direction of the thrust received by the valve core according to the air pressure in the reaction chamber and the air pressure in the intake channel includes: When P1 > P2, the thrust received by the valve core is F1, and F1 > G, or, F1 > μ, and the direction of the thrust is from the side of the reaction chamber to the side of the intake channel; When P1 < P2, the thrust received by the valve core is F2, and F2 > G, or, F2 > μ, and the direction of the thrust is from the side of the intake channel to the side of the reaction chamber; When P1 = P2, the thrust received by the valve core is 0; Wherein, P1 is the air pressure on the reaction chamber side, P1 is the air pressure on the intake channel side, G is the gravity of the valve core in the plurality of intake channels disposed at the top or bottom of the reaction chamber, and μ is the friction between the valve core and the intake channel in the plurality of intake channels disposed at the side of the reaction chamber.
3. The intake system according to claim 1, wherein, The secondary intake structure further includes: A first connection body provided with a first channel; A second connection body provided with a second channel; Wherein, the first connection body and the second connection body are cooperatively connected, so that the first channel and the second channel form an intake channel.
4. The intake system according to claim 3, characterized in that, The first connection body further includes a first limiting structure surrounding the first channel. When the valve core is in the blocking position, the valve core cooperates with the first limiting structure to block the first channel, so that the intake channel is isolated from the reaction chamber.
5. The intake system according to claim 4, characterized in that, The second connection body further includes a second limiting structure surrounding the second channel. When the valve core is in the conducting position, the valve core cooperates with the second limiting structure to conduct the first channel and the second channel, so that the intake channel is conducted with the reaction chamber.
6. The intake system according to claim 5, characterized in that, An intake channel is disposed at the top of the reaction chamber. The first limiting structure includes a first limiting concave surface surrounding the first channel, and the valve core includes a first conical blocking piece; wherein, the convex surface of the first conical blocking piece cooperates with the first limiting concave surface to block the first channel.
7. The intake system according to claim 6, characterized in that, The second limiting structure includes: A first limiting platform surrounding the second channel; A first lapping platform surrounding the side of the first limiting platform, and a first ventilation gap is disposed on the circumferential side of the first lapping platform; Wherein, the edge of the first conical blocking piece can lap with the first lapping platform, so that there is a distance between the concave surface of the first conical blocking piece and the first limiting platform, and the intake channel is conducted with the reaction chamber through the first ventilation gap.
8. The intake system according to any one of claims 5 to 7, characterized in that An air inlet channel is provided on the side of the reaction chamber. The first limiting structure includes a second limiting concave surface and a guiding surface surrounding the first channel. The valve core includes a second conical baffle, and the second conical baffle has a smooth portion. Wherein, the smooth portion of the second conical baffle cooperates with the guiding surface, and the convex surface of the second conical baffle cooperates with the second limiting concave surface to block the first channel.
9. The intake system according to claim 8, characterized in that, The second limiting structure includes: A second limiting platform surrounding the second channel; A second overlapping platform surrounding the side of the second limiting platform, and a second ventilation gap is provided on the side of the second overlapping platform; Wherein, the edge of the second conical baffle can overlap with the second overlapping platform, so that there is a distance between the concave surface of the second conical baffle and the second limiting platform, and the air inlet channel is communicated with the reaction chamber through the second ventilation gap.
10. The intake system according to any one of claims 5 to 7, characterized in that, An air inlet channel is provided at the bottom of the reaction chamber. The valve core includes a spherical baffle or a conical baffle. The first limiting structure includes a third limiting concave surface surrounding the first channel. Wherein, the convex surface of the conical baffle cooperates with the third limiting concave surface; or, the arc surface of the spherical baffle cooperates with the third limiting concave surface to block the first channel.
11. The intake system according to claim 10, characterized in that, The second limiting structure includes: A third limiting platform surrounding the second channel. Wherein, a limiting distance is provided between the table surface of the third limiting platform and the valve core; or, a third ventilation gap communicating the second channel and the first channel is provided on the third limiting platform to communicate the air inlet channel with the reaction chamber through the limiting distance or the third ventilation gap.
12. The intake system according to any one of claims 3 to 7, characterized in that, The materials of the first connection body, the second connection body and the valve core include insulating materials.
13. The intake system according to any one of claims 3 to 7, characterized in that, The auxiliary air inlet structure further includes: A connection structure provided on the first connection body and surrounding the first channel; A connection and cooperation structure provided on the second connection body and surrounding the second channel. Wherein, the connection structure is connected to the connection and cooperation structure so that the first channel and the second channel form an air inlet channel.
14. The intake system according to claim 13, characterized in that, The connection position of the connection structure and the connection and cooperation structure is subjected to a sealing treatment.
15. A thin film deposition device, characterized in that, Including: A reaction chamber; An air inlet system for a thin film deposition device according to any one of claims 1 to 14.