Gas guide piece and reaction furnace

Abstract

The invention discloses a gas guide part and a reaction furnace, and aims to solve the problem of low yield of a semiconductor material formed on a semiconductor substrate, the gas guide part is used for conveying feed gas to the reaction furnace, the gas guide part comprises a transition part, the transition part is provided with a gas guide channel, and the gas guide channel is communicated with a reaction channel in the reaction furnace. And feed gas is conveyed to the reaction channel through the gas guide channel. The side wall of the air guide channel is covered with a functional layer, and the material of the functional layer is different from that of the semiconductor material. As the functional layer covering the side wall of the gas guide channel is different from the semiconductor material in material, when the reaction furnace works, the formed semiconductor material does not form a crystal layer on the functional layer, so that attachments can be prevented from being formed on the side wall of the gas guide channel, and the attachments are further prevented from entering the reaction channel along with raw material gas flow; therefore, the attachment is prevented from falling on the semiconductor substrate, and the yield of the semiconductor material is improved.

Description

Technical Field

[0001] The embodiments of the present application relate to the technical field of semiconductor manufacturing, and particularly to a gas guiding member and a reaction furnace. Background Art

[0002] Silicon carbide (SiC) has been gradually applied in transistors due to its wide bandgap, high breakdown field strength, and high thermal conductivity. In related technologies, silicon carbide is generally prepared by a reaction furnace. The reaction furnace includes a gas guiding member and a reaction member. During preparation, a semiconductor substrate is placed in the reaction member, and a raw material gas is introduced into the reaction member through the gas guiding member. The raw material gas reacts in the reaction cavity to form silicon carbide, and the formed silicon carbide grows on the semiconductor substrate to complete the production of silicon carbide. However, during the preparation process, silicon carbide attachments are likely to adhere to the gas guiding member, and the attachments are likely to fall off into the reaction member and onto the semiconductor substrate, affecting the yield of the silicon carbide formed on the semiconductor substrate. Summary of the Invention

[0003] The embodiments of the present application provide a gas guiding member and a reaction furnace, which can improve the yield of the semiconductor material formed on the semiconductor substrate.

[0004] In a first aspect, the embodiments of the present application provide a gas guiding member. The gas guiding member is used to convey a raw material gas to a reaction furnace. The gas guiding member may include a transition member. A gas guiding channel is provided on the transition member, and the gas guiding channel is communicated with a reaction channel in the reaction furnace to convey the raw material gas to the reaction channel through the gas guiding channel. A functional layer is covered on the side wall of the gas guiding channel, and the material of the functional layer is different from that of the semiconductor material.

[0005] Since the material of the functional layer covered on the side wall of the gas guiding channel is different from that of the semiconductor material, when the reaction furnace operates, the formed semiconductor material will not form a crystalline layer on the functional layer, which can prevent attachments from forming on the side wall of the gas guiding channel, and further prevent the attachments from entering the reaction channel along with the raw material gas flow, so as to avoid the attachments from falling on the semiconductor substrate and improve the yield of the semiconductor material.

[0006] In some embodiments that may include the above embodiments, the functional layer completely covers the side wall of the gas guiding channel. That is to say, the functional layer covers the entire side wall of the gas guiding channel, which can prevent attachments from being generated at any position of the gas guiding channel to further ensure the yield of the semiconductor material.

[0007] In some embodiments that may include the above embodiments, the functional layer also covers other surfaces of the transition member except the side wall of the gas guiding channel. That is to say, the functional layer covers all the exposed surfaces of the transition member. With such a setting, when forming the functional layer, there is no need to control the position of the functional layer, which can reduce the manufacturing difficulty of the functional layer. For example, the functional layer can be formed on all the surfaces of the transition member by chemical vapor deposition.

[0008] In some embodiments that may include the above-described embodiments, the melting point of the functional layer is higher than the generation temperature of the semiconductor material. With such a setting, it can be ensured that the functional layer does not melt during the operation of the reaction furnace, thereby avoiding the shedding of the functional layer. In addition, the functional layer needs to have relatively stable chemical properties to avoid chemical reactions of the functional layer during the operation of the reaction furnace.

[0009] In some embodiments that may include the above-described embodiments, the material of the functional layer includes at least one of tantalum carbide and boron nitride. With such a setting, tantalum carbide and boron nitride have relatively high melting points, and both tantalum carbide and boron nitride are binary compounds with stable chemical properties, which can avoid the shedding of the functional layer or deterioration due to chemical reactions during the operation of the reaction furnace.

[0010] In some embodiments that may include the above-described embodiments, the transition member includes a first transition member and a second transition member, the air guide channel includes a first air guide channel provided on the first transition member and a second air guide channel provided on the second transition member, the second air guide channel is used to connect the first air guide channel and the reaction channel, and the functional layer covers the side wall of the second air guide channel. With such a setting, the functional layer is only provided on the side wall of the second air guide channel, which can avoid the formation of attachments on the air guide channel while reducing the area of the functional layer.

[0011] In some embodiments that may include the above-described embodiments, the functional layer also covers the side wall of the first air guide channel. To avoid the generation of attachments at any position of the air guide channel, so as to further ensure the yield of the semiconductor material. In the implementation manner where the functional layer also covers other surfaces of the transition member except the side walls of the air guide channel, the functional layer also covers other surfaces of the first transition member except the side wall of the first air guide channel, and at the same time, the functional layer also covers other surfaces of the second transition member except the side wall of the second air guide channel, so as to facilitate the formation of the functional layer on the first transition member and the second transition member and reduce the manufacturing difficulty of the first transition member and the second transition member.

[0012] In some embodiments that may include the above-described embodiments, the second transition member is provided with a first insertion channel communicating with the second air guide channel, the first transition member includes a first body portion and a first insertion portion, the first air guide channel penetrates through the first body portion and the first insertion portion, and the first insertion portion is inserted into the first insertion channel. With such a setting, the first transition member and the second transition member are connected through the cooperation of the first insertion portion and the first insertion channel, the connection is relatively tight, and after insertion, the positions of the first transition member and the second transition member are fixed, improving the assembly accuracy of the first transition member and the second transition member.

[0013] In some embodiments that may include the above embodiments, a second insertion channel communicating with the first air guiding channel is provided on the first transition member. The second transition member includes a second body portion and a second insertion portion. The second air guiding channel penetrates through the second body portion and the second insertion portion, and the second insertion portion is inserted into the second insertion channel. With this arrangement, it can also ensure that the first transition member and the second transition member are tightly connected, and at the same time improve the assembly accuracy of the first transition member and the second transition member.

[0014] In a second aspect, an embodiment of the present application further provides a reaction furnace for preparing semiconductor materials, including: a reaction member and the air guiding member as described above. A reaction channel is provided on the reaction member, and the reaction channel is used to accommodate a semiconductor substrate; the reaction channel is configured to react a source gas to form a semiconductor material on the semiconductor substrate; the air guiding channel communicates with the reaction channel to supply the source gas to the reaction channel.

[0015] The reaction furnace provided by the embodiment of the present application includes the air guiding member in any of the above embodiments. Therefore, the two can solve the same technical problems and achieve the same technical effects.

[0016] In some embodiments that may include the above embodiments, a functional layer is also covered on the side wall of the reaction channel. With this arrangement, it can prevent the formation of attachments on the side wall of the reaction channel and avoid the influence of the yield of the semiconductor material caused by the detachment of the attachments.

[0017] In some embodiments that may include the above embodiments, the reaction member includes a first semi-moon and a second semi-moon. The first semi-moon and the second semi-moon are arranged at intervals, and the first semi-moon and the second semi-moon enclose the reaction channel. The functional layer is provided on the inner walls of the first semi-moon and the second semi-moon; a receiving groove is provided on the inner wall of the second semi-moon, and the receiving groove is used to accommodate the semiconductor substrate. With this arrangement, the connection between the semiconductor substrate and the reaction member is realized through the receiving groove, which facilitates the fixation of the semiconductor substrate.

[0018] In some embodiments that may include the above embodiments, the reaction furnace further includes a tray located in the reaction channel, and the tray is used to carry the semiconductor substrate. By using the tray to carry the semiconductor substrate, it can be avoided that the semiconductor substrate is broken during the process of putting the semiconductor substrate into the reaction channel or taking the semiconductor substrate out of the reaction channel.

[0019] In some embodiments that may include the above embodiments, a limiting flange is provided on the tray, and the limiting flange and the tray enclose a limiting groove, and the limiting groove is used to accommodate the semiconductor substrate. With this arrangement, the limiting flange can limit the position of the semiconductor substrate on the tray to prevent the semiconductor substrate from moving on the tray.

[0020] In some embodiments that may include the above embodiments, there are multiple limiting flanges, and each limiting flange and the tray enclose a limiting groove. With this arrangement, semiconductor materials can be grown simultaneously on multiple semiconductor substrates, that is, the reaction furnace can grow semiconductor materials on multiple semiconductor substrates simultaneously, so as to improve the production efficiency of the reaction furnace.

[0021] It can be understood that in the implementation where there are multiple limiting flanges, the sizes of the limiting grooves formed between each limiting flange and the tray can be the same; that is to say, the reaction furnace can simultaneously fabricate multiple semiconductor materials of the same size.

[0022] In some embodiments that may include the above embodiments, the reaction furnace further includes a heat insulation cover, and the heat insulation cover covers the transition member. With this arrangement, the heat insulation cover can prevent the heat of the reaction member from being transferred to the transition member, thereby reducing the temperature of the transition member, so as to further avoid the formation of attachments on the side walls of the gas guiding channel.

[0023] It can be understood that in the implementation where the transition member includes a first transition member and a second transition member, the heat insulation cover can cover the second transition member. Since the second transition member is close to the reaction member, covering the second transition member with the heat insulation cover can prevent heat from being transferred to the first transition member, so as to reduce the temperature of the first transition member.

[0024] In some embodiments that may include the above embodiments, the material of the heat insulation cover is a material with good heat insulation performance. Exemplarily, the heat insulation cover may include a heat insulation felt, and the heat insulation felt may be woven from carbon fibers with a small length (chopped carbon fibers). A pyrolytic carbon coating is provided on the outer surface of the heat insulation felt. The pyrolytic carbon can improve the strength of the heat insulation felt and also achieve the sealing of the heat insulation felt. Description of the Drawings

[0025] Figure 1 Schematic structural diagram of the reaction furnace provided by the embodiment of the present application, which is a vertical furnace;

[0026] Figure 2 Schematic structure of the reaction furnace provided by the embodiment of the present application Figure 1 ;

[0027] Figure 3 Schematic structural diagram of the tray in the reaction furnace provided by the embodiment of the present application;

[0028] Figure 4 Schematic structure of the reaction furnace provided by the embodiment of the present application Figure 2 ;

[0029] Figure 5 Schematic structural diagram of the reaction furnace in the related art;

[0030] Figure 6 Schematic structure of the reaction furnace provided by the embodiment of the present applicationFigure 3 ;

[0031] Figure 7 Structural schematic of the reactor provided by the embodiment of the present application Figure 4 ;

[0032] Figure 8 Structural schematic of the reactor provided by the embodiment of the present application Figure 5 ;

[0033] Figure 9 Structural schematic of the second transition member in the gas guiding member provided by the embodiment of the present application;

[0034] Figure 10 Structural schematic of the first transition member in the gas guiding member provided by the embodiment of the present application;

[0035] Figure 11 Structural schematic of the gas guiding member in the reactor provided by the embodiment of the present application;

[0036] Figure 12 Explosion diagram of the gas guiding member in the reactor provided by the embodiment of the present application;

[0037] Figure 13 Structural schematic of the reactor provided by the embodiment of the present application Figure 6 。

[0038] Explanation of reference numerals: 10: Reactor; 20: Gas guiding member; 30: Reaction member; 40: Heat insulation cover; 100: Transition member; 101: First transition member; 102: Second transition member; 103: First insertion channel; 104: First body part; 105: First insertion part; 106: Second body part; 107: Second insertion part; 108: Second insertion channel; 110: Gas guiding channel; 111: First gas guiding channel; 112: Second gas guiding channel; 120: Functional layer; 201: Upper half moon; 202: Lower half moon; 203: Accommodation groove; 210: Reaction channel; 220: Semiconductor substrate; 230: Tray; 240: Limiting flange; 250: Limiting groove; 300: Attachment. Detailed implementation manners

[0039] Next, the technical solutions in the embodiments of the present application will be described with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments.

[0040] Hereinafter, terms such as "first" and "second" are only used for descriptive purposes, and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features.

[0041] In addition, in the embodiments of the present application, orientation terms such as "upper", "lower", "left", "right", "horizontal", and "vertical" are defined relative to the orientation in which the components in the drawings are schematically placed. It should be understood that these directional terms are relative concepts, which are used for relative description and clarification, and they can change correspondingly according to the change of the orientation in which the components in the drawings are placed.

[0042] In the embodiments of the present application, unless otherwise clearly specified and limited, the term "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, an electrical connection, a detachable connection, or integrated; it can be directly connected or indirectly connected through an intermediate medium.

[0043] In general, electronic devices such as controllers and memories in electronic devices include transistors. Structures such as channels and substrates in transistors are generally made of semiconductor materials. Therefore, the performance of semiconductor materials will directly affect the performance of electronic devices and electronic equipment. As a semiconductor layer material, silicon carbide (SiC) has been gradually applied in transistors due to its wide bandgap, high breakdown field strength, and high thermal conductivity.

[0044] Please refer to Figure 1 , embodiments of the present application provide a reaction furnace 10. The reaction furnace 10 can fabricate semiconductor materials by means of Chemical Vapor Deposition (CVD for short). In the embodiments of the present application, the semiconductor material is taken as an example including silicon carbide for introduction, however, the embodiments of the present application are not limited thereto. The reaction furnace 10 includes a gas guiding member 20 and a reaction member 30. The gas guiding member 20 is used to convey raw material gas to the reaction member 30, and the reaction member 30 is used to cause the raw material gas to undergo physical and / or chemical reactions to generate semiconductor materials.

[0045] Exemplarily, the raw material gas can include trichlorosilane (TCS for short), ethylene, and hydrogen. Among them, trichlorosilane can be used as a silicon source to provide silicon elements, ethylene can be used as a carbon source to provide carbon elements, and hydrogen can be used as a carrier gas.

[0046] In the embodiments of the present application, a reaction channel 210 can be provided on the reaction member 30. The gas guiding member 20 can convey the raw material gas into the reaction channel 210 so that the raw material gas reacts in the reaction channel 210 to generate semiconductor materials. Exemplarily, the reaction furnace 10 can further include a heating coil. The heating coil can be arranged near the reaction member 30. When the heating coil is powered on, it can generate eddy currents and heat in the reaction member 30 to heat the raw material gas in the reaction channel 210 and promote the reaction of the raw material gas in the reaction channel 210.

[0047] In the above implementation, the material of the reaction member 30 is a material that can generate eddy currents under the action of the magnetic field generated by the heating coil. Exemplarily, the material of the reaction member 30 may include graphite, and graphite has a relatively high melting point and can maintain stable performance at high temperatures. It can be understood that by controlling the current and / or voltage of the heating coil, the temperature of the reaction member 30 can be controlled, and the temperature control is relatively accurate.

[0048] Continuing to refer to Figure 1 , in some embodiments, a semiconductor substrate 220 may be accommodated in the reaction channel 210. The material of the semiconductor substrate 220 may be the same as that of the semiconductor material. When the raw material gas reacts to generate the semiconductor material, the semiconductor material may grow on the semiconductor substrate 220 (epitaxial growth), and the semiconductor substrate 220 may carry the generated semiconductor material. After the reaction is completed, the generated semiconductor material can be taken out of the reaction channel 210 through the semiconductor substrate 220.

[0049] In the above implementation, the material of the semiconductor substrate 220 may include silicon carbide, and the silicon carbide constituting the semiconductor substrate 220 is a single crystal; with such a setting, the semiconductor material grown on the semiconductor substrate 220 can also be a single crystal of silicon carbide. It can be understood that by reasonably setting the crystal phase of the semiconductor substrate 220, a semiconductor material with the corresponding crystal phase can be obtained.

[0050] Continuing to refer to Figure 1 , in the embodiment of the present application, the reaction member 30 may include a first semi - moon 201 and a second semi - moon 202. The first semi - moon 201 and the second semi - moon 202 are arranged at intervals, and the first semi - moon 201 and the second semi - moon 202 enclose the reaction channel 210. That is to say, a reaction channel 210 is formed between the first semi - moon 201 and the second semi - moon 202. The heating coil can generate eddy currents in both the first semi - moon 201 and the second semi - moon 202, so that the first semi - moon 201 and the second semi - moon 202 can simultaneously heat the raw material gas in the reaction channel 210 to ensure uniform temperature in the reaction channel 210.

[0051] In the embodiments of the present application, the shapes of the first semi - moon 201 and the second semi - moon 202 are not limited. Exemplarily, both the first semi - moon 201 and the second semi - moon 202 can be in the shape of plates. Correspondingly, the first semi - moon 201 and the second semi - moon 202 can be arranged in parallel and at intervals, so as to form a reaction channel 210 between the first semi - moon 201 and the second semi - moon 202. At this time, a first graphite plate and a second graphite plate can be relatively arranged between the first semi - moon 201 and the second semi - moon 202, and the first semi - moon 201, the second semi - moon 202, the first graphite plate and the second graphite plate enclose the reaction channel 210. Or, the first semi - moon 201 and the second semi - moon 202 can also be in the shape of cylinders or prisms. The first semi - moon 201 and the second semi - moon 202 are arranged in parallel and at intervals, which can also form a reaction channel 210 between the first semi - moon 201 and the second semi - moon 202.

[0052] Continue to refer to Figure 1 , in some implementation manners, the reaction furnace 10 can be a vertical furnace. Correspondingly, the central axis of the reaction channel 210 can be substantially perpendicular to the horizontal plane. That is to say, the flow path of the raw material gas in the reaction channel 210 is substantially perpendicular to the horizontal plane. Exemplarily, the gas guiding member 20 can be located at the top or bottom of the reaction member 30, and the embodiments of the present application do not limit this. The semiconductor substrate 220 can be arranged in the reaction channel 210, and the semiconductor substrate 220 can be substantially perpendicular to the central axis of the reaction channel 210, so that the generated semiconductor material can grow on the semiconductor substrate 220.

[0053] Please refer to Figure 2 , in other implementation manners, the reaction furnace 10 can also be a horizontal furnace. Correspondingly, the central axis of the reaction channel 210 can be substantially parallel to the horizontal plane, that is, the flow path of the raw material gas in the reaction channel 210 is substantially parallel to the horizontal plane. Exemplarily, the semiconductor substrate 220 can be arranged on the first semi - moon 201 or the second semi - moon 202. During the flow of the generated semiconductor material in the reaction channel 210, the semiconductor material can grow on the semiconductor substrate 220.

[0054] In the above - mentioned implementation manners, the second semi - moon 202 can be located below the first semi - moon 201. Correspondingly, the semiconductor substrate 220 can be arranged on the second semi - moon 202. Under the action of gravity, the generated semiconductor material will move downward while flowing in the reaction channel 210, which is convenient for growing the semiconductor material on the semiconductor substrate 220 and can also improve the generation speed of the semiconductor material.

[0055] Continue to refer to Figure 2, in some embodiments, a receiving groove 203 is provided on the inner wall of the second semi - moon 202. This inner wall is the surface of the second semi - moon 202 that encloses the reaction channel 210, and the semiconductor substrate 220 can be disposed in the receiving groove 203. This arrangement facilitates the fixation of the semiconductor substrate 220. It can be understood that the top surface of the semiconductor substrate 220 can be flush with the inner wall of the second semi - moon 202, that is, the top surface of the semiconductor substrate 220 can be coplanar with the inner wall of the second semi - moon 202; of course, the top surface of the semiconductor substrate 220 can also protrude from the inner wall of the second semi - moon 202, and the embodiments of the present application do not limit this.

[0056] In the embodiments of the present application, the reaction furnace 10 may further include a tray 230. The tray 230 is located in the reaction channel 210, and the tray 230 is used to carry the semiconductor substrate 220. By using the tray 230 to carry the semiconductor substrate 220, it is possible to avoid the semiconductor substrate 220 from cracking during the process of placing the semiconductor substrate 220 into the reaction channel 210 or taking the semiconductor substrate 220 out of the reaction channel 210. Exemplarily, the tray 230 may be in a plate shape, and the projection of the tray 230 in the plane parallel to the semiconductor substrate 220 may be in a regular shape such as a circle or a rectangle. Of course, this projection may also be in other irregular shapes. The material of the tray 230 may include graphite, sapphire, etc.

[0057] It can be understood that in the implementation where the semiconductor substrate 220 is disposed in the receiving groove 203 on the second semi - moon 202, the tray 230 may also be disposed in the receiving groove 203 to carry the semiconductor substrate 220 in the receiving groove 203.

[0058] Continuing to refer to Figure 2 , in some embodiments, a limiting flange 240 is provided on the tray 230. The limiting flange 240 and the tray 230 enclose a limiting groove 250, and the semiconductor substrate 220 is received in the limiting groove 250. This arrangement enables the limiting flange 240 to limit the position of the semiconductor substrate 220 on the tray 230 to prevent the semiconductor substrate 220 from moving on the tray 230. Exemplarily, the projection of the limiting groove 250 on the tray 230 may completely coincide with the projection of the semiconductor substrate 220 on the tray 230 to ensure that the limiting flange 240 contacts the semiconductor substrate 220 and avoid the semiconductor substrate 220 from moving in the limiting groove 250.

[0059] In the above implementation, the limiting flange 240 and the tray 230 may be an integral structure to reduce the manufacturing and assembly difficulty of the reaction furnace 10. Of course, the limiting flange 240 may also be connected to the tray 230 by means of bolt connection or snap connection, etc., and the embodiments of the present application do not limit this.

[0060] It can be understood that by reasonably setting the projected size of the limiting groove 250 on the tray 230, the tray 230 can carry semiconductor substrates 220 of different sizes, enabling the reaction furnace 10 to fabricate semiconductor materials of different sizes. For example, the projections of the semiconductor substrate 220 and the limiting groove 250 on the tray 230 can both be circular. Correspondingly, the diameter of this projection can be 4 inches, 6 inches, 8 inches, 12 inches, etc., so that the reaction furnace 10 can fabricate semiconductor materials corresponding to the size of this projection.

[0061] Please refer to Figure 3 , in some embodiments, there can be multiple limiting flanges 240. The multiple limiting flanges 240 are arranged at intervals on the tray 230. Each limiting flange 240 and the tray 230 enclose a limiting groove 250. The limiting grooves 250 are arranged at intervals along a direction parallel to the tray 230. One semiconductor substrate 220 can be placed in each limiting groove 250; thus, semiconductor materials can be grown simultaneously on multiple semiconductor substrates 220, that is, the reaction furnace 10 can grow semiconductor materials on multiple semiconductor substrates 220 simultaneously to improve the production efficiency of the reaction furnace 10.

[0062] It can be understood that in the implementation where there are multiple limiting flanges 240, the sizes of the limiting grooves 250 formed between each limiting flange 240 and the tray 230 can be the same; that is to say, the reaction furnace 10 can fabricate multiple semiconductor materials of the same size simultaneously.

[0063] Please refer to Figure 4 , in the embodiments of the present application, the gas guiding member 20 is used to convey the source gas to the reaction furnace 10. The gas guiding member 20 can include a transition member 100. A gas guiding channel 110 is provided on the transition member 100. The gas guiding channel 110 communicates with the reaction channel 210 to convey the source gas to the reaction channel 210 through the gas guiding channel 110. A functional layer 120 is covered on the side wall of the gas guiding channel 110, and the material of the functional layer 120 is different from that of the semiconductor material.

[0064] Exemplarily, the transition member 100 can be in regular shapes such as a cylindrical shape or a quadrangular prism shape. Of course, the transition member 100 can also be in other irregular shapes. The embodiments of the present application do not limit the shape of the transition member 100; the cross-section of the gas guiding channel 110 can be in regular shapes such as a circular shape or a rectangular shape. Of course, the cross-section of the gas guiding channel 110 can also be in other irregular shapes. The embodiments of the present application do not limit the cross-sectional shape of the gas guiding channel 110. The material of the transition member 100 can include graphite, sapphire, etc. The embodiments of the present application do not limit this.

[0065] In the above implementation, the center line of the gas guiding channel 110 can be collinear with the center line of the reaction channel 210 so that the flow direction of the raw material gas in the gas guiding channel 110 and the reaction channel 210 is the same; of course, there can also be a certain included angle between the center line of the gas guiding channel 110 and the center line of the reaction channel 210, and the embodiments of the present application do not limit this.

[0066] It can be understood that the melting point of the functional layer 120 is higher than the generation temperature of the semiconductor material. With such a setting, it can be ensured that the functional layer 120 will not melt when the reaction furnace 10 is working, thereby avoiding the shedding of the functional layer 120. In addition, the functional layer 120 needs to have relatively stable chemical properties to avoid chemical reactions occurring in the functional layer 120 when the reaction furnace 10 is working.

[0067] Exemplarily, the material of the functional layer 120 may include at least one of tantalum carbide (TaC) and boron nitride (BN). With such a setting, tantalum carbide and boron nitride have relatively high melting points, and both tantalum carbide and boron nitride are binary compounds with stable chemical properties, which can avoid the shedding of the functional layer 120 or deterioration due to chemical reactions when the reaction furnace 10 is working.

[0068] Through the above setting, when the reaction furnace 10 is working, the formed semiconductor material will not form a crystal layer on the functional layer 120, which can avoid the formation of attachments on the side wall of the gas guiding channel 110, and further avoid the attachments from entering the reaction channel 210 along with the raw material gas flow, so as to prevent the attachments from falling on the semiconductor substrate 220, improving the yield of the semiconductor material.

[0069] Figure 5 is a schematic structural diagram of a reaction furnace in the related art, such as Figure 5As shown, in the related art, the gas guiding channel 110 on the transition piece 100 communicates with the reaction channel 210 on the reaction piece 30. During operation, the raw material gas is transported through the gas guiding channel 110 to the reaction channel 210, and the raw material gas reacts in the reaction channel 210 to generate a semiconductor material. Since the transition piece 100 is relatively close to the reaction piece 30, its temperature is relatively high, causing some of the raw material gas to react in the gas guiding channel 110, and the generated semiconductor material (attachment 300) adheres to the side wall of the gas guiding channel 110. As the attachment 300 accumulates, it is likely to cause the attachment 300 to fall off. The fallen attachment 300 enters the reaction channel 210 with the raw material gas and then falls on the semiconductor substrate 220, affecting the yield of the semiconductor material formed on the semiconductor substrate 220. In addition, in order to prevent the attachment 300 in the gas guiding channel 110 from entering the reaction channel 210, generally, the side wall of the gas guiding channel 110 is cleaned (such as ingot grinding) within a certain period of operation to remove the attachment 300. Since the air inlet of the gas guiding channel 110 is generally small (with a width of several centimeters) and the attachment 300 is relatively hard, it is difficult to clean the attachment 300. At the same time, the cleaning work also causes the reaction furnace 10 to stop production, resulting in low production efficiency. After cleaning a certain number of times, the transition piece 100 is easily damaged and needs to be replaced, resulting in high production costs. Frequent grinding of the transition piece 100 will cause fluctuations in the process conditions for generating the semiconductor material, affecting the production of the semiconductor material. In addition, the generated semiconductor material is also likely to adhere to the side wall of the reaction channel 210 to form an attachment 300, and the falling off of the attachment 300 is also likely to affect the yield of the semiconductor material.

[0070] In response to this, for the reaction furnace 10 in the embodiments of the present application, please refer to Figure 4 , a functional layer 120 is covered on the side wall of the gas guiding channel 110, and the material of the functional layer 120 is different from that of the semiconductor material. The semiconductor material will not form a crystal layer on the functional layer 120, which can prevent the formation of attachments 300 on the side wall of the gas guiding channel 110. Furthermore, it can prevent the attachments 300 on the gas guiding channel 110 from entering the reaction channel 210 and falling on the semiconductor substrate 220, improving the yield of the semiconductor material. In addition, since no attachments 300 are formed on the side wall of the gas guiding channel 110, there is no need to clean the gas guiding channel 110 and replace the transition piece 100, improving the production efficiency of the reaction furnace 10 and at the same time reducing the production cost of the reaction furnace 10. In addition, the process conditions for generating the semiconductor material are stable, which is beneficial to the production of the semiconductor material.

[0071] In some embodiments, the functional layer 120 may cover the entire side wall of the gas guiding channel 110, that is, the functional layer 120 completely covers the side wall of the gas guiding channel 110. With such a setting, it is possible to prevent the generation of attachments at any position of the gas guiding channel 110, further ensuring the yield of the semiconductor material.

[0072] It is understandable that the functional layer 120 can be formed on the transition piece 100 by coating or chemical vapor deposition. The formation of the functional layer 120 is relatively simple, which is convenient for the manufacture of the transition piece 100 and the reaction furnace 10.

[0073] In the embodiment of the present application, the functional layer 120 also covers other surfaces of the transition piece 100 except the side walls of the gas guiding channels 110, that is to say, the functional layer 120 covers all the exposed surfaces of the transition piece 100. With such a setting, when forming the functional layer 120, there is no need to control the position of the functional layer 120, which can reduce the manufacturing difficulty of the functional layer 120; for example, the functional layer 120 can be formed on all the surfaces of the transition piece 100 by chemical vapor deposition.

[0074] In the implementation manner where the material of the transition piece 100 includes graphite, when the reaction furnace 10 is working, graphite is prone to precipitate graphite powder under the action of high temperature, and the graphite powder enters the gas guiding channels 110, which is likely to affect the yield of the generated semiconductor material. The functional layer 120 covering the gas guiding channels 110 can prevent the precipitated graphite powder from entering the gas guiding channels 110, so as to further ensure the yield of the generated semiconductor material.

[0075] Please refer to Figure 6 , in other embodiments, the functional layer 120 can cover part of the side walls of the gas guiding channels 110. For example, the functional layer 120 only covers the side walls of the gas guiding channels 110 close to the reaction piece 30. Since the temperature of the gas guiding channels 110 here is relatively high and it is easy to form attachments, while avoiding the formation of attachments on the gas guiding channels 110, the area of the functional layer 120 can be reduced, thereby reducing the cost of the reaction furnace 10.

[0076] Please refer to Figure 7 , in the above implementation manner, the transition piece 100 can include a first transition piece 101 and a second transition piece 102. The gas guiding channels 110 include a first gas guiding channel 111 provided on the first transition piece 101 and a second gas guiding channel 112 provided on the second transition piece 102. The second gas guiding channel 112 is used to connect the first gas guiding channel 111 and the reaction channel 210. That is to say, the raw material gas flows through the first gas guiding channel 111 and the second gas guiding channel 112 in sequence and then enters the reaction channel 210. Correspondingly, the functional layer 120 covers the side walls of the second gas guiding channel 112. The second transition piece 102 is close to the reaction piece 30, and the temperature of the second transition piece 102 is relatively high, and it is easy to form attachments on the second gas guiding channel 112. With such a setting, the functional layer 120 is only provided on the side walls of the second gas guiding channel 112, which can avoid the formation of attachments on the gas guiding channels 110 while reducing the area of the functional layer 120.

[0077] Please refer to Figure 8 It can be understood that in the implementation where the functional layer 120 can cover the side walls of the entire air guiding channel 110, the functional layer 120 also covers the side walls of the first air guiding channel 111 to prevent the generation of attachments at any position of the air guiding channel 110, thereby further ensuring the yield of semiconductor materials. In the implementation where the functional layer 120 also covers other surfaces of the transition member 100 except for the side walls of the air guiding channel 110, the functional layer 120 also covers other surfaces of the first transition member 101 except for the side walls of the first air guiding channel 111. At the same time, the functional layer 120 also covers other surfaces of the second transition member 102 except for the side walls of the second air guiding channel 112, so as to form the functional layer 120 on the first transition member 101 and the second transition member 102, reducing the manufacturing difficulty of the first transition member 101 and the second transition member 102.

[0078] In some implementations, such as Figure 9 shown, a first insertion channel 103 communicating with the second air guiding channel 112 is provided on the second transition member 102. As Figure 10 shown, the first transition member 101 includes a first body portion 104 and a first insertion portion 105, and the first air guiding channel 111 penetrates through the first body portion 104 and the first insertion portion 105. As Figure 11 shown, the first insertion portion 105 is inserted into the first insertion channel 103. With this arrangement, the first transition member 101 and the second transition member 102 are connected through the cooperation of the first insertion portion 105 and the first insertion channel 103, and the connection is relatively tight. After insertion, the positions of the first transition member 101 and the second transition member 102 are fixed, improving the assembly accuracy of the first transition member 101 and the second transition member 102.

[0079] It can be understood that the first insertion portion 105 and the first body portion 104 can be an integral structure to facilitate the manufacture of the first transition member 101. Of course, the first insertion portion 105 and the first body portion 104 can also be connected by bolts or snap connections, etc. The embodiments of the present application do not limit this.

[0080] Please refer to Figure 12 In other implementations, a second insertion channel 108 communicating with the first air guiding channel 111 is provided on the first transition member 101. The second transition member 102 includes a second body portion 106 and a second insertion portion 107, and the second air guiding channel 112 penetrates through the second body portion 106 and the second insertion portion 107. The second insertion portion 107 is inserted into the second insertion channel 108. With this arrangement, it can also ensure that the connection between the first transition member 101 and the second transition member 102 is relatively tight, and at the same time, the assembly accuracy of the first transition member 101 and the second transition member 102 is improved.

[0081] Exemplarily, the second insertion part 107 and the second main body part 106 may be an integral structure to facilitate the manufacture of the second transition piece 102. Of course, the second insertion part 107 and the second main body part 106 may also be connected by means such as bolt connection or snap connection, and the embodiments of the present application do not limit this.

[0082] Please refer to Figure 13 , in some implementation manners, the functional layer 120 may also cover the side wall of the reaction channel 210. With such a setting, it is possible to prevent the formation of attachments on the side wall of the reaction channel 210 and avoid the influence of the falling off of the attachments on the yield of the semiconductor material.

[0083] In some embodiments, the reaction furnace 10 further includes a heat insulation cover 40, and the heat insulation cover 40 covers the transition piece 100. With such a setting, the heat insulation cover 40 can prevent the heat of the reaction piece 30 from being transferred to the transition piece 100, thereby reducing the temperature of the transition piece 100 to further avoid the formation of attachments on the side wall of the air guiding channel 110.

[0084] It can be understood that in the implementation manner where the transition piece 100 includes the first transition piece 101 and the second transition piece 102, the heat insulation cover 40 can cover the second transition piece 102. Since the second transition piece 102 is close to the reaction piece 30, covering the heat insulation cover 40 on the second transition piece 102 can prevent the heat from being transferred to the first transition piece 101 to reduce the temperature of the first transition piece 101.

[0085] In the above implementation manner, the material of the heat insulation cover 40 is a material with good heat insulation performance. Exemplarily, the heat insulation cover 40 may include a heat insulation felt, and the heat insulation felt may be woven by carbon fibers with a smaller length (chopped carbon fibers). A pyrolytic carbon coating is provided on the outer surface of the heat insulation felt. The pyrolytic carbon can improve the strength of the heat insulation felt and also achieve the sealing of the heat insulation felt. Of course, the material of the heat insulation cover 40 may also include asbestos, etc., and the embodiments of the present application do not limit the material of the heat insulation cover 40.

[0086] The above is only the specific implementation manner of the embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present application can easily think of changes or substitutions, which should all be covered within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claimed rights.

Claims

1. An air guiding member for a reaction furnace, the reaction furnace being used for preparing semiconductor materials, characterized in that, Comprising: A transition piece, on which a gas guiding channel is arranged, and the gas guiding channel is used to convey raw material gas to the reaction furnace; a functional layer is covered on the side wall of the gas guiding channel, and the material of the functional layer is different from that of the semiconductor material.

2. The air guide member according to claim 1, characterized in that, The functional layer completely covers the side wall of the gas guiding channel.

3. The air guide member according to claim 1 or 2, characterized in that, The functional layer also covers other surfaces of the transition piece except the side wall of the gas guiding channel.

4. The air guiding member according to any one of claims 1 to 3, characterized in that The melting point of the functional layer is higher than the generation temperature of the semiconductor material.

5. The air guiding member according to any one of claims 1-4, characterized in that, The material of the functional layer includes at least one of tantalum carbide and boron nitride.

6. The air guide member according to any one of claims 1-5, characterized in that, The transition piece includes a first transition piece and a second transition piece. The gas guiding channel includes a first gas guiding channel arranged on the first transition piece and a second gas guiding channel arranged on the second transition piece. The second gas guiding channel is used to connect the first gas guiding channel and the reaction channel, and the functional layer covers the side wall of the second gas guiding channel.

7. The air guiding member according to claim 6, characterized in that, The functional layer also covers the side wall of the first gas guiding channel.

8. The air guide according to claim 6 or 7, characterized in that A first plugging channel communicated with the second gas guiding channel is arranged on the second transition piece. The first transition piece includes a first body part and a first plugging part. The first gas guiding channel penetrates through the first body part and the first plugging part, and the first plugging part is plugged in the first plugging channel.

9. The air guide member according to claim 6 or 7, characterized in that, A second plugging channel communicated with the first gas guiding channel is arranged on the first transition piece. The second transition piece includes a second body part and a second plugging part. The second gas guiding channel penetrates through the second body part and the second plugging part, and the second plugging part is plugged in the second plugging channel.

10. A reactor for preparing semiconductor materials, characterized in that, Comprising: A reaction piece, on which a reaction channel is arranged, and the reaction channel is used to accommodate a semiconductor substrate; the reaction channel is configured to make the raw material gas react to form a semiconductor material on the semiconductor substrate. The gas guiding piece according to any one of claims 1-9, wherein the gas guiding channel is communicated with the reaction channel to convey the raw material gas to the reaction channel.

11. The reactor according to claim 10, characterized in that, The functional layer also covers the side wall of the reaction channel.

12. The reactor according to claim 10 or 11, characterized in that, The reaction piece includes a first semi-moon and a second semi-moon, which are arranged at intervals, and the first semi-moon and the second semi-moon enclose the reaction channel. The functional layer is arranged on the inner walls of the first semi-moon and the second semi-moon. A receiving groove is arranged on the inner wall of the second semi-moon, and the receiving groove is used to receive the semiconductor substrate.

13. The reactor according to any one of claims 10 to 12, characterized in that, The reaction furnace further includes a tray, and the tray is located in the reaction channel and is used to carry the semiconductor substrate.

14. The reactor according to claim 13, characterized in that, A limiting flange is arranged on the tray, and the limiting flange and the tray enclose a limiting groove, and the limiting groove is used to accommodate the semiconductor substrate.

15. The reactor according to claim 14, characterized in that, The limiting flanges are multiple, and each limiting flange and the tray enclose a limiting groove.

16. The reactor according to any one of claims 10 - 15, characterized in that, The reaction furnace further includes a heat insulation cover, and the heat insulation cover covers the transition piece.

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