Pressure resistance detection device for silicon carbide SIC chip and detection method thereof

Abstract

The invention discloses a pressure resistance detection device for a silicon carbide SIC chip and a detection method thereof, and belongs to the technical field of pressure resistance detection of silicon carbide chips, the pressure resistance detection device comprises a pressure resistance detector body, and a test rod and a test board which are arranged on the pressure resistance detector body, and the test board is fixedly provided with a substrate; according to the pressure resistance detection device for the silicon carbide SIC chip, pins of a plurality of silicon carbide chips are aligned to the chip pin jacks, the crank is rotated to drive the screw rod to rotate, and the lower pressing plate is driven to vertically slide downwards, so that the pins of the silicon carbide chips enter the bottoms of the chip pin jacks; a plurality of silicon carbide chips can be accurately fixed at a time, pressure resistance detection can be carried out on the plurality of silicon carbide chips at the same time, compared with one-by-one detection, the detection time is greatly saved, the detection effect and the production efficiency are remarkably improved, pin bending caused by manual insertion can be prevented, and the production efficiency is improved. And the detection result can more accurately reflect the real pressure resistance of the chip.

Description

Technical Field

[0001] The present invention relates to the technical field of breakdown voltage detection of silicon carbide chips, and in particular to a breakdown voltage detection device and a detection method for silicon carbide (SiC) chips. Background Art

[0002] Silicon carbide chips are semiconductor chips made of silicon carbide (SiC) and belong to the third-generation semiconductor chips. At present, in order to ensure the quality of silicon carbide chips before leaving the factory, some silicon carbide chips are usually randomly selected for breakdown voltage detection before leaving the factory. The breakdown voltage detection of silicon carbide chips usually uses a breakdown voltage detector to gradually apply voltage to the silicon carbide chips, and judges whether the breakdown voltage of the silicon carbide chips is qualified by detecting the magnitude of the current during the detection process.

[0003] After retrieval, a patent with the Chinese patent publication number CN117406035A discloses a breakdown voltage detection device for silicon carbide chips, including a detector. A voltage regulator is provided inside the detector, and further includes: a test rod plugged into the detector; a first button rotatably installed on the detector; a first cavity opened inside the detector; a replacement part, the replacement part includes a rotating rod, a plurality of fixing components and a plurality of ultra-leakage lamps. The rotating rod is rotatably installed in the first cavity, the fixing components are fixedly installed on the rotating rod, and the ultra-leakage lamps are installed in the fixing components. The following deficiencies exist in the above patent: Although the silicon carbide chips can be detected, when detecting the silicon carbide chips, especially for silicon carbide chips with pins, it is often necessary to insert their pins into the slots for fixing and then detect them. When manually inserting the pins of the silicon carbide chips into the slots, the pins are likely to be bent, resulting in damage to the silicon carbide chips. Moreover, only one silicon carbide chip can be detected at a time, and multiple silicon carbide chips cannot be detected, resulting in low detection efficiency and wasting a lot of time. Therefore, a breakdown voltage detection device and a detection method for silicon carbide (SiC) chips are specifically proposed to solve this problem. Summary of the Invention

[0004] The purpose of the present invention is to solve the problem that when detecting silicon carbide chips in the prior art, only one chip can be detected at a time when inserting the pins into the slots, and multiple silicon carbide chips cannot be detected at one time, and to propose a breakdown voltage detection device and a detection method for silicon carbide (SiC) chips.

[0005] In order to achieve the above purpose, the present invention adopts the following technical solutions: A voltage withstand detection device for a silicon carbide (SiC) chip, comprising a voltage withstand detector body, a test rod and a test bench provided on the voltage withstand detector body. A substrate is fixedly installed on the test bench. The substrate is further provided with a plurality of sliding holes, and a chip test seat is slidably connected in each of the plurality of sliding holes. A chip pin jack is provided on the chip test seat. A guide rod is provided on one side of the substrate, and a lower pressing plate is slidably connected to the guide rod. A screw rod is threadedly connected to an end of the lower pressing plate away from the guide rod.

[0006] Preferably, a plurality of partition plates are fixedly connected to the substrate, and a silicon carbide chip is provided on the chip pin jack.

[0007] Preferably, the guide rod is fixedly connected to one of the partition plates. An installation ear is fixedly connected to one side of the substrate. One end of the screw rod is rotatably connected to the installation ear, and a crank is fixedly connected to the bottom of the screw rod.

[0008] Preferably, a soft rubber pad is fixedly connected to the bottom of the lower pressing plate. A plurality of L-shaped plates are fixedly connected to both sides of the lower pressing plate. An L-shaped upper ejector rod is slidably connected in each chip pin jack. A chute opening corresponding to the L-shaped upper ejector rod is provided on both the chip test seat and the substrate. Extension plates are fixedly connected to both sides of the L-shaped upper ejector rod.

[0009] Preferably, two first springs are fixedly connected between the bottom walls of each of the plurality of chip test seats and the sliding holes. A contact plate is hinged to one side of the L-shaped plate. A first torsion spring is fixedly connected to the L-shaped plate near the top of the contact plate, and a second torsion spring is fixedly connected to the L-shaped plate near the bottom of the contact plate.

[0010] Preferably, air collecting barrels are provided on both sides of the substrate. Both of the air collecting barrels are fixedly connected to the test bench. A piston plate is slidably connected inside the air collecting barrel. A push rod is fixedly connected to the top of the piston plate. Connecting plates are fixedly connected to both sides of the lower pressing plate, and the two connecting plates are respectively fixedly connected to the two push rods.

[0011] Preferably, one end of the push rod extends to the outside of the air collecting barrel and is slidably connected to the air collecting barrel. A fixed disk is fixedly connected to the push rod. A second spring is sleeved on the push rod, and both ends of the second spring are abutted against the air collecting barrel and the fixed disk respectively.

[0012] Preferably, a cavity is provided at the bottom of each chip test seat. An inlet hole is provided on the bottom wall of the cavity of the chip test seat. An inlet pipe is fixedly connected to the inlet hole of each cavity. An installation groove is provided on one side of the substrate, and an air delivery pipe is fixedly connected in the installation groove.

[0013] Preferably, the plurality of inlet pipes are connected to the gas supply pipe, an air inlet pipe is fixedly connected between the two gas collecting barrels and the gas supply pipe, an air intake pipe is fixedly connected to the bottom of the two gas collecting barrels, a heating cover is fixedly provided on the outside of the two gas collecting barrels, and an air vent is opened at the center of each L-shaped upper push rod.

[0014] The present invention also provides a detection method for a pressure resistance detection device for a silicon carbide SIC chip, which is operated by the following steps: S1. When performing a pressure resistance test on a silicon carbide chip, align the pins of the silicon carbide chip to be tested with the pin holes on the chip test socket to perform a pre-insertion operation; S2. Then, the screw is driven to rotate by turning the crank, and the lower pressure plate is moved vertically downward under the guidance of the guide rod, so as to apply downward pressure to the top of the pre-inserted silicon carbide chip so that its pins are fully inserted into the chip pin sockets, and then the pressure resistance test is performed through the test rod.

[0015] Compared with the prior art, the present invention provides a pressure resistance detection device for silicon carbide SIC chips, which has the following beneficial effects: 1. The pressure resistance detection device for silicon carbide SIC chips aligns the pins of multiple silicon carbide chips with the chip pin sockets, drives the screw to rotate by turning the crank, drives the lower pressure plate to slide vertically downward, and makes the pins of the silicon carbide chips enter the bottom of the chip pin sockets. It can accurately fix multiple silicon carbide chips at one time and perform pressure resistance detection on multiple silicon carbide chips at the same time. Compared with detecting one by one, it greatly saves detection time, significantly improves detection effect and production efficiency, can prevent manual insertion from causing pin bending, and makes the detection result more accurately reflect the real pressure resistance performance of the chip.

[0016] 2. The pressure resistance detection device for silicon carbide SIC chip drives the screw rod to rotate by rotating the crank handle, so that the lower pressure plate moves upward, and the L-shaped plate and the contact plate move upward at the same time. At this time, the contact plate pushes up the extension plate under the action of the second torsion spring, so that multiple L-shaped upper push rods push up at the same time, slide upward in the chip pin insertion hole, and slowly push out the pins of the silicon carbide chip in the chip test seat. When the chip test seat slides to the top under the action of the first spring, it cannot continue to slide upward. At this time, the contact plate can automatically detach from the extension plate by compressing the second torsion spring downward, so that after the silicon carbide chip test is completed, there is no need to manually pull out the pins of the silicon carbide core one by one, and multiple silicon carbide chips can be pulled out from the chip test seat at one time, which is convenient and fast to detect the next batch of silicon carbide chips, and the force applied to each pin is relatively uniform, and the pin will not be damaged, which greatly improves the pressure resistance detection efficiency of the silicon carbide chip.

[0017] 3. When the pressure-resistant detection device for silicon carbide (SiC) chips presses the SiC chip downward through the lower pressing plate and inserts it into the chip pin jack, at the same time, the hot air in the air collecting barrel can be transported into the air delivery pipe through the air inlet pipe. Subsequently, the air delivery pipe transports the hot air into the cavities of each chip test seat through multiple inlet pipes, and then enters the chip pin jack through the air permeable holes of the L-shaped upper ejector rod, continuously spraying hot air upward against the pins of the SiC chip, quickly blowing away the water vapor on and around the pins of the SiC chip, and at the same time, also blowing away the dust on the pins of the SiC chip, etc., preventing damage to the electrical performance, helping to protect the chip material, avoiding short circuits, etc., and helping to make the detection of the SiC chip more stable during the pressure-resistant detection, the data results more accurate, and improving the detection efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 FIG. 6 is a front structural schematic diagram of a pressure-resistant detection device for silicon carbide (SiC) chips proposed by the present invention; Figure 2 Proposed by the present invention Figure 1 Schematic diagram of the structure of part A in FIG. 6; Figure 3 FIG. 7 is a side structural schematic diagram of a pressure-resistant detection device for silicon carbide (SiC) chips proposed by the present invention; Figure 4 FIG. 8 is a schematic diagram of the internal structure of the air collecting barrel in a pressure-resistant detection device for silicon carbide (SiC) chips proposed by the present invention; Figure 5 FIG. 9 is a front view structural schematic diagram of a pressure-resistant detection device for silicon carbide (SiC) chips proposed by the present invention; Figure 6 Proposed by the present invention Figure 5 Schematic diagram of the structure of part B in FIG. 9; Figure 7 FIG. 10 is a right view structural schematic diagram of a pressure-resistant detection device for silicon carbide (SiC) chips proposed by the present invention; Figure 8 Proposed by the present invention Figure 7 Schematic diagram of the structure of part C in FIG. 10; Figure 9 FIG. 11 is a schematic diagram of the structure of a chip test seat, a chip pin jack, an L-shaped upper ejector rod, and an air permeable hole in a pressure-resistant detection device for silicon carbide (SiC) chips proposed by the present invention; Figure 10 Proposed by the present invention Figure 9 Schematic diagram of the structure of part D in FIG. 11.

[0019] In the figure: 1, the body of the withstand voltage detector; 2, the test probe; 3, the test bench; 4, the substrate; 5, the sliding hole; 6, the chip test socket; 601, the cavity; 602, the inlet pipe; 7, the chip pin jack; 8, the guide rod; 9, the lower pressing plate; 10, the screw rod; 11, the partition plate; 12, the silicon carbide chip; 13, the mounting ear; 14, the vent hole; 15, the crank; 16, the extension plate; 17, the L-shaped plate; 18, the L-shaped upper ejector rod; 19, the first spring; 20, the abutting plate; 21, the first torsion spring; 22, the second torsion spring; 23, the air collecting barrel; 24, the piston plate; 25, the push rod; 26, the fixed disk; 27, the second spring; 28, the mounting groove; 29, the air delivery pipe; 30, the inlet pipe; 31, the suction pipe; 32, the heating cover; 33, the connecting plate; 34, the soft rubber pad. Detailed implementation manner

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments.

[0021] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention.

[0022] Embodiment 1: Refer to Figures 1-10 , a withstand voltage detection device for silicon carbide SIC chips, including the body 1 of the withstand voltage detector and the test probe 2 and the test bench 3 arranged on the body 1 of the withstand voltage detector. A substrate 4 is fixedly installed on the test bench 3. The substrate 4 is also provided with a plurality of sliding holes 5. A chip test socket 6 is slidably connected in each of the plurality of sliding holes 5. A chip pin jack 7 is opened on the chip test socket 6. A guide rod 8 is arranged on one side of the substrate 4. A lower pressing plate 9 is slidably connected to the guide rod 8. One end of the lower pressing plate 9 away from the guide rod 8 is threadedly connected with a screw rod 10.

[0023] A plurality of partition plates 11 are fixedly connected to the substrate 4, and a silicon carbide chip 12 is arranged on the chip pin jack 7.

[0024] The guide rod 8 is fixedly connected to one of the partition plates 11. An installation ear 13 is fixedly connected to one side of the substrate 4. One end of the screw rod 10 is rotatably connected to the installation ear 13, and a crank 15 is fixedly connected to the bottom of the screw rod 10.

[0025] In the present invention, during detection, the pins of multiple silicon carbide chips 12 are aligned with the chip pin sockets 7. Subsequently, by rotating the crank 15 to drive the screw 10 to rotate, the lower pressing plate 9 can be driven to slide vertically downward under the guidance of the guide rod 8 until the bottom of the lower pressing plate 9 abuts against the top of the silicon carbide chip 12. Then, continue to apply pressure downward so that the pins of the silicon carbide chip 12 enter the bottom of the chip pin socket 7, enabling multiple silicon carbide chips 12 to be accurately fixed at one time, and the voltage withstand performance of multiple silicon carbide chips 12 can be detected simultaneously. Compared with individual detection, the detection time is greatly saved, the detection effect and production efficiency are significantly improved, and it can prevent the pins from being bent due to manual insertion, making the detection result more accurately reflect the true voltage withstand performance of the chip.

[0026] Embodiment 2: Refer to Figures 1-9 , which is basically the same as Embodiment 1. Further, a soft rubber pad 34 is fixedly connected to the bottom of the lower pressing plate 9, and a plurality of L-shaped plates 17 are fixedly connected to both sides of the lower pressing plate 9. An L-shaped upper ejector rod 18 is slidably connected in each chip pin socket 7, and chute openings corresponding to the L-shaped upper ejector rod 18 are formed on both the chip test seat 6 and the substrate 4. Extension plates 16 are fixedly connected to both sides of the L-shaped upper ejector rod 18.

[0027] In the present invention, the soft rubber pad 34 can adapt to the unevenness of the top of the silicon carbide chip 12, which helps to adapt to different models of silicon carbide chips 12 for voltage withstand detection; Two first springs 19 are fixedly connected between the bottom walls of the plurality of chip test seats 6 and the sliding holes 5. A contact plate 20 is hinged to one side of the L-shaped plate 17. A first torsion spring 21 is fixedly connected to the L-shaped plate 17 near the top of the contact plate 20, and a second torsion spring 22 is fixedly connected to the L-shaped plate 17 near the bottom of the contact plate 20.

[0028] In the present invention, during the process of the lower pressing plate 9 pushing the silicon carbide chip 12 downward, it will simultaneously drive the contact plate 20 on the L-shaped plate 17 to first contact the extension plate 16, causing the chip test socket 6 to move downward and compressing the first spring 19. Under the action of the first torsion spring 21, the contact plate 20 will slowly rotate and disengage from the extension plate 16, automatically sliding across the extension plate 16. The first spring 19 helps to buffer the pins of the silicon carbide chip 12 during the insertion process, making the pin insertion effect better; when the voltage withstand test of the silicon carbide chip 12 is completed, it is necessary to pull out the pins of the silicon carbide chip 12 from the chip pin jacks 7. The traditional method is for the operator to manually pull them out. This method is very likely to bend, deform or even break the pins of the chip. At this time, the crank 15 can be rotated to drive the screw 10 to rotate, causing the lower pressing plate 9 to move upward slightly, and simultaneously driving the L-shaped plate 17 and the contact plate 20 to move upward. At this time, under the action of the second torsion spring 22, the contact plate 20 will push the extension plate 16 upward, and then make the multiple L-shaped upper ejector rods 18 eject upward simultaneously, slide upward in the chip pin jacks 7, and slowly push out the pins of the silicon carbide chip 12 in the chip test socket 6 upward. When the chip test socket 6 slides to the top under the action of the first spring 19 and cannot continue to slide upward, at this time, the contact plate 20 can automatically disengage from the extension plate 16 by compressing the second torsion spring 22 downward, so that after the test of the silicon carbide chip 12 is completed, it is not necessary to manually pull out the pins of the silicon carbide chip 12 one by one, and multiple silicon carbide chips 12 can be pulled out from the chip test socket 6 at one time, facilitating the rapid detection of the next batch of silicon carbide chips 12, and the force received by each pin is relatively uniform, without damaging the pins, greatly improving the voltage withstand test efficiency of the silicon carbide chip 12; it should be noted that buffer pads are fixed at the tops of the centers of the L-shaped upper ejector rods 18 to prevent pin damage; the first torsion spring 21 and the second torsion spring 22 are not fixed to the contact plate 20, but only play a contact state.

[0029] Embodiment 3: Refer to Figures 1-10 , which is basically the same as Embodiment 1. Further, gas collecting barrels 23 are provided on both sides of the substrate 4, and both gas collecting barrels 23 are fixedly connected to the test bench 3. A piston plate 24 is slidably connected inside the gas collecting barrel 23, a push rod 25 is fixedly connected to the top of the piston plate 24, and connecting plates 33 are fixedly connected to both sides of the lower pressing plate 9, and the two connecting plates 33 are respectively fixedly connected to the two push rods 25.

[0030] In the present invention, during the process of the lower pressing plate 9 moving downward, it will simultaneously drive the two connecting plates 33 to move downward at the same time. The connecting plates 33 push the push rods 25 downward, causing the piston plate 24 to move downward to compress the gas in the gas collecting barrel 23.

[0031] One end of the push rod 25 extends outside the air collecting barrel 23 and is slidably connected to the air collecting barrel 23. A fixed disk 26 is fixedly connected to the push rod 25. A second spring 27 is sleeved on the push rod 25. Two ends of the second spring 27 are respectively abutted against the air collecting barrel 23 and the fixed disk 26.

[0032] In the present invention, when the push rod 25 slides downwards, the second spring 27 will be compressed. When the lower pressing plate 9 resets upwards, the second spring 27 can help the push rod 25 to move slightly, pull the piston plate 24 upwards, and enable the air collecting barrel 23 to extract and store gas through the air suction pipe 31.

[0033] A cavity 601 is formed at the bottom of each chip test socket 6. An inlet hole is formed in the bottom wall of the cavity 601 of the chip test socket 6. An inlet pipe 602 is fixedly connected to the inlet hole of each cavity 601. An installation groove 28 is formed on one side of the substrate 4. An air delivery pipe 29 is fixedly connected in the installation groove 28.

[0034] Multiple inlet pipes 602 are all communicated with the air delivery pipe 29. An air inlet pipe 30 is fixedly connected between each of the two air collecting barrels 23 and the air delivery pipe 29. An air suction pipe 31 is fixedly connected to the bottom of each of the two air collecting barrels 23. A heating cover 32 is fixedly sleeved outside each of the two air collecting barrels 23. A ventilation hole 14 is formed at the center of each L-shaped upper ejector rod 18.

[0035] In the present invention, when detecting the silicon carbide chip 12, if the air humidity in the detection environment is relatively high and the water vapor content in the air is relatively large, the water vapor is likely to condense on the surfaces such as the chip pins. Especially in the humid season or in the inspection workshop without effective humidity control, the water vapor in the air is very likely to condense on the chip pins. If not removed in time, it is likely to affect the data results of the breakdown voltage detection of the silicon carbide chip 12. However, for the traditional removal of water vapor, most of them are that the operator holds a hot air blower to blow it off one by one, which is inefficient and reduces the test and production efficiency of the silicon carbide chip 12. The air inside the air collecting barrel 23 can be heated through the heating cover 32 outside the air collecting barrel 23. When the lower pressing plate 9 presses downwards on the silicon carbide chip 12 and inserts it into the chip pin jack 7, at the same time, the hot air inside the air collecting barrel 23 can be conveyed into the air delivery pipe 29 through the air inlet pipe 30. Subsequently, the air delivery pipe 29 conveys the hot air into the cavity 601 of each chip test socket 6 through multiple inlet pipes 602 respectively, and then enters the chip pin jack 7 through the ventilation hole 14 of the L-shaped upper ejector rod 18, and can continuously spray hot air upwards on the pins of the silicon carbide chip 12, quickly blowing off the water vapor on and around the pins of the silicon carbide chip 12. At the same time, it can also blow off the dust on the pins of the silicon carbide chip 12, etc., preventing damage to the electrical performance, helping to protect the chip material and avoid short circuits, etc., and helping to make the detection of the silicon carbide chip 12 more stable during the breakdown voltage detection, with more accurate data results and improved detection efficiency.

[0036] Embodiment 4: A detection method for a breakdown voltage detection device of a silicon carbide SIC chip is operated by the following steps: S1. When detecting the breakdown voltage of the silicon carbide chip 12, align the pins of the silicon carbide chip 12 to be detected with the chip pin jacks 7 on the chip test socket 6 for pre-insertion operation; S2. Subsequently, rotate the crank 15 to drive the screw 10 to rotate. Under the guidance of the guide rod 8, the lower pressing plate 9 moves vertically downward to apply downward pressure to the top of the pre-inserted silicon carbide chip 12, so that its pins are completely inserted into the chip pin jacks 7, and then the breakdown voltage detection is carried out by the test rod 2.

[0037] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the technical scope disclosed by the present invention, according to the technical solution and inventive concept of the present invention, makes equivalent substitutions or changes, and should be covered by the protection scope of the present invention.

Claims

1. A breakdown voltage detection device for a silicon carbide (SiC) chip, comprising: A breakdown voltage detector body (1), a test rod (2) and a test bench (3) provided on the breakdown voltage detector body (1), characterized in that a substrate (4) is fixedly installed on the test bench (3), and further comprising: A plurality of sliding holes (5) formed in the substrate (4), a chip test seat (6) is slidably connected in each of the plurality of sliding holes (5), a chip pin jack (7) is formed in the chip test seat (6), a guide rod (8) is provided on one side of the substrate (4), a lower pressing plate (9) is slidably connected to the guide rod (8), and a screw rod (10) is threadedly connected to one end of the lower pressing plate (9) away from the guide rod (8).

2. The voltage withstand detection device for a silicon carbide SIC chip according to claim 1, characterized in that, A plurality of partition plates (11) are fixedly connected to the substrate (4), and a silicon carbide chip (12) is provided on the chip pin jack (7).

3. The voltage withstand detection device for a silicon carbide SIC chip according to claim 2, wherein The guide rod (8) is fixedly connected to one of the partition plates (11), an installation ear (13) is fixedly connected to one side of the substrate (4), one end of the screw rod (10) is rotatably connected to the installation ear (13), and a crank (15) is fixedly connected to the bottom of the screw rod (10).

4. A voltage withstand detection device for a silicon carbide (SiC) chip according to claim 1, characterized in that, A soft rubber pad (34) is fixedly connected to the bottom of the lower pressing plate (9), a plurality of L-shaped plates (17) are fixedly connected to both sides of the lower pressing plate (9), an L-shaped upper ejector rod (18) is slidably connected in each chip pin jack (7), and sliding groove openings corresponding to the L-shaped upper ejector rod (18) are formed on both the chip test seat (6) and the substrate (4). Extension plates (16) are fixedly connected to both sides of the L-shaped upper ejector rod (18).

5. The voltage withstand detection device for a silicon carbide (SiC) chip according to claim 4, wherein Two first springs (19) are fixedly connected between the bottom walls of the plurality of chip test seats (6) and the sliding holes (5), a contact plate (20) is hinged to one side of the L-shaped plate (17), a first torsion spring (21) is fixedly connected to the L-shaped plate (17) near the top of the contact plate (20), and a second torsion spring (22) is fixedly connected to the L-shaped plate (17) near the bottom of the contact plate (20).

6. The voltage withstand detection device for a silicon carbide (SiC) chip according to claim 5, characterized in that, Gas collecting barrels (23) are provided on both sides of the substrate (4), both of the gas collecting barrels (23) are fixedly connected to the test bench (3), a piston plate (24) is slidably connected inside the gas collecting barrel (23), a push rod (25) is fixedly connected to the top of the piston plate (24), connecting plates (33) are fixedly connected to both sides of the lower pressing plate (9), and the two connecting plates (33) are respectively fixedly connected to the two push rods (25).

7. A voltage withstand detection device for a silicon carbide (SiC) chip according to claim 6, characterized in that, One end of the push rod (25) extends outside the gas collecting barrel (23) and is slidably connected to the gas collecting barrel (23), a fixed disk (26) is fixedly connected to the push rod (25), a second spring (27) is sleeved on the push rod (25), and both ends of the second spring (27) are abutted against the gas collecting barrel (23) and the fixed disk (26) respectively.

8. A voltage withstand detection device for a silicon carbide (SiC) chip according to claim 7, characterized in that, A cavity (601) is formed at the bottom of each chip test socket (6). An access hole is formed in the bottom wall of the cavity (601) of the chip test socket (6). An access pipe (602) is fixedly connected to the access hole of each cavity (601). An installation groove (28) is formed in one side of the substrate (4), and an air delivery pipe (29) is fixedly connected in the installation groove (28).

9. The voltage withstand detection device for a silicon carbide (SiC) chip according to claim 8, characterized in that, A plurality of the access pipes (602) are all communicated with the air delivery pipe (29). An air inlet pipe (30) is fixedly communicated between each of the two air collecting barrels (23) and the air delivery pipe (29). An air suction pipe (31) is fixedly communicated with the bottom of each of the two air collecting barrels (23). A heating cover (32) is fixedly sleeved outside each of the two air collecting barrels (23). A ventilation hole (14) is formed in the center of each L-shaped upper ejector rod (18).

10. A detection method for a breakdown voltage detection device of a silicon carbide (SiC) chip, including a breakdown voltage detection device of a silicon carbide (SiC) chip according to any one of claims 1-9, characterized in that, The following steps are adopted for operation: S1. When performing a withstand voltage test on the silicon carbide chip (12), align the pins of the silicon carbide chip (12) to be tested with the pin jacks (7) on the chip test socket (6) for pre-insertion operation; S2. Then, drive the screw rod (10) to rotate by rotating the crank (15). Under the guidance of the guide rod (8), the lower pressing plate (9) moves vertically downward to apply a downward pressure to the top of the pre-inserted silicon carbide chip (12) so that its pins are completely inserted into the chip pin jacks (7). Then, perform a withstand voltage test with the test rod (2).

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