Method for breaking substrate with metal film

Abstract

The invention provides a method capable of well breaking a substrate with a metal film. The method for breaking a substrate with a metal film according to the present invention comprises the steps of: forming a scribe line by scribing a first main surface side on which a metal film is provided at a specific predetermined breaking position, breaking the metal film, and extending a vertical crack into the substrate along the predetermined breaking position; and a step in which a breaking rod is brought into contact with the substrate to which the metal film is attached from the second main surface side where the metal film is not provided and the vertical crack is further extended, thereby breaking the substrate to which the metal film is attached at the planned breaking position.

Description

[0001] Relevant information of divisional application

[0002] This is a divisional application. The parent application of this divisional application is a patent application for invention with the application date of October 16, 2018, application number 201880069057.3, and invention title "Method for Dividing a Substrate with a Metal Film Attached". Technical Field

[0003] The present invention relates to the division of a substrate for a semiconductor device, and particularly to the division of a substrate having a device pattern formed on one main surface and a metal film formed on the other main surface. Background Art

[0004] As a method for dividing a substrate for a semiconductor device such as a SiC (silicon carbide) substrate, the following method is known: a scribing step of forming a scribe line on one main surface of the substrate for a semiconductor device and extending a vertical crack from the scribe line, and then a breaking step of further extending the crack in the thickness direction of the substrate by applying an external force to break the substrate for a semiconductor device (for example, refer to Patent Document 1).

[0005] The formation of the scribe line is performed by pressing and rolling a scribing wheel (cutting wheel) along a division predetermined position.

[0006] The breaking is performed by the following operation: on the other main surface side of the substrate for a semiconductor device, after the tip of a breaking blade (breaking bar) is brought into contact with the substrate for a semiconductor device along the division predetermined position, the tip is further pressed in.

[0007] In addition, the formation of the scribe line and the breaking are performed in a state where a sticky cutting tape is attached to the other main surface, and the opposing divided surfaces are separated by an expanding step of stretching the cutting tape after breaking.

[0008] As a form of dividing a substrate for a semiconductor device, there is a form of dividing a mother substrate into individual devices (singulation). The mother substrate has a device pattern formed on one main surface by two-dimensionally repeating unit patterns of semiconductor devices including semiconductor layers or electrodes, etc., and a metal film formed on the other main surface.

[0009] In the case of performing the division by the conventional method disclosed in Patent Document 1, sometimes after the breaking step, a state occurs where the metal film is not completely divided at the portion to be divided and remains continuous, that is, a thin skin remains.

[0010] In addition, even if such a portion with a thin skin remaining is generated, the metal film of the portion can still be divided (broken) by a subsequent expanding step. However, even if the division is performed, there is a problem that the metal film is likely to peel off at the division portion.

[0011] The present invention has been made in view of the above problems, and an object thereof is to provide a method for favorably cutting a substrate with a metal film attached thereto.

[0012] Background art documents

[0013] Patent documents

[0014] Patent Document 1: Japanese Patent Application Laid-Open No. 2012-146879 Summary of the invention

[0015] In order to solve the above problems, a first aspect of the present invention is characterized in that: it is a method for cutting a substrate with a metal film attached thereto, and includes: a scribing step of scribing a first main surface side of the substrate with the metal film attached thereto at a specific scribing position by a scribing tool to form a scribe line, cutting the metal film and causing a vertical crack to extend from the scribe line along the scribing position into the substrate with the metal film attached thereto; and a breaking step of bringing a breaking bar into contact with the substrate with the metal film attached thereto from a second main surface side of the substrate where the metal film is not provided to further extend the vertical crack, thereby cutting the substrate with the metal film attached thereto at the scribing position.

[0016] According to the method for cutting a substrate with a metal film attached thereto according to the first aspect, a second aspect of the present invention is characterized in that: in the breaking step, the posture of the substrate with the metal film attached thereto is reversed upside down from that in the scribing step.

[0017] According to the method for cutting a substrate with a metal film attached thereto according to the first or second aspect, a third aspect of the present invention is characterized in that: in the scribing device, the scribing step is performed in a state where the substrate with the metal film attached thereto is fixed to the stage with the first main surface side facing the scribing tool, and the scribing device includes: a stage for placing an object to be scribed; and the scribing tool for scribing the object to be scribed placed on the stage from above.

[0018] According to the method for cutting a substrate with a metal film attached thereto according to the third aspect, a fourth aspect of the present invention is characterized in that: the scribing device further includes: a camera disposed below the stage and used for observing and photographing the object to be scribed placed on the stage; and at least a range photographed by the camera in the stage is made of a transparent material.

[0019] According to the first to fourth aspects of the present invention, metal film peeling does not occur, and a substrate with a metal film attached thereto can be favorably cut. Brief description of the drawings

[0020] Figure 1 It is a side view schematically showing the configuration of a substrate (mother substrate) 10 to be cut in the method of the embodiment.

[0021] Figure 2 It is a diagram schematically showing the situation before performing the scribing process.

[0022] Figure 3 It is a diagram schematically showing the situation during the scribing process.

[0023] Figure 4 It is an image taken from the side of the metal film 3 of the substrate 10 after the scribing process.

[0024] Figure 5 It is a diagram schematically showing the situation before performing the breaking process.

[0025] Figure 6 It is a diagram schematically showing the situation during the breaking process.

[0026] Figure 7 It is a diagram schematically showing the substrate 10 after performing the second breaking process.

[0027] Figure 8 It is a captured image showing the situation of the substrate 10 for the conventional breaking process.

[0028] Figure 9 It is a captured image showing the situation of the substrate 10 for the conventional breaking process.

[0029] Figure 10 It is a captured image of the surfaces of multiple metal films 3 obtained by breaking the substrate 10 at multiple locations by the method of the embodiment. Detailed Embodiment

[0030] <Semiconductor device substrate>

[0031] Figure 1 It is a side view schematically showing the structure of the substrate (mother substrate) 10 which is the object to be broken in the method of the present embodiment. The substrate 10 is a semiconductor device substrate for which each single piece obtained by the breaking is intended to form a semiconductor device. In the present embodiment, the substrate 10 has: a base material 1; a device pattern 2 formed on one main surface side of the base material 1 and two-dimensionally repeated by unit patterns of semiconductor devices including semiconductor layers or electrodes, etc.; and a metal film 3 formed on the other main surface side of the base material 1. In other words, the substrate 10 can be called a substrate with a metal film attached.

[0032] The base material 1 is a single crystal such as SiC or Si, or a polycrystalline substrate such as ceramics. Its material, thickness, planar dimensions, etc. can be appropriately selected and set according to the type, use, function, etc. of the semiconductor device to be fabricated. As the base material 1, for example, a SiC substrate with a thickness of about 100 μm to 600 μm and a diameter of 2 to 6 inches is exemplified.

[0033] Device pattern 2 is a part in a semiconductor device to be fabricated, mainly embodying its functions or characteristics, including semiconductor layers, insulating layers, electrodes, etc. The specific composition of device pattern 2 varies depending on the type of semiconductor device. However, in this embodiment, it is assumed that device pattern 2 is composed of a thin film layer 2a formed over the entire main surface of a substrate 1 and electrodes 2b locally formed on the upper surface of the thin film layer 2a. Here, the thin film layer 2a can be a single layer or multiple layers, and the electrodes 2b can be single-layer electrodes or multi-layer electrodes. Additionally, instead of covering the entire surface of the substrate 1 with the thin film layer 2a, a form where a part of the substrate 1 is exposed may be adopted. Or, multiple electrodes 2b can be provided in one unit pattern.

[0034] The material or size of the thin film layer 2a and the electrodes 2b can be appropriately selected and set according to the type, use, function, etc. of the semiconductor device to be fabricated. For example, as the material of the thin film layer 2a, nitrides (such as GaN, AlN), oxides (such as Al2O3, SiO2), intermetallic compounds (such as GaAs), organic compounds (such as polyimide), etc. are exemplified. The material of the electrodes 2b can be appropriately selected from general electrode materials. Metals such as Ti, Ni, Al, Cu, Ag, Pd, Au, Pt, or their alloys, etc. are exemplified. Additionally, generally, the thicknesses of the thin film layer 2a and the electrodes 2b are smaller compared to the thickness of the substrate 1.

[0035] It is assumed that the metal film 3 mainly serves as a back electrode. However, in the method of this embodiment, the metal film 3 is formed over the entire main surface of the other main surface of the substrate 1 (more specifically, at least across the predetermined division position). Similar to the electrodes 2b, the metal film 3 can be a single layer or multiple layers, and its material can also be appropriately selected from general electrode materials such as metals like Ti, Ni, Al, Cu, Ag, Pd, Au, Pt, or their alloys. Additionally, generally, the thickness of the metal film 3 is smaller compared to the thickness of the substrate 1.

[0036] In this embodiment, the substrate 10 configured as above is divided along the thickness direction at a predetermined division position P determined at a specific interval in at least a specific direction in the plane. The predetermined division position P is regarded as an imaginary plane along the thickness direction of the substrate 10. In addition, in order to obtain a semiconductor device having a rectangular shape in a plan view, the predetermined division positions are also determined at appropriate intervals in the direction orthogonal to the above direction.

[0037] In addition, in Figure 1 , three predetermined division positions P separated from each other at an interval (pitch) d1 in the left - right direction in the figure are indicated by a dashed line extending beyond the substrate 10. However, in reality, more predetermined division positions P can be set in one direction. d1 is, for example, about 1.5 mm to 5 mm, and at least 0.5 mm or more.

[0038] <Scoring Process>

[0039] Hereinafter, the specific content of the dicing process performed on the substrate 10 in the dicing method of the present embodiment will be described in sequence. First, a scoring process is performed on the substrate 10.

[0040] Figure 2 is a diagram schematically showing the situation before performing the scoring process. Figure 3 is a diagram schematically showing the situation during the scoring process.

[0041] In the present embodiment, the scoring process is performed using a dicing apparatus 100. The dicing apparatus 100 includes: a stage 101 for placing an object to be diced; a dicing wheel 102 for dicing the object to be diced from above; and a camera 103 for observing and photographing the object to be diced placed on the stage 101.

[0042] The stage 101 is configured to have a horizontal upper surface as the placement surface, and can attract and fix the object to be diced placed on the placement surface by an attracting mechanism (not shown). The stage 101 is configured to be made of a transparent material such as glass at least within the imaging range of the camera 103, so that the object to be diced placed on the placement surface can be observed and photographed by the camera 103 disposed below it. This is because it is necessary to position the substrate 10 using the shape of the device pattern 2. In addition, the stage 101 can perform a two-axis movement operation and a rotation operation in the horizontal plane by a drive mechanism (not shown).

[0043] On the other hand, the dicing wheel 102 is a disk-shaped member (dicing tool) having a cutting edge 102e with an isosceles triangle shape in cross-section on its outer peripheral surface and a diameter of 2 mm to 3 mm. At least the cutting edge 102e is formed of diamond. In addition, the angle (cutting edge angle) δ of the cutting edge 102e is 100° to 150°, preferably 100° to 130° (for example, 110°). The dicing wheel 102 is rotatably held above the stage 101 in a vertical plane parallel to one horizontal movement direction of the stage 101 by a holding mechanism (not shown) that can be lifted and lowered in the vertical direction.

[0044] The camera 103 is disposed below the stage 101 so as to be able to observe and photograph directly above. The camera 103 is, for example, a CCD (Charge Coupled Device) camera.

[0045] As long as it has the above functions, a known one can be applied as the dicing apparatus 100.

[0046] As Figure 2As shown, the scribing process is performed on the device pattern 2 side of the substrate 10 on the basis of attaching a viscous cutting tape (extended tape) 4 having a planar dimension larger than the planar dimension of the substrate 10. In addition, in the following description, the substrate 10 with the cutting tape 4 attached is sometimes simply referred to as the substrate 10. For the cutting tape 4, a conventional one with a thickness of about 80 μm to 150 μm (for example, 100 μm) can be applied.

[0047] Specifically, first, as Figure 2 shown, the substrate 10 is placed and attracted and fixed on the stage 101 in a form in which the cutting tape 4 is in contact with the placed surface of the stage 101. That is, the substrate 10 is placed and fixed on the stage 101 with the metal film 3 side facing upward. At this time, the scribing wheel 102 is arranged at a height where it does not contact the substrate 10.

[0048] The posture of the substrate 10 is reversed up and down compared with the posture of the substrate in the conventional scribing process for dividing a substrate with a metal film attached. That is, in the present embodiment, as will be described later, the substrate 10 is scribed from the metal film 3 side, and the front and back of the scribing target surface are opposite compared with the case of the conventional scribing process for dividing a substrate with a metal film attached.

[0049] After fixing the substrate 10, next, positioning is performed by appropriately moving the stage 101 so that the division predetermined position P and the rotation plane of the scribing wheel 102 are in the same vertical plane. By performing the positioning, as Figure 2 shown, the tip 102e of the scribing wheel 102 is located above the metal film side end Pa of the division predetermined position P. More specifically, the metal film side end Pa of the division predetermined position P is linear, and the positioning is performed so that the scribing wheel 102 is located above one end side thereof.

[0050] After performing the positioning, the scribing wheel 102 is lowered vertically downward by a holding mechanism (not shown) until the tip 102e is pressed against the metal film side end Pa of the division predetermined position P, as shown by the arrow AR1 in Figure 2 .

[0051] At the time of pressing, the load (scribing load) applied by the tip 102e to the substrate 10 or the moving speed (scribing speed) of the stage 101 can be appropriately determined according to the constituent material of the substrate 10, especially the material or thickness of the base material 1, etc. For example, if the base material 1 contains SiC, the scribing load may be about 1 N to 10 N (for example, 3.5 N), and the scribing speed may be 100 mm / s to 300 mm / s (for example, 100 mm / s).

[0052] After the pressing, the pressing state is maintained, and the scribing wheel 102 is moved along the extension direction of the metal film side end Pa of the division predetermined position P (Figure 2 It moves in a direction (the direction perpendicular to the drawing plane). Thus, the scribing wheel 102 can roll relatively in the said direction (towards the other end of the metal film side end portion Pa).

[0053] Next, after the scribing wheel 102 is pressed and rolled along the metal film side end portion Pa in the said form, as Figure 3 shown, the metal film 3 of the substrate 10 is segmented and a scribed line SL is formed. At the same time, the vertical crack VC extends from the scribed line SL along the segmentation predetermined position P vertically downward from the device pattern 2 to the substrate 1. Based on the segmentation being performed well finally, it is desired that the vertical crack VC extends at least to the middle of the substrate 1.

[0054] At all the segmentation predetermined positions P, the scribing process is used to segment the metal film 3 and form the vertical crack VC.

[0055] Figure 4 is an image taken from the side of the metal film 3 of the substrate 10 after the scribing process. According to Figure 4 it is confirmed that the metal film 3 is segmented well by forming the scribed line SL and the metal film 3 has not peeled off.

[0056] <Breaking process>

[0057] The substrate 10 formed with the vertical crack VC as described above is next subjected to the breaking process. Figure 5 is a diagram schematically showing the situation before the breaking process is executed. Figure 6 is a diagram schematically showing the situation during the breaking process is executed. Figure 7 is a diagram schematically showing the substrate 10 after the breaking process is executed.

[0058] In the present embodiment, the breaking process is performed using a breaking device 200. The breaking device 200 includes: a holding portion 201 for placing the object to be broken; and a breaking rod 202 responsible for the breaking process.

[0059] The holding portion 201 includes a pair of unit holding portions 201a and 201b. The unit holding portions 201a and 201b are separately arranged at a specific distance (separation distance) d2 in the horizontal direction, and the entire horizontal upper surface of the two at the same height position is used as the placement surface for an object to be broken. In other words, the object to be broken is placed on the holding portion 201 in a state of being partially exposed below. The holding portion 201 is made of metal, for example.

[0060] In addition, the holding portion 201 can move the pair of unit holding portions 201a and 201b closer to and farther from each other in a predetermined direction (holding portion advancing and retreating direction) in the horizontal plane. That is to say, in the breaking device 200, the separation distance d2 is variable. Figure 5 In, the left - right direction in the figure is the holding portion advancing and retreating direction.

[0061] In addition, in the holding unit 201, an alignment operation of the object to be broken placed on the placement surface in the horizontal plane can be performed by a drive mechanism (not shown).

[0062] The breaking rod 202 is a plate-shaped metal (e.g., cemented carbide) component, and the cutting edge tip 202e shaped like an isosceles triangle in a cross-sectional view extends along the length direction of the cutting edge. Figure 5 In the figure, the breaking rod 202 is shown in such a way that the length direction of the cutting edge is perpendicular to the drawing plane. The angle (tip angle) θ of the cutting edge tip 202e is preferably 5° to 90° (e.g., 60°).

[0063] In addition, more specifically, the foremost end portion of the cutting edge tip 202e is a minute curved surface with a radius of curvature of about 5 μm to 100 μm (e.g., 100 μm).

[0064] The breaking rod 202 is arranged above the middle position (a position equidistant from them) of a pair of unit holding portions 201a and 201b in the advancing and retreating direction of the holding unit, and can be lifted and lowered in the vertical direction in a vertical plane perpendicular to the advancing and retreating direction of the holding unit by a holding mechanism (not shown).

[0065] In the breaking process using the breaking device 200 having the above configuration, it is carried out in a state where the protective film 5 is attached, covering the side and the side portion of the metal film 3 side of the scribed substrate 10 as shown. In the following description, when in the state where the protective film 5 is attached, it is sometimes simply referred to as the substrate 10. As the protective film 5, a conventional one with a thickness of about 10 μm to 75 μm (e.g., 25 μm) can be used. Figure 5 Specifically, first, as shown, the substrate 10 is placed on the holding unit 201 in such a form that the protective film 5 is in contact with the placement surface of the holding unit 201. That is, the substrate 10 is placed on the holding unit 201 with the metal film 3 side facing downward and the device pattern 2 side facing upward, that is, in a posture that is upside down compared to the scribing process. At this time, the breaking rod 202 is arranged at a height where it does not contact the substrate 10.

[0066] Specifically, first, as Figure 5 shown, the substrate 10 is placed on the holding unit 201 in a form where the protective film 5 is in contact with the placement surface of the holding unit 201. That is, the substrate 10 is placed on the holding unit 201 with the metal film 3 side facing downward and the device pattern 2 side facing upward, that is, in a posture that is upside down compared to the scribing process. At this time, the breaking rod 202 is arranged at a height where it does not contact the substrate 10.

[0067] The posture of the substrate 10 is the same as that in the scribing process, and is upside down compared to the posture of the substrate in the conventional breaking process generally performed for breaking a substrate with a metal film attached. That is, in the present embodiment, as will be described later, the breaking process of the substrate 10 is performed from the device pattern 2 side, which is opposite to the front and back of the breaking object surface compared to the case of the conventional breaking process generally performed for breaking a substrate with a metal film attached.

[0068] In addition, when determining a plurality of breaking predetermined positions at a specific interval (pitch) d1 as in the present embodiment, a pair of unit holding portions 201a and 201b are arranged such that the interval (pitch) d2 between the separation distance d2 and the breaking predetermined position P of the substrate 10 is d2 = 1.5d1 (d2 is 3 / 2 times d1). In this state, the substrate 10 is placed on the holding portion 201. This is the same as the conditions used in general breaking processes. In actual processing, as long as it is within the range of d2 = 1.0d1 to 1.75d1.

[0069] After placing the substrate 10, next, by appropriately operating the drive mechanism, the substrate 10 is positioned. Specifically, the extending direction of the breaking predetermined position P of the substrate 10 where the scribing line SL and the vertical crack VC are provided during the scribing process is made to coincide with the blade length direction of the breaking bar 202. By performing the said positioning, as Figure 6 shown, the tip 202e of the breaking bar 202 is located above the device pattern side end portion Pb of the breaking predetermined position P.

[0070] After the said positioning, as Figure 5 indicated by the arrow AR2 in, the breaking bar 202 causes the tip 202e to descend vertically downward toward the device pattern side end portion Pb of the breaking predetermined position P.

[0071] At this time, the tip 202e of the breaking bar 202 does not directly contact the device pattern side end portion Pb of the breaking predetermined position P, but as Figure 6 shown, contacts the position Pc above the device pattern side end portion Pb on the upper surface of the cutting tape 4. After the tip 202e of the breaking bar 202 contacts the cutting tape 4 at the position Pc, it descends a specific distance. That is, the substrate 10 is pressed in by a specific press-in amount. The press-in amount is preferably 0.05 mm to 0.2 mm (for example, 0.1 mm).

[0072] In this way, for the substrate 10, a state of three-point bending occurs with the tip 202e of the breaking bar 202 as the acting point and the inner ends f (fa, fb) of the respective placed surfaces of the pair of unit holding portions 201a and 201b as the fulcrums. As a result, as Figure 6 indicated by the arrow AR3 in, tensile stresses in two opposite directions act on the substrate 10. As a result, the vertical crack VC is further extended, and at the same time, the substrate 10 is once divided into two left and right parts, and a gap G is formed between the two parts.

[0073] Subsequently, after the breaking bar 202 is raised to release the press-in of the substrate 10, finally, as Figure 7 shown, the gap G closes to form a breaking surface D where the ends of the two left and right parts are in contact.

[0074] After the breaking process ends, as Figure 7 As indicated by arrow AR4, by applying a tensile stress in the in-plane direction to the cutting tape 4, the cutting tape 4 is stretched, and the substrate 10 is divided into two parts 10A and 10B at the breaking surface D. Thus, the substrate 10 is divided into two.

[0075] <Comparison with the conventional method>

[0076] Figure 8 and Figure 9 is a captured image showing the state of the substrate 10 for the conventional breaking process. More specifically, Figure 8 (a) is a captured image of a cross-section of the substrate 10 before the cutting tape is stretched, Figure 8 (b) is an enlarged image of the portion R. Figure 9 is a captured image of the surface of the metal film 3 after the stretching. In addition, Figure 10 is a captured image of the surfaces of multiple metal films 3 obtained after dividing the substrate 10 at multiple locations by the method of this embodiment.

[0077] Here, compared with the method of this embodiment described above, in the conventional breaking process, the scribing process and the breaking process are performed with the posture of the substrate 10 reversed up and down. That is, in the scribing process of the scribing device 100, a scribe line is formed in the device pattern 2, and in the breaking process, the breaking bar 202 is brought into contact with the side of the metal film 3.

[0078] In the above case, as Figure 8 indicated by arrow AR5 in (b), there are portions where the metal film 3 after the breaking process is not divided. Even in a situation where such portions exist, as long as the cutting tape 4 is stretched, the metal film can be divided. However, at the end of a single piece obtained by division, there is peeling of the metal film 3 as Figure 9 indicated by arrow AR6 in.

[0079] In contrast, in the case of applying the method of this embodiment, as Figure 10 (a) and its partial enlarged image, that is, Figure 10 (b) show that although division is performed at multiple locations, after division, no peeling of the metal film 3 as Figure 9 shown is confirmed.

[0080] As described above, according to this embodiment, when dividing a semiconductor device substrate having a device pattern on one main surface and a metal film on the other main surface by a combination of a scribing process and a breaking process, after scribing and dividing the metal film in advance and then performing the breaking process, peeling of the metal film is not caused, and good division can be achieved.

[0081] <Variation example>

[0082] In the above-described embodiment, scribing is performed using a scribing wheel. However, as long as the formation of the scribed line and the extension of the crack can be achieved well, a form in which the scribed line is formed by a tool other than the scribing wheel such as a diamond cutter head may also be used.

[0083] In the above-described embodiment, in consideration of the necessity of positioning using the device pattern in the scribing apparatus 100, at least the imaging range of the camera 103 in the stage 101 must be made of a transparent material. However, when a specific alignment mark is formed on the metal film 3 and the substrate 10 can be positioned by observing the alignment mark from above, the stage 101 does not need to be made of a transparent material.

[0084] In addition, the breaking device used in the breaking process includes a holding part 201 having a pair of unit holding parts 201a and 201b separated by a specific distance in the horizontal direction. However, instead of this, a breaking device having a holding part including an elastomer that holds the entire surface of the substrate in contact may also be used. The press-in amount in the breaking process is preferably 0.05 mm to 0.2 mm (for example, 0.1 mm).

Claims

1. A method for dividing a substrate with a metal film attached thereto, characterized in that, A method for dicing a substrate with a metal film attached thereto, wherein the substrate of the substrate with the metal film attached is a SiC substrate, on the first main surface side of the substrate with the metal film attached, the metal film is provided, on the second main surface side of the substrate with the metal film attached, a device pattern including electrodes is provided, and this method includes: A scribing step, by pressing and rolling a scribing wheel on the metal film on the first main surface side of the substrate with the metal film attached at a specific dicing predetermined position, scribing is performed to form a scribe line, and while dicing the metal film, vertical cracks are extended from the scribe line along the dicing predetermined position into the interior of the substrate with the metal film attached; and A breaking step, by making a breaking bar abut against the substrate with the metal film attached at a position where no electrode is formed from the second main surface side of the substrate with the metal film attached having the device pattern, the vertical cracks are further extended, thereby dicing the substrate with the metal film attached at the dicing predetermined position.

2. The method for dicing a substrate with a metal film attached according to claim 1, wherein, in the scribing step, the tip angle of the scribing wheel is 100° to 130°, and the scribing load is 1N to 10N.

3. The method for dicing a substrate with a metal film attached according to claim 1, wherein, in the breaking step, the breaking bar is pressed in with a pressing amount of 0.05 mm to 0.2 mm.

4. The method for dicing a substrate with a metal film attached according to claim 1 or 2, wherein, the substrate with the metal film attached has a device pattern on the second main surface, in the breaking step, the posture of the substrate with the metal film attached is reversed up and down from that in the scribing step, and the breaking bar is abutted against the second main surface having the device pattern to perform the breaking step.

5. The method for dicing a substrate with a metal film attached according to any one of claims 1 to 3, wherein, the thickness of the substrate of the substrate with the metal film attached is 0.6 mm or less.

6. The method for dicing a substrate with a metal film attached according to any one of claims 1 to 4, wherein, in a scribing device having a stage for placing a scribing object and the scribing wheel for scribing the scribing object placed on the stage from above, the scribing step is performed in a state where the substrate with the metal film attached is fixed on the stage with the first main surface side facing the scribing wheel.

7. The method for dicing a substrate with a metal film attached according to claim 6, wherein, the scribing device further includes: a camera, disposed below the stage, for observing and photographing the scribing object placed on the stage; and at least the range photographed by the camera in the stage is made of a transparent material.

Images