Light-emitting diode and light-emitting diode preparation method
By designing step structures and grooves in the epitaxial structure of the light emitting diode and sharing the first electrode, the problem of improving the brightness of the light emitting diode is solved, and the effective light emitting area and cost reduction are achieved.
Patent Information
- Application Number
- CN202510452410.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-11
- Publication Date
- 2025-07-11
AI Technical Summary
How to increase the brightness of the light emitting diode, especially to increase the effective light emitting area while maintaining or simplifying the electrode structure.
The epitaxial structure is designed as a step structure. The step structure has a step top surface and a step bottom surface, and a groove is formed on the surface of the first semiconductor layer that penetrates the second semiconductor layer and the active layer. The first electrode is located at the bottom surface of the step, the second electrode and the third electrode are located on both sides of the groove, sharing the first semiconductor layer and the electrode.
The effective luminous area increases by 5% to 15%, brightness increases, production costs decrease, process flow simplifies, and the cracking speed and yield of the light emitting diodes are improved.
Smart Images
Figure CN120302780A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of light-emitting devices, and particularly to a light-emitting diode and a method for manufacturing the light-emitting diode. Background Art
[0002] A light-emitting diode (LED) is a semiconductor device that can emit light, and has advantages such as energy saving, high brightness, high durability, long life, and light weight. It has been widely used in two major fields of backlight display and direct display.
[0003] Related technologies provide a light-emitting diode, and the structure of the light-emitting diode includes an epitaxial structure and an electrode structure. The electrode structure is electrically connected to the epitaxial structure.
[0004] In the above light-emitting diode, how to improve the brightness of the light-emitting diode is a major focus of current research. Summary of the Invention
[0005] Embodiments of the present disclosure provide a light-emitting diode and a method for manufacturing the light-emitting diode, which can increase the effective light-emitting area of the light-emitting diode, thereby improving the brightness of the light-emitting diode. The technical solution is as follows:
[0006] On the one hand, a light-emitting diode is provided, and the light-emitting diode includes:
[0007] an epitaxial structure, a first electrode, a second electrode, and a third electrode;
[0008] The epitaxial structure includes a stacked first semiconductor layer, an active layer, and a second semiconductor layer;
[0009] The epitaxial structure has a stepped structure, the stepped structure has a stepped top surface and a stepped bottom surface, the stepped bottom surface is located on the surface of the first semiconductor layer, the epitaxial structure has a groove, the groove penetrates the second semiconductor layer and the active layer, a projection of the groove on the surface of the first semiconductor layer is connected to the stepped bottom surface, the first electrode is located on the stepped bottom surface, the second electrode and the third electrode are both located on the surface of the second semiconductor layer, and the second electrode and the third electrode are respectively located on both sides of the groove.
[0010] Optionally, the width of the groove is 1 to 20 μm.
[0011] Optionally, a ratio of surface areas of the second semiconductor layer on both sides of the groove is 0.3:1 to 3:1.
[0012] Optionally, the shape of the stepped structure is a semi-circle, and a diameter side of the semi-circle is located at an edge of the epitaxial structure.
[0013] Optionally, the second electrode and the third electrode are symmetrically disposed on both sides of the groove.
[0014] On the other hand, a method for manufacturing a light-emitting diode, the method comprising:
[0015] Fabricating an epitaxial structure including a stacked first semiconductor layer, an active layer, and a second semiconductor layer;
[0016] Performing patterning on the epitaxial structure to form a step structure and a groove, the step structure having a step top surface and a step bottom surface, the step bottom surface being located on the surface of the first semiconductor layer, the groove penetrating the second semiconductor layer and the active layer, and a projection of the groove on the surface of the first semiconductor layer being connected to the step bottom surface;
[0017] Fabricating a first electrode, a second electrode, and a third electrode, the first electrode being located on the step bottom surface, the second electrode and the third electrode both being located on the surface of the second semiconductor layer, and the second electrode and the third electrode being respectively located on both sides of the groove.
[0018] Optionally, the width of the groove is 1 to 20 μm.
[0019] Optionally, a ratio of surface areas of the second semiconductor layer on both sides of the groove is from 0.3:1 to
[0021] Optionally, the shape of the step structure is a semi-circle, and a diameter side of the semi-circle is located at an edge of the epitaxial structure.
[0022] Optionally, the second electrode and the third electrode are symmetrically disposed on both sides of the groove.
[0023] The beneficial effects brought by the technical solutions provided by the embodiments of the present disclosure are:
[0024] In the embodiments of the present disclosure, the epitaxial structure has a step structure with a step top surface and a step bottom surface. The groove penetrates the second semiconductor layer and the active layer of the epitaxial structure, and a projection of the groove on the surface of the first semiconductor layer is connected to the step bottom surface, so that the second semiconductor layer and the active layer are separated into two parts by the groove.
[0025] Since these two parts share the first semiconductor layer and the first electrode, compared with two epitaxial structures each having a step and an electrode disposed thereon, the effective light-emitting area is larger, thereby improving the brightness of the light-emitting diode. Moreover, the first electrode is a common electrode for two epitaxials, and compared with separately disposing electrodes, the process is simpler and the manufacturing cost is reduced. Description of the Drawings
[0026] To more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following will briefly introduce the accompanying drawings required for the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present disclosure. For those of ordinary skill in the art, without creative efforts, other accompanying drawings can be obtained based on these drawings.
[0027] Figure 1 It is a top view of a light-emitting diode provided by an embodiment of the present disclosure;
[0028] Figure 2 It is a schematic structural diagram of a cross-section A-A' of a light-emitting diode provided by an embodiment of the present disclosure;
[0029] Figure 3 It is a schematic structural diagram of a cross-section B-B' of a light-emitting diode provided by an embodiment of the present disclosure;
[0030] Figure 4 It is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure;
[0031] Figure 5 It is a flowchart of another method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure.
[0032] The reference signs are as follows:
[0033] 10: epitaxial structure;
[0034] 100: substrate; 101: first semiconductor layer; 102: active layer; 103: second semiconductor layer; 104: current blocking layer; 105: transparent conductive layer; 106: passivation layer;
[0035] 301: first electrode; 302: second electrode; 303: third electrode;
[0036] 1001: step structure; 1002: groove; 1003: isolation groove; 1004: through hole. Detailed embodiments
[0037] To make the objectives, technical solutions, and advantages of the present disclosure clearer, the following will further describe the embodiments of the present disclosure in detail with reference to the accompanying drawings.
[0038] Figure 1 It is a top view of a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 1 , the light-emitting diode includes: an epitaxial structure 10, a first electrode 301, a second electrode 302, and a third electrode 303.
[0039] Figure 2 It is a schematic structural diagram of a cross-section A-A' of a light-emitting diode provided by an embodiment of the present disclosure. Refer toFigure 2 , the epitaxial structure 10 includes a stacked first semiconductor layer 101, an active layer 102, and a second semiconductor layer 103.
[0040] Figure 3 It is a schematic cross-sectional structure diagram of a light-emitting diode B-B' provided by an embodiment of the present disclosure. Refer to Figures 1 to 3 , the epitaxial structure 10 has a stepped structure 1001. The stepped structure 1001 has a stepped top surface and a stepped bottom surface. The stepped bottom surface is located on the surface of the first semiconductor layer 101. The epitaxial structure 10 has a groove 1002. The groove 1002 penetrates through the second semiconductor layer 103 and the active layer 102. The projection of the groove 1002 on the surface of the first semiconductor layer 101 is connected to the stepped bottom surface. The first electrode 301 is located on the stepped bottom surface. The second electrode 302 and the third electrode 303 are both located on the surface of the second semiconductor layer 103, and the second electrode 302 and the third electrode 303 are respectively located on both sides of the groove 1002.
[0041] In the embodiment of the present disclosure, the epitaxial structure has a stepped structure. The stepped structure has a stepped top surface and a stepped bottom surface. The groove penetrates through the second semiconductor layer and the active layer of the epitaxial structure. The projection of the groove on the surface of the first semiconductor layer is connected to the stepped bottom surface, so that the second semiconductor layer and the active layer are separated into two parts by the groove.
[0042] Since these two parts share the first semiconductor layer and the first electrode, compared with two epitaxial structures each having a step and a first electrode provided, the effective light-emitting area is larger, so that the brightness of the light-emitting diode is improved. Moreover, the first electrode is a common electrode for two epitaxes. Compared with separately providing electrodes, the process is simpler and the manufacturing cost is reduced.
[0043] In the embodiment of the present disclosure, the groove 1002 is a strip-shaped groove, and the width of the groove is equal everywhere, that is, it remains unchanged.
[0044] In the embodiment of the present disclosure, the width of the groove 1002 can be 1 to 20 μm.
[0045] In this implementation manner, by adopting the above width value, the groove will not be too wide to cause too much reduction in the light-emitting area of the epitaxial structure, thereby reducing the brightness of the light-emitting diode, nor will the groove be too narrow to cause too much manufacturing difficulty.
[0046] Exemplarily, the width of the groove 1002 is 10 μm.
[0047] In other embodiments, the groove 1002 is a strip-shaped groove, and the width of the groove can be gradually changed everywhere.
[0048] In the embodiment of the present disclosure, the ratio of the surface areas of the second semiconductor layer 103 on both sides of the groove 1002 can be 0.3:1 to 3:1.
[0049] In this implementation, the surface areas of the second semiconductor layer on both sides of the groove adopt the above ratio, so that the difference in the surface areas of the second semiconductor layer on both sides of the groove is not too large, resulting in uneven light emission.
[0050] Exemplarily, the ratio of the surface areas of the second semiconductor layer 103 on both sides of the groove 1002 is 1:1, that is, the areas are the same.
[0051] In the embodiment of the present disclosure, both parts of the second semiconductor layer 103 divided by the groove 1002 are rectangular.
[0052] In other embodiments, the two parts of the second semiconductor layer 103 divided by the groove 1002 can be other shapes, such as trapezoids, etc.
[0053] In the embodiment of the present disclosure, the shape of the step structure 1001 is a semi - circle, and the diameter side of the semi - circle is located at the edge of the epitaxial structure 10.
[0054] In this implementation, the semi - circular shape of the step structure is convenient for the design of the common electrode on both sides of the epitaxy.
[0055] As Figure 1 shown, the first electrode 301 is located in the middle of the semi - circle.
[0056] In other embodiments, the shape of the step structure 1001 can also be rectangular or other shapes.
[0057] In the embodiment of the present disclosure, the second electrode 302 and the third electrode 303 are symmetrically arranged on both sides of the groove 1002.
[0058] In this implementation, the symmetric arrangement of the second electrode and the third electrode on both sides of the groove can improve the uniformity of the electric field.
[0059] In other embodiments, the second electrode 302 and the third electrode 303 can also be asymmetrically arranged on both sides of the groove 1002.
[0060] In the embodiment of the present disclosure, the epitaxial structure 10 further has an isolation groove 1003 extending to the first semiconductor layer 101.
[0061] In the embodiment of the present disclosure, the light - emitting diode may further include: two current blocking layers 104 and two transparent conductive layers 105.
[0062] The two current blocking layers 104 are located on the second semiconductor layer 103 and are respectively on both sides of the groove; the two transparent conductive layers 105 are located on the second semiconductor layer 103, are respectively on both sides of the groove, and respectively wrap the two current blocking layers 104.
[0063] In this implementation, the current blocking layer and the transparent conductive layer realize the function of current spreading.
[0064] In the embodiment of the present disclosure, the light-emitting diode may further include: a passivation layer 106.
[0065] The passivation layer 106 covers the epitaxial structure 10, the step structure 1001, the groove 1002, the isolation groove 1003, the transparent conductive layer 105, the first electrode 301, the second electrode 302, and the third electrode 303, and has through holes 1004 corresponding to the first electrode 301, the second electrode 302, and the third electrode 303.
[0066] In this implementation, the passivation layer can protect the light-emitting diode, and the opened through holes can be used for electrical connection between the electrodes and external devices.
[0067] In the embodiment of the present disclosure, the light-emitting diode may further include: a substrate 100.
[0068] The first semiconductor layer 101 is located on the surface of the substrate 100.
[0069] In the embodiment of the present disclosure, the substrate 100 may be any one of substrates such as a sapphire substrate, an Si substrate, and an SiC substrate, and the present disclosure does not limit the material of the substrate.
[0070] Exemplarily, the substrate 100 is a sapphire substrate.
[0071] In the embodiment of the present disclosure, the first semiconductor layer 101 may be an N-type semiconductor layer, and the second semiconductor layer 103 may be a P-type semiconductor layer.
[0072] In the embodiment of the present disclosure, the active layer 102 may be a multi-quantum well layer, such as an InGaN / GaN multi-quantum well layer.
[0073] For example, the first semiconductor layer 101 may be an N-type GaN layer, and the second semiconductor layer 103 may be a P-type GaN layer.
[0074] In other embodiments, the first semiconductor layer 101 may be a P-type semiconductor layer, and the second semiconductor layer 103 may be an N-type semiconductor layer.
[0075] In the embodiment of the present disclosure, the current blocking layer 104 may be an AlGaN or SiO2 layer.
[0076] Exemplarily, the current blocking layer 104 is an AlGaN current blocking layer.
[0077] In the embodiment of the present disclosure, the transparent conductive layer 105 may be an indium tin oxide (ITO) layer, and ITO has good transparency and conductivity.
[0078] In an embodiment of the present disclosure, the passivation layer 106 may be a SiO2 passivation layer.
[0079] In an embodiment of the present disclosure, the first electrode 301, the second electrode 302, and the third electrode 303 may be AuGe / Au electrodes or AuBe / Au electrodes.
[0080] Exemplarily, the first electrode 301 is an AuBe / Au electrode, and the second electrode 302 and the third electrode 303 are AuGe / Au electrodes.
[0081] In an embodiment of the present disclosure, the first electrode 301 is rectangular.
[0082] In other embodiments, the first electrode 301 may also be circular or other shapes.
[0083] In an embodiment of the present disclosure, the second electrode 302 and the third electrode 303 may be composed of two parts combined. One part is strip-shaped, and the other part is circular. The circular part is connected to one end of the strip-shaped part.
[0084] In other embodiments, the second electrode 302 and the third electrode 303 are circular, rectangular, or other shapes.
[0085] It should be noted that in an embodiment of the present disclosure, the structure of the above light-emitting diode may be selectively increased or decreased, and the present disclosure does not limit this.
[0086] Figure 4 is a flowchart of a method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 4 , the method steps include:
[0087] S11. Fabricate an epitaxial structure, which includes a stacked first semiconductor layer, an active layer, and a second semiconductor layer.
[0088] In an embodiment of the present disclosure, the substrate may be a sapphire substrate.
[0089] S12. Pattern the epitaxial structure to form a step structure and a groove. The step structure has a step top surface and a step bottom surface. The step bottom surface is located on the surface of the first semiconductor layer. The groove penetrates through the second semiconductor layer and the active layer, and the projection of the groove on the surface of the first semiconductor layer is connected to the step bottom surface.
[0090] Exemplarily, this step S12 may include:
[0091] Form a patterned mask layer on the surface of the second semiconductor layer;
[0092] Under the shielding of the mask layer, an etching process is performed on the epitaxial structure to form a stepped structure and a groove extending to the first semiconductor layer.
[0093] In the embodiment of the present disclosure, the groove is a strip-shaped groove, and the width of the groove is equal everywhere, that is, it remains unchanged.
[0094] In the embodiment of the present disclosure, the width of the groove can be 1 to 20 μm.
[0095] In this implementation manner, by adopting the above width value, the groove will not be too wide, resulting in too much reduction in the light-emitting area of the epitaxial structure, and further causing a decrease in the brightness of the light-emitting diode. Nor will the groove be too narrow, causing too much difficulty in manufacturing.
[0096] Exemplarily, the width of the groove is 10 μm.
[0097] In other embodiments, the groove is a strip-shaped groove, and the width of the groove can be gradually changed.
[0098] In the embodiment of the present disclosure, the ratio of the surface areas of the second semiconductor layer on both sides of the groove can be 0.3:1 to 3:1.
[0099] In this implementation manner, by adopting the above ratio for the surface areas of the second semiconductor layer on both sides of the groove, the difference in the surface areas of the second semiconductor layer on both sides of the groove will not be too large, resulting in uneven light emission.
[0100] Exemplarily, the ratio of the surface areas of the second semiconductor layer on both sides of the groove is 1:1, that is, the areas are the same.
[0101] In the embodiment of the present disclosure, both parts of the second semiconductor layer divided by the groove are rectangles.
[0102] In other embodiments, the two parts of the second semiconductor layer divided by the groove can be other shapes, such as trapezoids, etc.
[0103] S13. Fabricate a first electrode, a second electrode, and a third electrode. The first electrode is located on the bottom surface of the step, and the second electrode and the third electrode are both located on the surface of the second semiconductor layer, and the second electrode and the third electrode are respectively located on both sides of the groove.
[0104] In the embodiment of the present disclosure, the epitaxial structure has a stepped structure with a step top surface and a step bottom surface. The groove penetrates through the second semiconductor layer and the active layer of the epitaxial structure, and the projection of the groove on the surface of the first semiconductor layer is connected to the step bottom surface, so that the second semiconductor layer and the active layer are separated into two parts by the groove.
[0105] Since these two parts share the first semiconductor layer and the first electrode, compared with the case where each of the two epitaxial structures has a step and the first electrode is provided, the effective light-emitting area is larger, thereby improving the brightness of the light-emitting diode. Moreover, since the first electrode is a common electrode for the two epitaxies, the process is simpler than separately providing electrodes, and the manufacturing cost is reduced.
[0106] Figure 5 is a flowchart of another method for manufacturing a light-emitting diode provided by an embodiment of the present disclosure. Refer to Figure 5 , the method steps include:
[0107] S21. Form a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate in sequence, where the first semiconductor layer, the active layer, and the second semiconductor layer constitute an epitaxial structure.
[0108] In one example, step S21 includes:
[0109] The first step is to fabricate the first semiconductor layer on the substrate.
[0110] In the embodiment of the present disclosure, the substrate can be any one of substrates such as a sapphire substrate, an Si substrate, and an SiC substrate, and the material of the substrate is not limited in the embodiment of the present disclosure.
[0111] Exemplarily, the substrate is a sapphire substrate.
[0112] In the embodiment of the present disclosure, the first semiconductor layer is an N-type GaN layer.
[0113] The second step is to fabricate the active layer on the first semiconductor layer.
[0114] In the embodiment of the present disclosure, the active layer is a multi-quantum well layer.
[0115] The third step is to fabricate the second semiconductor layer on the active layer.
[0116] In the embodiment of the present disclosure, the second semiconductor layer is a P-type GaN layer.
[0117] In the embodiments of the present disclosure, a Veeco K465i or C4 or RB MOCVD (Metal Organic Chemical Vapor Deposition) device or an AIXTRON metal organic chemical vapor deposition device can be used to realize the growth of the above semiconductor layer. High-purity H2 (hydrogen) or high-purity N2 (nitrogen) or a mixed gas of high-purity H2 and high-purity N2 is used as the carrier gas, high-purity NH3 is used as the N source, trimethylgallium (TMGa) and triethylgallium (TEGa) are used as the gallium sources, trimethylindium (TMIn) is used as the indium source, silane (SiH4) is used as the N-type dopant, trimethylaluminum (TMAl) is used as the aluminum source, and bis(cyclopentadienyl)magnesium (CP2Mg) is used as the P-type dopant.
[0118] It should be noted that other devices can also be used to fabricate the above semiconductor layer, and the present disclosure does not limit this.
[0119] S22. Pattern the epitaxial structure to form a step structure, a groove, and an isolation groove.
[0120] Among them, step S22 may include the following steps:
[0121] Form a patterned mask layer on the surface of the second semiconductor layer; under the shielding of the mask layer, etch the epitaxial structure to form a step structure, a groove, and an isolation groove that extend to the first semiconductor layer. The projection of the groove on the surface of the first semiconductor layer is connected to the bottom surface of the step, and the isolation groove is located at both ends of the epitaxial structure.
[0122] In the embodiments of the present disclosure, the shape of the step structure is a semi-circle, and the diameter side of the semi-circle is located at the edge of the epitaxial structure.
[0123] In this implementation manner, the semi-circular shape of the step structure is convenient for the design of common electrodes on both sides of the epitaxy.
[0124] In other embodiments, the shape of the step structure can also be rectangular or other shapes.
[0125] In the embodiments of the present disclosure, the groove is a strip-shaped groove, and the width of the groove is equal everywhere, that is, it remains unchanged.
[0126] In the embodiments of the present disclosure, the width of the groove can be 1 - 20 μm.
[0127] In this implementation manner, with the above width value, the groove will not be too wide, resulting in too much reduction in the light-emitting area of the epitaxial structure, thereby causing a decrease in the brightness of the light-emitting diode, nor will the groove be too narrow, causing too much difficulty in manufacturing.
[0128] Exemplarily, the width of the groove is 10 μm.
[0129] In other embodiments, the groove is a strip-shaped groove, and the width of the groove can be gradually changed at various positions.
[0130] In the embodiments of the present disclosure, the ratio of the surface areas of the second semiconductor layer on both sides of the groove can be 0.3:1 to 3:1.
[0131] In this implementation manner, the second semiconductor layer adopts the above ratio of the surface areas on both sides of the groove, so that the difference in the surface areas of the second semiconductor layer on both sides of the groove is not too large, resulting in uneven light emission.
[0132] Exemplarily, the ratio of the surface areas of the second semiconductor layer on both sides of the groove is 1:1, that is, the areas are the same.
[0133] In the embodiments of the present disclosure, both parts of the second semiconductor layer divided by the groove are rectangles.
[0134] In other embodiments, the two parts of the second semiconductor layer divided by the groove can be other shapes, such as trapezoids, etc.
[0135] S23. Fabricate a current blocking layer on the epitaxial structure.
[0136] In the embodiments of the present disclosure, there are two current blocking layers, which are respectively located on the second semiconductor layers on both sides of the groove.
[0137] In the embodiments of the present disclosure, the current blocking layer can be an AlGaN or SiO2 layer.
[0138] Exemplarily, the current blocking layer is an AlGaN current blocking layer.
[0139] Exemplarily, this step S23 may include:
[0140] Deposit a current blocking film layer; pattern the current blocking film layer to obtain the current blocking layer.
[0141] Among them, an electron beam evaporation device is used to evaporate the current blocking film layer on the surface of the second semiconductor layer of the epitaxial structure. Pattern the current blocking film layer may include: spin-coating photoresist; forming a mask pattern through exposure and development; wet-etching the current blocking film layer under the shielding of the mask pattern.
[0142] S24. Fabricate a transparent conductive layer on the current blocking layer.
[0143] In the embodiments of the present disclosure, there are two transparent conductive layers, which respectively wrap the current blocking layers on the second semiconductor layers on both sides of the groove.
[0144] In the embodiments of the present disclosure, the transparent conductive layer can be an ITO layer. ITO has good transparency and conductivity, and it allows light to pass through while also conducting current to form an electrical connection.
[0145] Exemplarily, step S24 may include:
[0146] Depositing a layer of ITO thin film; patterning the ITO thin film to obtain a transparent conductive layer.
[0147] Among them, the ITO thin film may be formed by evaporation coating. Patterning the ITO thin film may include: spin-coating photoresist; forming a mask pattern by exposure and development; wet-etching the ITO thin film under the shielding of the mask pattern.
[0148] S25. Fabricating a first electrode, a second electrode, and a third electrode.
[0149] Exemplarily, step S25 may include:
[0150] Fabricating the first electrode on the bottom surface of the step, and fabricating the second electrode and the third electrode on the transparent conductive layer.
[0151] Among them, the first electrode, the second electrode, and the third electrode may be fabricated by a deposition process.
[0152] In the embodiments of the present disclosure, the first electrode, the second electrode, and the third electrode may be AuGe / Au electrodes or AuBe / Au electrodes.
[0153] Exemplarily, the first electrode is an AuBe / Au electrode, and the second electrode and the third electrode are AuGe / Au electrodes.
[0154] In the embodiments of the present disclosure, the second electrode and the third electrode are symmetrically arranged on both sides of the groove.
[0155] In this implementation manner, symmetrically arranging the second electrode and the third electrode on both sides of the groove can improve the uniformity of the electric field.
[0156] In other embodiments, the second electrode and the third electrode may also be asymmetrically arranged on both sides of the groove.
[0157] In the embodiments of the present disclosure, the first electrode is rectangular.
[0158] In other embodiments, the first electrode may also be circular or other shapes.
[0159] In the embodiments of the present disclosure, the second electrode and the third electrode may be composed of two parts, one part is strip-shaped, and the other part is circular, and the circular part is connected to one end of the strip-shaped part.
[0160] In other embodiments, the second electrode and the third electrode are circular, rectangular, or other shapes.
[0161] S26. Fabricate a passivation layer that covers the epitaxial structure, the step structure, the groove, the transparent conductive layer, the first electrode, the second electrode, and the third electrode, and has through holes corresponding to the first electrode, the second electrode, and the third electrode.
[0162] In an embodiment of the present disclosure, step S26 may include:
[0163] First step, coat the surfaces of the epitaxial structure, the step structure, the groove, the transparent conductive layer, the first electrode, the second electrode, and the third electrode with SOD.
[0164] Exemplarily, the coating process is as follows: Spin-coat an SOD material (SiO2) on the light-emitting diode chip.
[0165] Second step, perform high-temperature baking on the coated film layer to form a SiO2 passivation layer.
[0166] Third step, fabricate through holes in the passivation layer.
[0167] It has been experimentally proven that the light-emitting diode fabricated by the embodiment of the present disclosure has an effective light-emitting area 5% - 15% larger than that of the light-emitting diode fabricated by the related art. Moreover, the process flow of the embodiment of the present disclosure is simple, the scribing speed of the light-emitting diode is increased, the yield is increased, and the sorting cost of the light-emitting diode is decreased.
[0168] The above are only optional embodiments of the present disclosure, and are not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present disclosure shall be included within the protection scope of the present disclosure.
Claims
1. A light-emitting diode, characterized in that, The light-emitting diode includes: an epitaxial structure (10), a first electrode (301), a second electrode (302), and a third electrode (303); The epitaxial structure (10) includes a stacked first semiconductor layer (101), an active layer (102), and a second semiconductor layer (103); The epitaxial structure (10) has a stepped structure (1001) with a stepped top surface and a stepped bottom surface. The stepped bottom surface is located on the surface of the first semiconductor layer (101). The epitaxial structure (10) has a groove (1002) that penetrates through the second semiconductor layer (103) and the active layer (102). The projection of the groove (1002) on the surface of the first semiconductor layer (101) is connected to the stepped bottom surface. The first electrode (301) is located on the stepped bottom surface, and the second electrode (302) and the third electrode (303) are both located on the surface of the second semiconductor layer (103), and the second electrode (302) and the third electrode (303) are respectively located on both sides of the groove (1002).
2. The light emitting diode according to claim 1, characterized in that, The width of the groove (1002) is 1 to 20 μm.
3. The light-emitting diode according to claim 1 or 2, characterized in that The ratio of the surface areas of the second semiconductor layer (103) on both sides of the groove (1002) is 0.3:1 to 3:
1.
4. The light-emitting diode according to claim 1 or 2, characterized in that, The shape of the stepped structure (1001) is a semi-circle, and the diameter side of the semi-circle is located at the edge of the epitaxial structure (10).
5. The light-emitting diode according to claim 1 or 2, wherein The second electrode (302) and the third electrode (303) are symmetrically arranged on both sides of the groove (1002).
6. A method for preparing a light-emitting diode, characterized in that, The method includes: Fabricating an epitaxial structure that includes a stacked first semiconductor layer, an active layer, and a second semiconductor layer; Performing patterning on the epitaxial structure to form a stepped structure and a groove. The stepped structure has a stepped top surface and a stepped bottom surface. The stepped bottom surface is located on the surface of the first semiconductor layer. The groove penetrates through the second semiconductor layer and the active layer. The projection of the groove on the surface of the first semiconductor layer is connected to the stepped bottom surface; Fabricating a first electrode, a second electrode, and a third electrode. The first electrode is located on the stepped bottom surface, and the second electrode and the third electrode are both located on the surface of the second semiconductor layer, and the second electrode and the third electrode are respectively located on both sides of the groove.
7. The method for manufacturing a light-emitting diode according to claim 6, characterized in that, The width of the groove is 1 to 20 μm.
8. The method for preparing a light-emitting diode according to claim 6 or 7, characterized in that, The ratio of the surface areas of the second semiconductor layer on both sides of the groove is 0.3:1 to 3:
1.
9. The method for manufacturing a light-emitting diode according to claim 6 or 7, characterized in that, The shape of the stepped structure is a semi-circle, and the diameter side of the semi-circle is located at the edge of the epitaxial structure.
10. The method for preparing a light-emitting diode according to claim 6 or 7, characterized in that, The second electrode and the third electrode are symmetrically arranged on both sides of the groove.