System and method for online evaluation of power device degradation effects

Abstract

The application relates to an online evaluation system and method for degradation effects of a power device, and relates to the technical field of testing. The system comprises a high-power microwave irradiation device, a transient extreme stress loading device and a semiconductor parameter analyzer; the power device is arranged in the high-power microwave irradiation device and is connected with the transient extreme stress loading device and the semiconductor parameter analyzer respectively; the high-power microwave irradiation device is used for providing high-power microwave irradiation stress to the power device; the transient extreme stress loading device is used for providing transient extreme stress to the power device; the semiconductor parameter analyzer is used for acquiring initial electrical parameters of the power device, acquiring test electrical parameters of the power device subjected to the high-power microwave irradiation stress and the transient extreme stress, and determining an online evaluation result of degradation effects of the power device according to the initial electrical parameters and the test electrical parameters. The application can online evaluate the degradation of the power device under the high-power microwave irradiation stress and the transient extreme stress.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of testing, in particular to a power device degradation effect online evaluation system and method. BACKGROUND

[0002] With the rapid development of unmanned aerial vehicle technology, it is not only widely used in civil fields such as disaster rescue, power inspection, surveying and mapping, and agricultural plant protection, but also plays an increasingly significant role in military fields.

[0003] Generally, high power microwave (HPM) can interfere or destroy the electronic system of the unmanned aerial vehicle through high power electromagnetic pulse, which can induce high voltage and large current in the electronic system of the unmanned aerial vehicle, resulting in degradation or failure of the power device inside the electronic system of the unmanned aerial vehicle, causing signal distortion, equipment failure or function confusion of the unmanned aerial vehicle. Therefore, how to accurately test and evaluate the degradation characteristics of the power device under the irradiation of high power microwave is a problem to be solved. SUMMARY

[0004] Therefore, it is necessary to provide a power device degradation effect online evaluation system and method, which can test and evaluate the electrical parameter degradation characteristics of the power device under the irradiation of high power microwave and transient extreme stress.

[0005] The embodiment of the present application provides a power device degradation effect online evaluation system, which comprises a high power microwave irradiation device, a transient extreme stress loading device and a semiconductor parameter analyzer; the power device is arranged in the high power microwave irradiation device and is connected with the transient extreme stress loading device and the semiconductor parameter analyzer respectively; wherein,

[0006] The high power microwave irradiation device is used for providing high power microwave irradiation stress to the power device;

[0007] The transient extreme stress loading device is used for providing transient extreme stress to the power device;

[0008] The semiconductor parameter analyzer is used for acquiring initial electrical parameters of the power device, acquiring test electrical parameters of the power device subjected to the high power microwave irradiation stress and the transient extreme stress, and determining online evaluation results of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters.

[0009] In one embodiment, the transient extreme stress loading device comprises:

[0010] A gate driving circuit connected with the gate of the power device and used for providing a gate driving signal;

[0011] a transient extreme stress loading circuit connected with the first pole and the second pole of the power device respectively, for providing the transient extreme stress; the transient extreme stress includes at least one of short-circuit current stress, avalanche stress and inrush current stress;

[0012] a control circuit connected with the gate driving circuit and the transient extreme stress loading circuit respectively, for controlling the working state of the gate driving circuit and the transient extreme stress loading circuit to provide the transient extreme stress to the power device.

[0013] In one of the embodiments, the transient extreme stress loading circuit includes a short-circuit current stress loading module for providing the short-circuit current stress to the power device; wherein,

[0014] the short-circuit current stress loading module includes a first capacitor, a first resistor and a first DC power supply, the first end of the first capacitor is connected with the first end of the first resistor and the second pole of the power device respectively, the second end of the first capacitor is connected with the first pole of the power device, and the second end of the first capacitor is grounded, the second end of the first resistor is grounded through the first DC power supply, and the control end of the first DC power supply is connected with the control circuit.

[0015] In one of the embodiments, the transient extreme stress loading circuit includes an avalanche stress loading module for providing the avalanche stress to the power device; wherein,

[0016] the avalanche stress loading module includes a second capacitor, a first inductor and a second DC power supply; wherein, the first end of the second capacitor is connected with the first end of the first inductor and the first end of the second DC power supply respectively, the second end of the second capacitor is connected with the first pole of the power device and the second end of the second DC power supply respectively, the second end of the second capacitor is grounded, the second end of the first inductor is connected with the second pole of the power device, and the control end of the second DC power supply is connected with the control circuit.

[0017] In one of the embodiments, the transient extreme stress loading circuit includes an inrush current stress loading module for providing the inrush current stress to the power device; wherein,

[0018] The surge current stress loading module comprises a rectifier bridge, a switch tube and a second inductor; wherein the first end of the rectifier bridge is connected with the first pole of the switch tube, the second end of the rectifier bridge is connected with the second pole of the power device, and the second end of the rectifier bridge is grounded, the control end of the rectifier bridge is connected with the control circuit, the second pole of the switch tube is connected with the first pole of the power device through the second inductor, and the gate of the switch tube is connected with the gate drive circuit.

[0019] In one of the embodiments, the high-power microwave irradiation device comprises:

[0020] a resonant cavity, wherein the power device is arranged in the resonant cavity;

[0021] a high-power microwave radiation source for providing a high-power microwave signal;

[0022] an excitation probe arranged in the resonant cavity and connected with the high-power microwave radiation source, for generating resonance in the resonant cavity according to the high-power microwave signal and providing the high-power microwave irradiation stress to the power device.

[0023] In one of the embodiments, the high-power microwave radiation source comprises a microwave signal source, a power amplifier, a circulator and a directional coupler; wherein,

[0024] the microwave signal source is configured to provide a microwave signal;

[0025] the power amplifier is connected with the microwave signal source, and the power amplifier is configured to perform power amplification processing on the microwave signal and output a high-power microwave signal;

[0026] the circulator is connected with the power amplifier and the directional coupler respectively, and the circulator is configured to transmit the high-power microwave signal from the power amplifier to the directional coupler;

[0027] the directional coupler is connected with the excitation probe, and the directional coupler is configured to transmit the high-power microwave signal from the circulator to the excitation probe.

[0028] Embodiments of the present application provide a power device degradation effect online evaluation method, the method comprises:

[0029] obtaining initial electrical parameters of a power device;

[0030] applying high-power microwave irradiation stress and transient extreme stress to the power device;

[0031] obtaining test electrical parameters of the power device subjected to the high-power microwave irradiation stress and the transient extreme stress;

[0032] obtaining an online evaluation result of the degradation effect of the power device according to the initial electrical parameter and the test electrical parameter.

[0033] In one of the embodiments, the obtaining the online evaluation result of the degradation effect of the power device according to the initial electrical parameter and the test electrical parameter comprises:

[0034] judging whether the power device is failed according to the initial electrical parameter and the test electrical parameter;

[0035] in the case that the power device is not failed, adjusting at least one of the high-power microwave irradiation stress and the transient extreme stress, and performing again the step of obtaining the test electrical parameter of the power device subjected to the high-power microwave irradiation stress and the transient extreme stress;

[0036] in the case that the power device is failed, obtaining an online evaluation result of the degradation effect of the power device according to the initial electrical parameter and the test electrical parameter, the online evaluation result being used to characterize the failure condition of the power device.

[0037] In one of the embodiments, the applying the high-power microwave irradiation stress and the transient extreme stress to the power device comprises:

[0038] obtaining a test condition parameter of the power device; the test condition parameter comprises a high-power microwave irradiation condition parameter and a transient extreme stress condition parameter;

[0039] applying the high-power microwave irradiation stress and the transient extreme stress to the power device according to the test condition parameter.

[0040] The power device degradation effect online evaluation system and method, the power device degradation effect online evaluation system comprises a high-power microwave irradiation device, a transient extreme stress loading device and a semiconductor parameter analyzer; the power device is arranged in the high-power microwave irradiation device and is connected with the transient extreme stress loading device and the semiconductor parameter analyzer respectively; wherein the high-power microwave irradiation device is used for providing high-power microwave irradiation stress to the power device; the transient extreme stress loading device is used for providing transient extreme stress to the power device; the semiconductor parameter analyzer is used for acquiring the initial electrical parameter of the power device, and acquiring the test electrical parameter of the power device subjected to the high-power microwave irradiation stress and the transient extreme stress, and determining the online evaluation result of the degradation effect of the power device according to the initial electrical parameter and the test electrical parameter. The high-power microwave irradiation device, the transient extreme stress loading device and the semiconductor parameter analyzer are organically combined in the application, and the real-time online evaluation and accurate and comprehensive evaluation of the degradation effect of the power device under complex working conditions are realized. By combining the high-power microwave with the transient extreme stress, the actual working conditions can be approached more closely, the degradation behavior and mechanism of the power device under complex working conditions are comprehensively analyzed and evaluated based on the change of the electrical parameter. The application not only provides new suggestions and references for improving the reliability of the power device, but also provides strong experimental support for the high-power microwave protection of the unmanned aerial vehicle power module and the electric drive module and other products, and has a wide application prospect. BRIEF DESCRIPTION OF DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0042] Figure 1 FIG. 1 is a structural schematic diagram of a power device degradation effect online evaluation system according to an embodiment;

[0043] Figure 2 FIG. 2 is a structural schematic diagram of a power device degradation effect online evaluation system according to an embodiment;

[0044] Figure 3 FIG. 3 is a structural schematic diagram of a power device degradation effect online evaluation system according to an embodiment;

[0045] Figure 4 FIG. 4 is a structural schematic diagram of a power device degradation effect online evaluation system according to an embodiment;

[0046] Figure 5 FIG. 5 is a structural schematic diagram of a power device degradation effect online evaluation system according to an embodiment;

[0047] Figure 6 Fig. 6 is a schematic diagram of a structure of a power device degradation effect online evaluation system according to an embodiment;

[0048] Figure 7 Fig. 7 is a schematic diagram of a structure of a power device degradation effect online evaluation system according to an embodiment;

[0049] Figure 8 Fig. 8 is a schematic diagram of a structure of a device clamp according to an embodiment;

[0050] Figure 9 Fig. 9 is a flowchart of a power device degradation effect online evaluation method according to an embodiment;

[0051] Figure 10 Fig. 10 is a flowchart of a power device degradation effect online evaluation method according to another embodiment;

[0052] Figure 11 Fig. 11 is a flowchart of a power device degradation effect online evaluation method according to yet another embodiment.

[0053] BRIEF DESCRIPTION OF THE DRAWINGS

[0054] 10, high-power microwave irradiation device; 11, resonant cavity; 12, high-power microwave radiation source; 121, microwave signal source; 122, power amplifier; 123, circulator; 124, directional coupler; 1241, first directional coupler; 1242, second directional coupler; 13, excitation probe; 20, transient extreme stress loading device; 21, gate drive circuit; 211, first gate drive module; 2111, signal generator; 2112, first gate driver; 212, second gate drive module; 2121, second gate driver; 213, third gate drive module; 2131, third gate driver; 2132, fourth gate driver; 22, transient extreme stress loading circuit; 221, short-circuit current stress loading module; 222, avalanche stress loading module; 223, inrush current stress loading module; 2231, rectifier bridge; 2232, switch tube; 224, gating module; 23, control circuit; 30, semiconductor parameter analyzer; 31, dynamic parameter testing equipment; 32, static parameter testing equipment; 33, oscilloscope; 34, avalanche withstand tester; 40, power device; 50, power meter; 60, device clamp; 61, clamp body; 611, first clamp body; 612, second clamp body; 62, signal terminal. DETAILED DESCRIPTION

[0055] For the purpose of promoting an understanding of the application, the application will now be described in greater detail with reference to the figures. The embodiments shown in the figures are intended to explain the present application and are not meant to limit the present application. Rather, the intention is to convey an understanding of the present application by descriptions and illustrations in connection with these embodiments.

[0056] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

[0057] It should be understood that the terms "first", "second" and so on as used herein are used to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, a first resistor can be referred to as a second resistor without departing from the scope of the application, and similarly, a second resistor can be referred to as a first resistor. Both the first resistor and the second resistor are resistors, but they are not the same resistor.

[0058] It should be understood that "connection" in the following embodiments means that the circuits, modules, units, etc. connected to each other have electrical signal or data transmission.

[0059] It should be understood that "at least one" means one or more, and "multiple" means two or more. "At least part of an element" means part or all of the element.

[0060] As used herein, the singular forms "a", "an" and "the" include plural referents unless the context clearly dictates otherwise. It should also be understood that the term "comprise / comprising" or "have / having" specifies the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but does not exclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in the specification includes any and all combinations of the related listed items.

[0061] As described in the background, power devices are prone to degradation or even failure in a high-power microwave environment. Considering the transient extreme stress that may be encountered in practical working conditions such as unmanned aerial vehicle climbing and rapid maneuvering, the power device itself will be subjected to large current, high electric field, hot electron effect, etc. When the power device operates in extreme conditions under high-power microwave radiation, it is more likely to degrade or fail.

[0062] Based on the above, the embodiment of the present application provides a power device degradation effect online evaluation system and method, which can accurately test and evaluate the degradation law of the power device under the action of high-power microwave irradiation and experience transient extreme stress, thereby providing an important reference basis for the high-power microwave protection design of the unmanned aerial vehicle.

[0063] In one embodiment, as shown in Figure 1 a power device degradation effect online evaluation system includes a high-power microwave irradiation device 10, a transient extreme stress loading device 20, and a semiconductor parameter analyzer 30.

[0064] The power device 40 is a semiconductor device for processing and controlling the conversion and transmission of electric energy. In the embodiment of the present application, the power device 40 is a power device 40 subjected to degradation testing, which can be denoted as DUT. For example, the power device 40 can be a power device 40 applied to an unmanned aerial vehicle (such as a motor module and / or an electric drive module). The power device 40 can include any one of a silicon (Si) device, a silicon carbide (SiC) device, and a gallium nitride (GaN) device, and the power device 40 can also include at least one of an insulated gate bipolar transistor (IGBT), a metal oxide semiconductor field effect transistor (MOSFET), and a thyristor. In application, the power device 40 subjected to degradation testing can be selected according to actual testing requirements, which is not limited herein.

[0065] The power device 40 is arranged in the high-power microwave irradiation device 10. The high-power microwave irradiation device 10 is used to provide high-power microwave irradiation stress to the power device 40. During testing, the power device 40 can be arranged in the high-power microwave irradiation device 10 to apply high-power microwave irradiation stress to the power device 40 in the high-power microwave irradiation device 10, thereby realizing online evaluation of the degradation effect of the power device 40 under high-power microwave irradiation stress.

[0066] The power device 40 is connected to the transient extreme stress loading device 20 and the semiconductor parameter analyzer 30, respectively. The power device 40 includes a gate, a first pole, and a second pole. For example, the power device 40 includes a gallium nitride device, and the gallium nitride device includes a gate, a source, and a drain. For another example, the power device 40 includes an insulated gate bipolar transistor, and the insulated gate bipolar transistor includes a gate, a collector, and an emitter. In application, the corresponding electrodes can be determined according to the type of the power device 40, which is not limited herein. The gate, the first pole, and the second pole of the power device 40 are connected to the transient extreme stress loading device 20, respectively. The gate, the first pole, and the second pole of the power device 40 are connected to the semiconductor parameter analyzer 30, respectively.

[0067] For example, when the power device 40 is a gallium nitride device, the first pole of the power device 40 can be a source pole, and the second pole of the power device 40 can be a drain pole. When the power device 40 is an IGBT, the first pole of the power device 40 can be an emitter pole, and the second pole of the power device 40 can be a collector pole. In applications, the poles of the power device 40 can be determined according to the specific type of the power device 40, which is not limited herein.

[0068] The transient extreme stress loading device 20 is configured to provide a transient extreme stress to the power device 40. The transient extreme stress refers to a high stress state experienced by the power device 40 in a short time that exceeds the normal working condition of the power device 40. The transient extreme stress can include at least one of a short-circuit current stress, an avalanche stress, and a surge current stress. The transient extreme stress can be set according to actual test requirements, which is not limited herein.

[0069] The semiconductor parameter analyzer 30 is configured to obtain an initial electrical parameter of the power device 40, obtain a test electrical parameter of the power device 40 subjected to the high-power microwave irradiation stress and the transient extreme stress, and determine an online evaluation result of a degradation effect of the power device 40 according to the initial electrical parameter and the test electrical parameter. The online evaluation result is used to represent the degradation characteristics of the power device 40 subjected to the high-power microwave irradiation stress and the transient extreme stress. The initial electrical parameter refers to an electrical parameter of the power device 40 obtained by testing before the power device 40 is subjected to the high-power microwave irradiation stress and the transient extreme stress. The test electrical parameter refers to an electrical parameter of the power device 40 obtained by testing after the power device 40 is subjected to the high-power microwave irradiation stress and the transient extreme stress. The test electrical parameter can include an electrical parameter of the power device 40 obtained by testing during the process of the power device 40 being subjected to the high-power microwave irradiation stress and the transient extreme stress, or an electrical parameter of the power device 40 obtained by testing after the power device 40 is subjected to the high-power microwave irradiation stress and the transient extreme stress, which is not limited herein.

[0070] In the embodiments of the present application, the electrical parameter, including the initial electrical parameter and the test electrical parameter, is a key index for describing the electrical performance of the power device 40. The electrical parameter can include at least one of a transfer characteristic, an output characteristic, and a leakage current characteristic. The transfer characteristic describes the relationship between the input voltage and the output current. The output characteristic reflects the voltage-current relationship of the power device 40 under different working conditions. The leakage current characteristic refers to a small current passing through the power device 40 in the off state, i.e., without actively applying a signal to turn on the power device 40. In applications, the electrical parameter is not limited to the above types, and can also be other indexes capable of evaluating the degradation degree of the device, for example, the electrical parameter can also include a threshold voltage, a breakdown voltage, a conduction resistance, a switching time, and a switching speed, etc., which is not limited herein.

[0071] The power device degradation effect online evaluation system provided by the embodiment of the application organically combines the high-power microwave irradiation device 10, the transient extreme stress loading device 20 and the semiconductor parameter analyzer 30, and realizes real-time online evaluation and accurate and comprehensive evaluation of the degradation effect of the power device 40 under complex working conditions. By combining high-power microwave and transient extreme stress, the system can be closer to the actual working conditions, comprehensively analyze and evaluate the degradation behavior and mechanism of the power device 40 under complex working conditions based on the change of the electrical parameters. The application not only provides new suggestions and references for improving the reliability of the power device 40, but also provides strong experimental support for high-power microwave protection of unmanned aerial vehicle power modules and electric drive modules and other products, and has a wide application prospect.

[0072] In one embodiment, as shown in Figure 2 The transient extreme stress loading device 20 includes a gate drive circuit 21, a transient extreme stress loading circuit 22 and a control circuit 23.

[0073] The gate drive circuit 21 is connected with the gate of the power device 40. The gate drive circuit 21 is used to provide a gate drive signal. For example, the gate drive circuit 21 can include a signal source and an auxiliary power supply, wherein the auxiliary power supply is connected with the signal source, the auxiliary power supply is used to provide a power supply voltage for the signal source, and the signal source is used to provide the gate drive signal under the action of the power supply voltage. The gate drive signal can include an enable level and a non-enable level; wherein the power device 40 can be turned on in response to the enable level, and the power device 40 can also be turned off in response to the non-enable level. For example, the gate drive signal can be a square wave signal. The specific type of the gate drive signal can be set according to the gate drive requirements of the power device 40, which is not limited here. In this way, the gate drive signal provided by the gate drive circuit 21 can effectively control the on-off state of the power device 40, for example, the switching frequency, duty cycle and other parameters of the power device 40 can be controlled to realize online evaluation of the degradation effect of the power device 40 and meet various test requirements.

[0074] The transient extreme stress loading circuit 22 is connected with the first pole and the second pole of the power device 40 respectively. The transient extreme stress loading circuit 22 is used to provide transient extreme stress. The transient extreme stress includes at least one of short-circuit current stress, avalanche stress and inrush current stress. The short-circuit current stress is that when the circuit is short-circuited, the current flowing through the power device 40 will increase sharply to far exceed the normal operating level. The avalanche stress refers to the self-sustaining discharge phenomenon of the power device 40 when the voltage applied to the power device 40 exceeds the rated breakdown voltage. The inrush current stress refers to a sudden and short current pulse.

[0075] Control circuit 23, connected to gate drive circuit 21 and transient extreme stress loading circuit 22 respectively, is used to control the operating states of gate drive circuit 21 and transient extreme stress loading circuit 22 to provide transient extreme stress to power device 40. Specifically, control circuit 23 can control the gate drive circuit 21 and transient extreme stress loading circuit 22 to be in an operating state to provide transient extreme stress to power device 40. Control circuit 23 can control the gate drive signal output by gate drive circuit 21 by controlling the operating state of gate drive circuit 21, thereby controlling parameters such as switching frequency and duty cycle of power device 40. Control circuit 23 can control the type of transient extreme stress provided to power device 40 by controlling the operating state of transient extreme stress loading circuit 22. For example, control circuit 23 can be an FPGA (Field Programmable Gate Array) controller.

[0076] In the above embodiments, the transient extreme stress loading device 20 provides a gate drive signal through the gate drive circuit 21, and provides transient extreme stress to the power device 40 through the transient extreme stress loading circuit 22 when the gate drive signal drives the power device 40. The operating states of the gate drive circuit 21 and the transient extreme stress loading circuit 22 are controlled by the control circuit 23 respectively. In this way, it is possible to provide technical support for providing composite stress, namely high-power microwave irradiation stress and transient extreme stress, to the power device 40, thereby providing the possibility for studying the electrical parameter degradation characteristics of the power device 40 under composite conditions.

[0077] In one embodiment, such as Figure 3 As shown, the semiconductor parameter analyzer 30 may include at least one of a dynamic parameter testing device 31 and a static parameter testing device 32. The dynamic parameter testing device 31 can be used to test the dynamic parameters of the power device 40, such as the turn-off time and on-resistance. The dynamic parameter testing device 31 may include an oscilloscope 33, which can test the voltage and current of the power device 40 online in real time. The static parameter testing device 32 can be used to test the static parameters of the power device 40, such as its transfer characteristics, output characteristics, and leakage characteristics.

[0078] In one embodiment, such as Figure 4 As shown, the transient extreme stress loading circuit 22 includes a short-circuit current stress loading module 221. The short-circuit current stress loading module 221 is used to provide short-circuit current stress to the power device 40.

[0079] The short-circuit current stress loading module 221 comprises a first capacitor C1, a first resistor R1 and a first direct current power supply U1. The first end of the first capacitor C1 is connected with the first end of the first resistor R1 and the second pole of the power device 40 respectively, the second end of the first capacitor C1 is connected with the first pole of the power device 40, and the second end of the first capacitor C1 is grounded. The second end of the first resistor R1 is grounded through the first direct current power supply U1, and the control end of the first direct current power supply U1 is connected with the control circuit 23. Taking the power device 40 as a gallium nitride device for example, the first pole of the power device 40 can be a source pole, and the second pole of the power device 40 can be a drain pole.

[0080] The first direct current power supply U1 can be a high-voltage direct current power supply, and the first direct current power supply U1 is used to provide a direct current voltage. The specific value of the direct current voltage can be set according to the test requirements of the short-circuit current stress applied to the power device 40, and is not limited here.

[0081] The gate drive circuit 21 comprises a first gate drive module 211, which is used to provide a first gate drive signal to the gate of the power device 40. The first gate drive module 211 can comprise a signal generator 2111, a first gate driver 2112 and a first protection resistor Rg1. The first end of the signal generator 2111 is connected with the first input end of the first gate driver 2112 through the first protection resistor Rg1, and the second end of the signal generator 2111 is connected with the second input end of the first gate driver 2112 and grounded.

[0082] The signal generator 2111 is used to generate an initial drive signal. The initial drive signal can be a square wave signal, for example, the high level of the initial drive signal is 3.3V, and the low level of the initial drive signal is 0V. In the application, the initial drive signal can be set according to the short-circuit current stress test requirements of the power device 40, which is exemplarily described here, and can also be any other appropriate signal, which is not limited here.

[0083] The output end of the first gate driver 2112 is connected with the gate of the power device 40. The first gate driver 2112 is used to generate a first gate drive signal according to the first initial drive signal to drive the power device 40. The first gate drive signal can be a square wave signal, for example, the high level of the first gate drive signal is 8V, and the low level of the first gate drive signal is -5V, so as to ensure that the power device 40 is completely turned on and completely turned off, and the accuracy of the test is improved. In the application, the first gate drive signal can be set according to the short-circuit current stress test requirements of the power device 40, which is exemplarily described here, and can also be any other appropriate signal, which is not limited here.

[0084] For example, the semiconductor parameter analyzer 30 can include an oscilloscope 33, which can be connected to the gate, the first pole and the second pole of the power device 40 respectively, and can be used to measure the voltage and current of the power device 40; for example, taking the power device 40 as a gallium nitride device, the first pole of the power device 40 can be the source, and the second pole of the power device 40 can be the drain.

[0085] The short-circuit current stress loading module 221 can provide technical support for the power device 40 to provide short-circuit current stress through the first capacitor C1, the first resistor R1 and the first DC power supply U1 in combination with the first gate driving module 211, wherein the first DC power supply U1 can provide a DC power supply voltage, the first capacitor C1 plays a role of voltage stabilization and can stabilize the voltage between the first pole and the second pole of the power device 40, and the first resistor R1 plays a role of protection and can improve the stability and reliability of the circuit.

[0086] In one embodiment, as shown in Figure 5 The transient extreme stress loading circuit 22 includes an avalanche stress loading module 222 for providing avalanche stress to the power device 40.

[0087] The avalanche stress loading module 222 includes a second capacitor C2, a first inductor L1 and a second DC power supply U2. The first end of the second capacitor C2 is connected to the first end of the first inductor L1 and the first end of the second DC power supply U2 respectively, the second end of the second capacitor C2 is connected to the first pole of the power device 40 and the second end of the second DC power supply U2 respectively, the second end of the second capacitor C2 is grounded, the second end of the first inductor L1 is connected to the second pole of the power device 40, and the control end of the second DC power supply U2 is connected to the control circuit 23. For example, taking the power device 40 as a gallium nitride device, the first pole of the power device 40 can be the source, and the second pole of the power device 40 can be the drain.

[0088] The second DC power supply U2 can be a high-voltage DC power supply, and the second DC power supply U2 is used to provide a DC voltage. The specific value of the DC voltage can be set according to the test requirements of the power device 40 subjected to avalanche stress, and is not limited here. The first inductor L1 can be understood as a load inductor, which can be connected to the power device 40, the second capacitor C2 and the second DC power supply U2 through cold pressure terminals respectively. The second DC power supply U2 can be the same high-voltage DC power supply as the first DC power supply U1.

[0089] The gate drive circuit 21 includes a second gate drive module 212 configured to provide a second gate drive signal to the gate of the power device 40. The second gate drive module 212 can include a second gate driver 2121 and a second protection resistor Rg2, where a first end of the second gate driver 2121 is connected to the gate of the power device 40 through the second protection resistor Rg2, and a second end of the second gate driver 2121 is connected to the first pole of the power device 40 and grounded.

[0090] The second gate driver 2121 is configured to generate the second gate drive signal. In an example, the second gate drive signal can be a square wave signal, for example, the high level of the second gate drive signal is 5V, and the low level of the initial drive signal is 0V. In an application, the second gate drive signal can be set according to the avalanche stress test requirements of the power device 40. In this example, it is described that the second gate drive signal can also be any suitable signal, which is not limited.

[0091] In an example, the semiconductor parameter analyzer 30 includes a screw coil, which can be connected in series between the second pole of the power device 40 and the first inductor L1. The screw coil can be used to measure the current flowing through the second pole of the power device 40. For example, the power device 40 is a gallium nitride device, and the screw coil can be used to measure the drain current Id of the power device 40. In another example, the semiconductor parameter analyzer 30 includes an avalanche resistance tester 34, which can be connected to the power device 40. The avalanche resistance tester 34 can be used to measure the avalanche breakdown characteristics of the power device 40. In another example, the semiconductor parameter analyzer 30 can include an oscilloscope 33, which can be connected to the gate, the first pole and the second pole of the power device 40 respectively, and can be used to measure the voltage and current of the power device 40. For example, the power device 40 is a gallium nitride device, the first pole of the power device 40 is a source, and the second pole of the power device 40 is a drain. The oscilloscope 33 can be used to measure the drain-source voltage Vds.

[0092] The above-mentioned avalanche stress loading module 222, through the second capacitor C2, the first inductor L1 and the second DC power supply U2, in combination with the second gate drive module 212, can provide technical support for the avalanche stress of the power device 40, where the second DC power supply U2 can provide a DC power supply voltage, the second capacitor C2 plays a role of voltage stabilization, which can stabilize the voltage between the first pole and the second pole of the power device 40, and the first inductor L1 plays a role of protection, which can improve the stability and reliability of the circuit.

[0093] In one embodiment, as Figure 6As shown, the transient extreme stress loading circuit 22 includes a surge current stress loading module 223 for providing a surge current stress to the power device 40.

[0094] The surge current stress loading module 223 includes a rectifier bridge 2231, a switch tube 2232 and a second inductor L2. The first end of the rectifier bridge 2231 is connected with the first pole of the switch tube 2232, the second end of the rectifier bridge 2231 is connected with the second pole of the power device 40 and grounded, the control end of the rectifier bridge 2231 is connected with the control circuit 23, the second pole of the switch tube 2232 is connected with the first pole of the power device 40 through the second inductor L2, and the gate of the switch tube 2232 is connected with the gate drive circuit 21.

[0095] The rectifier bridge 2231 is used for providing a direct current signal. For example, the rectifier bridge 2231 includes an alternating current source AC, a first diode D1, a second diode D2, a third diode D3 and a fourth diode D4. The first end of the alternating current source AC is connected with the anode of the first diode D1 and the cathode of the second diode D2 respectively, and the second end of the alternating current source AC is connected with the anode of the third diode D3 and the cathode of the fourth diode D4 respectively. The cathode of the first diode D1 is connected with the cathode of the third diode D3 and the first pole of the switch tube 2232 respectively. The cathode of the second diode D2 is connected with the cathode of the fourth diode D4 and grounded.

[0096] For example, the surge current stress loading module 223 can further include a third inductor L3, a second resistor R2 and a third resistor R3. The first end of the rectifier bridge 2231 is connected with the first pole of the switch tube 2232 through the third inductor L3 and the second resistor R2 in series, and the second pole of the power device 40 is grounded through the third resistor R3. The third inductor L3 can be understood as a parasitic inductor, and the second resistor R2 can be used for adjusting the surge current. The third resistor R3 can be understood as a sampling resistor, and can be used for detecting the current flowing through the power device 40, such as the drain current Id.

[0097] For example, the gate drive circuit 21 includes a third gate drive module 213 configured to provide a third gate drive signal to the gate of the power device 40 and a fourth gate drive signal to the switch tube 2232. The third gate drive module 213 can include a third gate driver 2131, a third protection resistor Rg3, and a fourth gate driver 2132, wherein the second gate driver 2121 is connected to the gate of the power device 40 through the third protection resistor Rg3, and the second gate driver 2121 is configured to generate the third gate drive signal according to the received first control signal. The fourth gate driver 2132 is connected to the gate of the switch tube 2232, and the fourth gate driver 2132 is configured to generate the fourth gate drive signal according to the received second control signal. The third gate drive signal is configured to control the on-off state of the power device 40, and the fourth gate drive signal is configured to control the on-off state of the switch tube 2232. In applications, the third gate drive signal and the fourth gate drive signal can be set according to the surge current stress test requirements of the power device 40, which will not be limited here.

[0098] The above-mentioned surge current stress loading module 223, through the rectifier bridge 2231, the switch tube 2232 and the second inductor L2, in combination with the third gate drive module 213, can provide technical support for the surge current stress of the power device 40, wherein the rectifier bridge 2231 can provide a direct current signal, i.e. a direct current power supply voltage, the switch tube 2232 can control the on-off state of the path between the rectifier bridge 2231 and the power device 40 to accurately and effectively control the application of the surge current stress to the power device 40, and the second inductor L2 can improve the stability and reliability of the circuit.

[0099] Please continue to refer to Figure 2 In one embodiment, the transient extreme stress loading circuit 22 includes a gating module 224, a short-circuit current stress loading module 221, an avalanche stress loading module 222, and a surge current stress loading module 223. The first end of the gating module 224 is connected to the second pole of the power device 40, and the three second ends of the gating module 224 are respectively grounded through the short-circuit current stress loading module 221, the avalanche stress loading module 222, and the surge current stress loading module 223. The control end of the gating module 224 is connected to the control circuit 23, and the gating module 224 is configured to select the path between the short-circuit current stress loading module 221, the avalanche stress loading module 222, and the surge current stress loading module 223 and the power device 40 under the control of the control circuit 23. For example, the gating module 224 can be a single-pole three-throw switch. In this way, by controlling the on-off state of the gating module 224, the type of transient extreme stress applied to the power device 40 can be switched, and the flexibility and operability of the system are improved.

[0100] In one embodiment, as shown in Figure 2 and Figure 7 The high-power microwave irradiation device 10 includes a resonant cavity 11, a high-power microwave radiation source 12, and an excitation probe 13. The high-power microwave radiation source 12 is configured to provide a high-power microwave signal. The power and frequency of the high-power microwave signal can be set according to the test requirements.

[0101] The resonant cavity 11 refers to a structure capable of storing electromagnetic wave energy at a specific frequency. The design of the resonant cavity 11 can determine its resonant frequency by precisely controlling its size and shape. For example, the resonant cavity 11 is a cavity surrounded by irregular surfaces, for example, a cavity formed by removing a wedge-shaped structure from one side of a cuboid. For example, the frequency of the high-power microwave signal is 2.45 GHz. In other examples, the frequency of the high-power microwave signal can also be other values, for example, 2.35 GHz, 2.4 GHz, 2.5 GHz, 2.55 GHz, etc., which are not limited here. The power device 40 is arranged in the resonant cavity 11. The position of the power device 40 can be set according to the position of the high-power microwave irradiation stress generated by the resonant cavity 11, which is not limited here.

[0102] The excitation probe 13 is arranged in the resonant cavity 11. The excitation probe 13 and the power device 40 are arranged in the resonant cavity 11. The excitation probe 13 is connected to the high-power microwave radiation source 12. The excitation probe 13 is configured to generate resonance in the resonant cavity 11 according to the high-power microwave signal, and provide high-power microwave irradiation stress to the power device 40. In applications, the high-power microwave signal generated by the high-power microwave radiation source 12 is transmitted to the excitation probe 13, and an electromagnetic field is generated in the resonant cavity 11 through resonance, which is used to simulate high-power microwave irradiation stress.

[0103] The power device degradation effect online evaluation system provided by the above embodiment includes a resonant cavity 11, a high-power microwave radiation source 12, and an excitation probe 13. The power device 40 and the excitation probe 13 are arranged in the resonant cavity 11, respectively. The high-power microwave radiation source 12 provides a high-power microwave signal. The excitation probe 13 generates resonance in the resonant cavity 11 according to the high-power microwave signal, and provides high-power microwave irradiation stress to the power device 40. In this way, through the combination of the resonant cavity 11, the high-power microwave radiation source 12, and the excitation probe 13, the high-power microwave irradiation stress can be accurately controlled, including but not limited to irradiation power, irradiation time, etc. The stability and repeatability of the test conditions are ensured, which provides a test and evaluation platform for the degradation effect online evaluation of the power device 40 in different application scenarios, and provides technical support and data support for in-depth research on the performance evolution of the power device 40 in complex electromagnetic environments, thereby improving the reliability of the system.

[0104] As shown in FIG. 1, in one embodiment, the high-power microwave irradiation source 12 includes a microwave signal source 121, a power amplifier 122, a circulator 123, and a directional coupler 124. Figure 7

[0105] The microwave signal source 121 is configured to provide a microwave signal. In an example, the microwave signal source 121 can be configured to provide a microwave signal with adjustable power and / or adjustable frequency. In an application, the microwave signal source 121 can be controlled to generate a microwave signal with different power levels and / or different frequencies for different types of power devices 40 and different high-power microwave irradiation test requirements. In this way, the system can be precisely controlled for different types of power devices 40 and their test conditions, improving the controllability and flexibility of the system.

[0106] The power amplifier 122 is connected to the microwave signal source 121. The input end of the power amplifier 122 is connected to the microwave signal source 121. The power amplifier 122 is configured to amplify the power of the microwave signal from the microwave signal source 121 and output a high-power microwave signal. The power amplifier 122 is designed to amplify the power of the microwave signal to achieve the required high-power level for testing. In this way, the power requirement of the microwave signal is reduced, i.e., even if the power of the microwave signal is low, a high-power microwave irradiation test environment can still be provided, which not only improves the flexibility of the system but also ensures the efficient use of energy during testing.

[0107] The circulator 123 is connected to the power amplifier 122 and the directional coupler 124. The input end of the circulator 123 is connected to the output end of the power amplifier 122, and the output end of the circulator 123 is connected to the input end of the directional coupler 124. The circulator 123 is configured to transmit the high-power microwave signal from the power amplifier 122 to the directional coupler 124. The circulator 123 can transmit the high-power microwave signal from the power amplifier 122 to the directional coupler 124 in one direction while providing necessary isolation protection to prevent reverse signals from damaging sensitive components (such as the microwave signal source 121). In this way, unnecessary interference and loss can be effectively avoided, ensuring the optimal performance of the signal transmission path.

[0108] The directional coupler 124 is connected to the excitation probe 13. The DC output end of the directional coupler 124 is connected to the excitation probe 13. The directional coupler 124 is configured to transmit the high-power microwave signal from the circulator 123 to the excitation probe 13. The directional coupler 124 helps to monitor and adjust the testing process in real time, providing stable and controllable irradiation stress for the power device 40, thereby improving the reliability and stability of the test results.

[0109] ​The power device degradation effect online evaluation system provided by the above embodiment, the high-power microwave radiation source 12 includes a microwave signal source 121, a power amplifier 122, a circulator 123 and a directional coupler 124, the system provides a microwave signal through the microwave signal source 121, and the microwave signal from the microwave signal source 121 is power amplified through the power amplifier 122, and a high-power microwave signal is output, and the high-power microwave signal from the power amplifier 122 is transmitted to the directional coupler 124 through the circulator 123, and the high-power microwave signal from the circulator 123 is transmitted to the excitation probe 13 through the directional coupler 124, so that a high-power microwave signal can be provided to provide high-power microwave irradiation stress to the power device 40, so that efficient and accurate testing of the power device 40 under high-power microwave irradiation conditions is realized, and the technical level of the whole test platform is also improved, which provides strong support for evaluating and improving the long-term reliability of the power device 40.

[0110] Please continue to refer to Figure 7 In one embodiment, the power device degradation effect online evaluation system further includes a power meter 50. The directional coupler 124 includes a first directional coupler 1241 and a second directional coupler 1242.

[0111] The input end of the first directional coupler 1241 is connected with the circulator 123. The input end of the first directional coupler 1241 can receive the high-power microwave signal from the circulator 123. The through output end of the first directional coupler 1241 is connected with the input end of the second directional coupler 1242. The through output end of the first directional coupler 1241 can transmit the high-power microwave signal from the circulator 123 to the second directional coupler 1242. The coupling output end of the first directional coupler 1241 is connected with the first end CH1 of the power meter 50. The first directional coupler 1241 can couple the high-power microwave signal from the circulator 123 and output the first power through the coupling output end.

[0112] The input end of the second directional coupler 1242 can receive the high-power microwave signal from the first directional coupler 1241. The DC output end of the second directional coupler 1242 is connected with the excitation probe 13. The through output end of the second directional coupler 1242 can transmit the high-power microwave signal from the first directional coupler 1241 to the excitation probe 13. The coupling output end of the second directional coupler 1242 is connected with the second end CH2 of the power meter 50. The second directional coupler 1242 can couple the high-power microwave signal from the first directional coupler 1241 and output the second power through the coupling output end.

[0113] The power meter 50 is used to detect the first power output of the first directional coupler 1241 and the second power output of the second directional coupler 1242. The first power output of the first directional coupler 1241 can be understood as the input power, and the second power output of the second directional coupler 1242 can be understood as the reflected power.

[0114] In applications, the power difference between the first power and the second power can be calculated, and the determination of whether the high-power microwave irradiation device 10 provides stable high-power microwave irradiation stress can be based on this power difference. For example, if the absolute value of the power difference between the first power and the second power is greater than or equal to 20 dBm, it is determined that the high-power microwave irradiation device 10 provides stable high-power microwave irradiation stress. Thus, the input power and reflected power of the high-power microwave signal source 121 can be detected in real time by the power meter 50, enabling real-time detection of high-power microwave irradiation stress and ensuring that stable high-power microwave irradiation stress is provided to the power device 40.

[0115] like Figure 8 As shown, in one embodiment, the online evaluation system for power device degradation effects further includes a device fixture 60. The device fixture 60 includes a fixture body 61 and signal terminals 62. The fixture body 61 is used to support the power device 40. The power device 40 can be disposed on one side of the fixture body 61. Thus, the power device 40 can be placed within the high-power microwave irradiation device 10 via the fixture body 61 of the device fixture 60, thereby applying high-power microwave irradiation stress to the power device 40.

[0116] Signal terminal 62 is located on the side of the fixture body 61 away from the power device 40. Signal terminal 62 is disposed outside the high-power microwave irradiation device 10. Signal terminal 62 is used to connect to the power device 40, the transient extreme stress loading device 20, and the semiconductor parameter analyzer 30, respectively. Thus, the signal terminal 62 of the device fixture 60 enables the connection between the power device 40 and the transient extreme stress loading device 20 and the semiconductor parameter analyzer 30, respectively, reducing the difficulty of connecting devices and providing technical support for testing the degradation characteristics of the power device 40 under combined stress, namely high-power microwave irradiation stress and transient extreme stress.

[0117] Exemplarily, the signal terminals 62 include at least three signal terminals 62. For example, the device clamp 60 includes three signal terminals 62, which are a gate signal terminal G, a source signal terminal S and a drain signal terminal D respectively; taking the power device 40 as a gallium nitride device for example, the gate signal terminal S is connected with the gate of the gallium nitride device, the source signal terminal S is connected with the source of the gallium nitride device, and the drain signal terminal D is connected with the drain of the gallium nitride device; and the three signal terminals 62 are connected with the transient extreme stress loading device 20 and the semiconductor parameter analyzer 30 respectively. For another example, the number of the signal terminals 62 can also be four or more than four, which can be set according to the test requirements and is not limited here.

[0118] The clamp body 61 is arranged in the high-power microwave irradiation device 10 on the side close to the power device 40. The clamp body 61 is arranged outside the high-power microwave irradiation device 10 on the side close to the signal terminals 62. Exemplarily, the clamp body 61 includes a first clamp body 611 and a second clamp body 612 located on one side of the first clamp body 611, wherein the side of the second clamp body 612 away from the first clamp body 611 is used to carry the power device 40, and the second clamp body 612 can be arranged in the high-power microwave irradiation device 10; the side of the first clamp body 611 away from the second clamp body 612 is provided with the signal terminals 62, and the second clamp body 612 can be arranged outside the high-power microwave irradiation device 10. Exemplarily, the second clamp body 612 covers the first clamp body 611 in the projection direction from the first clamp body 611 to the power device 40. In this way, by arranging the first clamp body 611 and the second clamp body 612, the signal terminals 62 can be arranged outside the high-power microwave irradiation device 10 through the first clamp body 611, and the power device 40 can be arranged in the high-power microwave irradiation device 10 through the second clamp body 612, thereby providing support for the test and improving the reliability of the system.

[0119] Based on the same application concept, the embodiment of the present application provides a power device degradation effect online evaluation method. The method can be applied to the power device degradation effect online evaluation system provided in any of the preceding embodiments. The implementation scheme for solving the problem provided by the method is similar to the implementation scheme described in the system, so the specific limitations in one or more power device degradation effect online evaluation method embodiments provided below can refer to the limitations of the power device degradation effect online evaluation system described above, which will not be repeated here.

[0120] In combination with Figures 1 to 8 As shown in Figure 9 , a power device degradation effect online evaluation method is provided, which includes the following steps S902 to S908.

[0121] S902: Obtain initial electrical parameters of the power device.

[0122] In the application, the semiconductor parameter analyzer 30 can be connected with the power device 40, and the initial electrical parameters of the power device 40 can be obtained by the semiconductor parameter analyzer 30 before the high-power microwave irradiation stress is applied to the power device 40 and the power device 40 is in an off state. The specific description of the semiconductor parameter analyzer 30 and the initial electrical parameters can be referred to the related content in the foregoing, and will not be repeated here.

[0123] S904: Apply high-power microwave irradiation stress and transient extreme stress to the power device.

[0124] In the application, the high-power microwave irradiation device 10 can be used to apply high-power microwave irradiation stress to the power device 40, and the transient extreme stress loading device 20 can be used to apply transient extreme stress to the power device 40. The specific description of the high-power microwave irradiation device 10 and the transient extreme stress loading device 20 can be referred to the related content in the foregoing, and will not be repeated here.

[0125] S906: Obtain test electrical parameters of the power device subjected to high-power microwave irradiation stress and transient extreme stress.

[0126] In the application, the semiconductor parameter analyzer 30 can be used to obtain the test electrical parameters of the power device 40 subjected to high-power microwave irradiation stress and transient extreme stress.

[0127] S908: Obtain online evaluation results of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters.

[0128] In the application, the semiconductor parameter analyzer 30 can be used to determine the online evaluation results of the degradation effect of the power device 40 according to the initial electrical parameters and the test electrical parameters.

[0129] The above-mentioned online evaluation method of the degradation effect of the power device obtains the initial electrical parameters of the power device 40, applies high-power microwave irradiation stress and transient extreme stress to the power device 40, obtains the test electrical parameters of the power device 40 subjected to high-power microwave irradiation stress and transient extreme stress, and determines the online evaluation results of the degradation effect of the power device 40 according to the initial electrical parameters and the test electrical parameters. The method realizes the degradation test of the power device 40 subjected to high-power microwave irradiation stress and transient extreme stress, can accurately evaluate the electrical parameter degradation characteristics of the power device 40 under the transient extreme working condition subjected to high-power microwave irradiation stress, thereby providing strong technical support and data support for the reliability research and protection design of the power device 40 in the high-power microwave irradiation environment, and has a wide application prospect.

[0130] In one embodiment, in step S908, the online evaluation result of the degradation effect of the power device is obtained according to the initial electrical parameters and the test electrical parameters, including: determining whether the power device is failed according to the initial electrical parameters and the test electrical parameters; in the case that the power device is not failed, adjusting the high-power microwave irradiation stress and / or the transient extreme stress, and performing again the step of obtaining the test electrical parameters of the power device subjected to the high-power microwave irradiation stress and the transient extreme stress; in the case that the power device is failed, obtaining the online evaluation result of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters, the online evaluation result being used to characterize the failure condition of the power device.

[0131] It can be understood that, when the power device 40 is subjected to the high-power microwave stress and the transient extreme stress, the power device 40 is more likely to degrade or even fail. In this regard, in the application, it can be determined whether the power device 40 is failed according to the initial electrical parameters and the test electrical parameters. If the power device 40 is not failed, it indicates that the power device 40 can continue to be used as a device under test, in which case, the online evaluation result of the degradation effect of the power device 40 can be obtained according to the initial electrical parameters and the test electrical parameters, the online evaluation result being used to represent the degradation condition or the degradation degree of the power device 40; and the high-power stress can be adjusted, and / or the transient extreme stress can be adjusted, and the test electrical parameters of the power device 40 subjected to the adjusted high-power microwave stress and the transient extreme stress can be obtained, and a new online evaluation result of the degradation effect can be obtained according to the initial electrical parameters and the test electrical parameters, thereby providing more test data for the degradation characteristics of the power device 40. If the power device 40 is failed, it indicates that the power device 40 has been damaged, in which case, the power device 40 cannot continue to be used as a device under test for testing. In this regard, the failure analysis can be performed according to the initial electrical parameters and the test electrical parameters, and the online evaluation result can be obtained, the online evaluation result being used to characterize the failure condition of the power device 40.

[0132] The power device degradation effect online evaluation method provided in the above embodiment can obtain the test condition parameters of the power device 40, and apply high-power microwave irradiation stress and transient extreme stress to the power device 40 according to the test condition parameters. In this way, the test parameters such as irradiation power, irradiation time and transient extreme stress type can be accurately controlled according to the test requirements, the electrical parameter degradation characteristics of the power device 40 under different transient extreme working conditions and subjected to high-power microwave irradiation stress can be accurately tested and evaluated, and thus various test requirements can be met and sufficient data support can be provided.

[0133] In one embodiment, the step S904 of applying high-power microwave irradiation stress and transient extreme stress to the power device includes: obtaining test condition parameters of the power device, and applying high-power microwave irradiation stress and transient extreme stress to the power device according to the test condition parameters. The test condition parameters include high-power microwave irradiation condition parameters and transient extreme stress condition parameters. The high-power microwave irradiation condition parameters are used to represent related parameters of the high-power microwave irradiation stress applied to the power device. For example, the high-power microwave irradiation condition parameters can include irradiation power and irradiation time, where the irradiation power refers to the power of the high-power microwave irradiation stress, and the irradiation time refers to the duration of the high-power microwave irradiation stress applied to the power device. The transient extreme stress condition parameters are used to represent related parameters of the transient extreme stress applied to the power device. For example, the transient extreme stress condition parameters can include transient extreme stress type, switching frequency, duty cycle, etc.

[0134] The power device degradation effect online evaluation method provided in the above embodiment can obtain the test condition parameters of the power device 40, and apply high-power microwave irradiation stress and transient extreme stress to the power device 40 according to the test condition parameters. In this way, the test parameters such as irradiation power, irradiation time and transient extreme stress type can be accurately controlled according to the test requirements, the electrical parameter degradation characteristics of the power device 40 under different transient extreme working conditions and subjected to high-power microwave irradiation stress can be accurately tested and evaluated, and thus various test requirements can be met and sufficient data support can be provided.

[0135] Please continue to refer to Figures 1 to 8 In one embodiment, a power device degradation effect online evaluation method is provided, and the method is applied to a power device degradation effect online evaluation system.

[0136] The system comprises a high-power microwave irradiation device 10, a semiconductor parameter analyzer 30, a high-voltage direct-current power supply, an auxiliary power supply, an FPGA microcontroller, a transient extreme stress loading device 20, a control signal cable, a power supply cable, a test cable, a device clamp 60, a test seat and a power meter 50.

[0137] The high-power microwave irradiation device 10 applies high-power microwave irradiation stress on the power device 40 through the device clamp 60, the power device 40 is connected in the transient extreme stress loading device 20 through the test seat, the semiconductor parameter analyzer 30 is connected with the power device 40 through the test cable, the high-voltage direct-current power supply and the auxiliary power supply are connected with the transient extreme stress loading device 20 through the power supply cable, and the FPGA microcontroller is connected with the transient extreme stress loading device 20 through the control signal cable.

[0138] The high-power microwave irradiation device 10 comprises a microwave signal generator 2111, a solid-state power amplifier 122, a directional coupler 124, a circulator 123, a resonant cavity 11, an excitation probe 13 and a coaxial cable. Among them, the resonant cavity 11 applies high-power microwave irradiation stress on the power device 40 through the device clamp 60, the microwave signal generator 2111, the solid-state power amplifier 122, the directional coupler 124 and the circulator 123 are connected together through the coaxial cable, and the function is to amplify the microwave signal and inject it into the excitation probe 13, and finally generate high-power microwave irradiation stress in the resonant cavity 11. And connect the directional coupler 124 with the power meter 50. For specific structure and introduction, please refer to Figure 2 and Figure 7 and the related content in the foregoing, which will not be repeated here.

[0139] The transient extreme stress loading device 20 comprises a gate drive circuit 21, a control circuit 23 and a transient extreme stress loading circuit 22. For specific structure, please refer to Figures 1 to 6 and the related content in the foregoing, which will not be repeated here.

[0140] As shown in Figure 10 , the power device degradation effect online evaluation method comprises the following steps S1002 to S1022.

[0141] S1002: Obtain the test condition parameters of the power device, set the power and frequency of the microwave signal source, and connect the microwave signal source, the solid-state power amplifier, the directional coupler, the circulator, the resonant cavity and the excitation probe through the coaxial cable. Among them, the frequency of the microwave signal source 121 can be set to 2.45GHz.

[0142] S1004: Set the FPGA controller according to the test condition parameters to set the switching frequency, duty cycle of the power device, and the target working state, and connect the FPGA controller to the corresponding signal port of the transient extreme stress loading device through the control cable, and connect the auxiliary power supply and the high-voltage DC power supply to the corresponding circuits, respectively.

[0143] In application, the switching frequency, duty cycle of the power device 40, and the transient extreme stress mode and condition can be set by writing a corresponding computer program such as a Verilog HDL program, and downloading it to the FPGA controller, so as to realize the setting of the transient extreme stress.

[0144] S1006: Set the semiconductor parameter analyzer according to the test condition parameters.

[0145] In application, the required test curve can be programmed on the semiconductor parameter analyzer 30.

[0146] S1008: Place the power device in the radiation cavity through the device clamp.

[0147] S1010: Connect the pins of the power device to the transient extreme stress loading device and the semiconductor parameter analyzer through the signal terminals on the device clamp, respectively.

[0148] S1012: Turn on the semiconductor parameter analyzer to test the initial parameters of the power device, and obtain the initial electrical parameters of the power device.

[0149] S1014: Turn on the microwave signal source output button to apply high-power microwave irradiation stress to the power device.

[0150] S1016: Turn on the auxiliary power supply, and after the gate drive circuit works normally, turn on the high-voltage DC power supply, and after the power supply is stable, apply the transient extreme stress to the power device through the FPGA control signal. The transient extreme stress can include short-circuit current stress, avalanche stress, or inrush current stress.

[0151] S1018: After the power device works for a preset irradiation time, turn off the microwave signal source to stop applying high-power microwave irradiation stress, and turn off the high-voltage source and the auxiliary power supply, and the power device stops working.

[0152] S1020: Turn on the semiconductor parameter analyzer to test the parameters and obtain the test electrical parameters of the power device.

[0153] S1022: After the parameter test is completed, export the experimental data. The experimental data includes the online evaluation results of the degradation effect of the power device.

[0154] As Figure 11As shown, in the application, the initial electrical parameters of the power device 40 can be obtained by the semiconductor parameter analyzer 30 first, then the test condition parameters of the power device 40 are obtained, and the high-power microwave condition is set according to the test condition parameters, and the steady-state bias of the device is adjusted, and the transient extreme stress mode is selected, and the transient extreme stress condition is set, so that the power device 40 is subjected to a composite stress, that is, a high-power microwave radiation stress and a transient extreme stress, then the test electrical parameters after the composite stress is applied during the power are obtained, and whether the power device 40 fails is judged according to the initial electrical parameters and the test electrical parameters, if yes, the device failure analysis characterization is performed; if no, the degradation analysis is performed and the test data are obtained, and the high-power microwave radiation condition and / or the transient extreme stress condition are adjusted, and the power device 40 is subjected to the adjusted composite stress again to obtain more test data.

[0155] The above-mentioned power device degradation effect online evaluation system and method organically combine the high-power microwave radiation device, the transient extreme stress loading device 20 and the semiconductor parameter analyzer 30, and realize accurate evaluation of the degradation effect of the power device 40 under complex working conditions. By combining the high-power microwave with the transient extreme stress, the system can be closer to the actual working conditions, and based on the change of the electrical parameters, the degradation behavior and mechanism of the power device 40 under the above-mentioned working conditions can be comprehensively analyzed and evaluated. Moreover, the power and time of the high-power microwave radiation can be accurately controlled, and various transient extreme stress tests can be realized, including short circuit, avalanche, surge, etc. On this basis, the electrical parameters of the device are tested and characterized by the semiconductor parameter analyzer 30, so as to realize the evaluation of the degradation effect of the device, and the high-power microwave radiation can be applied in real time under the condition that the device experiences the transient stress, and no additional influence is caused to the test circuit. In addition, the system is suitable for various power devices 40, including silicon, silicon carbide, gallium nitride, etc., and can provide reliability verification and performance improvement support for the devices widely used at present, not only provides new suggestions and references for improving the reliability of the power device 40, but also provides strong experimental support for the high-power microwave protection of the power module and the electric drive module of the unmanned aerial vehicle, and has good application potential and broad market prospect.

[0156] In the description of the present specification, the description referring to the terms "some embodiments", "other embodiments", and the like means that the specific features, structures, materials or characteristics described in connection with the embodiments or examples are contained in at least one embodiment or example of the present application. In the present specification, the illustrative description of the above-mentioned terms does not necessarily refer to the same embodiment or example.

[0157] Any combination of the technical features in the above-described embodiments can be made, and for the sake of brevity, not all possible combinations are described, however, it is to be understood that the application encompasses all such possible combinations.

[0158] The above-described embodiments only express several implementation manners of the present application, and the description is relatively specific and detailed, but it should not be understood as a limitation on the scope of the present application. It should be pointed out that, for ordinary skilled persons in the art, several modifications and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. An online system for evaluating degradation effects in power devices, characterized by, The application relates to a high-power microwave irradiation device, a transient extreme stress loading device and a semiconductor parameter analyzer. The power device is connected with the transient extreme stress loading device and the semiconductor parameter analyzer respectively; wherein, The high-power microwave irradiation device comprises a resonant cavity, the power device is arranged in the resonant cavity, a high-power microwave radiation source for providing a high-power microwave signal, and an excitation probe arranged in the resonant cavity and connected with the high-power microwave radiation source, for generating resonance in the resonant cavity according to the high-power microwave signal and providing high-power microwave irradiation stress to the power device. The transient extreme stress loading device comprises a gate drive circuit connected with the gate of the power device for providing a gate drive signal, a transient extreme stress loading circuit connected with the first pole and the second pole of the power device respectively for providing the transient extreme stress, the transient extreme stress comprising at least one of short-circuit current stress, avalanche stress and surge current stress, and a control circuit connected with the gate drive circuit and the transient extreme stress loading circuit respectively for controlling the working state of the gate drive circuit and the transient extreme stress loading circuit to provide the transient extreme stress to the power device. The semiconductor parameter analyzer is used for acquiring initial electrical parameters of the power device, acquiring test electrical parameters of the power device subjected to the high-power microwave irradiation stress and the transient extreme stress, and determining online evaluation results of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters. The transient extreme stress loading circuit comprises a short-circuit current stress loading module for providing the short-circuit current stress to the power device; wherein, 2. The system of claim 1, wherein, The short-circuit current stress loading module comprises a first capacitor, a first resistor and a first direct-current power supply, the first end of the first capacitor is connected with the first end of the first resistor and the second pole of the power device respectively, the second end of the first capacitor is connected with the first pole of the power device, the second end of the first capacitor is grounded, the second end of the first resistor is grounded through the first direct-current power supply, and the control end of the first direct-current power supply is connected with the control circuit. The transient extreme stress loading circuit comprises an avalanche stress loading module for providing the avalanche stress to the power device; wherein, 3. The system of claim 1, wherein, The avalanche stress loading module comprises a second capacitor, a first inductor and a second direct-current power supply; wherein, the first end of the second capacitor is connected with the first end of the first inductor and the first end of the second direct-current power supply respectively, the second end of the second capacitor is connected with the first pole of the power device and the second end of the second direct-current power supply respectively, the second end of the second capacitor is grounded, the second end of the first inductor is connected with the second pole of the power device, and the control end of the second direct-current power supply is connected with the control circuit. ​ 4. The system of claim 1, wherein, The transient extreme stress loading circuit comprises a surge current stress loading module configured to provide the surge current stress to the power device. The surge current stress loading module comprises a rectifier bridge, a switch tube and a second inductor, wherein a first end of the rectifier bridge is connected with a first pole of the switch tube, a second end of the rectifier bridge is connected with a second pole of the power device and grounded, a control end of the rectifier bridge is connected with the control circuit, a second pole of the switch tube is connected with a first pole of the power device through the second inductor, and a gate of the switch tube is connected with the gate drive circuit.

5. The system of claim 1, wherein, The high-power microwave radiation source comprises a microwave signal source, a power amplifier, a circulator and a directional coupler. The microwave signal source is configured to provide a microwave signal. The power amplifier is connected with the microwave signal source and configured to perform power amplification processing on the microwave signal and output a high-power microwave signal. The circulator is connected with the power amplifier and the directional coupler, and configured to transmit the high-power microwave signal from the power amplifier to the directional coupler. The directional coupler is connected with the excitation probe and configured to transmit the high-power microwave signal from the circulator to the excitation probe.

6. A method for online evaluation of degradation effects in power devices, characterized in that The method is applied to the power device degradation effect online evaluation system of any one of claims 1-5, and the method comprises: obtaining initial electrical parameters of the power device; applying high-power microwave irradiation stress and transient extreme stress to the power device; obtaining test electrical parameters of the power device under the high-power microwave irradiation stress and the transient extreme stress; obtaining online evaluation results of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters.

7. The method of claim 6, wherein, The online evaluation results of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters comprise: determining whether the power device fails according to the initial electrical parameters and the test electrical parameters; in the case where the power device does not fail, adjusting at least one of the high-power microwave irradiation stress and the transient extreme stress, and performing again the step of obtaining the test electrical parameters of the power device under the high-power microwave irradiation stress and the transient extreme stress; in the case where the power device fails, obtaining online evaluation results of the degradation effect of the power device according to the initial electrical parameters and the test electrical parameters, and the online evaluation results are used to characterize the failure condition of the power device.

8. The method of claim 6, wherein, The method of applying the high-power microwave irradiation stress and the transient extreme stress to the power device comprises: obtaining test condition parameters of the power device, wherein the test condition parameters comprise high-power microwave irradiation condition parameters and transient extreme stress condition parameters; applying the high-power microwave irradiation stress and the transient extreme stress to the power device according to the test condition parameters.

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